WO2023045583A1 - 雾化芯制备方法 - Google Patents

雾化芯制备方法 Download PDF

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Publication number
WO2023045583A1
WO2023045583A1 PCT/CN2022/110238 CN2022110238W WO2023045583A1 WO 2023045583 A1 WO2023045583 A1 WO 2023045583A1 CN 2022110238 W CN2022110238 W CN 2022110238W WO 2023045583 A1 WO2023045583 A1 WO 2023045583A1
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layer
atomizing core
heating layer
heating
experimental example
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French (fr)
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邱伟华
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Vivant Dongguan Intelligent Technology Co Ltd
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Vivant Dongguan Intelligent Technology Co Ltd
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    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46—Shape or structure of electric heating means
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/50—Control or monitoring
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/70—Manufacture

Definitions

  • the invention belongs to the technical field of atomization, and in particular relates to a method for preparing an atomization core.
  • the thin-film heating atomizing core used in the aerosol generating device usually attaches a heating film to the atomizing surface of porous ceramics, and heats the aerosol-forming substrate on the atomizing surface through the heating film, so that the aerosol forms a matrix mist turned into smoke.
  • the current thin-film heating atomizing core has the problems of poor continuity and difficult adjustment and control of thickness, which easily leads to poor resistance resistance stability of the thin-film heating layer, which in turn leads to poor heating uniformity of the thin-film heating atomizing core.
  • the purpose of the embodiments of the present invention is to provide a method for preparing an atomizing core that improves and enhances the stability of the resistance value of the heating layer.
  • the technical solution adopted by the present invention is to provide a method for preparing an atomizing core, which includes the following steps:
  • An annealing and aging process is adopted to perform annealing heat treatment on the atomization core.
  • the temperature of the annealing heat treatment is 500-800° C.
  • the time of the annealing heat treatment is 5-60 minutes.
  • the annealing heat treatment process of the atomization core is carried out in a protective gas atmosphere.
  • the preparation method of the atomizing core further includes the step of energizing and aging treatment.
  • the step of energizing and aging treatment includes: adopting the energizing and aging process, supplying power to the atomizing core after the annealing heat treatment, and electrifying the atomizing core after the annealing heat treatment. After heating, the microstructure of the heating layer is subjected to aging treatment.
  • the energizing power is 6-8W
  • the energizing time is 1-20 minutes.
  • the energization aging treatment process of the atomizing core is carried out in an atmospheric atmosphere.
  • a DC stabilized voltage power supply is used to supply power to the atomizing core.
  • the conductive material is a nickel-chromium alloy material
  • the nickel-chromium alloy material is deposited through the thin film deposition process to form a nickel-chromium alloy heating layer, and the deposition thickness of the nickel-chromium alloy heating layer is 1-5 ⁇ m.
  • the mass ratio of Ni/(Ni+Cr) in the nickel-chromium alloy material is 0.2-0.9.
  • the porosity of the porous ceramic substrate is 30%-80%, and the pore diameter of the porous ceramic substrate is 10-30 ⁇ m.
  • a conductive material is formed on the outer surface of the porous ceramic substrate through a thin film deposition process to form an atomizing core with a heating layer on the surface;
  • the heating layer of the chemical core is annealed to make the crystal grains in the microstructure of the heating layer grow up, make the heating layer more compact, and reduce the microscopic defects of the heating layer.
  • the atomizing core can improve and increase the stability of the resistance of the heating layer, enhance the electrical stability of the heating layer, and then make the heating layer more uniform, and prevent the local temperature of the atomizing core from being too high , can have a good atomization effect on aerosol-forming substrates.
  • Fig. 1 is a schematic cross-sectional structure diagram of an atomizing core provided by Embodiment 1 of the present invention
  • Fig. 2 is another schematic cross-sectional structure diagram of the atomizing core provided by Embodiment 1 of the present invention.
  • Fig. 3 is a schematic top view structure diagram of the atomization core provided by Embodiment 2 of the present invention.
  • Fig. 4 is a schematic cross-sectional structure diagram of the atomization core provided by Embodiment 2 of the present invention.
  • Fig. 5 is a schematic cross-sectional structure diagram of a porous substrate provided by Embodiment 2 of the present invention.
  • Fig. 6 is a schematic cross-sectional structure diagram of the atomization core provided by the third embodiment of the present invention.
  • Fig. 7 is a schematic cross-sectional structure diagram of a porous substrate provided by Embodiment 3 of the present invention.
  • Fig. 8 is a schematic cross-sectional structure diagram of the atomization core provided by Embodiment 4 of the present invention.
  • Fig. 9 is a comparison chart of the resistance values of the atomizing cores prepared in Example 1 to Example 15 of the present invention in a cycle test;
  • Fig. 10 is a comparison chart of the resistance values of atomizing cores prepared in Example 2, Example 5, Example 8, Example 11 and Example 14 of the present invention in cycle tests;
  • Fig. 11 is a comparison chart of resistance values of atomizing cores prepared in Examples 1 to 3 of the present invention in cycle tests;
  • Fig. 12 is a comparison chart of the resistance values of the atomizing cores prepared in Example 2 and Example 4 to Example 6 of the present invention in a cycle test;
  • Fig. 13 is a comparison chart of the resistance values of the atomizing cores prepared in Example 5 and Example 7 to Example 9 of the present invention in a cycle test;
  • Fig. 14 is a comparison chart of the resistance values of the atomizing cores prepared in Example 8 and Example 10 to Example 12 of the present invention in a cycle test;
  • Fig. 15 is a comparison chart of the resistance values of the atomizing cores prepared in Example 11 and Example 13 to Example 15 of the present invention in a cycle test.
  • Porous ceramic substrate 11-atomization surface; 11a-first region; 11b-second region; 11c-first surface; 11d-second surface; 11e-third surface; 11f-first transition surface; 11g-second Two transition surfaces; 12-protrusion; 13-first depression; 14-second depression; 2-transition layer;
  • 3-heating layer 31-heating part; 32-first connecting part; 321-first side part; 322-first joint part; 33-second connecting part; 331-second side part; 332-second joint department;
  • the atomizing core provided by Embodiment 1 of the present invention is used in an atomizer, which can generate heat under the electric drive of the power supply device of the aerosol generating device, and heat and atomize the aerosol-forming substrate in the liquid storage chamber of the atomizer to form The smoke is for the user to inhale to achieve the effect of simulating smoking.
  • the atomizing core provided by Embodiment 1 of the present invention includes a porous base 1 and a heat generating layer 3 . At least part of the outer surface of the porous substrate 1 is formed with an atomizing surface 11 .
  • the porous substrate 1 has a capillary adsorption microporous structure inside, the porous substrate 1 can absorb and store aerosols through the microporous structure to form a matrix, and the adsorbed and stored aerosol-formed matrix can be continuously transported to the atomizing surface 11 through the microporous structure .
  • the heat generating layer 3 is formed on at least part of the atomizing surface 11 .
  • the heating layer 3 When the atomizing core is in use, power is supplied to the atomizing core through the power supply device of the aerosol generating device, the heating layer 3 generates heat after being energized, and the heat is transmitted to the aerosol forming matrix on the atomizing surface 11, so that the aerosol forming matrix Atomization forms smoke that can be inhaled by the user.
  • the porous substrate 1 can also be a porous material capable of absorbing liquid, such as porous ceramics and porous metal.
  • the porous substrate 1 is porous ceramics; further, in some of the more specific embodiments, the porosity of the porous substrate 1 is 30%-80%, and the pore diameter of the porous substrate 1 is 10-30 ⁇ m.
  • the heating layer 3 is a metal layer or an alloy layer with stable chemical properties and good electrical and thermal conductivity, and the heating layer 3 is a copper layer, an iron layer, a nickel layer, a chromium layer, a gold layer, a silver layer, or a platinum layer. , palladium layer, molybdenum layer and other metal layers and gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, silver-palladium alloy layer, silver-platinum alloy layer, palladium-copper alloy layer, palladium-silver alloy layer, nickel-chromium alloy layer at least any of the .
  • the heating layer 3 is a nickel-chromium alloy layer.
  • the nickel-chromium alloy layer has good thermal performance, and the price of the nickel-chromium alloy layer is higher than that of precious metal layers such as gold layer, silver layer, platinum layer, palladium layer, or gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, and silver-palladium alloy layer. , silver-platinum alloy layer, palladium-copper alloy layer, palladium-silver alloy layer and other precious metal alloy layers are cheap.
  • the heating layer 3 is a nickel-chromium alloy layer, and the mass ratio of Ni/(Ni+Cr) is 0.2-0.9. According to the resistance calculation formula, the thickness of the heating layer 3 determines the resistance value of the heating layer 3.
  • the thickness of the heating layer 3 is adjusted and controlled to achieve the purpose of adjusting the resistance value of the heating layer 3 .
  • the inventor found that: when the thickness of the heating layer 3 is too thin, the heating layer 3 of the thin layer structure is relatively loose and the continuity is not good, which affects the stability of the resistance value of the heating layer 3 , the heat generating layer 3 is relatively easy to be oxidized or carbonized at high temperature; the thicker the heat generating layer 3 is, the continuity and compactness of the heat generating layer 3 of the thin layer structure will also increase accordingly, so that the resistance to oxidation or carbonization of the heat generating layer 3 The ability is greatly enhanced, thereby enhancing the stability of the resistance of the heating layer 3.
  • the formation time of the heat generating layer 3 is longer, thereby greatly reducing the production efficiency;
  • the microstructure is destroyed, affecting the stability of the resistance value of the heating layer 3 .
  • the resistance of the heating layer 3 is too low, there is a potential safety hazard of short circuit overload of the heating layer 3, and the resistance of the heating layer 3 is too high, there is a problem that the required heating power cannot be reached, so the common resistance of the heating layer 3 is 0.8 ⁇ 2 ⁇ .
  • the heat generation is set to be 1 ⁇ 5 ⁇ m.
  • the heating layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 ⁇ m, so that the resistance stability of the heating layer 3 is improved, and the resistance of the heating layer 3 is within the common resistance range , and the formation time of the heating layer 3 is moderate, thereby improving the resistance stability of the atomizing core, the heating power of the atomizing core is relatively large, the atomizing effect of the atomizing core is good, and the manufacturing cost of the atomizing core is controllable.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process. Because the heating area of the atomizing core is larger and the heating is more uniform, there will be no local overheating phenomenon, which is beneficial to improve the uniformity of heating of the aerosol-forming substrate, thereby improving the atomization effect.
  • the heating layer 3 is formed by depositing the magnetron sputtering process, the heating layer 3 is a nickel-chromium alloy layer, the target power density of the magnetron sputtering process is 5-15W/cm 2 , and the sputtering pressure is 0.1-0.3Pa, and the sputtering time is 30-90min.
  • a nickel-chromium alloy layer with a thickness of 1-5 ⁇ m is deposited on at least part of the atomized surface 11 of the porous substrate 1 by magnetron sputtering, and the nickel-chromium alloy layer forms the heating layer 3 .
  • the formation process of the heating layer 3 generally includes: 1. Initial formation of the island: the gaseous target material reaches the surface of the porous substrate 1, adheres and condenses to form some uniform and fine The moving atomic group, the in-situ group is called "island”; 2. The number of islands is saturated: the “island” continuously accepts new deposited atoms, and gradually grows up by merging with other small “islands", and the number of islands quickly reaches saturation; 3. Island growth and nucleation: while small “islands” merge continuously, new small “islands” will be formed on the surface of the vacated porous substrate 1; 4.
  • Merge and grow filling the formation of small "islands” The merger continues, and the larger “islands” continue to annex the smaller “islands” nearby; 5. Filling the pores to form a film: the isolated small “islands” are connected to each other as the merger progresses, and finally only some Isolated holes and channels, these holes and channels are continuously filled to form a film with continuous morphology and complete coverage.
  • the atomization core further includes a transition layer 2 formed between the heat generating layer 3 and the porous substrate 1 .
  • a transition layer 2 with a thickness of 0.1-1 ⁇ m is deposited on at least part of the atomized surface 11 of the porous substrate 1 by a thin film deposition process, and a heat generating layer 3 is formed on the side of the transition layer 2 away from the porous substrate 1 .
  • the process of forming the transition layer 2 is the same as that of the above-mentioned heat generating layer 3, so the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the heat generating layer 3 has a good continuity. It is convenient to adjust and control the thickness of the heating layer 3 . Moreover, the transition layer 2 can also prevent sodium and potassium ions from the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, thereby enhancing the stability of the resistance of the heating layer 3 .
  • the transition layer 2 can adjust the stress matching between the heating layer 3 and the surface of the porous substrate 1, enhance the adhesion between the heating layer 3 and the porous substrate 1, make the heating layer 3 firmly bonded to the porous substrate 1, and improve the heat generation.
  • the stable and reliable working performance of layer 3 prolongs the service life of the atomizing core.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.
  • the transition layer 2 is deposited and formed by the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm 2 , the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 20-100 min, and the thickness of the transition layer 2 is 0.1-1 ⁇ m.
  • the transition layer 2 When the thickness of the transition layer 2 is too thin, the transition layer 2 cannot achieve the above-mentioned effect of reducing the roughness of the porous substrate 1 surface and blocking the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field; As the thickness of the layer 2 increases, the transition layer 2 can gradually reduce the roughness of the surface of the porous substrate 1, gradually prevent the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, and gradually adjust the heating layer 3 and the surface of the porous substrate 1.
  • the stress of the transition layer 2 will increase significantly, causing the microstructure of the transition layer 2 to be destroyed during the electrification of the atomizing core, and the transition layer 2 cannot block the porous substrate
  • the sodium and potassium ions in 1 diffuse into the heating layer 3 under the action of the electric field, which affects the stability of the resistance value of the heating layer 3 .
  • the thickness of the transition layer 2 is set to 0.1-1 ⁇ m, so that the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the transition layer 2 prevents the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field,
  • the transition layer 2 adjusts the stress matching between the heating layer 3 and the surface of the porous substrate 1 .
  • the thickness of the transition layer 2 is set to 0.3-0.8 ⁇ m, which facilitates reducing the surface roughness of the porous substrate 1 and at the same time helps to block the diffusion of sodium and potassium ions in the porous substrate 1 into the heating layer 3 under the action of an electric field.
  • the stress values of the transition layer 2 and the porous substrate 1 are close to each other, so that the stresses of the transition layer 2 and the porous substrate 1 are well matched.
  • the porous substrate 1 is porous ceramics, and the transition layer 2 is at least any one of aluminum nitride layer, silicon nitride layer, chromium nitride layer, chromium carbide layer or other ceramic layers.
  • the atomizing core further includes a protective layer 4 formed on the heat generating layer 3 .
  • the protection layer 4 with a thickness of 0.5-3 ⁇ m is deposited and formed on the side of the heating layer 3 facing away from the porous substrate 1 through a thin film deposition process.
  • the protective layer 4 blocks the formation of the aerosol matrix and the outside air from entering the heating layer 3, so as to avoid oxidation or carbonization of the heating layer 3 during energization and use, enhance the oxidation resistance and carbonization resistance of the heating layer 3, and enhance the stability of the resistance of the heating layer 3 performance, improve the cycle life of the atomizing core.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.
  • the protective layer 4 is formed by depositing the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm 2 , the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 40-150 minutes.
  • the protective layer 4 cannot play the role of blocking the aerosol-forming matrix and the outside air from entering the heating layer 3; as the thickness of the protective layer 4 increases, the protective layer 4 can gradually block the aerosol-forming matrix And the outside air enters the heating layer 3; however, when the thickness of the protective layer 4 is too thick, the stress of the protective layer 4 will increase significantly, causing the microstructure of the protective layer 4 to be destroyed during the electrification of the atomizing core, and the protective layer 4 The aerosol-forming matrix and outside air cannot be blocked from entering the heating layer 3, which weakens the oxidation resistance and carbonization resistance of the heating layer 3, affects the stability of the resistance of the heating layer 3, and shortens the cycle life of the atomizing core.
  • the thickness of the protective layer 4 is set to 0.5-3 ⁇ m, so that the protective layer 4 blocks the aerosol-forming matrix and external air from entering the heating layer 3 .
  • the thickness of the protective layer 4 is set at 0.8-1.5 ⁇ m, which can well block the aerosol-forming substrate and external air from entering the heat-generating layer 3 .
  • the protective layer 4 is chemically stable and has a compact structure.
  • the protection layer 4 is at least any one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer.
  • the heating layer 3 is provided with two exposed parts 41 that are not deposited to form a protective layer 4.
  • the exposed parts 41 are used to realize the electrical connection between the power supply device and the heating layer 3. connect.
  • Embodiment 1 of the present invention also provides an atomizer, and the atomizer includes the atomizing core provided in any one of the above embodiments. Since the atomizer has all the technical features of the atomizing core provided by any of the above embodiments, it has the same technical effect as the atomizing core.
  • Embodiment 1 of the present invention also provides an aerosol generating device, which includes the atomizing core provided in any of the above embodiments or the atomizer provided in any of the above embodiments. Since the aerosol generating device has all the technical features of the atomizing core or atomizer provided by any of the above embodiments, it has the same technical effect as the atomizing core.
  • Embodiment 1 of the present invention also provides a method for preparing the above-mentioned atomizing core.
  • the method for preparing the atomizing core in Embodiment 1 of the present invention includes the following steps:
  • Step S1 depositing a transition layer: depositing a transition layer 2 on at least part of the atomized surface 11 of the porous substrate 1 through a thin film deposition process;
  • Step S2 Depositing the heat generating layer: depositing the heat generating layer 3 on the side of the transition layer 2 facing away from the porous substrate 1 through a thin film deposition process;
  • Step S3 depositing a protective layer: a protective layer 4 is deposited on the side of the heat generating layer 3 facing away from the transition layer 2 through a thin film deposition process.
  • a transition layer 2 with a thickness of 0.1-1 ⁇ m is deposited on at least part of the atomized surface 11 of the porous substrate 1 by a thin film deposition process, and the stress value of the transition layer 2 is close to that of the porous substrate 1 .
  • the transition layer 2 reduces the roughness of the surface of the porous substrate 1 , so that the heat generating layer 3 has good continuity, and it is convenient to adjust and control the thickness of the heat generating layer 3 .
  • the transition layer 2 can also prevent sodium and potassium ions from the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field, thereby enhancing the stability of the resistance of the heating layer 3 .
  • the transition layer 2 can adjust the stress matching between the heating layer 3 and the surface of the porous substrate 1, enhance the adhesion between the heating layer 3 and the porous substrate 1, make the heating layer 3 firmly bonded to the porous substrate 1, and improve the heat generation.
  • the stable and reliable working performance of layer 3 prolongs the service life of the atomizing core.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.
  • the target power density of the magnetron sputtering process is 3-12W/cm 2
  • the sputtering pressure is 0.1-0.5Pa
  • the sputtering time is 20-100min.
  • the thickness of layer 2 is 0.1-1 ⁇ m.
  • the transition layer 2 When the thickness of the transition layer 2 is too thin, the transition layer 2 cannot play the above-mentioned effect of reducing the roughness of the porous substrate 1 surface and blocking the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field; If the thickness of the layer 2 is too thick, the stress of the transition layer 2 will increase significantly, causing the microstructure of the transition layer 2 to be destroyed during the electrification and use of the atomizing core, and the transition layer 2 cannot block the sodium and potassium ions of the porous substrate 1 in the electric field. Diffusion into the heating layer 3 under action affects the stability of the resistance value of the heating layer 3 .
  • the thickness of the transition layer 2 is set to 0.1-1 ⁇ m, so that the transition layer 2 reduces the roughness of the surface of the porous substrate 1, so that the transition layer 2 prevents the sodium and potassium ions of the porous substrate 1 from diffusing into the heating layer 3 under the action of an electric field,
  • the transition layer 2 adjusts the stress matching between the heating layer 3 and the surface of the porous substrate 1 .
  • the thickness of the transition layer 2 is set to 0.3-0.8 ⁇ m, which facilitates reducing the surface roughness of the porous substrate 1 and at the same time helps to block the diffusion of sodium and potassium ions in the porous substrate 1 into the heating layer 3 under the action of an electric field.
  • the porous substrate 1 is a porous ceramic, and a transition layer 2 is deposited on at least part of the atomized surface 11 of the porous ceramic by a thin film deposition process.
  • the transition layer 2 is an aluminum nitride layer, a silicon nitride layer, a chromium nitride layer, At least any one of a chromium carbide layer or other ceramic layers.
  • the heat generating layer 3 is deposited on the side of the transition layer 2 facing away from the porous substrate 1 by a thin film deposition process.
  • the heating layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 ⁇ m.
  • the nickel-chromium alloy layer has good thermal performance, and the price of the nickel-chromium alloy layer is higher than that of precious metal layers such as gold layer, silver layer, platinum layer, palladium layer, or gold-silver alloy layer, gold-platinum alloy layer, gold-silver-platinum alloy layer, and silver-palladium alloy layer.
  • the heating layer 3 is a nickel-chromium alloy layer, and the mass ratio of Ni/(Ni+Cr) is 0.2-0.9. According to the resistance calculation formula, the thickness of the heating layer 3 determines the resistance value of the heating layer 3. The thinner the heating layer 3 is, the larger the resistance value is, and the thicker the heating layer 3 is, the smaller the resistance value is. The thickness of the heating layer 3 is adjusted and controlled to achieve the purpose of adjusting the resistance value of the heating layer 3 .
  • the inventor found that: when the thickness of the heating layer 3 is too thin, the heating layer 3 of the thin layer structure is relatively loose and the continuity is not good, which affects the stability of the resistance value of the heating layer 3 , the heat generating layer 3 is relatively easy to be oxidized or carbonized at high temperature; the thicker the heat generating layer 3 is, the continuity and compactness of the heat generating layer 3 of the thin layer structure will also increase accordingly, so that the resistance to oxidation or carbonization of the heat generating layer 3 The ability is greatly enhanced, thereby enhancing the stability of the resistance of the heating layer 3.
  • the formation time of the heat generating layer 3 is longer, thereby greatly reducing the production efficiency;
  • the microstructure is destroyed, affecting the stability of the resistance value of the heating layer 3 .
  • the resistance of the heating layer 3 is too low, there is a potential safety hazard of short circuit overload of the heating layer 3, and the resistance of the heating layer 3 is too high, there is a problem that the required heating power cannot be reached, so the common resistance of the heating layer 3 is 0.8 ⁇ 2 ⁇ .
  • the heat generation Layer 3 is a nickel-chromium alloy layer, and the thickness of the nickel-chromium alloy layer is set to 1-5 ⁇ m, so that the resistance stability of the heating layer 3 is improved, the resistance of the heating layer 3 is within the common resistance range, and the formation time of the heating layer 3 is moderate , so that the resistance stability of the atomizing core is improved, the heating power of the atomizing core is larger, the atomizing effect of the atomizing core is good, and the manufacturing cost of the atomizing core is controllable.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.
  • the heating layer 3 is deposited by magnetron sputtering process
  • the heating layer 3 is a nickel-chromium alloy layer
  • the target power density of the magnetron sputtering process is 5-15W/cm 2
  • the sputtering pressure is 0.1-0.3Pa.
  • the injection time is 30-90 minutes.
  • a nickel-chromium alloy layer with a thickness of 1-5 ⁇ m is deposited and formed on at least part of the atomized surface 11 of the porous substrate 1 through a magnetron sputtering process, and the nickel-chromium alloy layer is the heating layer 3 .
  • a chemically stable and dense protective layer 4 with a thickness of 0.5-3 ⁇ m is deposited on the side of the heating layer 3 facing away from the porous substrate 1 by a thin film deposition process.
  • the protective layer 4 blocks the formation of the aerosol matrix and the outside air from entering the heating layer 3, so as to avoid oxidation or carbonization of the heating layer 3 during energization and use, enhance the oxidation resistance and carbonization resistance of the heating layer 3, and enhance the stability of the resistance of the heating layer 3 performance, improve the cycle life of the atomizing core.
  • the thin film deposition process may be, but not limited to, a magnetron sputtering process in the thin film deposition process.
  • the protective layer 4 is formed by depositing the magnetron sputtering process, the target power density of the magnetron sputtering process is 3-12W/cm2, the sputtering pressure is 0.1-0.5Pa, and the sputtering time is 40 ⁇ 150min.
  • the protective layer 4 cannot play the role of blocking the aerosol-forming matrix and the outside air from entering the heating layer 3; as the thickness of the protective layer 4 increases, the protective layer 4 can gradually block the aerosol-forming matrix And the outside air enters the heating layer 3; however, when the thickness of the protective layer 4 is too thick, the stress of the protective layer 4 will increase significantly, causing the microstructure of the protective layer 4 to be destroyed during the electrification of the atomizing core, and the protective layer 4 The aerosol-forming matrix and outside air cannot be blocked from entering the heating layer 3, which weakens the oxidation resistance and carbonization resistance of the heating layer 3, affects the stability of the resistance of the heating layer 3, and shortens the cycle life of the atomizing core.
  • the thickness of the protective layer 4 is set to 0.5-3 ⁇ m, so that the protective layer 4 blocks the aerosol-forming matrix and external air from entering the heating layer 3 .
  • the thickness of the protective layer 4 is set at 0.8-1.5 ⁇ m, which can well block the aerosol-forming substrate and external air from entering the heat-generating layer 3 .
  • the protection layer 4 is at least any one of an aluminum oxide layer, a silicon oxide layer, an aluminum nitride layer, a silicon nitride layer, a titanium oxide layer, and a titanium nitride layer.
  • the above method for preparing the atomizing core mainly includes depositing a conductive material on at least part of the outer surface of the porous ceramic substrate by using a thin film deposition process, so as to form a heating layer on the porous ceramic substrate, and obtain a heating layer on the surface. atomizing core.
  • the transition layer 2 and/or the protective layer 4 are not included, the corresponding film layer forming steps S1 and S3 can be correspondingly omitted.
  • the atomization core preparation method of the above-mentioned atomization core also includes the following annealing and aging treatment:
  • Step S4 using the annealing and aging process to perform annealing heat treatment on the atomizing core.
  • the atomization core preparation method of the above-mentioned atomization core also includes the following electrification aging treatment step:
  • Step S5 adopting the energization aging process, supplying power to the atomizing core after the annealing heat treatment, and then heating the atomizing core after the annealing heat treatment, so as to perform aging treatment on the microstructure of the heating layer 3 .
  • the annealing heat treatment is performed on the atomization core with the heating layer 3 by adopting an annealing aging process.
  • the purpose of the annealing heat treatment is to eliminate the microscopic defects of the heat-generating layer 3, promote the grain growth in the micro-structure of the heat-generating layer 3, and make the heat-generating layer 3 more compact, thereby improving the stability of the resistance value of the atomizing core in the process of recycling, and then The heating power of the atomizing core is stable, the heating is uniform, and the atomization effect is good.
  • the heat generating layer 3 is in a relatively stable state with low free energy. To achieve a change trend towards a stable state with low free energy, it is necessary for the conductive material atoms to have a strong Diffusion ability to complete the grain boundary migration movement when the grain grows, and the high temperature annealing heat treatment makes it have this condition.
  • the annealing heat treatment of the atomizing core with the heat generating layer 3 can promote the growth of the crystal grains in the microstructure of the heat generating layer 3, making the heat generating layer 3 more dense, and improving the resistance of the heat generating layer 3 during energization and use. Stability, so as to improve the stability of the resistance of the atomizing core during energization and use.
  • the annealing heat treatment temperature of the heat generating layer 3 of the atomizing core is 500-800° C., and the annealing heat treatment time is 5-60 minutes.
  • the annealing heat treatment process of the atomizing core is carried out in a protective gas atmosphere.
  • the atomizing core is placed in a tube furnace for annealing heat treatment.
  • the tube furnace is continuously filled with protective gas to prevent the heat generation layer 3 from forming during the annealing heat treatment process of the atomizing core. oxidation.
  • the shielding gas can be, but is not limited to, nitrogen.
  • transition layer 2 and protective layer 4 have the same change trend as that of the heat generating layer 3 during the annealing heat treatment.
  • the coarser the grains in the transition layer 2 or protective layer 4 the smaller the total grain boundary surface area and the lower the total surface energy . Since grain coarsening can reduce the surface energy, the transition layer 2 or protective layer 4 is in a relatively stable state with low free energy.
  • conductive material atoms are required It has a strong diffusion ability to complete the migration movement of the grain boundary when the grain grows, and the high temperature annealing heat treatment makes it have this condition.
  • annealing the transition layer 2 or protective layer 4 of the atomization core can promote the grain growth in the microstructure of the transition layer 2 or protective layer 4, making the transition layer 2 or protective layer 4 denser, thereby improving The stability of the resistance value of the atomizing core during the cycle use.
  • the atomization core after the annealing heat treatment is subjected to energization and aging treatment: the atomization core after the annealing heat treatment is powered, the atomization core after the annealing heat treatment is energized and then generates heat, and the microstructure of the heating layer 3 is subjected to aging treatment.
  • aging treatment to enhance the electrical stability of the heat generating layer 3 .
  • the heating layer 3 of the atomizing core is powered by a DC stabilized power supply, the power is 6-8W, and the power-on time is 1-20min.
  • the purpose of carrying out the electrification aging treatment on the atomizing core is to improve the resistance stability of the atomizing core during electrification and use.
  • the preparation method of the atomizing core in the first embodiment of the present invention adopts the annealing and aging process to perform annealing heat treatment on the heating layer 3 of the atomizing core, so that the crystal grains in the microstructure of the heating layer 3 grow, Make the heating layer 3 denser and reduce the microscopic defects of the heating layer 3 ; then, conduct energization and heating treatment on the atomizing core after the annealing heat treatment, so as to perform further aging treatment on the microstructure of the heating layer 3 .
  • the atomizing core can improve and increase the resistance stability of the heating layer 3, enhance the electrical stability of the heating layer 3, and then make the heating layer 3 generate more uniform heat, preventing the atomizing core from The phenomenon that the local temperature is too high can have a good atomization effect on the aerosol-forming substrate.
  • the annealing heat treatment is first performed on the atomizing core with the heat generating layer 3 , and then the energized aging treatment is performed on the annealing heat-treated atomizing core.
  • the order of the above-mentioned processing cannot be changed. This is to simulate the real use atmosphere of the atomizing core. Because the electrification aging treatment is generally carried out in the atmosphere, and the annealing heat treatment is usually carried out in the protective gas atmosphere.
  • annealing heat treatment is first performed on the atomizing core with the heating layer 3 under the protective gas atmosphere, so that the grains of the internal structure of the heating layer 3 are coarsened to reduce the surface energy, so that the transition layer 2 and the heating layer on the atomizing core
  • the layer 3 and the protective layer 4 are in a relatively stable state with low free energy, thereby making the transition layer 2, the heating layer 3 and the protective layer 4 denser, reducing the microscopic defects of the transition layer 2, the heating layer 3 and the protective layer 4, Improve the stability of transition layer 2, heat generating layer 3 and protective layer 4.
  • the stable and dense transition layer 2 can prevent the sodium and potassium ions of the porous ceramic substrate 1 from diffusing into the heating layer 3 under the action of an electric field, further improving the resistance stability of the heating layer 3;
  • the stable and dense heating layer 3 can enhance the resistance stability of the heating layer 3;
  • the stable and dense protective layer 4 can make the heating layer 3 and the aerosol form a matrix and air Oxygen isolation in the heat-generating layer 3 improves the anti-oxidation performance and anti-carbonization performance of the heat-generating layer 3, thereby improving the resistance stability of the heat-generating layer 3.
  • the atomizing core also includes two electrodes 5 for electrically connecting the heating layer 3 with the power supply device. Please refer to FIG. 4 and FIG. 5 together.
  • the electrode 5 is formed on the atomizing surface 11 of the porous substrate 1 through a thick film deposition process, and the thickness of the electrode 5 is 20-60 ⁇ m.
  • the electrode 5 is firmly combined on the porous substrate 1 to prevent the electrode 5 from falling off under the impact of the high-temperature and high-speed aerosol-forming matrix fluid; It bears the pressing force from the metal spring pins.
  • the electrode 5 has enough contact area to be electrically connected with the metal spring pins, so that the electrical connection can be easily realized with the power supply device through the metal spring pins, thereby facilitating the heating of the heating layer. 3 and achieve electrical connection with the power supply device through the electrode 5.
  • the electrode 5 is at least any one of a gold layer, a silver layer, a platinum layer, a palladium layer, an aluminum layer, a copper layer, a gold-silver alloy layer, a silver-platinum alloy layer, and a silver-palladium alloy layer.
  • the metal paste is screen-printed on the porous substrate 1 by a screen-printing process, and the electrodes 5 are formed after drying and sintering.
  • the metal paste is at least any one of gold, silver, platinum, palladium, aluminum, copper, gold-silver alloy, silver-platinum alloy, and silver-palladium alloy to form the electrode 5 on the porous substrate 1 .
  • the electrodes 5 are arranged in pairs and spaced apart on the first region 11a on the atomizing surface 11, and the heat generating layer 3 is at least covered on the second region 11a on the atomizing surface 11.
  • the second area 11b is the area outside the first area 11a on the atomizing surface 11, so that the first area 11a and the second area 11b are continuous areas on the atomizing surface 11, and the heat generating layer 3 includes The heating part 31 of the second region 11b on the atomizing surface 11 of the porous substrate 1, the first connecting part 32 formed on at least part of the surface of one of the electrodes 5, and the second connecting part 33 formed on at least part of the surface of the other electrode 5 , the first connecting portion 32 and the second connecting portion 33 are respectively connected to the heat generating portion 31 .
  • the heating layer 3 is electrically connected to the corresponding electrode 5 through surface-to-surface contact to avoid poor contact between the electrode 5 and the heating layer 3 , thereby improving the stability and reliability of power supply to the heating layer 3 .
  • the electrodes 5 are arranged in pairs and spaced apart on the first region 11a on the atomizing surface 11, and the transition layer 2 is formed on the second region 11b on the atomizing surface 11. , the heat generating layer 3 is covered on the side of the transition layer 2 facing away from the porous substrate 1 .
  • the second area 11b is also an area on the atomizing surface 11 outside the first area 11a, so that the first area 11a and the second area 11b are continuous areas on the atomizing surface 11 .
  • the heat generation layer 3 includes a heat generation portion 31 formed on the side of the transition layer 2 away from the porous substrate 1, a first connection portion 32 formed on at least part of the surface of one of the electrodes 5, and a second connection portion 32 formed on at least part of the surface of the other electrode 5.
  • the part 33, the first connecting part 32, and the second connecting part 33 are respectively connected to the heating part 31.
  • the heating layer 3 is electrically connected to the corresponding electrode 5 through surface-to-surface contact to avoid poor contact between the electrode 5 and the heating layer 3 , thereby improving the stability and reliability of power supply to the heating layer 3 .
  • the thickness of the electrode 5 is greater than the sum of the thicknesses of the transition layer 2, the heat generating part 31 and the protective layer 4, and a groove 6 can be formed between the two electrodes 5.
  • the transition layer 2, the heating part 31 and the protective layer 4 are sequentially stacked from bottom to top from the inner bottom surface of the groove 6, and the transition layer 2, the heating part 31 and the protective layer 4 are accommodated and positioned on the two electrodes.
  • the groove 6 between 5 it is beneficial to enhance the stability of the transition layer 2, the heating part 31 and the protective layer 4 on the porous substrate 1.
  • the heat generating layer 3 is at least partially formed on the electrode 5 .
  • the first connecting portion 32 includes a first side portion 321 extending from the side of the heating portion 31 close to one of the electrodes 5 and bent along the thickness direction of the electrode 5
  • the second connecting portion 33 includes a second side portion 331 extending from the side of the heating portion 31 close to the other electrode 5 and extending along the thickness direction of the electrode 5 .
  • the first side portion 321 and the second side portion 331 are respectively combined with on the corresponding side of the corresponding electrode 5 .
  • the first side part 321 and the second side part 331 can be respectively combined with the corresponding side of the corresponding electrode 5, and the heating layer 3 can be electrically connected with the corresponding electrode 5 through the surface-to-surface contact form, so as to avoid the occurrence of the electrode 5 and the heating layer 3. Poor contact, thereby improving the stability and reliability of power supply to the heating layer 3 .
  • the first connection part 32 also includes a first connection part 322 formed on the side of one of the electrodes 5 away from the porous substrate 1
  • the second connection part 33 also includes a In the second bonding portion 332 on the side of the other electrode 5 away from the porous substrate 1, the corresponding side of the first bonding portion 322 is connected to the corresponding side of the first side portion 321, and the corresponding side of the second bonding portion 332 is connected to the corresponding side of the second bonding portion 332. Corresponding sides of the second side portion 331 are connected.
  • the contact area between the electrode 5 and the heating layer 3 is increased, which is conducive to improving the stability of the power supply from the electrode 5 to the heating layer 3; on the other hand, the contact area between the electrode 5 and the heating layer 3 is increased, thereby reducing heat generation.
  • the contact resistance between the layer 3 and the electrode 5 is beneficial to concentrate the heating area on the heating part 31; on the other hand, it can enhance the adhesion of the heating layer 3, so that the heating layer 3 is more firmly combined with the porous substrate 1 and the electrode 5.
  • the atomizing surface 11 in the above embodiment is a plane.
  • the heat generation part 31, the first connection part 32 and the second connection part 33 are formed at one time when the heat generation layer 3 is formed, and the first connection part 32 does not include the first joint part 322, and the second connection part 33 does not include In the case of the second joint portion 332, it is only necessary to perform masking treatment on the side of the electrode 5 away from the porous substrate 1 when the heat generating layer 3 is formed by a thin film deposition process, so that the heat generating layer 3 cannot be deposited and formed on the electrode 5 away from the porous substrate 1. side.
  • Embodiment 2 of the present invention also provides an atomizer, and the atomizer includes the atomizing core provided in any one of the above embodiments. Since the atomizer has all the technical features of the atomizing core provided by any of the above embodiments, it has the same technical effect as the atomizing core.
  • Embodiment 2 of the present invention also provides an aerosol generating device.
  • the aerosol generating device includes the atomizing core provided in any of the above embodiments or the atomizer provided in any of the above embodiments. Since the aerosol generating device has all the technical features of the atomizing core or atomizer provided by any of the above embodiments, it has the same technical effect as the atomizing core.
  • Embodiment 2 of the present invention also provides a method for preparing the above-mentioned atomizing core.
  • the difference between the method for preparing the atomizing core in Embodiment 2 of the present invention and the method for preparing the atomizing core in Embodiment 1 is that:
  • the atomization core preparation method of the above atomization core also includes:
  • Step S0 Electrode fabrication: screen printing metal paste on the porous substrate 1 by screen printing, drying and sintering to form the electrode 5 . It can be understood that in other implementation manners, the electrode 5 can also be formed in other ways.
  • the porous substrate 1 screen-printed with the electrode 5 is placed in a vacuum chamber, and the vacuum is evacuated to 0.003Pa, and the porous substrate 1 is subjected to a Kaufmann-type ion source pair. Ion cleaning 2 ⁇ 10min.
  • the difference between the atomizing core in the third embodiment and the atomizing core in the second embodiment is that the atomizing surface 11 is not a plane.
  • a first concave portion 13 and a second concave portion 14 are respectively concavely formed on one surface of the porous matrix 1, and the first concave portion 13 and the second concave portion 14 are arranged at intervals to The part between the first depression 13 and the second depression 14 forms a raised portion 12, the atomizing surface 11 includes a first surface 11c where the raised portion 12 is away from the porous matrix 1, and the first depression 13 is away from the porous base 1
  • the second surface 11d of the second concave portion 14 is away from the third surface 11e of the porous matrix 1, the first transition surface 11f connecting the first surface 11c and the second surface 11d, and the first transition surface 11f connecting the first surface 11c and the third surface 11e
  • the second transition surface 11g is provided.
  • One of the electrodes 5 is deposited and formed in the first recessed portion 13, the other electrode 5 is deposited and formed in the second recessed portion 14, the heating portion 31 is deposited and formed on the first surface 11c of the raised portion 12, and the two electrodes 5
  • the upper end surface is higher than the upper end surface of the heat generating part 31 .
  • the heating layer 3 includes a heating portion 31 formed in the second region 11 b on the atomizing surface 11 of the porous substrate 1 , and a first connecting portion 32 formed on at least part of the surface of one of the electrodes 5 , The second connecting portion 33 formed on at least part of the surface of the other electrode 5 , the first connecting portion 32 and the second connecting portion 33 are respectively connected to the heating portion 31 .
  • the first connection part 32 includes a first joint part 322 formed on the side of one electrode 5 away from the porous substrate 1, and the second connection part 33 includes a second joint part formed on the side of the other electrode 5 away from the porous substrate 1 332.
  • Corresponding sides of the first combining portion 322 are connected to corresponding sides of the heating portion 31
  • corresponding sides of the second combining portion 332 are connected to corresponding sides of the heating portion 31 .
  • the first connecting portion 32 may not include the first side portion 321, the second connecting portion 33 may not include the second side portion 331, and the first connecting portion 322 of the first connecting portion 32 is respectively connected to one of the electrodes 5 and The heating part 31 and the second connecting part 332 of the second connection part 33 are respectively connected to the other electrode 5 and the heating part 31 .
  • the contact area between the electrode 5 and the heating layer 3 is increased, which is conducive to improving the stability of the power supply from the electrode 5 to the heating layer 3; on the other hand, the contact area between the electrode 5 and the heating layer 3 is increased, thereby reducing heat generation.
  • the contact resistance between the layer 3 and the electrode 5 is conducive to concentrating the heating area on the heating part 31; on the other hand, it can enhance the adhesion of the heating layer 3, so that the heating layer 3 is more firmly combined with the porous substrate 1 and the electrode 5.
  • the atomizing surface 11 in the above embodiment is a plane.
  • the silver-palladium metal paste is screen-printed on the porous substrate 1 by a screen-printing process, and the electrode 5 is formed after drying and sintering.
  • the drying temperature of the electrode 5 is 80°C
  • the drying time of the electrode 5 is 20 minutes
  • the sintering condition is to keep the temperature environment at 910°C for 20 minutes;
  • porous substrate 1 screen-printed with silver-palladium metal electrodes 5 into a magnetron sputtering vacuum chamber, evacuate to 0.003Pa, and use a Kaufmann-type ion source to perform ion cleaning on the substrate for 5 minutes.
  • the power of the ion source is 200W;
  • a magnetron sputtering process is used to directly deposit the heating layer 3 on the outer surface of the ion-cleaned porous substrate 1 .
  • the mass ratio of Ni/(Ni+Cr) in the nickel-chromium alloy target used is 80%
  • the sputtering power density of the nickel-chromium alloy target is 10W/cm 2
  • the sputtering pressure is 0.3Pa
  • the thickness of the heat-generating layer 3 deposited on the porous substrate 1 in Experimental Example 1 was tested by using a procedural instrument, and the thickness of the heat-generating layer 3 was measured to be 1 ⁇ m.
  • the atomizing core prepared in Experimental Example 1 is marked as S-1, and the atomizing core S-1 is assembled with a battery and a pod to form an electronic cigarette, and a simulated smoking test is performed on an electronic cigarette smoking machine. After the test, the atomizing core S-1 was taken out to measure the change of its resistance value. It can be clearly seen from Figure 9 that in the first 3000 cycles, the resistance value of the atomizing core S-1 changed significantly at the beginning of the test, and the range of subsequent resistance value changes decreased significantly.
  • the difference between Experimental Example 2 and Experimental Example 1 is that the time for magnetron sputtering of the heating layer 3 is different.
  • the sputtering time in Experimental Example 2 is 60 minutes to increase the thickness of the heating layer 3 deposited on the porous substrate 1 .
  • the thickness of the heating layer 3 in Experimental Example 2 was measured to be 3 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 2 was marked as S-2.
  • the electronic cigarette was assembled into a simulated smoking test on the electronic cigarette smoking machine, and the resistance value change of the atomizing core was measured after the test.
  • the difference between Experimental Example 3 and Experimental Example 1 is: the time of magnetron sputtering heating layer 3 is different, and the sputtering time in Experimental Example 3 is 90min, to increase the thickness of deposition heating layer 3 on porous substrate 1.
  • the thickness of the heat generating layer 3 in Experimental Example 3 was measured to be 5 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 3 was marked as S-3.
  • the electronic cigarette was assembled into a simulated smoking test on the electronic cigarette smoking machine, and the resistance value change of the atomizing core was measured after the test.
  • the difference between this experimental example and experimental example 2 is: before depositing the heating layer 3, the silver-palladium metal electrode 5 screen-printed on the porous substrate 1 is covered by a mask, and then at least part of the outer surface of the porous substrate 1 An aluminum nitride transition layer 2 is deposited to prevent aluminum nitride from being deposited on the silver-palladium metal electrode 5 . Specifically, aluminum nitride is deposited on the porous substrate 1 using a magnetron sputtering process.
  • the reaction gas is nitrogen
  • argon is the working gas
  • the nitrogen/argon gas flow ratio is 1.2
  • the sputtering pressure is 0.35Pa
  • the metal aluminum target sputtering power density is 8W/cm 2
  • the sputtering time is 20min.
  • the thickness of the aluminum nitride transition layer 2 in Experimental Example 4 was measured to be 0.1 ⁇ m by using a step meter. After the aluminum nitride transition layer 2 is deposited, the heat generating layer 3 is continuously deposited on the side of the aluminum nitride transition layer 2 facing away from the porous substrate 1 using the same process steps as in Experimental Example 1.
  • the thickness of the heating layer 3 in Experimental Example 4 was measured to be 3 ⁇ m by using the same instrument and testing method as in Experimental Example 1.
  • the atomizing core prepared in Experimental Example 4 is marked as S-4, and the cycle reliability test of the atomizing core S-4 is carried out by the same method as in Experimental Example 1, and its resistance value is measured.
  • the difference between Experimental Example 5 and Experimental Example 4 lies in that the time for magnetron sputtering the transition layer of aluminum nitride 2 is different, and the sputtering time is 50 minutes.
  • the thickness of the aluminum nitride transition layer 2 in Experimental Example 5 was measured to be 0.5 ⁇ m by using a step meter, and the atomization core prepared in Experimental Example 5 was marked as S-5.
  • the cycle reliability test was carried out on the atomizing core S-5, and its resistance value was measured.
  • the difference between Experimental Example 6 and Experimental Example 4 lies in that the time for magnetron sputtering the aluminum nitride transition layer 2 is different, and the sputtering time is 100 min.
  • the thickness of the aluminum nitride transition layer 2 in Experimental Example 6 was measured to be 1 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 6 was marked as S-6.
  • the cycle reliability test was carried out on the atomizing core S-6, and its resistance value was measured.
  • Experimental Example 7 The difference between Experimental Example 7 and Experimental Example 5 is that an aluminum oxide protective layer is deposited on the heating layer 3, that is, after the heating layer 3 is deposited in Experimental Example 5, the magnetron sputtering process is used to continue to place the heating layer 3 away from the porous substrate 1 A protective layer of aluminum oxide is deposited on one side. Before magnetron sputtering the aluminum oxide protective layer, a mask is used to shield the silver-palladium metal electrode 5 screen-printed on the porous substrate 1 to prevent aluminum oxide from being deposited on the silver-palladium metal electrode 5 . Specifically, a magnetron sputtering process is used to deposit the aluminum oxide protective layer.
  • the reactive gas of magnetron sputtering is oxygen, argon is the working gas, the gas flow ratio of oxygen/argon is 1.5, the sputtering pressure is 0.4Pa, and the metal aluminum
  • the sputtering power density of the target is 9W/cm 2 , and the sputtering time is 40min.
  • the thickness of the aluminum oxide protective layer in Experimental Example 7 was measured to be 0.5 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 7 was marked as S-7. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-7, and its resistance value was measured.
  • Experimental Example 8 The difference between Experimental Example 8 and Experimental Example 7 is that the time for magnetron sputtering the aluminum oxide protective layer is different, and the sputtering time is 90 minutes.
  • the thickness of the aluminum oxide protective layer in Experimental Example 8 was measured to be 1.5 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 8 was marked as S-8. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-8, and its resistance value was measured.
  • Experimental Example 9 The difference between Experimental Example 9 and Experimental Example 7 is that the time for magnetron sputtering of the aluminum oxide protective layer is different, and the sputtering time is 150 minutes.
  • the thickness of the aluminum oxide protective layer in Experimental Example 9 was measured to be 3 ⁇ m by using a step meter, and the atomizing core prepared in Experimental Example 9 was marked as S-9. Using the same method as in Experimental Example 1, the cycle reliability test was carried out on the atomizing core S-9, and its resistance value was measured.
  • Experimental Example 10 The difference between Experimental Example 10 and Experimental Example 8 is that: the atomizing core prepared in Experimental Example 8 was placed in a tube furnace for annealing heat treatment.
  • the protective gas in the tube furnace is nitrogen
  • the annealing temperature is 500° C.
  • the annealing time is 10 min.
  • the annealed atomizing core in Experimental Example 10 is marked as S-10, and the cycle reliability test of atomizing core S-10 is carried out by the same method as Experimental Example 1, and its resistance value is measured.
  • Experimental Example 11 The difference between Experimental Example 11 and Experimental Example 10 is that the annealing temperature is different, and the annealing temperature is 700°C.
  • the annealed atomizing core in Experimental Example 11 is marked as S-11, and the cycle reliability test of atomizing core S-11 is carried out by the same method as Experimental Example 1, and its resistance value is measured.
  • Experimental Example 12 The difference between Experimental Example 12 and Experimental Example 10 is that the annealing temperature is different, and the annealing temperature is 800°C.
  • the annealed atomizing core in Experimental Example 12 is marked as S-12, and the cycle reliability test of atomizing core S-12 is carried out by the same method as Experimental Example 1, and its resistance value is measured.
  • Experimental Example 13 The difference between Experimental Example 13 and Experimental Example 11 is that: the atomizing core prepared in Experimental Example 11 is subjected to energization, heating and aging treatment.
  • the power supply used in the energization and heating aging treatment is a DC stabilized power supply with a power of 5W. After energizing for 2s, stop for 5s, then continue to energize for 2s and stop for 5s, a total of 100 cycles are performed.
  • the atomizing core after energizing, heating and aging treatment in Experimental Example 13 is marked as S-13, and the cycle reliability test of atomizing core S-13 is carried out by the same method as Experimental Example 1, and its resistance value is measured.
  • Experimental Example 14 The difference between Experimental Example 14 and Experimental Example 13 is that the energized power is 7W.
  • the atomizing core after energized heating and aging treatment in Experimental Example 14 is marked as S-14, and the cycle reliability test of atomizing core S-14 is carried out by the same method as in Experimental Example 1, and its resistance value is measured.
  • Experimental Example 15 The difference between Experimental Example 15 and Experimental Example 13 is that the energized power is 9W.
  • the atomizing core after electrification heating aging treatment in Experimental Example 15 is marked as S-15, and the cycle reliability test of atomizing core S-15 is carried out by the same method as Experimental Example 1, and its resistance value is measured.
  • Table 1 The data table of the resistance value of the atomizing core cycle test in Experimental Example 1 to Experimental Example 15
  • the change resistance value of the total cycle in Table 1 refers to the difference between the resistance value of the test sample after the 3000th cycle test and the initial resistance value of the test sample
  • the change resistance value of the total cycle in Table 1 refers to The ratio of the above-mentioned change resistance value of the test sample to the initial resistance value of the test sample. It can be understood that the smaller the change resistance value of the total cycle and/or the smaller the change resistivity of the total cycle, it can be judged that the change of the resistance value after the cycle test is reduced, and the resistance stability of the test sample in the cycle test is higher.
  • the cycle test data of atomizing core S-1 to atomizing core S-15 in Table 1 are the data obtained through the test of one test sample. Except atomizing core S-1 to atomizing core S-3, the initial resistance values are different because they have heat-generating layers 3 with different thicknesses.
  • the comparative example of controlling a single variation will select test samples with similar initial resistance values from multiple test samples in the same batch, for example: atomizing core S-4 to atomizing core S-6 is controlled as a single change in the thickness of the transition layer 2, and the test samples with relatively similar initial resistance values are selected from the multiple test samples of the atomizing core S-2 with the heating layer 3 thickness of 3 ⁇ m in the same batch.
  • the atomizing core S-1 in Experimental Example 1 has a thickness of heating layer 3 of 1 ⁇ m, and its initial resistance value is 1.56 ⁇
  • the atomizing core in Experimental Example 2 S-2 the thickness of the heating layer 3 is 3 ⁇ m, and its initial resistance value is 1.25 ⁇
  • the atomizing core S-3 in Experimental Example 3 the thickness of the heating layer 3 is 5 ⁇ m, and its initial resistance value is 1.07 ⁇
  • the corresponding initial resistance value will also be different accordingly: the thicker the heating layer 3 is, the lower the initial resistance value is. In this way, the initial resistance value of the atomizing core can be adjusted by changing the thickness of the heating layer 3 .
  • the atomizing core S-1 in Experimental Example 1 has a heat generating layer 3 with a thickness of 1 ⁇ m, a changing resistance value of 1.21 ⁇ in a cycle test, and a changing resistivity of 77.6%.
  • the thickness of the heat-generating layer 3 is 3 ⁇ m
  • the changing resistance value of the cycle test is 0.67 ⁇
  • the changing resistivity is 53.6%
  • the atomizing core S-2 in Experimental Example 3 is 3.
  • the thickness of the heating layer 3 is 5 ⁇ m
  • the change resistance value of the cycle test is 0.54 ⁇
  • the change resistance rate is 50.5%.
  • the thicker the heat generation layer 3 is, the greater the thickness of the heat generation layer 3 is, the greater the thickness of the heat generation layer 3 after the cycle test.
  • the resistance change is reduced. This is because the heating layer 3 is formed on the porous substrate 1 by thin film deposition. If the surface roughness of the porous substrate 1 is relatively large and the heating layer 3 is relatively thin, the heating layer 3 is discontinuous and loosely distributed.
  • the heat generating layer 3 is easily oxidized or carbonized, which affects the stability of its resistance value.
  • the thicker the heating layer 3 is, the distribution of the heating layer 3 is continuous and dense, which improves the oxidation resistance or carbonization resistance, so that the resistance value is more stable.
  • the aluminum nitride transition layer 2 of the atomizing core S-6 in Experimental Example 6 has a thickness of 1 ⁇ m, and the change resistance value of the cycle test is 0.47 ⁇ , and the change resistivity is 37.9%, and the stability of the resistance value decreases instead. This is because the aluminum nitride transition layer 2 can block sodium and potassium ions in the porous substrate 1 from penetrating into the heating layer 3 under an electric field.
  • the aluminum nitride transition layer 2 is within a certain thickness range, and the thicker the thickness, the better the barrier effect.
  • the stress of the aluminum nitride transition layer will increase significantly, causing the microstructure of the heating layer 3 to be destroyed during the cycle test, resulting in the resistance value of the atomizing core cycle test Stability decreased instead.
  • the resistance value change of atomizing core S-7, atomizing core S-8 and atomizing core S-9 in Experimental Example 7 to Experimental Example 9 is obviously smaller than that of Experimental Example 5
  • the atomizing core S-5 in the middle is due to the setting of the aluminum oxide protective layer, which isolates the heating layer 3 from the aerosol forming matrix and the oxygen in the air, so as to avoid the influence of the heating layer 3 being carbonized and oxidized by high temperature during long-term use.
  • the stability of the resistance value improves the resistance stability of the heating layer 3 of the atomizing core, and increases the cycle life of the atomizing core.
  • the aluminum oxide protective layer of atomizing core S-9 in Experimental Example 9 has a thickness of 3 ⁇ m, and its resistance value in the cycle test is 0.29 ⁇ , and the change resistivity is 22.7%.
  • the stability of the resistance value in the cycle test decreases instead. This is because the aluminum oxide protective layer is within a certain thickness range, and the thicker the aluminum oxide protective layer is, the higher the density is, which can better isolate the heating layer 3 from the aerosol-forming matrix and oxygen in the air.
  • the stress of the alumina protective layer will increase significantly, resulting in the destruction of the microstructure of the alumina protective layer during the cycle test, resulting in the stability of the resistance value of the atomizing core cycle test Instead, it declined.
  • the change of the resistance value of atomizing core S-10, atomizing core S-11 and atomizing core S-12 in Experimental Example 10 to Experimental Example 12 is obviously smaller than that of Experimental Example 8 In the atomizing core S-8, this is because the annealing heat treatment can reduce the microscopic defects of the transition layer 2, the heating layer 3 and the protective layer 4, so that the crystal grains in the microstructure of the heating layer 3 grow up, and the heating layer 3 is made more Dense, so as to improve the stability of the heating layer 3 cycle test resistance of the atomizing core.
  • the annealing temperature was increased to 700°C.
  • the changing resistance value of the cycle test was 0.13 ⁇ , and the changing resistivity was 9.7%.
  • the atomizing core in Experimental Example 11 The resistance stability of the S-11 cycle test is significantly improved.
  • the annealing temperature was further increased to 800°C in Experimental Example 12
  • the changing resistance value of the atomizing core S-12 in Experimental Example 12 was 0.21 ⁇ , and the changing resistivity was 15.4%.
  • the resistance stability of the atomizing core S-12 cycle test decreases instead, because too high temperature will destroy the microstructure of the transition layer 2, heating layer 3 or protective layer 4, and affect the stability of the resistance of the heating layer 3 cycle test.
  • the power of the energization heating aging treatment is too low, the heating value of the heating layer 3 is small, the microstructure of the heating layer 3 is improved slightly, and thus the stability of the resistance of the heating layer 3 is improved slightly.
  • the power of the energized heating aging treatment is 7W
  • the change resistance value of the cycle test is 0.07 ⁇
  • the change resistivity is 4.8%, which can significantly improve the heating layer of the atomizing core. 3 Stability of cycle resistance.
  • the power of the heating and aging treatment was increased to 9W, and the changing resistance value of the cycle test was 0.41 ⁇ , and the changing resistivity was 27.7%.
  • the heating layer of the atomizing core was 3 On the contrary, the stability of the cycle resistance decreased. This is because the power of the energization heating aging treatment is too high, the greater the heating value of the heating layer 3, the excessive heating value will destroy the microstructure of the heating layer 3, thereby reducing the stability of the heating layer 3 resistance.

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Abstract

一种雾化芯制备方法，首先通过薄膜沉积工艺将导电材料形成于多孔陶瓷基底的外表面上，以形成表面具有发热层的雾化芯；其次，采用退火老化工艺，对雾化芯的发热层进行退火热处理，使发热层微观结构中的晶粒长大，促使发热层更加致密，减少发热层的微观缺陷；然后，对退火热处理后的雾化芯进行通电发热处理，以对发热层的微观结构进行进一步的老化处理。这样，雾化芯在经过退火热处理及通电老化处理后，能够改善并提高发热层电阻的稳定性，增强了发热层的电学稳定性，进而使得发热层发热更均匀，防止雾化芯出现局部温度过高的现象，可对气溶胶形成基质具有良好的雾化效果。

Description

雾化芯制备方法 技术领域
本发明属于雾化技术领域，特别地，涉及一种雾化芯制备方法。
背景技术
气溶胶发生装置使用的薄膜发热式雾化芯，通常是将发热薄膜附着在多孔陶瓷的雾化面上，通过发热薄膜对雾化面上的气溶胶形成基质进行加热，使气溶胶形成基质雾化形成烟雾。当前的薄膜发热式雾化芯存在连续性差、厚度难以调节控制的问题，容易导致薄膜式发热层电阻阻值稳定性差，进而造成薄膜发热式雾化芯发热均匀性差。
发明内容
基于现有技术中存在的上述问题，本发明实施例的目的在于提供一种改善和提高发热层电阻阻值稳定性的雾化芯制备方法。
为实现上述目的，本发明采用的技术方案是：提供一种雾化芯制备方法，包括如下步骤：
采用薄膜沉积工艺将导电材料沉积在多孔陶瓷基底的至少部分外表面上，以在所述多孔陶瓷基底上形成发热层，获得表面具有发热层的雾化芯；
采用退火老化工艺，对所述雾化芯进行退火热处理。
可选的，所述退火热处理步骤中，所述退火热处理的温度为500～800℃，所述退火热处理的时间为5～60分钟。
可选的，所述退火热处理步骤中，所述雾化芯退火热处理过程，在保护气体氛围中进行。
所述雾化芯制备方法还包括通电老化处理步骤，所述通电老化处理步骤包 括：采用通电老化工艺，对退火热处理后的所述雾化芯进行供电，退火热处理后的所述雾化芯通电后发热，以对所述发热层的微观结构进行老化处理。
可选的，所述通电老化处理步骤中，通电功率为6～8W，通电时间为1～20分钟。
可选的，所述通电老化处理步骤中，所述雾化芯的通电老化处理过程，在大气氛围下进行。
可选的，所述通电老化处理步骤中，采用直流稳压电源对所述雾化芯进行供电。
可选的，所述导电材料为镍铬合金材料，所述镍铬合金材料通过所述薄膜沉积工艺沉积形成镍铬合金发热层，所述镍铬合金发热层的沉积厚度为1～5μm。
可选的，所述镍铬合金材料中Ni/(Ni+Cr)的质量比为0.2～0.9。
可选的，所述多孔陶瓷基底的孔隙率为30％～80％，所述多孔陶瓷基底的孔径为10～30μm。
本发明实施例中的上述一个或多个技术方案，与现有技术相比，至少具有如下有益效果之一：
本发明实施例中的雾化芯制备方法，首先通过薄膜沉积工艺将导电材料形成于多孔陶瓷基底的外表面上，以形成表面具有发热层的雾化芯；其次，采用退火老化工艺，对雾化芯的发热层进行退火热处理，使发热层微观结构中的晶粒长大，促使发热层更加致密，减少发热层的微观缺陷。这样，雾化芯在经过退火热处理后，能够改善并提高发热层电阻的稳定性，增强了发热层的电学稳定性，进而使得发热层发热更均匀，防止雾化芯出现局部温度过高的现象，可对气溶胶形成基质具有良好的雾化效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例一提供的雾化芯的剖视结构示意图；
图2为本发明实施例一提供的雾化芯的另一剖视结构示意图；
图3为本发明实施例二提供的雾化芯的俯视结构示意图；
图4为本发明实施例二提供的雾化芯的剖视结构示意图；
图5为本发明实施例二提供的多孔基底的剖视结构示意图；
图6为本发明实施例三提供的雾化芯的剖视结构示意图；
图7为本发明实施例三提供的多孔基底的剖视结构示意图；
图8为本发明实施例四提供的雾化芯的剖视结构示意图；
图9为本发明实施例1至实施例15中制备的雾化芯循环测试电阻值对比图；
图10为本发明实施例2、实施例5、实施例8、实施例11及实施例14中制备的雾化芯循环测试电阻值对比图；
图11为本发明实施例1至实施例3中制备的雾化芯循环测试电阻值对比图；
图12为本发明实施例2及实施例4至实施例6中制备的雾化芯循环测试电阻值对比图；
图13为本发明实施例5及实施例7至实施例9中制备的雾化芯循环测试电阻值对比图；
图14为本发明实施例8及实施例10至实施例12中制备的雾化芯循环测试电阻值对比图；
图15为本发明实施例11及实施例13至实施例15中制备的雾化芯循环测 试电阻值对比图。
其中，图中各附图标记：
多孔陶瓷基底；11-雾化面；11a-第一区域；11b-第二区域；11c-第一表面；11d-第二表面；11e-第三表面；11f-第一过渡面；11g-第二过渡面；12-凸起部；13-第一凹陷部；14-第二凹陷部；2-过渡层；
3-发热层；31-发热部；32-第一连接部；321-第一侧部；322-第一结合部；33-第二连接部；331-第二侧部；332-第二结合部；
4-保护层；41-裸露部；5-电极；6-凹槽。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
实施例一
请一并参阅图1至2，现对本发明实施例一提供的雾化芯进行说明。本发明实施例一提供的雾化芯用于雾化器，其可在气溶胶发生装置的电源装置的电驱动下发热，将雾化器的储液腔中的气溶胶形成基质加热雾化形成烟雾，以供用户吸食而达到模拟吸烟的效果。
请结合参阅图2，本发明实施例一提供的雾化芯包括多孔基底1和发热层3。多孔基底1的至少部分外表面形成有雾化面11。多孔基底1内部具有毛细吸附作用的微孔结构，多孔基底1可通过微孔结构吸附、存储气溶胶形成基质，且吸附、存储的气溶胶形成基质可经由微孔结构持续传输至雾化面11。至少部分雾化面11上形成有发热层3。则雾化芯在使用时，通过气溶胶发生装置的电源装置向雾化芯供电，发热层3在通电后产生热量，加热传输至雾化面11上气溶胶形成基质，以使气溶胶形成基质雾化形成可供用户吸食的烟雾。
在其中一些实施方式中，多孔基底1还可以是多孔陶瓷、多孔金属等具备液体吸附能力的多孔材料。在其中一些具体实施例中，多孔基底1为多孔陶瓷；进一步地，在其中一些更具体实施例中，多孔基底1的孔隙率为30％～80％， 多孔基底1的孔径为10～30μm。
在其中一些实施方式中，发热层3为化学性能稳定、导电导热性能良好的金属层或合金层，发热层3为铜层、铁层、镍层、铬层、金层、银层、铂层、钯层、钼层等金属层以及金银合金层、金铂合金层、金银铂合金层、银钯合金层、银铂合金层、钯铜合金层、钯银合金层、镍铬合金层中的至少任一种。在其中一些具体实施例中，发热层3为镍铬合金层。镍铬合金层热性能良好，镍铬合金层价格相对于金层、银层、铂层、钯层等贵金属层或者金银合金层、金铂合金层、金银铂合金层、银钯合金层、银铂合金层、钯铜合金层、钯银合金层等贵金属合金层便宜。在其中一些更具体实施例中，发热层3为镍铬合金层，其Ni/(Ni+Cr)质量比例为0.2～0.9。根据电阻计算公式可知，发热层3的厚度决定了发热层3的电阻值大小，发热层3的厚度越薄时电阻值越大，发热层3的厚度越厚时电阻值越小，故可通过调节与控制发热层3的厚度以达到调节发热层3电阻值的目的。同时，在研发过程中，通过大量的实验，发明人发现：当发热层3的厚度太薄的话，薄层结构的发热层3比较疏松且连续性不好，影响发热层3电阻值的稳定性，发热层3比较容易被高温氧化或碳化；发热层3的厚度越厚，薄层结构的发热层3的连续性与致密性也会随之增加，使得发热层3的抗氧化或抗碳化的能力大幅度增强，从而增强发热层3电阻的稳定性。然而，当发热层3的厚度太厚的话，一方面，发热层3所需形成时间较长，从而大幅降低生产效率；另一方面，发热层3的应力越大，发热层3在通电使用过程中微观结构遭到破坏，影响发热层3电阻值的稳定性。以及考虑到发热层3的电阻太低存在发热层3短路过载的安全隐患，而发热层3的电阻太高存在达不到所需发热功率的问题，因此发热层3的常用电阻为0.8～2Ω。考虑发热层3的厚度对发热层3电阻的稳定性的影响，以及考虑发热层3的厚度与形成时长的正向关联，并结合发热层3的常用电阻为0.8～2Ω，综合上述考虑，发热层3的厚度设置为1～5μm。在其中一些具体实施例中，发热层3为镍铬合金层，镍铬合金层的厚度设置为1～5μm，以使得发热层3的电阻稳定性提高，发热层3的电阻处于常用电阻范围内，且发热层3的形成时间适中，进而使得雾化芯的电阻稳定性提高，雾化芯的发热功率较大，雾化芯的雾化效果好，雾化芯的制造成本可控。
在其中一些实施方式中，薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。由于雾化芯的发热面积更大，发热更均匀，不会出现局部温度过高现象，有利于提高气溶胶形成基质受热的均匀性，从而提高雾化效果。在其中一些具体实施例中，通过磁控溅射工艺沉积形成发热层3，发热层3为镍铬合金层，磁控溅射工艺的靶材功率密度为5～15W/cm 2，溅射气压为0.1～0.3Pa，溅射时间为30～90min。这样，通过磁控溅射工艺，在多孔基底1的至少部分雾化面11上，沉积形成厚度为1～5μm的镍铬合金层，镍铬合金层形成发热层3。
在通过薄膜沉积工艺沉积形成发热层3的过程中，发热层3形成的过程大致包括：1、岛初步形成：气态靶材达到多孔基底1的表面，附着并凝聚，形成一些均匀细小、而且可以运动的原子团，原地团被称为“岛”；2、岛数目饱和：“岛”不断接受新的沉积原子，并与其他小“岛”合并而逐渐长大，岛的数目快速达到饱和；3、岛长大形核：小“岛”合并不断进行的同时，空出来的多孔基底1的表面又会形成新的小“岛”；4、合并长大填充：小“岛”的形成与合并不断进行，尺寸较大的“岛”不断吞并附近尺寸较小的“岛”；5、填充孔隙成膜：孤立的小“岛”随着合并的进行相互连接成片，最后只留下一些孤立的孔洞和沟道，这些孔洞和沟道又不断被填充，形成形貌连续、覆盖完整的膜层。
请结合参阅图1和图2，在其中一些实施方式中，雾化芯还包括形成在发热层3与多孔基底1之间的过渡层2。在一具体实施方式中，通过薄膜沉积工艺在多孔基底1的至少部分雾化面11上沉积形成厚度为0.1～1μm的过渡层2，过渡层2背离多孔基底1的一面上形成有发热层3。由于多孔基底1的表面上凹点的势能最低，过渡层2形成的过程与上述发热层3形成的过程相同，因此过渡层2降低多孔基底1表面的粗糙度，使得发热层3具有良好的连续性，便于调节控制发热层3的厚度。而且过渡层2还可以阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，增强发热层3电阻的稳定性。此外，过渡层2能够起到调节发热层3与多孔基底1表面的应力匹配，增强发热层3与多孔基底1之间的附着力，使得发热层3牢固地结合于多孔基底1上，提高发热层3工作性能的稳定可靠性，延长雾化芯的使用寿命。在其中一些实施方式中，薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。
在其中一些具体实施例中，通过磁控溅射工艺沉积形成过渡层2，磁控溅射工艺的靶材功率密度为3～12W/cm 2，溅射气压为0.1～0.5Pa，溅射时间为20～100min，过渡层2的厚度为0.1～1μm。当过渡层2的厚度太薄时，过渡层2起不到上述降低多孔基底1表面的粗糙度以及阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3的作用；随着过渡层2厚度的增加，过渡层2能逐渐降低多孔基底1表面的粗糙度，逐渐阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，逐渐调节发热层3与多孔基底1表面的应力匹配；然而，当过渡层2的厚度太厚的话，过渡层2应力会出现大幅增加，造成过渡层2在雾化芯通电使用过程中微观结构遭到破坏，过渡层2无法阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，影响发热层3电阻值的稳定性。因此，将过渡层2的厚度设置为0.1～1μm，使得过渡层2降低多孔基底1表面的粗糙度，使得过渡层2阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，使得过渡层2调节发热层3与多孔基底1表面的应力匹配。优选地，将过渡层2的厚度设置为0.3～0.8μm，在便于降低多孔基底1表面的粗糙度的同时，有利于阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3。
在其中一些实施方式中，过渡层2与多孔基底1的应力值接近，使得过渡层2与多孔基底1的应力匹配较好。在其中一些具体实施例中，多孔基底1为多孔陶瓷，过渡层2为氮化铝层、氮化硅层、氮化铬层、碳化铬层或其他陶瓷层中的至少任一种。
请结合参阅图1和图2，在其中一些实施方式中，雾化芯还包括形成在发热层3上保护层4。在一具体实施方式中，通过薄膜沉积工艺，在发热层3背离多孔基底1的一面上，沉积形成厚度为0.5～3μm的保护层4。保护层4阻隔气溶胶形成基质及外界空气进入发热层3，从而避免发热层3通电使用过程中发生氧化或碳化，增强发热层3的抗氧化性和抗碳化性，增强发热层3电阻的稳定性，提高雾化芯的循环使用寿命。在其中一些实施方式中，薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。在其中一些具体实施例中，通过磁控溅射工艺沉积形成保护层4，磁控溅射工艺的靶材功率密度为3～12W/cm 2，溅射气压为0.1～0.5Pa，溅射时间为40～150min。当保护层4的厚度太薄时，保护层4起不到阻隔气溶胶形成基质及外界空气进入发热层3的作 用；随着保护层4厚度的增加，保护层4能逐渐阻隔气溶胶形成基质及外界空气进入发热层3；然而，当保护层4的厚度太厚的话，保护层4应力会出现大幅增加，造成保护层4在雾化芯通电使用过程中微观结构遭到破坏，保护层4无法阻隔气溶胶形成基质及外界空气进入发热层3，使得发热层3的抗氧化性和抗碳化性减弱，影响发热层3电阻的稳定性，缩短雾化芯的循环使用寿命。综合上述考虑，将保护层4的厚度设置为0.5～3μm，使得保护层4阻隔气溶胶形成基质及外界空气进入发热层3。优选地，将保护层4的厚度设置为0.8～1.5μm，能良好地阻隔气溶胶形成基质及外界空气进入发热层3。
在其中一些实施方式中，保护层4的化学性能稳定且结构致密。在其中一些具体实施例中，保护层4为氧化铝层、氧化硅层、氮化铝层、氮化硅层、氧化钛层、氮化钛层中的至少任一种。
请结合参阅图2，在其中一些实施方式中，发热层3上设有未沉积形成保护层4的成对设置的两个裸露部41，裸露部41用于实现电源装置与发热层3的电连接。
本发明实施例一还提供一种雾化器，雾化器包括上述任一实施例提供的雾化芯。因雾化器具有上述任一实施例提供的雾化芯的全部技术特征，故其具有雾化芯相同的技术效果。
本发明实施例一还提供一种气溶胶发生装置，气溶胶发生装置包括上述任一实施例提供的雾化芯或上述任一实施例提供的的雾化器。因气溶胶发生装置具有上述任一实施例提供的雾化芯或雾化器的全部技术特征，故其具有雾化芯相同的技术效果。
本发明实施例一还提供一种上述雾化芯的雾化芯制备方法，本发明实施例一中的雾化芯制备方法包括如下步骤：
步骤S1：沉积过渡层：通过薄膜沉积工艺，在多孔基底1的至少部分雾化面11上沉积形成过渡层2；
步骤S2：沉积发热层：通过薄膜沉积工艺，在过渡层2背离多孔基底1的一面上沉积形成发热层3；
步骤S3：沉积保护层：通过薄膜沉积工艺，在发热层3背离过渡层2的一面上沉积形成保护层4。
上述沉积过渡层步骤S1中，通过薄膜沉积工艺在多孔基底1的至少部分雾化面11上沉积形成厚度为0.1～1μm的过渡层2，过渡层2与多孔基底1的应力值接近。过渡层2降低多孔基底1表面的粗糙度，使得发热层3具有良好的连续性，便于调节控制发热层3的厚度。而且过渡层2还可以阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，增强发热层3电阻的稳定性。此外，过渡层2能够起到调节发热层3与多孔基底1表面的应力匹配，增强发热层3与多孔基底1之间的附着力，使得发热层3牢固地结合于多孔基底1上，提高发热层3工作性能的稳定可靠性，延长雾化芯的使用寿命。具体地，薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。当通过磁控溅射工艺沉积形成过渡层2时，磁控溅射工艺的靶材功率密度为3～12W/cm 2，溅射气压为0.1～0.5Pa，溅射时间为20～100min，过渡层2的厚度为0.1～1μm。当过渡层2的厚度太薄时，过渡层2起不到上述降低多孔基底1表面的粗糙度以及阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3的作用；而当过渡层2的厚度太厚的话，过渡层2应力会出现大幅增加，造成过渡层2在雾化芯通电使用过程中微观结构遭到破坏，过渡层2无法阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，影响发热层3电阻值的稳定性。因此，将过渡层2的厚度设置为0.1～1μm，使得过渡层2降低多孔基底1表面的粗糙度，使得过渡层2阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3，使得过渡层2调节发热层3与多孔基底1表面的应力匹配。优选地，将过渡层2的厚度设置为0.3～0.8μm，在便于降低多孔基底1表面的粗糙度的同时，有利于阻隔多孔基底1的钠、钾离子在电场作用下扩散进入发热层3。具体地，多孔基底1为多孔陶瓷，通过薄膜沉积工艺在多孔陶瓷的至少部分雾化面11上沉积形成过渡层2，过渡层2为氮化铝层、氮化硅层、氮化铬层、碳化铬层或其他陶瓷层中的至少任一种。
上述沉积发热层步骤S2中，通过薄膜沉积工艺在过渡层2背离多孔基底1的一面上沉积形成发热层3。具体地，发热层3为镍铬合金层，镍铬合金层的厚度设置为1～5μm。镍铬合金层热性能良好，镍铬合金层价格相对于金层、银层、铂层、钯层等贵金属层或者金银合金层、金铂合金层、金银铂合金层、银钯合金层、银铂合金层、钯铜合金层、钯银合金层等贵金属合金层便宜。在其 中一些更具体实施例中，发热层3为镍铬合金层，其Ni/(Ni+Cr)质量比例为0.2～0.9。根据电阻计算公式可知，发热层3的厚度决定了发热层3的电阻值大小，发热层3的厚度越薄时电阻值越大，发热层3的厚度越厚时电阻值越小，故可通过调节与控制发热层3的厚度以达到调节发热层3电阻值的目的。同时，在研发过程中，通过大量的实验，发明人发现：当发热层3的厚度太薄的话，薄层结构的发热层3比较疏松且连续性不好，影响发热层3电阻值的稳定性，发热层3比较容易被高温氧化或碳化；发热层3的厚度越厚，薄层结构的发热层3的连续性与致密性也会随之增加，使得发热层3的抗氧化或抗碳化的能力大幅度增强，从而增强发热层3电阻的稳定性。然而，当发热层3的厚度太厚的话，一方面，发热层3所需形成时间较长，从而大幅降低生产效率；另一方面，发热层3的应力越大，发热层3在通电使用过程中微观结构遭到破坏，影响发热层3电阻值的稳定性。以及考虑到发热层3的电阻太低存在发热层3短路过载的安全隐患，而发热层3的电阻太高存在达不到所需发热功率的问题，因此发热层3的常用电阻为0.8～2Ω。考虑发热层3的厚度对发热层3电阻的稳定性的影响，以及考虑发热层3的厚度与形成时长的正向关联，并结合发热层3的常用电阻为0.8～2Ω，综合上述考虑，发热层3为镍铬合金层，镍铬合金层的厚度设置为1～5μm，以使得发热层3的电阻稳定性提高，发热层3的电阻处于常用电阻范围内，且发热层3的形成时间适中，进而使得雾化芯的电阻稳定性提高，雾化芯的发热功率较大，雾化芯的雾化效果好，雾化芯的制造成本可控。具体地，薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。当通过磁控溅射工艺沉积形成发热层3，发热层3为镍铬合金层，磁控溅射工艺的靶材功率密度为5～15W/cm 2，溅射气压为0.1～0.3Pa，溅射时间为30～90min。这样，通过磁控溅射工艺，在多孔基底1的至少部分雾化面11上，沉积形成厚度为1～5μm的镍铬合金层，镍铬合金层为发热层3。
上述沉积保护层步骤S3中，通过薄膜沉积工艺，在发热层3背离多孔基底1的一面上，沉积形成厚度为0.5～3μm的化学性能稳定且结构致密的保护层4。保护层4阻隔气溶胶形成基质及外界空气进入发热层3，从而避免发热层3通电使用过程中发生氧化或碳化，增强发热层3的抗氧化性和抗碳化性，增强发热层3电阻的稳定性，提高雾化芯的循环使用寿命。在其中一些实施方式中， 薄膜沉积工艺可以是但不限于薄膜沉积工艺中的磁控溅射工艺。在其中一些具体实施例中，通过磁控溅射工艺沉积形成保护层4，磁控溅射工艺的靶材功率密度为3～12W/cm2，溅射气压为0.1～0.5Pa，溅射时间为40～150min。当保护层4的厚度太薄时，保护层4起不到阻隔气溶胶形成基质及外界空气进入发热层3的作用；随着保护层4厚度的增加，保护层4能逐渐阻隔气溶胶形成基质及外界空气进入发热层3；然而，当保护层4的厚度太厚的话，保护层4应力会出现大幅增加，造成保护层4在雾化芯通电使用过程中微观结构遭到破坏，保护层4无法阻隔气溶胶形成基质及外界空气进入发热层3，使得发热层3的抗氧化性和抗碳化性减弱，影响发热层3电阻的稳定性，缩短雾化芯的循环使用寿命。综合上述考虑，将保护层4的厚度设置为0.5～3μm，使得保护层4阻隔气溶胶形成基质及外界空气进入发热层3。优选地，将保护层4的厚度设置为0.8～1.5μm，能良好地阻隔气溶胶形成基质及外界空气进入发热层3。具体地，保护层4为氧化铝层、氧化硅层、氮化铝层、氮化硅层、氧化钛层、氮化钛层中的至少任一种。
可以理解的，上述雾化芯制备方法，主要包括采用薄膜沉积工艺将导电材料沉积在多孔陶瓷基底的至少部分外表面上，以在所述多孔陶瓷基底上形成发热层，获得表面具有发热层的雾化芯。在某些实施方式中，当不包括过渡层2和/或保护层4时，对应的膜层形成步骤S1、S3可以进行相应的省略。
在其中另一些实施方式中，上述雾化芯的雾化芯制备方法还包括如下的退火老化处理：
步骤S4：采用退火老化工艺，对雾化芯进行退火热处理。
在其中一些实施方式中，上述雾化芯的雾化芯制备方法还包括如下的通电老化处理步骤：
步骤S5：采用通电老化工艺，对退火热处理后的雾化芯进行供电，退火热处理后的雾化芯通电后发热，以对发热层3的微观结构进行老化处理。
上述步骤S4中，采用退火老化工艺，对带有发热层3的雾化芯进行退火热处理。退火热处理目的是消除发热层3的微观缺陷，促使发热层3的微观结构中的晶粒长大，使得发热层3更加致密，从而提高雾化芯在循环使用过程中电阻值的稳定性，进而使得雾化芯发热功率稳定，加热均匀，雾化效果好。结合 上述发热层3形成的过程，从热力学条件来看，在一定体积的发热层3中，发热层3内晶粒越粗，总的晶界表面积就越小，总的表面能越低。由于晶粒粗化可以减小表面能，使发热层3处于较稳定的、自由能较低的状态，要实现向稳定的、自由能较低方向的变化趋势，需要导电材料原子有较强的扩散能力，以完成晶粒长大时晶界的迁移运动，而高温的退火热处理正使其具备了这一条件。因此，将带有发热层3的雾化芯的进行退火热处理，可促使发热层3的微观结构中的晶粒长大，使得发热层3更加致密，提高发热层3在通电使用过程中电阻的稳定性，从而提高雾化芯在通电使用过程中电阻的稳定性。
在其中一些具体实施例中，对雾化芯的发热层3进行退火热处理的温度为500～800℃，退火热处理的时间为5～60min。上述步骤S4中，雾化芯退火热处理过程，是在保护气体氛围中进行的。具体地，将雾化芯置于管式炉中进行退火热处理，在雾化芯退火热处理过程中，不断向管式炉中充入保护气体，以防止雾化芯退火热处理过程中发热层3发生氧化。保护气体可以是但不限于氮气。
可以理解地，上述过渡层2以及保护层4，在退火热处理过程中的变化趋势与发热层3相同。具体地，从热力学条件来看，在一定体积的过渡层2或保护层4中，过渡层2或保护层4内晶粒越粗，总的晶界表面积就越小，总的表面能越低。由于晶粒粗化可以减小表面能，使过渡层2或保护层4处于较稳定的、自由能较低的状态，要实现向稳定的、自由能较低方向的变化趋势，需要导电材料原子有较强的扩散能力，以完成晶粒长大时晶界的迁移运动，而高温的退火热处理正使其具备了这一条件。因此，将雾化芯的过渡层2或保护层4进行退火热处理，可促使过渡层2或保护层4的微观结构中的晶粒长大，使得过渡层2或保护层4更加致密，从而提高雾化芯在循环使用过程中电阻值的稳定性。
在上述步骤S5中，通过将退火热处理后的雾化芯进行通电老化处理：对退火热处理后的雾化芯进行供电，退火热处理后的雾化芯通电后发热，对发热层3的微观结构进行老化处理，以增强发热层3的电学稳定性。在其中一些具体实施例中，在在大气氛围下，采用直流稳压电源对雾化芯的发热层3进行供电，通电功率为6～8W，通电时间为1～20min。上述将雾化芯进行通电老化处理的 目的是，提高雾化芯通电使用过程中电阻的稳定性。
本发明实施例一中的雾化芯制备方法，与现有技术相比，采用退火老化工艺，对雾化芯的发热层3进行退火热处理，使发热层3微观结构中的晶粒长大，促使发热层3更加致密，减少发热层3的微观缺陷；然后，对退火热处理后的雾化芯进行通电发热处理，以对发热层3的微观结构进行进一步的老化处理。这样，雾化芯在经过退火热处理及通电老化处理后，能够改善并提高发热层3电阻的稳定性，增强了发热层3的电学稳定性，进而使得发热层3发热更均匀，防止雾化芯出现局部温度过高的现象，可对气溶胶形成基质具有良好的雾化效果。
另外，值得注意的是，本发明实施例一中是先对具有发热层3的雾化芯进行退火热处理，而后对退火热处理的雾化芯进行通电老化处理。上述加工处理的次序不能发生调换的，这是为了模拟雾化芯真实的使用氛围，由于通电老化处理一般是在大气氛围下进行的，而退火热处理通常是在保护气体氛围下进行的，如果先对雾化芯进行通电老化处理，会导致保护层4的稳定性较差，且造成发热层3会在大气氛围下发生氧化或碳化，进而影响发热层3的使用寿命。因此，先在保护气体氛围下对具有发热层3的雾化芯进行退火热处理，使得发热层3内部结构的晶粒粗化以减小表面能，从而使雾化芯上的过渡层2、发热层3以及保护层4处于较稳定的、自由能较低的状态，进而使过渡层2、发热层3以及保护层4更加致密，减少过渡层2、发热层3以及保护层4的微观缺陷，提高过渡层2、发热层3以及保护层4的稳定性。一方面，经退火热处理后，稳定且致密的过渡层2可以阻隔多孔陶瓷基底1的钠、钾离子在电场作用下扩散进入发热层3，进一步提高发热层3的电阻稳定性；另一方面，经退火热处理后，稳定且致密的发热层3可以增强发热层3的电阻稳定性；再一方面，经退火热处理后，稳定且致密的保护层4可使发热层3与气溶胶形成基质及空气中的氧隔离，提高发热层3的抗氧化性能和抗碳化性能，从而提高发热层3的电阻稳定性。而后，在大气氛围下对具有发热层3的雾化芯进行通电老化处理：对过渡层2、发热层3以及保护层4的微观结构进行老化处理，更进一步提高发热层3的电阻稳定性。
实施例二
实施例二中的雾化芯与实施例一中的雾化芯区别在于：
雾化芯还包括用于将发热层3与电源装置进行电连接的两个电极5。请结合参阅图4和图5，在一具体实施例方式中，电极5通过厚膜沉积工艺形成于多孔基底1的雾化面11上，电极5的厚度为20～60μm。一方面，使电极5牢固地结合在多孔基底1上，防止电极5在高温高速气溶胶形成基质流体冲击下发生脱落，另一方面，使得电极5在与金属弹针电连接时有足够强度支撑其承受来自于金属弹针的抵压作用力，再一方面，使得电极5有足够的接触面积与金属弹针电连接，则可方便通过金属弹针与电源装置实现电连接，进而便于发热层3通过电极5与电源装置实现电连接。
在其中一些实施方式中，电极5为金层、银层、铂层、钯层、铝层、铜层、金银合金层、银铂合金层、银钯合金层中的至少任一种。在其中一些具体实施例中，采用丝网印刷工艺在多孔基底1上丝印金属浆料，烘干、烧结后形成电极5。金属浆料为由金、银、铂、钯、铝、铜、金银合金、银铂合金、银钯合金中的至少任一种，以在多孔基底1上形成电极5。
请结合参阅图3和图4，在其中一些实施方式中，电极5成对并间隔布置于雾化面11上的第一区域11a，发热层3至少覆设于雾化面11上的第二区域11b，第二区域11b为雾化面11上于第一区域11a之外的区域，以使第一区域11a与第二区域11b在雾化面11上为连续区域，发热层3包括形成于多孔基底1的雾化面11上的第二区域11b的发热部31、形成在其中一个电极5至少部分表面的第一连接部32，形成在另一个电极5至少部分表面的第二连接部33，第一连接部32、第二连接部33分别与发热部31连接。通过面与面的接触形式将发热层3与相应电极5电性相连，避免电极5与发热层3出现接触不良，从而提高向发热层3供电的稳定可靠性。
请结合参阅图3和图4，在其中一些实施方式中，电极5成对并间隔布置于雾化面11上的第一区域11a，过渡层2形成于雾化面11上的第二区域11b，发热层3覆设于过渡层2背离多孔基底1的一面上。可以理解地，该实施方式中，第二区域11b同样为雾化面11上于第一区域11a之外的区域，以使第一区域11a与第二区域11b在雾化面11上为连续区域。发热层3包括形成于过渡层 2背离多孔基底1的一面上的发热部31、形成在其中一个电极5至少部分表面的第一连接部32，形成在另一个电极5至少部分表面的第二连接部33，第一连接部32、第二连接部33分别与发热部31连接。通过面与面的接触形式将发热层3与相应电极5电性相连，避免电极5与发热层3出现接触不良，从而提高向发热层3供电的稳定可靠性。
请结合参阅图4和图5，在其中一些实施方式中，电极5的厚度大于过渡层2、发热部31以及保护层4的厚度之和，两个电极5之间可以形成凹槽6，凹槽6内由凹槽6的内底面自下往上依次层叠设置有过渡层2、发热部31和保护层4，将过渡层2、发热部31与保护层4容置并定位于两个电极5之间的凹槽6中，有利于增强过渡层2、发热部31与保护层4结合于多孔基底1上的稳固性。
请结合参阅图4，在一具体实施方式中，发热层3还至少部分形成在电极5上。
请结合参阅图4，在其中一些具体实施例中，第一连接部32包括由发热部31靠近其中一个电极5的一侧并沿该电极5的厚度方向弯折延伸的第一侧部321，第二连接部33包括由发热部31靠近另一个电极5的一侧并沿该电极5的厚度方向弯折延伸的第二侧部331，第一侧部321与第二侧部331分别结合于相应电极5的对应侧面上。可通过第一侧部321与第二侧部331分别与相应电极5的对应侧面结合，通过面与面的接触形式将发热层3与相应电极5电性相连，避免电极5与发热层3出现接触不良，从而提高向发热层3供电的稳定可靠性。
请结合参阅图4，在其中一些更具体实施例中，第一连接部32还包括形成于其中一个电极5背离多孔基底1的一面上的第一结合部322，第二连接部33还包括形成于另一个电极5背离多孔基底1的一面上的第二结合部332，第一结合部322的对应侧边与第一侧部321的对应侧边相连，第二结合部332的对应侧边与第二侧部331的对应侧边相连。一方面增大了电极5与发热层3的接触面积，有利于提高电极5向发热层3供电的稳定性；另一方面增大了电极5与发热层3的接触面积，从而减小了发热层3与电极5的接触电阻，有利于将发热区域集中在发热部31；再一方面可增强发热层3的附着力，使得发热层3 更加牢固地结合于多孔基底1及电极5上。具体地，上述实施例中的雾化面11为一平面。
可以理解地，发热部31、第一连接部32以及第二连接部33是形成发热层3时一次形成的，在第一连接部32不包括第一结合部322，第二连接部33不包括第二结合部332的情况下，只需要在通过薄膜沉积工艺形成发热层3时，对电极5背离多孔基底1的一面进行掩膜处理，使发热层3无法沉积形成在电极5背离多孔基底1的一面。
本发明实施例二还提供一种雾化器，雾化器包括上述任一实施例提供的雾化芯。因雾化器具有上述任一实施例提供的雾化芯的全部技术特征，故其具有雾化芯相同的技术效果。
本发明实施例二还提供一种气溶胶发生装置，气溶胶发生装置包括上述任一实施例提供的雾化芯或上述任一实施例提供的的雾化器。因气溶胶发生装置具有上述任一实施例提供的雾化芯或雾化器的全部技术特征，故其具有雾化芯相同的技术效果。
本发明实施例二还提供一种上述雾化芯的雾化芯制备方法，本发明实施例二中的雾化芯制备方法与实施例一中的雾化芯制备方法区别在于：
上述雾化芯的雾化芯制备方法还包括：
步骤S0：电极制作：采用丝网印刷的方式在多孔基底1上丝印金属浆料，烘干、烧结后形成电极5。可以理解的，在其他实施方式中，电极5也可以通过其他方式形成。
在其中一些实施方式中，在沉积过渡层步骤之前，将丝网印刷有电极5的多孔基底1放入真空室中，抽真空至0.003Pa，采用考夫曼型离子源对对多孔基底1进行离子清洗2～10min。
实施例三
实施例三中的雾化芯与实施例二中的雾化芯区别在于：雾化面11不是一个平面。具体地，请结合参阅图6和图7，多孔基体1的一表面上分别凹陷形成有第一凹陷部13和第二凹陷部14，第一凹陷部13与第二凹陷部14间隔设置，以使第一凹陷部13与第二凹陷部14之间的部分形成凸起部12，雾化面11包 括凸起部12背离多孔基体1的第一表面11c、第一凹陷部13背离多孔基体1的第二表面11d、第二凹陷部14背离多孔基体1的第三表面11e、连接第一表面11c与第二表面11d的第一过渡面11f，以及连接第一表面11c与第三表面11e的第二过渡面11g。其中一个电极5沉积形成在第一凹陷部13中，另一个电极5沉积形成在第二凹陷部14中，发热部31沉积形成在凸起部12的第一表面11c上，两个电极5的上端面高于发热部31的上端面。
实施例四
实施例四中的雾化芯与实施例三中的雾化芯区别在于：两个电极5的上端面与发热层3的下端面齐平，发热层3为形成在多孔基底1和电极5上的一层连续的板片状结构层。具体地，请结合参阅图8，发热层3包括形成于多孔基底1的雾化面11上的第二区域11b的发热部31、形成在其中一个电极5至少部分表面的第一连接部32，形成在另一个电极5至少部分表面的第二连接部33，第一连接部32、第二连接部33分别与发热部31连接。第一连接部32包括形成于其中一个电极5背离多孔基底1的一面上的第一结合部322，第二连接部33包括形成于另一个电极5背离多孔基底1的一面上的第二结合部332。第一结合部322的对应侧边与发热部31的对应侧边相连，第二结合部332的对应侧边与发热部31的对应侧边相连。也就是说，第一连接部32可以不包括第一侧部321，第二连接部33可以不包括第二侧部331，第一连接部32的第一结合部322分别连接其中一个电极5和发热部31，第二连接部33的第二结合部332分别连接另一个电极5和发热部31。一方面增大了电极5与发热层3的接触面积，有利于提高电极5向发热层3供电的稳定性；另一方面增大了电极5与发热层3的接触面积，从而减小了发热层3与电极5的接触电阻，有利于将发热区域集中在发热部31；再一方面可增强发热层3的附着力，使得发热层3更加牢固地结合于多孔基底1及电极5上。具体地，上述实施例中的雾化面11为一平面。
实验例
为使本发明上述实施细节和操作能清楚地被本领域技术人员理解，以及本 发明雾化芯制备方法的进步性能显著地体现，以下通过具体实验例对本发明的雾化芯制备方法的具体实施过程进行举例说明。
实验例1
1)采用丝网印刷工艺在多孔基底1上丝印银钯金属浆料，烘干、烧结后形成电极5。其中，电极5烘干的温度为80，电极5烘干的时间20min，烧结的条件为在910℃温度环境保温20min；
2)将丝网印刷有银钯金属电极5的多孔基底1放入磁控溅射真空室中，抽真空至0.003Pa，采用考夫曼型离子源对基底进行离子清洗5min，离子源功率为200W；
3)采用磁控溅射工艺，在离子清洗后的多孔基底1的外表面直接沉积发热层3。其中，所使用的镍铬合金靶材中Ni/(Ni+Cr)的质量比为80％，镍铬合金靶材溅射功率密度为10W/cm 2，溅射气压为0.3Pa，溅射时间为30min。
采用台阶仪，对实验例1中沉积于多孔基底1上的发热层3进行厚度测试，测得发热层3的厚度为1μm。将实验例1制备的雾化芯标记为S-1，将此雾化芯S-1与电池、烟弹组装成电子烟在电子烟抽烟机上进行模拟抽吸测试。测试结束后将雾化芯S-1取出测量其电阻值的变化。从图9中可以明显看出在前3000次循环，雾化芯S-1的阻值在测试初期变化非常明显，而后续电阻值变化幅度明显降低。雾化芯S-1电阻值循环测试初期明显变化的原因：一方面是由于在高温条件下，多孔基底1中的钠、钾离子电场作用下渗入到发热层3中，使得发热层3的微观结构发生了变化；另一方面是由于在高温条件下，发热层3与气溶胶形成基质或空气中的氧发生了碳化或氧化。
实验例2
实验例2与实验例1的区别在于：磁控溅射发热层3的时间不同，实验例2中的溅射时间为60min，以增加多孔基底1上沉积发热层3的厚度。采用台阶仪，测得实验例2中发热层3的厚度为3μm，并将实验例2制备的雾化芯标记为S-2。与实验例1一样组装成电子烟在电子烟抽烟机上进行模拟抽吸测试，测试结束后测量雾化芯电阻值变化。
实验例3
实验例3与实验例1的区别在于：磁控溅射发热层3的时间不同，实验例 3中的溅射时间为90min，以增加多孔基底1上沉积发热层3的厚度。采用台阶仪，测得实验例3中发热层3的厚度为5μm，并将实验例3制备的雾化芯标记为S-3。与实验例1一样组装成电子烟在电子烟抽烟机上进行模拟抽吸测试，测试结束后测量雾化芯电阻值变化。
实验例4
此实验例与实验例2的区别在于：在沉积发热层3之前，先采用掩膜将丝网印刷于多孔基底1上的银钯金属电极5遮蔽，再在多孔基底1的至少部分外表面上沉积氮化铝过渡层2，防止氮化铝沉积在银钯金属电极5上。具体地，采用磁控溅射工艺，在多孔基底1上沉积氮化铝。其中，反应气体为氮气，氩气为工作气体，氮气/氩气气体流量比为1.2，溅射气压为0.35Pa，金属铝靶材溅射功率密度为8W/cm 2，溅射时间为20min。采用台阶仪，测得实验例4中氮化铝过渡层2的厚度为0.1μm。沉积完氮化铝过渡层2后，采用与实验例1相同的工艺步骤，继续在氮化铝过渡层2背离多孔基底1的一面上沉积发热层3。同时采用与实验例1相同的仪器及测试方法，测得实验例4中的发热层3厚度为3μm。并且，将实验例4制备的雾化芯标记为S-4，采用同实验例1一样的方法，对雾化芯S-4进行循环可靠性测试，并测量其电阻值。
实验例5
实验例5与实验例4的区别在于：磁控溅射氮化铝过渡层2的时间不同，溅射时间为50min。采用台阶仪，测得实验例5中的氮化铝过渡层2的厚度为0.5μm，并将实验例5制备的雾化芯标记为S-5。采用同实验例1一样的方法，对雾化芯S-5进行循环可靠性测试，并测量其电阻值。
实验例6
实验例6与实验例4的区别在于：磁控溅射氮化铝过渡层2的时间不同，溅射时间为100min。采用台阶仪，测得实验例6中的氮化铝过渡层2的厚度为1μm，并将实验例6制备的雾化芯标记为S-6。采用同实验例1一样的方法，对雾化芯S-6进行循环可靠性测试，并测量其电阻值。
实验例7
实验例7与实验例5的区别在于：在发热层3上沉积氧化铝保护层，即在实验例5中沉积完发热层3后，采用磁控溅射工艺继续在发热层3背离多孔基 底1的一面上沉积氧化铝保护层。磁控溅射氧化铝保护层之前，采用掩膜将丝网印刷于多孔基底1上的银钯金属电极5遮蔽，防止氧化铝沉积在银钯金属电极5上。具体地，沉积氧化铝保护层采用磁控溅射工艺，磁控溅射的反应气体为氧气，氩气为工作气体，氧气/氩气气体流量比为1.5，溅射气压为0.4Pa，金属铝靶材溅射功率密度为9W/cm 2，溅射时间为40min。采用台阶仪，测得实验例7中的氧化铝保护层厚度为0.5μm，并将实验例7制备的雾化芯标记为S-7。采用同实验例1一样的方法，对雾化芯S-7进行循环可靠性测试，并测量其电阻值。
实验例8
实验例8与实验例7的区别在于：磁控溅射氧化铝保护层的时间不同，溅射时间为90min。采用台阶仪，测得实验例8中的氧化铝保护层厚度为1.5μm，并将实验例8制备的雾化芯标记为S-8。采用同实验例1一样的方法，对雾化芯S-8进行循环可靠性测试，并测量其电阻值。
实验例9
实验例9与实验例7的区别在于：磁控溅射氧化铝保护层的时间不同，溅射时间为150min。采用台阶仪，测得实验例9中的氧化铝保护层厚度为3μm，并将实验例9制备的雾化芯标记为S-9。采用同实验例1一样的方法，对雾化芯S-9进行循环可靠性测试，并测量其电阻值。
实验例10
实验例10与实验例8的区别在于：将实验例8中制备的雾化芯，置于管式炉中进行退火热处理。其中，管式炉内的保护气体为氮气，退火温度为500℃，退火时间为10min。将实验例10中退火处理后的雾化芯标记为S-10，采用同实验例1一样的方法，对雾化芯S-10进行循环可靠性测试，并测量其电阻值。
实验例11
实验例11与实验例10的区别在于：退火温度温度不同，退火温度为700℃。将实验例11中退火处理后的雾化芯标记为S-11，采用同实验例1一样的方法，对雾化芯S-11进行循环可靠性测试，并测量其电阻值。
实验例12
实验例12与实验例10的区别在于：退火温度温度不同，退火温度为800℃。 将实验例12中退火处理后的雾化芯标记为S-12，采用同实验例1一样的方法，对雾化芯S-12进行循环可靠性测试，并测量其电阻值。
实验例13
实验例13与实验例11的区别在于：将实验例11中制备的雾化芯，进行通电发热老化处理。其中，通电发热老化处理所使用的电源为直流稳压电源，通电功率为5W，通电2s后停5s然后继续通电2s停5s，一共进行100个循环。将实验例13中通电发热老化处理后的雾化芯标记为S-13，采用同实验例1一样的方法，对雾化芯S-13进行循环可靠性测试，并测量其电阻值。
实验例14
实验例14与实验例13的区别在于：通电功率为7W。将实验例14中通电发热老化处理后的雾化芯标记为S-14，采用同实验例1一样的方法，对雾化芯S-14进行循环可靠性测试，并测量其电阻值。
实验例15
实验例15与实验例13的区别在于：通电功率为9W。将实验例15中通电发热老化处理后的雾化芯标记为S-15，采用同实验例1一样的方法，对雾化芯S-15进行循环可靠性测试，并测量其电阻值。
雾化芯相关性能测试：
将上述实验例1至实验例15中的雾化芯，分别进行循环可靠性测试，并测量其电阻值。测试结果如下述表1。
表1实验例1至实验例15中的雾化芯循环测试电阻值数据表
Figure PCTCN2022110238-appb-000001
Figure PCTCN2022110238-appb-000002
需要说明的，表1中总循环的变化电阻值是指第3000次循环测试后测试样品的电阻值与测试样品的初始电阻值之间的差值，表1中总循环的变化电阻率是指测试样品的上述变化电阻值与测试样品的初始电阻值得出的比率。可以理解的，总循环的变化电阻值越小和/或总循环的变化电阻率越小，可以判断为循环测试后的电阻值变化减小，测试样品在循环测试中的电阻稳定性越高。
需要说明的，表1中雾化芯S-1至雾化芯S-15的循环测试数据均为一件测试样品通过测试得出的数据。除去雾化芯S-1至雾化芯S-3因分别具有不同厚度的发热层3所以初始电阻值不同。在其余雾化芯中，在循环测试前，控制单一变化量的对比例会从同一批次多个测试样品中挑选初始电阻值较为接近的测试样品，例如：雾化芯S-4至雾化芯S-6控制为过渡层2厚度不同的单一变化量，从同一批次的发热层3的厚度为3μm的雾化芯S-2的多个测试样品中挑选初始电阻值较为接近的测试样品。
结合图9、图11及表1可以看出，在前3000次循环，实验例1中的雾化芯S-1的阻值变化非常明显，其循环测试的变化电阻值达到1.21Ω，变化电阻率达到77.6％。实验例1中的雾化芯S-1在循环测试中电阻值明显变化的原因： 一方面是由于在高温条件下，多孔基底1中的钠、钾离子电场作用下渗入到发热层3中，使得发热层3的微观结构发生了变化，以及多孔基底1中的钠、钾离子电场作用下渗入到发热层3中；另一方面是由于在高温条件下，发热层3与气溶胶形成基质或空气中的氧发生了碳化或氧化。
结合图9、图11及表1可以看出，实验例1中的雾化芯S-1，其发热层3的厚度为1μm，其初始电阻值为1.56Ω，实验例2中的雾化芯S-2，其发热层3的厚度为3μm，其初始电阻值为1.25Ω，以及实验例3中的雾化芯S-3，其发热层3的厚度为5μm，其初始电阻值为1.07Ω，因实验例1至实验例3中的发热层3厚度分别不同，其对应的初始电阻值也会随之不同：发热层3厚度越大，其初始电阻值越低。这样，就可以通过改变发热层3厚度来调整雾化芯的初始电阻值。
结合图11及表1还可以看出，实验例1中的雾化芯S-1，其发热层3的厚度为1μm，其循环测试的变化电阻值为1.21Ω，变化电阻率为77.6％，实验例2中的雾化芯S-2，其发热层3的厚度为3μm，其循环测试的变化电阻值为0.67Ω，变化电阻率为53.6％，及实验例3中的雾化芯S-3，其发热层3的厚度为5μm，其循环测试的变化电阻值为0.54Ω，变化电阻率为50.5％，因分别具有不同厚度的发热层3，发热层3厚度越大，其循环测试后阻值变化减小。这是由于发热层3是通过薄膜沉积方式形成于多孔基底1上，如果多孔基底1表面粗糙度较大，而发热层3比较薄的话，发热层3呈不连续、疏松状分布，使用过程中发热层3容易被氧化或碳化，影响其电阻值的稳定性。发热层3越厚，发热层3呈连续性、致密状分布，提高抗氧化或碳化能力，从而使得电阻值越稳定。
结合图9、图12及表1中测试数据可以看出，以实验例2中的雾化芯S-2为对比例，其循环测试的变化电阻值为0.67Ω，变化电阻率为53.6％，实验例4中的雾化芯S-4循环测试的变化电阻值为0.53Ω，变化电阻率为42.7％，实验例5中的雾化芯S-5循环测试的变化电阻值为0.4Ω，变化电阻率为32.5％，及实验例6中的雾化芯S-6循环测试的变化电阻值为0.47Ω，变化电阻率为37.9％，雾化芯在前3000次循环测试中，其电阻值的变化均要小于实验例2中的雾化芯S-2雾化芯的电阻值，说明氮化铝过渡层2的设置，提高了雾化芯的发热层3的电阻稳定性。这是由于氮化铝过渡层2能降低多孔基底1表面的粗糙度，提 高发热层3的连续性，同时氮化铝过渡层2也能够阻隔多孔基底1中钠钾离子渗入发热层3中，达到改善和提高雾化芯的发热层3电阻稳定性的目的。
结合图12及表1可以看出，以实验例2中的雾化芯S-2为对比例，其循环测试的变化电阻值为0.67Ω，变化电阻率为53.6％，实验例4至实验例6中的雾化芯S-4、雾化芯S-5和雾化芯S-6中，实验例4中的雾化芯S-4的氮化铝过渡层2厚度为0.1μm，其循环测试的变化电阻值为0.53Ω，变化电阻率为42.7％，电阻值稳定性有所提高；实验例5中的雾化芯S-5的氮化铝过渡层2厚度为0.5μm，其循环测试的变化电阻值为0.4Ω，变化电阻率为32.5％，电阻值稳定性进一步提高。实验例6中的雾化芯S-6的氮化铝过渡层2厚度为1μm，其循环测试的变化电阻值为0.47Ω，变化电阻率为37.9％，电阻值稳定性反而出现下降。这是由于氮化铝过渡层2能阻隔多孔基底1中的钠钾离子在电场下渗入发热层3，氮化铝过渡层2在一定厚度范围内，其厚度越厚其阻隔效果越好。但随着氮化铝过渡层2厚度提高到1μm，氮化铝过渡层应力会出现大幅度增加，造成发热层3在循环测试过程中微观结构遭到破坏，致使雾化芯循环测试的电阻值稳定性反而出现下降。
结合图9、图13及表1中测试数据可以看出，以实验例5中的雾化芯S-5为对比例，其循环测试的变化电阻值为0.4Ω，变化电阻率为32.5％，实验例7中的雾化芯S-7，在3000次循环测试后，其循环测试的变化电阻值为0.34Ω，变化电阻率为27％，实验例8中的雾化芯S-8，在3000次循环测试后，其循环测试的变化电阻值为0.24Ω，变化电阻率为18.9％，实验例9中的雾化芯S-9，在3000次循环测试后，其循环测试的变化电阻值为0.29Ω，变化电阻率为22.7％，实验例7至实验例9中的雾化芯S-7、雾化芯S-8和雾化芯S-9的电阻值变化明显要小于实验例5中的雾化芯S-5，这是由于氧化铝保护层的设置，使发热层3与气溶胶形成基质及空气中的氧隔离，避免长期使用过程中发热层3被高温碳化和氧化而影响电阻值的稳定性，从而改善雾化芯的发热层3的电阻稳定性，且提高雾化芯的循环使用寿命。
结合图13及表1可以看出，以实验例5中的雾化芯S-5为对比例，其循环测试的变化电阻值为0.4Ω，变化电阻率为32.5％，实验例7至实验例9中的雾化芯S-7、雾化芯S-8和雾化芯S-9中，实验例7中的雾化芯S-7的氧化铝保护 层厚度为0.5μm，其循环测试的变化电阻值为0.34Ω，变化电阻率为27％，其循环测试的电阻值稳定性有所提高，实验例8中的雾化芯S-8的氧化铝保护层厚度为1.5μm，其循环测试的变化电阻值为0.24Ω，变化电阻率为18.9％，其循环测试的电阻值稳定性进一步提高。实验例9中的雾化芯S-9的氧化铝保护层厚度为3μm，其循环测试的变化电阻值为0.29Ω，变化电阻率为22.7％，其循环测试的电阻值稳定性反而出现下降。这是由于氧化铝保护层在一定厚度范围内，其厚度越厚其氧化铝保护层的致密性越高，能够更好地将发热层3与气溶胶形成基质及空气中的氧隔离。但随着氧化铝保护层厚度提高到3μm，氧化铝保护层应力会出现大幅度增加，造成氧化铝保护层在循环测试过程中微观结构遭到破坏，致使雾化芯循环测试的电阻值稳定性反而出现下降。
结合图9、图14及表1中测试数据可以看出，以实验例8中的雾化芯S-8为对比例，其循环测试的变化电阻值为0.24Ω，变化电阻率为18.9％，实验例10中的雾化芯S-10，在3000次循环测试后，其循环测试的变化电阻值为0.18Ω，变化电阻率为13.5％，实验例11中的雾化芯S-11，在3000次循环测试后，其循环测试的变化电阻值为0.13Ω，变化电阻率为9.7％，实验例12中的雾化芯S-12，在3000次循环测试后，其循环测试的变化电阻值为0.21Ω，变化电阻率为15.4％，实验例10至实验例12中的雾化芯S-10、雾化芯S-11和雾化芯S-12的电阻值变化明显要小于实验例8中的雾化芯S-8，这是由于退火热处理能减少过渡层2、发热层3和保护层4的微观缺陷，使发热层3的微观结构中的晶粒长大，促使发热层3更加致密，从而提高雾化芯的发热层3循环测试电阻的稳定性。
结合图14及表1中测试数据可以看出，以实验例8中的雾化芯S-8为对比例，其循环测试的变化电阻值为0.24Ω，变化电阻率为18.9％，实验例10至实验例12中的雾化芯S-10、雾化芯S-11和雾化芯S-12中，实验例10中的雾化芯S-10，其循环测试的变化电阻值为0.18Ω，变化电阻率为13.5％，实验例10中的雾化芯S-10的循环测试的电阻值稳定性，相对于实验例8中未退火热处理的雾化芯S-8的循环测试的电阻值稳定性，没有明显的提高，这是由于500℃的温度过低，没有达到发热层3微观结构中的晶粒长大需要的能量。实验例11中将退火温度提高至700℃，实验例11中的雾化芯S-11，其循环测试的变化电 阻值为0.13Ω，变化电阻率为9.7％，实验例11中的雾化芯S-11循环测试的电阻稳定性明显提高。但随着实验例12中将退火温度进一步提高至800℃，实验例12中的雾化芯S-12，其循环测试的变化电阻值为0.21Ω，变化电阻率为15.4％，实验例12中的雾化芯S-12循环测试电阻稳定性反而降低，这是因为过高的温度会破坏过渡层2、发热层3或保护层4的微观结构，影响发热层3循环测试电阻的稳定性。
结合图9、图15及表1中测试数据可以看出，以实验例11中的雾化芯S-11为对比例，其循环测试的变化电阻值为0.13Ω，变化电阻率为9.7％，实验例13中的雾化芯S-13，在3000次循环测试后，其循环测试的变化电阻值为0.1Ω，变化电阻率为6.8％，实验例14中的雾化芯S-14，在3000次循环测试后，其循环测试的变化电阻值为0.07Ω，变化电阻率为4.8％，实验例13至实验例14中的雾化芯S-13和雾化芯S-14的电阻值变化明显要小于实验例11中的雾化芯S-11，这是通电发热老化处理能提高发热层3电学稳定性，达到改善和提高高发热层3循环测试电阻的稳定性的目的。
结合图10、图15及表1中测试数据可以看出，以实验例11中的雾化芯S-11为对比例，其循环测试的变化电阻值为0.13Ω，变化电阻率为9.7％，实验例13中的雾化芯S-13中，其通电发热老化处理的功率为5W，其循环测试的变化电阻值为0.1Ω，变化电阻率为6.8％，实验例13中的雾化芯S-13的循环测试的电阻值稳定性，相对于实验例11中未退火热处理的雾化芯S-11的循环测试的电阻值稳定性，没有明显的提高。这是由于通电发热老化处理的功率过低，发热层3的发热量较小，发热层3的微观结构改善较小，从而发热层3电阻的稳定性提高幅度小。实验例14中的雾化芯S-14中，其通电发热老化处理的功率为7W，其循环测试的变化电阻值为0.07Ω，变化电阻率为4.8％，能够明显提高雾化芯的发热层3循环电阻的稳定性。而在实验例15中的雾化芯S-15中，通电发热老化处理的功率增加至9W，其循环测试的变化电阻值为0.41Ω，变化电阻率为27.7％，雾化芯的发热层3循环电阻的稳定性反而出现下降。这是由于通电发热老化处理的功率过高，发热层3的发热量越大，过大的发热量会 破坏发热层3的微观结构，从而降低发热层3电阻的稳定性。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种雾化芯制备方法，其特征在于，包括如下步骤：
    采用薄膜沉积工艺将导电材料沉积在多孔陶瓷基底的至少部分外表面上，以在所述多孔陶瓷基底上形成发热层，获得表面具有发热层的雾化芯；
    采用退火老化工艺，对所述雾化芯进行退火热处理。
  2. 如权利要求1所述的雾化芯制备方法，其特征在于，所述退火热处理步骤中，所述退火热处理的温度为500～800℃，所述退火热处理的时间为5～60分钟。
  3. 如权利要求1所述的雾化芯制备方法，其特征在于，所述退火热处理步骤中，所述雾化芯退火热处理过程，在保护气体氛围中进行。
  4. 如权利要求1所述的雾化芯制备方法，其特征在于，所述雾化芯制备方法还包括通电老化处理步骤，所述通电老化处理步骤包括：采用通电老化工艺，对退火热处理后的所述雾化芯进行供电，退火热处理后的所述雾化芯通电后发热，以对所述发热层的微观结构进行老化处理。
  5. 如权利要求4所述的雾化芯制备方法，其特征在于，所述通电老化处理步骤中，通电功率为6～8W，通电时间为1～20分钟。
  6. 如权利要求4所述的雾化芯制备方法，其特征在于，所述通电老化处理步骤中，所述雾化芯的通电老化处理过程，在大气氛围下进行。
  7. 如权利要求4所述的雾化芯制备方法，其特征在于，所述通电老化处理步骤中，采用直流稳压电源对所述雾化芯进行供电。
  8. 如权利要求1至7任一项所述的雾化芯制备方法，其特征在于，所述导电材料为镍铬合金材料，所述镍铬合金材料通过所述薄膜沉积工艺沉积形成镍铬合金发热层，所述镍铬合金发热层的沉积厚度为1～5μm。
  9. 如权利要求8所述的雾化芯制备方法，其特征在于，所述镍铬合金材料中Ni/(Ni+Cr)的质量比为0.2～0.9。
  10. 如权利要求1至7任一项所述的雾化芯制备方法，其特征在于，所述多孔陶瓷基底的孔隙率为30％～80％，所述多孔陶瓷基底的孔径为10～30μm。
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