WO2023005369A1 - 一种光探测器、制备方法以及光模块 - Google Patents

一种光探测器、制备方法以及光模块 Download PDF

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Publication number
WO2023005369A1
WO2023005369A1 PCT/CN2022/094120 CN2022094120W WO2023005369A1 WO 2023005369 A1 WO2023005369 A1 WO 2023005369A1 CN 2022094120 W CN2022094120 W CN 2022094120W WO 2023005369 A1 WO2023005369 A1 WO 2023005369A1
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Prior art keywords
region
type
doped
optical
waveguide
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Ceased
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PCT/CN2022/094120
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English (en)
French (fr)
Inventor
隋少帅
陈思涛
尹延龙
赵其圣
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Hisense Broadband Multimedia Technology Co Ltd
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Hisense Broadband Multimedia Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/428—Electrical aspects containing printed circuit boards [PCB]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the technical field of optical communication, and in particular to an optical detector, a preparation method and an optical module.
  • optical communication technology will be used in new business and application modes such as cloud computing, mobile Internet, and video.
  • the optical module is a tool to realize the mutual conversion of photoelectric signals, and it is one of the key components in optical communication equipment.
  • the use of silicon photonic chips to realize the photoelectric conversion function has become a mainstream solution adopted by high-speed optical modules.
  • an optical detector provided by the present application is used for an optical module, including a substrate; a buried layer disposed above the substrate; an optical coupler located in the buried layer for coupling external Signal light; a ridge waveguide, located in the buried layer, including a connecting part and a doped part, one end of the connecting part is connected to the optical coupler, and the high-speed signal light is coupled and transmitted to the optical coupler through the optical coupler.
  • connection portion the P-type doped region, located on one side of the doped portion, is doped with P-type ions; the P-type charge region, located on the other side of the doped portion, is doped with P-type ions, so The ion doping concentration of the P-type charge region is less than the ion doping concentration of the P-type doping region; the N-type doping region is located on the side of the P-type charge region away from the P-type doping region, using N-type ion doping has a gap with the P-type charge region, and the gap is used as an avalanche multiplication region; a P-type contact region is located in the P-type doped region, and the ion-doped region of the P-type contact region The impurity concentration is greater than the concentration of the P-type doped region; the N-type contact region is located in the N-type doped region, and the ion doping concentration of the N-type contact region is greater than the ion doping concentration
  • the method for preparing a photodetector is used to prepare the photodetector described in the first aspect, and the method includes: forming an optical coupler and a ridge waveguide on an SOI wafer, and the ridge waveguide It includes a connected connection part and a doped part, one end of the connection part is connected to the optical coupler; a P-type doped region and a P-type charge region are formed on the doped part, and the ions in the P-type charge region The doping concentration is lower than the ion doping concentration of the P-type doped region; an N-type doped region is formed on the doped part, and the N-type doped region is located in the P-type charge region away from the P-type One side of the doped region, the N-type doped region and the P-type charge region form an avalanche multiplication region; a P-type contact region is formed in the P-type doped region, and the ion doping of the P-
  • an optical module provided by the present application includes: a circuit board; a first optical fiber ribbon connected to an optical fiber connector for receiving and transmitting external signal light; a silicon optical chip electrically connected to the circuit board and the optical connection
  • the first optical fiber ribbon is integrated with a photodetector, and the photodetector receives the signal light transmitted through the first optical fiber ribbon; wherein: the photodetector is the photodetector described in the first aspect or the second A photodetector prepared by the preparation method described in the aspect.
  • Fig. 1 is a connection diagram of an optical communication system according to some embodiments
  • Fig. 2 is a structural diagram of an optical network terminal according to some embodiments.
  • Fig. 3 is a structural diagram of an optical module according to some embodiments.
  • Figure 4 is an exploded view of an optical module according to some embodiments.
  • FIG. 5 is a top view of a photodetector according to some embodiments.
  • Figure 6 is a cross-sectional view of a photodetector according to some embodiments.
  • FIG. 7 is a schematic structural view of an SOI wafer according to some embodiments.
  • FIG. 8 is a schematic structural view of a processed silicon layer on top of an SOI wafer according to some embodiments.
  • FIG. 9 is a schematic structural view of forming an N-type doped region on a doped portion of a ridge waveguide according to some embodiments.
  • FIG. 10 is a schematic structural diagram of forming a P-type doped region on a doped portion of a ridge waveguide according to some embodiments
  • Fig. 11 is a schematic structural view of forming a charge region on a doped portion of a ridge waveguide according to some embodiments.
  • Fig. 12 is a schematic structural diagram of forming an N-type contact region on a doped part of a ridge waveguide according to some embodiments
  • Fig. 13 is a schematic structural diagram of forming a P-type contact region on a doped portion of a ridge waveguide according to some embodiments
  • Fig. 14 is a schematic structural view of forming a germanium absorbing layer on the doped part of a ridge waveguide according to some embodiments
  • FIG. 15 is a schematic structural view of electrodes formed on a BOX layer according to some embodiments.
  • FIG. 16 is a state diagram of a photodetector in use according to some embodiments.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality” means two or more.
  • the expressions “coupled” and “connected” and their derivatives may be used.
  • the term “connected” may be used in describing some embodiments to indicate that two or more elements are in direct physical or electrical contact with each other.
  • the term “coupled” may be used when describing some embodiments to indicate that two or more elements are in direct physical or electrical contact.
  • the terms “coupled” or “communicatively coupled” may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other.
  • the embodiments disclosed herein are not necessarily limited by the context herein.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, A and B A combination of A and C, a combination of B and C, and a combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • optical communication technology In optical communication technology, light is used to carry information to be transmitted, and the optical signal carrying information is transmitted to information processing equipment such as a computer through optical fiber or optical waveguide and other information transmission equipment to complete the information transmission. Because optical signals have passive transmission characteristics when they are transmitted through optical fibers or optical waveguides, low-cost, low-loss information transmission can be achieved.
  • the signals transmitted by information transmission equipment such as optical fibers or optical waveguides are optical signals, while the signals that can be recognized and processed by information processing equipment such as computers are electrical signals. To establish an information connection between them, it is necessary to realize the mutual conversion of electrical signals and optical signals.
  • the optical module realizes the mutual conversion function of the above-mentioned optical signal and electrical signal in the technical field of optical fiber communication.
  • the optical module includes an optical port and an electrical port.
  • the optical module realizes optical communication with information transmission equipment such as optical fiber or optical waveguide through the optical port, and realizes the electrical connection with the optical network terminal (such as an optical modem) through the electrical port. It is mainly configured to realize power supply, I2C signal transmission, data signal transmission, and grounding; the optical network terminal transmits electrical signals to information processing equipment such as computers through network cables or wireless fidelity technology (Wi-Fi).
  • Wi-Fi wireless fidelity technology
  • Fig. 1 is a connection diagram of an optical communication system according to some embodiments.
  • the optical communication system mainly includes a remote server 1000 , a local information processing device 2000 , an optical network terminal 100 , an optical module 200 , an optical fiber 101 and a network cable 103 .
  • optical fiber 101 One end of the optical fiber 101 is connected to the remote server 1000 , and the other end is connected to the optical network terminal 100 through the optical module 200 .
  • Optical fiber itself can support long-distance signal transmission, such as signal transmission of several kilometers (6 kilometers to 8 kilometers). On this basis, if repeaters are used, ultra-long-distance transmission can theoretically be achieved. Therefore, in a common optical communication system, the distance between the remote server 1000 and the optical network terminal 100 can usually reach thousands of kilometers, tens of kilometers or hundreds of kilometers.
  • the local information processing device 2000 may be any one or more of the following devices: routers, switches, computers, mobile phones, tablet computers, televisions, and so on.
  • the physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100.
  • the connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103 ; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100 .
  • the optical module 200 includes an optical port and an electrical port.
  • the optical port is configured to be connected to the optical fiber 101, so that the optical module 200 establishes a bidirectional optical signal connection with the optical fiber 101; electrical signal connection.
  • the optical module 200 implements mutual conversion between optical signals and electrical signals, so that a connection is established between the optical fiber 101 and the optical network terminal 100 .
  • the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and then input to the optical network terminal 100
  • the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input to the optical fiber 101 .
  • the optical network terminal 100 includes a substantially rectangular parallelepiped housing (housing), and an optical module interface 102 and a network cable interface 104 disposed on the housing.
  • the optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 and the optical module 200 establish a bidirectional electrical signal connection;
  • the network cable interface 104 is configured to access the network cable 103, so that the optical network terminal 100 and the network cable 103 A two-way electrical signal connection is established.
  • a connection is established between the optical module 200 and the network cable 103 through the optical network terminal 100 .
  • the optical network terminal 100 transmits the electrical signal from the optical module 200 to the network cable 103, and transmits the signal from the network cable 103 to the optical module 200. Therefore, the optical network terminal 100, as the host computer of the optical module 200, can monitor the optical module 200 work.
  • the host computer of the optical module 200 may also include an optical line terminal (Optical Line Terminal, OLT) and the like.
  • OLT optical Line Terminal
  • the remote server 1000 establishes a two-way signal transmission channel with the local information processing device 2000 through the optical fiber 101 , the optical module 200 , the optical network terminal 100 and the network cable 103 .
  • FIG. 2 is a structural diagram of an optical network terminal according to some embodiments.
  • the optical network terminal 100 further includes a PCB circuit board 105 disposed in the casing, a cage 106 disposed on the surface of the PCB circuit board 105 , and an electrical connector disposed inside the cage 106 .
  • the electrical connector is configured to be connected to the electrical port of the optical module 200 ; the heat sink 107 has raised parts such as fins that increase the heat dissipation area.
  • the optical module 200 is inserted into the cage 106 of the optical network terminal 100 , and the optical module 200 is fixed by the cage 106 .
  • the heat generated by the optical module 200 is conducted to the cage 106 and then diffused through the radiator 107 .
  • the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106 , so that the optical module 200 establishes a bidirectional electrical signal connection with the optical network terminal 100 .
  • the optical port of the optical module 200 is connected to the optical fiber 101 , so that the optical module 200 and the optical fiber 101 establish a bidirectional electrical signal connection.
  • Fig. 3 is a structural diagram of an optical module according to some embodiments
  • Fig. 4 is an exploded view of an optical module according to some embodiments.
  • the optical module 200 provided by the embodiment of the present invention includes an upper housing 201 , a lower housing 202 , an unlocking component 203 , a circuit board 300 , a silicon photonics chip 400 , a laser box 500 and an optical fiber socket 600 .
  • the casing includes an upper casing 201 and a lower casing 202.
  • the upper casing 201 is covered on the lower casing 202 to form the above casing with two openings 204 and 205; the outer contour of the casing is generally square.
  • the lower case 202 includes a bottom plate and two lower side plates located on both sides of the bottom plate and perpendicular to the bottom plate;
  • the two upper side plates are combined by two side walls and two side plates to realize that the upper case 201 is covered on the lower case 202 .
  • the direction of the line connecting the two openings 204 and 205 may be consistent with the length direction of the optical module 200 , or may not be consistent with the length direction of the optical module 200 .
  • the opening 204 is located at the end of the optical module 200 (the left end in FIG. 3 ), and the opening 205 is also located at the end of the optical module 200 (the right end in FIG. 3 ).
  • the opening 204 is located at the end of the optical module 200
  • the opening 205 is located at the side of the optical module 200 .
  • the opening 204 is an electric port, and the golden finger of the circuit board 300 is stretched out from the electric port 204, and is inserted into a host computer (such as the optical network terminal 100); the opening 205 is an optical port, configured to be connected to an external optical fiber 101, so that The optical fiber 101 is connected to the inside of the optical module 200 .
  • the combination of the upper case 201 and the lower case 202 is used to facilitate the installation of components such as the circuit board 300 into the case, and the upper case 201 and the lower case 202 can form packaging protection for these devices.
  • the upper case 201 and the lower case 202 can form packaging protection for these devices.
  • the upper shell 201 and the lower shell 202 are generally made of metal materials, which is beneficial to realize electromagnetic shielding and heat dissipation.
  • the optical module 200 further includes an unlocking part 203 located on the outer wall of its housing, and the unlocking part 203 is configured to realize a fixed connection between the optical module 200 and the host computer, or release the connection between the optical module 200 and the host computer. fixed connection.
  • the unlocking component 203 is located on the outer walls of the two lower side panels of the lower housing 202 , and includes an engaging component matching with a cage of the upper computer (for example, the cage 106 of the optical network terminal 100 ).
  • a cage of the upper computer for example, the cage 106 of the optical network terminal 100 .
  • the optical module 200 is inserted into the cage of the host computer, the optical module 200 is fixed in the cage of the host computer by the engaging part of the unlocking part 203; when the unlocking part 203 is pulled, the engaging part of the unlocking part 203 moves accordingly, thereby changing
  • the connection relationship between the engaging part and the host computer is to release the engagement relationship between the optical module 200 and the host computer, so that the optical module 200 can be pulled out from the cage of the host computer.
  • the circuit board 300 includes circuit traces, electronic components and chips, through which the electronic components and chips are connected together according to the circuit design, so as to realize functions such as power supply, electrical signal transmission and grounding.
  • the electronic components may include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).
  • Chips can include, for example, a Microcontroller Unit (MCU), a limiting amplifier (limiting amplifier), a clock data recovery chip (Clock and Data Recovery, CDR), a power management chip, and a digital signal processing (Digital Signal Processing, DSP) chip.
  • MCU Microcontroller Unit
  • limiting amplifier limiting amplifier
  • CDR clock data recovery chip
  • DSP digital signal processing
  • the circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also realize the bearing function, such as the rigid circuit board can carry the chip stably; the rigid circuit board can also be inserted into the electrical connector in the cage of the upper computer .
  • the circuit board 300 also includes gold fingers formed on the surface of its end, and the gold fingers are composed of a plurality of independent pins.
  • the circuit board 300 is inserted into the cage 106 and electrically connected with the electrical connector in the cage 106 by the gold finger.
  • Gold fingers can be arranged only on one side of the circuit board 300 (for example, the upper surface shown in FIG. 4 ), or on the upper and lower sides of the circuit board 300, so as to meet the occasions where the number of pins is large.
  • the golden finger is configured to establish an electrical connection with the host computer to realize power supply, grounding, I2C signal transmission, data signal transmission, etc.
  • flexible circuit boards are also used in some optical modules. Flexible circuit boards are generally used in conjunction with rigid circuit boards as a supplement to rigid circuit boards.
  • the silicon photonics chip 400 is electrically connected to the circuit board 300, specifically, it may be connected by wire bonding, such as by semiconductor bonding gold wire (Gold Wire Bonding).
  • wire bonding such as by semiconductor bonding gold wire (Gold Wire Bonding).
  • the periphery of the silicon photonics chip 400 is connected to the circuit board 300 through a plurality of conductive wires, so the silicon photonics chip 400 is generally disposed on the surface of the circuit board 300 .
  • the silicon photonic chip 400 receives the light from the laser box 500 through the second optical fiber ribbon 401, and then modulates the light, specifically loading the signal onto the light; the silicon photonic chip 400 receives the light from the optical fiber socket 600, and then converts the light signal to for electrical signals.
  • the optical connection between the silicon photonics chip 400 and the optical fiber socket 600 is realized through the first optical fiber ribbon 601, and the optical fiber socket 600 realizes the optical connection with the external optical fiber of the optical module.
  • the optical fiber socket 600 includes an optical fiber connector.
  • the light modulated by the silicon photonics chip 400 is transmitted to the optical fiber connector of the optical fiber socket 600 through the first optical fiber ribbon 601 , and transmitted to the external optical fiber connected to the optical fiber socket 600 through the optical fiber connector.
  • a photodetector is integrated in the silicon photonics chip 400, and the light transmitted from the external optical fiber is transmitted to the first fiber optic ribbon 601 through the fiber optic socket 600, and then transmitted to the silicon photonics chip 400 through the first fiber optic ribbon 601 and coupled to the photodetector.
  • the detector receives the signal light and converts it into an electrical signal.
  • the optical module provided in the embodiment of the present application uses the silicon photonics chip 400 to output light carrying data to an external optical fiber of the optical module and receive light carrying data from an external optical fiber of the optical module.
  • optical module with the structures shown in Figure 3 and Figure 4 is only an example in this application, and the transmission or reception of optical signals in the optical module provided in this application can also adopt other structural forms of silicon optical chips and combinations.
  • FIG. 5 is a top view of a photodetector according to some embodiments, wherein part of the BOX layer is removed so that the internal structure of the photodetector can be seen;
  • Fig. 6 is a cross-sectional view of a photodetector according to some embodiments; FIG. 5 and FIG. 6 show the basic structure of the photodetector provided by the embodiment of the present application.
  • the photodetector 700 provided by the embodiment of the present application includes a substrate 710 and a buried layer 720 disposed above the substrate 710 .
  • the substrate 710 may be made of silicon material
  • the buried layer 720 may be made of silicon dioxide material
  • the buried layer 720 is formed by depositing a thin film of silicon dioxide material.
  • the buried layer 720 of the optical detector 700 provided by the embodiment of the present application also includes an optical coupler 730 and a ridge waveguide 740, the bottom and top of the optical coupler 730 are in contact with the buried layer 720, and the ridge waveguide The bottom and part of the top of the ridge waveguide 740 are connected to the buried layer 720 , and one end of the ridge waveguide 740 is connected to the optical coupler 730 .
  • the optical coupler 730 is used to couple the signal light in the external or external optical fiber to the optical detector 700
  • the ridge waveguide 740 is used to transmit the signal light coupled into the optical detector 700 through the optical coupler 730 .
  • the ridge waveguide 740 includes a connection part 741 and a doped part 742 .
  • One end of the connection part 741 is connected to the optical coupler 730 , and the other end is connected to the doping part 742 .
  • the connection part 741 is used to transmit the signal light coupled into the photodetector 700 through the optical coupler 730 to the doping part 742 .
  • the doping portion 742 is used for laterally doping and arranging N-type doping regions, charge regions, P-type doping regions and the like.
  • the optical coupler 730 is a grating coupler or an end face coupler.
  • the photodetector 700 provided by the embodiment of the present application also includes a P-type charge region 750, an N-type doped region 760, a P-type doped region 770, an N-type contact region 761, and a P-type contact region.
  • the P-type charge region 750, the N-type doped region 760, the P-type doped region 770, the N-type contact region 761, the P-type contact region 771 and the germanium absorption layer 780 are located in the buried layer 720, and The P-type charge region 750, the N-type doped region 760, the P-type doped region 770, the N-type contact region 761, and the P-type contact region 771 are doped in the doped part 742, and the germanium absorption layer 780 is arranged in the ridge waveguide 740. on the top surface.
  • the P-type charge region 750 is disposed on one side of the doped portion 742, the P-type doped region is disposed on the other side of the doped portion 742, and the N-type doped region 760 is disposed on the P-type charge region 750 away from the P-type doped region.
  • On one side there is a gap between the P-type charge region 750 and the N-type doped region 760, which is an undoped silicon region, used as an avalanche multiplication region 751, and the N-type doped region 760 is doped to form an N-type In the contact region 761 , the P-type doped region 770 is doped to form a P-type contact region 771 .
  • the P-type charge region 750 is formed by P-type ion doping
  • the P-type doped region 770 is formed by P-type ion doping.
  • the P-type charge region 750 may be in contact with the P-type doped region 770 , or the P-type charge region 750 may have a certain distance from the P-type doped region 770 .
  • the P-type charge region 750 and the P-type doped region 770 may be symmetrical about the central axis of the doped portion 742 .
  • the ion doping concentration of the P-type charge region 750 is smaller than the ion doping concentration of the P-type doping region 770 .
  • the N-type doped region 760 is set on the side of the P-type charge region 750 away from the P-type doped region 770 by N-type ion doping, and there is a gap between the N-type doped region 760 and the P-type charge region 750, which is The undoped silicon region is used to form the avalanche multiplication region 751 .
  • the side of the doped portion 742 away from the P-type doped region 770 is first doped with P-type ions to form the P-type charge region 750, and then doped with N-type ions at a certain distance to form an N-type doped region. 760.
  • the P-type charge region 750 and the N-type doped region 760 form a PN junction.
  • N-type ion doping in the N-type doped region 760 forms an N-type contact region 761, and the N-type contact region 761 is used for electrically connecting corresponding electrodes.
  • the N-type ion doping concentration of the N-type contact region 761 is greater than the N-type ion doping concentration of the N-type doped region 760, so as to form a good N-type contact region 761, which is convenient for forming with corresponding electrodes.
  • Good N-type electrical contact ensures the circuit connection between the N-type doped region 760 and the corresponding electrode.
  • P-type ion doping in the P-type doped region 770 forms a P-type contact region 771, and the P-type contact region 771 is used for electrically connecting corresponding electrodes.
  • the P-type ion doping concentration of the P-type contact region 771 is greater than the N-type ion doping concentration of the P-type doped region 770, so as to form a good P-type contact region 771, which is convenient for forming with corresponding electrodes.
  • a good P-type electrical contact ensures the circuit connection between the P-type doped region 770 and the corresponding electrode.
  • the germanium absorbing layer 780 is located on the top surface of the doped portion 742 , and the bottom surface of the germanium absorbing layer 780 contacts and connects to the doped portion 742 for the light absorbing region of the photodetector 700 .
  • the cross section of the germanium absorbing layer 780 is triangular or trapezoidal, and the width of the germanium absorbing layer 780 gradually decreases from the position in contact with the doped portion 742 to the direction away from the doped portion 742 .
  • a Ge thin film is grown on the top surface of the doped part 742 to form a germanium absorption layer 780, and the germanium absorption layer 780 contacts and connects the P-type charge region 750 and the P-type doped region 770, and the shape of the Ge thin film is according to
  • the crystal growth angle is required to be triangular or trapezoidal, and the width of the germanium absorbing layer 780 is reduced, so that the P-type charge region 750 formed by P-type ion doping and the P-type doped region 770 formed by P-type ion doping can , a strong electric field intensity is formed inside the germanium absorbing layer 780, thereby increasing the moving rate of photogenerated carriers and increasing the 3dB modulation bandwidth of the device.
  • the photodetector 700 provided by the embodiment of the present application further includes a first electrode 762 and a second electrode 772 , and the first electrode 762 and the second electrode 772 penetrate through the buried layer 720 .
  • one end of the first electrode 762 is electrically connected to the N-type contact region 761, and the other end is disposed on the surface of the buried layer 720;
  • one end of the second electrode 772 is electrically connected to the P-type contact region 771, and the other end is disposed on the surface of the buried layer 720.
  • the first electrode 762 and the second electrode 772 are used to facilitate the electrical connection of the photodetector 700 to a TIA (transimpedance amplifier), usually the photodetector 700 is electrically connected to the TIA by gold wire bonding.
  • the first electrode 762 and the second electrode 772 can be a multi-layer structure or a single-layer structure. In FIG. The thickness and the actual need to choose.
  • the first electrode 762 and the second electrode 772 are respectively formed by depositing metal on the N-type contact region 761 and the P-type contact region 771 correspondingly.
  • the external signal light is coupled into the ridge waveguide 740 through the optical coupler 730, transmitted to the doped part 742 of the ridge waveguide through the connection part 741 of the ridge waveguide 740, and then the In the P-type charge region 750, N-type doped region 760, avalanche multiplication region 751, P-type doped region 770, N-type contact region 761, and P-type contact region 771 of the doped portion 742, as well as the top of the doped portion 742
  • the germanium absorbing layer 780 on the surface makes the N-type doped region 760 and the avalanche multiplication region 751 distributed on the same side region of the ridge waveguide 740, and the germanium absorbing layer 780 is located above the doped part 742 region of the ridge waveguide 740, so that the optical field can be realized
  • the separation of the absorption and carrier avalanche multiplication regions serves to increase the bandwidth and responsivity
  • the doped portion 742 of the ridge waveguide 740 includes a first thin waveguide region 7421 , a second thin waveguide region 7422 and a thick waveguide region 7423 , and the first thin waveguide region 7421 is located on one side of the thick waveguide region 7423 , the second thin waveguide region 7422 is located on the other side of the thick waveguide region 7423, the thicknesses of the first thin waveguide region 7421 and the second thin waveguide region 7422 are smaller than the thickness of the thick waveguide region 7423, so the first thin waveguide region 7421, the second The thin waveguide region 7422 and the thick waveguide region 7423 form a "convex" like structure comprising thick waveguides and thin waveguides.
  • the N-type doped region 760 is located in the first thin waveguide region 7421
  • the P-type contact region 771 is located in the second thin waveguide region 7422
  • the germanium absorption layer 780 is located on the top surface of the thick waveguide region 7423 .
  • the thickness of the first thin waveguide region 7421 is 90nm
  • the thickness of the second thin waveguide region 7422 is 90nm
  • the thickness of the thick waveguide region 7423 is 220nm.
  • the P-type charge region 750 extends from the thick waveguide region 7423 to the first thin waveguide region 7421, that is, a part of the P-type charge region 750 is located in the thick waveguide region 7423, and the other part is located in the first thin waveguide region 7421 , and then the avalanche multiplication region 751 is located in the first thin waveguide region 7421 .
  • one end of the P-type charge region 750 is close to the central axis of the thick waveguide region 7423 .
  • the P-type doped region 770 extends from the thick waveguide region 7423 to the second thin waveguide region 7422, that is, a part of the P-type doped region 770 is located in the thick waveguide region 7423, and the other part is located in the second thin waveguide region. District 7422. In some embodiments of the present disclosure, one end of the P-type doped region 770 is close to the central axis of the thick waveguide region 7423 .
  • the ridge waveguide 740 further includes a gradient portion 743, one end of the gradient portion 743 is connected to the connection portion 741, and the other end is connected to the doping portion 742, for A gradual change from the connecting portion 741 to the doped portion 742 on the ridge waveguide 740 is achieved, such as a gradual change in the width direction.
  • the gradient part includes a first graded waveguide region 7431, a second graded waveguide region 7432 and a third graded waveguide region 7433; one end of the first graded waveguide region 7431 is connected to the connection part 741, and the other end is connected to the first
  • the thin waveguide region 7421 is used to realize the gradual change from the connecting part 741 to the first thin waveguide region 7421, such as the gradual change in the width direction, that is, the first graded waveguide region 7431 is used to realize the width from the connecting part 741 to the first thin waveguide region 7421 Extended gradient; one end of the second graded waveguide region 7432 is connected to the connection part 741, and the other end is connected to the second thin waveguide region 7422, for realizing the gradient from the connection part 741 to the second thin waveguide region 7422, such as the gradient in the width direction, that is The second tapered waveguide region 7432 is used to realize the width extension gradient from the connecting portion 7
  • the photodetector 700 provided in the embodiment of the present application is not only integrated from the silicon photonics chip 400 in the above embodiment, but also can be a separate photodetector, that is, the structure of the photodetector 700 not related to the light emitting part is integrated in one in silicon photonics chips.
  • the present application further provides a method for preparing the photodetectors, which is used to prepare the photodetectors provided in the embodiments of the present application.
  • the preparation method of the photodetector provided in the embodiment of the present application includes:
  • the ridge waveguide including a connected connection part and a doping part, one end of the connection part is connected to the optical coupler;
  • a P-type doped region and a P-type charge region are formed on the doped portion, and the ion doping concentration of the P-type charge region is lower than the ion doping concentration of the P-type doped region;
  • An N-type doped region is formed on the doped portion, the N-type doped region is located on a side of the P-type charge region away from the P-type doped region, and the N-type doped region is connected to the P-type doped region.
  • the P-type charge region forms an avalanche multiplication region;
  • a P-type contact region is formed in the P-type doped region, and the ion doping concentration of the P-type contact region is greater than the concentration of the P-type doped region;
  • An N-type contact region is formed in the N-type doped region, and the ion doping concentration of the N-type contact region is greater than the ion doping concentration of the N-type doped region;
  • a second electrode is formed above the P-type contact region, and the second electrode is electrically connected to the P-type contact region.
  • FIG. 7 is a schematic structural diagram of an SOI wafer according to some embodiments.
  • the SOI wafer includes a substrate 710 , a middle BOX layer 721 disposed above the substrate 710 , and a silicon layer 740 - 1 disposed above the middle BOX layer 721 .
  • the optical coupler 730 and the ridge waveguide 740 are formed by performing a CMOS process on the silicon layer on the top of the SOI wafer, and the optical coupler 730 is connected to the ridge waveguide 740 .
  • FIG. 8 is a schematic diagram of a processed silicon layer on top of an SOI wafer according to some embodiments.
  • the doped portion 742 of the ridge waveguide 740 includes a first thin waveguide region 7421 , a second thin waveguide region 7422 and a thick waveguide region 7423 , the first thin waveguide region 7421 is located on one side of the thick waveguide region 7423 , and the second The second thin waveguide region 7422 is located on the other side of the thick waveguide region 7423 , and the thicknesses of the first thin waveguide region 7421 and the second thin waveguide region 7422 are smaller than the thickness of the thick waveguide region 7423 .
  • FIG. 9 is a schematic structural diagram of forming an N-type doped region on a doped portion of a ridge waveguide according to some embodiments.
  • the P-type charge region 750 is formed by P-type ion doping on the left side of the doped portion 742 .
  • a window is opened on the left side of the doped portion 742 , and P-type ions are implanted into the window to form a P-type charge region 750 .
  • the P-type charge region 750 extends from the thick waveguide region 7423 to the first thin waveguide region 7421 .
  • FIG. 10 is a schematic structural diagram of forming a P-type doped region on a doped portion of a ridge waveguide according to some embodiments.
  • the P-type doped region 770 is formed by P-type ion doping on the right side of the doped portion 742 .
  • a window is opened on the right side of the doped portion 742 , and P-type ions are implanted into the window to form a P-type doped region 770 .
  • the P-type doped region 770 extends from the thick waveguide region 7423 to the second thin waveguide region 7422 .
  • the doping ion concentration of the P-type doped region 770 is greater than the ion doping concentration of the P-type charge region 750 .
  • FIG. 11 is a schematic diagram of the structure of a charge region formed on a doped portion of a ridge waveguide according to some embodiments.
  • an N-type doped region 760 is formed on the left side doped portion 742 of the P-type charge region 750 by N-type ion doping, and the N-type doped region 760 is located in the P-type charge region 750 away from the P-type
  • On one side of the doped region 770 there is a gap between the N-type doped region 760 and the P-type charge region 750 , and the gap is an undoped silicon region for forming the avalanche multiplication region 751 .
  • a window is opened on the left doped portion 742 of the P-type charge region 750 , and N-type ions are implanted in the window to form the N-type doped region 760 .
  • FIG. 12 is a schematic structural view of forming an N-type contact region on a doped portion of a ridge waveguide according to some embodiments.
  • an N-type contact region 761 is formed on the N-type doped region 760 by N-type ion doping.
  • the N-type ion doping concentration of the N-type contact region 761 is greater than the N-type ion doping concentration of the N-type doping region 760 .
  • a window is opened on the N-type doped region 760 at a position slightly away from the P-type charge region 750, and N-type ions with an ion doping concentration greater than that of the N-type doped region 760 are implanted in the window, so as to An N-type contact region 761 is formed.
  • FIG. 13 is a schematic structural diagram of forming a P-type contact region on a doped portion of a ridge waveguide according to some embodiments.
  • a P-type contact region 771 is formed on the P-type doped region 770 by doping P-type ions.
  • the P-type ion doping concentration of the P-type contact region 771 is greater than the P-type ion doping concentration of the P-type doping region 770 .
  • a window is opened on the P-type doped region 770 away from the P-type charge region 750, and P-type ions with an ion doping concentration greater than that of the P-type doped region 770 are implanted into the window to form P-type contact region 771 .
  • Fig. 14 is a schematic structural diagram of forming a germanium absorbing layer on the doped part of a ridge waveguide according to some embodiments.
  • a Ge thin film is selectively grown on the thick waveguide region 7423 of the doped part 742 to form a germanium absorption layer 780, and the germanium absorption layer 780 is located above the P-type charge region 750 and the P-type doped region 770, and the germanium
  • the absorption layer 780 can form an electric field distribution inside the germanium absorption layer 780 under the action of the P-type charge region 750 and the P-type doped region 770 .
  • FIG. 15 is a schematic structural diagram of electrodes formed on a BOX layer according to some embodiments. As shown in FIG. 15, windows are respectively opened above the N-type contact region 761 and the P-type contact region 771, and contact electrodes are deposited in the windows above the N-type contact region 761 and the P-type contact region 771 to form the first electrode 762 and the second electrode. Electrode 772. In FIG. 15, the first electrode 762 and the second electrode 772 have a single-layer structure.
  • FIG. 16 is a state diagram of a photodetector in use according to some embodiments.
  • the optical fiber is connected to the optical detector 700, and the high-speed optical signal transmitted in the optical fiber is coupled into the optical detector 700 through the optical coupler 730, and then the high-speed optical signal is coupled into the optical detector to complete the avalanche detection of the high-speed optical signal;
  • the photodetector 700 and the TIA electronic chip are connected by gold wire bonding.
  • the high-speed current signal output by the photodetector 700 flows into the TIA electronic chip through the bonding gold wire, and the transimpedance amplification of the TIA electronic chip completes the high-speed transmission. Voltage signal, so as to complete the detection of high-speed optical signal.
  • the photodetector 700 is integrated and packaged in the silicon photonic chip 400.
  • the silicon photonic chip 400 can have a single-channel or multi-channel structure, and can also be integrated with a single-channel or multi-channel silicon optical modulator to form an integrated transceiver. optical integrated chip.

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Abstract

公开一种光探测器、制备方法以及光模块，光探测器包括：衬底以及设置在衬底上方的掩埋层；位于掩埋层内的光耦合器和脊波导，脊波导包括连接的连接部和掺杂部，连接部的一端连接光耦合器，高速信号光通过光耦合器耦合传输至连接部；横向排列设置在掺杂部的N型掺杂区、P型电荷区、雪崩倍增区、P型掺杂区、N型接触区和P型接触区以及设置在掺杂部顶面上的锗吸收层；一端电连接N型接触区、另一端设置在掩埋层表面的第一电极，一端电连接P型接触区、另一端设置在掩埋层表面的第二电极。

Description

一种光探测器、制备方法以及光模块
本申请要求于2021年7月28日提交到国家知识产权局、申请号为202110867836.1、发明名称为“一种光探测器、制备方法以及光模块”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及光通信技术领域，尤其涉及一种光探测器、制备方法以及光模块。
背景技术
在云计算、移动互联网、视频等新型业务和应用模式，均会用到光通信技术。而在光通信中，光模块是实现光电信号相互转换的工具，是光通信设备中的关键器件之一。其中，采用硅光芯片实现光电转换功能已经成为高速光模块采用的一种主流方案。
发明内容
第一方面，本申请提供的一种光探测器，用于光模块，包括衬底；掩埋层，设置在所述衬底的上方；光耦合器，位于所述掩埋层内，用于耦合外部信号光；脊波导，位于所述掩埋层内，包括连接的连接部和掺杂部，所述连接部的一端连接所述光耦合器，高速信号光通过所述光耦合器耦合传输至所述连接部；P型掺杂区，位于所述掺杂部的一侧，采用P型离子掺杂；P型电荷区，位于所述掺杂部的另一侧，采用P型离子掺杂，所述P型电荷区的离子掺杂浓度小于所述P型掺杂区的离子掺杂浓度；N型掺杂区，位于所述P型电荷区远离所述P型掺杂区的一侧，采用N型离子掺杂，与所述P型电荷区之间具有间隔，所述间隔用作雪崩倍增区；P型接触区，位于所述P型掺杂区，所述P型接触区的离子掺杂浓度大于所述P型掺杂区的浓度；N型接触区，位于所述N型掺杂区，所述N型接触区的离子掺杂浓度大于所述N型掺杂区的离子掺杂浓度；第一电极，一端电连接所述N型接触区，另一端设置在所述掩埋层的表面；第二电极，一端电连接所述P型接触区，另一端设置在所述掩埋层的表面；锗吸收层，位于所述掺杂部的顶面上。
第二方面，本申请提供的光探测器的制备方法，用于制备第一方面所述的光探测器，所述方法包括：在SOI晶圆上形成光耦合器和脊波导，所述脊波导包括连接的连接部和掺杂部，所述连接部的一端连接所述光耦合器；在所述掺杂部上形成P型掺杂区和P型电荷区，所述P型电荷区的离子掺杂浓度小于所述P型掺杂区的离子掺杂浓度；在所述掺杂部上形成N型掺杂区，所述N型掺杂区位于所述P型电荷区远离所述P型掺杂区的一侧，所述N型掺杂区与所述P型电荷区形成雪崩倍增区；在所述P型掺杂区形成P型接触区，所述P型接触区的离子掺杂浓度大于所述P型掺杂区的浓度；在所述N型掺杂区形成N型接触区，所述N型接触区的离子掺杂浓度大于所述N型掺杂区的离子掺杂浓度；在所述掺杂部的顶面上形成锗吸收层；在所述N型接触区上方形成第一电极，所述第一电极电连接所述N型接触区；在所述P型接触区上方形成第二电极，所述第二电极电连接所述P型接触区。
第三方面，本申请提供的一种光模块，包括：电路板；第一光纤带，连接光纤接头，用于接收并传输外部信号光；硅光芯片，电连接所述电路板以及光连接所述第一光纤带，集成有光探测器，所述光探测器接收通过所述第一光纤带传输的信号光；其中：所述光探测器为第一方面所述的光探测器或第二方面所述的制备方法制备的光探测器。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为根据一些实施例的一种光通信系统的连接关系图；
图2为根据一些实施例的一种光网络终端的结构图；
图3为根据一些实施例的一种光模块的结构图；
图4为根据一些实施例的一种光模块的分解图；
图5为根据一些实施例的一种光探测器的俯视图；
图6为根据一些实施例的一种光探测器的剖视图；
图7为根据一些实施例的一种SOI晶圆的结构示意图；
图8为根据一些实施例的一种SOI晶圆顶部硅层被加工后的结构示意图；
图9为根据一些实施例的一种脊波导的掺杂部上形成N型掺杂区的结构示意图；
图10为根据一些实施例的一种脊波导的掺杂部上形成P型掺杂区的结构示意图；
图11为根据一些实施例的一种脊波导的掺杂部上形成电荷区的结构示意图；
图12为根据一些实施例的一种脊波导的掺杂部上形成N型接触区的结构示意图；
图13为根据一些实施例的一种脊波导的掺杂部上形成P型接触区的结构示意图；
图14为根据一些实施例的一种脊波导的掺杂部上形成锗吸收层的结构示意图；
图15为根据一些实施例的一种BOX层上形成电极的结构示意图；
图16为根据一些实施例的一种光探测器的使用状态图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或 者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“耦接”和“连接”及其衍伸的表达。例如，描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如，描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而，术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触，但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文中“被配置为”的使用意味着开放和包容性的语言，其不排除被配置为执行额外任务或步骤的设备。
如本文所使用的那样，“约”、“大致”或“近似”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
光通信技术中，使用光携带待传输的信息，并使携带有信息的光信号通过光纤或光波导等信息传输设备传输至计算机等信息处理设备，以完成信息的传输。由于光信号通过光纤或光波导中传输时具有无源传输特性，因此可以实现低成本、低损耗的信息传输。此外，光纤或光波导等信息传输设备传输的信号是光信号，而计算机等信息处理设备能够识别和处理的信号是电信号，因此为了在光纤或光波导等信息传输设备与计算机等信息处理设备之间建立信息连接，需要实现电信号与光信号的相互转换。
光模块在光纤通信技术领域中实现上述光信号与电信号的相互转换功能。光模块包括光口和电口，光模块通过光口实现与光纤或光波导等信息传输设备的光通信，通过电口实现与光网络终端(例如，光猫)之间的电连接，电连接主要被配置为实现供电、I2C信号传输、数据信号传输以及接地等；光网络终端通过网线或无线保真技术(Wi-Fi)将电信号传输给计算机等信息处理设备。
图1为根据一些实施例的一种光通信系统的连接关系图。如图1所示，光通信系统主要包括远端服务器1000、本地信息处理设备2000、光网络终端100、光模块200、光纤101及网线103。
光纤101的一端连接远端服务器1000，另一端通过光模块200与光网络终端100连接。光纤本身可支持远距离信号传输，例如数千米(6千米至8千米)的信号传输，在此基础上如果使用中继器，则理论上可以实现超长距离传输。因此在通常的光通信系统中，远端服务器1000与光网络终端100之间的距离通常可达到数千米、数十千米或数百千米。
网线103的一端连接本地信息处理设备2000，另一端连接光网络终端100。本地信息处理设备2000可以为以下设备中的任一种或几种：路由器、交换机、计算机、手机、平板电脑、电视机等。
远端服务器1000与光网络终端100之间的物理距离大于本地信息处理设备2000与光网 络终端100之间的物理距离。本地信息处理设备2000与远端服务器1000的连接由光纤101与网线103完成；而光纤101与网线103之间的连接由光模块200和光网络终端100完成。
光模块200包括光口和电口。光口被配置为与光纤101连接，从而使得光模块200与光纤101建立双向的光信号连接；电口被配置为接入光网络终端100中，从而使得光模块200与光网络终端100建立双向的电信号连接。光模块200实现光信号与电信号的相互转换，从而使得光纤101与光网络终端100之间建立连接。示例的，来自光纤101的光信号由光模块200转换为电信号后输入至光网络终端100中，来自光网络终端100的电信号由光模块200转换为光信号输入至光纤101中。
光网络终端100包括大致呈长方体的壳体(housing)，以及设置在壳体上的光模块接口102和网线接口104。光模块接口102被配置为接入光模块200，从而使得光网络终端100与光模块200建立双向的电信号连接；网线接口104被配置为接入网线103，从而使得光网络终端100与网线103建立双向的电信号连接。光模块200与网线103之间通过光网络终端100建立连接。示例的，光网络终端100将来自光模块200的电信号传递给网线103，将来自网线103的信号传递给光模块200，因此光网络终端100作为光模块200的上位机，可以监控光模块200的工作。光模块200的上位机除光网络终端100之外还可以包括光线路终端(Optical Line Terminal，OLT)等。
远端服务器1000通过光纤101、光模块200、光网络终端100及网线103，与本地信息处理设备2000之间建立了双向的信号传递通道。
图2为根据一些实施例的一种光网络终端的结构图，为了清楚地显示光模块200与光网络终端100的连接关系，图2仅示出了光网络终端100的与光模块200相关的结构。如图2所示，光网络终端100中还包括设置于壳体内的PCB电路板105，设置在PCB电路板105的表面的笼子106，以及设置在笼子106内部的电连接器。电连接器被配置为接入光模块200的电口；散热器107具有增大散热面积的翅片等凸起部。
光模块200插入光网络终端100的笼子106中，由笼子106固定光模块200，光模块200产生的热量传导给笼子106，然后通过散热器107进行扩散。光模块200插入笼子106中后，光模块200的电口与笼子106内部的电连接器连接，从而光模块200与光网络终端100建立双向的电信号连接。此外，光模块200的光口与光纤101连接，从而光模块200与光纤101建立双向的电信号连接。
图3为根据一些实施例的一种光模块的结构图，图4为根据一些实施例的一种光模块的分解图。如图3和图4所示，本发明实施例提供的光模块200包括上壳体201、下壳体202、解锁部件203、电路板300、硅光芯片400、激光盒500和光纤插座600。
壳体包括上壳体201和下壳体202，上壳体201盖合在下壳体202上，以形成具有两个开口204和205的上述壳体；壳体的外轮廓一般呈现方形体。
在本公开一些实施例中，下壳体202包括底板以及位于底板两侧、与底板垂直设置的两个下侧板；上壳体201包括盖板，以及位于盖板两侧与盖板垂直设置的两个上侧板，由两个侧壁与两个侧板结合，以实现上壳体201盖合在下壳体202上。
两个开口204和205的连线所在方向可以与光模块200的长度方向一致，也可以与光模块200的长度方向不一致。示例地，开口204位于光模块200的端部(图3的左端)，开口205也位于光模块200的端部(图3的右端)。或者，开口204位于光模块200的端部，而开口205则位于光模块200的侧部。其中，开口204为电口，电路板300的金手指从电口204 伸出，插入上位机(如光网络终端100)中；开口205为光口，配置为接入外部的光纤101，以使光纤101连接光模块200的内部。
采用上壳体201、下壳体202结合的装配方式，便于将电路板300等器件安装到壳体中，由上壳体201、下壳体202可以对这些器件形成封装保护。此外，在装配电路板300等器件时，便于这些器件的定位部件、散热部件以及电磁屏蔽部件的部署，有利于自动化的实施生产。
在一些实施例中，上壳体201及下壳体202一般采用金属材料制成，利于实现电磁屏蔽以及散热。
在一些实施例中，光模块200还包括位于其壳体外壁的解锁部件203，解锁部件203被配置为实现光模块200与上位机之间的固定连接，或解除光模块200与上位机之间的固定连接。
示例地，解锁部件203位于下壳体202的两个下侧板的外壁，包括与上位机的笼子(例如，光网络终端100的笼子106)匹配的卡合部件。当光模块200插入上位机的笼子里，由解锁部件203的卡合部件将光模块200固定在上位机的笼子里；拉动解锁部件203时，解锁部件203的卡合部件随之移动，进而改变卡合部件与上位机的连接关系，以解除光模块200与上位机的卡合关系，从而可以将光模块200从上位机的笼子里抽出。
电路板300包括电路走线、电子元件及芯片，通过电路走线将电子元件和芯片按照电路设计连接在一起，以实现供电、电信号传输及接地等功能。电子元件例如可以包括电容、电阻、三极管、金属氧化物半导体场效应管(Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET)。芯片例如可以包括微控制单元(Microcontroller Unit，MCU)、限幅放大器(limiting amplifier)、时钟数据恢复芯片(Clock and Data Recovery，CDR)、电源管理芯片、数字信号处理(Digital Signal Processing，DSP)芯片。
电路板300一般为硬性电路板，硬性电路板由于其相对坚硬的材质，还可以实现承载作用，如硬性电路板可以平稳的承载芯片；硬性电路板还可以插入上位机笼子中的电连接器中。
电路板300还包括形成在其端部表面的金手指，金手指由相互独立的多个引脚组成。电路板300插入笼子106中，由金手指与笼子106内的电连接器导通连接。金手指可以仅设置在电路板300一侧的表面(例如图4所示的上表面)，也可以设置在电路板300上下两侧的表面，以适应引脚数量需求大的场合。金手指被配置为与上位机建立电连接，以实现供电、接地、I2C信号传递、数据信号传递等。当然，部分光模块中也会使用柔性电路板。柔性电路板一般与硬性电路板配合使用，以作为硬性电路板的补充。
硅光芯片400与电路板300实现电连接，具体可以是打线连接，如通过半导体键合金线(Gold Wire Bonding)连接。硅光芯片400的周边与电路板300之间通过多条导电线连接，所以硅光芯片400一般设置在电路板300的表面。
硅光芯片400通过第二光纤带401接收来自激光盒500的光，进而对光进行调制，具体为将信号加载到光上；硅光芯片400接收来自光纤插座600的光，进而将光信号转换为电信号。
硅光芯片400与光纤插座600之间通过第一光纤带601实现光连接，光纤插座600实现与光模块外部光纤的光连接。其中，光纤插座600内包括光纤接头。硅光芯片400调制的光通过第一光纤带601传输至光纤插座600的光纤接头，通过光纤接头传输至连接在光纤插座600上的外部光纤。硅光芯片400中集成有光探测器，外部光纤传来的光通过光纤插座600 传输至第一光纤带601，通过第一光纤带601传输至硅光芯片400中并耦合至光探测器，光探测器接收信号光并转换为电信号。本申请实施例提供的光模块通过硅光芯片400，实现向光模块外部光纤输出携带数据的光以及从光模块外部光纤接收携带数据的光。
图3和图4所示结构的光模块仅是本申请中的一种实例，本申请提供的光模块中光信号的发射或接收还可以采用其他结构形式的硅光芯片以及组合形式。
为了解决弱光信号探测和拓宽硅光集成技术应用领域，提高光接收的带宽和响应度，本申请实施例中提供了一种光探测器。图5为根据一些实施例的一种光探测器的俯视图，其中去除了部分BOX层，使能够看到光探测器的内部结构；图6为根据一些实施例的一种光探测器的剖视图；图5和图6示出了本申请实施例提供的光探测器的基本结构。
如图5和6所示，本申请实施例提供的光探测器700包括衬底710和设置在衬底710上方的掩埋层720。在本申请一些实施例中，衬底710可采用硅材料，掩埋层720采用二氧化硅材料，掩埋层720通过二氧化硅材料薄膜沉积形成。
如图5和6所示，本申请实施例提供的光探测器700的掩埋层720中还包括光耦合器730和脊波导740，光耦合器730的底部和顶部接触连接掩埋层720，脊波导740的底部和部分顶部接触连接掩埋层720，脊波导740的一端连接光耦合器730。光耦合器730用于将外部或外部光纤中的信号光耦合至光探测器700，脊波导740用于传输通过光耦合器730耦合进入光探测器700信号光。在本公开的某一些实施例中脊波导740包括连接部741和掺杂部742。连接部741的一端连接光耦合器730、另一端连接掺杂部742，连接部741用于将通过光耦合器730耦合进入光探测器700信号光传输至掺杂部742。掺杂部742用于横向掺杂排布N型掺杂区、电荷区、P型掺杂区等。
在本申请一些实施例中，光耦合器730为光栅耦合器或端面耦合器。
如图5和6所示，本申请实施例提供的光探测器700还包括P型电荷区750、N型掺杂区760、P型掺杂区770、N型接触区761、P型接触区771和锗吸收层780，P型电荷区750、N型掺杂区760、P型掺杂区770、N型接触区761、P型接触区771和锗吸收层780位于掩埋层720内，且P型电荷区750、N型掺杂区760、P型掺杂区770、N型接触区761、P型接触区771掺杂设置在掺杂部742中，锗吸收层780设在脊波导740的顶面上。P型电荷区750设置在掺杂部742的一侧，P型掺杂区设置在掺杂部742的另一侧，N型掺杂区760设置在P型电荷区750远离P型掺杂区的一侧，P型电荷区750与N型掺杂区760之间具有间隔，该间隔为无掺杂的硅区域，用作雪崩倍增区751，N型掺杂区760内掺杂形成N型接触区761，P型掺杂区770内掺杂形成P型接触区771。
在本申请实施例中，P型电荷区750通过P型离子掺杂形成，P型掺杂区770通过P型离子掺杂形成。在本申请一些实施例中，P型电荷区750可与P型掺杂区770接触，或P型电荷区750可与P型掺杂区770有一定的间隔。在本公开的某一些实施例中P型电荷区750与P型掺杂区770可关于掺杂部742的中心轴对称。P型电荷区750的离子掺杂浓度小于P型掺杂区770的离子掺杂浓度。
N型掺杂区760通过N型离子掺杂设置在P型电荷区750远离P型掺杂区770的一侧，N型掺杂区760与P型电荷区750之间存在间隔，该间隔为无掺杂的硅区域，用于形成雪崩倍增区751。在本申请一些实施例中，远离P型掺杂区770的掺杂部742一侧先P型离子掺杂形成P型电荷区750，再间隔一定距离N型离子掺杂形成N型掺杂区760。P型电荷区750与N型掺杂区760形成PN节。
N型掺杂区760内N型离子掺杂形成N型接触区761，N型接触区761用于电连接相应的电极。在本申请一些实施例中，N型接触区761的N型离子掺杂浓度大于N型掺杂区760的N型离子掺杂浓度，以形成良好的N型接触区761，便于与相应电极形成良好的N型电接触，保证N型掺杂区760与相应电极的电路连接。
P型掺杂区770内P型离子掺杂形成P型接触区771，P型接触区771用于电连接相应的电极。在本申请一些实施例中，P型接触区771的P型离子掺杂浓度大于P型掺杂区770的N型离子掺杂浓度，以形成良好的P型接触区771，便于与相应电极形成良好的P型电接触，保证P型掺杂区770与相应电极的电路连接。
锗吸收层780位于掺杂部742的顶面上，锗吸收层780的底面接触连接掺杂部742，用于光探测器700的光吸收区。在本申请一些实施例中，锗吸收层780的横截面为三角形或梯形，锗吸收层780的宽度自与掺杂部742接触部位向远离掺杂部742的方向逐渐减少。在本申请一些实施例中，掺杂部742的顶面上生长Ge薄膜以形成锗吸收层780，且锗吸收层780接触连接P型电荷区750和P型掺杂区770，Ge薄膜形状按照晶体生长角度要求为三角形或梯形，并且降低锗吸收层780的宽度，从而能够在P型离子掺杂形成的P型电荷区750和P型离子掺杂形成的P型掺杂区770的作用下，在锗吸收层780内部形成较强的电场强度，从而提高光生载流子的移动速率，提高器件的3dB调制带宽。
如图5和6所示，本申请实施例提供的光探测器700还包括第一电极762和第二电极772，第一电极762和第二电极772贯穿于掩埋层720。其中：第一电极762的一端电连接N型接触区761，另一端设置在掩埋层720的表面；第二电极772的一端电连接P型接触区771，另一端设置在掩埋层720的表面。第一电极762和第二电极772用于方便光探测器700电连接TIA(跨阻放大器)，通常光探测器700金丝键合的方式电连接TIA。在本申请一些实施例中，第一电极762和第二电极772可为多层结构或单层结构，图5中第一电极762和第二电极772为双层结构，具体可根据掩埋层720的厚度以及实际需要进行选择。在本申请一些实施例中，第一电极762和第二电极772分别对应在N型接触区761和P型接触区771上方通过沉积金属形成。
本申请实施例提供的光探测器700使用中，外部信号光通过光耦合器730耦合至脊波导740中，通过脊波导740的连接部741传输至脊波导的掺杂部742，然后利用横向设置在掺杂部742的P型电荷区750、N型掺杂区760、雪崩倍增区751、P型掺杂区770、N型接触区761和P型接触区771以及设置在掺杂部742顶面上的锗吸收层780，使N型掺杂区760和雪崩倍增区751分布在脊波导740同一侧区域，锗吸收层780位于脊波导740的掺杂部742区域上方，从而能够实现光场吸收和载流子雪崩倍增区的分开，用于提高光探测器700的带宽和响应度。另外，本申请提供的光探测器700采用波导型的光耦合方式，能够在硅光平台实现片上集成，避免了工艺复杂的butt-coupling的端面光耦合方式。
在本申请一些实施例中，脊波导740的掺杂部742包括第一薄波导区7421、第二薄波导区7422和厚波导区7423，第一薄波导区7421位于厚波导区7423的一侧，第二薄波导区7422位于厚波导区7423的另一侧，第一薄波导区7421和第二薄波导区7422的厚度小于厚波导区7423的厚度，如此第一薄波导区7421、第二薄波导区7422和厚波导区7423形成包括厚波导和薄波导的“凸”状结构。N型掺杂区760位于第一薄波导区7421，P型接触区771位于第二薄波导区7422，锗吸收层780位于厚波导区7423的顶面上。在本公开的某一些实施例中第一薄波导区7421的厚度为90nm，第二薄波导区7422的厚度为90nm，厚波导区7423的厚 度为220nm。
在本申请一些实施例中，P型电荷区750自厚波导区7423延伸至第一薄波导区7421，即P型电荷区750的一部分位于厚波导区7423、另一部分位于第一薄波导区7421，进而雪崩倍增区751位于第一薄波导区7421。在本公开的某一些实施例中P型电荷区750的一端靠近厚波导区7423的中心轴。
在本申请一些实施例中，P型掺杂区770自厚波导区7423延伸至第二薄波导区7422，即P型掺杂区770的一部分位于厚波导区7423、另一部分位于第二薄波导区7422。在本公开的某一些实施例中P型掺杂区770的一端靠近厚波导区7423的中心轴。
为便于耦合进入光探测器700信号光的传输，在本申请一些实施例中，脊波导740还包括渐变部743，渐变部743的一端连接连接部741、另一端连接掺杂部742，用于实现脊波导740上连接部741到掺杂部742的渐变，如宽度方向的渐变。
在本申请一些实施例中，渐变部包括第一渐变波导区7431、第二渐变波导区7432和第三渐变波导区7433；第一渐变波导区7431的一端连接连接部741、另一端连接第一薄波导区7421，用于实现连接部741到第一薄波导区7421的渐变，如宽度方向上的渐变，即第一渐变波导区7431用于实现连接部741到第一薄波导区7421的宽度延伸渐变；第二渐变波导区7432的一端连接连接部741、另一端连接第二薄波导区7422，用于实现连接部741到第二薄波导区7422的渐变，如宽度方向上的渐变，即第二渐变波导区7432用于实现连接部741到第二薄波导区7422的宽度延伸渐变；第三渐变波导区7433的一端连接连接部741、另一端连接厚波导区7423，用于实现连接部741到厚波导区7423的渐变，如宽度方向上的渐变，即第三渐变波导区7433用于实现连接部741到厚波导区7423的宽度延伸渐变。
本申请实施例提供的光探测器700除了上述集成自上述实施例中的硅光芯片400中，还可以为单独的光探测器，即光探测器700不与光发射部分相关的结构集成在一个硅光芯片中。
基于上述实施例提供的光探测器，本申请还提供了一种光探测器的制备方法，用于制备本申请实施例提供的光探测器。本申请实施例提供的光探测器的制备方法，包括：
在SOI晶圆上形成光耦合器和脊波导，所述脊波导包括连接的连接部和掺杂部，所述连接部的一端连接所述光耦合器；
在所述掺杂部上形成P型掺杂区和P型电荷区，所述P型电荷区的离子掺杂浓度小于所述P型掺杂区的离子掺杂浓度；
在所述掺杂部上形成N型掺杂区，所述N型掺杂区位于所述P型电荷区远离所述P型掺杂区的一侧，所述N型掺杂区与所述P型电荷区形成雪崩倍增区；
在所述P型掺杂区形成P型接触区，所述P型接触区的离子掺杂浓度大于所述P型掺杂区的浓度；
在所述N型掺杂区形成N型接触区，所述N型接触区的离子掺杂浓度大于所述N型掺杂区的离子掺杂浓度；
在所述掺杂部的顶面上形成锗吸收层；
在所述N型接触区上方形成第一电极，所述第一电极电连接所述N型接触区；
在所述P型接触区上方形成第二电极，所述第二电极电连接所述P型接触区。
图7为根据一些实施例的一种SOI晶圆的结构示意图。如图7所示，SOI晶圆包括衬底710、设置在衬底710上方的中间BOX层721以及设置在中间BOX层721上方的硅层740-1。通过对SOI晶圆顶部的硅层进行CMOS工艺加工形成光耦合器730和脊波导740，光耦合器 730连接脊波导740。
图8为根据一些实施例的一种SOI晶圆顶部硅层被加工后的结构示意图。如图8所示，脊波导740的掺杂部742包括第一薄波导区7421、第二薄波导区7422和厚波导区7423，第一薄波导区7421位于厚波导区7423的一侧，第二薄波导区7422位于厚波导区7423的另一侧，第一薄波导区7421和第二薄波导区7422的厚度小于厚波导区7423的厚度。
图9为根据一些实施例的一种脊波导的掺杂部上形成N型掺杂区的结构示意图。如图9所示方向，P型电荷区750在掺杂部742的左侧通过P型离子掺杂形成。在本公开的某一些实施例中在掺杂部742的左侧上开设窗口，在窗口中注入P型离子，以形成P型电荷区750。在本公开的某一些实施例中如图9所示，P型电荷区750自厚波导区7423延伸至第一薄波导区7421。
图10为根据一些实施例的一种脊波导的掺杂部上形成P型掺杂区的结构示意图。如图9所示方向，P型掺杂区770在掺杂部742的右侧通过P型离子掺杂形成。在本公开的某一些实施例中在掺杂部742的右侧上开设窗口，在窗口中注入P型离子，以形成P型掺杂区770。在本公开的某一些实施例中如图10所示，P型掺杂区770自厚波导区7423延伸至第二薄波导区7422。P型掺杂区770的掺杂离子浓度大于P型电荷区750的离子掺杂浓度。
图11为根据一些实施例的一种脊波导的掺杂部上形成电荷区的结构示意图。如图11所示方向，在P型电荷区750的左侧掺杂部742上通过N型离子掺杂形成N型掺杂区760，N型掺杂区760位于P型电荷区750远离P型掺杂区770的一侧，N型掺杂区760与P型电荷区750之间存在间隔，该间隔为无掺杂的硅区域，用以形成雪崩倍增区751。在本公开的某一些实施例中在P型电荷区750的左侧掺杂部742上开设窗口，在窗口中注入的N型离子，以形成N型掺杂区760。
图12为根据一些实施例的一种脊波导的掺杂部上形成N型接触区的结构示意图。如图12所示，在N型掺杂区760上通过N型离子掺杂形成N型接触区761。N型接触区761的N型离子掺杂浓度大于N型掺杂区760的N型离子掺杂浓度。在本公开的某一些实施例中在N型掺杂区760上稍远离P型电荷区750的位置开设窗口，在窗口中注入离子掺杂浓度大于N型掺杂区760的N型离子，以形成N型接触区761。
图13为根据一些实施例的一种脊波导的掺杂部上形成P型接触区的结构示意图。如图13所示，P型掺杂区770上通过P型离子掺杂形成P型接触区771。P型接触区771的P型离子掺杂浓度大于P型掺杂区770的P型离子掺杂浓度。在本公开的某一些实施例中在P型掺杂区770上远离P型电荷区750的位置开设窗口，在窗口中注入离子掺杂浓度大于P型掺杂区770的P型离子，以形成P型接触区771。
图14为根据一些实施例的一种脊波导的掺杂部上形成锗吸收层的结构示意图。如图13所示，在掺杂部742的厚波导区7423上选择性生长Ge薄膜形成锗吸收层780，且锗吸收层780位于P型电荷区750和P型掺杂区770的上方，锗吸收层780在P型电荷区750和P型掺杂区770作用下，可以在锗吸收层780内部形成电场分布。
在锗吸收层780形成完成后，继续生长二氧化硅，形成掩埋层720，用于保护N型掺杂区760、P型电荷区750等。图15为根据一些实施例的一种BOX层上形成电极的结构示意图。如图15所示，在N型接触区761和P型接触区771上方分别开设窗口，N型接触区761和P型接触区771上方的窗口中沉积接触电极对应形成第一电极762和第二电极772。图15中第一电极762和第二电极772为单层结构。
图16为根据一些实施例的一种光探测器的使用状态图。如图16所示，光纤连接光探测器700，光纤中传输的高速光信号通过光耦合器730耦合进入光探测器700，进而将高速光信号耦合进光探测器中完成高速光信号雪崩探测；光探测器700与TIA电芯片之间通过金丝键合的方式连接，光探测器700输出的高速电流信号通过键合金丝流入到TIA电芯片中，经过TIA电芯片的跨阻放大转完成高速电压信号，从而完成高速光信号的探测。在本本申请实施例中，光探测器700集成封装在硅光芯片400中，硅光芯片400可以是单路或多路结构，也可以集成上单路或多路的硅光调制器形成收发一体的光集成芯片。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (10)

  1. 一种光探测器，用于光模块，包括：
    衬底；
    掩埋层，设置在所述衬底的上方；
    光耦合器，位于所述掩埋层内，用于耦合外部信号光；
    脊波导，位于所述掩埋层内，包括连接的连接部和掺杂部，所述连接部的一端连接所述光耦合器，高速信号光通过所述光耦合器耦合传输至所述连接部；
    P型掺杂区，位于所述掺杂部的一侧，采用P型离子掺杂；
    P型电荷区，位于所述掺杂部的另一侧，采用P型离子掺杂，所述P型电荷区的离子掺杂浓度小于所述P型掺杂区的离子掺杂浓度；
    N型掺杂区，位于所述P型电荷区远离所述P型掺杂区的一侧，采用N型离子掺杂，与所述P型电荷区之间具有间隔，所述间隔用作雪崩倍增区；
    P型接触区，位于所述P型掺杂区，所述P型接触区的离子掺杂浓度大于所述P型掺杂区的浓度；
    N型接触区，位于所述N型掺杂区，所述N型接触区的离子掺杂浓度大于所述N型掺杂区的离子掺杂浓度；
    第一电极，一端电连接所述N型接触区，另一端设置在所述掩埋层的表面；
    第二电极，一端电连接所述P型接触区，另一端设置在所述掩埋层的表面；
    锗吸收层，位于所述掺杂部的顶面上。
  2. 根据权利要求1所述光探测器，其中，所述脊波导的掺杂部包括第一薄波导区、第二薄波导区和厚波导区，所述第一薄波导区位于所述厚波导区的一侧，所述第二薄波导区位于所述厚波导区的另一侧；
    所述N型掺杂区位于所述第一薄波导区，所述P型接触区位于所述第二薄波导区；
    所述锗吸收层位于所述厚波导区的顶面上。
  3. 根据权利要求1所述的光探测器，其中，所述锗吸收层的横截面为三角形或梯形，较大面积的所述锗吸收层底部与所述掺杂部的顶部接触连接。
  4. 根据权利要求2所述的光探测器，其中，所述P型掺杂区自所述厚波导区延伸至所述第二薄波导区；
    和/或，所述P型电荷区自所述厚波导区延伸至所述第二薄波导区。
  5. 根据权利要求2所述的光探测器，其中，所述脊波导还包括渐变部，所述渐变部包括第一渐变波导区、第二渐变波导区和第三渐变波导区；
    所述第一渐变波导区的一端连接所述连接部、另一端连接所述第一薄波导区，用于实现所述连接部到所述第一薄波导区的宽度延伸渐变；
    所述第二渐变波导区的一端连接所述连接部、另一端连接所述第二薄波导区，用于实现所述连接部到所述第二薄波导区的宽度延伸渐变；
    所述第三渐变波导区的一端连接所述连接部、另一端连接所述厚波导区，用于实现所述连接部到所述厚波导区的宽度延伸渐变。
  6. 根据权利要求1所述的光探测器，其中，所述第一电极为单层结构或多层结构；
    和/或，所述第二电极为单层结构或多层结构。
  7. 根据权利要求1所述的光探测器，其中，所述光耦合器为光栅耦合器或端面耦合器；
    和/或，所述P型掺杂区与所述N型掺杂区之间存在间隔且轴对称部在所述掺杂部上。
  8. 根据权利要求2所述的光探测器，其中，所述第一薄波导区的厚度为90nm，所述第二薄波导区的厚度为90nm，所述厚波导区的厚度为220nm。
  9. 一种光探测器的制备方法，其中，用于制备权利要求1中所述的光探测器，所述方法包括：
    在SOI晶圆上形成光耦合器和脊波导，所述脊波导包括连接的连接部和掺杂部，所述连接部的一端连接所述光耦合器；
    在所述掺杂部上形成P型掺杂区和P型电荷区，所述P型电荷区的离子掺杂浓度小于所述P型掺杂区的离子掺杂浓度；
    在所述掺杂部上形成N型掺杂区，所述N型掺杂区位于所述P型电荷区远离所述P型掺杂区的一侧，所述N型掺杂区与所述P型电荷区形成雪崩倍增区；
    在所述P型掺杂区形成P型接触区，所述P型接触区的离子掺杂浓度大于所述P型掺杂区的浓度；
    在所述N型掺杂区形成N型接触区，所述N型接触区的离子掺杂浓度大于所述N型掺杂区的离子掺杂浓度；
    在所述掺杂部的顶面上形成锗吸收层；
    在所述N型接触区上方形成第一电极，所述第一电极电连接所述N型接触区；
    在所述P型接触区上方形成第二电极，所述第二电极电连接所述P型接触区。
  10. 一种光模块，其中，包括：
    电路板；
    第一光纤带，连接光纤接头，用于接收并传输外部信号光；
    硅光芯片，电连接所述电路板以及光连接所述第一光纤带，集成有光探测器，所述光探测器接收通过所述第一光纤带传输的信号光；
    其中：所述光探测器为权利要求1所述的光探测器或权利要求9所述的制备方法制备的光探测器。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119225085A (zh) * 2024-12-03 2024-12-31 上海赛丽微电子有限公司 光开关与光通信网络交换芯片

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113611759B (zh) * 2021-07-28 2023-08-08 青岛海信宽带多媒体技术有限公司 一种光探测器、制备方法以及光模块

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7397101B1 (en) * 2004-07-08 2008-07-08 Luxtera, Inc. Germanium silicon heterostructure photodetectors
US20170338367A1 (en) * 2014-03-10 2017-11-23 Elenion Technologies, Llc Lateral avalanche photodetector
CN111628036A (zh) * 2020-07-30 2020-09-04 武汉光谷信息光电子创新中心有限公司 一种具有谐振波导结构的光电探测器
US20200313021A1 (en) * 2019-03-27 2020-10-01 Photonics Electronics Technology Research Association Photodetector
CN111933742A (zh) * 2020-07-30 2020-11-13 武汉光谷信息光电子创新中心有限公司 一种雪崩光电探测器及其制备方法
CN112038441A (zh) * 2020-09-11 2020-12-04 中国科学院半导体研究所 一种波导耦合的硅基光电探测器及其制备方法
CN113611759A (zh) * 2021-07-28 2021-11-05 青岛海信宽带多媒体技术有限公司 一种光探测器、制备方法以及光模块
CN114256376A (zh) * 2021-12-29 2022-03-29 武汉光谷信息光电子创新中心有限公司 雪崩光电探测器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417528B1 (en) * 2000-01-28 2002-07-09 Agere Systems Guardian Corp. High speed semiconductor photodetector
US20100148221A1 (en) * 2008-11-13 2010-06-17 Zena Technologies, Inc. Vertical photogate (vpg) pixel structure with nanowires
WO2015120583A1 (zh) * 2014-02-12 2015-08-20 华为技术有限公司 一种雪崩光电二极管及其制造方法
CN104882509B (zh) * 2015-04-05 2017-04-19 北京工业大学 一种波导对接耦合型吸收倍增分离雪崩二极管
CN111952399B (zh) * 2020-08-20 2022-02-25 中国科学院半导体研究所 一种波导耦合的光电探测器及其制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7397101B1 (en) * 2004-07-08 2008-07-08 Luxtera, Inc. Germanium silicon heterostructure photodetectors
US20170338367A1 (en) * 2014-03-10 2017-11-23 Elenion Technologies, Llc Lateral avalanche photodetector
US20200313021A1 (en) * 2019-03-27 2020-10-01 Photonics Electronics Technology Research Association Photodetector
CN111628036A (zh) * 2020-07-30 2020-09-04 武汉光谷信息光电子创新中心有限公司 一种具有谐振波导结构的光电探测器
CN111933742A (zh) * 2020-07-30 2020-11-13 武汉光谷信息光电子创新中心有限公司 一种雪崩光电探测器及其制备方法
CN112038441A (zh) * 2020-09-11 2020-12-04 中国科学院半导体研究所 一种波导耦合的硅基光电探测器及其制备方法
CN113611759A (zh) * 2021-07-28 2021-11-05 青岛海信宽带多媒体技术有限公司 一种光探测器、制备方法以及光模块
CN114256376A (zh) * 2021-12-29 2022-03-29 武汉光谷信息光电子创新中心有限公司 雪崩光电探测器及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119225085A (zh) * 2024-12-03 2024-12-31 上海赛丽微电子有限公司 光开关与光通信网络交换芯片

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