CN219793106U - Wafer metal coating system - Google Patents
Wafer metal coating system Download PDFInfo
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- CN219793106U CN219793106U CN202321358415.7U CN202321358415U CN219793106U CN 219793106 U CN219793106 U CN 219793106U CN 202321358415 U CN202321358415 U CN 202321358415U CN 219793106 U CN219793106 U CN 219793106U
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- pumping
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 93
- 239000002184 metal Substances 0.000 title claims abstract description 93
- 238000000576 coating method Methods 0.000 title claims abstract description 59
- 239000011248 coating agent Substances 0.000 title claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 87
- 238000001816 cooling Methods 0.000 claims abstract description 76
- 238000005086 pumping Methods 0.000 claims abstract description 42
- 238000005192 partition Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 21
- 239000007921 spray Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 210000000245 forearm Anatomy 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 183
- 238000000605 extraction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model discloses a wafer metal coating system, wherein a wafer pre-drawing device comprises a pre-drawing cavity, a left wafer lifting base, a right wafer lifting base, a left water cooling disc and a right water cooling disc; the pre-pumping cavity is divided into an upper cavity and a lower cavity by a transverse partition plate; the left water cooling disc is fixedly arranged at the left part of the bottom plate of the pre-drawing cavity, and the right water cooling disc is fixedly arranged at the right part of the bottom plate of the pre-drawing cavity; a water cooling pipe is arranged in the water cooling disc; the water inlet and the water outlet of the water cooling pipe are communicated with the outside of the pre-pumping cavity; the left wafer lifting base is arranged in the center of the left water cooling disc and can move up and down; the right wafer lifting base is arranged in the center of the right water cooling disc and can move up and down; the side wall of the lower cavity of the pre-pumping cavity is provided with a lower feed inlet. The utility model can quickly and naturally cool a pair of wafers which finish the metal coating process, reduce the waiting time of the high-temperature metal coating wafers in the wafer pre-pumping device and improve the wafer conveying efficiency of the wafer metal coating system.
Description
Technical Field
The utility model relates to a semiconductor manufacturing technology, in particular to a wafer metal coating system.
Background
In the process of metal coating the wafer, the process chambers of the metal coating process device are usually adjacent to each other to form a pair of chambers, and when the temperature of the chambers is higher than 150 ℃ in the high-temperature process, the temperature fields of the pair of chambers can be mutually influenced due to the connection or the close approach, so that the independent control of the temperature of the chambers is influenced; in addition, because the reaction temperature in the process chamber is greater than 400 ℃, the temperature of the wafer after exiting the chamber is high, such as the oxidation of the metal film caused by direct exposure to oxygen-containing environment, and the conventional process usually has wafers (wafer) naturally cooled in a carrier and then transferred to a cassette for transporting the wafers.
Chinese patent document CN210765501U discloses a wafer plating process device, wherein an upper cover is disposed at the upper part of the upper cavity for connecting and maintaining the internal structure of the upper cavity; the inner cavity is arranged in the upper cavity and is used for coating the surface of the wafer, one end of the inner cavity is provided with a spray plate, the process atmosphere can enter the inner cavity through the spray plate, heaters are distributed on the periphery of the inner cavity, and the heaters can provide a uniform temperature field according to the requirements of a coating process so as to ensure the quality of the film and the normal operation of the process; the wafer carrier enters the inner cavity after the wafer is loaded in the lower cavity, and moves downwards to enter the lower cavity after the film plating reaction is completed; and one side of the lower cavity is provided with a feed inlet, and the feed inlet is connected with an external transmission cavity through a rectangular valve to finish loading and unloading of wafers.
Chinese patent document CN 114823445A discloses a wafer pre-suction device, wherein at least one side of the case body is provided with a door opening for transferring a wafer into or out of the case body; at least one side of the box body is provided with an air suction or inflation interface which is used for connecting a molecular pump to suck or deflate the box body. According to the wafer pre-pumping device, the wafer conveying device for stacking a plurality of wafers is arranged in the cavity of the box body, and the base of the wafer conveying device is embedded into the concave installation part of the bottom plate of the box body, so that the temperature of the wafers is not reduced.
Disclosure of Invention
The utility model aims to solve the technical problems that a pair of wafers which finish the metal coating process can be cooled down quickly and naturally, the waiting time of the high-temperature metal coating wafers in a wafer pre-pumping device is reduced, and the wafer conveying efficiency of a wafer metal coating system is improved.
In order to solve the technical problems, the wafer metal coating system provided by the utility model comprises a wafer pre-pumping device 1;
the wafer pre-drawing device 1 comprises a pre-drawing cavity 11, a left wafer lifting base 12, a right wafer lifting base 13, a left water cooling disc 14 and a right water cooling disc 15;
the pre-pumping cavity 11 is divided into an upper cavity and a lower cavity by a transverse partition plate 18;
the left water-cooling disc 14 and the right water-cooling disc 15 are both arranged in the lower cavity, the left water-cooling disc 14 is fixedly arranged at the left part of the bottom plate of the pre-extraction cavity 11, and the right water-cooling disc 15 is fixedly arranged at the right part of the bottom plate of the pre-extraction cavity 11;
a water cooling pipe 16 is arranged in the left water cooling disk 14 and the right water cooling disk 15;
the water inlet and the water outlet of the water cooling pipe 16 are communicated with the outside of the pre-pumping cavity 11;
the left wafer lifting base 12 is arranged in the center of the left water cooling disc 14 and can move up and down;
the right wafer lifting base 13 is arranged in the center of the right water cooling disc 15 and can move up and down;
the side wall of the lower cavity of the pre-pumping cavity 11 is provided with a lower feed inlet for placing or taking out the wafer 9 into the lower cavity of the pre-pumping cavity 11.
Preferably, a base driving structure 17 is fixed on the lower side of the pre-suction cavity 11, and the base driving structure 17 is used for driving the left wafer lifting base 12 and the right wafer lifting base 13 to lift.
Preferably, at least one of the water inlet and the water outlet of the water cooling pipe 16 is communicated with the lower side of the bottom plate of the pre-pumping cavity 11.
Preferably, at least one of the water inlet and the water outlet of the water cooling pipe 16 is communicated to the outer side of the side wall of the pre-pumping cavity 11.
Preferably, a plurality of bumps 19 are uniformly formed on the upper surfaces of the left water-cooled disk 14 and the right water-cooled disk 15 of the wafer pre-suction device 1.
Preferably, the bump 19 is made of ceramic material.
Preferably, the water cooling pipes 16 arranged in the left water cooling disk 14 and the right water cooling disk 15 are spiral.
Preferably, a wafer supporting component 7 is disposed in the upper cavity of the pre-pumping cavity 11 of the wafer pre-pumping device 1;
each layer of the wafer supporting component 7 is provided with a pair of supporting bodies which are arranged left and right;
the distance from the center of the left support 71 to the center of the right support 72 is equal to the distance from the center of the left wafer lift base 12 to the center of the right wafer lift base 13;
the side wall of the upper cavity of the pre-pumping cavity 11 is provided with an upper feed inlet for placing or taking out the wafer 9 into the upper cavity of the pre-pumping cavity 11.
Preferably, the wafer metal coating system further comprises a metal coating process device 2;
the metal coating process device 2 has at least one pair of chambers 21;
placing a wafer to be coated in the chamber 21 for a metal coating process, and forming a metal film on the surface of the wafer;
the spacing d between the two chambers 21 of each pair is 5mm to 15mm.
Preferably, a thermal insulating material is provided between the two chambers 21 of each pair.
Preferably, the chamber 21 of the metal plating process device 2 is divided into an upper chamber 211 and a lower chamber 212;
a spray plate 213 is disposed in the upper chamber 211;
the shower plate 213 is used for injecting process gas into the upper chamber 211;
an exhaust ring groove 214 is formed on the periphery of the upper chamber 211;
the exhaust ring groove 214 is communicated with an exhaust hole 215 for exhausting the gas in the chamber 21 of the metal coating process device 2 to the outside of the chamber 21;
a wafer carrier 216 capable of moving up and down is disposed in the lower chamber 212;
the sidewall of the lower chamber 212 is provided with a coating feed port for inserting or removing the wafer 9 into the lower chamber 212.
Preferably, the wafer metal coating system further comprises a wafer pick-up device 8;
the wafer pickup device 8 includes a rear arm 81, a front arm 82, and a U-shaped hand 83;
the tail end of the front arm 82 is articulated with the head end of the rear arm 81;
the tail end of the U-shaped hand 83 is articulated with the head end of the front arm 82, and the two finger ends of the U-shaped hand 83 are respectively provided with an intake head;
the distance between the two finger ends of the U-shaped hand 83, the distance from the center of the left wafer lift base 12 to the center of the right wafer lift base 13, and the distance between the centers of the two chambers 21 of each pair of chambers are the same.
Preferably, at least one of the rear arm 81, the front arm 82, and the U-shaped hand 83 is provided with a reinforcing rib 84.
Preferably, the rear arm 81, the front arm 82 and the U-shaped hand 83 are made of titanium.
The wafer metal coating system has the advantages that the wafer pre-drawing device 1 is simple in structure and low in cost, a pair of wafers 9 completing the metal coating process from a pair of chambers of the metal coating process device can be simultaneously placed in the lower cavity of the pre-drawing cavity 11 of the wafer pre-drawing device, the left water cooling disc 14 and the right water cooling disc 15 in the lower cavity of the pre-drawing cavity 11 can enable the pair of wafers 9 completing the metal coating process to be cooled down quickly and naturally, the waiting time of high-temperature metal coating wafers in the wafer pre-drawing device (Loadlock) is reduced, and the wafer conveying efficiency of the wafer metal coating system is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present utility model, the following brief description of the drawings is given for the purpose of the present utility model, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings can be obtained according to these drawings without the need for inventive work for a person skilled in the art.
FIG. 1 is a schematic view of a wafer lift base drop structure of a wafer pre-pump apparatus according to an embodiment of a wafer metal plating system of the present utility model;
FIG. 2 is a schematic view of a wafer lift base lifting structure of a wafer pre-pump apparatus according to an embodiment of the wafer metal plating system of the present utility model;
FIG. 3 is a schematic top view of a water-cooled tray of a wafer pre-pump apparatus according to an embodiment of the wafer metal plating system of the present utility model;
FIG. 4 is a schematic cross-sectional view of a metal plating process apparatus of an embodiment of a wafer metal plating system of the present utility model;
FIG. 5 is a schematic view of a wafer pick-up device according to an embodiment of the present utility model;
FIG. 6 is a schematic view of a wafer pick-up device with a stiffener according to an embodiment of the wafer metal coating system of the present utility model;
FIG. 7 is a schematic diagram of a wafer metal plating method according to the present utility model.
Description of the reference numerals
1, a wafer pre-pumping device; 11 pre-pumping the cavity; 12 left wafer lift base; 13 right wafer lift base; 14 left water cooling disc; 15 right water cooling disc; 16 water-cooled tubes; 17 a base drive structure; 18 transverse partition plates; 19 bumps; 9, a wafer; 7, supporting the assembly; 71 left support; 72 right support; 2, a metal coating process device; a 21 chamber; 211 upper chamber; 212 a lower chamber; 213 spray plates; 214 exhaust ring groove; 215 vent holes; 216 a wafer carrier; 8 a wafer pick-up device; 81 trailing arms; 82 forearm; 83U-shaped hand; 84 stiffener.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by a person skilled in the art based on the embodiments of the utility model without any inventive effort, are intended to fall within the scope of the utility model.
The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "front", "rear", etc. are used merely to indicate relative positional relationships, which may also change accordingly when the absolute position of the object to be described changes.
It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other.
Example 1
As shown in fig. 1 and 2, the wafer metal coating system comprises a wafer pre-pumping device 1;
the wafer pre-drawing device 1 comprises a pre-drawing cavity 11, a left wafer lifting base 12, a right wafer lifting base 13, a left water cooling disc 14 and a right water cooling disc 15;
the pre-pumping cavity 11 is divided into an upper cavity and a lower cavity by a transverse partition plate 18;
the left water-cooling disc 14 and the right water-cooling disc 15 are both arranged in the lower cavity, the left water-cooling disc 14 is fixedly arranged at the left part of the bottom plate of the pre-extraction cavity 11, and the right water-cooling disc 15 is fixedly arranged at the right part of the bottom plate of the pre-extraction cavity 11;
a water cooling pipe 16 is arranged in the left water cooling disk 14 and the right water cooling disk 15;
the water inlet and the water outlet of the water cooling pipe 16 are communicated with the outside of the pre-pumping cavity 11;
the left wafer lifting base 12 is arranged in the center of the left water cooling disc 14 and can move up and down;
the right wafer lifting base 13 is arranged in the center of the right water cooling disc 15 and can move up and down;
the side wall of the lower cavity of the pre-pumping cavity 11 is provided with a lower feed inlet for placing or taking out the wafer 9 into the lower cavity of the pre-pumping cavity 11.
Preferably, at least one of the water inlet and the water outlet of the water cooling pipe 16 is communicated with the lower side of the bottom plate of the pre-pumping cavity 11.
Preferably, at least one of the water inlet and the water outlet of the water cooling pipe 16 is communicated to the outer side of the side wall of the pre-pumping cavity 11.
Preferably, as shown in fig. 2, a base driving structure 17 is fixed on the lower side of the pre-suction chamber 11, and the base driving structure 17 is used for driving the left wafer lift base 12 and the right wafer lift base 13 to lift.
In the wafer metal coating system of the first embodiment, the wafer pre-drawing device 1 is simple in structure and low in cost, a pair of wafers 9 completing the metal coating process from the paired chambers of the metal coating process device can be simultaneously placed in the lower cavity of the pre-drawing cavity 11 of the wafer pre-drawing device, and the left water cooling disc 14 and the right water cooling disc 15 in the lower cavity of the pre-drawing cavity 11 can enable the pair of wafers 9 completing the metal coating process to be cooled down quickly and naturally, so that the waiting time of the high-temperature metal coating wafers in the wafer pre-drawing device (Loadlock) is reduced, and the wafer conveying efficiency of the wafer metal coating system is improved.
Example two
In the wafer metal plating system according to the first embodiment, as shown in fig. 3, a plurality of bumps 19 are uniformly formed on the upper surfaces of the left water-cooled disk 14 and the right water-cooled disk 15 of the wafer pre-suction device 1.
Preferably, the bump 19 is made of ceramic material.
Preferably, the water cooling pipes 16 arranged in the left water cooling disk 14 and the right water cooling disk 15 are spiral.
In the wafer metal coating system of the second embodiment, the plurality of bumps 19 are uniformly formed on the upper surfaces of the left water-cooled disk 14 and the right water-cooled disk 15 of the wafer pre-suction device 1, so that the wafer 9 can be prevented from being contacted with the water-cooled disk in a large area, the contact area is small when the wafer 9 is contacted with the water-cooled disk, a negative pressure area is not formed, the effect of atmospheric pressure is reduced, and the wafer 9 can be prevented from being damaged due to the existence of the negative pressure when the wafer lifting base lifts up the wafer 9 when the wafer 9 is taken out from the wafer pre-suction device 1.
Example III
Based on the wafer metal coating system of the first embodiment, a wafer supporting component 7 is disposed in the upper cavity of the pre-pumping cavity 11 of the wafer pre-pumping device 1;
each layer of the wafer supporting component 7 is provided with a pair of supporting bodies which are arranged left and right;
the distance from the center of the left support 71 to the center of the right support 72 is equal to the distance from the center of the left wafer lift base 12 to the center of the right wafer lift base 13;
the side wall of the upper cavity of the pre-pumping cavity 11 is provided with an upper feed inlet for placing or taking out the wafer 9 into the upper cavity of the pre-pumping cavity 11.
In the wafer metal plating system of the third embodiment, the wafer supporting component 7 in the upper cavity of the pre-suction cavity 11 of the wafer pre-suction device 1 is used for placing the wafer 9 to be plated, and each layer of the wafer supporting component 7 is provided with a pair of left and right supporting bodies, so that the manipulator can conveniently grasp two wafers simultaneously and send the wafers into the paired chambers of the metal plating process device.
Example IV
Based on the third embodiment, the wafer metal coating system further comprises a metal coating process device 2;
as shown in fig. 4, the metal plating process device 2 has at least one pair of chambers 21;
placing a wafer to be coated in the chamber 21 for a metal coating process, and forming a metal film on the surface of the wafer;
the spacing d between the two chambers 21 of each pair is 5mm to 15mm.
Preferably, a thermal insulation material is arranged between the two chambers 21 of each pair of chambers; the spacing between the two chambers 21 of each pair of chambers may be shortened, for example, between 4mm and 10mm.
In the wafer metal plating system of the fourth embodiment, the metal plating process device 2 has a larger interval between the two chambers 21 of each pair of chambers, so that the temperature influence between the two chambers can be reduced, and the temperature of each chamber can be independently and accurately controlled even under a high-temperature process with the chamber wall temperature of more than 150 ℃.
Example five
Based on the wafer metal plating system of the fourth embodiment, the chamber 21 of the metal plating process device 2 is divided into an upper chamber 211 and a lower chamber 212;
a spray plate 213 is disposed in the upper chamber 211;
the shower plate 213 is used for injecting process gas into the upper chamber 211;
an exhaust ring groove 214 is formed on the periphery of the upper chamber 211;
the exhaust ring groove 214 is communicated with an exhaust hole 215 for exhausting the gas in the chamber 21 of the metal coating process device 2 to the outside of the chamber 21;
a wafer carrier 216 capable of moving up and down is disposed in the lower chamber 212;
the sidewall of the lower chamber 212 is provided with a coating feed port for inserting or removing the wafer 9 into the lower chamber 212.
Example six
Based on the fourth embodiment, the wafer metal coating system further includes a wafer pickup device 8;
as shown in fig. 5, the wafer pickup device 8 includes a rear arm 81, a front arm 82, and a U-shaped hand 83;
the tail end of the front arm 82 is articulated with the head end of the rear arm 81;
the tail end of the U-shaped hand 83 is articulated with the head end of the front arm 82, and the two finger ends of the U-shaped hand 83 are respectively provided with an intake head;
the distance between the two finger ends of the U-shaped hand 83, the distance from the center of the left wafer lift base 12 to the center of the right wafer lift base 13, and the distance between the centers of the two chambers 21 of each pair of chambers are the same.
Preferably, as shown in fig. 6, at least one of the rear arm 81, the front arm 82, and the U-shaped hand 83 is provided with a reinforcing rib 84.
Preferably, the rear arm 81, the front arm 82 and the U-shaped hand 83 are made of titanium.
Example seven
A wafer metal plating method using the wafer metal plating system of the sixth embodiment, as shown in fig. 7, includes the steps of:
s1, conveying a wafer 9 to be coated onto a wafer carrier 216 in a metal coating process device 2;
s2, completing a metal coating process on the wafer 9 on the wafer carrier 216 through the metal coating process device 2;
s3, picking up the wafer 9 in the pair of chambers 21 of the metal coating process device 2 through two pick-up heads of the U-shaped hand 83 of the wafer pick-up device 8, and sending the wafer 9 to the left wafer lifting base 12 and the right wafer lifting base 13 in the lower chamber of the wafer pre-suction device 1 in a vacuum environment;
s4, after the wafer 9 in the lower cavity of the wafer pre-pumping device 1 is cooled to be lower than the set temperature, the wafer is conveyed to a wafer box.
Preferably, in step S1, the wafer 9 to be coated is first transferred onto the support body of the wafer support assembly 7 in the upper cavity of the wafer pre-suction device 1, and then the wafer pick-up device 8 transfers the wafer 9 to be coated onto the wafer carrier 216 in the metal coating process device 2 on the support body of the wafer support assembly 7 in the upper cavity of the wafer pre-suction device 1.
Preferably, in step S2, the metal plating process temperature exceeds 400 ℃.
In the wafer metal plating method of the seventh embodiment, after the metal plating process is completed on the two wafers 9 in the paired chambers 21 of the metal plating process device 2, the two wafers 9 are sent to the left wafer lift base 12 and the right wafer lift base 13 in the lower cavity of the pre-suction cavity 11 of the wafer pre-suction device 1 by the vacuum manipulator in the vacuum environment, and the left wafer lift base 12 and the right wafer lift base 13 move up and down to enable the two wafers 9 to be spaced from the left water cooling disk 14 and the right water cooling disk 15 or attached to the upper surfaces of the left water cooling disk 14 and the right water cooling disk 15, so that the cooling liquid in the water cooling pipes 16 flowing through the left water cooling disk 14 and the right water cooling disk 15 can realize rapid and natural cooling of the two wafers 9, and when the cooled two wafers 9 are taken out and conveyed to the wafer box in the air environment for preservation, the metal film on the surfaces of the wafer box cannot be oxidized due to exposure to the oxygen-containing environment.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather to enable any modification, equivalent replacement, improvement or the like to be made within the spirit and principles of the utility model.
Claims (14)
1. The wafer metal coating system is characterized by comprising a wafer pre-pumping device (1);
the wafer pre-drawing device (1) comprises a pre-drawing cavity (11), a left wafer lifting base (12), a right wafer lifting base (13), a left water cooling disc (14) and a right water cooling disc (15);
the pre-pumping cavity (11) is divided into an upper cavity and a lower cavity by a transverse partition plate (18);
the left water cooling disc (14) and the right water cooling disc (15) are arranged in the lower cavity, the left water cooling disc (14) is fixedly arranged at the left part of the bottom plate of the pre-drawing cavity (11), and the right water cooling disc (15) is fixedly arranged at the right part of the bottom plate of the pre-drawing cavity (11);
a water cooling pipe (16) is arranged in the left water cooling disk (14) and the right water cooling disk (15);
the water inlet and the water outlet of the water cooling pipe (16) are communicated with the outside of the pre-pumping cavity (11);
the left wafer lifting base (12) is arranged in the center of the left water cooling disc (14) and can move up and down;
the right wafer lifting base (13) is arranged in the center of the right water cooling disc (15) and can move up and down;
the side wall of the lower cavity of the pre-pumping cavity (11) is provided with a lower feed inlet for putting in or taking out the wafer (9) from the lower cavity of the pre-pumping cavity (11).
2. The wafer metal plating system according to claim 1, wherein,
the lower side of the pre-pumping cavity (11) is fixedly provided with a base driving structure (17), and the base driving structure (17) is used for driving the left wafer lifting base (12) and the right wafer lifting base (13) to lift.
3. The wafer metal plating system according to claim 1, wherein,
at least one of the water inlet and the water outlet of the water cooling pipe (16) is communicated to the lower side of the bottom plate of the pre-pumping cavity (11).
4. The wafer metal plating system according to claim 1, wherein,
at least one of the water inlet and the water outlet of the water cooling pipe (16) is communicated to the outer side of the side wall of the pre-pumping cavity (11).
5. The wafer metal plating system according to claim 1, wherein,
a plurality of protruding blocks (19) are uniformly formed on the upper surfaces of a left water cooling disc (14) and a right water cooling disc (15) of the wafer pre-pumping device (1).
6. The wafer metal plating system according to claim 5, wherein,
the protruding blocks (19) are made of ceramic materials.
7. The wafer metal plating system according to claim 5, wherein,
the water cooling pipes (16) arranged in the left water cooling disc (14) and the right water cooling disc (15) are spiral.
8. The wafer metal plating system according to claim 5, wherein,
a wafer supporting component (7) is arranged in an upper cavity of a pre-pumping cavity (11) of the wafer pre-pumping device (1);
each layer of the wafer supporting component (7) is provided with a pair of supporting bodies which are arranged left and right;
the distance from the center of the left supporting body (71) to the center of the right supporting body (72) is equal to the distance from the center of the left wafer lifting base (12) to the center of the right wafer lifting base (13);
the side wall of the upper cavity of the pre-drawing cavity (11) is provided with an upper feed inlet for putting in or taking out the wafer (9) from the upper cavity of the pre-drawing cavity (11).
9. The wafer metal plating system according to claim 8, wherein,
the wafer metal coating system also comprises a metal coating process device (2);
the metal coating process device (2) is provided with at least one pair of chambers (21);
placing a wafer to be coated in the chamber (21) for metal coating process, and forming a metal film on the surface of the wafer;
the distance between the two chambers (21) of each pair of chambers is 5 mm-15 mm.
10. The wafer metal plating system according to claim 9, wherein,
an insulating material is arranged between the two chambers (21) of each pair of chambers.
11. The wafer metal plating system according to claim 9, wherein,
the cavity (21) of the metal coating process device (2) is divided into an upper cavity (211) and a lower cavity (212);
a spray plate (213) is arranged in the upper chamber (211);
the spray plate (213) is used for injecting process gas into the upper chamber (211);
an exhaust ring groove (214) is formed on the periphery of the upper chamber (211);
the exhaust ring groove (214) is communicated with an exhaust hole (215) for exhausting the gas in the chamber (21) of the metal coating process device (2) to the outside of the chamber (21);
a wafer carrier (216) capable of moving up and down is arranged in the lower chamber (212);
the side wall of the lower chamber (212) is provided with a coating feed port for inserting or taking out the wafer (9) into the lower chamber (212).
12. The wafer metal plating system according to claim 9, wherein,
the wafer metal coating system also comprises a wafer pickup device (8);
the wafer pickup device (8) comprises a rear arm (81), a front arm (82) and a U-shaped hand (83);
the tail end of the front arm (82) is articulated with the head end of the rear arm (81);
the tail end of the U-shaped hand (83) is connected with the head end of the forearm (82) in a joint manner, and the two finger ends of the U-shaped hand (83) are respectively provided with an intake head;
the distance between the two finger ends of the U-shaped hand (83), the distance from the center of the left wafer lifting base (12) to the center of the right wafer lifting base (13) and the distance between the centers of the two chambers (21) of each pair of chambers are the same.
13. The wafer metal plating system according to claim 12, wherein,
at least one of the rear arm (81), the front arm (82) and the U-shaped hand (83) is provided with a reinforcing rib (84).
14. The wafer metal plating system according to claim 12, wherein,
the rear arm (81), the front arm (82) and the U-shaped hand (83) are made of titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321358415.7U CN219793106U (en) | 2023-05-31 | 2023-05-31 | Wafer metal coating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321358415.7U CN219793106U (en) | 2023-05-31 | 2023-05-31 | Wafer metal coating system |
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