WO2023109470A1 - 一种光刻胶掩模的显影方法、装置、系统及储存介质 - Google Patents

一种光刻胶掩模的显影方法、装置、系统及储存介质 Download PDF

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WO2023109470A1
WO2023109470A1 PCT/CN2022/134220 CN2022134220W WO2023109470A1 WO 2023109470 A1 WO2023109470 A1 WO 2023109470A1 CN 2022134220 W CN2022134220 W CN 2022134220W WO 2023109470 A1 WO2023109470 A1 WO 2023109470A1
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photoresist layer
developing
developing solution
photoresist
container
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PCT/CN2022/134220
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English (en)
French (fr)
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朱煜
郭林宝
王磊杰
张鸣
成荣
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清华大学
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Publication of WO2023109470A1 publication Critical patent/WO2023109470A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • the present disclosure relates to the technical field of photolithography, and in particular to a photoresist mask developing method, device, system and storage medium.
  • Diffraction grating is a basic optical component. With the continuous development of science and technology and the urgent need of industrial production, the demand for large-size diffraction gratings continues to increase. In the field of high-energy petawatt lasers, it is necessary to use large-scale diffraction gratings to expand and compress laser pulses. To output high-energy petawatt laser pulses (10 19 W/cm 2 ⁇ 10 21 W/cm 2 ), the area of the diffraction grating will reach 450mm ⁇ 1500mm. In the precision positioning measurement system, the complex assembly environment of the equipment puts forward complex appearance and shape requirements for the diffraction grating.
  • Photolithography is one of the production methods of diffraction gratings. In the production of large-size and high-line-density diffraction gratings, photolithography has the advantages of short production cycle and high product quality.
  • To make a diffraction grating by photolithography it is first necessary to make a photoresist mask on the surface of the substrate.
  • Development is an intermediate process in the process of making a photoresist mask. During the development process, the photoresist in the exposure area and the developer undergo chemical reaction, and finally a photoresist mask with a three-dimensional structure is obtained.
  • the commonly used The development method is difficult to ensure that the photoresist layer is uniformly covered by the developer, and it is easy to damage the microstructure of the photoresist mask, resulting in poor development quality of the photoresist layer on the surface of the large-scale substrate.
  • the present application proposes a developing method, device, system and storage medium of a photoresist mask, which can ensure that the photoresist is fully protected when developing the photoresist layer on the surface of a large-size substrate.
  • the layer is evenly covered by the developer, and at the same time, it can fully stir the developer to increase the mass transfer rate on the solid-liquid interface, and avoid the excessive impact of the developer from damaging the microstructure of the photoresist mask, thereby greatly improving The development quality of the photoresist layer on the surface of large-scale substrates.
  • a first aspect of the present disclosure provides a method for developing a photoresist mask, comprising:
  • the photoresist layer is released from the developing solution.
  • it also includes: after the photoresist layer is detached from the developer, removing the developer remaining on the photoresist layer, through this embodiment, the photoresist After the adhesive layer is separated from the developing solution, the developing solution remaining on the photoresist layer is removed to avoid affecting the developing effect of the photoresist layer.
  • the removing the developer remaining on the photoresist layer includes:
  • the cleaning solution in the container is discharged, and in this embodiment, the cleaning of the photoresist layer is completed by utilizing the structure of the developing device itself. It can work without other separate equipment, and the microstructure of the photoresist mask is not easy to be damaged during the cleaning process.
  • the fully immersing the exposed area of the photoresist layer in the developer in the container includes:
  • the clamping part moves to the part of the exposed area of the photoresist layer corresponding to the substrate and immerse in the developing solution.
  • the clamping part is used to fix the substrate to ensure that the The photoresist can remain stationary during the subsequent development process.
  • the substrate is kept in a vertical state in the developing solution.
  • the substrate is vertically inserted into the developing solution along a direction parallel to the photoresist layer, so that The substrate can fully contact the developing solution stirred by the floating air bubbles.
  • the method further includes: injecting gas into the developing solution at a target time.
  • the target moment includes:
  • the floating bubbles form a floating disturbance area in the developing solution, and the exposure area of the photoresist layer is in the floating disturbance area.
  • the air bubbles are used to stir The developing solution acts on the exposed area of the photoresist layer, and the fully stirred developing solution can increase the mass transfer rate on the solid-liquid reaction interface between the photoresist layer and the developing solution, To ensure the developing effect of the photoresist layer in the depth direction.
  • the gas is passed into the developing solution from the bottom of the photoresist layer to generate bubbles floating up, further comprising:
  • the size of the bubbles and the number of the bubbles are adjusted in real time to ensure In the case of fully stirring the developing solution, avoid damage to the microstructure of the photoresist mask due to excessive impact force of the developing solution.
  • the temperature of the developing solution is kept at the target temperature.
  • the reaction between the photoresist layer and the developing solution is greatly affected by the temperature, and the temperature of the developing solution during the developing process is ensured. Maintain the target temperature, which is the optimum temperature of the developing process, so as to avoid affecting the developing rate.
  • a second aspect of the present disclosure provides a developing device for a photoresist mask, comprising:
  • the clamping part is used to fix the photoresist layer in the developing solution
  • the bubble generator is arranged at the bottom of the container;
  • the bubble generator injects bubbles into the developing solution.
  • a third aspect of the present disclosure provides a developing system for a photoresist mask, comprising:
  • Air supply device providing air source to the bubble generator
  • Liquid control device to control the volume of liquid in the container
  • a temperature control device monitors and adjusts the temperature of the liquid in the container in real time
  • a fourth aspect of the present disclosure provides a storage medium, including: a readable storage medium and computer instructions, the computer instructions are stored in the readable storage medium; the computer instructions are used to implement the above-mentioned lithography The development method of the glue mask.
  • a photoresist mask developing method, device and system provided by the present disclosure has at least the following beneficial effects:
  • the photoresist layer on the surface of the large-size and irregular-shaped substrate can be uniformly covered by the developer to ensure the quality of development.
  • Figure 1 shows a schematic diagram of a developing system according to an embodiment of the present disclosure
  • FIG. 2 shows a schematic view of the structure of a developing device in one direction according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic view of the structure of a developing device in another direction according to an embodiment of the present disclosure
  • 101-substrate assembly 101-substrate assembly, 102-tracting device, 103-developing device, 104-cleaning device, 105-drying device, 106-gas supply device, 107-liquid control device, 108-computer equipment, 109-action command, 110-big Size substrate, 111-fixture, 112-liquid inlet, 113-container, 114-temperature measuring device, 115-temperature regulating device, 116-liquid level position of developer, 117-fixing part, 118-gas flow controller , 119-bubble generator, 120-area to be developed, 121-bubble floating area, 122-area where the photoresist layer is located.
  • Development is an intermediate process in the process of making a photoresist mask. During the development process, the photoresist in the exposure area reacts chemically with the developer, and finally a photoresist mask with a three-dimensional structure is obtained.
  • the photoresist on the surface of a large-scale substrate Uniform coating of the resist layer by the developer is a prerequisite for uniform development.
  • the conventional linear scanning method needs to use a nozzle wider than the substrate.
  • the nozzle moves from one end of the substrate to the other end of the substrate in a straight line, so that the developer flowing out of the nozzle covers the entire photoresist layer. It also requires a complex large-stroke motion device.
  • Well-designed nozzles are also required to ensure the uniformity of developer application, and even then, under the action of surface tension, there are differences in the developer liquid film between the edge of the substrate and the inner area, thereby reducing the uniformity of development.
  • the present disclosure provides a method for developing a photoresist mask, comprising:
  • Gas is introduced into the developer solution from the bottom of the photoresist layer to generate floating bubbles
  • the photoresist layer is separated from the developing solution.
  • the developer solution is stirred by the floating air bubbles, and the developer solution is fully stirred, so that the photoresist layer on the surface of the large-size substrate can be evenly covered by the developer solution, and ensure that the photoresist layer can ensure the photoresist layer during the development process.
  • the concentration of the developer near the surface of the adhesive layer remains stable, thereby ensuring the uniformity of developing the photoresist mask.
  • the exposed areas of the photoresist layer are completely immersed in a developer in a container comprising:
  • the volume of the developer solution can also be set to be able to immerse the large-sized substrate in the container.
  • the developer solution may include, but is not limited to, tetramethylammonium hydroxide solution, sodium hydroxide solution, and the like.
  • the exposed area of the photoresist layer corresponding to the substrate is kept in a vertical state in the developer, and the substrate is vertically inserted into the developer along a direction parallel to the photoresist layer, so that the substrate can be combined with the photoresist layer.
  • the developer solution agitated by the floating air bubbles fully contacts.
  • the fixing part is disposed on the container, and the fixing part can fix the fixture so that the large-sized substrate remains stationary during the developing process.
  • air bubbles are injected into the developing solution before the exposed area of the photoresist layer contacts the developing solution.
  • air bubbles are introduced into the developing solution when the exposed area of the photoresist layer is in contact with the developing solution.
  • air bubbles are introduced into the developing solution when the exposed area of the photoresist layer is completely immersed in the developing solution.
  • the floating bubbles form a floating disturbance area in the developer solution, and the exposure area of the photoresist layer is in the floating disturbance area, and the developer solution is stirred by the air bubbles introduced, so that the exposure area of the photoresist layer and the fully stirred developer solution
  • the reaction can increase the mass transfer rate on the solid-liquid reaction interface between the photoresist layer and the developer, and ensure the development effect of the photoresist layer in the depth direction.
  • the duration of the development reaction is different, and the hardness of the microstructure of the photoresist mask is also different.
  • the flow and pressure can be adjusted to adjust the number and size of bubbles, so that it can be applied to different photoresist layers for development, and has a wide range of applications.
  • the number of bubbles introduced into the developer should be reduced, and the bubbles should be adjusted to a smaller size, so as to avoid damage to the photoresist mask and affect the quality of development;
  • the photoresist layer reacts violently with the developer, that is, when the reaction time is short, the number of air bubbles introduced into the developer should be increased to ensure that the photoresist layer can be uniformly covered by the developer.
  • the flow rate and pressure of the gas passing into the developer are adjusted to adjust the number and size of the bubbles.
  • the size and the number of the bubbles are adjusted in real time to ensure that the developer is fully stirred. Next, avoid the excessive impact force of the developer and damage the microstructure of the photoresist mask.
  • the target temperature is the optimal temperature of the development process to avoid affecting the development. rate.
  • the optimal temperature may include but is not limited to 25°C.
  • it also includes: after the photoresist layer is released from the developer, remove the developer remaining on the photoresist layer, and in this embodiment, after the photoresist layer is released from the developer, remove The developer solution remaining on the photoresist layer should avoid affecting the developing effect of the photoresist layer.
  • removing the developer remaining on the photoresist layer may include rinsing with deionized water, and the developer in the container 113 is discharged by the liquid control device 107 through the liquid outlet 123, and then the liquid control device 107 passes through the liquid inlet.
  • the mouth 112 adds deionized water into the container 113.
  • the deionized water can immerse the large-size substrate 110.
  • the deionized water in the container 113 is discharged, and then the deionized water is added into the container 113 again. The process is repeated repeatedly to remove the residual developer on the large-size substrate 110 , the jig 111 and the photoresist layer 122 to complete the development.
  • the large-size substrate 110 before operating the large-size substrate 110 , firstly, the large-size substrate 110 needs to be fixed on the fixture 111 to form the substrate assembly 101 .
  • the jig 111 can be assembled with the mounting position of the large-size substrate 110 to form a whole, and the transfer of the substrate between process equipments is realized by transferring the jig.
  • the pulling device 102 can be connected with the fixture 111 , and can also transport the large-size substrate 110 between processes.
  • a developing device is shown at 103, and the large-size substrate is put into the developing device 103 by the pulling device 102, and the photoresist layer on the surface of the large-sized substrate reacts with the developing solution in the developing device 103, and a section time to obtain a photoresist mask.
  • the developing device includes: a container 113 for containing the developer; a fixing part 117 for fixing the jig 111 so that the photoresist layer is still in the developer; the bubble generator 119 is arranged on Bottom of the container 113; to pass bubbles into the developer solution through the bubble generator.
  • the clamping part includes a clip 111 .
  • a sufficient amount of developer needs to be added to the container 113 through the liquid inlet 112 by the liquid control device 107, and then, the temperature of the developer in the container 113 is monitored by the temperature measuring device 114, and the temperature is controlled by the temperature regulating device 115. Adjust the developer to the specified temperature, including dynamic heating and cooling.
  • the pulling device 102 pulls the chuck 111 to put the large-size substrate 110 into the container 113 .
  • the liquid surface position of the developer in the container 113 is shown.
  • the large-size substrate 110 is immersed in the developer, and the clamp 111 is fixed by the fixing part 117 on the container 113.
  • the large-sized substrate 110 is kept stationary during the process.
  • the gas flow controller 118 provides gas to the bubble generator 119, and the gas may include but is not limited to nitrogen.
  • the bubble generator 119 generates bubbles, and the bubble generator 119 can adjust the size of the generated bubbles.
  • the gas flow controller 118 can adjust the gas flow entering the bubble generator 119 , and the number of generated bubbles will be different if the gas flow entering the bubble generator 119 is different.
  • the area to be developed of the photoresist layer on the surface of the large-size substrate 110 is shown at 120, and the area covered by the floating path of the bubbles is shown at the dotted line box 121, and the bubble floating area 121 The area to be developed 120 is completely covered.
  • the bubble floating region 121 is disposed on the side of the photoresist layer to be developed region 120 that is in contact with the developing solution.
  • the bubble generator 119 is placed at the bottom of the container 113, the bottom of the large-size substrate 110 is higher than the position of the bubble generator 119, and the bubbles generated by the bubble generator 119 float up in the region 121 .
  • the developer solution in the container 113 can be discharged by the liquid control device 107 through the liquid outlet 123, and then the liquid control device 107 can pass through the liquid inlet 112
  • the deionized water can immerse the large-size substrate 110, keep it for a period of time, drain the deionized water in the container 113, and then add deionized water into the container 113 again.
  • the process is repeated repeatedly to remove the residual developer on the large-size substrate 110 , the jig 111 and the photoresist layer 122 to complete the development.
  • the developing solution in the container 113 can be discharged by the liquid control device 107 through the liquid outlet 123, and then Add deionized water into the container 113 from the liquid control device 107 through the liquid inlet 112.
  • the deionized water can immerse the large-size substrate 110, and then the bubble generator 119 generates bubbles to stir the deionized water.
  • the container 113 The deionized water is discharged, and then the deionized water is added to the container 113 again, and air bubbles are introduced. The process is repeated repeatedly to remove the residual developer on the large-size substrate 110 , the jig 111 and the photoresist layer 122 to complete the development.
  • the large-size substrate 110 can be taken out from the container 113 by pulling the chuck 111 with the pulling device 102 and put into the cleaning device 104, and the cleaning device 104 is removed.
  • the residual developer on the large-size substrate 110 , the jig 111 and the photoresist layer 122 is further developed.
  • the development system of the photoresist mask of the present disclosure includes the above-mentioned development device 103, and also includes:
  • the gas supply device 106 may include and is not limited to a gas source, a gas circuit, etc., the gas supply device 106 may provide gas to the bubble generator 119, and the gas supply device 106 may also provide gas to other devices requiring gas in the present disclosure gas;
  • the liquid control device 107 may include and is not limited to a liquid storage tank, pipelines and valves, etc., the liquid control device 107 can add liquid to the container 113, and can also discharge the liquid in the container 113, and the liquid control device 107 can also Liquid can be added to other devices in this disclosure that require liquid, and liquid in other devices in this disclosure that need to be drained can also be drained;
  • the traction device 102, the traction device 102 can handle the fixture 111 loaded with the large-size substrate 110;
  • the drying device can dry the photoresist layer, the large-size substrate 110 and the jig 111 ; and, a computer program of computer-readable instructions.
  • the system also includes a computer device 108 for controlling the traction means, fluid control means, air supply means, washing means and drying means.
  • computer equipment includes:
  • the memory stores processor-readable instructions 109;
  • the processor is arranged to read and execute instructions 109 stored in the memory.

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Abstract

一种光刻胶掩模的显影方法、装置、系统及储存介质，该显影方法包括：将光刻胶层的曝光区完全浸没于容器内的显影液中；由光刻胶层的下方向显影液中通入气体并产生上浮的气泡；待光刻胶层曝光区完全显影后，使光刻胶层从显影液中脱离。将光刻胶层浸没于显影液中，避免显影液涂覆不均的情况发生，同时利用上浮的气泡搅动显影液，通过调节气泡的尺寸和数量，既能充分搅拌显影液进而提高固-液界面上的传质速率，又能避免显影液的冲击力过大而损坏光刻胶掩模的微结构，从而提高大尺寸基板表面光刻胶层的显影质量。

Description

一种光刻胶掩模的显影方法、装置、系统及储存介质
相关申请的交叉引用
本申请要求享有于2021年12月16日提交的中国专利申请CN202111543776.4的优先权，上述申请的全部内容通过引用并入本文中。
技术领域
本公开涉及光刻技术领域，特别地涉及一种光刻胶掩模的显影方法、装置、系统及储存介质。
背景技术
衍射光栅是一种基础的光学元件，随着科技水平的不断发展和工业生产的迫切需要，对大尺寸衍射光栅的需求不断增加。在高能拍瓦激光领域，需要用大尺寸的衍射光栅展宽和压缩激光脉冲，要输出高能拍瓦激光脉冲(10 19W/cm 2～10 21W/cm 2)，衍射光栅的面积将达到450mm×1500mm。在精密定位测量系统中，设备复杂的装配环境对衍射光栅提出了复杂的外观形状要求。
光刻是衍射光栅的制作方法之一，在制作大尺寸高线密度的衍射光栅方面，光刻具有制作周期短、产品质量高等优点。用光刻法制作衍射光栅，首先需要在基板表面制作光刻胶掩模，显影是光刻胶掩模制作过程的中间工序，在显影过程中，曝光区内的光刻胶与显影液发生化学反应，最终得到具有三维结构的光刻胶掩模。
然而，目前在显影大尺寸基板表面的光刻胶层时，尤其是异形大尺寸基板表面的光刻胶层时，在光刻胶层和显影液之间的固-液反应过程中，常用的显影方法难以保证光刻胶层被显影液均匀包覆，易破坏光刻胶掩模的微结构，导致大尺寸基板表面光刻胶层的显影质量较差。
公开内容
针对上述现有技术中的问题，本申请提出了一种光刻胶掩模的显影方法、装置、系统及储存介质，能够使得在显影大尺寸基板表面的光刻胶层时，保证光刻胶层被显影液均匀包覆，同时还能充分搅拌显影液进而提高固-液界面上的传质速率，以及避免显影液的冲击力过大而损坏光刻胶掩模的微结构，进而大幅提高 大尺寸基板表面光刻胶层的显影质量。
本公开的第一方面提供了一种光刻胶掩模的显影方法，包括：
将光刻胶层的曝光区完全浸没于容器内的显影液中；
由所述光刻胶层的下方向所述显影液中通入气体并产生上浮的气泡；
待所述光刻胶层的曝光区完全显影后，使所述光刻胶层从所述显影液中脱离。
在一个实施方式中，还包括：所述光刻胶层从所述显影液中脱离后，去除残留在所述光刻胶层上的所述显影液，通过本实施方式，将所述光刻胶层从所述显影液中脱离后，去除残留在所述光刻胶层上的所述显影液，避免影响所述光刻胶层的显影效果。
在一个实施方式中，所述去除残留在所述光刻胶层上的所述显影液，包括：
排空所述容器内的所述显影液，使所述光刻胶层从所述显影液中脱离之后，向所述容器内注入能够完全浸没所述光刻胶层的清洗液；
向所述清洗液中通入气体并产生上浮的气泡；
待所述光刻胶层上的所述显影液被完全去除后，排出所述容器内的所述清洗液，通过本实施方式，利用显影装置自身结构，完成对所述光刻胶层的清洗工作，无需单独其他设备，且清洗过程中不易破坏光刻胶掩模的微结构。
在一个实施方式中，所述将光刻胶层的曝光区完全浸没于容器内的显影液中，包括：
将所述光刻胶层设置于固定在夹持部的基板的表面上；
移动所述夹持部至所述基板对应的所述光刻胶层的曝光区的部分浸没于所述显影液中，通过本实施方式，利用所述夹持部将所述基板固定，保证所述光刻胶在后续显影过程中能够保持静止。
在一个实施方式中，所述基板保持竖直状态于所述显影液中，通过本实施方式，将所述基板沿平行于所述光刻胶层的方向竖直进入所述显影液中，使得所述基板能够和被上浮的所述气泡搅动的显影液充分接触。
在一个实施方式中，还包括：在目标时刻向所述显影液中通入气体。
在一个实施方式中，所述目标时刻包括：
所述光刻胶层曝光区与所述显影液接触前；或
所述光刻胶层曝光区与所述显影液接触时；或
所述光刻胶层曝光区完全浸没于所述显影液中时，通过本实施方式，给出了通入所述气泡的具体三个时间点，在面对不同的光刻胶层显影时，均能够保证所述光刻胶层被所述显影液均匀显影。
在一个实施方式中，所述上浮的气泡在所述显影液中形成上浮扰动区域，所述光刻胶层的曝光区处于所述上浮扰动区域内，通过本实施方式，利用通入的气泡搅动所述显影液，使得作用于所述光刻胶层曝光区，被充分搅拌的所述显影液，能够提高所述光刻胶层与所述显影液固-液反应界面上的传质速率，保证所述光刻胶层在深度方向上的显影效果。
在一个实施方式中，所述由所述光刻胶层的下方向所述显影液中通入气体并产生上浮的气泡中，还包括：
调节通入所述显影液的气体的流量与压力，以调节所述气泡的数量与大小，通过本实施方式，在显影过程中，实时调节所述气泡的尺寸大小以及所述气泡的数量，保证在充分搅拌所述显影液的情况下，避免显影液的冲击力过大而损坏光刻胶掩模的微结构。
在一个实施方式中，所述将光刻胶层的曝光区完全浸没于容器内的显影液中之前，还包括：
保持所述显影液的温度为目标温度，通过本实施方式，在显影过程中，所述光刻胶层与所述显影液反应受温度的影响较大，保证显影过程中所述显影液的温度保持为目标温度，所述目标温度为显影工艺的最佳温度，避免影响显影速率。
本公开的第二方面提供了一种光刻胶掩模的显影装置，包括：
容器，用于容纳显影液；
夹持部，用于固定光刻胶层静止于所述显影液中；
气泡发生器，设置于所述容器底部；
所述气泡发生器向所述显影液中通入气泡。
本公开的第三方面提供了一种光刻胶掩模的显影系统，包括：
显影装置，用于光刻胶层的曝光区显影；
供气装置，向气泡发生器提供气源；
液体控制装置，控制容器内液体的体积；
牵引装置，用于移动夹持部；
控温装置，实时监测并调节所述容器内液体的温度；
本公开的第四方面提供了一种存储介质，包括：可读存储介质和计算机指令，所述计算机指令存储在所述可读存储介质中；所述计算机指令用于实现以上所述的光刻胶掩模的显影方法。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本公开的目的。
本公开提供的一种光刻胶掩模的显影方法、装置及系统，与现有技术相比，至少具备有以下有益效果：
(1)使得大尺寸异形基板表面的光刻胶层能够被显影液均匀包覆，保证显影的质量。
(2)操作简单，无需复杂的涂覆装置。
(3)利用上浮的气泡搅动显影液，通过调节气泡的尺寸和数量，既能充分搅拌显影液进而提高固-液界面上的传质速率，又能避免显影液的冲击力过大而损坏光刻胶掩模的微结构，从而提高大尺寸基板表面光刻胶层的显影质量。
(4)将大尺寸异形基板沿平行于所述光刻胶层的方向竖直进入所述显影液中，使得基板能够和被上浮的气泡搅动的显影液充分接触。
附图说明
在下文中将基于实施例并参考附图来对本公开进行更详细的描述。其中：
图1显示了本公开的一个实施例的显影系统的示意图；
图2显示了本公开的一个实施例的显影装置的一个方向上的结构示意图；
图3显示了本公开的一个实施例的显影装置的另一个方向上的结构示意图；
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
附图标记：
101-基板组件，102-牵引装置，103-显影装置，104-清洗装置，105-干燥装置，106-供气装置，107-液体控制装置，108-计算机设备，109-动作指令，110-大尺寸基板，111-卡具，112-进液口，113-容器，114-测温装置，115-调温装置，116-显影液的液面位置，117-固定部，118-气体流量控制器，119-气泡发生器，120-待显影区域，121-气泡上浮区域，122-光刻胶层所在区域。
具体实施方式
下面将结合附图对本公开作进一步说明。
显影是光刻胶掩模制作过程的中间工序，在显影过程中，曝光区内的光刻胶与显影液发生化学反应，最终得到具有三维结构的光刻胶掩模，大尺寸基板表面的光刻胶层被显影液均匀包覆是实现均匀显影的前提条件。
若采用常规的旋转基板法显影，需复杂的旋转参数设计来调整离心力与液体表面张力间的平衡关系，以此得到均匀的液膜，然而对于尺寸较大且形状不规则的基板，平衡关系的调控十分困难，且需要更庞大复杂的牵引装置。
常规的直线扫描法需要使用比基板更宽的喷嘴，喷嘴从基板的一端沿直线运动至基板的另一端，使喷嘴流出的显影液覆盖整个光刻胶层，也需要复杂的大行程运动装置，还需要精心设计的喷嘴来保障显影液涂覆的均匀性，即便如此，在表面张力的作用下，基板边缘和内部区域的显影液液膜也存在差异，从而降低了显影的均匀性。
本公开提供了一种光刻胶掩模的显影方法，包括：
将光刻胶层的曝光区完全浸没于容器内的显影液中；
由光刻胶层的下方向显影液中通入气体并产生上浮的气泡；
待光刻胶层的曝光区完全显影后，使光刻胶层从显影液中脱离。
需要说明的是，利用上浮的气泡搅动显影液，充分搅拌显影液，使得大尺寸基板表面的光刻胶层能够被显影液均匀包覆，并保证光刻胶层在显影过程中能够保证光刻胶层表面附近的显影液浓度保持稳定，进而保证光刻胶掩模显影的均匀性。
在一个实施例中，将光刻胶层的曝光区完全浸没于容器内的显影液中，包括：
将光刻胶层设置于固定在夹持部的基板的表面上；
移动夹持部至基板对应的光刻胶层的曝光区的部分浸没于显影液中；利用夹持部将基板固定，保证光刻胶在后续显影过程中能够保持静止。
在一个实施例中，显影液的体积还可以设置为能够浸没容器中的大尺寸基板。
在一个实施例中，显影液可以包含且不限于四甲基氢氧化铵溶液、氢氧化钠溶液等。
在一个实施例中，基板对应的光刻胶层的曝光区保持竖直状态于显影液中，将基板沿平行于所述光刻胶层的方向竖直进入显影液中，使得基板能够和被上浮的气泡搅动的显影液充分接触。
在一个实施例中，固定部设置在容器上，固定部可以固定卡具使得大尺寸基板在显影过程中保持静止。
在一个实施例中，在光刻胶层曝光区与显影液接触前向显影液中通入气泡。
在一个实施例中，在光刻胶层曝光区与显影液接触时向显影液中通入气泡。
在一个实施例中，在光刻胶层曝光区完全浸没于显影液时向显影液中通入气泡。
具体地，上浮的气泡在显影液中形成上浮扰动区域，光刻胶层的曝光区处于上浮扰动区域内，利用通入的气泡搅动显影液，使得光刻胶层曝光区与充分搅拌的显影液反应，能够提高光刻胶层与显影液固-液反应界面上的传质速率，保证光刻胶层在深度方向上的显影效果。
在一个实施例中，由于在对不同的光刻胶层进行显影时，显影反应的时间长短有所不同，光刻胶掩模微结构的坚硬程度也有所不同，通过调节通入显影液的气体的流量与压力，以调节气泡的数量与大小，以此来适用于不同的光刻胶层进行显影，适用范围广。
需要说明的是，当光刻胶掩模的微结构较为脆弱时，应减少通入显影液的气泡数量，将气泡调整为较小尺寸，以避免损坏光刻胶掩模，影响显影的质量；当光刻胶层与显影液反应剧烈时，即反应时间较短时，应提高通入显影液的气泡数量，保证光刻胶层能够被显影液均匀包覆。
在一个实施例中，调节通入显影液的气体的流量与压力，以调节气泡的数量与大小，在显影过程中，实时调节气泡的尺寸大小以及气泡的数量，保证在充分搅拌显影液的情况下，避免显影液的冲击力过大而损坏光刻胶掩模的微结构。
在一个实施例中，将光刻胶层的曝光区完全浸没于容器内的显影液中之前， 还包括：
保持显影液的温度为目标温度，光刻胶层与显影液反应受温度的影响较大，保证显影过程中显影液的温度保持为目标温度，目标温度为显影工艺的最佳温度，避免影响显影速率。
具体地，最佳温度可以包含且不限于25℃。
在一个实施例中，还包括：光刻胶层从显影液中脱离后，去除残留在光刻胶层上的显影液，通过本实施方式，将光刻胶层从显影液中脱离后，去除残留在光刻胶层上的显影液，避免影响光刻胶层的显影效果。
具体地，去除光刻胶层上残留的显影液可以包含去离子水冲洗的方法，由液体控制装置107经过出液口123将容器113内的显影液排出，然后由液体控制装置107经过进液口112向容器113内加入去离子水，去离子水可以浸没大尺寸基板110，保持一段时间后将容器113内的去离子水排出，然后再次向容器113内加入去离子水。反复重复过程，将大尺寸基板110、卡具111和光刻胶层122上的残留显影液去除，进而完成显影。
在一个实施例中，在操作大尺寸基板110之前，首先需要将大尺寸基板110固定在卡具111上，形成基板组件101。
在一个实施例中，卡具111可以与大尺寸基板110的安装位进行装配而组成整体，基板在工艺设备之间的传递均通过搬运卡具来实现。
在一个实施例中，牵引装置102可以和卡具111连接，还可以在各工艺流程间运送大尺寸基板110。
在一个实施例中，以103示出了显影装置，由牵引装置102将大尺寸基板放入显影装置103中，大尺寸基板表面的光刻胶层在显影装置103中与显影液发生反应，一段时间后得到光刻胶掩模。
具体地，如图2所示，显影装置包括：容器113，用于容纳显影液；固定部117，用于固定卡具111使光刻胶层静止于显影液中；气泡发生器119，设置于容器113底部；以通过气泡发生器向显影液中通入气泡。
在一个实施例中，夹持部包括卡具111。
在一个实施例中，首先需要由液体控制装置107经过进液口112向容器113中加入足量显影液，随后，用测温装置114监测容器113内显影液的温度，并通过调温装置115将显影液调整至指定温度，调整包括动态的升温和降温。
在一个实施例中，如图2所示，当容器113内的显影液稳定在指定温度后，由牵引装置102拖动卡具111将大尺寸基板110放入容器113中。以虚线116示出了放入大尺寸基板110后，容器113内显影液的液面位置，大尺寸基板110浸没于显影液中，卡具111由容器113上的固定部117固定位置，在显影过程中使大尺寸基板110保持静止。
在一个实施例中，气体流量控制器118向气泡发生器119提供气体，气体可以包含且不限于氮气。
在一个实施例中，气泡发生器119产生气泡，气泡发生器119可以调节所产生气泡的尺寸大小。
在一个实施例中，气体流量控制器118可以调节进入气泡发生器119的气体流量，进入气泡发生器119的气体流量不同，则产生气泡的数量不同。
在一个实施例中，如图3所示，以120示出了大尺寸基板110表面光刻胶层的待显影区域，以虚线框121示出了气泡的上浮路径覆盖的区域，气泡上浮区域121完全覆盖了待显影区域120。
在一个实施例中，如图3所示，气泡上浮区域121设置于光刻胶层待显影区域120与显影液接触的一侧。
在一个实施例中，如图3所示，气泡发生器119置于容器113的底部，大尺寸基板110的底部高于气泡发生器119的位置，气泡发生器119产生的气泡在区域121内上浮。
在一个实施例中，光刻胶层122浸没于显影液一段时间后，可以由液体控制装置107经过出液口123将容器113内的显影液排出，然后由液体控制装置107经过进液口112向容器113内加入去离子水，去离子水可以浸没大尺寸基板110，保持一段时间后将容器113内的去离子水排出，然后再次向容器113内加入去离子水。反复重复过程，将大尺寸基板110、卡具111和光刻胶层122上的残留显影液去除，进而完成显影。
在一个实施例中，在本公开的另一个实施方案中，光刻胶层122浸没于显影液一段时间后，可以由液体控制装置107经过出液口123将容器113内的显影液排出，然后由液体控制装置107经过进液口112向容器113内加入去离子水，去离子水可以浸没大尺寸基板110，然后由气泡发生器119产生气泡来搅动去离子水，一段时间后将容器113内的去离子水排出，然后再次向容器113内加入去离子水，并通入气泡。反复重复过程，将大尺寸基板110、卡具111和光刻胶层122上的残留显影液去除，进而完成显影。
在一个实施例中，光刻胶层122浸没于显影液一段时间后，可以由牵引装置102拖动卡具111将大尺寸基板110从容器113内取出并放入清洗装置104，清洗装置104去除大尺寸基板110、卡具111和光刻胶层122上的残留显影液，进而完成显影。
本公开的光刻胶掩模的显影系统，包括上述显影装置103，还包括：
供气装置106，供气装置106可以包含且不限于气源、气路等，供气装置106可以向气泡发生器119提供气体，供气装置106还可以向本公开中其他需要气体的装置提供气体；
液体控制装置107，液体控制装置107可以包含且不限于储液罐、管路和阀门等，液体控制装置107可以向容器113加注液体，还可以排出容器113中的液体，液体控制装置107还可以向本公开中其它需要液体的装置加注液体，也可以排出本公开中其它需要排出液体的装置中的液体；
牵引装置102，牵引装置102可以搬运装载了大尺寸基板110的卡具111；
干燥装置105，干燥装置可以干燥光刻胶层、大尺寸基板110和卡具111；以及，计算机可读指令的计算机程序。
在一个实施例中，本系统还包括一种可以控制牵引装置、液体控制装置、供气装置、清洗装置和干燥装置的计算机设备108。
具体地，计算机设备包括：
存储器，存储器存储处理器可读指令109；
处理器，处理器被布置成用于读取并执行存储在存储器中的指令109。
在本公开的描述中，需要理解的是，术语“上”、“下”、“底”、“顶”、“前”、“后”、“内”、“外”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
虽然在本文中参照了特定的实施方式来描述本公开，但是应该理解的是，这些实施例仅仅是本公开的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本公开的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他实施例中。

Claims (13)

  1. 一种光刻胶掩模的显影方法，其特征在于，包括：
    将光刻胶层的曝光区完全浸没于容器内的显影液中；
    由所述光刻胶层的下方向所述显影液中通入气体并产生上浮的气泡；
    待所述光刻胶层的曝光区完全显影后，使所述光刻胶层从所述显影液中脱离。
  2. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，还包括：所述光刻胶层从所述显影液中脱离后，去除残留在所述光刻胶层上的所述显影液。
  3. 根据权利要求2所述的光刻胶掩模的显影方法，其特征在于，所述去除残留在所述光刻胶层上的所述显影液，包括：
    排空所述容器内的所述显影液，使所述光刻胶层从所述显影液中脱离之后，向所述容器内注入能够完全浸没所述光刻胶层的清洗液；
    向所述清洗液中通入气体并产生上浮的气泡；
    待所述光刻胶层上的所述显影液被完全去除后，排出所述容器内的所述清洗液。
  4. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，所述将光刻胶层的曝光区完全浸没于容器内的显影液中，包括：
    将所述光刻胶层设置于固定在夹持部的基板的表面上；
    移动所述夹持部至所述基板对应的所述光刻胶层的曝光区的部分浸没于所述显影液中。
  5. 根据权利要求4所述的光刻胶掩模的显影方法，其特征在于，所述基板保持竖直状态于所述显影液中。
  6. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，还包括：在目标时刻向所述显影液中通入气体。
  7. 根据权利要求6所述的光刻胶掩模的显影方法，其特征在于，所述目标时刻包括：
    所述光刻胶层曝光区与所述显影液接触前；或
    所述光刻胶层曝光区与所述显影液接触时；或
    所述光刻胶层曝光区完全浸没于所述显影液中时。
  8. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，所述上浮 的气泡在所述显影液中形成上浮扰动区域，所述光刻胶层的曝光区处于所述上浮扰动区域内。
  9. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，所述由所述光刻胶层的下方向所述显影液中通入气体并产生上浮的气泡中，还包括：
    调节通入所述显影液的气体的流量与压力，以调节所述气泡的数量与大小。
  10. 根据权利要求1所述的光刻胶掩模的显影方法，其特征在于，所述将光刻胶层的曝光区完全浸没于容器内的显影液中之前，还包括：
    保持所述显影液的温度为目标温度。
  11. 一种光刻胶掩模的显影装置，其特征在于，包括：
    容器，用于容纳显影液；
    夹持部，用于固定光刻胶层静止于所述显影液中；
    气泡发生器，设置于所述容器底部；
    所述气泡发生器向所述显影液中通入气泡。
  12. 一种光刻胶掩模的显影系统，其特征在于，包括：
    显影装置，用于光刻胶层的曝光区显影；
    供气装置，向气泡发生器提供气源；
    液体控制装置，控制容器内液体的体积；
    牵引装置，用于移动夹持部；
    控温装置，实时监测并调节所述容器内液体的温度。
  13. 一种存储介质，其特征在于，包括：可读存储介质和计算机指令，所述计算机指令存储在所述可读存储介质中；所述计算机指令用于实现权利要求1至10任一项所述的光刻胶掩模的显影方法。
PCT/CN2022/134220 2021-12-16 2022-11-25 一种光刻胶掩模的显影方法、装置、系统及储存介质 WO2023109470A1 (zh)

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