WO2022269408A1 - 表示装置、表示装置の作製方法、表示モジュール、及び電子機器 - Google Patents
表示装置、表示装置の作製方法、表示モジュール、及び電子機器 Download PDFInfo
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Definitions
- One embodiment of the present invention relates to a display device.
- One aspect of the present invention relates to an imaging device.
- One embodiment of the present invention relates to a display device having an imaging function.
- One aspect of the present invention relates to a display module.
- One aspect of the present invention relates to an electronic device.
- one embodiment of the present invention is not limited to the above technical field.
- Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input/output devices, and driving methods thereof. , or methods for producing them, can be mentioned as an example.
- a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
- display devices are required to have high definition in order to display high-resolution images.
- information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers)
- display devices are required to have low power consumption in addition to high definition.
- a display device that has various functions in addition to displaying images, such as a function as a touch sensor and a function of capturing a fingerprint for authentication.
- a light-emitting element (also referred to as an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon can easily be made thin and light, can respond quickly to an input signal, and uses a DC constant voltage power source. It is applied to display devices because it can be driven by
- Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied.
- Non-Patent Document 1 also discloses a method for manufacturing organic optoelectronic devices using standard UV photolithography.
- Another object of one embodiment of the present invention is to provide a display device that functions as a touch sensor.
- an object of one embodiment of the present invention is to provide a highly functional display device.
- an object of one embodiment of the present invention is to provide a highly reliable display device or imaging device.
- an object of one embodiment of the present invention is to provide a display device or an imaging device having a novel structure.
- Another object of one embodiment of the present invention is to provide an electronic device including the display device or the imaging device.
- Another object of one embodiment of the present invention is to provide a method for manufacturing the display device, the imaging device, or the electronic device.
- a first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, and a second light-emitting element adjacent to the second light-emitting element are provided over a substrate having a property of transmitting visible light.
- the first light emitting element has a first pixel electrode, a first light emitting layer on the first pixel electrode, and a common electrode on the first light emitting layer
- a second light emitting element has a second pixel electrode, a second light-emitting layer on the second pixel electrode, and a common electrode on the second light-emitting layer
- the light receiving element includes the third pixel electrode and the third pixel electrode.
- the common electrode is , which is transparent to visible light, and the transmittance of light of a specific wavelength, which is at least part of the wavelengths of visible light, in the first organic layer is such that the second organic layer has a specific It is a display device with a transmittance lower than the wavelength of light.
- a first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, and a second light-emitting element are provided over a substrate having a property of transmitting visible light.
- the first light emitting element has a first pixel electrode, a first light emitting layer on the first pixel electrode, a common electrode on the first light emitting layer, and a second
- the light-emitting element has a second pixel electrode, a second light-emitting layer on the second pixel electrode, and a common electrode on the second light-emitting layer.
- a common electrode is provided on the organic layer of , the common electrode has translucency to visible light, and the light-receiving element includes a third pixel electrode and a photoelectric conversion layer on the third pixel electrode. and a common electrode on the photoelectric conversion layer, wherein the transmittance of at least one of red, green, and blue light in the first organic layer is lower than the transmittance in the second organic layer. It is a display device.
- the first and second pixel electrodes may transmit visible light.
- the ends of the first to third pixel electrodes have tapered shapes
- the first light-emitting layer covers the ends of the first pixel electrodes
- the second light-emitting layer may cover the edge of the second pixel electrode and the edge of the third pixel electrode.
- the first light-emitting layer has a first tapered portion between the end of the first pixel electrode and the second organic layer
- the second light-emitting layer has a second a second tapered portion between an end portion of the second pixel electrode and the second organic layer
- the photoelectric conversion layer includes an end portion of the third pixel electrode and the first organic layer
- the first carrier-transporting layer on the first light-emitting layer, the second carrier-transporting layer on the second light-emitting layer, and the third carrier-transporting layer on the photoelectric conversion layer are may have.
- the common layer on the first carrier-transporting layer, the second carrier-transporting layer, the third carrier-transporting layer, the first organic layer, and the second organic layer and a common electrode on the layer is a common electrode on the layer.
- the common layer may have a carrier injection layer.
- a display module including the display device of one embodiment of the present invention and at least one of a connector and an integrated circuit is also one embodiment of the present invention.
- An electronic device including the display module of one aspect of the present invention and at least one of a battery, a camera, a speaker, and a microphone is also an aspect of the present invention.
- a first pixel electrode, a second pixel electrode, and a third pixel electrode are formed over a substrate having a property of transmitting visible light.
- a first light-emitting film is formed on the first light-emitting film
- a first sacrificial film is formed, the first light-emitting film, and the first sacrificial film are formed.
- a first light-emitting layer and a first sacrificial layer on the first light-emitting layer are formed, and the substrate, the second pixel electrode, the third pixel electrode, and the forming a second light-emitting film on the first sacrificial layer, forming a second sacrificial film on the second light-emitting film, and processing the second light-emitting film and the second sacrificial film; to form a second light-emitting layer adjacent to the first light-emitting layer and a second sacrificial layer on the second light-emitting layer;
- a photoelectric conversion film is formed on the upper and second sacrificial layers, a third sacrificial film is formed on the photoelectric conversion film, and the photoelectric conversion film and the third sacrificial film are processed to obtain a third sacrificial layer.
- a photoelectric conversion layer adjacent to the second light-emitting layer and a third sacrificial layer on the photoelectric conversion layer, and forming a first organic layer between the second light-emitting layer and the photoelectric conversion layer; formed between the first light-emitting layer and the second light-emitting layer, the transmittance of light of a specific wavelength, which is at least part of the wavelengths of visible light, in the first organic layer forming a second organic layer having a higher transmittance than the wavelength of light; removing at least part of the first to third sacrificial layers;
- a common electrode having a property of transmitting visible light is formed over a first organic layer and a second organic layer.
- a first pixel electrode, a second pixel electrode, and a third pixel electrode are formed over a substrate having a property of transmitting visible light.
- a first light-emitting film is formed on the first light-emitting film
- a first sacrificial film is formed, the first light-emitting film, and the first sacrificial film are formed.
- a first light-emitting layer and a first sacrificial layer on the first light-emitting layer are formed, and the substrate, the second pixel electrode, the third pixel electrode, and the forming a second light-emitting film on the first sacrificial layer, forming a second sacrificial film on the second light-emitting film, and processing the second light-emitting film and the second sacrificial film; to form a second light-emitting layer adjacent to the first light-emitting layer and a second sacrificial layer on the second light-emitting layer;
- a photoelectric conversion film is formed on the upper and second sacrificial layers, a third sacrificial film is formed on the photoelectric conversion film, and the photoelectric conversion film and the third sacrificial film are processed to obtain a third sacrificial layer.
- a photoelectric conversion layer adjacent to the second light-emitting layer and a third sacrificial layer on the photoelectric conversion layer, and forming a first organic layer between the second light-emitting layer and the photoelectric conversion layer; a first organic layer having a higher transmittance of at least one of red, green, and blue light than the transmittance of the first organic layer, between the first light emitting layer and the second light emitting layer; forming two organic layers, removing at least part of the first to third sacrificial layers, forming a first light-emitting layer, a second light-emitting layer, a photoelectric conversion layer, the first organic layer, and a method for manufacturing a display device in which a common electrode having a property of transmitting visible light is formed over the second organic layer.
- the first and second pixel electrodes may transmit visible light.
- a protective film is formed over the first to third sacrificial layers and the first organic layer, and an organic film is formed over the protective film.
- the second organic layer may be formed by processing the organic film.
- the protective layer under the second organic layer may be formed by processing the protective film.
- the first light-emitting layer, the second light-emitting layer, the photoelectric conversion layer, the first organic layer, and A common layer may be formed on the second organic layer, and a common electrode may be formed on the common layer.
- the common layer may have a carrier injection layer.
- a film functioning as a first carrier transport layer is formed on the first light emitting film, and the first By processing the light-emitting film, the film functioning as the first carrier-transporting layer, and the first sacrificial film, the first light-emitting layer, the first carrier-transporting layer on the first light-emitting layer, and the first a first sacrificial layer on the carrier transport layer; By forming a film functioning as a transport layer and processing a second light-emitting film, a film functioning as a second carrier-transporting layer, and a second sacrificial film, a second light-emitting layer and a second light-emitting layer are formed.
- a second carrier transport layer on the layer and a second sacrificial layer on the second carrier transport layer are formed, and after forming the photoelectric conversion film and after forming the third sacrificial film, photoelectric conversion A film that functions as a third carrier transport layer is formed on the film, and the photoelectric conversion layer, the film that functions as the third carrier transport layer, and the third sacrificial film are processed to form a photoelectric conversion layer, A third carrier-transporting layer on the photoelectric conversion layer and a third sacrificial layer on the third carrier-transporting layer may be formed.
- the first to third pixel electrodes are formed to have tapered ends, and the first light-emitting film is processed to cover the ends of the first pixel electrodes.
- forming a light-emitting layer of the second light-emitting film forming a second light-emitting layer so as to cover the end of the second pixel electrode by processing the second light-emitting film, and processing the photoelectric conversion film of the third pixel electrode.
- a photoelectric conversion layer may be formed to cover the ends.
- the first light-emitting film is processed so as to have the first tapered portion between the end portion of the first pixel electrode and the end portion of the first sacrificial layer. is formed, and the second light emitting film is processed so as to have a second tapered portion between the end portion of the second pixel electrode and the end portion of the second sacrificial layer. 2 light-emitting layers are formed, and the photoelectric conversion film is processed so as to have a third taper portion between the end portion of the third pixel electrode and the end portion of the third sacrificial layer. Layers may be formed.
- a display device or an imaging device capable of imaging with high sensitivity can be provided.
- a high-definition display device or imaging device can be provided.
- a display device or an imaging device with a high aperture ratio can be provided.
- a display device can be provided that allows the user to view the rear view.
- a display device with high light extraction efficiency can be provided.
- a display device with high display quality can be provided.
- a display device with which biometric information such as a fingerprint can be obtained can be provided.
- a display device functioning as a touch sensor can be provided.
- a highly functional display device can be provided.
- a highly reliable display device or imaging device can be provided.
- a display device or an imaging device with a novel structure can be provided.
- one embodiment of the present invention can provide an electronic device including the display device or the imaging device.
- one embodiment of the present invention can provide a method for manufacturing the display device, the imaging device, or the electronic device.
- FIG. 1A is a top view showing a configuration example of a display device.
- 1B, 1C1, and 1C2 are cross-sectional views showing configuration examples of display devices.
- FIG. 2 is a cross-sectional view showing a configuration example of a display device.
- 3A and 3B are cross-sectional views showing configuration examples of the display device.
- 4A and 4B are cross-sectional views showing configuration examples of the display device.
- 5A, 5B1, and 5B2 are cross-sectional views showing configuration examples of the display device.
- 6A to 6E are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 7A to 7C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 8A to 8C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 9A to 9D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 10A to 10D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 11A and 11B are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 12A to 12D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 13A to 13C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 14A and 14B are cross-sectional views illustrating an example of a method for manufacturing a display device.
- FIG. 15 is a perspective view showing a configuration example of a display device.
- FIG. 16A is a cross-sectional view showing a configuration example of a display device.
- 16B1 and 16B2 are cross-sectional views illustrating configuration examples of transistors.
- FIG. 17 is a cross-sectional view showing a configuration example of a display device.
- FIG. 18 is a cross-sectional view showing a configuration example of a display device.
- FIG. 19 is a cross-sectional view showing a configuration example of a display device.
- 20A to 20D are cross-sectional views showing configuration examples of display devices.
- FIG. 21 is a perspective view showing a configuration example of a display device.
- FIG. 22 is a cross-sectional view showing a configuration example of a display device.
- FIG. 21 is a perspective view showing a configuration example of a display device.
- FIG. 23 is a cross-sectional view showing a configuration example of a display device.
- FIG. 24 is a cross-sectional view showing a configuration example of a display device.
- FIG. 25 is a cross-sectional view showing a configuration example of a display device.
- 26A and 26B are top views showing configuration examples of the display panel.
- 27A to 27C are top views showing configuration examples of the display panel.
- 28A and 28B are cross-sectional views showing configuration examples of the display panel.
- 29A, 29B, and 29D are cross-sectional views showing examples of display devices.
- 29C and 29E are diagrams showing examples of images.
- 29F to 29H are top views showing examples of pixels.
- FIG. 30A is a cross-sectional view showing a configuration example of a display device.
- FIG. 31A is a cross-sectional view showing a configuration example of a display device.
- 31B to 31I are top views showing examples of pixels.
- 32A and 32B are diagrams showing configuration examples of a display device.
- 33A to 33G are diagrams showing configuration examples of display devices.
- 34A to 34F are diagrams showing examples of pixels.
- 34G and 34H are diagrams showing examples of pixel circuit diagrams.
- 35A to 35J are diagrams showing configuration examples of display devices.
- 36A and 36B are diagrams showing application examples of the display device.
- FIG. 37 is a diagram showing an application example of the display device.
- FIG. 38 is a diagram showing an application example of the display device.
- film and “layer” can be interchanged depending on the case or situation.
- conductive layer or “insulating layer” may be interchangeable with the terms “conductive film” or “insulating film.”
- an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer) or a laminate including a light-emitting layer.
- the PD layer indicates a layer provided between a pair of electrodes of a light receiving element and containing at least a photoelectric conversion material (also referred to as an active layer or a photoelectric conversion layer) or a laminate containing the active layer.
- a display panel which is one mode of a display device, has a function of displaying (outputting) an image, for example, on a display surface. Therefore, the display panel is one aspect of the output device.
- the substrate of the display panel is attached with a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or an IC is sometimes called a display panel module, a display module, or simply a display panel.
- a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package)
- an IC is sometimes called a display panel module, a display module, or simply a display panel.
- One embodiment of the present invention is a display device in which a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device) are provided over a substrate.
- a light-emitting element has a pair of electrodes and an EL layer therebetween.
- the light receiving element has a pair of electrodes and a PD layer therebetween.
- the EL layer has at least a light-emitting layer, preferably a plurality of layers.
- the EL layer preferably has, for example, a light-emitting layer and a carrier-transporting layer (hole-transporting layer or electron-transporting layer) on the light-emitting layer.
- the PD layer has at least an active layer (also referred to as a photoelectric conversion layer), and preferably has a plurality of layers.
- the PD layer preferably has, for example, an active layer and a carrier transport layer (hole transport layer or electron transport layer) on the active layer.
- the light-emitting element is preferably an organic EL element (organic electroluminescence element).
- the light receiving element is preferably an organic photodiode (organic photoelectric conversion element).
- the display device preferably has two or more light-emitting elements that emit different colors.
- Light-emitting elements that emit different colors have EL layers containing different materials.
- a full-color display device can be realized by including three types of light-emitting elements that emit red (R), green (G), and blue (B) light.
- One embodiment of the present invention functions as an imaging device because an image can be captured with a plurality of light-receiving elements. At this time, the light emitting element can be used as a light source for imaging. Further, one embodiment of the present invention can display an image with a plurality of light-emitting elements, and therefore functions as a display device. Therefore, one embodiment of the present invention can be referred to as a display device having an imaging function or an imaging device having a display function.
- the display device in the display device of one embodiment of the present invention, light-receiving elements in addition to light-emitting elements are arranged in matrix in the display portion. Therefore, the display section has a function as a light receiving section in addition to the function of displaying an image. Since an image can be captured by a plurality of light receiving elements provided in the display portion, the display device can function as an image sensor or a touch sensor. That is, the display device of one embodiment of the present invention can capture an image using the display portion, for example. Alternatively, the display device of one embodiment of the present invention can detect that an object approaches the display portion or touches the display portion.
- the light-emitting element provided in the display unit can be used as a light source when receiving light, there is no need to provide a light source separate from the display device, and a highly functional display can be achieved without increasing the number of electronic components. device can be realized.
- touch sensor may include a “non-contact touch sensor” that has a function of detecting an object that is in proximity but not in contact with it.
- the light-receiving element when light emitted from a light-emitting element included in a display portion is reflected by an object, the light-receiving element can detect the reflected light. can be detected.
- the display device of one embodiment of the present invention can capture an image of a fingerprint or a palmprint when a finger, palm, or the like is brought into contact with the display portion. Therefore, an electronic device including the display device of one embodiment of the present invention can perform biometric authentication using a captured fingerprint or palmprint image. As a result, there is no need to separately provide an imaging device for fingerprint authentication or palm print authentication, and the number of parts of the electronic device can be reduced.
- the light-receiving elements are arranged in a matrix on the display section, it is possible to pick up an image of a fingerprint or a palm print anywhere on the display section, realizing a highly convenient electronic device. can.
- an EL layer and a PD layer are processed into fine patterns without using a shadow mask such as a metal mask. Accordingly, a display device having high functionality, high definition, and a large aperture ratio can be realized. Further, since the EL layers can be separately formed, a display device with extremely vivid, high contrast, and high display quality can be realized.
- the EL layer and the PD layer are formed separately, spaces are formed between the adjacent EL layers and between the adjacent EL layer and the PD layer.
- the common electrode may enter the space and break in the common electrode.
- the common electrode may be locally thinned in the space, increasing electrical resistance. Therefore, by filling the space with an insulating layer, the above defects can be suppressed and a highly reliable display device can be realized.
- the substrate provided in the display device is a substrate that transmits visible light
- an insulating layer that has high transparency to visible light is provided in the space
- the insulating layer is exposed to outside light. can be penetrated.
- a pair of electrodes included in the light-emitting element are electrodes that transmit visible light
- external light can pass through the light-emitting element.
- the user of the display device can see the scenery behind the display device as a real image.
- an insulating layer having high visible light-transmitting properties is provided in the space between the EL layers, and the space between the EL layer and the PD layer is provided with an insulating layer that transmits visible light.
- An insulating layer with high light shielding properties is provided. Accordingly, with the display device of one embodiment of the present invention, the user of the display device can view the rear view as a real image, and a decrease in imaging sensitivity due to stray light can be suppressed.
- the insulating layer provided in the space can be, for example, an organic layer, such as a resin.
- the insulating layer provided in the space between the EL layers can be made of photosensitive resin such as photoresist.
- the insulating layer provided in the space between the EL layer and the PD layer can be a colored layer (also referred to as a color filter), for example, a color resist (also referred to as a color filter photosensitive resist).
- the insulating layer provided in the space between the EL layers is a photoresist
- the insulating layer provided in the space between the EL layer and the PD layer is a color resist, thereby applying the photoresist or the color resist.
- the insulating layer can be formed in the space only by the steps of exposure and development.
- FIG. 1A shows a schematic top view of display device 100 .
- the display device 100 has a plurality of red light emitting elements 130R, green light emitting elements 130G, blue light emitting elements 130B, and light receiving elements 150, respectively.
- the light emitting region of each light emitting element is labeled with R, G, or B.
- the symbol S is attached to the light receiving area of the light receiving element.
- the light emitting element 130 when describing matters common to the light emitting elements 130R, 130G, and 130B, the light emitting element 130 may be referred to.
- Other constituent elements distinguished by alphabets may also be described using reference numerals with alphabets omitted when describing matters common to them.
- the light emitting element 130R, the light emitting element 130G, the light emitting element 130B, and the light receiving element 150 are arranged in a matrix.
- FIG. 1A shows a configuration in which two elements are alternately arranged in one direction.
- the arrangement method of the light-emitting element and the light-receiving element is not limited to this, and an arrangement method such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may be applied. An array or the like can also be used.
- an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
- OLED Organic Light Emitting Diode
- QLED Quantum-dot Light Emitting Diode
- light-emitting substances that EL devices have include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), inorganic compounds (for example, quantum dot materials), and substances that exhibit heat-activated delayed fluorescence (heat-activated delayed fluorescent (thermally activated delayed fluorescence: TADF) material) and the like.
- the light receiving element 150 for example, a pn-type or pin-type photodiode (also referred to as PhotoDiode, PD) can be used.
- the light receiving element 150 functions as a photoelectric conversion element that detects light incident on the light receiving element 150 and generates charges. The amount of charge generated by the photoelectric conversion element is determined according to the amount of incident light.
- an organic photodiode having a layer containing an organic compound as the light receiving element 150 .
- Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
- the display device 100 Since the display device 100 has the light receiving element 150, the display device 100 can capture an image. Therefore, the display device 100 can function as an image sensor or a touch sensor. That is, the display device 100 can capture an image, for example, on the display unit. Alternatively, the display device 100 can detect that an object approaches the display unit or that the object touches the display unit. Furthermore, since the light emitting element 130 can be used as a light source for light reception, there is no need to provide a light source separately from the display device 100 . Therefore, the display device 100 can be a highly functional display device without increasing the number of electronic components.
- the display device 100 when the light emitted from the light emitting element 130 is reflected by an object, the light receiving element 150 can detect the reflected light. Therefore, the display device 100 can perform imaging even in a dark environment, and can detect touch (including non-contact) of an object.
- the display device 100 can capture an image of a fingerprint or a palm print when a finger, palm, or the like is brought into contact with the display unit. Therefore, an electronic device having the display device 100 can perform biometric authentication using a captured fingerprint or palmprint image. As a result, there is no need to separately provide an imaging device for fingerprint authentication or palm print authentication, and the number of parts of the electronic device can be reduced. Further, since the light-receiving elements 150 are arranged in a matrix in the display portion, it is possible to pick up an image of a fingerprint or a palm print anywhere on the display portion. Therefore, an electronic device having the display device 100 can be a highly convenient electronic device.
- FIG. 1A shows the common electrode 115 of the light emitting element 130R, the light emitting element 130G, the light emitting element 130B, and the light receiving element 150, and the connection electrode 113 electrically connected to the common electrode 115.
- FIG. 1A shows the common electrode 115 of the light emitting element 130R, the light emitting element 130G, the light emitting element 130B, and the light receiving element 150, and the connection electrode 113 electrically connected to the common electrode 115.
- connection electrode 113 A potential to be supplied to the common electrode 115 is applied to the connection electrode 113 .
- the connection electrodes 113 are provided outside the display section in which the light emitting elements 130 and the light receiving elements 150 are arranged.
- connection electrodes 113 can be provided along the outer periphery of the display portion. For example, it may be provided along one side of the outer periphery of the display section, or may be provided over two or more sides of the outer periphery of the display section. That is, when the top surface shape of the display portion is rectangular, the top surface shape of the connection electrode 113 can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), frame-shaped, or the like.
- FIG. 1B is a schematic cross-sectional view corresponding to the dashed-dotted line A1-A2 in FIG. 1A.
- FIG. 1B shows a substrate 101, an insulating layer 103 on the substrate 101, and a light emitting element 130R, a light emitting element 130G, a light emitting element 130B, and a light receiving element 150 on the insulating layer 103.
- FIG. 1B shows a substrate 101, an insulating layer 103 on the substrate 101, and a light emitting element 130R, a light emitting element 130G, a light emitting element 130B, and a light receiving element 150 on the insulating layer 103.
- the substrate 101 can be a substrate that transmits visible light.
- Substrate 101 can be, for example, a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate.
- the insulating layer 103 can function as an interlayer insulating layer.
- a layer including, for example, a transistor can be provided over the substrate 101 and the insulating layer 103 can be provided to cover the layer.
- the insulating layer 103 is preferably planarized, but may not be planarized.
- the insulating layer 103 may have recesses between adjacent light emitting elements 130 . Also, the insulating layer 103 may have a recess between the adjacent light emitting element 130 and light receiving element 150 . Note that the insulating layer 103 may not have recesses between adjacent light emitting elements 130 and between adjacent light emitting elements 130 and light receiving elements 150 .
- the light emitting element 130R has a pixel electrode 111R, an EL layer 112R on the pixel electrode 111R, a common layer 114 on the EL layer 112R, and a common electrode 115 on the common layer 114.
- the light emitting element 130G has a pixel electrode 111G, an EL layer 112G on the pixel electrode 111G, a common layer 114 on the EL layer 112G, and a common electrode 115 on the common layer 114.
- the light emitting element 130B has a pixel electrode 111B, an EL layer 112B on the pixel electrode 111B, a common layer 114 on the EL layer 112B, and a common electrode 115 on the common layer 114.
- the light receiving element 150 includes a conductive layer 131, a pixel electrode 111S on the conductive layer 131, a PD layer 155 on the pixel electrode 111S, a common layer 114 on the PD layer 155, a common electrode 115 on the common layer 114, have Note that the pixel electrode 111 may be called a lower electrode, and the common electrode 115 may be called an upper electrode.
- the EL layer 112R included in the light-emitting element 130R includes a light-emitting organic compound that emits light having an intensity in at least a red wavelength range (for example, a wavelength of 590 nm or more and less than 830 nm).
- the EL layer 112G included in the light-emitting element 130G contains a light-emitting organic compound that emits light having an intensity in at least a green wavelength range (for example, a wavelength of 490 nm or more and less than 590 nm).
- the EL layer 112B included in the light-emitting element 130B contains a light-emitting organic compound that emits light having an intensity in at least a blue wavelength range (eg, a wavelength of 360 nm to less than 490 nm).
- a layer containing a light-emitting organic compound included in the EL layer 112 can be referred to as a light-emitting layer.
- the display device 100 may have an EL layer 112 that emits light having an intensity in an infrared wavelength range, for example, a near-infrared wavelength range (for example, a wavelength of 830 nm or more and less than 2500 nm).
- the EL layer 112 preferably has a carrier-transporting layer over the light-emitting layer. Accordingly, the light-emitting layer can be prevented from being exposed to the outermost surface during the manufacturing process of the display device 100, and damage to the light-emitting layer can be reduced. Therefore, the reliability of the display device 100 can be improved.
- the EL layer 112 can have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.
- the EL layer 112 can have a structure in which a hole-injection layer, a hole-transport layer, a light-emitting layer, and an electron-transport layer are stacked in this order from the pixel electrode 111 side.
- the EL layer 112 can have a structure in which an electron-injection layer, an electron-transport layer, a light-emitting layer, and a hole-transport layer are stacked in this order from the pixel electrode 111 side.
- visible light indicates light with a wavelength of 360 nm or more and less than 830 nm, for example, and infrared light indicates light with a wavelength of 830 nm or more, for example.
- holes or electrons are sometimes referred to as “carriers”.
- the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
- the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
- the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
- the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
- one layer may serve two or three functions of the carrier injection layer, the carrier transport layer, and the carrier block layer.
- the PD layer 155 included in the light receiving element 150 includes a photoelectric conversion material sensitive to visible light or infrared light.
- the wavelength range to which the photoelectric conversion material of the PD layer 155 is sensitive includes the wavelength range of light emitted by the light emitting element 130R, the wavelength range of light emitted by the light emitting element 130G, and the wavelength range of light emitted by the light emitting element 130B.
- a photoelectric conversion material having sensitivity to infrared light having a longer wavelength than the wavelength range of light emitted by the light emitting element 130R may be used.
- a layer containing a photoelectric conversion material included in the PD layer 155 can be called an active layer or a photoelectric conversion layer.
- the PD layer 155 preferably has a carrier transport layer on the active layer. Accordingly, it is possible to prevent the active layer from being exposed to the outermost surface during the manufacturing process of the display device 100 and reduce the damage to the active layer. Therefore, the reliability of the display device 100 can be improved.
- the PD layer 155 can have one or more of a hole transport layer, a hole blocking layer, an electron blocking layer, and an electron transport layer.
- the PD layer 155 can have a structure in which a hole transport layer, an active layer, and an electron transport layer are stacked in this order from the pixel electrode 111 side.
- the EL layer 112 can have a structure in which an electron-transporting layer, an active layer, and a hole-transporting layer are stacked in this order from the pixel electrode 111 side.
- Common layer 114 can be an electron injection layer or a hole injection layer.
- EL layer 112 need not have an electron injection layer if common layer 114 has an electron injection layer, and EL layer 112 need not have a hole injection layer if common layer 114 has a hole injection layer.
- the common layer 114 it is preferable to use a material with as low electric resistance as possible.
- the thickness of the common layer 114 is preferably 1 nm or more and 5 nm or less, more preferably 1 nm or more and 3 nm or less.
- the common layer 114 may have a hole-transporting layer, a hole-blocking layer, an electron-blocking layer, or an electron-transporting layer. As described above, the common layer 114 can have at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer. A layer included in the common layer 114 can have a structure that is not included in the EL layer 112 and the PD layer 155 .
- the function of the common layer 114 in the light emitting element 130 and the function of the common layer 114 in the light receiving element 150 may differ.
- the common layer 114 can function as an electron-injection layer or a hole-injection layer in the light-emitting element 130 and function as an electron-transporting layer or a hole-transporting layer in the light-receiving element 150.
- the conductive layer 131 can be a conductive layer that reflects visible light, and can be made of a metal material, for example.
- the conductive layer 131 may be a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material (for example, silver and alloys of magnesium) can be used.
- a nitride of the metal material eg, titanium nitride
- the pixel electrode 111 and the common electrode 115 can be formed using conductive layers that transmit visible light.
- a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used for the pixel electrode 111 and the common electrode 115 .
- a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or an alloy material containing the metal material may be used as the pixel electrode 111 and the common electrode 115.
- a nitride of the metal material may be used for the pixel electrode 111 and the common electrode 115 .
- a metal material or an alloy material (or a nitride thereof) is used, it is preferably thin enough to have translucency.
- a stacked film of any of the above materials can be used as the conductive layer.
- a protective layer 146 is provided over the EL layer 112 and the PD layer 155 .
- the protective layer 146 is provided in regions of the EL layer 112 and the PD layer 155 that are not in contact with the common layer 114 .
- An insulating layer 125 and an insulating layer 126 are provided between the adjacent light emitting element 130 and light receiving element 150 .
- an insulating layer 125 and an insulating layer 126 are provided between the adjacent EL layer 112 and PD layer 155 .
- An insulating layer 125 and an insulating layer 127 are provided between two adjacent light emitting elements 130 .
- an insulating layer 125 and an insulating layer 127 are provided between two adjacent EL layers 112 .
- the insulating layer 125 is provided on the side surface of the EL layer 112, the side surface of the PD layer 155, the side surface of the protective layer 146, the upper surface of the protective layer 146, and the upper surface of the insulating layer 103, for example.
- impurities such as water can be prevented from entering the EL layer 112 and the PD layer 155 from the side surfaces thereof.
- the insulating layer 126 is provided over the insulating layer 125 and can fill a space between the adjacent EL layer 112 and PD layer 155 .
- an insulating layer 127 can be provided over the insulating layer 125 and fill the space located between two adjacent EL layers 112 .
- a common layer 114 and a common electrode 115 are provided over the insulating layer 126 and the insulating layer 127 .
- the common electrode 115 in the space between the adjacent EL layer 112 and the PD layer 155 and in the space between the two adjacent EL layers 112 is stepped.
- the occurrence of disconnection can be suppressed, and the occurrence of poor connection can be suppressed.
- the display device 100 can be a highly reliable display device.
- the protective layer 146 and the insulating layer 125 can have inorganic materials.
- an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example.
- the protective layer 146 and the insulating layer 125 may have a single-layer structure or a stacked-layer structure.
- the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
- a hafnium film, a tantalum oxide film, and the like are included.
- the nitride insulating film include a silicon nitride film, an aluminum nitride film, and the like.
- Examples of the oxynitride insulating film include a silicon oxynitride film, an aluminum oxynitride film, and the like.
- the nitride oxide insulating film examples include a silicon nitride oxide film, an aluminum nitride oxide film, and the like.
- an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an atomic layer deposition (ALD) method to the protective layer 146 and the insulating layer 125, pinholes can be eliminated. With a small amount, the protective layer 146 and the insulating layer 125 which are excellent in the function of protecting the EL layer 112 can be formed.
- ALD atomic layer deposition
- oxynitride refers to a material whose composition contains more oxygen than nitrogen
- nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
- silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
- silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicate.
- a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, an ALD method, or the like can be used to form the protective layer 146 and the insulating layer 125 .
- the insulating layer 125 is preferably formed by an ALD method with good coverage.
- the insulating layer 126 for example, a material having a high light shielding property against visible light is used. This prevents part of the light emitted from the EL layer 112 adjacent to the PD layer 155 from being incident on the PD layer 155 due to stray light, compared to the case where a material having high transparency to visible light is used as the insulating layer 126, for example. can be suppressed. Therefore, the display device 100 can be a display device that can perform imaging with low noise and high imaging sensitivity.
- the insulating layer 127 for example, a material having high visible light-transmitting properties can be used.
- the insulating layer 126 has a structure in which the transmittance of light with a specific wavelength, which is at least part of the wavelengths of visible light, is lower than the transmittance of light with a specific wavelength in the insulating layer 127.
- the specific wavelength is 600 nm
- the insulating layer 126 has a lower transmittance for light with a wavelength of 600 nm than the insulating layer 127 for light with a wavelength of 600 nm.
- the insulating layer 126 transmits at least one color of light, for example, red (for example, a wavelength of 590 nm or more and less than 830 nm), green (for example, a wavelength of 490 nm or more and less than 590 nm), and blue (for example, a wavelength of 360 nm or more and less than 490 nm).
- the transmittance of the insulating layer 127 may be lower than that of the insulating layer 127 .
- the insulating layer 126 may have a lower transmittance for green light than the insulating layer 127 for green light. From the above, the insulating layer 126 can be called a colored layer in some cases.
- the wavelength of light to which the insulating layer 126 has a light-shielding property is preferably the wavelength of light to which the PD layer 155 is sensitive.
- the insulating layer 126 preferably has a light shielding property with respect to light with a wavelength corresponding to green light.
- Insulating layer 126 and insulating layer 127 can comprise organic materials. Therefore, the insulating layer 126 and the insulating layer 127 can be said to be organic layers.
- a phenol resin, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimideamide resin, a silicone resin, a siloxane resin, a benzocyclobutene resin, or any of these resins can be used. Precursors and the like can be applied.
- novolac resin which is a type of phenolic resin, can be used as the insulating layers 126 and 127 .
- the insulating layer 126 contains resin
- the insulating layer 126 can be called a resin layer
- the insulating layer 127 contains resin
- the insulating layer 127 can be called a resin layer.
- a photosensitive resin can be used for the insulating layers 126 and 127 .
- a color resist can be used as the insulating layer 126 and a photoresist can be used as the insulating layer 127 .
- the insulating layers 126 and 127 can be formed by a spin coating method, a spray method, a screen printing method, a painting method, or the like.
- a reflective film for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, and the like
- a reflective film is provided between the insulating layer 125 and the insulating layer 127 so that A function of improving the light extraction efficiency by reflecting emitted light by the reflecting film may be imparted.
- a protective layer 121 is provided on the common electrode 115 to cover the light emitting element 130 and the light receiving element 150 .
- the protective layer 121 has a function of preventing impurities such as water from diffusing into the light emitting element 130 and the light receiving element 150 from above.
- the protective layer 121 can have, for example, a single-layer structure or a laminated structure including at least an inorganic insulating film.
- the inorganic insulating film include an oxide film or a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or a hafnium oxide film. mentioned.
- a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 121 .
- a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121 .
- a structure in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable.
- the organic insulating film functions as a planarizing film.
- the upper surface of the organic insulating film can be flattened, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier property can be enhanced.
- the upper surface of the protective layer 121 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 121, unevenness due to the underlying structure may occur. This is preferable because it can reduce the impact.
- a structure for example, a color filter, an electrode of a touch sensor, or a lens array
- FIG. 1C1 is a schematic cross-sectional view corresponding to the dashed-dotted line B1-B2 in FIG. 1A, showing a connection portion 140 where the connection electrode 113 and the common electrode 115 are electrically connected.
- the connection section 140 has a connection electrode 113 on the insulating layer 103 , a common layer 114 on the connection electrode 113 , a common electrode 115 on the common layer 114 , and a protective layer 121 on the common electrode 115 .
- a protective layer 146 is provided so as to cover an end portion of the connection electrode 113, and an insulating layer 125, an insulating layer 127, a common layer 114, a common electrode 115, and a protective layer 121 are stacked in this order over the protective layer 146.
- the insulating layer 126 may be provided instead of the insulating layer 127 in the connection portion 140 .
- connection electrode 113 and the common electrode 115 are electrically connected at the connection portion 140 .
- the connection electrode 113 is electrically connected to, for example, an FPC (not shown). As described above, for example, by supplying the power supply potential to the FPC, the power supply potential can be supplied to the common electrode 115 via the connection electrode 113 .
- connection electrode 113 can be formed in a process similar to that of the pixel electrode 111 .
- the pixel electrode 111 and the connection electrode 113 can be formed by forming a conductive film over the insulating layer 103 and the conductive layer 131 and processing the conductive film by an etching method, for example. Therefore, the connection electrode 113 can have the same material as the pixel electrode 111 .
- the connection electrode 113 may have the same material as the conductive layer 131 . In this case, the connection electrode 113 can be formed through the same process as the formation of the conductive layer 131 .
- the common layer 114 can be provided without the included metal mask. Therefore, the manufacturing process of the display device 100 can be simplified, and the manufacturing cost of the display device 100 can be reduced. Therefore, the display device 100 can be a low-cost display device.
- FIG. 1C2 is a modification of the configuration shown in FIG. 1C1.
- FIG. 1C2 shows a configuration example in which the connection portion 140 is not provided with the common layer 114 .
- the connection electrode 113 and the common electrode 115 can be in contact with each other. Thereby, the electrical resistance between the connection electrode 113 and the common electrode 115 can be reduced.
- FIG. 2 is an enlarged view of region 133 shown in FIG. 1B.
- FIG. 2 shows the insulating layer 126, the insulating layer 127, and their peripheral regions.
- FIG. 2 shows light 135, which is external light.
- the substrate 101, the pixel electrode 111, the insulating layer 127, and the common electrode 115 transmit visible light.
- light 135 can pass through display device 100 .
- the user of the display device 100 can see the rear view (transmission image) as a real image through the display device 100 .
- the user of the display device 100 can see the image displayed by the light-emitting element 130 superimposed on the transmission image of the display device 100 .
- the display device 100 can perform an augmented reality (AR) display, for example.
- AR augmented reality
- the display device 100 suppresses deterioration in imaging sensitivity due to stray light by using the insulating layer 126 provided between the EL layer 112 and the PD layer 155 as a layer that has a high light shielding property against visible light. can.
- the insulating layer 126 provided between the adjacent EL layer 112 and the PD layer 155 and the insulating layer 127 provided between the two adjacent EL layers 112 are formed separately. Specifically, for example, among regions on the insulating layer 125, an insulating layer 126 can be provided between the adjacent EL layer 112 and the PD layer 155, and an insulating layer 127 can be provided in other regions.
- the insulating layer 126 is, for example, an insulating layer that has a high light-shielding property against visible light
- the insulating layer 127 is, for example, an insulating layer that has a high light-transmitting property against visible light.
- the display device 100 enables the user of the display device 100 to see the scenery (transmission image) of the rear surface as a real image, while suppressing deterioration in imaging sensitivity due to stray light.
- the display device 100 can be a display device with high light extraction efficiency.
- both the substrate 101 and the pixel electrode 111 provided under the EL layer 112 and the common electrode 115 provided over the EL layer 112 can transmit visible light. Therefore, the light 136 emitted by the EL layer 112 is emitted to both the substrate 101 side and the protective layer 121 side. Therefore, the display device 100 can be a dual emission display device. Note that FIG. 2 shows, as the light 136, light 136G emitted from the EL layer 112G and light 136B emitted from the EL layer 112B.
- FIG. 2 shows light 137 incident on PD layer 155 .
- Light receiving element 150 can detect light 137 .
- the conductive layer 131 having reflectivity with respect to visible light so as to have a region overlapping with the pixel electrode 111S and the PD layer 155, light 135 incident on the substrate 101 side can pass through the pixel electrode 111S. It is possible to suppress incident on the PD layer 155 through. Therefore, it is possible to suitably suppress the deterioration of the imaging sensitivity of the display device 100 due to the light 135 .
- a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface.
- a region in which the angle formed by the inclined side surface and the substrate surface also referred to as a taper angle) is less than 90°.
- the EL layer 112 and the PD layer 155 can be provided so as to cover end portions of the pixel electrode 111 .
- FIG. 2 shows an example in which the EL layer 112G covers the edge of the pixel electrode 111G, the EL layer 112B covers the edge of the pixel electrode 111B, and the PD layer 155 covers the edge of the pixel electrode 111S.
- the EL layer 112 and the PD layer 155 can have a tapered portion 116 in a cross-sectional view.
- FIG. 2 shows an example in which the EL layer 112G has a tapered portion 116G between the end portion of the pixel electrode 111G and the insulating layer 127.
- the EL layer 112B has a tapered portion 116B1 between the left end of the pixel electrode 111B and the insulating layer 127, and a tapered portion 116B2 between the right end of the pixel electrode 111B and the insulating layer 126.
- FIG. 2 shows an example in which the PD layer 155 has a tapered portion 116S between the end portion of the pixel electrode 111S and the insulating layer 126. As shown in FIG.
- the display device 100 can be a highly reliable display device.
- FIG. 2 shows an example in which the pixel electrode 111S covers the end portion of the conductive layer 131.
- the end portion of the conductive layer 131 can be configured to be in contact with the PD layer 155 .
- the bottom surface of the insulating layer 125 is located below the bottom surface of the EL layer 112 and the bottom surface of the PD layer 155, and the bottom surface of the EL layer 112 and the bottom surface of the PD layer 155 are located below the bottom surface of the pixel electrode 111. It shows an example located at .
- the insulating layer 103 may have recesses between the EL layers 112 and between the EL layers 112 and the PD layers 155 . Although the details will be described later, the recess is formed along with the formation of the EL layer 112 and the PD layer 155 .
- FIG. 1B shows a structure in which the conductive layer 131 is in contact with the pixel electrode 111S; however, one embodiment of the present invention is not limited to this.
- FIG. 3A is a modification of the configuration shown in FIG. 1B, showing an example in which a conductive layer 131 is provided on a substrate 101 and an insulating layer 102 is provided so as to cover the conductive layer 131.
- a pixel electrode 111S is provided so as to have a region overlapping with the conductive layer 131 .
- a material similar to the material that can be used for the protective layer 121 can be used for the insulating layer 102 . Note that although the insulating layer 102 is preferably planarized, it does not have to be planarized.
- FIG. 3B is an enlarged view of region 133 shown in FIG. 3A.
- the conductive layer 131 and the pixel electrode 111S are in contact with each other by providing the conductive layer 131 having reflectivity to visible light so as to have a region overlapping with the pixel electrode 111S and the PD layer 155. Even without it, the light 135 incident on the substrate 101 side can be prevented from entering the PD layer 155 via the pixel electrode 111S. Therefore, it is possible to suitably suppress the deterioration of the imaging sensitivity of the display device 100 due to the light 135 .
- the area of the conductive layer 131 when viewed from above can be increased.
- the area of the conductive layer 131 viewed from the top can be made larger than the area of the pixel electrode 111S viewed from the top.
- the area of the conductive layer 131 when viewed from above can be made larger than the area of the PD layer 155 when viewed from the top.
- the light 135 incident on the substrate 101 side can be suitably suppressed from entering the PD layer 155 , so that the deterioration of the imaging sensitivity of the display device 100 due to the light 135 can be suitably suppressed.
- the display device 100 having the configuration shown in FIGS. 2A and 2B can be manufactured through a simple process. Therefore, the manufacturing cost of the display device 100 can be reduced, and the display device 100 can be a low-cost display device.
- a light shielding layer such as an insulating light shielding layer may be provided instead of the conductive layer 131 .
- FIG. 4A is a modification of the configuration shown in FIG. 1B, showing an example in which the conductive layer 131 is not provided.
- the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, and the pixel electrode 111S can be conductive layers that are reflective to visible light.
- the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, and the pixel electrode 111S can have the same material as the conductive layer 131.
- the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are formed of conductive layers that transmit visible light, and the pixel electrode 111S reflects visible light.
- a conductive layer having properties may also be used. That is, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, and the pixel electrode 111S may be formed separately.
- FIG. 4B is an enlarged view of area 133 shown in FIG. 4A. Since the insulating layer 127 is transparent to visible light, the pixel electrode 111 is reflective to visible light when the substrate 101 and the common electrode 115 are transparent to visible light. Even in this case, the external light 135 can pass through the display device 100 . Therefore, the user of the display device 100 can see the rear view (transmission image) as a real image through the display device 100 . Also, the user of the display device 100 can see the image displayed by the light-emitting element 130 superimposed on the transmission image of the display device 100 . Thereby, the display device 100 can perform an augmented reality (AR) display, for example.
- AR augmented reality
- the manufacturing process of the display device 100 can be simplified. Therefore, the manufacturing cost of the display device 100 can be reduced, and the display device 100 can be a low-cost display device.
- the display device 100 having the configurations shown in FIGS. 1B and 2 can be a display device with high transmittance of the light 135 .
- FIG. 5A is a modification of the configuration shown in FIG. 1B, showing an example in which the end of the EL layer 112 and the end of the PD layer 155 are located inside the end of the pixel electrode 111.
- FIG. 5A the edge of the EL layer 112R is located inside the edge of the pixel electrode 111R, the edge of the EL layer 112G is located inside the edge of the pixel electrode 111G, and the edge of the EL layer 112B is located inside the edge of the pixel electrode 111G. is located inside the edge of the pixel electrode 111B, and the edge of the PD layer 155 is located inside the edge of the pixel electrode 111S.
- the display device 100 shown in FIG. 5A has a structure in which the EL layer 112 and the PD layer 155 do not cover the end portions of the pixel electrodes 111, the occurrence of steps in the EL layer 112 and the PD layer 155 can be suppressed. Therefore, disconnection of the EL layer 112 and the PD layer 155 can be suppressed, and the display device 100 can be a highly reliable display device.
- FIG. 5B1 is a modification of the configuration shown in FIG. 1B, and shows an example in which insulating layers 117 are provided between adjacent light emitting elements 130 and light receiving elements 150 and between two adjacent light emitting elements 130.
- FIG. The insulating layer 117 is provided so as to cover the edge of the pixel electrode 111 . Regions of the EL layer 112 and the PD layer 155 that are not in contact with the pixel electrode 111 are provided over the insulating layer 117 . Therefore, the display device 100 having the configuration shown in FIG. 5B1 has a region in which the insulating layer 117 is provided between the pixel electrode 111 and the EL layer 112 and the PD layer 155 around the end portion of the pixel electrode 111 .
- a protective layer 146 is provided over the EL layer 112 and the PD layer 155 so as to have a region overlapping with the insulating layer 117 .
- An insulating layer 125 is provided over the protective layer 146 and the insulating layer 117 , and an insulating layer 126 and an insulating layer 127 are provided over the insulating layer 125 .
- the insulating layer 117 may have recesses between the EL layers 112 and between the EL layer 112 and the PD layer 155, as shown in FIG. 5B1. The recess is formed along with the formation of the EL layer 112 and the PD layer 155 .
- the insulating layer 117 By providing the insulating layer 117 so as to cover the end portions of the pixel electrodes 111, short circuits between adjacent pixel electrodes 111 can be prevented.
- an organic material such as an organic resin for the insulating layer 117
- the end portion can be formed into a gently curved surface. Therefore, coverage with a layer provided over the insulating layer 117 can be improved.
- the insulating layer 117 can have a region with a planarized top surface.
- organic materials that can be used for the insulating layer 117 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, benzocyclobutene resins, and phenol resins.
- FIG. 5B2 is a modification of the configuration shown in FIG. 5B1, showing an example in which the edge of the insulating layer 117 is angular and the upper surface of the insulating layer 117 is not flattened.
- An inorganic material for example, can be used for the insulating layer 117 shown in FIG. 5B2.
- Inorganic materials that can be used for the insulating layer 117 include silicon oxide, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, and oxide. Examples include silicon nitride, aluminum oxynitride, silicon nitride oxide, and aluminum nitride oxide.
- thin films (an insulating film, a semiconductor film, a conductive film, or the like) forming a display device can be formed by a sputtering method, a CVD method, a vacuum evaporation method, a PLD method, an ALD method, or the like.
- the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, or the like.
- PECVD plasma enhanced CVD
- thermal CVD methods is the metal organic CVD (MOCVD) method.
- MOCVD metal organic CVD
- ALD method there is a PEALD method, a thermal ALD method, or the like.
- thin films that make up the display device can be formed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, It can be formed by a method such as curtain coating or knife coating.
- the thin film when processing the thin film that constitutes the display device, for example, a photolithography method can be used.
- the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
- an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
- the photolithography method there are typically the following two methods.
- One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask.
- the other is a method of forming a thin film having photosensitivity and then exposing and developing the thin film to process the thin film into a desired shape.
- the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof.
- ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
- extreme ultraviolet (EUV: Extreme Ultra-Violet) light or X-rays may be used.
- An electron beam can also be used instead of the light used for exposure.
- the use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
- a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
- a dry etching method, a wet etching method, a sandblasting method, or the like can be used for etching the thin film.
- 6A to 11B are schematic cross-sectional views showing an example of a method for manufacturing the display device 100 in which the light-emitting element 130 and the light-receiving element 150 have the configuration shown in FIG. 1B, and the connection portion 140 has the configuration shown in FIG. 1C1.
- an insulating layer 103 is formed over a substrate 101 that transmits visible light.
- a conductive layer 131 is formed on the insulating layer 103 (FIG. 6A).
- the conductive layer 131 can be formed by forming a conductive film reflecting visible light over the insulating layer 103 and then removing part of the conductive film by etching.
- a pixel electrode 111R, a pixel electrode 111G, a pixel electrode 111B, and a connection electrode 113 are formed on the insulating layer 103, and a pixel electrode 111S is formed on the conductive layer 131 (FIG. 6B).
- a conductive film having a property of transmitting visible light is formed over the insulating layer 103 and the conductive layer 131, and part of the conductive film is removed by etching, whereby the pixel electrode 111R and the pixel electrode are formed.
- 111G, a pixel electrode 111B, a pixel electrode 111S, and a connection electrode 113 can be formed.
- the conductive layer 131 is etched when the pixel electrode 111S is formed. can be suppressed.
- an EL film 112Rf that will later become the EL layer 112R is formed on the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the pixel electrode 111S, and the insulating layer 103 .
- the EL film 112 Rf can be provided so as not to overlap with the connection electrode 113 .
- the EL film 112Rf can be formed so as not to overlap with the connection electrode 113 by shielding the region including the connection electrode 113 with a metal mask and forming the EL film 112Rf. Since the metal mask used at this time does not need to shield the pixel region of the display section, it is not necessary to use a high-definition mask, and for example, a rough metal mask can be used.
- the EL film 112Rf has at least a film (light-emitting film) containing a light-emitting compound. Further, the EL film 112Rf preferably has a light emitting film and a film functioning as a carrier transport layer on the light emitting film. As a result, it is possible to prevent the light-emitting film from being exposed to the outermost surface during the manufacturing process of the display device 100, and reduce damage to the light-emitting film. Therefore, the reliability of the display device 100 can be improved.
- the EL film 112Rf may have a structure in which one or more of films functioning as a hole injection layer, a hole transport layer, a hole block layer, an electron block layer, an electron transport layer, or an electron injection layer are laminated. good.
- the EL film 112Rf can have a structure in which a film functioning as a hole injection layer, a film functioning as a hole transporting layer, a light emitting film, and a film functioning as an electron transporting layer are laminated in this order.
- the EL film 112Rf can have a structure in which a film functioning as an electron injection layer, a film functioning as an electron transporting layer, a light emitting film, and a film functioning as a hole transporting layer are laminated in this order.
- the EL film 112Rf can be formed, for example, by a vapor deposition method, a sputtering method, an inkjet method, or the like. Note that the method is not limited to this, and the film forming method described above can be used as appropriate.
- a sacrificial film 144Ra is formed on the EL film 112Rf, the connection electrode 113, and the insulating layer 103, and a sacrificial film 144Rb is formed on the sacrificial film 144Ra. That is, a sacrificial film having a two-layer structure is formed over the EL film 112Rf, the connection electrode 113, and the insulating layer 103.
- the sacrificial film may have a single layer structure, or may have a laminated structure of three or more layers. When the sacrificial film is formed in the subsequent steps, the sacrificial film has a two-layer laminated structure, but may have a single layer structure or a laminated structure of three or more layers.
- a sputtering method for example, a CVD method, an ALD method, or a vacuum deposition method can be used.
- a formation method that causes little damage to the EL film is preferable, and the sacrificial film 144Ra directly formed on the EL film 112Rf is preferably formed using an ALD method or a vacuum evaporation method.
- an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film, or an organic film such as an organic insulating film can be preferably used.
- an oxide film can be used as the sacrificial film 144Ra.
- an oxide film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride, or an oxynitride film can be used.
- a nitride film for example, can also be used as the sacrificial film 144Ra.
- nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can also be used.
- a film containing such an inorganic insulating material can be formed using a film formation method such as a sputtering method, a CVD method, or an ALD method. It is preferably formed using a method.
- metal materials such as nickel, tungsten, chromium, molybdenum, cobalt, palladium, titanium, aluminum, silver, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials can be used. .
- a low melting point material such as aluminum or silver.
- a metal oxide such as indium gallium zinc oxide (In--Ga--Zn oxide) can be used as the sacrificial film 144Ra.
- indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn -Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or the like can be used.
- indium tin oxide containing silicon can be used.
- element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium).
- M is preferably one or more selected from gallium, aluminum, and yttrium.
- a material that can be used as the sacrificial film 144Ra can be used.
- one material can be selected for the sacrificial film 144Ra and the other can be selected for the sacrificial film 144Rb from the materials that can be used for the sacrificial film 144Ra listed above.
- one or a plurality of materials are selected for the sacrificial film 144Ra from among the materials that can be used for the sacrificial film 144Ra, and materials other than those selected for the sacrificial film 144Ra are selected for the sacrificial film 144Rb.
- One or more materials can be used.
- the film formation temperature for film formation by the ALD method and the sputtering method is room temperature or higher and 120° C. or lower, preferably room temperature or higher and 100° C. or lower, so that the influence on the EL film 112Rf is minimized. It is preferable because it can be reduced.
- the stress of the laminated structure is small.
- the stress of the laminated structure is ⁇ 500 MPa or more and +500 MPa or less, more preferably ⁇ 200 MPa or more and +200 MPa or less, process troubles such as film peeling and peeling can be suppressed, which is preferable.
- a film having high resistance to the etching process of each EL film such as the EL film 112Rf, that is, a film having a high etching selectivity can be used.
- a material that can be dissolved in a chemically stable solvent may be used as the sacrificial film 144Ra.
- a material that dissolves in water or alcohol can be suitably used for the sacrificial film 144Ra.
- the sacrificial film 144Ra is dissolved in a solvent such as water or alcohol and applied by a wet film forming method, and then heat-treated to evaporate the solvent.
- the solvent can be removed at a low temperature in a short time by performing heat treatment in a reduced pressure atmosphere, so that thermal damage to the EL film 112Rf can be reduced, which is preferable.
- wet film formation methods that can be used to form the sacrificial film 144Ra include spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and the like. There are knife courts, etc.
- an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.
- PVA polyvinyl alcohol
- polyvinyl butyral polyvinylpyrrolidone
- polyethylene glycol polyglycerin
- pullulan polyethylene glycol
- pullulan polyglycerin
- pullulan water-soluble cellulose
- alcohol-soluble polyamide resin water-soluble polyamide resin
- a film having a high etching selectivity with respect to the sacrificial film 144Ra may be used for the sacrificial film 144Rb.
- an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by ALD is used, and as the sacrificial film 144Rb, nickel, tungsten, chromium, molybdenum, cobalt, palladium, It is preferable to use a metal material such as titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing the metal material. In particular, it is preferable to use tungsten formed by a sputtering method as the sacrificial film 144Rb.
- a metal oxide containing indium such as indium gallium zinc oxide (In--Ga--Zn oxide) formed by a sputtering method may be used.
- an inorganic material may be used as the sacrificial film 144Rb.
- an oxide film or a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or a hafnium oxide film can be used.
- an organic film that can be used for the EL film 112Rf may be used as the sacrificial film 144Rb.
- the same organic film as the EL film 112Rf can be used as the sacrificial film 144Rb.
- the use of such an organic film is preferable because the EL film 112Rf and the deposition apparatus can be used in common.
- the sacrificial film 144Rb can be removed at the same time when the EL film 112Rf is etched, the process can be simplified.
- a resist mask 143a is formed on the sacrificial film 144Rb (FIG. 6C).
- a resist material containing a photosensitive resin such as a positive resist material or a negative resist material can be used.
- portions of the sacrificial films 144Rb and 144Ra that are not covered with the resist mask 143a are removed by etching to form island-shaped or band-shaped sacrificial layers 145Rb and 145Ra (FIG. 6D).
- the sacrificial layer 145Rb and the sacrificial layer 145Ra can be formed on the pixel electrode 111R and the connection electrode 113, for example.
- a part of the sacrificial film 144Rb is removed by etching using the resist mask 143a, and after the sacrificial layer 145Rb is formed, the resist mask 143a is removed, and then the sacrificial film 144Ra is etched using the sacrificial layer 145Rb as a hard mask. is preferred.
- a wet etching method or a dry etching method can be used for etching for forming the hard mask, and the use of the dry etching method can suppress pattern shrinkage.
- Processing of the sacrificial films 144Ra and 144Rb and removal of the resist mask 143a can be performed by a wet etching method or a dry etching method.
- the sacrificial film 144Ra and the sacrificial film 144Rb can be processed by a dry etching method using gas containing fluorine.
- the resist mask 143a can be removed by a dry etching method (also referred to as a plasma ashing method) using a gas containing oxygen (also referred to as an oxygen gas).
- the resist mask 143a can be removed while the EL film 112Rf is covered with the sacrificial film 144Ra.
- the EL film 112Rf is exposed to oxygen, it may adversely affect the electrical characteristics of the light emitting element 130R. Therefore, when removing the resist mask 143a by a method using oxygen gas such as plasma ashing, it is preferable to etch the sacrificial film 144Ra using the sacrificial layer 145Rb as a hard mask.
- a portion of the EL film 112Rf that is not covered with the sacrificial layer 145Ra is removed by etching to form an island-shaped or strip-shaped EL layer 112R (FIG. 6E).
- the edge of the pixel electrode 111R has a tapered shape as shown in FIG. 6E and the EL layer 112R covers the edge of the pixel electrode 111R, the EL layer 112R can have a tapered portion 116R.
- the etching rate can be increased by using a dry etching method using oxygen gas for etching the EL film 112Rf. Therefore, etching can be performed under low-power conditions while maintaining a sufficiently high etching rate, so that damage due to etching can be reduced. Further, it is possible to suppress problems such as adhesion of reaction products generated during etching to the EL layer 112R.
- the display device 100 can be a highly reliable display device.
- the etching gas containing no oxygen as a main component include gases containing CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, or BCl 3 , or Group 18 elements such as He. gas containing.
- a mixed gas of the above gas and a diluent gas that does not contain oxygen can be used as an etching gas.
- Etching of the EL film 112Rf is not limited to the above, and may be performed by a dry etching method using another gas or by a wet etching method.
- the EL layer 112R is formed by etching the EL film 112Rf, if impurities adhere to the side surface of the EL layer 112R, the impurities may penetrate into the EL layer 112R in subsequent steps. This may reduce the reliability of the display device 100 . Therefore, it is preferable to remove impurities attached to the surface of the EL layer 112R after the EL layer 112R is formed, because the reliability of the display device 100 can be improved.
- Impurities adhering to the surface of the EL layer 112R can be removed, for example, by irradiating the surface of the EL layer 112R with an inert gas.
- the surface of the EL layer 112R is exposed immediately after the EL layer 112R is formed. Specifically, the side surface of the EL layer 112R is exposed. Therefore, if the substrate on which the EL layer 112R is formed is placed in an inert gas atmosphere after the EL layer 112R is formed, the impurities adhering to the EL layer 112R can be removed.
- the inert gas for example, any one or more selected from group 18 elements (typically helium, neon, argon, xenon, krypton, etc.) and nitrogen can be used.
- a method of processing using a photolithography method right above the light-emitting film of the EL film 112Rf can be considered.
- the light-emitting layer may be damaged (for example, by processing), and the reliability may be significantly impaired. Therefore, in order to manufacture the display device 100, a film (for example, a carrier transport layer or a carrier injection layer, more specifically an electron transport layer, a hole transport layer, an electron injection layer, or a positive electrode layer) positioned above the light emitting film is used.
- a sacrificial layer 145Ra and a sacrificial layer 145Rb are formed on the film functioning as a hole injection layer), and the light emitting film is processed. Accordingly, the display device 100 can be a highly reliable display device.
- an EL film 112Gf which will later become the EL layer 112G, is formed on the sacrificial layer 145Rb, the pixel electrode 111G, the pixel electrode 111B, the pixel electrode 111S, and the insulating layer 103.
- FIG. By forming the EL film 112Gf after forming the sacrificial layer 145Ra, it is possible to prevent the EL film 112Gf from contacting the upper surface of the EL layer 112R.
- the description of the formation of the EL film 112Rf can be referred to.
- a sacrificial film 144Ga is formed on the EL film 112Gf, the sacrificial layer 145Rb, and the insulating layer 103, and a sacrificial film 144Gb is formed on the sacrificial film 144Ga.
- a resist mask 143b is formed on the sacrificial film 144Gb (FIG. 7A).
- the description of the formation of the sacrificial film 144Ra, the sacrificial film 144Rb, and the resist mask 143a can be referred to.
- portions of the sacrificial films 144Gb and 144Ga that are not covered with the resist mask 143b are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Gb and 145Ga.
- the resist mask 143b is removed (FIG. 7B).
- the sacrificial layer 145Gb and the sacrificial layer 145Ga can be formed on the pixel electrode 111G.
- the description of the formation of the sacrificial layers 145Rb and 145Ra and the removal of the resist mask 143a can be referred to.
- a portion of the EL film 112Gf that is not covered with the sacrificial layer 145Ga is removed by etching to form an island-shaped or strip-shaped EL layer 112G (FIG. 7C).
- the edge of the pixel electrode 111G has a tapered shape as shown in FIG. 7C and the EL layer 112G covers the edge of the pixel electrode 111G, the EL layer 112G can have a tapered portion 116G.
- the description of the formation of the EL layer 112R can be referred to.
- the impurities attached to the EL layer 112G can be removed.
- the display device 100 can be a highly reliable display device.
- an EL film 112Bf which will later become the EL layer 112B is formed on the sacrificial layer 145Rb, the sacrificial layer 145Gb, the pixel electrode 111B, the pixel electrode 111S, and the insulating layer 103.
- FIG. By forming the EL film 112Bf after forming the sacrificial layer 145Ga, it is possible to prevent the EL film 112Bf from contacting the upper surface of the EL layer 112G.
- the description of the formation of the EL film 112Rf can be referred to.
- a sacrificial film 144Ba is formed on the EL film 112Bf, the sacrificial layer 145Rb, and the insulating layer 103, and a sacrificial film 144Bb is formed on the sacrificial film 144Ba.
- a resist mask 143c is formed on the sacrificial film 144Bb (FIG. 8A).
- the description of the formation of the sacrificial film 144Ra, the sacrificial film 144Rb, and the resist mask 143a can be referred to.
- portions of the sacrificial films 144Bb and 144Ba that are not covered with the resist mask 143c are removed by etching to form island-shaped or strip-shaped sacrificial layers 145Bb and 145Ba.
- the resist mask 143c is removed (FIG. 8B).
- the sacrificial layer 145Bb and the sacrificial layer 145Ba can be formed on the pixel electrode 111B.
- the description of the formation of the sacrificial layers 145Rb and 145Ra and the removal of the resist mask 143a can be referred to.
- a portion of the EL film 112Bf that is not covered with the sacrificial layer 145Ba is removed by etching to form an island-shaped or strip-shaped EL layer 112B (FIG. 8C).
- the edge of the pixel electrode 111B has a tapered shape as shown in FIG. 8C and the EL layer 112B covers the edge of the pixel electrode 111B, the EL layer 112B can have a tapered portion 116B.
- the description of the formation of the EL layer 112R can be referred to.
- impurities attached to the EL layer 112B can be removed.
- the display device 100 can be a highly reliable display device.
- a PD film 155f that will later become the PD layer 155 is formed on the sacrificial layer 145Rb, the sacrificial layer 145Gb, the sacrificial layer 145Bb, the pixel electrode 111S, and the insulating layer 103.
- FIG. By forming the PD film 155f after forming the sacrificial layer 145Ba, contact of the PD film 155f with the EL layer 112B can be suppressed.
- the description of the formation of the EL film 112Rf can be referred to.
- the PD film 155f has a film (photoelectric conversion film) containing a photoelectric conversion material sensitive to at least visible light or infrared light. Further, the PD film 155f preferably has a photoelectric conversion film and a film functioning as a carrier transport layer on the photoelectric conversion film. As a result, exposure of the photoelectric conversion film to the outermost surface can be suppressed during the manufacturing process of the display device 100, and damage to the photoelectric conversion film can be reduced. Therefore, the reliability of the display device 100 can be improved.
- the PD film 155f may have a structure in which one or more of films functioning as a hole transport layer, a hole block layer, an electron block layer, or an electron transport layer are laminated.
- the PD film 155f can have a structure in which a film functioning as a hole transport layer, a photoelectric conversion film, and a film functioning as an electron transport layer are laminated in this order.
- the PD film 155f can have a structure in which a film functioning as an electron transport layer, a photoelectric conversion film, and a film functioning as a hole transport layer are laminated in this order.
- a sacrificial film 144Sa is formed on the PD film 155f, the sacrificial layer 145Rb, and the insulating layer 103, and a sacrificial film 144Sb is formed on the sacrificial film 144Sa.
- a resist mask 143d is formed on the sacrificial film 144Sb (FIG. 9A).
- the description of the formation of the sacrificial film 144Ra, the sacrificial film 144Rb, and the resist mask 143a can be referred to.
- portions of the sacrificial films 144Sb and 144Sa that are not covered with the resist mask 143d are removed by etching to form island-shaped or band-shaped sacrificial layers 145Sb and 145Sa.
- the resist mask 143d is removed (FIG. 9B).
- the sacrificial layer 145Sb and the sacrificial layer 145Sa can be formed on the pixel electrode 111S.
- the description of the formation of the sacrificial layers 145Rb and 145Ra and the removal of the resist mask 143a can be referred to.
- a portion of the PD film 155f that is not covered with the sacrificial layer 145Sa is removed by etching to form an island-shaped or belt-shaped PD layer 155 (FIG. 9C).
- the edge of the pixel electrode 111S has a tapered shape as shown in FIG. 9C and the PD layer 155 covers the edge of the pixel electrode 111S, the PD layer 155 can have a tapered portion 116S.
- the description of the formation of the EL layer 112R can be referred to.
- the impurities adhering to the PD layer 155 can be removed.
- the display device 100 can be a highly reliable display device.
- the EL layer 112R, the EL layer 112G, the EL layer 112B, and the PD layer 155 can be formed separately.
- the EL layer 112R, the EL layer 112G, the EL layer 112B, and the PD layer 155 are formed in this order. It is not particularly limited.
- the EL layer 112 may be formed after the PD layer 155 is formed.
- the sacrificial layer 145Rb, the sacrificial layer 145Gb, the sacrificial layer 145Bb, and the sacrificial layer 145Sb are removed using etching, for example (FIG. 9D).
- the sacrificial layer 145Rb, the sacrificial layer 145Gb, the sacrificial layer 145Bb, and the sacrificial layer 145Sb are preferably removed by a method with high selectivity to the sacrificial layer 145Ra, the sacrificial layer 145Ga, the sacrificial layer 145Ba, and the sacrificial layer 145Sa.
- the sacrificial layer 145Rb, sacrificial layer 145Gb, sacrificial layer 145Bb, and sacrificial layer 145Sb can be removed using a dry etching method.
- the sacrificial layer 145Rb, the sacrificial layer 145Gb, the sacrificial layer 145Bb, and the sacrificial layer 145Sb are not removed immediately after the EL layer 112R, the EL layer 112G, the EL layer 112B, or the PD layer 155 is formed, but are removed in a later step. good too.
- an insulating film 125f that will later become the insulating layer 125 is formed so as to cover the upper surface of the insulating layer 103, the side surfaces of the EL layer 112 and the PD layer 155, and the side surface and upper surface of the sacrificial layer 145a.
- the sacrificial layer 145a when describing items common to the sacrificial layer 145Ra, the sacrificial layer 145Ga, the sacrificial layer 145Ba, and the sacrificial layer 145Sa, the sacrificial layer 145a may be referred to.
- the sacrificial layer 145 when describing items common to the sacrificial layer 145a and the sacrificial layer 145b, the sacrificial layer 145 may be referred to as the sacrificial layer.
- Other components may also be described using reference numerals with abbreviated alphabets as described above.
- the insulating film 125f can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like, but is preferably formed by an ALD method, which has good coverage.
- an inorganic material can be used, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used.
- the insulating film 125f can be an insulating film with few pinholes by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method.
- an insulating film 126f that will later become the insulating layer 126 is formed on the insulating film 125f (FIG. 10A).
- An organic material for example, can be used as the insulating film 126f.
- the insulating film 126f can be, for example, a color resist.
- the insulating film 126f is a color resist, it is preferable that the insulating film 126f be made of a negative resist that reduces the solubility of the exposed portion.
- the insulating film 126f can be formed by a spin coating method, a spray method, a screen printing method, a painting method, or the like.
- the insulating film 126f may have smooth unevenness reflecting the unevenness of the formation surface. Moreover, the insulating film 126f may be planarized.
- an insulating layer 126 is formed between the adjacent EL layer 112 and PD layer 155 (FIG. 10B).
- a photosensitive material such as a color resist for the insulating film 126f
- the insulating layer 126 can be formed without providing a resist mask or an etching mask such as a hard mask.
- a photosensitive material such as a color resist can be processed only by exposure and development steps
- the insulating layer 126 can be formed without using dry etching, for example. Therefore, the process can be simplified. Further, damage to the EL layer 112 and the PD layer 155 due to etching of the insulating film 126f can be reduced.
- the insulating layer 126 may be formed by substantially uniformly etching the upper surface of the insulating film 126f. Such uniform etching and flattening is also called etchback. Note that in forming the insulating layer 126, an exposure and development step and an etch-back step may be used in combination.
- the insulating layer 126 may be formed by processing the insulating film 126f by dry etching, for example.
- a non-photosensitive material can be used for the insulating film 126f.
- an insulating film 127f that will later become the insulating layer 127 is formed over the insulating film 125f and the insulating layer 126 (FIG. 10C).
- an organic material can be used as the insulating film 127f.
- the insulating film 127f can be made of photoresist, for example. When the insulating film 127f is a photoresist, the insulating film 127f may be either a negative resist that lowers the solubility of the exposed portion or a positive resist that increases the solubility of the exposed portion.
- the insulating film 127f can be formed by a spin coating method, a spray method, a screen printing method, a painting method, or the like.
- the insulating film 127f may have smooth unevenness reflecting the unevenness of the formation surface. Moreover, the insulating film 127f may be planarized.
- an insulating layer 127 is formed between two adjacent EL layers 112 (FIG. 10D).
- the insulating layer 127 can be formed in a region where the insulating layer 126 is not formed among the regions where the insulating layer 125 is formed in a later step.
- the insulating layer 127 can be formed without providing a resist mask or an etching mask such as a hard mask.
- the insulating layer 127 can be formed without using a dry etching method, for example. Therefore, the process can be simplified. Further, damage to the EL layer 112 and the PD layer 155 due to etching of the insulating film 127f can be reduced.
- the insulating layer 126 may dissolve and disappear during development of the insulating film 127f. Therefore, as described above, it is preferable to use a negative resist as the insulating film 126f that becomes the insulating layer 126.
- etching back may be performed on the upper surface of the insulating film 127f. Note that in forming the insulating layer 127, an exposure and development step and an etch-back step may be combined.
- the insulating layer 127 may be formed by processing the insulating film 127f by dry etching, for example.
- a non-photosensitive material can be used for the insulating film 127f.
- the insulating layer 126 not only a negative resist but also a positive resist can be used.
- the insulating layer 127 has a higher transmittance for light with a specific wavelength, which is at least part of the wavelengths of visible light, than the transmittance for light with a specific wavelength in the insulating layer 126 . Further, the insulating layer 127 can have a higher transmittance than the insulating layer 126 for at least one of red, green, and blue light, for example.
- the insulating layer 126 provided between the adjacent EL layer 112 and the PD layer 155 and the insulating layer 127 provided between the two adjacent EL layers 112 are formed.
- the insulating layer 126 can be formed after the insulating layer 127 is formed. Further, even when a photosensitive material is not used for the insulating layer 127, the insulating layer 126 can be formed after the insulating layer 127 is formed.
- the sacrificial layer 145a is etched to form the protective layer 146, and the insulating film 125f is etched to form the insulating layer 125 (FIG. 11A).
- the protective layer 146 is formed by etching the sacrificial layer 145a, the protective layer 146 can also be called a sacrificial layer.
- the sacrificial layer 145a and the insulating film 125f can be etched using the insulating layers 126 and 127 as masks. Therefore, the insulating layer 125 and the protective layer 146 are formed so as to overlap with the insulating layer 126 , and the insulating layer 125 and the protective layer 146 are formed so as to overlap with the insulating layer 127 . 9D is not performed, that is, when the insulating film 125f is formed without removing the sacrificial layer 145b after the formation of the PD layer 155, the sacrificial layer 145b and the sacrificial layer 145a are etched. , a protective layer 146 is formed.
- the etching of the sacrificial layer 145a is preferably performed by a method that damages the EL layer 112 and the PD layer 155 as little as possible.
- the sacrificial layer 145a can be etched by, for example, a wet etching method.
- the insulating film 125f is preferably etched by anisotropic etching, because the insulating layer 125 can be preferably formed without patterning using a photolithography method, for example.
- anisotropic etching include dry etching.
- the insulating film 125f can be etched using an etching gas that can be used when etching the sacrificial film 144, for example.
- vacuum baking is performed to remove water adsorbed on the surface of the EL layer 112 and the surface of the PD layer 155, for example.
- Vacuum baking is preferably performed, for example, in a temperature range that does not alter the organic compounds contained in the EL layer 112 and the PD layer 155, for example, 70° C. to 120° C., more preferably 80° C. to 100° C. can.
- the vacuum baking process may not be performed.
- common layer 114 is formed over the EL layer 112 , the PD layer 155 , the insulating layer 126 , the insulating layer 127 , and the connection electrode 113 .
- common layer 114 includes at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer, such as an electron injection layer. , or with a hole injection layer.
- the common layer 114 can be formed, for example, by an evaporation method, a sputtering method, an inkjet method, or the like.
- a metal mask that shields the connection electrode 113 may be used in forming the common layer 114 . Since the metal mask used at this time does not need to shield the pixel region of the display section, it is not necessary to use a high-definition mask, and for example, a rough metal mask can be used.
- a common electrode 115 is formed on the common layer 114 .
- the common electrode 115 can be formed by, for example, a sputtering method, a vacuum deposition method, or the like. As described above, the common electrode 115 can be a conductive layer having translucency.
- a protective layer 121 is formed on the common electrode 115 (FIG. 11B).
- the protective layer 121 is preferably formed by a sputtering method, a CVD method, or an ALD method, for example.
- an organic insulating film is used as the protective layer 121, it is preferable to form the protective layer 121 by using an inkjet method, for example, because a uniform film can be formed in a desired area.
- the display device 100 can be manufactured.
- a device manufactured using a metal mask or FMM fine metal mask, high-definition metal mask
- a device with an MM (metal mask) structure is sometimes referred to as a device with an MML (metal maskless) structure.
- the island-shaped EL layer 112 is formed not by a metal mask pattern, but by forming the EL film 112f over the entire surface. Formed by processing.
- the island-shaped PD layer 155 is not formed by a pattern of a metal mask, but is formed by forming a PD film 155f on one surface and then processing it.
- a high-definition or high-aperture display device and an imaging device can be realized. Further, a display device having an imaging function and high definition or high aperture ratio can be realized.
- the EL layer 112 can be separately formed for each color, a display device with extremely vivid, high-contrast, and high-quality display can be realized.
- a sacrificial layer over the EL layer 112 and the PD layer 155, damage to the EL layer 112 and the PD layer 155 during the manufacturing process of the display device 100 is reduced, and the light-emitting element 130 and the light-receiving element are reduced. 150 reliability can be improved.
- the display device 100 can have a structure in which an insulator covering the end portion of the pixel electrode 111 is not provided.
- an insulating layer is not provided between the pixel electrode 111 and the EL layer 112 provided on the light emitting element 130 and between the pixel electrode 111 and the PD layer 155 provided on the light receiving element 150 .
- the viewing angle dependency can be extremely reduced.
- the viewing angle (the maximum angle at which a constant contrast ratio is maintained when the screen is viewed from an oblique direction) is 100° or more and less than 180°, preferably 150° or more and 170° or less. can be a range. Note that the viewing angles described above can be applied to each of the vertical and horizontal directions. By using the display device of one embodiment of the present invention, the viewing angle dependency can be improved, and the visibility of images can be improved.
- the display device 100 is a device with a fine metal mask (FMM) structure, for example, there may be restrictions on the configuration of pixel arrangement.
- FMM structure device will be described below.
- a metal mask (FMM) having openings so that EL is deposited in a desired region is set to face the substrate during EL deposition.
- EL vapor deposition is performed on a desired region by performing EL vapor deposition through FMM.
- the FMM may be deformed. For example, there is a method of applying a certain tension to the FMM during EL deposition, so the weight and strength of the FMM are important parameters.
- the display device of one embodiment of the present invention is a device with an MML structure, it has an excellent effect such as a higher degree of freedom in pixel arrangement than a device with an FMM structure. Since the MML structure has a higher degree of design freedom than the FMM structure, it has a very high affinity with, for example, flexible devices.
- FIGS. 6A to 11B are schematic cross-sectional views showing an example of a method for manufacturing the display device 100, which is different from the method shown in FIGS. 6A to 11B.
- a pixel electrode 111R, a pixel electrode 111G, a pixel electrode 111B, a conductive layer 131, and a connection electrode 113 are formed over the insulating layer 103.
- the pixel electrode 111S is formed over the conductive layer 131.
- An EL layer 112R is formed on the pixel electrode 111R
- an EL layer 112G is formed on the pixel electrode 111G
- an EL layer 112B is formed on the pixel electrode 111B
- a PD layer 155 is formed on the pixel electrode 111S.
- a sacrificial layer 145Ra is formed on the EL layer 112R and the connection electrode 113, a sacrificial layer 145Ga is formed on the EL layer 112G, a sacrificial layer 145Ba is formed on the EL layer 112B, and a sacrificial layer 145Ba is formed on the PD layer 155.
- a layer 145Sa is formed (FIG. 12A). Note that the step shown in FIG. 9D may not be performed. In this case, the sacrificial layer 145b remains on the sacrificial layer 145a.
- an insulating film 125f that will later become the insulating layer 125 is formed so as to cover the upper surface of the insulating layer 103, the side surfaces of the EL layer 112 and the PD layer 155, and the side surface and upper surface of the sacrificial layer 145a.
- the insulating film 125f can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like, but is preferably formed by an ALD method, which has good coverage.
- an inorganic material can be used, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used.
- the insulating film 125f can be an insulating film with few pinholes by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method.
- an insulating film 127f that will later become the insulating layer 127 is formed on the insulating film 125f (FIG. 12B).
- an organic material can be used as the insulating film 127f.
- the insulating film 127f can be made of photoresist, for example.
- the insulating film 127f can be formed by a spin coating method, a spray method, a screen printing method, a painting method, or the like.
- an insulating layer 127 is formed between two adjacent EL layers 112 (FIG. 12C).
- the insulating layer 127 can be formed in a region other than between the adjacent EL layer 112 and the PD layer 155 among the regions where the insulating layer 125 will be formed in a later step.
- a photosensitive material such as a photoresist for the insulating film 127f
- the insulating layer 127 can be formed without providing a resist mask or an etching mask such as a hard mask.
- the insulating layer 127 can be formed without using a dry etching method, for example. Therefore, the process can be simplified. Further, damage to the EL layer 112 and the PD layer 155 due to etching of the insulating film 127f can be reduced.
- a protective film 147f is formed on the insulating layer 127 and the insulating film 125f (FIG. 12D).
- a material similar to the material that can be used for the insulating film 125f can be used for the protective film 147f.
- a material similar to the material that can be used for the sacrificial film 144b can be used for the protective film 147f.
- an inorganic material can be used for the protective film 147f.
- an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used.
- a metal material can be used as the protective film 147f.
- a metal oxide such as indium gallium zinc oxide can be used as the protective film 147f.
- the protective film 147f can be formed using a sputtering method, a CVD method, a PLD method, an ALD method, or the like, but is preferably formed using an ALD method, which has good coverage, like the insulating film 125f. .
- an insulating film 126f that will later become the insulating layer 126 is formed on the protective film 147f (FIG. 13A).
- an organic material for example, can be used as the insulating film 126f.
- the insulating film 126f can be, for example, a color resist.
- the insulating film 126f can be formed by a spin coating method, a spray method, a screen printing method, a painting method, or the like.
- an insulating layer 126 is formed between the adjacent EL layer 112 and PD layer 155 (FIG. 13B).
- a photosensitive material such as a color resist
- the insulating layer 126 can be formed without providing a resist mask or an etching mask such as a hard mask.
- a photosensitive material such as a color resist can be processed only by exposure and development steps, the insulating layer 126 can be formed without using dry etching, for example. Therefore, the process can be simplified. Further, damage to the EL layer 112 and the PD layer 155 due to etching of the insulating film 126f can be reduced.
- the protective film 147f is formed and the insulating film 126f is formed over the protective film 147f, whereby the insulating film 126f can be prevented from contacting the insulating layer 127.
- FIG. 1 As a result, even when a positive resist is used as the insulating layer 127, the insulating layer 127 can be prevented from dissolving and disappearing during the development of the insulating film 126f. Therefore, the range of material selection for the insulating layer 127 can be widened. Note that after the insulating layer 126 is formed, the protective film 147f may be formed over the insulating layer 126, and the insulating layer 127 may be formed over the protective film 147f.
- the protective layer 147 is formed by etching the protective film 147f (FIG. 13C).
- the protective film 147f is located under the insulating layer 126 and over the insulating layer 127, and can be etched using the insulating layer 126 as a mask. Therefore, a protective layer 147 is formed so as to overlap with the insulating layer 126 .
- the etching of the protective film 147f can be performed by the same method as the etching of the sacrificial film 144a.
- the protective film 147f can be etched by a wet etching method.
- the protective film 147f may be etched by a dry etching method.
- the sacrificial layer 145a is etched to form the protective layer 146, and the insulating film 125f is etched to form the insulating layer 125 (FIG. 14A).
- the sacrificial layer 145a can be etched by, for example, a wet etching method, and the insulating film 125f can be etched by a dry etching method.
- vacuum baking is performed to remove water adsorbed on the surface of the EL layer 112 and the surface of the PD layer 155, for example.
- vacuum baking is preferably performed in a temperature range that does not alter the organic compounds contained in the EL layer 112 and the PD layer 155, for example, 70° C. or higher and 120° C. or lower, more preferably 80° C. or higher and 100° C. You can do it below.
- the vacuum baking process may not be performed.
- a common layer 114 is formed over the EL layer 112 , the PD layer 155 , the insulating layer 126 , the insulating layer 127 , and the connection electrode 113 .
- a common electrode 115 is formed on the common layer 114, and a protective layer 121 is formed on the common electrode 115 (FIG. 14B).
- the display device 100 can be manufactured.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, as a television device, a desktop or notebook personal computer, a monitor for computers, a digital signage, and a large game machine such as a pachinko machine. In addition to equipment, it can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, or sound reproducing devices.
- FIG. 15 shows a perspective view of the display device 100
- FIG. 16A shows a cross-sectional view of the display device 100. As shown in FIG.
- the display device 100 has a structure in which a substrate 101 and a substrate 105 are bonded together.
- the substrate 105 is clearly indicated by dashed lines.
- the display device 100 includes a display portion 107, a connection portion 140, a circuit 164, wirings 165, and the like.
- FIG. 15 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100 . Therefore, the configuration shown in FIG. 15 can also be said to be a display module including the display device 100, an IC (integrated circuit), and an FPC.
- a display device in which a connector such as an FPC is attached to a substrate of the display device, or a display device in which an IC is mounted on the substrate is called a display module.
- the connecting portion 140 is provided outside the display portion 107 .
- the connection portion 140 can be provided along one side or a plurality of sides of the display portion 107 .
- the number of connection parts 140 may be singular or plural.
- FIG. 15 shows an example in which the connecting portion 140 is provided so as to surround the four sides of the display portion.
- the connection portion 140 the common electrode of the light emitting element and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.
- a scanning line driver circuit can be used.
- the wiring 165 has a function of supplying signals and power to the display portion 107 and the circuit 164 .
- the signal and power are input to the wiring 165 from the outside through the FPC 172 or from the IC 173 .
- FIG. 15 shows an example in which an IC 173 is provided on the substrate 101 by a COG method or a COF (Chip On Film) method.
- a COG method or a COF (Chip On Film) method.
- the IC 173 for example, an IC having a scanning line driving circuit or a signal line driving circuit can be applied.
- the display device 100 and the display module may be configured without an IC.
- the IC may be mounted on the FPC by, for example, the COF method.
- part of the region including the FPC 172, part of the circuit 164, part of the display portion 107, part of the connection portion 140, and part of the region including the end portion of the display device 100 are cut off.
- An example of a cross section is shown.
- FIG. 16A shows a configuration in which an insulating layer 127 is provided on the insulating layer 125 except for the display portion 107 .
- the insulating layer 126 may be provided on at least part of the area on the insulating layer 125 other than the display portion 107 .
- a display device 100 illustrated in FIG. 16A includes a transistor 201 , a transistor 205 , a light emitting element 130 , a light receiving element 150 , and the like between substrates 101 and 105 .
- a light emitting element 130G and a light emitting element 130B are shown.
- the substrate 105 like the substrate 101, has a property of transmitting visible light.
- a substrate similar to the substrate that can be used as the substrate 101 can be used as the substrate 105.
- the light-emitting element 130 and the light-receiving element 150 have the laminated structure shown in FIG. 1B, except for the difference in the configuration of the pixel electrodes.
- Embodiment 1 can be referred to for details of the light emitting element 130 and the light receiving element 150 .
- the light emitting element 130 has a conductive layer 123 and a conductive layer 129 over the conductive layer 123 .
- the light receiving element 150 has a conductive layer 131 , a conductive layer 123 over the conductive layer 131 , and a conductive layer 129 over the conductive layer 123 .
- one or both of the conductive layers 123 and 129 can be called pixel electrodes.
- the conductive layer 123 can be provided to cover the conductive layer 131, for example.
- the conductive layer 123 is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 103.
- the end portion of the conductive layer 123 and the end portion of the conductive layer 129 are aligned or substantially aligned; however, the present invention is not limited to this.
- the conductive layer 129 may be provided so as to cover the end portion of the conductive layer 123 .
- conductive layer 131 is reflective to visible light.
- each of the conductive layers 123 and 129 has a property of transmitting visible light.
- a recess is formed in the conductive layers 131 and 123 so as to cover the opening provided in the insulating layer 103 .
- a layer 128 is embedded in the recess.
- Layer 128 has the function of planarizing the recesses of conductive layer 123 .
- a conductive layer 129 electrically connected to the conductive layer 123 is provided over the conductive layer 123 and the layer 128 . Therefore, the region overlapping with the concave portion of the conductive layer 123 can also be used as a light emitting region, and the aperture ratio of the pixel can be increased. Note that, for example, in the case where the area of the layer 128 when viewed from above is sufficiently smaller than the area of the conductive layer 123 when viewed from above, the conductive layer 129 may not be provided.
- the layer 128 can be a layer that transmits visible light. Also, the layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for layer 128 . In particular, layer 128 is preferably formed using an insulating material.
- an insulating layer containing an organic material can be preferably used.
- an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimideamide resin, a siloxane resin, a benzocyclobutene resin, a phenol resin, precursors of these resins, or the like can be applied.
- a photosensitive resin can be used as the layer 128 .
- a positive material or a negative material can be used for the photosensitive resin.
- the layer 128 can be formed only through exposure and development steps, and the influence of dry etching, wet etching, or the like on the surface of the conductive layer 123 can be reduced. Further, when the layer 128 is formed using a negative photosensitive resin, the layer 128 can be formed using the same photomask (exposure mask) used for forming the opening of the insulating layer 103 in some cases. be.
- the top and side surfaces of the conductive layer 129 are covered with the EL layer 112 or the PD layer 155 . Note that the side surfaces of the conductive layer 129 do not have to be covered with the EL layer 112 or the PD layer 155 . Further, part of the top surface of the conductive layer 129 does not have to be covered with the EL layer 112 or the PD layer 155 .
- a protective layer 146 is provided to cover part of the top surface of the EL layer 112
- a protective layer 146 is provided to cover part of the top surface of the PD layer 155 .
- an insulating layer 125 is provided so as to cover the top surface and side surfaces of the protective layer 146 , the side surfaces of the EL layer 112 , and the side surfaces of the PD layer 155 .
- an insulating layer 126 is provided between the EL layer 112 and the PD layer 155 over the insulating layer 125
- an insulating layer 127 is provided over the insulating layer 125 between two adjacent EL layers 112 .
- an insulating layer 126 can be provided between the adjacent EL layer 112 and the PD layer 155, and an insulating layer 127 can be provided in other regions.
- a common layer 114 is provided over the EL layer 112 , the PD layer 155 , the insulating layer 126 , and the insulating layer 127 , and a common electrode 115 is provided over the common layer 114 .
- the common layer 114 and the common electrode 115 are films connected in common to the plurality of light emitting elements 130 and light receiving elements 150, respectively.
- a protective layer 121 is provided over the light emitting element 130 and the light receiving element 150 .
- impurities such as water are prevented from entering the light-emitting element 130 and the light-receiving element 150, and the reliability of the light-emitting element 130 and the light-receiving element 150 is improved. can be enhanced.
- the protective layer 121 and the substrate 105 are adhered via the adhesive layer 142 .
- a solid sealing structure, a hollow sealing structure, or the like can be applied to the sealing of the light emitting element.
- the space between substrate 105 and substrate 101 is filled with an adhesive layer 142 to apply a solid sealing structure.
- the space may be filled with an inert gas (nitrogen, argon, or the like) to apply a hollow sealing structure.
- the adhesive layer 142 may be provided so as not to overlap the light emitting element 130 and the light receiving element 150 .
- the space may be filled with a resin different from the adhesive layer provided in the frame shape.
- connection electrode 113 is provided on the insulating layer 103 in the connection portion 140 .
- the connection electrode 113 has a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layer 123 and a conductive film obtained by processing the same conductive film as the conductive layer 129.
- a side surface of the connection electrode 113 is covered with a protective layer 146 .
- An insulating layer 125 is provided over the protective layer 146 and an insulating layer 127 is provided over the insulating layer 125 .
- a common layer 114 is provided on the connection electrode 113 , and a common electrode 115 is provided on the common layer 114 .
- connection electrode 113 and the common electrode 115 are electrically connected through the common layer 114 .
- the common layer 114 may not be formed in the connecting portion 140 . In this case, the connection electrode 113 and the common electrode 115 are directly contacted and electrically connected.
- Both the transistor 201 and the transistor 205 are formed over the substrate 101 . These transistors can be made with the same material and the same process.
- An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 103 are provided in this order over the substrate 101 .
- Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
- Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
- An insulating layer 215 is provided over the transistor.
- An insulating layer 103 is provided to cover the transistor and function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
- a material into which impurities such as water and hydrogen are difficult to diffuse is preferably used for at least one insulating layer that covers the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
- An inorganic insulating film is preferably used for each of the insulating layers 211 , 213 , and 215 .
- the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
- a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
- two or more of the insulating films described above may be laminated and used.
- An organic insulating layer is suitable for the insulating layer 103 that functions as a planarizing layer.
- Materials that can be used for the organic insulating layer include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
- the insulating layer 103 may have a laminated structure of an organic insulating layer and an inorganic insulating film. The outermost layer of the insulating layer 103 preferably functions as an etching protection film.
- recesses in the insulating layer 103 can be suppressed when the conductive layer 123, the conductive layer 129, or the like is processed.
- recesses may be provided in the insulating layer 103 when the conductive layer 123, the conductive layer 129, or the like is processed.
- the transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as sources and drains, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
- the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
- the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
- the conductive layers 222a and 222b preferably transmit visible light.
- the substrate 101, the conductive layers 123, 128, 129, the insulating layer 127, the common electrode 115, the substrate 105, and the like can transmit visible light.
- light 135 can be transmitted. Therefore, the user of the display device 100 can see the rear view (transmission image) as a real image through the display device 100 . Therefore, when at least part of the layers forming the transistors 201 and 205 transmit visible light, the transmittance of the light 135 in the display device 100 can be increased.
- the conductive layers 221 and 223 may transmit visible light or may reflect visible light.
- transmittance of the light 135 in the display device 100 can be increased.
- the conductive layers 221 and 223 are reflective to visible light, the light 135 can be prevented from entering the semiconductor layer 231 . Therefore, since damage to the semiconductor layer 231 can be reduced, the reliability of the display device 100 can be improved.
- FIG. 16A shows light 136G emitted from the EL layer 112G, light 136B emitted from the EL layer 112B, and light 137 incident on the PD layer 155.
- the display device 100 can be a dual emission display device.
- the structure of the transistor included in the display device of this embodiment There is no particular limitation on the structure of the transistor included in the display device of this embodiment.
- a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
- a top-gate transistor structure or a bottom-gate transistor structure may be used.
- gates may be provided above and below a semiconductor layer in which a channel is formed.
- a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
- a transistor may be driven by connecting two gates and applying the same signal to them.
- the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
- the crystallinity of a semiconductor material used for a transistor is not particularly limited, either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region). may be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
- a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
- the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
- crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.
- a transistor using silicon for a channel formation region may be used.
- Silicon includes monocrystalline silicon, polycrystalline silicon, amorphous silicon, and the like.
- a transistor including low-temperature polysilicon (LTPS) in a semiconductor layer hereinafter also referred to as an LTPS transistor
- the LTPS transistor has high field effect mobility and good frequency characteristics.
- a Si transistor such as an LTPS transistor
- a circuit that needs to be driven at a high frequency for example, a source driver circuit
- OS transistors have much higher field-effect mobility than transistors using amorphous silicon.
- an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display device can be reduced.
- the off-current value of the OS transistor per 1 ⁇ m channel width at room temperature is 1 aA (1 ⁇ 10 ⁇ 18 A) or less, 1 zA (1 ⁇ 10 ⁇ 21 A) or less, or 1 yA (1 ⁇ 10 ⁇ 24 A).
- the off current value of the Si transistor per 1 ⁇ m channel width at room temperature is 1 fA (1 ⁇ 10 ⁇ 15 A) or more and 1 pA (1 ⁇ 10 ⁇ 12 A) or less. Therefore, it can be said that the off-state current of the OS transistor is about ten digits lower than the off-state current of the Si transistor.
- the amount of current flowing through the light emitting element is necessary to increase the amount of current flowing through the light emitting element.
- the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in the source-drain current with respect to the change in the gate-source voltage as compared with the Si transistor. Therefore, by applying an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
- the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, stable current can be supplied to the light-emitting element even when the current-voltage characteristics of the light-emitting element vary. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting element can be stabilized.
- the semiconductor layer includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
- M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
- an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
- oxides containing indium, tin, and zinc are preferably used.
- oxides containing indium, gallium, tin, and zinc are preferably used.
- an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used.
- an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.
- the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
- the transistor included in the circuit 164 and the transistor included in the display portion 107 may have the same structure or different structures.
- the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
- the plurality of transistors included in the display portion 107 may all have the same structure, or may have two or more types.
- All of the transistors in the display portion 107 may be OS transistors, all of the transistors in the display portion 107 may be Si transistors, or some of the transistors in the display portion 107 may be OS transistors and the rest may be Si transistors. good.
- an LTPS transistor is preferably used as a transistor that functions as a switch for controlling conduction and non-conduction between wirings
- an LTPS transistor is preferably used as a transistor that controls current.
- one of the transistors included in the display portion 107 functions as a transistor for controlling current flowing through the light-emitting element and can be called a driving transistor.
- One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting element.
- An LTPS transistor is preferably used as the driving transistor. This makes it possible to increase the current flowing through the light emitting element in the pixel circuit.
- the other transistor included in the display portion 107 functions as a switch for controlling selection/non-selection of pixels and can also be called a selection transistor.
- the gate of the select transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the signal line.
- An OS transistor is preferably used as the selection transistor.
- the display device of one embodiment of the present invention can have high aperture ratio, high definition, high display quality, and low power consumption.
- the display device of one embodiment of the present invention includes an OS transistor and a light-emitting element with an MML (metal maskless) structure.
- MML metal maskless
- leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting elements also referred to as lateral leakage current, side leakage current, or the like
- an observer can observe any one or more of sharpness of the image, sharpness of the image, high saturation, and high contrast ratio.
- the leakage current that can flow in the transistor and the lateral leakage current between light-emitting elements are extremely low, so that light leakage that can occur during black display, for example, can be minimized.
- 16B1 and 16B2 show other configuration examples of the transistor.
- the transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
- a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
- the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
- the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i.
- an insulating layer 218 may be provided to cover the transistor.
- the transistor 209 illustrated in FIG. 16B1 illustrates an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231 .
- the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
- One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
- the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
- the structure shown in FIG. 16B2 can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
- the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low resistance regions 231n through openings in the insulating layer 215, respectively.
- a connection portion 204 is provided in a region of the substrate 101 where the substrate 105 does not overlap.
- the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242 .
- the conductive layer 166 has a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layer 123 and a conductive film obtained by processing the same conductive film as the conductive layer 129 is given. show.
- the conductive layer 166 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 242 .
- various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used.
- these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins.
- a material with low moisture permeability such as epoxy resin is preferable.
- a two-liquid mixed type resin may be used.
- an adhesive sheet may be used.
- connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
- ACF anisotropic conductive film
- ACP anisotropic conductive paste
- materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
- indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, a conductive oxide such as zinc oxide containing gallium, or graphene can be used.
- metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
- a nitride of the metal material eg, titanium nitride
- it is preferably thin enough to have translucency.
- a stacked film of any of the above materials can be used as the conductive layer.
- a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.
- conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.
- Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. .
- FIG. 17 is a modification of the configuration shown in FIG. 16A and shows an example in which a light shielding layer 118 is provided on the insulating layer 126.
- FIG. 17 shows an example in which a light shielding layer 118 is provided on the surface of the substrate 105 on the substrate 101 side.
- the display device 100 illustrated in FIG. 17 can be a display device that can perform imaging with low noise and high imaging sensitivity.
- FIG. 18 is a modification of the configuration shown in FIG. 17, and shows an example in which the light shielding layer 118 is provided not only on the insulating layer 126 but also below the insulating layer 126.
- FIG. 18 shows an example in which the light shielding layer 118 is provided on the insulating layer 215 in addition to the substrate 101 side surface of the substrate 105 .
- the display device 100 can be a dual emission display device. Therefore, by providing the light shielding layer 118 both above the insulating layer 126 and below the insulating layer 126, for example, part of the light emitted from the EL layer 112 adjacent to the PD layer 155 is prevented from entering the PD layer 155 due to stray light. , can be suitably suppressed. Therefore, the display device 100 illustrated in FIG. 18 can be a display device that can perform imaging with low noise and high imaging sensitivity. Note that the light-blocking layer 118 may be provided under the insulating layer 126 and the light-blocking layer 118 may not be provided over the insulating layer 126 .
- FIG. 19 is a modification of the structure shown in FIG. 17, and differs from the structure shown in FIG.
- external light can be prevented from passing through the circuit 164 and the connection portion 140 .
- FIGS. 20A to 20D show cross-sectional structures of a region 138 including the conductive layers 123 and 128 and their periphery.
- FIG. 16A shows an example in which the top surface of the layer 128 and the top surface of the conductive layer 123 are substantially aligned
- the present invention is not limited to this.
- the top surface of layer 128 may be higher than the top surface of conductive layer 123, as shown in FIG. 20A.
- the upper surface of the layer 128 has a convex shape that gently swells toward the center.
- the top surface of layer 128 may be lower than the top surface of conductive layer 123 .
- the upper surface of the layer 128 has a shape that is concave toward the center and gently recessed.
- the top of the layer 128 when the top surface of the layer 128 is higher than the top surface of the conductive layer 123 , the top of the layer 128 may be wider than the concave portion formed in the conductive layer 123 . At this time, a portion of layer 128 may be formed over a portion of the generally planar region of conductive layer 123 .
- a recess may be formed in a part of the upper surface of the layer 128 in some cases.
- the recess has a shape that is gently recessed toward the center.
- FIG. 21 is a perspective view of the display device 100.
- FIG. FIG. 21 is a modification of the display device 100 shown in FIG. 22 is a cross-sectional view of the display device 100 shown in FIG. 21. As shown in FIG.
- the display device 100 shown in FIGS. 21 and 22 includes a substrate 253 instead of the substrate 101 and a substrate 106 instead of the substrate 105 .
- An insulating layer 262 is provided over the substrate 253 with an adhesive layer 255 interposed therebetween.
- the substrate 253 and the insulating layer 262 are bonded together by the adhesive layer 255 .
- the transistors 201 and 205 are formed over the insulating layer 262 .
- the insulating layer 211 , the insulating layer 213 , the insulating layer 215 , and the insulating layer 103 are provided in this order over the insulating layer 262 .
- an insulating layer 262 is formed over a manufacturing substrate, and each transistor, the light emitting element 130 , the light receiving element 150 , and the like are formed over the insulating layer 262 .
- the substrate 106 is attached to the light emitting element 130 and the light receiving element 150 with the adhesive layer 142 .
- a substrate 253 is attached to the surface exposed by peeling the manufacturing substrate with an adhesive layer 255 , so that each component formed over the manufacturing substrate is transferred to the substrate 253 .
- the substrates 253 and 106 transmit visible light. Further, since the substrates 253 and 106 are flexible, the substrates 253 and 106 are flexible substrates. This allows the display device 100 to have flexibility. That is, the display device 100 can be used as a flexible display.
- polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethylmethacrylate resin, polycarbonate (PC) resin, polyethersulfone, etc. (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PES polyethersulfone
- polyamide resin nylon, aramid, etc.
- polysiloxane resin polystyrene resin
- polyamideimide resin polyurethane resin
- insulating layer 262 a material that can be used for the insulating layers 211, 213, and 215 can be used, and an inorganic insulating film is preferably used.
- adhesive layer 255 a material that can be used for the adhesive layer 142 can be used.
- the substrate 253, the conductive layer 123, the layer 128, the conductive layer 129, the insulating layer 127, the common electrode 115, the substrate 106, and the like can transmit visible light.
- light 135 can be transmitted. Therefore, the user of the display device 100 can see the rear view (transmission image) as a real image through the display device 100 . Therefore, when at least part of the layers forming the transistors 201 and 205 transmit visible light, the transmittance of the light 135 in the display device 100 can be increased.
- FIG. 23 is a modification of the configuration shown in FIG. 22, showing an example in which a light shielding layer 118 is provided on the insulating layer 126.
- FIG. 23 shows an example in which the light shielding layer 118 is provided on the substrate 253 side surface of the substrate 106 .
- the display device 100 illustrated in FIG. 23 can be a display device that can perform imaging with low noise and high imaging sensitivity.
- FIG. 24 is a modification of the configuration shown in FIG. 23, showing an example in which the light shielding layer 118 is provided not only on the insulating layer 126 but also below the insulating layer 126.
- FIG. 24 shows an example in which the light shielding layer 118 is provided on the insulating layer 215 in addition to the substrate 253 side surface of the substrate 106 .
- the display device 100 can be a dual emission display device. Therefore, by providing the light shielding layer 118 both above the insulating layer 126 and below the insulating layer 126, for example, part of the light emitted from the EL layer 112 adjacent to the PD layer 155 is prevented from entering the PD layer 155 due to stray light. , can be suitably suppressed. Therefore, the display device 100 illustrated in FIG. 24 can be a display device that can perform imaging with low noise and high imaging sensitivity. Note that the light-blocking layer 118 may be provided under the insulating layer 126 and the light-blocking layer 118 may not be provided over the insulating layer 126 .
- FIG. 25 is a modification of the configuration shown in FIG. 23, and differs from the configuration shown in FIG. When the display device 100 has the structure shown in FIG. 25, external light can be prevented from passing through the circuit 164 and the connection portion 140 .
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments or examples described herein.
- One embodiment of the present invention is a display panel that can be enlarged by arranging a plurality of display panels so that they partially overlap each other.
- at least the display panel located on the display surface side (upper side) has a portion that is adjacent to the display section and transmits visible light.
- the pixels of the display panel arranged on the lower side and the portion transmitting visible light of the display panel arranged on the upper side are provided so as to overlap each other. Accordingly, when the two display panels are viewed from the display surface side (in a plan view), the images displayed on them can be displayed seamlessly and continuously.
- a display panel of one embodiment of the present invention is a laminated panel including a first display panel and a second display panel.
- the first display panel has a first region, and the first region has first pixels and second pixels.
- the second display panel has a second area, a third area, and a fourth area.
- the second region has a third pixel, the third region has a function of transmitting visible light, and the fourth region has a function of blocking visible light.
- the second pixel of the first display panel and the third region of the second display panel have regions that overlap each other.
- the aperture ratio of the second pixel is preferably higher than that of the first pixel.
- the above-described display device including the light emitting element and the light receiving element can be used.
- the first pixel, the second pixel, and the third pixel has a light-emitting element and a light-receiving element.
- FIG. 26A is a schematic top view of a display panel 500 included in the display panel of one embodiment of the present invention.
- the configuration of the display panel 500 the configuration of the display device 100 shown in FIGS. 22 to 25 can be applied.
- W indicates the width. The same applies to drawings other than FIG. 26A.
- the display panel 500 includes a display portion 501, a region 510 adjacent to the display portion 501 and transmitting visible light, and a region 520 having a portion blocking visible light.
- an image can be displayed on the display portion 501 and an image can be captured by the display portion 501 .
- a pair of substrates forming the display panel 500 and a sealing material for sealing a display element sandwiched between the pair of substrates may be provided.
- a material that transmits visible light is used for the member provided in the region 510 .
- the region 520 is provided with wiring electrically connected to pixels included in the display portion 501, for example.
- a driver circuit for driving pixels a scanning line driver circuit, a signal line driver circuit, and the like
- a circuit such as a protection circuit may be provided.
- the region 520 also includes a region provided with a terminal (also referred to as a connection terminal) that is electrically connected to an external terminal or a wiring layer, a wiring that is electrically connected to the terminal, or the like.
- FIG. 26B is a schematic top view showing a configuration example of a display panel 550 having the display panel 500 shown in FIG. 26A.
- FIG. 26B shows an example in which the display panel 550 has three display panels 500 .
- a display panel 550 shown in FIG. 26B includes a display panel 500a, a display panel 500b, and a display panel 500c.
- a part of the display panel 500b is arranged to overlap the upper side (display surface side) of the display panel 500a. Specifically, the display portion 501a of the display panel 500a and the visible light transmitting region 510b of the display panel 500b overlap each other, and the display portion 501a of the display panel 500a and the visible light blocking region 520b of the display panel 500b are overlapped. are arranged so that they do not overlap.
- a part of the display panel 500c is arranged so as to overlap the upper side (display surface side) of the display panel 500b. Specifically, the display portion 501b of the display panel 500b and the visible light transmitting region 510c of the display panel 500c overlap each other, and the display portion 501b of the display panel 500b and the visible light blocking region 520c of the display panel 500c are overlapped. are arranged so that they do not overlap.
- the entire display portion 501a can be viewed from the display surface side.
- the entire display portion 501b can be viewed from the display surface side by overlapping the area 510c. Therefore, it is possible to use a region in which the display portions 501 a , 501 b , and 501 c are seamlessly arranged as the display portion 551 of the display panel 550 .
- the display panel 550 can enlarge the display portion 551 by the number of the display panels 500 .
- a display panel having an imaging function that is, a display panel having pixels provided with light-emitting elements and light-receiving elements
- the entire display portion 551 can be used as an imaging region. can be done.
- FIG. 26B shows a configuration in which a plurality of display panels 500 are stacked in one direction
- the plurality of display panels 500 may be stacked in two directions, the vertical direction and the horizontal direction.
- FIG. 27A is a schematic top view showing an example of a display panel 500 in which the shape of the region 510 is different from that of FIG. 26A.
- a display panel 500 shown in FIG. 27A has regions 510 that transmit visible light along two sides of a display portion 501 .
- FIG. 27B is a schematic perspective view of a display panel 550 in which two display panels 500 shown in FIG. 27A are arranged vertically and two horizontally.
- FIG. 27C is a schematic perspective view of the display panel 550 viewed from the side opposite to the display surface side.
- a region along the short side of the display portion 501a of the display panel 500a and a portion of the region 510b of the display panel 500b are provided so as to overlap each other.
- a region along the long side of the display portion 501a of the display panel 500a and a portion of the region 510c of the display panel 500c are provided so as to overlap each other.
- a region 510d of the display panel 500d is provided so as to overlap a region along the long side of the display portion 501b of the display panel 500b and a region along the short side of the display portion 501c of the display panel 500c.
- FIG. 27B a region in which the display portions 501a, 501b, 501c, and 501d are seamlessly arranged can be used as the display portion 551 of the display panel 550.
- a flexible material be used for the pair of substrates used for the display panel 500 so that the display panel 500 is flexible.
- a part of the display panel 500a is curved so that the display panel 500b overlaps the lower side of the display portion 501b of the adjacent display panel 500b. can be placed.
- the height of the upper surface of the display portion 501b of the display panel 500b is adjusted to match the height of the upper surface of the display portion 501a of the display panel 500a. can be gently curved. Therefore, the heights of the display portions can be the same except for the vicinity of the region where the display panels 500a and 500b overlap each other, and the display quality of an image displayed on the display portion 551 of the display panel 550 can be improved. .
- the thickness of the display panel 500 is thin.
- the thickness of the display panel 500 is preferably 1 mm or less, preferably 300 ⁇ m or less, more preferably 100 ⁇ m or less.
- a substrate for protecting the display portion 551 of the display panel 550 may be provided.
- the substrate may be provided for each display panel, or one substrate may be provided over a plurality of display panels.
- the contour shape of the display portion of the laminated panel can be made into various shapes such as non-rectangular shapes such as circles, ellipses, and polygons.
- the display panel 500 in a three-dimensional manner, it is possible to realize a laminated panel having a display portion having a three-dimensional shape such as a columnar shape, a spherical shape, or a hemispherical shape.
- FIG. 28A is a cross-sectional view illustrating a configuration example of a display panel 650 of one embodiment of the present invention.
- the display panel 650 can be configured such that the display panel 600a and the display panel 600b are sandwiched between the substrates 601a and 601b, and the adhesive layer 619 is filled.
- Materials similar to those of the substrates 253 and 106 described in Embodiment 2 can be used for the substrates 601a and 601b.
- a material similar to the material that can be used for the adhesive layer 255 described in Embodiment 2 can be used for the adhesive layer 619 .
- the structures of the display panel 600a and the display panel 600b the structures of the display device 100 shown in FIGS. 22 to 25 can be applied.
- the display panel 600 has flexibility similarly to the display panel 500 .
- Figure 28B is an enlarged view of the configuration shown in Figure 28A.
- the display panel 600a and the display panel 600b are bonded together by an adhesive layer 618 so that the edge of the display panel 600a and the edge of the display panel 600b overlap each other.
- the display panel 600a and the display panel 600b are bonded together by the adhesive layer 618 so that the end of the display portion of the display panel 600a and the end of the display portion of the display panel 600b overlap each other.
- the display panel 650 can have a structure in which the display panel 600a and the display panel 600b are stacked.
- a material similar to the material that can be used for the adhesive layer 619 can be used for the adhesive layer 618 .
- the display panel 650 has a structure in which a plurality of display panels 600 are stacked, so that the display panel 650 can be a large display panel like the display panel 600 . Moreover, the display panel 650 may have a structure in which three or more display panels 600 are stacked. By increasing the number of display panels 600 included in the display panel 650, the size of the display panel 650 can be further increased.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a display device of one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device).
- the display device of one embodiment of the present invention may have a structure including a light receiving/emitting element (also referred to as a light emitting/receiving device) and a light emitting element.
- a display device of one embodiment of the present invention includes a light receiving element and a light emitting element in a light emitting/receiving portion.
- light-emitting elements are arranged in a matrix in the light-receiving and light-emitting portion, and an image can be displayed by the light-receiving and light-emitting portion.
- the light receiving/emitting unit has light receiving elements arranged in a matrix, and the light emitting/receiving unit has one or both of an imaging function and a sensing function.
- the light receiving/emitting unit can be used for an image sensor, a touch sensor, or the like.
- the display device of one embodiment of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of parts of the electronic device can be reduced.
- the light-receiving element when an object reflects (or scatters) light emitted by a light-emitting element included in the light-receiving/emitting portion, the light-receiving element can detect the reflected light (or scattered light), so that the display device is dark. It is possible to capture an image or detect a touch operation even at a location.
- a light-emitting element included in the display device of one embodiment of the present invention functions as a display element (also referred to as a display device).
- an EL element such as OLED or QLED is preferably used.
- Examples of light-emitting substances that EL devices have include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), inorganic compounds (for example, quantum dot materials), and substances that exhibit heat-activated delayed fluorescence (heat-activated delayed fluorescent (TADF) material) and the like.
- LEDs, such as micro LED, can also be used as a light emitting element.
- a display device of one embodiment of the present invention has a function of detecting light using a light-receiving element.
- the display device can capture an image using the light receiving element.
- the display device can be used as a scanner.
- An electronic device to which the display device of one embodiment of the present invention is applied can acquire biometric data such as a fingerprint or a palmprint by using the function of an image sensor. That is, the biometric authentication sensor can be incorporated in the display device.
- the biometric authentication sensor By incorporating the biometric authentication sensor into the display device, compared to the case where the biometric authentication sensor is provided separately from the display device, the number of parts of the electronic device can be reduced, and the size and weight of the electronic device can be reduced. .
- the display device can detect a touch operation on an object using the light receiving element.
- a pn-type or pin-type photodiode can be used as the light receiving element.
- a light-receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light-receiving element and generates an electric charge. The amount of charge generated from the light receiving element is determined based on the amount of light incident on the light receiving element.
- organic photodiode having a layer containing an organic compound as the light receiving element.
- Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
- an organic EL element (also referred to as an organic EL device) is used as the light-emitting element, and an organic photodiode is used as the light-receiving element.
- An organic EL element and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL element.
- the number of film forming steps becomes enormous.
- the organic photodiode has many layers that can have the same structure as the organic EL element, the layers that can have the same structure can be formed at once, thereby suppressing an increase in the number of film forming processes.
- one of the pair of electrodes can be a layer common to the light receiving element and the light emitting element.
- at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a layer common to the light receiving element and the light emitting element. Since the light-receiving element and the light-emitting element have a common layer in this way, the number of film formations and the number of masks can be reduced, and the manufacturing steps and manufacturing cost of the display device can be reduced.
- a display device having a light-receiving element can be manufactured using an existing display device manufacturing apparatus and manufacturing method.
- subpixels exhibiting one color include light-receiving and emitting elements instead of light-emitting elements, and subpixels exhibiting other colors include light-emitting elements.
- the light receiving/emitting element has both a function of emitting light (light emitting function) and a function of receiving light (light receiving function). For example, if a pixel has three sub-pixels, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light emitting/receiving element and the other sub-pixels have a light emitting element. Configuration. Therefore, the light receiving/emitting portion of the display device of one embodiment of the present invention has a function of displaying an image using both the light receiving/emitting element and the light emitting element.
- the pixel can be provided with a light receiving function without increasing the number of sub-pixels included in the pixel.
- an imaging function and a sensing function can be added to the light emitting/receiving portion of the display device while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the display device. can. Therefore, in the display device of one embodiment of the present invention, the aperture ratio of the pixel can be increased and high definition can be easily achieved as compared with the case where the subpixel including the light-receiving element is provided separately from the subpixel including the light-emitting element. be.
- light-receiving and emitting elements and light-emitting elements are arranged in a matrix in the light-receiving and emitting portion, and an image can be displayed by the light-receiving and emitting portion.
- the light receiving/emitting unit can be used for an image sensor, a touch sensor, or the like.
- the display device of one embodiment of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is possible to capture an image or detect a touch operation even in a dark place.
- the light receiving and emitting device can be produced by combining an organic EL device and an organic photodiode.
- a light emitting/receiving element can be produced by adding an active layer of an organic photodiode to the laminated structure of the organic EL element.
- an increase in the number of film forming processes can be suppressed by collectively forming layers that can have a common configuration with the organic EL element.
- one of the pair of electrodes can be a layer common to the light receiving and emitting element and the light emitting element.
- at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a common layer for the light receiving and emitting device and the light emitting device.
- a layer included in the light receiving and emitting element may have different functions depending on whether the light receiving or emitting element functions as a light receiving element or as a light emitting element.
- constituent elements are referred to based on their functions when the light emitting/receiving element functions as a light emitting element.
- the display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving/light-receiving element.
- the light emitting element and the light emitting/receiving element function as a display element.
- the display device of this embodiment mode has a function of detecting light using a light emitting/receiving element.
- the light emitting/receiving element can detect light having a shorter wavelength than the light emitted by the light emitting/receiving element itself.
- the display device of this embodiment can capture an image using the light emitting/receiving element. Further, when the light emitting/receiving element is used as a touch sensor, the display device of this embodiment can detect a touch operation on an object using the light emitting/receiving element.
- the light emitting/receiving element functions as a photoelectric conversion element.
- the light emitting/receiving element can be manufactured by adding the active layer of the light receiving element to the structure of the light emitting element.
- the active layer of a pn-type or pin-type photodiode can be used for the light receiving and emitting element.
- an active layer of an organic photodiode having a layer containing an organic compound for the light receiving and emitting element.
- Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so they can be applied to various devices.
- a display device that is an example of the display device of one embodiment of the present invention is described below in more detail with reference to the drawings.
- FIG. 29A shows a schematic diagram of the display panel 200.
- the display panel 200 includes a substrate 207, a substrate 202, a light receiving element 212, a light emitting element 216R, a light emitting element 216G, a light emitting element 216B, a functional layer 203, and the like.
- the light emitting element 216R, the light emitting element 216G, the light emitting element 216B, and the light receiving element 212 are provided between the substrate 207 and the substrate 202.
- the light emitting element 216R, the light emitting element 216G, and the light emitting element 216B emit red (R), green (G), or blue (B) light, respectively.
- the light emitting element 216R, the light emitting element 216G, and the light emitting element 216B may be referred to as the light emitting element 216 when they are not distinguished from each other.
- the display panel 200 has a plurality of pixels arranged in a matrix.
- One pixel has one or more sub-pixels.
- One sub-pixel has one light-emitting element.
- a pixel has a structure having three sub-pixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)), or a sub-pixel (4 colors of R, G, B, and white (W), or 4 colors of R, G, B, Y, etc.) can be applied.
- the pixel has a light receiving element 212 .
- the light-receiving elements 212 may be provided in all the pixels, or may be provided in some of the pixels. Also, one pixel may have a plurality of light receiving elements 212 .
- FIG. 29A shows how a finger 220 touches the surface of substrate 202 .
- Part of the light emitted by light emitting element 216G is reflected at the contact portion between substrate 202 and finger 220 .
- a part of the reflected light is incident on the light receiving element 212, so that contact of the finger 220 with the substrate 202 can be detected. That is, the display panel 200 can function as a touch sensor.
- the functional layer 203 has a circuit for driving the light emitting element 216R, the light emitting element 216G, and the light emitting element 216B, and a circuit for driving the light receiving element 212.
- FIG. A switch, a transistor, a capacitor, a wiring, or the like is provided in the functional layer 203 . Note that when the light-emitting element 216R, the light-emitting element 216G, the light-emitting element 216B, and the light-receiving element 212 are driven by a passive matrix method, a structure without switches, transistors, or the like may be employed.
- Display panel 200 preferably has a function of detecting the fingerprint of finger 220 .
- FIG. 29B schematically shows an enlarged view of the contact portion when the finger 220 is in contact with the substrate 202 .
- FIG. 29B also shows the light emitting elements 216 and the light receiving elements 212 arranged alternately.
- Finger 220 has a fingerprint formed of concave and convex portions. Therefore, the convex portion of the fingerprint touches the substrate 202 as shown in FIG. 29B.
- Light reflected from a certain surface, interface, or the like includes specular reflection and diffuse reflection.
- Specularly reflected light is highly directional light whose incident angle and reflected angle are the same, and diffusely reflected light is light with low angle dependence of intensity and low directivity.
- the light reflected from the surface of the finger 220 is dominated by the diffuse reflection component of the specular reflection and the diffuse reflection.
- the light reflected from the interface between the substrate 202 and the atmosphere is predominantly a specular reflection component.
- the intensity of the light reflected by the contact surface or non-contact surface between the finger 220 and the substrate 202 and incident on the light receiving element 212 positioned directly below them is the sum of the specular reflection light and the diffuse reflection light. .
- the specularly reflected light (indicated by solid line arrows) is dominant. indicated by dashed arrows) becomes dominant. Therefore, the intensity of the light received by the light receiving element 212 located directly below the concave portion is higher than that of the light receiving element 212 located directly below the convex portion. Thereby, the fingerprint of the finger 220 can be imaged.
- a clear fingerprint image can be obtained by setting the array interval of the light receiving elements 212 to be smaller than the distance between two protrusions of the fingerprint, preferably smaller than the distance between adjacent recesses and protrusions. Since the distance between concave and convex portions of a human fingerprint is approximately 200 ⁇ m, for example, the array interval of the light receiving elements 212 is 400 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, even more preferably 100 ⁇ m or less, and even more preferably 100 ⁇ m or less. The thickness is 50 ⁇ m or less, and 1 ⁇ m or more, preferably 10 ⁇ m or more, and more preferably 20 ⁇ m or more.
- FIG. 29C shows an example of a fingerprint image captured by the display panel 200.
- the contour of the finger 220 is indicated by a dashed line and the contour of the contact portion 227 is indicated by a dashed line within the imaging range 228 .
- the fingerprint 222 with high contrast can be imaged due to the difference in the amount of light incident on the light receiving element 212 .
- the display panel 200 can also function as a touch sensor and a pen tablet.
- FIG. 29D shows a state in which the tip of the stylus 229 is in contact with the substrate 202 and slid in the direction of the dashed arrow.
- the diffusely reflected light diffused by the contact surface of the substrate 202 and the tip of the stylus 229 is incident on the light receiving element 212 located in the portion overlapping with the contact surface, thereby causing the tip of the stylus 229 to A position can be detected with high accuracy.
- FIG. 29E shows an example of trajectory 226 of stylus 229 detected by display panel 200 .
- the display panel 200 can detect the position of the object to be detected such as the stylus 229 with high positional accuracy, it is possible to perform high-definition drawing in a drawing application, for example.
- an electromagnetic induction touch pen, or the like it is possible to detect the position of an object to be detected with high insulation. Any material can be used, and various writing utensils (eg, brushes, glass pens, quill pens, etc.) can be used.
- FIGS. 29F to 29H examples of pixels applicable to the display panel 200 are shown in FIGS. 29F to 29H.
- the pixels shown in FIGS. 29F and 29G have a red (R) light emitting element 216R, a green (G) light emitting element 216G, a blue (B) light emitting element 216B, and a light receiving element 212, respectively.
- the pixels have pixel circuits for driving light emitting element 216R, light emitting element 216G, light emitting element 216B, and light receiving element 212, respectively.
- FIG. 29F is an example in which three light-emitting elements and one light-receiving element are arranged in a 2 ⁇ 2 matrix.
- FIG. 29G shows an example in which three light-emitting elements are arranged in a row, and one horizontally long light-receiving element 212 is arranged below them.
- the pixel shown in FIG. 29H is an example having a white (W) light emitting element 216W.
- W white
- four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.
- the pixel configuration is not limited to the above, and various arrangement methods can be adopted.
- a display panel 200A shown in FIG. 30A has light emitting elements 216IR in addition to the configuration illustrated in FIG. 29A.
- the light emitting element 216IR is a light emitting element that emits infrared light IR. Further, at this time, it is preferable to use an element capable of receiving at least the infrared light IR emitted by the light emitting element 216IR as the light receiving element 212 . Further, it is more preferable to use an element capable of receiving both visible light and infrared light as the light receiving element 212 .
- the infrared light IR emitted from the light emitting element 216IR is reflected by the finger 220, and part of the reflected light enters the light receiving element 212. , the position information of the finger 220 can be obtained.
- 30B to 30D show examples of pixels applicable to the display panel 200A.
- FIG. 30B shows an example in which three light-emitting elements are arranged in a row, and a light-emitting element 216IR and a light-receiving element 212 are arranged side by side below it.
- FIG. 30C is an example in which four light emitting elements including the light emitting element 216IR are arranged in a row, and the light receiving element 212 is arranged below them.
- FIG. 30D shows an example in which three light-emitting elements and light-receiving elements 212 are arranged around the light-emitting element 216IR.
- the positions of the light-emitting elements and the positions of the light-emitting elements and the light-receiving elements are interchangeable.
- a display panel 200B shown in FIG. 31A has a light emitting element 216B, a light emitting element 216G, and a light emitting/receiving element 213R.
- the light receiving/emitting element 213R has a function as a light emitting element that emits red (R) light and a function as a photoelectric conversion element that receives visible light.
- FIG. 31A shows an example in which the light receiving/emitting element 213R receives green (G) light emitted by the light emitting element 216G.
- the light receiving/emitting element 213R may receive blue (B) light emitted by the light emitting element 216B.
- the light emitting/receiving element 213R may receive both green light and blue light.
- the light receiving/emitting element 213R preferably receives light with a shorter wavelength than the light emitted by itself.
- the light receiving/emitting element 213R may be configured to receive light having a longer wavelength (for example, infrared light) than the light emitted by itself.
- the light emitting/receiving element 213R may be configured to receive light of the same wavelength as the light emitted by itself, but in that case, the light emitted by itself may also be received, resulting in a decrease in light emission efficiency. Therefore, the light emitting/receiving element 213R is preferably configured such that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.
- the light emitted by the light receiving and emitting element is not limited to red light. Also, the light emitted by the light emitting element is not limited to the combination of green light and blue light.
- the light emitting/receiving element can be an element that emits green or blue light and receives light of a wavelength different from the light emitted by itself.
- the light emitting/receiving element 213R serves as both a light emitting element and a light receiving element, so that the number of elements arranged in one pixel can be reduced. Therefore, it becomes easier to achieve higher definition, higher aperture ratio, higher resolution, and the like.
- 31B to 31I show examples of pixels applicable to the display panel 200B.
- FIG. 31B shows an example in which the light emitting/receiving element 213R, the light emitting element 216G, and the light emitting element 216B are arranged in a line.
- FIG. 31C shows an example in which light emitting elements 216G and light emitting elements 216B are arranged alternately in the vertical direction, and light emitting/receiving elements 213R are arranged horizontally.
- FIG. 31D is an example in which three light-emitting elements (light-emitting element 216G, light-emitting element 216B, and light-emitting element 216X and one light-receiving and light-emitting element are arranged in a 2 ⁇ 2 matrix.
- G, and B Lights other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). , or light such as ultraviolet light (UV).
- the light emitting element 216X exhibits infrared light
- the light receiving and emitting element has a function of detecting infrared light, or detects both visible light and infrared light.
- the wavelength of light detected by the light receiving and emitting element can be determined according to the application of the sensor.
- FIG. 31E shows two pixels. A region including three elements surrounded by dotted lines corresponds to one pixel. Each pixel has a light emitting element 216G, a light emitting element 216B, and a light emitting/receiving element 213R. In the left pixel shown in FIG. 31E, the light emitting element 216G is arranged in the same row as the light emitting/receiving element 213R, and the light emitting element 216B is arranged in the same column as the light emitting/receiving element 213R. In the right pixel shown in FIG.
- the light emitting element 216G is arranged in the same row as the light emitting/receiving element 213R, and the light emitting element 216B is arranged in the same column as the light emitting element 216G.
- the light emitting/receiving element 213R, the light emitting element 216G, and the light emitting element 216B are repeatedly arranged in both the odd and even rows, and in each column, the odd and even rows Light-emitting elements or light-receiving/light-receiving elements of different colors are arranged.
- FIG. 31F shows four pixels to which the pentile arrangement is applied, and two adjacent pixels have light-emitting elements or light-receiving and light-receiving elements exhibiting different combinations of two colors of light. Note that FIG. 31F shows the top surface shape of the light emitting element or the light emitting/receiving element.
- the upper left pixel and the lower right pixel shown in FIG. 31F have a light emitting/receiving element 213R and a light emitting element 216G. Also, the upper right pixel and the lower left pixel have a light emitting element 216G and a light emitting element 216B. That is, in the example shown in FIG. 31F, each pixel is provided with a light emitting element 216G.
- the shape of the upper surfaces of the light emitting element and the light emitting/receiving element is not particularly limited, and may be a circle, an ellipse, a polygon, a polygon with rounded corners, or the like.
- FIG. 31F shows an example in which the upper surface shape of the light emitting element and the light emitting/receiving element is a square (rhombus) inclined by approximately 45 degrees.
- the top surface shape of the light-emitting element and the light-receiving/emitting element for each color may be different from each other, or may be the same for some or all colors.
- the sizes of the light-emitting regions (or light-receiving and emitting regions) of the light-emitting elements and the light-receiving and light-receiving elements of each color may be different from each other, or may be the same for some or all colors.
- the area of the light emitting region of the light emitting element 216G provided in each pixel may be made smaller than the light emitting region (or light receiving/emitting region) of the other elements.
- FIG. 31G is a modification of the pixel arrangement shown in FIG. 31F. Specifically, the configuration of FIG. 31G is obtained by rotating the configuration of FIG. 31F by 45 degrees. In FIG. 31F, one pixel is described as having two elements, but as shown in FIG. 31G, one pixel can be considered to be composed of four elements.
- FIG. 31H is a modification of the pixel arrangement shown in FIG. 31F.
- the upper left pixel and lower right pixel shown in FIG. 31H have a light emitting/receiving element 213R and a light emitting element 216G.
- the upper right pixel and the lower left pixel have a light emitting/receiving element 213R and a light emitting element 216B. That is, in the example shown in FIG. 31H, each pixel is provided with a light emitting/receiving element 213R. Since the light emitting/receiving element 213R is provided in each pixel, the configuration shown in FIG. 31H can perform imaging with higher definition than the configuration shown in FIG. 31F. Thereby, for example, the accuracy of biometric authentication can be improved.
- FIG. 31I is a modification of the pixel array shown in FIG. 31H, and is a configuration obtained by rotating the pixel array by 45 degrees.
- one pixel is composed of four elements (two light emitting elements and two light emitting/receiving elements).
- one pixel has a plurality of light receiving and emitting elements having a light receiving function, so that an image can be captured with high definition. Therefore, the accuracy of biometric authentication can be improved.
- the imaging resolution can be the root twice the display resolution.
- a display device to which the configuration shown in FIG. 31H or FIG. and r (r is an integer greater than p and greater than q) light receiving and emitting elements.
- One of the first light emitting element and the second light emitting element emits green light and the other emits blue light.
- the light receiving/emitting element emits red light and has a light receiving function.
- a touch operation when a touch operation is detected using a light emitting/receiving element, it is preferable that light emitted from the light source is less visible to the user. Since blue light has lower visibility than green light, a light-emitting element that emits blue light is preferably used as a light source. Therefore, it is preferable that the light emitting/receiving element has a function of receiving blue light. It should be noted that the present invention is not limited to this, and a light-emitting element used as a light source can be appropriately selected according to the sensitivity of the light-receiving and emitting element.
- pixels with various arrangements can be applied to the display device of this embodiment.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device.
- a white light emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
- light-emitting devices can be broadly classified into a single structure and a tandem structure.
- a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
- the light-emitting layers may be selected such that the respective light-emitting colors of the two light-emitting layers are in a complementary color relationship. For example, by making the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light.
- the light-emitting device as a whole may emit white light by combining the light-emitting colors of the three or more light-emitting layers.
- a device with a tandem structure preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers.
- each light-emitting unit includes one or more light-emitting layers.
- luminance per predetermined current can be increased, and a light-emitting device with higher reliability than a single structure can be obtained.
- the white light emitting device when comparing the white light emitting device (single structure or tandem structure) and the light emitting device having the SBS structure, the light emitting device having the SBS structure can consume less power than the white light emitting device. If it is desired to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the white light emitting device is preferable because the manufacturing process is simpler than that of the SBS structure light emitting device, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
- a display device of one embodiment of the present invention includes a top-emission type in which light is emitted in a direction opposite to a substrate provided with a light-emitting element, a bottom-emission type in which light is emitted toward a substrate provided with a light-emitting element, and a double-sided display device. It may be of any dual-emission type that emits light to .
- a top-emission display device will be described as an example.
- a light-emitting layer 383 may be used when describing items common to the light-emitting layer 383R, the light-emitting layer 383G, and the like.
- the display device 380A shown in FIG. 32A includes a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.
- Each light-emitting element has a pixel electrode 371, a hole-injection layer 381, a hole-transport layer 382, a light-emitting layer, an electron-transport layer 384, an electron-injection layer 385, and a common electrode 375 stacked in this order.
- the light emitting element 370R has a light emitting layer 383R
- the light emitting element 370G has a light emitting layer 383G
- the light emitting element 370B has a light emitting layer 383B.
- the light-emitting layer 383R has a light-emitting material that emits red light
- the light-emitting layer 383G has a light-emitting material that emits green light
- the light-emitting layer 383B has a light-emitting material that emits blue light.
- the light-emitting element is an electroluminescence element that emits light toward the common electrode 375 by applying a voltage between the pixel electrode 371 and the common electrode 375 .
- the light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 which are stacked in this order.
- the light receiving element 370PD is a photoelectric conversion element that receives light incident from the outside of the display device 380A and converts it into an electric signal.
- the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode in both the light-emitting element and the light-receiving element.
- the light receiving element by driving the light receiving element with a reverse bias applied between the pixel electrode 371 and the common electrode 375, the light incident on the light receiving element can be detected, electric charge can be generated, and the electric charge can be extracted as a current.
- an organic compound is used for the active layer 373 of the light receiving element 370PD.
- the light-receiving element 370PD can share layers other than the active layer 373 with those of the light-emitting element. Therefore, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light-emitting element. Also, the light emitting element and the light receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing processes.
- the light receiving element 370PD and the light emitting element have a common configuration except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are separately formed.
- the configuration of the light receiving element 370PD and the light emitting element is not limited to this.
- the light receiving element 370PD and the light emitting element may have layers that are made separately from each other. It is preferable that the light-receiving element 370PD and the light-emitting element have at least one layer (common layer) used in common. As a result, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing steps.
- a conductive film that transmits visible light is used for the electrode from which light is extracted.
- a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
- the light-emitting device has at least a light-emitting layer 383 .
- layers other than the light-emitting layer 383 include a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, or a bipolar layer. (substances with high electron-transporting and hole-transporting properties) and the like.
- the light-emitting element and the light-receiving element can share one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
- the light-emitting element and the light-receiving element can each have one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
- the hole-injection layer is a layer that injects holes from the anode into the light-emitting element, and contains a material with high hole-injection properties.
- a material with high hole-injecting properties an aromatic amine compound or a composite material containing a hole-transporting material and an acceptor material (electron-accepting material) can be used.
- the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
- the hole-transporting layer is a layer that transports holes generated by incident light in the active layer to the anode.
- a hole-transporting layer is a layer containing a hole-transporting material.
- the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
- hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other hole-transporting materials. High material is preferred.
- the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer.
- the electron transport layer is a layer that transports electrons generated by incident light in the active layer to the cathode.
- the electron-transporting layer is a layer containing an electron-transporting material.
- an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
- electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, and imidazole derivatives.
- oxazole derivatives thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other nitrogen-containing heteroaromatic compounds
- a material having a high electron-transport property such as an electron-deficient heteroaromatic compound can be used.
- the electron injection layer is a layer that injects electrons from the cathode into the light-emitting element, and is a layer that contains a material with high electron injection properties.
- Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
- a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
- the light-emitting layer 383 is a layer containing a light-emitting substance.
- Emissive layer 383 can have one or more luminescent materials.
- the light-emitting substance a substance emitting light of blue, purple, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as appropriate.
- a substance that emits near-infrared light can be used as the light-emitting substance.
- Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, quantum dot materials, and the like.
- fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. mentioned.
- Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
- organometallic complexes especially iridium complexes
- platinum complexes, rare earth metal complexes, and the like, which serve as ligands, can be mentioned.
- the light-emitting layer 383 may contain one or more organic compounds (host material, assist material, or the like) in addition to the light-emitting substance (guest material).
- One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
- Bipolar materials or TADF materials may also be used as one or more organic compounds.
- the light-emitting layer 383 preferably includes, for example, a phosphorescent material and a combination of a hole-transport material and an electron-transport material that easily form an exciplex.
- ExTET Exciplex-Triplet Energy Transfer
- a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized at the same time.
- the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is higher than or equal to the HOMO level of the electron-transporting material.
- the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material.
- the LUMO and HOMO levels of a material can be derived from the material's electrochemical properties (reduction and oxidation potentials) measured by cyclic voltammetry (CV) measurements.
- Formation of the exciplex is performed by comparing, for example, the emission spectrum of the hole-transporting material, the emission spectrum of the electron-transporting material, and the emission spectrum of a mixed film in which these materials are mixed, and the emission spectrum of the mixed film is the emission spectrum of each material. It can be confirmed by observing a phenomenon that the spectrum shifts to a longer wavelength (or has a new peak on the longer wavelength side).
- the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the transient PL of the mixed film in which these materials are mixed are compared, and the transient PL lifetime of the mixed film is compared with the transient PL of each material.
- the transient PL described above may be read as transient electroluminescence (EL). That is, by comparing the transient EL of a hole-transporting material, the transient EL of a material having an electron-transporting property, and the transient EL of a mixed film thereof, and observing the difference in transient response, the formation of an exciplex can also be confirmed. can do.
- EL transient electroluminescence
- Active layer 373 includes a semiconductor.
- the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
- This embodiment mode shows an example in which an organic semiconductor is used as the semiconductor included in the active layer 373 .
- the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
- n-type semiconductor material of the active layer 373 examples include electron-accepting organic semiconductor materials such as fullerenes ( eg, C60 fullerene, C70 fullerene, etc.) and fullerene derivatives.
- Fullerenes have a soccer ball-like shape, which is energetically stable.
- Fullerene has both deep (low) HOMO and LUMO levels. Since fullerene has a deep LUMO level, it has an extremely high electron-accepting property (acceptor property). Normally, as in benzene, if the ⁇ -electron conjugation (resonance) spreads over the plane, the electron-donating (donor) property increases, but since fullerene is spherical, electron more receptive.
- a high electron-accepting property is useful as a light-receiving element because charge separation occurs quickly and efficiently.
- Both C 60 and C 70 have broad absorption bands in the visible light region, and C 70 is particularly preferable because it has a larger ⁇ -electron conjugated system than C 60 and has a wide absorption band in the long wavelength region.
- [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1' , 1′′,4′,4′′-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene -C60 (abbreviation: ICBA) and the like.
- PC70BM [6,6]-Phenyl-C71-butylic acid methyl ester
- PC60BM [6,6]-Phenyl-C61-butylic acid methyl ester
- ICBA 1,6]fullerene -C60
- n-type semiconductor material examples include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: Me-PTCDI).
- n-type semiconductor materials include 2,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl) ) bis(methan-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).
- Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives etc.
- Materials of the p-type semiconductor included in the active layer 373 include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin (II) Electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene.
- CuPc copper
- DBP tetraphenyldibenzoperiflanthene
- ZnPc zinc phthalocyanine
- II Electron-donating organic semiconductor materials such as phthalocyanine (SnPc), quinacridone, and rubrene.
- Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
- materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives and the like.
- the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
- the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
- a spherical fullerene as the electron-accepting organic semiconductor material and an organic semiconductor material having a nearly planar shape as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
- the active layer 373 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
- the active layer 373 may be formed by laminating an n-type semiconductor and a p-type semiconductor.
- Either a low-molecular-weight compound or a high-molecular-weight compound can be used for the light-emitting element and the light-receiving element, and an inorganic compound may be included.
- the layers constituting the light-emitting element and the light-receiving element can each be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
- a hole-transporting material or an electron-blocking material a polymer compound such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), or molybdenum oxide or copper iodide Inorganic compounds such as (CuI) can be used.
- an inorganic compound such as zinc oxide (ZnO) or an organic compound such as polyethyleneimine ethoxylate (PEIE) can be used as the electron-transporting material or the hole-blocking material.
- the light receiving device may have, for example, a mixed film of PEIE and ZnO.
- Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2 functioning as a donor is added to the active layer 373.
- Polymer compounds such as 1,3-diyl]]polymer (abbreviation: PBDB-T) or PBDB-T derivatives can be used.
- PBDB-T 1,3-diyl]]polymer
- PBDB-T derivatives a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
- a display device 380B shown in FIG. 32B differs from the display device 380A in that the light receiving element 370PD and the light emitting element 370R have the same configuration.
- the light receiving element 370PD and the light emitting element 370R have the active layer 373 and the light emitting layer 383R in common.
- the light-receiving element 370PD has a common configuration with a light-emitting element that emits light having a longer wavelength than the light to be detected.
- the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting elements 370R and 370G.
- the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.
- the number of film forming processes and the number of masks are reduced compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have layers that are separately formed. can be reduced. Therefore, manufacturing steps and manufacturing costs of the display device can be reduced.
- the margin for misalignment can be narrowed compared to a structure in which the light receiving element 370PD and the light emitting element 370R have separate layers. .
- the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. This can extend the life of the light emitting element.
- the display device can express high luminance. Also, it is possible to increase the definition of the display device.
- the light-emitting layer 383R has a light-emitting material that emits red light.
- the active layer 373 comprises an organic compound that absorbs light of wavelengths shorter than red (eg, one or both of green light and blue light).
- the active layer 373 preferably contains an organic compound that hardly absorbs red light and absorbs light with a wavelength shorter than that of red light. As a result, red light is efficiently extracted from the light emitting element 370R, and the light receiving element 370PD can detect light with a shorter wavelength than red light with high accuracy.
- the display device 380B an example in which the light emitting element 370R and the light receiving element 370PD have the same configuration is shown, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers with different thicknesses.
- a display device 380C shown in FIGS. 33A and 33B has a light receiving/emitting element 370SR, a light emitting element 370G, and a light emitting element 370B which emit red (R) light and have a light receiving function.
- the display device 380A can be used for the configuration of the light emitting element 370G and the light emitting element 370B.
- the light emitting/receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.
- the light emitting/receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.
- FIG. 33A shows a case where the light emitting/receiving element 370SR functions as a light emitting element.
- FIG. 33A shows an example in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light receiving/emitting element 370SR emits red light.
- FIG. 33B shows a case where the light emitting/receiving element 370SR functions as a light receiving element.
- FIG. 33B shows an example in which the light receiving/emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.
- the light emitting element 370B, the light emitting element 370G, and the light emitting/receiving element 370SR have pixel electrodes 371 and common electrodes 375, respectively.
- pixel electrode 371 functions as an anode
- common electrode 375 functions as a cathode
- the light emitting/receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, thereby detecting light incident on the light emitting/receiving element 370SR, generating electric charge, and extracting it as a current. .
- the light emitting/receiving element 370SR can be said to have a structure in which an active layer 373 is added to the light emitting element.
- the light emitting/receiving element 370SR can be formed in parallel with the formation of the light emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light emitting element.
- the light emitting element and the light emitting/receiving element can be formed on the same substrate. Therefore, one or both of an imaging function and a sensing function can be imparted to the display portion without significantly increasing the number of manufacturing steps.
- the stacking order of the light emitting layer 383R and the active layer 373 is not limited.
- 33A and 33B show an example in which an active layer 373 is provided on the hole transport layer 382 and a light emitting layer 383R is provided on the active layer 373.
- FIG. The stacking order of the light emitting layer 383R and the active layer 373 may be changed.
- the light receiving and emitting element may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
- the light receiving and emitting device may have other functional layers such as a hole blocking layer and an electron blocking layer.
- a conductive film that transmits visible light is used for the electrode on the side from which light is extracted.
- a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
- each layer constituting the light receiving and emitting element is the same as the functions and materials of the layers constituting the light emitting element and the light receiving element, so detailed description thereof will be omitted.
- FIGS. 33C to 33G show examples of laminated structures of light receiving and emitting elements.
- the light receiving and emitting device shown in FIG. 33C includes a first electrode 377, a hole injection layer 381, a hole transport layer 382, a light emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a second electrode. 378.
- FIG. 33C shows an example in which a light emitting layer 383 is provided on a hole transport layer 382 and an active layer 373 is laminated on the light emitting layer 383 .
- the active layer 373 and the light emitting layer 383R may be in contact with each other.
- a buffer layer is preferably provided between the active layer 373 and the light emitting layer 383R.
- the buffer layer preferably has hole-transporting properties and electron-transporting properties.
- at least one of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and the like can be used as the buffer layer.
- FIG. 33D shows an example of using a hole transport layer 382 as a buffer layer.
- a buffer layer between the active layer 373 and the light emitting layer 383R By providing a buffer layer between the active layer 373 and the light emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light emitting layer 383R to the active layer 373.
- the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light emitting/receiving element having a buffer layer between the active layer 373 and the light emitting layer 383R can provide high light emitting efficiency.
- FIG. 33E is an example having a layered structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light emitting layer 383R are layered in this order on a hole injection layer 381.
- the hole transport layer 382-2 functions as a buffer layer.
- the hole transport layer 382-1 and the hole transport layer 382-2 may contain the same material or may contain different materials. Further, the above layer that can be used for the buffer layer may be used instead of the hole-transport layer 382-2. Also, the positions of the active layer 373 and the light emitting layer 383R may be exchanged.
- the light emitting/receiving device shown in FIG. 33F differs from the light emitting/receiving device shown in FIG. 33A in that the hole transport layer 382 is not provided.
- the light receiving and emitting device may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
- the light receiving and emitting device may have other functional layers such as a hole blocking layer and an electron blocking layer.
- the light emitting/receiving element shown in FIG. 33G differs from the light emitting/receiving element shown in FIG. 33A in that it does not have the active layer 373 and the light emitting layer 383R but has a layer 389 that serves as both the light emitting layer and the active layer.
- Layers that serve as both a light-emitting layer and an active layer include, for example, an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R.
- a layer containing three materials can be used.
- the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor and the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance do not overlap each other. It is more preferable to be separated.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a pixel can have a structure in which a plurality of types of sub-pixels having light-emitting devices emitting different colors are provided.
- a pixel can be configured to have three types of sub-pixels.
- the three sub-pixels are red (R), green (G), and blue (B) sub-pixels, and yellow (Y), cyan (C), and magenta (M) sub-pixels. etc.
- the pixel may have four types of sub-pixels. Examples of the four sub-pixels include R, G, B, and white (W) sub-pixels and R, G, B, and Y sub-pixels.
- the arrangement of sub-pixels includes, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
- top surface shapes of sub-pixels include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, shapes with rounded corners of these polygons, ellipses, and circles.
- the top surface shape of the sub-pixel here corresponds to the top surface shape of the light emitting region of the light emitting device.
- a display device including a light-emitting device and a light-receiving device in a pixel
- contact or proximity of an object can be detected while displaying an image.
- an image can be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
- the pixels shown in FIGS. 34A, 34B, and 34C have sub-pixels G, sub-pixels B, sub-pixels R, and sub-pixels PS.
- a stripe arrangement is applied to the pixels shown in FIG. 34A.
- a matrix arrangement is applied to the pixels shown in FIG. 34B.
- the arrangement of pixels shown in FIG. 34C has a configuration in which three sub-pixels (sub-pixel R, sub-pixel G, and sub-pixel S) are vertically arranged next to one sub-pixel (sub-pixel B).
- the pixels shown in FIGS. 34D, 34E, and 34F have sub-pixel G, sub-pixel B, sub-pixel R, sub-pixel IR, and sub-pixel PS.
- FIGS. 34D, 34E, and 34F show examples in which one pixel is provided over two rows.
- Three sub-pixels (sub-pixel G, sub-pixel B, sub-pixel R) are provided in the upper row (first row), and two sub-pixels (one sub-pixel) are provided in the lower row (second row).
- a pixel PS and one sub-pixel IR) are provided.
- FIG. 34D three vertically elongated sub-pixels G, B, and R are arranged horizontally, and a sub-pixel PS and a horizontally elongated sub-pixel IR are horizontally arranged below them.
- FIG. 34E two horizontally long sub-pixels G and R are arranged in the vertical direction, and vertically long sub-pixels B are arranged horizontally, and below them are horizontally long sub-pixels IR and vertically long sub-pixels PS. are arranged side by side.
- FIG. 34F vertically long sub-pixels R, sub-pixels G, and sub-pixels B are arranged horizontally, and horizontally long sub-pixels IR and vertically long sub-pixels PS are horizontally arranged below them.
- 34E and 34F show the case where the area of the sub-pixel IR is the largest and the area of the sub-pixel PS is approximately the same as that of the sub-pixel B, for example.
- Sub-pixel R has a light-emitting device that emits red light.
- Sub-pixel G has a light-emitting device that emits green light.
- Sub-pixel B has a light-emitting device that emits blue light.
- Sub-pixel IR has a light-emitting device that emits infrared light.
- the sub-pixel PS has a light receiving device.
- the wavelength of light detected by the sub-pixel PS is not particularly limited, but the light-receiving device included in the sub-pixel PS is sensitive to the light emitted by the light-emitting device included in the sub-pixel R, sub-pixel G, sub-pixel B, or IR. It is preferable to have For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red, and light in an infrared wavelength range.
- the light receiving area of the sub-pixel PS is smaller than the light emitting area of the other sub-pixels.
- the sub-pixels PS can be used to capture images for biometric authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), faces, or the like.
- the sub-pixel PS can be used for a touch sensor (also called a direct touch sensor), a near-touch sensor (also called a hover sensor, a hover touch sensor, a non-contact touch sensor, or a touchless sensor), or the like.
- a touch sensor also called a direct touch sensor
- a near-touch sensor also called a hover sensor, a hover touch sensor, a non-contact touch sensor, or a touchless sensor
- the sub-pixel PS preferably detects infrared light. This enables touch detection even in dark places.
- a touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
- a touch sensor can detect an object by direct contact between the display device and the object.
- the near-touch sensor can detect the object even if the object does not touch the display device.
- the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
- the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
- the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust, virus, etc.) attached to the display device. It becomes possible to operate the device.
- the sub-pixels PS are provided in all the pixels included in the display device.
- the sub-pixel PS is used for a touch sensor, a near-touch sensor, or the like, high accuracy is not required compared to, for example, the case of capturing an image of a fingerprint. All you have to do is By making the number of sub-pixels PS included in the display device smaller than the number of sub-pixels R, for example, the detection speed can be increased.
- FIG. 34G shows an example of a pixel circuit of a sub-pixel having a light receiving device
- FIG. 34H shows an example of a pixel circuit of a sub-pixel having a light emitting device.
- the pixel circuit PIX1 shown in FIG. 34G has a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitor C2.
- a light receiving device PD a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitor C2.
- an example using a photodiode is shown as the light receiving device PD.
- the light receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and the drain of the transistor M11.
- the transistor M11 has its gate electrically connected to the wiring TX, and the other of its source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13.
- the transistor M12 has a gate electrically connected to the wiring RES and the other of the source and the drain electrically connected to the wiring V2.
- One of the source and the drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source and the drain is electrically connected to one of the source and the drain of the transistor M14.
- the transistor M14 has a gate electrically connected to the wiring SE and the other of the source and the drain electrically connected to the wiring OUT1.
- a constant potential is supplied to each of the wiring V1, the wiring V2, and the wiring V3.
- the wiring V2 is supplied with a potential higher than that of the wiring V1.
- the transistor M12 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M13 to the potential supplied to the wiring V2.
- the transistor M11 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving device PD.
- the transistor M13 functions as an amplifying transistor that outputs according to the potential of the node.
- the transistor M14 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading an output corresponding to the potential of the node by an external circuit connected to the wiring OUT1.
- the pixel circuit PIX2 shown in FIG. 34H has a light emitting device EL, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3.
- a light emitting device EL an example using a light-emitting diode is shown as the light-emitting device EL.
- an organic EL element it is preferable to use an organic EL element as the light emitting device EL.
- the transistor M15 has a gate electrically connected to the wiring VG, one of the source and the drain electrically connected to the wiring VS, and the other of the source and the drain connected to one electrode of the capacitor C3 and the gate of the transistor M16. Connect electrically.
- One of the source and drain of the transistor M16 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light emitting device EL and one of the source and drain of the transistor M17.
- the transistor M17 has a gate electrically connected to the wiring MS and the other of the source and the drain electrically connected to the wiring OUT2.
- a cathode of the light emitting device EL is electrically connected to the wiring V5.
- a constant potential is supplied to each of the wiring V4 and the wiring V5.
- the anode side of the light emitting device EL can be at a higher potential and the cathode side can be at a lower potential than the anode side.
- the transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2.
- the transistor M16 functions as a driving transistor that controls the current flowing through the light emitting device EL according to the potential supplied to its gate. When the transistor M15 is on, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission luminance of the light emitting device EL can be controlled according to the potential.
- the transistor M17 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M16 and the light emitting device EL to the outside through the wiring OUT2.
- transistor M11 the transistor M12, the transistor M13, and the transistor M14 included in the pixel circuit PIX1
- metal is added to semiconductor layers in which channels are formed.
- a transistor including an oxide (oxide semiconductor) is preferably used.
- a transistor using a metal oxide which has a wider bandgap and a lower carrier density than silicon, can achieve extremely low off-state current. Therefore, with the small off-state current, charge accumulated in the capacitor connected in series with the transistor can be held for a long time. Therefore, it is preferable to use transistors including an oxide semiconductor, particularly for the transistor M11, the transistor M12, and the transistor M15 which are connected in series to the capacitor C2 or the capacitor C3. Further, by using a transistor including an oxide semiconductor for other transistors, the manufacturing cost can be reduced.
- the off current value of the OS transistor per 1 ⁇ m channel width at room temperature is 1 aA (1 ⁇ 10 ⁇ 18 A) or less, 1 zA (1 ⁇ 10 ⁇ 21 A) or less, or 1 yA (1 ⁇ 10 ⁇ 24 A).
- the off current value of the Si transistor per 1 ⁇ m channel width at room temperature is 1 fA (1 ⁇ 10 ⁇ 15 A) or more and 1 pA (1 ⁇ 10 ⁇ 12 A) or less. Therefore, it can be said that the off-state current of the OS transistor is about ten digits lower than the off-state current of the Si transistor.
- transistors in which silicon is used as a semiconductor in which a channel is formed can be used for the transistors M11 to M17.
- highly crystalline silicon such as single crystal silicon or polycrystalline silicon because high field-effect mobility can be achieved and high-speed operation is possible.
- At least one of the transistors M11 to M17 may be formed using an oxide semiconductor, and the rest may be formed using silicon.
- transistors are shown as n-channel transistors in FIGS. 34G and 34H, p-channel transistors can also be used.
- the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are mixed in one region and periodically arranged.
- one or more layers each having one or both of a transistor and a capacitor are preferably provided at a position overlapping with the light receiving device PD or the light emitting device EL.
- the effective area occupied by each pixel circuit can be reduced, and a high-definition light receiving section or display section can be realized.
- the display device of one embodiment of the present invention can have a variable refresh rate.
- the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 0.01 Hz to 240 Hz) according to the content displayed on the display device.
- driving that reduces the power consumption of the display device by driving with a reduced refresh rate may be referred to as idling stop (IDS) driving.
- IDS idling stop
- the drive frequency of the touch sensor or the near touch sensor may be changed according to the refresh rate.
- the drive frequency of the touch sensor or the near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near-touch sensor can be increased.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a wearable electronic device for VR or AR can provide a 3D image by using parallax. In that case, it is necessary to display the image for the right eye in the field of view of the right eye and the image for the left eye in the field of view of the left eye, respectively.
- the shape of the display portion of the display device may be a horizontally long rectangular shape, but the pixels provided outside the field of view of the right eye and the left eye do not contribute to the display, so the pixels always display black. It will happen.
- the display portion of the display panel is divided into two regions for the right eye and the left eye, and pixels are not arranged in the outer region that does not contribute to the display.
- power consumption required for pixel writing can be reduced.
- the load on the source line, the gate line, and the like is reduced, display with a high frame rate is possible. As a result, a smooth moving image can be displayed, and a sense of reality can be enhanced.
- FIG. 35A shows a configuration example of the display panel.
- a left eye display section 702L and a right eye display section 702R are arranged inside the substrate 701.
- a driver circuit, wiring, an IC, an FPC, or the like may be arranged over the substrate 701 in addition to the display portions 702L and 702R.
- a display portion 702L and a display portion 702R shown in FIG. 35A have a square top surface shape.
- the top surface shape of the display portion 702L and the display portion 702R may be another regular polygon.
- 35B shows an example of a regular hexagon
- FIG. 35C shows an example of a regular octagon
- FIG. 35D shows an example of a regular decagon
- FIG. An example of a rectangular shape is shown.
- Polygons other than regular polygons may also be used.
- a regular polygon with rounded corners or a polygon may also be used.
- the straight line portion of the outline of each display section is not strictly a straight line, and there may be a stepped portion.
- a linear portion that is not parallel to the pixel arrangement direction has a stepped top surface shape.
- the user views the image without visually recognizing the shape of the pixels, even if the oblique outline of the display section is strictly stepped, it can be regarded as a straight line.
- the curved portion of the outline of the display section is strictly stepped, it can be regarded as a curved line.
- FIG. 35F shows an example in which the upper surface shape of the display section 702L and the display section 702R is circular.
- the upper surface shape of the display portion 702L and the display portion 702R may be left-right asymmetrical. Also, it does not have to be a regular polygon.
- FIG. 35G shows an example in which the upper surface shape of the display section 702L and the display section 702R is a left-right asymmetrical octagon.
- FIG. 35H shows an example of a regular heptagon. In this way, even when the upper surface shapes of the display portions 702L and 702R are asymmetrical, it is preferable that the display portions 702L and 702R are arranged symmetrically. As a result, it is possible to provide an image that does not give a sense of discomfort.
- FIG. 35I is an example of connecting the two circular display portions 702 in FIG. 35F.
- FIG. 35J is an example in which the two regular octagonal display portions 702 in FIG. 35C are connected.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a metal oxide used for an OS transistor preferably contains at least indium or zinc, more preferably indium and zinc.
- metal oxides include indium and M (where M is gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium). , hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
- M is preferably one or more selected from gallium, aluminum, yttrium and tin, more preferably gallium.
- the metal oxide can be formed by a sputtering method, a CVD method such as an MOCVD method, an ALD method, or the like.
- an oxide containing indium (In), gallium (Ga), and zinc (Zn) will be described as an example of a metal oxide.
- an oxide containing indium (In), gallium (Ga), and zinc (Zn) is sometimes called an In--Ga--Zn oxide.
- Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (polycrystal) and the like.
- the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
- XRD X-ray diffraction
- it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
- the GIXD method is also called a thin film method or a Seemann-Bohlin method.
- the XRD spectrum obtained by the GIXD measurement may be simply referred to as the XRD spectrum.
- the peak shape of the XRD spectrum is almost symmetrical.
- the shape of the peak of the XRD spectrum is left-right asymmetric.
- the asymmetric shape of the peaks in the XRD spectra clearly indicates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
- the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nanobeam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
- a diffraction pattern also referred to as a nanobeam electron diffraction pattern
- NBED nano beam electron diffraction
- the In-Ga-Zn oxide deposited at room temperature is in an intermediate state, neither single crystal nor polycrystal, nor an amorphous state, and is in an amorphous state. be done.
- oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
- CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
- a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
- CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
- the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
- each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
- the maximum diameter of the crystalline region is less than 10 nm.
- the size of the crystal region may be about several tens of nanometers.
- the CAAC-OS includes a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing gallium (Ga), zinc (Zn), and oxygen (
- In layer a layer containing indium (In) and oxygen
- Ga gallium
- Zn zinc
- oxygen oxygen
- it tends to have a layered crystal structure (also referred to as a layered structure) in which (Ga, Zn) layers are laminated.
- the (Ga, Zn) layer may contain indium.
- the In layer may contain gallium.
- the In layer may contain zinc.
- the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
- a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
- a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
- the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit lattice is not always regular hexagon and may be non-regular hexagon. Moreover, the distortion may have a lattice arrangement of pentagons, heptagons, or the like. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, and that the bond distance between atoms changes due to the substitution of metal atoms. It is considered to be for
- a crystal structure in which clear grain boundaries are confirmed is called a so-called polycrystal.
- a crystal grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-state current of a transistor, a decrease in field-effect mobility, or the like. Therefore, a CAAC-OS in which no clear grain boundaries are confirmed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
- a structure containing Zn is preferable for forming a CAAC-OS.
- In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
- a CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
- a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (eg, oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
- CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
- nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
- the nc-OS has minute crystals.
- the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
- nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
- an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
- an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
- an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
- an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
- an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
- An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
- An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
- CAC-OS relates to material composition.
- CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
- one or more metal elements are unevenly distributed in the metal oxide, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
- the mixed state is also called a mosaic shape or a patch shape.
- CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
- the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are represented by [In], [Ga], and [Zn], respectively.
- the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
- the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
- the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
- the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
- the first region is a region mainly composed of indium oxide, indium zinc oxide, and the like.
- the second region is a region containing gallium oxide, gallium zinc oxide, and the like as main components. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
- the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
- the CAC-OS can be formed, for example, by a sputtering method under conditions in which the substrate is not intentionally heated.
- a sputtering method one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film formation gas. good.
- an inert gas typically argon
- oxygen gas oxygen gas
- nitrogen gas nitrogen gas
- the flow rate ratio of the oxygen gas to the total flow rate of the film forming gas during film formation is preferably as low as possible.
- the flow ratio of the oxygen gas to the total flow rate of the film forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.
- an EDX mapping obtained using energy dispersive X-ray spectroscopy shows that a region containing In as a main component It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
- the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
- the second region is a region with higher insulation than the first region.
- the leakage current can be suppressed by distributing the second region in the metal oxide.
- CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act in a complementary manner to provide a switching function (turning ON/OFF). functions) can be given to the CAC-OS.
- a part of the material has a conductive function
- a part of the material has an insulating function
- the whole material has a semiconductor function.
- CAC-OS is most suitable for various semiconductor devices including display devices.
- Oxide semiconductors have various structures and each has different characteristics.
- An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
- an oxide semiconductor with low carrier concentration is preferably used for a transistor.
- the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
- the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
- a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
- an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
- the trap level density may also be low.
- the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
- Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.
- the impurities in the oxide semiconductor refer to, for example, substances other than the main components of the oxide semiconductor. For example, an element whose concentration is less than 0.1 atomic percent can be said to be an impurity.
- the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are equal to 2. ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
- the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
- the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
- the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
- oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
- part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
- the hydrogen concentration in the oxide semiconductor obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a display device of one embodiment of the present invention is a display device capable of so-called see-through display, in which an image is displayed over a background. Further, the display device of one embodiment of the present invention has an imaging function. Accordingly, the display device of one embodiment of the present invention can have a function of a touch sensor and a function of performing biometric authentication, for example. Further, the display device of one embodiment of the present invention can perform high-luminance, high-resolution, high-contrast, and high-definition display, consumes low power, and has high reliability.
- a display device of one embodiment of the present invention is, for example, a television device, a desktop or notebook personal computer, a monitor for a computer, a digital signage, or a large game machine such as a pachinko machine.
- a digital camera a digital video camera, a digital photo frame, a mobile phone, a mobile game machine, a mobile information terminal, an audio player, or the like.
- the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
- electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, devices for VR such as head-mounted displays, devices for AR such as eyeglasses, and devices that can be worn on the head.
- wearable devices also include devices for SR and devices for MR.
- the display device of this embodiment or an electronic device including the display device can be incorporated along the inner wall or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
- the display device of one embodiment of the present invention is capable of see-through display, it can be installed on a transparent structure such as a windowpane, a showcase, a glass door, or a show window, or the structure can be used as a display device. can be replaced with
- FIG. 36A illustrates an example in which the display device of one embodiment of the present invention is applied to a product showcase.
- FIG. 36A shows a display section 1001 functioning as a show window capable of displaying images.
- the display device of one embodiment of the present invention is applied to the display portion 1001 .
- Still images and moving images can be displayed on the display portion 1001 .
- a speaker that emits sound may be provided.
- FIG. 36A an image including characters "New Watch Debut! is displayed as an advertisement for a new product.
- the display portion 1001 can function as a touch sensor.
- the display unit 1001 By operating the display unit 1001 by the customer, detailed information on the product 1002 , a product lineup, related information, and the like can be displayed on the display unit 1001 .
- FIG. 36A by touching the portion displaying "Touch Here!, for example, an introductory video of the product can be displayed with sound.
- the customer can connect to the product purchase site by reading the two-dimensional code displayed on the display unit 1001, for example, using his or her own smartphone.
- the customer can purchase the product with a simple operation.
- the display portion 1001 is preferably made of hard-to-break glass such as tempered glass or bulletproof glass. Alternatively, a structure in which a display device is attached to the glass may be employed. Thereby, the theft of the product 1002 can be prevented.
- FIG. 36B is an example in which the display device of one embodiment of the present invention is applied to a water tank.
- FIG. 36B has a cylindrical display portion 1011 capable of displaying an image.
- the display device of one embodiment of the present invention is applied to the display portion 1011 .
- the depth of the display unit 1011 is a water tank, and the customers 1013a, 1013b, etc. can see the fish 1012 through the display unit 1011.
- the display unit 1011 can display, for example, information about the fish that the customer is watching.
- FIG. 36B shows an example of displaying information 1014a for a customer 1013a and information 1014b for a customer 1013b.
- the image can be displayed at an optimum position that matches the line of sight of the customer and the positional relationship of the fish in the back of the display unit 1011 .
- the display portion 1011 can function as a touch sensor.
- the image displayed on the display unit 1011 of the aquarium can be operated using application software for smartphones.
- Information displayed on the display portion 1011 can be operated by operating the display portion 1011 with a touch operation, a smartphone, or the like.
- FIG. 37 shows a configuration example of a vehicle provided with a display section 1021. As shown in FIG. The display device of one embodiment of the present invention is applied to the display portion 1021 .
- FIG. 37 shows an example in which the display unit 1021 is mounted on a right-hand drive vehicle, it is not particularly limited, and can be mounted on a left-hand drive vehicle. In this case, the left and right arrangements of the configuration shown in FIG. 37 are interchanged.
- FIG. 37 shows a dashboard 1022, a steering wheel 1023, a windshield 1024, etc. arranged at the driver's seat and passenger's seat.
- the dashboard 1022 is provided with an air outlet 1026 .
- a display unit 1021 is provided on the opposite side of the windshield 1024 from the driver's seat. The driver can see the scenery outside the window through the display unit 1021 while driving.
- Various information related to driving can be displayed on the display unit 1021 .
- map information, navigation information, weather, temperature, air pressure, and video from an in-vehicle camera can be used.
- various images unrelated to driving such as video content, can be displayed.
- a plurality of cameras 1025 for photographing the situation behind the vehicle may be provided outside the vehicle.
- FIG. 37 shows an example in which the camera 1025 is installed instead of the side mirror, both the side mirror and the camera may be installed.
- a CCD camera, a CMOS camera, or the like can be used as the camera 1025 .
- an infrared camera may be used in combination. Since the output level of the infrared camera increases as the temperature of the subject increases, it is possible to detect or extract a living body such as a person or an animal.
- An image captured by the camera 1025 can be output to the display portion 1021 .
- This display unit 1021 is mainly used to assist driving of the vehicle.
- the camera 1025 captures the rear side situation with a wide angle of view, and displays the image on the display unit 1021, so that the blind spot area of the driver can be visually recognized, and the occurrence of an accident can be prevented.
- the display unit 1021 has authentication means.
- the vehicle can perform biometric authentication such as fingerprint authentication or palm print authentication.
- biometric authentication such as fingerprint authentication or palm print authentication.
- the vehicle may have the ability to personalize the environment if the driver is authenticated by biometrics.
- seat position adjustment, steering wheel position adjustment, camera 1025 direction adjustment, brightness setting, air conditioner setting, wiper speed (frequency) setting, audio volume setting, and audio playlist reading etc. are preferably performed after authentication.
- the handle 1023 may have authentication means instead of the display unit 1021 .
- the vehicle when the driver is authenticated by biometric authentication, the vehicle can be put into a drivable state, for example, the engine is started, which is preferable because the conventionally required key becomes unnecessary.
- FIG. 38 is a diagram illustrating a configuration example of a vehicle to which the display device of one embodiment of the present invention is applied.
- FIG. 38 shows a dashboard 451 arranged around the driver's seat, a display device 454 fixed in front of the driver's seat, a camera 455, an air outlet 456, a door 458a, a door 458b, and the like.
- the display device 454 is provided in front of the driver's seat.
- FIG. 38 illustrates one display device as one display surface, and shows an example in which a display device 454 is configured by combining a total of 27 display devices of 3 rows and 9 columns.
- the boundaries of the pixel regions are indicated by dotted lines, but the dotted lines are not displayed in the actual display image, and the joints are seamless or inconspicuous.
- the display device 454 can perform see-through display.
- the display device 454 has an imaging function, and thus can function as a touch sensor. In addition, it is preferable that the display device 454 is capable of gesture operation using, for example, a separately provided camera.
- FIG. 38 shows an automatically driven vehicle without a steering wheel (also called a steering wheel), it is not particularly limited, and a steering wheel may be provided, and a display device having a curved surface may be provided on the steering wheel. .
- the display device the display device of one embodiment of the present invention can be applied.
- a plurality of cameras 455 for photographing the situation behind the vehicle may be provided outside the vehicle.
- FIG. 38 shows an example in which the camera 455 is installed instead of the side mirror, both the side mirror and the camera may be installed.
- a CCD camera, a CMOS camera, or the like can be used as the camera 455 .
- an infrared camera may be used in combination. Since the output level of the infrared camera increases as the temperature of the subject increases, it is possible to detect or extract a living body such as a person or an animal.
- An image captured by the camera 455 can be output to the display device 454 .
- This display device 454 is mainly used to assist driving of the vehicle.
- the camera 455 captures the rear side situation with a wide angle of view and displays the image on the display device 454, thereby enabling the driver to visually recognize the blind spot area and preventing the occurrence of an accident.
- a distance image sensor may be provided on the roof of the vehicle, and an image obtained by the distance image sensor may be displayed on the display device 454 .
- an image sensor an image sensor, a lidar (LIDAR: Light Detection And Ranging), or the like can be used.
- LIDAR Light Detection And Ranging
- the display device 452 having a curved surface can be provided inside the roof of the vehicle, that is, in the ceiling portion.
- the display device 452 the display device of one embodiment of the present invention can be applied.
- the display device 452 and the display device 454 may have a function of displaying map information, traffic information, television images, DVD images, or the like.
- the image displayed on the display device 454 can be freely set according to the driver's preference. For example, TV images, DVD images, web videos, etc. are displayed in the left image area, map information is displayed in the central image area, and measurements such as speedometers or tachometers are displayed in the right image area. can do.
- a display device 459a and a display device 459b are provided along the surface of the door 458a and the surface of the door 458b, respectively.
- Display device 459a and display device 459b can each be formed using one or more display devices. For example, a display device with 1 row and 3 columns can be used as one display surface.
- the display device 459a and the display device 459b are arranged to face each other.
- display device 454 has an imaging function.
- the display device 452, the display device 459a, and the display device 459b can also have an imaging function.
- the vehicle can perform biometric authentication such as fingerprint authentication or palm print authentication.
- biometric authentication such as fingerprint authentication or palm print authentication.
- the vehicle may have the ability to personalize the environment if the driver is authenticated by biometrics.
- seat position adjustment, steering wheel position adjustment, camera 455 orientation adjustment, brightness setting, air conditioner setting, wiper speed (frequency) setting, audio volume setting, and audio playlist reading etc. are preferably performed after authentication.
- the vehicle can be put into a drivable state, such as a state in which the engine is running, or a state in which an electric vehicle can be started, eliminating the need for a key that was required in the past. It is preferable because
- the display device surrounding the driver's seat has been described here, the display device can also be provided in the rear seats so as to surround the passengers.
- the degree of freedom in designing the display device can be increased, and the designability of the display device can be improved. Further, the display device of one embodiment of the present invention can be suitably used when mounted in a vehicle, for example.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
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Abstract
Description
図2は、表示装置の構成例を示す断面図である。
図3A及び図3Bは、表示装置の構成例を示す断面図である。
図4A及び図4Bは、表示装置の構成例を示す断面図である。
図5A、図5B1及び図5B2は、表示装置の構成例を示す断面図である。
図6A乃至図6Eは、表示装置の作製方法例を示す断面図である。
図7A乃至図7Cは、表示装置の作製方法例を示す断面図である。
図8A乃至図8Cは、表示装置の作製方法例を示す断面図である。
図9A乃至図9Dは、表示装置の作製方法例を示す断面図である。
図10A乃至図10Dは、表示装置の作製方法例を示す断面図である。
図11A及び図11Bは、表示装置の作製方法例を示す断面図である。
図12A乃至図12Dは、表示装置の作製方法例を示す断面図である。
図13A乃至図13Cは、表示装置の作製方法例を示す断面図である。
図14A及び図14Bは、表示装置の作製方法例を示す断面図である。
図15は、表示装置の構成例を示す斜視図である。
図16Aは、表示装置の構成例を示す断面図である。図16B1及び図16B2は、トランジスタの構成例を示す断面図である。
図17は、表示装置の構成例を示す断面図である。
図18は、表示装置の構成例を示す断面図である。
図19は、表示装置の構成例を示す断面図である。
図20A乃至図20Dは、表示装置の構成例を示す断面図である。
図21は、表示装置の構成例を示す斜視図である。
図22は、表示装置の構成例を示す断面図である。
図23は、表示装置の構成例を示す断面図である。
図24は、表示装置の構成例を示す断面図である。
図25は、表示装置の構成例を示す断面図である。
図26A及び図26Bは、表示パネルの構成例を示す上面図である。
図27A乃至図27Cは、表示パネルの構成例を示す上面図である。
図28A及び図28Bは、表示パネルの構成例を示す断面図である。
図29A、図29B、及び図29Dは、表示装置の例を示す断面図である。図29C、及び図29Eは、画像の例を示す図である。図29F乃至図29Hは、画素の例を示す上面図である。
図30Aは、表示装置の構成例を示す断面図である。図30B乃至図30Dは、画素の例を示す上面図である。
図31Aは、表示装置の構成例を示す断面図である。図31B乃至図31Iは、画素の一例を示す上面図である。
図32A及び図32Bは、表示装置の構成例を示す図である。
図33A乃至図33Gは、表示装置の構成例を示す図である。
図34A乃至図34Fは、画素の例を示す図である。図34G及び図34Hは、画素の回路図の例を示す図である。
図35A乃至図35Jは、表示装置の構成例を示す図である。
図36A及び図36Bは表示装置の適用例を示す図である。
図37は、表示装置の適用例を示す図である。
図38は、表示装置の適用例を示す図である。
本実施の形態では、本発明の一態様の表示装置の構成例、及び表示装置の作製方法例について説明する。
図1Aに、表示装置100の上面概略図を示す。表示装置100は、赤色を呈する発光素子130R、緑色を呈する発光素子130G、青色を呈する発光素子130B、及び受光素子150を、それぞれ複数有する。図1Aでは、各発光素子の区別を簡単にするため、各発光素子の発光領域内にR、G、又はBの符号を付している。また、図1Aでは、受光素子の受光領域内にSの符号を付している。
図1Bでは、導電層131が画素電極111Sと接する構成を示しているが、本発明の一態様はこれに限らない。図3Aは、図1Bに示す構成の変形例であり、基板101上に導電層131が設けられ、導電層131を覆うように絶縁層102が設けられる例を示している。図3Aに示す構成では、絶縁層102上に絶縁層103が設けられる。また、導電層131と重なる領域を有するように、画素電極111Sが設けられる。絶縁層102は、保護層121に用いることができる材料と同様の材料を用いることができる。なお、絶縁層102は平坦化されていることが好ましいが、平坦化されていなくてもよい。
図4Aは、図1Bに示す構成の変形例であり、導電層131が設けられない例を示している。図4Aに示す例では、画素電極111R、画素電極111G、画素電極111B、及び画素電極111Sは、可視光に対して反射性を有する導電層とすることができる。画素電極111R、画素電極111G、画素電極111B、及び画素電極111Sは、導電層131と同様の材料を有することができる。なお、図4Aに示す構成の表示装置100において、画素電極111R、画素電極111G、及び画素電極111Bを可視光に対して透光性を有する導電層とし、画素電極111Sを可視光に対して反射性を有する導電層としてもよい。つまり、画素電極111R、画素電極111G、及び画素電極111Bと、画素電極111Sと、を作り分けてもよい。
図5Aは、図1Bに示す構成の変形例であり、EL層112の端部、及びPD層155の端部が、画素電極111の端部より内側に位置する例を示している。図5Aは、具体的には、EL層112Rの端部が画素電極111Rの端部より内側に位置し、EL層112Gの端部が画素電極111Gの端部より内側に位置し、EL層112Bの端部が画素電極111Bの端部より内側に位置し、PD層155の端部が画素電極111Sの端部より内側に位置する例を示している。
以下では、本発明の一態様の表示装置の作製方法の一例について、図面を参照して説明する。ここでは、上記構成例で示した表示装置100を例に挙げて説明する。
図12A乃至図14Bは、図6A乃至図11Bで示した方法とは異なる表示装置100の作製方法例を示す断面概略図である。
本実施の形態では、本発明の一態様の表示装置について説明する。
本実施の形態では、本発明の一態様の表示パネルについて説明する。
図26Aは、本発明の一態様の表示パネルに含まれる表示パネル500の上面概略図である。表示パネル500の構成として、図22乃至図25に示す表示装置100の構成を適用することができる。なお、図26Aにおいて、Wは幅を示す。図26A以外の図面でも同様である。
図26Bでは一方向に複数の表示パネル500を重ねて配置する構成を示したが、縦方向及び横方向の二方向に複数の表示パネル500を重ねて配置してもよい。
本実施の形態では、本発明の一態様の表示装置について説明する。
図29Aに、表示パネル200の模式図を示す。表示パネル200は、基板207、基板202、受光素子212、発光素子216R、発光素子216G、発光素子216B、及び機能層203等を有する。
以下では、可視光を呈する発光素子と、赤外光を呈する発光素子と、受光素子と、を備える構成の例について説明する。
以下では、可視光を呈する発光素子と、可視光を呈し、且つ可視光を受光する受発光素子と、を備える構成の例について説明する。
本実施の形態では、本発明の一態様である受発光装置に用いることができる発光素子(発光デバイスともいう)、及び受光素子(受光デバイスともいう)について説明する。
次に、本発明の一態様の表示装置に用いることができる、発光素子、受光素子、及び受発光素子の詳細な構成について説明する。
本実施の形態では、例えば本発明の一態様の受光デバイスを有する表示装置の例について説明する。
本実施の形態では、高精細な表示装置について説明する。
VR向け、又はAR向け等の装着型の電子機器では、視差を用いることで3D画像を提供することができる。その場合、右目用の画像を右目の視界内に、左目用の画像を左目の視界内に、それぞれ表示する必要がある。ここで、表示装置の表示部の形状として、横長の矩形形状としてもよいが、右目及び左目の視界の外側に設けられる画素は、表示に寄与しないため、当該画素には常に黒色が表示されることとなる。
本実施の形態では、上記の実施の形態で説明したOSトランジスタに用いることができる金属酸化物について説明する。
酸化物半導体の結晶構造としては、アモルファス(completely amorphousを含む)、CAAC(c−axis−aligned crystalline)、nc(nanocrystalline)、CAC(cloud−aligned composite)、単結晶(single crystal)、及び多結晶(polycrystal)等が挙げられる。
なお、酸化物半導体は、構造に着目した場合、上記とは異なる分類となる場合がある。例えば、酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、上述のCAAC−OS、及びnc−OSがある。また、非単結晶酸化物半導体には、多結晶酸化物半導体、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)、及び非晶質酸化物半導体等が含まれる。
CAAC−OSは、複数の結晶領域を有し、当該複数の結晶領域はc軸が特定の方向に配向している酸化物半導体である。なお、特定の方向とは、CAAC−OS膜の厚さ方向、CAAC−OS膜の被形成面の法線方向、又はCAAC−OS膜の表面の法線方向である。また、結晶領域とは、原子配列に周期性を有する領域である。なお、原子配列を格子配列とみなすと、結晶領域とは、格子配列の揃った領域でもある。さらに、CAAC−OSは、a−b面方向において複数の結晶領域が連結する領域を有し、当該領域は歪みを有する場合がある。なお、歪みとは、複数の結晶領域が連結する領域において、格子配列の揃った領域と、別の格子配列の揃った領域と、の間で格子配列の向きが変化している箇所を指す。つまり、CAAC−OSは、c軸配向し、a−b面方向には明らかな配向をしていない酸化物半導体である。
nc−OSは、微小な領域(例えば、1nm以上10nm以下の領域、特に1nm以上3nm以下の領域)において原子配列に周期性を有する。別言すると、nc−OSは、微小な結晶を有する。なお、当該微小な結晶の大きさは、例えば、1nm以上10nm以下、特に1nm以上3nm以下であることから、当該微小な結晶をナノ結晶ともいう。また、nc−OSは、異なるナノ結晶間で結晶方位に規則性が見られない。そのため、膜全体で配向性が見られない。従って、nc−OSは、分析方法によっては、a−like OS、又は非晶質酸化物半導体と区別が付かない場合がある。例えば、nc−OS膜に対し、XRD装置を用いて構造解析を行うと、θ/2θスキャンを用いたOut−of−plane XRD測定では、結晶性を示すピークが検出されない。また、nc−OS膜に対し、ナノ結晶よりも大きいプローブ径(例えば50nm以上)の電子線を用いる電子線回折(制限視野電子線回折ともいう。)を行うと、ハローパターンのような回折パターンが観測される。一方、nc−OS膜に対し、ナノ結晶の大きさと近いかナノ結晶より小さいプローブ径(例えば1nm以上30nm以下)の電子線を用いる電子線回折(ナノビーム電子線回折ともいう。)を行うと、ダイレクトスポットを中心とするリング状の領域内に複数のスポットが観測される電子線回折パターンが取得される場合がある。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。a−like OSは、鬆又は低密度領域を有する。即ち、a−like OSは、nc−OS及びCAAC−OSと比べて、結晶性が低い。また、a−like OSは、nc−OS及びCAAC−OSと比べて、膜中の水素濃度が高い。
次に、上述のCAC−OSの詳細について、説明を行う。なお、CAC−OSは材料構成に関する。
CAC−OSとは、例えば、金属酸化物を構成する元素が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、1つ又は複数の金属元素が偏在し、該金属元素を有する領域が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで混合した状態をモザイク状、又はパッチ状ともいう。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では、本発明の一態様の表示装置を有する電子機器について説明する。
Claims (20)
- 可視光に対して透光性を有する基板上に、第1の発光素子と、前記第1の発光素子と隣接する第2の発光素子と、前記第2の発光素子と隣接する受光素子と、前記第2の発光素子と前記受光素子の間に設けられる第1の有機層と、前記第1の発光素子と前記第2の発光素子の間に設けられる第2の有機層と、を有し、
前記第1の発光素子は、第1の画素電極と、前記第1の画素電極上の第1の発光層と、前記第1の発光層上の共通電極と、を有し、
前記第2の発光素子は、第2の画素電極と、前記第2の画素電極上の第2の発光層と、前記第2の発光層上の前記共通電極と、を有し、
前記受光素子は、第3の画素電極と、前記第3の画素電極上の光電変換層と、前記光電変換層上の前記共通電極と、を有し、
前記第1の有機層上、及び前記第2の有機層上には、前記共通電極が設けられ、
前記共通電極は、可視光に対して透光性を有し、
前記第1の有機層における、可視光の波長のうち少なくとも一部の波長である特定波長の光の透過率が、前記第2の有機層における、前記特定波長の光の透過率より低い表示装置。 - 可視光に対して透光性を有する基板上に、第1の発光素子と、前記第1の発光素子と隣接する第2の発光素子と、前記第2の発光素子と隣接する受光素子と、前記第2の発光素子と前記受光素子の間に設けられる第1の有機層と、前記第1の発光素子と前記第2の発光素子の間に設けられる第2の有機層と、を有し、
前記第1の発光素子は、第1の画素電極と、前記第1の画素電極上の第1の発光層と、前記第1の発光層上の共通電極と、を有し、
前記第2の発光素子は、第2の画素電極と、前記第2の画素電極上の第2の発光層と、前記第2の発光層上の前記共通電極と、を有し、
前記受光素子は、第3の画素電極と、前記第3の画素電極上の光電変換層と、前記光電変換層上の前記共通電極と、を有し、
前記第1の有機層上、及び前記第2の有機層上には、前記共通電極が設けられ、
前記共通電極は、可視光に対して透光性を有し、
前記第1の有機層における、赤色、緑色、及び青色のうち少なくとも1色の光の透過率が、前記第2の有機層における前記透過率より低い表示装置。 - 請求項1又は2において、
前記第1及び第2の画素電極は、可視光に対して透光性を有する表示装置。 - 請求項1乃至3のいずれか一項において、
前記第1乃至第3の画素電極の端部は、テーパー形状を有し、
前記第1の発光層は、前記第1の画素電極の端部を覆い、
前記第2の発光層は、前記第2の画素電極の端部を覆い、
前記光電変換層は、前記第3の画素電極の端部を覆う表示装置。 - 請求項4において、
前記第1の発光層は、前記第1の画素電極の端部と、前記第2の有機層と、の間に第1のテーパー部を有し、
前記第2の発光層は、前記第2の画素電極の端部と、前記第2の有機層と、の間に第2のテーパー部を有し、
前記光電変換層は、前記第3の画素電極の端部と、前記第1の有機層と、の間に第3のテーパー部を有する表示装置。 - 請求項1乃至5のいずれか一項において、
前記第1の発光層上の第1のキャリア輸送層と、前記第2の発光層上の第2のキャリア輸送層と、前記光電変換層上の第3のキャリア輸送層と、を有する表示装置。 - 請求項6において、
前記第1のキャリア輸送層上、前記第2のキャリア輸送層上、前記第3のキャリア輸送層上、前記第1の有機層上、及び前記第2の有機層上の共通層と、前記共通層上の前記共通電極と、を有する表示装置。 - 請求項7において、
前記共通層は、キャリア注入層を有する表示装置。 - 請求項1乃至8のいずれか一に記載の表示装置と、
コネクタ及び集積回路のうち少なくとも一方と、を有する表示モジュール。 - 請求項9に記載の表示モジュールと、
バッテリ、カメラ、スピーカ、及びマイクのうち少なくとも1つと、を有する電子機器。 - 可視光に対して透光性を有する基板上に、第1の画素電極と、第2の画素電極と、第3の画素電極と、を形成し、
前記基板上、及び前記第1乃至第3の画素電極上に、第1の発光膜を形成し、
前記第1の発光膜上に、第1の犠牲膜を形成し、
前記第1の発光膜、及び前記第1の犠牲膜を加工することにより、第1の発光層と、前記第1の発光層上の第1の犠牲層と、を形成し、
前記基板上、前記第2の画素電極上、前記第3の画素電極上、及び前記第1の犠牲層上に、第2の発光膜を形成し、
前記第2の発光膜上に、第2の犠牲膜を形成し、
前記第2の発光膜、及び前記第2の犠牲膜を加工することにより、前記第1の発光層と隣接する第2の発光層と、前記第2の発光層上の第2の犠牲層と、を形成し、
前記基板上、前記第3の画素電極上、前記第1の犠牲層上、及び前記第2の犠牲層上に、光電変換膜を形成し、
前記光電変換膜上に、第3の犠牲膜を形成し、
前記光電変換膜、及び前記第3の犠牲膜を加工することにより、前記第2の発光層と隣接する光電変換層と、前記光電変換層上の第3の犠牲層と、を形成し、
前記第2の発光層と、前記光電変換層と、の間に、第1の有機層を形成し、
前記第1の発光層と、前記第2の発光層と、の間に、可視光の波長のうち少なくとも一部の波長である特定波長の光の透過率が、前記第1の有機層における前記特定波長の光の透過率より高い第2の有機層を形成し、
前記第1乃至第3の犠牲層の少なくとも一部を除去し、
前記第1の発光層上、前記第2の発光層上、前記光電変換層上、前記第1の有機層上、及び前記第2の有機層上に、可視光に対して透光性を有する共通電極を形成する表示装置の作製方法。 - 可視光に対して透光性を有する基板上に、第1の画素電極と、第2の画素電極と、第3の画素電極と、を形成し、
前記基板上、及び前記第1乃至第3の画素電極上に、第1の発光膜を形成し、
前記第1の発光膜上に、第1の犠牲膜を形成し、
前記第1の発光膜、及び前記第1の犠牲膜を加工することにより、第1の発光層と、前記第1の発光層上の第1の犠牲層と、を形成し、
前記基板上、前記第2の画素電極上、前記第3の画素電極上、及び前記第1の犠牲層上に、第2の発光膜を形成し、
前記第2の発光膜上に、第2の犠牲膜を形成し、
前記第2の発光膜、及び前記第2の犠牲膜を加工することにより、前記第1の発光層と隣接する第2の発光層と、前記第2の発光層上の第2の犠牲層と、を形成し、
前記基板上、前記第3の画素電極上、前記第1の犠牲層上、及び前記第2の犠牲層上に、光電変換膜を形成し、
前記光電変換膜上に、第3の犠牲膜を形成し、
前記光電変換膜、及び前記第3の犠牲膜を加工することにより、前記第2の発光層と隣接する光電変換層と、前記光電変換層上の第3の犠牲層と、を形成し、
前記第2の発光層と、前記光電変換層と、の間に、第1の有機層を形成し、
前記第1の発光層と、前記第2の発光層と、の間に、赤色、緑色、及び青色のうち少なくとも1色の光の透過率が、前記第1の有機層における前記透過率より高い第2の有機層を形成し、
前記第1乃至第3の犠牲層の少なくとも一部を除去し、
前記第1の発光層上、前記第2の発光層上、前記光電変換層上、前記第1の有機層上、及び前記第2の有機層上に、可視光に対して透光性を有する共通電極を形成する表示装置の作製方法。 - 請求項11又は12において、
前記第1及び第2の画素電極は、可視光に対して透光性を有する表示装置の作製方法。 - 請求項11乃至13のいずれか一項において、
前記第2の有機層の形成前に、前記第1乃至第3の犠牲層上、及び前記第1の有機層上に保護膜を形成し、
前記保護膜上に、有機膜を形成し、
前記有機膜を加工することにより、前記第2の有機層を形成する表示装置の作製方法。 - 請求項14において、
前記保護膜を加工することにより、前記第2の有機層下の保護層を形成する表示装置の作製方法。 - 請求項11乃至15のいずれか一項において、
前記第1乃至第3の犠牲層の少なくとも一部を除去した後、前記第1の発光層上、前記第2の発光層上、前記光電変換層上、前記第1の有機層上、及び前記第2の有機層上に共通層を形成し、
前記共通層上に、前記共通電極を形成する表示装置の作製方法。 - 請求項16において、
前記共通層は、キャリア注入層を有する表示装置の作製方法。 - 請求項11乃至17のいずれか一項において、
前記第1の発光膜の形成後、且つ前記第1の犠牲膜の形成後において、前記第1の発光膜上に、第1のキャリア輸送層として機能する膜を形成し、
前記第1の発光膜、前記第1のキャリア輸送層として機能する膜、及び前記第1の犠牲膜を加工することにより、前記第1の発光層と、前記第1の発光層上の第1のキャリア輸送層と、前記第1のキャリア輸送層上の前記第1の犠牲層と、を形成し、
前記第2の発光膜の形成後、且つ前記第2の犠牲膜の形成後において、前記第2の発光膜上に、第2のキャリア輸送層として機能する膜を形成し、
前記第2の発光膜、前記第2のキャリア輸送層として機能する膜、及び前記第2の犠牲膜を加工することにより、前記第2の発光層と、前記第2の発光層上の第2のキャリア輸送層と、前記第2のキャリア輸送層上の前記第2の犠牲層と、を形成し、
前記光電変換膜の形成後、且つ前記第3の犠牲膜の形成後において、前記光電変換膜上に、第3のキャリア輸送層として機能する膜を形成し、
前記光電変換膜、前記第3のキャリア輸送層として機能する膜、及び前記第3の犠牲膜を加工することにより、前記光電変換層と、前記光電変換層上の第3のキャリア輸送層と、前記第3のキャリア輸送層上の前記第3の犠牲層と、を形成する表示装置の作製方法。 - 請求項11乃至18のいずれか一項において、
前記第1乃至第3の画素電極を、端部にテーパーを有するように形成し、
前記第1の発光膜の加工により、前記第1の画素電極の端部を覆うように前記第1の発光層を形成し、
前記第2の発光膜の加工により、前記第2の画素電極の端部を覆うように前記第2の発光層を形成し、
前記光電変換膜の加工により、前記第3の画素電極の端部を覆うように前記光電変換層を形成する表示装置の作製方法。 - 請求項19において、
前記第1の発光膜の加工により、前記第1の画素電極の端部と、前記第1の犠牲層の端部と、の間に第1のテーパー部を有するように、前記第1の発光層を形成し、
前記第2の発光膜の加工により、前記第2の画素電極の端部と、前記第2の犠牲層の端部と、の間に第2のテーパー部を有するように、前記第2の発光層を形成し、
前記光電変換膜の加工により、前記第3の画素電極の端部と、前記第3の犠牲層の端部と、の間に第3のテーパー部を有するように、前記光電変換層を形成する表示装置の作製方法。
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JP2018521459A (ja) * | 2015-06-29 | 2018-08-02 | アイメック・ヴェーゼットウェーImec Vzw | 有機層の高分解能パターニングのための方法 |
JP2021057039A (ja) * | 2019-09-27 | 2021-04-08 | 株式会社半導体エネルギー研究所 | 表示装置、認証方法、及びプログラム |
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JP2013073965A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | 光電変換装置及びその製造方法 |
JP2018521459A (ja) * | 2015-06-29 | 2018-08-02 | アイメック・ヴェーゼットウェーImec Vzw | 有機層の高分解能パターニングのための方法 |
JP2021057039A (ja) * | 2019-09-27 | 2021-04-08 | 株式会社半導体エネルギー研究所 | 表示装置、認証方法、及びプログラム |
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