WO2023001162A1

WO2023001162A1 - Electronic device

Info

Publication number: WO2023001162A1
Application number: PCT/CN2022/106608
Authority: WO
Inventors: 祝文祥
Original assignee: 维沃移动通信有限公司
Priority date: 2021-07-23
Filing date: 2022-07-20
Publication date: 2023-01-26
Also published as: CN113572357A; CN113572357B

Abstract

The present application discloses an electronic device, which belongs to the technical field of electronic devices. The electronic device comprises a power supply module, a mode switching module and a power supply management integrated module. The power supply module, the mode switching module, and the power supply management integrated module are electrically connected in sequence, and the mode switching module is between the power supply module and the power supply management integrated module. The mode switching module is used to switch the electronic device between a first mode and a second mode. In the first mode, the mode switching module is in an open-circuit state, and the power supply module is disconnected from the power supply management integrated module; and in the second mode, the mode switching module is in a closed-circuit state, and the power supply module is connected to the power supply management integrated module.

Description

Electronic equipment

Cross references to related applications:

This application claims priority to a Chinese patent application with application number 202110842427.6 entitled "Electronic Equipment" filed with the China Patent Office on July 23, 2021, the entire contents of which are incorporated herein by reference.

technical field

The present application belongs to the technical field of electronic equipment, and in particular relates to an electronic equipment.

Background technique

With the development of communication technology, the range of sales and transportation of electronic equipment is becoming wider and wider. However, it takes a long time for electronic equipment to be produced, transported, and sold. Since the time from transportation to sales will exceed the standby time, many users buy new mobile phones for the first time because they are out of power and cannot be turned on, or the battery is over-discharged and it takes a long time to charge the battery to the voltage that can be turned on. affect the user experience.

Contents of the invention

The purpose of the embodiments of the present application is to provide an electronic device that can solve the problem of relatively fast standby power consumption of the electronic device in the prior art.

An embodiment of the present application provides an electronic device, and the electronic device includes a power module, a mode switching module, and a power management integration module;

The power module, the mode switching module and the integrated power management module are electrically connected in sequence, and the mode switching module is located between the power module and the integrated power management module;

Wherein, the mode switching module is used to switch the electronic device between the first mode and the second mode, in the first mode, the mode switching module is in a disconnected state, and the power supply module and the The connection of the integrated power management module is disconnected; in the second mode, the mode switching module is in the on state, and the connection between the power supply module and the integrated power management module is turned on.

Optionally, the electronic device further includes a processor, the processor is connected to the mode switching module, and the processor is used to control the switching of the mode switching module.

Optionally, the mode switching module includes a boost component and a field effect transistor, the boost component is connected to the field effect transistor, and the boost component is used to control the gate and drain of the field effect transistor between on and off;

One of the source and the drain is connected to the power module, and the other is connected to the power management integrated module.

Optionally, the drain is connected to the power module, and the source is connected to the integrated power management module;

Alternatively, the source is connected to the power module, and the drain is connected to the integrated power management module.

Optionally, the input terminal of the boost component is connected to the source of the field effect transistor, and the output terminal of the boost component is connected to the gate of the field effect transistor.

Optionally, the boost component is a boost chip or a separate boost circuit.

Optionally, after the boost component is connected to an external power supply, the boost component is activated, the field effect transistor is turned on, and the power module communicates with the integrated power management module;

After the boost component is disconnected from the external power supply, the field effect transistor remains turned on, and the power supply module remains connected to the integrated power management module.

Optionally, the voltage at the input terminal of the boost component is Vin, the enable level of the boost component is EN, the voltage at the output terminal of the boost component is Vout, and the voltage of the integrated power management module is Vbat, the threshold voltage of the field effect transistor is Vth, and the voltage between the gate and the source in the field effect transistor is Vgs;

After the boost component is connected to the external power supply, Vin=EN=Vbat, and Vout>Vin+Vth, the power management integrated module generates an activation voltage, and the boost component works; at this time, Vout-Vbat=Vgs >Vth, the source and the drain are turned on, and the power module is connected to the integrated power management module.

Optionally, a diode is arranged in parallel on the source and the drain.

Optionally, the gate of the field effect transistor is grounded, and a resistor is provided between the gate and the ground terminal.

In this embodiment of the application, the setting of the mode switching module can disconnect the power supply module and the power management integrated module as required, thereby isolating the power consumption of the back end of the resistance device, reducing the power consumption speed of the electronic device in the standby state, and making the power supply The module has a longer standby time. Improve the straight-through rate of production lines and improve the production yield of electronic equipment. In the state of use, the normal use and charging of electronic equipment can be guaranteed. The embodiment of the present application has the beneficial effect that the wear and tear of the electronic device is slow when it is in standby.

Description of drawings

Fig. 1 is a schematic diagram of the structure of the electronic equipment in the embodiment of the present application when the power supply module, the mode switching module and the power management integration module are connected;

Fig. 2 is a schematic structural diagram embodying a connection mode of the mode switching module in the embodiment of the present application;

Fig. 3 is a schematic structural diagram embodying another connection mode of the mode switching module in the embodiment of the present application.

Explanation of reference signs:

10. Power module; 20. Mode switching module; 21. Boost component; 22. Field effect transistor; 23. Diode; 30. Power management integrated module; 40. Processor; 50. Ground terminal; 60. Resistor.

specific embodiment

The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

The terms "first", "second" and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific sequence or sequence. It should be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application can be practiced in sequences other than those illustrated or described herein, and that references to "first," "second," etc. distinguish Objects are generally of one type, and the number of objects is not limited. For example, there may be one or more first objects. In addition, "and/or" in the specification and claims means at least one of the connected objects, and the character "/" generally means that the related objects are an "or" relationship.

The electronic device provided by the embodiments of the present application will be described in detail below through specific embodiments and application scenarios with reference to the accompanying drawings.

Referring to FIGS. 1 to 3 , an embodiment of the present application provides an electronic device, which includes a power supply module 10 , a mode switching module 20 and a power management integration module 30 ;

The power supply module 10, the mode switching module 20 and the power management integration module 30 are electrically connected in sequence, and the mode switching module 20 is located between the power supply module 10 and the power management integration module 30;

Wherein, the mode switching module 20 is used to switch the electronic device between the first mode and the second mode, and in the first mode, the mode switching module 20 is in a disconnected state, and the power supply module 10 The connection with the integrated power management module 30 is disconnected; in the second mode, the mode switching module 20 is in the on state, and the connection between the power supply module 10 and the integrated power management module 30 is turned on.

In the embodiment of the present application, the setting of the mode switching module 20 can disconnect the power supply module 10 and the power management integrated module 30 as required, thereby isolating the power consumption of the rear end of the resistor 60 device and reducing the power consumption of the electronic device in the standby state speed, so that the standby time of the power module 10 is longer. In the state of use, the normal use and charging of electronic equipment can be guaranteed. The embodiment of the present application has the beneficial effect that the wear and tear of the electronic device is slow when it is in standby.

It should be noted that the electronic equipment with the first mode in this application can also prevent static electricity from being generated in the process of pulling out the battery BTB (board-to-board connector) during the assembly stage and damage the components in the back-end circuit, thereby improving production efficiency. The straight-through rate of line production improves the production yield of electronic equipment.

It should be noted that the mode switching module 20 of the present application can be controlled by corresponding software or programs, or can be controlled by a trigger type control, or by a combination of two control methods to control the mode switching module 20, and then control the The mode of the electronic device is switched. Moreover, the switching modes between the first mode and the second mode can be set differently according to the needs, for example: when the second mode is switched to the first mode, it can be controlled by software or program; when the first mode is switched to the second mode , can be controlled by triggering, for example, the mode switching module 20 directly or indirectly generates a high-level enable under the action of an external power supply, and then triggers and activates the mode switching module 20 to realize switching from the first mode to the second mode .

Optionally, in the embodiment of the present application, the electronic device further includes a processor 40, the processor 40 is connected to the mode switching module 20, and the processor 40 is used to control the mode switching module 20 on and off.

In the embodiment of the present application, the setting of the processor 40 may control the mode switching module 20 through a control signal. The control signal may be a corresponding enable signal. The processor 40 can also be connected with the integrated power management module 30 so as to control the integrated power management module 30 .

Optionally, in the embodiment of the present application, the mode switching module 20 includes a boost component 21 and a field effect transistor 22 (MOS transistor), the boost component 21 is connected to the field effect transistor 22, and the The boost component 21 is used to control the on-off between the gate and the drain in the field effect transistor 22; wherein, referring to FIG. 2 and FIG. 3, the three electrodes of the field effect transistor 22 are respectively: the gate G, the source pole S, drain D.

One of the source and the drain is connected to the power module 10 , and the other is connected to the power management integrated module 30 .

In the embodiment of the present application, the booster component 21 is configured to control the on-off of the three electrodes in the field effect transistor 22 by changing the voltage. Specifically, the on-off between the gate and the drain of the field effect transistor 22 can be controlled to realize switching of the electronic device between the first mode and the second mode. The connection mode of the source and the drain can be changed as required, wherein the drain can be set to be connected to the power module 10, and the source can be connected to the power management integrated module 30 (see the embodiment in FIG. 2); it can be set to the source It is connected to the power module 10, and the drain is connected to the power management integrated module 30 (see the embodiment in FIG. 3).

Optionally, in the embodiment of the present application, the input terminal of the boost component 21 is connected to the source of the field effect transistor 22, and the output terminal of the boost component 21 is connected to the source of the field effect transistor 22. Gate connection.

In the embodiment of this application, the two implementations in this application need to meet the requirements: the input terminal of the boost component 21 is connected to the source of the field effect transistor 22, and the output terminal of the boost component 21 is connected to the gate of the field effect transistor 22. Pole connection; in different implementations, the booster assembly 21 will have different setting positions.

Optionally, in the embodiment of the present application, the booster component 21 is connected to the processor 40 through a signal transmission line, and the processor 40 controls the booster component 21 through an enable signal, and the enable signal is high enable.

In the embodiment of the present application, the boost component 21 can be switched under the control of the processor 40 , and the state of the boost component 21 can be changed through the processor 40 in cooperation with corresponding software or programs. For example, the interface windows for controlling the enabling signals of the booster components 21 can be provided through software, and the booster components 21 can be controlled by the operator’s control clicks, for example, an enabling signal for turning off the booster components 21 can be sent. The enable signal activated by the booster component 21 can be enabled at a high level, so that it can be charged by an external power supply (such as the power interface of a charger, which can be charged by a power bank or a household power supply).

Optionally, in the embodiment of the present application, the boost component 21 is a boost chip or a separate boost circuit.

In the embodiment of the present application, the boost chip is an integrated power converter, such as a switched capacitor voltage converter (charge pump), also known as a charge pump, or a DC-DC converter (DC -DC converter). The split boost circuit is a split power converter.

Optionally, in this embodiment of the application, after the boost component 21 is connected to an external power supply, the boost component 21 is activated, the field effect transistor 22 is turned on, and the power module 10 and the The power management integrated module 30 is connected;

After the booster component 21 is disconnected from the external power supply, the field effect transistor 22 remains turned on, and the power module 10 and the integrated power management module 30 remain connected.

In the embodiment of the present application, the above steps can be activated by an external power supply to realize the conduction of the field effect transistor 22, and then connect the power supply module 10 and the power management integrated module 30 to realize the switching from the transportation state to the use state. After the external power supply is disconnected, since the field effect transistor 22 can maintain the conduction state, the power supply module 10 and the power management integrated module 30 can be kept connected, thereby maintaining the use state of the electronic device. Only when the electronic device needs to be on standby for a long time again or transported over a long distance, the processor 40 can enable the transport state. That is to say, the transportation state is a state that is turned on for a short time or occasionally, and the use state is the normal state of the electronic device.

Optionally, in the embodiment of the present application, the voltage at the input terminal of the boost component 21 is Vin, the enable level of the boost component 21 is EN, and the voltage at the output terminal of the boost component 21 is Vout, the voltage of the integrated power management module 30 is Vbat, the threshold voltage of the field effect transistor 22 is Vth, and the voltage between the gate and the source of the field effect transistor 22 is Vgs;

After the boost component 21 is connected to an external power supply, Vin=EN=Vbat, and Vout>Vin+Vth, the integrated power management module 30 generates an activation voltage, and the boost component 21 works; at this time, Vout- Vbat=Vgs>Vth, the source and the drain are turned on, and the power module 10 is connected to the integrated power management module 30 .

In the embodiment of the present application, the above-mentioned structure describes the process of activating the sound component and making the source and drain conduct. From this, it can be concluded that the boost component 21 is triggered after the external power supply is connected, specifically through The power management integrated module 30 generates an activation voltage to make the booster component 21 enter the working state, and the booster component 21 in the working state will trigger the conduction of the source and drain to realize the communication between the power module 10 and the power management integrated module 30 .

It should be noted that the above-mentioned threshold voltage is the critical voltage at which the state of the MOS tube changes. When the MOS tube changes from depletion to inversion, it will experience a state where the electron concentration on the Si surface is equal to the hole concentration. At this time, the MOS transistor is in a critical conduction state, and the gate voltage of the MOS transistor at this time can be defined as a threshold voltage, which is one of the important parameters of the MOS transistor.

Optionally, in the embodiment of the present application, a diode 23 is arranged in parallel on the source and the drain.

In the embodiment of the present application, the setting of the diode 23 can protect the field effect transistor 22 and can reduce conduction loss. The diode 23 can be set as a Schottky diode. When the current flowing through SD (gate G, source S, drain D) is too large, it can shunt a part, and then realize the protection of the field effect transistor 22; the field effect transistor 22 of the present application can also use the diode 23 Contacted in the field effect transistor 22, the diode integrated in the field effect transistor 22 can be called a body diode. For the occasion of high-speed switching, the body diode cannot be quickly turned on due to the slow turn-on speed, and the current cannot pass, which may damage the MOS. A field effect transistor 22 with a diode 23 connected in parallel can be used. The voltage drop of the body diode is greater than that of the external parallel diode 23 , and its conduction loss is larger. Compared with the body diode, the external parallel diode 23 can reduce the conduction loss.

Optionally, in the embodiment of the present application, the gate of the field effect transistor 22 is grounded, and a resistor 60 is provided between the gate and the ground terminal 50 .

In the embodiment of the present application, the setting of the resistor 60 here is for the isolation and impedance matching between the front and rear stages of the field effect transistor 22, so that the signal can be transmitted more perfectly.

It should be noted that, in this document, the term "comprising", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or device. Without further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising that element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved. Functions are performed, for example, the described methods may be performed in an order different from that described, and various steps may also be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementations. The above-mentioned specific implementations are only illustrative and not restrictive. Those of ordinary skill in the art will Under the inspiration of this application, without departing from the purpose of this application and the scope of protection of the claims, many forms can also be made, all of which belong to the protection of this application.

It should be understood that the embodiments described in the embodiments of the present application may be implemented by hardware, software, firmware, middleware, microcode or a combination thereof. For hardware implementation, modules, units, and subunits can be implemented in one or more application specific integrated circuits (Application Specific Integrated Circuits, ASIC), digital signal processor (Digital Signal Processor, DSP), digital signal processing equipment (DSP Device, DSPD ), programmable logic device (Programmable Logic Device, PLD), field-programmable gate array (Field-Programmable Gate Array, FPGA), general-purpose processor, controller, microcontroller, microprocessor, used to implement the application other electronic units or combinations thereof.

Claims

An electronic device, the electronic device comprising a power module, a mode switching module and a power management integration module;

The power module, the mode switching module and the integrated power management module are electrically connected in sequence, and the mode switching module is located between the power module and the integrated power management module;

Wherein, the mode switching module is used to switch the electronic device between the first mode and the second mode, in the first mode, the mode switching module is in a disconnected state, and the power supply module and the The connection of the integrated power management module is disconnected; in the second mode, the mode switching module is in the on state, and the connection between the power supply module and the integrated power management module is turned on.
The electronic device according to claim 1, wherein the electronic device further comprises a processor, the processor is connected to the mode switching module, and the processor is used to control the switching of the mode switching module.
The electronic device according to claim 2, wherein the mode switching module includes a boost component and a field effect transistor, the boost component is connected to the field effect transistor, and the boost component is used to control the field On-off between gate and drain in effect transistors;

One of the source and the drain is connected to the power module, and the other is connected to the power management integrated module.
The electronic device according to claim 3, wherein the drain is connected to the power module, and the source is connected to the integrated power management module;

Alternatively, the source is connected to the power module, and the drain is connected to the integrated power management module.
The electronic device according to claim 3, wherein the input terminal of the boosting component is connected to the source of the field effect transistor, and the output terminal of the boosting component is connected to the gate of the field effect transistor.
The electronic device according to claim 3, wherein the boost component is a boost chip or a separate boost circuit.
The electronic device according to claim 3, wherein, after the boost component is connected to an external power supply, the boost component is activated, the field effect transistor is turned on, and the power module is integrated with the power management Module connectivity;

After the boost component is disconnected from the external power supply, the field effect transistor remains turned on, and the power supply module remains connected to the integrated power management module.
The electronic device according to claim 7, wherein the voltage at the input terminal of the boost component is Vin, the enable level of the boost component is EN, and the voltage at the output terminal of the boost component is Vout, so The voltage of the power management integrated module is Vbat, the threshold voltage of the field effect transistor is Vth, and the voltage between the gate and the source of the field effect transistor is Vgs;

After the boost component is connected to an external power supply, Vin=EN=Vbat, and Vout>Vin+Vth, the power management integrated module generates an activation voltage, and the boost component works; at this time, Vout-Vbat=Vgs >Vth, the source and the drain are turned on, and the power module is connected to the integrated power management module.
The electronic device according to claim 3, wherein diodes are arranged in parallel on the source and the drain.
The electronic device according to claim 3, wherein the gate of the field effect transistor is grounded, and a resistor is provided between the gate and the ground.