WO2023042813A1 - 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 - Google Patents
半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 Download PDFInfo
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- 239000003480 eluent Substances 0.000 description 1
- 239000012156 elution solvent Substances 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- CLJWSVLSCYWCMP-UHFFFAOYSA-N n,n-diethyl-2-methylpropanamide Chemical compound CCN(CC)C(=O)C(C)C CLJWSVLSCYWCMP-UHFFFAOYSA-N 0.000 description 1
- CDQSTBHGKNNPSY-UHFFFAOYSA-N n,n-diethylbutanamide Chemical compound CCCC(=O)N(CC)CC CDQSTBHGKNNPSY-UHFFFAOYSA-N 0.000 description 1
- YKOQQFDCCBKROY-UHFFFAOYSA-N n,n-diethylpropanamide Chemical compound CCN(CC)C(=O)CC YKOQQFDCCBKROY-UHFFFAOYSA-N 0.000 description 1
- VIJUZNJJLALGNJ-UHFFFAOYSA-N n,n-dimethylbutanamide Chemical compound CCCC(=O)N(C)C VIJUZNJJLALGNJ-UHFFFAOYSA-N 0.000 description 1
- ZJBIJOORRHXJDN-UHFFFAOYSA-N n-ethyl-n,2-dimethylpropanamide Chemical compound CCN(C)C(=O)C(C)C ZJBIJOORRHXJDN-UHFFFAOYSA-N 0.000 description 1
- SSJOFYZNKQFVBK-UHFFFAOYSA-N n-ethyl-n-methylbutanamide Chemical compound CCCC(=O)N(C)CC SSJOFYZNKQFVBK-UHFFFAOYSA-N 0.000 description 1
- GHVUKOCVBVUUGS-UHFFFAOYSA-N n-ethyl-n-methylpropanamide Chemical compound CCN(C)C(=O)CC GHVUKOCVBVUUGS-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
- C09D9/04—Chemical paint or ink removers with surface-active agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Definitions
- the present invention relates to a method for cleaning a semiconductor substrate, a method for manufacturing a processed semiconductor substrate, and a composition for stripping and dissolving.
- Semiconductor wafers which have conventionally been integrated in a two-dimensional planar direction, are required to have a semiconductor integration technology that integrates (stacks) the planar surface in a three-dimensional direction for the purpose of further integration.
- This three-dimensional lamination is a technique of integrating in multiple layers while connecting with a through silicon via (TSV).
- TSV through silicon via
- a semiconductor wafer before thinning (also simply called a wafer here) is bonded to a support for polishing with a polishing machine.
- the adhesion at that time is called temporary adhesion because it must be easily peeled off after polishing.
- This temporary adhesion must be easily removed from the support, and if a large force is applied to the removal, the thinned semiconductor wafer may be cut or deformed. easily removed.
- the back surface of the semiconductor wafer is removed or displaced due to polishing stress. Therefore, the performance required for the temporary adhesion is to withstand the stress during polishing and to be easily removed after polishing.
- Patent Documents 1 and 2 disclose a cleaning agent composition for removing this residue and cleaning the surface of a semiconductor substrate.
- Patent Document 1 discloses a siloxane resin remover containing a polar aprotic solvent and a quaternary ammonium hydroxide
- Patent Document 2 discloses a cured resin remover containing an alkyl ammonium fluoride.
- Patent Documents 1 and 2 are intended to remove the adhesive residue from the substrate surface by dissolving the adhesive residue on the substrate surface. Attempting to remove the adhesive residue from the substrate surface has been found to take a long time.
- the inventors of the present invention have investigated cleaning compositions and found that the use of a composition containing a specific component swells the adhesive layer and allows the adhesive layer to be peeled off from the substrate.
- a composition containing this particular component can be used to remove the adhesive layer from the substrate in a short period of time.
- the present invention has been made in view of the above circumstances, and for example, a semiconductor substrate having an adhesive layer on its surface obtained using a siloxane adhesive can be removed (washed) with a simple operation in a short time and more cleanly. ), methods of manufacturing processed semiconductor substrates comprising such cleaning methods, and compositions used in such cleaning methods.
- the adhesive layer on the semiconductor substrate is formed from a siloxane-based adhesive containing a polyorganosiloxane component (A') that cures particularly by a hydrosilylation reaction.
- A' polyorganosiloxane component
- a method for cleaning a semiconductor substrate comprising a step of peeling and dissolving an adhesive layer on a semiconductor substrate using a composition for peeling and dissolving
- the stripping and dissolving composition comprises [I] component: quaternary ammonium salt,
- a method for cleaning a semiconductor substrate comprising component [II]: an amide solvent, and component [III]: a solvent represented by the following formula (L).
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- the siloxane-based adhesive contains a polyorganosiloxane component (A') that cures through a hydrosilylation reaction.
- the method for cleaning a semiconductor substrate according to any one of [1] to [8], wherein the step of peeling and dissolving includes a step of removing the peeled adhesive layer.
- a first step of manufacturing a laminate comprising a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition
- a second step of processing the semiconductor substrate of the obtained laminate A processed semiconductor comprising: a third step of separating the semiconductor substrate and the adhesive layer from the supporting substrate; and a fourth step of stripping and dissolving to remove the adhesive layer on the semiconductor substrate using a stripping and dissolving composition.
- the stripping and dissolving composition comprises [I] component: quaternary ammonium salt, [II] Component: an amide-based solvent, and [III] Component: A method for producing a processed semiconductor substrate, characterized by containing a solvent represented by the following formula (L).
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- R 0 represents an ethyl group, a propyl group or an isopropyl group
- R A and R B each independently represent an alkyl group having 1 to 4 carbon atoms.
- R 101 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms
- R 102 represents an alkylene group having 1 to 6 carbon atoms or a group represented by the following formula (Y1).
- R 103 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms
- R 104 represents an alkylene group having 1 to 5 carbon atoms
- *1 is a bond that binds to the carbon atom in formula (Y) represents a hand
- *2 represents a bond that binds to the nitrogen atom in formula (Y).
- the adhesive layer is at least one selected from siloxane-based adhesives, acrylic resin-based adhesives, epoxy resin-based adhesives, polyamide-based adhesives, polystyrene-based adhesives, polystyren
- the siloxane-based adhesive contains a polyorganosiloxane component (A') that cures through a hydrosilylation reaction.
- the fourth step of removing by peeling and dissolving includes a step of removing the peeled adhesive layer.
- a stripping and dissolving composition used for stripping and dissolving and removing an adhesive layer on a semiconductor substrate when cleaning the semiconductor substrate comprises [I] component: quaternary ammonium salt, [II] Component: an amide solvent, and [III] Component: A composition for stripping and dissolving, characterized by containing a solvent represented by the following formula (L). (Wherein, L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- composition for peeling and dissolving according to any one of [19] to [23], which is a film obtained using an adhesive composition containing an adhesive component (S) containing [25]
- the siloxane-based adhesive contains a polyorganosiloxane component (A') that cures through a hydrosilylation reaction.
- a method for cleaning a semiconductor substrate that can cleanly remove (clean) a semiconductor substrate having an adhesive layer on its surface with a simple operation in a short time, and includes such a cleaning method.
- Methods of making processed semiconductor substrates and compositions for use in such cleaning methods can be provided.
- a method for cleaning a semiconductor substrate of the present invention includes a step of stripping and dissolving an adhesive layer on a semiconductor substrate using a stripping and dissolving composition.
- the stripping and dissolving composition comprises: [I] component: quaternary ammonium salt, [II] component: amide solvent, and [III] component: solvent represented by the following formula (L).
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- the main material constituting the entire semiconductor substrate is not particularly limited as long as it can be used for this type of application, and examples thereof include silicon, silicon carbide, and compound semiconductors.
- the shape of the semiconductor substrate is not particularly limited, but is, for example, a disc shape. It should be noted that the disk-shaped semiconductor substrate does not need to have a perfect circular shape on its surface. It may have notches.
- the thickness of the disk-shaped semiconductor substrate may be appropriately determined according to the purpose of use of the semiconductor substrate, and is not particularly limited, but is, for example, 500 to 1,000 ⁇ m.
- the diameter of the disk-shaped semiconductor substrate may be appropriately determined according to the purpose of use of the semiconductor substrate, and is not particularly limited.
- the semiconductor substrate is, for example, a wafer.
- Specific examples include, but are not limited to, silicon wafers with a diameter of 300 mm and a thickness of about 770 ⁇ m.
- An adhesive layer on a semiconductor substrate is, for example, a film obtained from an adhesive composition comprising an adhesive component (S).
- an adhesive component (S) is not particularly limited as long as it is used for this type of application. Examples include siloxane adhesives, acrylic resin adhesives, epoxy resin adhesives, polyamide adhesives, polystyrene adhesives, polyimide adhesives, phenolic resin adhesives, and the like.
- the adhesive component (S) is a siloxane-based adhesive because it exhibits a suitable adhesive ability during processing of wafers, etc., can be peeled off after processing, and has excellent heat resistance. is preferred.
- the adhesive composition used in the present invention contains a component (A) that cures by a hydrosilylation reaction as an adhesive component.
- the adhesive composition used in the present invention contains polyorganosiloxane in a preferred embodiment.
- Component (A) may be a component that cures by a hydrosilylation reaction, or may be a polyorganosiloxane component (A') that cures by a hydrosilylation reaction.
- the component (A) comprises, for example, a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom, as an example of the component (A'), and Si- It contains a polyorganosiloxane (a2) having an H group and a platinum group metal-based catalyst (A2).
- the alkenyl group having 2 to 40 carbon atoms may be substituted.
- substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxyl groups, aryl groups, heteroaryl groups and the like.
- the polyorganosiloxane component (A') that cures by a hydrosilylation reaction has siloxane units (Q units) represented by SiO 2 , represented by R 1 R 2 R 3 SiO 1/2 one selected from the group consisting of siloxane units (M units), siloxane units (D units) represented by R 4 R 5 SiO 2/2 and siloxane units (T units) represented by R 6 SiO 3/2
- a polysiloxane (A1) containing two or more units and a platinum group metal catalyst (A2) wherein the polysiloxane (A1) is a siloxane unit (Q' unit) represented by SiO 2 , R 1 A siloxane unit represented by 'R 2 'R 3 'SiO 1/2 (M' unit), a siloxane unit represented by R 4 'R 5 'SiO 2/2 (D' unit) and R 6 'SiO 3 / 2 containing one or more units selected from the group consisting of siloxane units
- R 1 to R 6 are groups or atoms bonded to a silicon atom and each independently represent an optionally substituted alkyl group, an optionally substituted alkenyl group or a hydrogen atom.
- substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxyl groups, aryl groups, heteroaryl groups and the like.
- R 1 ' to R 6 ' are groups bonded to a silicon atom and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group, and R 1 ' to R 6 At least one of ' is an optionally substituted alkenyl group.
- substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxyl groups, aryl groups, heteroaryl groups and the like.
- R 1 ′′ to R 6 ′′ are groups or atoms bonded to a silicon atom and each independently represent an optionally substituted alkyl group or hydrogen atom, but at least one of R 1 ′′ to R 6 ′′ One is a hydrogen atom.
- substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxyl groups, aryl groups, heteroaryl groups and the like.
- the alkyl group may be linear, branched or cyclic, but is preferably a linear or branched alkyl group. Yes, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.
- optionally substituted linear or branched alkyl groups include methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl and s-butyl. group, tertiary butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n -pentyl group, 3-methyl-n-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl- n-
- optionally substituted cyclic alkyl groups include a cyclopropyl group, a cyclobutyl group, a 1-methyl-cyclopropyl group, a 2-methyl-cyclopropyl group, a cyclopentyl group, a 1-methyl-cyclobutyl group, a 2- methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group , 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3-dimethyl-cycl
- the alkenyl group may be linear or branched, and the number of carbon atoms thereof is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and more preferably 20 or less. It is preferably 10 or less.
- optionally substituted linear or branched alkenyl groups include, but are not limited to, vinyl groups, allyl groups, butenyl groups, pentenyl groups, and the like. 2 to 14, preferably 2 to 10, more preferably 1 to 6. Among them, an ethenyl group and a 2-propenyl group are particularly preferred.
- Specific examples of the optionally substituted cyclic alkenyl group include, but are not limited to, cyclopentenyl, cyclohexenyl and the like, and the number of carbon atoms thereof is usually 4 to 14, preferably 5 to 10, More preferably 5-6.
- polysiloxane (A1) includes polyorganosiloxane (a1') and polyorganosiloxane (a2'), but the alkenyl group contained in polyorganosiloxane (a1') and polyorganosiloxane (a2' ) and the hydrogen atoms (Si—H groups) contained in ) form a crosslinked structure through a hydrosilylation reaction by the platinum group metal-based catalyst (A2) and are cured. As a result, a cured film is formed.
- Polyorganosiloxane (a1') contains one or more units selected from the group consisting of Q' units, M' units, D' units and T' units, and M' units, D' units and It contains at least one selected from the group consisting of T' units.
- the polyorganosiloxane (a1') two or more polyorganosiloxanes satisfying such conditions may be used in combination.
- Q' units, M' units, D' units and T' units include (Q' unit and M' unit), (D' unit and M' unit), (T' units and M' units), (Q' units and T' units and M' units), but are not limited to these.
- Polyorganosiloxane (a2′) contains one or more units selected from the group consisting of Q′′ units, M′′ units, D′′ units and T′′ units, and M′′ units, D′′ units and It contains at least one selected from the group consisting of T′′ units.
- the polyorganosiloxane (a2′) two or more polyorganosiloxanes satisfying these conditions may be used in combination.
- Preferred combinations of two or more selected from the group consisting of Q′′ units, M′′ units, D′′ units and T′′ units include (M′′ units and D′′ units), (Q′′ units and M′′ units), (Q" units and T" units and M” units).
- Polyorganosiloxane (a1') is composed of siloxane units in which alkyl groups and/or alkenyl groups are bonded to silicon atoms thereof .
- the proportion of alkenyl groups is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, and the remaining R 1 ' to R 6 ' can be alkyl groups. .
- Polyorganosiloxane (a2') is composed of siloxane units in which alkyl groups and/or hydrogen atoms are bonded to silicon atoms thereof, and all substituents represented by R 1 ′′ to R 6 ′′ and The ratio of hydrogen atoms in the substituted atoms is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, and the remaining R 1 ′′ to R 6 ′′ are alkyl groups and can do.
- component (A) contains (a1) and (a2)
- the alkenyl group contained in polyorganosiloxane (a1) and the Si—H bond contained in polyorganosiloxane (a2) is in the range of 1.0:0.5 to 1.0:0.66.
- the weight-average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but each is usually 500 to 1,000,000, and the effects of the present invention are realized with good reproducibility. From the viewpoint of doing, it is preferably 5,000 to 50,000.
- the weight-average molecular weight, number-average molecular weight and degree of dispersion of the polyorganosiloxane are determined by, for example, a GPC apparatus (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N manufactured by Tosoh Corporation).
- the viscosities of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are not particularly limited, but each is usually 10 to 1,000,000 (mPa s), and from the viewpoint of achieving the effects of the present invention with good reproducibility, it is preferable. is 50 to 20000 (mPa ⁇ s).
- the viscosities of polyorganosiloxane (a1) and polyorganosiloxane (a2) are values measured at 25° C. with an E-type rotational viscometer.
- Polyorganosiloxane (a1) and polyorganosiloxane (a2) react with each other to form a film through a hydrosilylation reaction. Therefore, the curing mechanism differs from that via, for example, silanol groups, and therefore any siloxane need not contain silanol groups or functional groups that form silanol groups upon hydrolysis, such as alkyloxy groups. None.
- the adhesive composition contains a platinum group metal-based catalyst (A2) along with the polyorganosiloxane component (A').
- a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl groups of the polyorganosiloxane (a1) and the Si—H groups of the polyorganosiloxane (a2).
- platinum-based metal catalysts include platinum black, platinum chloride, chloroplatinic acid, reactants of chloroplatinic acid and monohydric alcohols, complexes of chloroplatinic acid and olefins, platinum bisacetoacetate, and the like.
- platinum-based catalysts including, but not limited to: Examples of complexes of platinum and olefins include, but are not limited to, complexes of divinyltetramethyldisiloxane and platinum.
- the amount of platinum group metal-based catalyst (A2) is not particularly limited, but is usually in the range of 1.0 to 50.0 ppm with respect to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2). .
- the polyorganosiloxane component (A') may contain a polymerization inhibitor (A3) for the purpose of suppressing the progress of the hydrosilylation reaction.
- the polymerization inhibitor is not particularly limited as long as it can suppress the progress of the hydrosilylation reaction, and specific examples thereof include 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propion-1-ol.
- the amount of the polymerization inhibitor is not particularly limited, it is usually 1000.0 ppm or more with respect to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) from the viewpoint of obtaining the effect, and the hydrosilylation reaction It is 10000.0 ppm or less from the viewpoint of preventing excessive suppression of.
- the adhesive composition used in the present invention may contain a release agent component (B).
- a release agent component (B) is typically polyorganosiloxane.
- specific examples thereof include, but are not limited to, epoxy group-containing polyorganosiloxane, methyl group-containing polyorganosiloxane, phenyl group-containing polyorganosiloxane, and the like.
- the release agent component (B) includes polydimethylsiloxane, which may be modified.
- polydimethylsiloxane examples include, but are not limited to, epoxy group-containing polydimethylsiloxane, unmodified polydimethylsiloxane, and phenyl group-containing polydimethylsiloxane.
- the weight-average molecular weight of the polyorganosiloxane that is the release agent component (B) is not particularly limited, it is usually from 100,000 to 2,000,000. 200,000 to 1,200,000, more preferably 300,000 to 900,000. Further, the degree of dispersion is not particularly limited, but is usually 1.0 to 10.0, preferably 1.5 to 5.0, more preferably 2, from the viewpoint of realizing suitable peeling with good reproducibility. 0 to 3.0.
- the weight average molecular weight and the degree of dispersion can be measured by the methods described above for polysiloxane.
- the complex viscosity of polyorganosiloxane, which is the release agent component (B) can be measured at 25° C. using a rheometer (for example, rheometer MCR-302 manufactured by Anton Paar KK).
- epoxy group-containing polyorganosiloxanes examples include those containing siloxane units ( D10 units) represented by R 11 R 12 SiO 2/2 .
- R 11 is a group bonded to a silicon atom and represents an alkyl group
- R 12 is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group
- specific examples of the alkyl group are , the aforementioned examples can be mentioned.
- the epoxy group in the organic group containing an epoxy group may be an independent epoxy group without being condensed with other rings, and forms a condensed ring with other rings such as a 1,2-epoxycyclohexyl group. may be an epoxy group.
- Specific examples of organic groups containing epoxy groups include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl.
- a preferable example of the epoxy group-containing polyorganosiloxane is epoxy group-containing polydimethylsiloxane, but the present invention is not limited thereto.
- the epoxy group-containing polyorganosiloxane contains the aforementioned siloxane units ( D10 units), but may contain Q units, M units and/or T units in addition to the D10 units.
- specific examples of the epoxy group-containing polyorganosiloxane include a polyorganosiloxane consisting only of D10 units, a polyorganosiloxane containing D10 units and Q units, and a polyorganosiloxane containing D10 units and M units.
- Polyorganosiloxane containing D10 units and T units Polyorganosiloxane containing D10 units, Q units and M units Polyorganosiloxane containing D10 units, M units and T units , polyorganosiloxanes containing D 10 units, Q units, M units and T units.
- Epoxy group-containing polyorganosiloxane is preferably epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5.
- the weight average molecular weight is not particularly limited, it is usually 1,500 to 500,000, and preferably 100,000 or less from the viewpoint of suppressing deposition in the adhesive.
- epoxy group-containing polyorganosiloxanes include those represented by formulas (E1) to (E3), but are not limited to these.
- methyl group-containing polyorganosiloxane for example, one containing a siloxane unit ( D200 unit ) represented by R210R220SiO2 /2 , preferably a siloxane unit represented by R21R21SiO2 /2 (D 20 units).
- R 210 and R 220 are groups bonded to a silicon atom, each independently representing an alkyl group, at least one of which is a methyl group, and specific examples of the alkyl group are the above-mentioned examples.
- R 21 is a group bonded to a silicon atom and represents an alkyl group, and specific examples of the alkyl group include those mentioned above. Among them, R 21 is preferably a methyl group.
- a preferred example of the methyl group-containing polyorganosiloxane is polydimethylsiloxane, but the present invention is not limited thereto.
- Methyl group-containing polyorganosiloxane contains the above-mentioned siloxane units (D 200 units or D 20 units), but in addition to D 200 units and D 20 units, it may contain Q units, M units and / or T units. .
- methyl group-containing polyorganosiloxane examples include a polyorganosiloxane consisting only of D 200 units, a polyorganosiloxane containing D 200 units and Q units, and a polyorganosiloxane containing D 200 units and M units.
- polyorganosiloxane containing D 200 units and T units polyorganosiloxane containing D 200 units, Q units and M units
- polyorganosiloxane containing D 200 units, M units and T units D 200 units, Q units, M units and T units.
- methyl group-containing polyorganosiloxane examples include a polyorganosiloxane consisting only of D20 units, a polyorganosiloxane containing D20 units and Q units, and a polyorganosiloxane containing D20 units and M units.
- polyorganosiloxane containing D20 units and T units polyorganosiloxane containing D20 units Q units and M units polyorganosiloxane containing D20 units M units T units , D 20 units, Q units, M units and T units.
- methyl group-containing polyorganosiloxane examples include, but are not limited to, those represented by the formula (M1).
- n4 indicates the number of repeating units and is a positive integer.
- phenyl group-containing polyorganosiloxanes examples include those containing siloxane units represented by R 31 R 32 SiO 2/2 (D 30 units).
- R 31 is a group bonded to a silicon atom and represents a phenyl group or an alkyl group
- R 32 is a group bonded to a silicon atom and represents a phenyl group; can be mentioned, but a methyl group is preferred.
- the phenyl group-containing polyorganosiloxane contains the aforementioned siloxane units ( D30 units), but may contain Q units, M units and/or T units in addition to the D30 units.
- phenyl group-containing polyorganosiloxane examples include a polyorganosiloxane consisting only of D30 units, a polyorganosiloxane containing D30 units and Q units, and a polyorganosiloxane containing D30 units and M units.
- polyorganosiloxane containing D 30 units and T units polyorganosiloxane containing D 30 units Q units and M units polyorganosiloxane containing D 30 units M units T units , D 30 units, Q units, M units and T units.
- phenyl group-containing polyorganosiloxane examples include, but are not limited to, those represented by formula (P1) or (P2).
- Polyorganosiloxane which is the release agent component (B), may be a commercially available product or a synthesized product.
- Commercially available products of polyorganosiloxane include, for example, WACKERSILICONE FLUID AK series (AK50, AK 350, AK 1000, AK 10000, AK 1000000) manufactured by Wacker Chemi Co., Ltd., GENIOPLAST GUM, and dimethyl silicone manufactured by Shin-Etsu Chemical Co., Ltd.
- phenyl group-containing polyorganosiloxane (PMM-1043, PMM-1025, PDM-0421, PDM-0821), Shin-Etsu Chemical Co., Ltd.
- phenyl group-containing polyorganosiloxane Examples include siloxane (KF50-3000CS), phenyl group-containing polyorganosiloxane (TSF431, TSF433) manufactured by Momentive, but not limited thereto.
- the adhesive composition used in the present invention contains a curing component (A) and a release agent component (B), and in a more preferred embodiment, the release agent component (B) contains polyorganosiloxane.
- An example of the adhesive composition used in the present invention can contain the curable component (A) and the release agent component (B) in any ratio.
- the ratio of the component (A) to the release agent component (B) is the mass ratio [(A):(B)], preferably 99.995:0.005 to 30:70, more preferably 99.9 : 0.1 to 75:25. That is, when a polyorganosiloxane component (A') that cures by a hydrosilylation reaction is included, the ratio of the component (A') and the release agent component (B) is the mass ratio [(A'):(B)] and preferably 99.995:0.005 to 30:70, more preferably 99.9:0.1 to 75:25.
- the adhesive composition used in the present invention may contain a solvent for the purpose of adjusting the viscosity, etc.
- a solvent for the purpose of adjusting the viscosity etc.
- Specific examples thereof include aliphatic hydrocarbons, aromatic hydrocarbons, ketones, etc., but these is not limited to
- the solvent includes hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, and diisobutyl.
- examples include, but are not limited to, ketones, 2-octanone, 2-nonanone, 5-nonanone, and the like. Such solvents can be used singly or in combination of two or more.
- the content thereof is appropriately set in consideration of the viscosity of the desired composition, the coating method to be employed, the thickness of the thin film to be produced, etc. It is in the range of about 10 to 90% by mass with respect to the entire composition.
- the viscosity of the adhesive composition used in the present invention is not particularly limited, it is usually 500 to 20,000 mPa ⁇ s, preferably 1,000 to 5,000 mPa ⁇ s at 25°C.
- the viscosity of the adhesive composition used in the present invention can be adjusted by changing the types of solvents used, their ratios, the concentration of film constituents, etc., in consideration of various factors such as the coating method used and the desired film thickness. is.
- the film-constituting component means a component other than the solvent contained in the composition.
- An example of the adhesive composition used in the present invention can be produced by mixing component (A), release agent component (B), and, if used, a solvent.
- the mixing order is not particularly limited, but as an example of a method for easily and reproducibly producing a release adhesive composition, component (A) and release agent component (B) are mixed in a solvent. Examples include, but are not limited to, a method of dissolving, and a method of dissolving part of component (A) and release agent component (B) in a solvent, dissolving the remainder in a solvent, and mixing the resulting solutions.
- it may be appropriately heated within a range in which the components are not decomposed or deteriorated.
- the solvent, solution, etc. used may be filtered using a filter or the like during the production of the adhesive composition or after all the components have been mixed.
- the thickness of the adhesive layer is not particularly limited, it is preferably 10 to 100 ⁇ m, more preferably 20 to 50 ⁇ m, from the viewpoint of obtaining a good peeling effect with good reproducibility.
- a stripping and dissolving composition is a composition used in a method of cleaning a semiconductor substrate to remove an adhesive layer from the semiconductor substrate.
- the stripping and dissolving composition contains a component to swell the adhesive layer and release the adhesive layer from the semiconductor substrate and a component to dissolve the adhesive layer.
- the stripping and dissolving composition comprises: [I] component: quaternary ammonium salt, [II] component: amide solvent, and [III] component: solvent represented by the following formula (L).
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L and is an integer of 0 to 5.
- the quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it can be used for this type of application.
- a quaternary ammonium salt is effective as a component for dissolving the adhesive layer.
- Such quaternary ammonium cations typically include tetra(hydrocarbon)ammonium cations.
- hydroxide ions OH ⁇
- halogen ions such as fluorine ions (F ⁇ ), chloride ions (Cl ⁇ ), bromide ions (Br ⁇ ), iodine ions (I ⁇ ), etc.
- tetrafluoroborate ion BF 4 ⁇
- PF 6 ⁇ hexafluorophosphate ion
- the quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, more preferably a fluorine-containing quaternary ammonium salt.
- the halogen atom may be contained in the cation or the anion, preferably the anion.
- the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride.
- the hydrocarbon group in the tetra(hydrocarbon)ammonium fluoride include an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and an alkynyl group having 6 to 20 carbon atoms. and the like.
- the tetra(hydrocarbon)ammonium fluoride comprises a tetraalkylammonium fluoride.
- tetraalkylammonium fluoride examples include tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride (also referred to as tetrabutylammonium fluoride) and the like. Not limited. Among them, tetrabutylammonium fluoride is preferred.
- Quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used as hydrates.
- quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used singly or in combination of two or more.
- the amount of the quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the stripping and dissolving composition. % by mass.
- the amide-based solvent dissolves the quaternary ammonium salt well and is effective as a component for obtaining a stripping and dissolving composition with excellent uniformity.
- the amide-based solvent is preferably an N-substituted amide compound having 4 or more carbon atoms and having no active hydrogen on the nitrogen atom.
- a suitable example of the amide-based solvent is an acid amide derivative represented by the following formula (Z).
- R 0 represents an ethyl group, a propyl group or an isopropyl group, preferably an ethyl group or an isopropyl group, more preferably an ethyl group.
- R A and R B each independently represent an alkyl group having 1 to 4 carbon atoms. Alkyl groups having 1 to 4 carbon atoms may be linear, branched, or cyclic, and are specifically methyl, ethyl, propyl, isopropyl, cyclopropyl, n-butyl, and isobutyl groups. , s-butyl group, t-butyl group, cyclobutyl group and the like. Among these, RA and RB are preferably a methyl group or an ethyl group, more preferably a methyl group or an ethyl group, and still more preferably a methyl group.
- Examples of acid amide derivatives represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyric acid amide, N, N-diethylbutyric acid amide, N-ethyl-N-methylbutyric acid amide, N,N-dimethylisobutyric acid amide, N,N-diethylisobutyric acid amide, N-ethyl-N-methylisobutyric acid amide and the like.
- N,N-dimethylpropionamide and N,N-dimethylisobutyramide are particularly preferred, and N,N-dimethylpropionamide is more preferred.
- the acid amide derivative represented by formula (Z) may be synthesized by a substitution reaction between a corresponding carboxylic acid ester and an amine, or a commercially available product may be used.
- a preferable amide-based solvent is a compound represented by formula (Y) including a lactam compound and the like.
- R 101 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms
- R 102 represents an alkylene group having 1 to 6 carbon atoms or a group represented by the following formula (Y1).
- alkyl group having 1 to 6 carbon atoms for R 102 include methyl group, ethyl group, n-propyl group, n-butyl group, etc.
- alkylene group having 1 to 6 carbon atoms are , methylene group, ethylene group, trimethylene group, tetramethylene group, pentamethylene group, hexamethylene group and the like, but are not limited thereto.
- R 103 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms
- R 104 represents an alkylene group having 1 to 5 carbon atoms
- *1 is a carbon atom in formula (Y).
- *2 represents a bond that bonds to the nitrogen atom in formula (Y).
- lactam compound represented by formula (Y) examples include ⁇ -lactam compound, ⁇ -lactam compound, ⁇ -lactam compound, ⁇ -lactam compound and the like. More than one species can be used in combination.
- the lactam compound represented by formula (Y) includes 1-alkyl-2-pyrrolidone (N-alkyl- ⁇ -butyrolactam), and in a more preferred embodiment, N-methylpyrrolidone (NMP ) or N-ethylpyrrolidone (NEP), and in an even more preferred embodiment, N-methylpyrrolidone (NMP).
- NMP N-methylpyrrolidone
- NMP N-methylpyrrolidone
- a preferred embodiment of the compound represented by formula (Y) also includes, for example, 1,3-dimethyl-2-imidazolidinone.
- the content of the amide-based solvent in the stripping and dissolving composition can be 70% by mass or less when the aprotic solvent is taken as 100% by mass in the stripping and dissolving composition.
- the content of the amide solvent is preferably 10 to 55% by mass, more preferably 20 to 55% by mass, still more preferably 20 to 45% by mass, when the aprotic solvent is 100% by mass. ⁇ 40% by weight is particularly preferred.
- the content of the solvent to be mixed is defined by the ratio when the aprotic solvent, which is a solvent having no hydroxyl group (--OH), is taken as 100% by mass. Accordingly, protic solvents such as water, methanol, 1-methoxy-2-propanol, etc. are not included in the criteria for content.
- the aprotic solvent in the present invention means, for example, N,N-dimethylpropionamide, mesitylene, etc., and the mixing ratio can be determined based on the total amount of these.
- L represents a substituent substituted on the benzene ring, each independently represents an alkyl group having 1 to 4 carbon atoms, k represents the number of L, an integer of 0 to 5 is.
- the alkyl group may be linear, branched, or cyclic, but is preferably a linear or branched alkyl group.
- linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group and t-butyl group. etc., but not limited to these.
- cyclic alkyl group examples include, but are not limited to, a cyclopropyl group, a cyclobutyl group, a 1-methyl-cyclopropyl group, a 2-methyl-cyclopropyl group, and the like.
- L is preferably a methyl group or an isopropyl group from the viewpoint of realizing the peeling of the adhesive layer in a short time with good reproducibility, the viewpoint of easy availability of the compound, and the like.
- k is preferably 4 or less, more preferably 3 or less, and even more preferably 2 or less, from the viewpoint of achieving reproducible peeling of the adhesive layer in a shorter time, from the viewpoint of easy availability of the compound, and the like.
- Preferable examples of the organic solvent represented by the formula (L) include toluene, mesitylene, and p-cymene, from the standpoint of achieving reproducible peeling of the adhesive layer in a shorter time and from the standpoint of easy availability of the compound. , 1,2,4-trimethylbenzene and the like.
- the content of the solvent represented by formula (L) in the stripping and dissolving composition is 30 to 90% by mass when the aprotic solvent is 100% by mass in the stripping and dissolving composition. Preferably, 40 to 80% by mass is more preferable.
- the adhesive layer on the semiconductor substrate is continuously contacted with the stripping and dissolving composition.
- swelling and peeling of the adhesive layer and dissolution of the adhesive layer are performed together.
- Swelling, peeling, and dissolution of the adhesive layer are performed together in a cleaning operation using one cleaning composition, so that the adhesive layer can be removed from the semiconductor substrate more cleanly and in a shorter time with a simple cleaning operation. It can be removed (washed).
- removing (cleaning) refers to removing the adhesive layer from the semiconductor substrate. Even when the adhesive layer swells and is peeled off from the semiconductor substrate, the adhesive layer dissolves into the solution and dissolves into the semiconductor.
- Removing (cleaning) also includes the case where it disappears from the substrate.
- the method of continuously contacting the adhesive layer on the semiconductor substrate with the stripping and dissolving composition is particularly limited as long as the adhesive layer on the semiconductor substrate is in continuous contact with the stripping and dissolving composition over time.
- this temporal continuity includes not only the case where the adhesive layer is always in contact with the peeling and dissolving composition, but also, for example, after the adhesive layer is contacted with an organic solvent for a certain period of time, the contact is paused once and the contact is made again or repeated, and not only when the entire adhesive layer on the semiconductor substrate is in contact with the peeling and dissolving composition, but also when one part of the adhesive layer
- the adhesive layer on the semiconductor substrate should always be in contact with the stripping and dissolving composition.
- a preferred embodiment is one in which the entire adhesive layer on the semiconductor substrate is in contact with the peeling and dissolving composition.
- the adhesive layer on the semiconductor substrate is swollen and dissolved by immersing the adhesive layer in a release and dissolution composition to remove from or adhere to the semiconductor substrate.
- the layer is swollen and dissolved by continuously applying a stripping and dissolving composition over the adhesive layer and removed from the semiconductor substrate.
- the semiconductor substrate with the adhesive layer attached may be immersed in the peeling and dissolving composition.
- the immersion time is the time until the adhesive layer swells and dissolves and the adhesive layer peels off from the semiconductor substrate, and is not particularly limited. Seconds or more, and in terms of process throughput, five minutes or less.
- the adhesive layer on the semiconductor substrate is immersed in the stripping and dissolving composition
- the semiconductor substrate with the adhesive layer is moved in the stripping and dissolving composition
- the stripping and dissolving composition is caused to convect, and the stripping is performed by ultrasonic waves.
- the dissolution composition may be vibrated to facilitate removal (washing) of the adhesive layer.
- an oscillating washing machine for example, an oscillating washing machine, a paddle-type washing machine, or the like may be used.
- the adhesive layer on the semiconductor substrate is subjected to relative convection, or the convection generated by the movement or rotation is transferred to the adhesive layer on the semiconductor substrate. This promotes not only swelling and dissolution of the adhesive layer on the semiconductor substrate, but also peeling and dissolution of the adhesive layer from the semiconductor substrate.
- the semiconductor substrate with the adhesive layer attached is fixed to a stage or the like.
- a convection washer capable of achieving a state in which the surrounding stripping and dissolving composition is convected by a stirrer.
- an ultrasonic cleaning machine or an ultrasonic probe may be used, and the conditions are usually 20 kHz to 5 MHz.
- the peeling and dissolving composition should be continuously applied toward the adhesive layer on the semiconductor substrate.
- a rod-like or misty A stripping and dissolving composition in the form of, preferably a bar, is dispensed onto the adhesive layer on the semiconductor substrate in a continuous manner over time.
- the temporal continuity in this case also applies not only when the stripping and dissolving composition is constantly supplied onto the adhesive layer on the semiconductor substrate, but also, for example, after supplying the stripping and dissolving composition for a certain period of time. , The supply is once stopped, and the supply is resumed or repeated. From the viewpoint of realizing more effective cleaning with good reproducibility, the stripping and dissolving composition is used on the semiconductor substrate. It is preferably always supplied on top of the adhesive layer.
- the flow rate is usually 200 to 500 mL/min.
- the adhesive layer on the semiconductor substrate is treated with vapor of the stripping and dissolving composition, for example using a steam washer, to achieve constant contact with the stripping and dissolving composition. may be brought into contact.
- the swelling, peeling, and dissolution of the adhesive layer are carried out at the same time, so that the semiconductor substrate can be removed from the semiconductor substrate cleanly in a short time with a simple cleaning operation.
- the adhesive layer can be removed (washed).
- the use of the semiconductor cleaning method of the present invention can prevent the dicing tape from being damaged in the cleaning process. For example, after a semiconductor wafer is polished and thinned, the semiconductor wafer after thinning is mounted on a dicing tape, and then the semiconductor wafer and the support are separated (separated).
- the adhesive layer remaining on the semiconductor wafer is removed from the semiconductor wafer and washed with a cleaning composition.
- a cleaning composition of a type that dissolves and removes the adhesive residue such as the cleaning compositions of Patent Documents 1 and 2
- the surface of the dicing tape changes.
- the dicing tape is damaged (see the results of [Comparative Example 2-1] described in the Examples section below).
- a semiconductor substrate with an adhesive layer is washed with the composition for peeling and dissolving of the present invention, most of the adhesive layer can be peeled off in a short time, and even a small amount of the adhesive layer remaining after peeling can be used for peeling and dissolution.
- the peeling and dissolving composition of the present invention contains not only a component for dissolving the adhesive layer but also a component for swelling and peeling the adhesive layer. It is considered that the soluble component in the , that is, the proportion of the [I] component (quaternary ammonium salt) can be small, which also effectively contributes to preventing the dicing tape from being damaged.
- the adhesive layer is removed using the peeling and dissolving composition of the present invention, damage to the dicing tape can be effectively prevented (see [Example 3-1] described in the Examples section below). see results).
- the semiconductor substrate cleaning method of the present invention may include a step of removing the peeled adhesive layer.
- the method for removing the peeled adhesive layer is not particularly limited as long as the peeled adhesive layer is removed from the semiconductor substrate. may remove the stripped adhesive layer present in the stripping and dissolving composition without removing the semiconductor substrate from the stripping and dissolving composition.
- the semiconductor substrate may be removed from the stripping and dissolving composition, and the stripped adhesive layer may be removed by pulling the semiconductor substrate away from the stripped adhesive layer.
- the stripped adhesive layer may remain naturally in the stripping and dissolving composition and most of it can be removed in some cases.
- the method for removing the peeled adhesive layer include, for example, removing the peeled adhesive layer by adsorption or suction using a device, removing the peeled adhesive layer by blowing off with gas such as an air gun, and removing the semiconductor substrate vertically or vertically. Examples include, but are not limited to, removing the adhesive layer that has been peeled off by centrifugal force or the like by moving it left or right or rotating it.
- a stripping and dissolving composition used in the method of cleaning a semiconductor substrate of the present invention is also an object of the present invention.
- the stripping and dissolving composition of the present invention is used for removing (cleaning) an adhesive layer on a semiconductor substrate, and preferred embodiments and conditions are as described above.
- the stripping and dissolving composition of the present invention can be produced by mixing the solvents constituting the composition in any order, if necessary. At that time, filtration or the like may be carried out if necessary.
- a processed semiconductor substrate having a clean surface without the remaining adhesive layer can be manufactured.
- Examples of the use of the method for cleaning a semiconductor substrate of the present invention in a semiconductor process include use in a method for manufacturing a processed semiconductor substrate such as thinned used in semiconductor package technology such as TSV.
- Semiconductor substrates to be cleaned by the cleaning method of the present invention include silicon semiconductor substrates such as the silicon wafers described above, as well as germanium substrates, gallium-arsenide substrates, gallium-phosphorus substrates, gallium-arsenide-aluminum substrates, and aluminum plating. Silicon substrates, copper-plated silicon substrates, silver-plated silicon substrates, gold-plated silicon substrates, titanium-plated silicon substrates, silicon nitride film-formed silicon substrates, silicon oxide film-formed silicon substrates, polyimide film-formed silicon substrates, glass substrates, quartz substrates, liquid crystal substrates , various substrates such as an organic EL substrate.
- silicon semiconductor substrates such as the silicon wafers described above, as well as germanium substrates, gallium-arsenide substrates, gallium-phosphorus substrates, gallium-arsenide-aluminum substrates, and aluminum plating. Silicon substrates, copper-plated silicon substrates, silver-plated silicon substrates, gold-plated silicon substrates,
- 1st step a step of producing a laminate comprising a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition
- Second step a step of processing the semiconductor substrate of the obtained laminate
- 3rd step separating the semiconductor substrate and the adhesive layer from the supporting substrate
- a method of manufacturing a processed semiconductor substrate is included.
- the stripping and dissolving composition is as described in the section ⁇ Stripping and dissolving composition> above.
- the semiconductor substrate cleaning method of the present invention is used. Each step will be described in detail below.
- ⁇ First step> As the adhesive composition used for forming the adhesive layer in the first step, various adhesives described above can be used. It is effective for removing layers and more effective for removing adhesive layers obtained from polysiloxane-based adhesives containing component (A) that cures by a hydrosilylation reaction. Therefore, hereinafter, an example of removing the adhesive layer by the cleaning method of the present invention when manufacturing a semiconductor substrate processed using an adhesive layer obtained using a polysiloxane adhesive (adhesive composition) will be described. However, the invention is not so limited.
- a first step of manufacturing a laminate comprising a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition will be described below.
- the first step includes a step of applying an adhesive composition to the surface of a semiconductor substrate or a supporting substrate to form an adhesive coating layer, and a step of bonding the semiconductor substrate and the supporting substrate via the adhesive coating layer. a step of applying a load in the thickness direction of the semiconductor substrate and the support substrate to bring them into close contact with each other while performing at least one of heat treatment and pressure reduction treatment, and then performing a post-heating treatment to form a laminate. including.
- the first step includes, for example, applying an adhesive composition to the circuit surface of a wafer of a semiconductor substrate and heating it to form an adhesive coating layer; a step of applying a release agent composition and heating it to form a release agent coating layer; , applying a load in the thickness direction of the semiconductor substrate and the supporting substrate to bring them into close contact with each other, and then performing a post-heating treatment to form a laminate.
- the adhesive composition was applied to the semiconductor substrate, and the release agent composition was applied to the support substrate, respectively, and heated. you can go In each of the above embodiments, whether the treatment conditions of heat treatment, reduced pressure treatment, or combination of both are adopted depends on the type of adhesive composition, the specific composition of the release agent composition, and the compatibility of films obtained from both compositions. , film thickness, desired adhesive strength, and other factors.
- the semiconductor substrate is the wafer
- the support substrate is the support.
- the object to which the adhesive composition is applied may be either or both of the semiconductor substrate and the support substrate.
- wafers examples include, but are not limited to, silicon wafers and glass wafers having a diameter of about 300 mm and a thickness of about 770 ⁇ m.
- the semiconductor substrate cleaning method of the present invention can effectively clean a semiconductor substrate having bumps.
- bumped semiconductor substrates include silicon wafers having bumps such as ball bumps, printed bumps, stud bumps, and plated bumps. , bump pitch of 1 to 500 ⁇ m.
- plated bumps include, but are not limited to, SnAg bumps, SnBi bumps, Sn bumps, AuSn bumps, and other Sn-based alloy plating.
- the support (carrier) is not particularly limited, but may be, for example, a silicon wafer with a diameter of 300 mm and a thickness of about 700 ⁇ m, but is not limited to this.
- the release agent composition includes a composition containing a release agent component used for this type of application.
- the coating method is not particularly limited, but is usually spin coating. Note that a method of separately forming a coating film by a spin coating method or the like and attaching a sheet-like coating film may be employed, and this is also referred to as coating or coating film.
- the heating temperature of the applied adhesive composition cannot be categorically defined because it varies depending on the type and amount of the adhesive component contained in the adhesive composition, whether or not a solvent is contained, and the desired thickness of the adhesive layer.
- the temperature is usually 80 to 150° C.
- the heating time is usually 30 seconds to 5 minutes.
- the heating temperature of the applied release agent composition varies depending on the type and amount of the cross-linking agent, acid generator, acid, etc., whether or not a solvent is included, the desired thickness of the release layer, etc., and cannot be defined unconditionally.
- the temperature is 120° C. or higher, and from the viewpoint of preventing excessive curing, the temperature is preferably 260° C. or lower, and the heating time is usually 1 to 10 minutes. Heating can be performed using a hot plate, an oven, or the like.
- the film thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it is usually 5 to 500 ⁇ m.
- the film thickness of the release agent coating layer obtained by applying the release agent composition and heating it is usually 5 to 500 ⁇ m.
- the heat treatment is usually carried out at a temperature of 20 to 150° C. in consideration of the viewpoint of softening the adhesive coating layer to realize suitable bonding with the release agent coating layer, the viewpoint of realizing suitable curing of the release agent coating layer, and the like. is determined as appropriate from the range of In particular, from the viewpoint of suppressing or avoiding excessive curing or unnecessary deterioration of the adhesive component or release agent component, the temperature is preferably 130° C. or less, more preferably 90° C. or less, and the heating time is determined by the adhesive ability and peelability. is usually 30 seconds or longer, preferably 1 minute or longer, from the viewpoint of reliably expressing the above, but from the viewpoint of suppressing deterioration of the adhesive layer and other members, it is usually 10 minutes or shorter, preferably 5 minutes or shorter.
- the semiconductor substrate, the adhesive coating layer and the support substrate, or the semiconductor substrate, the adhesive coating layer, the release agent coating layer and the support substrate may be exposed to an atmospheric pressure of 10 to 10,000 Pa.
- the time for decompression treatment is usually 1 to 30 minutes.
- the substrate and the coating layer or the coating layers are bonded together preferably by reduced pressure treatment, more preferably by combined use of heat treatment and reduced pressure treatment.
- the load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate and the support substrate and the layers therebetween and is a load capable of firmly adhering them. It is in the range of 10-1000N.
- the post-heating temperature is preferably 120° C. or higher from the viewpoint of obtaining a sufficient curing rate, and preferably 260° C. or lower from the viewpoint of preventing deterioration of the substrate, adhesive component, release agent component, and the like.
- the heating time is usually 1 minute or more from the viewpoint of achieving suitable bonding of the wafers by curing, and is preferably 5 minutes or more from the viewpoint of stabilizing the physical properties of the adhesive. From the viewpoint of avoiding adverse effects on the body, the time is usually 180 minutes or less, preferably 120 minutes or less. Heating can be performed using a hot plate, an oven, or the like.
- One purpose of the post-heat treatment is to cure the adhesive component (S) more favorably.
- ⁇ Second step> Next, the second step of processing the semiconductor substrate of the laminate obtained by the method described above will be described.
- An example of the processing applied to the laminate used in the present invention includes processing of the back surface of the front surface of the semiconductor substrate opposite to the circuit surface, typically thinning the wafer by polishing the back surface of the wafer. be done. Using such a thinned wafer, through-silicon vias (TSVs) and the like are formed, and then the thinned wafer is separated from the support to form a wafer stack, which is three-dimensionally mounted. Before or after that, the formation of the wafer rear surface electrode and the like is also performed. In the wafer thinning and TSV processes, heat of 250 to 350° C.
- a wafer having a diameter of 300 mm and a thickness of about 770 ⁇ m can be thinned to a thickness of about 80 to 4 ⁇ m by polishing the back surface opposite to the circuit surface on the front surface.
- ⁇ Third step> A third step of separating the processed semiconductor substrate and adhesive layer from the supporting substrate will be described.
- the processed semiconductor substrate and adhesive layer are separated from the supporting substrate.
- the release layer is usually removed together with the support substrate.
- the method for separating the processed semiconductor substrate and the adhesive layer from the semiconductor substrate may be peeling between the adhesive layer and the peeling layer or support substrate in contact therewith. Examples include, but are not limited to, mechanical peeling using a device having a part, manual peeling, and the like.
- the fourth step is a step of removing the adhesive layer on the semiconductor substrate by the cleaning method of the semiconductor substrate of the present invention. remove it cleanly.
- Various conditions at this time are as described above.
- the method of manufacturing a processed semiconductor substrate of the present invention includes the first to fourth steps described above, but may include steps other than these steps.
- various changes may be made to the above components and methodological elements relating to the first to fourth steps without departing from the gist of the present invention.
- Adhesive Composition 1 [Example 1] 104.14 g of a p-menthane solution (concentration: 80.6% by mass) of MQ resin (manufactured by Wacker Chemie) having a polysiloxane skeleton and a vinyl group as the component (a1) in a 600 mL stirring vessel dedicated to stirrer A, Polyorganosiloxane represented by the following formula (M1) as the component (B) (complex viscosity 800 Pa s, weight average molecular weight 171,899 (dispersity 2.18), manufactured by Wacker Chemie) 58.11 g, as a solvent Add 34.94 g of p-menthane (manufactured by Nippon Terpene Chemical Co., Ltd.) and 6.20 g of n-decane (manufactured by Sankyo Chemical Co., Ltd.) and stir for 5 minutes with a stirrer A to obtain a mixture (I).
- M1 Polyorganosi
- Example 2-2 Same as Example 2-1, except that N-ethyl-2-pyrrolidone was used instead of N-methyl-2-pyrrolidone as the N-substituted amide compound of Component II, and the composition was adjusted to be as shown in Table 1. to obtain a cleaning composition.
- Example 2-3 Example 2-1, except that N,N-dimethylpropionamide was used instead of N-methyl-2-pyrrolidone as the N-substituted amide compound of component II, and the composition was adjusted to have the composition shown in Table 1. A cleaning composition was obtained in the same manner.
- Example 2-4 Example except that 1,3-dimethyl-2-imidazolidinone was used instead of N-methyl-2-pyrrolidone as the N-substituted amide compound of component II, and the composition was adjusted to have the composition shown in Table 1. A cleaning composition was obtained in the same manner as in 2-1.
- Example 1 Fabrication of substrate for evaluation
- the adhesive composition obtained in Example 1 was applied by spin coating to a 4 cm ⁇ 4 cm silicon wafer (775 ⁇ m thick) as a wafer on the device side, and heated at 110° C. for 1.5 minutes (preheat treatment). By heating the wafer at 200° C. for 10 minutes, a thin film having a thickness of about 40 ⁇ m was formed on the wafer to obtain a wafer with an adhesive layer.
- Example 3-1 As a dicing tape, DU-300 (manufactured by Nitto Denko) was cut into 4 ⁇ 4 cm pieces, immersed in 7 mL of the cleaning composition solution of Example 2-1, left for 5 minutes, and then the dicing tape was washed with isopropanol and ultrapure water. After washing, the tape surface was observed with an optical microscope. As a result, no change was observed on the tape surface before and after immersion.
- the adhesive layer is removed (cleaned) from the semiconductor substrate in a short time, as shown in Examples 2-1 to 2-4. It turns out you can. In the present invention, most of the adhesive layer can be peeled off in a short time, so even if a small amount of the adhesive layer remains after peeling, the adhesive residue is dissolved by the dissolving component in the peeling and dissolving composition. removed cleanly. This is also shown in the results of Examples 2-1 to 2-4. Only by immersing the semiconductor substrate in the composition, the adhesive layer on the semiconductor substrate could be removed cleanly.
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Abstract
Description
ただし、基板表面上から接着剤残留物を、簡便な操作で、より短時間にかつよりきれいに除去するという観点からは改良の余地があり、より効果的な洗浄方法を求めて、新たな洗浄方法やその洗浄方法に用いる組成物の開発が進められている。
[1]半導体基板上の接着層を、剥離及び溶解用組成物を用いて剥離及び溶解する工程を含む、半導体基板の洗浄方法であって、
前記剥離及び溶解用組成物が、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒
を含むことを特徴とする半導体基板の洗浄方法。
[2]前記Lが、メチル基又はイソプロピル基である、[1]に記載の半導体基板の洗浄方法。
[3]前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、[2]に記載の半導体基板の洗浄方法。
[4]前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、[1]~[3]のいずれかに記載の半導体基板の洗浄方法。
[5]前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、[1]~[4]のいずれかに記載の半導体基板の洗浄方法。
[6]前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、[1]~[5]のいずれかに記載の半導体基板の洗浄方法。
[7]前記接着剤成分(S)が、シロキサン系接着剤を含む、[6]に記載の半導体基板の洗浄方法。
[8]前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、[7]に記載の半導体基板の洗浄方法。
[9]前記剥離及び溶解する工程が、剥離された接着層を取り除く工程を含む、[1]~[8]のいずれかに記載の半導体基板の洗浄方法。
[10]半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
支持基板から、半導体基板及び接着層を分離する第3工程、及び
半導体基板上の接着層を剥離及び溶解用組成物を用いて剥離及び溶解して除去する第4工程
を含む、加工された半導体基板の製造方法において、
前記剥離及び溶解用組成物が、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒
を含むことを特徴とする加工された半導体基板の製造方法。
[11]前記Lが、メチル基又はイソプロピル基である、[10]に記載の加工された半導体基板の製造方法。
[12]前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、[11]に記載の加工された半導体基板の製造方法。
[13]前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、[10]~[12]のいずれかに記載の加工された半導体基板の製造方法。
[14]前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、[10]~[13]のいずれかに記載の加工された半導体基板の製造方法。
[15]前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、[10]~[14]のいずれかに記載の加工された半導体基板の製造方法。
[16]前記接着剤成分(S)が、シロキサン系接着剤を含む、[15]に記載の加工された半導体基板の製造方法。
[17]前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、[16]に記載の加工された半導体基板の製造方法。
[18]前記剥離及び溶解して除去する第4工程が、剥離された接着層を取り除く工程を含む、[10]~[17]のいずれかに記載の加工された半導体基板の製造方法。
[19]半導体基板を洗浄する際に前記半導体基板上の接着層を剥離及び溶解して除去するために用いられる剥離及び溶解用組成物であって、
前記剥離及び溶解用組成物が、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒
を含むことを特徴とする剥離及び溶解用組成物。
[20]前記Lが、メチル基又はイソプロピル基である、[19]に記載の剥離及び溶解用組成物。
[21]前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、[20]に記載の剥離及び溶解用組成物。
[22]前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、[19]~[21]のいずれかに記載の剥離及び溶解用組成物。
[23]前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、[19]~[22]のいずれかに記載の剥離及び溶解用組成物。
[24]前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、[19]~[23]のいずれかに記載の剥離及び溶解用組成物。
[25]前記接着剤成分(S)が、シロキサン系接着剤を含む、[24]に記載の加工された剥離及び溶解用組成物。
[26]前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、[25]に記載の剥離及び溶解用組成物。
本発明の半導体基板の洗浄方法は、半導体基板上の接着層を、剥離及び溶解用組成物を用いて剥離及び溶解する工程を含む。
剥離及び溶解用組成物は、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒を含む。
半導体基板全体を構成する主な材質としては、この種の用途に用いられるものであれば特に限定されないが、例えば、シリコン、シリコンカーバイド、化合物半導体などが挙げられる。
半導体基板の形状は、特に限定されないが、例えば、円盤状である。なお、円盤状の半導体基板は、その面の形状が完全な円形である必要はなく、例えば、半導体基板の外周は、オリエンテーション・フラットと呼ばれる直線部を有していてもよいし、ノッチと呼ばれる切込みを有していてもよい。
円盤状の半導体基板の厚さは、半導体基板の使用目的などに応じて適宜定めればよく、特に限定されないが、例えば、500~1,000μmである。
円盤状の半導体基板の直径としては、半導体基板の使用目的などに応じて適宜定めればよく、特に限定されないが、例えば、100~1,000mmが挙げられる。
半導体基板上の接着層は、例えば、接着剤成分(S)を含む接着剤組成物から得られる膜である。
このような接着剤成分(S)は、この種の用途に用いられるものであれば特に限定されるものではなく、例えば、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤、フェノール樹脂系接着剤等が挙げられる。
これらの中でも、ウエハー等の加工時は好適な接着能を示し、加工の後は好適に剥離可能であり、更に耐熱性にも優れることから、接着剤成分(S)としては、シロキサン系接着剤が好ましい。
好ましい態様においては、本発明で用いる接着剤組成物は、接着剤成分として、ヒドロシリル化反応により硬化する成分(A)を含む。
また、本発明で用いる接着剤組成物は、好ましい態様においてポリオルガノシロキサンを含有する。
成分(A)は、ヒドロシリル化反応によって硬化する成分であってもよいし、ヒドロシリル化反応によって硬化するポリオルガノシロキサン成分(A’)であってもよい。
他の好ましい態様においては、成分(A)は、例えば、成分(A’)の一例としての、ケイ素原子に結合した炭素数2~40のアルケニル基を有するポリオルガノシロキサン(a1)と、Si-H基を有するポリオルガノシロキサン(a2)と、白金族金属系触媒(A2)と、を含有する。ここで、炭素数2~40のアルケニル基は置換されていてもよい。置換基としては、例えば、ハロゲン原子、ニトロ基、シアノ基、アミノ基、ヒドロキシ基、カルボキシル基、アリール基、ヘテロアリール基等が挙げられる。
他の好ましい態様においては、ヒドロシリル化反応によって硬化するポリオルガノシロキサン成分(A’)は、SiO2で表されるシロキサン単位(Q単位)、R1R2R3SiO1/2で表されるシロキサン単位(M単位)、R4R5SiO2/2で表されるシロキサン単位(D単位)及びR6SiO3/2で表されるシロキサン単位(T単位)からなる群より選ばれる1種又は2種以上の単位を含むポリシロキサン(A1)と、白金族金属系触媒(A2)とを含み、ポリシロキサン(A1)は、SiO2で表されるシロキサン単位(Q’単位)、R1’R2’R3’SiO1/2で表されるシロキサン単位(M’単位)、R4’R5’SiO2/2で表されるシロキサン単位(D’単位)及びR6’SiO3/2で表されるシロキサン単位(T’単位)からなる群より選ばれる1種又は2種以上の単位を含むとともに、M’単位、D’単位及びT’単位からなる群より選ばれる少なくとも1種を含むポリオルガノシロキサン(a1’)と、SiO2で表されるシロキサン単位(Q”単位)、R1”R2”R3”SiO1/2で表されるシロキサン単位(M”単位)、R4”R5”SiO2/2で表されるシロキサン単位(D”単位)及びR6”SiO3/2で表されるシロキサン単位(T”単位)からなる群より選ばれる1種又は2種以上の単位を含むとともに、M”単位、D”単位及びT”単位からなる群より選ばれる少なくとも1種を含むポリオルガノシロキサン(a2’)とを含む。
なお、(a1’)は、(a1)の一例であり、(a2’)は、(a2)の一例である。
置換されていてもよい環状アルケニル基の具体例としては、シクロペンテニル、シクロヘキセニル等が挙げられるが、これらに限定されず、その炭素数は、通常4~14であり、好ましくは5~10、より好ましくは5~6である。
なお、本発明において、ポリオルガノシロキサンの重量平均分子量及び数平均分子量並びに分散度は、例えば、GPC装置(東ソー(株)製EcoSEC,HLC-8320GPC)及びGPCカラム(東ソー(株)TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H)を用い、カラム温度を40℃とし、溶離液(溶出溶媒)としてテトラヒドロフランを用い、流量(流速)を0.35mL/分とし、標準試料としてポリスチレン(昭和電工(株)製、Shodex)を用いて、測定することができる。
このような白金系の金属触媒は、ポリオルガノシロキサン(a1)のアルケニル基とポリオルガノシロキサン(a2)のSi-H基とのヒドロシリル化反応を促進するための触媒である。
白金とオレフィン類との錯体としては、例えばジビニルテトラメチルジシロキサンと白金との錯体が挙げられるが、これに限定されない。
白金族金属系触媒(A2)の量は、特に限定されないが、通常、ポリオルガノシロキサン(a1)及びポリオルガノシロキサン(a2)の合計量に対して、1.0~50.0ppmの範囲である。
重合抑制剤は、ヒドロシリル化反応の進行を抑制できる限り特に限定されるものではなく、その具体例としては、1-エチニル-1-シクロヘキサノール、1,1-ジフェニル-2-プロピオン-1-オール等のアルキニルアルコール等が挙げられる。
重合抑制剤の量は、特に限定されないが、ポリオルガノシロキサン(a1)及びポリオルガノシロキサン(a2)の合計量に対して、通常、その効果を得る観点から1000.0ppm以上であり、ヒドロシリル化反応の過度な抑制を防止する観点から10000.0ppm以下である。
このような剥離剤成分(B)として、典型的には、ポリオルガノシロキサンが挙げられる。ある好ましい態様においては、その具体例としては、エポキシ基含有ポリオルガノシロキサン、メチル基含有ポリオルガノシロキサン、フェニル基含有ポリオルガノシロキサン等が挙げられるが、これらに限定されない。
また、その他の好ましい態様においては、剥離剤成分(B)としては、ポリジメチルシロキサンが挙げられ、当該ポリジメチルシロキサンは変性されていてもよい。変性されていてもよいポリジメチルシロキサンとしては、例えば、エポキシ基含有ポリジメチルシロキサン、無変性のポリジメチルシロキサン、フェニル基含有ポリジメチルシロキサン等が挙げられるが、これらに限定されない。
剥離剤成分(B)であるポリオルガノシロキサンの複素粘度は、25℃でレオメータ(例えば、アントンパール(株)製 レオメータMCR-302)を用いて測定することができる。
エポキシ基を含む有機基におけるエポキシ基は、その他の環と縮合せずに、独立したエポキシ基であってもよく、1,2-エポキシシクロヘキシル基のように、その他の環と縮合環を形成しているエポキシ基であってもよい。
エポキシ基を含む有機基の具体例としては、3-グリシドキシプロピル、2-(3,4-エポキシシクロヘキシル)エチルが挙げられるが、これらに限定されない。
本発明において、エポキシ基含有ポリオルガノシロキサンの好ましい一例としては、エポキシ基含有ポリジメチルシロキサンを挙げることができるが、これに限定されない。
本発明の好ましい態様においては、エポキシ基含有ポリオルガノシロキサンの具体例としては、D10単位のみからなるポリオルガノシロキサン、D10単位とQ単位とを含むポリオルガノシロキサン、D10単位とM単位とを含むポリオルガノシロキサン、D10単位とT単位とを含むポリオルガノシロキサン、D10単位とQ単位とM単位とを含むポリオルガノシロキサン、D10単位とM単位とT単位とを含むポリオルガノシロキサン、D10単位とQ単位とM単位とT単位とを含むポリオルガノシロキサン等が挙げられる。
R21は、ケイ素原子に結合する基であり、アルキル基を表し、アルキル基の具体例としては、前述の例示を挙げることができる。中でも、R21としては、メチル基が好ましい。
本発明において、メチル基含有ポリオルガノシロキサンの好ましい一例としては、ポリジメチルシロキサンを挙げることができるが、これに限定されない。
ポリオルガノシロキサンの市販品としては、例えば、ワッカーケミ社製の製品であるWACKERSILICONE FLUID AK シリーズ(AK50、AK 350、AK 1000、AK 10000、AK 1000000)やGENIOPLAST GUM、信越化学工業(株)製 ジメチルシリコーンオイル(KF-96L、KF-96A、KF-96、KF-96H、KF-69、KF-965、KF-968)、環状ジメチルシリコーンオイル(KF-995);ゲレスト社製 エポキシ基含有ポリオルガノシロキサン(商品名CMS-227、ECMS-327)、信越化学工業(株)製 エポキシ基含有ポリオルガノシロキサン(KF-101、KF-1001、KF-1005、X-22-343)、ダウコーニング社製 エポキシ基含有ポリオルガノシロキサン(BY16-839);ゲレスト社製 フェニル基含有ポリオルガノシロキサン(PMM-1043、PMM-1025、PDM-0421、PDM-0821)、信越化学工業(株)製 フェニル基含有ポリオルガノシロキサン(KF50-3000CS)、MOMENTIVE社製 フェニル基含有ポリオルガノシロキサン(TSF431、TSF433)等が挙げられるが、これらに限定されない。
すなわち、ヒドロシリル化反応によって硬化するポリオルガノシロキサン成分(A’)が含まれる場合、成分(A’)と剥離剤成分(B)との比率は、質量比〔(A’):(B)〕で、好ましくは99.995:0.005~30:70、より好ましくは99.9:0.1~75:25である。
本発明において、膜構成成分とは、組成物に含まれる溶媒以外の成分を意味する。
その混合順序は特に限定されるものではないが、容易にかつ再現性よく剥離用接着剤組成物を製造できる方法の一例としては、例えば、成分(A)と剥離剤成分(B)を溶媒に溶解させる方法や、成分(A)と剥離剤成分(B)の一部を溶媒に溶解させ、残りを溶媒に溶解させ、得られた溶液を混合する方法が挙げられるが、これらに限定されない。なお、接着剤組成物を調製する際、成分が分解したり変質したりしない範囲で、適宜加熱してもよい。
本発明においては、異物を除去する目的で、接着剤組成物を製造する途中で又は全ての成分を混合した後に、用いる溶媒や溶液等をフィルター等を用いてろ過してもよい。
剥離及び溶解用組成物は、半導体基板から接着層を取り除くため、半導体基板の洗浄方法に用いられる組成物である。
剥離及び溶解用組成物には、接着層に対し膨潤させ半導体基板から接着層を剥離するための成分と、接着層を溶解させるための成分が含まれている。
具体的には、剥離及び溶解用組成物は、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒を含む。
第四級アンモニウム塩は、第四級アンモニウムカチオンと、アニオンとから構成されるものであって、この種の用途に用いられるものであれば特に限定されるものではない。
第四級アンモニウム塩は、接着層を溶解させるための成分として有効である。
このような第四級アンモニウムカチオンとしては、典型的には、テトラ(炭化水素)アンモニウムカチオンが挙げられる。一方、それと対を成すアニオンとしては、水酸化物イオン(OH-);フッ素イオン(F-)、塩素イオン(Cl-)、臭素イオン(Br-)、ヨウ素イオン(I-)等のハロゲンイオン;テトラフルオロホウ酸イオン(BF4 -);ヘキサフルオロリン酸イオン(PF6 -)等が挙げられるが、これらに限定されない。
第四級アンモニウム塩中、ハロゲン原子は、カチオンに含まれていても、アニオンに含まれていてもよいが、好ましくはアニオンに含まれる。
フッ化テトラ(炭化水素)アンモニウムにおける炭化水素基の具体例としては、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基等が挙げられる。
より好ましい一態様においては、フッ化テトラ(炭化水素)アンモニウムは、フッ化テトラアルキルアンモニウムを含む。
フッ化テトラアルキルアンモニウムの具体例としては、フッ化テトラメチルアンモニウム、フッ化テトラエチルアンモニウム、フッ化テトラプロピルアンモニウム、フッ化テトラブチルアンモニウム(テトラブチルアンモニウムフルオリドともいう)等が挙げられるが、これらに限定されない。中でも、フッ化テトラブチルアンモニウムが好ましい。
第四級アンモニウム塩の量は、剥離及び溶解用組成物に含まれる溶媒に溶解する限り特に制限されるものではないが、例えば、剥離及び溶解用組成物に対して、通常0.1~5質量%である。
アミド系溶媒は、窒素原子上に活性水素を有さない炭素原子数4以上のN-置換アミド化合物であることが好ましい。
アミド系溶媒の好適な一例としては、下記式(Z)で表される酸アミド誘導体が挙げられる。
また、式(Y)で表される化合物の好ましい一態様として、例えば、1,3-ジメチル-2-イミダゾリジノンも挙げられる。
また、アミド系溶媒の含有量は、非プロトン性溶媒を100質量%としたときに、10~55質量%が好ましく、20~55質量%がより好ましく、20~45質量%がさらに好ましく、20~40質量%が特に好ましい。
尚、本発明では、混合する溶媒の含有量は、水酸基(-OH)を持たない溶媒である非プロトン性溶媒を100質量%としたときの割合で規定する。
これにより、水、メタノール、1-メトキシ-2-プロパノール等のプロトン性溶媒は、含有割合の基準に含めない。
非プロトン性溶媒とは、本発明では、例えば、N,N-ジメチルプロピオンアミド、メシチレンなどをいい、これらの合計量をもとに混合割合を求めることができる。
下記式(L)で表される溶媒は、接着層を膨潤させ、半導体基板から接着層を剥離させるための成分として有効である。
本発明においては、半導体基板上の接着層に対して、剥離及び溶解用組成物を継続的に接触させる。この洗浄操作を行うことで、該接着層を膨潤させて剥離することと該接着層を溶解させることが一緒に行われる。1つの洗浄用組成物を用いた洗浄操作で、接着層の膨潤及び剥離と溶解とが一緒に行われることで、簡単な洗浄操作で、より短時間にかつよりきれいに、半導体基板から接着層を除去(洗浄)することができる。
なお、本発明において、除去(洗浄)するとは、半導体基板から接着層が取り除かれることをいい、接着層が膨潤し半導体基板から剥離される場合も、接着層が溶解し溶液中に溶けて半導体基板から無くなる場合も、「除去(洗浄)」に含まれる。
半導体基板上の接着層を剥離及び溶解用組成物に継続的に接触させる方法は、半導体基板上の接着層が、剥離及び溶解用組成物に時間的継続性をもって接触する限り特に限定されるものではなく、この時間的継続性には、接着層が常に剥離及び溶解用組成物に接触している場合だけでなく、例えば、接着層と有機溶媒との接触を一定時間行った後、当該接触を一度休止し、再度当該接触を行う場合やこれを繰り返す場合も含まれ、また、半導体基板上の接着層全体が剥離及び溶解用組成物に接触している場合だけでなく、接着層の一部が剥離及び溶解用組成物に接触している場合も含まれるが、より効果的な洗浄を再現性よく実現する観点から、半導体基板上の接着層が、剥離及び溶解用組成物に常に接触している態様が好ましく、また、半導体基板上の接着層全体が、剥離及び溶解用組成物に接触している態様が好ましい。
浸漬時間は、接着層の膨潤及び溶解が起こり、接着層が半導体基板から剥離するまでの時間とし、特に限定されるものではないが、より効果的な洗浄を再現性よく実現する観点から、5秒以上であり、プロセス上のスループットの観点から、5分以下である。
例えば、半導体ウエハーは研磨され薄化された後、該薄化後の半導体ウエハーはダイシングテープにマウントされ、その後半導体ウエハーと支持体は分離(剥離)される。支持体が分離(剥離)された後、半導体ウエハー側に残存した接着層は、半導体ウエハー上から取り除かれるため洗浄剤組成物で洗浄される。その際、洗浄剤組成物として、上記特許文献1及び2の洗浄剤組成物のような接着剤残留物を溶解して取り除こうとするタイプの洗浄剤組成物を用いると、ダイシングテープの表面が変化し、ダイシングテープがダメージを受ける(下記実施例の欄に記載の[比較例2-1]の結果参照)。
しかし、本発明の剥離及び溶解用組成物を用いて接着層付き半導体基板を洗浄すると、接着層の大半を短時間で剥離することができ、剥離後に少量残った接着層も、剥離及び溶解用組成物中の溶解成分により溶解されることから、接着層を取り除く全体の除去(洗浄)時間は短くて済み、洗浄工程におけるダイシングテープのダメージを有効に防止することができる。また、本発明の剥離及び溶解用組成物中には、接着層を溶解させるための成分だけでなく、接着層を膨潤させ剥離させるための成分も含まれているが、それにより、組成物中における溶解成分、つまり[I]成分(第四級アンモニウム塩)の占める割合が少なくて済み、それもダイシングテープのダメージを生じさせないことに有効に寄与していると考えられる。
本発明の剥離及び溶解用組成物を用いて接着層の除去工程を行うと、ダイシングテープのダメージを有効に防止することができる(下記実施例の欄に記載の[実施例3-1]の結果参照)。
剥離した接着層を取り除く方法は、半導体基板の上から剥離した接着層が除去される限り特に限定されるものではなく、接着層が付いた半導体基板を剥離及び溶解用組成物に浸漬する場合には、剥離及び溶解用組成物から半導体基板を取り出すことなく、剥離及び溶解用組成物中に存在する剥離された接着層を取り除いてもよい。或いは、剥離及び溶解用組成物から半導体基板を取り出して、剥離した接着層から半導体基板を引き離すことにより剥離した接着層を取り除いてもよい。この際、単に剥離及び溶解用組成物から半導体基板を取り出すことで、剥離した接着層が自然に剥離及び溶解用組成物中に残り、その大部分を取り除くことができる場合もある。
本発明の半導体基板の洗浄方法に用いる剥離及び溶解用組成物も、本発明の対象である。
本発明の剥離及び溶解用組成物は、半導体基板上の接着層を当該半導体基板から除去(洗浄)するために用いられるものであって、好ましい態様や諸条件については、上述の通りである。本発明の剥離及び溶解用組成物は、当該組成物を構成する溶媒を必要があれば任意の順序で混合することで製造することができる。その際、必要があればろ過等をしてもよい。
上記説明した本発明の半導体基板の洗浄方法を用いることで、半導体基板の基板上の接着層、特にヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含むシロキサン系接着剤から得られる硬化膜である接着層を効率的に取り除くことが可能となり、高効率で良好な半導体素子の製造を期待できる。
このように半導体プロセスにおける本発明の半導体基板の洗浄方法の使用例としては、TSV等の半導体パッケージ技術に用いられる薄化等の加工された半導体基板の製造方法における使用が挙げられる。
第1工程:半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する工程、
第2工程:得られた積層体の半導体基板を加工する工程、
第3工程:支持基板から、半導体基板及び接着層を分離する工程、及び
第4工程:半導体基板上の接着層を剥離及び溶解用組成物を用いて剥離及び溶解して除去する工程
を含む、加工された半導体基板の製造方法が挙げられる。
ここで、剥離及び溶解用組成物は、上記<剥離及び溶解用組成物>の欄で説明したとおりである。
上記第4工程において、本発明の半導体基板の洗浄方法が使用される。
以下、各工程について、詳しく説明する。
第1工程において接着層を形成するために用いられる接着剤組成物としては、上述の各種接着剤を使用し得るが、本発明の半導体基板の洗浄方法は、ポリシロキサン系接着剤から得られる接着層を取り除くために効果的であり、ヒドロシリル化反応により硬化する成分(A)を含むポリシロキサン系接着剤から得られる接着層を取り除くためにより効果的である。
従って、以下、ポリシロキサン系接着剤(接着剤組成物)を用いて得られる接着層を用いて加工された半導体基板を製造する際に、当該接着層を本発明の洗浄方法によって取り除く例について説明するが、本発明は、これに限定されるわけではない。
その他の態様においては、かかる第1工程は、例えば、半導体基板のウエハーの回路面に接着剤組成物を塗布し、それを加熱して接着剤塗布層を形成する工程と、支持基板の表面に剥離剤組成物を塗布し、それを加熱して剥離剤塗布層を形成する工程と、半導体基板の接着剤塗布層と、支持基板の剥離剤塗布層とを、加熱処理及び減圧処理の少なくとも一方を実施しながら、半導体基板及び支持基板の厚さ方向の荷重をかけて密着させ、その後、後加熱処理を実施することにより、積層体とする工程とを含む。なお、接着剤組成物を半導体基板に、剥離剤組成物を支持基板にそれぞれ塗布し、加熱したが、いずれか一方の基板に、接着剤組成物及び剥離剤組成物の塗布及び加熱をそれぞれ順次行ってもよい。
上記各態様において、加熱処理、減圧処理、両者の併用のいずれの処理条件を採用するかは、接着剤組成物の種類や剥離剤組成物の具体的組成、両組成物から得られる膜の相性、膜厚、求める接着強度等の各種事情を勘案した上で決定される。
特に、本発明の半導体基板の洗浄方法は、バンプ付き半導体基板に対しても効果的に基板の洗浄が行える。
このようなバンプ付き半導体基板の具体例としては、ボールバンプ、印刷バンプ、スタッドバンプ、めっきバンプ等のバンプを有するシリコンウエハーが挙げられ、通常、バンプ高さ1~200μm程度、バンプ径1~200μm、バンプピッチ1~500μmという条件から適宜選択される。
めっきバンプの具体例としては、SnAgバンプ、SnBiバンプ、Snバンプ、AuSnバンプ等のSnを主体とした合金めっき等が挙げられるが、これらに限定されない。
加熱は、ホットプレート、オーブン等を用いて行うことができる。
なお、後加熱処理の一つの目的は、接着剤成分(S)をより好適に硬化させることである。
次に、以上説明した方法で得られた積層体の半導体基板を加工する第2工程について説明する。
本発明で用いる積層体に施される加工の一例としては、半導体基板の表面の回路面とは反対の裏面の加工が挙げられ、典型的には、ウエハー裏面の研磨によるウエハーの薄化が挙げられる。このような薄化されたウエハーを用いて、シリコン貫通電極(TSV)等の形成を行い、次いで支持体から薄化ウエハーを剥離してウエハーの積層体を形成し、3次元実装化される。また、それに前後してウエハー裏面電極等の形成も行われる。ウエハーの薄化とTSVプロセスには支持体に接着された状態で250~350℃の熱が付加されるが、本発明で用いる積層体が含む接着層は、その熱に対する耐熱性を有している。
例えば、直径300mm、厚さ770μm程度のウエハーは、表面の回路面とは反対の裏面を研磨して、厚さ80~4μm程度まで薄化することができる。
加工した半導体基板及び接着層と支持基板とを分離する第3工程について説明する。
第3工程では、加工された半導体基板及び接着層と、支持基板とを分離する。この際、剥離層が積層体に含まれる場合は、通常、支持基板とともに、剥離層も取り除く。
加工された半導体基板及び接着層と、半導体基板とを分離する方法は、接着層とそれと接する剥離層又は支持基板との間で剥離すればよく、そのような剥離方法としては、レーザー剥離、鋭部を有する機材による機械的な剥離、マニュアルで引きはがす剥離等が挙げられるが、これらに限定されない。
次に、加工した半導体基板の上の接着層を除去し、加工した半導体基板を洗浄する第4工程について説明する。
第4工程は、半導体基板上の接着層を、本発明の半導体基板の洗浄方法により取り除く工程であり、具体的には、例えば、薄化基板上の接着層を本発明の洗浄方法によって短時間できれいに取り除く。この際の諸条件は、上述した通りである。
[装置]
(1)撹拌機A:(株)シンキー製 自転公転ミキサー ARE-500
(2)撹拌機B:アズワン(株)製 ミックスローター VMR-5R
(3)粘度計:東機産業(株)製 回転粘度計TVE-22H
(4)光学顕微鏡:オリンパス(株)製 半導体/FPD検査顕微鏡 MX61L
[実施例1]
撹拌機A専用の600mL撹拌容器に、前述の成分(a1)としてポリシロキサン骨格とビニル基とを有するMQ樹脂(ワッカーケミ社製)のp-メンタン溶液(濃度80.6質量%)104.14g、前述の成分(B)として下記式(M1)で表されるポリオルガノシロキサン(複素粘度800Pa・s、重量平均分子量171,899(分散度2.18)、ワッカーケミ社製)58.11g、溶媒としてp‐メンタン(日本テルペン化学(株)製)34.94g及びn-デカン(三協化学(株)製)6.20gを加え、撹拌機Aによる5分間の撹拌し、混合物(I)を得た。
得られた混合物(I)に、前述の成分(a2)として粘度100mPa・sのSiH基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)16.79g、及び前述の成分(a1)として下記式(V)で表される粘度200mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)24.54gを加え、混合物(II)を得た。
前述の成分(A3)として1,1-ジフェニル-2-プロピン-1-オール(東京化成工業(株)製)1.61g、及び1-エチニル-1-シクロヘキサノール(ワッカーケミ社製)1.61g、並びに溶媒としてp‐メンタン(日本テルペン化学(株)製)3.23gを撹拌機Bで60分間撹拌して、混合物(III)を得た。
得られた混合物(III)のうち1.29gを混合物(II)に加え、撹拌機Aで5分間撹拌し、混合物(IV)を得た。
前述の成分(A2)として白金触媒(ワッカーケミ社製)0.65g、及び前述の成分(a1)として下記式(W)で表される粘度1000mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)19.37gを撹拌機Aで5分間撹拌し、混合物(V)を得た。
得られた混合物(V)のうち4.00gを混合物(IV)に加え、撹拌機Aで5分間撹拌し、混合物(VI)を得た。
最後に、得られた混合物(VI)をナイロンフィルター300メッシュでろ過し、接着剤組成物1を得た。なお、得られた接着剤組成物1の粘度は、3000mPa・sであった。
[実施例2-1]
テトラブチルアンモニウムフルオリド3水和物(関東化学製)0.77gに、N-メチル-2-ピロリドン7.5gと、メシチレン17.5gを加え撹拌し、洗浄用組成物を得た。
第II成分のN-置換アミド化合物としてN-メチル-2-ピロリドンの代わりにN-エチル-2-ピロリドンを用い、表1の組成になるように調整した以外は、実施例2-1と同様の手順で洗浄用組成物を得た。
第II成分のN-置換アミド化合物として、N-メチル-2-ピロリドンの代わりにN,N-ジメチルプロピオンアミドを用い、表1の組成になるように調整した以外は、実施例2-1と同様の手順で洗浄用組成物を得た。
第II成分のN-置換アミド化合物として、N-メチル-2-ピロリドンの代わりに1,3-ジメチル-2-イミダゾリジノンを用い、表1の組成になるように調整した以外は、実施例2-1と同様の手順で洗浄用組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学製)0.85gに、N-メチル-2-ピロリドン27.48gを加え撹拌し、洗浄用組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学製)1.3gに、N,N-ジメチルプロピオンアミド24.70gを加え撹拌し、洗浄用組成物を得た。
[製造例1]
デバイス側のウエハーとしての4cm×4cmのシリコンウエハー(厚さ775μm)に、実施例1で得られた接着剤組成物をスピンコートで塗布し、110℃で1.5分間加熱(前加熱処理)することにより、ウエハー上の残留溶媒を除去し200℃10分加熱することで、ウエハー上に厚さが約40μmの薄膜を形成し、接着層付きウエハーを得た。
製造例1で作製した接着層付きウエハーを実施例2-1~実施例2-4、比較例1-1~比較例1-2で得られた各洗浄用組成物7mLに浸漬させた。ウエハー上から接着層が完全に剥離するまでの時間を剥離時間とした。結果を下記表1に示す。
製造例1で作製した接着層付きウエハーを実施例2-1~実施例2-4、比較例1-1~比較例1-2で得られた各洗浄用組成物7mLに浸漬した。洗浄用組成物に浸漬後、2分以内に接着層が剥離した場合はピンセットで剥離した接着層を除去した。浸漬開始から2分間放置した後に、基板をイソプロパノールと超純水で洗浄し、光学顕微鏡で基板上の残渣の有無を確認した。結果を下記表1に示す。尚、比較例1-1~1-2は、上記[4]の試験において、300秒後も剥離しなかったため、[5]の試験は行っていない(表中、「N.A.」と表記)。
[実施例3-1]
ダイシングテープとして、DU-300(日東電工製)を4×4cmに切断し、実施例2-1の洗浄用組成液7mLに浸漬し、5分間放置した後に、ダイシングテープをイソプロパノールと超純水で洗浄し、光学顕微鏡でテープ表面を観察した。その結果、浸漬前後でテープ表面上に変化は見られなかった。
ダイシングテープとして、DU-300(日東電工製)を4×4cmに切断し、比較例1-2の洗浄用組成液7mLに浸漬し、5分間放置した後に、ダイシングテープをイソプロパノールと超純水で洗浄し、光学顕微鏡でテープ表面を観察した。その結果、浸漬後の基板ではテープ表面に凹凸の形状が見られ、テープダメージが確認された。
つまり、本発明の半導体基板の洗浄方法を用いると、接着層をその表面に有する半導体基板上から、簡便な操作で、より短時間にかつよりきれいに除去(洗浄)することができる。
また、本発明の半導体基板の洗浄方法を用いると、[実施例3-1]で示すように、接着層の除去工程においてダイシングテープのダメージは生じなかった。
Claims (26)
- 前記Lが、メチル基又はイソプロピル基である、請求項1に記載の半導体基板の洗浄方法。
- 前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、請求項2に記載の半導体基板の洗浄方法。
- 前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、請求項1に記載の半導体基板の洗浄方法。
- 前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、請求項1に記載の半導体基板の洗浄方法。
- 前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、請求項1に記載の半導体基板の洗浄方法。
- 前記接着剤成分(S)が、シロキサン系接着剤を含む、請求項6に記載の半導体基板の洗浄方法。
- 前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、請求項7に記載の半導体基板の洗浄方法。
- 前記剥離及び溶解する工程が、剥離された接着層を取り除く工程を含む、請求項1に記載の半導体基板の洗浄方法。
- 半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
支持基板から、半導体基板及び接着層を分離する第3工程、及び
半導体基板上の接着層を剥離及び溶解用組成物を用いて剥離及び溶解して除去する第4工程
を含む、加工された半導体基板の製造方法において、
前記剥離及び溶解用組成物が、
[I]成分:第四級アンモニウム塩、
[II]成分:アミド系溶媒、及び
[III]成分:下記式(L)で表される溶媒
を含むことを特徴とする加工された半導体基板の製造方法。
- 前記Lが、メチル基又はイソプロピル基である、請求項10に記載の加工された半導体基板の製造方法。
- 前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、請求項11に記載の加工された半導体基板の製造方法。
- 前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、請求項10に記載の加工された半導体基板の製造方法。
- 前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、請求項10に記載の加工された半導体基板の製造方法。
- 前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、請求項10に記載の加工された半導体基板の製造方法。
- 前記接着剤成分(S)が、シロキサン系接着剤を含む、請求項15に記載の加工された半導体基板の製造方法。
- 前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、請求項16に記載の加工された半導体基板の製造方法。
- 前記剥離及び溶解して除去する第4工程が、剥離された接着層を取り除く工程を含む、請求項10に記載の加工された半導体基板の製造方法。
- 前記Lが、メチル基又はイソプロピル基である、請求項19に記載の剥離及び溶解用組成物。
- 前記式(L)で表される溶媒が、トルエン、メシチレン、p-シメン及び1,2,4-トリメチルベンゼンから少なくとも選ばれる1種である、請求項20に記載の剥離及び溶解用組成物。
- 前記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩である、請求項19に記載の剥離及び溶解用組成物。
- 前記アミド系溶媒が、下記式(Z)で表される酸アミド誘導体、または下記式(Y)で表される化合物である、請求項19に記載の剥離及び溶解用組成物。
- 前記接着層が、シロキサン系接着剤、アクリル樹脂系接着剤、エポキシ樹脂系接着剤、ポリアミド系接着剤、ポリスチレン系接着剤、ポリイミド接着剤及びフェノール樹脂系接着剤から選ばれる少なくとも1種を含む接着剤成分(S)を含む接着剤組成物を用いて得られる膜である、請求項19に記載の剥離及び溶解用組成物。
- 前記接着剤成分(S)が、シロキサン系接着剤を含む、請求項24に記載の加工された剥離及び溶解用組成物。
- 前記シロキサン系接着剤が、ヒドロシリル化反応により硬化するポリオルガノシロキサン成分(A’)を含む、請求項25に記載の剥離及び溶解用組成物。
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US6818608B2 (en) | 2002-02-01 | 2004-11-16 | John C. Moore | Cured polymers dissolving compositions |
JP2014096449A (ja) * | 2012-11-08 | 2014-05-22 | Nitto Denko Corp | ウエハの加工方法および該ウエハの加工方法により得られたウエハ |
WO2014092022A1 (ja) | 2012-12-11 | 2014-06-19 | 富士フイルム株式会社 | シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法 |
WO2020166703A1 (ja) * | 2019-02-15 | 2020-08-20 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
JP2021082738A (ja) * | 2019-11-20 | 2021-05-27 | 日産化学株式会社 | 洗浄剤組成物の洗浄能の向上方法、洗浄剤組成物の製造方法及び洗浄剤組成物 |
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US6818608B2 (en) | 2002-02-01 | 2004-11-16 | John C. Moore | Cured polymers dissolving compositions |
JP2014096449A (ja) * | 2012-11-08 | 2014-05-22 | Nitto Denko Corp | ウエハの加工方法および該ウエハの加工方法により得られたウエハ |
WO2014092022A1 (ja) | 2012-12-11 | 2014-06-19 | 富士フイルム株式会社 | シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法 |
WO2020166703A1 (ja) * | 2019-02-15 | 2020-08-20 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
JP2021082738A (ja) * | 2019-11-20 | 2021-05-27 | 日産化学株式会社 | 洗浄剤組成物の洗浄能の向上方法、洗浄剤組成物の製造方法及び洗浄剤組成物 |
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