WO2023019656A1 - 晶圆传送装置、传送方法和晶圆传送控制装置 - Google Patents

晶圆传送装置、传送方法和晶圆传送控制装置 Download PDF

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Publication number
WO2023019656A1
WO2023019656A1 PCT/CN2021/116879 CN2021116879W WO2023019656A1 WO 2023019656 A1 WO2023019656 A1 WO 2023019656A1 CN 2021116879 W CN2021116879 W CN 2021116879W WO 2023019656 A1 WO2023019656 A1 WO 2023019656A1
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WIPO (PCT)
Prior art keywords
wafer
transfer
unit
chamber
information
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PCT/CN2021/116879
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English (en)
French (fr)
Inventor
郑分成
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长鑫存储技术有限公司
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Priority to US17/648,452 priority Critical patent/US20230054858A1/en
Publication of WO2023019656A1 publication Critical patent/WO2023019656A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Definitions

  • the present disclosure relates to, but is not limited to, a wafer transfer device, a transfer method, and a wafer transfer control device.
  • the wafer needs to be transferred between the transfer chamber and each process chamber, wherein there is a chamber door that can be closed or opened between the transfer chamber and the process chamber.
  • the transfer position of the wafer will be shifted, and the position shift error will become larger and larger, resulting in damage to the wafer when it touches the chamber door, and a high defect rate of the product.
  • the disclosure provides a wafer transfer device, a transfer method, and a wafer transfer control device.
  • a first aspect of an embodiment of the present disclosure provides a transfer device, the wafer transfer device includes:
  • a transfer chamber the transfer chamber is provided with a transfer unit for transferring wafers
  • At least one process chamber for processing the wafer the at least one process chamber communicates with the transfer chamber, and a chamber door is provided at a position where the process chamber communicates;
  • a first detection unit configured to detect position information between the transmission unit and the chamber door, the first detection unit includes a first transmitting end and a first receiving end, wherein the first transmitting end is set On one of the transfer unit and the chamber door, the first transmitting end is disposed on the other of the transfer unit and the chamber door;
  • control unit electrically connected to the first detection unit, the conveying unit, and the chamber door, the control unit is used to determine the position information between the conveying unit and the chamber door, and control The transfer unit moves, and the chamber door is controlled to open or close.
  • a second aspect of the embodiments of the present disclosure provides a wafer transfer method, which is applied to a wafer transfer device in the process of transferring a wafer between a process chamber and a transfer chamber, and the wafer transfer method includes:
  • the preset position information is used to characterize the position where the transfer unit transfers the wafer and does not interfere with the process chamber;
  • the chamber door is controlled to be opened.
  • a third aspect of the embodiments of the present disclosure provides a wafer transfer control device, which is applied to the wafer transfer device in the process of transferring wafers between the process chamber and the transfer chamber, and the control device includes:
  • An acquisition module configured to acquire position information between the transfer unit and the chamber door
  • the obtaining module is also used to obtain preset position information, and the preset position information is used to characterize the position where the transfer unit transfers the wafer and does not interfere with the process chamber;
  • a processing module configured to determine whether the location information is consistent with the preset location information
  • a control module configured to control the opening of the chamber door when the position information is consistent with the preset position information.
  • the first detection unit includes a first transmitting end and a first receiving end, by setting the first emitting end in the transfer chamber and process One of the chamber door and the transfer unit between the chambers, the first receiving end is set on the other of the chamber door and the transfer unit, by setting the first detection unit to perform position detection during the wafer transfer process,
  • the position of the wafer is rectified in time, so as to effectively improve the transfer accuracy of the wafer and reduce the damage rate during the transfer of the wafer.
  • Fig. 1 is a schematic diagram of a wafer transfer device according to an exemplary embodiment.
  • Fig. 2 is a schematic diagram of a transfer unit in a wafer transfer device according to an exemplary embodiment.
  • Fig. 3 is a schematic diagram showing the position of a first detection unit in a wafer transfer device according to an exemplary embodiment.
  • Fig. 4 is a schematic diagram showing the positions of a carrier part and a second detection unit in a wafer transfer device according to an exemplary embodiment.
  • Fig. 5 is a schematic diagram of detecting the center of a wafer by a second detection unit in a wafer transfer device according to an exemplary embodiment.
  • Fig. 6 is a schematic flowchart of a method for transferring a wafer according to an exemplary embodiment.
  • Fig. 7 is a schematic diagram of a wafer transfer control device according to an exemplary embodiment.
  • Transmission chamber 2. Process chamber;
  • the first detection unit 4. The control unit;
  • Control module 611. Bearing body;
  • the wafer can be transferred between the transfer chamber and the process chamber through the robot arm, and there is a chamber that can be closed or opened between the transfer chamber and the process chamber Door.
  • the robotic arm needs to be calibrated during use, but the degree of calibration by the operator will vary to a certain extent each time. And with the aging of the robotic arm, there will be accumulated errors in the process of grabbing the wafer by the robotic arm, which will cause the wafer to shift during the transfer process, causing the wafer to touch the chamber door and cause damage, reducing product quality. Rate.
  • the first detection unit includes a first transmitting end and a first receiving end, by setting the first emitting end in the transfer chamber and process One of the chamber door and the transfer unit between the chambers, the first receiving end is set on the other of the chamber door and the transfer unit, by setting the first detection unit to perform position detection during the wafer transfer process,
  • the position of the wafer is rectified in time, so as to effectively improve the transfer accuracy of the wafer and reduce the damage rate during the transfer of the wafer.
  • FIG. 1 shows a schematic diagram of a wafer transfer device provided according to an exemplary embodiment of the present disclosure.
  • FIG. 2 is a schematic diagram of a transfer unit in a wafer transfer device.
  • FIG. 3 is a schematic diagram of the position of the first detection unit in the wafer transfer device.
  • FIG. 4 is a schematic diagram of the positions of the carrying portion and the second detection unit in the wafer transfer device.
  • FIG. 5 is a schematic diagram of detecting the center of the wafer by the second detection unit in the wafer transfer device.
  • the wafer transfer device will be introduced below with reference to FIGS. 1-5 .
  • an exemplary embodiment of the present disclosure provides a wafer transfer device, which includes: a transfer chamber 1, at least one process chamber 2, a first detection unit 3 and a control unit 4.
  • the process chamber 2 usually works in a vacuum state, and the wafer is in a normal atmospheric pressure environment before and after processing. Before the wafer enters the process chamber 2, it will first enter the transfer chamber 1, and the transfer chamber 1 is used as an intermediate transition channel between the normal atmospheric pressure environment and the vacuum state, and is used for temporarily placing the wafer 5 to be transferred.
  • a transfer unit 6 is provided in the transfer chamber 1 , and the transfer unit 6 is used for transferring the wafer 5 between the transfer chamber 1 and the process chamber 2 .
  • the transfer unit 6 may comprise a robotic arm.
  • a single-arm manipulator or a double-arm manipulator may be used.
  • the transfer unit 6 can be a single-arm manipulator.
  • the transfer unit can use a dual-arm manipulator to improve wafer transfer efficiency and production efficiency.
  • the transfer unit 6 is a dual-arm manipulator.
  • At least one process chamber 2 is provided on the periphery of the transfer chamber 1 .
  • At least one processing chamber 2 is used to complete different processing processes of the wafer 5 during the manufacturing process.
  • the communication between the process chamber 2 and the transfer chamber 1 is convenient for the transfer unit 6 to transfer the wafer 5 between the process chamber 2 and the transfer chamber 1 .
  • a chamber door 7 is provided at the position where the process chamber 2 communicates with the transfer chamber 1, and the chamber door 7 is used to close when the wafer enters the process chamber 2 or the transfer chamber 1 completely, so that the process chamber
  • the chamber 2 or the transfer chamber 1 is in a closed state, and the opening or closing of the chamber door 7 can be automatically controlled by a program, or manually controlled.
  • a first detection unit 3 is provided in the wafer transfer device.
  • the first detection unit 3 is used to detect the position information between the transfer unit 6 and the chamber door 7, and the position information is used to indicate that the end of the transfer unit 6 grabbing the wafer 5 enters the process chamber 2, the wafer 5 Whether the end of the chamber corresponds to the chamber door 7.
  • the chamber door 7 is opened, and the transfer unit 6 grabs the wafer 5 from the process chamber 2 and transfers the wafer 5 to the transfer chamber 1 or, the wafer 5 is transferred from the transfer chamber 1 to the process chamber 2 by the transfer unit 6 .
  • the first detection unit 3 includes a first transmitting end 31 and a first receiving end 32 .
  • the first transmitting end 31 is disposed on one of the transmission unit 6 and the chamber door 7
  • the first receiving end 32 is disposed on the other of the transmission unit 6 and the chamber door 7 . That is, when the first transmitting end 31 is arranged on the transfer unit 6, the first receiving end 32 is arranged on the chamber door 7; or, when the first transmitting end 31 is arranged on the chamber door 7, the first receiving end 32 is set on the transfer unit 6 .
  • the first transmitting end 31 includes an infrared transmitter
  • the first receiving end 32 includes an infrared receiver.
  • the two first transmitting ends 31 are symmetrically arranged on the transfer unit 6, and the two first transmitting ends 31 are arranged on both sides of the wafer 5, and the two first receiving ends 32 are symmetrically arranged on the chamber door 7 for Locate the center point of the transfer unit 6 .
  • two first transmitting terminals 31 are provided in one-to-one correspondence with two first receiving terminals 32 , that is, one first transmitting terminal 31 corresponds to one first receiving terminal 32 .
  • the chamber door 7 can only be opened when the two first receiving ends 32 simultaneously receive the transmission signals emitted by the two first transmitting ends 31.
  • the transmission unit 6 will The wafer 5 is transferred to the transfer process chamber 2, or the transfer unit 6 takes the wafer 5 out of the process chamber 2, thereby effectively reducing the occurrence of damage caused by touching the chamber door during the wafer transfer process probability.
  • the present disclosure does not specifically limit the number of the first transmitting end 31 and the number of the first receiving end 32 .
  • the number of the first transmitting end 31 and the number of the first receiving end 32 can be one; for another example, the number of the first transmitting end 31 and the first receiving end 32 are three each, and they are set in one-to-one correspondence.
  • a control unit 4 is further included in the wafer transfer device, and the control unit 4 is electrically connected to the first detection unit 3 , the transfer unit 6 and the chamber door 7 respectively.
  • the control unit 4 is used to determine the position information between the conveying unit 6 and the chamber door 7 , and control the movement of the conveying unit 6 and control the opening or closing of the chamber door 7 through the position information.
  • the first transmitting end is arranged on one of the chamber door and the transfer unit between the transfer chamber and the process chamber, and the first receiving end is arranged on the other of the chamber door and the transfer unit. 1.
  • the control unit controls the opening of the chamber door.
  • the transfer unit 6 includes a carrying portion 61 for carrying the wafer 5 and a transfer assembly 62 .
  • the transfer assembly 62 is connected to the carrier part 61 and used to drive the carrier part 61 to move between the transfer chamber 1 and the process chamber 2 .
  • the transmission assembly 62 may include a base, an elevating structure arranged on the base, a moving structure connected to the elevating structure, and a rotating structure connected to the moving structure, and the rotating structure is rotatably connected to the bearing part 61 .
  • the lifting structure is used to drive the moving structure to move in the vertical direction
  • the moving structure is used to drive the rotating structure to move in the horizontal direction
  • the bearing part 61 can move in the horizontal direction together with the rotating structure.
  • relative rotation between the bearing part 61 and the rotating structure is possible.
  • the bearing part 61 includes a bearing body 611 and a plurality of bearing rods 612 disposed on the bearing body 611 at intervals.
  • a plurality of carrying rods 612 are arranged side by side and at intervals, and the plurality of carrying rods 612 constitute a carrying area for carrying the wafer 5 .
  • two first emitting ends 31 are disposed on the carrying body 611 , and the two first emitting ends 31 are respectively arranged on two sides of the carrying area, and the two first emitting ends 31 are arranged symmetrically.
  • the material of the transfer component 62 is made of carbon fiber material to strengthen the structural strength of the transfer component 62 .
  • the material of the bearing body 611 and the bearing rod 612 is a ceramic material, such as Al2O3 or SiC, which has high mechanical strength and good wear resistance, and reduces the wear on the wafer.
  • the bearing body and the bearing rod made of ceramic materials have good wear resistance. Therefore, it is not easy to generate wear waste during the contact process of the wafer, which solves the problem of the wear waste scratching the surface of the wafer, and at the same time prolongs the service life of the bearing part.
  • the wafer transfer device of the embodiment of the present disclosure further includes a second detection unit 8 electrically connected to the control unit 4, and the second detection unit 8 is arranged on the carrying rod 612 on the end away from the carrying body 611 .
  • the second detection unit 8 includes an infrared emitting sensor.
  • the infrared emitting sensor is equipped with a light source emitting end and a light source receiving end. signal, when the sensing signal is blocked by the wafer 5, the sensing signal is reflected and received by the light source receiving end, and the actual position of the edge position of the wafer is sensed according to the strength of the infrared reflection intensity.
  • the number of the second detection unit 8 is multiple, and one-to-one correspondence is arranged on the end of a plurality of carrying rods 612, that is, one second detecting unit 8 is set on one carrying rod 612, wherein, the second detecting unit 8
  • the number of the second detection unit 8 and the carrying rod 612 are both two. In actual operation, as shown in FIG. 5, the ends of the two carrying rods 612 move relative to the wafer 5. When moving to the right side of the wafer 5, the two infrared emitting sensors detect the right side of the wafer 5.
  • the two edge position detection points of The carrying rod 612 continues to move toward the left side of the wafer 5, and when the end of the carrying rod 612 moves to the left side of the wafer 5, two infrared emitting sensors detect two edge position detection points on the left side of the wafer 5 .
  • the center position of the wafer 5 is determined by four edge position detection points of the wafer 5 . That is, when there is a displacement deviation after the wafer 5 is processed in the process chamber 2, the center position of the wafer 5 is re-determined by the second detection unit 8, and then the transfer unit 6 is adjusted and accurately controlled by the control unit 4. Take the center position of wafer 5.
  • an exemplary embodiment of the present disclosure provides a transfer method of a wafer transfer device, which is applied to the process of transferring a wafer 5 between the process chamber 2 and the transfer chamber 1 by the wafer transfer device.
  • the wafer transfer method of the present embodiment includes the following steps:
  • Step S100 Obtain position information between the delivery unit of the delivery device and the chamber door.
  • Step S110 Acquiring preset position information, which is used to characterize the position where the transfer unit transfers the wafer and does not interfere with the process chamber.
  • Step S120 when the position information is consistent with the preset position information, control the door of the chamber to open.
  • step S100 as shown in FIG. 1 to FIG. 5, firstly, the control unit 4 obtains the first transmission information transmitted by the first transmitting terminal 31 in the first detection unit 3, and then the control unit 4 obtains the first transmission information related to the first transmitting terminal 31.
  • the matched first receiving end 32 receives the first reception information, and then according to the first transmission information and the first reception information, the control unit 4 determines the position information between the transmission unit 6 and the chamber door 7 .
  • step S110 the preset position information of the wafer 5 is obtained, and the preset position information is used to represent the position where the transfer unit 6 transfers the wafer 5 without interfering with the process chamber 2 .
  • the preset location information can be pre-stored in the control unit 4, and can also be pre-stored on other storage devices or cloud platforms.
  • the control unit 4 communicates with the storage device or cloud platform Connection acquired.
  • step S120 the position information is compared with the preset position information by the control unit 4, and when the position information is consistent with the preset position information, the control unit 4 controls the opening of the chamber door 7 to drive the transmission unit 6
  • the wafer 5 enters the process chamber 2 , or the wafer 5 is transferred from the process chamber 2 to the transfer chamber 1 .
  • the preset position information involved in this embodiment can be a numerical range, and the position information is consistent with the preset position information, which can be understood as the difference between the position information and the preset position information is within the preset range , the location information is consistent with the preset location information.
  • the control unit 4 determines that the above information matches, it determines that the location information matches the preset location information.
  • the number of the first detection unit 3 is two, and the two first transmitting ends 31 are arranged symmetrically on both sides of the transmitting unit 6, and the two first receiving ends 32 are arranged and symmetrically arranged in the chamber On both sides of the door 7 , two first transmitting ends 31 and two first receiving ends 32 are provided in one-to-one correspondence.
  • the transfer unit 6 can proceed to the next step. For example, the transfer unit 6 drives the wafer 5 from the transfer chamber chamber 1 to process chamber 2 , or transfer unit 6 grabs wafer 5 from process chamber 2 and transfers it to transfer chamber 1 .
  • the wafer transfer method further includes the following steps:
  • Step S200 Obtain process information.
  • Step S210 According to the process information, control the transfer unit to transfer the wafer into the process chamber, or control the transfer unit to grab the wafer from the process chamber.
  • step S200 the process information is used to characterize the processing information of different process treatments of the wafer 5 during the manufacturing process.
  • the process information obtained by the control unit 6 is different, the wafer 5 needs to be sent to different Process treatment is performed in the process chamber 2 .
  • step S210 for different processes in the process, if the wafer is to be processed, the transfer unit is controlled to transfer the wafer into the process chamber. If the processing of the wafer has been completed, the transfer unit is controlled to grab the wafer from the processing chamber to facilitate subsequent processing.
  • the wafer transfer method further includes the following steps:
  • Step S300 Acquiring preset posture information of the wafer in the process chamber, where the preset posture information is used to characterize the preset position.
  • Step S310 Obtain the current position information of the wafer.
  • Step S320 Compare the current position information with the preset attitude information to determine the offset state of the wafer based on the comparison result.
  • the preset posture information may be pre-stored in the control unit. That is, the information on the accurate processing position of the wafer in the process chamber, when the wafer is at the preset position, the transfer unit can directly grab the wafer.
  • step S310 after the wafer is processed in the process chamber, due to the difference in clamping strength of the clamping tool holding the wafer in the process chamber or the gas flow and pressure of the process gas during the process, etc.
  • the reason is that the relative position of the wafer may shift after the process.
  • the current position information of the wafer after the process can be obtained by setting a detection device in the process chamber.
  • control unit 4 may compare the current position information with the preset attitude information, so as to judge the offset state of the wafer 5 based on the comparison result.
  • control unit 4 judges that the comparison result between the current position information and the preset attitude information is consistent, it is determined that the wafer has not shifted. At this time, the control unit 4 controls the transfer unit 6 to enter the process chamber 2 Grab wafer 5 in .
  • control unit 4 determines that the comparison result between the current position information and the preset attitude information is inconsistent, it determines that the wafer has been displaced, and the control unit 4 controls the transfer unit 6 to perform an adjustment operation.
  • the adjustment operation includes: determining the center of the wafer, and determining adjustment information according to the determined center of the wafer; then, controlling the transfer unit to perform the adjustment operation according to the adjustment information.
  • the detection information of the second detection unit 8 is acquired; according to the detection information, the center of the wafer is determined.
  • the second detection unit 8 includes an infrared emitting sensor.
  • the infrared emitting sensor is equipped with a light source emitting end and a light source receiving end. signal, when the sensing signal is blocked by the wafer 5, the sensing signal is reflected and received by the light source receiving end, and the actual position of the edge position of the wafer is sensed according to the strength of the infrared reflection intensity.
  • the number of the second detection unit 8 is multiple, and one-to-one correspondence is arranged on the end of a plurality of carrying rods 612, that is, one second detecting unit 8 is set on one carrying rod 612, wherein, the second detecting unit 8
  • the number of the second detection unit 8 and the carrying rod 612 are both two. In actual operation, as shown in FIG. 5, the ends of the two carrying rods 612 move relative to the wafer 5. When moving to the right side of the wafer 5, the two infrared emitting sensors detect the right side of the wafer 5.
  • the two edge position detection points of The carrying rod 612 continues to move toward the left side of the wafer 5, and when the end of the carrying rod 612 moves to the left side of the wafer 5, two infrared emitting sensors detect two edge position detection points on the left side of the wafer 5 .
  • the center position of the wafer 5 is determined by four edge position detection points of the wafer 5 . That is, when there is a displacement deviation after the wafer 5 is processed in the process chamber 2, the center position of the wafer 5 is re-determined by the second detection unit 8, and then the transfer unit 6 is adjusted and accurately controlled by the control unit 4. Take the center position of wafer 5.
  • the transfer method of the wafer transfer device in this embodiment is simple to operate, can effectively improve the transfer accuracy of the wafer between the process chamber and the transfer chamber, reduce the damage rate during the wafer transfer process, and at the same time, can effectively improve the wafer transfer accuracy. production efficiency.
  • an exemplary embodiment of the present disclosure provides a wafer transfer control device, which is applied to the process of transferring a wafer 5 between a process chamber 2 and a transfer chamber 1 by a wafer transfer device.
  • the device includes: an acquisition module 100 , a processing module 200 and a control module 300 , wherein the control module 30 is electrically connected to the acquisition module 100 and the processing module 200 respectively.
  • the obtaining module 100 is used to obtain position information between the transfer unit and the chamber door, and is also used to obtain preset position information, and the preset position information is used to indicate that the transfer unit will not transfer wafers with the process chamber. the location of the interference;
  • the processing module 200 determines whether the location information is consistent with the preset location information
  • control module 300 is configured to control the opening of the chamber door when the position information is consistent with the preset position information.
  • the wafer transfer control device of this embodiment has a simple structural design and is easy to operate. During use, it can effectively improve the transfer accuracy of the wafer between the process chamber and the transfer chamber, and reduce the damage rate during the wafer transfer process. At the same time, the production efficiency of the wafer can be effectively improved.
  • the wafer transfer device by setting the first detection unit on the chamber door and the transfer unit between the transfer chamber and the process chamber, the wafer transfer rate can be effectively improved.
  • the round transmission accuracy and transmission efficiency reduce the damage rate during the wafer transmission process.

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Abstract

一种晶圆传送装置、传送方法和晶圆传送控制装置，晶圆传送装置包括传送腔室、至少一个工艺腔室、第一检测单元和控制单元，传送腔室内设有传送单元；至少一个工艺腔室与传送腔室相连通，且在相连通的位置处设有腔室门；第一检测单元包括第一发射端和第一接收端，第一发射端设置于传送单元和腔室门两者之一，第一接收端设置于传送单元和腔室门两者另一；控制单元用于确定传送单元与腔室门之间的位置信息，并控制传送单元移动，以及控制腔室门打开或关闭。

Description

晶圆传送装置、传送方法和晶圆传送控制装置
本公开基于申请号为202110943242.4，申请日为2021年08月17日，申请名称为“晶圆传送装置、传送方法和晶圆传送控制装置”的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本公开作为参考。
技术领域
本公开涉及但不限于一种晶圆传送装置、传送方法和晶圆传送控制装置。
背景技术
半导体结构中的晶圆在制程过程中，需要在传送腔室和各个工艺腔室之间进行传送，其中传送腔室与工艺腔室之间具有能够封闭或开启的腔室门。
在晶圆传送过程中，晶圆的传送位置会发生偏移，位置偏移误差越来越大，导致晶圆触碰腔室门出现破损的问题，产品不良率较高。
发明内容
以下是对本公开详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开提供了一种晶圆传送装置、传送方法和晶圆传送控制装置。
本公开实施例的第一方面提供了一种传送装置，所述晶圆传送装置包括：
传送腔室，所述传送腔室内设有用于传送晶圆的传送单元；
至少一个工艺腔室，用于所述晶圆的工艺处理，所述至少一个工艺腔室与所述传送腔室相连通，且在相连通的位置处设置有腔室门；
第一检测单元，用于检测所述传送单元与所述腔室门之间的位置信息，所述第一检测单元包括第一发射端和第一接收端，其中，所述第一 发射端设置于所述传送单元和所述腔室门两者之一，所述第一发射端设置于所述传送单元和所述腔室门两者另一；
控制单元，分别与所述第一检测单元、所述传送单元和所述腔室门电连接，所述控制单元用于确定所述传送单元与所述腔室门之间的位置信息，并控制所述传送单元移动，以及控制所述腔室门打开或关闭。
本公开实施例的第二方面提供了一种晶圆传送方法，应用于晶圆传送装置在工艺腔室和传送腔室之间传送晶圆的过程，所述晶圆传送方法包括：
获取所述传送装置的传送单元和腔室门之间的位置信息；
获取预设位置信息，所述预设位置信息用于表征所述传送单元传送晶圆不会与所述工艺腔室发生干涉的位置；
所述位置信息与所述预设位置信息一致时，控制所述腔室门开启。
本公开实施例的第三方面提供了一种晶圆传送控制装置，应用于晶圆传送装置在工艺腔室和传送腔室之间传送晶圆的过程，所述控制装置包括：
获取模块，用于获取传送单元和腔室门之间的位置信息；
所述获取模块还用于获取预设位置信息，所述预设位置信息用于表征所述传送单元传送晶圆不会与工艺腔室发生干涉的位置；
处理模块，用于判断所述位置信息与所述预设位置信息是否一致；
控制模块，用于当所述位置信息与所述预设位置信息一致时，控制所述腔室门开启。
本公开实施例所提供的晶圆传送装置、传送方法和晶圆传送控制装置中，第一检测单元包括第一发射端和第一接收端，通过将第一发射端设在传送腔室和工艺腔室之间的腔室门和传送单元两者之一，第一接收端上设在腔室门和传送单元两者另一，通过设置第一检测单元在晶圆传送过程中进行位置检测，及时对晶圆的位置进行纠偏，从而有效提高晶圆的传送精度，降低晶圆传送过程中的破损率。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实 施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是根据一示例性实施例示出的一种晶圆传送装置的示意图。
图2是根据一示例性实施例示出的一种晶圆传送装置中传送单元的示意图。
图3是根据一示例性实施例示出的一种晶圆传送装置中第一检测单元的位置示意图。
图4是根据一示例性实施例示出的一种晶圆传送装置中承载部以及第二检测单元的位置的示意图。
图5是根据一示例性实施例示出的一种晶圆传送装置中第二检测单元检测晶圆中心的示意图。
图6是根据一示例性实施例示出的一种晶圆传送方法的流程示意图。
图7是根据一示例性实施例示出的一种晶圆传送控制装置的示意图。
附图标记：
1、传送腔室；2、工艺腔室；
3、第一检测单元；4、控制单元；
5、晶圆；6、传送单元；
7、腔室门；8、第二检测单元；
31、第一发射端；32、第一接收端；
61、承载部；62、传送组件；
100、获取模块；200、处理模块；
300、控制模块；611、承载本体；
612、承载杆。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本 公开中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。需要说明的是，在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
半导体结构中的晶圆在制程过程中，可以通过机械手臂来实现晶圆在传送腔室和工艺腔室之间完成传送，在传送腔室与工艺腔室之间具有能够封闭或开启的腔室门。其中，机械手臂在使用过程中需要进行校准，但操作者每次校准的程度会有一定的差异。并且随着机械手臂的老化，机械手臂在抓取晶圆过程中会存在累计误差，这样会导致晶圆在传送过程中发生偏移，导致晶圆碰触腔室门而造成破损，降低产品良率。
同时，晶圆在工艺腔室中进行相应的工艺处理时，由于机械手臂在工艺腔室内夹取晶圆的力度不同，或者，工艺处理过程中用于对晶圆进行处理的气流和气体压力等作用在晶圆上，容易造成晶圆在制程过程中发生偏移，导致机械手臂无法准确抓取到晶圆。即便机械手臂在工艺腔室内抓取到晶圆，但只有当机械手臂返回传送腔室时才会显示晶圆发生了偏移，机台发出警报，还需要对偏移后的晶圆进行位置校正才可以进行下一步处理工艺，降低了生产效率。
本公开实施例所提供的晶圆传送装置、传送方法和晶圆传送控制装置中，第一检测单元包括第一发射端和第一接收端，通过将第一发射端设在传送腔室和工艺腔室之间的腔室门和传送单元两者之一，第一接收端上设在腔室门和传送单元两者另一，通过设置第一检测单元在晶圆传送过程中进行位置检测，及时对晶圆的位置进行纠偏，从而有效提高晶圆的传送精度，降低晶圆传送过程中的破损率。
本公开示例性的实施例中提供了一种晶圆传送装置，如图1所示，图1示出了根据本公开一示例性的实施例提供的晶圆传送装置的示意图。图2为晶圆传送装置中传送单元的示意图。图3为晶圆传送装置中第一检测单元的位置示意图。图4为晶圆传送装置中承载部以及第二检测单元的位置的示意图。图5为晶圆传送装置中第二检测单元检测晶圆中心的示意图。下面结合图1-图5对晶圆传送装置进行介绍。
如图1所示，本公开一示例性的实施例提供的一种晶圆传送装置，该晶圆传送装置包括：传送腔室1、至少一个工艺腔室2、第一检测单元3和控制 单元4。
其中，工艺腔室2通常在真空状态下进行工作，晶圆在加工前后都处于正常大气压环境下，晶圆在进入到工艺腔室2之前，会先进入到传送腔室1中，传送腔室1作为正常大气压环境与真空状态之间的中间过渡通道，用于临时放置待传送的晶圆5。其中，在传送腔室1内设有传送单元6，该传送单元6用于在传送腔室1和工艺腔室2之间传送晶圆5。
在一些实施例中，传送单元6可以包括机械手臂。当传送腔室1对应不同数量的工艺腔室时，可以采用单臂机械手或者双臂机械手。例如，当一个传送腔室1对应一个或两个工艺腔室时，传送单元6可以选用单臂机械手。当一个传送腔室1的外周设有两个以上的工艺腔室时，传送单元可以采用双臂机械手，以提高晶圆的传送效率和生产效率。在本公开实施例中，传送单元6选用双臂机械手。
示例性地，在传送腔室1的外周设有至少一个工艺腔室2。至少一个工艺腔室2用于完成晶圆5在制程过程中的不同工艺处理过程。
工艺腔室2和传送腔室1之间相连通，便于传送单元6在工艺腔室2和传送腔室1之间对晶圆5进行传送。在工艺腔室2和传送腔室1相连通的位置处设置有腔室门7，该腔室门7用于当晶圆完全进入工艺腔室2或传送腔室1后关闭，以使工艺腔室2或传送腔室1处于封闭状态，而该腔室门7的开启或关闭可以通过程序实现自动控制，也可以通过人工手动控制。
为了提高晶圆的传送精度，降低晶圆在传送过程中的破损率，在晶圆传送装置中设置有第一检测单元3。第一检测单元3用于检测传送单元6与腔室门7之间的位置信息，该位置信息用于表征传送单元6抓取晶圆5的端部在进入工艺腔室2时，晶圆5的端部是否与腔室门7相对应。当晶5的端部与腔室门7相对应时，腔室门7打开，此时由传送单元6将晶圆5从工艺腔室2中抓取晶圆5并传送至传送腔室1内；或者，由传送单元6将晶圆5从传送腔室1传送至工艺腔室2中。
参照图3所示，第一检测单元3包括第一发射端31和第一接收端32。第一发射端31设置于传送单元6和腔室门7两者之一，第一接收端32设置于传送单元6和腔室门7两者另一。即，当第一发射端31设在传 送单元6上时，第一接收端32设在腔室门7上；或者，当第一发射端31设在腔室门7上时，第一接收端32设在传送单元6上。
在本实施例中，第一发射端31包括红外发射器，第一接收端32包括红外接收器。第一检测单元3的个数为两个。两个第一发射端31对称设置在传送单元6上，且两个第一发射端31布设在晶圆5的两侧，两个第一接收端32对称设置在腔室门7上，用于定位传送单元6的中心点。其中，两个第一发射端31与两个第一接收端32一一对应设置，即一个第一发射端31对应一个第一接收端32。且在传送单元6转动过程中，只有当两个第一接收端32同时接收到两个第一发射端31发射出的发射信号后，腔室门7才能被打开，此时，传送单元6将晶圆5传送至传送工艺腔室2中，或者，传送单元6将晶圆5从工艺腔室2中取出，从而有效降低晶圆传送过程中因碰触到腔室门后导致破损情况的发生概率。当然，可以解决的是，对于第一发射端31和第一接收端32的数量本公开不做具体限定。比如，第一发射端31和第一接收端32的数量可以各为一个；再比如，第一发射端31和第一接收端32的数量各位三个，且一一对应设置。
在一些可能的实施例中，在晶圆传送装置中还包括控制单元4，该控制单元4分别与第一检测单元3、传送单元6和腔室门7电连接。控制单元4用于确定传送单元6和腔室门7之间的位置信息，并通过该位置信息来控制传送单元6移动，以及控制腔室门7的打开或关闭。
本实施例中，通过将第一发射端设在传送腔室和工艺腔室之间的腔室门和传送单元两者之一，第一接收端上设在腔室门和传送单元两者另一，当第一发射端与第一接收端完全相对应时，控制单元控制腔室门打开，通过设置第一检测单元在晶圆传送过程中进行位置检测，及时对晶圆的位置进行纠偏，从而有效提高晶圆的传送精度，降低晶圆传送过程中的破损率。
在一些实施例中，如图2所示，传送单元6包括用于承载晶圆5的承载部61和传送组件62。
参照图2和图4所示，传送组件62与承载部61连接，用于带动承载部61在传送腔室1和工艺腔室2之间移动。传送组件62可以包括底座、设在底座上的升降结构、与升降结构连接的移动结构、与移动结构连接 的旋转结构，旋转结构与承载部61转动连接。其中，升降结构用于带动移动结构沿竖直方向运动，移动结构用于带动旋转结构沿水平方向移动，承载部61可跟随旋转结构一同沿水平方向移动。同时，承载部61与旋转结构之间能够相对旋转。
参照图2和图3所示，承载部61包括承载本体611和设在承载本体611上间隔设置的多个承载杆612。多个承载杆612并排且间隔设置，多个承载杆612构成用于承载晶圆5的承载区域。在本实施例中，承载本体611上设置有两个第一发射端31，两个第一发射端31分设在承载区域的两侧，两个第一发射端31对称设置。
为了能够支撑第一发射端31以及晶圆5的重量，防止传送单元6在运动过程中晃动，在一些实施例中，传送组件62的材料选用碳纤维材料制成，以强化传送组件62的结构强度。而承载本体611和承载杆612的材料采用陶瓷材料，例如Al2O3或SiC等陶瓷材料，此类陶瓷材料机械强度高、耐磨性好，减少了对晶圆的磨损。采用陶瓷材料制备承载本体和承载杆耐磨性好，因此，在于晶圆接触过程中不易产生磨损废料，解决了磨损废料划伤晶圆表面的问题，同时，还延长了承载部的使用寿命。
根据一个示例性的实施例，如图4和图5所示，本公开实施例的晶圆传送装置还包括与控制单元4电连接的第二检测单元8，第二检测单元8设置在承载杆612的远离承载本体611的端部上。
第二检测单元8包括红外发射感应器，该红外发射感应器具备有光源发射端和光源接收端，光源发射端和光源接收端均设在承载杆612的端部，光源发射端用于发射感应信号，当该感应信号被晶圆5遮挡后，感应信号被反射并由光源接收端接收，根据红外反射强度的强弱程度，来感应晶圆的边缘位置的实际位置。
其中，第二检测单元8的个数为多个，且一一对应设置在多个承载杆612的端部，即一个承载杆612上设置一个第二检测单元8，其中，第二检测单元8在采用红外线发射感应器时，该红外发射感应器的光源发射端和光源接收端均设置在承载杆612的端部。在一个实施例中，第二检测单元8和承载杆612的个数均为两个。在实际操作中，参照图5所示，两个承载杆612的端部相对于晶圆5移动，当移动到晶圆5的右侧时，两个红 外线发射感应器检测到晶圆5右侧的两个边缘位置检测点。承载杆612继续朝向晶圆5的左侧移动，当承载杆612的端部移动到晶圆5的左侧时，两个红外线发射感应器检测到晶圆5左侧的两个边缘位置检测点。通过晶圆5的四个边缘位置检测点来确定晶圆5的中心位置。即，当晶圆5在工艺腔室2中经过工艺处理后存在位移偏差时，通过第二检测单元8来重新确定晶圆5的中心位置，然后通过控制单元4调整并准确控制传送单元6抓取晶圆5的中心位置。
在本实施中，通过在每个承载杆的端部均安装一个第二检测单元，从而在抓取晶圆之前就完成对晶圆偏移的位置校正，以使传送单元精准抓取晶圆的中心位置，有效避免因晶圆偏移引起机台警报，提高了生产效率。
如图6所示，本公开一示例性的实施例提供一种晶圆传送装置的传送方法，应用于晶圆传送装置在工艺腔室2和传送腔室1之间传送晶圆5的过程。其中，本实施例的晶圆传送方法包括以下步骤：
步骤S100：获取传送装置的传送单元和腔室门之间的位置信息。
步骤S110：获取预设位置信息，预设位置信息用于表征传送单元传送晶圆不会与工艺腔室发生干涉的位置。
步骤S120：位置信息与预设位置信息一致时，控制腔室门开启。
在步骤S100中，结合图1至图5所示，首先，由控制单元4获取第一检测单元3中的第一发射端31发射第一发射信息，然后控制单元4获取与第一发射端31匹配的第一接收端32接收到的第一接收信息，而后根据第一发射信息和第一接收信息，通过控制单元4来确定传送单元6和腔室门7之间的位置信息。
在步骤S110中，获取晶圆5的预设位置信息，预设位置信息用于表征传送单元6传送晶圆5不会与工艺腔室2发生干涉的位置。预设位置信息可以是预先储存在控制单元4中的，也可以预先存储在其他存储装置或云平台上，当控制单元4需要使用预设位置信息时，控制单元4与存储装置或云平台通信连接获取。
在步骤S120中，通过控制单元4来对位置信息和预设位置信息进行比对，当位置信息和预设位置信息相一致时，控制单元4控制腔室门7打开， 以通过传送单元6带动晶圆5进入工艺腔室2中，或者将晶圆5从工艺腔室2中转移至传送腔室1中。在此，本实施例中涉及到的预设位置信息可以是一个数值范围，则位置信息与预设位置信息相一致可以理解为位置信息与预设位置信息之间的差值在预设范围内时，位置信息就与预设位置信息一致。
其中，在本实施例中，首先判断多个第一接收端32接收到的第一接收信息是否与其匹配的多个第一发射端31发射的第一发射信息相匹配。当控制单元4判断到上述信息相匹配时，则判定位置信息与预设位置信息相匹配。在一个实施例中，第一检测单元3的个数为两个，且两个第一发射端31对称设在传送单元6的两侧，两个第一接收端32布置并对称设在腔室门7的两侧，两个第一发射端31与两个第一接收端32一一对应设置。在实际操作中，当两个第一接收端32同时接收到两个第一发射端31的发射信号后，传送单元6才可进行下一步动作，例如，传送单元6带动晶圆5从传送腔室1中转移至工艺腔室2中，或者传送单元6从工艺腔室2中抓取晶圆5并转移至传送腔室1中。
根据一个示例性的实施例，在步骤S120之后，晶圆传送方法还包括以下步骤：
步骤S200：获取工艺信息。
步骤S210：根据工艺信息，控制传送单元传送晶圆至工艺腔室内，或者，控制传送单元从工艺腔室中抓取晶圆。
示例性地，在步骤S200中，工艺信息用于表征晶圆5在制程过程中的不同工艺处理的处理信息，控制单元6获取到的工艺信息不同时，需要将晶圆5送入至不同的工艺腔室2中进行工艺处理。
示例性地，在步骤S210中，对于工艺制程中的不同过程，如果是要对晶圆进行工艺处理，则控制传送单元传送晶圆至工艺腔室内。如果已经完成了对晶圆的工艺处理，则控制传送单元从工艺腔室中抓取晶圆，方便进行后续工艺处理。
根据一个示例性的实施例，在步骤S300之后，获取工艺信息的步骤之前，晶圆传送方法还包括以下步骤：
步骤S300：获取晶圆在工艺腔室内的预设姿态信息，预设姿态信息用于表征预设位置。
步骤S310：获取晶圆的当前位置信息。
步骤S320：将当前位置信息与预设姿态信息进行比对，以基于比对结果判断晶圆的偏移状态。
示例性地，在步骤S300中，预设姿态信息可以是预先储存在控制单元中的。即，晶圆在工艺腔室中处于准确的加工位置上的信息，当晶圆处于预设位置时，传送单元可以直接抓取晶圆。
示例性地，在步骤S310中，晶圆在工艺腔室中经过工艺处理之后，因工艺腔室内夹持晶圆的夹持工具的夹取力度的不同或者工艺处理中处理气体的气流和压力等原因，晶圆在工艺处理后可能会发生相对位置的偏移，此时，可通过在工艺腔室内设置检测装置，来获取晶圆在工艺处理后的当前位置信息。
示例性地，在步骤S320中，可通过控制单元4将当前位置信息与预设姿态信息进行比对，以基于比对结果判断晶圆5的偏移状态。
其中，在该步骤中，若控制单元4判定当前位置信息与预设姿态信息的比对结果一致，则判定晶圆未发生偏移，此时，控制单元4控制传送单元6进入工艺腔室2中抓取晶圆5。
若控制单元4判定当前位置信息与预设姿态信息的比对结果不一致，则判定晶圆发生位移，控制单元4控制传送单元6执行调整操作。
调整操作包括：确定晶圆的中心，并根据确定后的晶圆的中心确定调整信息；然后，根据调整信息，控制传送单元执行调整操作。
其中，在确定晶圆的中心过程中，即，在传送单元6抓取晶圆5过程中，获取第二检测单元8的检测信息；根据检测信息，确定晶圆的中心。
第二检测单元8包括红外发射感应器，该红外发射感应器具备有光源发射端和光源接收端，光源发射端和光源接收端均设在承载杆612的端部，光源发射端用于发射感应信号，当该感应信号被晶圆5遮挡后，感应信号被反射并由光源接收端接收，根据红外反射强度的强弱程度，来感应晶圆的边缘位置的实际位置。
其中，第二检测单元8的个数为多个，且一一对应设置在多个承载杆612的端部，即一个承载杆612上设置一个第二检测单元8，其中，第二检测单元8在采用红外线发射感应器时，该红外发射感应器的光源发射端 和光源接收端均设置在承载杆612的端部。在一个实施例中，第二检测单元8和承载杆612的个数均为两个。在实际操作中，参照图5所示，两个承载杆612的端部相对于晶圆5移动，当移动到晶圆5的右侧时，两个红外线发射感应器检测到晶圆5右侧的两个边缘位置检测点。承载杆612继续朝向晶圆5的左侧移动，当承载杆612的端部移动到晶圆5的左侧时，两个红外线发射感应器检测到晶圆5左侧的两个边缘位置检测点。通过晶圆5的四个边缘位置检测点来确定晶圆5的中心位置。即，当晶圆5在工艺腔室2中经过工艺处理后存在位移偏差时，通过第二检测单元8来重新确定晶圆5的中心位置，然后通过控制单元4调整并准确控制传送单元6抓取晶圆5的中心位置。
本实施例的晶圆传送装置的传送方法操作简单，能有效提高晶圆在工艺腔室和传送腔室之间的传送精度，降低晶圆传送过程中的破损率，同时，能有效提高晶圆的生产效率。
如图7所示，本公开一示例性的实施例提供一种晶圆传送控制装置，应用于晶圆传送装置在工艺腔室2和传送腔室1之间传送晶圆5的过程，该控制装置包括：获取模块100、处理模块200和控制模块300，其中，控制模块30分别与获取模块100和处理模块200电连接。
示例性地，获取模块100用于获取传送单元和腔室门之间的位置信息，以及还用于获取预设位置信息，预设位置信息用于表征传送单元传送晶圆不会与工艺腔室发生干涉的位置；
示例性地，处理模块200于判断位置信息与预设位置信息是否一致；
示例性地，控制模块300用于当位置信息与预设位置信息一致时，控制腔室门开启。
本实施例的晶圆传送控制装置，结构设计简单，便于操作，在使用过程中能有效提高晶圆在工艺腔室和传送腔室之间的传送精度，降低晶圆传送过程中的破损率，同时，能有效提高晶圆的生产效率。
本说明书中各实施例或实施方式采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分相互参见即可。
在本说明书的描述中，参考术语“实施例”、“示例性的实施例”、“一些 实施方式”、“示意性实施方式”、“示例”等的描述意指结合实施方式或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施方式或示例中。
在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
在本公开的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
可以理解的是，本公开所使用的术语“第一”、“第二”等可在本公开中用于描述各种结构，但这些结构不受这些术语的限制。这些术语仅用于将第一个结构与另一个结构区分。
在一个或多个附图中，相同的元件采用类似的附图标记来表示。为了清楚起见，附图中的多个部分没有按比例绘制。此外，可能未示出某些公知的部分。为了简明起见，可以在一幅图中描述经过数个步骤后获得的结构。在下文中描述了本公开的许多特定的细节，例如器件的结构、材料、尺寸、处理工艺和技术，以便更清楚地理解本公开。但正如本领域技术人员能够理解的那样，可以不按照这些特定的细节来实现本公开。
最后应说明的是：以上各实施例仅用以说明本公开的技术方案，而非对其限制；尽管参照前述各实施例对本公开进行了详细的说明，本领域技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。
工业实用性
本公开实施例所提供的晶圆传送装置、传送方法和晶圆传送控制装置中，通过在传送腔室和工艺腔室之间的腔室门以及传送单元上设置第一检测单元，有效提高晶圆的传送精度、传送效率，降低了晶圆传送过程中的破损率。

Claims (17)

  1. 一种晶圆传送装置，包括：
    传送腔室，所述传送腔室内设有用于传送晶圆的传送单元；
    至少一个工艺腔室，用于所述晶圆的工艺处理，所述至少一个工艺腔室与所述传送腔室相连通，且在相连通的位置处设置有腔室门；
    第一检测单元，用于检测所述传送单元与所述腔室门之间的位置信息，所述第一检测单元包括第一发射端和第一接收端，其中，所述第一发射端设置于所述传送单元和所述腔室门两者之一，所述第一发射端设置于所述传送单元和所述腔室门两者另一；
    控制单元，分别与所述第一检测单元、所述传送单元和所述腔室门电连接，所述控制单元用于确定所述传送单元与所述腔室门之间的位置信息，并控制所述传送单元移动，以及控制所述腔室门打开或关闭。
  2. 根据权利要求1所述的晶圆传送装置，其中，所述传送单元包括：
    承载部，用于承载所述晶圆；
    传送组件，与所述承载部连接，用于带动所述承载部在所述传送腔室和所述工艺腔室之间移动。
  3. 根据权利要求2所述的晶圆传送装置，其中，所述传送组件的材料包括碳纤维材料。
  4. 根据权利要求2所述的晶圆传送装置，其中，所述承载部包括承载本体以及设置在所述承载本体上间隔设置的多个承载杆，所述承载杆用于承载所述晶圆。
  5. 根据权利要求4所述的晶圆传送装置，其中，所述晶圆传送装置还包括与所述控制单元电连接的第二检测单元，所述第二检测单元设置于所述承载杆的远离所述承载本体的端部。
  6. 根据权利要求5所述的晶圆传送装置，其中，所述第二检测单元包括红外发射感应器。
  7. 根据权利要求4所述的晶圆传送装置，其中，所述承载本体和所述承载杆的材料包括陶瓷材料。
  8. 根据权利要求1-7任一项所述的晶圆传送装置，其中，所述第一发射端包括红外发射器，所述第一接收端包括红外接收器。
  9. 一种晶圆传送方法，应用于晶圆传送装置在工艺腔室和传送腔室之间传送晶圆的过程，其中，所述晶圆传送方法包括：
    获取所述传送装置的传送单元和腔室门之间的位置信息；
    获取预设位置信息，所述预设位置信息用于表征所述传送单元传送晶圆不会与所述工艺腔室发生干涉的位置；
    所述位置信息与所述预设位置信息一致时，控制所述腔室门开启。
  10. 根据权利要求9所述的晶圆传送方法，其中，所述控制所述腔室门开启的步骤之后，所述晶圆传送方法还包括：
    获取工艺信息；
    根据所述工艺信息，控制所述传送单元传送所述晶圆至所述工艺腔室内，或者，控制所述传送单元从所述工艺腔室中抓取所述晶圆。
  11. 根据权利要求9所述的晶圆传送方法，其中，所述获取所述传送装置的传送单元与腔室门之间的位置信息的步骤中，包括：
    获取第一检测单元的第一发射端发射的第一发射信息；
    获取与所述第一发射端匹配的第一检测单元的第一接收端接收的第一接收信息；
    根据所述第一发射信息和所述第一接收信息，确定所述传送装置的传送单元与腔室门之间的位置信息。
  12. 根据权利要求11所述的晶圆传送方法，其中，判定所述位置信息与所述预设位置信息一致的方法，包括：
    判断多个所述第一接收端接收到的所述第一接收信息是否与其匹配的多个所述第一发射端发射的第一发射信息相匹配；
    若是，所述位置信息与所述预设位置信息一致。
  13. 根据权利要求9-12任一项所述的晶圆传送方法，其中，所述控制所述腔室门开启的步骤之后，所述晶圆传送方法还包括：
    获取所述晶圆在所述工艺腔室内的预设姿态信息，所述预设姿态信息用于表征预设位置；
    获取所述晶圆的当前位置信息；
    将所述当前位置信息与所述预设姿态信息进行比对，以基于比对结果判断所述晶圆的偏移状态。
  14. 根据权利要求13所述的晶圆传送方法，其中，所述将所述当前位置信息与所述预设位置信息进行对比，以基于比对结果判断所述晶圆的偏移状态的步骤中，包括：
    若所述当前位置信息与所述预设姿态信息的比对结果一致，则判定所述晶圆未发生偏移，所述传送单元抓取所述晶圆；
    若所述当前位置信息与所述预设姿态信息的比对结果不一致，则判定所述晶圆发生位移，控制所述传送单元执行调整操作。
  15. 根据权利要求14所述的晶圆传送方法，其中，所述判定所述晶圆发生偏移，控制所述传送单元执行调整操作，包括：
    确定所述晶圆的中心，并根据确定后的所述晶圆的中心确定调整信息；
    根据所述调整信息，控制所述传送单元执行调整操作。
  16. 根据权利要求15所述的晶圆传送方法，其中，所述确定所述晶圆的中心，包括：
    在所述传送单元抓取所述晶圆过程中，获取第二检测单元的检测信息；
    根据所述检测信息，确定所述晶圆的中心。
  17. 一种晶圆传送控制装置，应用于晶圆传送装置在工艺腔室和传送腔室之间传送晶圆的过程，其中，所述控制装置包括：
    获取模块，用于获取传送单元和腔室门之间的位置信息；
    所述获取模块还用于获取预设位置信息，所述预设位置信息用于表征所述传送单元传送晶圆不会与工艺腔室发生干涉的位置；
    处理模块，用于判断所述位置信息与所述预设位置信息是否一致；
    控制模块，用于当所述位置信息与所述预设位置信息一致时，控制所述腔室门开启。
PCT/CN2021/116879 2021-08-17 2021-09-07 晶圆传送装置、传送方法和晶圆传送控制装置 WO2023019656A1 (zh)

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