WO2023033452A1 - Broche de sonde en porte-à-faux - Google Patents
Broche de sonde en porte-à-faux Download PDFInfo
- Publication number
- WO2023033452A1 WO2023033452A1 PCT/KR2022/012692 KR2022012692W WO2023033452A1 WO 2023033452 A1 WO2023033452 A1 WO 2023033452A1 KR 2022012692 W KR2022012692 W KR 2022012692W WO 2023033452 A1 WO2023033452 A1 WO 2023033452A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cantilever
- probe pin
- type probe
- tip portion
- tip
- Prior art date
Links
- 239000000523 sample Substances 0.000 title claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 239000010407 anodic oxide Substances 0.000 claims description 25
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 description 29
- 239000000956 alloy Substances 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000011148 porous material Substances 0.000 description 11
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 10
- 239000011572 manganese Substances 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 9
- 229910052703 rhodium Inorganic materials 0.000 description 7
- 239000010948 rhodium Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000010953 base metal Substances 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06738—Geometry aspects related to tip portion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
Definitions
- This long beam structure (i) forms excessive debris and scratch marks when removing the oxide film layer, (ii) causes a problem of plastic deformation due to stress concentration, and (iii) causes a difficult problem in realizing a narrow pitch.
- Patent Document 2 Publication No. 10-2020-0110681 Patent Publication
- an object of the present invention is to provide a cantilever-type probe pin capable of effectively inspecting the electrical characteristics of an object to be inspected.
- the widths of the plate-shaped plates constituting the elastic part are generally the same.
- FIG. 2 is a view showing a cantilever-type probe pin according to a preferred embodiment of the present invention.
- the elastic part 120 includes a straight part 121 and a curved part 123 .
- the elastic part 120 is formed by alternately connecting a plurality of straight parts 121 and a plurality of curved parts 123 .
- the straight portion 121 connects the curved portions 123 adjacent to the left and right, and the curved portion 123 connects the straight portions 121 adjacent to the top and bottom.
- the curved portion 123 is provided in an arc shape.
- the front end portion 130 includes a tip portion 131 in contact with the test object.
- the tip portion 200 is provided at the tip portion 130 .
- the front end 130, the elastic part 120, and the base end 110 may be formed by stacking a plurality of metal layers, and the tip part 200 may be provided with a single metal layer.
- the tip portion 130, the elastic portion 120, and the base portion 110 may be formed by including a first metal and a second metal, and the tip portion 200 is a metal of any one of the first metal and the second metal. can be formed as
- the tip part 200 may be located at the center of the cross section of the front end part 130 .
- the tip portion 200 may protrude from the end surface of the tip portion 130 to a smaller area than the cross section of the tip portion 130 . Through this, the removal efficiency of the oxide film layer by the tip portion 200 can be improved.
- FIG. 3 is a modified example of the position of the tip portion 200 shown in FIG. 2 .
- one end of the tip portion 200 is coupled to the tip portion 130 with the same area as the cross section of the tip portion 130, and the other end of the tip portion 200 has an area smaller than that of the tip portion 130. It can be formed as a free end. Through this, it is possible to improve the bonding strength between the tip part 200 and the tip part 130 and improve the oxide film layer removal efficiency at the end part.
- the mold M may be made of an anodic oxide film, photoresist, silicon wafer or similar material.
- the anodic oxide film has a thermal expansion coefficient of 2 to 3 ppm/°C. Due to this, when exposed to a high temperature environment, thermal deformation due to temperature is small. Therefore, it is possible to manufacture a precise metal molding without thermal deformation even in a high-temperature environment in which the metal molding is manufactured. In addition, if the mold M made of an anodic oxide film is used, it is possible to achieve the effect of implementing shape precision and fine shapes, which were limited to implement with the mold M made of photoresist.
- FIG. 7A is a plan view showing that the base end 110, the elastic part 120, and the front end 130 are formed by performing an electroplating process on the first inner space IH1
- FIG. 7B is A-A of FIG. 7A. 'It's a cross section.
- a step of forming a second inner space is performed by removing the anodic oxide layer corresponding to the tip portion 200 .
- the second inner space may be formed by wet etching the mold M made of an anodic oxide film.
- a photoresist is provided on the upper surface of the mold M and patterned, and then the anodic oxide film in the patterned open area reacts with the etching solution to form a second inner space.
- the cantilever-type probe pin 100 includes a fine trench 88 formed on its side surface.
- a fine trench 88 in a corrugated form in which peaks and valleys having a depth of 20 nm or more and 1 ⁇ m or less are repeated along the side surface of the cantilever-type probe pin 100 is formed on the side surface of the metal molding.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
La présente invention concerne une broche de sonde en porte-à-faux qui peut tester efficacement les caractéristiques électriques d'un objet à tester.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020210114425A KR20230032064A (ko) | 2021-08-30 | 2021-08-30 | 캔틸레버형 프로브 핀 |
| KR10-2021-0114425 | 2021-08-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023033452A1 true WO2023033452A1 (fr) | 2023-03-09 |
Family
ID=85412870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2022/012692 WO2023033452A1 (fr) | 2021-08-30 | 2022-08-25 | Broche de sonde en porte-à-faux |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20230032064A (fr) |
| TW (1) | TW202323828A (fr) |
| WO (1) | WO2023033452A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090045347A (ko) * | 2006-08-18 | 2009-05-07 | 니혼 하츠쵸 가부시키가이샤 | 도전성 접촉자 유닛 |
| KR20130129238A (ko) * | 2010-12-17 | 2013-11-27 | 가부시끼가이샤 옵토니쿠스 세이미쯔 | 프로브 카드 |
| KR20150020500A (ko) * | 2013-08-13 | 2015-02-26 | 주식회사 기가레인 | 미세 전극 회로 검사용 핀 제조 방법 및 이의 방법으로 제조된 미세 전극 회로 검사용 핀 |
| KR101712367B1 (ko) * | 2015-12-04 | 2017-03-07 | 한국기계연구원 | 계층적 구조를 갖는 반도체 검사용 프로브 및 그 제조 방법 |
| KR20180095315A (ko) * | 2017-02-17 | 2018-08-27 | (주) 루켄테크놀러지스 | 프로브 핀 및 이의 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006119024A (ja) | 2004-10-22 | 2006-05-11 | Tokyo Electron Ltd | プローブおよびその製造方法 |
| IT201800001173A1 (it) | 2018-01-17 | 2019-07-17 | Technoprobe Spa | Sonda di contatto di tipo cantilever e relativa testa di misura |
-
2021
- 2021-08-30 KR KR1020210114425A patent/KR20230032064A/ko unknown
-
2022
- 2022-08-25 WO PCT/KR2022/012692 patent/WO2023033452A1/fr unknown
- 2022-08-29 TW TW111132493A patent/TW202323828A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090045347A (ko) * | 2006-08-18 | 2009-05-07 | 니혼 하츠쵸 가부시키가이샤 | 도전성 접촉자 유닛 |
| KR20130129238A (ko) * | 2010-12-17 | 2013-11-27 | 가부시끼가이샤 옵토니쿠스 세이미쯔 | 프로브 카드 |
| KR20150020500A (ko) * | 2013-08-13 | 2015-02-26 | 주식회사 기가레인 | 미세 전극 회로 검사용 핀 제조 방법 및 이의 방법으로 제조된 미세 전극 회로 검사용 핀 |
| KR101712367B1 (ko) * | 2015-12-04 | 2017-03-07 | 한국기계연구원 | 계층적 구조를 갖는 반도체 검사용 프로브 및 그 제조 방법 |
| KR20180095315A (ko) * | 2017-02-17 | 2018-08-27 | (주) 루켄테크놀러지스 | 프로브 핀 및 이의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230032064A (ko) | 2023-03-07 |
| TW202323828A (zh) | 2023-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6504223B1 (en) | Contact structure and production method thereof and probe contact assembly using same | |
| US11696398B2 (en) | Anodic aluminum oxide structure, probe head having same, and probe card having same | |
| WO2023033452A1 (fr) | Broche de sonde en porte-à-faux | |
| WO2022181951A1 (fr) | Module d'alignement et procédé de transfert d'alignement pour broches de contact électroconductrices | |
| WO2022169196A1 (fr) | Broche de contact électroconductrice | |
| KR20230032062A (ko) | 수직형 프로브 카드 | |
| CN114924102A (zh) | 一种多层复合式探针及其制作方法 | |
| JP2010038803A (ja) | コンタクトプローブ及びコンタクトプローブの製造方法 | |
| KR20220049203A (ko) | 전기 전도성 접촉핀, 이의 제조방법, 검사장치 및 성형물의 제조방법 및 그 성형물 | |
| WO2022177390A1 (fr) | Broche de contact électroconductrice et son procédé de fabrication | |
| KR102498038B1 (ko) | 전기 전도성 접촉핀 및 이의 제조방법 및 전기 전도성 접촉핀 모듈 | |
| JP5058032B2 (ja) | コンタクトプローブの製造方法 | |
| WO2022215906A1 (fr) | Broche de contact électroconductrice, dispositif d'inspection la comprenant, et procédé de fabrication de broche de contact électroconductrice | |
| WO2023059014A1 (fr) | Broche de contact électriquement conductrice | |
| JP3822722B2 (ja) | コンタクトプローブおよびその製造方法と前記コンタクトプローブを備えたプローブ装置 | |
| WO2022182177A1 (fr) | Ensemble broche de contact électroconductrice et son procédé de fabrication | |
| WO2023059013A1 (fr) | Broche de contact électroconductrice et dispositif de test la comprenant | |
| WO2023096282A1 (fr) | Structure de film d'oxydation anodique | |
| WO2023090746A1 (fr) | Broche de contact électriquement conductrice et dispositif d'inspection pourvu de celle-ci | |
| WO2023172046A1 (fr) | Article moulé métallique, son procédé de fabrication et dispositif d'inspection le comprenant | |
| WO2023033382A1 (fr) | Broche de contact électroconductrice et carte de sonde verticale la comportant | |
| WO2022039439A1 (fr) | Moule de film d'oxydation anodique, structure de moule le comprenant, procédé de fabrication d'un article moulé l'utilisant, et article moulé correspondant | |
| US20240192253A1 (en) | Electrically conductive contact pin and manufacturing method therefor | |
| WO2022177388A1 (fr) | Ensemble broches de contact électroconductrices | |
| WO2023033417A1 (fr) | Broche de contact électroconductrice et carte de sonde verticale la comportant |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22864955 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |