WO2023019522A1

WO2023019522A1 - Mass transfer method for led chip, display panel, and display apparatus

Info

Publication number: WO2023019522A1
Application number: PCT/CN2021/113592
Authority: WO
Inventors: 翟峰; 萧俊龙; 蔡明达
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2021-08-19
Filing date: 2021-08-19
Publication date: 2023-02-23

Abstract

A mass transfer method for an LED chip, comprising: providing a display back plate (40), and providing a non-conductive adhesive layer (30) on one side of the display back plate (40); providing a first growth substrate (10), transferring a plurality of first LED chips (20) on the first growth substrate (10) to the non-conductive adhesive layer (30), and electrically connecting the first LED chips (20) to the display back plate (40); providing a second growth substrate (11), transferring a plurality of second LED chips (21) on the second growth substrate (11) to the non-conductive adhesive layer (30), and electrically connecting the second LED chips (21) to the display back plate (40); and providing a third growth substrate (12), transferring a plurality of third LED chips (22) on the third growth substrate (12) to the non-conductive adhesive layer (30), and electrically connecting the third LED chips (22) to the display back plate (40). The present application further provides a display panel and a display apparatus comprising the display panel.

Description

Mass transfer method of LED chip, display panel and display device

technical field

The present application relates to the field of display technology, in particular to a mass transfer method of LED chips, a display panel and a display device having the display panel.

Background technique

Micro Light Emitting Diode (Micro Light Emitting Diode, Micro LED) is a new generation of display technology. Compared with traditional LEDs, it has higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption, and it can also be combined with flexible panels to achieve flexibility. show. With the maturity of the manufacturing process and the decline of prices, there have been more and more related products based on Micro LED chips in recent years. At present, the Micro LED display panel includes sub-pixel rendering of multiple pixel areas (Subpixel Rendering, SPR), each pixel region SPR includes a first LED chip, a second LED chip and a third LED chip.

Usually, during the manufacturing process of the display panel, the first LED chip, the second LED chip and the third LED chip need to be transferred from their respective growth substrates to the display backplane. However, since a certain distance must be maintained between the growth substrate and the display backplane, this will lead to the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by the laser and transferred to the display backplane.

technical problem

In view of the deficiencies in the prior art above, the purpose of this application is to provide a method for mass transfer of LED chips, a display panel and a display device with the display panel, which aims to solve the problems existing in the prior art due to the growth of the display panel. A certain distance must be kept between the substrate and the display backplane, which leads to the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by the laser and transferred to the display backplane.

technical solution

A method for mass transfer of LED chips, comprising: providing a display backplane, setting a non-conductive adhesive layer on one side of the display backplane; providing a first growth substrate, and placing multiple A first LED chip is transferred to the non-conductive adhesive layer, and the first LED chip is electrically connected to the display backplane; a second growth substrate is provided, and a plurality of second growth substrates on the second growth substrate are provided. Transfer the LED chip to the non-conductive adhesive layer, electrically connect the second LED chip to the display backplane; provide a third growth substrate, and transfer a plurality of third LED chips on the third growth substrate To the non-conductive adhesive layer, the third LED chip is electrically connected to the display backplane.

In summary, the mass transfer method of LED chips of the present application solves the problem of LED chips on the growth substrate being peeled off by laser and transferred to the display backplane by coating a non-conductive adhesive layer on the display backplane. The chip has the problem of offset, so not only the yield rate of the LED chip is improved, but also the effect of improving the transfer efficiency of the LED chip is achieved.

Optionally, in providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and bonding the first LED chips to the display backplane The electrical connection includes: providing a first growth substrate, setting a plurality of first LED chips on the side of the first growth substrate facing the non-conductive adhesive layer; peeling the first LED chip onto the non-conductive adhesive layer, and removing the first growth substrate; pressing the first LED chip on the non-conductive adhesive layer, so that The first LED chip and the solder on the display backplane realize metal eutectic bonding; welding the first LED chip and the solder on the display backplane to complete the transfer of the first LED chip .

Optionally, providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and bonding the second LED chips to the display backplane The electrical connection includes: providing a second growth substrate, setting a plurality of second LED chips on the side of the second growth substrate facing the non-conductive adhesive layer; The second LED chip is peeled off from the non-conductive adhesive layer, and the second growth substrate is removed; the second LED chip on the non-conductive adhesive layer is pressed, so that The second LED chip and the solder on the display backplane realize metal eutectic bonding; welding the second LED chip and the solder on the display backplane to complete the transfer of the second LED chip .

Optionally, providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and bonding the second LED chips to the display backplane The electrical connection includes: providing a third growth substrate, adhering a plurality of third LED chips on the side of the third growth substrate facing the non-conductive adhesive layer; placing a preset position on the third growth substrate Peel off the third LED chip on the non-conductive adhesive layer, and remove the third growth substrate; press-bond the third LED chip on the non-conductive adhesive layer, to making the third LED chip and the solder on the display backplane achieve metal eutectic bonding; welding the third LED chip and the solder on the display backplane to complete the bonding of the third LED chip transfer.

Optionally, the peeling off the first LED chip at the preset position on the first growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the first LED chip on the first growth substrate. The first LED chip at the preset position is laser lifted from the first growth substrate, wherein the wavelength of the laser is 248nm or 266nm.

Optionally, the peeling off the second LED chip at the preset position on the second growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the second LED chip on the second growth substrate. The second LED chip at the preset position is laser lifted off from the second growth substrate, wherein the wavelength of the laser is 248nm or 266nm.

Optionally, the peeling off the third LED chip at the preset position on the third growth substrate to the non-conductive adhesive layer further includes: using a laser needle to peel off the third LED chip on the third growth substrate. The third LED chip at the preset position is laser lifted off from the third growth substrate, wherein the wavelength of the laser is 248nm or 266nm.

Optionally, the pressing the first LED chip on the non-conductive adhesive layer includes: using a pressing tool at a preset temperature and a preset weight toward the display The direction of the back plate presses the first LED chip on the non-conductive adhesive layer.

Optionally, the pressing of the second LED chip on the non-conductive adhesive layer includes: using a pressing tool to target the LED chip at the preset temperature and the preset weight Pressing the second LED chip on the non-conductive adhesive layer along the direction of the display backplane.

Optionally, the pressing the third LED chip on the non-conductive adhesive layer includes: using a pressing tool to target the LED chip at the preset temperature and the preset weight. Pressing the third LED chip on the non-conductive adhesive layer along the direction of the display backplane.

Optionally, the pressing tool is a soft pressing plate.

Optionally, the pressing tool is made of polydimethylsiloxane or polyurethane material.

Optionally, the preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.

Optionally, the display backplane is a thin film field effect transistor backplane.

Optionally, the non-conductive adhesive layer is made of non-conductive adhesive.

Optionally, the non-conductive adhesive layer is coated on one side of the display backplane, and cured to remove the solvent.

Optionally, the curing removes the solvent by heating and curing.

Optionally, the first LED chip, the second LED chip and the third LED chip are respectively different red LED chips, green LED chips or blue LED chips.

Based on the same inventive concept, the present application also provides a display panel, which includes the above-mentioned display backplane and the first LED chip, the second LED chip and the first LED chip transferred to the display backplane by the mass transfer method. Three LED chips.

To sum up, the display panel of the present application solves the problem that the LED chips on the growth substrate are shifted during the process of laser lift-off and transfer to the display backplane by coating a non-conductive adhesive layer on the display backplane. Therefore, it not only improves the yield rate of LED chips, but also achieves the effect of improving the transfer efficiency of LED chips.

Based on the same inventive concept, the present application also provides a display device, which includes a supporting frame and the above-mentioned display panel, and the supporting frame is used to support the display panel.

Beneficial effect

To sum up, the display device of the present application solves the problem that the LED chips on the growth substrate are shifted during the process of laser lift-off and transfer to the display backplane by coating a non-conductive adhesive layer on the display backplane. Therefore, it not only improves the yield rate of LED chips, but also achieves the effect of improving the transfer efficiency of LED chips.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application. Those of ordinary skill in the art can also obtain other drawings based on these drawings without any creative effort.

FIG. 1 is a schematic flow diagram of a method for mass transfer of LED chips disclosed in an embodiment of the present application;

FIG. 2 is a schematic flow chart of step S20 in the mass transfer method shown in FIG. 1;

FIG. 3 is a schematic diagram of the corresponding structure formed in step S21 in the mass transfer method shown in FIG. 2;

FIG. 4 is a schematic diagram of the corresponding structure formed in step S22 in the mass transfer method shown in FIG. 2;

FIG. 5 is a schematic diagram of the corresponding structure formed in step S23 in the mass transfer method shown in FIG. 2;

FIG. 6 is a schematic diagram of the corresponding structure formed in step S24 in the mass transfer method shown in FIG. 2;

FIG. 7 is a schematic flow chart of step S30 in the mass transfer method shown in FIG. 1;

FIG. 8 is a schematic diagram of the corresponding structure formed in step S31 in the mass transfer method shown in FIG. 7;

FIG. 9 is a schematic diagram of the corresponding structure formed in step S32 in the mass transfer method shown in FIG. 7;

FIG. 10 is a schematic diagram of the corresponding structure formed in step S33 in the mass transfer method shown in FIG. 7;

FIG. 11 is a schematic diagram of the corresponding structure formed in step S34 in the mass transfer method shown in FIG. 7;

FIG. 12 is a schematic flow chart of step S40 in the mass transfer method shown in FIG. 1;

FIG. 13 is a schematic diagram of the corresponding structure formed in step S41 in the mass transfer method shown in FIG. 12;

FIG. 14 is a schematic diagram of the corresponding structure formed in step S42 in the mass transfer method shown in FIG. 12;

FIG. 15 is a schematic diagram of the corresponding structure formed in step S43 in the mass transfer method shown in FIG. 12;

FIG. 16 is a schematic diagram of the corresponding structure formed in step S44 in the mass transfer method shown in FIG. 12 .

Explanation of reference signs: 10-first growth substrate; 11-second growth substrate; 12-third growth substrate; 20-first LED chip; 21-second LED chip; 22-third LED chip; 30-non- Conductive adhesive layer; 40-display backplane; 41-solder; 50-pressing tool; S10-S40-steps in the mass transfer method of LED chips; S21-S24-step S20 in the mass transfer method of LED chips Steps: S31-S34-the steps of step S30 in the mass transfer method of LED chips; S41-S44-the steps of step S40 in the mass transfer method of LED chips.

Embodiments of the present invention

In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific implementations, and is not intended to limit the application.

The pixels of the traditional LED display are combined with red, green and blue (RGB) LEDs. Due to the large size of the package, the pixel pitch reaches about 20mm. With the reduction of chip size and the improvement of packaging level, Micro LED further reduces the chip size to less than 50 μm. During the preparation, Micro-LED is to thin the LED structure, miniaturize and array it, and reduce the size to about 1~10 μm. A large amount of addressing is transferred to the circuit substrate to form ultra-fine-pitch LEDs to achieve high resolution, and then physical deposition is used to complete the protective layer and electrodes, and then packaged to complete the display of Micro-LEDs. Moreover, compared with conventional LEDs, Micro LEDs have higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption, and can also be combined with flexible panels to achieve flexible displays. With the maturity of the manufacturing process and the decline of prices, there have been more and more related products based on Micro LED chips in recent years. At present, the Micro LED display panel includes sub-pixel rendering of multiple pixel areas (Subpixel Rendering, SPR), each pixel region SPR includes a first LED chip, a third LED chip and a second LED chip. Usually, during the manufacturing process of the display panel, the first LED chip, the third LED chip and the second LED chip need to be transferred from their respective growth substrates to the display backplane. However, since a certain distance must be maintained between the growth substrate and the display backplane, this will lead to the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by the laser and transferred to the display backplane. Therefore, how to solve the problem that the LED chips on the growth substrate are offset during the process of being lifted off by the laser and transferred to the display backplane is an urgent problem to be solved.

Based on this, the present application hopes to provide a solution that can solve the above technical problems, which can solve the problem that the LED chips on the growth substrate are shifted during the process of being lifted off by laser and transferred to the display backplane. The details will be It is illustrated in the subsequent examples.

Detailed description of the scheme of the present application The mass transfer method of LED chips, the display panel formed by the mass transfer method, and the display device with the display panel.

Please refer to FIG. 1 , which is a schematic flow chart of a mass transfer method for LED chips disclosed in the embodiment of the present application. The mass transfer method is used to perform mass transfer of LED chips to prevent LED chips from Tilting effect occurs when shifting. As shown in FIG. 1 , in an embodiment of the present application, the method for mass transfer of LED chips at least includes the following steps.

S10, providing a display backplane, and setting a non-conductive adhesive layer on one side of the display backplane;

S20, providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips to the display backplane;

S30, providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips to the display backplane;

S40, providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and electrically connecting the third LED chips to the display backplane.

In summary, the mass transfer method of LED chips of the present application solves the problem of the process of LED chips on the growth substrate being lifted off by laser and transferred to the display backplane by coating the non-conductive adhesive layer 30 on the display backplane 40. There is a problem with the offset of the LED chip in the middle. Wherein, the detailed content for each step will be set forth and specifically illustrated in the following embodiments.

Please refer to FIG. 2 , in this embodiment, the step S20 includes at least the following steps.

S21 , providing a first growth substrate 10 , and disposing a plurality of first LED chips 20 on a side of the first growth substrate 10 facing the non-conductive adhesive layer 30 .

Specifically, in the embodiments of the present application, the first growth substrate 10 is a red LED chip growth substrate, and the first LED chip 20 is a red LED chip as an example for description. As shown in FIG. 3 , a non-conductive adhesive layer 30 is coated on one side of the display backplane 40 and cured to remove the solvent. Wherein, the curing can remove the solvent by heating and curing, and the display backplane 40 is the thin film transistor (Thin Film Transistor, TFT) backplane. In the embodiment of the present application, the non-conductive adhesive layer 30 may be made of non-conductive film (Non-Conductive Film, NCF). A first growth substrate 10 is provided, and on the side of the first growth substrate 10 facing the display backplane 40, a Chip On Wafer (COW) temporarily adheres a plurality of first LED chips 20 .

S22 , peel off the first LED chip 20 at a predetermined position on the first growth substrate 10 onto the non-conductive adhesive layer 30 , and remove the first growth substrate 10 .

Specifically, in the embodiment of the present application, as shown in FIG. 4 , the first LED chip 20 at a preset position on the first growth substrate 10 can be lasered from the first growth substrate 10 using a laser needle. Peeling, the peeled first LED chip 20 is transferred to the corresponding position on the non-conductive adhesive layer 30, and the first growth substrate 10 and the unpeeled first LED chip on the first growth substrate 10 are 20 are removed from the non-conductive adhesive layer 30 together. Wherein, the laser is a laser with a wavelength of 248nm or 266nm.

S23. Pressing the first LED chip 20 on the non-conductive adhesive layer 30, so that the first LED chip 20 and the solder 41 on the display backplane 40 realize a metal eutectic bond combine.

Specifically, in the embodiment of the present application, as shown in FIG. 5 , the stripped first LED chip 20 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40 , at a preset temperature The first LED chip 20 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 through the pressing tool 50 under the predetermined weight. At this time, the first LED chip 20 An LED chip 20 presses the non-conductive adhesive layer 30 on the display backplane 40 , so that the first LED chip 20 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding. During the pressing process, the position of the first LED chip 20 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.

In the embodiment of the present application, the pressing tool 50 can be a soft pressing plate. Exemplarily, the pressing tool 50 can be made of polydimethylsiloxane (Polydimethylsiloxane, PDMS) or polyurethane materials. The preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.

S24 , soldering the first LED chip 20 to the solder 41 on the display backplane 40 to complete the transfer of the first LED chip 20 .

Specifically, in the embodiment of the present application, as shown in FIG. 6 , after the metal eutectic bonding of the first LED chip 20 and the solder 41 on the display backplane 40 , the first LED chip 20 Soldering with the solder 41 on the display backplane 40 completes the transfer of the first LED chip 20 .

Please refer to FIG. 7 , in this implementation manner, the step S30 includes at least the following steps.

S31 , providing a second growth substrate 11 , and disposing a plurality of second LED chips 21 on a side of the second growth substrate 11 facing the non-conductive adhesive layer 30 .

Specifically, in the embodiment of the present application, the second growth substrate 11 is a green LED chip growth substrate, and the second LED chip 21 is a green LED chip as an example for description. As shown in FIG. 8 , a second growth substrate 11 is provided, and on the side of the second growth substrate 11 facing the display backplane 40 On Wafer (COW) temporarily adheres a plurality of second LED chips 21 .

S32 , peeling off the second LED chip 21 at a predetermined position on the second growth substrate 11 onto the non-conductive adhesive layer 30 , and removing the second growth substrate 11 .

Specifically, in the embodiment of the present application, as shown in FIG. 9 , the second LED chip 21 at a preset position on the second growth substrate 11 can be lasered from the second growth substrate 11 using a laser needle. peeling, the peeled second LED chip 21 is transferred to the corresponding position on the non-conductive adhesive layer 30, and the second growth substrate 11 and the unpeeled second LED chip on the second growth substrate 11 21 is removed from the non-conductive adhesive layer 30 together. Wherein, the laser is a laser with a wavelength of 248nm or 266nm.

S33. Pressing the second LED chip 21 on the non-conductive adhesive layer 30, so that the second LED chip 21 and the solder 41 on the display backplane 40 realize a metal eutectic bond combine.

Specifically, in the embodiment of the present application, as shown in FIG. 10 , the peeled second LED chip 21 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40 , at a preset temperature The second LED chip 21 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 by the pressing tool 50 under the predetermined weight. At this time, the second LED chip 21 The second LED chip 21 presses the non-conductive adhesive layer 30 on the display backplane 40 , so that the second LED chip 21 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding. During the pressing process, the position of the second LED chip 21 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.

In the embodiment of the present application, the preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.

S34 , welding the second LED chip 21 to the solder 41 on the display backplane 40 to complete the transfer of the second LED chip 21 .

Specifically, in the embodiment of the present application, as shown in FIG. 11 , after the second LED chip 21 and the solder 41 on the display backplane 40 are metal-eutectic bonded, the second LED chip 21 Soldering with the solder 41 on the display backplane 40 completes the transfer of the second LED chip 21 .

Please refer to FIG. 12 , in this implementation manner, the step S40 includes at least the following steps.

S41 , providing a third growth substrate 12 , and adhering a plurality of third LED chips 22 on a side of the third growth substrate 12 facing the non-conductive adhesive layer 30 .

Specifically, in the embodiment of the present application, the third growth substrate 12 is a blue LED chip growth substrate, and the third LED chip 22 is a blue LED chip as an example for description. As shown in FIG. 13 , a third growth substrate 12 is provided, and a plurality of third LED chips 22 are temporarily adhered on the side of the third growth substrate 12 facing the display backplane 40 by Chip on Wafer (COW).

S42 , peel off the third LED chip 22 at a predetermined position on the third growth substrate 12 onto the non-conductive adhesive layer 30 , and remove the third growth substrate 12 .

Specifically, in the embodiment of the present application, as shown in FIG. 14 , laser needles can be used to lift off the third LED chip 22 at the preset position from the third growth substrate 12 , and the stripped first LED chip 22 The three LED chips 22 are transferred to corresponding positions on the non-conductive adhesive layer 30, and the third growth substrate 12 and the unpeeled third LED chip 22 on the third growth substrate 12 are removed from the non-conductive adhesive layer. Layer 30 is removed together. Wherein, the laser is a laser with a wavelength of 248nm or 266nm.

S43. Pressing the third LED chip 22 on the non-conductive adhesive layer 30, so that the third LED chip 22 and the solder 41 on the display backplane 40 realize a metal eutectic bond combine.

Specifically, in the embodiment of the present application, as shown in FIG. 15, the peeled third LED chip 22 is temporarily adhered to the non-conductive adhesive layer 30 on the display backplane 40. The third LED chip 22 located on the non-conductive adhesive layer 30 is press-pressed in the direction of the display backplane 40 through the pressing tool 50 under the predetermined weight. At this time, the first The three LED chips 22 press the non-conductive adhesive layer 30 on the display backplane 40 , so that the third LED chip 22 and the corresponding solder 41 on the display backplane 40 realize metal eutectic bonding. During the pressing process, the position of the second LED chip 21 that is not adhered and peeled off on the non-conductive adhesive layer 30 will not be affected by the pressing.

S44 , welding the third LED chip 22 to the solder 41 on the display backplane 40 to complete the transfer of the third LED chip 22 .

Specifically, in the embodiment of the present application, as shown in FIG. 16 , after the third LED chip 22 is metal eutectically bonded to the solder 41 on the display backplane 40, the third LED chip 22 Soldering with the solder 41 on the display backplane 40 completes the transfer of the third LED chip 22 .

In summary, the mass transfer method of LED chips of the present application solves the problem of the process of LED chips on the growth substrate being lifted off by laser and transferred to the display backplane by coating the non-conductive adhesive layer 30 on the display backplane 40. There is a problem of offset in the LED chip, so not only the yield rate of the LED chip is improved, but also the effect of the transfer efficiency of the LED chip is improved.

The embodiment of the present application also provides a display panel, which includes the display backplane 40 shown in the above-mentioned embodiments and the first LED chips 20 transferred to the display backplane 40 by the mass transfer method described in the above-mentioned embodiments. , the second LED chip 21 and the third LED chip 22. Wherein, the first LED chip 20, the second LED chip 21 and the third LED chip 22 form a plurality of pixel regions. It can be understood that, the first LED chip 20 , the second LED chip 21 and the third LED chip 22 may be different red LED chips, green LED chips or blue LED chips respectively. In other embodiments, the display panel may further include a display area and a non-display area, the display area is used for image display, and the non-display area is arranged around the display area and is not used for image display . The display panel may use liquid crystal material as a display medium, but the present application is not limited thereto.

It can be understood that the display panel can be used in electronic devices including functions such as personal digital assistants (Personal Digital Assistant, PDA) and/or music players, such as mobile phones, tablet computers, wearable electronic devices with wireless communication functions (such as smart watch), etc. The aforementioned electronic device may also be other electronic devices, such as a laptop computer (Laptop) with a touch-sensitive surface (eg, a touch panel). In some embodiments, the electronic device can have a communication function, that is, it can communicate through 2G (second-generation mobile phone communication technical specification), 3G (third-generation mobile phone communication technical specification), 4G (fourth-generation mobile phone communication technical specification) , 5G (fifth-generation mobile phone communication technology specification) or W-LAN (wireless local area network) or communication methods that may appear in the future to establish communication with the network. For the sake of brevity, this embodiment of the present application does not make further limitations.

An embodiment of the present application further provides a display device, which includes a support frame and the display panel in the above embodiments, and the support frame is used to support the display panel. Wherein, the display device includes, but is not limited to: any electronic device or component with a display function such as Mini LED panel, Mirco LED panel, mobile phone, tablet computer, navigator, monitor, etc., and this application does not specifically limit it. It can be understood that the display device may further include: a pixel circuit disposed in the display area of the display panel for displaying images; a circuit board assembly for providing operating voltage, driving current and corresponding functional signals.

It should be understood that the application of the present application is not limited to the above examples, and those skilled in the art can make improvements or changes based on the above descriptions, and all these improvements and changes should belong to the protection scope of the appended claims of the present application.

Claims

A mass transfer method for LED chips, characterized in that the mass transfer method comprises:

A display backplane is provided, and a non-conductive adhesive layer is provided on one side of the display backplane;

providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips to the display backplane;

providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips to the display backplane;

A third growth substrate is provided, a plurality of third LED chips on the third growth substrate are transferred to the non-conductive adhesive layer, and the third LED chips are electrically connected to the display backplane.
The mass transfer method of LED chips according to claim 1, wherein the first growth substrate is provided, and a plurality of first LED chips on the first growth substrate are transferred to the non-conductive adhesive layer, electrically connecting the first LED chip to the display backplane, comprising:

A first growth substrate is provided, and a plurality of first LED chips are arranged on a side of the first growth substrate facing the non-conductive adhesive layer;

peeling off the first LED chip at a predetermined position on the first growth substrate onto the non-conductive adhesive layer, and removing the first growth substrate;

Pressing the first LED chip on the non-conductive adhesive layer, so that the first LED chip and the solder on the display backplane realize metal eutectic bonding;

Welding the first LED chip to the solder on the display backplane to complete the transfer of the first LED chip.
The mass transfer method of LED chips according to claim 1, wherein the second growth substrate is provided, and a plurality of second LED chips on the second growth substrate are transferred to the non-conductive adhesive layer, electrically connecting the second LED chip with the display backplane, comprising:

A second growth substrate is provided, and a plurality of second LED chips are arranged on a side of the second growth substrate facing the non-conductive adhesive layer;

peeling off the second LED chip at a preset position on the second growth substrate onto the non-conductive adhesive layer, and removing the second growth substrate;

Pressing the second LED chip on the non-conductive adhesive layer, so that the second LED chip and the solder on the display backplane realize metal eutectic bonding;

Welding the second LED chip to the solder on the display backplane to complete the transfer of the second LED chip.
The mass transfer method of LED chips according to claim 1, wherein the third growth substrate is provided, and a plurality of third LED chips on the third growth substrate are transferred to the non-conductive adhesive layer, electrically connecting the second LED chip with the display backplane, comprising:

providing a third growth substrate, adhering a plurality of third LED chips on the side of the third growth substrate facing the non-conductive adhesive layer;

peeling off the third LED chip at a preset position on the third growth substrate onto the non-conductive adhesive layer, and removing the third growth substrate;

Pressing the third LED chip on the non-conductive adhesive layer, so that the third LED chip and the solder on the display backplane realize metal eutectic bonding;

Welding the third LED chip to the solder on the display backplane to complete the transfer of the third LED chip.
The method for mass transfer of LED chips according to claim 2, characterized in that, the first LED chip at a preset position on the first growth substrate is peeled off onto the non-conductive adhesive layer, Also includes:

Using a laser needle to laser lift off the first LED chip at the preset position on the first growth substrate from the first growth substrate, wherein the wavelength of the laser light is 248nm or 266nm.
The method for mass transfer of LED chips according to claim 3, characterized in that, the second LED chip at a predetermined position on the second growth substrate is peeled off onto the non-conductive adhesive layer, Also includes:

Using a laser needle to laser lift off the second LED chip at the preset position on the second growth substrate from the second growth substrate, wherein the wavelength of the laser light is 248nm or 266nm.
The method for mass transfer of LED chips according to claim 4, wherein the step of peeling off the third LED chip at a predetermined position on the third growth substrate onto the non-conductive adhesive layer, Also includes:

Using a laser needle to laser lift off the third LED chip at the preset position on the third growth substrate from the third growth substrate, wherein the wavelength of the laser light is 248nm or 266nm.
The method for mass transfer of LED chips according to claim 2, wherein the pressing of the first LED chips on the non-conductive adhesive layer comprises:

The first LED chip located on the non-conductive adhesive layer is purposely pressed toward the direction of the display backplane by a pressing tool at a preset temperature and a preset weight.
The method for mass transfer of LED chips according to claim 3, wherein the pressing of the second LED chips on the non-conductive adhesive layer comprises:

Under the preset temperature and the preset weight, the second LED chip on the non-conductive adhesive layer is targetedly pressed toward the direction of the display backplane by a pressing tool.
The method for mass transfer of LED chips according to claim 4, wherein the pressing of the third LED chips on the non-conductive adhesive layer comprises:

Under the preset temperature and the preset weight, the third LED chip on the non-conductive adhesive layer is purposely pressed toward the direction of the display backplane by a pressing tool.
The mass transfer method of LED chips according to any one of claims 8-10, wherein the pressing tool is a soft pressing plate.
The method for mass transfer of LED chips according to claim 11, wherein the pressing tool is made of polydimethylsiloxane or polyurethane materials.
The mass transfer method of LED chips according to claims 8-10, characterized in that, the preset temperature is 100°C-150°C, and the preset weight is 2Kg-10kg.
The method for mass transfer of LED chips according to claim 1, wherein the display backplane is a thin film field effect transistor backplane.
The mass transfer method of LED chips according to claim 1, wherein the non-conductive adhesive layer is made of non-conductive adhesive.
The method for mass transfer of LED chips according to claim 1, further comprising: coating the non-conductive adhesive layer on one side of the display backplane, curing and removing the solvent.
The method for mass transfer of LED chips according to claim 16, characterized in that the solvent is removed by curing by heating and curing.
The mass transfer method of LED chips according to claim 1, wherein the first LED chip, the second LED chip and the third LED chip are red LED chips, green LED chips, and green LED chips that are different from each other. Light LED chips or blue LED chips.
A display panel, characterized in that it comprises the display backplane according to any one of claims 1-18 and the first LED chip and the second LED chip transferred to the display backplane by the mass transfer method. chip and a third LED chip.
A display device, characterized by comprising a support frame and the display panel according to claim 19, the support frame being used to support the display panel.