WO2023013703A1 - 熱電変換素子 - Google Patents

熱電変換素子 Download PDF

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Publication number
WO2023013703A1
WO2023013703A1 PCT/JP2022/029862 JP2022029862W WO2023013703A1 WO 2023013703 A1 WO2023013703 A1 WO 2023013703A1 JP 2022029862 W JP2022029862 W JP 2022029862W WO 2023013703 A1 WO2023013703 A1 WO 2023013703A1
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WIPO (PCT)
Prior art keywords
thermoelectric conversion
conversion element
magnetic
element according
magnetic material
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PCT/JP2022/029862
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English (en)
French (fr)
Japanese (ja)
Inventor
知 中辻
友也 肥後
宏和 田中
陽介 中西
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Nitto Denko Corp
University of Tokyo NUC
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Nitto Denko Corp
University of Tokyo NUC
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Application filed by Nitto Denko Corp, University of Tokyo NUC filed Critical Nitto Denko Corp
Priority to US18/681,551 priority Critical patent/US20240341192A1/en
Priority to KR1020247007342A priority patent/KR20240038098A/ko
Priority to EP22853121.6A priority patent/EP4383993A4/en
Priority to JP2023540399A priority patent/JPWO2023013703A1/ja
Priority to CN202280055164.7A priority patent/CN117837302A/zh
Publication of WO2023013703A1 publication Critical patent/WO2023013703A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/20—Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N10/00—Electric motors using thermal effects
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H02N11/002—Generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Definitions

  • the present invention relates to thermoelectric conversion elements.
  • thermoelectric conversion elements that utilize the magneto-thermoelectric effect are known.
  • Patent Document 1 describes a thermoelectric power generation device that utilizes the anomalous Nernst effect.
  • the anomalous Nernst effect is a phenomenon in which a voltage is generated in a direction orthogonal to both the magnetization direction and the temperature gradient when a heat flow is applied to a magnetic material and a temperature difference is generated.
  • a thermoelectric generator device includes a substrate, a generator, and a connector. At least the surface layer of the substrate is made of MgO.
  • the power generator consists of a plurality of thin wires arranged parallel to each other along the surface of the substrate. Each wire is made of ferromagnetic material and is magnetized in the same direction.
  • the connecting body consists of a plurality of thin wires arranged parallel to and between the thin wires of the power generating body.
  • Each thin wire of the connector electrically connects one end of each thin wire of the power generating body and the other end of the adjacent thin wire on one side of each thin wire.
  • Patent Document 2 describes a thermoelectric conversion element having a thermoelectric mechanism that generates an electromotive force due to the anomalous Nernst effect. According to the formula (1) of Patent Document 2, it is understood that the Nernst coefficient Syx is in a proportional relationship with the reciprocal of electrical conductivity, that is, with specific resistance.
  • Patent Document 1 in order to form a crystal structure with a large magneto-thermoelectric effect, a substrate with at least a surface layer made of MgO is required. Thus, the technique described in Patent Document 1 requires a special base material. Patent Literature 1 does not specifically consider the problem in producing a thermoelectric conversion element using a non-special base material such as a base material containing an organic material. Therefore, the present inventors have attempted to produce a thermoelectric conversion element using a non-special base material such as a base material containing an organic material.
  • Patent Document 2 when increasing the Nernst coefficient in a thermoelectric conversion element that utilizes the magneto-thermoelectric effect, it is considered advantageous to increase the specific resistance of the material.
  • Patent Literatures 1 and 2 do not specifically consider the problem associated with increasing the resistivity of the material. According to the study of the present inventors, it was found that increasing the specific resistance of the material causes problems such as generation of noise and reduction in power generation output.
  • the present invention provides a thermoelectric conversion element that is advantageous from the viewpoint of improving the thermoelectric conversion performance even when using a non-special base material such as a base material containing an organic material while keeping the specific resistance of the magnetic material low.
  • a non-special base material such as a base material containing an organic material while keeping the specific resistance of the magnetic material low.
  • the present invention a substrate; and a magnetic body having ferromagnetism or antiferromagnetism disposed on the base material,
  • the ratio of the measured density of the magnetic material to the theoretical density of the magnetic material is 0.80 or more.
  • a thermoelectric conversion element is provided.
  • thermoelectric conversion element is advantageous from the viewpoint of improving the thermoelectric conversion performance even when using a non-special base material such as a base material containing an organic material while keeping the specific resistance of the magnetic material low.
  • FIG. 1 is a perspective view showing one example of a thermoelectric conversion element according to the present invention.
  • FIG. 2 is a cross-sectional view of the thermoelectric conversion element taken along plane II shown in FIG.
  • the thermoelectric conversion element 1a includes a substrate 10 and a magnetic body 21. As shown in FIG.
  • the magnetic body 21 is arranged on the substrate 10 and has ferromagnetism or antiferromagnetism.
  • a ratio D/D 0 of the actually measured density D of the magnetic substance 21 to the theoretical density D 0 of the magnetic substance 21 is 0.80 or more.
  • the theoretical density D 0 and the measured density D of the magnetic material 21 can be determined, for example, according to the method described in Examples. 1 and 2, the X-axis, Y-axis, and Z-axis are orthogonal to each other, and the Z-axis direction is the thickness direction of the base material 10 .
  • the ratio D/D 0 in the magnetic body 21 may be 0.82 or more, 0.84 or more, 0.90 or more, or 0.95 or more. , 1.00 or more.
  • the ratio D/D 0 in the magnetic body 21 is, for example, 1.1 or less.
  • the magnetic body 21 is not limited to a specific material as long as the ratio D/D 0 in the magnetic body 21 is 0.80 or more.
  • the magnetic body 21 generates an electromotive force in a direction orthogonal to the thickness direction of the substrate 10 when a temperature gradient ⁇ T is generated in the thickness direction (Z-axis direction) of the substrate 10, for example.
  • a temperature gradient ⁇ T is generated in the thickness direction (Z-axis direction) of the substrate 10
  • thermoelectric conversion element 1a For example, by increasing the dimension of the magnetic body 21 in a specific direction along the main surface of the substrate 10, the electric power generated by the temperature gradient ⁇ T in the thermoelectric conversion element 1a can be increased. Therefore, it is easy to reduce the thickness of the thermoelectric conversion element 1a.
  • the magnetic body 21 generates an electromotive force by, for example, the magneto-thermoelectric effect.
  • the magneto-thermoelectric effect is, for example, the anomalous Nernst effect or the spin Seebeck effect.
  • the magnetic material 21 includes, for example, a material exhibiting the anomalous Nernst effect. Substances exhibiting the anomalous Nernst effect are not limited to specific substances. A material exhibiting the anomalous Nernst effect is, for example, a magnetic material having a saturation magnetic susceptibility of 5 ⁇ 10 ⁇ 3 T or more or a material having a band structure having a Weyl point near the Fermi energy.
  • the magnetic body 21 contains at least one substance selected from the group consisting of the following (i), (ii), (iii), (iv), and (v) as a substance exhibiting the anomalous Nernst effect. .
  • a stoichiometric substance having a composition represented by Fe 3 X (ii) an off-stoichiometric substance in which the composition ratio of Fe and X deviates from the substance (i) above (iii) the above ( A substance (iv) Fe 3 M1 1-x M2 x (iv) in which a part of the Fe site of the substance i) or part of the Fe site of the substance (ii) is replaced with a typical metal element other than X or a transition element (v) a substance having a composition represented by 0 ⁇ x ⁇ 1), wherein M1 and M2 are different representative elements; , a substance in which a part of the X site of the substance (i) above is replaced with a main group metal element other than X
  • X is a typical element or a transition element.
  • X is, for example, Al, Ga, Ge, Sn, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Sc, Ni, Mn, or Co.
  • the combination of M1 and M2 is not limited to a specific combination as long as M1 and M2 are representative elements different from each other.
  • the combination of M1 and M2 is Ga and Al, Si and Al, or Ga and B, for example.
  • the magnetic material 21 may contain Co 2 MnGa or Mn 3 Sn as a substance exhibiting the anomalous Nernst effect.
  • the magnetic body 21 is formed, for example, in a rectangular parallelepiped shape elongated in a specific direction (Y-axis direction) extending along the main surface of the base material 10 .
  • the magnetic body 21 is magnetized, for example, in the negative direction of the X axis.
  • the dimension of the magnetic body 21 in the Y-axis direction is larger than the dimension of the magnetic body 21 in the Z-axis and the X-axis, and the electromotive force generated by the magneto-thermoelectric effect tends to increase. Therefore, even if the magnetic body 21 does not have a large thickness, the electromotive force generated in the thermoelectric conversion element 1a tends to increase.
  • the thermoelectric conversion element 1a includes, for example, conductive paths 25.
  • Conductive path 25 includes magnetic material 21 and forms a meander pattern.
  • the length of the conductive path 25 tends to increase, and the electromotive force generated in the thermoelectric conversion element 1a tends to increase.
  • a heat flow can be generated in the thickness direction of the base material 10 by applying a voltage between the one end portion 25p and the other end portion 25q.
  • the conductive path 25 includes a plurality of magnetic bodies 21.
  • the plurality of magnetic bodies 21 are, for example, separated at predetermined intervals in the X-axis direction and arranged parallel to each other.
  • the plurality of magnetic bodies 21 are arranged at regular intervals in the X-axis direction.
  • Conductive path 25 further comprises, for example, a plurality of connectors 22 .
  • the connection bodies 22 electrically connect the magnetic bodies 21 adjacent to each other in the X-axis direction.
  • the connector 22 electrically connects, for example, one end of the magnetic body 21 in the Y-axis direction and the other end in the Y-axis direction of another magnetic body 21 adjacent to the magnetic body 21 .
  • the plurality of magnetic bodies 21 are electrically connected in series, and the electromotive force generated in the thermoelectric conversion element 1a tends to increase.
  • One end of the plurality of magnetic bodies 21 in the Y-axis direction is located at the end of the magnetic body 21 on the same side in the Y-axis direction, and the other end of the plurality of magnetic bodies 21 in the Y-axis direction is located on the same side of the magnetic body 21 . 21 in the Y-axis direction.
  • connection body 22 is formed, for example, in the shape of a rectangular parallelepiped elongated in the Y-axis direction.
  • the material forming the connecting body 22 is not limited to a specific material.
  • the connector 22 may contain a substance that generates an electromotive force by a magneto-thermoelectric effect, and may have ferromagnetism or antiferromagnetism, for example. In this case, the connector 22 is magnetized, for example, in the positive direction of the X-axis.
  • the connector 22 may contain a non-magnetic material.
  • the material forming the connector 22 is, for example, a transition element having paramagnetism.
  • the non-magnetic material contained in the connector 22 is, for example, gold, copper, copper alloy, aluminum, or aluminum alloy.
  • the connector 22 may be a cured conductive paste.
  • Substrate 10 is not limited to a specific substrate as long as the ratio D/D 0 in magnetic body 21 is 0.80 or more.
  • the base material 10 has flexibility, for example. Thereby, the thermoelectric conversion elements 1a can be arranged along the curved surface.
  • the base material 10 is, for example, a strip-shaped test piece made from the base material 10. When the test piece is wound around a cylindrical mandrel with a diameter of 10 cm so that both ends of the test piece in the length direction are oriented in the same direction, the The test piece has elasticity that allows it to be elastically deformed.
  • the base material 10 may be a non-flexible material such as a glass base material.
  • the substrate 10 When the substrate 10 has flexibility, the substrate 10 contains at least an organic polymer, for example. Thereby, it is easy to reduce the manufacturing cost of the thermoelectric conversion element 1a.
  • organic polymers are polyethylene terephthalate (PET), polyethylene naphthalate (PEN), acrylic resin (PMMA), polycarbonate (PC), polyimide (PI) or cycloolefin polymer (COP).
  • the glass transition temperature Tg of the substrate 10 is not limited to a specific value.
  • the glass transition temperature Tg of the substrate 10 is, for example, 200° C. or lower.
  • a material having a glass transition temperature Tg of 200° C. or less can be used as the base material. As a result, it is easy to reduce the energy required for manufacturing the thermoelectric conversion element 1a.
  • the magnetic body 21 is formed as a sputtering film, the sputtered material is diffused into the base material 10.
  • Cheap As a result, the adhesion between the substrate 10 and the magnetic body 21 tends to be high.
  • the glass transition temperature Tg of the substrate 10 may be 180°C or lower, 150°C or lower, 120°C or lower, or 100°C or lower.
  • the glass transition temperature Tg of the substrate 10 is, for example, 50° C. or higher.
  • the squareness ratio M r /M s of the magnetic body 21 is not limited to a specific value.
  • the squareness ratio M r /M s is the ratio of the residual magnetic susceptibility M r to the saturation magnetic susceptibility M s in the MH curve of the magnetic material 21 .
  • the value of the squareness ratio M r /M s is, for example, 0.6 or more.
  • the squareness ratio M r /M s of the magnetic body 21 may be 0.62 or more, 0.63 or more, 0.64 or more, or 0.65 or more. may be 0.66 or more.
  • the squareness ratio M r /M s of the magnetic body 21 may be 0.7 or more, 0.8 or more, or 0.9 or more.
  • the residual magnetic susceptibility M r of the magnetic body 21 is not limited to a specific value.
  • the magnetic material 21 has a residual magnetic susceptibility M r of 500 emu/cm 3 or more.
  • the residual magnetic susceptibility M r of the magnetic body 21 may be 550 emu/cm 3 or more, 600 emu/cm 3 or more, 650 emu/cm 3 or more, or 700 emu/cm 3 or more. It may be 800 emu/cm 3 or more.
  • the residual magnetic susceptibility M r of the magnetic body 21 may be 900 emu/cm 3 or more, 1000 emu/cm 3 or more, 1200 emu/cm 3 or more, or 1300 emu/cm 3 or more. It may be 1400 emu/cm 3 or more.
  • the residual magnetic susceptibility M r of the magnetic body 21 is, for example, 2000 emu/cm 3 or less.
  • the residual magnetic susceptibility M r of the magnetic body 21 may be 1900 emu/cm 3 or less, 1800 emu/cm 3 or less, 1700 emu/cm 3 or less, or 1600 emu/cm 3 or less. It may be less than or equal to 1500 emu/cm 3 .
  • the maximum value of the slope of the MH curve of the magnetic material 21 is not limited to a specific value.
  • the maximum value of the slope of the MH curve of the magnetic material 21 is, for example, 1.5 emu/(cm 3 ⁇ Oe) or more.
  • the maximum value of the slope of the MH curve of the magnetic material 21 may be 5 emu/(cm 3 ⁇ Oe) or more, 10 emu/(cm 3 ⁇ Oe) or more, or 20 emu/(cm 3 ) . ⁇ Oe) or more, or 50 emu/(cm 3 ⁇ Oe) or more.
  • the magnetic body 21 forms, for example, a film.
  • the magnetic body 21 is not limited to a specific film as long as the ratio D/D 0 in the magnetic body 21 is 0.80 or more.
  • the magnetic body 21 is, for example, a sputtering film.
  • the magnetic material 21 is likely to be formed as a high-density film, noise generation is likely to be more reliably suppressed, and the power generation output of the thermoelectric conversion element 1a is likely to be increased.
  • the magnetic body 21 may be a film other than the sputtering film.
  • the magnetic body 21 may be, for example, a deposited film or a plated film.
  • the magnetic body 21 is, for example, a non-sintered body.
  • the thickness of the base material 10 is not limited to a specific value as long as the ratio D/D 0 in the magnetic body 21 is 0.80 or more.
  • the thickness of the base material 10 is, for example, 200 ⁇ m or less. As a result, the thermal resistance of the thermoelectric conversion element 1a in the thickness direction of the substrate 10 tends to be low.
  • the thickness of the base material 10 may be 190 ⁇ m or less, 180 ⁇ m or less, 170 ⁇ m or less, or 160 ⁇ m or less.
  • the thickness of the base material 10 may be 150 ⁇ m or less, 140 ⁇ m or less, 130 ⁇ m or less, 120 ⁇ m or less, or 110 ⁇ m or less.
  • the thickness of the base material 10 may be 100 ⁇ m or less, 90 ⁇ m or less, 80 ⁇ m or less, 70 ⁇ m or less, or 60 ⁇ m or less.
  • the thickness of the base material 10 is, for example, 10 ⁇ m or more. Thereby, the base material 10 can be easily transported, and the base material 10 can easily have desired handleability.
  • the thickness of the base material 10 may be 20 ⁇ m or more, or may be 30 ⁇ m or more.
  • the thickness of the magnetic body 21 is not limited to a specific value as long as the ratio D/D 0 in the magnetic body 21 is 0.80 or more.
  • the magnetic body 21 has a thickness of 1000 nm or less, for example. This makes it possible to reduce the amount of material used for forming the magnetic body 21 in the thermoelectric conversion element 1a, thereby easily reducing the manufacturing cost of the thermoelectric conversion element 1a. In addition, disconnection of the conductive path 25 is less likely to occur in the thermoelectric conversion element 1a.
  • the thickness of the magnetic body 21 may be 750 nm or less, 500 nm or less, 400 nm or less, 300 nm or less, or 200 nm or less.
  • the thickness of the magnetic body 21 is, for example, 10 nm or more. This makes it easy for the thermoelectric conversion element 1a to exhibit high durability.
  • the thickness of the magnetic body 21 may be 20 nm or more, 30 nm or more, or 50 nm or more.
  • each magnetic body 21 is not limited to a specific value.
  • the width of each magnetic body 21 is, for example, 500 ⁇ m or less. This makes it possible to reduce the amount of material used for forming the magnetic body 21 in the thermoelectric conversion element 1a, thereby easily reducing the manufacturing cost of the thermoelectric conversion element 1a. In addition, it is easy to arrange many magnetic bodies 21 in the X-axis direction, and the electromotive force generated in the thermoelectric conversion element 1a tends to be large.
  • the width of each magnetic body 21 may be 400 ⁇ m or less, 300 ⁇ m or less, 200 ⁇ m or less, 100 ⁇ m or less, or 50 ⁇ m or less.
  • the width of each magnetic body 21 is, for example, 0.1 ⁇ m or more. As a result, disconnection of the conductive path 25 is less likely to occur in the thermoelectric conversion element 1a, and the thermoelectric conversion element 1a tends to exhibit high durability.
  • the width of each magnetic body 21 may be 0.5 ⁇ m or more, 1 ⁇ m or more, 2 ⁇ m or more, 5 ⁇ m or more, or 10 ⁇ m or more, It may be 20 ⁇ m or more, 30 ⁇ m or more, or 50 ⁇ m or more.
  • the thickness of the connecting body 22 is not limited to a specific value.
  • the thickness of the connector 22 is, for example, 1000 nm or less. This makes it possible to reduce the amount of material used for forming the connection body 22, and it is easy to reduce the manufacturing cost of the thermoelectric conversion element 1a. In addition, disconnection of the conductive path 25 is less likely to occur in the thermoelectric conversion element 1a.
  • the thickness of the connector 22 may be 750 nm or less, 500 nm or less, 400 nm or less, 300 nm or less, or 200 nm or less.
  • the thickness of the connector 22 is, for example, 5 nm or more. This makes it easy for the thermoelectric conversion element 1a to exhibit high durability.
  • the thickness of the connector 22 may be 10 nm or more, 20 nm or more, 30 nm or more, or 50 nm or more.
  • the width which is the minimum dimension of each connecting body 22 in the X-axis direction, is not limited to a specific value.
  • the width of each connector 22 is, for example, 500 ⁇ m or less.
  • the width of each connector 22 may be 400 ⁇ m or less, 300 ⁇ m or less, 200 ⁇ m or less, 100 ⁇ m or less, or 50 ⁇ m or less.
  • the width of each connector 22 is, for example, 0.1 ⁇ m or more. As a result, disconnection of the conductive path 25 is less likely to occur in the thermoelectric conversion element 1a, and the thermoelectric conversion element 1a tends to exhibit high durability.
  • the width of each connector 22 may be 0.5 ⁇ m or more, 1 ⁇ m or more, 2 ⁇ m or more, 5 ⁇ m or more, or 10 ⁇ m or more. It may be 20 ⁇ m or more, or may be 30 ⁇ m or more.
  • thermoelectric conversion element 1a An example of a method for manufacturing the thermoelectric conversion element 1a will be described.
  • a thin film of a precursor of the magnetic material 21 is formed on one main surface of the base material 10 by a method such as sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), ion plating, and plating.
  • CVD chemical vapor deposition
  • PLD pulsed laser deposition
  • a photoresist is then applied over the thin film, a photomask is placed over the thin film and exposed to light, followed by a wet etch. Thereby, a linear pattern of precursors of a plurality of magnetic bodies 21 arranged at predetermined intervals is formed.
  • a thin film of a precursor of the connection bodies 22 is formed on one main surface of the base material 10 by sputtering, CVD, PLD, ion plating, plating, or the like.
  • a photoresist is applied on the thin film of the precursor of the connection body 22, a photomask is placed on the thin film of the precursor of the connection body 22, exposure is performed, and then wet etching is performed.
  • the connection body 22 is obtained, and the linear patterns of the precursor of the magnetic body 21 are electrically connected to each other.
  • the magnetic body 21 is formed by magnetizing the precursor of the magnetic body 21 .
  • the thermoelectric conversion element 1a is obtained.
  • the connector 22 may be formed by magnetizing the precursor of the connector 22 .
  • the ratio D/D 0 in the magnetic material 21 can be adjusted within a desired range.
  • the ratio D/D 0 can be adjusted to any desired range.
  • the pressure of the atmosphere of the substrate 10 where sputtering is performed is a specific value as long as the ratio D/D 0 in the magnetic material 21 is 0.80 or more. is not limited to The pressure may be, for example, 2.5 Pa or less, or 2.0 Pa or less. The pressure is desirably 0.5 Pa or less. As a result, even when the substrate 10 contains an organic material such as an organic polymer, the density of the magnetic bodies 21 tends to be high, and the ratio D/D 0 tends to be 0.80 or more.
  • the pressure of the atmosphere of the substrate 10 to be sputtered is more preferably 0.3 Pa or less, more preferably 0.2 Pa or less, and particularly preferably 0.1 Pa or less. Moreover, the pressure is desirably 0.05 Pa or higher. As a result, even when the target is a magnetic material, discharge is likely to occur, and a thin film can be stably formed.
  • the TS distance which is the distance between the target material and the base material 10
  • the TS distance is, for example, 120 mm or less.
  • the TS distance is preferably 100 mm or less, more preferably 80 mm or less, and even more preferably 60 nm or less.
  • the TS distance is, for example, 40 mm or more. In this case, even if the target is a magnetic material, discharge is likely to occur, and a thin film can be stably formed.
  • the magnetic field is not limited to a specific value as long as the ratio D/D 0 in the magnetic material 21 is 0.80 or more.
  • the magnetic field is for example 150 mT or less.
  • the density of the magnetic bodies 21 tends to be high, and the ratio D/D 0 tends to be 0.80 or more.
  • the magnetic field is, for example, 30 mT or more. In this case, even if the target is a magnetic material, discharge is likely to occur, and a thin film can be stably formed.
  • the thermoelectric conversion element 1a may be provided with, for example, an adhesive layer.
  • the substrate 10 is arranged between the magnetic body 21 and the adhesive layer in the thickness direction of the substrate 10 .
  • the thermoelectric conversion element 1a can be attached to the article by pressing the adhesive layer against the article.
  • the adhesive layer contains, for example, a rubber-based adhesive, an acrylic adhesive, a silicone-based adhesive, or a urethane-based adhesive.
  • Thermoelectric conversion element 1a may be provided together with an adhesive layer and a separator.
  • the separator covers the adhesive layer.
  • a separator is typically a film that can maintain the adhesive strength of the adhesive layer when covering the adhesive layer and that can be easily peeled off from the adhesive layer.
  • the separator is, for example, a film made of polyester resin such as PET. By peeling off the separator, the adhesive layer is exposed, and the thermoelectric conversion element 1a can be attached to an article.
  • thermoelectric conversion element according to each example and each comparative example was measured by the eddy current method in accordance with Japanese Industrial Standards (JIS) Z 2316. Sheet resistance was measured. The thickness of the magnetic material of the thermoelectric conversion element according to each example and each comparative example was determined from the above XRR measurement results. In each example and each comparative example, the specific resistance of the magnetic material was determined from the sheet resistance and thickness of the magnetic material. Table 2 shows the results.
  • thermoelectric conversion elements according to each example and each comparative example, the electrical resistance value between both ends of the conductive path forming the meander pattern was measured. Table 2 shows the results.
  • the magnetic physical properties of the magnetic material of the thermoelectric conversion element according to each example and each comparative example were measured using a physical property measuring device PPMS-versalab manufactured by Quantum Design. For this measurement, measurement samples prepared by cutting the thermoelectric conversion elements according to each example and each comparative example into 2 mm squares were used. In addition, in the measurement, a vibration sample magnetrometer (VSM) was used, a magnetic field of ⁇ 10000 [Oe] was swept at a temperature of 300 K, and the thickness of the magnetic material and the magnetic material in the measurement sample were determined from the XRR measurement results. Considering the area of , the saturation susceptibility Ms and the residual susceptibility Mr of the magnetic material were determined.
  • VSM vibration sample magnetrometer
  • the magnetic moment of the magnetic material at a magnetic flux density of 1 T is determined as the saturation magnetic susceptibility Ms of the magnetic material
  • the magnetic moment of the magnetic material at a magnetic flux density of 0 T is determined as the remanent magnetic susceptibility Mr of the magnetic material. Decided.
  • the ratio Mr/Ms of the residual magnetic susceptibility Mr to the saturation magnetic susceptibility Ms was determined as the squareness ratio. Table 2 shows the results.
  • thermoelectric conversion element according to each example and each comparative example was fixed between a pair of Cu plates having dimensions of 30 mm, 30 mm, and 5 mm using Shin-Etsu Chemical Co., Ltd.'s silicone grease KS609, and the thermoelectric properties were measured.
  • a sample for evaluation was produced. The sample was placed on the cooling plate SCP-125 from AS ONE.
  • a film heater manufactured by Shinwa Kiseki Co., Ltd. was fixed on the upper Cu plate with double-sided tape No. 5000NS manufactured by Nitto Denko. The heater had dimensions of 30 mm square and an electrical resistance of 20 ohms.
  • the film heater was heated under constant voltage control of 10 V, and the amount of heat output from the film heater was adjusted to 0.52 W/cm 2 .
  • a data logger was used to measure the electromotive force generated in the thermoelectric conversion element, and the value of the electromotive force in the steady state was read. Also, the noise and S/N ratio were obtained from the measurement results of the data logger. Table 2 shows the results.
  • Adhesion between the thin film formed on the substrate and the substrate was evaluated with reference to the cross-cut method of JIS K 5600-5-6.
  • a cutter knife was used to make 11 vertical and 11 horizontal cuts on the thin film at intervals of 1 mm to form a total of 100 squares in a grid pattern.
  • the tape was brought into contact with the thin film so as to cover 100 squares, and then the tape was grasped by the edge of the tape and peeled off in a direction at an angle of 60° to the surface of the thin film for 0.5 to 1.0 seconds to remove the thin film.
  • the state of peeling in 100 cells was visually confirmed. A case where all the squares remained without peeling was evaluated as "A”, and a case where one or more squares were confirmed to be peeled was evaluated as "X”. Table 2 shows the results.
  • Example 1 A thin film having a thickness of 96 nm was formed on a polyethylene terephthalate (PET) film having a thickness of 50 ⁇ m by DC magnetron sputtering using a target material containing Fe and Ga.
  • Table 1 shows the conditions for forming the thin film.
  • a magnet with a flux density of 100 mT was used in the DC magnetron sputtering.
  • the glass transition temperature of the PET film was 78°C.
  • DC magnetron sputtering the distance between the target material and the PET film was adjusted to 75 mm.
  • Argon gas was supplied at a pressure of 0.1 Pa as a process gas in DC magnetron sputtering. Also, the temperature of the PET film was adjusted to 130°C. A photoresist was applied on the thin film, a photomask was placed on the thin film, exposure was performed, and then wet etching was performed. As a result, 98 FeGa-containing linear patterns arranged at predetermined intervals were formed. The width of each FeGa-containing linear pattern was 100 ⁇ m, the length of each FeGa linear pattern was 15 mm, and the total length of the FeGa linear patterns was 147 cm. After that, a Cu thin film having a thickness of 100 nm was formed by DC magnetron sputtering using a target material containing Cu.
  • a photoresist was applied on the Cu thin film, a photomask was placed on the Cu thin film, exposure was performed, and then wet etching was performed.
  • a Cu-containing linear pattern having a width of 40 ⁇ m was thereby formed.
  • a pair of adjacent FeGa-containing linear patterns were electrically connected to each other by the Cu-containing linear pattern, forming a conductive path forming a meander pattern.
  • An electromagnet having a central magnetic flux density of 0.5 T is used to magnetize the FeGa-containing linear pattern in a direction parallel to the plane of the PET film and perpendicular to the length direction of the FeGa-containing linear pattern, and the magnetic material formed.
  • thermoelectric conversion element according to Example 1 was obtained. This thermoelectric conversion element generated an electromotive force based on the anomalous Nernst effect.
  • thermoelectric conversion element according to Example 2 was obtained in the same manner as in Example 1 except for the following points. As shown in Table 1, a glass plate was used as the substrate instead of the PET film. Argon gas was supplied as a process gas at a pressure of 0.5 Pa, and the distance between the target material and the substrate was adjusted to 80 mm.
  • thermoelectric conversion element according to Example 3 was obtained in the same manner as in Example 2, except that argon gas was supplied as a process gas at a pressure of 2 Pa.
  • Example 4 As shown in Table 1, in the same manner as in Example 1, except that argon gas was supplied as a process gas at a pressure of 0.5 Pa and the distance between the target material and the substrate was adjusted to 40 mm. A thermoelectric conversion element was obtained.
  • thermoelectric conversion element according to Example 5 was obtained in the same manner as in Example 4, except that the distance between the target material and the base material was adjusted to 60 mm.
  • thermoelectric conversion element according to Example 6 was obtained in the same manner as in Example 4, except that the distance between the target material and the base material was adjusted to 120 mm.
  • thermoelectric conversion element according to Comparative Example 1 was obtained in the same manner as in Example 2, except that argon gas was supplied as a process gas at a pressure of 3 Pa.
  • thermoelectric conversion element according to Comparative Example 2 was obtained in the same manner as in Example 4, except that the distance between the target material and the base material was adjusted to 180 mm.
  • thermoelectric conversion according to Comparative Example 3 was performed in the same manner as in Example 1 except that argon gas was supplied as the process gas at a pressure of 1 Pa and the distance between the target material and the base material was adjusted to 80 mm. I got the device.
  • thermoelectric conversion elements according to each example are different from those of Comparative Examples 1 to 3. Compared to the thermoelectric conversion element according to No. 3, the electromotive force in the steady state was high, and the thermoelectric conversion element had good thermoelectric conversion characteristics. In addition, the thermoelectric conversion elements according to each example had less noise and a higher S/N ratio than the thermoelectric conversion elements according to Comparative Examples 1-3. On the other hand, the thermoelectric conversion elements according to Comparative Examples 1 to 3 had a low electromotive force in a steady state, and it was difficult to say that they had good thermoelectric conversion characteristics. Further, the thermoelectric conversion elements according to Comparative Examples 1 to 3 had large noise and a small S/N ratio.
  • the value of the ratio D/D 0 of the magnetic material in the thermoelectric conversion element according to each example was 0.80 or more.
  • the ratio D/D 0 of the magnetic material in the thermoelectric conversion elements according to Comparative Examples 1 to 3 was less than 0.80. It was suggested that the ratio D/D 0 of 0.80 or more in the magnetic material is advantageous for improving the thermoelectric conversion characteristics of the thermoelectric conversion element.
  • the saturation magnetic susceptibility Ms, residual magnetic susceptibility Mr, and squareness ratio Mr/Ms of the magnetic material of the thermoelectric conversion element according to each example are similar to those of the magnetic material of the thermoelectric conversion element according to Comparative Example 1. was higher than the value of It was suggested that the magnetic properties of the thermoelectric conversion element tend to be improved when the ratio D/D 0 of the magnetic material is 0.80 or more.
  • a first aspect of the present invention is a substrate; and a magnetic body having ferromagnetism or antiferromagnetism disposed on the base material, The ratio of the measured density of the magnetic material to the theoretical density of the magnetic material is 0.80 or more.
  • a thermoelectric conversion element is provided.
  • thermoelectric conversion element according to the first aspect,
  • the substrate provides a thermoelectric conversion element having flexibility.
  • thermoelectric conversion element according to the second aspect,
  • the substrate provides a thermoelectric conversion element containing at least an organic polymer.
  • a fourth aspect of the present invention is the thermoelectric conversion element according to any one of the first to third aspects,
  • the substrate provides a thermoelectric conversion element having a glass transition temperature of 200° C. or lower.
  • thermoelectric conversion element according to any one of the first to fourth aspects, Provided is a thermoelectric conversion element in which the squareness ratio, which is the ratio of residual magnetic susceptibility to saturation magnetic susceptibility, in the MH curve of the magnetic material is 0.6 or more.
  • thermoelectric conversion element according to any one of the first to fifth aspects, A thermoelectric conversion element is provided, wherein the magnetic material has a residual magnetic susceptibility of 500 emu/cm 3 or more.
  • thermoelectric conversion element according to any one of the first to sixth aspects, The thermoelectric conversion element is provided, wherein the maximum value of the slope of the MH curve of the magnetic material is 1.5 emu/(cm 3 ⁇ Oe) or more.
  • thermoelectric conversion element is the thermoelectric conversion element according to any one of the first to seventh aspects,
  • the magnetic material provides a thermoelectric conversion element that is a sputtered film.
  • thermoelectric conversion element according to any one of the first to eighth aspects, Provided is a thermoelectric conversion element that generates an electromotive force in a direction orthogonal to the thickness direction of the substrate when a temperature gradient occurs in the thickness direction of the substrate.
  • thermoelectric conversion element is the thermoelectric conversion element according to any one of the first to ninth aspects,
  • the magnetic material provides a thermoelectric conversion element that generates an electromotive force due to the anomalous Nernst effect.
  • thermoelectric conversion element is the thermoelectric conversion element according to any one of the first to tenth aspects, A thermoelectric conversion element is provided, which includes the magnetic material and includes a conductive path forming a meander pattern.

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