WO2023087824A1 - 抗干扰磁场传感器 - Google Patents

抗干扰磁场传感器 Download PDF

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Publication number
WO2023087824A1
WO2023087824A1 PCT/CN2022/114257 CN2022114257W WO2023087824A1 WO 2023087824 A1 WO2023087824 A1 WO 2023087824A1 CN 2022114257 W CN2022114257 W CN 2022114257W WO 2023087824 A1 WO2023087824 A1 WO 2023087824A1
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tip
magnetic field
field sensor
unit
uniform
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PCT/CN2022/114257
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English (en)
French (fr)
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郭慧芳
张水华
倪佳乐
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上海矽睿科技股份有限公司
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Publication of WO2023087824A1 publication Critical patent/WO2023087824A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/025—Compensating stray fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present application relates to the technical field of magnetic field sensors, in particular to an anti-interference magnetic field sensor.
  • Anisotropic magnetoresistive sensor is a new type of sensor based on the magnetoresistance effect, which has the advantages of miniaturization, low noise, high resolution, low power consumption, and easy integration.
  • the magnetoresistive unit is usually made of permalloy thin film deposited on the silicon wafer, and the measurement of the magnetic field is realized by using the Wheatstone bridge to detect the change of the magnetoresistance, but the limitation of the process technology and the configuration problem of the Wheatstone bridge often make the sensor A bridge bias problem occurs after leaving the factory.
  • the zero offset problem caused by the bridge itself and external changes can be constantly offset by setting the set and reset coils.
  • the specific method is to inject current into the set and reset coils to excite the magnetic domains on the magnetoresistive unit to align with the direction of the easy magnetization axis, and to add the output of the set and reset to offset the zero bias of the bridge at all times.
  • the effect of setting and resetting will be greatly reduced due to the complex external magnetic field environment.
  • the two ends of the magnetoresistive unit are most likely to be affected.
  • the main reason is that the surface magnetic field of the magnetoresistive unit after being excited has "small at both ends and large in the middle". Distribution trend, too small magnetic field at both ends leads to rapid demagnetization at both ends of the magnetoresistive unit, which will affect the measurement accuracy of the magnetic field sensor to a certain extent.
  • An embodiment of the present application provides an anti-interference magnetic field sensor, the anti-interference magnetic field sensor includes:
  • the set reset coil, the set reset coil includes a plurality of wires parallel to each other, and the widths of the multiple wires are the same;
  • At least one reluctance unit the reluctance unit is arranged above or below the set reset coil, the reluctance unit has an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, the reluctance The extension direction of the unit is parallel to the easy axis of magnetization;
  • the magnetic resistance unit includes a first pointed portion, a second pointed portion and a uniform portion, the first pointed portion and the second pointed portion are respectively arranged on both sides of the uniform portion, and the first pointed
  • the width of the second pointed portion gradually increases in a direction approaching the uniform portion, and the width of the second pointed portion gradually increases in a direction approaching the uniform portion.
  • the widths of the first tip portion and the second tip portion of the magnetoresistive unit gradually increase in width along the direction of the easy axis of magnetization and approach the uniform portion until they are equal to the width of the uniform portion , the uniform portion has the same width in the direction of the easy axis of magnetization.
  • the length of the first tip is greater than or equal to 10% of the length of the magnetoresistive unit
  • the length of the second tip is greater than or equal to 10% of the length of the magnetoresistive unit.
  • the longer the lengths of the first tip and the second tip are, the larger the surface magnetic fields of the first tip and the second tip are.
  • the directions of the currents passing through the multiple wires are the same, and the magnitudes of the currents are the same.
  • the tip angle of the first tip part is less than or equal to 20°; the tip angle of the second tip part is less than or equal to 20°.
  • the direction of the current passing through the plurality of wires is parallel to the magnetic sensitivity axis.
  • first pointed portion and the second pointed portion are arranged on opposite sides of the uniform portion along the direction of the easy axis of magnetization, and the first pointed portion and the second pointed portion The tip portion is axisymmetric along the magnetically sensitive axis.
  • the magnetoresistive unit has a uniform thickness.
  • the magnetoresistive unit is made of permalloy.
  • the anti-jamming magnetic field sensor includes: a set-reset coil, the set-reset coil includes a plurality of wires parallel to each other, and the widths of the multiple wires are the same; at least one A reluctance unit, the reluctance unit is arranged above or below the set reset coil, the reluctance unit has an easy magnetization axis and a magnetic sensitive axis perpendicular to the easy magnetization axis, the reluctance unit The extension direction is parallel to the magnetization easy axis; wherein, the magnetoresistive unit includes a first pointed portion, a second pointed portion and a uniform portion, and the first pointed portion and the second pointed portion are respectively arranged on the uniform The width of the first pointed portion gradually increases in the direction close to the uniform portion, and the width of the second pointed portion gradually increases in the direction close to the uniform portion; solve the problem of the prior art The magnetic field at both ends of the magnetoresistive unit of the
  • Fig. 1 is the structural representation of the anti-interference magnetic field sensor in an embodiment of the present application
  • FIG. 2 is a schematic structural view of an anti-interference magnetic field sensor in another embodiment of the present application.
  • Fig. 3 is a schematic structural view of the magnetoresistive unit in the embodiment shown in Fig. 2;
  • Fig. 4 is a schematic diagram of the magnetic field distribution of the magnetoresistive unit in the embodiment shown in Fig. 1 under the current excitation of the set and reset coil:
  • Fig. 5 is a schematic diagram of the magnetic field distribution of the magnetoresistive unit in the embodiment shown in Fig. 2 under the current excitation of the set and reset coils.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined.
  • a first feature being "on” or “under” a second feature may mean that the first and second features are in direct contact, or that the first and second features are indirect through an intermediary. touch.
  • “above”, “above” and “above” the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • “Below”, “beneath” and “beneath” the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
  • an embodiment of the present application provides an anti-interference magnetic field sensor
  • the anti-interference magnetic field sensor includes: a reset coil 100 and at least one magnetoresistive unit 200 .
  • the set and reset coil 100 includes a plurality of parallel wires 110 , and the widths of the multiple parallel wires 110 are the same.
  • the set and reset coil 100 is used to generate excitation current to unify the magnetization direction of the surface of the magnetoresistive unit 200 .
  • the magnetoresistance unit 200 has a magnetic sensitivity axis 201 and an easy magnetization axis 202 , the extension direction of the magnetoresistance unit 200 is parallel to the magnetization easy axis 202 , and the magnetoresistance unit 200 is disposed above or below the set and reset coil 100 .
  • the multiple wires 110 in the set and reset coil 100 are parallel to each other, and the multiple wires 110 are arranged along the magnetization easy axis 202 , and each wire 110 is parallel to the magnetic sensitivity axis 201 . As shown in FIG.
  • the magnetically sensitive axis 201 is the axis extending in the up and down direction of the magnetoresistive unit 200
  • the easy magnetization axis 202 is the axis extending in the left and right direction of the magnetoresistive unit 200 . direction arrangement.
  • the excitation makes the magnetic domain on the magnetoresistive unit 200 align with the direction of the easy magnetization axis 202, and the zero bias of the bridge can be canceled by adding the output of the set and reset to eliminate the external Effect of magnetic field on magnetic field sensor.
  • the shape and size of the magnetoresistive unit 200 determine the magnetic field strength at both ends of the magnetoresistive unit 200, and the magnetoresistive unit 200 is usually made of permalloy thin film deposited on a silicon wafer, the magnetoresistive unit 200 It can be regarded as a strip-shaped sheet with a very thin thickness, so when discussing the shape and size of the magnetoresistive unit 200, only the length and width of the magnetoresistive unit 200 need to be considered.
  • the magnetoresistive unit 200 includes a first tip portion 210, a second tip portion 230 and a uniform portion 220, the first tip portion 210 and the second tip portion 230 are respectively arranged on both sides of the uniform portion 220, the first tip The width of the portion 210 gradually increases in a direction approaching the uniform portion 220 , and the width of the second tip portion 230 gradually increases in a direction approaching the uniform portion 220 .
  • the width of the first tip portion 210 refers to the width of the first tip portion 210 in the direction of the magnetically sensitive axis 201, and the length of the first tip portion 210 refers to the length of the first tip portion 210 in the direction of the easy magnetization axis 202;
  • the width of the tip portion 230 refers to the width of the second tip portion 230 in the direction of the magnetically sensitive axis 201, and the length of the second tip portion 230 refers to the length of the second tip portion 230 in the direction of the easy magnetization axis 202;
  • the uniform portion 220 The width refers to the width of the uniform portion 220 in the direction of the magnetically sensitive axis 201 , and the length of the uniform portion 220 refers to the length of the uniform portion 220 in the direction of the easy magnetization axis 202 .
  • the width of the first tip 210 and the second tip 230 refers to the size of the first tip 210 and the second tip 230 in the up-down direction (magnetic sensitive axis 201), the first tip 210 and the length of the second tip portion 230 refer to the dimensions of the first tip portion 210 and the second tip portion 230 in the left-right direction (axis of easy magnetization 202); the length of the uniform portion 220 refers to the size of the uniform portion 220 in the left-right direction ( The dimension on the easy magnetization axis 202 ), the width of the uniform portion 220 refers to the dimension on the vertical direction of the uniform portion 220 (magnetic sensitive axis 201 ).
  • the width of the first tip portion 210 gradually increases from left to right
  • the width of the second tip portion 230 gradually increases from right to left
  • the width of the uniform portion 220 remains constant from left to right, with a uniform width.
  • first tip portion 210 and the second tip portion 230 are disposed on opposite sides of the uniform portion 220 along the direction of the easy magnetization axis 202 , and the first tip portion 210 and the second tip portion 230 are axisymmetric along the magnetic sensitivity axis 201 .
  • the width of the first tip portion 210 and the second tip portion 230 of the magnetoresistive unit 200 increases gradually in the direction of the easy axis 202 along the direction close to the uniform portion 220 until the width of the uniform portion 220 is the same, and the uniform portion 220 is on the easy axis 202 The same width in both directions.
  • the first tip portion 210 has a first side 211 and a second side 212
  • the second tip portion 230 has a third side 231 and a fourth side 232 .
  • One end of the first side 211 and one end of the second side 212 are connected to form a tip, and the other end of the first side 211 and the other end of the second side 212 are connected to the uniform part 220 .
  • one end of the third side 231 of the second tip part 230 is connected to one end of the fourth side 232 of the second tip part 230 to form a tip, and the other end of the third side 231 and the other end of the fourth side 232 are connected to the uniform Section 220 is connected.
  • the lengths of the first tip portion 210 and the second tip portion 230 can also be understood as the distance from the tip to the uniform portion 220 in the direction of the easy magnetization axis 202 .
  • the longer the length of the first tip 210 and the second tip 230 the larger the surface magnetic field of the first tip 210 and the second tip 230 .
  • the length L of the first tip 210 is generally greater than or equal to 10% of the length S of the magnetoresistive unit 200
  • the length L of the second tip 230 is greater than or equal to 10% of the length S of the magnetoresistive unit 200 .
  • the length L of the first tip 210 is less than 10% of the length S of the magnetoresistive unit 200, and the length L of the second tip 230 is less than 10% of the length S of the magnetoresistive unit 200; in FIG. 2 Among them, the length L of the first tip 210 is greater than 10% of the length S of the magnetoresistive unit 200 , and the length L of the second tip 230 is greater than 10% of the length S of the magnetoresistive unit 200 .
  • Fig. 4 corresponds to the magnetic field distribution of the magnetoresistive unit 200 in Fig. 1 under the current excitation of the set reset coil 100
  • Fig. 5 corresponds to the magnetic field distribution of the magnetoresistive unit 200 in Fig.
  • the magnetic field strength of the first tip 210 and the second tip 230 can also be enhanced by setting the tip angles of the first tip 210 and the second tip 230, for example, the tip angle of the first tip 210 can be set to be less than or equal to 20°, the tip angle of the second tip portion 230 is less than or equal to 20° to enhance the magnetic field strength of the first tip portion 210 and the second tip portion 230 .
  • the tip angle is the angle between the sharp corners of the first tip portion 210 and the second tip portion 230 away from the uniform portion 220 , that is, the angle of the sharp corners at both ends of the magnetoresistive unit 200 .
  • the angle can be set according to actual needs, the smaller the angle, the stronger the magnetic field strength.
  • the length S of the magnetoresistive unit 200 is less than or equal to the total width of the set and reset coil 100 , that is, the magnetoresistive unit 200 is disposed within the width range of the set and reset coil 100 .
  • the magnetization effect of the excitation current on the magnetoresistive unit 200 makes the directions of the magnetic domains of the magnetoresistive unit 200 consistent;
  • the magnetoresistive unit 200 whose uniform part 220 has the same width can avoid the interference of the external magnetic field, improve the measurement accuracy of the magnetic field sensor, and eliminate the zero offset error between the magnetoresistive units 200 at the same time.
  • the magnetoresistive unit 200 can generally be a strip made of high magnetic permeability materials such as iron, cobalt, nickel, cobalt-iron-boron alloy or nickel-iron alloy, for example, permalloy deposited on a silicon wafer.
  • high magnetic permeability materials such as iron, cobalt, nickel, cobalt-iron-boron alloy or nickel-iron alloy, for example, permalloy deposited on a silicon wafer.
  • the magnetoresistive unit 200 is a long sheet with a relatively thin thickness, in order to obtain better results and improve the measurement accuracy of the magnetic field sensor, the thickness of the magnetoresistive unit 200 needs to be kept uniform, and the overall thickness should not have too much deviation.
  • applying a voltage to the input terminal and the output terminal of the set and reset coil 100 can form a set and reset current in the wire 110 of the set and reset coil 100 .
  • the magnitude and direction of the current flowing through the more than 100 wires 110 of the set and reset coils are the same.
  • the current direction of each wire 110 is parallel to the magnetically sensitive axis 201 of the magnetoresistive unit 200 .
  • the total length S of the magnetoresistive unit 200 is fixed, and the length L at both ends of the magnetoresistive unit 200 can be changed by changing the length L of the first pointed portion 210 and the second pointed portion 230 .
  • Magnetic field strength, the internal magnetic field strength can be increased through cutting-edge design and optimization of tip length, thereby reducing the interference of external magnetic fields.
  • Those skilled in the art can adjust the proportions of the first tip portion 210 , the uniform portion 220 and the second tip portion 230 according to actual usage requirements, and then adjust the magnetic field strength at both ends of the magnetoresistive unit 200 , which is not limited herein.
  • set reset coil 100 and the magnetoresistive unit 200 are not limited to one group.
  • one set reset coil 100 may correspond to one, two, or even multiple magnetoresistive units 200 It is also possible that multiple set and reset coils 100 correspond to multiple reluctance units 200, and the specific number can be adjusted according to actual needs, which is not limited in this application.
  • the magnetoresistive unit 200 may be an anisotropic magnetoresistive unit, a giant magnetoresistive unit or a tunneling magnetoresistive unit.
  • the application provides an anti-jamming magnetic field sensor, the anti-jamming magnetic field sensor includes: a set reset coil, the set reset coil includes a plurality of wires parallel to each other, and the wires of the multiple wires The same width; at least one magnetoresistance unit, the magnetoresistance unit is arranged above or below the set reset coil, the magnetoresistance unit has an easy magnetization axis and a magnetic sensitive axis perpendicular to the easy magnetization axis, so The extension direction of the magnetoresistive unit is parallel to the easy magnetization axis; wherein, the magnetoresistive unit includes a first tip, a second tip and a uniform part, and the first tip and the second tip are respectively It is arranged on both sides of the uniform part, the width of the first tip gradually increases in the direction close to the uniform part, and the width of the second tip gradually increases in the direction close to the uniform part; It solves the technical problem that the magnetic field at both ends of the magnetic resistance unit of the magnetic field sensor is too small
  • the magnetic field strength at both ends of the magnetoresistive unit can be further increased, effectively reducing the interference of the external magnetic field on the magnetoresistive sensor, and improving the detection accuracy of the magnetic field sensor.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

一种抗干扰磁场传感器，包括：置位复位线圈（100），该置位复位线圈（100）包括多根相互平行的导线(110)，且该多根导线（110）的宽度相同；至少一个磁阻单元（200），该磁阻单元（200）设置于置位复位线圈（100）上方或下方，该磁阻单元（200）具有易磁化轴（202）和与易磁化轴（202）相垂直的磁敏感轴（201），该磁阻单元（200）的延伸方向与易磁化轴（202）平行。增加了磁阻单元（200）被激励后两端的磁场强度，有效降低外界磁场对磁阻传感器的干扰，提高在复杂环境中磁场传感器的检测精度。

Description

抗干扰磁场传感器 技术领域
本申请涉及磁场传感器技术领域，特别涉及一种抗干扰磁场传感器。
背景技术
各向异性磁阻传感器是基于磁阻效应的新型传感器，具有微型化、低噪声、高分辨率、低功耗、易集成等优点。磁阻单元通常由沉积在硅片上的坡莫合金薄膜制成，利用惠斯通电桥检测磁阻的变化来实现磁场的测量，但工艺技术的限制和惠斯通电桥的配置问题常常使传感器在出厂后出现电桥偏置问题。
在现有技术中，通过设置置位复位线圈可以进行时时抵消电桥本身以及外界变化带来的的零偏问题。具体做法是向置位复位线圈注入电流，激励使得磁阻单元上的磁畴对准易磁化轴方向，用置位和复位的输出相加即可时时抵消电桥的零偏。
然而，置位复位的效果会由于外界复杂的磁场环境大大折扣，以磁阻单元两端最容易受影响，主要原因是被激励后的磁阻单元表面磁场存在“两端小，中间大”的分布趋势，两端过小的磁场导致磁阻单元两端退磁很快，在一定程度上会影响磁场传感器的测量精度。
申请内容
基于此，有必要针对上述技术问题，提供一种能够消除外界磁场干扰的磁场传感器，提高磁场传感器的测量精度。
本申请一实施例提供一种抗干扰磁场传感器，所述抗干扰磁场传感器包括：
置位复位线圈，所述置位复位线圈包括多根相互平行的导线，且所述多根导线的宽度相同；
至少一个磁阻单元，所述磁阻单元设置于所述置位复位线圈上方或下方，所述磁阻单元具有易磁化轴和与所述易磁化轴相垂直的磁敏感轴，所述磁阻单元的延伸方向与所述易磁化轴平行；
其中，所述磁阻单元包括第一尖端部、第二尖端部和均匀部，所述第一尖端部和所述第二尖端部分别设置于所述均匀部的两侧，所述第一尖端部的宽度在靠近所述均匀部的方向上逐渐增加，所述第二尖端部的宽度在靠近所述均匀部的方向上逐渐增加。
在一种实施方式中，所述磁阻单元第一尖端部和第二尖端部的宽度在所述易磁化轴方向沿靠近所述均匀部方向上宽度逐渐增加，直至与所述均匀部宽度相同，所述均匀部在所述易磁化轴方向上的宽度相同。
在一种实施方式中，所述第一尖端部的长度大于或等于所述磁阻单元长度的10％；
所述第二尖端部的长度大于或等于所述磁阻单元长度的10％。
在一种实施方式中，所述第一尖端部和所述第二尖端部的长度越长，所述第一尖端部和所述第二尖端部表面磁场越大。
在一种实施方式中，所述多根导线上通过的电流方向相同,且电流大小相同。
在一种实施方式中，所述第一尖端部的尖端角度小于或等于20°；所述第二尖端部的尖端角度小于或等于20°。
在一种实施方式中，所述多根导线上通过的电流方向平行于所述磁敏感轴。
在一种实施方式中，所述第一尖端部与所述第二尖端部沿所述易磁化轴方向设置于所述均匀部的相对两侧，且所述第一尖端部与所述第二尖端部沿所述磁敏感轴轴对称。
在一种实施方式中，所述磁阻单元厚度均匀。
在一种实施方式中，所述磁阻单元由坡莫合金制成。
本申请提供的一种抗干扰磁场传感器，所述抗干扰磁场传感器包括：置位复位线圈，所述置位复位线圈包括多根相互平行的导线，且所述多根导线的宽度相同；至少一个磁阻单元，所述磁阻单元设置于所述置位复位线圈上方或下方，所述磁阻单元具有易磁化轴和与所述易磁化轴相垂直的磁敏感轴，所述磁阻单元的延伸方向与所述易磁化轴平行；其中，所述磁阻单元包括第一尖端部、第二尖端部和均匀部，所述第一尖端部和所述第二尖端部分别设置于所述均匀部的两侧，所述第一尖端部的宽度在靠近所述均匀部的方向上逐渐增加，所述第二尖端部的宽度在靠近所述均匀部的方向上逐渐增加；解决了现有技术中磁场传感器的磁阻单元两端磁场过小，退磁很快，从而影响磁场传感器测量精度的技术问题；增加了磁阻单元被激励后两端的磁场强度，有效降低外界磁场对磁阻传感器的干扰，提高在复杂环境中磁场传感器的检测精度。
附图说明
为了更清楚地说明本申请实施例或传统技术中的技术方案，下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一个实施例中抗干扰磁场传感器的结构示意图；
图2为本申请另一个实施例中抗干扰磁场传感器的结构示意图；
图3为图2所示实施例中磁阻单元的结构示意图；
图4为图1所示实施例中磁阻单元在置位复位线圈电流激励下的磁场分布示意图：
图5为图2所示实施例中磁阻单元在置位复位线圈电流激励下的磁场分 布示意图。
具体实施方式
为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图对本申请的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本申请。但是本申请能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本申请内涵的情况下做类似改进，因此本申请不受下面公开的具体实施例的限制。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
请参考图1，本申请一实施例提供一种抗干扰磁场传感器，该抗干扰磁场传感器包括：置位复位线圈100和至少一个磁阻单元200。
置位复位线圈100包括多根相互平行的导线110，且多根相互平行的导线110的宽度相同。置位复位线圈100用于产生激励电流，以统一磁阻单元200表面的磁化方向。
磁阻单元200具有磁敏感轴201和易磁化轴202，磁阻单元200的延伸方向与易磁化轴202平行，且磁阻单元200设置于置位复位线圈100上方或下方。在本申请实施例中，置位复位线圈100中的多根导线110相互平行，且多根导线110沿易磁化轴202排布，每根导线110均与磁敏感轴201平行。如图2所示，磁敏感轴201为磁阻单元200上下方向延伸的轴线，易磁化轴202为磁阻单元200左右方向延伸的轴线，多根宽度相同的导线110相互平行且沿图2左右方向排布。当向置位复位线圈100注入电流时，激励使得磁阻单元200上的磁畴对准易磁化轴202方向，用置位和复位的输出相加即可抵消电桥的零偏，以消除外界磁场对磁场传感器的影响。
在本申请实施例中，磁阻单元200的形状和尺寸决定了磁阻单元200两端的磁场强度，而磁阻单元200通常由沉积在硅片上的坡莫合金薄膜制成， 磁阻单元200可以看作是一个厚度很薄的长条形的薄片，那么在研究讨论磁阻单元200的形状和尺寸时，只需要考虑磁阻单元200的长度和宽度即可。
结合参考图3，磁阻单元200包括第一尖端部210、第二尖端部230和均匀部220，第一尖端部210和第二尖端部230分别设置于均匀部220的两侧，第一尖端部210的宽度在靠近均匀部220的方向上逐渐增加，第二尖端部230的宽度在靠近均匀部220的方向上逐渐增加。
第一尖端部210的宽度指的是第一尖端部210在磁敏感轴201方向的宽度，第一尖端部210的长度指的是第一尖端部210在易磁化轴202方向的长度；第二尖端部230的宽度指的是第二尖端部230在磁敏感轴201方向的宽度，第二尖端部230的长度指的是第二尖端部230在易磁化轴202方向的长度；均匀部220的宽度指的是均匀部220在磁敏感轴201方向的宽度，均匀部220的长度指的是均匀部220在易磁化轴202方向的长度。
如图3所示，第一尖端部210和第二尖端部230的宽度指的是第一尖端部210和第二尖端部230在上下方向(磁敏感轴201)上的尺寸，第一尖端部210和第二尖端部230的长度指的是第一尖端部210和第二尖端部230在左右方向(易磁化轴202)上的尺寸；均匀部220的长度指的是均匀部220左右方向(易磁化轴202)上的尺寸，均匀部220的宽度指的是均匀部220上下方向(磁敏感轴201)上的尺寸。在图3中，第一尖端部210的宽度从左向右逐渐增加，第二尖端部230的宽度从右向左逐渐增加，均匀部220的宽度从左向右不变，宽度一致。
进一步的，第一尖端部210与第二尖端部230沿易磁化轴202方向设置于均匀部220的相对两侧，且第一尖端部210与第二尖端部230沿磁敏感轴201轴对称。
磁阻单元200第一尖端部210和第二尖端部230的宽度在易磁化轴202方向沿靠近均匀部220方向上宽度逐渐增加，直至与均匀部220宽度相同，均匀部220在易磁化轴202方向上的宽度相同。
在一种实施方式中，结合参考图3，第一尖端部210具有第一边211和 第二边212，第二尖端部230具有第三边231和第四边232。第一边211的一端和第二边212的一端相连以形成尖端，第一边211的另一端和第二边212的另一端与均匀部220连接。同理，第二尖端部230的第三边231的一端和第二尖端部230的第四边232的一端相连以形成尖端，第三边231的另一端和第四边232的另一端与均匀部220连接。如此看来，第一尖端部210和第二尖端部230的长度也可以理解为尖端到均匀部220在易磁化轴202方向上的距离。
在本申请实施例中，根据磁化单元200的磁场分布特性可知，第一尖端部210和第二尖端部230的长度越长，第一尖端部210和第二尖端部230表面磁场越大。为了获得较好的效果，第一尖端部210的长度L通常大于或等于磁阻单元200长度S的10％，第二尖端部230的长度L大于或等于磁阻单元200长度S的10％。
举例来看，在图1中，第一尖端部210的长度L小于磁阻单元200长度S的10％，第二尖端部230的长度L小于磁阻单元200长度S的10％；在图2中，第一尖端部210的长度L大于磁阻单元200长度S的10％，第二尖端部230的长度L大于磁阻单元200长度S的10％。图4对应了图1中的磁阻单元200在置位复位线圈100电流激励下的磁场分布，而图5对应了图2中的磁阻单元200在置位复位线圈100电流激励下的磁场分布。对比图4和图5可知，图2中的磁阻单元200两端的磁场强度要大于图1中的磁阻单元200两端的磁场强度，那么对应使用了图2中的磁阻单元200的磁场传感器抗干扰能力更强，检测更加精准。另外，也可以通过设置第一尖端部210和第二尖端部230的尖端角度来增强第一尖端部210和第二尖端部230的磁场强度，例如可以设置第一尖端部210的尖端角度小于或等于20°，第二尖端部230的尖端角度小于或等于20°来增强第一尖端部210和第二尖端部230的磁场强度。在本申请实施例中，尖端角度为第一尖端部210和第二尖端部230远离均匀部220的尖角的角度，也就是磁阻单元200两端尖角的角度。该角度可根据实际需求进行设定，角度越小，磁场强度越强。
在本申请实施例中，磁阻单元200的长度S小于等于所述置位复位线圈100的总宽度，即磁阻单元200设置于置位复位线圈100的宽度范围内。如此，当置位复位线圈100产生激励电流时，利用该激励电流对磁阻单元200的磁化作用使得磁阻单元200的磁畴方向一致；并且，磁阻单元200在置位复位线圈100激励电流的磁化作用下，其均匀部220宽度一致的磁阻单元200可免受外部磁场的干扰，提高了磁场传感器的测量精度，同时又消除磁阻单元200之间的零偏误差。
此外，磁阻单元200通常可以是由铁、钴、镍、钴铁硼合金或镍铁合金等高导磁材料制成的长条薄片，例如由坡莫合金沉积在硅片上制成。虽然磁阻单元200为一长条薄片，其厚度较薄，但为了获得更好的效果，提高磁场传感器的测量精度，磁阻单元200的厚度需要保持均匀，整体厚度不能有太大的偏差。
在本申请实施例中，向置位复位线圈100的输入端和输出端施加电压可在置位复位线圈100的导线110中形成置位复位电流。流经置位复位线圈100多根导线110的电流大小和电流方向都相同。每根导线110的电流方向均平行于磁阻单元200的磁敏感轴201。
需要说明的一点是，在本申请实施例中，磁阻单元200的总长度S固定不变，可通过改变第一尖端部210和第二尖端部230的长度L来改变磁阻单元200两端的磁场强度，通过尖端化的设计以及尖端长度的优化可以提高其内部的磁场强度，进而减小外部磁场的干扰。本领域技术人员可根据实际的使用需求调整第一尖端部210、均匀部220和第二尖端部230所占的比例，进而调整磁阻单元200两端的磁场强度，本申请在此不做限定。
另外，置位复位线圈100和磁阻单元200不限于一组，在本申请提供的抗干扰磁场传感器中，可以是一个置位复位线圈100对应一个、两个、甚至是多个磁阻单元200；也可以是多个置位复位线圈100对应多个磁阻单元200，具体数量可根据实际需求进行调整，本申请在此不做限定。
磁阻单元200可以是各向异性磁阻单元、巨磁磁阻单元或隧穿磁阻单元。
综上所述，本申请提供的一种抗干扰磁场传感器，所述抗干扰磁场传感器包括：置位复位线圈，所述置位复位线圈包括多根相互平行的导线，且所述多根导线的宽度相同；至少一个磁阻单元，所述磁阻单元设置于所述置位复位线圈上方或下方，所述磁阻单元具有易磁化轴和与所述易磁化轴相垂直的磁敏感轴，所述磁阻单元的延伸方向与所述易磁化轴平行；其中，所述磁阻单元包括第一尖端部、第二尖端部和均匀部，所述第一尖端部和所述第二尖端部分别设置于所述均匀部的两侧，所述第一尖端部的宽度在靠近所述均匀部的方向上逐渐增加，所述第二尖端部的宽度在靠近所述均匀部的方向上逐渐增加；解决了现有技术中磁场传感器的磁阻单元两端磁场过小，退磁很快，从而影响磁场传感器测量精度的技术问题；增加了磁阻单元被激励后两端的磁场强度，有效降低外界磁场对磁阻传感器的干扰，提高在复杂环境中磁场传感器的检测精度。
此外，通过增加第一尖端部和第二尖端部所占磁场传感器总长的比例，可以进一步增加磁阻单元两端的磁场强度，有效降低外界磁场对磁阻传感器的干扰，提高磁场传感器的检测精度。
在本说明书的描述中，参考术语“有些实施例”、“其他实施例”、“理想实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特征包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性描述不一定指的是相同的实施例或示例。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围 应以所附权利要求为准。

Claims (10)

  1. 一种抗干扰磁场传感器，其特征在于，所述抗干扰磁场传感器包括：
    置位复位线圈，所述置位复位线圈包括多根相互平行的导线，且所述多根导线的宽度相同；
    至少一个磁阻单元，所述磁阻单元设置于所述置位复位线圈上方或下方，所述磁阻单元具有易磁化轴和与所述易磁化轴相垂直的磁敏感轴，所述磁阻单元的延伸方向与所述易磁化轴平行；
    其中，所述磁阻单元包括第一尖端部、第二尖端部和均匀部，所述第一尖端部和所述第二尖端部分别设置于所述均匀部的两侧，所述第一尖端部的宽度在靠近所述均匀部的方向上逐渐增加，所述第二尖端部的宽度在靠近所述均匀部的方向上逐渐增加。
  2. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述磁阻单元第一尖端部和第二尖端部的宽度在所述易磁化轴方向沿靠近所述均匀部方向上宽度逐渐增加，直至与所述均匀部宽度相同，所述均匀部在所述易磁化轴方向上的宽度相同。
  3. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述第一尖端部的长度大于或等于所述磁阻单元长度的10％；
    所述第二尖端部的长度大于或等于所述磁阻单元长度的10％。
  4. 根据权利要求3所述的抗干扰磁场传感器，其特征在于，所述第一尖端部和所述第二尖端部的长度越长，所述第一尖端部和所述第二尖端部表面磁场越大。
  5. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述多 根导线上通过的电流方向相同,且电流大小相同。
  6. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述第一尖端部的尖端角度小于或等于20°；
    所述第二尖端部的尖端角度小于或等于20°。
  7. 根据权利要求5所述的抗干扰磁场传感器，其特征在于，所述多根导线上通过的电流方向平行于所述磁敏感轴。
  8. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述第一尖端部与所述第二尖端部沿所述易磁化轴方向设置于所述均匀部的相对两侧，且所述第一尖端部与所述第二尖端部沿所述磁敏感轴轴对称。
  9. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述磁阻单元厚度均匀。
  10. 根据权利要求1所述的抗干扰磁场传感器，其特征在于，所述磁阻单元由坡莫合金制成。
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