WO2023234568A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2023234568A1
WO2023234568A1 PCT/KR2023/005933 KR2023005933W WO2023234568A1 WO 2023234568 A1 WO2023234568 A1 WO 2023234568A1 KR 2023005933 W KR2023005933 W KR 2023005933W WO 2023234568 A1 WO2023234568 A1 WO 2023234568A1
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WO
WIPO (PCT)
Prior art keywords
packing
plasma
substrate processing
shield
processing device
Prior art date
Application number
PCT/KR2023/005933
Other languages
English (en)
Korean (ko)
Inventor
김범석
윤성진
서효정
박종우
Original Assignee
피에스케이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 피에스케이 주식회사 filed Critical 피에스케이 주식회사
Publication of WO2023234568A1 publication Critical patent/WO2023234568A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a sealing member.
  • O-ring as a sealing member to maintain the degree of vacuum inside the chamber.
  • a typical O-ring closes the gap formed between parts by being physically compressed.
  • the O-ring and the surrounding structure of the O-ring may expand due to high temperature heat. Accordingly, the fastening force of the sealing structure is weakened, and external gas may flow into the chamber, or process gas inside the chamber may leak out of the chamber.
  • the sealing structure by the O-ring may be damaged. If the sealing structure is damaged, particles due to the damage may flow into the chamber, causing process defects and weakening the fastening force of the sealing structure.
  • FIG. 1 is a diagram showing a portion of a plasma source unit and a chamber in a substrate processing apparatus using plasma.
  • Figure 2 is an enlarged view showing the connection between the plasma source unit and the chamber.
  • a gap may be formed between the bottom of the plasma source unit 1000 and the top of the chamber 2000.
  • An O-ring 3000 is installed between the plasma source unit 1000 and the chamber 2000 to seal the gap.
  • the O-ring 3000 is used to process the process through a fine gap formed between the plasma source unit 1000 and the chamber 2000. exposed to gases and/or heat.
  • the fastened O-ring 3000 is etched by process gas or thermal deformation is caused by heat. Accordingly, a process leak occurs due to the damaged O-ring 3000, and maintenance time and cost for replacing the damaged O-ring 3000 increase.
  • One object of the present invention is to provide a substrate processing device that can minimize damage to a sealing member for maintaining the degree of vacuum inside the device.
  • Another object of the present invention is to provide a substrate processing device that can efficiently maintain pressure inside the device.
  • Another object of the present invention is to provide a substrate processing device that can reduce maintenance costs and time by increasing the lifespan of a sealing member.
  • a housing providing a processing space therein;
  • a plasma generation unit that generates plasma from the process gas;
  • an induction unit located between the plasma generating unit and the housing and providing a passage through which the plasma is supplied to the processing space;
  • the sealing member includes packing; a packing flange supporting the packing; and a packing shield that blocks direct exposure of the packing to plasma leaking through a gap in the connection portion.
  • the packing shield may have a cross-sectional shape with a vertex where two sides meet, and the vertex may be provided to face the gap.
  • the packing shield may be formed to have a triangular cross-sectional shape, and one vertex may be provided to face the gap.
  • the opposite side of the packing shield facing the vertex may be concave.
  • the packing shield may be made of a material that is more resistant to plasma corrosion than the packing.
  • the packing flange may include a cooling line through which refrigerant flows to lower the temperature of the packing.
  • the packing shield may be provided in a ring shape.
  • the packing shield may have a cross-sectional shape corresponding to the surplus space generated when the packing is compressed within the seal groove of the packing flange.
  • a substrate processing apparatus including a first member and a sealing member that seals a gap between a second member in contact with the first member, the sealing member has a seal groove and the second member is in contact with the first member.
  • Packing flange fixed to member 2; Packing provided in the seal groove and compressed by the packing flange;
  • a substrate processing apparatus may be provided including a packing shield that blocks direct exposure of the packing to plasma flowing out through the gap.
  • the packing shield may have a cross-sectional shape corresponding to the surplus space generated when the packing is compressed within the seal groove of the packing flange.
  • the packing shield may have a cross-sectional shape with a vertex where two sides meet, and the vertex may be provided to face the gap.
  • the packing shield may be formed to have a triangular cross-sectional shape, and one vertex may be provided to face the gap.
  • the opposite side of the packing shield facing the vertex may be concave.
  • the packing shield has a convex side facing the vertex, and the side facing the packing shield can be in contact with the packing.
  • the packing shield may be made of a material that is more resistant to plasma corrosion than the packing.
  • the packing flange may include a cooling line through which refrigerant flows to lower the temperature of the packing.
  • the packing shield may be provided in a ring shape.
  • damage to the sealing member due to pressure changes inside the chamber can be minimized.
  • damage to the sealing member due to plasma inside the chamber can be minimized.
  • the pressure inside the device can be efficiently maintained.
  • the durability of the sealing member can be increased, thereby reducing the cost and time required for maintenance of the substrate processing apparatus.
  • FIG. 1 is a diagram showing a portion of a plasma source unit and a process chamber in a substrate processing apparatus using plasma.
  • Figure 2 is an enlarged view showing a connection portion between the plasma source unit and the process chamber.
  • FIG. 3 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a diagram schematically showing an embodiment of a process chamber that performs a plasma processing process among the process chambers of the substrate processing apparatus of FIG. 3 .
  • Figure 5 is a perspective view schematically showing the sealing member and the upper flange of Figure 4.
  • Figure 6 is an enlarged view showing the main part of the sealing member shown in Figure 5.
  • Figure 7 is a cutaway perspective view of the packing shield of Figure 5;
  • Figure 8 is a cross-sectional view of the packing shield of Figure 5.
  • Figure 9 is a diagram for explaining the mounting structure of the packing shield.
  • Figure 10 is a diagram showing the surplus space within the sealing member.
  • 11 to 16 are views showing various modifications of the packing shield.
  • FIG. 3 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus 1 has a front end module (Equipment Front End Module, EFEM) 20 and a processing module 30.
  • the front end module 20 and the processing module 30 are arranged in one direction.
  • the direction in which the front end module 20 and the processing module 30 are arranged is defined as the first direction 11.
  • the direction perpendicular to the first direction 11 is defined as the second direction 12
  • the direction perpendicular to both the first direction 11 and the second direction 12 is defined as the second direction 12. It is defined as 3 directions (13).
  • the front end module 20 has a load port (10) and a transfer frame (21).
  • the load port 10 is disposed in front of the front end module 20 in the first direction 11.
  • the load port 10 has a plurality of supports 6. Each support part 6 is arranged in a row in the second direction 12, and includes a carrier C (for example, a cassette, FOUP, etc.) is seated.
  • the carrier C accommodates the substrate W to be provided in the process and the substrate W on which the process has been completed.
  • the transfer frame 21 is disposed between the load port 10 and the processing module 30.
  • the transfer frame 21 is disposed therein and includes a first transfer robot 25 that transfers the substrate W between the load port 10 and the processing module 30.
  • the first transfer robot 25 moves along the transfer rail 27 provided in the second direction 12 to transfer the substrate W between the carrier C and the processing module 30.
  • the processing module 30 includes a load lock chamber 40, a transfer chamber 50, and a process chamber 60.
  • the load lock chamber 40 is disposed adjacent to the transfer frame 21. As an example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the front end module 20.
  • the load lock chamber 40 is a waiting space before the substrate (W) to be provided for the process is transferred to the process chamber 60, or before the substrate (W) whose processing has been completed is transferred to the front end module 20. to provide.
  • the transfer chamber 50 is disposed adjacent to the load lock chamber 40.
  • the transfer chamber 50 has a polygonal body when viewed from the top.
  • the transfer chamber 50 may have a pentagonal body when viewed from the top.
  • On the outside of the body a load lock chamber 40 and a plurality of process chambers 60 are arranged along the circumference of the body.
  • a passage (not shown) through which the substrate W enters and exits is formed on each side wall of the body, and the passage connects the transfer chamber 50 and the load lock chamber 40 or the process chamber 60.
  • Each passage is provided with a door (not shown) that opens and closes the passage and seals the interior.
  • a second transfer robot 53 is disposed in the inner space of the transfer chamber 50 to transfer the substrate W between the load lock chamber 40 and the process chamber 60.
  • the second transfer robot 53 transfers the unprocessed substrate (W) waiting in the load lock chamber 40 to the process chamber 60, or transfers the processed substrate (W) to the load lock chamber 40. do.
  • the substrate W is transferred between the process chambers 60 in order to sequentially provide the substrate W to the plurality of process chambers 60 .
  • a load lock chamber 40 is disposed on the side wall adjacent to the front end module 20, and a process chamber 60 is placed on the remaining side wall. They are placed sequentially.
  • the shape of the transfer chamber 50 is not limited to this, and may be provided in various forms depending on the required process module.
  • Process chamber 60 is disposed along the perimeter of transfer chamber 50. A plurality of process chambers 60 may be provided. In each process chamber 60, a process for the substrate W is performed. The process chamber 60 receives the substrate W from the second transfer robot 53, processes it, and provides the processed substrate W to the second transfer robot 53. Process processing performed in each process chamber 60 may be different from each other.
  • Process processing performed in each process chamber 60 may be different from each other.
  • the process performed by the process chamber 60 may be one of the processes of producing a semiconductor device or display panel using the substrate W.
  • the substrate W processed by the substrate processing device 1 is a comprehensive concept that includes all substrates used in the manufacture of semiconductor devices, flat panel displays (FPD), and other objects with circuit patterns formed on thin films. am. Examples of such a substrate W include a silicon wafer, a glass substrate, or an organic substrate.
  • FIG. 4 is a diagram schematically showing a process chamber in which a plasma processing process is performed among the process chambers of the substrate processing apparatus of FIG. 3 .
  • a process chamber 60 that performs a plasma treatment process according to an embodiment of the present invention will be described.
  • the process chamber 60 performs a predetermined process on the substrate W using plasma.
  • the thin film on the substrate W may be etched or ashed.
  • the thin film may be of various types, such as a polysilicon film, an oxide film, and a silicon nitride film.
  • the thin film may be a natural oxide film or a chemically created oxide film.
  • the process chamber 60 may include a process unit 100, an exhausting unit (200), a plasma supplying unit (300), an induction unit 340, and a sealing member 400.
  • the process unit 100 provides a space where the substrate W is placed and processing on the substrate W is performed.
  • the plasma generation unit 300 which will be described later, generates plasma by discharging process gas and supplies it to the internal space of the process unit 100.
  • Process gas remaining inside the process unit 100 and/or reaction by-products generated in the process of processing the substrate W are discharged to the outside of the process chamber 60 through the exhaust unit 200, which will be described later. Because of this, the pressure within the process unit 100 can be maintained at the set pressure.
  • Process unit 100 may include a housing 110, a support unit 120, a baffle 130, and an exhaust baffle 140.
  • a processing space 111 is provided to perform a substrate processing process.
  • the outer wall of the housing 110 may be provided as a conductor.
  • the outer wall of the housing 110 may be made of a metal material including aluminum.
  • the housing 110 may have an open top and an opening (not shown) may be formed in the side wall.
  • the substrate W enters and exits the interior of the housing 110 through the opening.
  • the opening (not shown) may be opened and closed by an opening and closing member such as a door (not shown).
  • an exhaust hole 112 may be formed on the bottom of the housing 110.
  • the exhaust hole 112 may be connected to components including the exhaust unit 200, which will be described later.
  • the support unit 120 may be located in the processing space 111 .
  • the support unit 120 supports the substrate W in the processing space 111 .
  • a substrate W requiring processing is placed on the upper surface of the support unit 120.
  • the support unit 120 may include a support plate 121 and a support shaft 122.
  • the support plate 121 may be provided in a generally disk shape when viewed from the top.
  • the support plate 121 is supported by the support shaft 122.
  • the support plate 121 may be connected to an external power source (not shown).
  • the support plate 121 may generate static electricity by power applied from an external power source.
  • the electrostatic force of the generated static electricity can fix the substrate W to the upper surface of the support plate 121.
  • the support plate 121 may support the substrate W using a physical method such as mechanical clamping or a vacuum adsorption method.
  • the support axis 122 can move the object.
  • the support shaft 122 may move the substrate W in the vertical direction.
  • the support shaft 122 may be coupled to the support plate 121 and raise and lower the support plate 121 to move the substrate W mounted on the upper surface of the support plate 121 up and down.
  • the baffle 130 is located on the upper part of the support plate 121.
  • the baffle 130 may be disposed between the support plate 121 and the plasma generation unit 300.
  • the baffle 130 may be made of aluminum whose surface is oxidized.
  • the baffle 130 may be electrically connected to the upper wall of the housing 110.
  • the baffle 130 may be provided in the shape of a generally thick disk.
  • the baffle 130 may be provided in a generally circular shape when viewed from the top.
  • the baffle 130 may be arranged to overlap the upper surface of the support unit 120 when viewed from the top.
  • a baffle hole 131 is formed in the baffle 130.
  • a plurality of baffle holes 131 may be provided.
  • the baffle holes 131 may be provided to be spaced apart from each other.
  • the baffle holes 131 may be formed at regular intervals on a concentric circumference to uniformly supply radicals.
  • the baffle holes 131 may penetrate from the top to the bottom of the baffle 130.
  • the baffle holes 131 may function as a passage through which plasma generated by the plasma generation unit 300 flows into the processing space 111.
  • the baffle 130 can uniformly transmit plasma generated in the plasma generation unit 300 to the processing space 111. Additionally, plasma diffused in the diffusion space 341, which will be described later, may pass through the baffle holes 131 and flow into the processing space 111. According to one example, charged particles such as electrons or ions may be trapped in the baffle 130, and neutral particles such as oxygen radicals may be supplied to the substrate W through the baffle holes 131. Additionally, the baffle 130 may be grounded to form a passage through which electrons or ions move.
  • the baffle 130 according to the above-described embodiment of the present invention has been described as an example of being provided in the shape of a disk with a thickness, but is not limited thereto.
  • the baffle 130 according to one embodiment has a circular shape when viewed from the top, but may have a shape where the height of its upper surface increases from the edge area to the center area when viewed in cross section.
  • its upper surface may have a shape that slopes upward from the edge area to the center area. Accordingly, the plasma generated from the plasma generation unit 300 may flow to the edge area of the processing space 111 along the inclined cross section of the baffle 130.
  • the exhaust baffle 140 uniformly exhausts plasma from the processing space 111 by region. Additionally, the exhaust baffle 140 can adjust the residence time of plasma flowing within the processing space 111.
  • the exhaust baffle 140 has an annular ring shape when viewed from the top.
  • the exhaust baffle 140 may be located between the support unit 120 and an inner wall of the housing 110 within the processing space 111 .
  • a plurality of exhaust holes 141 are formed in the exhaust baffle 140.
  • the exhaust holes 141 may be provided as holes extending from the top to the bottom of the exhaust baffle 140.
  • the exhaust holes 141 may be arranged to be spaced apart from each other along the circumferential direction of the exhaust baffle 140. Reaction by-products that have passed through the exhaust baffle 140 are discharged to the outside of the process unit 100 through exhaust lines 201 and 202, which will be described later.
  • the exhaust unit 200 may exhaust process gas and/or impurities in the processing space 111 to the outside.
  • the exhaust unit 200 may exhaust impurities and particles generated in the process of processing the substrate W to the outside of the process chamber 60 .
  • the exhaust unit 200 may include exhaust lines 201 and 202 and a pressure reducing member 210.
  • the exhaust lines 201 and 202 function as passages through which plasma and/or reaction by-products remaining in the processing space 111 are discharged to the outside of the process chamber 60 .
  • the exhaust lines 201 and 202 may be connected to the exhaust hole 112 formed on the bottom of the housing 110.
  • the exhaust lines 201 and 202 may be connected to a pressure reducing member 210 that provides negative pressure.
  • the pressure reducing member 210 may provide negative pressure to the processing space 111.
  • the pressure reducing member 210 may discharge plasma, impurities, or particles remaining in the processing space 111 to the outside of the housing 110 . Additionally, the pressure reducing member 210 may provide negative pressure to maintain the pressure of the processing space 111 at a preset pressure.
  • the pressure reducing member 210 may be a pump. However, it is not limited to this, and the pressure reducing member 210 is a known device that provides negative pressure and may be provided in various modifications.
  • the plasma generation unit 300 may be located at the top of the process unit 100. Additionally, the plasma generation unit 300 may be located at the top of the housing 110. According to one example, the plasma generation unit 300 may be separated from the process unit 100. In this case, the plasma generation unit 300 may be provided outside the process unit 100.
  • the plasma generation unit 300 generates plasma from process gas supplied from a gas supply pipe 320, which will be described later, and supplies it to the processing space 111.
  • the plasma generation unit 300 may include a plasma chamber 310, a process gas supply pipe 320, and a plasma source 330.
  • a discharge space 311 is formed inside the plasma chamber 310.
  • the plasma chamber 310 may have an open top and bottom surface.
  • the plasma chamber 310 may have a cylindrical shape with open upper and lower surfaces.
  • the plasma chamber 310 may be made of a material containing quartz.
  • the top of the plasma chamber 310 is sealed by a gas supply port 315.
  • the gas supply port 315 is connected to the gas supply pipe 320.
  • the process gas may be a reactive gas for plasma generation.
  • the reaction gas may include difluoromethane (CH2F2), nitrogen (N2), and oxygen (O2).
  • the reaction gas may further include other types of gases such as CF4 (Tetrafluoromethane), Fluorine, Hydrogen, etc.
  • Process gas is supplied to the discharge space 311 through the gas supply port 315.
  • the process gas supplied to the discharge space 311 may be uniformly distributed into the processing space 111 through the inlet space 341 of the induction unit and the baffle hole 131, which will be described later.
  • the plasma source 330 generates plasma by exciting the process gas supplied to the discharge space 311.
  • the plasma source 330 applies high-frequency power to the discharge space 311 to excite the process gas supplied to the discharge space 311.
  • the plasma source 330 may include an antenna 331 and a power source 332.
  • the antenna 331 may be an inductively coupled plasma (ICP) antenna.
  • the antenna 331 may be provided in a coil shape.
  • the antenna 331 may wrap around the plasma chamber 310 multiple times from outside the plasma chamber 310 .
  • the antenna 331 may wrap around the plasma chamber 310 in a spiral shape multiple times outside the plasma chamber 310.
  • the antenna 331 surrounds the plasma chamber 310 in an area corresponding to the discharge space 311.
  • One end of the antenna 331 may be provided at a height corresponding to the upper area of the plasma chamber 310 when viewed from the front end of the plasma chamber 310 .
  • the other end of the antenna 331 may be provided at a height corresponding to the lower area of the plasma chamber 310 when viewed from the top of the plasma chamber 310.
  • One end of the antenna 331 may be connected to the power source 332, and the other end of the antenna 331 may be grounded. However, it is not limited to this, and one end of the antenna 331 may be grounded, and the power source 332 may be connected to the other end of the antenna 331.
  • the antenna 331 and the plasma chamber 310 may be provided as one module surrounded by the first plate 314, the second plate 312, and the third plate 313.
  • a first plate 314 may be provided at the bottom of the plasma chamber 310, and a second plate 312 may be provided at the top of the plasma chamber 310.
  • the first plate 314 may be provided to span the bottom of the plasma chamber 310.
  • the first plate 314 and the plasma chamber 310 may be provided perpendicular to each other.
  • the second plate 312 may be provided to span the top of the plasma chamber 310.
  • the second plate 312 and the plasma chamber 310 may be provided perpendicular to each other.
  • the third plate 313 may be provided to connect the first plate 314 and the second plate 312 to each other.
  • the third plate 313 may form the side of the module.
  • the first plate 314, the second plate 312, and the third plate 313 may be made of a metal material.
  • the first plate 314, the second plate 312, and the third plate 313 may be made of aluminum.
  • the power source 332 may apply power to the antenna 331.
  • the power source 332 may apply high-frequency current to the antenna 331.
  • the high frequency current applied to the antenna 331 may form an induced electric field in the discharge space 311.
  • the process gas supplied to the discharge space 311 may be converted into a plasma state by obtaining energy required for ionization from an induced electric field.
  • the antenna 331 and the plasma chamber 310 are provided as one module, but the present invention is not limited thereto.
  • the antenna 331 is not modularized with the plasma chamber 310, and may be wound around the plasma chamber 310 multiple times from outside the plasma chamber 310.
  • Induction unit 340 is located between plasma chamber 310 and housing 110.
  • the induction unit 340 seals the open upper surface of the housing 110.
  • an inflow space 341 is provided to diffuse the plasma generated in the discharge space 311.
  • the inflow space 341 connects the processing space 111 and the discharge space 311 and functions as a passage through which plasma generated in the discharge space 311 is supplied to the processing space 111.
  • the induction unit 340 may be formed in a generally inverted funnel shape.
  • the guidance unit 340 may have a shape whose diameter increases from top to bottom.
  • the inner peripheral surface of the induction unit 340 may be formed of a non-conductor.
  • the housing 110 and the baffle 130 may be combined at the bottom of the induction unit 340.
  • the induction unit 340 may be connected to the bottom of the plasma chamber 310.
  • the upper end of the induction unit 340 and the lower end of the plasma chamber 310 may be connected.
  • An upper flange 346 on which the plasma chamber is mounted is provided at the top of the induction unit 340.
  • the upper flange 346 is connected to the lower end of the plasma chamber 310.
  • the sealing member 400 is provided at a connection portion between the induction unit 340 and the plasma chamber 310.
  • the sealing member 400 seals between the induction unit 340 and the plasma chamber 310.
  • FIG. 5 is a perspective view schematically showing the sealing member and the upper flange of FIG. 4,
  • FIG. 6 is an enlarged view of the main part showing the sealing member shown in FIG. 5
  • FIG. 7 is a cutaway perspective view of the packing shield of FIG. 5, and
  • FIG. 9 is a diagram for explaining the mounting structure of the packing shield, and
  • Figure 10 is a diagram showing the excess space within the sealing member.
  • the sealing member 400 may include packing 410, packing flange 420, and packing shield 430.
  • Packing 410 may be made of an elastic material.
  • the packing 410 may be provided in the form of an O-ring with a circular cross-section.
  • Packing flange 420 may be secured to the upper flange 346 of guidance unit 340 to support packing 410.
  • the packing flange 420 coupled to the upper flange 346 is provided with a seal space on the inside, and the packing 410 is located in the seal space.
  • the packing 410 is compressed by being pressed against the inclined inner surface of the packing flange 420 and comes into close contact with the outer surface 319 of the plasma chamber 310 and the upper surface 347 of the upper flange 346. At this time, the packing 410 is compressed within the seal space, creating a triangular-shaped surplus space 428 (see FIG. 10).
  • a packing shield 430 is provided in the surplus space 428.
  • a cooling line 440 is provided on the packing flange 420. Refrigerant flows through the cooling line 440, and the packing 410 can be cooled by the packing flange 420.
  • the packing shield 430 blocks the packing 410 from being directly exposed to plasma flowing out through the gap G between the plasma chamber 310 and the upper flange 346.
  • the packing shield 430 has a cross-sectional shape with a vertex 431 where two sides 432 and 433 meet.
  • the vertex 431 of the packing shield 430 may be positioned in the surplus space 428 to face the gap G. That is, the packing shield 430 blocks plasma penetrating into the surplus space 428 through the gap G, thereby minimizing etching (damage) of the packing 410 by plasma.
  • the packing shield may be made of a material that is highly corrosion resistant to plasma.
  • the packing shield may be made of PTFE (Polytetrafluroethylene).
  • the packing shield 430 is formed to have a triangular cross-sectional shape.
  • the opposite side 434 facing the vertex toward the gap G may be a straight line.
  • the first side 432 of the packing shield is in contact with the upper surface 347 of the upper flange 346, and the second side 433 is in contact with the outer surface 319 of the plasma chamber 310.
  • the vertex is located adjacent to the gap (G).
  • 11 to 16 are views showing various modifications of the packing shield.
  • the packing shield 430a according to the first modification may be provided in a cross-sectional shape where the first side 432a is wider than the second side 433a.
  • the packing shield 430b according to the second modification example may be provided in a cross-sectional shape where the second side 433b is wider than the first side 432b.
  • Figures 13 and 14 are views showing a third modification of the packing shield.
  • the packing shield 430c according to the third modification example may be provided in a concave shape with the opposite side 434c facing the vertex 431c. At this time, the concave stool 434c may be in contact with the packing 410.
  • Figures 15 and 16 are views showing a fourth modification of the packing shield.
  • the packing shield 430d according to the fourth modification may be provided in a convex shape with the opposite side 434d facing the vertex 431d. At this time, the convex side surface 434d is in contact with the packing 410 and is pressed, allowing the vertex 431d to come into closer contact with the gap G.
  • the packing shield is installed in the surplus space to minimize empty space in the surplus space and primarily blocks the gap, thereby preventing high-temperature plasma and/or process gas penetrating through the gap.
  • the amount of inflow can be minimized, and damage to the packing caused by high-temperature plasma and/or process gas flowing into the surplus space can be minimized.
  • the packing shield which is exposed to plasma, etc. at a relatively high frequency, is provided with a material with strong corrosion resistance, thereby preventing the packing from being etched by high-temperature plasma and/or process gas penetrating through the gap. It can be minimized.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de traitement d'un substrat. L'appareil de traitement du substrat comprend : un boîtier qui renferme un espace de traitement ; une unité de génération de plasma qui génère du plasma à partir d'un gaz de procédé ; une unité d'induction située entre l'unité de génération de plasma et le boîtier et fournissant un passage par lequel le plasma est cédé à l'espace de traitement ; et un élément d'étanchéité disposé pour sceller une partie de raccordement de l'unité de génération de plasma et de l'unité d'induction. L'élément d'étanchéité peut comprendre : une garniture ; une bride de garniture qui supporte la garniture ; et un blindage de garniture qui bloque l'exposition directe de la garniture au plasma s'écoulant à travers un espace dans la partie de liaison.
PCT/KR2023/005933 2022-05-30 2023-05-02 Appareil de traitement de substrat WO2023234568A1 (fr)

Applications Claiming Priority (2)

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KR10-2022-0066053 2022-05-30
KR1020220066053A KR20230166287A (ko) 2022-05-30 2022-05-30 기판 처리 장치

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WO2023234568A1 true WO2023234568A1 (fr) 2023-12-07

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106298A (ja) * 1998-09-28 2000-04-11 Tokyo Electron Ltd プラズマ処理装置
KR20010056330A (ko) * 1999-12-15 2001-07-04 황 철 주 반도체소자 제조장치
KR20080025742A (ko) * 2005-07-07 2008-03-21 맷슨 테크놀로지, 인크. 부식 배리어를 갖춘 시일 장치 및 방법
KR101645813B1 (ko) * 2014-10-14 2016-08-05 (주)트리플코어스코리아 플라즈마 처리 장치
KR102116475B1 (ko) * 2020-02-24 2020-05-28 피에스케이 주식회사 실링 유지 부재 및 기판 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106298A (ja) * 1998-09-28 2000-04-11 Tokyo Electron Ltd プラズマ処理装置
KR20010056330A (ko) * 1999-12-15 2001-07-04 황 철 주 반도체소자 제조장치
KR20080025742A (ko) * 2005-07-07 2008-03-21 맷슨 테크놀로지, 인크. 부식 배리어를 갖춘 시일 장치 및 방법
KR101645813B1 (ko) * 2014-10-14 2016-08-05 (주)트리플코어스코리아 플라즈마 처리 장치
KR102116475B1 (ko) * 2020-02-24 2020-05-28 피에스케이 주식회사 실링 유지 부재 및 기판 처리 장치

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