WO2023047239A1 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
WO2023047239A1
WO2023047239A1 PCT/IB2022/058551 IB2022058551W WO2023047239A1 WO 2023047239 A1 WO2023047239 A1 WO 2023047239A1 IB 2022058551 W IB2022058551 W IB 2022058551W WO 2023047239 A1 WO2023047239 A1 WO 2023047239A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
display device
emitting element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2022/058551
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
杉本和哉
初見亮
久保田大介
佐藤来
中田昌孝
中澤安孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202280063648.6A priority Critical patent/CN117980978A/zh
Priority to JP2023549167A priority patent/JP7843766B2/ja
Priority to US18/693,773 priority patent/US20240389442A1/en
Priority to KR1020247011885A priority patent/KR20240072182A/ko
Priority to DE112022004557.4T priority patent/DE112022004557T5/de
Publication of WO2023047239A1 publication Critical patent/WO2023047239A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • One embodiment of the present invention relates to a display device.
  • One aspect of the present invention relates to an imaging device.
  • One embodiment of the present invention relates to a display device having an imaging function.
  • one aspect of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, light-emitting devices, power storage devices, memory devices, lighting devices, input devices, output devices, input/output devices, and electronic devices including these devices. , their driving method or their manufacturing method.
  • a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
  • display devices are required to have higher definition in order to display high-resolution images. Further, in information terminal devices such as smart phones, tablet terminals, and notebook PCs (personal computers), display devices are required to have low power consumption in addition to high definition. Furthermore, there is a demand for a display device that has various functions in addition to displaying an image, such as a function as a touch panel or a function of capturing an image of a fingerprint for authentication.
  • a light-emitting device having a light-emitting element As a display device, for example, a light-emitting device having a light-emitting element (also referred to as a light-emitting device) has been developed.
  • a light-emitting element also referred to as an EL element
  • EL electroluminescence
  • Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied.
  • An object of one embodiment of the present invention is to provide a display device having an imaging function.
  • An object of one embodiment of the present invention is to provide a display device with high display quality.
  • An object of one embodiment of the present invention is to provide a high-definition imaging device or display device.
  • An object of one embodiment of the present invention is to reduce noise during imaging.
  • An object of one embodiment of the present invention is to provide an imaging device or a display device capable of imaging with high sensitivity.
  • An object of one embodiment of the present invention is to provide a display device or an imaging device with a high aperture ratio.
  • An object of one embodiment of the present invention is to provide a display device from which biometric information such as a fingerprint can be obtained.
  • An object of one embodiment of the present invention is to provide a display device functioning as a touch panel.
  • An object of one embodiment of the present invention is to provide a highly reliable display device, an imaging device, or an electronic device including these devices.
  • An object of one embodiment of the present invention is to provide a display device and an imaging device having a novel structure, or an electronic device including these devices. It is an object of one aspect of the present invention to alleviate at least one of the problems of the prior art.
  • One embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, a light-emitting element over the first substrate, a light-receiving element adjacent to the light-emitting element, and a first light shielding layer of the second substrate, a second light shielding layer on the surface of the second substrate facing the first substrate, and a third light shielding layer on the surface of the second light shielding layer facing the first substrate
  • the first to third light-shielding layers are provided between the light-emitting element and the light-receiving element, respectively, in plan view, and the first light-shielding layer and the third light-shielding layer , is a display device having a gap in a plan view.
  • the first light shielding layer, the second light shielding layer, and the third light shielding layer preferably contain a material that partially absorbs visible light.
  • the number of third light shielding layers is preferably two or more.
  • the number of the first light shielding layers is preferably two or more.
  • an insulating layer is provided between the light emitting element and the light receiving element, and the first light shielding layer is provided on the insulating layer.
  • the insulating layer is preferably a resin layer.
  • the light-emitting element contains a light-emitting material and the light-receiving element contains a photoelectric conversion material.
  • the light-emitting element has a colored layer and two or more light-emitting layers.
  • the first lens is provided on the light emitting element.
  • a second lens is provided on the light receiving element.
  • the third lens is provided on the light emitting element and the fourth lens is provided on the light receiving element.
  • the first to fourth lenses are preferably convex lenses having a convex shape on the side facing the second substrate.
  • the first to fourth lenses are preferably lenses having a substantially trapezoidal cross section.
  • a fifth lens facing the first to fourth lenses is provided on the second substrate.
  • the fifth lens is preferably a convex lens having a convex shape on the side facing the first substrate.
  • the fifth lens is preferably a lens with a substantially trapezoidal cross section.
  • a display device having an imaging function can be provided.
  • a display device with high display quality can be provided.
  • a high-definition imaging device or display device can be provided.
  • noise during imaging can be reduced.
  • an imaging device or a display device capable of imaging with high sensitivity can be provided.
  • a display device or an imaging device with a high aperture ratio can be provided.
  • a display device with which biometric information such as fingerprints can be obtained can be provided.
  • a display device functioning as a touch panel can be provided.
  • a highly reliable display device, an imaging device, or an electronic device including these devices can be provided.
  • a display device, an imaging device, or an electronic device having a novel structure can be provided.
  • One aspect of the present invention can alleviate at least one of the problems of the prior art.
  • FIG. 1A is a top view showing a configuration example of a display device.
  • 1B and 1C are cross-sectional views showing configuration examples of the display device.
  • 2A and 2B are cross-sectional views showing configuration examples of the display device.
  • 3A to 3C are cross-sectional views showing configuration examples of the display device.
  • 4A to 4C are cross-sectional views showing configuration examples of the display device.
  • 5A to 5C are cross-sectional views showing configuration examples of the display device.
  • 6A to 6C are cross-sectional views showing configuration examples of the display device.
  • 7A to 7C are cross-sectional views showing configuration examples of the display device.
  • 8A to 8C are cross-sectional views showing configuration examples of the display device.
  • 9A and 9B are cross-sectional views showing configuration examples of the display device.
  • FIG. 10A and 10B are cross-sectional views showing configuration examples of the display device.
  • 11A and 11B are cross-sectional views showing configuration examples of the display device.
  • 12A and 12B are cross-sectional views showing configuration examples of the display device.
  • 13A to 13C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 14A and 14B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 15A to 15E are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • FIG. 16 is a perspective view showing an example of a display device.
  • FIG. 17A is a cross-sectional view showing an example of a display device;
  • FIG. 17A is a cross-sectional view showing an example of a display device; FIG.
  • 17B is a cross-sectional view showing an example of a transistor; 18A, 18B, and 18D are cross-sectional views showing examples of display devices. 18C and 18E are diagrams showing examples of images. 18F to 18H are top views showing examples of pixels.
  • FIG. 19A is a cross-sectional view showing an example of a display device. 19B to 19D are top views showing examples of pixels.
  • FIG. 20A is a cross-sectional view showing an example of a display device. 20B to 20I are top views showing examples of pixels.
  • 21A and 21B are diagrams showing configuration examples of a display device. 22A to 22G are diagrams showing configuration examples of display devices. 23A to 23F are diagrams showing configuration examples of pixels.
  • FIG. 24A is a perspective view showing an example of an electronic device
  • FIG. 24B is a cross-sectional view showing an example of an electronic device
  • 25A to 25D are diagrams illustrating examples of electronic devices
  • 26A to 26F are diagrams illustrating examples of electronic devices.
  • 27A to 27F are diagrams illustrating examples of electronic devices.
  • film and the term “layer” can be interchanged with each other.
  • conductive layer or “insulating layer” may be interchangeable with the terms “conductive film” or “insulating film.”
  • an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer) or a laminate containing a light-emitting layer. do.
  • a display panel which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display panel is one aspect of the output device.
  • the substrate of the display panel is attached with a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or an IC is sometimes called a display panel module, a display module, or simply a display panel.
  • a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package)
  • an IC is sometimes called a display panel module, a display module, or simply a display panel.
  • One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device).
  • a light-emitting element has a pair of electrodes and an EL layer therebetween.
  • the light receiving element has a pair of electrodes and a photoelectric conversion layer therebetween.
  • the light-emitting element is preferably an organic EL element (organic electroluminescence element).
  • the light receiving element is preferably an organic photodiode (organic photoelectric conversion element).
  • the display device preferably has two or more light-emitting elements that emit different colors.
  • Light-emitting elements that emit different colors have EL layers containing different materials.
  • a full-color display device can be realized by including three types of light-emitting elements that emit red (R), green (G), and blue (B) light.
  • an image can be captured by a plurality of light receiving elements, and thus functions as an imaging device.
  • the light emitting element can be used as a light source for imaging.
  • one embodiment of the present invention can display an image with a plurality of light-emitting elements, and therefore functions as a display device. Therefore, one embodiment of the present invention can be referred to as a display device having an imaging function or an imaging device having a display function.
  • the display section has a function of displaying an image and a function of a light receiving section. Since an image can be captured by a plurality of light receiving elements provided in the display portion, the display device can function as an image sensor, a touch panel, or the like. That is, it is possible to capture an image on the display unit, or detect the approach or contact of an object.
  • the light-emitting element provided in the display unit can be used as a light source when receiving light, there is no need to provide a light source separate from the display device, and a highly functional display can be achieved without increasing the number of electronic components. A device can be realized.
  • the light-receiving element when light emitted from a light-emitting element included in a display portion is reflected by an object, the light-receiving element can detect the reflected light. etc. can be done.
  • the display device of one embodiment of the present invention can capture an image of a fingerprint or a palmprint when a finger, palm, or the like is brought into contact with the display portion. Therefore, an electronic device including the display device of one embodiment of the present invention can perform personal authentication using an image such as a captured fingerprint or palmprint. As a result, there is no need to separately provide an imaging device for fingerprint authentication or palmprint authentication, and the number of parts of the electronic device can be reduced.
  • the light receiving elements are arranged in a matrix in the display portion, an image of a fingerprint or a palm print can be taken anywhere on the display portion, so that an electronic device with excellent convenience can be realized. can be done.
  • biometric authentication method is face authentication, but there is a risk that the accuracy of authentication will differ depending on the situation, such as the accuracy of authentication being significantly reduced when wearing a mask.
  • authentication methods using fingerprints, palmprints, veins, or the like have almost no difference in authentication accuracy depending on the measurement environment, etc., and thus can be said to be higher-accuracy authentication methods.
  • the light emitted from the light emitting element of the display can be used as a light source.
  • the light emitting element it is preferable to cause the light emitting element to emit light momentarily (for example, 100 ⁇ s or more and 100 ms or less).
  • the light emitting element By shortening the light emission time, deterioration of the light emitting element can be suppressed even when light is emitted with high luminance.
  • an image with enhanced contrast (shadow) can be obtained by capturing an image using momentary and high-brightness light emission, it is possible to capture an uneven shape such as a fingerprint more clearly.
  • the EL layer when part or all of the EL layer is separately formed between light-emitting elements of different colors, it is formed by a vapor deposition method using a shadow mask such as a fine metal mask (hereinafter also referred to as FMM: Fine Metal Mask). known to do.
  • FMM Fine Metal Mask
  • island-like organic films are formed due to various influences such as FMM accuracy, positional deviation between the FMM and the substrate, FMM deflection, and broadening of the contour of the formed film due to vapor scattering and the like. Since the shape and position deviate from the design, it is difficult to achieve high definition and high aperture ratio. Therefore, measures have been taken to artificially increase the definition (also referred to as pixel density) by applying a special pixel arrangement method such as a pentile arrangement.
  • an island shape indicates a state in which two or more layers using the same material formed in the same process are physically separated.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • two adjacent island-shaped organic films can be partially overlapped in order to achieve higher definition and higher aperture ratio.
  • the distance between the light emitting regions can be significantly shortened compared to the case where the two island-shaped organic films are not overlapped.
  • current leakage occurs between the two adjacent light-emitting elements through the stacked organic films, resulting in unintended light emission. There is As a result, luminance and contrast are lowered, and the display quality is degraded. In addition, power efficiency, power consumption, etc. deteriorate due to leakage current.
  • part or all of the organic layer positioned between the pair of electrodes of the light-emitting element and part or all of the organic layer positioned between the pair of electrodes of the light-receiving element are formed by photolithography. processed by At this time, it is preferable to separate the organic layers between adjacent light emitting elements and between adjacent light emitting elements and light receiving elements so as not to contact each other. This makes it possible to cut current leak paths (leak paths) through the organic layer between adjacent light emitting elements and between adjacent light emitting elements and light receiving elements.
  • the leak current also called side leak or side leak current
  • highly accurate imaging with a high S/N ratio can be performed. Therefore, even when weak light is detected, a clear image can be captured. Therefore, the luminance of a light-emitting element used as a light source at the time of imaging can be reduced, and power consumption can be reduced.
  • luminance of the light-emitting elements can be increased, contrast can be increased, power efficiency can be increased, or power consumption can be reduced. , etc., can be realized at the same time.
  • an insulating layer in order to protect the side surfaces of the organic laminated film exposed by etching. Thereby, the reliability of the display device can be improved.
  • the resin layer is provided in contact with the EL layer, the EL layer may be dissolved by the solvent used when forming the resin layer. Therefore, it is preferable to provide an insulating layer for protecting the side surface of the EL layer between the EL layer and the resin layer. That is, it is preferable to provide an inorganic insulating layer in contact with the side surface and the upper surface of the EL layer at the end of the EL layer, and provide the resin layer over the inorganic insulating layer.
  • a light-shielding layer containing a light-shielding material between the light-emitting element and the light-receiving element adjacent to each other for example, on the resin layer functioning as the flattening film or in the region overlapping the resin layer.
  • the light-shielding layer can block the path of light (also referred to as stray light) that diffuses from the light-emitting element to the light-receiving element. Since stray light causes noise when an image is captured by the light-receiving element, the sensitivity (signal-to-noise ratio (S/N ratio)) of imaging can be increased by adopting a configuration that blocks stray light.
  • a display device in which a light-emitting element that emits white light and a color filter are combined can be used.
  • light-emitting elements having the same configuration can be applied to light-emitting elements provided in pixels (sub-pixels) that emit light of different colors, and all layers included in the light-emitting elements are arranged between the light-emitting elements. can be formed using the same material. Furthermore, by dividing part or all of the EL layer between the light emitting elements by photolithography, leakage current through the EL layer between the light emitting elements can be suppressed and the contrast can be improved.
  • FIG. 1A shows a schematic top view of display device 100 .
  • the display device 100 includes a plurality of red light emitting elements 110R, green light emitting elements 110G, blue light emitting elements 110B, and light receiving elements 110S.
  • the light-emitting region of each light-emitting element or the light-receiving region of the light-receiving element is denoted by R, G, B, or S.
  • the light-emitting element 110R, the light-emitting element 110G, the light-emitting element 110B, and the light-receiving element 110S are arranged in a matrix.
  • FIG. 1A shows a configuration in which two types of elements are alternately arranged in one direction (row direction, column direction, or oblique direction).
  • the arrangement method of the light-emitting elements and the light-receiving elements is not limited to this, and an arrangement method such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, and a zigzag arrangement may be applied, as well as a pentile arrangement, a diamond arrangement, and the like. can also be used.
  • EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) are preferably used as the light emitting elements 110R, 110G, and 110B.
  • Examples of light-emitting substances included in EL elements include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). ), inorganic compounds (such as quantum dot materials), and the like.
  • a pn-type or pin-type photodiode can be used as the light receiving element 110S.
  • the light receiving element 110S functions as a photoelectric conversion element that detects light incident on the light receiving element 110S and generates charges.
  • the amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
  • FIG. 1A also shows a connection electrode 111C electrically connected to the common electrode 113.
  • FIG. A potential to be supplied to the common electrode 113 (for example, an anode potential or a cathode potential) is applied to the connection electrode 111C.
  • the connection electrode 111C is provided outside the display area where the light emitting elements 110R and the like are arranged. Note that the common electrode 113 is indicated by a dashed line in FIG. 1A.
  • connection electrodes 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), square, or the like.
  • FIG. 1B and 1C are schematic cross-sectional views corresponding to the dashed-dotted line A1-A2 and the dashed-dotted line B1-B2 in FIG. 1A, respectively.
  • FIG. 1B shows a schematic cross-sectional view of the light-emitting element 110B, the light-receiving element 110S, and the light-emitting element 110G
  • FIG. 1C shows a schematic cross-sectional view of the connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. Figure shows.
  • FIG. 1B shows cross sections of the light emitting element 110B, the light receiving element 110S, and the light emitting element 110G.
  • a light-emitting element 110R (not shown), a light-emitting element 110G, a light-emitting element 110B, and a light-receiving element 110S are provided on the substrate 101, respectively. It also has an adhesive layer 171 and a substrate 170 covering the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 110S.
  • the light emitting element 110R (not shown) has a pixel electrode 111R, an organic layer 112R (none of which is shown), a common layer 114, and a common electrode 113.
  • the light emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113.
  • the light emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113.
  • the light receiving element 110S has a pixel electrode 111S, an organic layer 155, a common layer 114, and a common electrode 113.
  • the common layer 114 and the common electrode 113 are commonly provided for the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 110S.
  • the organic layer 112R (not shown) of the light emitting element 110R contains a light-emitting organic compound that emits light having an intensity in at least the red wavelength range.
  • the organic layer 112G included in the light-emitting element 110G includes a light-emitting organic compound that emits light having an intensity in at least the green wavelength range.
  • the organic layer 112B included in the light-emitting element 110B contains a light-emitting organic compound that emits light having an intensity in at least a blue wavelength range.
  • the organic layer 112R, the organic layer 112G, and the organic layer 112B can also be called layers each having a light-emitting layer.
  • the organic layer 155 of the light-receiving element 110S has a photoelectric conversion material that is sensitive to the wavelength region of visible light or infrared light.
  • the photoelectric conversion material included in the organic layer 155 has sensitivity to one or more of the wavelength range of light emitted by the light emitting element 110R, the wavelength range of light emitted by the light emitting element 110G, and the wavelength range of light emitted by the light emitting element 110B. It is preferable to have Alternatively, a photoelectric conversion material having sensitivity to infrared light having a longer wavelength than the wavelength range of light emitted by the light emitting element 110R may be used.
  • the organic layer 155 can also be called an active layer or a photoelectric conversion layer.
  • the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B may be referred to as the light-emitting element 110 when describing matters common to them.
  • components common to these components such as the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B, or the organic layer 112R, the organic layer 112G, and the organic layer 112B, which are distinguished by letters, , may be described using symbols with alphabets omitted.
  • the laminated film (organic layer 112 and common layer 114) located between the pixel electrode 111 and the common electrode 113 can be called an EL layer.
  • the layered film (the organic layer 155 and the common layer 114) located between the pixel electrode 111S and the common electrode 113 can be called a PD layer.
  • the organic layer 112 and the common layer 114 can each independently have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the organic layer 112 has a light-emitting layer.
  • the organic layer 112 may have a layered structure of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 may have an electron injection layer.
  • the common layer 114 may have a structure using a film containing only an inorganic compound or an inorganic substance without containing an organic compound.
  • a pixel electrode 111R (not shown), a pixel electrode 111G, and a pixel electrode 111B are provided on the light emitting element 110R (not shown), the light emitting element 110G, and the light emitting element 110B, respectively.
  • the common layer 114 and the common electrode 113 are provided as a continuous layer common to each light emitting element 110 and light receiving element 110S.
  • One of the pixel electrode 111 and the common electrode 113 is a conductive film that transmits visible light, and the other is a reflective conductive film.
  • a bottom emission display device can be provided.
  • a top emission display device can be obtained.
  • a dual-emission display device can be obtained.
  • a protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110 and the light receiving elements 110S.
  • the protective layer 121 has a function of preventing impurities such as water from diffusing from above (substrate 170 side) to each of the light emitting elements 110 and the light receiving elements 110S.
  • the end of the pixel electrode 111 preferably has a tapered shape.
  • the side surface of the organic layer 112 or the organic layer 155 provided along the side surface of the pixel electrode 111 also has a tapered shape.
  • the coverage of the organic layer 112 or the organic layer 155 provided along the side surface of the pixel electrode 111 can be improved.
  • it is preferable that the side surface of the pixel electrode 111 is tapered because foreign matter (eg, dust or particles) that may be generated during the manufacturing process can be easily removed by cleaning or the like.
  • tapeered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface (or the surface to be formed). For example, it refers to a shape having a region in which an angle (also referred to as a taper angle) formed by an inclined side surface and a substrate surface (or a formation surface) is less than 90 degrees. Note that the side surface of the structure and the substrate surface (or the surface to be formed) are not necessarily completely flat, and may be substantially planar with a fine curvature or substantially planar with fine unevenness. .
  • the organic layer 112 and the organic layer 155 are processed into an island shape by photolithography. Therefore, the organic layer 112 and the organic layer 155 have a shape in which the angle formed by the top surface and the side surface is close to 90 degrees at the ends. On the other hand, an organic film formed using FMM or the like tends to have a thickness that gradually becomes thinner toward the end. The shape may be difficult to distinguish between the top surface and the side surface.
  • the organic layer 112 and the organic layer 155 have an angle (taper angle) between the side surface and the bottom surface (substrate surface) of 10 degrees or more and 120 degrees or less, preferably 20 degrees or more and 100 degrees or less, more preferably 30 degrees or more and 95 degrees or less. , More preferably, it is processed so as to have a region of 45 degrees or more and 90 degrees or less.
  • an insulating layer 125, a resin layer 126, and a light shielding layer 123 are provided between the light emitting element 110 and the light receiving element 110S adjacent to each other.
  • the side surface of the organic layer 112 and the side surface of the organic layer 155 are provided to face each other with the resin layer 126 interposed therebetween.
  • the resin layer 126 functions as a planarizing film for alleviating the step at the end of the organic layer 112 or the organic layer 155 .
  • the provision of the resin layer 126 causes a phenomenon in which the common electrode 113 is divided by a step at the end of the organic layer 112 or the organic layer 155 (also referred to as step disconnection). It is possible to prevent the electrode 113 from being insulated.
  • the resin layer 126 can also be called LFP.
  • An insulating layer containing an organic material can be suitably used as the resin layer 126 .
  • acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, precursors of these resins, and the like are applied as the resin layer 126 .
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • a photosensitive resin can be used as the resin layer 126 .
  • a photoresist may be used as the photosensitive resin.
  • a positive material or a negative material can be used for the photosensitive resin.
  • the resin layer 126 may contain a material that absorbs visible light.
  • the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light.
  • a resin that transmits red, blue, or green light and can be used as a color filter that absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix, or the like. can be used.
  • a common layer 114 , a common electrode 113 and a protective layer 121 are provided on the resin layer 126 .
  • the common layer 114, the common electrode 113, and the protective layer 121 each have a portion overlapping the pixel electrode 111 with the organic layer 112 interposed therebetween, a portion overlapping the pixel electrode 111S with the organic layer 155 interposed therebetween, and a portion overlapping the resin layer 126. , has
  • the upper surface (on the substrate 170 side) of the resin layer 126 has a substantially flat shape.
  • a light shielding layer 123 is provided over the upper surface with the common layer 114, the common electrode 113, and the protective layer 121 interposed therebetween.
  • the light shielding layer 123 has a function of preventing the light emitted by the light emitting element 110 from entering the adjacent light receiving element 110S without escaping the display device 100 (stray light prevention).
  • An adhesive layer 171 is provided to cover the protective layer 121 and the light shielding layer 123 , and a substrate 170 is provided on the adhesive layer 171 .
  • a light shielding layer 172 is provided on the side of the substrate 170 facing the substrate 101 so as to have a region overlapping with the resin layer 126 in plan view.
  • the light shielding layer 172 is provided between the light emitting elements 110 adjacent to each other and between the light emitting elements 110 and the light receiving elements 110S adjacent to each other in plan view.
  • the light shielding layer 172 provided so as to surround the light receiving element 110S in plan view has a function of narrowing down the light incident on the light receiving element 110S. This makes it possible to pick up a clear image.
  • the light shielding layer 172 has a function of hiding structures such as wirings and electrodes arranged in the non-light-emitting region and the non-light-receiving region from being seen by the user. As a result, it is possible to prevent a decrease in contrast due to reflected light in the region and improve display quality.
  • the light shielding layer 172 may be arranged only between the light emitting element 110 and the light receiving element 110S adjacent to each other, not between the light emitting elements 110 adjacent to each other in plan view. By doing so, it is possible to realize a display device capable of picking up a sharp image with a small change in brightness and chromaticity (viewing angle dependency) when viewed from an oblique direction.
  • a light shielding layer 123 having a stray light prevention function is provided on the surface of the light shielding layer 172 facing the substrate 101, as on the resin layer 126 described above.
  • the light shielding layer 123 provided on the surface of the light shielding layer 172 facing the substrate 101 can be made of the same material as the light shielding layer 123 on the protective layer 121 . Also, the light shielding layer 123 provided on the surface of the light shielding layer 172 facing the substrate 101 may be made of the same material as the light shielding layer 172 .
  • the light shielding layer 123 provided on the surface of the light shielding layer 172 facing the substrate 101 and the light shielding layer 123 on the protective layer 121 are staggered (comb-shaped) so as to have gaps therebetween in plan view. ) is preferably provided.
  • the light-shielding layer 123 in a comb shape between the light-emitting element 110 and the light-receiving element 110S that are adjacent to each other, the light-shielding layer 123 can be captured more efficiently than when the light-shielding layer 123 is not provided.
  • a display device with high imaging sensitivity, in which the influence of noise is suppressed, can be realized.
  • the light shielding layers 123 are all shown with the same shape and size, but this is not the only option.
  • the plurality of light shielding layers 123 included in the display device 100 may have different shapes and sizes.
  • the light shielding layer 123 may be provided not only between the adjacent light emitting element 110 and the light receiving element 110S but also between the mutually adjacent light emitting elements 110. By doing so, the lights of different colors emitted from the adjacent light-emitting elements 110 are mixed with each other, and the mixed light is prevented from being emitted from the light-emitting elements 110 to the outside of the display device 100. can be prevented. Accordingly, it is possible to suppress deterioration in the color purity of the light emitted from the light emitting element 110 and deterioration in display quality of the display device 100 resulting therefrom.
  • the light shielding layer 123 preferably contains a material that absorbs at least part of visible light.
  • a material that absorbs at least one of the lights emitted by the light emitting elements 110R, 110G, and 110B may be included in the light shielding layer 123 .
  • the light shielding layer 123 itself may be made of a material that absorbs visible light (eg, a colored organic material or an inorganic material), or the light shielding layer 123 may contain a pigment that absorbs visible light.
  • a resin that contains carbon black as a pigment and functions as a black matrix, or a resin that transmits red, blue, or green light and can be used as a color filter that absorbs other light, or the like. can be used.
  • the light shielding layer 172 can be formed using the same material (described above) as the light shielding layer 123 .
  • the insulating layer 125 is provided in contact with the side surface of the organic layer 112 or the organic layer 155 . Also, the insulating layer 125 is provided to cover the upper end portion of the organic layer 112 or the organic layer 155 . A part of the insulating layer 125 is provided in contact with the upper surface of the substrate 101 .
  • a part of the insulating layer 125 is located between the organic layer 112 or the organic layer 155 and the resin layer 126 and functions as a protective layer to prevent the resin layer 126 from contacting the organic layer 112 or the organic layer 155. .
  • the organic layer 112 or the organic layer 155 and the resin layer 126 are in contact with each other, the organic layer 112 or the organic layer 155 may be dissolved by an organic solvent or the like used when forming the resin layer 126 . Therefore, by providing such an insulating layer 125, the side surface of the organic layer 112 or the organic layer 155 can be protected.
  • the insulating layer 125 can prevent the side surfaces of the organic layer 112 or the organic layer 155 from being exposed to the atmosphere. Thereby, the highly reliable light-emitting element 110 and light-receiving element 110S can be manufactured.
  • the insulating layer 125 can be an insulating layer containing an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
  • a hafnium film, a tantalum oxide film, and the like can be mentioned.
  • the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • As the oxynitride insulating film a silicon oxynitride film, an aluminum oxynitride film, or the like can be given.
  • nitride oxide insulating film a silicon nitride oxide film, an aluminum nitride oxide film, or the like can be given.
  • a metal oxide film such as a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film
  • ALD atomic layer deposition
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • the insulating layer 125 can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, an ALD method, or the like.
  • the insulating layer 125 is preferably formed by an ALD method with good coverage.
  • the resin layer 126 is provided to cover the upper end and side surfaces of the organic layer 112 or the organic layer 155 .
  • a layer 128 and part of an insulating layer 125 are laminated in this order between the upper end of the organic layer 112 or the organic layer 155 and the resin layer 126 .
  • Layer 128 is provided in contact with the upper end of organic layer 112 or organic layer 155 .
  • the layer 128 is a portion of a protective layer (also referred to as a mask layer or sacrificial layer) remaining for protecting the organic layer 112 or the organic layer 155 during etching of the organic layer 112 or the organic layer 155 .
  • a protective layer also referred to as a mask layer or sacrificial layer
  • any of the materials that can be used for the insulating layer 125 described above can be used.
  • metal oxide films such as aluminum oxide films and hafnium oxide films formed by the ALD method, or inorganic insulating films such as silicon oxide films have few pinholes. Therefore, by applying these films to the material of the layer 128, the insulating layer 125 having an excellent function of protecting the EL layer can be formed in a later step.
  • the layer 128 is a film in contact with the upper end portion of the organic layer 112 or the organic layer 155, by using a wet etching method for processing which causes less damage to the formation surface, the light-emitting element 110 can be processed more effectively than a dry etching method. And the reliability of the light receiving element 110S can be improved.
  • the protective layer 121 is provided so as to cover the common electrode 113 .
  • the protective layer 121 preferably has a single-layer structure or a laminated structure including at least an inorganic insulating film.
  • inorganic insulating films include oxide films and nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films.
  • a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide may be used for the protective layer 121 .
  • FIG. 1C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected.
  • openings are provided in the layer 128, the insulating layer 125, and the resin layer 126 above the connection electrode 111C.
  • the connection electrode 111C and the common electrode 113 are electrically connected through the opening.
  • FIG. 1C shows the connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. good.
  • the common layer 114 can be made of a material having a sufficiently low electric resistivity and can be made thin. Therefore, even if the common layer 114 is positioned at the connecting portion 140, there is often no problem. In this configuration, the common electrode 113 and the common layer 114 can be formed using the same shielding mask, so the manufacturing cost can be reduced.
  • FIG. 2A and 2B are diagrams illustrating the effect of the light-blocking layer 123 provided in the display device 100 of one embodiment of the present invention.
  • 2A shows a cross-sectional view without the light shielding layer 123
  • FIG. 2B shows a cross-sectional view with the light shielding layer 123. As shown in FIG.
  • FIG. 2A is a diagram simply showing the path of light emitted by the light emitting element 110 when the display device does not have the light shielding layer 123.
  • FIG. 2A is a diagram simply showing the path of light emitted by the light emitting element 110 when the display device does not have the light shielding layer 123.
  • the light receiving element 110S adjacent to the light emitting element 110 A portion of the light (light 180) that diffuses into the light travels straight toward the light shielding layer 172 provided between the light emitting element 110 and the light receiving element 110S.
  • the light shielding layer 172 can be formed of a material that absorbs visible light or a material containing a pigment that absorbs visible light. Therefore, the light 180 incident on the light shielding layer 172 is partly absorbed by the light shielding layer 172 and weakens in intensity. However, the remaining light not completely absorbed by the light shielding layer 172 is reflected by the light shielding layer 172 and changes its traveling direction toward the substrate 101 side.
  • a part of the light reflected by the light shielding layer 172 enters the adjacent light receiving element 110S.
  • Another reflected light is reflected by the protective layer 121 facing the light shielding layer 172 and changes its traveling direction toward the substrate 170 side.
  • the reflected light reenters the above-described light shielding layer 172, a part of which is absorbed, and the rest is reflected.
  • Part of the reflected light enters the adjacent light receiving element 110S.
  • FIG. 2A shows the path of light reflected and incident on the adjacent light receiving element 110S.
  • the light receiving element 110S may receive part of the light emitted by the adjacent light emitting element 110 as stray light.
  • the stray light can become a noise factor when the light receiving element 110S of the display device captures an image. Therefore, when the light receiving element 110S receives the stray light, the imaging sensitivity (S/N ratio) of the display device decreases. . Therefore, in order to increase the imaging sensitivity of the display device, it is preferable to remove noise factors such as stray light as much as possible.
  • FIG. 2B is a diagram simply showing the path of light emitted by the light emitting element 110 when the display device has the light shielding layer 123. As shown in FIG.
  • the light that has been incident on the light receiving element 110S by being reflected three times in FIG. 2A is shown in FIG. is incident on the side surface of the light shielding layer 123 of .
  • the light shielding layer 123 can be formed of a material that absorbs visible light or a material that contains a pigment that absorbs visible light. Therefore, part of the light incident on the light shielding layer 123 is absorbed by the light shielding layer 123 . The remaining light not completely absorbed by the light shielding layer 123 is reflected by the light shielding layer 123 and changes its traveling direction toward the substrate 170 side. Since the traveling path of the light is not blocked by the light shielding layer 172, the light finally passes through the substrate 170 and is emitted to the outside (not shown).
  • the light incident on the light receiving element 110S by one reflection in FIG. 2A is Part of it is reflected by the bottom surface of the light shielding layer 123 on the near side. Then, the reflected light is incident toward the side surface of the light shielding layer 123 provided on the protective layer 121 . A part of the incident light is absorbed by the light shielding layer 123 to weaken the intensity. The rest of the light is reflected toward the substrate 101 by the light shielding layer 123 .
  • the display device 100 includes two light-blocking layers 123 provided on the surface of the light-blocking layer 172 facing the substrate 101 , and one light-blocking layer provided over the protective layer 121 .
  • the layers 123 are arranged in a comb shape so as to have a gap in a plan view. Therefore, the light (not shown), another light shielding layer 123 provided on the surface of the light shielding layer 172 facing the substrate 101 blocks the path and prevents the light from entering the light receiving element 110S. can be done.
  • FIG. 1B and 2B illustrate a configuration in which two light shielding layers 123 are provided on the surface of the light shielding layer 172 facing the substrate 101, and one light shielding layer 123 is provided on the protective layer 121.
  • FIG. it is not limited to this.
  • the number of the light-shielding layers 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 may be one, or three or more.
  • two or more light shielding layers 123 may be provided on the protective layer 121 .
  • the display device 100 of one embodiment of the present invention includes the comb-like light-blocking layer 123 between the light-emitting element 110 and the light-receiving element 110S, which are adjacent to each other. can be prevented from entering the adjacent light receiving element 110S as stray light. As a result, noise during imaging can be reduced. In addition, a display device that performs high-sensitivity imaging with a high S/N ratio can be realized.
  • one of the two light shielding layers 123 provided on the surface of the light shielding layer 172 facing the substrate 101 of the display device 100 shown in FIG. 1B is removed.
  • the arrangement of the two light shielding layers 123 is closer to the light emitting element 110 than the light receiving element 110S as a whole, but this is not the only option.
  • the two light shielding layers 123 may be arranged at positions close to the light receiving element 110S.
  • the two light shielding layers 123 may be positioned exactly in the middle between the adjacent light emitting element 110 and light receiving element 110S.
  • the alignment accuracy when bonding the structure provided on the substrate 101 side and the structure provided on the substrate 170 side in the manufacturing process of the display device is the same as that of the display device shown in FIG. 1B. Since it is not required as much as in the case of 100, it is preferable from the viewpoint of ease of manufacturing a display device.
  • one of the two light shielding layers 123 provided on the surface of the light shielding layer 172 facing the substrate 101 of the display device 100 shown in FIG. 1B is removed.
  • the arrangement of the two light shielding layers 123 is closer to the light receiving element 110S than the light emitting element 110 as a whole, but this is not the only option.
  • the two light-blocking layers 123 may be arranged close to the light-emitting element 110 .
  • the two light shielding layers 123 may be positioned exactly in the middle between the adjacent light emitting element 110 and light receiving element 110S. With this configuration, the same advantages as in FIG. 3A described above can be enjoyed.
  • FIG. 3C is a configuration example in which one light shielding layer 123 is provided on each of the surface of the light shielding layer 172 facing the substrate 101 and the protective layer 121, as in FIG. 3A.
  • the size of the two light shielding layers 123 is larger than in the configuration example shown in FIG. 3A. 3A in that the middle between the two light shielding layers 123 is located exactly in the middle between the adjacent light emitting element 110 and light receiving element 110S.
  • FIG. 4A shows a configuration example in which the position of the light shielding layer 123 on the surface of the light shielding layer 172 facing the substrate 101 and the position of the light shielding layer 123 on the protective layer 121 are different from those in FIG. 3C.
  • the light shielding layer 123 on the surface of the light shielding layer 172 facing the substrate 101 is arranged near the light emitting element 110, and the light shielding layer 123 on the protective layer 121 is located on the light receiving element 110S.
  • the light shielding layer 123 on the surface of the light shielding layer 172 facing the substrate 101 is arranged near the light receiving element 110S, and the light shielding layer 123 on the protective layer 121 are placed near the light emitting element 110 .
  • FIG. 4B is a configuration example in which one light shielding layer 123 is provided on each of the surface of the light shielding layer 172 facing the substrate 101 and on the protective layer 121, and the two light shielding layers 123 are in contact with each other. is.
  • the two light shielding layers 123 block the path for the light emitted from the light emitting element 110 to reach the adjacent light receiving element 110S between the substrate 170 and the protective layer 121.
  • the thicknesses of the two light-shielding layers 123 the distance (also referred to as the gap) between the substrate 101 and the substrate 170 can be controlled, which has the secondary effect of reducing variation in the gap. also play.
  • FIG. 4C is a configuration example in which one light shielding layer 123 is provided on the surface of the light shielding layer 172 facing the substrate 101 and two light shielding layers 123 are provided on the protective layer 121 .
  • FIG. 5A is an example in which the display device 100 shown in FIG. 1B has a lens 173 on the light emitting element 110.
  • FIG. 5A is an example in which the display device 100 shown in FIG. 1B has a lens 173 on the light emitting element 110.
  • the lens 173 is provided on and in contact with the protective layer 121 and has a region overlapping with the pixel electrode 111 of the light emitting element 110 with the protective layer 121 interposed therebetween.
  • the lens 173 it is preferable to use a material that has a higher refractive index with respect to at least visible light than the layer (here, the adhesive layer 171) in contact with the lens surface (convex surface) of the lens 173. Further, when imaging is performed using infrared light (an example of the configuration of the light-emitting element in this case will be described later in Embodiment 3), the lens 173 has a refractive index with respect to the infrared light, and the lens surface It is preferable to use a material that is higher than the layer in contact with the .
  • a convex lens having a convex shape on the side facing the substrate 170 is preferably used as the lens 173 .
  • the lens 173 By providing the lens 173 over the light-emitting element 110, light extraction efficiency can be improved and a display device with higher luminance can be realized.
  • desired luminance can be obtained with lower power consumption, and a display device with low power consumption can be realized.
  • FIG. 5B is an example in which the display device 100 shown in FIG. 1B has a lens 173 on the light receiving element 110S.
  • the lens 173 is provided on and in contact with the protective layer 121 and has a region overlapping with the pixel electrode 111S of the light receiving element 110S with the protective layer 121 interposed therebetween.
  • the lens 173 on the light receiving element 110S By providing the lens 173 on the light receiving element 110S, the amount of light incident on the light receiving element 110S can be increased. As a result, since it is possible to perform imaging with higher sensitivity than when the lens 173 is not provided, it is possible to reduce the brightness of illumination for imaging and reduce power consumption during imaging.
  • FIG. 5C is an example in which the display device 100 shown in FIG. 1B has lenses 173 on both the light emitting element 110 and the light receiving element 110S.
  • FIG. 6A is an example in which the lens 173 is arranged on the substrate 170 side in the configuration shown in FIG. 5A.
  • the lens is lens 175 .
  • a convex lens having a convex shape on the side facing the substrate 101 is preferably used for the lens 175 .
  • Such a structure is also preferable because it is expected to improve the light extraction efficiency of the light emitting element 110, as in FIG. 5A.
  • FIG. 6B is an example in which the lens 173 is arranged on the substrate 170 side in the configuration shown in FIG. 5B.
  • the lens is lens 175 .
  • a convex lens having a convex shape on the side facing the substrate 101 is preferably used for the lens 175 .
  • Such a configuration is also preferable because an increase in the amount of light incident on the light receiving element 110S can be expected, as in FIG. 5B.
  • FIG. 6C is an example of incorporating both configurations of FIGS. 6A and 6B.
  • FIG. 7A is an example in which the shape of the lens 173 is different in the configuration shown in FIG. 5A. Specifically, in the configuration shown in FIG. 5A, a convex lens with a substantially hemispherical cross section is used as the lens 173, but in the configuration shown in FIG. 7A, a lens with a substantially trapezoidal cross section is used. .
  • the width and thickness of the lens are almost proportional, so there is a possibility that it cannot be arranged depending on the pixel size.
  • the thickness can be adjusted regardless of the width of the lens. is possible and is preferred.
  • the distance between the substrate 101 and the substrate 170 can be shortened, the thickness of the entire display device can be reduced.
  • FIG. 7B is an example in which a lens having a substantially trapezoidal cross section is used as the lens 173 in the configuration shown in FIG. 5B.
  • FIG. 7C is an example in which a lens having a substantially trapezoidal cross section is used as the lens 173 in the configuration shown in FIG. 5C.
  • FIG. 8A is an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6A.
  • FIG. 8B is an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6B.
  • FIG. 8C is an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6C.
  • FIG. 9A is an example in which both the configuration shown in FIG. 5C and the configuration shown in FIG. 6C are combined. With such a configuration, the light extraction efficiency from the light emitting element 110 can be improved more than when only the configuration shown in FIG. 5C or only the configuration shown in FIG. 6C is applied. Also, the amount of light incident on the light receiving element 110S can be increased.
  • FIG. 9B is an example in which both the configuration shown in FIG. 5C and the configuration shown in FIG. 8C are combined.
  • the light extraction efficiency from the light emitting element 110 can be improved more than when only the configuration shown in FIG. 5C or only the configuration shown in FIG. 8C is applied.
  • the amount of light incident on the light receiving element 110S can be increased.
  • the distance between the substrate 101 and the substrate 170 can be shortened as compared with the configuration shown in FIG. 9A, the thickness of the entire display device can be reduced.
  • FIG. 10A is an example in which both the configuration shown in FIG. 6C and the configuration shown in FIG. 7C are combined.
  • the light extraction efficiency from the light emitting element 110 can be improved more than when only the configuration shown in FIG. 6C or only the configuration shown in FIG. 7C is applied.
  • the amount of light incident on the light receiving element 110S can be increased.
  • the distance between the substrate 101 and the substrate 170 can be shortened compared to the configuration shown in FIG. 9A, so the thickness of the entire display device can be reduced.
  • FIG. 10B is an example in which both the configuration shown in FIG. 7C and the configuration shown in FIG. 8C are combined.
  • the light extraction efficiency from the light emitting element 110 can be improved more than when only the configuration shown in FIG. 7C or only the configuration shown in FIG. 8C is applied.
  • the amount of light incident on the light receiving element 110S can be increased.
  • the distance between the substrate 101 and the substrate 170 can be shortened compared to the configurations shown in FIGS. 9B and 10A, the thickness of the entire display device can be reduced.
  • FIG. 11A is an example of applying a light-emitting element 110W that emits white light instead of the light-emitting elements 110R (not shown), the light-emitting elements 110G, and the light-emitting elements 110B in the configuration illustrated in FIG. 1B.
  • the light emitting element 110W has an organic layer 112W and a common layer 114 between the pixel electrode 111W and the common electrode 113.
  • the organic layer 112W has a light-emitting layer that emits white light.
  • it can be configured to have two kinds of light-emitting materials that have a complementary color relationship.
  • a colored layer 174R (not shown), a colored layer 174G, or a colored layer 174B is provided in a region overlapping the light emitting element 110W on the substrate 170 (the side facing the substrate 101).
  • the colored layer 174R has a function of transmitting red light and absorbing light of other colors.
  • the colored layer 174G has a function of transmitting green light and absorbing light of other colors.
  • the colored layer 174B has a function of transmitting blue light and absorbing light of other colors. This enables full-color display.
  • the organic layer 112W is processed by photolithography and divided between the adjacent light emitting elements 110W. As a result, it is possible to suppress color mixture due to leakage current flowing between the light emitting elements 110W through the organic layer 112W.
  • a light shielding layer 172 between the colored layers 174 adjacent to each other. This prevents the light from the light emitting element 110W from passing through between the colored layers 174, thereby suppressing a decrease in contrast.
  • the light shielding layer 172 may also function as the light shielding layer 172 by stacking two or more colored layers 174 without providing the light shielding layer 172 .
  • the colored layer 174 is not provided in the region overlapping the light receiving element 110S on the substrate 170 (the side facing the substrate 101). This makes it possible to increase the amount of light incident on the light receiving element 110S compared to the case where the colored layer 174 is provided. If it is desired to select the wavelength of light to be detected by the light receiving element 110S, a colored layer that transmits light of a predetermined wavelength may be placed on the path of the light incident on the light receiving element 110S. At this time, a colored layer that transmits infrared light and blocks visible light may be used.
  • FIG. 11B is an example in which the colored layer 174 is arranged on the protective layer 121 in the configuration shown in FIG. 11A.
  • the distance between the light emitting element 110W and the colored layer 174 can be shortened. Color mixture can be suppressed, and a display device with high color reproducibility can be realized.
  • the configuration shown in FIG. 12A differs from the configurations shown in FIGS. 1 to 11 in that the side surface of the pixel electrode 111 is substantially perpendicular to the substrate surface and does not have a tapered shape. 1 to 11 in that the edges of the organic layer 112 and the organic layer 155 do not cover the edges of the pixel electrode 111 .
  • the layer 128, the insulating layer 125, and the resin layer 126 are not provided between the light-emitting element 110 and the light-receiving element 110S that are adjacent to each other, and the insulating layer 131 is provided instead.
  • the configuration is different from that shown in FIGS.
  • an insulating layer 131 separates adjacent light-emitting elements 110 and light-receiving elements 110S and adjacent light-emitting elements 110 (not shown).
  • the upper surface of the insulating layer 131 has a substantially flat region, and the edge covers the upper edge and side surface of the pixel electrode 111 .
  • the organic layer 112 or the organic layer 155 is provided so as to cover part of the upper surface of the pixel electrode 111 and the end of the insulating layer 131, and the upper surface and side surfaces of the organic layer 112 or the organic layer 155 and the upper surface of the insulating layer 131 are provided.
  • a common layer 114 , a common electrode 113 , and a protective layer 121 are laminated in this order so as to cover a part (substantially flat region) of .
  • a part of the region of the protective layer 121 that overlaps with the insulating layer 131 has a substantially flat upper surface, and the light shielding layer 123 is provided on this region.
  • An adhesive layer 171 is provided to cover the protective layer 121 , and a substrate 170 is provided on the adhesive layer 171 .
  • a light shielding layer 172 is provided in a region overlapping with the insulating layer 131 on the side of the substrate 170 facing the substrate 101, and a protective layer 121 is formed on the surface of the light shielding layer 172 facing the substrate 101 in plan view.
  • Two light shielding layers 123 are provided so as to have a gap between them and the upper light shielding layer 123 .
  • the configuration shown in FIG. 12A has a larger size of the light emitting surface of the light emitting element 110 than the configurations shown in FIGS. That is, the size of the surface of the portion where the pixel electrode 111, the organic layer 112, the common layer 114, and the common electrode 113 are laminated is large. The same applies to the size of the light receiving surface of the light receiving element 110S.
  • the organic layer 112 and the organic layer 155 can be separately manufactured in sizes larger than those of the structures shown in FIGS. machining accuracy is not required. Therefore, in the configuration shown in FIG. 12A, the light-emitting element 110 or the light-receiving element 110S can also be formed by vapor deposition using a shadow mask such as FMM, for example. As described above, the configuration shown in FIG. 12A is preferable because it has more options for forming the light-emitting element 110 or the light-receiving element 110S than the configuration shown in FIGS.
  • FIG. 12B is an example in which the structure shown in FIG. 12A has a light-emitting element 110W that emits white light and the colored layer 174 shown in FIG. 11A is used.
  • Example of manufacturing method An example of a method for manufacturing a display device of one embodiment of the present invention is described below. Here, an example of a method for manufacturing the display device 100 illustrated in FIG. 1B is described.
  • the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using the sputtering method, CVD method, vacuum deposition method, PLD method, ALD method, or the like.
  • the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like.
  • PECVD plasma enhanced CVD
  • thermal CVD thermal CVD
  • MOCVD metal organic chemical vapor deposition
  • thin films that make up the display device can be applied by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, etc. It can be formed by a method such as coating or knife coating.
  • vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting elements.
  • vapor deposition methods include physical vapor deposition (PVD) such as sputtering, ion plating, ion beam vapor deposition, molecular beam vapor deposition, and vacuum vapor deposition, and chemical vapor deposition (CVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the functional layers included in the EL layer, vapor deposition ( vacuum deposition method, etc.), coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, It can be formed by a method such as a flexographic (letterpress printing) method, a gravure method, or a microcontact method.
  • the thin film when processing the thin film that constitutes the display device, a photolithography method or the like can be used.
  • the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • a photolithography method there are typically the following two methods.
  • One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask.
  • the other is a method of forming a thin film having photosensitivity and then exposing and developing the thin film to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
  • ultraviolet rays KrF laser light (wavelength: 248 nm), ArF laser light (wavelength: 193 nm), or the like can also be used.
  • extreme ultraviolet (EUV: Extreme Ultra-Violet) light with a wavelength of 10 nm or more and 100 nm or less, or X-rays may be used.
  • An electron beam can also be used instead of the light used for exposure.
  • the use of extreme ultraviolet light, X-rays, electron beams, or the like is preferable because it enables extremely fine processing.
  • a photomask is not required when exposure is performed by scanning a beam such as an electron beam.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
  • the pixel electrode 111 is formed on the substrate 101 .
  • a substrate having heat resistance that can withstand at least subsequent heat treatment can be used.
  • a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
  • a semiconductor substrate such as a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium or the like, or an SOI substrate can be used.
  • the substrate 101 it is preferable to use a substrate in which a semiconductor circuit including a semiconductor element such as a transistor is formed on the above semiconductor substrate or insulating substrate.
  • the semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driver circuit (gate driver), a source line driver circuit (source driver), and the like.
  • gate driver gate line driver
  • source driver source driver
  • an arithmetic circuit, a memory circuit, and the like may be configured.
  • a material for example, silver, aluminum, or the like
  • a material having the highest possible reflectance over the entire wavelength range of visible light
  • a light-transmitting conductive film may be stacked over the reflective conductive film, and the thickness of the light-transmitting conductive film may be different for each light-emitting element.
  • a sputtering method or a vacuum deposition method, for example, can be used to form the pixel electrode 111 .
  • the organic layer 112 or the organic layer 155 is formed on the pixel electrode 111 .
  • the organic layer 112 has at least a film containing a luminescent compound. Alternatively, one or more of films functioning as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, or a hole injection layer may be stacked.
  • the organic layer 112 can be formed by, for example, an evaporation method, a sputtering method, an inkjet method, or the like. Note that the method is not limited to this, and the film forming method described above can be used as appropriate.
  • the organic layer 155 has a film containing a photoelectric conversion material that is sensitive to visible or infrared wavelengths. The organic layer 155 can also be formed by a method similar to that of the organic layer 112 .
  • a layer 128, an insulating layer 125, a resin layer 126, etc. are formed between adjacent light emitting elements 110 and between adjacent light emitting elements 110 and light receiving elements 110S.
  • an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be suitably used.
  • the layer 128 can be formed by various deposition methods such as a sputtering method, an evaporation method, a CVD method, and an ALD method.
  • the ALD method causes little film formation damage to a layer to be formed
  • the layer 128 that is formed directly over the organic layer 112 or the organic layer 155 is preferably formed by the ALD method.
  • an oxide such as aluminum oxide, hafnium oxide, or silicon oxide
  • a nitride such as silicon nitride or aluminum nitride
  • an oxynitride such as silicon oxynitride
  • Such an inorganic insulating material can be formed using a film formation method such as a sputtering method, a CVD method, or an ALD method, and it is particularly preferable to use an ALD method.
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, tantalum, or the metal
  • a low melting point material such as aluminum or silver.
  • a metal oxide such as indium gallium zinc oxide (In--Ga--Zn oxide, also referred to as IGZO) can be used.
  • indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn -Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and the like can be used.
  • indium tin oxide containing silicon or the like can be used.
  • a material that can be dissolved in a chemically stable solvent may be used as the layer 128 .
  • a material that dissolves in water or alcohol can be suitably used for layer 128 .
  • the solvent can be removed at a low temperature in a short time by performing heat treatment under a reduced pressure atmosphere, so that thermal damage to the organic layer 112 or the organic layer 155 can be reduced, which is preferable.
  • Wet deposition methods that can be used to form the layer 128 include spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. and so on.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.
  • the material of the insulating layer 125 it is preferable to use the same material as that of the layer 128.
  • the use of the ALD method is preferable because film formation damage to the formation surface can be reduced and a film with high coverage can be formed.
  • the thickness of the insulating layer 125 is preferably 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less.
  • the insulating layer 125 is formed in contact with the side surfaces of the EL layer and the photoelectric conversion layer, it is preferably formed by a formation method that causes less damage to the EL layer and the photoelectric conversion layer. Further, the insulating layer 125 is formed at a temperature lower than the heat-resistant temperature of the EL layer.
  • the substrate temperature when the insulating layer 125 is formed is typically 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 140° C. or lower, more preferably 120° C. or lower, and more preferably 120° C. or lower.
  • the temperature is preferably 100° C. or lower.
  • a photosensitive organic resin is preferably used as the resin layer 126 .
  • a photosensitive acrylic resin it is preferable to use a photosensitive acrylic resin.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • the resin layer 126 is preferably formed by, for example, a spin coat method or an ink jet method. In addition, it is not limited to this, and can be formed using a wet film forming method such as dipping, spray coating, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. can be done.
  • a wet film forming method such as dipping, spray coating, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. can be done.
  • a common layer 114 is formed covering each of the organic layers 112, the organic layer 155, and the resin layer 126.
  • the common layer 114 can be formed by, for example, sputtering or vacuum deposition.
  • the common electrode 113 is formed by, for example, a sputtering method or a vacuum deposition method.
  • the common layer 114 and the common electrode 113 can be formed using a shielding mask (also referred to as a metal mask or a rough metal mask) for defining a film formation area instead of being formed over the entire surface of the substrate 101 .
  • a shielding mask also referred to as a metal mask or a rough metal mask
  • the common layer 114 is formed in the area where each light emitting element 110 and the light receiving element 110S are provided, and the common electrode 113 is electrically connected to the area where each light emitting element 110 and the light receiving element 110S are provided and the common electrode 113. It is preferable to form the film in a predetermined area including the area where the electrode is provided.
  • the light-emitting element 110 and the light-receiving element 110S can be manufactured through the above steps.
  • a protective layer 121 is formed on the common electrode 113 .
  • a sputtering method, a PECVD method, or an ALD method is preferably used for forming the inorganic insulating film used for the protective layer 121 .
  • the ALD method is preferable because it has excellent step coverage and hardly causes defects such as pinholes.
  • 13A to 15B are schematic cross-sectional views illustrating steps for manufacturing the light-blocking layer 123 included in the display device 100 of one embodiment of the present invention.
  • 13 and 14 are cross-sectional views of the process of forming the light shielding layer 123 on the structure on the substrate 101.
  • FIG. 15A and 15B are cross-sectional views of a process of forming the light shielding layer 123 on the structure on the substrate 170.
  • FIG. The cross-sectional view shows a cross-section between the dashed-dotted line A1-A2 shown in FIG. 1A.
  • a light-shielding film 123a which later becomes the light-shielding layer 123, is formed on the protective layer 121 (FIG. 13A).
  • the light shielding film 123a preferably contains a material that absorbs at least part of visible light.
  • the light shielding film 123a itself may be made of a material that absorbs visible light (for example, a colored organic material or an inorganic material), or the light shielding film 123a may contain a pigment that absorbs visible light. .
  • the light shielding film 123a for example, a resin that contains carbon black as a pigment and functions as a black matrix, or a resin that transmits red, blue, or green light and can be used as a color filter that absorbs other light, or the like. can be used.
  • Examples of methods for forming the light shielding film 123a include a vacuum deposition method, a sputtering method, a CVD method, an ALD method, and the like.
  • a resist mask 190a is formed on the light shielding film 123a.
  • a resist material containing a photosensitive resin such as a positive resist material or a negative resist material, can be used for the resist mask 190a.
  • a positive acrylic resin is used for the resist mask 190a, a region where the light shielding layer 123 is not formed in a later step is irradiated with visible light or ultraviolet light using a mask 136 (FIG. 13B).
  • a resist mask 190b (FIG. 13C).
  • an acrylic resin is used for the resist mask 190a
  • an alkaline solution for example, a tetramethylammonium hydroxide aqueous solution (TMAH) can be used.
  • TMAH tetramethylammonium hydroxide aqueous solution
  • residues during development may be removed.
  • the residue can be removed by ashing using oxygen plasma.
  • the light shielding film 123a is etched to form the light shielding layer 123 (FIG. 14A).
  • Etching can be performed by a dry etching method or a wet etching method. Note that the etching treatment may reduce the film thickness of the resist mask 190b or the film thickness of the protective layer 121 in a region that does not overlap with the light shielding layer 123 in some cases.
  • the resist mask 190b is removed to expose the light shielding layer 123 (FIG. 14B).
  • the removal of the resist mask 190b can be performed by a wet etching method or a dry etching method.
  • a dry etching method also referred to as plasma ashing
  • an oxygen gas as an etching gas.
  • a light shielding layer 172 is formed on the substrate 170 .
  • a material with high translucency is preferably used for the substrate 170 .
  • a glass material, a resin material, or the like can be used as the substrate 170 .
  • an optical functional material such as a polarizing plate and a light diffusion film can be used.
  • the light shielding layer 172 is formed on the substrate 170 so as to be positioned between the light emitting elements 110 adjacent to each other and between the light emitting elements 110 and the light receiving elements 110S adjacent to each other in a plan view of the display device 100 (FIG. 1A). prepare.
  • the same material as the light shielding layer 123 described above can be used.
  • the light shielding layer 172 can be formed by a vacuum evaporation method, a sputtering method, a CVD method, an ALD method, or the like.
  • a light shielding film 123b that will later become the light shielding layer 123 is formed on the substrate 170 on which the light shielding layer 172 is formed (FIG. 15A).
  • the same material as the light shielding film 123a described above can be used.
  • the method for forming the light shielding film 123b includes a vacuum deposition method, a sputtering method, a CVD method, an ALD method, and the like.
  • a resist mask 191a is formed on the light shielding film 123b.
  • the resist mask 191a the same material as the resist mask 190a described above can be used.
  • a mask 137 is used to irradiate visible light or ultraviolet light to a region where the light shielding layer 123 is not formed in a later step (FIG. 15B).
  • a resist mask 191b (FIG. 15C).
  • an acrylic resin is used for the resist mask 191a
  • an alkaline solution for example, a tetramethylammonium hydroxide aqueous solution (TMAH) can be used.
  • TMAH tetramethylammonium hydroxide aqueous solution
  • residues during development may be removed.
  • the residue can be removed by ashing using oxygen plasma.
  • the light shielding film 123b is etched to form the light shielding layer 123 (FIG. 15D).
  • the etching process the same process as that for the light shielding film 123a described above can be used. Note that the etching treatment may reduce the film thickness of the resist mask 191b or the film thickness of the region of the light shielding layer 172 that does not overlap with the light shielding layer 123 in some cases.
  • the resist mask 191b is removed to expose the light shielding layer 123 (FIG. 15E).
  • the same etching method as that for removing the resist mask 190b can be used. Note that the etching treatment may reduce the thickness of the light shielding layer 123 or the thickness of the region of the light shielding layer 172 that does not overlap with the light shielding layer 123 in some cases.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • the display device 100 of one embodiment of the present invention can be manufactured (FIG. 1B).
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • Embodiment 2 In this embodiment, a structural example of a display device of one embodiment of the present invention will be described. Although a display device capable of displaying an image is described here, it can be used as a display device by using a light-emitting element as a light source.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment includes a relatively large screen such as a television device, a desktop or notebook personal computer, a computer monitor, digital signage, and a large game machine such as a pachinko machine. In addition to electronic devices, it can also be used for display parts of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch terminals, tablet terminals, personal digital assistants, and sound reproducing devices.
  • FIG. 16 shows a perspective view of the display device 400
  • FIG. 17A shows a cross-sectional view of the display device 400. As shown in FIG.
  • the display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together.
  • the substrate 452 is clearly indicated by dashed lines.
  • the display device 400 has a display section 462, a circuit 464, wiring 465, and the like.
  • FIG. 16 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400 . Therefore, the configuration shown in FIG. 16 can also be called a display module including the display device 400, an IC (integrated circuit), and an FPC.
  • a scanning line driving circuit can be used as the circuit 464 .
  • the wiring 465 has a function of supplying signals and power to the display section 462 and the circuit 464 .
  • the signal and power are input to the wiring 465 from the outside through the FPC 472 or input to the wiring 465 from the IC 473 .
  • FIG. 16 shows an example in which an IC 473 is provided on a substrate 451 by a COG method or a COF (Chip On Film) method.
  • IC 473 for example, an IC having a scanning line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 400 and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 17A shows an example of a cross section of the display device 400 when part of the region including the FPC 472, part of the circuit 464, part of the display portion 462, and part of the region including the connection portion are cut. show.
  • FIG. 17A shows an example of a cross section of the display section 462, in particular, a region including a light emitting element 430b that emits green light (G) and a light receiving element 440 that receives reflected light (L).
  • a display device 400 shown in FIG. 17A includes a transistor 252, a transistor 260, a transistor 258, a light emitting element 430b, a light receiving element 440, and the like between a substrate 451 and a substrate 452.
  • the light emitting element 430b and the light receiving element 440 the light emitting element or light receiving element exemplified above can be applied.
  • the three sub-pixels are red (R), green (G), and blue (B).
  • Color sub-pixels, three-color sub-pixels of yellow (Y), cyan (C), and magenta (M) can be used.
  • the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y four-color sub-pixels. be done.
  • the sub-pixel may include a light-emitting element that emits infrared light.
  • a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range can be used.
  • a light shielding layer 419 is provided on the surface of the substrate 452 on the substrate 451 side so as to have a region overlapping with the resin layer 422 on the substrate 451 .
  • a resin layer 422 is provided between the light emitting element 430 b and the light receiving element 440 , and two light shielding layers 417 are provided on the light shielding layer 419 facing the resin layer 422 .
  • the substrate 452 and protective layer 416 are adhered via an adhesive layer 442 .
  • the adhesive layer 442 is provided so as to overlap each of the light emitting element 430b and the light receiving element 440, and the display device 400 has a solid sealing structure.
  • the light-emitting element 430b and the light-receiving element 440 have conductive layers 411a, 411b, and 411c as pixel electrodes.
  • the conductive layer 411b reflects visible light and functions as a reflective electrode.
  • the conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.
  • the conductive layer 411a included in the light-emitting element 430b is electrically connected to the conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 294.
  • the transistor 260 has a function of controlling driving of the light emitting element.
  • the conductive layer 411 a included in the light receiving element 440 is electrically connected to the conductive layer 272 b included in the transistor 258 through an opening provided in the insulating layer 294 .
  • the transistor 258 has a function of controlling the timing of exposure using the light receiving element 440 and the like.
  • An organic layer 412G or an organic layer 412S is provided to cover the pixel electrodes.
  • An insulating layer 421 is provided in contact with a side surface of the organic layer 412G and a side surface of the organic layer 412S, and a resin layer 422 is provided on the insulating layer 421.
  • FIG. A common layer 414, a common electrode 413, and a protective layer 416 are provided to cover the organic layers 412G and 412S.
  • the upper surface of the resin layer 422 has a substantially flat shape, and one light shielding layer 417 is provided on the flat region of the resin layer 422 located between the light emitting element 430b and the light receiving element 440. .
  • the light shielding layer 417 on the resin layer 422 and the two light shielding layers 417 on the light shielding layer 419 are arranged in a comb shape so as to have a gap therebetween in plan view.
  • the light G emitted by the light emitting element 430b is emitted to the substrate 452 side.
  • the light receiving element 440 receives the light L incident through the substrate 452 and converts it into an electric signal.
  • a material having high visible light transmittance is preferably used for the substrate 452 .
  • the transistors 252 , 260 , and 258 are all formed over the substrate 451 . These transistors can be made with the same material and the same process.
  • transistor 252, the transistor 260, and the transistor 258 may be separately manufactured so as to have different structures.
  • transistors with or without bottom gates may be separately manufactured, or transistors with different materials and/or thicknesses may be manufactured for semiconductors, gate electrodes, gate insulating layers, source electrodes, and drain electrodes. .
  • the substrate 451 and the insulating layer 262 are bonded together by an adhesive layer 455 .
  • a manufacturing substrate provided with an insulating layer 262, each transistor, each light-emitting element, a light-receiving element, and the like, and a substrate 452 provided with a light-shielding layer 419 and a light-shielding layer 417 are bonded together. Laminated by layer 442 . Then, the formation substrate is peeled off and a substrate 451 is attached to the exposed surface, so that each component formed over the formation substrate is transferred to the substrate 451 .
  • Each of the substrates 451 and 452 preferably has flexibility. Thereby, the flexibility of the display device 400 can be enhanced.
  • a connecting portion 254 is provided in a region of the substrate 451 where the substrate 452 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connecting layer 292 .
  • the conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. Thereby, the connection portion 254 and the FPC 472 can be electrically connected via the connection layer 292 .
  • the transistors 252, 260, and 258 each include a conductive layer 271 functioning as a gate electrode, an insulating layer 261 functioning as a gate insulating layer, a semiconductor layer 281 having a channel formation region 281i and a pair of low-resistance regions 281n, and a pair of low-resistance regions 281n.
  • a conductive layer 272a connected to one of the regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 functioning as a gate insulating layer, a conductive layer 273 functioning as a gate electrode, and a conductive layer 273 has an insulating layer 265 covering the The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.
  • the conductive layers 272a and 272b are connected to the low resistance region 281n through openings provided in the insulating layers 275 and 265, respectively.
  • One of the conductive layers 272a and 272b functions as a source electrode and the other functions as a drain electrode.
  • FIG. 17A shows an example in which the insulating layer 275 covers the top surface and side surfaces of the semiconductor layer 281 .
  • the conductive layers 272a and 272b are connected to the low-resistance region 281n through openings provided in the insulating layers 275 and 265, respectively.
  • the insulating layer 275 overlaps the channel formation region 281i of the semiconductor layer 281 and does not overlap the low resistance region 281n.
  • the structure shown in FIG. 17B can be manufactured.
  • an insulating layer 265 is provided to cover the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low resistance region 281n through openings in the insulating layer 265, respectively.
  • an insulating layer 268 may be provided to cover the transistor.
  • the structure of the transistor included in the display device of this embodiment There is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • a top-gate transistor structure or a bottom-gate transistor structure may be used.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 252 , 260 , and 258 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • the crystallinity of the semiconductor material used for the semiconductor layer of the transistor is not particularly limited, either.
  • a semiconductor having a crystalline region in the semiconductor) may be used.
  • a single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration of transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the bandgap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more.
  • the metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc.
  • metal oxides include indium and M, where M is gallium, aluminum, yttrium, tin, antimony, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium. , neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
  • M is preferably one or more selected from gallium, aluminum, yttrium and tin, more preferably gallium.
  • a metal oxide containing indium, M, and zinc may be hereinafter referred to as an In-M-Zn oxide.
  • In--Ga--Zn oxide In--Sn--Zn oxide, or In--Ga--Zn oxide containing Sn.
  • the semiconductor layer of the transistor may contain silicon.
  • silicon examples include amorphous silicon and crystalline silicon (low temperature polysilicon (also referred to as LTPS), single crystal silicon, etc.).
  • low-temperature polysilicon since low-temperature polysilicon has relatively high mobility and can be formed on a glass substrate, it can be suitably used for display devices.
  • a transistor whose semiconductor layer is made of low-temperature polysilicon (LTPS transistor) is used as the transistor 252 included in the driver circuit, and a transistor whose semiconductor layer is made of an oxide semiconductor is used as the transistor 260, the transistor 258, or the like provided in the pixel. (OS transistor) can be applied.
  • LTPS transistor low-temperature polysilicon
  • OS transistor oxide semiconductor
  • a structure in which an LTPS transistor and an OS transistor are combined is sometimes called an LTPO.
  • an OS transistor as a transistor or the like that functions as a switch for controlling conduction/non-conduction between wirings
  • an LTPS transistor as a transistor or the like that controls current
  • the display device shown in FIG. 17A has an OS transistor and has a structure in which organic layers are separated between light emitting elements.
  • leakage current that can flow in a transistor leakage current that can flow between adjacent light-emitting elements
  • leakage current that can flow between adjacent light-emitting elements and light-receiving elements also referred to as lateral leakage current, side leakage current, etc.
  • an observer can observe any one or more of sharpness of the image, sharpness of the image, high saturation, and high contrast ratio.
  • the leakage current that can flow in the transistor and the lateral leakage current between light-emitting elements are extremely low, so that light leakage (so-called black floating) that can occur during black display is minimized (also referred to as pure black display). ).
  • the transistor included in the circuit 464 and the transistor included in the display portion 462 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 464 may all have the same structure, or may have two or more types.
  • the plurality of transistors included in the display portion 462 may all have the same structure, or may have two or more types.
  • the insulating layer can function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • Inorganic insulating films are preferably used for the insulating layer 261, the insulating layer 262, the insulating layer 265, the insulating layer 268, and the insulating layer 275, respectively.
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the inorganic insulating films described above may be laminated and used.
  • the organic insulating film preferably has an opening near the edge of the display device 400 .
  • the organic insulating film may be formed so that the edges of the organic insulating film are located inside the edges of the display device 400 so that the organic insulating film is not exposed at the edges of the display device 400 .
  • An organic insulating film is suitable for the insulating layer 294 that functions as a planarization layer.
  • Materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, precursors of these resins, and the like.
  • a light shielding layer 419 is preferably provided on the surface of the substrate 452 on the substrate 451 side.
  • Various optical members can be arranged outside the substrate 452 (on the side opposite to the substrate 451). Examples of optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged. may
  • the connecting portion 278 is shown in FIG. 17A. At the connecting portion 278, the common electrode 413 and the wiring are electrically connected.
  • FIG. 17A shows an example in which the wiring has the same laminated structure as that of the pixel electrode.
  • the substrates 451 and 452 glass, quartz, ceramics, sapphire, resins, metals, alloys, semiconductors, etc. can be used, respectively.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting element is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 451 or the substrate 452 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyether resins are used, respectively.
  • PES resin Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
  • PES polyamide resin
  • aramid polysiloxane resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE resin polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to provide flexibility.
  • a substrate having high optical isotropy has small birefringence (it can also be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, acrylic films, and the like.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • a film having a low water absorption rate as the substrate.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 292 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • materials that can be used for conductive layers such as various wirings and electrodes that constitute display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, and molybdenum. , metals such as silver, tantalum, and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
  • conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used.
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of a silver-magnesium alloy and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) included in light-emitting elements.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a display device of one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device).
  • the display device of one embodiment of the present invention may have a structure including a light emitting/receiving element (also referred to as a light emitting/receiving device) and a light emitting element.
  • a display device of one embodiment of the present invention includes a light receiving element and a light emitting element in a light emitting/receiving portion.
  • light-emitting elements are arranged in a matrix in the light-receiving and light-emitting portion, and an image can be displayed by the light-receiving and light-emitting portion.
  • the light receiving/emitting unit has light receiving elements arranged in a matrix, and the light emitting/receiving unit has one or both of an imaging function and a sensing function.
  • the light receiving/emitting unit can be used for image sensors, touch sensors, and the like.
  • the display device of one embodiment of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of parts of the electronic device can be reduced.
  • the light-receiving element when an object reflects (or scatters) light emitted by a light-emitting element included in the light-receiving/emitting portion, the light-receiving element can detect the reflected light (or scattered light), so that the display device is dark. It is possible to capture an image and detect a touch operation even at a place.
  • a light-emitting element included in the display device of one embodiment of the present invention functions as a display element (also referred to as a display device).
  • an EL element also referred to as an EL device
  • OLED and QLED organic light-emitting substances
  • EL devices include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and substances that exhibit heat-activated delayed fluorescence (heat-activated delayed fluorescence (TADF) material) and the like.
  • LEDs such as micro LED, can also be used as a light emitting element.
  • a display device of one embodiment of the present invention has a function of detecting light using a light-receiving element.
  • the display device can capture an image using the light receiving element.
  • the display device can be used as a scanner.
  • An electronic device to which the display device of one embodiment of the present invention is applied can acquire biometric data such as fingerprints and palmprints by using the function of an image sensor. That is, the biometric authentication sensor can be incorporated in the display device.
  • the biometric authentication sensor By incorporating the biometric authentication sensor into the display device, compared to the case where the biometric authentication sensor is provided separately from the display device, the number of parts of the electronic device can be reduced, and the size and weight of the electronic device can be reduced. .
  • the display device can detect the touch operation of the object using the light receiving element.
  • a pn-type or pin-type photodiode can be used as the light receiving element.
  • the light-receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light-receiving element and generates an electric charge.
  • the amount of charge generated from the light receiving element is determined based on the amount of light incident on the light receiving element.
  • organic photodiode having a layer containing an organic compound as the light receiving element.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
  • an organic EL element (also referred to as an organic EL device) is used as the light emitting element, and an organic photodiode is used as the light receiving element.
  • An organic EL element and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL element.
  • the number of film formation processes becomes enormous.
  • the organic photodiode has many layers that can have the same structure as the organic EL element, the layers that can have the same structure can be formed at once, thereby suppressing an increase in the number of film forming processes.
  • one of the pair of electrodes can be a layer common to the light receiving element and the light emitting element.
  • at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a layer common to the light receiving element and the light emitting element. Since the light-receiving element and the light-emitting element have a common layer in this way, the number of film formations and the number of masks can be reduced, and the manufacturing steps and manufacturing cost of the display device can be reduced.
  • a display device having a light-receiving element can be manufactured using an existing display device manufacturing apparatus and manufacturing method.
  • subpixels exhibiting one color include light-receiving and emitting elements instead of light-emitting elements, and subpixels exhibiting other colors include light-emitting elements.
  • the light receiving/emitting element has both a function of emitting light (light emitting function) and a function of receiving light (light receiving function). For example, if a pixel has three sub-pixels, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light emitting/receiving element and the other sub-pixels have a light emitting element. Configuration. Therefore, the light receiving/emitting portion of the display device of one embodiment of the present invention has a function of displaying an image using both the light receiving/emitting element and the light emitting element.
  • the pixel By having the light receiving and emitting element serve as both a light emitting element and a light receiving element, the pixel can be given a light receiving function without increasing the number of sub-pixels included in the pixel. As a result, one or both of an imaging function and a sensing function can be added to the light emitting/receiving portion of the display device while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the display device. can. Therefore, in the display device of one embodiment of the present invention, the aperture ratio of the pixel can be increased and high definition can be easily achieved as compared with the case where the subpixel including the light-receiving element is provided separately from the subpixel including the light-emitting element. be.
  • the light receiving/emitting element and the light emitting element are arranged in a matrix in the light emitting/receiving portion, and an image can be displayed by the light emitting/receiving portion.
  • the light receiving/emitting unit can be used for an image sensor, a touch sensor, or the like.
  • the display device of one embodiment of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is possible to capture images and detect touch operations even in dark places.
  • the light receiving and emitting element can be produced by combining an organic EL element and an organic photodiode.
  • a light emitting/receiving element can be produced by adding an active layer of an organic photodiode to the laminated structure of the organic EL element.
  • an increase in the number of film forming processes can be suppressed by collectively forming layers that can have a common configuration with the organic EL element.
  • one of the pair of electrodes can be a layer common to the light receiving and emitting element and the light emitting element.
  • at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a common layer for the light receiving and emitting device and the light emitting device.
  • the layer included in the light receiving and emitting element may have different functions depending on whether the light receiving or emitting element functions as a light receiving element or as a light emitting element.
  • constituent elements are referred to based on their functions when the light emitting/receiving element functions as a light emitting element.
  • the display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving/light-receiving element.
  • the light emitting element and the light emitting/receiving element function as a display element.
  • the display device of this embodiment has a function of detecting light using light receiving and emitting elements.
  • the light emitting/receiving element can detect light having a shorter wavelength than the light emitted by the light emitting/receiving element itself.
  • the display device of this embodiment can capture an image using the light emitting/receiving element. Further, when the light emitting/receiving element is used as a touch sensor, the display device of this embodiment can detect a touch operation on an object using the light emitting/receiving element.
  • the light receiving and emitting element functions as a photoelectric conversion element.
  • the light emitting/receiving element can be manufactured by adding the active layer of the light receiving element to the structure of the light emitting element.
  • the active layer of a pn-type or pin-type photodiode can be used for the light receiving and emitting element.
  • organic photodiode having a layer containing an organic compound for the light emitting/receiving element.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
  • a display device that is an example of the display device of one embodiment of the present invention is described below in more detail with reference to the drawings.
  • FIG. 18A shows a schematic diagram of the display panel 200.
  • the display panel 200 has a substrate 201, a substrate 202, a light receiving element 212, a light emitting element 211R, a light emitting element 211G, a light emitting element 211B, a functional layer 203, and the like.
  • the light emitting element 211R, the light emitting element 211G, the light emitting element 211B, and the light receiving element 212 are provided between the substrates 201 and 202.
  • the light emitting element 211R, the light emitting element 211G, and the light emitting element 211B emit red (R), green (G), or blue (B) light, respectively.
  • the light-emitting element 211R, the light-emitting element 211G, and the light-emitting element 211B may be referred to as the light-emitting element 211 when not distinguished from each other.
  • the display panel 200 has a plurality of pixels arranged in a matrix.
  • One pixel has one or more sub-pixels.
  • One sub-pixel has one light-emitting element.
  • a pixel may have three sub-pixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)), or may have sub-pixels.
  • a configuration having four colors four colors of R, G, B, and white (W), or four colors of R, G, B, Y, etc.
  • the pixel has a light receiving element 212 .
  • the light-receiving elements 212 may be provided in all the pixels, or may be provided in some of the pixels.
  • one pixel may have a plurality of light receiving elements 212 .
  • FIG. 18A shows how a finger 220 touches the surface of the substrate 202 .
  • Part of the light emitted by the light emitting element 211G is reflected at the contact portion between the substrate 202 and the finger 220.
  • FIG. A part of the reflected light is incident on the light receiving element 212, so that contact of the finger 220 with the substrate 202 can be detected. That is, the display panel 200 can function as a touch panel.
  • the functional layer 203 has a circuit for driving the light emitting elements 211R, 211G, and 211B, and a circuit for driving the light receiving element 212.
  • a switch, a transistor, a capacitor, a wiring, and the like are provided in the functional layer 203 . Note that when the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212 are driven by a passive matrix method, a configuration in which switches, transistors, and the like are not provided may be employed.
  • the display panel 200 preferably has a function of detecting the fingerprint of the finger 220.
  • FIG. 18B schematically shows an enlarged view of the contact portion when the finger 220 is in contact with the substrate 202 . Also, FIG. 18B shows the light emitting elements 211 and the light receiving elements 212 arranged alternately.
  • a fingerprint is formed on the finger 220 by concave portions and convex portions. Therefore, as shown in FIG. 18B, the raised portion of the fingerprint is in contact with the substrate 202 .
  • Light reflected from a certain surface, interface, etc. includes regular reflection light and diffuse reflection light. Specularly reflected light is highly directional light whose incident angle and reflected angle are the same, and diffusely reflected light is light with low angle dependence of intensity and low directivity. The light reflected from the surface of the finger 220 is dominated by the diffusely reflected light component of the specularly reflected light and the diffusely reflected light. On the other hand, the light reflected from the interface between the substrate 202 and the atmosphere is predominantly specularly reflected.
  • the intensity of the light reflected by the contact surface or non-contact surface between the finger 220 and the substrate 202 and incident on the light receiving element 212 positioned directly below them is the sum of the specular reflection light and the diffuse reflection light. .
  • the specularly reflected light (indicated by solid line arrows) becomes dominant, and since they come into contact with each other in the convex portion, the diffusely reflected light from the finger 220 (indicated by dashed arrows) becomes dominant. Therefore, the intensity of the light received by the light receiving element 212 located directly below the concave portion is higher than that of the light receiving element 212 located directly below the convex portion. Thereby, the fingerprint of the finger 220 can be imaged.
  • a clear fingerprint image can be obtained by setting the array interval of the light receiving elements 212 to be smaller than the distance between two convex portions of the fingerprint, preferably smaller than the distance between adjacent concave portions and convex portions. Since the distance between concave and convex portions of a human fingerprint is approximately 200 ⁇ m, for example, the array interval of the light receiving elements 212 is 400 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, even more preferably 100 ⁇ m or less, and even more preferably 100 ⁇ m or less. The thickness is 50 ⁇ m or less, and 1 ⁇ m or more, preferably 10 ⁇ m or more, and more preferably 20 ⁇ m or more.
  • FIG. 18C An example of a fingerprint image captured by the display panel 200 is shown in FIG. 18C.
  • the contour of the finger 220 is indicated by a dashed line and the contour of the contact portion 221 is indicated by a dashed line within the imaging range 223 .
  • a fingerprint 222 with high contrast can be imaged due to the difference in the amount of light incident on the light receiving element 212 in the contact portion 221 .
  • the display panel 200 can also function as a touch panel and a pen tablet.
  • FIG. 18D shows a state in which the tip of the stylus 225 is in contact with the substrate 202 and slid in the direction of the dashed arrow.
  • the diffusely reflected light diffused by the contact surface of the substrate 202 and the tip of the stylus 225 is incident on the light receiving element 212 located in the portion overlapping with the contact surface.
  • a position can be detected with high accuracy.
  • FIG. 18E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200.
  • the display panel 200 can detect the position of the object to be detected such as the stylus 225 with high positional accuracy, it is possible to perform high-definition drawing in a drawing application or the like.
  • an electromagnetic induction touch pen, or the like it is possible to detect the position of even an object with high insulation.
  • Various writing utensils for example, brushes, glass pens, quill pens, etc.
  • FIGS. 18F to 18H examples of pixels applicable to the display panel 200 are shown in FIGS. 18F to 18H.
  • the pixels shown in FIGS. 18F and 18G each have a red (R) light emitting element 211R, a green (G) light emitting element 211G, a blue (B) light emitting element 211B, and a light receiving element 212.
  • the pixels have pixel circuits for driving the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212, respectively.
  • FIG. 18F is an example in which three light-emitting elements and one light-receiving element are arranged in a 2 ⁇ 2 matrix.
  • FIG. 18G shows an example in which three light-emitting elements are arranged in a row, and one horizontally long light-receiving element 212 is arranged below them.
  • the pixel shown in FIG. 18H is an example having a white (W) light emitting element 211W.
  • W white
  • four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.
  • the pixel configuration is not limited to the above, and various arrangement methods can be adopted.
  • a display panel 200A shown in FIG. 19A has light-emitting elements 211IR in addition to the configuration illustrated in FIG. 18A.
  • the light emitting element 211IR is a light emitting element that emits infrared light IR. Further, at this time, it is preferable to use an element capable of receiving at least the infrared light IR emitted by the light emitting element 211IR as the light receiving element 212 . Further, it is more preferable to use an element capable of receiving both visible light and infrared light as the light receiving element 212 .
  • the infrared light IR emitted from the light emitting element 211IR is reflected by the finger 220, and part of the reflected light enters the light receiving element 212. , the position information of the finger 220 can be obtained.
  • 19B to 19D show examples of pixels applicable to the display panel 200A.
  • FIG. 19B three light-emitting elements (light-emitting element 211R, light-emitting element 211G, and light-emitting element 211B) are arranged in a row, and below that, light-emitting element 211IR and light-receiving element 212 are arranged side by side.
  • FIG. 19C is an example in which four light emitting elements including the light emitting element 211IR are arranged in a row, and the light receiving element 212 is arranged below them.
  • FIG. 19D is an example in which three light-emitting elements (light-emitting element 211R, light-emitting element 211G, and light-emitting element 211B) and light-receiving element 212 are arranged around the light-emitting element 211IR.
  • the positions of the light emitting elements and the light emitting element and the light receiving element are interchangeable.
  • a display panel 200B shown in FIG. 20A has a light emitting element 211B, a light emitting element 211G, and a light emitting/receiving element 213R.
  • the light receiving/emitting element 213R has a function as a light emitting element that emits red (R) light and a function as a photoelectric conversion element that receives visible light.
  • FIG. 20A shows an example in which the light receiving/emitting element 213R receives green (G) light emitted by the light emitting element 211G.
  • the light receiving/emitting element 213R may receive blue (B) light emitted by the light emitting element 211B.
  • the light emitting/receiving element 213R may receive both green light and blue light.
  • the light receiving/emitting element 213R preferably receives light with a shorter wavelength than the light emitted by itself.
  • the light emitting/receiving element 213R may be configured to receive light having a longer wavelength (for example, infrared light) than the light emitted by itself.
  • the light emitting/receiving element 213R may be configured to receive light of the same wavelength as the light emitted by itself, but in that case, the light emitted by itself may also be received, resulting in a decrease in light emission efficiency. Therefore, the light emitting/receiving element 213R is preferably configured such that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.
  • the light emitted by the light receiving and emitting element is not limited to red light. Also, the light emitted by the light emitting element is not limited to the combination of green light and blue light.
  • the light emitting/receiving element may be an element that emits green or blue light and receives light of a wavelength different from the light emitted by itself.
  • the light emitting/receiving element 213R serves as both a light emitting element and a light receiving element, so that the number of elements arranged in one pixel can be reduced. Therefore, high definition, high aperture ratio, high resolution, etc. are facilitated.
  • 20B to 20I show examples of pixels applicable to the display panel 200B.
  • FIG. 20B is an example in which the light emitting/receiving element 213R, the light emitting element 211G, and the light emitting element 211B are arranged in a line.
  • FIG. 20C shows an example in which light-emitting elements 211G and light-emitting elements 211B are arranged alternately in the vertical direction, and light-receiving/emitting elements 213R are arranged horizontally.
  • FIG. 20D is an example in which three light emitting elements (light emitting element 211G, light emitting element 211B, and light emitting element 211X) and one light emitting/receiving element 213R are arranged in a 2 ⁇ 2 matrix.
  • the light-emitting element 211X is an element that emits light other than R, G, and B.
  • Light other than R, G, and B includes light such as white (W), yellow (Y), cyan (C), magenta (M), infrared light (IR), and ultraviolet light (UV).
  • the light-receiving and emitting element preferably has a function of detecting infrared light or a function of detecting both visible light and infrared light.
  • the wavelength of light detected by the light receiving and emitting element can be determined according to the application of the sensor.
  • FIG. 20E shows two pixels. A region including three elements surrounded by dotted lines corresponds to one pixel. Each pixel has a light emitting element 211G, a light emitting element 211B, and a light emitting/receiving element 213R. In the left pixel shown in FIG. 20E, the light emitting element 211G is arranged in the same row as the light emitting/receiving element 213R, and the light emitting element 211B is arranged in the same column as the light emitting/receiving element 213R. In the right pixel shown in FIG.
  • the light emitting element 211G is arranged in the same row as the light emitting/receiving element 213R, and the light emitting element 211B is arranged in the same column as the light emitting element 211G.
  • the light emitting/receiving element 213R, the light emitting element 211G, and the light emitting element 211B are repeatedly arranged in both the odd and even rows, and in each column, the odd and even rows Light-emitting elements or light-receiving/light-receiving elements of different colors are arranged.
  • FIG. 20F shows four pixels to which the pentile arrangement is applied, and two adjacent pixels have light-emitting elements or light-receiving/light-receiving elements exhibiting different combinations of two colors of light. Note that FIG. 20F shows the top surface shape of the light emitting element or the light emitting/receiving element.
  • the upper left pixel and lower right pixel shown in FIG. 20F have a light emitting/receiving element 213R and a light emitting element 211G.
  • the upper right pixel and the lower left pixel have light emitting elements 211G and 211B. That is, in the example shown in FIG. 20F, each pixel is provided with a light emitting element 211G.
  • the upper surface shape of the light emitting element and light receiving/emitting element is not particularly limited, and may be a circle, an ellipse, a polygon, a polygon with rounded corners, or the like.
  • FIG. 20F and the like show an example in which the upper surface shape of the light emitting element and the light receiving/emitting element is a square (rhombus) inclined by approximately 45 degrees.
  • the top surface shape of the light-emitting element and the light-receiving/emitting element for each color may be different from each other, or may be the same for some or all colors.
  • the sizes of the light-emitting regions (or light-receiving and emitting regions) of the light-emitting elements and light-receiving and light-receiving elements of each color may be different from each other, or may be the same for some or all colors.
  • the area of the light emitting region of the light emitting element 211G provided in each pixel may be made smaller than the light emitting region (or light receiving/emitting region) of the other elements.
  • FIG. 20G is a modification of the pixel array shown in FIG. 20F. Specifically, the configuration of FIG. 20G is obtained by rotating the configuration of FIG. 20F by 45 degrees. In FIG. 20F, one pixel is described as having two elements, but as shown in FIG. 20G, it can also be understood that one pixel is composed of four elements.
  • FIG. 20H is a modification of the pixel array shown in FIG. 20F.
  • the upper left pixel and lower right pixel shown in FIG. 20H have a light emitting/receiving element 213R and a light emitting element 211G.
  • the upper right pixel and the lower left pixel have a light emitting/receiving element 213R and a light emitting element 211B. That is, in the example shown in FIG. 20H, each pixel is provided with a light emitting/receiving element 213R. Since each pixel is provided with the light emitting/receiving element 213R, the configuration shown in FIG. 20H can perform imaging with higher definition than the configuration shown in FIG. 20F. Thereby, for example, the accuracy of biometric authentication can be improved.
  • FIG. 20I is a modification of the pixel array shown in FIG. 20H, and is a configuration obtained by rotating the pixel array by 45 degrees.
  • one pixel is composed of four elements (two light emitting elements and two light emitting/receiving elements).
  • one pixel has a plurality of light receiving and emitting elements having a light receiving function, so that an image can be captured with high definition. Therefore, the accuracy of biometric authentication can be improved.
  • the imaging resolution can be the root twice the display resolution.
  • a light-emitting element that emits blue light is preferably used as a light source. Therefore, it is preferable that the light emitting/receiving element has a function of receiving blue light. It should be noted that the present invention is not limited to this, and a light-emitting element used as a light source can be appropriately selected according to the sensitivity of the light-receiving and emitting element.
  • pixels with various arrangements can be applied to the display device of this embodiment.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • devices manufactured using metal masks or FMM are sometimes referred to as devices with MM (metal mask) structures.
  • MM metal mask
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device.
  • a white light emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
  • light-emitting devices can be broadly classified into single structures and tandem structures.
  • a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
  • the light-emitting unit preferably includes one or more light-emitting layers.
  • the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
  • a tandem structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers.
  • each light-emitting unit preferably includes one or more light-emitting layers.
  • luminance per predetermined current can be increased, and a light-emitting device with higher reliability than a single structure can be obtained.
  • the light emitting device having the SBS structure can consume less power than the white light emitting device. If it is desired to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure.
  • the white light emitting device is preferable because the manufacturing process is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be reduced or the manufacturing yield can be increased.
  • a display device of one embodiment of the present invention includes a top-emission type in which light is emitted in a direction opposite to a substrate provided with a light-emitting element, a bottom-emission type in which light is emitted toward a substrate provided with a light-emitting element, and a double-sided display device. It may be of any dual-emission type that emits light to .
  • a top emission type display device will be described as an example.
  • the light-emitting layer 383 may be used when describing items common to the light-emitting layer 383R, the light-emitting layer 383G, and the like.
  • the display device 380A shown in FIG. 21A includes a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.
  • Each light-emitting element includes a pixel electrode 371, a hole-injection layer 381, a hole-transport layer 382, a light-emitting layer 383 (light-emitting layer 383R, light-emitting layer 383G, and light-emitting layer 383B), an electron-transporting layer 384, an electron-injecting layer 385, and Common electrodes 375 are stacked in this order.
  • the light emitting element 370R has a light emitting layer 383R
  • the light emitting element 370G has a light emitting layer 383G
  • the light emitting element 370B has a light emitting layer 383B.
  • the light-emitting layer 383R has a light-emitting material that emits red light
  • the light-emitting layer 383G has a light-emitting material that emits green light
  • the light-emitting layer 383B has a light-emitting material that emits blue light.
  • the light-emitting element is an electroluminescence element that emits light toward the common electrode 375 by applying a voltage between the pixel electrode 371 and the common electrode 375 .
  • the light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 laminated in this order.
  • the light receiving element 370PD is a photoelectric conversion element that receives light incident from the outside of the display device 380A and converts it into an electric signal.
  • the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode in both the light-emitting element and the light-receiving element.
  • the light receiving element by driving the light receiving element with a reverse bias applied between the pixel electrode 371 and the common electrode 375, the light incident on the light receiving element can be detected, electric charge can be generated, and the electric charge can be extracted as a current.
  • an organic compound is used for the active layer 373 of the light receiving element 370PD.
  • the light-receiving element 370PD can share layers other than the active layer 373 with those of the light-emitting element. Therefore, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light-emitting element. Also, the light emitting element and the light receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing processes.
  • the display device 380A shows an example in which the light receiving element 370PD and the light emitting element have a common configuration except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are separately formed.
  • the configuration of the light receiving element 370PD and the light emitting element is not limited to this.
  • the light receiving element 370PD and the light emitting element may have layers that are made separately from each other. It is preferable that the light-receiving element 370PD and the light-emitting element have at least one layer (common layer) used in common. As a result, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing processes.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side of the pixel electrode 371 and the common electrode 375 .
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • a micro optical resonator (microcavity) structure is preferably applied to the light emitting element included in the display device of this embodiment. Therefore, one of the pair of electrodes of the light-emitting element preferably has an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting element has a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, and the light emitted from the light-emitting element can be enhanced.
  • the semi-transmissive/semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transparency to visible light (also referred to as a transparent electrode).
  • the light transmittance of the transparent electrode is set to 40% or more.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the near-infrared light transmittance or reflectance of these electrodes is similar to the visible light transmittance or reflectance, It is preferable to satisfy the above numerical range.
  • the light-emitting element has at least a light-emitting layer 383 .
  • layers other than the light-emitting layer 383 include a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, and an electron-blocking material.
  • a layer containing a bipolar substance a substance with high electron-transport properties and high hole-transport properties
  • the light-emitting element and the light-receiving element may have one or more layers in common among the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
  • the light-emitting element and the light-receiving element can each have one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
  • the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
  • a material with high hole-injecting properties an aromatic amine compound or a composite material containing a hole-transporting material and an acceptor material (electron-accepting material) can be used.
  • hole-transporting material a material having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • organic acceptor materials such as quinodimethane derivatives, chloranil derivatives and hexaazatriphenylene derivatives can also be used.
  • the material with high hole-injection property is a mixture of a metal oxide (typically molybdenum oxide) belonging to Groups 4 to 8 in the periodic table and an organic material. material may be used.
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • the hole-transporting layer is a layer that transports holes generated by incident light in the active layer to the anode.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. Materials are preferred.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron transport layer is a layer that transports electrons generated by incident light in the active layer to the cathode.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ electron deficient including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron transport property such as a type heteroaromatic compound can be used.
  • the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the light-emitting layer 383 is a layer containing a light-emitting substance.
  • Emissive layer 383 can have one or more luminescent materials.
  • a substance exhibiting emission colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. be done.
  • phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes and the like used as ligands can be mentioned.
  • the light-emitting layer 383 may contain one or more kinds of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
  • a bipolar material or a TADF material may also be used as one or more organic compounds.
  • the light-emitting layer 383 preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized at the same time.
  • the HOMO level (highest occupied orbital level) of the hole-transporting material is higher than the HOMO level of the electron-transporting material.
  • the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material.
  • the LUMO and HOMO levels of a material can be derived from the material's electrochemical properties (reduction and oxidation potentials) measured by cyclic voltammetry (CV) measurements.
  • Formation of the exciplex is performed by comparing, for example, the emission spectrum of the hole-transporting material, the emission spectrum of the electron-transporting material, and the emission spectrum of a mixed film in which these materials are mixed, and the emission spectrum of the mixed film is the emission spectrum of each material. It can be confirmed by observing a phenomenon that the spectrum shifts to a longer wavelength (or has a new peak on the longer wavelength side).
  • the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the transient PL of the mixed film in which these materials are mixed are compared, and the transient PL lifetime of the mixed film is compared with the transient PL of each material.
  • the transient PL described above may be read as transient electroluminescence (EL). That is, by comparing the transient EL of a hole-transporting material, the transient EL of a material having an electron-transporting property, and the transient EL of a mixed film thereof, and observing the difference in transient response, the formation of an exciplex can also be confirmed. can do.
  • EL transient electroluminescence
  • the active layer 373 contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • This embodiment mode shows an example in which an organic semiconductor is used as the semiconductor included in the active layer 373 .
  • the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Materials of the n-type semiconductor included in the active layer 373 include electron-accepting organic semiconductor materials such as fullerenes (eg, C 60 , C 70 , etc.) and fullerene derivatives.
  • Fullerenes have a soccer ball-like shape, which is energetically stable.
  • Fullerene has both deep (low) HOMO and LUMO levels. Since fullerene has a deep LUMO level, it has an extremely high electron-accepting property (acceptor property). Normally, as in benzene, if the ⁇ -electron conjugation (resonance) spreads in the plane, the electron-donating property (donor property) increases. and the electron acceptability becomes higher.
  • a high electron-accepting property is useful as a light-receiving element because charge separation occurs quickly and efficiently.
  • Both C 60 and C 70 have broad absorption bands in the visible light region, and C 70 is particularly preferable because it has a larger ⁇ -electron conjugated system than C 60 and has a wide absorption band in the long wavelength region.
  • fullerene derivatives include [6,6]-Phenyl- C71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl- C61 -butyric acid methyl ester (abbreviation: PC60BM), 1 ',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6] fullerene-C 60 (abbreviation: ICBA) and the like.
  • PC70BM [6,6]-Phenyl- C71 -butyric acid methyl ester
  • PC60BM [6,6]-Phenyl- C61 -butyric acid methyl ester
  • ICBA fullerene-C 60
  • n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: Me-PTCDI).
  • n-type semiconductor materials include 2,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl) ) bis(methan-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).
  • Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. is mentioned.
  • Materials of the p-type semiconductor included in the active layer 373 include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin Electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene are included.
  • CuPc copper
  • DBP tetraphenyldibenzoperiflanthene
  • ZnPc zinc phthalocyanine
  • Electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene are included.
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
  • materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives and the like.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • the active layer 373 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer 373 may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used for the light-emitting element and the light-receiving element, and inorganic compounds may be included.
  • the layers constituting the light-emitting element and the light-receiving element can each be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • polymer compounds such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), molybdenum oxide, and iodide Inorganic compounds such as copper (CuI) can be used.
  • Inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as the electron-transporting material or the hole-blocking material.
  • the light receiving device may have, for example, a mixed film of PEIE and ZnO.
  • Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2 functioning as a donor is added to the active layer 373.
  • Polymer compounds such as 1,3-diyl]]polymer (abbreviation: PBDB-T) or PBDB-T derivatives can be used.
  • PBDB-T 1,3-diyl]]polymer
  • PBDB-T derivatives a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • a display device 380B shown in FIG. 21B differs from the display device 380A in that the light receiving element 370PD and the light emitting element 370R have the same configuration.
  • the light receiving element 370PD and the light emitting element 370R have the active layer 373 and the light emitting layer 383R in common.
  • the light-receiving element 370PD has a common configuration with a light-emitting element that emits light with a longer wavelength than the light to be detected.
  • the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting elements 370R and 370G.
  • the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.
  • the number of film forming processes and the number of masks are reduced compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have layers that are separately formed. can be reduced. Therefore, manufacturing steps and manufacturing costs of the display device can be reduced.
  • the margin for misalignment can be narrowed compared to a structure in which the light receiving element 370PD and the light emitting element 370R have separate layers. .
  • the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. This can extend the life of the light emitting element.
  • the display device can express high luminance. Also, it is possible to increase the definition of the display device.
  • the light-emitting layer 383R has a light-emitting material that emits red light.
  • the active layer 373 comprises an organic compound that absorbs light of wavelengths shorter than red (eg, one or both of green light and blue light).
  • the active layer 373 preferably contains an organic compound that hardly absorbs red light and absorbs light with a wavelength shorter than that of red light. As a result, red light is efficiently extracted from the light emitting element 370R, and the light receiving element 370PD can detect light with a shorter wavelength than red light with high accuracy.
  • the display device 380B an example in which the light emitting element 370R and the light receiving element 370PD have the same configuration is shown, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers with different thicknesses.
  • a display device 380C shown in FIGS. 22A and 22B has a light receiving/emitting element 370SR, a light emitting element 370G, and a light emitting element 370B which emit red (R) light and have a light receiving function.
  • the display device 380A and the like can be referred to.
  • the light emitting/receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 laminated in this order. and have.
  • the light emitting/receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.
  • FIG. 22A shows a case where the light emitting/receiving element 370SR functions as a light emitting element.
  • FIG. 22A shows an example in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light receiving/emitting element 370SR emits red light.
  • FIG. 22B shows a case where the light emitting/receiving element 370SR functions as a light receiving element.
  • FIG. 22B shows an example in which the light receiving/emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.
  • the light emitting element 370B, the light emitting element 370G, and the light emitting/receiving element 370SR each have a pixel electrode 371 and a common electrode 375.
  • a case where the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode will be described as an example.
  • the light emitting/receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, thereby detecting light incident on the light emitting/receiving element 370SR, generating electric charge, and extracting it as a current. .
  • the light emitting/receiving element 370SR can be said to have a structure in which an active layer 373 is added to the light emitting element.
  • the light emitting/receiving element 370SR can be formed in parallel with the formation of the light emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light emitting element.
  • the light emitting element and the light emitting/receiving element can be formed on the same substrate. Therefore, one or both of an imaging function and a sensing function can be imparted to the display portion without significantly increasing the number of manufacturing steps.
  • the stacking order of the light emitting layer 383R and the active layer 373 is not limited. 22A and 22B show an example in which an active layer 373 is provided on the hole transport layer 382 and a light emitting layer 383R is provided on the active layer 373. FIG. The stacking order of the light emitting layer 383R and the active layer 373 may be changed.
  • the light receiving and emitting element may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
  • the light emitting/receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side.
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • each layer constituting the light emitting/receiving element is the same as the functions and materials of the layers constituting the light emitting element and the light receiving element, so detailed description thereof will be omitted.
  • 22C to 22G show examples of laminated structures of light receiving and emitting elements.
  • the light emitting and receiving element shown in FIG. 22C includes a first electrode 377, a hole injection layer 381, a hole transport layer 382, a light emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a second electrode. 378.
  • FIG. 22C is an example in which a light emitting layer 383R is provided on the hole transport layer 382 and an active layer 373 is laminated on the light emitting layer 383R.
  • the active layer 373 and the light emitting layer 383R may be in contact with each other.
  • a buffer layer is preferably provided between the active layer 373 and the light emitting layer 383R.
  • the buffer layer preferably has hole-transporting properties and electron-transporting properties.
  • at least one of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and the like can be used as the buffer layer.
  • FIG. 22D shows an example of using a hole transport layer 382 as a buffer layer.
  • the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light emitting/receiving element having a buffer layer between the active layer 373 and the light emitting layer 383R can obtain high light emitting efficiency.
  • FIG. 22E is an example having a layered structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light emitting layer 383R are layered on the hole injection layer 381 in this order.
  • the hole transport layer 382-2 functions as a buffer layer.
  • the hole transport layer 382-1 and the hole transport layer 382-2 may contain the same material or may contain different materials. Further, the above layer that can be used for the buffer layer may be used instead of the hole-transport layer 382-2. Also, the positions of the active layer 373 and the light emitting layer 383R may be exchanged.
  • the light emitting/receiving element shown in FIG. 22F differs from the light emitting/receiving element shown in FIG. 22A in that it does not have a hole transport layer 382 .
  • the light receiving and emitting device may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
  • the light emitting/receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.
  • the light emitting/receiving element shown in FIG. 22G differs from the light emitting/receiving element shown in FIG. 22A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves both as a light emitting layer and an active layer.
  • Layers that serve as both a light-emitting layer and an active layer include, for example, an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R.
  • a layer containing three materials can be used.
  • the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor and the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance do not overlap each other. More preferably away.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a pixel can have a structure in which a plurality of types of sub-pixels having light-emitting devices emitting different colors are provided.
  • a pixel can be configured to have three types of sub-pixels.
  • the three sub-pixels include three-color sub-pixels of red (R), green (G), and blue (B), and three-color sub-pixels of yellow (Y), cyan (C), and magenta (M). is mentioned.
  • the pixel may have four types of sub-pixels. Examples of the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y sub-pixels.
  • the arrangement of sub-pixels includes, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, shapes with rounded corners of these polygons, ellipses, and circles.
  • the top surface shape of the sub-pixel here corresponds to the top surface shape of the light emitting region of the light emitting device.
  • a display device having a light-emitting device and a light-receiving device in a pixel, since the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
  • the pixels shown in FIGS. 23A, 23B, and 23C have sub-pixels G, sub-pixels B, sub-pixels R, and sub-pixels PS.
  • a stripe arrangement is applied to the pixels shown in FIG. 23A.
  • a matrix arrangement is applied to the pixels shown in FIG. 23B.
  • the pixel arrangement shown in FIG. 23C has a configuration in which three sub-pixels (sub-pixel R, sub-pixel G, and sub-pixel PS) are vertically arranged next to one sub-pixel (sub-pixel B).
  • the pixels shown in FIGS. 23D, 23E, and 23F have sub-pixels G, sub-pixels B, sub-pixels R, sub-pixels IR, and sub-pixels PS.
  • FIGS. 23D, 23E, and 23F show examples in which one pixel is provided over two rows.
  • Three sub-pixels (sub-pixel G, sub-pixel B, sub-pixel R) are provided in the upper row (first row), and two sub-pixels (one sub-pixel) are provided in the lower row (second row).
  • a pixel PS and one sub-pixel IR) are provided.
  • FIG. 23D vertically long sub-pixels G, sub-pixels B, and sub-pixels R are arranged horizontally, and sub-pixels PS and horizontally long sub-pixels IR are horizontally arranged below them.
  • FIG. 23E two horizontally long sub-pixels G and R are arranged in the vertical direction, vertically long sub-pixels B are arranged horizontally, and horizontally long sub-pixels IR and vertically long sub-pixels PS are arranged below them. are arranged side by side.
  • FIG. 23F vertically long sub-pixels R, sub-pixels G, and sub-pixels B are arranged horizontally, and horizontally long sub-pixels IR and vertically long sub-pixels PS are horizontally arranged below them.
  • 23E and 23F show the case where the area of the sub-pixel IR is the largest and the area of the sub-pixel PS is approximately the same as that of the sub-pixel R, sub-pixel G, and sub-pixel B.
  • the sub-pixel R has a light-emitting device that emits red light.
  • Sub-pixel G has a light-emitting device that emits green light.
  • Sub-pixel B has a light-emitting device that emits blue light.
  • Sub-pixel IR has a light-emitting device that emits infrared light.
  • the sub-pixel PS has a light receiving device.
  • the wavelength of light detected by the sub-pixel PS is not particularly limited, but the light-receiving device included in the sub-pixel PS is sensitive to the light emitted by the light-emitting device included in the sub-pixel R, sub-pixel G, sub-pixel B, or IR. It is preferable to have For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red, and light in an infrared wavelength range.
  • the light receiving area of the sub-pixel PS is smaller than the light emitting area of the other sub-pixels.
  • the sub-pixels PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), or faces.
  • the sub-pixel PS can be used for a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, a hover touch sensor, a non-contact sensor, or a touchless sensor).
  • a touch sensor also called a direct touch sensor
  • a near-touch sensor also called a hover sensor, a hover touch sensor, a non-contact sensor, or a touchless sensor
  • the sub-pixel PS preferably detects infrared light. This enables touch detection even in dark places.
  • the touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
  • a touch sensor can detect an object by direct contact between the display device and the object.
  • the near-touch sensor can detect the object even if the object does not touch the display device.
  • the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
  • the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
  • the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • the sub-pixels PS are provided in all the pixels included in the display device.
  • the sub-pixel PS is used for a touch sensor or a near-touch sensor, high accuracy is not required as compared to the case of capturing an image of a fingerprint or the like. All you have to do is By making the number of sub-pixels PS included in the display device smaller than the number of sub-pixels R and the like, the detection speed can be increased.
  • FIG. 23G shows an example of a pixel circuit of a sub-pixel having a light receiving device
  • FIG. 23H shows an example of a pixel circuit of a sub-pixel having a light emitting device.
  • a pixel circuit PIX1 shown in FIG. 23G has a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitive element C2.
  • a light receiving device PD a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitive element C2.
  • an example using a photodiode is shown as the light receiving device PD.
  • the light receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and drain of the transistor M11.
  • the transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13.
  • the transistor M12 has a gate electrically connected to the wiring RES and the other of the source and the drain electrically connected to the wiring V2.
  • One of the source and the drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source and the drain is electrically connected to one of the source and the drain of the transistor M14.
  • the transistor M14 has a gate electrically connected to the wiring SE and the other of the source and the drain electrically connected to the wiring OUT1.
  • a constant potential is supplied to each of the wiring V1, the wiring V2, and the wiring V3.
  • the wiring V2 is supplied with a potential higher than that of the wiring V1.
  • the transistor M12 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M13 to the potential supplied to the wiring V2.
  • the transistor M11 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving device PD.
  • the transistor M13 functions as an amplifying transistor that outputs according to the potential of the node.
  • the transistor M14 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading an output corresponding to the potential of the node by an external circuit connected to the wiring OUT1.
  • a pixel circuit PIX2 shown in FIG. 23H has a light emitting device EL, a transistor M15, a transistor M16, a transistor M17, and a capacitive element C3.
  • a light emitting device EL an example using a light-emitting diode is shown as the light-emitting device EL.
  • an organic EL element it is preferable to use an organic EL element as the light emitting device EL.
  • the transistor M15 has a gate electrically connected to the wiring VG, one of the source and the drain electrically connected to the wiring VS, and the other of the source and the drain connected to one electrode of the capacitor C3 and the gate of the transistor M16. Electrically connected to the One of the source and drain of the transistor M16 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light emitting device EL and one of the source and drain of the transistor M17.
  • the transistor M17 has a gate electrically connected to the wiring MS and the other of the source and the drain electrically connected to the wiring OUT2. A cathode of the light emitting device EL is electrically connected to the wiring V5.
  • a constant potential is supplied to each of the wiring V4 and the wiring V5.
  • the anode side of the light emitting device EL can be at a higher potential and the cathode side can be at a lower potential than the anode side.
  • the transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2.
  • the transistor M16 functions as a driving transistor that controls the current flowing through the light emitting device EL according to the potential supplied to its gate. When the transistor M15 is on, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission luminance of the light emitting device EL can be controlled according to the potential.
  • the transistor M17 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M16 and the light emitting device EL to the outside through the wiring OUT2.
  • transistor M11 the transistor M12, the transistor M13, and the transistor M14 included in the pixel circuit PIX1
  • metal is added to semiconductor layers in which channels are formed.
  • a transistor including an oxide (oxide semiconductor) is preferably used.
  • a transistor that uses metal oxide which has a wider bandgap than silicon and a lower carrier density, can achieve extremely low off-current. Therefore, the small off-state current can hold charge accumulated in a capacitor connected in series with the transistor for a long time. Therefore, transistors including an oxide semiconductor are preferably used particularly for the transistor M11, the transistor M12, and the transistor M15 which are connected in series to the capacitor C2 or the capacitor C3. Further, by using a transistor including an oxide semiconductor for other transistors, the manufacturing cost can be reduced.
  • the off current value of the OS transistor per 1 ⁇ m channel width at room temperature is 1 aA (1 ⁇ 10 ⁇ 18 A) or less, 1 zA (1 ⁇ 10 ⁇ 21 A) or less, or 1 yA (1 ⁇ 10 ⁇ 24 A).
  • the off current value of the Si transistor per 1 ⁇ m channel width at room temperature is 1 fA (1 ⁇ 10 ⁇ 15 A) or more and 1 pA (1 ⁇ 10 ⁇ 12 A) or less. Therefore, it can be said that the off-state current of the OS transistor is about ten digits lower than the off-state current of the Si transistor.
  • transistors in which silicon is used as a semiconductor in which a channel is formed can be used for the transistors M11 to M17.
  • highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field-effect mobility can be achieved and high-speed operation is possible.
  • At least one of the transistors M11 to M17 may be formed using an oxide semiconductor, and the rest may be formed using silicon.
  • transistors are shown as n-channel transistors in FIGS. 23G and 23H, p-channel transistors can also be used.
  • the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are mixed in one region and periodically arranged.
  • the effective area occupied by each pixel circuit can be reduced, and a high-definition light receiving section or display section can be realized.
  • the amount of current flowing through the light emitting device EL included in the pixel circuit When increasing the luminance of the light emitting device EL included in the pixel circuit, it is necessary to increase the amount of current flowing through the light emitting device EL. For this purpose, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Since the OS transistor has a higher breakdown voltage between the source and the drain than the Si transistor, a high voltage can be applied between the source and the drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light emitting device EL can be increased, and the light emission luminance of the light emitting device EL can be increased.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in the current between the source and the drain with respect to the change in the voltage between the gate and the source compared to the Si transistor. Therefore, by applying an OS transistor as the drive transistor included in the pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source, and the amount of current flowing in the light emitting device can be controlled. can do. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even if the current-voltage characteristics of the light-emitting device including the EL material are varied. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • the display device of one embodiment of the present invention can have a variable refresh rate.
  • the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 0.01 Hz to 240 Hz) according to the content displayed on the display device.
  • driving that reduces the power consumption of the display device by driving with a reduced refresh rate may be referred to as idling stop (IDS) driving.
  • IDS idling stop
  • the driving frequency of the touch sensor or the near touch sensor may be changed according to the refresh rate.
  • the drive frequency of the touch sensor or the near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near-touch sensor can be increased.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • An electronic device of this embodiment includes a display device of one embodiment of the present invention.
  • the display device of one embodiment of the present invention can easily have high definition, high resolution, and large size. Therefore, the display device of one embodiment of the present invention can be used for display portions of various electronic devices.
  • the display device of one embodiment of the present invention can be manufactured at low cost, the manufacturing cost of the electronic device can be reduced.
  • Examples of electronic devices include electronic devices with relatively large screens such as televisions, desktop or notebook personal computers, computer monitors, digital signage, and large game machines (e.g. pachinko machines). , digital cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, personal digital assistants, sound reproduction devices, and the like.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, devices for VR (Virtual Reality) such as head-mounted displays, and devices for AR (Augmented Reality) such as eyeglasses.
  • wearable devices such as wristwatches and bracelets
  • VR Virtual Reality
  • AR Augmented Reality
  • a wearable device that can be attached to a part is exemplified.
  • Wearable devices also include devices for SR (Substitutional Reality) and devices for MR (Mixed Reality).
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K2K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K4K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K2K, 8K4K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, and 5000 ppi or more. is more preferable, and 7000 ppi or more is even more preferable.
  • the electronic device of this embodiment can be incorporated along the inner wall or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
  • the electronic device of this embodiment may have an antenna.
  • An image, information, or the like can be displayed on the display portion by receiving a signal with the antenna.
  • the antenna may be used for contactless power transmission.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display unit, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • An electronic device 6500 shown in FIG. 24A is a mobile information terminal that can be used as a smartphone.
  • the electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 24B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • a flexible display device of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the display portion 6502, an electronic device with a narrow frame can be realized.
  • FIG. 25A An example of a television device is shown in FIG. 25A.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television device 7100 shown in FIG. 25A can be performed using operation switches provided in the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel included in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication is performed. is also possible.
  • FIG. 25B shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 25C and 25D An example of digital signage is shown in FIGS. 25C and 25D.
  • a digital signage 7300 shown in FIG. 25C includes a housing 7301, a display unit 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.
  • FIG. 25D shows a digital signage 7400 attached to a cylindrical post 7401.
  • a digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 25C and 25D.
  • the wider the display unit 7000 the more information can be provided at once.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or moving images be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display portion 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operation means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • FIG. 26A is a diagram showing the appearance of the camera 8000 with the finder 8100 attached.
  • a camera 8000 has a housing 8001, a display unit 8002, an operation button 8003, a shutter button 8004, and the like.
  • a detachable lens 8006 is attached to the camera 8000 .
  • lens 8006 and housing 8001 may be integrated.
  • the camera 8000 can capture an image by pressing the shutter button 8004 or by touching the display unit 8002 that functions as a touch panel.
  • a housing 8001 has a mount having electrodes, and can be connected to a finder 8100, a strobe device, and the like.
  • the viewfinder 8100 has a housing 8101, a display section 8102, buttons 8103, and the like.
  • the housing 8101 is attached to the camera 8000 by mounts that engage the mounts of the camera 8000 .
  • a viewfinder 8100 can display an image or the like received from the camera 8000 on a display portion 8102 .
  • the button 8103 has a function as a power button or the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 8002 of the camera 8000 and the display portion 8102 of the viewfinder 8100 .
  • the camera 8000 having a built-in finder may also be used.
  • FIG. 26B is a diagram showing the appearance of the head mounted display 8200.
  • FIG. 26B is a diagram showing the appearance of the head mounted display 8200.
  • a head-mounted display 8200 has a mounting section 8201, a lens 8202, a main body 8203, a display section 8204, a cable 8205, and the like.
  • a battery 8206 is built in the mounting portion 8201 .
  • a cable 8205 supplies power from a battery 8206 to the main body 8203 .
  • a main body 8203 includes a wireless receiver or the like, and can display received video information on a display portion 8204 .
  • the main body 8203 is equipped with a camera, and information on the movement of the user's eyeballs or eyelids can be used as input means.
  • the mounting section 8201 may be provided with a plurality of electrodes capable of detecting a current flowing along with the movement of the user's eyeballs at a position where it touches the user, and may have a function of recognizing the line of sight. Moreover, it may have a function of monitoring the user's pulse based on the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc., and has a function of displaying the biological information of the user on the display unit 8204, The display portion 8204 may have a function of changing an image displayed on the display portion 8204 .
  • the display device of one embodiment of the present invention can be applied to the display portion 8204 .
  • FIG. 26C to 26E are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • the user can visually recognize the display on the display unit 8302 through the lens 8305 .
  • three-dimensional display or the like using parallax can be performed.
  • the configuration is not limited to the configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided and one display portion 8302 may be arranged for one eye of the user.
  • the display device of one embodiment of the present invention can be applied to the display portion 8302 .
  • the display device of one embodiment of the present invention can also achieve extremely high definition. For example, as shown in FIG. 26E, even when a lens 8305 is used to magnify and visually recognize the display, it is difficult for the user to visually recognize the pixels. In other words, the display portion 8302 can be used to allow the user to view highly realistic images.
  • FIG. 26F is a diagram showing the appearance of a goggle-type head-mounted display 8400.
  • the head mounted display 8400 has a pair of housings 8401, a mounting section 8402, and a cushioning member 8403.
  • a display portion 8404 and a lens 8405 are provided in the pair of housings 8401, respectively.
  • the user can visually recognize the display unit 8404 through the lens 8405.
  • the lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's visual acuity.
  • the display portion 8404 is preferably square or horizontally long rectangular. This makes it possible to enhance the sense of presence.
  • the display device of one embodiment of the present invention can be applied to the display portion 8404 .
  • the mounting part 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off.
  • a part of the mounting portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. As a result, you can enjoy video and audio without the need for separate audio equipment such as earphones and speakers.
  • the housing 8401 may have a function of outputting audio data by wireless communication.
  • the mounting part 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). Since the cushioning member 8403 is in close contact with the user's face, it is possible to prevent light leakage and enhance the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that the cushioning member 8403 comes into close contact with the user's face when the head mounted display 8400 is worn by the user. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used.
  • a member that touches the user's skin is preferably detachable for easy cleaning or replacement.
  • the electronic device shown in FIGS. 27A to 27F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including power switches or operation switches), connection terminals 9006, sensors 9007 (force, displacement, position, Speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays sensing, detecting, or measuring functions), a microphone 9008, and the like.
  • the electronic devices shown in FIGS. 27A to 27F have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • the display device of one embodiment of the present invention can be applied to the display portion 9001 .
  • FIGS. 27A to 27F Details of the electronic devices shown in FIGS. 27A to 27F will be described below.
  • FIG. 27A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 27A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone, etc., title of e-mail, SNS, etc., sender name, date and time, remaining battery power, strength of antenna reception, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 27B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 27C is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • Hands-free communication is also possible by allowing the portable information terminal 9200 to communicate with a headset capable of wireless communication, for example.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 27D to 27F are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 27D is a perspective view of the portable information terminal 9201 in an unfolded state
  • FIG. 27F is a folded state
  • FIG. 27E is a perspective view of a state in the middle of changing from one of FIGS. 27D and 27F to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/IB2022/058551 2021-09-24 2022-09-12 表示装置 Ceased WO2023047239A1 (ja)

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CN202280063648.6A CN117980978A (zh) 2021-09-24 2022-09-12 显示装置
JP2023549167A JP7843766B2 (ja) 2021-09-24 2022-09-12 表示装置
US18/693,773 US20240389442A1 (en) 2021-09-24 2022-09-12 Display Apparatus
KR1020247011885A KR20240072182A (ko) 2021-09-24 2022-09-12 표시 장치
DE112022004557.4T DE112022004557T5 (de) 2021-09-24 2022-09-12 Anzeigevorrichtung

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117750841A (zh) * 2023-11-14 2024-03-22 惠科股份有限公司 柔性显示面板及其制备方法、柔性显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190237521A1 (en) * 2018-01-30 2019-08-01 Samsung Display Co., Ltd. Display device
WO2020021399A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2020053692A1 (ja) * 2018-09-14 2020-03-19 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
CN111341808A (zh) * 2020-03-05 2020-06-26 京东方科技集团股份有限公司 一种显示基板及其制备方法、可见光通信装置
WO2021009638A1 (ja) * 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 表示装置
JP2021039342A (ja) * 2019-08-29 2021-03-11 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2021074738A1 (ja) * 2019-10-17 2021-04-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102079188B1 (ko) 2012-05-09 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190237521A1 (en) * 2018-01-30 2019-08-01 Samsung Display Co., Ltd. Display device
WO2020021399A1 (ja) * 2018-07-27 2020-01-30 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2020053692A1 (ja) * 2018-09-14 2020-03-19 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2021009638A1 (ja) * 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 表示装置
JP2021039342A (ja) * 2019-08-29 2021-03-11 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
WO2021074738A1 (ja) * 2019-10-17 2021-04-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
CN111341808A (zh) * 2020-03-05 2020-06-26 京东方科技集团股份有限公司 一种显示基板及其制备方法、可见光通信装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117750841A (zh) * 2023-11-14 2024-03-22 惠科股份有限公司 柔性显示面板及其制备方法、柔性显示装置

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US20240389442A1 (en) 2024-11-21
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DE112022004557T5 (de) 2024-08-22
JP7843766B2 (ja) 2026-04-10
CN117980978A (zh) 2024-05-03

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