WO2023119874A1 - CORPS MOULÉ EN SiC POLYCRISTALLIN - Google Patents

CORPS MOULÉ EN SiC POLYCRISTALLIN Download PDF

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WO2023119874A1
WO2023119874A1 PCT/JP2022/040454 JP2022040454W WO2023119874A1 WO 2023119874 A1 WO2023119874 A1 WO 2023119874A1 JP 2022040454 W JP2022040454 W JP 2022040454W WO 2023119874 A1 WO2023119874 A1 WO 2023119874A1
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sic
plane
polycrystalline sic
polycrystalline
main surface
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PCT/JP2022/040454
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English (en)
Japanese (ja)
Inventor
卓志 飯田
郁哉 ▲高▼橋
聖 福田
博之 神藤
励子 屋敷田
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東海カーボン株式会社
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Publication of WO2023119874A1 publication Critical patent/WO2023119874A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present invention relates to polycrystalline SiC compacts.
  • Polycrystalline SiC compacts have excellent mechanical strength properties, electrical properties, heat resistance, chemical stability, etc., and are used in various industrial applications.
  • polycrystalline SiC compacts are used in high-temperature and high-purity atmospheres, and their main uses include members constituting CVD reactors.
  • JP 2021-085092 A Japanese Patent Application Laid-Open No. 2021-134111 JP 2019-199078 A Japanese Patent Application Laid-Open No. 2020-33239
  • the polycrystalline SiC molded body When used for such applications, for example, the polycrystalline SiC molded body is required to have a lower thermal conductivity in order to easily maintain a high temperature once heated. At the same time, for the purpose of making deformation of the member difficult, it is required to have higher mechanical strength, specifically, higher breaking strength.
  • Patent Document 1 a method for producing a silicon carbide polycrystalline film with few voids for the purpose of suppressing an increase in electrical resistance
  • Patent Document 2 a porous body containing voids and exhibiting excellent thermal shock resistance
  • Patent Document 3 voids are introduced into the base material SiC, such as ceramic compacts for sintering (Patent Document 3) for the purpose of reducing residual stress, to exhibit a predetermined effect. Proposed.
  • a void when a void is introduced, the void becomes a starting point of fracture, resulting in a decrease in mechanical strength.
  • Patent Document 4 As a means for reducing the thermal conductivity of a polycrystalline SiC compact, there is known a means for restricting the orientation of the structure in a specific direction with respect to the thickness direction (Patent Document 4).
  • Patent Document 4 a means for restricting the orientation of the structure in a specific direction with respect to the thickness direction
  • an object of the present invention is to provide a technique that can reduce the thermal conductivity in the direction normal to the main surface of a polycrystalline SiC molded body without reducing the mechanical strength.
  • one embodiment of the present invention is a polycrystalline SiC molded body composed of a first structure and a second structure, wherein the polycrystalline SiC molded body is plate-shaped and has a substantially planar main surface.
  • the first structure is polycrystalline SiC having a 3C type crystal structure
  • the second structure is a structure different from the first structure
  • the first structure is the A structure in which the (111) plane, the (200) plane, the (220) plane, or the (311) plane is oriented along the substantially normal direction of the main surface of the polycrystalline SiC compact, and
  • the area fraction of the structure of 1 is more than 0% and less than 50%, the average crystal grain size is 5 ⁇ m or less
  • the X-ray diffraction pattern on the main surface shows SiC (111) plane, SiC (200) plane, SiC A polycrystalline SiC compact in which the ratio of the X-ray diffraction peak intensity of the SiC (111) plane to the sum of the X-ray diffraction peak intensities of the (220) plane and the SiC (311) plane is 0.8 or more.
  • one embodiment of the present invention is the polycrystalline SiC molded body described above, wherein the cross section includes 0 or more and less than 40 voids per 1 cm 2 whose circumscribing circles have a diameter of more than 1 ⁇ m. Further, one embodiment of the present invention is the polycrystalline SiC molded body, wherein the thermal conductivity in the normal direction of the main surface is 90 to 130 W/m ⁇ K. Further, one embodiment of the present invention is the polycrystalline SiC compact having a three-point bending strength of 560 MPa or more and a Young's modulus of 250 GPa or more according to JIS R 1601.
  • a technique is provided that can reduce the thermal conductivity in the direction normal to the main surface of the polycrystalline SiC molded body without reducing the mechanical strength.
  • FIG. 1 is a schematic diagram showing an example of the shape of a polycrystalline SiC compact.
  • FIG. 2 is a schematic diagram showing an example of a cross section parallel to the normal D to the main surface of the polycrystalline SiC compact 1.
  • FIG. 3 is a schematic diagram showing an example of a system for manufacturing a polycrystalline SiC compact.
  • FIG. 4 is data showing an example of an EBSD orientation map in the direction normal to the main surface of a polycrystalline SiC compact.
  • FIG. 1 is a schematic diagram showing an example of the shape of a polycrystalline SiC molded body.
  • FIG. 2 is a schematic diagram showing an example of a cross section parallel to the normal D to the main surface of the polycrystalline SiC compact 1.
  • the polycrystalline SiC compact will be described below with reference to FIGS. 1 and 2.
  • FIG. A polycrystalline SiC compact 1 according to the present embodiment is plate-shaped and has a substantially planar main surface 2 .
  • the "plate-like" is preferably columnar having a height, that is, a thickness, and the shape of the upper base and/or the lower base is preferably disc-like.
  • the “main surface” 2 of the polycrystalline SiC molded body 1 refers to the upper and/or lower base of the columnar shape.
  • the thickness of the polycrystalline SiC compact is, for example, 0.1 to 5.0 mm, preferably 0.2 to 3.0 mm.
  • a polycrystalline SiC compact consists of a "first structure” 3 and a “second structure” 4.
  • the "first organization” 3 and the “second organization” 4 are organizations with different structures.
  • the “first texture” is polycrystalline SiC having a 3C type crystal structure, and the (111) plane of SiC having a 3C type crystal structure along the direction of the approximate normal to the main surface of the polycrystalline SiC compact, It is a structure in which the (200) plane, (220) plane or (311) plane is oriented.
  • the “substantially normal direction” is a direction within a range of ⁇ 10° from the normal D to the main surface 2 of the polycrystalline SiC compact 1 .
  • the "second texture” is polycrystalline SiC having a 3C type crystal structure or polycrystalline SiC having a 4H type crystal structure or a 6H type crystal structure.
  • the second structure is polycrystalline SiC having a 3C type crystal structure
  • the second structure is SiC having a 3C type crystal structure along the substantially normal direction of the main surface of the polycrystalline SiC compact.
  • the (111) plane, (200) plane, (220) plane, or (311) plane of is a texture in which none of the planes is oriented.
  • the area fraction of the first structure on the main surface is more than 0% and less than 50%.
  • the area fraction of the first tissue is more preferably greater than 0% and less than 40%.
  • the "area fraction of the first structure" can be obtained by the method described in Examples below.
  • the average crystal grain size of the polycrystalline SiC compact is 5 ⁇ m or less.
  • the average grain size is preferably 0.5-5 ⁇ m, more preferably 0.1-3 ⁇ m.
  • average crystal grain size is a value calculated from the size of a region observed as a single region by an EBSD (Electron Backscatter Diffraction) method.
  • the “single region” is a region having the same crystal structure and the same orientation with respect to the main surface 2 .
  • Average crystal grain size is a value obtained by multiplying the area of the above single region by the total area of the observation region divided by the area of the single region in the entire region observed by the EBSD method. is obtained for all single regions and refers to their total value.
  • the polycrystalline SiC compact 1 has an X-ray diffraction peak intensity ratio of the SiC (111) plane of 0.8 or more in the X-ray diffraction pattern on the main surface 2 .
  • the ratio of the X-ray diffraction peak intensity of the SiC (111) plane is a value obtained based on the X-ray diffraction pattern obtained by measuring the main surface. It represents the ratio of the X-ray diffraction peak intensity of the SiC (111) plane to the sum of the diffraction peak intensities of the SiC (220) plane and the SiC (311) plane.
  • the ratio of the X-ray diffraction peak intensity of the SiC (111) plane differs depending on the position within the main surface 2, the value at the center of the main surface is the X-ray diffraction peak of the SiC (111) plane.
  • the X-ray diffraction peak intensity ratio of the SiC (111) plane is preferably 0.9 or more.
  • polycrystalline SiC molding having low thermal conductivity in the normal direction to the main surface without reducing the number of voids and impairing the mechanical strength you get a body
  • voids per 1 cm 2 there are 0 or more and less than 40 voids per 1 cm 2 , preferably 0 or more and less than 20 voids per 1 cm 2 , and more preferably 0 or more and less than 20 voids whose circumscribing circle diameter is more than 1 ⁇ m. is 0 or more and less than 5 per 1 cm 2 , and a polycrystalline SiC molded body 1 having a cross section parallel to the normal line D is obtained.
  • the term "circumscribed circle” used with respect to voids means an imaginary circle circumscribing the voids observed in the cross-section of the polycrystalline SiC compact.
  • the three-point bending strength of the polycrystalline SiC molded body 1 according to JIS R 1601 can be, for example, 560 MPa or more.
  • the Young's modulus of the polycrystalline SiC compact 1 can be made 250 GPa or more.
  • the thermal conductivity of the polycrystalline SiC compact can be set to, for example, 90 to 130 W/m ⁇ K.
  • it is preferably 100 to 130 W/m ⁇ K.
  • Polycrystalline SiC compacts are suitable for applications where they are used in high-temperature and high-purity atmospheres. Such uses include CVD reactor components and the like.
  • FIG. 3 is a schematic diagram showing an example of a manufacturing system used in the method for manufacturing a polycrystalline SiC compact according to this embodiment.
  • This manufacturing system 5 is provided with a CVD reactor 6 and a mixing section 7 .
  • the mixing unit 7 the carrier gas output from the carrier gas container 8, the raw material gas output from the raw material gas container 9 and serving as the SiC raw material, and the nitrogen-containing gas output from the nitrogen-containing gas container 10 are mixed, A mixed gas is produced.
  • the nitrogen-containing gas is not necessarily required, and can be omitted when the polycrystalline SiC compact is not doped with nitrogen.
  • the mixed gas After passing through the mixing section 7 , the mixed gas passes through the flow meter 11 and is introduced into the CVD reactor 6 through the gas introduction nozzle 12 .
  • a support substrate 13 is positioned within the CVD reactor 6 .
  • the support substrate 13 can preferably be made of graphite.
  • the support substrate 13 is preferably disc-shaped.
  • the support substrate 13 is heated during operation.
  • a mixed gas containing a nitrogen-containing gas is introduced, a nitrogen-doped polycrystalline SiC film is obtained.
  • the polycrystalline SiC film obtained in the above steps is separated from the support substrate 13 after the film formation is completed, and if necessary, the surface separated from the support substrate 13 and / or the surface facing the surface is mainly It is plane-ground so that it may become the surface 2. Thus, a polycrystalline SiC compact 1 is obtained.
  • the polycrystalline SiC compact according to the present embodiment is obtained by controlling the film formation conditions such as the reaction temperature of the CVD reaction, the concentration of the raw material gas in the mixed gas, the pressure in the CVD reactor 6, and the like. 1 can be obtained.
  • the above manufacturing method can be applied regardless of whether it is a hot wall method or a cold wall method.
  • a hot wall method for example, by adopting the cold-wall type CVD reactor 6 , decomposition of the raw material gas in the gas phase other than the supporting substrate 13 is suppressed in the CVD reactor 6 . As a result, the crystal grain size of the polycrystalline SiC film can be reduced.
  • a heating method of the support base material 13 in the CVD reactor 6 is not particularly limited. Any heating method, for example, resistance heating, induction heating, or laser heating, can be employed.
  • the heating temperature (the temperature of the support base material 13) when forming the polycrystalline SiC film on the support base material 13 is, for example, 1200 to 1400.degree.
  • the heating temperature during formation of the polycrystalline SiC film affects the crystal structure of the obtained polycrystalline SiC film.
  • the furnace wall and heat insulating material in the CVD reactor 6 must be at a temperature (e.g., 1000° C. or less, preferably 700° C. or less) at which SiC and decomposition products of the source gas do not accumulate. is preferred.
  • each flow rate of the gas has a predetermined ratio based on the flow rate of the raw material gas.
  • the ratio of (source gas flow rate):(carrier gas flow rate):(nitrogen-containing gas flow rate) is preferably set to 1:(1.5 to 2.9):3.
  • the nitrogen-containing gas it is preferable to set the ratio of (raw material gas flow rate):(carrier gas flow rate) to 1:(1.5 to 4).
  • the carrier gas flow rate is 1.5 times or more with respect to the raw material gas flow rate.
  • a raw material gas serving as a supply source of SiC may be a one-component system (a gas containing Si and C) or a two-component system (a gas containing Si and a gas containing C).
  • one-component raw material gases include trichloromethylsilane, trichlorophenylsilane, dichloromethylsilane, dichlorodimethylsilane, and chlorotrimethylsilane.
  • the two-component raw material gas include a mixture of a silane-containing gas such as trichlorosilane and monosilane, and a hydrocarbon gas.
  • the flow rate of the raw material gas is, for example, 1 to 50 L/min. , preferably 2 to 30 L/min. , more preferably 3 to 20 L/min. is.
  • a carrier gas used during film formation is not particularly limited, and hydrogen gas or the like can be used, for example.
  • the carrier gas flow rate is, for example, 5 to 100 L/min. , preferably 10 to 70 L/min. is.
  • a nitrogen-containing gas is used. Any nitrogen-containing gas may be used as long as it can dope the polycrystalline SiC film with nitrogen.
  • nitrogen gas is used as the nitrogen-containing gas.
  • the flow rate of the nitrogen-containing gas is, for example, 5-100 L/min. , preferably 10 to 60 L/min. is.
  • the pressure inside the CVD reactor 6 during the formation of the polycrystalline SiC film is, for example, 50 to 150 kPa, preferably 70 to 110 kPa.
  • Example 1 As a CVD reactor, a polycrystalline SiC compact manufacturing system 5 having the configuration shown in FIG. 3 was prepared. A graphite substrate having a diameter of 230 mm and a thickness of 5 mm was prepared as the supporting substrate 13 and placed in the CVD reactor 6 .
  • Example 1 in Table 1 a polycrystalline SiC film was formed on the support substrate 13 .
  • MTS trimethylsilane
  • H 2 gas was used as a carrier gas.
  • N 2 gas was used as the nitrogen-containing gas.
  • a raw material gas, a carrier gas, and a nitrogen-containing gas were mixed in the mixing section 7 to generate a mixed gas.
  • a mixed gas was introduced into the CVD reactor 6 .
  • the amount of the mixed gas introduced, that is, the mixed gas flow rate is a value measured by the flow meter 11 .
  • the amounts of MTS gas, H 2 gas, and N 2 gas supplied were as described in Example 1 in Table 1, respectively.
  • the concentration of each gas in the mixed gas was set as described in Example 1 in Table 1.
  • the reaction temperature that is, the temperature of the supporting substrate 13) was 1340°C.
  • the graphite base material was removed from the polycrystalline SiC film to obtain a polycrystalline SiC compact with a diameter of 215 mm and a thickness of 3 mm. Then, the obtained polycrystalline SiC molded body was ground to a smooth surface on the surface separated from the graphite substrate and/or the surface opposite to the surface. Further, the polycrystalline SiC molded body was processed so as to have a predetermined diameter. As a result, a polycrystalline SiC compact with a diameter of 210 mm and a thickness of 2 mm was obtained. This was used as a polycrystalline SiC compact according to Example 1.
  • Example 2-6 and Comparative Examples 1-6 A polycrystalline SiC film was formed in the same manner as in Example 1. Here, the conditions for forming the polycrystalline SiC film were changed to the conditions shown in Tables 1 and 2.
  • EBSD orientation maps were measured in the ⁇ 10° direction (hereinafter referred to as the ND direction) of the main surface normal direction of the polycrystalline SiC molded bodies obtained in Examples 1 to 6 and Comparative Examples 1 to 6. bottom.
  • the EBSD orientation map the (111) plane, (200) plane, (220) plane or (311) plane of the 3C type crystal structure SiC is oriented along the ND direction. ” was extracted. Based on the extraction results, the area fraction (%) of the “first structure” in the measurement area of 100 ⁇ m ⁇ 100 ⁇ m was obtained.
  • the measurement conditions for the EBSD orientation map were as follows. Pretreatment: Mechanical polishing, carbon deposition equipment: FE-SEM SU-70 manufactured by Hitachi High-Tech DigiView manufactured by EBSD TSL Solutions Measurement conditions: Voltage: 20 kV Radial angle: 70° Measurement area: 100 ⁇ m ⁇ 100 ⁇ m Measurement interval: 0.03 ⁇ m Evaluation target crystal system: 3C type SiC (space group 216)
  • the diffraction angle 2 ⁇ was 20.0 to 80.0 deg. is used as the background correction value, and the diffraction angle 2 ⁇ is 35.3 to 36.0 deg. was obtained as the diffraction peak intensity of the (111) plane of the 3C-type crystal structure SiC. Similarly, when the diffraction angle 2 ⁇ is 41.1 to 41.8 deg. was obtained as the diffraction peak intensity of the SiC (200) plane. Similarly, when the diffraction angle 2 ⁇ is 59.7 to 60.3 deg. was obtained as the diffraction peak intensity of the SiC (220) plane. Similarly, when the diffraction angle 2 ⁇ is 71.5 to 72.3 deg.
  • the diffraction peak intensity of the SiC (311) plane was obtained as the diffraction peak intensity of the SiC (311) plane. Then, the sum of the diffraction peak intensities of the SiC (111) plane, the SiC (200) plane, the SiC (220) plane, and the SiC (311) plane was obtained. Furthermore, the ratio of the diffraction peak intensity of the SiC (111) plane to the total value was obtained as the ratio of the X-ray diffraction peak intensity of the SiC (111) plane.
  • thermophysical property measuring device Thermo Wave Analyzer TA Method: Periodic heating radiation thermometry
  • Environmental temperature Room temperature
  • Tables 1 and 2 show the results.
  • the polycrystalline SiC molded bodies according to Examples 1 to 6 have an average crystal grain size of 5 ⁇ m or less, an area fraction of the first structure of 22 to 48%, and an X-ray diffraction of the SiC (111) plane The peak intensity ratio was 80% or greater (ie, 0.8 or greater).
  • Examples 1-6 were superior to Comparative Examples 1-6 in 3-point bending strength, Young's modulus and thermal conductivity according to JIS R 1601.

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

La présente invention concerne un corps moulé en SiC polycristallin comprenant une première structure et une seconde structure, le corps moulé en SiC polycristallin étant en forme de plaque et ayant une surface principale sensiblement plate, la première structure étant un SiC polycristallin ayant une structure cristalline de type 3C, la seconde structure étant différente de la première structure, dans la première structure, le plan (111), le plan (200), le plan (220) ou le plan (311) est orienté le long d'une direction sensiblement normale par rapport à la surface principale du corps moulé en SiC polycristallin, la fraction de surface de la première structure dans la surface principale est supérieure à 0 % et inférieure à 50 %, la taille moyenne de grain cristallin est de 5 µm ou moins, et dans le diagramme de diffraction par rayons X sur la surface principale, le rapport de l'intensité de pic de diffraction par rayons X du plan (111) de SiC sur l'intensité totale de pic de diffraction par rayons X du plan (111) de SiC, du plan (200) de SiC, du plan (220) de SiC et du plan (311) de SiC est de 0,8 ou plus.
PCT/JP2022/040454 2021-12-24 2022-10-28 CORPS MOULÉ EN SiC POLYCRISTALLIN WO2023119874A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
JP2016092122A (ja) * 2014-10-31 2016-05-23 三井造船株式会社 炭化珪素基板
JP2021046336A (ja) * 2019-09-18 2021-03-25 住友金属鉱山株式会社 黒鉛製支持基板の表面処理方法、炭化珪素多結晶膜の成膜方法および炭化珪素多結晶基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
JP2016092122A (ja) * 2014-10-31 2016-05-23 三井造船株式会社 炭化珪素基板
JP2021046336A (ja) * 2019-09-18 2021-03-25 住友金属鉱山株式会社 黒鉛製支持基板の表面処理方法、炭化珪素多結晶膜の成膜方法および炭化珪素多結晶基板の製造方法

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