WO2023089774A1 - ドライバ集積iq光変調器 - Google Patents
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- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 12
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
Definitions
- the present disclosure relates to an ultra-high-speed IQ optical modulator that IQ-modulates an optical signal with an electrical signal.
- MZ Mach-Zehnder interferometer
- MZM Mach-Zehnder interferometer
- Polarization multiplexing type IQ optical modulators which are becoming popular in communication networks, have so-called nested MZ optical waveguides in which each arm waveguide of a parent MZM is composed of child MZMs. It is composed of MZMs (Quad-parallel MZMs) having a total of four child MZMs, two of which are provided in parallel corresponding to wave channels. Two arms of each child MZM are provided with traveling wave electrodes to which RF (Radio Frequency) modulated electric signals for modulating optical signals propagating in the optical waveguide are input. In each polarization channel, one such pair of child MZMs corresponds to the I channel and the other to the Q channel.
- RF Radio Frequency
- polarization multiplexed IQ optical modulator an electro-optical effect is generated by inputting an RF modulated electric signal to one end of a modulation electrode provided along the arm waveguide of the child MZM, and phase modulation is applied to the two optical signals propagating through the .
- Patent document 2 A polarization multiplexing type IQ optical modulator is one of IQ optical modulators, but the optical signals used in the IQ optical modulator are not limited to two polarized optical signals, and a single polarized optical signal is used. things are also known. For single polarization, one nested MZM is constructed.
- Non-Patent Document 1 High Bandwidth Coherent Driver Modulator (HB-CDM) aiming at miniaturization is accelerating.
- the modulator since the modulator is integrated with a differential drive driver, it is desirable that the modulator itself also be based on differential drive.
- Non-Patent Document 1 Non-Patent Document 2
- the configurations such as GSSG and GSGSG have a GND (Ground) line arranged in the vicinity of the signal line, which is a very desirable structure as a differential line configuration, and is the most desirable configuration from the viewpoint of suppression of crosstalk between channels. I can say there is.
- GND Ground
- GND line pattern (GND pattern) with a wider width than the Signal line is required. becomes.
- the GND pattern is between channels, it becomes impossible to arrange metal patterns that constitute lines other than the GND line.
- it is a differential line, it is necessary to arrange the ground symmetrically with respect to the signal line, and if a differential line configuration including a ground such as GSSG or GSGSG is used, the wiring layout on the IQ modulator is very limited. , and the size of the IQ modulator itself becomes large.
- the differential high-frequency line has an SS line configuration consisting only of a signal line without a ground. Since this SS line configuration has no ground, the degree of layout freedom is very high.
- the differential driver IC mounted inside the HB-CDM generally has a GSSG or GSGSG configuration interface. If the object to be connected to such a driver IC is an IQ modulator with an SS line layout, a certain Ground cannot be connected to the driver IC side, and only Signal is connected. There was a problem of deterioration of
- the high-frequency line has a differential line configuration of GSSG or GSGSG. becomes large.
- the present disclosure has been made in view of such problems, without deterioration of crosstalk characteristics, converts the differential line configuration to SS line, miniaturizes/integrates an IQ modulator configured using a semiconductor, and , an efficient connection with a differential driver and a good high-frequency connection.
- one embodiment of the present invention provides a driver integrated IQ optical modulator comprising at least two or more Mach-Zehnder modulators and an IQ modulator connected to the IQ modulator. and a differential driver IC, each of the at least two or more Mach-Zehnder modulators has a differential transmission line, and the differential waveguide has two signal lines for transmitting a high-frequency modulated signal including a differential signal.
- the differential transmission line includes a PAD section, a lead-out line section, a phase modulation section, and a termination section for connection with other elements, the other elements include the differential driver IC, and the PAD section is composed of GSSG A set of four first metal PADs with a configuration, or a set of five first metal PADs with a GSGSG configuration, where G is Grand, S is Signal, and includes a lead-out line section, a phase modulation section, and a termination The section has an SS line configuration.
- the IQ modulator in which an SS line configuration-based IQ modulator and a driver IC are connected, the IQ modulator is miniaturized while the driver IC and smooth connection can be realized. It is possible to improve the high frequency characteristics in a simple SS line configuration.
- FIG. 1 is a diagram showing an outline of the layout of an IQ modulator.
- FIG. 2 is a diagram illustrating a schematic layout of an IQ modulator according to an embodiment of the present disclosure; 3A and 3B are diagrams for explaining the connection between the driver IC and the IQ modulator, FIG. FIG. 2C is a diagram schematically showing a wire viewed from 1, and (c) is a diagram schematically showing a cross-sectional structure of a PAD portion of an IQ modulator.
- a driver-integrated IQ optical modulator according to an embodiment of the present disclosure will be described below with reference to the drawings. Identical or similar reference numerals indicate identical or similar elements, and repeated descriptions may be omitted.
- the driver-integrated IQ optical modulator described below is a device in which a differential driver IC and an IQ modulator are integrated in one package.
- a driver integrated IQ optical modulator of the present disclosure comprises an IQ modulator and a differential driver IC coupled with the IQ modulator.
- the IQ modulator includes at least two Mach-Zehnder modulators. Each Mach-Zehnder modulator comprises a differential transmission line.
- a differential waveguide comprises two signal lines for transmitting a high frequency modulated signal containing a differential signal.
- the high frequency modulation signal is indicated as Signal or S, and the ground potential is Ground and GND. Or it may be displayed as G.
- the differential transmission line includes a PAD section for connection with other elements, an extraction line section, a phase modulation section, and a terminating resistor.
- Other components may include differential driver ICs.
- the PAD section may include a set of 4 metal PADs with a GSSG configuration or a set of 5 metal PADs with a GSGSG configuration.
- FIG. 1 is a diagram showing a schematic layout of an IQ modulator 100 having an SS line configuration including two signal lines.
- the IQ modulator 100 shown in FIG. 1 has a so-called nested MZ optical waveguide in which each arm of a parent MZM is composed of child MZMs. If two IQ modulators 100 shown in FIG. 1 are used in parallel to correspond to the X polarization channel and the Y polarization channel, an MZM (Quad-parallel MZM) having a total of four child MZMs can be configured. .
- the IQ modulator 100 of FIG. 1 is shown corresponding to an X polarization channel. Light input to the IQ modulator 100 from the x-axis direction in the center of FIG. Each of the two parent arm waveguides consists of a child MZM.
- the child MZM has a demultiplexer 103 that splits the input light into two arm waveguides 104 .
- Two arm waveguides 104 of each child MZM are provided with traveling wave electrodes 105 to which RF modulation signals for modulating optical signals propagating in the optical waveguides are input.
- traveling wave electrode 105 has PAD section 106 , lead section 107 , phase modulation electrode section 108 , and terminal section 109 . It consists of a pair of two S lines. In other words, the PAD section 106, lead section 107, phase modulation electrode section 108, and termination section 109 all have the SS line configuration.
- the terminal portion 109 is formed by linearly arranging a tapered connection pad 110 followed by a terminal resistor 111 consisting of a rectangular resistor.
- the layout of the IQ modulator 100 shown in FIG. 1 simply shows only the periphery of the traveling wave electrode 105, and the two arm waveguides 104 of the child MZM are connected to the lower part of the terminal portion 109.
- a multiplexer such as an MMI (not shown) is arranged.
- the configuration of the traveling wave electrode 105 is an SS line configuration that does not include a ground line, so that the phase adjustment electrode is arranged in the region between the two child Mach-Zehnder modulators.
- the size of the IQ modulator 100 is reduced and integrated. If the overall configuration of the traveling wave electrode 105 is a GSSG configuration or a GSGSG configuration including two S lines and two or three G lines, then a phase adjustment electrode is provided between the two child Mach-Zehnder modulators. Otherwise, an additional area is required for arranging the G line, which leads to an increase in the size of the IQ modulator 100 .
- FIG. 2 is a schematic diagram of the layout of the IQ modulator 200 of the present disclosure.
- the configuration is the same as the conventional configuration shown in FIG. 1 except for the PAD portion 106 of the traveling wave electrode.
- Only the PAD section 106 which is most important from the viewpoint of connection of high-frequency characteristics with a driver IC (not shown), has a GSSG structure (four metal pads). If the size of the GND metal PAD (that is, the GND PAD) of the PAD section 106 is made too large, the size of the IQ modulator 200 will be increased. . Therefore, the size of the GND PAD does not necessarily have to be the same size as the Signal PAD.
- the GND PAD if one wire can be connected, there is no problem with the high frequency characteristics.
- a PAD section with a GSSG configuration is shown, but another GND PAD may be provided between two Signal PADs to form a PAD section with a GSGSG configuration.
- another GND PAD may be provided between two Signal PADs to form a PAD section with a GSGSG configuration.
- the waveguide may be damaged when wires are connected by wire bonding.
- phase adjustment electrodes in the phase adjustment units of the two child Mach-Zehnder modulators in the IQ modulator 200 shown in FIG. 2 are electrodes with a capacitance addition structure.
- This configuration is well known as a low-loss RF line configuration that can be designed to achieve both impedance matching and speed matching, and is very useful as a layout for modulators operating at high speed.
- the impedance of the phase adjustment unit in the IQ modulator 200 is higher than the impedance of the termination resistor 111 of the termination unit 109 by 3% or more (the impedance of the termination resistor 111 of the termination unit 109 is lower). . This is because, when connected to the driver IC, if the impedance of the terminating section 109 is higher than the impedance of the phase adjusting section, the frequency characteristics will become depressed in the low frequency portion. If the above design rule can be observed, it is possible to suppress the drop in the frequency characteristics in the low-frequency portion and to realize flat frequency characteristics in the vicinity of the low frequencies.
- the inductivity (L-characteristic) of the wire and the capacitive (C-characteristic) of the Signal PAD be small. Therefore, in order to realize a modulator with a wider IQ, it is necessary to reduce the inductance of the wire and the capacitance of the Signal PAD. It is desirable that the Signal PAD portion is not formed directly on the semiconductor substrate, for example, but is provided on a low dielectric material such as BCB provided on the semiconductor substrate. By doing so, it is possible to separate the PAD from the semiconductor substrate, which causes a high dielectric constant and an increase in capacitiveness, and it is possible to realize a low-capacity PAD.
- the Signal PAD in order to reduce the capacitiveness, it is considered desirable to reduce the size of the Signal PAD, but if the Signal PAD size is made too small, only one ball wire can be connected, Although the C property of the Signal PAD has decreased, the L property of the wire has increased, resulting in deterioration of the high frequency characteristics. Therefore, it is desirable that the Signal PAD be configured so that the ball wires are connected so that the wire paths when viewed from the top are always two different paths. Of course, if the wires are connected in three different paths when viewed from above, the L property can be further reduced, but the C property of the Signal PAD will increase, leading to deterioration of the characteristics.
- the wire is pulled up from the IQ modulator 200 side toward the driver IC side, the length of the wire can be minimized. Implemented is desirable.
- the IQ modulator 200 of the present disclosure has an SS line configuration, and the traveling wave electrode 105 to which the RF modulated electrical signal is input does not have a predetermined RF-GND (for example, 0 volt ground). not connected to potential). Therefore, it is desirable to supply RF-GND from the outside by connecting the metal PAD associated with GND among the metal pads of the GSSG structure or the GSGSG structure to the external ground potential. For that purpose, wire bonding as shown in FIG. 3A is effective.
- RF-GND for example, 0 volt ground
- all GNDs are covered with a loop wire so as to cover the Signal PAD (for example, the wire connecting between the Signal PAD is surrounded by a loop wire), and the outermost circumference (for example, closest to the circumference of the IQ optical modulator) Connect only the GND PAD to the RF-GND inside the stable package outside the IQ modulator 200 . Since the Signal PAD is covered with the wire connecting the GND PAD in this way, it is also very useful for suppressing crosstalk. Similarly, on the driver IC side, providing a looped wire connecting between the GND pads so as to cover the signal pads leads to further suppression of crosstalk characteristics.
- FIG. 3(a) is a diagram schematically showing wires when the connecting portion between the driver IC 300 and the IQ modulator 200 is viewed from above.
- FIG. 3A schematically shows only the driver IC 300 and the PAD section of the IQ modulator 200.
- the driver IC 300 has a GSGSG PAD and the IQ modulator 200 has a GSSG PAD, but the driver IC 300 may have a GSSG PAD.
- the driver IC 300 has a PAD of GSSG configuration, it is not desirable for the PAD of the IQ modulator 200 to have a GSGSG configuration.
- the GSGSG-configured metal PAD of the driver IC is connected to the GSSG-configured metal PAD of the corresponding modulator by a wire.
- the GND pads of the GSGSG structure of the driver IC are connected by wires
- the GND pads of the GSSG structure of the modulator are connected by wires.
- the wire connecting the signal pad of the GSGSG configuration of the driver IC and the signal pad of the GSSG configuration of the modulator is surrounded by the loop formed by the connecting wire between the GND pads.
- a set of four wires is used to connect one Signal PAD of the GSGSG configuration of the driver IC 300 and one Signal PAD of the GSSG configuration of the IQ modulator 200 .
- the path of the pair of the first and second wires in the set of four wires is shown by one line, and the path of the third and fourth wires is shown by one line.
- a pair of paths is indicated by another line.
- the paths of the first and second wire pairs appear to overlap substantially equally in top view, and the paths of the third and fourth wire pairs appear to overlap substantially equally in top view.
- the paths of the first and third wire pairs are different in top view.
- FIG. 3(b) is a diagram schematically showing the wire seen from the side of the connecting portion between the driver IC 300 and the IQ modulator 200.
- FIG. 3B the PAD section of the driver IC 300 is mounted at a position higher than the position where the PAD section 106 of the IQ modulator 200 is formed.
- FIG. 3(b) of the set of four wires used to connect one Signal PAD in the GSGSG configuration of the driver IC 300 and one Signal PAD in the GSSG configuration of the IQ modulator 200, Different paths for the first and second pair of wires (or third and fourth pair of wires) are indicated by two lines.
- FIG. 3(b) Different paths for the first and second pair of wires (or third and fourth pair of wires) are indicated by two lines.
- the wires connecting the GND pads of the GSGSG structure of the driver IC 300 and the GSSG structure of the IQ modulator 200 are omitted.
- the first wire (or the third wire) is a wire pulled upward (z-axis direction) after joining a ball formed by melting the tip of the wire onto one Signal PAD of the GSSG configuration of the modulator A ball formed by melting the other end of the is joined to the Signal PAD of the GSGSG structure of the driver IC to wire.
- the second wire (or fourth wire) is formed by melting the tip of the wire and overlapping the ball of the first wire bonded to one Signal PAD of the GSSG configuration of the IQ modulator 200.
- a ball formed by melting the other end of the wire pulled upward (in the z-axis direction) is overlapped and bonded onto the ball of the first wire bonded to the Signal PAD of the GSGSG configuration of the driver IC 300.
- wiring is performed.
- the length of the second wire (or fourth wire) is longer than the length of the first wire (or third wire). Therefore, the pair of the first wire and the second wire (or the pair of the third wire and the fourth wire) have different paths in side view.
- the pair of the first wire and the third wire (or the pair of the second wire and the fourth wire) appear to overlap each other with substantially equal paths in side view.
- FIG. 3(c) is a diagram schematically showing the cross-sectional structure of the PAD section 106 of the IQ modulator 200.
- the PAD section 106 of the IQ modulator 200 is formed on a BCB layer 303 formed of BCB, which is a low dielectric material, on a semiconductor substrate 301 .
- BCB is an example of a low dielectric material, and materials other than BCB may be used to form the low dielectric layer.
- the two arm waveguides 104 of the child MZM formed on the semiconductor substrate 30 1 are embedded in the BCB layer 303 .
- the Signal PAD and GND PAD in the GSSG configuration or GSGSG configuration are arranged at positions that do not overlap the arm waveguide 104 .
- the electromagnetic field distribution tends to spread in the wire, which is the high-frequency connection part, and it is likely to cause deterioration of high-frequency characteristics such as deterioration of crosstalk and increase of high-frequency loss.
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Abstract
Description
また、偏波多重型のIQ光変調器はIQ光変調器の一つであるが、IQ光変調器としては用いる光信号が2つの偏波光信号に限らず、単一の偏波光信号を用いたものも知られている。単一偏波の場合は、入れ子構造MZMが1つで構成される。
Claims (8)
- ドライバ集積IQ光変調器であって、
少なくとも2つ以上のマッハツェンダ変調器を含むIQ変調器と、
前記IQ変調器と接続される差動ドライバICと
を備え、
前記少なくとも2つ以上のマッハツェンダ変調器の各々は、差動伝送線路を備え、
前記差動伝送線路は、差動信号を含む高周波変調信号を伝送するための2つの信号線を備え、
前記差動伝送線路は、他素子との接続のためのPAD部、引出線路部、位相変調部、および終端部を備え、前記他素子は前記差動ドライバICを含み、
前記PAD部は、GSSG構成を有する4つの第1のメタルPADのセット、またはGSGSG構成を有する5つの第1のメタルPADのセットを含み、GはGrand、SはSignalであり、
前記引出線路部、前記位相変調部、および前記終端部は、SS線路構成を有する、
ドライバ集積IQ光変調器。 - 前記差動ドライバICは、GSSG構成を有する4つの第2のメタルPADのセットまたはGSGSG構成を有する5つの第2のメタルPADのセットを備え、
前記4つの第2のメタルPADのセットまたは前記5つの第2のメタルPADのセットは、対応する前記4つの第1のメタルPADのセットまたは前記5つの第1のメタルPADのセットと、ワイヤで接続されている、
請求項1に記載のドライバ集積IQ光変調器。 - 前記差動ドライバICに備えられた前記第2のメタルPADと前記IQ変調器に備えられた前記第1のメタルPADとを接続するワイヤが、ボールボンディングで構成されており、
前記GSSG構成または前記GSGSG構成のうちのSignalに関連した前記第1のメタルPADと前記第2のメタルPADとの間の各々が、4つのワイヤのセットで接続され、
前記4つのワイヤのセットのうちの第1のワイヤおよび第2のワイヤのペアは、上面視における経路が略等しく、側面視における経路が異なり、
前記4つのワイヤのセットのうちの第3のワイヤおよび第4のワイヤのペアは、上面視における経路が略等しく、側面視における経路が異なり、
前記4つのワイヤのセットのうちの前記第1のワイヤおよび第3のワイヤのペアは、上面視における経路が異なり、側面視における経路が略等しい、
請求項2に記載のドライバ集積IQ光変調器。 - 前記差動ドライバICに備えられた前記第2のメタルPADのセットまたは前記IQ変調器に備えられた前記第1のメタルPADのセットの少なくとも一方において、
前記GSSG構成または前記GSGSG構成のうちのGroundに関連した前記第1のメタルPADの間または前記第2のメタルPADの間がワイヤで接続されており、
前記Groundに関連した前記第1のメタルPADの間または前記第2のメタルPADの間を接続するワイヤは、前記GSSG構成または前記GSGSG構成のうちのSignalに関連した前記第1のメタルPADと前記第2のメタルPADとの間を接続するワイヤを囲むように構成されている、
請求項2または3に記載のドライバ集積IQ光変調器。 - 前記IQ変調器に備えられた前記GSSG構成を有する前記第1のメタルPADのセットまたは前記GSGSG構成を有する前記第1のメタルPADのセットのうち、前記IQ変調器の外周に最も近いGroundに関連した前記第1のメタルPADが外部の接地電位に接続されている、
請求項2から4のいずれか一項に記載のドライバ集積IQ光変調器。 - 前記少なくとも2つ以上のマッハツェンダ変調器の各々は、位相調整電極部をさらに備え、前記位相調整電極部は容量装加構造を有し、前記容量装加構造のインピーダンスは前記終端部に備えられた終端抵抗のインピーダンスよりも3%以上高い、
請求項1から5のいずれか一項に記載のドライバ集積IQ光変調器。 - 前記差動ドライバICに備えられた前記第2のメタルPADのセットが、前記IQ変調器に備えられた前記第1のメタルPADのセットよりも高い位置に実装されている、
請求項2から5のいずれか一項に記載のドライバ集積IQ光変調器。 - 前記マッハツェンダ変調器は、半導体基板と、前記半導体基板上に形成された導波路構造と、前記半導体基板上に前記導波路構造を埋め込むように低誘電体材料を用いて形成された層とを備え、
前記第1のメタルPADのセットは、前記低誘電体材料を用いて形成された層の上に形成されている、
請求項1から7のいずれか一項に記載のドライバ集積IQ光変調器。
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