CN203933581U - A kind of switching circuit that solves shutdown electric leakage - Google Patents
A kind of switching circuit that solves shutdown electric leakage Download PDFInfo
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- CN203933581U CN203933581U CN201420377829.9U CN201420377829U CN203933581U CN 203933581 U CN203933581 U CN 203933581U CN 201420377829 U CN201420377829 U CN 201420377829U CN 203933581 U CN203933581 U CN 203933581U
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Abstract
The utility model discloses a kind of switching circuit that solves shutdown electric leakage, it is characterized in that, comprise resistance R 3-R5, N channel field-effect pipe Q1, P-channel field-effect transistor (PEFT) pipe Q2, for button K1 and the diode D3 that starts shooting/shut down; R4 one end, Q2 source electrode connect cell voltage VBATO, the R4 other end connects Q2 grid, Q1 drain electrode, D3 anode, Q2 drain electrode connected system supply power voltage VBAT, R3 one end connects K1 one end, D3 negative electrode, the R3 other end connects the PWRKEY pin for system switching machine, the K1 other end, Q1 source grounding; Q1 grid connects R5 one end, the GPIO1 pin of R5 other end connected system.This programme is realized the power-off between circuit system and battery by simple two MOS transistor and peripheral gadget thereof, with low cost, realizes the object that reduction system is leaked electricity, improved properties of product.
Description
Technical field
The utility model relates to electronic product field, relates in particular to a kind of switching circuit that solves shutdown electric leakage.
Background technology
Most electronic product is all not power-off, even if be that battery is also connected under electronic product shutdown situation with circuit system, even also probably very soon battery electric quantity is depleted because of system electric leakage under the state that between battery and system, not power-off meeting causes resistance product to shut down.Mobile phone for example, cell phone platform is because circuit is complicated conventionally, and system electric leakage is higher.
For this problem, existing solution is to increase disconnection/connection that toggle switch is realized battery and circuit system; Yet use toggle switch volume larger, be limited to conventionally and can be subject to product appearance or structure, be not suitable for the Miniaturization Design of the electronic products such as mobile phone, intelligent wearing equipment.
Utility model content
The purpose of this utility model is to propose a kind of switching circuit that solves shutdown electric leakage, can the electric leakage of reduction system.
For reaching this object, the utility model by the following technical solutions:
A switching circuit that solves shutdown electric leakage, comprises resistance R 3-R5, N channel field-effect pipe Q1, and P-channel field-effect transistor (PEFT) pipe Q2, for the button K1 that starts shooting/shut down, and diode D3; R4 one end, Q2 source electrode connect cell voltage VBATO, the R4 other end connects Q2 grid, Q1 drain electrode, D3 anode, Q2 drain electrode connected system supply power voltage VBAT, R3 one end connects K1 one end, D3 negative electrode, the R3 other end connects the PWRKEY pin for system switching machine, the K1 other end, Q1 source grounding; Q1 grid connects R5 one end, the GPIO1 pin of R5 other end connected system.
Wherein, also comprise diode D1, D2; D1 anodic bonding is for the PWRKEY pin of system switching machine, and D1 negative electrode connects the R3 other end, the GPIO1 pin of D2 anodic bonding system, and D2 negative electrode connects the R5 other end.
Wherein, described D1, D2 are Schottky diode.
Wherein, also comprise resistance R 1, R2; Wherein, R1 one end, R2 one end all connect the R5 other end, and the R2 other end connects USB supply power voltage VCHG, R1 other end ground connection.
Wherein, also comprise diode D4; D4 anodic bonding USB supply power voltage VCHG, D4 negative electrode connects the R2 other end.
Wherein, R1 is the resistance of 230K Ω, and R2 is the resistance of 100K Ω, and D4 is Schottky diode.
Wherein, described Q1 is NTR2101P-D field effect transistor, and Q2 is SSM3K35MFV field effect transistor, and R3 is the resistance of 1K Ω, and R4 is the resistance of 1M Ω.
The beneficial effects of the utility model are: circuit structure is simple, volume is little, by simple two MOS transistor and peripheral gadget thereof, realize the power-off between circuit system and battery; And it is low to realize cost, in the situation that not increasing too many product cost, realize the electricity leakage power dissipation of reduction system, improve properties of product.By effectively reduction system of this switching circuit, leak electricity, and then greatly extend the remaining time of battery electric quantity under electronic product off-mode; Without using toggle switch, applied widely.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, the accompanying drawing the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the circuit diagram of the switching circuit of the solution shutdown electric leakage that provides of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing of the present utility model, technical scheme in the utility model embodiment is carried out to clear, complete description, obviously, described embodiment is only a part of embodiment of the present utility model, rather than whole embodiment.Embodiment based in the utility model, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope that the utility model is protected.
As shown in Figure 1, the switching circuit of the solution shutdown electric leakage that the present embodiment provides comprises: resistance R 3-R5, and N channel field-effect pipe Q1, P-channel field-effect transistor (PEFT) pipe Q2, for the button K1 that starts shooting/shut down, and diode D3; R4 one end, Q2 source electrode connect cell voltage VBATO, the R4 other end connects Q2 grid, Q1 drain electrode, D3 anode, Q2 drain electrode connected system supply power voltage VBAT, R3 one end connects K1 one end, D3 negative electrode, the R3 other end connects the PWRKEY pin for system switching machine, the K1 other end, Q1 source grounding; Q1 grid connects R5 one end, the GPIO1 pin of R5 other end connected system.
Electronic product based on the present embodiment switching circuit, under normal circumstances, when K1 does not press, Q1 and Q2 are all in off state, during start, press K1, allow Q2 conducting, now battery can be given system power supply, because PWRKEY button is now dragged down simultaneously, system starts, and GP configuring IO1 draws high, make Q1, Q2 is conducting always.During shutdown, directly press K1, PWRKEY drags down normal shutdown, now closes GPIO1 and decontrols K1, system cut-off.
Preferably, the Q1 adopting in the present embodiment, the conducting resistance of Q2 are as far as possible little, to reduce the power consumption of Q1, Q2, also make in addition the pressure drop on Q2 as far as possible little; And the conveyance capacity of Q2 requires to bear the maximum current of related system, avoid because the conveyance capacity of Q2 burns out Q2 not; In addition, the saturation conduction voltage of Q1, Q2 need match with the concrete circuit system design of electronic product.In addition, the use of diode D3 is in order to guarantee the normal state of PWRKEY, make PWRKEY can not be subject to the impact of on-off state, switch key K1 can normally be used, press K1 start, after decontroling K1, PWRKEY can keep high level, while waiting press K1 next time, just can again be dragged down, and makes system normal shutdown.In other words, if there is no D3, under open state, PWRKEY will drag down ground connection always, and causing cannot normal shutdown.
As a preferred implementation of the present utility model, described Q1 is NTR2101P-D field effect transistor, and Q2 is SSM3K35MFV field effect transistor, and R3 resistance sizes is 1K Ω, and R4 resistance sizes is 1M Ω.
By the switching circuit of the present embodiment, make, in the situation that not increasing outside toggle switch, not changing former resistance product switching on and shutting down button operation, to realize the power-off between battery and circuit system, prevent from occurring electric leakage situation in electronic product shutdown situation.
Further, in order to prevent that electric current from pouring in down a chimney, the switching circuit of the present embodiment also comprises diode D1, D2; Wherein, D1 anodic bonding is for the PWRKEY pin of system switching machine, and D1 negative electrode connects the R3 other end, the GPIO1 pin of D2 anodic bonding system, and D2 negative electrode connects the R5 other end.Preferably, the D1 adopting in the present embodiment, D2 are the Schottky diodes of one-way conduction, and the conduction voltage drop of D1, D2 is lower, reverse leakage is low.
Further, based on said switching circuit system closedown state, be in power-off situation, for the charge mode of the electronic product platforms such as compatible mobile phone, the switching circuit of the present embodiment also comprises resistance R 1, R2; Wherein, R1 one end, R2 one end all connect the R5 other end, and the R2 other end connects USB supply power voltage VCHG, R1 other end ground connection.Increase thus the part of VCHG conducting system, and do not affected system normal switch machine.
As a preferred implementation of the present utility model, R1 resistance sizes is 230K Ω, and R2 resistance sizes is 100K Ω.
Preferably, in order to prevent that electric current from pouring in down a chimney, in the utility model embodiment, also comprise diode D4; D4 anodic bonding USB supply power voltage VCHG, D4 negative electrode connects the R2 other end.Preferably, the D4 adopting in the present embodiment is the Schottky diode of one-way conduction, and the conduction voltage drop of D4 is lower, reverse leakage is low.
It should be noted that, above-mentioned component parameter, is only a preferred implementation of the present utility model, and the utility model can also have other execution mode, such as, field effect transistor Q1, Q2 can select other model; For different applied environments, person of an ordinary skill in the technical field, according to common practise, without creative work, can adjust component parameter.
The switching circuit of the utility model above-described embodiment, simple in structure, volume is little, by simple two MOS transistor and peripheral gadget thereof, realizes the power-off between circuit system and battery; And it is low to realize cost, in the situation that not increasing too many product cost, realize the electricity leakage power dissipation of reduction system, improve properties of product.By this switching circuit, can avoid using toggle switch, but also can reach the effect of system cut-off, effectively reduction system is leaked electricity (electric leakage is less than 1uA) simultaneously, then greatly extends the remaining time of battery electric quantity under electronic product off-mode.
Finally it should be noted that: above embodiment is only for the technical solution of the utility model is described but not be limited, although the utility model is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that: it still can be modified or be equal to replacement the technical solution of the utility model, and these modifications or be equal to replacement and also can not make amended technical scheme depart from the spirit and scope of technical solutions of the utility model.
Claims (7)
1. a switching circuit that solves shutdown electric leakage, is characterized in that, comprises resistance R 3-R5, N channel field-effect pipe Q1, and P-channel field-effect transistor (PEFT) pipe Q2, for the button K1 that starts shooting/shut down, and diode D3; R4 one end, Q2 source electrode connect cell voltage VBATO, the R4 other end connects Q2 grid, Q1 drain electrode, D3 anode, Q2 drain electrode connected system supply power voltage VBAT, R3 one end connects K1 one end, D3 negative electrode, the R3 other end connects the PWRKEY pin for system switching machine, the K1 other end, Q1 source grounding; Q1 grid connects R5 one end, the GPIO1 pin of R5 other end connected system.
2. the switching circuit of solution shutdown electric leakage according to claim 1, is characterized in that, also comprises diode D1, D2; Wherein, D1 anodic bonding is for the PWRKEY pin of system switching machine, and D1 negative electrode connects the R3 other end, the GPIO1 pin of D2 anodic bonding system, and D2 negative electrode connects the R5 other end.
3. the switching circuit of solution shutdown electric leakage according to claim 2, is characterized in that, described D1, D2 are Schottky diode.
4. the switching circuit of solution shutdown electric leakage according to claim 2, is characterized in that, also comprises resistance R 1, R2; Wherein, R1 one end, R2 one end all connect the R5 other end, and the R2 other end connects USB supply power voltage VCHG, R1 other end ground connection.
5. the switching circuit of solution shutdown electric leakage according to claim 4, is characterized in that, also comprises diode D4; D4 anodic bonding USB supply power voltage VCHG, D4 negative electrode connects the R2 other end.
6. the switching circuit of solution shutdown electric leakage according to claim 5, is characterized in that, R1 is the resistance of 230K Ω, and R2 is the resistance of 100K Ω, and D4 is Schottky diode.
7. the switching circuit of solution shutdown electric leakage according to claim 1, is characterized in that, described Q1 is NTR2101P-D field effect transistor, and Q2 is SSM3K35MFV field effect transistor, and R3 is the resistance of 1K Ω, and R4 is the resistance of 1M Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420377829.9U CN203933581U (en) | 2014-07-09 | 2014-07-09 | A kind of switching circuit that solves shutdown electric leakage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420377829.9U CN203933581U (en) | 2014-07-09 | 2014-07-09 | A kind of switching circuit that solves shutdown electric leakage |
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| CN203933581U true CN203933581U (en) | 2014-11-05 |
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| CN201420377829.9U Active CN203933581U (en) | 2014-07-09 | 2014-07-09 | A kind of switching circuit that solves shutdown electric leakage |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505720A (en) * | 2016-11-15 | 2017-03-15 | 深圳天珑无线科技有限公司 | A kind of on-off circuit and terminal unit for solving shutdown electric leakage |
| CN113783274A (en) * | 2021-09-24 | 2021-12-10 | 合肥国轩高科动力能源有限公司 | Power supply designed based on battery utilization in echelon |
-
2014
- 2014-07-09 CN CN201420377829.9U patent/CN203933581U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505720A (en) * | 2016-11-15 | 2017-03-15 | 深圳天珑无线科技有限公司 | A kind of on-off circuit and terminal unit for solving shutdown electric leakage |
| CN113783274A (en) * | 2021-09-24 | 2021-12-10 | 合肥国轩高科动力能源有限公司 | Power supply designed based on battery utilization in echelon |
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