WO2023031551A1 - Procede de depot de carbone sur un substrat - Google Patents
Procede de depot de carbone sur un substrat Download PDFInfo
- Publication number
- WO2023031551A1 WO2023031551A1 PCT/FR2022/051631 FR2022051631W WO2023031551A1 WO 2023031551 A1 WO2023031551 A1 WO 2023031551A1 FR 2022051631 W FR2022051631 W FR 2022051631W WO 2023031551 A1 WO2023031551 A1 WO 2023031551A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- carbon
- layer
- ions
- flux
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000000151 deposition Methods 0.000 title claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 68
- 229910052799 carbon Inorganic materials 0.000 title claims description 68
- 150000002500 ions Chemical class 0.000 claims abstract description 87
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 29
- 230000007935 neutral effect Effects 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 230000004907 flux Effects 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 47
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 20
- 238000009434 installation Methods 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 239000010935 stainless steel Substances 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000000869 ion-assisted deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 121
- 230000007797 corrosion Effects 0.000 description 50
- 238000005260 corrosion Methods 0.000 description 50
- 210000002381 plasma Anatomy 0.000 description 39
- 230000008021 deposition Effects 0.000 description 35
- 238000012360 testing method Methods 0.000 description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 13
- 239000002346 layers by function Substances 0.000 description 12
- 239000000446 fuel Substances 0.000 description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 239000011780 sodium chloride Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 229910021607 Silver chloride Inorganic materials 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- AHADSRNLHOHMQK-UHFFFAOYSA-N methylidenecopper Chemical compound [Cu].[C] AHADSRNLHOHMQK-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000013535 sea water Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000840 electrochemical analysis Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004832 voltammetry Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/663—Selection of materials containing carbon or carbonaceous materials as conductive part, e.g. graphite, carbon fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/665—Composites
- H01M4/667—Composites in the form of layers, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/02—Details
- H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
- H01M8/0204—Non-porous and characterised by the material
- H01M8/0206—Metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/02—Details
- H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
- H01M8/0204—Non-porous and characterised by the material
- H01M8/0206—Metals or alloys
- H01M8/0208—Alloys
- H01M8/021—Alloys based on iron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/02—Details
- H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
- H01M8/0204—Non-porous and characterised by the material
- H01M8/0213—Gas-impermeable carbon-containing materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/02—Details
- H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
- H01M8/0204—Non-porous and characterised by the material
- H01M8/0223—Composites
- H01M8/0228—Composites in the form of layered or coated products
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Definitions
- the invention relates to the technical field of vacuum surface treatment, and in particular the physical deposition of carbon in the vapor phase on a substrate.
- the invention relates to electrochemical systems such as fuel cells and batteries, and in particular to proton exchange membrane fuel cells, or "PEMFC” according to the acronym for "proton exchange membrane fuel cells”.
- PEMFC proton exchange membrane fuel cells
- the bipolar plates are critical components for the durability of these systems: they consist of metal sheets whose thickness is approximately 100 ⁇ m. They must be protected by a coating in order to maintain good electrical conduction on the surface, and in order to avoid corrosion of the metal sheets in the aggressive environment of the battery.
- the surface conduction of a bipolar plate made of metallic material, including in a corrosive environment, is generally obtained by depositing a functional layer based on carbon or gold on the extreme surface of a substrate.
- the prior deposition of an underlayer on the substrate can improve the adhesion of the functional layer and ensure good mechanical strength of the stack.
- the adhesion between the layer and the substrate, as well as the mechanical strength of the functional layer, which results in an absence of damage by cracking or by delamination, are important parameters.
- the barrier function of this layer must not be degraded and the functional layer must remain hermetic to the reactive species present in the medium (for example O2, H + , halides) over the operating time of the electrochemical system, for protect the metal substrate from oxidation, in order to prevent the emission into the middle of the cell of metal cations originating from the substrate, even in small quantities.
- the reactive species present in the medium for example O2, H + , halides
- the battery In the case of use of the power supply of an electric vehicle, the battery must have a long life, of the order of 10,000 hours, while maintaining acceptable performance. During such a long period of use, accidental phenomena may occur, such as reagent depletion or local drying or flooding of the battery. These accidental phenomena can lead to local and transient increases in temperature, potential, or current density. In addition, independently of accidental phenomena, the conditions for starting and stopping the electrochemical system, generally in the transient state, can lead to overpotentials at the electrodes.
- the cell membrane when the cell membrane is made of fluoropolymer, it can release F′ ions which, among other things, promote pitting corrosion of stainless steel substrates. This can then lead to a rapid and catastrophic failure of the entire stack.
- HIPIMS high-power impulse magnetron sputtering
- One object of the invention is therefore to overcome the drawbacks of the prior art described above.
- the invention aims in particular to provide a method for depositing a material comprising carbon on a substrate, making it possible to form a layer of carbonaceous material providing good coverage of the substrate, presenting few defects and therefore mechanical weaknesses, while presenting good electrical conduction.
- the invention also aims to provide such a method, which is efficient and inexpensive to implement given the improved properties of the deposited layer described that the method aims to obtain.
- the ratio between the flow of ions directed towards the substrate and the flow of neutral carbon atoms directed towards the substrate is adjusted between 1.7 and 3.5, and a voltage of bias between -35 V and -100 V at the substrate.
- the part obtained by the method of the invention which has an outer surface comprising the metal substrate coated with a layer of carbon-based material, is mainly characterized in that the layer of carbon-based material comprises less than 1% at oxygen.
- This oxygen level is a ratio of the number of oxygen atoms to the number of carbon atoms within the layer of carbon-based material.
- This oxygen ratio of less than 1% at oxygen reflects low contamination of the carbon-based layer by oxygen.
- This ratio is characteristic of the invention. Indeed, the correct implementation of the invention makes it possible to obtain this ratio and thereby to overcome the recurring difficulty hitherto of getting rid of oxygen in carbon-based deposits, because the oxygen can come from the residual vacuum, or from the carbon target which is still porous (the porosity can reach 10% of the volume of the target).
- the layer of carbon-based material is preferably deposited by magnetron sputtering in continuous mode, as opposed to a pulsed mode.
- an ionic assistance is characterized by the quantity of ions directed towards the growing layer of material, as well as by the energy of these ions.
- the flow of ions is directed towards the substrate and the polarization of the latter accelerates the flow of ions.
- the ions which bombard the growing layer come from the magnetron cathode (for example in the case of unbalanced magneton sputtering), and when a complementary plasma source is present, from the magnetron cathode and said source of complementary plasma.
- the flow of ions therefore comprises the ions of the gaseous mixture in which the plasma is generated, such as argon ions for example, and possibly ions from the target. Whatever the nature of the ions, they bombard the growing layer, which densifies it.
- Ion assistance is not necessarily simultaneous with sputtering. They can operate alternately, so that:
- the substrate receives a first quantity of carbon-based material by spraying
- the substrate thus passes in front of the carbon source then in front of the ion source, repeatedly.
- alternations are chosen according to the sputtering mode and according to the design of the installation implementing the deposition process.
- the sputtering and ionic assistance systems can operate continuously, while the part to be coated passes successively in front of said systems.
- the associated ion flux is always greater than zero, that is to say that the ion flux is non-zero, otherwise the ionic assistance could not fulfill its role.
- the flux of neutral carbon atoms is directed from the target towards the substrate. It mainly comprises carbon atoms, constituting the layer of material to be deposited, coming from the target.
- the ion flux and neutral carbon atom flux values are temporal and spatial averages, calculated from measurements. Indeed, it is understood that in practice the substrates to be coated are mobile in the installation, while the magnetron cathode and the plasma source are fixed. The substrates do not receive the same quantities of ions and carbon atoms depending on their position at a given time.
- the substrate bias voltage is defined as being the potential difference applied between the substrates and the ground of the device implementing the method.
- This polarization can be continuous or pulsed.
- the bias voltage is the mean value of the voltage applied to the substrates.
- the bias current is the (average) intensity measured on the biased substrate.
- the (kinetic) energy of the ions is imparted to them by the acceleration in the electric field which prevails around the substrates. It is linked to the bias voltage and is calculated by multiplying the absolute value of the potential difference between the substrate and the plasma by the electrical charge of the particle or of the species considered. In general, it is considered that the potential of the plasma with respect to the mass is negligible compared to the potential difference between the mass and the parts. This amounts to considering that the energy of the monocharged ions in eV corresponds to the voltage delivered by the polarization generator in volts.
- the flow of ions is determined from the polarization current of the substrate, and the flow of neutral carbon atoms is determined from the rate of deposition of the material on the metal substrate;
- the flux of (single charged) ions can be determined by dividing the bias current by the surface of the substrates exposed to the plasma, in order to obtain an average bias current density, then by dividing the said bias current density by the elementary charge.
- the flux of neutral carbon atoms is determined by multiplying the rate of deposition of the material on the metal substrate by the density of the material, and then dividing by the molar mass of the material, then multiplying the result obtained by the number of Avogadro.
- the ratio between the flow of gaseous ions and the flux of neutral carbon atoms is preferably between 2 and 3.1.
- the material deposited on the substrate forms a so-called thin layer, having a thickness greater than or equal to 20 nm, preferably between 20 nm and 500 nm, more preferably between 50 nm and 250 nm, even more preferably between 80 nm and 150 nm, and so more preferred between 80 nm and 120 nm.
- the substrate comprises a stainless steel, titanium, a titanium alloy, or an alloy based on nickel, chromium and iron, which is preferably an Inconel®.
- the substrate is a plate with a thickness of between 10 ⁇ m and 1000 ⁇ m.
- the flow of ions (of the ion assistance) is generated by a magnetron cathode, for example when the process consists of cathode sputtering with an unbalanced magneton.
- the flow of ions is generated by a system complementary to the magnetron cathode, preferably by microwave plasma.
- the substrate passes through an installation in front of a magnetron cathode sputtering station then in front of a plasma generation station, preferably in a cyclic manner.
- the method may comprise a preliminary step of depositing an underlayer on the substrate.
- metal intended to be located between the substrate and the carbon-based material, in contact with said substrate, the material of the metal sub-layer being chosen from one or more of the following materials: chromium, titanium, zirconium, tantalum, or their alloys as well as their nitrides and carbides, and preferably titanium or tantalum, or their alloys (alloys comprising titanium and/or tantalum) as well as their nitrides and carbides.
- its thickness is between 5 nm and 100 nm, preferably between 20 nm and 40 nm.
- the method may comprise a preliminary step of depositing on the substrate an underlayer with carbon base intended to be located between the substrate and the carbon-based material described above, said underlayer being in contact with said carbon-based material.
- the carbon-based underlayer is preferably made of the same material as the overlying layer of carbon-based material.
- the choice of carbon as the material of the sub-layer makes it possible to use only one sputtering target within the magnetron, which therefore makes it possible to simplify the implementation of the process.
- the ratio between the flow of ions directed towards the substrate and the flow of neutral carbon atoms directed towards the substrate is adjusted to a value of less than 1. , and preferably less than 0.5, the ion flux being non-zero.
- the bias voltage applied to the substrate is between -35 V and -100 V, preferably -50 V and -75 V.
- its thickness is between 2 nm and 40 nm, preferably between 10 nm and 30 nm.
- the implementation of the method according to the aforementioned characteristics and comprising a step of a carbon-based material from a target on a metal substrate by magnetron sputtering therefore allows the functionalization of a monopolar or bipolar plate comprising said substrate metal covered with a layer comprising said carbon-based material, for example by providing lasting protection against corrosion of a bipolar plate while maintaining over time a high level of surface electrical conduction.
- the invention therefore also relates to a method of manufacturing a monopolar or bipolar plate comprising a metal substrate covered with a layer comprising a carbon-based material.
- This method comprises a step of depositing said carbon-based material from a target on said metal substrate, by magnetron cathodic sputtering, according to the deposition method described above.
- the invention also relates to a part that can be obtained by a process for depositing a carbon-based material from a target on a metallic substrate, by sputtering in the presence of an ionic assistance, as previously described.
- Said part has an outer surface comprising said metal substrate coated with a layer of carbon-based material.
- the layer of carbon-based material comprises less than 1 at% oxygen, calculated as the number of oxygen atoms relative to the number of carbon atoms within the layer of carbon-based material.
- FIG.1 is a schematic representation, seen from above, of an installation for implementing the method according to the invention.
- FIG.2 is a schematic representation, seen from above, of another installation for implementing the method according to the invention.
- FIG.3 is a graph illustrating the corrosion current density of layers of carbon-based material deposited on substrates obtained during several series of tests, as a function of the ratio between the flux of ions and the flux of neutral carbon atoms during their deposition.
- FIG.4 is a micrograph illustrating the exposure after corrosion test of a substrate coated with a deposit not in accordance with the invention.
- FIG.5 is a graph of cyclic voltammetry in a chlorine environment conducted on layers of carbon-based material deposited on stainless steel substrates as a function of the ratio between the flux of ions and the flux of neutral carbon atoms, obtained during several series of tests.
- FIG.6 is a detailed view of the graph in Figure 5.
- FIG.7 is a graph illustrating the interfacial contact resistance of 100 nm layers of carbon-based material deposited on substrates in function of the ratio between the flux of ions and the flux of neutral carbon atoms, as well as the corrosion current density, obtained during several series of tests.
- FIG.8 is an observation of a section made by electron microscopy by electronic scanning of a substrate treated according to the method of the invention.
- FIG.9 is a graph illustrating the evolution of the corrosion current density of layers of carbon-based material deposited on substrates as a function of time, obtained during several series of tests.
- FIG.10 is a graph illustrating the oxygen content (measured by nuclear reaction analysis, or "NRA” according to the acronym for “nuclear reaction analysis” in English) of layers of carbon-based material obtained during several tests, deposited on substrates according to the ratio between the flux of ions and the flux of neutral carbon atoms.
- FIG.11 is a photograph of a monopolar plate.
- FIG.12 is a partial representation of a section of such a plate.
- the installation (1) used to implement a preferred embodiment of the method comprises a secondary vacuum enclosure (10), provided with a pumping system (20), a conventional (balanced or unbalanced) magnetron sputtering source (30), a plasma source (40) complementary generating a plasma (P) of gaseous ions, and a substrate holder (50) on which are mounted the substrate or substrates (S) to be treated.
- the pumping system (20) makes it possible to obtain a secondary vacuum in the enclosure (10), that is to say a pressure of the order of magnitude between 10 -8 mbar and 10' 3 mbar .
- the pumping system (20), or another independent system, is capable of introducing a gas (rare gas) into the vacuum enclosure (10).
- the gas is intended to be ionized, it is preferably argon.
- the magnetron sputtering source (30) is a conventional magnetron (30), fed continuously.
- the flux ions (cpi) are generated by a plasma source (40) complementary to the magnetron cathode (30).
- the plasma source (40) is of any suitable type, but the plasma (P) is preferably generated by microwaves.
- flux ions are generated by the magnetron cathode (30), especially in cases where the magnetron is unbalanced.
- An unbalanced magnetron has an unbalanced magnetic structure, which allows some of the ions generated by the plasma from the cathode to be sent to the parts.
- the plasma source (40) is therefore optional and its presence depends on the type of magnetron sputtering implemented and the quantity of ions available to generate a sufficient flow of ions (cpi).
- the substrate holder (50) is biased, that is to say that a voltage or negative potential difference is applied to its terminals, in order to accelerate the gaseous ions of the plasma and thus create a flow of ions (cpi) in the direction of the substrate carrier (50).
- This acceleration of the gaseous ions occurs in the vicinity of the substrates (S), since the electric field which results from the polarization of the parts extends over a short distance, of the order of 1 mm to 3 mm.
- ions are attracted to the target made of material (M) of the magnetron, in order to sputter it and emit the atoms which form the deposit on the substrate (S). It is not these ions in which the Applicant in the present invention. Indeed, it is the ions attracted to the substrate (S) where the deposit of material (M) grows which define the ionic assistance and which are important for the quality of the deposited layer.
- the ions consist of gaseous species such as argon preferably.
- the role of these ions is to bombard the deposit of material (M) growing on the substrate to compact it and eliminate the species that do not form sufficiently stable bonds with the atoms of the material. This makes it possible to increase the density of the growing layer of material (M), and to eliminate the oxygen in said growing layer of material (M). However, care must be taken not to eject the material (M) already placed on the substrate (S), so as not to slow down the deposition or degrade the quality of the deposition in progress.
- the plasma ions originating from the magnetron cathodes or from auxiliary plasma sources of the microwave plasma type are “slow”. They therefore have no power to compact a growing layer of material (M) or eliminate oxygen from this layer.
- a negative voltage is applied to the substrates (S) to be coated, which attracts and accelerates the positive ions towards said substrates (S).
- the bias voltage is between -35V and -100V, and preferably between -50V and -75V.
- the bias voltage is applied between the substrates (S) and the ground of the installation (1).
- a potential difference is established between the substrates (S) and the plasma (P). It is in this area of potential drop, over approximately 1 to 3 mm from the surface of the substrates (S), that the ions are accelerated.
- the kinetic energy of the ions is comparable to the potential difference between the plasma (P) and the substrates (S).
- the potential of the plasma is not known, but it is generally a few volts, for example +5V to +10V.
- the plasma potential (P) is assimilated to 0V when the voltage applied to the substrates (S) reaches a few tens of volts in absolute value.
- the polarization voltage is assimilated to the energy conferred to ions during deposition, by multiplying this bias voltage by the charge of an electron. Indeed, in the technical field considered, the ions are generally mono-charged.
- the substrate holder (50) is of the carriage type, that is to say it comprises a linear actuator for driving in translation and in an alternative manner a substrate ( S) in front of the magnetron (30) in order to receive material (M), then in a position (S') in front of the plasma source (40) so that the impacts of gaseous ions compact the layer of material (M) deposited.
- the installation is arranged lengthwise.
- the substrate holder (50) is of the carousel type, that is to say it comprises a plate (51) on which are arranged one or more substrates ( S), and this plate (51) is driven according to a rotation (r1).
- each substrate (S) scrolls alternately in front of a magnetron cathode sputtering station then in front of a plasma generation station (P)-
- magnetron cathodes (30) it is advantageous to arrange several magnetron cathodes (30) alternately with several plasma sources (40). In this way, the movement of the substrate (S) is continuous, and it moves alternately past a magnetron cathode sputtering station then past a plasma generation station (P). Adding magnetron cathodes (30) alternately with plasma sources (40) increases the productivity of the installation (1).
- the substrate holder (50) can be of any appropriate type depending on the substrates (S) to be treated or the construction of the installation (1), the latter also being able to be arranged vertically or horizontally or adapted in shape and dimensions.
- the lifetime of the deposited layer of material is evaluated by subjecting it to a corrosion test.
- the electrochemical tests are carried out in an acid solution with a pH equal to 3 (H2SO4), at 80° C. and with 0.1 ppm of fluoride ion. These parameters are defined by the DOE (Department Of Energy) in the United States of America to simulate the operating environment of a PEMFC.
- the potential is fixed at +0.8V on the working electrode on which the material to be tested is mounted, relative to the Ag/AgCl reference electrode.
- the addition of air bubbling makes it possible to simulate the cathode compartment of a fuel cell.
- the corrosion current is an image of the degradation rate of a part comprising a substrate (S) having received a layer of material (M). Indeed, the higher the corrosion current, the more the part is in the process of oxidizing, ie the layer of material (M) poorly fulfills its protective role. In practice, a corrosion current density of less than 300nA/cm 2 is considered acceptable after 24 hours at a potential of 0.8V.
- the surface conductivity of the coating is evaluated by measuring its interfacial contact resistance, or “RCI”.
- RCI interfacial contact resistance
- the measurement of the RCI is carried out on a stack composed of a block of Copper - Carbon Sheet (GDL, acronym for "Gas diffusion layer” in English) - Deposit on substrate - Nickel paint (rear face of the substrate) - Copper block, on which is applied a current of 100 mA for a surface of 1 cm 2 , then the resistance of the assembly is calculated from the measured voltage.
- GDL Copper - Carbon Sheet
- This stack is representative of the coated bipolar plate/GDL contact.
- a pressure of 138 N/cm 2 is applied thereto by a lever arm system with weights, this pressure being representative of that applied to an electrochemical cell during its assembly.
- the RCI is determined using equation (2).
- the RCI can be measured before or after a corrosion test, in which case the latter simulates accelerated aging of the treated parts.
- the principle of the NRA method is based on the study of nuclear reaction between the nuclei of a high-energy incident ion flux and the atoms of the target at rest.
- the sample is placed in the analysis chamber under a vacuum of 2E' 6 torr, ie 3 ⁇ 10 -9 bar, the zone to be studied being opposite the beam of incident particles.
- the latter consists of a flux of 2H+ ions with an energy equal to 930keV, and forms on the target an incident current of 250nA for an analysis surface of a few mm 2 .
- the back-scattered particles resulting from the 16O(d,p)17O type nuclear reaction are detected at 150° from the initial direction and after processing by the acquisition chain will form spectra.
- the detector is screened by a 10 ⁇ m thick sheet of mylar.
- the comparison with an alumina reference standard makes it possible to determine, for a given total integrated charge, the quantity of oxygen present in each sample. Knowing from the density of the material, the quantity of carbon present in the volume of material analyzed, the ratio between the atomic quantity of oxygen and carbon can then be obtained. [0102] Within the installation (1), several series of tests were carried out.
- the substrates (S) used are 316L stainless steel specimens intended to be coated on both sides, in order to simulate the coating of bipolar plates.
- the substrate (S) is positioned on an assembly, it is cleaned and blown to remove any contaminants and dust present on its surface. It is then introduced into a vacuum deposition installation (1).
- the pumping system (20) is activated so that the pressure in the enclosure (10) is less than 5x10 -9 bar, and the enclosure (10) is heated to eliminate the water absorbed on its walls.
- the surfaces of the substrate (S) to be coated are heated and bombarded to eliminate the water absorbed on the surfaces and strip the layer of chromium oxide present on the surface.
- the pumping system (20) then introduces argon into the enclosure (10) so that there prevails an argon pressure of 2.5 ⁇ 10′ 6 bar.
- the magnetron cathode (30) is supplied with a power of 3.2 kW in order to sputter a graphite carbon target, and a potential of -55V relative to the mass of the installation (1) is applied in pulsed mode to the substrate (S).
- the substrate (S) is thus coated for 5 minutes.
- an additional plasma source (40) is ignited in order to generate a sufficient flow of ions ((pi).
- the plasma source (40) is maintained at a power of 500 W (flux ratio of 2.7) , so that the current density on the substrate holder (50) reaches 2.5A/m 2.
- the rest of the deposition is carried out with alternating sputtering of the target on the magnetron cathode (30) and ion bombardment by the plasma source (40), over a total duration of 25min.
- a first series of preliminary tests is carried out by modifying:
- the compliance of the tests is assessed by measuring the RCI and by the corrosion resistance of the layers deposited.
- the flux (cpn) of neutral carbon atoms received by the substrate is determined from the rate of deposition of the layer in question, expressed in cm/s, multiplied by the density of the layer. of carbon (2.1 g-crrr 3 ), divided by the molar mass of carbon (12 g/mole) and then multiplied by Avogadro's number, which gives a number of carbon atoms per cm 2 and per s.
- the density of the deposited carbon was verified by electron energy loss spectroscopy, in order to validate that the carbon density data available in the literature did indeed correspond to the deposited carbon.
- the calculation of the flow (cpn) of neutral carbon atoms is an average: by dividing the thickness of the deposit by the duration of deposition, an average deposition rate is determined, despite the fact that the deposit is formed only during the passage of the substrates (S) in front of the magnetron cathode (30). However, there is indeed the entire surface of the substrates (S) which is coated for the total duration of the deposition, and it is therefore as if the entire surface permanently received the flow of neutral carbon atoms (cpn) thus calculated .
- the procedure is analogous for the calculation of the ion flux ((pi): the total polarization current in A is divided by the total polarized surface in cm 2 , which gives an average current density on the substrates (S) in A/cm 2. By dividing it by the elementary charge, one obtains a flux of ions per cm 2 and per s.
- the plasma (P) is located at the level of the plasma source (40) and the bombardment of the substrates (S) takes place close to the latter, the total current collected by the substrates (S) is the same as in the case where the entire surface constantly receives an average ion bombardment, therefore an average current density.
- the ratio between the flow of ions ((pi) and the flow (cpn) of neutral carbon atoms directed towards the substrate (S) is therefore unitless.
- the performance is obtained by validating the criteria of good corrosion resistance, good mechanical resistance, low RCI, and low oxygen content, of the deposited layer, as described in detail below. after in relation to figures 3 to 10.
- the corrosion current density is evaluated, in order to make a first selection from among the results obtained. It is recalled that the corrosion current density illustrates the corrosion resistance of the deposited layer: a low corrosion current indicates good corrosion resistance in the test medium.
- the corrosion current density is measured at the end of a 24-hour potentiostatic test at potential +0.8V/ref(Ag/AgCl).
- a layer of carbon-based material (M) with a thickness of 20 nm is not sufficient for the coated substrate (S) to have optimal properties: it is necessary that the layer of material (M) based on carbon is deposited according to the criteria defined by the invention, namely that the flux ratio (cpi)/(cpn) is adequate.
- Another means of evaluating the quality of the covering and of the protection provided by the deposit to the substrate is a corrosion test in a saline medium.
- the sample is immersed in a 35 g/L sodium chloride solution, similar to sea water, at room temperature for 3 hours.
- a potential is applied to the sample from the equilibrium potential E0 up to +0.8 V, then the potential decreases to -0.4 V before returning to E0 (versus Ag/AgCI reference) at a slew rate of 1 mV/s.
- the current is measured for 2 cycles.
- FIGS. 5 and 6 illustrate voltammetry graphs relating to the corrosion current density measured in a saline medium.
- the sample is immersed in a 35g/L NaCl solution (similar to seawater) at room temperature. Then the potential applied to the sample is cycled twice between -0.4V and 0.8V (versus an Ag/AgCI reference) and the current is measured.
- the three samples tested are 316L substrates (S) on which a layer of carbon-based material (M) measuring 100 nm thick has been deposited:
- the deposit of the second sample corresponds to the invention, with a flux ratio (cpi)/(cpn) of 2.3;
- the deposit of the third sample does not correspond to the invention, with a flux ratio (cpi)/(cpn) of 4.1.
- the second sample corresponding to the invention has a very low corrosion current
- the third sample presents a sudden increase in current when the potential exceeds 0.5V. This corresponds to pitting corrosion of stainless steel in an NaCl medium, a well-known phenomenon. At the end of the test, the stainless steel foil is pierced at several points.
- the first sample shows a rise in current, admittedly limited, but which also corresponds to pitting of the stainless steel;
- the second sample corresponding to the invention has a very low current, since the anode current is less than 1 pA/cm 2 .
- a substrate (S) coated with a metal sub-layer (SC) then a carbon layer can have good corrosion resistance, which can be explained in some cases by passivation of the material of the sub-layer. (SC) in case of degradation of the carbon layer.
- SC passivation of the material of the sub-layer.
- this passivated material is not sufficiently conductive on the surface, which means that a bipolar plate functionalized with such a deposit protects a fuel cell from accidental degradation, however the performance of this fuel cell would be lower (low efficiency due to high ohmic losses).
- the 20nm and 50nm carbon layers are completely consumed, and the substrate (S) or the metal sub-layer (SC) is exposed over almost the entire surface of the substrates (S);
- the tested surface retains a black appearance: a certain thickness of carbon deposit is still present on the surface, which makes it possible to preserve the good surface conduction properties of the coating with a low RCI.
- the maximum thickness of the carbon layer is limited by the cost of the treatment, linked to the necessary deposition time. [0142] The Applicant then took an interest in the structure and the chemical composition of conformal deposits.
- the carbon sub-layer (SC) in contact with the substrate (S) is about 17 nm thick;
- the dense carbon layer (M) deposited on the underlayer (SC) is about 98 nm thick;
- the total thickness of the deposit therefore measures approximately 115 nm thick.
- This test is an aging test similar to the test in FIG. 3, with the difference that in the present case the evolution of the current density is more specifically represented as a function of time.
- the first sample with carbon underlayer shows a corrosion current low, and especially that it decreases over time
- the second sample presents a slightly higher corrosion current, but above all which tends to increase over time. This result suggests that the lifetime of the second sample will be less than that of the first sample.
- a metal underlayer can be of interest depending on the type of substrate used:
- a metal sub-layer made of titanium makes it possible, in the event of degradation of the carbon-based material layer (M), to create a passivation layer which guarantees that the stainless steel of the substrate (S) will not emit metal cations into the electrochemical system;
- a metal underlayer also made of titanium can improve the adhesion of the coatings then deposited.
- NRA NRA
- the layer of carbon-based material (M) mainly comprises carbon, since the sputtered target is carbon-based.
- the residual oxygen level varies according to the flow ratio (cpi)/(cpn):
- oxygen is not driven out of the growing deposit layer.
- the residual oxygen content is therefore greater than or equal to approximately 1% at.
- a functionalized plate according to the invention therefore comprises within its functional layer an oxygen content of less than 1 at%, and preferably less than 0.7 at%, calculated as the number of oxygen atoms relative to the number of carbon atoms within said functional layer.
- the functional layer can also comprise argon from ion assistance (or another noble gas if a gas other than argon is used).
- FIG. 11 illustrates a monopolar plate (60) which is not functionalized, on which one can distinguish the channels for conveying the gases and for evacuating the Tl water vapor which have been shaped prior to the deposition of a functional layer.
- FIG 12 is a diagram illustrating a partial view of a section of such a bipolar plate (60).
- the thickness of the substrate (Es) is less than the thickness (Epb) of the bipolar plate (60).
- the thickness of the final plate (60) depends on the way in which it is shaped.
- the process does not require high temperature, which eliminates the potential risks for the adhesion or the diffusion of the material deposited as well as for the deformation of the plate;
- the plasma (P) of the ion assistance is not generated by microwaves. Indeed, it is not the power consumed by the plasma source (40) which is important but the quantity of ions available at the level substrates (S), hence the interpretation of the flow of ions ((pi) proposed by the Applicant. Other sources of ions can therefore be used.
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Abstract
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CA3230216A CA3230216A1 (fr) | 2021-08-31 | 2022-08-30 | Procede de depot de carbone sur un substrat |
CN202280072758.9A CN118176318A (zh) | 2021-08-31 | 2022-08-30 | 在基底上沉积碳的方法 |
JP2024513440A JP2024534195A (ja) | 2021-08-31 | 2022-08-30 | 基板上に炭素を堆積させるための方法 |
EP22773750.9A EP4377490A1 (fr) | 2021-08-31 | 2022-08-30 | Procede de depot de carbone sur un substrat |
KR1020247007028A KR20240046734A (ko) | 2021-08-31 | 2022-08-30 | 기재 상에 탄소를 증착하는 방법 |
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PCT/FR2022/051642 WO2023031558A1 (fr) | 2021-08-31 | 2022-08-31 | Piece revetue d'une couche a base de carbone |
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US (1) | US20240352571A1 (fr) |
EP (2) | EP4377490A1 (fr) |
JP (2) | JP2024534195A (fr) |
KR (2) | KR20240046734A (fr) |
CN (2) | CN118176318A (fr) |
CA (2) | CA3230216A1 (fr) |
FR (1) | FR3126428A1 (fr) |
WO (2) | WO2023031551A1 (fr) |
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US5346600A (en) * | 1992-08-14 | 1994-09-13 | Hughes Aircraft Company | Plasma-enhanced magnetron-sputtered deposition of materials |
EP0718417A1 (fr) * | 1994-12-20 | 1996-06-26 | Commissariat A L'energie Atomique | Matériau multicouche |
US20100285396A1 (en) * | 2006-08-17 | 2010-11-11 | Gm Global Technology Operations, Inc. | Non-noble metal inexpensive conductive coatings for fuel cell bipolar plates |
US20150037710A1 (en) * | 2012-02-24 | 2015-02-05 | Teer Coatings Limited | Coating with conductive and corrosion resistance characteristics |
WO2020019693A1 (fr) | 2018-07-23 | 2020-01-30 | 上海交通大学 | Revêtement de carbone microcristallin de graphite pour plaque bipolaire en métal de pile à combustible et son application |
EP3699315A1 (fr) * | 2019-02-21 | 2020-08-26 | Saft | Feuillard métallique pour électrode d'élément électrochimique comprenant un matériau à base de ti, c et h |
Family Cites Families (4)
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EP2020400B1 (fr) | 2006-05-22 | 2014-02-26 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Film de carbone amorphe, procédé de formation de film de carbone amorphe, organe conducteur pourvu d'un film de carbone amorphe et séparateur de pile à combustible |
DE112010004990B4 (de) | 2009-12-25 | 2020-01-16 | Toyota Jidosha Kabushiki Kaisha | Bipolarplatte für eine Brennstoffzelle und Verfahren zur Herstellung derselben |
JP5378552B2 (ja) | 2012-01-30 | 2013-12-25 | 株式会社豊田中央研究所 | 非晶質炭素膜、非晶質炭素膜の形成方法、非晶質炭素膜を備えた導電性部材および燃料電池用セパレータ |
US10135077B2 (en) * | 2015-02-12 | 2018-11-20 | Ford Global Technologies, Llc | Corrosion resistant metal bipolar plate for a PEMFC including a radical scavenger |
-
2021
- 2021-08-31 FR FR2109116A patent/FR3126428A1/fr active Pending
-
2022
- 2022-08-30 CA CA3230216A patent/CA3230216A1/fr active Pending
- 2022-08-30 EP EP22773750.9A patent/EP4377490A1/fr active Pending
- 2022-08-30 CN CN202280072758.9A patent/CN118176318A/zh active Pending
- 2022-08-30 WO PCT/FR2022/051631 patent/WO2023031551A1/fr active Application Filing
- 2022-08-30 KR KR1020247007028A patent/KR20240046734A/ko unknown
- 2022-08-30 JP JP2024513440A patent/JP2024534195A/ja active Pending
- 2022-08-31 CN CN202280072759.3A patent/CN118176317A/zh active Pending
- 2022-08-31 KR KR1020247007027A patent/KR20240049291A/ko unknown
- 2022-08-31 US US18/686,079 patent/US20240352571A1/en active Pending
- 2022-08-31 WO PCT/FR2022/051642 patent/WO2023031558A1/fr active Application Filing
- 2022-08-31 EP EP22773759.0A patent/EP4377489A1/fr active Pending
- 2022-08-31 JP JP2024513438A patent/JP2024530524A/ja active Pending
- 2022-08-31 CA CA3230215A patent/CA3230215A1/fr active Pending
Patent Citations (7)
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US5346600A (en) * | 1992-08-14 | 1994-09-13 | Hughes Aircraft Company | Plasma-enhanced magnetron-sputtered deposition of materials |
EP0718417A1 (fr) * | 1994-12-20 | 1996-06-26 | Commissariat A L'energie Atomique | Matériau multicouche |
US20100285396A1 (en) * | 2006-08-17 | 2010-11-11 | Gm Global Technology Operations, Inc. | Non-noble metal inexpensive conductive coatings for fuel cell bipolar plates |
US20150037710A1 (en) * | 2012-02-24 | 2015-02-05 | Teer Coatings Limited | Coating with conductive and corrosion resistance characteristics |
WO2020019693A1 (fr) | 2018-07-23 | 2020-01-30 | 上海交通大学 | Revêtement de carbone microcristallin de graphite pour plaque bipolaire en métal de pile à combustible et son application |
US20210036336A1 (en) * | 2018-07-23 | 2021-02-04 | Shanghai Jiao Tong University | Graphite micro-crystalline carbon coating for metal bipolar plates of fuel cells and application thereof |
EP3699315A1 (fr) * | 2019-02-21 | 2020-08-26 | Saft | Feuillard métallique pour électrode d'élément électrochimique comprenant un matériau à base de ti, c et h |
Non-Patent Citations (1)
Title |
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BI FEIFEI ET AL: "Mechanisms of growth, properties and degradation of amorphous carbon films by closed field unbalanced magnetron sputtering on stainless steel bipolar plates for PEMFCs", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM , NL, vol. 422, 12 June 2017 (2017-06-12), pages 921 - 931, XP085170303, ISSN: 0169-4332, DOI: 10.1016/J.APSUSC.2017.06.122 * |
Also Published As
Publication number | Publication date |
---|---|
EP4377489A1 (fr) | 2024-06-05 |
US20240352571A1 (en) | 2024-10-24 |
KR20240049291A (ko) | 2024-04-16 |
EP4377490A1 (fr) | 2024-06-05 |
WO2023031558A1 (fr) | 2023-03-09 |
JP2024534195A (ja) | 2024-09-18 |
FR3126428A1 (fr) | 2023-03-03 |
CN118176317A (zh) | 2024-06-11 |
CN118176318A (zh) | 2024-06-11 |
CA3230215A1 (fr) | 2023-03-09 |
CA3230216A1 (fr) | 2023-03-09 |
KR20240046734A (ko) | 2024-04-09 |
JP2024530524A (ja) | 2024-08-21 |
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