CN115708219A

CN115708219A - Mass transfer method of LED chips, display panel and display device

Info

Publication number: CN115708219A
Application number: CN202110957134.2A
Authority: CN
Inventors: 翟峰; 萧俊龙; 蔡明达
Original assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Current assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority date: 2021-08-19
Filing date: 2021-08-19
Publication date: 2023-02-21

Abstract

The application relates to a bulk transfer method of an LED chip, which comprises the following steps: providing a display back plate, and arranging a non-conductive adhesive layer on one side of the display back plate; providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to a non-conductive adhesive layer, and electrically connecting the first LED chips with a display back plate; providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips with the display back plate; and providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and electrically connecting the third LED chips with the display back plate, so that the problem that the LED chips on the growth substrate deviate in the process of being peeled off by laser and transferred to the display back plate is solved. The application also provides a display panel and a display device with the display panel.

Description

Mass transfer method of LED chips, display panel and display device

Technical Field

The present disclosure relates to the field of display technologies, and in particular, to a method for transferring a large amount of LED chips, a display panel, and a display device having the display panel.

Background

As a new generation of display technology, micro Light Emitting diodes (Micro LEDs) have higher photoelectric efficiency, higher brightness, higher contrast, and lower power consumption than conventional LEDs, and can also be combined with a flexible panel to realize flexible display. With the maturity of the manufacturing process and the reduction of the price, related products based on Micro LED chips are increasing in recent years. Currently, a plurality of pixel area sub-pixel Rendering (SPR) are included on the Micro LED display panel, and each pixel area SPR includes a first LED chip, a second LED chip, and a third LED chip.

In general, in the manufacturing process of the display panel, the first LED chip, the second LED chip, and the third LED chip need to be transferred from the respective growth substrates to the display backplane. However, since a certain distance must be kept between the growth substrate and the display backplane, the LED chips on the growth substrate are shifted during the laser lift-off transfer to the display backplane.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a method for transferring LED chips in bulk, a display panel and a display device having the display panel, which aims to solve the problem in the prior art that the LED chips on the growth substrate shift during the process of being transferred to the display backplane by laser lift-off due to the fact that a certain distance must be kept between the growth substrate of the display panel and the display backplane.

A bulk transfer method of LED chips, comprising: providing a display back plate, and arranging a non-conductive adhesive layer on one side of the display back plate; providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips with the display back plate; providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips with the display back plate; providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and electrically connecting the third LED chips with the display back plate.

In summary, according to the massive transfer method of the LED chips, the non-conductive adhesive layer is coated on the display back plate, so that the problem that the LED chips on the growth substrate shift in the process of being peeled off by the laser and transferred to the display back plate is solved, and therefore, the yield of the LED chips is improved, and the effect of improving the transfer efficiency of the LED chips is achieved.

Optionally, the providing a first growth substrate, transferring the plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips with the display backplane includes: providing a first growth substrate, and arranging a plurality of first LED chips on one side of the first growth substrate, which faces the non-conductive adhesive layer; peeling the first LED chip at a preset position on the first growth substrate to the non-conductive adhesive layer, and removing the first growth substrate; pressing the first LED chip on the non-conductive adhesive layer to enable the first LED chip and the solder on the display back plate to realize metal eutectic bonding; and welding the first LED chip and the welding flux on the display back plate to finish the transfer of the first LED chip.

Optionally, the providing a second growth substrate, transferring the plurality of second LED chips on the second growth substrate to the non-conductive glue layer, and electrically connecting the second LED chips with the display backplane includes: providing a second growth substrate, and arranging a plurality of second LED chips on one side of the second growth substrate, which faces the non-conductive glue layer; peeling the second LED chip at a preset position on the second growth substrate to the non-conductive adhesive layer, and removing the second growth substrate; pressing the second LED chip on the non-conductive adhesive layer to enable the second LED chip and the solder on the display back plate to realize metal eutectic bonding; and welding the second LED chip with the solder on the display back plate to finish the transfer of the second LED chip.

Optionally, the providing a third growth substrate, transferring the plurality of third LED chips on the third growth substrate to the non-conductive glue layer, and electrically connecting the second LED chips with the display backplane includes: providing a third growth substrate, and adhering a plurality of third LED chips on one side of the third growth substrate, which faces the non-conductive glue layer; peeling the third LED chip at a preset position on the third growth substrate to the non-conductive adhesive layer, and removing the third growth substrate; pressing the third LED chip on the non-conductive adhesive layer to enable the third LED chip and the solder on the display back plate to realize metal eutectic bonding; and welding the third LED chip with the solder on the display back plate to finish the transfer of the third LED chip.

Optionally, the bulk transfer method further includes: laser stripping the first LED chip at the preset position on the first growth substrate from the first growth substrate by using a laser needle; and/or laser stripping the second LED chip at the preset position on the second growth substrate from the second growth substrate by using a laser needle; and/or laser stripping the third LED chip at the preset position on the third growth substrate from the third growth substrate by using a laser needle; wherein the wavelength of the laser is 248nm or 266nm.

Optionally, the bulk transfer method further includes: pressing the first LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate through a pressing tool at a preset temperature and a preset weight; and/or pressing the second LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate by the pressing tool at the preset temperature and the preset weight; and/or pressing the third LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate by the pressing tool at the preset temperature and the preset weight.

Optionally, the pressing tool is made of polydimethylsiloxane or polyurethane material, the preset temperature is 100-150 ℃, and the preset weight is 2Kg-10Kg.

Optionally, the display backplane is a thin film field effect transistor backplane, and the non-conductive adhesive layer is made of a non-conductive adhesive.

Based on the same inventive concept, the application also provides a display panel, which comprises the display backboard, and the first LED chip, the second LED chip and the third LED chip transferred onto the display backboard by the mass transfer method.

To sum up, the display panel of this application has solved the LED chip on the growth substrate and has been peeled off by the laser and shift the problem that the skew appears in the in-process LED chip that shows the backplate through scribbling non-conductive glue film on showing the backplate, consequently has not only improved the yield of LED chip to reach the effect that improves LED chip transfer efficiency.

Based on the same inventive concept, the present application also provides a display apparatus including a support frame for supporting the display panel and the display panel described above.

To sum up, the display device of this application has solved the LED chip on the growth substrate and has been peeled off by the laser and shift the problem that the skew appears in the in-process LED chip that shows the backplate through scribbling non-conductive glue film on showing the backplate, consequently has not only improved the yield of LED chip to reach the effect that improves LED chip transfer efficiency.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic flowchart illustrating a bulk transfer method for LED chips according to an embodiment of the present disclosure;

FIG. 2 is a schematic flow chart of step S20 of the bulk transfer method shown in FIG. 1;

FIG. 3 is a schematic diagram of the corresponding structure formed in step S21 of the bulk transfer method shown in FIG. 2;

FIG. 4 is a schematic diagram of the corresponding structure formed in step S22 of the bulk transfer method shown in FIG. 2;

FIG. 5 is a schematic diagram of the corresponding structure formed in step S23 of the bulk transfer method shown in FIG. 2;

FIG. 6 is a schematic diagram of the corresponding structure formed in step S24 of the bulk transfer method shown in FIG. 2;

FIG. 7 is a flowchart illustrating step S30 of the bulk transfer method shown in FIG. 1;

FIG. 8 is a schematic diagram of the corresponding structure formed in step S31 of the bulk transfer method shown in FIG. 7;

FIG. 9 is a schematic diagram illustrating a corresponding structure formed in step S32 of the bulk transfer method shown in FIG. 7;

FIG. 10 is a schematic diagram of the corresponding structure formed in step S33 of the bulk transfer method shown in FIG. 7;

FIG. 11 is a schematic diagram of the corresponding structure formed in step S34 of the bulk transfer method shown in FIG. 7;

FIG. 12 is a flowchart illustrating step S40 of the mass transfer method shown in FIG. 1;

FIG. 13 is a schematic diagram of the corresponding structure formed in step S41 of the bulk transfer method shown in FIG. 12;

FIG. 14 is a schematic diagram of the corresponding structure formed in step S42 of the bulk transfer method shown in FIG. 12;

FIG. 15 is a schematic diagram of the corresponding structure formed in step S43 of the bulk transfer method shown in FIG. 12;

FIG. 16 is a schematic diagram of the corresponding structure formed in step S44 in the bulk transfer method shown in FIG. 12.

Description of reference numerals:

10-a first growth substrate;

11-a second growth substrate;

12-a third growth substrate;

20-a first LED chip;

21-a second LED chip;

22-a third LED chip;

30-a non-conductive glue layer;

40-a display backplane;

41-solder;

50-a pressing tool;

S10-S40-step of mass transfer method of LED chip;

S21-S24-step S20 in the bulk transfer method of LED chips;

S31-S34-step S30 in the bulk transfer method of LED chips;

S41-S44-step S40 of the bulk transfer method for LED chips.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application.

The traditional LED display screen pixel is formed by combining LEDs with three primary colors of red, green and blue (RGB), and the pixel pitch reaches about 20mm due to the larger size of a packaging body. The Micro LED further reduces the chip size to be below 50 mu m along with the reduction of the chip size and the improvement of the packaging level, when in preparation, the Micro-LED carries out film formation, microminiaturization and array on the LED structure, after the size is reduced to about 1-10 mu m, a large quantity of addressing is transferred to a circuit substrate to form an ultra-small-spacing LED so as to realize high resolution, then a protective layer and electrodes are completed by utilizing physical precipitation, and then the Micro-LED is packaged to complete the display of the Micro-LED. Moreover, compared with the conventional LED, the Micro LED has higher photoelectric efficiency, higher brightness, higher contrast ratio and lower power consumption, and can realize flexible display by combining with a flexible panel. With the maturity of the manufacturing process and the reduction of the price, related products based on Micro LED chips are increasing in recent years. Currently, a Micro LED display panel includes a plurality of sub-pixel Rendering (SPR) pixel areas, and each SPR pixel area includes a first LED chip, a third LED chip, and a second LED chip. In general, in the manufacturing process of the display panel, the first LED chip, the third LED chip and the second LED chip need to be transferred from the respective growth substrates to the display backplane. However, since a certain distance must be kept between the growth substrate and the display backplane, the LED chips on the growth substrate are shifted during the laser lift-off transfer to the display backplane. Therefore, how to solve the problem that the LED chip on the growth substrate is shifted in the process of being peeled and transferred to the display backplane by the laser is an urgent need to be solved.

Based on this, the present application is expected to provide a solution to the above technical problem, which can solve the problem of LED chip shift during the process of laser lift-off transfer of LED chips on a growth substrate to a display backplane, and the details of which will be explained in the following embodiments.

The present disclosure provides a bulk transfer method of an LED chip, a display panel formed by the bulk transfer method, and a display device having the display panel.

Please refer to fig. 1, which is a flowchart illustrating a bulk transfer method of an LED chip according to an embodiment of the present disclosure, wherein the bulk transfer method is used for performing bulk transfer on the LED chip to achieve an effect of preventing the LED chip from tilting during the bulk transfer. As shown in fig. 1, in the embodiment of the present application, the method for transferring a large amount of LED chips at least includes the following steps.

S10, providing a display back plate, and arranging a non-conductive adhesive layer on one side of the display back plate;

s20, providing a first growth substrate, transferring the plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips with the display back plate;

s30, providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips with the display back plate;

s40, providing a third growth substrate, transferring the plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and electrically connecting the third LED chips with the display back plate.

In summary, according to the bulk transfer method of the LED chip of the present application, the non-conductive adhesive layer 30 is coated on the display backplane 40, so that the problem that the LED chip on the growth substrate is shifted in the process of being peeled off by the laser and transferred to the display backplane is solved. Wherein details regarding each step are set forth and described in detail in the examples that follow.

Referring to fig. 2, in the present embodiment, the step S20 at least includes the following steps.

And S21, providing a first growth substrate 10, and arranging a plurality of first LED chips 20 on one side of the first growth substrate 10 facing the non-conductive adhesive layer 30.

Specifically, in the embodiment of the present application, the first growth substrate 10 is a red LED chip growth substrate, and the first LED chip 20 is a red LED chip. As shown in fig. 3, a non-conductive glue layer 30 is coated on one side of the display back plate 40, and the solvent is removed by curing. Wherein the curing removal solvent can be cured by heating, and the display backplane 40 is a Thin Film Transistor (TFT) backplane. In the embodiment of the present application, the Non-Conductive adhesive layer 30 may be made of Non-Conductive Film (NCF). A first growth substrate 10 is provided, and a plurality of first LED chips 20 are temporarily attached by Chip On Wafer (COW) on a side of the first growth substrate 10 facing the display backplane 40.

S22, peeling off the first LED chip 20 at the preset position on the first growth substrate 10 onto the non-conductive adhesive layer 30, and removing the first growth substrate 10.

Specifically, in the present embodiment, as shown in fig. 4, the first LED chip 20 at a predetermined position on the first growth substrate 10 may be laser-peeled off from the first growth substrate 10 using a laser needle, the peeled first LED chip 20 is transferred to a corresponding position on the non-conductive adhesive layer 30, and the first growth substrate 10 and the first LED chip 20 that is not peeled off on the first growth substrate 10 are removed from the non-conductive adhesive layer 30 together. Wherein the laser is laser with wavelength of 248nm or 266nm.

S23, pressing the first LED chip 20 on the non-conductive adhesive layer 30, so that the first LED chip 20 and the solder 41 on the display back plate 40 realize metal eutectic bonding.

Specifically, in the embodiment of the present application, as shown in fig. 5, the peeled first LED chip 20 is temporarily adhered to the non-conductive adhesive layer 30 on the display back plate 40, and the first LED chip 20 on the non-conductive adhesive layer 30 is specifically pressed toward the display back plate 40 by a pressing tool 50 at a preset temperature and a preset weight, at this time, the first LED chip 20 presses the non-conductive adhesive layer 30 on the display back plate 40, so that the first LED chip 20 and the corresponding solder 41 on the display back plate 40 realize metal eutectic bonding. In the pressing process, the position of the non-conductive adhesive layer 30 where the peeled first LED chip 20 is not adhered is not affected by the pressing.

In the embodiment of the present application, the pressing tool 50 may be a soft pressing plate, and for example, the pressing tool 50 may be made of Polydimethylsiloxane (PDMS) or polyurethane material, the preset temperature is 100 ℃ to 150 ℃, and the preset weight is 2Kg to 10Kg.

And S24, welding the first LED chip 20 and the solder 41 on the display back plate 40 to finish the transfer of the first LED chip 20.

Specifically, in the embodiment of the present application, as shown in fig. 6, after the first LED chip 20 is metal-eutectic-bonded with the solder 41 on the display backplane 40, the first LED chip 20 is soldered with the solder 41 on the display backplane 40, thereby completing the transfer of the first LED chip 20.

Referring to fig. 7, in the present embodiment, the step S30 at least includes the following steps.

And S31, providing a second growth substrate 11, and arranging a plurality of second LED chips 21 on one side of the second growth substrate 11 facing the non-conductive adhesive layer 30.

Specifically, in the embodiment of the present application, the second growth substrate 11 is a green LED chip growth substrate, and the second LED chip 21 is a green LED chip. As shown in fig. 8, a second growth substrate 11 is provided, and a plurality of second LED chips 21 are temporarily attached by Chip On Wafer (COW) on a side of the second growth substrate 11 facing the display backplane 40.

And S32, peeling the second LED chip 21 at the preset position on the second growth substrate 11 to the non-conductive adhesive layer 30, and removing the second growth substrate 11.

Specifically, in the embodiment of the present application, as shown in fig. 9, a laser needle may be used to laser peel off the second LED chip 21 at a preset position on the second growth substrate 11 from the second growth substrate 11, the peeled second LED chip 21 is transferred to a corresponding position on the non-conductive adhesive layer 30, and the second growth substrate 11 and the un-peeled second LED chip 21 on the second growth substrate 11 are removed from the non-conductive adhesive layer 30 together. Wherein the laser is laser with wavelength of 248nm or 266nm.

And S33, pressing the second LED chip 21 on the non-conductive adhesive layer 30, so that the second LED chip 21 and the solder 41 on the display back plate 40 realize metal eutectic bonding.

Specifically, in the embodiment of the present application, as shown in fig. 10, the peeled second LED chip 21 is temporarily adhered to the non-conductive adhesive layer 30 on the display back plate 40, and the second LED chip 21 on the non-conductive adhesive layer 30 is pressed by a pressing tool 50 at a preset temperature and a preset weight in a direction toward the display back plate 40, at this time, the second LED chip 21 presses the non-conductive adhesive layer 30 on the display back plate 40, so that the second LED chip 21 and the corresponding solder 41 on the display back plate 40 realize metal eutectic bonding. In the pressing process, the position of the non-conductive adhesive layer 30 where the peeled second LED chip 21 is not adhered is not affected by the pressing.

In the embodiment of the application, the preset temperature is 100-150 ℃, and the preset weight is 2Kg-10Kg.

S34, welding the second LED chip 21 and the solder 41 on the display back plate 40 to finish the transfer of the second LED chip 21.

Specifically, in the embodiment of the present application, as shown in fig. 11, after the second LED chip 21 is metal-eutectic-bonded with the solder 41 on the display back plate 40, the second LED chip 21 is soldered with the solder 41 on the display back plate 40, thereby completing the transfer of the second LED chip 21.

Referring to fig. 12, in the present embodiment, the step S40 at least includes the following steps.

And S41, providing a third growth substrate 12, and adhering a plurality of third LED chips 22 on one side of the third growth substrate 12 facing the non-conductive glue layer 30.

Specifically, in the embodiment of the present application, the third growth substrate 12 is a blue LED chip growth substrate, and the third LED chip 22 is a blue LED chip. As shown in fig. 13, a third growth substrate 12 is provided, and a plurality of third LED chips 22 are temporarily attached by Chip On Wafer (COW) on a side of the third growth substrate 12 facing the display backplane 40.

S42, peeling the third LED chip 22 at the predetermined position on the third growth substrate 12 to the non-conductive adhesive layer 30, and removing the third growth substrate 12.

Specifically, in the embodiment of the present application, as shown in fig. 14, a laser needle may be used to laser peel off the third LED chip 22 at a predetermined position from the third growth substrate 12, the peeled third LED chip 22 is transferred to a corresponding position on the non-conductive adhesive layer 30, and the third growth substrate 12 and the third LED chip 22 that is not peeled off on the third growth substrate 12 are collectively removed from the non-conductive adhesive layer 30. Wherein the laser is laser with wavelength of 248nm or 266nm.

And S43, pressing the third LED chip 22 on the non-conductive adhesive layer 30, so that the third LED chip 22 and the solder 41 on the display back plate 40 realize metal eutectic bonding.

Specifically, in the embodiment of the present application, as shown in fig. 15, the peeled third LED chip 22 is temporarily adhered to the non-conductive adhesive layer 30 on the display back plate 40, and the third LED chip 22 on the non-conductive adhesive layer 30 is pressed by a pressing tool 50 at a preset temperature and a preset weight in a direction toward the display back plate 40, at this time, the third LED chip 22 presses the non-conductive adhesive layer 30 on the display back plate 40, so that the third LED chip 22 and the corresponding solder 41 on the display back plate 40 realize metal eutectic bonding. In the pressing process, the position of the non-conductive adhesive layer 30 where the peeled second LED chip 21 is not adhered is not affected by the pressing.

And S44, welding the third LED chip 22 with the solder 41 on the display back plate 40 to complete the transfer of the third LED chip 22.

Specifically, in the embodiment of the present application, as shown in fig. 16, after the third LED chip 22 is metal-eutectic-bonded with the solder 41 on the display backplane 40, the third LED chip 22 is soldered with the solder 41 on the display backplane 40, thereby completing the transfer of the third LED chip 22.

In summary, in the bulk transfer method of the LED chips of the present application, the non-conductive adhesive layer 30 is coated on the display back plate 40, so that the problem that the LED chips on the growth substrate shift in the process of being peeled off by the laser and transferred to the display back plate is solved, and therefore, the yield of the LED chips is improved, and the transfer efficiency of the LED chips is improved.

The embodiment of the present application further provides a display panel, which includes the display backplane 40 shown in the above embodiment, and the first LED chip 20, the second LED chip 21, and the third LED chip 22 transferred onto the display backplane 40 by the bulk transfer method described in the above embodiment. Wherein the first LED chip 20, the second LED chip 21 and the third LED chip 22 constitute a plurality of pixel regions. It is understood that the first LED chip 20, the second LED chip 21 and the third LED chip 22 may be a red LED chip, a green LED chip or a blue LED chip, respectively, which are different from each other. In other embodiments, the display panel may further include a display area and a non-display area, wherein the display area is used for displaying images, and the non-display area is disposed around the display area and is not used for displaying images. The display panel may use a liquid crystal material as a display medium, but the application is not limited thereto.

It is understood that the display panel can be used for electronic devices including functions such as a Personal Digital Assistant (PDA) and/or a music player, such as a mobile phone, a tablet computer, a wearable electronic device with wireless communication function (e.g., a smart watch), and the like. The electronic device may also be other electronic devices such as a Laptop computer (Laptop) with a touch sensitive surface (e.g., a touch panel), etc. In some embodiments, the electronic device may have a communication function, that is, may establish communication with a network through a 2G (second generation mobile phone communication specification), a 3G (third generation mobile phone communication specification), a 4G (fourth generation mobile phone communication specification), a 5G (fifth generation mobile phone communication specification), or a W-LAN (wireless local area network) or a communication method that may appear in the future. For the sake of brevity, no further limitations are intended to this embodiment of the present application.

The embodiment of the present application further provides a display device, which includes a supporting frame and the display panel in the above embodiment, where the supporting frame is used to support the display panel. Wherein the display device includes, but is not limited to: any electronic device or component with a display function, such as a Mini LED panel, a Mirco LED panel, a mobile phone, a tablet computer, a navigator, a display, etc., is not specifically limited in this application. It is to be understood that the display device may further include: the pixel circuit is arranged in a display area in the display panel and is used for displaying images; and the circuit board assembly is used for providing an operating voltage, a driving current and a corresponding functional signal.

It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.

Claims

1. A method for transferring LED chips in bulk, comprising:

providing a display back plate, and arranging a non-conductive adhesive layer on one side of the display back plate;

providing a first growth substrate, transferring a plurality of first LED chips on the first growth substrate to the non-conductive adhesive layer, and electrically connecting the first LED chips with the display back plate;

providing a second growth substrate, transferring a plurality of second LED chips on the second growth substrate to the non-conductive adhesive layer, and electrically connecting the second LED chips with the display back plate;

providing a third growth substrate, transferring a plurality of third LED chips on the third growth substrate to the non-conductive adhesive layer, and electrically connecting the third LED chips with the display back plate.

2. The method for bulk transfer of LED chips of claim 1, wherein said providing a first growth substrate, transferring a plurality of first LED chips on said first growth substrate to said non-conductive glue layer, electrically connecting said first LED chips to said display backplane, comprises:

providing a first growth substrate, and arranging a plurality of first LED chips on one side of the first growth substrate, which faces the non-conductive adhesive layer;

peeling the first LED chip at a preset position on the first growth substrate to the non-conductive adhesive layer, and removing the first growth substrate;

pressing the first LED chip on the non-conductive adhesive layer to enable the first LED chip and the solder on the display back plate to realize metal eutectic bonding;

and welding the first LED chip and the welding flux on the display back plate to finish the transfer of the first LED chip.

3. The method for bulk transfer of LED chips according to claim 1, wherein said providing a second growth substrate, transferring a plurality of second LED chips on said second growth substrate to said non-conductive glue layer, electrically connecting said second LED chips to said display backplane, comprises:

providing a second growth substrate, and arranging a plurality of second LED chips on one side of the second growth substrate, which faces the non-conductive glue layer;

peeling the second LED chip at a preset position on the second growth substrate to the non-conductive adhesive layer, and removing the second growth substrate;

pressing the second LED chip on the non-conductive adhesive layer to enable the second LED chip and the solder on the display back plate to realize metal eutectic bonding;

and welding the second LED chip with the solder on the display back plate to finish the transfer of the second LED chip.

4. The method for bulk transfer of LED chips of claim 1, wherein said providing a third growth substrate, transferring a plurality of third LED chips on said third growth substrate to said non-conductive glue layer, and electrically connecting said second LED chips to said display backplane comprises:

providing a third growth substrate, and adhering a plurality of third LED chips on one side of the third growth substrate, which faces the non-conductive glue layer;

peeling the third LED chip at a preset position on the third growth substrate to the non-conductive adhesive layer, and removing the third growth substrate;

pressing the third LED chip on the non-conductive adhesive layer to enable the third LED chip and the solder on the display back plate to realize metal eutectic bonding;

and welding the third LED chip and the solder on the display backboard to finish the transfer of the third LED chip.

5. The method for massively transferring LED chips according to any one of claims 2 to 4, further comprising:

laser stripping the first LED chip at the preset position on the first growth substrate from the first growth substrate by using a laser needle; and/or the presence of a gas in the gas,

laser stripping the second LED chip at the preset position on the second growth substrate from the second growth substrate by using a laser needle; and/or the presence of a gas in the atmosphere,

laser stripping the third LED chip at the preset position on the third growth substrate from the third growth substrate by using a laser needle;

wherein the wavelength of the laser is 248nm or 266nm.

6. The method for massively transferring LED chips according to any one of claims 2 to 4, further comprising:

pressing the first LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate through a pressing tool at a preset temperature and a preset weight; and/or the presence of a gas in the gas,

pressing the second LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate through the pressing tool at the preset temperature and the preset weight; and/or the presence of a gas in the gas,

and pressing the third LED chip on the non-conductive adhesive layer in a targeted manner towards the display back plate by the pressing tool at the preset temperature and the preset weight.

7. The method for bulk transfer of LED chips as recited in claim 6, wherein said bonding tool is made of polydimethylsiloxane or polyurethane material, said predetermined temperature is 100 ℃ to 150 ℃, and said predetermined weight is 2Kg to 10Kg.

8. The method for bulk transfer of LED chips of claim 1, wherein said display backplane is a thin film field effect transistor backplane and said non-conductive glue layer is made of a non-conductive glue.

9. A display panel comprising the display backplane of any one of claims 1 to 8 and first, second and third LED chips transferred onto the display backplane by the mass transfer method.

10. A display device comprising a support frame for supporting the display panel and the display panel according to claim 9.