WO2023019522A1 - Procédé de transfert de masse de puce de del, panneau d'affichage et appareil d'affichage - Google Patents

Procédé de transfert de masse de puce de del, panneau d'affichage et appareil d'affichage Download PDF

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Publication number
WO2023019522A1
WO2023019522A1 PCT/CN2021/113592 CN2021113592W WO2023019522A1 WO 2023019522 A1 WO2023019522 A1 WO 2023019522A1 CN 2021113592 W CN2021113592 W CN 2021113592W WO 2023019522 A1 WO2023019522 A1 WO 2023019522A1
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WO
WIPO (PCT)
Prior art keywords
growth substrate
led chip
conductive adhesive
adhesive layer
led chips
Prior art date
Application number
PCT/CN2021/113592
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English (en)
Chinese (zh)
Inventor
翟峰
萧俊龙
蔡明达
Original Assignee
重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2021/113592 priority Critical patent/WO2023019522A1/fr
Publication of WO2023019522A1 publication Critical patent/WO2023019522A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present application relates to the field of display technology, in particular to a mass transfer method of LED chips, a display panel and a display device having the display panel.
  • Micro Light Emitting Diode (Micro Light Emitting Diode, Micro LED) is a new generation of display technology. Compared with traditional LEDs, it has higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption, and it can also be combined with flexible panels to achieve flexibility. show. With the maturity of the manufacturing process and the decline of prices, there have been more and more related products based on Micro LED chips in recent years.
  • the Micro LED display panel includes sub-pixel rendering of multiple pixel areas (Subpixel Rendering, SPR), each pixel region SPR includes a first LED chip, a second LED chip and a third LED chip.
  • the first LED chip, the second LED chip and the third LED chip need to be transferred from their respective growth substrates to the display backplane.
  • this will lead to the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by the laser and transferred to the display backplane.
  • the purpose of this application is to provide a method for mass transfer of LED chips, a display panel and a display device with the display panel, which aims to solve the problems existing in the prior art due to the growth of the display panel.
  • a certain distance must be kept between the substrate and the display backplane, which leads to the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by the laser and transferred to the display backplane.
  • a method for mass transfer of LED chips comprising: providing a display backplane, setting a non-conductive adhesive layer on one side of the display backplane; providing a first growth substrate, and placing multiple A first LED chip is transferred to the non-conductive adhesive layer, and the first LED chip is electrically connected to the display backplane; a second growth substrate is provided, and a plurality of second growth substrates on the second growth substrate are provided. Transfer the LED chip to the non-conductive adhesive layer, electrically connect the second LED chip to the display backplane; provide a third growth substrate, and transfer a plurality of third LED chips on the third growth substrate To the non-conductive adhesive layer, the third LED chip is electrically connected to the display backplane.
  • the mass transfer method of LED chips of the present application solves the problem of LED chips on the growth substrate being peeled off by laser and transferred to the display backplane by coating a non-conductive adhesive layer on the display backplane.
  • the chip has the problem of offset, so not only the yield rate of the LED chip is improved, but also the effect of improving the transfer efficiency of the LED chip is achieved.
  • the electrical connection includes: providing a first growth substrate, setting a plurality of first LED chips on the side of the first growth substrate facing the non-conductive adhesive layer; peeling the first LED chip onto the non-conductive adhesive layer, and removing the first growth substrate; pressing the first LED chip on the non-conductive adhesive layer, so that The first LED chip and the solder on the display backplane realize metal eutectic bonding; welding the first LED chip and the solder on the display backplane to complete the transfer of the first LED chip .
  • providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and bonding the second LED chips to the display backplane The electrical connection includes: providing a second growth substrate, setting a plurality of second LED chips on the side of the second growth substrate facing the non-conductive adhesive layer; The second LED chip is peeled off from the non-conductive adhesive layer, and the second growth substrate is removed; the second LED chip on the non-conductive adhesive layer is pressed, so that The second LED chip and the solder on the display backplane realize metal eutectic bonding; welding the second LED chip and the solder on the display backplane to complete the transfer of the second LED chip .
  • providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and bonding the second LED chips to the display backplane The electrical connection includes: providing a third growth substrate, adhering a plurality of third LED chips on the side of the third growth substrate facing the non-conductive adhesive layer; placing a preset position on the third growth substrate Peel off the third LED chip on the non-conductive adhesive layer, and remove the third growth substrate; press-bond the third LED chip on the non-conductive adhesive layer, to making the third LED chip and the solder on the display backplane achieve metal eutectic bonding; welding the third LED chip and the solder on the display backplane to complete the bonding of the third LED chip transfer.
  • the peeling off the first LED chip at the preset position on the first growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the first LED chip on the first growth substrate.
  • the first LED chip at the preset position is laser lifted from the first growth substrate, wherein the wavelength of the laser is 248nm or 266nm.
  • the peeling off the second LED chip at the preset position on the second growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the second LED chip on the second growth substrate.
  • the second LED chip at the preset position is laser lifted off from the second growth substrate, wherein the wavelength of the laser is 248nm or 266nm.
  • the peeling off the third LED chip at the preset position on the third growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the third LED chip on the third growth substrate.
  • the third LED chip at the preset position is laser lifted off from the third growth substrate, wherein the wavelength of the laser is 248nm or 266nm.
  • the pressing the first LED chip on the non-conductive adhesive layer includes: using a pressing tool at a preset temperature and a preset weight toward the display The direction of the back plate presses the first LED chip on the non-conductive adhesive layer.
  • the pressing of the second LED chip on the non-conductive adhesive layer includes: using a pressing tool to target the LED chip at the preset temperature and the preset weight Pressing the second LED chip on the non-conductive adhesive layer along the direction of the display backplane.
  • the pressing the third LED chip on the non-conductive adhesive layer includes: using a pressing tool to target the LED chip at the preset temperature and the preset weight. Pressing the third LED chip on the non-conductive adhesive layer along the direction of the display backplane.
  • the pressing tool is a soft pressing plate.
  • the pressing tool is made of polydimethylsiloxane or polyurethane material.
  • the preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.
  • the display backplane is a thin film field effect transistor backplane.
  • the non-conductive adhesive layer is made of non-conductive adhesive.
  • the non-conductive adhesive layer is coated on one side of the display backplane, and cured to remove the solvent.
  • the curing removes the solvent by heating and curing.
  • the first LED chip, the second LED chip and the third LED chip are respectively different red LED chips, green LED chips or blue LED chips.
  • the mass transfer method of LED chips of the present application solves the problem of LED chips on the growth substrate being peeled off by laser and transferred to the display backplane by coating a non-conductive adhesive layer on the display backplane.
  • the chip has the problem of offset, so not only the yield rate of the LED chip is improved, but also the effect of improving the transfer efficiency of the LED chip is achieved.
  • the present application also provides a display panel, which includes the above-mentioned display backplane and the first LED chip, the second LED chip and the first LED chip transferred to the display backplane by the mass transfer method.
  • a display panel which includes the above-mentioned display backplane and the first LED chip, the second LED chip and the first LED chip transferred to the display backplane by the mass transfer method.
  • Three LED chips are provided.
  • the display panel of the present application solves the problem that the LED chips on the growth substrate are shifted during the process of laser lift-off and transfer to the display backplane by coating a non-conductive adhesive layer on the display backplane. Therefore, it not only improves the yield rate of LED chips, but also achieves the effect of improving the transfer efficiency of LED chips.
  • the present application also provides a display device, which includes a supporting frame and the above-mentioned display panel, and the supporting frame is used to support the display panel.
  • the display device of the present application solves the problem that the LED chips on the growth substrate are shifted during the process of laser lift-off and transfer to the display backplane by coating a non-conductive adhesive layer on the display backplane. Therefore, it not only improves the yield rate of LED chips, but also achieves the effect of improving the transfer efficiency of LED chips.
  • FIG. 1 is a schematic flow diagram of a method for mass transfer of LED chips disclosed in an embodiment of the present application
  • FIG. 2 is a schematic flow chart of step S20 in the mass transfer method shown in FIG. 1;
  • FIG. 3 is a schematic diagram of the corresponding structure formed in step S21 in the mass transfer method shown in FIG. 2;
  • FIG. 4 is a schematic diagram of the corresponding structure formed in step S22 in the mass transfer method shown in FIG. 2;
  • FIG. 5 is a schematic diagram of the corresponding structure formed in step S23 in the mass transfer method shown in FIG. 2;
  • FIG. 6 is a schematic diagram of the corresponding structure formed in step S24 in the mass transfer method shown in FIG. 2;
  • FIG. 7 is a schematic flow chart of step S30 in the mass transfer method shown in FIG. 1;
  • FIG. 8 is a schematic diagram of the corresponding structure formed in step S31 in the mass transfer method shown in FIG. 7;
  • FIG. 9 is a schematic diagram of the corresponding structure formed in step S32 in the mass transfer method shown in FIG. 7;
  • FIG. 10 is a schematic diagram of the corresponding structure formed in step S33 in the mass transfer method shown in FIG. 7;
  • FIG. 11 is a schematic diagram of the corresponding structure formed in step S34 in the mass transfer method shown in FIG. 7;
  • FIG. 12 is a schematic flow chart of step S40 in the mass transfer method shown in FIG. 1;
  • FIG. 13 is a schematic diagram of the corresponding structure formed in step S41 in the mass transfer method shown in FIG. 12;
  • FIG. 14 is a schematic diagram of the corresponding structure formed in step S42 in the mass transfer method shown in FIG. 12;
  • FIG. 15 is a schematic diagram of the corresponding structure formed in step S43 in the mass transfer method shown in FIG. 12;
  • FIG. 16 is a schematic diagram of the corresponding structure formed in step S44 in the mass transfer method shown in FIG. 12 .
  • the pixels of the traditional LED display are combined with red, green and blue (RGB) LEDs. Due to the large size of the package, the pixel pitch reaches about 20mm. With the reduction of chip size and the improvement of packaging level, Micro LED further reduces the chip size to less than 50 ⁇ m. During the preparation, Micro-LED is to thin the LED structure, miniaturize and array it, and reduce the size to about 1 ⁇ 10 ⁇ m. A large amount of addressing is transferred to the circuit substrate to form ultra-fine-pitch LEDs to achieve high resolution, and then physical deposition is used to complete the protective layer and electrodes, and then packaged to complete the display of Micro-LEDs.
  • RGB red, green and blue
  • Micro LEDs Compared with conventional LEDs, Micro LEDs have higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption, and can also be combined with flexible panels to achieve flexible displays. With the maturity of the manufacturing process and the decline of prices, there have been more and more related products based on Micro LED chips in recent years.
  • the Micro LED display panel includes sub-pixel rendering of multiple pixel areas (Subpixel Rendering, SPR), each pixel region SPR includes a first LED chip, a third LED chip and a second LED chip.
  • the first LED chip, the third LED chip and the second LED chip need to be transferred from their respective growth substrates to the display backplane.
  • the present application hopes to provide a solution that can solve the above technical problems, which can solve the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by laser and transferred to the display backplane.
  • the details will be It is illustrated in the subsequent examples.
  • FIG. 1 is a schematic flow chart of a mass transfer method for LED chips disclosed in the embodiment of the present application.
  • the mass transfer method is used to perform mass transfer of LED chips to prevent LED chips from Tilting effect occurs when shifting.
  • the method for mass transfer of LED chips at least includes the following steps.
  • the mass transfer method of LED chips of the present application solves the problem of the process of LED chips on the growth substrate being lifted off by laser and transferred to the display backplane by coating the non-conductive adhesive layer 30 on the display backplane 40. There is a problem with the offset of the LED chip in the middle. Wherein, the detailed content for each step will be set forth and specifically illustrated in the following embodiments.
  • the step S20 includes at least the following steps.
  • the first growth substrate 10 is a red LED chip growth substrate
  • the first LED chip 20 is a red LED chip as an example for description.
  • a non-conductive adhesive layer 30 is coated on one side of the display backplane 40 and cured to remove the solvent. Wherein, the curing can remove the solvent by heating and curing, and the display backplane 40 is the thin film transistor (Thin Film Transistor, TFT) backplane.
  • the non-conductive adhesive layer 30 may be made of non-conductive film (Non-Conductive Film, NCF).
  • a first growth substrate 10 is provided, and on the side of the first growth substrate 10 facing the display backplane 40, a Chip On Wafer (COW) temporarily adheres a plurality of first LED chips 20 .
  • COW Chip On Wafer
  • the first LED chip 20 at a preset position on the first growth substrate 10 can be lasered from the first growth substrate 10 using a laser needle. Peeling, the peeled first LED chip 20 is transferred to the corresponding position on the non-conductive adhesive layer 30, and the first growth substrate 10 and the unpeeled first LED chip on the first growth substrate 10 are 20 are removed from the non-conductive adhesive layer 30 together.
  • the laser is a laser with a wavelength of 248nm or 266nm.
  • the stripped first LED chip 20 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40 , at a preset temperature
  • the first LED chip 20 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 through the pressing tool 50 under the predetermined weight.
  • the first LED chip 20 An LED chip 20 presses the non-conductive adhesive layer 30 on the display backplane 40 , so that the first LED chip 20 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding.
  • the position of the first LED chip 20 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.
  • the pressing tool 50 can be a soft pressing plate.
  • the pressing tool 50 can be made of polydimethylsiloxane (Polydimethylsiloxane, PDMS) or polyurethane materials.
  • the preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.
  • the first LED chip 20 Soldering with the solder 41 on the display backplane 40 completes the transfer of the first LED chip 20 .
  • the step S30 includes at least the following steps.
  • the second growth substrate 11 is a green LED chip growth substrate
  • the second LED chip 21 is a green LED chip as an example for description.
  • a second growth substrate 11 is provided, and on the side of the second growth substrate 11 facing the display backplane 40 On Wafer (COW) temporarily adheres a plurality of second LED chips 21 .
  • COW On Wafer
  • the second LED chip 21 at a preset position on the second growth substrate 11 can be lasered from the second growth substrate 11 using a laser needle. Peeling, the peeled second LED chip 21 is transferred to the corresponding position on the non-conductive adhesive layer 30, and the second growth substrate 11 and the unpeeled second LED chip on the second growth substrate 11 21 is removed from the non-conductive adhesive layer 30 together.
  • the laser is a laser with a wavelength of 248nm or 266nm.
  • the peeled second LED chip 21 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40 , at a preset temperature
  • the second LED chip 21 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 by the pressing tool 50 under the predetermined weight.
  • the second LED chip 21 The second LED chip 21 presses the non-conductive adhesive layer 30 on the display backplane 40 , so that the second LED chip 21 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding.
  • the position of the second LED chip 21 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.
  • the preset temperature is 100°C-150°C
  • the preset weight is 2Kg-10kg.
  • the second LED chip 21 and the solder 41 on the display backplane 40 are metal-eutectic bonded, the second LED chip 21 Soldering with the solder 41 on the display backplane 40 completes the transfer of the second LED chip 21 .
  • the step S40 includes at least the following steps.
  • the third growth substrate 12 is a blue LED chip growth substrate
  • the third LED chip 22 is a blue LED chip as an example for description.
  • a third growth substrate 12 is provided, and a plurality of third LED chips 22 are temporarily adhered on the side of the third growth substrate 12 facing the display backplane 40 by Chip on Wafer (COW).
  • COW Chip on Wafer
  • laser needles can be used to lift off the third LED chip 22 at the preset position from the third growth substrate 12 , and the stripped first LED chip 22
  • the three LED chips 22 are transferred to corresponding positions on the non-conductive adhesive layer 30, and the third growth substrate 12 and the unpeeled third LED chip 22 on the third growth substrate 12 are removed from the non-conductive adhesive layer. Layer 30 is removed together.
  • the laser is a laser with a wavelength of 248nm or 266nm.
  • the peeled third LED chip 22 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40.
  • the third LED chip 22 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 through the pressing tool 50 under the predetermined weight.
  • the first The three LED chips 22 press the non-conductive adhesive layer 30 on the display backplane 40 , so that the third LED chip 22 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding.
  • the position of the second LED chip 21 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.
  • the preset temperature is 100°C-150°C
  • the preset weight is 2Kg-10kg.
  • the third LED chip 22 is metal eutectically bonded to the solder 41 on the display backplane 40
  • the third LED chip 22 Soldering with the solder 41 on the display backplane 40 completes the transfer of the third LED chip 22 .
  • the mass transfer method of LED chips of the present application solves the problem of the process of LED chips on the growth substrate being lifted off by laser and transferred to the display backplane by coating the non-conductive adhesive layer 30 on the display backplane 40.
  • There is a problem of offset in the LED chip so not only the yield rate of the LED chip is improved, but also the effect of the transfer efficiency of the LED chip is improved.
  • the embodiment of the present application also provides a display panel, which includes the display backplane 40 shown in the above-mentioned embodiments and the first LED chips 20 transferred to the display backplane 40 by the mass transfer method described in the above-mentioned embodiments. , the second LED chip 21 and the third LED chip 22.
  • the first LED chip 20, the second LED chip 21 and the third LED chip 22 form a plurality of pixel regions. It can be understood that, the first LED chip 20 , the second LED chip 21 and the third LED chip 22 may be different red LED chips, green LED chips or blue LED chips respectively.
  • the display panel may further include a display area and a non-display area, the display area is used for image display, and the non-display area is arranged around the display area and is not used for image display .
  • the display panel may use liquid crystal material as a display medium, but the present application is not limited thereto.
  • the display panel can be used in electronic devices including functions such as personal digital assistants (Personal Digital Assistant, PDA) and/or music players, such as mobile phones, tablet computers, wearable electronic devices with wireless communication functions (such as smart watch), etc.
  • PDA Personal Digital Assistant
  • music players such as mobile phones, tablet computers, wearable electronic devices with wireless communication functions (such as smart watch), etc.
  • the aforementioned electronic device may also be other electronic devices, such as a laptop computer (Laptop) with a touch-sensitive surface (eg, a touch panel).
  • the electronic device can have a communication function, that is, it can communicate through 2G (second-generation mobile phone communication technical specification), 3G (third-generation mobile phone communication technical specification), 4G (fourth-generation mobile phone communication technical specification) , 5G (fifth-generation mobile phone communication technology specification) or W-LAN (wireless local area network) or communication methods that may appear in the future to establish communication with the network.
  • 2G second-generation mobile phone communication technical specification
  • 3G third-generation mobile phone communication technical specification
  • 4G fourth-generation mobile phone communication technical specification
  • 5G fifth-generation mobile phone communication technology specification
  • W-LAN wireless local area network
  • An embodiment of the present application further provides a display device, which includes a support frame and the display panel in the above embodiments, and the support frame is used to support the display panel.
  • the display device includes, but is not limited to: any electronic device or component with a display function such as Mini LED panel, Mirco LED panel, mobile phone, tablet computer, navigator, monitor, etc., and this application does not specifically limit it.
  • the display device may further include: a pixel circuit disposed in the display area of the display panel for displaying images; a circuit board assembly for providing operating voltage, driving current and corresponding functional signals.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de transfert de masse de puce de DEL, consistant à : utiliser une plaque arrière d'affichage (40), et disposer une couche adhésive non conductrice (30) d'un côté de la plaque arrière d'affichage (40) ; utiliser un premier substrat de croissance (10), transférer une pluralité de premières puces de DEL (20) du premier substrat de croissance (10) sur la couche adhésive non conductrice (30), et connecter électriquement les premières puces de DEL (20) et la plaque arrière d'affichage (40) ; utiliser un deuxième substrat de croissance (11), transférer une pluralité de deuxièmes puces de DEL (21) du deuxième substrat de croissance (11) sur la couche adhésive non conductrice (30), et connecter électriquement les deuxièmes puces de DEL (21) et la plaque arrière d'affichage (40) ; et utiliser un troisième substrat de croissance (12), transférer une pluralité de troisièmes puces de DEL (22) du troisième substrat de croissance (12) sur la couche adhésive non conductrice (30), et connecter électriquement les troisièmes puces de DEL (22) et la plaque arrière d'affichage (40). La présente invention concerne en outre un panneau d'affichage et un appareil d'affichage comprenant le panneau d'affichage.
PCT/CN2021/113592 2021-08-19 2021-08-19 Procédé de transfert de masse de puce de del, panneau d'affichage et appareil d'affichage WO2023019522A1 (fr)

Priority Applications (1)

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PCT/CN2021/113592 WO2023019522A1 (fr) 2021-08-19 2021-08-19 Procédé de transfert de masse de puce de del, panneau d'affichage et appareil d'affichage

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PCT/CN2021/113592 WO2023019522A1 (fr) 2021-08-19 2021-08-19 Procédé de transfert de masse de puce de del, panneau d'affichage et appareil d'affichage

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CN106992230A (zh) * 2017-04-28 2017-07-28 京东方科技集团股份有限公司 一种led微粒转印方法
CN109920812A (zh) * 2017-12-13 2019-06-21 群创光电股份有限公司 电子装置及其制造方法
CN108538878A (zh) * 2018-07-11 2018-09-14 大连德豪光电科技有限公司 微发光二极管基板及其制备方法、显示装置
CN109661122A (zh) * 2018-11-09 2019-04-19 华中科技大学 一种适用于微型发光二极管的选择性巨量转移方法

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