CN104113312A - Grid voltage generating circuit - Google Patents

Grid voltage generating circuit Download PDF

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Publication number
CN104113312A
CN104113312A CN201310130958.8A CN201310130958A CN104113312A CN 104113312 A CN104113312 A CN 104113312A CN 201310130958 A CN201310130958 A CN 201310130958A CN 104113312 A CN104113312 A CN 104113312A
Authority
CN
China
Prior art keywords
voltage
transistor switch
grid
circuit
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310130958.8A
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Chinese (zh)
Inventor
张正文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Power Electronics Corp Taiwan
Original Assignee
Advanced Power Electronics Corp Taiwan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Electronics Corp Taiwan filed Critical Advanced Power Electronics Corp Taiwan
Priority to CN201310130958.8A priority Critical patent/CN104113312A/en
Publication of CN104113312A publication Critical patent/CN104113312A/en
Pending legal-status Critical Current

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Abstract

A grid voltage generating circuit is used to provide a grid voltage to a transistor switch, and comprises a first voltage generating circuit and a second voltage generating circuit. The first voltage generating circuit is used to provide a first voltage to a grid of the transistor switch, and the second voltage generating circuit is used to provide a second voltage to the grid of the transistor switch, wherein the second voltage is at least greater than a voltage needed to conduct the transistor switch, and the first voltage is greater than the second voltage.

Description

Grid voltage produces circuit
Technical field
The present invention relates to a kind of voltage generation circuit, the grid voltage that relates in particular to a kind of transistor switch produces circuit.
Background technology
Traditionally, for switching transistor switch, conventionally can couple a grid voltage supply circuit at the grid place of transistor switch, so as to supplying a high level voltage, with this transistor switch of conducting.And this grid voltage supply circuit is generally to realize with charge pump (Charge pump) circuit, so as to providing than the more voltage of high level of turn-on transistor switch required voltage, after being switched at transistor switch, continue to reduce the resistance between transistor switch drain electrode and source electrode, reduce power loss.
But, use charge pump circuit to need the specific charging interval just can reach turn-on transistor switch required voltage, for the electrical installation starting fast for present requirement, can this charging interval become electrical installation and reach the bottleneck place of plug and play.
Summary of the invention
The invention provides a kind of grid voltage and produce circuit, so that grid voltage to transistor switch to be provided.This grid voltage produces circuit and comprises that one first voltage generation circuit and a second voltage produce circuit.This first voltage generation circuit is in order to provide the grid of one first voltage to this transistor switch.And second voltage produces circuit in order to the grid of a second voltage to this transistor switch to be provided.Wherein second voltage is at least greater than this transistor switch required voltage of conducting.The first voltage is greater than second voltage.
In one embodiment, the first voltage generation circuit is a charge pump circuit.And the first voltage generation circuit also comprises one first diode.The anode tap of the first diode couples charge pump circuit, and the cathode terminal of the first diode couples the grid of transistor switch.
In one embodiment, second voltage is provided by a power supply line road.And second voltage generation circuit also comprises one second diode.The anode tap of the second diode couples second voltage, and the cathode terminal of the second diode couples the grid of transistor switch.
According to this, the second voltage that second voltage produces circuit to be provided is provided by power supply line road, therefore can directly reach turn-on transistor switch required voltage, accelerates the conducting speed of transistor switch.The first voltage generation circuit can provide the first voltage that is greater than second voltage, so as to after transistor switch conducting, continues to reduce the resistance between source electrode and drain electrode, to reduce overall power dissipation.
Brief description of the drawings
Fig. 1 produces circuit diagram for transistor switch grid voltage according to an embodiment of the invention.
Fig. 1 produces circuit detailed circuit diagram for transistor switch grid voltage according to an embodiment of the invention.
Embodiment
Below described in detail with accompanying drawing for the preferred specific embodiment of the present invention, following explanation and accompanying drawing use identical reference number to represent identical or like, and in the time being repeated in this description identical or like, give omission.
Fig. 1 produces circuit diagram for transistor switch grid voltage according to an embodiment of the invention.This grid voltage produces circuit 100 in order to the grid of one first voltage and second voltage to transistor switch 106 to be provided, and carrys out this transistor switch 106 of conducting, to provide an operating voltage Vin to system 108.Wherein grid voltage generation circuit 100 comprises one first voltage generation circuit 102, and a second voltage produces circuit 104.Wherein, the first voltage generation circuit 102 is realized with charge pump (Charge pump) circuit, so that the grid place of one first voltage V1 to transistor switch 106 to be provided.It is that the grid place of a second voltage V2 to transistor switch 106 is provided that second voltage produces 104, circuit, wherein this second voltage V2 can be a power supply line voltage that road provides one of them, and this second voltage V2 is at least greater than these transistor switch 106 required voltages of conducting.The first voltage V1 is greater than second voltage V2, with after second voltage V2 turn-on transistor switch 106, provides the grid place of a higher voltage to transistor switch 106.Taking N-type transistor switch 106 as example, after second voltage V2 turn-on transistor switch 106, then the grid voltage increasing, the first voltage V1, can make the resistance between transistor switch 106 source electrodes and drain electrode decline, and reduce power loss.
In this embodiment, the second voltage V2 providing due to second voltage generation circuit 104 is provided by power supply line road, therefore can directly reach turn-on transistor switch 106 required voltages, accelerates the conducting speed of transistor switch 106.Moreover, after transistor switch 106 conductings, provide the first voltage V1 that is greater than second voltage V2 to the grid place of transistor switch 106 by the first voltage generation circuit 102 again, so as to after transistor switch 106 conductings, continue to reduce the resistance between source electrode and drain electrode, to reduce overall power dissipation.
Fig. 2 produces circuit detailed circuit diagram for transistor switch grid voltage according to an embodiment of the invention.Grid voltage produces circuit 100 and comprises one first voltage generation circuit 102, and a second voltage produces circuit 104.The first voltage generation circuit 102 comprises a charge pump circuit 201 and one first diode 202, and the cathode terminal that wherein anode tap of the first diode 202 couples charge pump circuit 201, the first diodes 202 couples the grid of transistor switch 106.Charge pump circuit 201 is in order to produce one first voltage V1, and this first voltage V1 is sent to the grid place of transistor switch 106 by the first diode 202.Second voltage produces circuit 104 and comprises that one second diode 203, is provided the second voltage V2 of voltage by a power supply line road, and the anode tap of the second diode couples second voltage V2, and the cathode terminal of the second diode couples the grid of transistor switch 106.Second voltage V2 is sent to the grid place of transistor switch 106 by the second diode 203.The electric current that wherein can avoid second voltage V2 to produce by the first diode 202 backwashes to charge pump circuit 201.And the electric current that can avoid the first voltage V1 to produce by the second diode 203 backwashes to second voltage V2 place.
Comprehensive above-mentioned saying, the present invention provides transistor switch grid voltage with two voltage generation circuits, wherein, the second voltage that second voltage produces circuit to be provided is provided by power supply line road, therefore can directly reach turn-on transistor switch required voltage, accelerate the conducting speed of transistor switch.The first voltage generation circuit can provide the first voltage that is greater than second voltage, so as to after transistor switch conducting, continues to reduce the resistance between source electrode and drain electrode, to reduce overall power dissipation.
Although the present invention with execution mode openly as above; so it is not in order to limit the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; when doing various variations and retouching, therefore protection scope of the present invention is when being as the criterion depending on the application's the claim person of defining.

Claims (5)

1. grid voltage produces a circuit, in order to provide grid voltage to transistor switch, it is characterized in that, comprising:
The first voltage generation circuit, in order to provide the grid of the first voltage to this transistor switch; And
Second voltage produces circuit, in order to the grid of second voltage to this transistor switch to be provided,
Wherein this second voltage is at least greater than the required voltage of this transistor switch of conducting, and this first voltage is greater than this second voltage.
2. grid voltage as claimed in claim 1 produces circuit, it is characterized in that, described the first voltage generation circuit is charge pump circuit.
3. grid voltage as claimed in claim 2 produces circuit, it is characterized in that, described the first voltage generation circuit also comprises the first diode, and wherein the anode tap of this first diode couples this charge pump circuit, and the cathode terminal of this first diode couples the grid of this transistor switch.
4. grid voltage as claimed in claim 1 produces circuit, it is characterized in that, described second voltage is provided by power supply line road.
5. grid voltage as claimed in claim 4 produces circuit, it is characterized in that, described second voltage produces circuit and also comprises the second diode, and wherein the anode tap of this second diode couples this second voltage, and the cathode terminal of this second diode couples the grid of this transistor switch.
CN201310130958.8A 2013-04-16 2013-04-16 Grid voltage generating circuit Pending CN104113312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310130958.8A CN104113312A (en) 2013-04-16 2013-04-16 Grid voltage generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310130958.8A CN104113312A (en) 2013-04-16 2013-04-16 Grid voltage generating circuit

Publications (1)

Publication Number Publication Date
CN104113312A true CN104113312A (en) 2014-10-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310130958.8A Pending CN104113312A (en) 2013-04-16 2013-04-16 Grid voltage generating circuit

Country Status (1)

Country Link
CN (1) CN104113312A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393752A (en) * 2014-12-11 2015-03-04 中国电子科技集团公司第四十七研究所 Capacitive charge pump device
CN106953512A (en) * 2016-01-07 2017-07-14 台达电子工业股份有限公司 Drive circuit, converter and driving method
CN108550352A (en) * 2018-07-26 2018-09-18 京东方科技集团股份有限公司 Gate voltage control circuit, gate driving circuit and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736121A (en) * 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
TW200709263A (en) * 2005-08-24 2007-03-01 Richtek Techohnology Corp Device and method for accelerating electrical conduction of NMOS (N-channel metal-oxide semiconductor) transistor
JP2008182381A (en) * 2007-01-24 2008-08-07 Toyo Electric Mfg Co Ltd High-speed gate drive circuit
CN102055452A (en) * 2009-11-05 2011-05-11 联创汽车电子有限公司 N-type channel MOS transistor driving circuit
CN102810973A (en) * 2011-05-31 2012-12-05 三垦电气株式会社 Gate driver

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736121A (en) * 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
TW200709263A (en) * 2005-08-24 2007-03-01 Richtek Techohnology Corp Device and method for accelerating electrical conduction of NMOS (N-channel metal-oxide semiconductor) transistor
JP2008182381A (en) * 2007-01-24 2008-08-07 Toyo Electric Mfg Co Ltd High-speed gate drive circuit
CN102055452A (en) * 2009-11-05 2011-05-11 联创汽车电子有限公司 N-type channel MOS transistor driving circuit
CN102810973A (en) * 2011-05-31 2012-12-05 三垦电气株式会社 Gate driver

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393752A (en) * 2014-12-11 2015-03-04 中国电子科技集团公司第四十七研究所 Capacitive charge pump device
CN106953512A (en) * 2016-01-07 2017-07-14 台达电子工业股份有限公司 Drive circuit, converter and driving method
CN106953512B (en) * 2016-01-07 2019-05-07 台达电子工业股份有限公司 Driving circuit, converter and driving method
CN108550352A (en) * 2018-07-26 2018-09-18 京东方科技集团股份有限公司 Gate voltage control circuit, gate driving circuit and display device
CN108550352B (en) * 2018-07-26 2021-05-18 京东方科技集团股份有限公司 Grid voltage control circuit, grid driving circuit and display device

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Application publication date: 20141022

WD01 Invention patent application deemed withdrawn after publication