CN113572357B - Electronic device - Google Patents
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- CN113572357B CN113572357B CN202110842427.6A CN202110842427A CN113572357B CN 113572357 B CN113572357 B CN 113572357B CN 202110842427 A CN202110842427 A CN 202110842427A CN 113572357 B CN113572357 B CN 113572357B
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- module
- power supply
- management integrated
- mode switching
- field effect
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J2207/20—Charging or discharging characterised by the power electronics converter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Direct Current Feeding And Distribution (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The application discloses electronic equipment belongs to electronic equipment technical field. The electronic equipment comprises a power supply module, a mode switching module and a power supply management integrated module; the power supply module, the mode switching module and the power supply management integrated module are electrically connected in sequence, and the mode switching module is positioned between the power supply module and the power supply management integrated module; the mode switching module is used for switching the electronic equipment between a first mode and a second mode, and in the first mode, the mode switching module is in an open circuit state, and the power supply module is disconnected from the power supply management integrated module; and in the second mode, the mode switching module is in a pass-through state, and the power supply module is connected and conducted with the power supply management integrated module. The embodiment of the application has the beneficial effects that the electric quantity loss of the electronic equipment is slow when the electronic equipment is in a standby state, and the production yield of the electronic equipment is high.
Description
Technical Field
The application belongs to the technical field of electronic equipment, and particularly relates to electronic equipment.
Background
With the development of communication technology, electronic devices are increasingly sold and transported. However, electronic devices take a long time from production, transportation, and sale. The time for transportation to sale exceeds the standby time, so that a plurality of new mobile phones bought by users cannot be started due to power failure when being started for the first time, or the batteries can be charged to a voltage capable of starting for a long time due to over discharge of the batteries, and the user experience is greatly influenced.
Disclosure of Invention
An object of the embodiments of the present application is to provide an electronic device, which can solve the problem that standby power consumption of an electronic device in the prior art is fast.
In order to solve the technical problem, the present application is implemented as follows:
the embodiment of the application provides electronic equipment, which comprises a power supply module, a mode switching module and a power supply management integrated module;
the power supply module, the mode switching module and the power supply management integrated module are electrically connected in sequence, and the mode switching module is positioned between the power supply module and the power supply management integrated module;
the mode switching module is used for switching the electronic equipment between a first mode and a second mode, and in the first mode, the mode switching module is in an open circuit state, and the power supply module is disconnected from the power supply management integrated module; and in the second mode, the mode switching module is in a pass-through state, and the power supply module is connected and conducted with the power supply management integrated module.
In the embodiment of the application, the mode switching module is arranged to disconnect the power supply module and the power management integrated module as required, so that power consumption of the rear end of the resistance device is isolated, the power consumption speed of the electronic device in a standby state is reduced, and the standby time of the power supply module is longer. The production straight-through rate of a production line is improved, and the production yield of the electronic equipment is improved. Under the use state, can guarantee the normal use and the charging of electronic equipment. The embodiment of the application has the advantage that the electronic equipment is low in loss in standby.
Drawings
Fig. 1 is a schematic structural diagram of a power module, a mode switching module, and a power management integrated module in an electronic device according to an embodiment of the present application when connected;
fig. 2 is a schematic structural diagram of a connection manner of a mode switching module in an embodiment of the present application;
fig. 3 is a schematic structural diagram of another connection manner of the mode switching module in the embodiment of the present application.
Description of reference numerals:
10. a power supply module; 20. a mode switching module; 21. a boost assembly; 22. a field effect transistor; 23. a diode; 30. a power management integration module; 40. a processor; 50. a ground terminal; 60. and (4) resistance.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/", and generally means that the former and latter related objects are in an "or" relationship.
The electronic device provided by the embodiment of the present application is described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
Referring to fig. 1 to 3, an embodiment of the present application provides an electronic device including a power module 10, a mode switching module 20, and a power management integrated module 30;
the power module 10, the mode switching module 20 and the power management integrated module 30 are electrically connected in sequence, and the mode switching module 20 is located between the power module 10 and the power management integrated module 30;
wherein, the mode switching module 20 is configured to switch the electronic device between a first mode and a second mode, in the first mode, the mode switching module 20 is in an open circuit state, and the power module 10 is disconnected from the power management integrated module 30; in the second mode, the mode switching module 20 is in a closed state, and the connection between the power module 10 and the power management integrated module 30 is conducted.
In the embodiment of the present application, the mode switching module 20 may disconnect the power module 10 and the power management integrated module 30 as required, so as to isolate power consumption of the rear end of the resistor 60, reduce power consumption speed of the electronic device in a standby state, and prolong standby time of the power module 10. Under the use state, can guarantee the normal use and the charging of electronic equipment. The embodiment of the application has the advantage that the electronic equipment is low in loss in standby.
It should be noted that the electronic device having the first mode in the present application can also prevent components in the back-end circuit from being damaged by static electricity generated in the process of pulling out the battery BTB (board-to-board connector) in the assembly stage, thereby improving the production throughput of the production line and improving the production yield of the electronic device.
It should be noted that the mode switching module 20 of the present application may be controlled by corresponding software or program, or may be controlled by a trigger type control, or by a combination of two control methods, so as to switch the mode of the electronic device. Moreover, the switching modes of the first mode and the second mode can be set differently according to requirements, such as: when the second mode is switched to the first mode, the control can be carried out through software or programs; when the first mode is switched to the second mode, the switching of the first mode to the second mode may be achieved through a trigger type control, for example, the mode switching module 20 directly or indirectly generates a high level enable under the action of an external power source, and then triggers and activates the mode switching module 20.
Optionally, in an embodiment of the present application, the electronic device further includes a processor 40, where the processor 40 is connected to the mode switching module 20, and the processor 40 is configured to control on/off of the mode switching module 20.
In the embodiment of the present application, the setting of the processor 40 may control the mode switching module 20 through a control signal. The control signal may be a corresponding enable signal. The processor 40 may also be connected to the power management integrated module 30 to facilitate control of the power management integrated module 30.
Optionally, in an embodiment of the present application, the mode switching module 20 includes a voltage boosting component 21 and a field effect transistor 22 (MOS transistor), where the voltage boosting component 21 is connected to the field effect transistor 22, and the voltage boosting component 21 is configured to control on/off between a source and a drain of the field effect transistor 22; referring to fig. 2 and 3, the three electrodes of the field effect transistor 22 are: a grid G, a source S and a drain D.
One of the source and the drain is connected to the power supply module 10, and the other is connected to the power management integrated module 30.
In the embodiment of the present application, the voltage boost component 21 is configured to control the on/off between the source and the drain of the field effect transistor 22 through the change of the voltage, so as to switch the electronic device between the first mode and the second mode. The connection mode of the source and the drain can be changed according to the requirement, wherein the drain can be connected with the power supply module 10, and the source is connected with the power management integrated module 30 (see the embodiment in fig. 2); may be configured with the source connected to the power module 10 and the drain connected to the power management integrated module 30 (see the embodiment in fig. 3).
Optionally, in an embodiment of the present application, an input terminal of the voltage boosting component 21 is connected to a source of the field effect transistor 22, and an output terminal of the voltage boosting component 21 is connected to a gate of the field effect transistor 22.
In the examples of the present application, two embodiments in the present application need to satisfy: the input end of the boosting assembly 21 is connected with the source electrode of the field effect transistor 22, and the output end of the boosting assembly 21 is connected with the grid electrode of the field effect transistor 22; the booster assembly 21 will be disposed at different positions in different embodiments.
Optionally, in an embodiment of the present application, the voltage boosting assembly 21 is connected to the processor 40 through a signal transmission line, and the processor 40 controls the voltage boosting assembly 21 through an enable signal, where the enable signal is enabled at a high level.
In the embodiment of the present application, the boosting assembly 21 can be switched under the control of the processor 40, and the processor 40, in cooperation with corresponding software or program, can change the state of the boosting assembly 21. For example, an interface window for individually controlling the enabling signals of the boosting assemblies 21 may be provided by software, and the boosting assemblies 21 may be controlled by a control click of an operator, for example, an enabling signal for turning off the boosting assemblies 21 may be sent. The enable signal activated by the voltage boost component 21 may be enabled at a high level, so that the power can be supplied from an external power source (e.g., a power-on interface of a charger, and can be charged by a charger or a household power source).
Optionally, in an embodiment of the present application, the voltage boost assembly 21 is a boost chip or a separate boost circuit.
In the embodiment of the present application, the boost chip is an integrated power converter, such as a charge pump (charge pump) or a switched capacitor DC-DC converter (switched capacitor DC-to-DC converter), and when compared with an inductance-based DC-DC switching power supply, the boost chip is also called an inductance-free DC-DC power converter. The split boost circuit is a split power converter.
Optionally, in the embodiment of the present application, after the voltage boosting assembly 21 is connected to an external power supply, the voltage boosting assembly 21 is activated, the field effect transistor 22 is turned on, and the power module 10 is in communication with the power management integration module 30;
after the voltage boosting assembly 21 is disconnected from the external power supply, the field effect transistor 22 maintains on, and the power module 10 and the power management integrated module 30 keep on communicating.
In the embodiment of the present application, the above steps may be activated by an external power supply to turn on the field effect transistor 22, so that the power module 10 and the power management integrated module 30 may be communicated to realize switching from the transportation state to the use state. After the external power source is disconnected, since the field effect transistor 22 can maintain the conducting state, the power module 10 and the power management integrated module 30 can be connected, and the using state of the electronic device can be maintained. The transport state may be turned on by the processor 40 only when the electronic device needs to be standing by again for a long time or transported over a long distance. That is, the transportation state is a state of being turned on for a short time or occasionally, and the use state is a normal state of the electronic device.
Optionally, in an embodiment of the present application, the voltage at the input end of the voltage boost component 21 is Vin, the enable level of the voltage boost component 21 is EN, the voltage at the output end of the voltage boost component 21 is Vout, the voltage of the power management integrated module 30 is Vbat, the threshold voltage of the field effect transistor 22 is Vth, and the voltage between the gate and the source of the field effect transistor 22 is Vgs;
after the voltage boost component 21 is connected to an external power supply, vin = EN = Vbat, and Vout > Vin + Vth, the power management integrated module 30 generates an activation voltage, and the voltage boost component 21 operates; at this time, vout-Vbat = Vgs > Vth, the source and the drain are turned on, and the power supply module 10 and the power management integrated module 30 are connected.
In the embodiment of the present application, the above structure describes a process of activating the sound component and conducting the source and the drain, so that it can be obtained that the boost component 21 is triggered to be activated after the external power is connected, specifically, the boost component 21 enters into a working state by generating an activation voltage by the power management integrated module 30, and the boost component 21 entering into the working state triggers the conduction of the source and the drain, so as to achieve the communication between the power module 10 and the power management integrated module 30.
It should be noted that the threshold voltage is a threshold voltage at which the MOS transistor state changes, and when the MOS transistor changes from depletion to inversion, a state where the Si surface electron concentration is equal to the hole concentration is experienced. The MOS transistor is in a critical conduction state at the moment, and the gate voltage of the MOS transistor at the moment can be defined as a threshold voltage which is one of important parameters of the MOS transistor.
Optionally, in an embodiment of the present application, a diode 23 is disposed in parallel on the source and the drain.
In the embodiment of the present application, the arrangement of the diode 23 can protect the field effect transistor 22, and can reduce conduction loss. The diode 23 may be arranged as a schottky diode. When the current flowing through the SD (gate G, source S, drain D) is too large, a part of the current can be shunted, thereby protecting the field effect transistor 22; the field effect transistor 22 of the present application may also contact the diode 23 in the field effect transistor 22 as required, and the diode integrated in the field effect transistor 22 may be referred to as a body diode, and for the occasion of high-speed switching, the body diode cannot be turned on quickly due to too low turning-on speed, and current cannot pass through, and further the MOS may be damaged, and at this time, the field effect transistor 22 of the diode 23 connected in parallel may be adopted. The body diode voltage drop is larger than that of the external parallel diode 23, and the conduction loss is larger, so that the external parallel diode 23 can reduce the conduction loss compared with the body diode.
Optionally, in the embodiment of the present application, the gate of the field effect transistor 22 is grounded, and a resistor 60 is disposed between the gate and the ground terminal 50.
In the embodiment of the present application, the resistor 60 is provided here for isolation and impedance matching between the front and rear stages of the fet 22, so that the signal can be transmitted more perfectly.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a" \8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element. Further, it should be noted that the scope of the methods and apparatus of the embodiments of the present application is not limited to performing the functions in the order illustrated or discussed, but may include performing the functions in a substantially simultaneous manner or in a reverse order based on the functions involved, e.g., the methods described may be performed in an order different than that described, and various steps may be added, omitted, or combined. In addition, features described with reference to certain examples may be combined in other examples.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. An electronic device, comprising a power module, a mode switching module and a power management integration module;
the power supply module, the mode switching module and the power supply management integrated module are electrically connected in sequence, and the mode switching module is positioned between the power supply module and the power supply management integrated module;
the mode switching module is used for switching the electronic equipment between a first mode and a second mode, and in the first mode, the mode switching module is in an open circuit state, and the power supply module is disconnected from the power supply management integrated module; in the second mode, the mode switching module is in a pass-through state, and the power supply module is connected and conducted with the power supply management integrated module;
the mode switching module comprises a boosting assembly and a field effect transistor, the boosting assembly is connected with the field effect transistor, and the boosting assembly is used for controlling the connection and disconnection between a source electrode and a drain electrode in the field effect transistor;
one of the source electrode and the drain electrode is connected with the power supply module, and the other one of the source electrode and the drain electrode is connected with the power supply management integrated module;
after the boosting assembly is connected with an external power supply, the boosting assembly is activated, the field effect transistor is conducted, and the power supply module is communicated with the power supply management integrated module;
after the boosting assembly is disconnected with an external power supply, the field effect transistor is kept connected, and the power supply module and the power supply management integrated module are communicated.
2. The electronic device of claim 1, further comprising a processor connected to the mode switching module, wherein the processor is configured to control on/off of the mode switching module.
3. The electronic device of claim 1, wherein the drain is connected to the power module and the source is connected to the power management integration module;
or the source electrode is connected with the power supply module, and the drain electrode is connected with the power supply management integrated module.
4. The electronic device of claim 1, wherein an input of the boost component is connected to a source of the field effect transistor and an output of the boost component is connected to a gate of the field effect transistor.
5. The electronic device of claim 1, wherein the boost component is a boost chip or a separate boost circuit.
6. The electronic device of claim 1, wherein the voltage at the input of the voltage boost component is Vin, the enable level of the voltage boost component is EN, the voltage at the output of the voltage boost component is Vout, the voltage of the power management integrated module is Vbat, the threshold voltage of the field effect transistor is Vth, and the voltage between the gate and the source of the field effect transistor is Vgs;
after the boosting assembly is connected with an external power supply, vin = EN = Vbat, and Vout > Vin + Vth, the power supply management integrated module generates an activation voltage, and the boosting assembly works; at this time, vout-Vbat = Vgs > Vth, the source and the drain are turned on, and the power supply module and the power management integrated module are connected.
7. The electronic device of claim 1, wherein a diode is disposed in parallel on the source and the drain.
8. The electronic device according to claim 1, wherein the gate of the field effect transistor is connected to a ground terminal, and a resistor is provided between the gate and the ground terminal.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN202110842427.6A CN113572357B (en) | 2021-07-23 | 2021-07-23 | Electronic device |
PCT/CN2022/106608 WO2023001162A1 (en) | 2021-07-23 | 2022-07-20 | Electronic device |
Applications Claiming Priority (1)
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CN202110842427.6A CN113572357B (en) | 2021-07-23 | 2021-07-23 | Electronic device |
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CN113572357A CN113572357A (en) | 2021-10-29 |
CN113572357B true CN113572357B (en) | 2022-12-27 |
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CN202110842427.6A Active CN113572357B (en) | 2021-07-23 | 2021-07-23 | Electronic device |
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CN (1) | CN113572357B (en) |
WO (1) | WO2023001162A1 (en) |
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CN113572357B (en) * | 2021-07-23 | 2022-12-27 | 维沃移动通信有限公司 | Electronic device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105988549A (en) * | 2015-01-27 | 2016-10-05 | 上海海马汽车研发有限公司 | Electronic device having very low quiescent current |
CN107394906A (en) * | 2017-08-23 | 2017-11-24 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of sensor node electric power management circuit |
CN111865277A (en) * | 2020-08-18 | 2020-10-30 | 成都天锐星通科技有限公司 | Power supply switch circuit and electric equipment |
CN211822523U (en) * | 2020-02-28 | 2020-10-30 | 杭州老板电器股份有限公司 | Smoke and stove joint control device and gas stove |
CN112886664A (en) * | 2021-02-02 | 2021-06-01 | 维沃移动通信有限公司 | Electronic device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9678556B2 (en) * | 2014-02-10 | 2017-06-13 | Qualcomm Incorporated | Dynamic clock and voltage scaling with low-latency switching |
CN105262178A (en) * | 2015-11-06 | 2016-01-20 | 来安县信隆机械科技有限公司 | Electronic equipment power circuit and electronic equipment |
EP3193436B1 (en) * | 2016-01-15 | 2019-10-30 | Nxp B.V. | Charge pump circuit driving a load connection switch |
CN107453741A (en) * | 2016-05-31 | 2017-12-08 | 展讯通信(上海)有限公司 | Metal-oxide-semiconductor drive circuit |
TWI688194B (en) * | 2019-03-08 | 2020-03-11 | 宏碁股份有限公司 | Power supply circuit |
CN113572357B (en) * | 2021-07-23 | 2022-12-27 | 维沃移动通信有限公司 | Electronic device |
-
2021
- 2021-07-23 CN CN202110842427.6A patent/CN113572357B/en active Active
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2022
- 2022-07-20 WO PCT/CN2022/106608 patent/WO2023001162A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105988549A (en) * | 2015-01-27 | 2016-10-05 | 上海海马汽车研发有限公司 | Electronic device having very low quiescent current |
CN107394906A (en) * | 2017-08-23 | 2017-11-24 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of sensor node electric power management circuit |
CN211822523U (en) * | 2020-02-28 | 2020-10-30 | 杭州老板电器股份有限公司 | Smoke and stove joint control device and gas stove |
CN111865277A (en) * | 2020-08-18 | 2020-10-30 | 成都天锐星通科技有限公司 | Power supply switch circuit and electric equipment |
CN112886664A (en) * | 2021-02-02 | 2021-06-01 | 维沃移动通信有限公司 | Electronic device |
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WO2023001162A1 (en) | 2023-01-26 |
CN113572357A (en) | 2021-10-29 |
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