WO2022270294A1 - Multilayer substrate, multilayer substrate module, and electronic device - Google Patents

Multilayer substrate, multilayer substrate module, and electronic device Download PDF

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Publication number
WO2022270294A1
WO2022270294A1 PCT/JP2022/022909 JP2022022909W WO2022270294A1 WO 2022270294 A1 WO2022270294 A1 WO 2022270294A1 JP 2022022909 W JP2022022909 W JP 2022022909W WO 2022270294 A1 WO2022270294 A1 WO 2022270294A1
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WO
WIPO (PCT)
Prior art keywords
conductor layer
multilayer substrate
cavity
signal conductor
vertical direction
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PCT/JP2022/022909
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French (fr)
Japanese (ja)
Inventor
敬一 市川
恒亮 西尾
Original Assignee
株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN202290000213.2U priority Critical patent/CN219981140U/en
Publication of WO2022270294A1 publication Critical patent/WO2022270294A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits

Definitions

  • the present invention relates to a multilayer substrate having a structure in which a plurality of insulator layers are laminated.
  • the high-frequency signal line described in Patent Document 1 includes a laminate, a signal line, a first reference conductor, a second reference conductor, an interlayer connection conductor, and an external terminal.
  • the laminate has a structure in which a plurality of dielectric sheets are vertically laminated.
  • the signal line is provided inside the laminate.
  • a first reference conductor is positioned above the signal line.
  • a second reference conductor is located below the signal line.
  • the external terminals are located on the upper main surface of the laminate. The external terminals are connected to signal lines via interlayer connection conductors.
  • the signal line and the external terminal are connected by an interlayer connection conductor. At locations where such interlayer connection conductors exist, the characteristic impedance generated in the high-frequency signal transmission path is likely to fluctuate.
  • an object of the present invention is to provide a multilayer substrate, a multilayer substrate module, and an electronic device capable of adjusting the characteristic impedance of a portion where an interlayer connection conductor connecting a first signal conductor layer and a second signal conductor layer exists.
  • a multilayer substrate comprises One of the upward direction and the downward direction is the first direction, the other of the upward direction and the downward direction is the second direction,
  • a multilayer board is a laminate having a structure in which a plurality of insulator layers are stacked vertically; a first signal conductor layer provided in the laminate; A second signal conductor layer provided in the laminate and located in the second direction from the first signal conductor layer, the overlapping portion overlapping the first signal conductor layer when viewed in the vertical direction a second signal conductor layer comprising provided in the laminate, overlapping the overlapping portion when viewed in the vertical direction, and penetrating the insulating layer in the vertical direction to form the first signal conductor layer and the second signal conductor layer; an interlayer connection conductor in contact with the signal conductor layer; a first reference conductor layer provided in the laminate, positioned in the second direction from the second signal conductor layer, and overlapping at least a portion of the overlapping portion when viewed in the vertical direction; , and A high frequency signal is transmitted
  • the multilayer substrate of the present invention it is possible to adjust the characteristic impedance at the location where the interlayer connection conductor connecting the first signal conductor layer and the second signal conductor layer exists.
  • FIG. 1 is an exploded perspective view of a multilayer substrate 10.
  • FIG. FIG. 2 is a cross-sectional view of the right end portion of the multilayer substrate 10.
  • FIG. 3 is a top view of the right end portion of the multilayer substrate 10.
  • FIG. 4 is a rear view of the internal structure of the electronic device 1 including the multilayer substrate 10.
  • FIG. 5 is a cross-sectional view of the right end portion of the multilayer substrate 10a.
  • FIG. 6 is a cross-sectional view orthogonal to the left-right direction of the multilayer substrate 10a.
  • FIG. 7 is a cross-sectional view orthogonal to the horizontal direction of the multilayer substrate 10b.
  • FIG. 8 is a cross-sectional view of the right end portion of the multilayer substrate 10c.
  • FIG. 9 is a cross-sectional view of the multilayer board module 200.
  • FIG. 10 is a cross-sectional view of the multilayer board module 200a.
  • FIG. 11 is a cross-sectional view of the multilayer substrate 10d.
  • FIG. 12 is a top view of the multilayer substrate 10e. In FIG. 12, the multilayer substrate 10e is seen through.
  • FIG. 13 is a cross-sectional view of the multilayer substrate 10e.
  • FIG. 14 is a cross-sectional view of the multilayer substrate 10f.
  • FIG. 15 is a cross-sectional view of the multilayer substrate 10g.
  • FIG. 16 is a cross-sectional view of the multilayer substrate 10h.
  • FIG. 17 is a top view of the multilayer substrate 10i.
  • FIG. 18 is a top view of the multilayer substrate 10j.
  • FIG. 19 is a cross-sectional view of the multilayer substrate 10k.
  • FIG. 20 is a top view of the multilayer substrate 10k.
  • FIG. 21 is an equivalent circuit diagram near the interlayer connection conductor v4.
  • FIG. 22 is a cross-sectional view of the multilayer substrate 10l.
  • FIG. 23 is a cross-sectional view of the multilayer substrate 10m.
  • FIG. 24 is a cross-sectional view of the multilayer substrate 10n.
  • FIG. 25 is a cross-sectional view of the multilayer substrate 10o.
  • FIG. 1 is an exploded perspective view of a multilayer substrate 10.
  • FIG. 1 only representative interlayer connection conductors v1 and v2 among the plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 are denoted by reference numerals.
  • FIG. 2 is a cross-sectional view of the right end portion of the multilayer substrate 10.
  • FIG. 3 is a top view of the right end portion of the multilayer substrate 10.
  • the multilayer substrate 10 is seen through.
  • the stacking direction of the laminate 12 of the multilayer substrate 10 is defined as the vertical direction.
  • One of the upward direction and the downward direction is the first direction.
  • the other of the upward direction and the downward direction is the second direction.
  • the first direction is upward.
  • the second direction is downward.
  • the first direction may be downward.
  • the second direction may be upward.
  • the direction in which the signal conductor layer 22 of the multilayer substrate 10 extends is defined as the left-right direction.
  • the line width direction of the signal conductor layer 22 is defined as the front-rear direction.
  • the up-down direction is perpendicular to the front-rear direction.
  • the left-right direction is orthogonal to the up-down direction and the front-rear direction. Note that the vertical direction, the horizontal direction, and the front-rear direction in the present embodiment do not have to match the vertical direction, the horizontal direction, and the front-rear direction when the multilayer substrate 10 is used.
  • X is a part or member of the multilayer substrate 10.
  • each part of X is defined as follows.
  • front of X is meant the front half of X.
  • Back of X means the back half of X.
  • the left part of X means the left half of X.
  • the right part of X means the right half of X.
  • Top of X means the top half of X.
  • the lower part of X means the lower half of X.
  • the leading edge of X means the leading edge of X.
  • the trailing end of X means the trailing end of X.
  • the left end of X means the end of X in the left direction.
  • the right end of X means the end of X in the right direction.
  • the upper end of X means the end of X in the upward direction.
  • the lower end of X means the lower end of X.
  • the front end of X means the front end of X and its vicinity.
  • the rear end of X means the rear end of X and its vicinity.
  • the left end of X means the left end of X and its vicinity.
  • the right end of X means the right end of X and its vicinity.
  • the upper end of X means the upper end of X and its vicinity.
  • the lower end of X means the lower end of X and its vicinity.
  • the multilayer substrate 10 transmits high frequency signals.
  • a multilayer substrate 10 is used to electrically connect two circuits in an electronic device such as a smart phone.
  • the multilayer substrate 10 includes a laminate 12, protective layers 18a and 18b, a signal conductor layer 22 (second signal conductor layer), a second reference conductor layer 24, a first reference conductor layer 26, signal electrodes 28a, a signal electrode 28b (first signal conductor layer), a plurality of interlayer connection conductors v1, a plurality of interlayer connection conductors v2, and interlayer connection conductors v3 and v4.
  • the laminate 12 has a plate shape. Therefore, the laminate 12 has an upper major surface (first major surface) and a lower major surface (second major surface).
  • the upper main surface (first main surface) of the laminate 12 is located above (first direction) the lower main surface (second main surface) of the laminate 12 .
  • the upper principal surface and the lower principal surface of the laminate 12 have a rectangular shape with long sides extending in the left-right direction. Therefore, the length of the laminate 12 in the left-right direction is longer than the length of the laminate 12 in the front-rear direction.
  • the laminate 12 has a structure in which insulator layers 16a to 16c are laminated vertically.
  • the insulator layers 16a-16c are arranged in this order from top to bottom.
  • the insulator layers 16a to 16c have the same rectangular shape as the laminate 12 when viewed in the vertical direction.
  • the insulator layers 16a-16c are flexible dielectric sheets.
  • the material of the insulator layers 16a to 16c is, for example, thermoplastic resin.
  • Thermoplastic resins are, for example, thermoplastic resins such as liquid crystal polymer and PTFE (polytetrafluoroethylene).
  • the material of the insulator layers 16a-16c may be polyimide.
  • the signal electrode 28 a is provided on the laminate 12 .
  • the signal electrode 28 a is located on the upper main surface of the laminate 12 . More specifically, the signal electrode 28a is located at the left end of the upper major surface of the insulator layer 16a.
  • the signal electrode 28a has a rectangular shape when viewed in the vertical direction. A high-frequency signal is input/output to/from the signal electrode 28a.
  • the signal electrode 28 b (first signal conductor layer) is provided on the laminate 12 .
  • the signal electrode 28 b (first signal conductor layer) is located on the upper main surface of the laminate 12 . More specifically, the signal electrode 28b is located at the right end of the upper major surface of the insulator layer 16a.
  • the signal electrode 28b has a rectangular shape when viewed in the vertical direction. A high-frequency signal is input/output to/from the signal electrode 28b (first signal conductor layer).
  • the signal conductor layer 22 (second signal conductor layer) is provided on the laminate 12 as shown in FIG.
  • the signal conductor layer 22 (second signal conductor layer) is positioned below (second direction) the signal electrodes 28a and 28b (first signal conductor layer).
  • the signal conductor layer 22 is located on the upper main surface of the insulator layer 16b. Thereby, the signal conductor layer 22 is provided within the laminate 12 .
  • the signal conductor layer 22 has a linear shape.
  • the signal conductor layer 22 extends in the left-right direction.
  • the signal conductor layer 22 is positioned at the center of the upper main surface of the insulator layer 16b in the front-rear direction.
  • the signal conductor layer 22 overlaps the signal electrode 28a when viewed in the vertical direction.
  • the right end portion of the signal conductor layer 22 overlaps the signal electrode 28b when viewed in the vertical direction. Therefore, the signal conductor layer 22 includes a linear portion 22a, an overlapping portion 22b and an overlapping portion 22c.
  • the linear portion 22a is a portion that does not overlap the signal electrodes 28a and 28b when viewed in the vertical direction.
  • the linear portion 22a has a linear shape.
  • the linear portion 22a extends in the left-right direction.
  • the overlapping portion 22b is a portion that overlaps with the signal electrode 28a when viewed in the vertical direction.
  • the overlapping portion 22b is connected to the left end of the linear portion 22a.
  • the overlapping portion 22c is a portion that overlaps with the signal electrode 28b (first signal conductor layer) when viewed in the vertical direction.
  • the overlapping portion 22c is connected to the right end of the linear portion 22a.
  • the overlapping portions 22b and 22c have a circular shape when viewed in the vertical direction.
  • the longitudinal width of the overlapping portion 22b and the longitudinal width of the overlapping portion 22c are larger than the longitudinal width of the linear portion 22a.
  • the interlayer connection conductor v3 is provided on the laminated body 12 .
  • the interlayer connection conductor v3 overlaps the overlapping portion 22b when viewed in the vertical direction.
  • the interlayer connection conductor v3 is in contact with the signal electrode 28a and the signal conductor layer 22 by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28a and the signal conductor layer 22 are electrically connected.
  • the interlayer connection conductor v4 is provided in the laminate 12.
  • the interlayer connection conductor v4 overlaps the overlapping portion 22c when viewed in the vertical direction.
  • the interlayer connection conductor v4 is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected.
  • a high-frequency signal is transmitted to the signal electrode 28a, the signal electrode 28b (first signal conductor layer), the signal conductor layer 22 (second signal conductor layer), and the interlayer connection conductors v3 and v4 as described above.
  • the second reference conductor layer 24 is provided on the laminate 12 .
  • the second reference conductor layer 24 is positioned above (first direction) the signal conductor layer 22 (second signal conductor layer).
  • the second reference conductor layer 24 is located on the upper main surface of the insulator layer 16a.
  • the second reference conductor layer 24 covers substantially the entire upper main surface of the insulator layer 16a.
  • the second reference conductor layer 24 overlaps the signal conductor layer 22 when viewed in the vertical direction. However, the second reference conductor layer 24 is not in contact with the signal electrodes 28a and 28b.
  • a reference potential is connected to the second reference conductor layer 24 .
  • the reference potential is, for example, the ground potential.
  • the first reference conductor layer 26 is provided on the laminate 12 .
  • the first reference conductor layer 26 is positioned below (second direction) the signal conductor layer 22 (second signal conductor layer).
  • the first reference conductor layer 26 is located on the lower main surface of the insulator layer 16c.
  • the first reference conductor layer 26 covers substantially the entire lower main surface of the insulator layer 16c.
  • the first reference conductor layer 26 overlaps the signal conductor layer 22 when viewed in the vertical direction.
  • the first reference conductor layer 26 overlaps at least part of the overlapping portions 22b and 22c when viewed in the vertical direction.
  • a reference potential is connected to the first reference conductor layer 26 .
  • the reference potential is, for example, the ground potential.
  • the signal conductor layer 22, the second reference conductor layer 24, and the first reference conductor layer 26 as described above have a stripline structure.
  • a plurality of interlayer connection conductors v1 and a plurality of interlayer connection conductors v2 are provided in the laminate 12 .
  • a plurality of interlayer connection conductors v1 and v2 electrically connect the second reference conductor layer 24 and the first reference conductor layer 26 . More specifically, the plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 vertically pass through the insulator layers 16a to 16c.
  • the plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 are in contact with the second reference conductor layer 24 and the first reference conductor layer 26, respectively.
  • a plurality of interlayer connection conductors v1 are positioned in front of the signal conductor layer 22 .
  • the plurality of interlayer connection conductors v1 are arranged in a row at regular intervals in the horizontal direction.
  • a plurality of interlayer connection conductors v2 are positioned behind the signal conductor layer 22 .
  • the plurality of interlayer connection conductors v2 are arranged in a row at regular intervals in the horizontal direction.
  • the signal conductor layer 22, the second reference conductor layer 24, the first reference conductor layer 26, and the signal electrodes 28a and 28b as described above are provided, for example, on the upper main surface or the lower main surface of the insulator layers 16a to 16c. It is formed by etching a metal foil.
  • the metal foil is, for example, copper foil.
  • the interlayer connection conductors v1 to v4 are, for example, via-hole conductors.
  • the via-hole conductors are produced by forming through-holes in the insulating layers 16a to 16c, filling the through-holes with a conductive paste, and sintering the conductive paste.
  • the interlayer connection conductors v1 to v4 may be, for example, through-hole conductors. Through-hole conductors are produced by forming through-holes penetrating all or part of the insulator layers 16a to 16c and plating the through-holes.
  • the protective layer 18 a is laminated on the second reference conductor layer 24 . Therefore, the protective layer 18a is the uppermost insulating layer in the multilayer substrate 10. As shown in FIG. The protective layer 18 a covers substantially the entire second reference conductor layer 24 . However, openings ha to hf are provided in the protective layer 18a. The openings ha to hc are provided at the left end of the protective layer 18a. The openings hb, ha, hc are arranged in this order from front to back. The openings hd to hf are provided at the right end of the protective layer 18a. The openings he, hd, and hf are arranged in this order from front to back.
  • At least portions of the signal electrodes 28a and 28b are exposed to the outside from the multilayer substrate 10 through the openings ha and hd, respectively.
  • a portion of the second reference conductor layer 24 is exposed outside from the multilayer substrate 10 through the openings hb, hc, he, and hf.
  • the protective layer 18b is laminated under the first reference conductor layer 26. Therefore, the protective layer 18b is the lowest insulating layer in the multilayer substrate 10. As shown in FIG. The protective layer 18 b covers substantially the entire first reference conductor layer 26 .
  • the protective layers 18 a and 18 b as described above are not part of the laminate 12 .
  • the material of the protective layers 18a, 18b is different from the material of the insulator layers 16a-16c. In particular, the material of each protective layer 18a, 18b is different from the material of the adjacent insulator layers 16a, 16c.
  • the protective layers 18a and 18b are resist layers.
  • the protective layers 18a and 18b may be formed by attaching a resin sheet to the upper main surface of the insulating layer 16a and the lower main surface of the insulating layer 16c, or a liquid resin may be applied to the insulating layer. It may be formed by coating the upper main surface 16a and the lower main surface of the insulator layer 16c and solidifying.
  • the laminate 12 is provided with a first cavity Sp1 in which the insulator layers 16a to 16c do not exist.
  • the first cavity Sp1 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first reference conductor layer 26 in the vertical direction.
  • the first cavity Sp1 has a hemispherical shape, as shown in FIG.
  • the first cavity Sp1 protrudes upward from the lower main surface of the insulator layer 16c.
  • the upper end of the first cavity Sp1 is positioned between the upper main surface of the insulator layer 16b and the lower main surface of the insulator layer 16b.
  • the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction.
  • the first cavity Sp1 overlaps the entire interlayer connection conductor v4 when viewed in the vertical direction.
  • the first cavity Sp1 overlaps at least a portion of the overlapping portion 22c when viewed in the vertical direction.
  • the first cavity Sp1 overlaps the entire overlapping portion 22c when viewed in the vertical direction.
  • the first cavity Sp1 overlaps the right end of the linear portion 22a when viewed in the vertical direction.
  • the overlapping area of the first cavity Sp1 and the overlapping portion 22c is larger than the overlapping area of the first cavity Sp1 and the linear portion 22a.
  • the laminate 12 is provided with a first cavity Sp11 in which the insulator layers 16a to 16c do not exist.
  • the first cavity Sp11 has a structure that is symmetrical to the first cavity Sp1, so description thereof will be omitted.
  • one or more through holes h1 are provided in the first reference conductor layer 26 so as to penetrate the first reference conductor layer 26 in the vertical direction.
  • One or more through holes h1 are connected to the first cavity Sp1.
  • the number of one or more through-holes h1 is one.
  • the through hole h1 has a circular shape when viewed in the vertical direction.
  • the diameter of the through hole h1 is smaller than the diameter of the first cavity Sp1 and the diameter of the overlapping portion 22c.
  • the through hole h1 is located at the center of the first cavity Sp1 and the center of the overlapping portion 22c when viewed in the vertical direction.
  • the through hole h1 is positioned inside the outer edge of the first cavity Sp1 when viewed in the vertical direction. Further, the through hole h1 is positioned inside the outer edge of the overlapping portion 22c when viewed in the vertical direction. The through hole h1 overlaps the interlayer connection conductor v4 when viewed in the vertical direction.
  • the first reference conductor layer 26 is provided with a through hole (not shown) connected to the first cavity Sp11.
  • this through-hole has a structure symmetrical to the through-hole h1, the explanation is omitted.
  • the formation of the first cavity Sp1 will be described.
  • the portion of the insulator layer 16c adjacent to the through hole h1 is removed. Thereby, the first cavity Sp1 is formed.
  • FIG. 4 is a rear view of the internal structure of the electronic device 1 including the multilayer substrate 10.
  • the electronic device 1 is, for example, a mobile wireless communication terminal.
  • the electronic device 1 is, for example, a smart phone.
  • the multilayer substrate 10 includes a first section A2 and second sections A1 and A3.
  • the first section A2 is a section where the multilayer substrate 10 is bent.
  • the second sections A1 and A3 are sections in which the multilayer substrate 10 is not bent. That is, the distance rate radius of the first section A2 is smaller than the curvature radii of the second sections A1 and A3. Therefore, the multilayer substrate 10 may be bent in the second sections A1 and A3 as well.
  • the bending of the multilayer substrate 10 means that the multilayer substrate 10 receives an external force and deforms.
  • the deformation may be plastic deformation, elastic deformation, or both plastic deformation and elastic deformation.
  • the x-axis, y-axis, and z-axis in the electronic device 1 are defined as follows.
  • the x-axis is the horizontal direction in the second section A1.
  • the y-axis is the front-rear direction in the second section A1.
  • the z-axis is the vertical direction in the second section A1.
  • the second section A1, the first section A2, and the second section A3 are arranged in this order in the positive direction of the x-axis.
  • the first section A2 is bent with respect to the second section A1 in the z-axis direction (vertical direction in the second section A1). Therefore, the vertical direction and the front-rear direction differ depending on the position of the multilayer substrate 10, as shown in FIG.
  • the second section A1 for example, position (1)
  • the first section A2 for example, position (2)
  • the vertical direction and the horizontal direction do not match the z-axis direction and the x-axis direction, respectively.
  • the electronic device 1 includes a multilayer board 10, connectors 32a, 32b, 102a, 102b, and circuit boards 500, 510, as shown in FIG.
  • the circuit boards 500, 510 have a plate shape.
  • the circuit board 500 has main surfaces S105 and S106.
  • the main surface S105 is located on the negative direction side of the z-axis from the main surface S106.
  • the circuit board 510 has main surfaces S111 and S112.
  • the main surface S111 is located on the negative direction side of the z-axis from the main surface S112.
  • the circuit boards 500 and 510 include wiring conductor layers, reference conductor layers, electrodes, etc., which are not shown.
  • Each of the connectors 32a and 32b is mounted on the main surface (upper main surface) of the second section A1 and the second section A3 on the positive direction side of the z-axis. More specifically, the connector 32a is mounted on the signal electrode 28a and the second reference conductor layer 24. As shown in FIG. A connector 32 b is mounted on the signal electrode 28 b and the second reference conductor layer 24 .
  • the connectors 102a and 102b are mounted on the main surface S105 of the circuit board 500 and the main surface S111 of the circuit board 510, respectively.
  • Connectors 102a and 102b are connected to connectors 32a and 32b, respectively.
  • the multilayer board 10 electrically connects the circuit board 500 and the circuit board 510 .
  • the characteristic impedance of the portion where the interlayer connection conductor v4 connecting the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) is present can be adjusted. More specifically, in the multilayer substrate 10, the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps the signal conductor layer 22 (second signal conductor layer) in the vertical direction. It is located between the first reference conductor layer 26 . As a result, the dielectric constant between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is lowered.
  • the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
  • the characteristic impedance at the location where the interlayer connection conductor v4 connecting the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) is present becomes high.
  • the characteristic impedance of the portion where the interlayer connection conductor v4 that connects the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) exists can be adjusted. .
  • the thickness of the multilayer substrate 10 can be reduced. More specifically, in the multilayer substrate 10, the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps the signal conductor layer 22 (second signal conductor layer) in the vertical direction. It is located between the first reference conductor layer 26 . As a result, the dielectric constant between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is lowered. That is, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
  • the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected is The capacitance with the first reference conductor layer 26 does not become too large. As a result, according to the multilayer substrate 10, the thickness of the multilayer substrate 10 can be reduced.
  • the first cavity Sp1 can be easily formed. More specifically, the first reference conductor layer 26 is provided with one or more through holes h ⁇ b>1 penetrating through the first reference conductor layer 26 in the vertical direction. As a result, the insulating layer 16c is etched using the first reference conductor layer 26 as a mask, thereby removing the portion of the insulating layer 16c adjacent to the through hole h1. Thereby, the first cavity Sp1 connected to the through hole h1 can be formed. Thus, according to the multilayer substrate 10, the first cavity Sp1 can be easily formed using the through hole h1.
  • multilayer substrate 10 high shielding properties for the signal conductor layer 22 can be obtained. More specifically, multilayer substrate 10 includes a second reference conductor layer 24 positioned above signal conductor layer 22 and a first reference conductor layer 26 positioned below signal conductor layer 22 . Therefore, the signal conductor layer 22, the second reference conductor layer 24 and the first reference conductor layer 26 have a stripline structure. Thereby, the signal conductor layer 22 is shielded by the second reference conductor layer 24 and the first reference conductor layer 26 . Therefore, according to the multilayer substrate 10, a high shielding property for the signal conductor layer 22 can be obtained. Furthermore, since the through hole h1 is smaller than the first cavity Sp1 when viewed in the vertical direction, the first reference conductor layer 26 has high shielding properties.
  • the multilayer substrate 10 since the material of the insulator layers 16a to 16c is thermoplastic resin, the multilayer substrate 10 can be easily plastically deformed. Therefore, it is easy to maintain the bent state of the multilayer substrate 10 .
  • the plastic deformation of the multilayer substrate 10 facilitates the arrangement of the multilayer substrate 10 along the narrow space formed in the electronic device.
  • FIG. 5 is a cross-sectional view of the right end portion of the multilayer substrate 10a.
  • FIG. 6 is a cross-sectional view orthogonal to the left-right direction of the multilayer substrate 10a.
  • the multilayer substrate 10a differs from the multilayer substrate 10 in that the signal conductor layer 22 and the first reference conductor layer 26 have a microstrip line structure. More specifically, in the multilayer substrate 10a, the second reference conductor layer 24 does not overlap the signal conductor layer 22 when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10a is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer substrate 10a can have the same effect as the multi-layer substrate 10. FIG.
  • FIG. 7 is a cross-sectional view orthogonal to the horizontal direction of the multilayer substrate 10b.
  • FIG. 5 is used for the cross-sectional view of the right end portion of the multilayer substrate 10b.
  • the multilayer substrate 10b differs from the multilayer substrate 10a in that it further includes reference conductor layers 23a and 23b.
  • the reference conductor layers 23a and 23b are located on the upper main surface of the insulator layer 16b.
  • the reference conductor layer 23 a is positioned in front of the signal conductor layer 22 .
  • the reference conductor layer 23b is positioned behind the signal conductor layer 22.
  • the reference conductor layers 23 a and 23 b extend along the signal conductor layer 22 .
  • the signal conductor layer 22 and the reference conductor layers 23a and 23b have a coplanar structure.
  • the first reference conductor layer 26 is connected to the reference conductor layers 23a and 23b via interlayer connection conductors (not shown).
  • the rest of the structure of the multilayer substrate 10b is the same as that of the multilayer substrate 10a, so the description is omitted.
  • the multilayer substrate 10b can have the same effect as the multilayer substrate 10a.
  • FIG. 8 is a cross-sectional view of the multilayer substrate 10c.
  • the multilayer substrate 10c differs from the multilayer substrate 10 in that the second cavity Sp2 is provided in the laminate 12. More specifically, the multi-layer board 10c includes a signal conductor layer 25. As shown in FIG. The signal conductor layer 25 is located on the upper main surface of the insulator layer 16a. The signal conductor layer 25 extends in the left-right direction. The left end portion of the signal conductor layer 25 overlaps the right end portion of the signal conductor layer 22 when viewed in the vertical direction. Further, the interlayer connection conductor v4 is in contact with the signal conductor layer 25 (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a.
  • the laminate 12 further includes an insulator layer 16d.
  • the insulator layer 16d is laminated on the insulator layer 16a.
  • the second reference conductor layer 24 is located on the upper main surface of the insulator layer 16d. Thereby, the second reference conductor layer 24 is positioned above (in the first direction) the signal conductor layer 25 (first signal conductor layer).
  • the second reference conductor layer 24 overlaps at least a portion of the overlapping portion 22c when viewed in the vertical direction.
  • the laminate 12 is provided with a second cavity Sp2 in which the insulator layers 16a to 16d do not exist.
  • the second cavity Sp2 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and is between the signal conductor layer 25 (first signal conductor layer) and the second reference conductor layer 24 in the vertical direction. positioned.
  • the second reference conductor layer 24 is provided with one or more through holes h2 penetrating through the second reference conductor layer 24 in the vertical direction.
  • One or more through holes h2 are connected to the second cavity Sp2.
  • the number of one or more through-holes h2 is one.
  • the through hole h2 has a circular shape when viewed in the vertical direction.
  • the diameter of the through hole h2 is smaller than the diameter of the second cavity Sp2 and the diameter of the overlapping portion 22c.
  • the through hole h2 is positioned at the center of the second cavity Sp2 and the center of the overlapping portion 22c when viewed in the vertical direction. Thereby, the through hole h2 is positioned inside the outer edge of the second cavity Sp2 when viewed in the vertical direction.
  • the through hole h2 is located inside the outer edge of the overlapping portion 22c when viewed in the vertical direction.
  • the through hole h2 overlaps the interlayer connection conductor v4 when viewed in the vertical direction.
  • the rest of the structure of the multilayer substrate 10c is the same as that of the multilayer substrate 10, so description thereof will be omitted. According to the multilayer substrate 10c, the same effects as those of the multilayer substrate 10 can be obtained.
  • the second cavity Sp2 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps with the signal conductor layer 25 (first signal conductor layer) in the vertical direction. It is located between the second reference conductor layer 24 and the second reference conductor layer 24 . As a result, the dielectric constant between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is lowered.
  • the capacitance between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is reduced.
  • the distance between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is reduced.
  • the capacitance with the second reference conductor layer 24 does not become too large.
  • FIG. 9 is a cross-sectional view of the multilayer board module 200. As shown in FIG.
  • the multilayer board module 200 includes a multilayer board 10 (first multilayer board) and a multilayer board 110 (second multilayer board).
  • the multilayer substrate 110 has a vertically symmetrical structure with the multilayer substrate 10 . Therefore, the structures of the multilayer substrate 110 are given reference numerals obtained by adding 100 to the reference numerals of the structures of the multilayer substrate 10 .
  • the multilayer substrate 110 is positioned above the multilayer substrate 10 .
  • the right end portion of the multilayer substrate 10 overlaps the left end portion of the multilayer substrate 110 when viewed in the vertical direction.
  • the signal electrode 28b (first signal conductor layer) of the multilayer substrate 10 (first multilayer substrate) is fixed to the signal electrode 128b (first signal conductor layer) of the multilayer substrate 110 (second multilayer substrate) with a conductive bonding material 300.
  • the conductive bonding material 300 is, for example, solder or a conductive adhesive.
  • the first cavities Sp1 and Sp101 overlap the conductive bonding material 300 when viewed in the vertical direction.
  • the thickness of the multilayer board module 200 can be reduced. More specifically, it is difficult to reduce the thickness of the portion where the multilayer substrate 10 and the multilayer substrate 110 are connected because the conductive bonding material 300 exists. Therefore, as already explained, thinning of the multilayer substrates 10 and 110 is attempted. Multilayer substrates 10 and 110 are connected to each other at portions where multilayer substrates 10 and 110 are thinned. As a result, the thickness of the portion where the multilayer substrate 10 and the multilayer substrate 110 are connected can be reduced. As a result, according to the multilayer board module 200, the thickness of the multilayer board module 200 can be reduced.
  • FIG. 10 is a cross-sectional view of the multilayer board module 200a.
  • the multilayer board module 200a differs from the multilayer board module 200 in that the first cavity Sp101 is not provided in the multilayer board 110.
  • the rest of the structure of the multilayer board module 200a is the same as that of the multilayer board module 200, so the description is omitted.
  • the multi-layer board module 200a can have the same effects as the multi-layer board module 200. FIG.
  • FIG. 11 is a cross-sectional view of the multilayer substrate 10d.
  • the multilayer substrate 10d differs from the multilayer substrate 10 in that the laminate 12 has a first area A11 and a second area A12.
  • the first area A11 is located to the right of the second area A12.
  • the first area A11 and the second area A12 are adjacent to each other.
  • the bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12.
  • the bending stiffness can be measured, for example, by the amount of deformation of each of the first area A11 and the second area A12 when the same force is applied to each of the first area A11 and the second area A12.
  • the insulator layers 16a to 16e are stacked vertically.
  • Insulator layers 16a to 16c are stacked vertically in the second region A12.
  • the size of the first area A11 in the vertical direction is larger than the size of the second area A12 in the vertical direction.
  • the bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12.
  • the first cavity Sp1 is located in the first region A11.
  • the rest of the structure of the multilayer substrate 10d is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer substrate 10d can have the same effect as the multi-layer substrate 10.
  • the bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12. Therefore, even if the first cavity Sp1 is located in the first region A11, it is easy to ensure sufficient bending rigidity of the first region A11. Further, since the first region A11 is difficult to deform, the first cavity Sp1 is also difficult to deform.
  • FIG. 12 is a top view of the multilayer substrate 10e.
  • the multilayer substrate 10e is seen through.
  • FIG. 13 is a cross-sectional view of the multilayer substrate 10e.
  • the multilayer substrate 10e differs from the multilayer substrate 10 in the structure of the signal electrodes 28b.
  • the overlapping portion 22c is connected to the right end of the linear portion 22a.
  • the signal electrode 28b has a rectangular shape with long sides extending in the front-rear direction.
  • the interlayer connection conductor v4 overlaps the rear portion of the signal electrode 28b when viewed in the vertical direction.
  • the interlayer connection conductor v4 is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected.
  • the laminate 12 is provided with a third cavity Sp3 in which the insulator layers 16a to 16c do not exist.
  • the third cavity Sp3 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first reference conductor layer 26 in the vertical direction.
  • the third cavity Sp3 is positioned between the signal electrode 28b (first signal conductor layer) and the first reference conductor layer 26 in the vertical direction.
  • the third cavity Sp3 does not overlap the interlayer connection conductor when viewed in the vertical direction.
  • the third cavity Sp3 partially overlaps the signal electrode 28b when viewed in the vertical direction.
  • the rest of the structure of the multilayer substrate 10e is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multilayer substrate 10 e can have the same effect as the multilayer substrate 10 .
  • first cavity Sp1 and the third cavity Sp3 may be connected.
  • the third cavity Sp3 does not overlap the interlayer connection conductor when viewed in the vertical direction.
  • FIG. 14 is a cross-sectional view of the multilayer substrate 10f.
  • the multilayer substrate 10f differs from the multilayer substrate 10 in the size of the first cavity Sp1.
  • the first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10.
  • the first cavity Sp1 is in contact with the signal conductor layer 22 (second conductor layer). More precisely, the upper end of the first cavity Sp1 is in contact with the overlapping portion 22c.
  • the rest of the structure of the multilayer substrate 10f is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10f can have the same effect as the multi-layer board 10. FIG.
  • the first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
  • FIG. 15 is a cross-sectional view of the multilayer substrate 10g.
  • the multilayer substrate 10g differs from the multilayer substrate 10 in the size of the first cavity Sp1.
  • the first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10.
  • FIG. Thereby, the first cavity Sp1 is in contact with the interlayer connection conductor v4. More precisely, the upper end of the first cavity Sp1 is positioned above the overlapping portion 22c. As a result, the lower end of the interlayer connection conductor v4 is located in the first cavity Sp1.
  • the rest of the structure of the multilayer substrate 10g is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10g can have the same effect as the multi-layer board 10.
  • the first cavity Sp1 of the multilayer substrate 10g is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
  • FIG. 16 is a cross-sectional view of the multilayer substrate 10h.
  • the multilayer substrate 10h differs from the multilayer substrate 10 in the size of the first cavity Sp1.
  • the first cavity Sp ⁇ b>1 of the multilayer substrate 10 h is larger than the first cavity Sp ⁇ b>1 of the multilayer substrate 10 .
  • the first cavity Sp1 is in contact with the signal electrode 28b.
  • the rest of the structure of the multilayer substrate 10h is the same as that of the multilayer substrate 10, so the explanation is omitted.
  • the multi-layer board 10h can have the same effect as the multi-layer board 10. FIG.
  • the first cavity Sp1 of the multilayer substrate 10h is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
  • FIG. 17 is a top view of the multilayer substrate 10i. In FIG. 17, the multilayer substrate 10i is seen through.
  • the multilayer substrate 10i differs from the multilayer substrate 10 in the number of through holes h1a to h1d.
  • the multilayer substrate 10i has a plurality of through holes h1a to h1d connected to the first cavity Sp1.
  • the number of through holes h1a to h1d is four.
  • each area of the through holes h1a to h1d is smaller than the area of the through hole h1.
  • the first cavity Sp1 has a shape in which four circles centered on the through holes h1a to h1d are superimposed when viewed in the vertical direction.
  • the rest of the structure of the multilayer substrate 10i is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multilayer substrate 10i can have the same effect as the multilayer substrate 10.
  • the number of through holes h1a to h1d connected to the first cavity Sp1 is plural. Accordingly, when viewed in the vertical direction, each area of the through holes h1a to h1d may be smaller than the area of the through hole h1. As a result, leakage of the electromagnetic field to the outside of the multilayer substrate 10i through the through holes h1a to h1d is suppressed.
  • FIG. 18 is a top view of the multilayer substrate 10j. In FIG. 18, the multilayer substrate 10j is seen through.
  • the multilayer substrate 10j differs from the multilayer substrate 10 in the shape of the through hole h1 and the shape of the first cavity Sp1.
  • the through hole h1 has an oval shape extending in the horizontal direction when viewed in the vertical direction.
  • the first cavity Sp1 has an oval shape extending in the horizontal direction when viewed in the vertical direction.
  • the rest of the structure of the multilayer substrate 10j is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multilayer substrate 10j can have the same effect as the multilayer substrate 10. FIG.
  • the oval first cavity Sp1 can be formed.
  • FIG. 19 is a cross-sectional view of the multilayer substrate 10k.
  • FIG. 20 is a top view of the multilayer substrate 10k. In FIG. 20, the multilayer substrate 10k is seen through.
  • FIG. 21 is an equivalent circuit diagram near the interlayer connection conductor v4.
  • the multilayer substrate 10k differs from the multilayer substrate 10 in the position of the first cavity Sp1 and the shape of the first cavity Sp1. More specifically, the first cavity Sp1 has an oval shape extending in the horizontal direction when viewed in the vertical direction. In addition, the center of the first cavity Sp1 is positioned to the left of the overlapping portion 22c when viewed in the vertical direction. As a result, the first cavity Sp1 overlaps the overlapping portion 22c and the linear portion 22a when viewed in the vertical direction. When viewed in the vertical direction, the length in the left-right direction of the region where the first cavity Sp1 and the linear portion 22a overlap is shorter than the length in the left-right direction of the overlap between the first cavity Sp1 and the overlapping portion 22c. .
  • the capacitance between the right end of the linear portion 22a and the first reference conductor layer 26 is reduced. That is, the linear portion 22a functions as an inductor L, as shown in FIG.
  • the capacitance between the overlapping portion 22c that does not overlap with the first cavity Sp1 and the first reference conductor layer 26 increases. That is, the portion of the overlapping portion 22c that does not overlap with the first cavity Sp1 and the first reference conductor layer 26 function as a capacitor C, as shown in FIG.
  • a low-pass filter is formed from the above.
  • the rest of the structure of the multilayer substrate 10k is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10k can have the same effect as the multi-layer board 10.
  • the multilayer substrate 10k it is possible to form a low-pass filter depending on the position of the first cavity Sp1 and the shape of the first cavity Sp1. Therefore, noise can be reduced in the multilayer substrate 10k.
  • the right end portion of the signal conductor layer 22 can function as the inductor L without reducing the line width of the right end portion of the signal conductor layer 22 . Therefore, an increase in the DC resistance value of the signal conductor layer 22 can be suppressed.
  • the portion of the signal conductor layer 22 located to the right of the interlayer connection conductor v4 functions as an open stub.
  • FIG. 22 is a cross-sectional view of the multilayer substrate 10l.
  • the multilayer substrate 10l differs from the multilayer substrate 10 in that the plurality of insulator layers further includes an insulator layer 19 (first insulator layer).
  • the insulator layer 19 (first insulator layer) is positioned between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1.
  • the insulator layer 19 is positioned between the insulator layer 16b and the insulator layer 16c.
  • the insulator layer 19 overlaps the first cavity Sp1 when viewed in the vertical direction.
  • Such an insulator layer 19 is an adhesive layer that bonds the insulator layer 16b and the insulator layer 16c.
  • the material of insulator layer 19 (first insulator layer) is more difficult to etch than the material of the remaining insulator layers 16a-16c.
  • the first cavity Sp1 is located below the insulator layer 19 and not above the insulator layer 19 .
  • the insulator layer 19 may also be positioned between the insulator layers 16a and 16b.
  • the rest of the structure of the multilayer substrate 10l is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10l can have the same effect as the multi-layer board 10. FIG.
  • the insulator layer 19 (first insulator layer) is located between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1.
  • the material of insulator layer 19 (first insulator layer) is more difficult to etch than the material of the remaining insulator layers 16a-16c.
  • the first cavity Sp ⁇ b>1 is not formed in the insulator layer 19 .
  • the material of the insulator layer 19 is, for example, Teflon (registered trademark) which is difficult to be etched by chemicals.
  • FIG. 23 is a cross-sectional view of the multilayer substrate 10m.
  • the multilayer substrate 10m differs from the multilayer substrate 10 in that it further includes a dummy conductor layer 60.
  • the dummy conductor layer 60 is located between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1.
  • the insulator layer 16d is laminated between the insulator layers 16b and 16c.
  • the dummy conductor layer 60 is located on the lower main surface of the insulator layer 16d.
  • the dummy conductor layer 60 overlaps the first cavity Sp1 when viewed in the vertical direction.
  • the dummy conductor layer 60 is not connected to reference potential or signal potential. Therefore, the potential of the dummy conductor layer 60 is a floating potential.
  • the rest of the structure of the multilayer substrate 10m is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10m can have the same effect as the multi-layer board 10. FIG.
  • the dummy conductor layer 60 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1.
  • the dummy conductor layer 60 is hardly etched. Accordingly, the first cavity Sp1 is not formed above the dummy conductor layer 60. As shown in FIG. As a result, manufacturing variations of the first cavity Sp1 are suppressed.
  • the dummy conductor layer 60 overlaps the interlayer connection conductor v4 when viewed in the vertical direction.
  • FIG. 24 is a cross-sectional view of the multilayer substrate 10n.
  • the multilayer substrate 10n differs from the multilayer substrate 10 in that the protective layer 18b is provided with a through hole h50.
  • the through hole h50 vertically penetrates the protective layer 18b.
  • the through hole h50 overlaps the through hole h1 and the first cavity Sp1 when viewed in the vertical direction. Thereby, the through hole h50 is connected to the through hole h1 and the first cavity Sp1.
  • the rest of the structure of the multilayer substrate 10n is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multi-layer board 10n can have the same effects as the multi-layer board 10.
  • the air in the first cavity Sp1 expands due to heat, the air can exit the first cavity Sp1 through the through holes h1 and h50. This suppresses the separation of the first reference conductor layer 26 from the insulator layer 16c.
  • FIG. 25 is a cross-sectional view of the multilayer substrate 10o.
  • the multilayer substrate 10o differs from the multilayer substrate 10 in the material of the protective layer 18b.
  • the material of the protective layer 18b is a porous material having air permeability.
  • the rest of the structure of the multilayer substrate 10o is the same as that of the multilayer substrate 10, so the description is omitted.
  • the multilayer substrate 10 o can have the same effects as the multilayer substrate 10 .
  • the air in the first cavity Sp1 expands due to heat, the air can exit the first cavity Sp1 through the protective layer 18b having air permeability. This suppresses the separation of the first reference conductor layer 26 from the insulator layer 16c. In addition, entry of foreign matter into the first cavity Sp1 is suppressed.
  • the transmission line according to the present invention is not limited to the multilayer substrates 10, 10a to 10o, and can be modified within the scope of the subject matter.
  • the structures of the multilayer substrates 10, 10a to 10o may be combined arbitrarily.
  • the second reference conductor layer 24 is not an essential component in the multilayer substrates 10, 10a to 10o.
  • the first signal conductor layer may be a conductor layer through which high frequency signals are transmitted. Therefore, the first signal conductor layer may be the signal electrode 28b having a rectangular shape, or the signal conductor layer 25 having a linear shape. Also, the first signal conductor layer may be, for example, a small conductor layer disposed between two vertically aligned interlayer connection conductors.
  • the frequency of the high-frequency signal is, for example, 10 MHz or higher.
  • the first cavity Sp1 may partially overlap the interlayer connection conductor v1 or may overlap the entire interlayer connection conductor v1 when viewed in the vertical direction.
  • the first cavity Sp1 may be located in the second region A12. In this case, the thickness of the second region A12 can be reduced.
  • the thickness of the multilayer board 10 in the vertical direction may be smaller than the thickness of the multilayer board 110 in the vertical direction.
  • the thickness of the multilayer substrate 110 can be reduced.
  • protective layers 18a and 18b are not essential constituent elements.
  • the material of the insulator layers 16a to 16c may be resin other than thermoplastic resin, or may be ceramic.
  • the multilayer substrate 10e may further include interlayer connection conductors.
  • An interlayer connection conductor is provided in the laminate 12 .
  • the interlayer connection conductor overlaps the front portion of the overlapping portion 22c when viewed in the vertical direction.
  • the interlayer connection conductor is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected.
  • the third cavity Sp3 overlaps at least a portion of the interlayer connection conductor when viewed in the vertical direction.
  • the third cavity Sp3 may overlap the entire interlayer connection conductor when viewed in the vertical direction.
  • the laminate 12 may be provided with a plurality of third cavities Sp3 that do not overlap the interlayer connection conductors.
  • the third cavity Sp3 may be positioned between the signal electrode 28b or the signal conductor layer 22 and the first reference conductor layer 26 in the vertical direction.

Abstract

The present invention is a multilayer substrate. A second signal conductor layer is positioned in a second direction as compared to a first signal conductor layer, and includes an overlap part that overlaps with the first signal conductor layer as viewed in the vertical direction. An interlayer connection conductor overlaps with the overlap part as viewed in the vertical direction, and is in contact with the first and second signal conductor layers. A first reference conductor layer is positioned in the second direction as compared to the second signal conductor layer, and overlaps with at least a portion of the overlap part as viewed in the vertical direction. A first cavity overlaps with at least a portion of the interlayer connection conductor as viewed in the vertical direction, and is positioned between the second signal conductor layer and the first reference conductor layer in the vertical direction.

Description

多層基板、多層基板モジュール及び電子機器Multilayer substrates, multilayer substrate modules and electronic devices
 本発明は、複数の絶縁体層が積層された構造を有する多層基板に関する。 The present invention relates to a multilayer substrate having a structure in which a plurality of insulator layers are laminated.
 従来の多層基板に関する発明としては、例えば、特許文献1に記載の高周波信号線路が知られている。この高周波信号線路では、積層体、信号線路、第1リファレンス導体、第2リファレンス導体、層間接続導体及び外部端子を備えている。積層体は、複数の誘電体シートが上下方向に積層された構造を有している。信号線路は、積層体の内部に設けられている。第1リファレンス導体は、信号線路の上に位置している。第2リファレンス導体は、信号線路の下に位置している。これにより、信号線路、第1リファレンス導体及び第2リファレンス導体は、ストリップライン構造を有している。外部端子は、積層体の上主面に位置している。外部端子は、層間接続導体を介して信号線路と接続されている。 As an invention related to conventional multilayer substrates, for example, the high-frequency signal line described in Patent Document 1 is known. This high-frequency signal line includes a laminate, a signal line, a first reference conductor, a second reference conductor, an interlayer connection conductor, and an external terminal. The laminate has a structure in which a plurality of dielectric sheets are vertically laminated. The signal line is provided inside the laminate. A first reference conductor is positioned above the signal line. A second reference conductor is located below the signal line. Thereby, the signal line, the first reference conductor and the second reference conductor have a stripline structure. The external terminals are located on the upper main surface of the laminate. The external terminals are connected to signal lines via interlayer connection conductors.
特許第5477422号公報Japanese Patent No. 5477422
 ところで、特許文献1に記載の高周波信号線路では、前記の通り、信号線路と外部端子とが層間接続導体により接続されている。このような層間接続導体が存在する箇所では、高周波信号の伝達経路に発生する特性インピーダンスが変動しやすい。 By the way, in the high-frequency signal line described in Patent Document 1, as described above, the signal line and the external terminal are connected by an interlayer connection conductor. At locations where such interlayer connection conductors exist, the characteristic impedance generated in the high-frequency signal transmission path is likely to fluctuate.
 そこで、本発明の目的は、第1信号導体層と第2信号導体層とを接続する層間接続導体が存在する箇所の特性インピーダンスを調整できる多層基板、多層基板モジュール及び電子機器を提供することである。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a multilayer substrate, a multilayer substrate module, and an electronic device capable of adjusting the characteristic impedance of a portion where an interlayer connection conductor connecting a first signal conductor layer and a second signal conductor layer exists. be.
 本発明の一形態に係る多層基板は、
 上方向又は下方向の一方が第1方向であり、上方向又は下方向の他方が第2方向であり、
 多層基板は、
 複数の絶縁体層が上下方向に積層された構造を有している積層体と、
 前記積層体に設けられている第1信号導体層と、
 前記積層体に設けられており、前記第1信号導体層より前記第2方向に位置している第2信号導体層であって、上下方向に見て、前記第1信号導体層と重なる重複部分を含んでいる第2信号導体層と、
 前記積層体に設けられており、かつ、上下方向に見て、前記重複部分と重なっており、かつ、前記絶縁体層を上下方向に貫通することにより、前記第1信号導体層及び前記第2信号導体層に接触している層間接続導体と、
 前記積層体に設けられており、かつ、前記第2信号導体層より前記第2方向に位置し、かつ、上下方向に見て、前記重複部分の少なくとも一部分と重なっている第1リファレンス導体層と、
 を備えており、
 前記第1信号導体層、前記第2信号導体層及び前記層間接続導体には、高周波信号が伝送され、
 前記積層体には、前記絶縁体層が存在しない第1空洞が設けられており、
 前記第1空洞は、上下方向に見て、前記層間接続導体の少なくとも一部分と重なり、かつ、上下方向において、前記第2信号導体層と前記第1リファレンス導体層との間に位置している。
A multilayer substrate according to one aspect of the present invention comprises
One of the upward direction and the downward direction is the first direction, the other of the upward direction and the downward direction is the second direction,
A multilayer board is
a laminate having a structure in which a plurality of insulator layers are stacked vertically;
a first signal conductor layer provided in the laminate;
A second signal conductor layer provided in the laminate and located in the second direction from the first signal conductor layer, the overlapping portion overlapping the first signal conductor layer when viewed in the vertical direction a second signal conductor layer comprising
provided in the laminate, overlapping the overlapping portion when viewed in the vertical direction, and penetrating the insulating layer in the vertical direction to form the first signal conductor layer and the second signal conductor layer; an interlayer connection conductor in contact with the signal conductor layer;
a first reference conductor layer provided in the laminate, positioned in the second direction from the second signal conductor layer, and overlapping at least a portion of the overlapping portion when viewed in the vertical direction; ,
and
A high frequency signal is transmitted to the first signal conductor layer, the second signal conductor layer and the interlayer connection conductor,
The laminate is provided with a first cavity in which the insulator layer does not exist,
The first cavity overlaps at least a portion of the interlayer connection conductor when viewed in the vertical direction, and is positioned between the second signal conductor layer and the first reference conductor layer in the vertical direction.
 本発明に係る多層基板によれば、第1信号導体層と第2信号導体層とを接続する層間接続導体が存在する箇所の特性インピーダンスを調整できる。 According to the multilayer substrate of the present invention, it is possible to adjust the characteristic impedance at the location where the interlayer connection conductor connecting the first signal conductor layer and the second signal conductor layer exists.
図1は、多層基板10の分解斜視図である。FIG. 1 is an exploded perspective view of a multilayer substrate 10. FIG. 図2は、多層基板10の右端部の断面図である。FIG. 2 is a cross-sectional view of the right end portion of the multilayer substrate 10. As shown in FIG. 図3は、多層基板10の右端部の上面図である。FIG. 3 is a top view of the right end portion of the multilayer substrate 10. FIG. 図4は、多層基板10を備える電子機器1の内部構造の背面図である。FIG. 4 is a rear view of the internal structure of the electronic device 1 including the multilayer substrate 10. FIG. 図5は、多層基板10aの右端部の断面図である。FIG. 5 is a cross-sectional view of the right end portion of the multilayer substrate 10a. 図6は、多層基板10aの左右方向に直交する断面図である。FIG. 6 is a cross-sectional view orthogonal to the left-right direction of the multilayer substrate 10a. 図7は、多層基板10bの左右方向に直交する断面図である。FIG. 7 is a cross-sectional view orthogonal to the horizontal direction of the multilayer substrate 10b. 図8は、多層基板10cの右端部の断面図である。FIG. 8 is a cross-sectional view of the right end portion of the multilayer substrate 10c. 図9は、多層基板モジュール200の断面図である。FIG. 9 is a cross-sectional view of the multilayer board module 200. As shown in FIG. 図10は、多層基板モジュール200aの断面図である。FIG. 10 is a cross-sectional view of the multilayer board module 200a. 図11は、多層基板10dの断面図である。FIG. 11 is a cross-sectional view of the multilayer substrate 10d. 図12は、多層基板10eの上面図である。図12では、多層基板10eを透視した。FIG. 12 is a top view of the multilayer substrate 10e. In FIG. 12, the multilayer substrate 10e is seen through. 図13は、多層基板10eの断面図である。FIG. 13 is a cross-sectional view of the multilayer substrate 10e. 図14は、多層基板10fの断面図である。FIG. 14 is a cross-sectional view of the multilayer substrate 10f. 図15は、多層基板10gの断面図である。FIG. 15 is a cross-sectional view of the multilayer substrate 10g. 図16は、多層基板10hの断面図である。FIG. 16 is a cross-sectional view of the multilayer substrate 10h. 図17は、多層基板10iの上面図である。FIG. 17 is a top view of the multilayer substrate 10i. 図18は、多層基板10jの上面図である。FIG. 18 is a top view of the multilayer substrate 10j. 図19は、多層基板10kの断面図である。FIG. 19 is a cross-sectional view of the multilayer substrate 10k. 図20は、多層基板10kの上面図である。FIG. 20 is a top view of the multilayer substrate 10k. 図21は、層間接続導体v4近傍の等価回路図である。FIG. 21 is an equivalent circuit diagram near the interlayer connection conductor v4. 図22は、多層基板10lの断面図である。FIG. 22 is a cross-sectional view of the multilayer substrate 10l. 図23は、多層基板10mの断面図である。FIG. 23 is a cross-sectional view of the multilayer substrate 10m. 図24は、多層基板10nの断面図である。FIG. 24 is a cross-sectional view of the multilayer substrate 10n. 図25は、多層基板10oの断面図である。FIG. 25 is a cross-sectional view of the multilayer substrate 10o.
(実施形態)
[多層基板の構造]
 以下に、本発明の実施形態に係る多層基板10の構造について図面を参照しながら説明する。図1は、多層基板10の分解斜視図である。なお、図1では、複数の層間接続導体v1及び複数の層間接続導体v2の内の代表的な層間接続導体v1,v2にのみ参照符号を付した。図2は、多層基板10の右端部の断面図である。図3は、多層基板10の右端部の上面図である。図3では、多層基板10を透視した。
(embodiment)
[Structure of multilayer substrate]
The structure of the multilayer substrate 10 according to the embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an exploded perspective view of a multilayer substrate 10. FIG. In FIG. 1, only representative interlayer connection conductors v1 and v2 among the plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 are denoted by reference numerals. FIG. 2 is a cross-sectional view of the right end portion of the multilayer substrate 10. As shown in FIG. FIG. 3 is a top view of the right end portion of the multilayer substrate 10. FIG. In FIG. 3, the multilayer substrate 10 is seen through.
 本明細書において、方向を以下のように定義する。多層基板10の積層体12の積層方向を上下方向と定義する。上方向又は下方向の一方が第1方向である。上方向又は下方向の他方が第2方向である。本実施形態では、第1方向は上方向である。第2方向は下方向である。ただし、第1方向は下方向であってもよい。第2方向は上方向であってもよい。また、多層基板10の信号導体層22が延びている方向を左右方向と定義する。また、信号導体層22の線幅方向を前後方向と定義する。上下方向は、前後方向に直交する。左右方向は、上下方向及び前後方向に直交する。なお、本実施形態における上下方向、左右方向、前後方向は、多層基板10の使用時の上下方向、左右方向及び前後方向と一致していなくてもよい。 In this specification, directions are defined as follows. The stacking direction of the laminate 12 of the multilayer substrate 10 is defined as the vertical direction. One of the upward direction and the downward direction is the first direction. The other of the upward direction and the downward direction is the second direction. In this embodiment, the first direction is upward. The second direction is downward. However, the first direction may be downward. The second direction may be upward. Also, the direction in which the signal conductor layer 22 of the multilayer substrate 10 extends is defined as the left-right direction. Further, the line width direction of the signal conductor layer 22 is defined as the front-rear direction. The up-down direction is perpendicular to the front-rear direction. The left-right direction is orthogonal to the up-down direction and the front-rear direction. Note that the vertical direction, the horizontal direction, and the front-rear direction in the present embodiment do not have to match the vertical direction, the horizontal direction, and the front-rear direction when the multilayer substrate 10 is used.
 以下では、Xは、多層基板10の部品又は部材である。本明細書において、特に断りのない場合には、Xの各部について以下のように定義する。Xの前部とは、Xの前半分を意味する。Xの後部とは、Xの後半分を意味する。Xの左部とは、Xの左半分を意味する。Xの右部とは、Xの右半分を意味する。Xの上部とは、Xの上半分を意味する。Xの下部とは、Xの下半分を意味する。Xの前端とは、Xの前方向の端を意味する。Xの後端とは、Xの後方向の端を意味する。Xの左端とは、Xの左方向の端を意味する。Xの右端とは、Xの右方向の端を意味する。Xの上端とは、Xの上方向の端を意味する。Xの下端とは、Xの下方向の端を意味する。Xの前端部とは、Xの前端及びその近傍を意味する。Xの後端部とは、Xの後端及びその近傍を意味する。Xの左端部とは、Xの左端及びその近傍を意味する。Xの右端部とは、Xの右端及びその近傍を意味する。Xの上端部とは、Xの上端及びその近傍を意味する。Xの下端部とは、Xの下端及びその近傍を意味する。 In the following, X is a part or member of the multilayer substrate 10. In this specification, unless otherwise specified, each part of X is defined as follows. By front of X is meant the front half of X. Back of X means the back half of X. The left part of X means the left half of X. The right part of X means the right half of X. Top of X means the top half of X. The lower part of X means the lower half of X. The leading edge of X means the leading edge of X. The trailing end of X means the trailing end of X. The left end of X means the end of X in the left direction. The right end of X means the end of X in the right direction. The upper end of X means the end of X in the upward direction. The lower end of X means the lower end of X. The front end of X means the front end of X and its vicinity. The rear end of X means the rear end of X and its vicinity. The left end of X means the left end of X and its vicinity. The right end of X means the right end of X and its vicinity. The upper end of X means the upper end of X and its vicinity. The lower end of X means the lower end of X and its vicinity.
 まず、図1を参照しながら、多層基板10の構造について説明する。多層基板10は、高周波信号を伝送する。多層基板10は、スマートフォン等の電子機器において、2つの回路を電気的に接続するために用いられる。多層基板10は、図1に示すように、積層体12、保護層18a,18b、信号導体層22(第2信号導体層)、第2リファレンス導体層24、第1リファレンス導体層26、信号電極28a、信号電極28b(第1信号導体層)、複数の層間接続導体v1、複数の層間接続導体v2及び層間接続導体v3,v4を備えている。 First, the structure of the multilayer substrate 10 will be described with reference to FIG. The multilayer substrate 10 transmits high frequency signals. A multilayer substrate 10 is used to electrically connect two circuits in an electronic device such as a smart phone. As shown in FIG. 1, the multilayer substrate 10 includes a laminate 12, protective layers 18a and 18b, a signal conductor layer 22 (second signal conductor layer), a second reference conductor layer 24, a first reference conductor layer 26, signal electrodes 28a, a signal electrode 28b (first signal conductor layer), a plurality of interlayer connection conductors v1, a plurality of interlayer connection conductors v2, and interlayer connection conductors v3 and v4.
 積層体12は、板形状を有している。従って、積層体12は、上主面(第1主面)及び下主面(第2主面)を有している。積層体12の上主面(第1主面)は、積層体12の下主面(第2主面)より上(第1方向)に位置している。積層体12の上主面及び下主面は、左右方向に延びる長辺を有する長方形状を有している。従って、積層体12の左右方向の長さは、積層体12の前後方向の長さより長い。 The laminate 12 has a plate shape. Therefore, the laminate 12 has an upper major surface (first major surface) and a lower major surface (second major surface). The upper main surface (first main surface) of the laminate 12 is located above (first direction) the lower main surface (second main surface) of the laminate 12 . The upper principal surface and the lower principal surface of the laminate 12 have a rectangular shape with long sides extending in the left-right direction. Therefore, the length of the laminate 12 in the left-right direction is longer than the length of the laminate 12 in the front-rear direction.
 積層体12は、図1に示すように、絶縁体層16a~16cが上下方向に積層された構造を有している。絶縁体層16a~16cは、上から下へとこの順に並んでいる。絶縁体層16a~16cは、上下方向に見て、積層体12と同じ長方形状を有している。絶縁体層16a~16cは、可撓性を有する誘電体シートである。絶縁体層16a~16cの材料は、例えば、熱可塑性樹脂である。熱可塑性樹脂は、例えば、液晶ポリマー、PTFE(ポリテトラフロオロエチレン)等の熱可塑性樹脂である。絶縁体層16a~16cの材料は、ポリイミドであってもよい。 As shown in FIG. 1, the laminate 12 has a structure in which insulator layers 16a to 16c are laminated vertically. The insulator layers 16a-16c are arranged in this order from top to bottom. The insulator layers 16a to 16c have the same rectangular shape as the laminate 12 when viewed in the vertical direction. The insulator layers 16a-16c are flexible dielectric sheets. The material of the insulator layers 16a to 16c is, for example, thermoplastic resin. Thermoplastic resins are, for example, thermoplastic resins such as liquid crystal polymer and PTFE (polytetrafluoroethylene). The material of the insulator layers 16a-16c may be polyimide.
 信号電極28aは、積層体12に設けられている。本実施形態では、信号電極28aは、積層体12の上主面に位置している。より詳細には、信号電極28aは、絶縁体層16aの上主面の左端部に位置している。信号電極28aは、上下方向に見て、長方形状を有している。信号電極28aには、高周波信号が入出力する。 The signal electrode 28 a is provided on the laminate 12 . In this embodiment, the signal electrode 28 a is located on the upper main surface of the laminate 12 . More specifically, the signal electrode 28a is located at the left end of the upper major surface of the insulator layer 16a. The signal electrode 28a has a rectangular shape when viewed in the vertical direction. A high-frequency signal is input/output to/from the signal electrode 28a.
 信号電極28b(第1信号導体層)は、積層体12に設けられている。本実施形態では、信号電極28b(第1信号導体層)は、積層体12の上主面に位置している。より詳細には、信号電極28bは、絶縁体層16aの上主面の右端部に位置している。信号電極28bは、上下方向に見て、長方形状を有している。信号電極28b(第1信号導体層)には、高周波信号が入出力する。 The signal electrode 28 b (first signal conductor layer) is provided on the laminate 12 . In this embodiment, the signal electrode 28 b (first signal conductor layer) is located on the upper main surface of the laminate 12 . More specifically, the signal electrode 28b is located at the right end of the upper major surface of the insulator layer 16a. The signal electrode 28b has a rectangular shape when viewed in the vertical direction. A high-frequency signal is input/output to/from the signal electrode 28b (first signal conductor layer).
 信号導体層22(第2信号導体層)は、図1に示すように、積層体12に設けられている。本実施形態では、信号導体層22(第2信号導体層)は、信号電極28a,28b(第1信号導体層)より下(第2方向)に位置している。信号導体層22は、絶縁体層16bの上主面に位置している。これにより、信号導体層22は、積層体12内に設けられている。信号導体層22は、線形状を有している。信号導体層22は、左右方向に延びている。信号導体層22は、絶縁体層16bの上主面の前後方向の中央に位置している。 The signal conductor layer 22 (second signal conductor layer) is provided on the laminate 12 as shown in FIG. In this embodiment, the signal conductor layer 22 (second signal conductor layer) is positioned below (second direction) the signal electrodes 28a and 28b (first signal conductor layer). The signal conductor layer 22 is located on the upper main surface of the insulator layer 16b. Thereby, the signal conductor layer 22 is provided within the laminate 12 . The signal conductor layer 22 has a linear shape. The signal conductor layer 22 extends in the left-right direction. The signal conductor layer 22 is positioned at the center of the upper main surface of the insulator layer 16b in the front-rear direction.
 ここで、信号導体層22の左端部は、上下方向に見て、信号電極28aと重なっている。信号導体層22の右端部は、上下方向に見て、信号電極28bと重なっている。そこで、信号導体層22は、線状部分22a、重複部分22b及び重複部分22cを含んでいる。線状部分22aは、上下方向に見て、信号電極28a,28bと重ならない部分である。線状部分22aは、線形状を有している。線状部分22aは、左右方向に延びている。重複部分22bは、上下方向に見て、信号電極28aと重なる部分である。重複部分22bは、線状部分22aの左端に接続されている。重複部分22cは、上下方向に見て、信号電極28b(第1信号導体層)と重なる部分である。重複部分22cは、線状部分22aの右端に接続されている。重複部分22b,22cは、上下方向に見て、円形状を有している。重複部分22bの前後方向の幅及び重複部分22cの前後方向の幅は、線状部分22aの前後方向の幅より大きい。 Here, the left end of the signal conductor layer 22 overlaps the signal electrode 28a when viewed in the vertical direction. The right end portion of the signal conductor layer 22 overlaps the signal electrode 28b when viewed in the vertical direction. Therefore, the signal conductor layer 22 includes a linear portion 22a, an overlapping portion 22b and an overlapping portion 22c. The linear portion 22a is a portion that does not overlap the signal electrodes 28a and 28b when viewed in the vertical direction. The linear portion 22a has a linear shape. The linear portion 22a extends in the left-right direction. The overlapping portion 22b is a portion that overlaps with the signal electrode 28a when viewed in the vertical direction. The overlapping portion 22b is connected to the left end of the linear portion 22a. The overlapping portion 22c is a portion that overlaps with the signal electrode 28b (first signal conductor layer) when viewed in the vertical direction. The overlapping portion 22c is connected to the right end of the linear portion 22a. The overlapping portions 22b and 22c have a circular shape when viewed in the vertical direction. The longitudinal width of the overlapping portion 22b and the longitudinal width of the overlapping portion 22c are larger than the longitudinal width of the linear portion 22a.
 層間接続導体v3は、積層体12に設けられている。層間接続導体v3は、上下方向に見て、重複部分22bと重なっている。層間接続導体v3は、絶縁体層16aを上下方向に貫通することにより、信号電極28a及び信号導体層22に接触している。これにより、信号電極28aと信号導体層22とが電気的に接続されている。 The interlayer connection conductor v3 is provided on the laminated body 12 . The interlayer connection conductor v3 overlaps the overlapping portion 22b when viewed in the vertical direction. The interlayer connection conductor v3 is in contact with the signal electrode 28a and the signal conductor layer 22 by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28a and the signal conductor layer 22 are electrically connected.
 層間接続導体v4は、積層体12に設けられている。層間接続導体v4は、上下方向に見て、重複部分22cと重なっている。層間接続導体v4は、絶縁体層16aを上下方向に貫通することにより、信号電極28b(第1信号導体層)及び信号導体層22(第2信号導体層)に接触している。これにより、信号電極28bと信号導体層22とが電気的に接続されている。以上のような、信号電極28a、信号電極28b(第1信号導体層)、信号導体層22(第2信号導体層)及び層間接続導体v3,v4には、高周波信号が伝送される。 The interlayer connection conductor v4 is provided in the laminate 12. The interlayer connection conductor v4 overlaps the overlapping portion 22c when viewed in the vertical direction. The interlayer connection conductor v4 is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected. A high-frequency signal is transmitted to the signal electrode 28a, the signal electrode 28b (first signal conductor layer), the signal conductor layer 22 (second signal conductor layer), and the interlayer connection conductors v3 and v4 as described above.
 第2リファレンス導体層24は、積層体12に設けられている。本実施形態では、第2リファレンス導体層24は、信号導体層22(第2信号導体層)より上(第1方向)に位置している。第2リファレンス導体層24は、絶縁体層16aの上主面に位置している。第2リファレンス導体層24は、絶縁体層16aの上主面の略全面を覆っている。第2リファレンス導体層24は、上下方向に見て、信号導体層22と重なっている。ただし、第2リファレンス導体層24は、信号電極28a,28bとは接触していない。第2リファレンス導体層24には、リファレンス電位が接続される。リファレンス電位は、例えば、グランド電位である。 The second reference conductor layer 24 is provided on the laminate 12 . In this embodiment, the second reference conductor layer 24 is positioned above (first direction) the signal conductor layer 22 (second signal conductor layer). The second reference conductor layer 24 is located on the upper main surface of the insulator layer 16a. The second reference conductor layer 24 covers substantially the entire upper main surface of the insulator layer 16a. The second reference conductor layer 24 overlaps the signal conductor layer 22 when viewed in the vertical direction. However, the second reference conductor layer 24 is not in contact with the signal electrodes 28a and 28b. A reference potential is connected to the second reference conductor layer 24 . The reference potential is, for example, the ground potential.
 第1リファレンス導体層26は、積層体12に設けられている。本実施形態では、第1リファレンス導体層26は、信号導体層22(第2信号導体層)より下(第2方向)に位置している。第1リファレンス導体層26は、絶縁体層16cの下主面に位置している。第1リファレンス導体層26は、絶縁体層16cの下主面の略全面を覆っている。第1リファレンス導体層26は、上下方向に見て、信号導体層22と重なっている。これにより、第1リファレンス導体層26は、上下方向に見て、重複部分22b及び重複部分22cの少なくとも一部分と重なっている。第1リファレンス導体層26には、リファレンス電位が接続される。リファレンス電位は、例えば、グランド電位である。以上のような信号導体層22、第2リファレンス導体層24及び第1リファレンス導体層26は、ストリップライン構造を有している。 The first reference conductor layer 26 is provided on the laminate 12 . In this embodiment, the first reference conductor layer 26 is positioned below (second direction) the signal conductor layer 22 (second signal conductor layer). The first reference conductor layer 26 is located on the lower main surface of the insulator layer 16c. The first reference conductor layer 26 covers substantially the entire lower main surface of the insulator layer 16c. The first reference conductor layer 26 overlaps the signal conductor layer 22 when viewed in the vertical direction. As a result, the first reference conductor layer 26 overlaps at least part of the overlapping portions 22b and 22c when viewed in the vertical direction. A reference potential is connected to the first reference conductor layer 26 . The reference potential is, for example, the ground potential. The signal conductor layer 22, the second reference conductor layer 24, and the first reference conductor layer 26 as described above have a stripline structure.
 複数の層間接続導体v1及び複数の層間接続導体v2は、積層体12に設けられている。複数の層間接続導体v1,v2は、第2リファレンス導体層24と第1リファレンス導体層26とを電気的に接続している。より詳細には、複数の層間接続導体v1及び複数の層間接続導体v2は、絶縁体層16a~16cを上下方向に貫通している。複数の層間接続導体v1及び複数の層間接続導体v2は、第2リファレンス導体層24及び第1リファレンス導体層26に接触している。複数の層間接続導体v1は、信号導体層22の前に位置している。複数の層間接続導体v1は、左右方向において等間隔に一列に並んでいる。複数の層間接続導体v2は、信号導体層22の後に位置している。複数の層間接続導体v2は、左右方向において等間隔に一列に並んでいる。 A plurality of interlayer connection conductors v1 and a plurality of interlayer connection conductors v2 are provided in the laminate 12 . A plurality of interlayer connection conductors v1 and v2 electrically connect the second reference conductor layer 24 and the first reference conductor layer 26 . More specifically, the plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 vertically pass through the insulator layers 16a to 16c. The plurality of interlayer connection conductors v1 and the plurality of interlayer connection conductors v2 are in contact with the second reference conductor layer 24 and the first reference conductor layer 26, respectively. A plurality of interlayer connection conductors v1 are positioned in front of the signal conductor layer 22 . The plurality of interlayer connection conductors v1 are arranged in a row at regular intervals in the horizontal direction. A plurality of interlayer connection conductors v2 are positioned behind the signal conductor layer 22 . The plurality of interlayer connection conductors v2 are arranged in a row at regular intervals in the horizontal direction.
 以上のような信号導体層22、第2リファレンス導体層24、第1リファレンス導体層26及び信号電極28a,28bは、例えば、絶縁体層16a~16cの上主面又は下主面に設けられた金属箔にエッチングが施されることにより形成されている。金属箔は、例えば、銅箔である。また、層間接続導体v1~v4は、例えば、ビアホール導体である。ビアホール導体は、絶縁体層16a~16cに貫通孔を形成し、貫通孔に導電性ペーストを充填し、導電性ペーストを焼結させることにより作製される。層間接続導体v1~v4は、例えば、スルーホール導体であってもよい。スルーホール導体は、絶縁体層16a~16cの一部又は全部を貫通する貫通孔を形成し、貫通孔にメッキを施すことにより作製される。 The signal conductor layer 22, the second reference conductor layer 24, the first reference conductor layer 26, and the signal electrodes 28a and 28b as described above are provided, for example, on the upper main surface or the lower main surface of the insulator layers 16a to 16c. It is formed by etching a metal foil. The metal foil is, for example, copper foil. Also, the interlayer connection conductors v1 to v4 are, for example, via-hole conductors. The via-hole conductors are produced by forming through-holes in the insulating layers 16a to 16c, filling the through-holes with a conductive paste, and sintering the conductive paste. The interlayer connection conductors v1 to v4 may be, for example, through-hole conductors. Through-hole conductors are produced by forming through-holes penetrating all or part of the insulator layers 16a to 16c and plating the through-holes.
 保護層18aは、第2リファレンス導体層24の上に積層されている。従って、保護層18aは、多層基板10において最も上に位置する絶縁体層である。保護層18aは、第2リファレンス導体層24の略全体を覆っている。ただし、保護層18aには、開口ha~hfが設けられている。開口ha~hcは、保護層18aの左端部に設けられている。開口hb,ha,hcは、前から後へとこの順に並んでいる。開口hd~hfは、保護層18aの右端部に設けられている。開口he,hd,hfは、前から後へとこの順に並んでいる。そして、信号電極28a,28bの少なくとも一部分のそれぞれは、開口ha,hdを介して多層基板10から外部に露出している。第2リファレンス導体層24の一部分は、開口hb,hc,he,hfを介して多層基板10から外部に露出している。 The protective layer 18 a is laminated on the second reference conductor layer 24 . Therefore, the protective layer 18a is the uppermost insulating layer in the multilayer substrate 10. As shown in FIG. The protective layer 18 a covers substantially the entire second reference conductor layer 24 . However, openings ha to hf are provided in the protective layer 18a. The openings ha to hc are provided at the left end of the protective layer 18a. The openings hb, ha, hc are arranged in this order from front to back. The openings hd to hf are provided at the right end of the protective layer 18a. The openings he, hd, and hf are arranged in this order from front to back. At least portions of the signal electrodes 28a and 28b are exposed to the outside from the multilayer substrate 10 through the openings ha and hd, respectively. A portion of the second reference conductor layer 24 is exposed outside from the multilayer substrate 10 through the openings hb, hc, he, and hf.
 保護層18bは、第1リファレンス導体層26の下に積層されている。従って、保護層18bは、多層基板10において最も下に位置する絶縁体層である。保護層18bは、第1リファレンス導体層26の略全体を覆っている。以上のような保護層18a,18bは、積層体12の一部ではない。保護層18a,18bの材料は、絶縁体層16a~16cの材料と異なる。特に、保護層18a,18bのそれぞれの材料は、隣接する絶縁体層16a,16cの材料と異なる。保護層18a,18bは、レジスト層である。従って、保護層18a,18bは、樹脂シートが絶縁体層16aの上主面及び絶縁体層16cの下主面に貼り付けられることにより形成されてもよいし、液体状の樹脂が絶縁体層16aの上主面及び絶縁体層16cの下主面に塗布され、固化されることにより形成されてもよい。 The protective layer 18b is laminated under the first reference conductor layer 26. Therefore, the protective layer 18b is the lowest insulating layer in the multilayer substrate 10. As shown in FIG. The protective layer 18 b covers substantially the entire first reference conductor layer 26 . The protective layers 18 a and 18 b as described above are not part of the laminate 12 . The material of the protective layers 18a, 18b is different from the material of the insulator layers 16a-16c. In particular, the material of each protective layer 18a, 18b is different from the material of the adjacent insulator layers 16a, 16c. The protective layers 18a and 18b are resist layers. Therefore, the protective layers 18a and 18b may be formed by attaching a resin sheet to the upper main surface of the insulating layer 16a and the lower main surface of the insulating layer 16c, or a liquid resin may be applied to the insulating layer. It may be formed by coating the upper main surface 16a and the lower main surface of the insulator layer 16c and solidifying.
 積層体12には、図1に示すように、絶縁体層16a~16cが存在しない第1空洞Sp1が設けられている。第1空洞Sp1は、上下方向において、信号導体層22(第2信号導体層)と第1リファレンス導体層26との間に位置している。具体的には、第1空洞Sp1は、図2に示すように、半球形状を有している。第1空洞Sp1は、絶縁体層16cの下主面から上方向に突出している。第1空洞Sp1の上端は、絶縁体層16bの上主面と絶縁体層16bの下主面との間に位置している。 As shown in FIG. 1, the laminate 12 is provided with a first cavity Sp1 in which the insulator layers 16a to 16c do not exist. The first cavity Sp1 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first reference conductor layer 26 in the vertical direction. Specifically, the first cavity Sp1 has a hemispherical shape, as shown in FIG. The first cavity Sp1 protrudes upward from the lower main surface of the insulator layer 16c. The upper end of the first cavity Sp1 is positioned between the upper main surface of the insulator layer 16b and the lower main surface of the insulator layer 16b.
 また、第1空洞Sp1は、図2及び図3に示すように、上下方向に見て、層間接続導体v4の少なくとも一部分と重なっている。本実施形態では、第1空洞Sp1は、上下方向に見て、層間接続導体v4の全体と重なっている。更に、第1空洞Sp1は、上下方向に見て、重複部分22cの少なくとも一部分と重なっている。本実施形態では、第1空洞Sp1は、上下方向に見て、重複部分22cの全体と重なっている。そして、第1空洞Sp1は、上下方向に見て、線状部分22aの右端部と重なっている。ただし、第1空洞Sp1と重複部分22cとが重なっている面積は、第1空洞Sp1と線状部分22aとが重なっている面積より大きい。 Also, as shown in FIGS. 2 and 3, the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction. In this embodiment, the first cavity Sp1 overlaps the entire interlayer connection conductor v4 when viewed in the vertical direction. Furthermore, the first cavity Sp1 overlaps at least a portion of the overlapping portion 22c when viewed in the vertical direction. In this embodiment, the first cavity Sp1 overlaps the entire overlapping portion 22c when viewed in the vertical direction. The first cavity Sp1 overlaps the right end of the linear portion 22a when viewed in the vertical direction. However, the overlapping area of the first cavity Sp1 and the overlapping portion 22c is larger than the overlapping area of the first cavity Sp1 and the linear portion 22a.
 積層体12には、図1に示すように、絶縁体層16a~16cが存在しない第1空洞Sp11が設けられている。ただし、第1空洞Sp11は、第1空洞Sp1と左右対称な構造を有するので、説明を省略する。 As shown in FIG. 1, the laminate 12 is provided with a first cavity Sp11 in which the insulator layers 16a to 16c do not exist. However, the first cavity Sp11 has a structure that is symmetrical to the first cavity Sp1, so description thereof will be omitted.
 また、図2及び図3に示すように、第1リファレンス導体層26を上下方向に貫通する1以上の貫通孔h1が第1リファレンス導体層26に設けられている。1以上の貫通孔h1は、第1空洞Sp1と繋がっている。本実施形態では、1以上の貫通孔h1の数は、1個である。貫通孔h1は、上下方向に見て、円形状を有している。貫通孔h1の直径は、第1空洞Sp1の直径及び重複部分22cの直径より小さい。そして、貫通孔h1は、上下方向に見て、第1空洞Sp1の中心及び重複部分22cの中心に位置している。これにより、貫通孔h1は、上下方向に見て、第1空洞Sp1の外縁の内側に位置している。また、貫通孔h1は、上下方向に見て、重複部分22cの外縁の内側に位置している。そして、貫通孔h1は、上下方向に見て、層間接続導体v4と重なっている。 In addition, as shown in FIGS. 2 and 3, one or more through holes h1 are provided in the first reference conductor layer 26 so as to penetrate the first reference conductor layer 26 in the vertical direction. One or more through holes h1 are connected to the first cavity Sp1. In this embodiment, the number of one or more through-holes h1 is one. The through hole h1 has a circular shape when viewed in the vertical direction. The diameter of the through hole h1 is smaller than the diameter of the first cavity Sp1 and the diameter of the overlapping portion 22c. The through hole h1 is located at the center of the first cavity Sp1 and the center of the overlapping portion 22c when viewed in the vertical direction. As a result, the through hole h1 is positioned inside the outer edge of the first cavity Sp1 when viewed in the vertical direction. Further, the through hole h1 is positioned inside the outer edge of the overlapping portion 22c when viewed in the vertical direction. The through hole h1 overlaps the interlayer connection conductor v4 when viewed in the vertical direction.
 また、第1リファレンス導体層26には、第1空洞Sp11と繋がる貫通孔(図示せず)が第1リファレンス導体層26に設けられている。ただし、この貫通孔は、貫通孔h1と左右対称な構造を有するので、説明を省略する。 Also, the first reference conductor layer 26 is provided with a through hole (not shown) connected to the first cavity Sp11. However, since this through-hole has a structure symmetrical to the through-hole h1, the explanation is omitted.
 ここで、第1空洞Sp1の形成について説明する。第1リファレンス導体層26をマスクとして絶縁体層16cにエッチングを施すことにより、絶縁体層16cにおいて貫通孔h1と隣接する部分を除去する。これにより、第1空洞Sp1が形成される。 Here, the formation of the first cavity Sp1 will be described. By etching the insulator layer 16c using the first reference conductor layer 26 as a mask, the portion of the insulator layer 16c adjacent to the through hole h1 is removed. Thereby, the first cavity Sp1 is formed.
[電子機器の構造]
 次に、多層基板10を備える電子機器1の構造について図面を参照しながら説明する。図4は、多層基板10を備える電子機器1の内部構造の背面図である。電子機器1は、例えば、携帯無線通信端末である。電子機器1は、例えば、スマートフォンである。
[Structure of electronic device]
Next, the structure of the electronic device 1 including the multilayer substrate 10 will be described with reference to the drawings. FIG. 4 is a rear view of the internal structure of the electronic device 1 including the multilayer substrate 10. FIG. The electronic device 1 is, for example, a mobile wireless communication terminal. The electronic device 1 is, for example, a smart phone.
 多層基板10は、第1区間A2及び第2区間A1,A3を含んでいる。第1区間A2は、多層基板10が折れ曲がる区間である。第2区間A1,A3は、多層基板10が折れ曲がらない区間である。すなわち、第1区間A2の距離率半径は、第2区間A1,A3の曲率半径より小さい。従って、第2区間A1,A3においても多層基板10が折れ曲がってもよい。多層基板10が折れ曲がるとは、多層基板10が外力を受けて変形することを意味する。変形は、塑性変形であってもよいし、弾性変形であってもよいし、塑性変形及び弾性変形であってもよい。 The multilayer substrate 10 includes a first section A2 and second sections A1 and A3. The first section A2 is a section where the multilayer substrate 10 is bent. The second sections A1 and A3 are sections in which the multilayer substrate 10 is not bent. That is, the distance rate radius of the first section A2 is smaller than the curvature radii of the second sections A1 and A3. Therefore, the multilayer substrate 10 may be bent in the second sections A1 and A3 as well. The bending of the multilayer substrate 10 means that the multilayer substrate 10 receives an external force and deforms. The deformation may be plastic deformation, elastic deformation, or both plastic deformation and elastic deformation.
 電子機器1におけるx軸、y軸及びz軸を以下の様に定義する。x軸は、第2区間A1での左右方向である。y軸は、第2区間A1での前後方向である。z軸は、第2区間A1での上下方向である。第2区間A1、第1区間A2及び第2区間A3は、x軸の正方向に向かってこの順に並んでいる。 The x-axis, y-axis, and z-axis in the electronic device 1 are defined as follows. The x-axis is the horizontal direction in the second section A1. The y-axis is the front-rear direction in the second section A1. The z-axis is the vertical direction in the second section A1. The second section A1, the first section A2, and the second section A3 are arranged in this order in the positive direction of the x-axis.
 図4に示すように、第1区間A2は、z軸方向(第2区間A1における上下方向)に第2区間A1に対して折れ曲がっている。従って、上下方向及び前後方向は、図4に示すように、多層基板10の位置によって異なる。積層体12が折れ曲がっていない第2区間A1(例えば、(1)の位置)では、上下方向及び左右方向のそれぞれは、z軸方向及びx軸方向と一致する。一方、積層体12が折れ曲がっている第1区間A2(例えば、(2)の位置)では、上下方向及び左右方向のそれぞれは、z軸方向及びx軸方向と一致しない。 As shown in FIG. 4, the first section A2 is bent with respect to the second section A1 in the z-axis direction (vertical direction in the second section A1). Therefore, the vertical direction and the front-rear direction differ depending on the position of the multilayer substrate 10, as shown in FIG. In the second section A1 (for example, position (1)) where the laminated body 12 is not bent, the vertical direction and the horizontal direction coincide with the z-axis direction and the x-axis direction, respectively. On the other hand, in the first section A2 (for example, position (2)) where the laminate 12 is bent, the vertical direction and the horizontal direction do not match the z-axis direction and the x-axis direction, respectively.
 電子機器1は、図4に示すように、多層基板10、コネクタ32a,32b,102a,102b、回路基板500,510を備えている。 The electronic device 1 includes a multilayer board 10, connectors 32a, 32b, 102a, 102b, and circuit boards 500, 510, as shown in FIG.
 回路基板500,510は、板形状を有している。回路基板500は、主面S105,S106を有している。主面S105は、主面S106よりz軸の負方向側に位置する。回路基板510は、主面S111,S112を有している。主面S111は、主面S112よりz軸の負方向側に位置する。回路基板500,510は、図示しない配線導体層やリファレンス導体層、電極等を含んでいる。 The circuit boards 500, 510 have a plate shape. The circuit board 500 has main surfaces S105 and S106. The main surface S105 is located on the negative direction side of the z-axis from the main surface S106. The circuit board 510 has main surfaces S111 and S112. The main surface S111 is located on the negative direction side of the z-axis from the main surface S112. The circuit boards 500 and 510 include wiring conductor layers, reference conductor layers, electrodes, etc., which are not shown.
 コネクタ32a,32bのそれぞれは、第2区間A1及び第2区間A3のz軸の正方向側の主面(上主面)に実装されている。より詳細には、コネクタ32aは、信号電極28a及び第2リファレンス導体層24に実装される。コネクタ32bは、信号電極28b及び第2リファレンス導体層24に実装される。 Each of the connectors 32a and 32b is mounted on the main surface (upper main surface) of the second section A1 and the second section A3 on the positive direction side of the z-axis. More specifically, the connector 32a is mounted on the signal electrode 28a and the second reference conductor layer 24. As shown in FIG. A connector 32 b is mounted on the signal electrode 28 b and the second reference conductor layer 24 .
 コネクタ102a,102bのそれぞれは、回路基板500の主面S105及び回路基板510の主面S111に実装されている。コネクタ102a,102bのそれぞれは、コネクタ32a,32bに接続されている。これにより、多層基板10は、回路基板500と回路基板510とを電気的に接続している。 The connectors 102a and 102b are mounted on the main surface S105 of the circuit board 500 and the main surface S111 of the circuit board 510, respectively. Connectors 102a and 102b are connected to connectors 32a and 32b, respectively. Thereby, the multilayer board 10 electrically connects the circuit board 500 and the circuit board 510 .
[効果]
 多層基板10によれば、信号電極28b(第1信号導体層)と信号導体層22(第2信号導体層)とを接続する層間接続導体v4が存在する箇所の特性インピーダンスを調整できる。より詳細には、多層基板10では、第1空洞Sp1は、上下方向に見て、層間接続導体v4の少なくとも一部分と重なり、かつ、上下方向において、信号導体層22(第2信号導体層)と第1リファレンス導体層26との間に位置している。これにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の誘電率が低くなる。すなわち、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が小さくなる。その結果、信号電極28b(第1信号導体層)と信号導体層22(第2信号導体層)とを接続する層間接続導体v4が存在する箇所の特性インピーダンスが高くなる。そして、第1空洞Sp1の大きさや位置を調整することにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量を調整できる。以上より、多層基板10によれば、信号電極28b(第1信号導体層)と信号導体層22(第2信号導体層)とを接続する層間接続導体v4が存在する箇所の特性インピーダンスを調整できる。
[effect]
According to the multilayer substrate 10, the characteristic impedance of the portion where the interlayer connection conductor v4 connecting the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) is present can be adjusted. More specifically, in the multilayer substrate 10, the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps the signal conductor layer 22 (second signal conductor layer) in the vertical direction. It is located between the first reference conductor layer 26 . As a result, the dielectric constant between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is lowered. That is, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced. As a result, the characteristic impedance at the location where the interlayer connection conductor v4 connecting the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) is present becomes high. By adjusting the size and position of the first cavity Sp1, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 can be adjusted. As described above, according to the multilayer substrate 10, the characteristic impedance of the portion where the interlayer connection conductor v4 that connects the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) exists can be adjusted. .
 多層基板10によれば、多層基板10の薄型化を図ることができる。より詳細には、多層基板10では、第1空洞Sp1は、上下方向に見て、層間接続導体v4の少なくとも一部分と重なり、かつ、上下方向において、信号導体層22(第2信号導体層)と第1リファレンス導体層26との間に位置している。これにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の誘電率が低くなる。すなわち、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が小さくなる。この場合、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との距離が短くなっても、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が大きくなりすぎない。その結果、多層基板10によれば、多層基板10の薄型化を図ることができる。 According to the multilayer substrate 10, the thickness of the multilayer substrate 10 can be reduced. More specifically, in the multilayer substrate 10, the first cavity Sp1 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps the signal conductor layer 22 (second signal conductor layer) in the vertical direction. It is located between the first reference conductor layer 26 . As a result, the dielectric constant between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is lowered. That is, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced. In this case, even if the distance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is shortened, the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected is The capacitance with the first reference conductor layer 26 does not become too large. As a result, according to the multilayer substrate 10, the thickness of the multilayer substrate 10 can be reduced.
 多層基板10によれば、第1空洞Sp1を容易に形成できる。より詳細には、第1リファレンス導体層26を上下方向に貫通する1以上の貫通孔h1が第1リファレンス導体層26に設けられている。これにより、第1リファレンス導体層26をマスクとして絶縁体層16cにエッチングを施すことにより、絶縁体層16cにおいて貫通孔h1と隣接する部分を除去する。これにより、貫通孔h1と繋がる第1空洞Sp1を形成できる。このように、多層基板10によれば、貫通孔h1を利用して、第1空洞Sp1を簡単に形成できる。 According to the multilayer substrate 10, the first cavity Sp1 can be easily formed. More specifically, the first reference conductor layer 26 is provided with one or more through holes h<b>1 penetrating through the first reference conductor layer 26 in the vertical direction. As a result, the insulating layer 16c is etched using the first reference conductor layer 26 as a mask, thereby removing the portion of the insulating layer 16c adjacent to the through hole h1. Thereby, the first cavity Sp1 connected to the through hole h1 can be formed. Thus, according to the multilayer substrate 10, the first cavity Sp1 can be easily formed using the through hole h1.
 多層基板10によれば、信号導体層22に対する高いシールド性を得ることができる。より詳細には、多層基板10は、信号導体層22より上に位置している第2リファレンス導体層24及び信号導体層22より下に位置している第1リファレンス導体層26を備えている。従って、信号導体層22、第2リファレンス導体層24及び第1リファレンス導体層26は、ストリップライン構造を有している。これにより、信号導体層22は、第2リファレンス導体層24及び第1リファレンス導体層26によりシールドされている。よって、多層基板10によれば、信号導体層22に対する高いシールド性を得ることができる。更に、上下方向に見て、貫通孔h1が第1空洞Sp1より小さいので、第1リファレンス導体層26が高いシールド性を有する。 According to the multilayer substrate 10, high shielding properties for the signal conductor layer 22 can be obtained. More specifically, multilayer substrate 10 includes a second reference conductor layer 24 positioned above signal conductor layer 22 and a first reference conductor layer 26 positioned below signal conductor layer 22 . Therefore, the signal conductor layer 22, the second reference conductor layer 24 and the first reference conductor layer 26 have a stripline structure. Thereby, the signal conductor layer 22 is shielded by the second reference conductor layer 24 and the first reference conductor layer 26 . Therefore, according to the multilayer substrate 10, a high shielding property for the signal conductor layer 22 can be obtained. Furthermore, since the through hole h1 is smaller than the first cavity Sp1 when viewed in the vertical direction, the first reference conductor layer 26 has high shielding properties.
 多層基板10によれば、絶縁体層16a~16cの材料が熱可塑性樹脂であるので、多層基板10を塑性変形させることが容易である。従って、多層基板10が折れ曲がった状態を維持することが容易である。 According to the multilayer substrate 10, since the material of the insulator layers 16a to 16c is thermoplastic resin, the multilayer substrate 10 can be easily plastically deformed. Therefore, it is easy to maintain the bent state of the multilayer substrate 10 .
 多層基板10によれば、多層基板10が塑性変形することにより、電子機器内に形成された狭い空間に沿って多層基板10が配置されることが容易になる。 According to the multilayer substrate 10, the plastic deformation of the multilayer substrate 10 facilitates the arrangement of the multilayer substrate 10 along the narrow space formed in the electronic device.
(第1変形例)
 以下に、第1変形例に係る多層基板10aについて図面を参照しながら説明する。図5は、多層基板10aの右端部の断面図である。図6は、多層基板10aの左右方向に直交する断面図である。
(First modification)
A multilayer substrate 10a according to a first modified example will be described below with reference to the drawings. FIG. 5 is a cross-sectional view of the right end portion of the multilayer substrate 10a. FIG. 6 is a cross-sectional view orthogonal to the left-right direction of the multilayer substrate 10a.
 多層基板10aは、信号導体層22及び第1リファレンス導体層26がマイクロストリップライン構造を有している点において多層基板10と相違する。より詳細には、多層基板10aでは、第2リファレンス導体層24は、上下方向に見て、信号導体層22と重なっていない。多層基板10aのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10aは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10a differs from the multilayer substrate 10 in that the signal conductor layer 22 and the first reference conductor layer 26 have a microstrip line structure. More specifically, in the multilayer substrate 10a, the second reference conductor layer 24 does not overlap the signal conductor layer 22 when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10a is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer substrate 10a can have the same effect as the multi-layer substrate 10. FIG.
(第2変形例)
 以下に、第2変形例に係る多層基板10bについて図面を参照しながら説明する。図7は、多層基板10bの左右方向に直交する断面図である。多層基板10bの右端部の断面図については図5を援用する。
(Second modification)
A multilayer substrate 10b according to a second modified example will be described below with reference to the drawings. FIG. 7 is a cross-sectional view orthogonal to the horizontal direction of the multilayer substrate 10b. FIG. 5 is used for the cross-sectional view of the right end portion of the multilayer substrate 10b.
 多層基板10bは、リファレンス導体層23a,23bを更に備えている点において多層基板10aと相違する。リファレンス導体層23a,23bは、絶縁体層16bの上主面に位置している。リファレンス導体層23aは、信号導体層22の前に位置している。リファレンス導体層23bは、信号導体層22の後に位置している。リファレンス導体層23a,23bは、信号導体層22に沿って延びている。これにより、信号導体層22とリファレンス導体層23a,23bは、コプレナー構造を有している。また、第1リファレンス導体層26は、層間接続導体(図示せず)を介してリファレンス導体層23a,23bに接続されている。多層基板10bのその他の構造は、多層基板10aと同じであるので説明を省略する。多層基板10bは、多層基板10aと同じ作用効果を奏することができる。 The multilayer substrate 10b differs from the multilayer substrate 10a in that it further includes reference conductor layers 23a and 23b. The reference conductor layers 23a and 23b are located on the upper main surface of the insulator layer 16b. The reference conductor layer 23 a is positioned in front of the signal conductor layer 22 . The reference conductor layer 23b is positioned behind the signal conductor layer 22. FIG. The reference conductor layers 23 a and 23 b extend along the signal conductor layer 22 . Thus, the signal conductor layer 22 and the reference conductor layers 23a and 23b have a coplanar structure. Also, the first reference conductor layer 26 is connected to the reference conductor layers 23a and 23b via interlayer connection conductors (not shown). The rest of the structure of the multilayer substrate 10b is the same as that of the multilayer substrate 10a, so the description is omitted. The multilayer substrate 10b can have the same effect as the multilayer substrate 10a.
(第3変形例)
 以下に、第3変形例に係る多層基板10cについて図面を参照しながら説明する。図8は、多層基板10cの断面図である。
(Third modification)
A multilayer substrate 10c according to a third modified example will be described below with reference to the drawings. FIG. 8 is a cross-sectional view of the multilayer substrate 10c.
 多層基板10cは、第2空洞Sp2が積層体12に設けられている点において多層基板10と相違する。より詳細には、多層基板10cは、信号導体層25を備えている。信号導体層25は、絶縁体層16aの上主面に位置している。信号導体層25は、左右方向に延びている。信号導体層25の左端部は、上下方向に見て、信号導体層22の右端部と重なっている。また、層間接続導体v4は、絶縁体層16aを上下方向に貫通することにより、信号導体層25(第1信号導体層)及び信号導体層22(第2信号導体層)に接触している。 The multilayer substrate 10c differs from the multilayer substrate 10 in that the second cavity Sp2 is provided in the laminate 12. More specifically, the multi-layer board 10c includes a signal conductor layer 25. As shown in FIG. The signal conductor layer 25 is located on the upper main surface of the insulator layer 16a. The signal conductor layer 25 extends in the left-right direction. The left end portion of the signal conductor layer 25 overlaps the right end portion of the signal conductor layer 22 when viewed in the vertical direction. Further, the interlayer connection conductor v4 is in contact with the signal conductor layer 25 (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a.
 積層体12は、絶縁体層16dを更に含んでいる。絶縁体層16dは、絶縁体層16aの上に積層されている。第2リファレンス導体層24は、絶縁体層16dの上主面に位置している。これにより、第2リファレンス導体層24は、信号導体層25(第1信号導体層)より上(第1方向)に位置している。第2リファレンス導体層24は、上下方向に見て、重複部分22cの少なくとも一部分と重なっている。 The laminate 12 further includes an insulator layer 16d. The insulator layer 16d is laminated on the insulator layer 16a. The second reference conductor layer 24 is located on the upper main surface of the insulator layer 16d. Thereby, the second reference conductor layer 24 is positioned above (in the first direction) the signal conductor layer 25 (first signal conductor layer). The second reference conductor layer 24 overlaps at least a portion of the overlapping portion 22c when viewed in the vertical direction.
 積層体12には、絶縁体層16a~16dが存在しない第2空洞Sp2が設けられている。第2空洞Sp2は、上下方向に見て、層間接続導体v4の少なくとも一部分と重なり、かつ、上下方向において、信号導体層25(第1信号導体層)と第2リファレンス導体層24との間に位置している。 The laminate 12 is provided with a second cavity Sp2 in which the insulator layers 16a to 16d do not exist. The second cavity Sp2 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and is between the signal conductor layer 25 (first signal conductor layer) and the second reference conductor layer 24 in the vertical direction. positioned.
 また、第2リファレンス導体層24を上下方向に貫通する1以上の貫通孔h2が第2リファレンス導体層24に設けられている。1以上の貫通孔h2は、第2空洞Sp2と繋がっている。本実施形態では、1以上の貫通孔h2の数は、1個である。貫通孔h2は、上下方向に見て、円形状を有している。貫通孔h2の直径は、第2空洞Sp2の直径及び重複部分22cの直径より小さい。そして、貫通孔h2は、上下方向に見て、第2空洞Sp2の中心及び重複部分22cの中心に位置している。これにより、貫通孔h2は、上下方向に見て、第2空洞Sp2の外縁の内側に位置している。また、貫通孔h2は、上下方向に見て、重複部分22cの外縁の内側に位置している。そして、貫通孔h2は、上下方向に見て、層間接続導体v4と重なっている。多層基板10cのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10cによれば、多層基板10と同じ作用効果を奏することができる。 Also, the second reference conductor layer 24 is provided with one or more through holes h2 penetrating through the second reference conductor layer 24 in the vertical direction. One or more through holes h2 are connected to the second cavity Sp2. In this embodiment, the number of one or more through-holes h2 is one. The through hole h2 has a circular shape when viewed in the vertical direction. The diameter of the through hole h2 is smaller than the diameter of the second cavity Sp2 and the diameter of the overlapping portion 22c. The through hole h2 is positioned at the center of the second cavity Sp2 and the center of the overlapping portion 22c when viewed in the vertical direction. Thereby, the through hole h2 is positioned inside the outer edge of the second cavity Sp2 when viewed in the vertical direction. Further, the through hole h2 is located inside the outer edge of the overlapping portion 22c when viewed in the vertical direction. The through hole h2 overlaps the interlayer connection conductor v4 when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10c is the same as that of the multilayer substrate 10, so description thereof will be omitted. According to the multilayer substrate 10c, the same effects as those of the multilayer substrate 10 can be obtained.
 多層基板10cによれば、多層基板10cの薄型化を更に図ることができる。より詳細には、多層基板10cでは、第2空洞Sp2は、上下方向に見て、層間接続導体v4の少なくとも一部分と重なり、かつ、上下方向において、信号導体層25(第1信号導体層)と第2リファレンス導体層24との間に位置している。これにより、信号導体層25において層間接続導体v4が接続されている部分と第2リファレンス導体層24との間の誘電率が低くなる。すなわち、信号導体層25において層間接続導体v4が接続されている部分と第2リファレンス導体層24との間の容量が小さくなる。この場合、信号導体層25において層間接続導体v4が接続されている部分と第2リファレンス導体層24との距離が短くなっても、信号導体層25において層間接続導体v4が接続されている部分と第2リファレンス導体層24との間の容量が大きくなりすぎない。その結果、多層基板10cによれば、多層基板10cの薄型化を更に図ることができる。 According to the multilayer substrate 10c, it is possible to further reduce the thickness of the multilayer substrate 10c. More specifically, in the multilayer substrate 10c, the second cavity Sp2 overlaps at least a portion of the interlayer connection conductor v4 when viewed in the vertical direction, and also overlaps with the signal conductor layer 25 (first signal conductor layer) in the vertical direction. It is located between the second reference conductor layer 24 and the second reference conductor layer 24 . As a result, the dielectric constant between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is lowered. That is, the capacitance between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is reduced. In this case, even if the distance between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is reduced, the distance between the portion of the signal conductor layer 25 to which the interlayer connection conductor v4 is connected and the second reference conductor layer 24 is reduced. The capacitance with the second reference conductor layer 24 does not become too large. As a result, according to the multilayer substrate 10c, it is possible to further reduce the thickness of the multilayer substrate 10c.
(第4変形例)
 以下に、第4変形例に係る多層基板モジュール200について図面を参照しながら説明する。図9は、多層基板モジュール200の断面図である。
(Fourth modification)
A multilayer board module 200 according to a fourth modification will be described below with reference to the drawings. FIG. 9 is a cross-sectional view of the multilayer board module 200. As shown in FIG.
 多層基板モジュール200は、多層基板10(第1多層基板)及び多層基板110(第2多層基板)を備えている。多層基板110は、多層基板10と上下対称な構造を有している。そこで、多層基板110の構造物には、多層基板10の構造物に付している参照符号に100を足した参照符号を付した。 The multilayer board module 200 includes a multilayer board 10 (first multilayer board) and a multilayer board 110 (second multilayer board). The multilayer substrate 110 has a vertically symmetrical structure with the multilayer substrate 10 . Therefore, the structures of the multilayer substrate 110 are given reference numerals obtained by adding 100 to the reference numerals of the structures of the multilayer substrate 10 .
 多層基板110は、多層基板10より上に位置している。そして、多層基板10の右端部は、上下方向に見て、多層基板110の左端部と重なっている。多層基板10(第1多層基板)の信号電極28b(第1信号導体層)は、多層基板110(第2多層基板)の信号電極128b(第1信号導体層)に導電性接合材300により固定されている。導電性接合材300は、例えば、半田や導電性接着剤である。そして、第1空洞Sp1,Sp101は、上下方向に見て、導電性接合材300と重なっている。 The multilayer substrate 110 is positioned above the multilayer substrate 10 . The right end portion of the multilayer substrate 10 overlaps the left end portion of the multilayer substrate 110 when viewed in the vertical direction. The signal electrode 28b (first signal conductor layer) of the multilayer substrate 10 (first multilayer substrate) is fixed to the signal electrode 128b (first signal conductor layer) of the multilayer substrate 110 (second multilayer substrate) with a conductive bonding material 300. It is The conductive bonding material 300 is, for example, solder or a conductive adhesive. The first cavities Sp1 and Sp101 overlap the conductive bonding material 300 when viewed in the vertical direction.
 以上のような多層基板モジュール200によれば、多層基板モジュール200の薄型化を図ることができる。より詳細には、多層基板10と多層基板110とが接続されている部分は、導電性接合材300が存在するので、薄型化が難しい。そこで、すでに説明を行ったように、多層基板10,110の薄型化が図られている。そして、多層基板10,110の薄型化が図られている部分において、多層基板10と多層基板110とが接続されている。これにより、多層基板10と多層基板110とが接続されている部分の薄型化が図られる。その結果、多層基板モジュール200によれば、多層基板モジュール200の薄型化を図ることができる。 According to the multilayer board module 200 as described above, the thickness of the multilayer board module 200 can be reduced. More specifically, it is difficult to reduce the thickness of the portion where the multilayer substrate 10 and the multilayer substrate 110 are connected because the conductive bonding material 300 exists. Therefore, as already explained, thinning of the multilayer substrates 10 and 110 is attempted. Multilayer substrates 10 and 110 are connected to each other at portions where multilayer substrates 10 and 110 are thinned. As a result, the thickness of the portion where the multilayer substrate 10 and the multilayer substrate 110 are connected can be reduced. As a result, according to the multilayer board module 200, the thickness of the multilayer board module 200 can be reduced.
(第5変形例)
 以下に、第5変形例に係る多層基板モジュール200aについて図面を参照しながら説明する。図10は、多層基板モジュール200aの断面図である。
(Fifth modification)
A multilayer board module 200a according to a fifth modification will be described below with reference to the drawings. FIG. 10 is a cross-sectional view of the multilayer board module 200a.
 多層基板モジュール200aは、第1空洞Sp101が多層基板110に設けられてない点において多層基板モジュール200と相違する。多層基板モジュール200aのその他の構造は、多層基板モジュール200と同じであるので説明を省略する。多層基板モジュール200aは、多層基板モジュール200と同じ作用効果を奏することができる。 The multilayer board module 200a differs from the multilayer board module 200 in that the first cavity Sp101 is not provided in the multilayer board 110. The rest of the structure of the multilayer board module 200a is the same as that of the multilayer board module 200, so the description is omitted. The multi-layer board module 200a can have the same effects as the multi-layer board module 200. FIG.
(第6変形例)
 以下に、第6変形例に係る多層基板10dについて図面を参照しながら説明する。図11は、多層基板10dの断面図である。
(Sixth modification)
A multilayer substrate 10d according to a sixth modification will be described below with reference to the drawings. FIG. 11 is a cross-sectional view of the multilayer substrate 10d.
 多層基板10dは、積層体12が第1領域A11及び第2領域A12を有している点において多層基板10と相違する。第1領域A11は、第2領域A12の右に位置している。第1領域A11と第2領域A12とは隣接している。第1領域A11の曲げ剛性は、第2領域A12の曲げ剛性より高い。曲げ剛性は、例えば、第1領域A11及び第2領域A12のそれぞれに同じ大きさの力を加えたときの第1領域A11及び第2領域A12のそれぞれの変形量により測定可能である。具体的には、第1領域A11では、絶縁体層16a~16eが上下方向に積層されている。第2領域A12では、絶縁体層16a~16cが上下方向に積層されている。従って、第1領域A11の上下方向の大きさは、第2領域A12の上下方向の大きさより大きい。その結果、第1領域A11の曲げ剛性は、第2領域A12の曲げ剛性より高い。そして、第1空洞Sp1は、第1領域A11に位置している。多層基板10dのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10dは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10d differs from the multilayer substrate 10 in that the laminate 12 has a first area A11 and a second area A12. The first area A11 is located to the right of the second area A12. The first area A11 and the second area A12 are adjacent to each other. The bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12. The bending stiffness can be measured, for example, by the amount of deformation of each of the first area A11 and the second area A12 when the same force is applied to each of the first area A11 and the second area A12. Specifically, in the first region A11, the insulator layers 16a to 16e are stacked vertically. Insulator layers 16a to 16c are stacked vertically in the second region A12. Therefore, the size of the first area A11 in the vertical direction is larger than the size of the second area A12 in the vertical direction. As a result, the bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12. The first cavity Sp1 is located in the first region A11. The rest of the structure of the multilayer substrate 10d is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer substrate 10d can have the same effect as the multi-layer substrate 10. FIG.
 また、第1領域A11の曲げ剛性は、第2領域A12の曲げ剛性より高い。そのため、第1領域A11に第1空洞Sp1が位置していても、第1領域A11の十分な曲げ剛性を確保することが容易である。また、第1領域A11が変形しにくいので、第1空洞Sp1も変形しにくい。 Also, the bending rigidity of the first area A11 is higher than the bending rigidity of the second area A12. Therefore, even if the first cavity Sp1 is located in the first region A11, it is easy to ensure sufficient bending rigidity of the first region A11. Further, since the first region A11 is difficult to deform, the first cavity Sp1 is also difficult to deform.
(第7変形例)
 以下に、第7変形例に係る多層基板10eについて図面を参照しながら説明する。図12は、多層基板10eの上面図である。図12では、多層基板10eを透視した。図13は、多層基板10eの断面図である。
(Seventh modification)
A multilayer substrate 10e according to a seventh modification will be described below with reference to the drawings. FIG. 12 is a top view of the multilayer substrate 10e. In FIG. 12, the multilayer substrate 10e is seen through. FIG. 13 is a cross-sectional view of the multilayer substrate 10e.
 多層基板10eは、信号電極28bの構造において多層基板10と相違する。重複部分22cは、線状部分22aの右端部に接続されている。信号電極28bは、前後方向に延びる長辺を有する長方形状を有している。 The multilayer substrate 10e differs from the multilayer substrate 10 in the structure of the signal electrodes 28b. The overlapping portion 22c is connected to the right end of the linear portion 22a. The signal electrode 28b has a rectangular shape with long sides extending in the front-rear direction.
 層間接続導体v4は、上下方向に見て、信号電極28bの後部と重なっている。層間接続導体v4は、絶縁体層16aを上下方向に貫通することにより、信号電極28b(第1信号導体層)及び信号導体層22(第2信号導体層)に接触している。これにより、信号電極28bと信号導体層22とが電気的に接続されている。 The interlayer connection conductor v4 overlaps the rear portion of the signal electrode 28b when viewed in the vertical direction. The interlayer connection conductor v4 is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected.
 また、積層体12には、絶縁体層16a~16cが存在しない第3空洞Sp3が設けられている。第3空洞Sp3は、上下方向において、信号導体層22(第2信号導体層)と第1リファレンス導体層26との間に位置している。また、第3空洞Sp3は、上下方向において、信号電極28b(第1信号導体層)と第1リファレンス導体層26との間に位置している。第3空洞Sp3は、上下方向に見て、層間接続導体と重なっていない。更に、第3空洞Sp3は、上下方向に見て、信号電極28bの一部分と重なっている。多層基板10eのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10eは、多層基板10と同じ作用効果を奏することができる。 Also, the laminate 12 is provided with a third cavity Sp3 in which the insulator layers 16a to 16c do not exist. The third cavity Sp3 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first reference conductor layer 26 in the vertical direction. The third cavity Sp3 is positioned between the signal electrode 28b (first signal conductor layer) and the first reference conductor layer 26 in the vertical direction. The third cavity Sp3 does not overlap the interlayer connection conductor when viewed in the vertical direction. Furthermore, the third cavity Sp3 partially overlaps the signal electrode 28b when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10e is the same as that of the multilayer substrate 10, so the description is omitted. The multilayer substrate 10 e can have the same effect as the multilayer substrate 10 .
 なお、第1空洞Sp1と第3空洞Sp3とが繋がっていてもよい。第3空洞Sp3は、上下方向に見て、層間接続導体と重なっていない。 Note that the first cavity Sp1 and the third cavity Sp3 may be connected. The third cavity Sp3 does not overlap the interlayer connection conductor when viewed in the vertical direction.
(第8変形例)
 以下に、第8変形例に係る多層基板10fについて図面を参照しながら説明する。図14は、多層基板10fの断面図である。
(Eighth modification)
A multilayer substrate 10f according to an eighth modification will be described below with reference to the drawings. FIG. 14 is a cross-sectional view of the multilayer substrate 10f.
 多層基板10fは、第1空洞Sp1の大きさにおいて多層基板10と相違する。多層基板10fの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、第1空洞Sp1は、信号導体層22(第2導体層)に接している。より正確には、第1空洞Sp1の上端は、重複部分22cに接している。多層基板10fのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10fは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10f differs from the multilayer substrate 10 in the size of the first cavity Sp1. The first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10. FIG. Thereby, the first cavity Sp1 is in contact with the signal conductor layer 22 (second conductor layer). More precisely, the upper end of the first cavity Sp1 is in contact with the overlapping portion 22c. The rest of the structure of the multilayer substrate 10f is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10f can have the same effect as the multi-layer board 10. FIG.
 多層基板10fの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が小さくなる。 The first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
(第9変形例)
 以下に、第9変形例に係る多層基板10gについて図面を参照しながら説明する。図15は、多層基板10gの断面図である。
(Ninth modification)
A multilayer substrate 10g according to a ninth modification will be described below with reference to the drawings. FIG. 15 is a cross-sectional view of the multilayer substrate 10g.
 多層基板10gは、第1空洞Sp1の大きさにおいて多層基板10と相違する。多層基板10fの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、第1空洞Sp1は、層間接続導体v4に接している。より正確には、第1空洞Sp1の上端は、重複部分22cより上に位置している。これにより、層間接続導体v4の下端部は、第1空洞Sp1に位置している。多層基板10gのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10gは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10g differs from the multilayer substrate 10 in the size of the first cavity Sp1. The first cavity Sp1 of the multilayer substrate 10f is larger than the first cavity Sp1 of the multilayer substrate 10. FIG. Thereby, the first cavity Sp1 is in contact with the interlayer connection conductor v4. More precisely, the upper end of the first cavity Sp1 is positioned above the overlapping portion 22c. As a result, the lower end of the interlayer connection conductor v4 is located in the first cavity Sp1. The rest of the structure of the multilayer substrate 10g is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10g can have the same effect as the multi-layer board 10. FIG.
 多層基板10gの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が小さくなる。 The first cavity Sp1 of the multilayer substrate 10g is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
(第10変形例)
 以下に、第10変形例に係る多層基板10hについて図面を参照しながら説明する。図16は、多層基板10hの断面図である。
(Tenth Modification)
A multilayer substrate 10h according to a tenth modification will be described below with reference to the drawings. FIG. 16 is a cross-sectional view of the multilayer substrate 10h.
 多層基板10hは、第1空洞Sp1の大きさにおいて多層基板10と相違する。多層基板10hの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、第1空洞Sp1は、信号電極28bに接している。多層基板10hのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10hは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10h differs from the multilayer substrate 10 in the size of the first cavity Sp1. The first cavity Sp<b>1 of the multilayer substrate 10 h is larger than the first cavity Sp<b>1 of the multilayer substrate 10 . Thereby, the first cavity Sp1 is in contact with the signal electrode 28b. The rest of the structure of the multilayer substrate 10h is the same as that of the multilayer substrate 10, so the explanation is omitted. The multi-layer board 10h can have the same effect as the multi-layer board 10. FIG.
 多層基板10hの第1空洞Sp1は、多層基板10の第1空洞Sp1より大きい。これにより、信号導体層22において層間接続導体v4が接続されている部分と第1リファレンス導体層26との間の容量が小さくなる。 The first cavity Sp1 of the multilayer substrate 10h is larger than the first cavity Sp1 of the multilayer substrate 10. As a result, the capacitance between the portion of the signal conductor layer 22 to which the interlayer connection conductor v4 is connected and the first reference conductor layer 26 is reduced.
(第11変形例)
 以下に、第11変形例に係る多層基板10iについて図面を参照しながら説明する。図17は、多層基板10iの上面図である。図17では、多層基板10iを透視した。
(11th modification)
A multilayer substrate 10i according to the eleventh modification will be described below with reference to the drawings. FIG. 17 is a top view of the multilayer substrate 10i. In FIG. 17, the multilayer substrate 10i is seen through.
 多層基板10iは、貫通孔h1a~h1dの数において多層基板10と相違する。多層基板10iでは、第1空洞Sp1と繋がっている貫通孔h1a~h1dの数は、複数である。本実施形態では、貫通孔h1a~h1dの数は、4個である。ただし、上下方向に見て、貫通孔h1a~h1dの面積のそれぞれは、貫通孔h1の面積より小さい。また、第1空洞Sp1は、上下方向に見て、貫通孔h1a~h1dを中心とする4つの円が重ね合された形状を有している。多層基板10iのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10iは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10i differs from the multilayer substrate 10 in the number of through holes h1a to h1d. The multilayer substrate 10i has a plurality of through holes h1a to h1d connected to the first cavity Sp1. In this embodiment, the number of through holes h1a to h1d is four. However, when viewed in the vertical direction, each area of the through holes h1a to h1d is smaller than the area of the through hole h1. The first cavity Sp1 has a shape in which four circles centered on the through holes h1a to h1d are superimposed when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10i is the same as that of the multilayer substrate 10, so the description is omitted. The multilayer substrate 10i can have the same effect as the multilayer substrate 10. FIG.
 多層基板10iによれば、第1空洞Sp1と繋がっている貫通孔h1a~h1dの数は、複数である。これにより、上下方向に見て、貫通孔h1a~h1dの面積のそれぞれは、貫通孔h1の面積より小さくてもよい。その結果、貫通孔h1a~h1dを介して多層基板10iの外部に電磁界が漏れることが抑制される。 According to the multilayer substrate 10i, the number of through holes h1a to h1d connected to the first cavity Sp1 is plural. Accordingly, when viewed in the vertical direction, each area of the through holes h1a to h1d may be smaller than the area of the through hole h1. As a result, leakage of the electromagnetic field to the outside of the multilayer substrate 10i through the through holes h1a to h1d is suppressed.
(第12変形例)
 以下に、第12変形例に係る多層基板10jについて図面を参照しながら説明する。図18は、多層基板10jの上面図である。図18では、多層基板10jを透視した。
(Twelfth modification)
A multilayer substrate 10j according to a twelfth modification will be described below with reference to the drawings. FIG. 18 is a top view of the multilayer substrate 10j. In FIG. 18, the multilayer substrate 10j is seen through.
 多層基板10jは、貫通孔h1の形状及び第1空洞Sp1の形状において多層基板10と相違する。多層基板10jでは、貫通孔h1は、上下方向に見て、左右方向に延びる長円形状を有している。また、第1空洞Sp1は、上下方向に見て、左右方向に延びる長円形状を有している。多層基板10jのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10jは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10j differs from the multilayer substrate 10 in the shape of the through hole h1 and the shape of the first cavity Sp1. In the multilayer substrate 10j, the through hole h1 has an oval shape extending in the horizontal direction when viewed in the vertical direction. Also, the first cavity Sp1 has an oval shape extending in the horizontal direction when viewed in the vertical direction. The rest of the structure of the multilayer substrate 10j is the same as that of the multilayer substrate 10, so the description is omitted. The multilayer substrate 10j can have the same effect as the multilayer substrate 10. FIG.
 多層基板10jによれば、貫通孔h1が長円形状を有しているので、長円状の第1空洞Sp1を形成できる。 According to the multilayer substrate 10j, since the through hole h1 has an oval shape, the oval first cavity Sp1 can be formed.
(第13変形例)
 以下に、第13変形例に係る多層基板10kについて図面を参照しながら説明する。図19は、多層基板10kの断面図である。図20は、多層基板10kの上面図である。図20では、多層基板10kを透視した。図21は、層間接続導体v4近傍の等価回路図である。
(13th modification)
A multilayer substrate 10k according to a thirteenth modification will be described below with reference to the drawings. FIG. 19 is a cross-sectional view of the multilayer substrate 10k. FIG. 20 is a top view of the multilayer substrate 10k. In FIG. 20, the multilayer substrate 10k is seen through. FIG. 21 is an equivalent circuit diagram near the interlayer connection conductor v4.
 多層基板10kは、第1空洞Sp1の位置及び第1空洞Sp1の形状において多層基板10と相違する。より詳細には、第1空洞Sp1は、上下方向に見て、左右方向に延びる長円形状を有している。また、第1空洞Sp1の中心は、上下方向に見て、重複部分22cより左に位置している。これにより、第1空洞Sp1は、上下方向に見て、重複部分22c及び線状部分22aに重なっている。そして、上下方向に見て、第1空洞Sp1と線状部分22aとが重なっている領域の左右方向の長さは、第1空洞Sp1と重複部分22cとが重なっている左右方向の長さより短い。このように、線状部分22aの右端部が、上下方向に見て、第1空洞Sp1と重なると、線状部分22aの右端部と第1リファレンス導体層26との間の容量が小さくなる。すなわち、線状部分22aは、図21に示すように、インダクタLとして機能する。一方、重複部分22cにおいて第1空洞Sp1と重ならない部分と第1リファレンス導体層26との間の容量は大きくなる。すなわち、重複部分22cにおいて第1空洞Sp1と重ならない部分と第1リファレンス導体層26とは、図21に示すように、キャパシタCとして機能する。以上より、ローパスフィルタが形成される。多層基板10kのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10kは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10k differs from the multilayer substrate 10 in the position of the first cavity Sp1 and the shape of the first cavity Sp1. More specifically, the first cavity Sp1 has an oval shape extending in the horizontal direction when viewed in the vertical direction. In addition, the center of the first cavity Sp1 is positioned to the left of the overlapping portion 22c when viewed in the vertical direction. As a result, the first cavity Sp1 overlaps the overlapping portion 22c and the linear portion 22a when viewed in the vertical direction. When viewed in the vertical direction, the length in the left-right direction of the region where the first cavity Sp1 and the linear portion 22a overlap is shorter than the length in the left-right direction of the overlap between the first cavity Sp1 and the overlapping portion 22c. . In this way, when the right end of the linear portion 22a overlaps the first cavity Sp1 when viewed vertically, the capacitance between the right end of the linear portion 22a and the first reference conductor layer 26 is reduced. That is, the linear portion 22a functions as an inductor L, as shown in FIG. On the other hand, the capacitance between the overlapping portion 22c that does not overlap with the first cavity Sp1 and the first reference conductor layer 26 increases. That is, the portion of the overlapping portion 22c that does not overlap with the first cavity Sp1 and the first reference conductor layer 26 function as a capacitor C, as shown in FIG. A low-pass filter is formed from the above. The rest of the structure of the multilayer substrate 10k is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10k can have the same effect as the multi-layer board 10. FIG.
 多層基板10kによれば、第1空洞Sp1の位置及び第1空洞Sp1の形状により、ローパスフィルタを形成することが可能である。よって、多層基板10kにおいて、ノイズの低減が図られる。また、信号導体層22の右端部の線幅を細くすることなく、信号導体層22の右端部をインダクタLとして機能させることができる。よって、信号導体層22の直流抵抗値の増大を抑制できる。 According to the multilayer substrate 10k, it is possible to form a low-pass filter depending on the position of the first cavity Sp1 and the shape of the first cavity Sp1. Therefore, noise can be reduced in the multilayer substrate 10k. In addition, the right end portion of the signal conductor layer 22 can function as the inductor L without reducing the line width of the right end portion of the signal conductor layer 22 . Therefore, an increase in the DC resistance value of the signal conductor layer 22 can be suppressed.
 また、多層基板10kでは、信号導体層22において層間接続導体v4より右に位置する部分(円Bにより囲まれた部分)がオープンスタブとして機能する。 In addition, in the multilayer substrate 10k, the portion of the signal conductor layer 22 located to the right of the interlayer connection conductor v4 (the portion surrounded by circle B) functions as an open stub.
(第14変形例)
 以下に、第14変形例に係る多層基板10lについて図面を参照しながら説明する。図22は、多層基板10lの断面図である。
(14th modification)
A multilayer substrate 10l according to the fourteenth modification will be described below with reference to the drawings. FIG. 22 is a cross-sectional view of the multilayer substrate 10l.
 多層基板10lは、複数の絶縁体層が絶縁体層19(第1絶縁体層)を更に含んでいる点において多層基板10と相違する。絶縁体層19(第1絶縁体層)は、信号導体層22(第2信号導体層)と第1空洞Sp1との間に位置している。本実施形態では、絶縁体層19は、絶縁体層16bと絶縁体層16cとの間に位置している。絶縁体層19は、上下方向に見て、第1空洞Sp1と重なっている。このような絶縁体層19は、絶縁体層16bと絶縁体層16cとを接着する接着層である。絶縁体層19(第1絶縁体層)の材料は、残余の絶縁体層16a~16cの材料よりエッチングされにくい。これにより、第1空洞Sp1は、絶縁体層19より下に位置し、絶縁体層19より上に位置しない。なお、絶縁体層19は、絶縁体層16aと絶縁体層16bとの間にも位置していてもよい。多層基板10lのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10lは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10l differs from the multilayer substrate 10 in that the plurality of insulator layers further includes an insulator layer 19 (first insulator layer). The insulator layer 19 (first insulator layer) is positioned between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1. In this embodiment, the insulator layer 19 is positioned between the insulator layer 16b and the insulator layer 16c. The insulator layer 19 overlaps the first cavity Sp1 when viewed in the vertical direction. Such an insulator layer 19 is an adhesive layer that bonds the insulator layer 16b and the insulator layer 16c. The material of insulator layer 19 (first insulator layer) is more difficult to etch than the material of the remaining insulator layers 16a-16c. As a result, the first cavity Sp1 is located below the insulator layer 19 and not above the insulator layer 19 . The insulator layer 19 may also be positioned between the insulator layers 16a and 16b. The rest of the structure of the multilayer substrate 10l is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10l can have the same effect as the multi-layer board 10. FIG.
 多層基板10lでは、絶縁体層19(第1絶縁体層)は、信号導体層22(第2信号導体層)と第1空洞Sp1との間に位置している。絶縁体層19(第1絶縁体層)の材料は、残余の絶縁体層16a~16cの材料よりエッチングされにくい。これにより、第1空洞Sp1は、絶縁体層19に形成されない。その結果、第1空洞Sp1の製造ばらつきが抑制される。絶縁体層19の材料は、例えば、薬液によりエッチングされにくいテフロン(登録商標)である。 In the multilayer substrate 10l, the insulator layer 19 (first insulator layer) is located between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1. The material of insulator layer 19 (first insulator layer) is more difficult to etch than the material of the remaining insulator layers 16a-16c. As a result, the first cavity Sp<b>1 is not formed in the insulator layer 19 . As a result, manufacturing variations of the first cavity Sp1 are suppressed. The material of the insulator layer 19 is, for example, Teflon (registered trademark) which is difficult to be etched by chemicals.
(第15変形例)
 以下に、第15変形例に係る多層基板10mについて図面を参照しながら説明する。図23は、多層基板10mの断面図である。
(Fifteenth Modification)
A multilayer substrate 10m according to a fifteenth modification will be described below with reference to the drawings. FIG. 23 is a cross-sectional view of the multilayer substrate 10m.
 多層基板10mは、ダミー導体層60を更に備えている点において多層基板10と相違する。ダミー導体層60は、信号導体層22(第2信号導体層)と第1空洞Sp1との間に位置している。本実施形態では、絶縁体層16dが、絶縁体層16bと絶縁体層16cとの間に積層されている。ダミー導体層60は、絶縁体層16dの下主面に位置している。ダミー導体層60は、上下方向に見て、第1空洞Sp1と重なっている。ダミー導体層60は、リファレンス電位や信号電位に接続されていない。そのため、ダミー導体層60の電位は、浮遊電位である。多層基板10mのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10mは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10m differs from the multilayer substrate 10 in that it further includes a dummy conductor layer 60. The dummy conductor layer 60 is located between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1. In this embodiment, the insulator layer 16d is laminated between the insulator layers 16b and 16c. The dummy conductor layer 60 is located on the lower main surface of the insulator layer 16d. The dummy conductor layer 60 overlaps the first cavity Sp1 when viewed in the vertical direction. The dummy conductor layer 60 is not connected to reference potential or signal potential. Therefore, the potential of the dummy conductor layer 60 is a floating potential. The rest of the structure of the multilayer substrate 10m is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10m can have the same effect as the multi-layer board 10. FIG.
 多層基板10mでは、ダミー導体層60は、信号導体層22(第2信号導体層)と第1空洞Sp1との間に位置している。ダミー導体層60は、殆どエッチングされない。これにより、第1空洞Sp1は、ダミー導体層60より上に形成されない。その結果、第1空洞Sp1の製造ばらつきが抑制される。 In the multilayer substrate 10m, the dummy conductor layer 60 is positioned between the signal conductor layer 22 (second signal conductor layer) and the first cavity Sp1. The dummy conductor layer 60 is hardly etched. Accordingly, the first cavity Sp1 is not formed above the dummy conductor layer 60. As shown in FIG. As a result, manufacturing variations of the first cavity Sp1 are suppressed.
 多層基板10mでは、ダミー導体層60が、上下方向に見て、層間接続導体v4と重なっている。 In the multilayer substrate 10m, the dummy conductor layer 60 overlaps the interlayer connection conductor v4 when viewed in the vertical direction.
(第16変形例)
 以下に、第16変形例に係る多層基板10nについて図面を参照しながら説明する。図24は、多層基板10nの断面図である。
(16th modification)
A multilayer substrate 10n according to the sixteenth modification will be described below with reference to the drawings. FIG. 24 is a cross-sectional view of the multilayer substrate 10n.
 多層基板10nは、保護層18bに貫通孔h50が設けられている点において多層基板10と相違する。貫通孔h50は、保護層18bを上下方向に貫通している。貫通孔h50は、上下方向に見て、貫通孔h1及び第1空洞Sp1と重なっている。これにより、貫通孔h50は、貫通孔h1及び第1空洞Sp1と繋がっている。多層基板10nのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10nは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10n differs from the multilayer substrate 10 in that the protective layer 18b is provided with a through hole h50. The through hole h50 vertically penetrates the protective layer 18b. The through hole h50 overlaps the through hole h1 and the first cavity Sp1 when viewed in the vertical direction. Thereby, the through hole h50 is connected to the through hole h1 and the first cavity Sp1. The rest of the structure of the multilayer substrate 10n is the same as that of the multilayer substrate 10, so the description is omitted. The multi-layer board 10n can have the same effects as the multi-layer board 10. FIG.
 多層基板10nによれば、第1空洞Sp1内の空気が熱によって膨張したときに、空気が貫通孔h1,h50を介して第1空洞Sp1外に出ることができる。これにより、第1リファレンス導体層26が絶縁体層16cから剥離することが抑制される。 According to the multilayer substrate 10n, when the air in the first cavity Sp1 expands due to heat, the air can exit the first cavity Sp1 through the through holes h1 and h50. This suppresses the separation of the first reference conductor layer 26 from the insulator layer 16c.
(第17変形例)
 以下に、第17変形例に係る多層基板10oについて図面を参照しながら説明する。図25は、多層基板10oの断面図である。
(17th modification)
A multilayer substrate 10o according to the seventeenth modification will be described below with reference to the drawings. FIG. 25 is a cross-sectional view of the multilayer substrate 10o.
 多層基板10oは、保護層18bの材料において多層基板10と相違する。保護層18bの材料は、通気性を有する多孔質材料である。多層基板10oのその他の構造は、多層基板10と同じであるので説明を省略する。多層基板10oは、多層基板10と同じ作用効果を奏することができる。 The multilayer substrate 10o differs from the multilayer substrate 10 in the material of the protective layer 18b. The material of the protective layer 18b is a porous material having air permeability. The rest of the structure of the multilayer substrate 10o is the same as that of the multilayer substrate 10, so the description is omitted. The multilayer substrate 10 o can have the same effects as the multilayer substrate 10 .
 多層基板10oによれば、第1空洞Sp1内の空気が熱によって膨張したときに、空気が通気性を有する保護層18bを介して第1空洞Sp1外に出ることができる。これにより、第1リファレンス導体層26が絶縁体層16cから剥離することが抑制される。また、第1空洞Sp1内に異物が侵入することが抑制される。 According to the multilayer substrate 10o, when the air in the first cavity Sp1 expands due to heat, the air can exit the first cavity Sp1 through the protective layer 18b having air permeability. This suppresses the separation of the first reference conductor layer 26 from the insulator layer 16c. In addition, entry of foreign matter into the first cavity Sp1 is suppressed.
(その他の実施形態)
 本発明に係る伝送線路は、多層基板10,10a~10oに限らず、その要旨の範囲内において変更可能である。なお、多層基板10,10a~10oの構成を任意に組み合わせてもよい。
(Other embodiments)
The transmission line according to the present invention is not limited to the multilayer substrates 10, 10a to 10o, and can be modified within the scope of the subject matter. The structures of the multilayer substrates 10, 10a to 10o may be combined arbitrarily.
 なお、多層基板10,10a~10oにおいて、第2リファレンス導体層24は、必須の構成要件ではない。 Note that the second reference conductor layer 24 is not an essential component in the multilayer substrates 10, 10a to 10o.
 なお、第1信号導体層は、高周波信号が伝送される導体層であればよい。従って、第1信号導体層は、長方形状を有する信号電極28bであってもよいし、線形状を有する信号導体層25であってもよい。また、第1信号導体層は、例えば、上下に並ぶ2個の層間接続導体の間に配置される小さな導体層であってもよい。 It should be noted that the first signal conductor layer may be a conductor layer through which high frequency signals are transmitted. Therefore, the first signal conductor layer may be the signal electrode 28b having a rectangular shape, or the signal conductor layer 25 having a linear shape. Also, the first signal conductor layer may be, for example, a small conductor layer disposed between two vertically aligned interlayer connection conductors.
 なお、高周波信号の周波数は、例えば、10MHz以上である。 Note that the frequency of the high-frequency signal is, for example, 10 MHz or higher.
 なお、多層基板10,10a~10oにおいて、第1空洞Sp1は、上下方向に見て、層間接続導体v1の一部分と重なっていてもよいし、層間接続導体v1の全体と重なっていてもよい。 In addition, in the multilayer substrates 10, 10a to 10o, the first cavity Sp1 may partially overlap the interlayer connection conductor v1 or may overlap the entire interlayer connection conductor v1 when viewed in the vertical direction.
 なお、多層基板10dにおいて、第1空洞Sp1は、第2領域A12に位置していてもよい。この場合、第2領域A12の薄型化を図ることができる。 In addition, in the multilayer substrate 10d, the first cavity Sp1 may be located in the second region A12. In this case, the thickness of the second region A12 can be reduced.
 なお、多層基板モジュール200aにおいて、多層基板10の上下方向の厚みは、多層基板110の上下方向の厚みより小さくてもよい。このように、上下方向の厚みの小さな多層基板110に第1空洞Sp1が設けられることにより、多層基板110の薄型化を図ることができる。 In the multilayer board module 200a, the thickness of the multilayer board 10 in the vertical direction may be smaller than the thickness of the multilayer board 110 in the vertical direction. Thus, by providing the first cavity Sp1 in the multilayer substrate 110 having a small thickness in the vertical direction, the thickness of the multilayer substrate 110 can be reduced.
 なお、保護層18a,18bは、必須の構成要件ではない。 It should be noted that the protective layers 18a and 18b are not essential constituent elements.
 なお、絶縁体層16a~16cの材料は、熱可塑性樹脂以外の樹脂であってもよいし、セラミックであってもよい。 The material of the insulator layers 16a to 16c may be resin other than thermoplastic resin, or may be ceramic.
 なお、多層基板10eは、層間接続導体を更に備えていてもよい。層間接続導体は、積層体12に設けられている。層間接続導体は、上下方向に見て、重複部分22cの前部と重なっている。層間接続導体は、絶縁体層16aを上下方向に貫通することにより、信号電極28b(第1信号導体層)及び信号導体層22(第2信号導体層)に接触している。これにより、信号電極28bと信号導体層22とが電気的に接続されている。この場合、第3空洞Sp3は、上下方向に見て、層間接続導体の少なくとも一部分と重なっている。ただし、第3空洞Sp3は、上下方向に見て、層間接続導体の全体と重なっていてもよい。 Note that the multilayer substrate 10e may further include interlayer connection conductors. An interlayer connection conductor is provided in the laminate 12 . The interlayer connection conductor overlaps the front portion of the overlapping portion 22c when viewed in the vertical direction. The interlayer connection conductor is in contact with the signal electrode 28b (first signal conductor layer) and the signal conductor layer 22 (second signal conductor layer) by vertically penetrating the insulator layer 16a. Thereby, the signal electrode 28b and the signal conductor layer 22 are electrically connected. In this case, the third cavity Sp3 overlaps at least a portion of the interlayer connection conductor when viewed in the vertical direction. However, the third cavity Sp3 may overlap the entire interlayer connection conductor when viewed in the vertical direction.
 なお、多層基板10eにおいて、層間接続導体と重ならない複数の第3空洞Sp3が積層体12に設けられていてもよい。 In addition, in the multilayer substrate 10e, the laminate 12 may be provided with a plurality of third cavities Sp3 that do not overlap the interlayer connection conductors.
 なお、多層基板10eにおいて、第3空洞Sp3は、上下方向において、信号電極28b又は信号導体層22と第1リファレンス導体層26との間に位置していればよい。 In addition, in the multilayer substrate 10e, the third cavity Sp3 may be positioned between the signal electrode 28b or the signal conductor layer 22 and the first reference conductor layer 26 in the vertical direction.
1:電子機器
10,10a~10o,110:多層基板
12:積層体
16a~16e,19:絶縁体層
18a,18b:保護層
22:信号導体層
22a:線状部分
22b,22c:重複部分
23a,23b:リファレンス導体層
24:第2リファレンス導体層
25:信号導体層
26:第1リファレンス導体層
28a,28b,128b:信号電極
60:ダミー導体層
200,200a:多層基板モジュール
300:導電性接合材
A11:第1領域
A12:第2領域
Sp1,Sp101,Sp11:第1空洞
Sp2:第2空洞
Sp3:第3空洞
h1,h1a~h1d,h2,h50:貫通孔
v1~v4:層間接続導体
1: Electronic devices 10, 10a to 10o, 110: Multilayer substrate 12: Laminates 16a to 16e, 19: Insulator layers 18a, 18b: Protective layer 22: Signal conductor layer 22a: Linear portions 22b, 22c: Overlapping portion 23a , 23b: reference conductor layer 24: second reference conductor layer 25: signal conductor layer 26: first reference conductor layer 28a, 28b, 128b: signal electrode 60: dummy conductor layers 200, 200a: multilayer board module 300: conductive joint Material A11: First region A12: Second regions Sp1, Sp101, Sp11: First cavity Sp2: Second cavity Sp3: Third cavity h1, h1a to h1d, h2, h50: Through holes v1 to v4: Interlayer connection conductor

Claims (16)

  1.  上方向又は下方向の一方が第1方向であり、上方向又は下方向の他方が第2方向であり、
     多層基板は、
     複数の絶縁体層が上下方向に積層された構造を有している積層体と、
     前記積層体に設けられている第1信号導体層と、
     前記積層体に設けられており、前記第1信号導体層より前記第2方向に位置している第2信号導体層であって、上下方向に見て、前記第1信号導体層と重なる重複部分を含んでいる第2信号導体層と、
     前記積層体に設けられており、かつ、上下方向に見て、前記重複部分と重なっており、かつ、前記絶縁体層を上下方向に貫通することにより、前記第1信号導体層及び前記第2信号導体層に接触している層間接続導体と、
     前記積層体に設けられており、かつ、前記第2信号導体層より前記第2方向に位置し、かつ、上下方向に見て、前記重複部分の少なくとも一部分と重なっている第1リファレンス導体層と、
     を備えており、
     前記第1信号導体層、前記第2信号導体層及び前記層間接続導体には、高周波信号が伝送され、
     前記積層体には、前記絶縁体層が存在しない第1空洞が設けられており、
     前記第1空洞は、上下方向に見て、前記層間接続導体の少なくとも一部分と重なり、かつ、上下方向において、前記第2信号導体層と前記第1リファレンス導体層との間に位置している、
     多層基板。
    One of the upward direction and the downward direction is the first direction, the other of the upward direction and the downward direction is the second direction,
    A multilayer board is
    a laminate having a structure in which a plurality of insulator layers are stacked vertically;
    a first signal conductor layer provided in the laminate;
    A second signal conductor layer provided in the laminate and located in the second direction from the first signal conductor layer, the overlapping portion overlapping the first signal conductor layer when viewed in the vertical direction a second signal conductor layer comprising
    provided in the laminate, overlapping the overlapping portion when viewed in the vertical direction, and penetrating the insulating layer in the vertical direction to form the first signal conductor layer and the second signal conductor layer; an interlayer connection conductor in contact with the signal conductor layer;
    a first reference conductor layer provided in the laminate, positioned in the second direction from the second signal conductor layer, and overlapping at least a portion of the overlapping portion when viewed in the vertical direction; ,
    and
    A high frequency signal is transmitted to the first signal conductor layer, the second signal conductor layer and the interlayer connection conductor,
    The laminate is provided with a first cavity in which the insulator layer does not exist,
    The first cavity overlaps at least a portion of the interlayer connection conductor when viewed in the vertical direction, and is positioned between the second signal conductor layer and the first reference conductor layer in the vertical direction.
    multilayer board.
  2.  前記第1リファレンス導体層を上下方向に貫通する1以上の貫通孔が前記第1リファレンス導体層に設けられており、
     前記1以上の貫通孔は、前記第1空洞と繋がっている、
     請求項1に記載の多層基板。
    one or more through-holes vertically penetrating the first reference conductor layer are provided in the first reference conductor layer,
    The one or more through holes are connected to the first cavity,
    The multilayer substrate according to claim 1.
  3.  前記1以上の貫通孔の数は、複数である、
     請求項2に記載の多層基板。
    The number of the one or more through-holes is plural,
    The multilayer substrate according to claim 2.
  4.  前記多層基板は、
     前記積層体に設けられており、かつ、前記第2信号導体層より前記第1方向に位置している第2リファレンス導体層を、
     更に備えている、
     請求項1ないし請求項3のいずれかに記載の多層基板。
    The multilayer substrate is
    a second reference conductor layer provided in the laminate and positioned in the first direction from the second signal conductor layer,
    is further equipped with
    4. The multilayer substrate according to any one of claims 1 to 3.
  5.  前記第2リファレンス導体層は、前記第1信号導体層より前記第1方向に位置しており、かつ、上下方向に見て、前記重複部分の少なくとも一部分と重なっており、
     前記積層体には、前記絶縁体層が存在しない第2空洞が設けられており、
     前記第2空洞は、上下方向に見て、前記層間接続導体の少なくとも一部分と重なり、かつ、上下方向において、前記第1信号導体層と前記第2リファレンス導体層との間に位置している、
     請求項4に記載の多層基板。
    the second reference conductor layer is positioned in the first direction from the first signal conductor layer and overlaps at least a portion of the overlapping portion when viewed in the vertical direction;
    The laminate is provided with a second cavity in which the insulator layer does not exist,
    The second cavity overlaps at least a portion of the interlayer connection conductor when viewed in the vertical direction, and is positioned between the first signal conductor layer and the second reference conductor layer in the vertical direction.
    The multilayer substrate according to claim 4.
  6.  前記積層体は、上下方向に並ぶ第1主面及び第2主面を有しており、
     前記第1主面は、前記第2主面より前記第1方向に位置しており、
     前記第1信号導体層は、前記第1主面に位置し、かつ、前記高周波信号が入出力する信号電極である、
     請求項1ないし請求項4のいずれかに記載の多層基板。
    The laminate has a first main surface and a second main surface arranged in the vertical direction,
    The first main surface is located in the first direction from the second main surface,
    The first signal conductor layer is a signal electrode located on the first main surface and for inputting and outputting the high-frequency signal,
    The multilayer substrate according to any one of claims 1 to 4.
  7.  前記積層体は、第1領域及び第2領域を有しており、
     前記第1領域の曲げ剛性は、前記第2領域の曲げ剛性より高く、
     前記第1空洞は、前記第1領域に位置している、
     請求項1ないし請求項6のいずれかに記載の多層基板。
    The laminate has a first region and a second region,
    the bending rigidity of the first region is higher than the bending rigidity of the second region;
    the first cavity is located in the first region;
    The multilayer substrate according to any one of claims 1 to 6.
  8.  前記第1空洞は、前記第2信号導体層に接している、
     請求項1ないし請求項7のいずれかに記載の多層基板。
    the first cavity is in contact with the second signal conductor layer;
    A multilayer substrate according to any one of claims 1 to 7.
  9.  前記第1空洞は、前記層間接続導体に接している、
     請求項1ないし請求項8のいずれかに記載の多層基板。
    the first cavity is in contact with the interlayer connection conductor;
    The multilayer substrate according to any one of claims 1 to 8.
  10.  前記第2信号導体層は、線形状を有する線状部分を含んでおり、
     前記重複部分の幅は、前記線状部分の幅より大きく、
     前記第1空洞は、上下方向に見て、前記重複部分及び前記線状部分に重なっている、
     請求項1ないし請求項8のいずれかに記載の多層基板。
    The second signal conductor layer includes a linear portion having a linear shape,
    The width of the overlapping portion is larger than the width of the linear portion,
    The first cavity overlaps the overlapping portion and the linear portion when viewed in the vertical direction,
    The multilayer substrate according to any one of claims 1 to 8.
  11.  前記複数の絶縁体層は、前記第2信号導体層と前記第1空洞との間に位置する第1絶縁体層を含んでおり、
     前記第1絶縁体層の材料は、残余の絶縁体層の材料よりエッチングされにくい、
     請求項1ないし請求項10のいずれかに記載の多層基板。
    the plurality of insulator layers including a first insulator layer positioned between the second signal conductor layer and the first cavity;
    the material of the first insulator layer is less susceptible to etching than the material of the remaining insulator layers;
    A multilayer substrate according to any one of claims 1 to 10.
  12.  前記多層基板は、
     前記第2信号導体層と前記第1空洞との間に位置するダミー導体層を、
     更に備えている、
     請求項1ないし請求項11のいずれかに記載の多層基板。
    The multilayer substrate is
    a dummy conductor layer located between the second signal conductor layer and the first cavity,
    is further equipped with
    A multilayer substrate according to any one of claims 1 to 11.
  13.  前記多層基板は、
     前記第1リファレンス導体層の第2方向に積層されている保護層を、
     更に備えている、
     請求項1ないし請求項12のいずれかに記載の多層基板。
    The multilayer substrate is
    a protective layer laminated in the second direction of the first reference conductor layer,
    is further equipped with
    13. The multilayer substrate according to any one of claims 1 to 12.
  14.  前記積層体には、前記絶縁体層が存在しない第3空洞が設けられており、
     前記第3空洞は、上下方向に見て、層間接続導体と重ならず、かつ、上下方向において、前記第1信号導体層又は第2信号導体層と前記第1リファレンス導体層との間に位置している、
     請求項1ないし請求項13のいずれかに記載の多層基板。
    The laminate is provided with a third cavity in which the insulator layer does not exist,
    The third cavity does not overlap the interlayer connection conductor when viewed in the vertical direction, and is positioned between the first signal conductor layer or the second signal conductor layer and the first reference conductor layer in the vertical direction. doing,
    A multilayer substrate according to any one of claims 1 to 13.
  15.  請求項1ないし請求項14のいずれかに記載の構造を有する第1多層基板と、
     請求項1ないし請求項14のいずれかに記載の構造を有する第2多層基板と、
     を備えている多層基板モジュールであって、
     前記第1多層基板の前記第1信号導体層は、前記第2多層基板の前記第1信号導体層に導電性接合材により固定されており、
     前記第1空洞は、上下方向に見て、前記導電性接合材と重なっている、
     多層基板モジュール。
    a first multilayer substrate having the structure according to any one of claims 1 to 14;
    a second multilayer substrate having the structure according to any one of claims 1 to 14;
    A multilayer board module comprising:
    The first signal conductor layer of the first multilayer substrate is fixed to the first signal conductor layer of the second multilayer substrate with a conductive bonding material,
    The first cavity overlaps the conductive bonding material when viewed in the vertical direction.
    Multilayer board module.
  16.  請求項1ないし請求項14のいずれかに記載の多層基板を、
     備えている、
     電子機器。
    The multilayer substrate according to any one of claims 1 to 14,
    equipped with
    Electronics.
PCT/JP2022/022909 2021-06-25 2022-06-07 Multilayer substrate, multilayer substrate module, and electronic device WO2022270294A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04116892A (en) * 1990-09-06 1992-04-17 Fujitsu Ltd Multilayer ceramic board and its manufacture
JPH04221890A (en) * 1990-12-25 1992-08-12 Fujitsu Ltd Multilayer ceramic board and manufacture thereof
WO2017110389A1 (en) * 2015-12-22 2017-06-29 株式会社デンソー Multilayer substrate and multilayer substrate manufacturing method
WO2019131286A1 (en) * 2017-12-28 2019-07-04 株式会社村田製作所 Multilayer substrate and transmission line device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04116892A (en) * 1990-09-06 1992-04-17 Fujitsu Ltd Multilayer ceramic board and its manufacture
JPH04221890A (en) * 1990-12-25 1992-08-12 Fujitsu Ltd Multilayer ceramic board and manufacture thereof
WO2017110389A1 (en) * 2015-12-22 2017-06-29 株式会社デンソー Multilayer substrate and multilayer substrate manufacturing method
WO2019131286A1 (en) * 2017-12-28 2019-07-04 株式会社村田製作所 Multilayer substrate and transmission line device

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