CN107453741A - Metal-oxide-semiconductor drive circuit - Google Patents
Metal-oxide-semiconductor drive circuit Download PDFInfo
- Publication number
- CN107453741A CN107453741A CN201610375795.3A CN201610375795A CN107453741A CN 107453741 A CN107453741 A CN 107453741A CN 201610375795 A CN201610375795 A CN 201610375795A CN 107453741 A CN107453741 A CN 107453741A
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- CN
- China
- Prior art keywords
- voltage
- oxide
- metal
- semiconductor
- charge pump
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention provides a kind of metal-oxide-semiconductor drive circuit.The metal-oxide-semiconductor drive circuit includes charge pump, the output end of the charge pump connects the grid of the metal-oxide-semiconductor, and the drain voltage of the metal-oxide-semiconductor is first voltage, and source voltage is second voltage, the first input end of the charge pump is voltage source, and the second input is the second voltage.The present invention can meet resistance to pressure request while driving voltage demand is met, while make it that the Area comparison of metal-oxide-semiconductor is small.
Description
Technical field
The present invention relates to electronic circuit technology field, more particularly to a kind of metal-oxide-semiconductor drive circuit.
Background technology
In the electronic device of integrated circuit, metal-oxide-semiconductor has two types, and one kind is NMOS tube, and another kind of is PMOS.With
Exemplified by NMOS tube, if the voltage between grid and source electrode is more than or equal to threshold voltage, NMOS tube turns on, if grid and source electrode
Between voltage be less than threshold voltage, then NMOS tube just disconnects, using metal-oxide-semiconductor it is this conducting and disconnection characteristic, can be by metal-oxide-semiconductor
For switching.In order that NMOS tube turns on, a current potential unlatching at least higher than the current potential of source terminal for the gate terminal of NMOS tube
Voltage threshold.If it is required that load current it is larger, pressure drop amplitude is smaller, then must just increase booster circuit in addition, to carry
High NMOS grid potential, such as can be boosted using charge pump.Charge pump typically has 1 times of boosting, 1.5 times of boostings and 2
The way of output of boosting again.
Fig. 1 is the booster circuit of the NMOS tube of prior art one, and the drain voltage of NMOS tube is VIN1, and source voltage is
VIN2, charge pump are 2 times of charge pumps, and the input of charge pump is VIN1, while charge pump has enabled input EN_CP,
In practical application, VIN1 input voltage can arrive 7.2V, and after being boosted using 2 times of charge pumps, the output voltage of charge pump is
14.4V, after NMOS tube turns on, VIN2 power supply and VIN1 voltage are consistent as 7.2V, then NMOS tube VGSVoltage
For 7.2V, V in technique is not metGS<5V constraint.
Fig. 2 is the booster circuit of the NMOS tube of prior art two, and the drain voltage of NMOS tube is VIN1, and source voltage is
VIN2, charge pump are 2 times of charge pumps, and the input of charge pump is 5V voltage source LDO5V, while charge pump has enabled input
EN_CP, in actual applications, VIN1 input voltage can arrive 7.2V, after being boosted using 2 times of charge pumps, the output electricity of charge pump
Press as 10V, after NMOS tube turns on, VIN2 power supply and VIN1 voltage are consistent as 7.2V, the then VGS of NMOS tube electricity
Press as 2.8V, disclosure satisfy that VGS in technique<5V resistance to pressure request.But when VGS voltage is 2.8V, the internal resistance of NMOS tube
It is bigger, allow for NMOS dimensioned area do it is bigger.
During the present invention is realized, inventor has found following technical problem in the prior art at least be present：
For NMOS tube, when draining as in the case of high-tension, when being boosted using the charge pump in prior art one,
Resistance to pressure request can not be met, when being boosted using the charge pump in prior art two, the area of NMOS tube does bigger.
The content of the invention
A kind of metal-oxide-semiconductor drive circuit provided by the invention, pressure-resistant want can be met while driving voltage demand is met
Ask, while make it that the Area comparison of metal-oxide-semiconductor is small.
The present invention provides a kind of metal-oxide-semiconductor drive circuit, and the metal-oxide-semiconductor drive circuit includes charge pump, the charge pump
Output end connects the grid of the metal-oxide-semiconductor, and the drain voltage of the metal-oxide-semiconductor is first voltage, and source voltage is second voltage, institute
The first input end for stating charge pump is voltage source, and the second input is the second voltage.
Alternatively, the output voltage of the charge pump is the voltage source voltage and the second voltage sum.
Alternatively, the voltage source voltage is 5V.
Alternatively, the first voltage is 7.2V.
Alternatively, the charge pump is 2 times of charge pumps.
Alternatively, the charge pump is provided with an Enable Pin, when the Enable Pin is high level, the charge pump work
Make.
Alternatively, the grid voltage of the metal-oxide-semiconductor is voltage source voltage and the second voltage sum, the metal-oxide-semiconductor
Grid, source voltage VGSFor 5V.
Metal-oxide-semiconductor drive circuit provided in an embodiment of the present invention, metal-oxide-semiconductor is boosted using charge pump, charge pump it is defeated
It is a 5V voltage sources and source voltage to enter end so that the V of metal-oxide-semiconductorGS5V is remained, so as to meet driving voltage demand
Meet resistance to pressure request simultaneously, while make it that the Area comparison of metal-oxide-semiconductor is small.
Brief description of the drawings
Fig. 1 is the electrical block diagram that prior art one is metal-oxide-semiconductor boosting；
Fig. 2 is the electrical block diagram that prior art two is metal-oxide-semiconductor boosting；
Fig. 3 is the electrical block diagram that the embodiment of the present invention is metal-oxide-semiconductor boosting.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
Only it is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
The present invention provides a kind of metal-oxide-semiconductor drive circuit, as shown in figure 3, the metal-oxide-semiconductor drive circuit includes charge pump, institute
The output end for stating charge pump connects the grid of the metal-oxide-semiconductor, and the drain voltage of the metal-oxide-semiconductor is first voltage, and source voltage is
Second voltage, the first input end of the charge pump is voltage source, and the second input is the second voltage.
Metal-oxide-semiconductor drive circuit provided in an embodiment of the present invention, metal-oxide-semiconductor is boosted using charge pump, charge pump it is defeated
It is a 5V voltage sources and source voltage to enter end so that the V of metal-oxide-semiconductorGS5V is remained, so as to meet driving voltage demand
Meet resistance to pressure request simultaneously, while make it that the Area comparison of metal-oxide-semiconductor is small.
Alternatively, the output voltage of the charge pump is the voltage source voltage and the second voltage sum.
Alternatively, the voltage source voltage is 5V.
Alternatively, the first voltage is 7.2V.
Alternatively, the charge pump is 2 times of charge pumps.
Alternatively, the charge pump is provided with an Enable Pin, when the Enable Pin is high level, the charge pump work
Make.
Alternatively, the grid voltage of the metal-oxide-semiconductor is voltage source voltage and the second voltage sum, the metal-oxide-semiconductor
Grid, source voltage VGSFor 5V.
Specifically, technical solution of the present invention is realized with 2 times of charge pump architectures, and input terminal voltage is arranged into a voltage-stablizer
Voltage LDO5V and VIN2.Operation principle is as follows, and when circuit just starts to start, VIN2=0V, the output voltage of charge pump is then
LDO5V+0V, now NMOS is conducting, VIN1 can be passed on so that VIN2 gradually increases, while VIN2 increases, and electricity
The output voltage of lotus pump also raises, and a high LDO5V more constant than VIN2 voltage, final VIN2 is approximately equal to VIN1, charge pump
Output voltage LDO5V+VIN2 so that VGS5V is remained, the Area comparison of metal-oxide-semiconductor is small.Such framework meets that driving force will
While asking, solves the pressure-resistant problem of high pressure again, while the Area comparison of metal-oxide-semiconductor is small.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in, all should
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (7)
- A kind of 1. metal-oxide-semiconductor drive circuit, it is characterised in that the metal-oxide-semiconductor drive circuit includes charge pump, the charge pump it is defeated Go out the grid that end connects the metal-oxide-semiconductor, the drain voltage of the metal-oxide-semiconductor is first voltage, and source voltage is second voltage, described The first input end of charge pump is voltage source, and the second input is the second voltage.
- 2. metal-oxide-semiconductor drive circuit according to claim 1, it is characterised in that the output voltage of the charge pump is described Voltage source voltage and the second voltage sum.
- 3. metal-oxide-semiconductor drive circuit according to claim 2, it is characterised in that the voltage source voltage is 5V.
- 4. the metal-oxide-semiconductor drive circuit according to any one of claim 1-3, it is characterised in that the first voltage is 7.2V。
- 5. metal-oxide-semiconductor drive circuit according to claim 4, it is characterised in that the charge pump is 2 times of charge pumps.
- 6. metal-oxide-semiconductor drive circuit according to claim 5, it is characterised in that the charge pump is provided with an Enable Pin, when When the Enable Pin is high level, the charge pump.
- 7. metal-oxide-semiconductor drive circuit according to claim 6, it is characterised in that the grid voltage of the metal-oxide-semiconductor is voltage source Voltage and the second voltage sum, grid, the source voltage V of the metal-oxide-semiconductorGSFor 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375795.3A CN107453741A (en) | 2016-05-31 | 2016-05-31 | Metal-oxide-semiconductor drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375795.3A CN107453741A (en) | 2016-05-31 | 2016-05-31 | Metal-oxide-semiconductor drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107453741A true CN107453741A (en) | 2017-12-08 |
Family
ID=60484679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610375795.3A Pending CN107453741A (en) | 2016-05-31 | 2016-05-31 | Metal-oxide-semiconductor drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107453741A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110608573A (en) * | 2018-06-14 | 2019-12-24 | 合肥美的电冰箱有限公司 | Load drive integrated refrigerator control panel and refrigerator |
| CN111010032A (en) * | 2018-10-08 | 2020-04-14 | 圣邦微电子（北京）股份有限公司 | Four-pin load switch suitable for different input voltages |
| WO2023001162A1 (en) * | 2021-07-23 | 2023-01-26 | 维沃移动通信有限公司 | Electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594130A (en) * | 2011-01-10 | 2012-07-18 | 中兴通讯股份有限公司 | Method for outputting constant difference voltage and charge pump circuit |
| CN202364120U (en) * | 2011-10-21 | 2012-08-01 | 唐娅 | Novel voltage stabilization type drive circuit based on charge pump |
| CN104317343A (en) * | 2014-09-30 | 2015-01-28 | 山东华芯半导体有限公司 | Circuit and method for keeping constant threshold voltage of MOS (Metal Oxide Semiconductor) transistor |
| CN204131377U (en) * | 2013-06-23 | 2015-01-28 | 半导体元件工业有限责任公司 | Adaptive M OS gate driver circuit and the gate driver circuit for MOS transistor |
-
2016
- 2016-05-31 CN CN201610375795.3A patent/CN107453741A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594130A (en) * | 2011-01-10 | 2012-07-18 | 中兴通讯股份有限公司 | Method for outputting constant difference voltage and charge pump circuit |
| CN202364120U (en) * | 2011-10-21 | 2012-08-01 | 唐娅 | Novel voltage stabilization type drive circuit based on charge pump |
| CN204131377U (en) * | 2013-06-23 | 2015-01-28 | 半导体元件工业有限责任公司 | Adaptive M OS gate driver circuit and the gate driver circuit for MOS transistor |
| CN104317343A (en) * | 2014-09-30 | 2015-01-28 | 山东华芯半导体有限公司 | Circuit and method for keeping constant threshold voltage of MOS (Metal Oxide Semiconductor) transistor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110608573A (en) * | 2018-06-14 | 2019-12-24 | 合肥美的电冰箱有限公司 | Load drive integrated refrigerator control panel and refrigerator |
| CN111010032A (en) * | 2018-10-08 | 2020-04-14 | 圣邦微电子（北京）股份有限公司 | Four-pin load switch suitable for different input voltages |
| CN111010032B (en) * | 2018-10-08 | 2021-09-24 | 圣邦微电子（北京）股份有限公司 | Four-pin load switch suitable for different input voltages |
| WO2023001162A1 (en) * | 2021-07-23 | 2023-01-26 | 维沃移动通信有限公司 | Electronic device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171208 |
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| RJ01 | Rejection of invention patent application after publication |