CN111696882A - Cavity and semiconductor processing equipment - Google Patents
Cavity and semiconductor processing equipment Download PDFInfo
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- CN111696882A CN111696882A CN201910186002.7A CN201910186002A CN111696882A CN 111696882 A CN111696882 A CN 111696882A CN 201910186002 A CN201910186002 A CN 201910186002A CN 111696882 A CN111696882 A CN 111696882A
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims abstract description 117
- 230000008569 process Effects 0.000 claims abstract description 110
- 238000001816 cooling Methods 0.000 claims abstract description 107
- 230000007246 mechanism Effects 0.000 claims abstract description 37
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims description 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 238000013404 process transfer Methods 0.000 claims description 6
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 239000000112 cooling gas Substances 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 15
- 238000000427 thin-film deposition Methods 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000001179 sorption measurement Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The chamber provided by the invention comprises a chamber body, a process base arranged in the chamber body, a cooling base arranged in the chamber body and a transmission mechanism, wherein the cooling base is used for cooling a wafer arranged on the cooling base, and the transmission mechanism is used for transmitting the wafer between the process base and the cooling base. According to the chamber, the process base and the cooling base are integrated in the same chamber, when a cooling process is carried out, a large amount of gas is not required to be introduced to increase the pressure of the chamber, the wafer can be effectively cooled on the cooling base, the stable pressure of the chamber is maintained, and meanwhile, the wafer can be ensured to be always subjected to a thin film deposition process on the process base, so that the cooling efficiency and the yield of the wafer are improved by the chamber provided by the invention, and meanwhile, the stability of the working condition of the chamber is also improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a cavity and semiconductor processing equipment.
Background
PVD is one of the widely used methods for depositing thin films in the semiconductor and related industries. To meet the demands of high volume manufacturing, it is often desirable to maximize the rate of film deposition and to make production as continuous as possible. Although the deposition rate of the film can be increased by increasing the sputtering power, the semiconductor wafer (or other substrate) is continuously heated as the power is increased and deposition continues, due to the bombardment of energetic and charged particles. For certain manufacturing processes or special substrates, it is desirable to control the temperature of the wafer to a certain range or as low as possible in order to avoid damage to previously deposited materials or substrates. At the same time, too high a temperature may adversely affect the properties of some materials, such as increasing the stress or grain size of the deposited film.
Currently, the primary means of cooling the wafer is to apply a back-blow gas to the back side of the wafer to increase the heat exchange between the wafer and the susceptor. This cooling requires that the wafer be held in place. One is that an electrostatic chuck (ESC) is used to support a wafer, and then back-blowing air is introduced from a base to a chamber, thereby cooling the wafer, but the electrostatic chuck cannot perform effective electrostatic adsorption on highly warped, taped and insulating substrates, and is particularly limited in application in the field of post-packaging; the other method is that a mechanical pressing ring (Clamp ring) is used for fixing the wafer, the edge of the wafer is pressed by the self weight of the pressing ring, then back blowing is applied to cool the wafer, but metal cannot be deposited on the edge of the wafer due to the fact that the pressing ring presses the edge of the wafer, the subsequent process (such as electroplating) is affected, and the application of the structure is also greatly limited.
In the normal process, the edge of the wafer has no pressure ring, and the film can be completely deposited, but because no pressure ring is provided, a large amount of gas can not be introduced into the back of the wafer to cool the wafer, the cooling of the wafer is realized by the following method: firstly depositing a film with a certain thickness, stopping the process and closing a pumping valve after the temperature of the wafer rises, filling a large amount of gas into a chamber to ensure that the pressure of the chamber reaches 1 torr or even higher, keeping for a period of time to ensure that heat exchange is carried out between the wafer and a base, then pumping away the gas, continuing to carry out the next deposition, repeating the processes of gas filling, cooling and gas pumping after the temperature rises, and repeating the steps to finish the film deposition at a certain temperature. However, the slow cooling of the gas charge requires a long hold-up process to adequately cool the wafer, additional time is required for both the gas charge and the gas bleed to achieve the desired chamber conditions, and this process overloads the vacuum condensate pump of the chamber, which can affect the performance of the pump and thus the background vacuum of the chamber. If the deposited film is thick, several cycles of gas-charge cooling may be required to maintain the wafer at a sufficiently low temperature, which results in a significant reduction in throughput and is economically undesirable.
In view of the above, there is a need in the art for a chamber structure that can improve the cooling efficiency of the wafer and ensure the continuous process, thereby improving the throughput.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a chamber and semiconductor processing equipment, which can improve the cooling efficiency of a wafer and ensure the continuous process.
In order to solve the above problems, the present invention provides a chamber comprising a chamber body in which a process susceptor, a cooling susceptor and a transfer mechanism are disposed, wherein,
the cooling base is used for cooling the wafer placed on the cooling base;
the transfer mechanism is used for transferring the wafer between the process pedestal and the cooling pedestal.
Further, the cooling base comprises a base body and a fixing structure, wherein the base body is provided with a bearing surface for bearing a wafer; the fixing structure is used for fixing the wafer on the bearing surface;
and a cooling pipeline is arranged in the base body and used for conveying cooling gas to a closed space between the bearing surface and the wafer.
Further, the fixing structure comprises an adsorption electrode arranged in the base body, and the adsorption electrode is used for fixing the wafer on the bearing surface in an electrostatic adsorption mode.
Further, the fixing structure comprises a support piece and a pressing ring, wherein the support piece is fixed in the cavity and is positioned right above the base body;
the cooling base further comprises a lifting driving mechanism, and the lifting driving mechanism is used for driving the base body to ascend to a cooling position or descend to a cooling transmission position;
when the base body is located at the cooling position, the pressure ring presses the edge area of the wafer by utilizing the self gravity; when the base body is located at the cooling transfer position, the pressure ring is supported by the support.
Further, the process base and the cooling base are arranged at intervals in the horizontal direction, and the conveying mechanism is arranged in the cavity and is located in an interval area between the process base and the cooling base.
Further, the transmission mechanism comprises a first mechanical arm, a second mechanical arm, a supporting shaft and a rotary driving mechanism;
the first mechanical arm and the second mechanical arm are respectively connected with the supporting shaft and are symmetrically arranged along the axial direction of the supporting shaft; the first mechanical arm is used for grabbing the wafer positioned on the process base or the cooling base and placing the wafer on the cooling base or the process base, and the second mechanical arm is used for grabbing the wafer positioned on the cooling base or the process base and placing the wafer on the process base or the cooling base;
the rotary driving mechanism is used for driving the supporting shaft to rotate in a horizontal plane.
Furthermore, the chamber also comprises a wafer transferring port which is arranged on the cavity body and used for transferring the wafer into or out of the chamber.
Furthermore, the wafer conveying port is arranged corresponding to the position of the process base.
Further, the chamber further comprises a liner, a process structure and a process pedestal driving structure;
the process structure is used for forming an environment required by the process;
the lining extends downwards from the lower surface of the top wall of the cavity and is positioned right above the process base;
the process base driving structure is used for driving the process base to move between a closed position and a process transfer position;
the closed position is a position where the process base is in contact with the lining, so that the lining, the process base and the process structure jointly form a closed process space, and the process transfer position is a position where the process base is far away from the lining and the conveying mechanism can grab the wafer.
The invention also provides semiconductor processing equipment which comprises the chamber provided by the invention so as to simultaneously carry out a semiconductor process and a cooling process.
The invention has the following beneficial effects:
the chamber provided by the invention comprises a chamber body, a process base arranged in the chamber body, a cooling base arranged in the chamber body and a transmission mechanism, wherein the cooling base is used for cooling a wafer arranged on the cooling base, and the transmission mechanism is used for transmitting the wafer between the process base and the cooling base. According to the chamber, the process base and the cooling base are integrated in the same chamber, when a cooling process is carried out, a large amount of gas is not required to be introduced to increase the pressure of the chamber, the wafer can be effectively cooled on the cooling base, the stable pressure of the chamber is maintained, and meanwhile, the wafer can be ensured to be always subjected to a thin film deposition process on the process base, so that the cooling efficiency and the yield of the wafer are improved by the chamber provided by the invention, and meanwhile, the stability of the working condition of the chamber is also improved.
The semiconductor processing equipment provided by the invention comprises the cavity, and the cavity is the cavity provided by the invention, so that a semiconductor process and a cooling process can be simultaneously carried out, the cooling efficiency and the production capacity of a wafer are further improved, and the stability of the semiconductor processing equipment is also improved.
Drawings
FIG. 1 is a schematic structural diagram of a chamber provided in an embodiment of the present invention;
FIG. 2a is a schematic view of a cooling pedestal in the chamber of FIG. 1;
FIG. 2b is a schematic view of a process pedestal in the chamber of FIG. 1;
fig. 3 is a top view of the chamber of fig. 1.
Wherein:
1-a cavity; 2-a wafer; 10-a process base; 20-cooling the base; 21-a pressure ring; 22-cooling line; 23-a support; 31-a first robot arm; 32-a second robot arm; 33-a support shaft; 41-a sheet conveying port; 51-an inner liner; 52-Process Structure.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a chamber according to an embodiment of the present invention. Fig. 3 is a top view of the chamber of fig. 1.
As shown in fig. 1 and 3, an embodiment of the present invention provides a chamber including a chamber body 1, in which a process susceptor 10 for performing a semiconductor process on a wafer 2 placed thereon, a cooling susceptor 20 for cooling the wafer 2 placed thereon, and a transfer mechanism for transferring the wafer 2 between the process susceptor 10 and the cooling susceptor 20 are disposed in the chamber body 1.
According to the chamber provided by the invention, the process base 10 and the cooling base 20 are integrated in the same chamber 1, when a cooling process is carried out, the wafer 2 can be effectively cooled on the cooling base 20 without introducing a large amount of gas to increase the pressure of the chamber, the pressure stability of the chamber 1 is maintained, and meanwhile, the wafer 2 on the process base 10 can be ensured to be subjected to a film deposition process all the time, so that the cooling efficiency and the productivity of the wafer 2 are improved by the chamber provided by the invention, and meanwhile, the stability of the working condition of the chamber is also improved.
The structure of the cooling susceptor used in the embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
In the present embodiment, the cooling susceptor 10 includes a susceptor body and a fixing structure, wherein the susceptor body is provided with a carrying surface for carrying the wafer 2, the fixing structure is used for fixing the wafer 2 on the carrying surface, and the susceptor body is provided with a cooling pipeline 22 for delivering cooling gas to an enclosed space between the carrying surface and the wafer 2, so as to cool the wafer 2.
As a specific form of the fixing structure, fixing is performed by means of mechanical pressing. FIG. 2a is a schematic diagram of the cooling pedestal in the chamber of FIG. 1. Specifically, as shown in fig. 2a, the fixing structure includes a supporter 23, a pressing ring 21, and a lifting drive mechanism. The supporting member 23 is fixed in the cavity 1 and is not directly above the base body, and the lifting driving mechanism is used for driving the base body to ascend to a cooling position or descend to a cooling transfer position. When the base body is located at the cooling position, the pressing ring 21 presses the edge region of the wafer 2 by its own weight; when the base body is in the cooling transfer position, the pressing ring 21 is supported by the support 23, and the base body is lowered to a position where the transport mechanism can pick and place the wafer 2. In the process, the position of the support 23 is maintained.
It should be noted that, in the present embodiment, the support 23 is disposed on the inner wall of the cavity 1, and the lifting driving mechanism is used for driving the cooling susceptor 20 to ascend or descend, but the present invention is not limited to this, and in practical application, the lifting driving mechanism may also be used for driving the support 23 to ascend to a cooling transfer position or descend to the cooling position, when the support 23 ascends to the cooling transfer position, the pressing ring 21 is supported by the support 23, and the susceptor body descends to a position where the transportation mechanism can pick and place the wafer 2; when the support 23 is lowered to the cooling position, the pressing ring 21 presses the edge area of the wafer 2 by its own weight. During this process, the position of the cooling susceptor 20 is maintained. That is, the present invention is not limited to the driving object of the elevating driving mechanism, and any object can be included in the scope of the present invention as long as the cooling position at which the susceptor main body presses the edge of the wafer 2 by the pressing ring 21 and the cooling transmission position at which the pressing ring 21 is supported by the supporter 23 can be changed.
As another specific form of the fixing structure, the fixing is performed by electrostatic adsorption. Specifically, the fixing structure includes an adsorption electrode disposed in the susceptor body, and the adsorption electrode is used for fixing the wafer 2 placed on the carrying surface in an electrostatic adsorption manner. In the present fixing method, since the wafer 2 is fixed by the electrostatic control method, the cooling susceptor 20 and the supporting member 23 do not need to be driven as in the mechanical pressing method, and therefore, the lifting/lowering driving mechanism can be omitted.
The specific structure of the transport mechanism employed in the embodiment of the present invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 3, the process susceptor 10 and the cooling susceptor 20 are horizontally spaced apart, and the transfer mechanism 30 is disposed in the chamber in a spaced-apart region between the process susceptor 10 and the cooling susceptor 20.
In the present embodiment, the transfer mechanism includes a first robot arm 31, a second robot arm 32, a support shaft 33, and a rotation drive mechanism (not shown in the figure). The first mechanical arm 31 and the second mechanical arm 32 are respectively connected to the support shaft 33 and are symmetrically arranged along the axial direction of the support shaft. The first robot arm 31 is used to grasp the wafer 2 on the process susceptor 10 or the cooling susceptor 20 and place the wafer 2 on the cooling susceptor 20 or the process susceptor 10, and the second robot arm 32 is used to grasp the wafer 2 on the cooling susceptor 20 or the process susceptor 10 and place the wafer 2 on the process susceptor 10 or the cooling susceptor 20. The rotation driving mechanism is used for driving the support shaft to rotate in the horizontal plane so as to drive the first mechanical arm 31 and the second mechanical arm 32 to rotate. By providing the rotation driving mechanism to drive the first robot arm 31 and the second robot arm 32 to move to the relative position of the other susceptor and place the wafer after the first robot arm 31 and the second robot arm 32 grasp the wafer 2 from one susceptor, the transfer of the wafer 2 between the two susceptors is completed.
In order to improve the flexibility of the first robot arm 31 and the second robot arm 32, the transfer mechanism further includes a lifting driving mechanism, and the lifting driving mechanism is connected to the supporting shaft 33 and is used for driving the supporting shaft 33 to lift. Through setting up the lift drive structure, when technology base 10 or cooling base 20 are highly unusual, still can drive first robotic arm 31 and second robotic arm 32 through the lift drive structure and go up and down to make first robotic arm 31 and second robotic arm 32 can reach the height of technology base 10 or cooling base 20, in order to accomplish and get and put the piece.
As shown in fig. 3, the chamber further includes a wafer transfer port 41 opened in the chamber body 1, and the wafer transfer port 1 is used for transferring the wafer 2 into or out of the chamber.
Wherein, the sheet transferring port 41 is arranged corresponding to the position of the process base 10. The position corresponding to the process base 10 means that the height of the wafer transfer port 41 is the same as or similar to the height of the process base 10, and the circumferential position of the wafer transfer port 41 on the chamber 1 is closer to the process base 10.
FIG. 2b is a schematic view of a process pedestal in the chamber of FIG. 1.
In this embodiment, as shown in FIG. 2b, the chamber further comprises a liner 51, a process structure 52 and a process pedestal drive structure. Wherein, the process structure 52 is used for forming the environment required by the process, and the liner 51 extends downwards from the lower surface of the top wall of the cavity 1 and is positioned right above the process base 10; the process base drive structure is used to drive the process base 10 between the closed position and the process transfer position. The closed position is a position where the process base 10 contacts the lining 51, and the lining 51, the process base 10 and the process structure 52 together form a closed process space, and the process transfer position is a position where the process base 10 is away from the lining 51 and the transport mechanism can grasp the wafer 2.
The process structure 52 is a plasma generating structure, and includes a magnetron, a rotating motor, and a target, wherein the rotating motor is connected to the magnetron to drive the magnetron to rotate above the target. Of course, the process structure 52 may be other structures as long as the environment required by a certain process can be formed, and all such structures are within the scope of the present invention.
In the present embodiment, since the cooling susceptor 20 for performing the cooling process is separately provided, the process susceptor 10 does not need to be provided with a structure for performing the cooling process, that is, a chuck having no electrostatic adsorption function or a susceptor having no mechanical compression ring or no back-blowing duct may be used as the process susceptor 10 in the present embodiment.
As another aspect of the present invention, the present invention also provides a semiconductor processing apparatus including the chamber provided by the embodiment of the present invention to simultaneously perform a semiconductor process and a cooling process.
By using the chamber provided by the invention, the semiconductor process and the cooling process can be simultaneously carried out, so that the cooling efficiency and the yield of the wafer are improved, and the stability of the semiconductor processing equipment is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A chamber, comprising a cavity, characterized in that a process base, a cooling base and a transfer mechanism are arranged in the cavity, wherein,
the cooling base is used for cooling the wafer placed on the cooling base;
the transfer mechanism is used for transferring the wafer between the process pedestal and the cooling pedestal.
2. The chamber of claim 1, wherein the cooling susceptor comprises a susceptor body and a fixed structure, wherein the susceptor body is provided with a carrying surface for carrying wafers; the fixing structure is used for fixing the wafer on the bearing surface;
and a cooling pipeline is arranged in the base body and used for conveying cooling gas to a closed space between the bearing surface and the wafer.
3. The chamber of claim 2, wherein the securing structure comprises a chucking electrode disposed in the susceptor body for electrostatically chucking the wafer disposed on the carrying surface.
4. The chamber of claim 2, wherein the securing structure comprises a support and a compression ring, wherein the support is secured in the cavity directly above the base body;
the cooling base further comprises a lifting driving mechanism, and the lifting driving mechanism is used for driving the base body to ascend to a cooling position or descend to a cooling transmission position;
when the base body is located at the cooling position, the pressure ring presses the edge area of the wafer by utilizing the self gravity; when the base body is located at the cooling transfer position, the pressure ring is supported by the support.
5. The chamber of any of claims 1-4, wherein the process pedestal is horizontally spaced from the cooling pedestal, and the transport mechanism is disposed in the cavity in a spaced-apart region between the process pedestal and the cooling pedestal.
6. The chamber of claim 5, wherein the transfer mechanism comprises a first robot arm, a second robot arm, a support shaft, and a rotational drive mechanism;
the first mechanical arm and the second mechanical arm are respectively connected with the supporting shaft and are symmetrically arranged along the axial direction of the supporting shaft; the first mechanical arm is used for grabbing the wafer positioned on the process base or the cooling base and placing the wafer on the cooling base or the process base, and the second mechanical arm is used for grabbing the wafer positioned on the cooling base or the process base and placing the wafer on the process base or the cooling base;
the rotary driving mechanism is used for driving the supporting shaft to rotate in a horizontal plane.
7. The chamber of claim 1, further comprising a wafer transfer port opened on the chamber body for transferring the wafer into or out of the chamber.
8. The chamber of claim 7, wherein the wafer transfer port is positioned to correspond to a location of the process pedestal.
9. The chamber of claim 1, further comprising a liner, a process structure, and a process pedestal drive structure;
the process structure is used for forming an environment required by the process;
the lining extends downwards from the lower surface of the top wall of the cavity and is positioned right above the process base;
the process base driving structure is used for driving the process base to move between a closed position and a process transfer position;
the closed position is a position where the process base is in contact with the lining, so that the lining, the process base and the process structure jointly form a closed process space, and the process transfer position is a position where the process base is far away from the lining and the conveying mechanism can grab the wafer.
10. A semiconductor processing apparatus comprising the chamber of any one of claims 1 to 9 to simultaneously perform a semiconductor process and a cooling process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910186002.7A CN111696882B (en) | 2019-03-12 | 2019-03-12 | Chamber and semiconductor processing equipment |
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| CN201910186002.7A CN111696882B (en) | 2019-03-12 | 2019-03-12 | Chamber and semiconductor processing equipment |
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| CN111696882A true CN111696882A (en) | 2020-09-22 |
| CN111696882B CN111696882B (en) | 2024-04-12 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112151436A (en) * | 2020-09-27 | 2020-12-29 | 北京北方华创微电子装备有限公司 | Compression ring assembly and semiconductor process chamber |
| US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113327885A (en) * | 2021-05-26 | 2021-08-31 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and compression ring loading and unloading method |
| US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
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| CN102007588A (en) * | 2008-09-16 | 2011-04-06 | 东京毅力科创株式会社 | Method for reducing temperature of substrate placing table, computer-readable storage medium, and substrate processing system |
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| CN104241184A (en) * | 2013-06-19 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrying device and plasma processing equipment |
| CN104952762A (en) * | 2014-03-27 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cooling chamber and semiconductor processing equipment |
| CN108456860A (en) * | 2017-02-22 | 2018-08-28 | 北京北方华创微电子装备有限公司 | A kind of deposition chambers and film deposition device |
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| CN112151436B (en) * | 2020-09-27 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Compression ring assembly and semiconductor process chamber |
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113327885A (en) * | 2021-05-26 | 2021-08-31 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and compression ring loading and unloading method |
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