WO2023020454A1

WO2023020454A1 - Semiconductor chamber and semiconductor process device

Info

Publication number: WO2023020454A1
Application number: PCT/CN2022/112665
Authority: WO
Inventors: 胡云龙
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2021-08-18
Filing date: 2022-08-16
Publication date: 2023-02-23
Also published as: CN115938972A; TWI822251B; TW202310134A

Abstract

Disclosed in the present invention are a semiconductor chamber and a semiconductor process device. The semiconductor chamber comprises a first chamber body, an isolation valve, temperature control assemblies, a first bearing portion, and a second bearing portion, wherein the isolation valve is arranged in the first chamber body, the isolation valve separates an inner cavity of the first chamber body to form at least two process cavities, the first chamber body is provided with a wafer transport port, and the wafer transport port is in communication with one of the at least two process cavities; each process cavity is internally provided with the temperature control assembly, and the temperature control effects of the two temperature control assemblies in two adjacent process cavities are different; and the first bearing portion and the second bearing portion are respectively located in two adjacent process cavities, and under the condition that the isolation valve between the two adjacent process cavities is switched on, the first bearing portion can move into the process cavity where the second bearing portion is located, and a wafer can be transferred between the first bearing portion and the second bearing portion. The above solution can solve the problem of the insufficient capacity of a semiconductor process device.

Description

Semiconductor chamber and semiconductor process equipment

technical field

The invention relates to the technical field of semiconductor chip manufacturing, in particular to a semiconductor chamber and semiconductor process equipment.

Background technique

In related technologies, semiconductor process equipment is provided with process chambers such as a heating chamber, a cooling chamber, and a CVD (Chemical Vapor Deposition, chemical vapor deposition) chamber.

In the process of wafer processing by semiconductor process equipment, after the wafer is processed in the CVD chamber, it needs to be transferred to the heating chamber for heat treatment. After the heating is completed, it is transferred to the cooling chamber for cooling, so as to perform an annealing process on the wafer. However, when there is no wafer being processed in the heating chamber or the cooling chamber, the wafer can be transferred into the heating chamber or the cooling chamber. When wafers are being processed in the heating chamber or cooling chamber, the wafers in the previous process need to wait for the wafers in the process chamber of the next process to be processed before they can be transported, which will cause the entire processing time of the wafers to be lengthened , Seriously affecting the production capacity of semiconductor process equipment.

Contents of the invention

The invention discloses a semiconductor chamber and semiconductor process equipment to solve the problem of insufficient production capacity of the semiconductor process equipment.

In order to solve the above problems, the present invention adopts the following technical solutions:

A semiconductor chamber comprising:

The first chamber body and the isolation valve, the isolation valve is arranged in the first chamber body, the isolation valve separates the inner cavity of the first chamber body to form at least two process chambers, the first The chamber body is provided with a wafer transfer port, and the wafer transfer port communicates with one of the at least two process chambers;

A temperature control component, each of the process chambers is provided with the temperature control component, and the temperature control effects of the two temperature control components in two adjacent process chambers are different;

The first bearing part and the second bearing part, the first bearing part and the second bearing part are located in two adjacent process chambers respectively, and all the process chambers between the two adjacent process chambers When the isolation valve is opened, the first carrying part can move into the process chamber where the second carrying part is located, and can place the wafer between the first carrying part and the second carrying part. Reprinted between departments.

A semiconductor process equipment, comprising a first process chamber and a second process chamber, the first process chamber is the above-mentioned semiconductor chamber, the number of the first process chamber and the second process chamber All are multiple, the multiple first process chambers and the multiple second process chambers are distributed at intervals, and the wafers in each of the first process chambers can be transferred to the idle second process chambers indoor.

The technical scheme adopted in the present invention can achieve the following beneficial effects:

In the semiconductor chamber disclosed by the present invention, the inner cavity of the first chamber body is separated into at least two process chambers through an isolation valve, each process chamber is provided with a temperature control component, and the control chambers in the two adjacent process chambers The temperature control effects of the temperature components are different, that is to say, a semiconductor chamber can be compatible with at least two process chambers with different temperature control effects, such as heating or cooling respectively. That is, a semiconductor chamber can be compatible with at least two different processes, so the semiconductor process equipment increases the number of process chambers for different processes without changing the total number of process chambers, thereby improving the semiconductor process equipment. production capacity.

Description of drawings

The accompanying drawings described here are used to provide a further understanding of the present invention, and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute improper limitations to the present invention. In the attached picture:

FIG. 1 is a schematic structural diagram of semiconductor process equipment;

FIG. 2 is a schematic structural diagram of a semiconductor chamber disclosed in an embodiment of the present invention;

3 is a top view of a semiconductor chamber disclosed in an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of the semiconductor chamber disclosed by an embodiment of the present invention when the telescopic portion of the second bearing portion shrinks;

FIG. 5 is a schematic structural view of the second carrying portion of the semiconductor chamber disclosed by an embodiment of the present invention when the telescopic portion is extended.

Explanation of reference signs:

110-first chamber body, 111-process chamber, 112-cavity body, 1121-through hole, 1122-assembly gap, 120-second chamber body,

200-isolation valve,

300-temperature control components,

410-first bearing part, 420-second bearing part, 421-fixed part, 422-telescopic part,

510-first air extraction pipeline, 511-first valve, 520-second air extraction pipeline, 521-second valve,

610-process gas pipeline, 620-pipeline valve,

700-wafer.

Detailed ways

In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

The technical solutions disclosed by various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

In related technologies, taking a CVD (chemical vapor deposition, chemical vapor deposition) process as an example, semiconductor process equipment includes a plurality of process chambers (including, for example, a CVD chamber, a heating chamber, and a cooling chamber) and a transfer chamber. As shown in Figure 1, there are 6 process chambers surrounding the transfer chamber, namely chamber No. 1 to chamber No. 6. Among them, chamber No. 1 is a heating chamber and chamber No. 2 is a cooling chamber. Chambers, chambers 3 to 6 are all CVD chambers.

In the specific process, the wafers processed in chambers 3 to 6 need to be transferred to chamber 1 for heating, and then transferred to chamber 2 for cooling, so as to perform an annealing process on the wafers to improve the performance of the wafers.

For example, when the wafers in chamber No. 3 are transferred to chamber No. 1 for processing, the wafers in chamber No. 4 to chamber No. 6 need to wait for chamber No. 1 to be free before being transferred to chamber No. 1 in turn. This causes the processing time of the entire wafer to be lengthened, seriously affecting the productivity of semiconductor process equipment.

Moreover, due to the limitation of the space around the transfer chamber, the number of process chambers that can communicate with the transfer chamber in the semiconductor process equipment has been determined. When the total number of process chambers remains unchanged, one or more The number of process chambers will inevitably reduce the number of one or more process chambers. For example, when increasing the number of heating chambers and cooling chambers, the number of CVD chambers will decrease. Therefore, this increase of one or more Several modes of the number of chambers cannot solve the problem of insufficient production capacity of semiconductor process equipment. In the related art, the number of process chambers that can communicate with the transmission chamber in the semiconductor process equipment has been determined, so when the total number of process chambers remains unchanged, increasing the number of one or several process chambers will inevitably increase the number of process chambers. The number of other one or several process chambers is reduced. Therefore, the problem of insufficient production capacity of semiconductor process equipment cannot be solved by increasing the number of one or several process chambers.

In order to solve the above problems, as shown in FIGS. 2 to 5 , an embodiment of the present invention discloses a semiconductor chamber. The disclosed semiconductor chamber includes a first chamber body 110 , an isolation valve 200 , a temperature control component 300 , a first The bearing part 410 and the second bearing part 420 .

The isolation valve 200 is disposed in the first chamber body 110 , and the isolation valve 200 separates the inner cavity of the first chamber body 110 to form at least two process chambers 111 . Specifically, at least two process chambers 111 are distributed at intervals along the height direction of the first chamber body 110 . The first chamber body 110 is provided with a wafer transfer port, and the wafer transfer port communicates with one process chamber 111 of the at least two process chambers 111 .

Optionally, in order to further avoid temperature interference between the two process chambers 111, the material of the isolation valve 200 is preferably selected with poor thermal conductivity, for example, a smooth stainless steel valve can be selected.

Each process chamber 111 is provided with a temperature control assembly 300 , and the temperature control effects of the two temperature control assemblies 300 in two adjacent process chambers 111 are different. Such a design can realize that a single semiconductor chamber can be compatible with at least two process chambers 111 with different temperatures.

Specifically, in two adjacent process chambers 111, the temperature control component 300 in one of the process chambers 111 can realize the heating function, and the temperature control component 300 in the other process chamber 111 can realize the cooling function, that is to say, the One of the two adjacent process chambers 111 may be a heating chamber, and the other may be a cooling chamber. Of course, the embodiment of the present invention is not limited thereto. In practical applications, two adjacent process chambers 111 can also be heating chambers, but the heating effects of the two are different to meet different process requirements; The two adjacent process chambers 111 can also be cooling chambers, but the cooling effects of the two are different to meet different process requirements.

The first bearing part 410 and the second bearing part 420 are respectively located in two adjacent process chambers 111, and when the isolation valve 200 between the two adjacent process chambers 111 is opened, the first bearing part 410 can move to the process chamber 111 where the second carrier 420 is located, and transfer the wafer 700 between the first carrier 410 and the second carrier 420 .

In a specific process, in two adjacent process chambers 111, the temperature control assembly 300 in one of the process chambers 111 can be a heater, and the temperature control assembly 300 in the other process chamber 111 can be a cooler, so that Realize cooling and heating functions. The process chamber 111 where the first bearing part 410 is located may be a heating chamber, and the chamber where the second bearing part 420 is located may be a cooling chamber. When performing the process, the wafer 700 is first transferred to the first carrier part 410, and after heating in the process chamber 111 where the first carrier part 410 is located, the isolation valve 200 is opened, and the first carrier part 410 transfers the wafer 700 to the second carrier part 410. In the process chamber 111 where the carrier part 420 is located, and transferred to the second carrier part 420, however, the first carrier part 410 returns to the process chamber 111 where it is located, and the isolation valve 200 is closed, and the wafer 700 is placed on the second carrier part 420 Cooling is carried out in the process chamber 111 where it is located. After the cooling is completed, the isolation valve 200 is opened, and the first carrier 410 moves again into the process chamber 111 where the second carrier 420 is located, and the second carrier 420 transfers the wafer 700 to the first carrier 410, and the first carrier 410 The wafer 700 is carried to the process chamber 111 where it is located, and then the wafer 700 is transported out of the semiconductor chamber, thereby completing the annealing process of the wafer 700 .

Of course, after the cooling process is completed, the wafer 700 can also be directly transported out of the semiconductor chamber in the cooling chamber, which is not limited herein.

In the embodiments disclosed in the present application, one semiconductor chamber can be compatible with at least two different processes, so the semiconductor process equipment increases the number of process chambers 111 for different processes without changing the total number of process chambers, and can Increased capacity of semiconductor process equipment.

The semiconductor chamber disclosed in the present application can replace the No. 1 chamber and the No. 2 chamber in the related art, and the replaced No. 1 chamber and No. 2 chamber can both complete the heating and cooling processes. Therefore, when the No. 1 chamber When processing, the wafer 700 in No. 3 to No. 6 chambers can be transferred to No. 2 chamber without waiting for No. 1 chamber to be free, so without increasing the total number of process chambers of the semiconductor process equipment, it increases The number of process chambers 111 can increase the productivity of semiconductor process equipment.

In addition, chamber No. 1 and chamber No. 2 in the related art also need to use manipulators for transport, while the semiconductor chamber in this application does not need to Robot transfer, thus simplifying the structure of semiconductor process equipment, while shortening the scheduling time and transfer time during the transfer process.

In another optional embodiment, the semiconductor chamber disclosed in the present application may also include at least two first gas extraction pipelines 510, and one end of each first gas extraction pipeline 510 may be in one-to-one correspondence with each process chamber 111 The other end of each first pumping pipeline 510 is used to communicate with the vacuum controller. The first pumping pipeline 510 can be provided with a first valve 511, and the first valve 511 controls the connection or disconnection between the vacuum pump and the process chamber 111. open. At this time, when the process chamber 111 needs to be evacuated, the first valve 511 can be opened, and the first pumping pipeline 510 is connected with the process chamber 111, so that the corresponding process chamber 111 is evacuated, so that the corresponding process chamber 111 is Vacuum state.

In this solution, the semiconductor chamber is in a vacuum state during the transfer of the wafer 700, so it can be connected to the vacuum controller through the first pumping pipeline 510 and the first valve 511, so as to facilitate the vacuuming process of the process chamber 111.

In the above embodiment, each process chamber 111 corresponds to a first pumping pipeline 510, and the first pumping pipeline 510 is correspondingly provided with a first valve 511, so opening the first valve 511 corresponding to each process chamber 111 can The corresponding process chamber 111 is evacuated.

In the above embodiments, the semiconductor chamber may include a vacuum controller, of course, the vacuum controller may also be included in the semiconductor process equipment for vacuuming the entire semiconductor process equipment.

In the above embodiment, due to the poor thermal conductivity of the wafer 700 in a vacuum environment, in another optional embodiment, the semiconductor chamber disclosed in the present application may further include at least two process gas pipelines 610 , one end of each process gas pipeline 610 may communicate with each process chamber 111 one by one, and the other end of each process gas pipeline 610 is used to communicate with a process gas source. The process gas pipeline 610 may be provided with a pipeline valve 620 , and the pipeline valve 620 controls the connection or disconnection of the process gas source with the corresponding process chamber 111 .

In this solution, when the process chamber 111 is performing a process, the corresponding pipeline valve 620 can be opened first to ventilate the process chamber 111, so that the process chamber 111 is in an atmospheric state, and then the heating or cooling process is performed, thereby improving the heat conduction of the wafer 700 or cooling rate.

The process gas in the above embodiments may be process gases such as nitrogen, argon, and of course other process gases, which are not limited herein.

In the above embodiment, the temperatures between two adjacent process chambers 111 are likely to affect each other, therefore, in another optional embodiment, the first chamber body 110 may include at least two chamber parts 112, The inside of the cavity part 112 constitutes the process cavity 111, and the cavity part 112 can be provided with a through hole 1121, the through holes 1121 of the two adjacent cavity parts 112 are arranged oppositely, between the adjacent two cavity parts 112 There may be an assembly gap 1122, that is, there is a certain distance between two adjacent cavity parts 112, and there is no direct contact. The isolation valve 200 can be located in the assembly gap 1122 and between the two opposite through holes 1121. At this time, the isolation valve 200 is disposed in the assembly gap 1122 , and the two through holes 1121 are communicated or isolated through the isolation valve 200 .

In this scheme, there is a certain distance between two adjacent cavity parts 112, and there is no direct contact, so the temperature of one cavity part 112 is not easily transferred to the other cavity part 112, so that the adjacent two cavity parts 112 The temperature among the process chambers 111 is not easy to affect each other, which improves the reliability and safety of the semiconductor chamber.

Further, the semiconductor chamber disclosed in the present application may also include a second chamber body 120 and a second pumping pipeline 520, the first chamber body 110 may be located in the second chamber body 120, and the first chamber body 110 The second chamber body 120 is spaced apart from the second chamber body 120 , and the inner cavity of the second chamber body 120 can be communicated with one end of the second pumping pipeline 520 . The other end of the second exhaust pipeline 520 is used to communicate with the vacuum controller. The second exhaust pipeline 520 can be provided with a second valve 521. The second valve 521 can control the vacuum controller and the inner cavity of the second chamber body 120. cavities connected or disconnected.

In this solution, the second chamber body 120 can surround the first chamber body 110 in its inner cavity, and at the same time, preferably, a plurality of supports (not shown) are arranged between the bottom walls of the two, The support can provide support for the first chamber body 110. Preferably, the contact area between the support and the first chamber body 110 and the second chamber body 120 is as small as possible, and it is made of a non-thermally conductive material, thereby reducing Temperature conduction between the first chamber body and the second chamber body 120 . The design of the second chamber body can prevent damage to the first chamber body 110 and improve the safety of the semiconductor chamber. At the same time, the temperature of the two process chambers 111 can be further avoided by adjusting the vacuum degree in the inner cavity of the second chamber body. interference.

Specifically, the inner cavity of the second chamber body 120 can be evacuated through the second pumping pipeline 520, so that the inner cavity of the second chamber body 120 is in a vacuum state, so that the two adjacent cavities can be lowered. The heat transfer performance between the parts 112 is improved, thus further reducing the temperature influence between two adjacent process chambers 111 .

In another optional embodiment, the second carrier part 420 may include a plurality of sub-carrier parts, and the plurality of sub-carrier parts may be evenly arranged in the circumferential direction of the inner wall of the corresponding process chamber 111 to form a carrier surface for carrying the wafer 700 . In this solution, the second carrying portion 420 can be evenly carried in the circumferential direction of the wafer 700, so that the force on the wafer 700 is uniform, and it is not easy to tilt, thereby improving the stability of the carrying of the wafer 700.

In the above embodiment, when the first carrying portion 410 and the second carrying portion 420 transfer the wafer 700 , the second carrying portion 420 easily interferes with the wafer 700 , so that the wafer 700 falls during the transfer.

Further, in another optional embodiment, each sub-carrying part may include a fixed part 421 and a telescopic part 422, wherein the fixed part 421 is detachably connected to the inner wall of the corresponding process chamber 111, and the telescopic part 422 is connected to the fixed The fixed part 421 is connected, and can move telescopically along the fixed part 421, so as to be able to support the edge area of the wafer 700 when extending, and avoid the wafer 700 when retracting. In this solution, the telescopic part 422 can be extended or shortened. When the first carrier part 410 is required to transfer the wafer 700 to the second carrier part 420, the telescopic part 422 is shortened, and the first carrier part 410 transports the wafer 700 to a position higher than the second carrier part 410. The position of the carrier part 420, after that, stretch the telescopic part 422 again, and a part of the telescopic part 422 stretches into the lower position of the wafer 700, and the first carrier part 410 is in the process of falling, and the wafer 700 is transferred to the telescopic part 422, thereby The transfer of the wafer 700 is completed. When the second carrying part 420 is required to transfer the wafer 700 to the first carrying part 410, the first carrying part 410 lifts up the wafer 700 while the first carrying part 410 is rising, the telescopic part 422 shortens, and the first carrying part 410 falls. Due to the shortening of the telescopic part 422 , the telescopic part 422 will not interfere with the wafer 700 .

In this solution, the telescopic part 422 can be stretched and contracted, so that it is not easy to interfere with the wafer 700 and the first carrying part 410 , thereby improving the reliability and safety of the wafer 700 transport.

Optionally, the telescopic part 422 may be a hydraulic cylinder or a pneumatic cylinder. Of course, the telescopic part 422 may also have other structures, which are not limited herein.

In the above embodiments, the fixing part 421 is detachably connected to the inner wall of the process chamber 111, so as to facilitate the replacement of the sub-carrying part, thereby improving the maintainability of the semiconductor chamber. The fixing part 421 and the inner wall of the process chamber 111 can be connected by screw threads, clamping, etc., of course, can also be connected in other ways, which are not limited herein.

Optionally, the first carrier part 410 may include a plurality of ejector pins distributed at intervals along the circumference of the process chamber 111, and the plurality of ejector pins jointly lift up the wafer 700 and make it rise to a position higher than the height of the second carrier part 420. place. Of course, in practical applications, the first carrier part 410 can also adopt any other structure, as long as it can move into the process chamber 111 where the second carrier part 420 is located, and the wafer 700 can be placed between the first carrier part 410 and the second carrier part. Reprinted between 420.

In the above embodiment, when the first carrier part 410 transports the wafer 700 to the adjacent process chamber 111 , the first carrier part 410 is likely to collide with the isolation valve 200 during transportation. For this reason, in another optional embodiment, the semiconductor chamber disclosed in the present application may further include a detection element and a control element, and the detection element and the control element may be connected in a controllable manner. The detection element can be arranged in the process chamber 111 where the first bearing part 410 is located. The detection element is used to detect the distance between the first bearing part 410 and the isolation valve 200. At this time, the detection element is used to detect that the first bearing part 410 is in its corresponding The distance between the process chamber 111 and the isolation valve 200 , that is, the distance between the first carrying part 410 in the non-transported state or the transport back to its corresponding process chamber 111 and the isolation valve 200 .

When the distance between the first bearing part 410 and the isolation valve 200 is greater than or equal to the preset safety switch distance, the control element controls the isolation valve 200 to open or close.

In a specific process engineering, when the first carrier part 410 is transporting the wafer 700 to the adjacent process chamber 111, and the first carrier part 410 moves to less than the preset safety switch distance, the isolation valve 200 has been opened, thereby Collision between the first carrying part 410 or the wafer 700 and the isolation valve 200 is avoided.

When the first carrier 410 returns to the process chamber 111 where it is located, and the first carrier 410 moves to a distance greater than or equal to the preset safety switch distance, the isolation valve 200 can be closed to prevent the first carrier 410 or the wafer from 700 collides with isolation valve 200 .

This solution can improve the safety performance of the semiconductor chamber, and prevent the first carrying part 410 or the wafer 700 from colliding with the isolation valve 200.

Optionally, the preset safety switch distance can be the distance between the bearing surface of the first bearing part 410 and the bottom surface of the isolation valve 200, and the distance can be 5mm, and of course, can also be other values, which are not limited herein.

In another optional embodiment, the first bearing part 410 moves to the position of the highest point in the adjacent process chamber 111 and may be lower than the top of the process chamber 111 by more than 2 mm, thereby preventing the first bearing part 410 from colliding with the process chamber. The top of the 111 collided.

In another optional embodiment, the isolation valve 200 can be a pneumatically controlled valve, and the semiconductor chamber disclosed in the present application can also include a vent line, and the vent line can be connected with the isolation valve 200. By controlling the vent line Vent or cut off to control the opening or closing of the isolation valve 200 . In this solution, the opening or closing of the isolation valve 200 is controlled by opening or closing the ventilation pipeline, thereby simplifying the opening or closing process of the isolation valve 200 .

In the above-mentioned embodiment, when the semiconductor chamber is powered off, the ventilation in the ventilation pipeline is stopped, thereby causing the isolation valve 200 to be closed by mistake, and the isolation valve 200 may collide with the first bearing part 410 easily.

Based on this, in another optional embodiment, the gas pipeline may include a first ventilation pipeline and a second ventilation pipeline, and both the first ventilation pipeline and the second ventilation pipeline may communicate with the isolation valve 200 .

When the ventilation of the first ventilation pipeline is controlled and the ventilation of the second ventilation pipeline is cut off, the isolation valve 200 is opened.

In the case of controlling the opening and closing of the first ventilation pipeline and the ventilation of the second ventilation pipeline, the isolation valve 200 is closed.

In this solution, the opening and closing of the valves are controlled by two ventilation lines, and the isolation valve 200 is only opened when the first ventilation line is ventilated and the second ventilation line is cut off. The isolation valve 200 is only closed when the first ventilation pipeline is cut off and the second ventilation pipeline is ventilated. Therefore, when the first ventilation pipeline and the second ventilation pipeline are not ventilated or both are ventilated, the state of the isolation valve 200 is both. Therefore, it is avoided that the isolation valve 200 is accidentally opened or closed due to misoperation, and the isolation valve 200 is prevented from colliding with the first bearing part 410, thereby damaging the isolation valve 200 or the first bearing part 410, so as to improve the performance of the semiconductor chamber. security.

In another optional embodiment, when the first carrying part 410 transports the wafer 700 to the adjacent process chamber 111, when the distance between the first carrying part 410 and the isolation valve 200 is greater than or equal to the preset safety In the case of the switch distance, the first ventilation pipeline is ventilated, and the second ventilation pipeline is cut off, so that the isolation valve 200 is opened, and the isolation valve 200 remains open after opening.

When the first bearing part 410 returns to the process chamber 111 where it is located, and the first bearing part 410 moves to a distance greater than or equal to the preset safety switch, the first ventilation pipeline is cut off, and the second ventilation pipeline is ventilated, so that The isolation valve 200 is closed, and the isolation valve 200 remains closed after being closed.

Based on the semiconductor chamber of any one of the above-mentioned embodiments of the present invention, the embodiment of the present invention also discloses a semiconductor process equipment, and the disclosed semiconductor manufacturing equipment has the semiconductor chamber of any of the above-mentioned embodiments.

The semiconductor process equipment includes a first process chamber and a second process chamber, and the first process chamber may be the semiconductor chamber of any one of the above-mentioned embodiments. The number of the first process chamber and the second process chamber is multiple, and the multiple first process chambers and the multiple second process chambers are distributed at intervals, and the wafer 700 in each first process chamber can be transferred to an idle in the second process chamber.

Specifically, the first process chamber is used for annealing the wafer 700, and the second process chamber may be a CVD chamber, an etching chamber, and other process chambers. The first process chamber and the second process chamber in the semiconductor process equipment disclosed in this application can also adopt the layout shown in Figure 1, and the No. 1 chamber and No. 2 chamber can be replaced by the semiconductor chamber disclosed in this application. Chambers, chambers 3 to 6 are a plurality of second process chambers. For example, the wafer processed in No. 3 chamber can be put into No. 1 chamber, the wafer 700 processed in No. 4 chamber can be transferred into No. 2 chamber, and the wafer 700 in No. 5 chamber and No. 6 chamber waits for 1 After Chamber No. 2 and Chamber No. 2 are free, they can be transferred.

In the embodiments disclosed in the present application, the semiconductor chamber can be compatible with at least two different processes, so the semiconductor process equipment can increase the number of process chambers without changing the total number of process chambers, and can improve the production capacity of the semiconductor process equipment .

It should be noted that the layout of the semiconductor process equipment in the related art and the layout of the chambers disclosed in this application may be the same, but the structures of the No. 1 chamber and the No. 2 chamber are different.

The above-mentioned embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments do not contradict each other, they can be combined to form a better embodiment. Considering the brevity of the text, here No longer.

The above descriptions are only examples of the present invention, and are not intended to limit the present invention. Various modifications and variations of the present invention will occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the scope of the claims of the present invention.

Claims

A semiconductor chamber, characterized in that it comprises:

The first chamber body and the isolation valve, the isolation valve is arranged in the first chamber body, the isolation valve separates the inner cavity of the first chamber body to form at least two process chambers, the first The chamber body is provided with a wafer transfer port, and the wafer transfer port communicates with one of the at least two process chambers;

A temperature control component, each of the process chambers is provided with the temperature control component, and the temperature control effects of the two temperature control components in two adjacent process chambers are different;

The first bearing part and the second bearing part, the first bearing part and the second bearing part are located in two adjacent process chambers respectively, and all the process chambers between the two adjacent process chambers When the isolation valve is opened, the first carrying part can move into the process chamber where the second carrying part is located, and place the wafer between the first carrying part and the second carrying part Reprinted between.
The semiconductor chamber according to claim 1, wherein the second carrier includes a plurality of sub-carriers, and the plurality of sub-carriers are evenly arranged along the circumferential direction of the corresponding inner wall of the process chamber; each of the sub-carriers The carrying parts each include a fixed part and a telescopic part, wherein the fixed part is detachably connected to the corresponding inner wall of the process chamber, and the telescopic part is connected to the fixed part and can perform telescopic movement, so as to be able to Carries the edge region of the wafer while retracting and avoids the wafer when retracting.
The semiconductor chamber according to claim 1 or 2, wherein the first carrying portion includes a plurality of ejector pins distributed at intervals along the circumference of the process chamber, and the plurality of ejector pins can jointly lift up the wafer, and make it rise to a position higher than the height of the second carrying part.
The semiconductor chamber according to claim 1 or 2, characterized in that the semiconductor chamber further comprises at least two first gas extraction lines, and one end of each of the first gas extraction lines is in one-to-one correspondence with each of the first gas extraction lines. The process chamber is connected, the other end of each of the first pumping pipelines is used to communicate with the vacuum controller, the first pumping pipeline is provided with a first valve, and the first valve controls the vacuum controller It is connected or disconnected with the corresponding process chamber.
The semiconductor chamber according to claim 1 or 2, wherein the semiconductor chamber further comprises a second chamber body and a second pumping pipeline, the first chamber body is located in the second chamber The body and the two are arranged at intervals, the inner cavity of the second chamber body communicates with one end of the second exhaust pipeline, and the other end of the second exhaust pipeline is used to communicate with the vacuum controller, The second pumping line is provided with a second valve, and the second valve controls the connection or disconnection of the vacuum controller with the inner cavity of the second chamber body.
The semiconductor chamber according to claim 1 or 2, characterized in that, the semiconductor chamber further comprises at least two process gas pipelines, and one end of each of the process gas pipelines is in one-to-one correspondence with each of the process gas pipelines. The other end of each process gas pipeline is used to communicate with the process gas source, the process gas pipeline is provided with a pipeline valve, and the pipeline valve controls the process gas source and the corresponding The process chamber is connected or disconnected.
The semiconductor chamber according to claim 1 or 2, wherein the first chamber body comprises at least two cavity parts, the interior of the cavity parts constitutes the process chamber, and the cavity A through hole is opened in the part, the through holes of the two adjacent cavity parts are oppositely arranged, there is an assembly gap between the two adjacent cavity parts, and the isolation valve is located in the assembly gap , and located between the two opposite through holes.
The semiconductor chamber according to claim 1 or 2, wherein the semiconductor chamber further comprises a detection element and a control element, the detection element is connected to the control element, and the detection element is arranged on the In the process chamber where the first bearing part is located, the detection element is used to detect the distance between the first bearing part and the isolation valve;

When the distance between the first bearing part and the isolation valve is greater than or equal to the preset safety switch distance, the control element controls the isolation valve to open or close.
The semiconductor chamber according to claim 1 or 2, wherein the isolation valve is a pneumatically controlled valve, the semiconductor chamber includes a vent line, and the vent line communicates with the isolation valve, through Controlling the venting or shutting off of the venting pipeline, so as to control the opening or closing of the isolation valve.
The semiconductor chamber according to claim 9, wherein the ventilation pipeline comprises a first ventilation pipeline and a second ventilation pipeline, and both the first ventilation pipeline and the second ventilation pipeline are connected to The isolation valves are connected;

When the ventilation of the first ventilation pipeline is controlled and the ventilation of the second ventilation pipeline is cut off, the isolation valve is opened;

Under the condition that the first ventilation circuit is controlled to be cut off and the second ventilation circuit is ventilated, the isolation valve is closed.
A semiconductor process equipment, characterized in that it comprises a first process chamber and a second process chamber, the first process chamber is the semiconductor chamber according to any one of claims 1 to 10, and the second The number of a process chamber and the number of the second process chamber is multiple, the plurality of first process chambers and the plurality of second process chambers are distributed at intervals, and each of the first process chambers The wafers can be transferred to the idle second process chamber.