WO2022268216A1 - 像素结构、图像传感器、控制方法及装置、电子设备 - Google Patents

像素结构、图像传感器、控制方法及装置、电子设备 Download PDF

Info

Publication number
WO2022268216A1
WO2022268216A1 PCT/CN2022/101307 CN2022101307W WO2022268216A1 WO 2022268216 A1 WO2022268216 A1 WO 2022268216A1 CN 2022101307 W CN2022101307 W CN 2022101307W WO 2022268216 A1 WO2022268216 A1 WO 2022268216A1
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
pixel structure
camera module
capacitors
source follower
Prior art date
Application number
PCT/CN2022/101307
Other languages
English (en)
French (fr)
Inventor
李沛德
林稔杰
Original Assignee
维沃移动通信有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 维沃移动通信有限公司 filed Critical 维沃移动通信有限公司
Publication of WO2022268216A1 publication Critical patent/WO2022268216A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • the present application belongs to the technical field of image processing, and specifically relates to a pixel structure, an image sensor, a control method and device, and electronic equipment.
  • the image sensor is one of the most important components of the image acquisition equipment.
  • CMOS complementary Metal Oxide Semiconductor
  • a CMOS image sensor is provided with a pixel array.
  • the function of the pixel array is to collect light signals and convert them into electrical signals.
  • the pixel array has an important impact on the performance of the image sensor.
  • Pixel structures in the related art are mainly classified into passive pixel structures and active pixel structures. Among them, the active pixel structure is relatively widely used at present. In the active pixel structure, the active pixel structure with a clamped photodiode (Pinned Photodiode, PPD) is the most widely used.
  • PPD clamped photodiode
  • the purpose of the embodiments of the present application is to provide a pixel structure, an image sensor, a control method and device, and an electronic device, which can solve the problem that the sensitivity of the PPD pixel structure is not ideal when converting photoelectric signals.
  • the embodiment of the present application provides a pixel structure, and the pixel structure includes:
  • a photodiode one end of the photodiode is grounded and the other end is connected to the source of the transmission switch; the transmission switch, the drain of the transmission switch is respectively connected to the source of the reset transistor and the gate of the source follower;
  • a reset transistor the drain of the reset transistor is connected to the power supply voltage;
  • a source follower the drain of the source follower is connected to the power supply voltage, and the source of the source follower is connected to the drain of the selection transistor;
  • a selection tube, the source of the selection tube is connected to the output signal line;
  • the floating diffusion node is connected to the gate of the source follower and includes at least two capacitors and at least one capacitor control switch disposed between the at least two capacitors.
  • an embodiment of the present application provides an image sensor, where the image sensor includes the pixel structure in the first aspect.
  • an embodiment of the present application provides an electronic device, and the electronic device includes the image sensor in the second aspect.
  • the embodiment of the present application provides a method for controlling the pixel structure, which is used to control the pixel structure in the first aspect, and the method includes:
  • the target level corresponds to the capacity of the capacitance connected to the source follower among the at least two capacitors.
  • the embodiment of the present application provides a pixel structure control device for controlling the pixel structure in the first aspect, the device includes:
  • a reset module configured to reset the floating diffusion node through a reset transistor
  • the transmission module is used to transmit the electrical signal from the photodiode to the floating diffusion node through the transmission switch tube;
  • the readout module is used to control the on-off of at least one capacitor control switch, so that the source follower can read out the electrical signal at the target level;
  • an output module configured to output the electrical signal through the selection tube
  • the target level corresponds to the capacity of the capacitance connected to the source follower among the at least two capacitors.
  • the embodiment of the present application provides an image acquisition method, which is applied to an image acquisition device.
  • the image acquisition device includes a first camera module and a second camera module, and the first camera module includes the image acquisition method described in the first aspect.
  • the pixel structure of ; the method includes:
  • the second camera module performs image acquisition on the target object
  • the second camera module is controlled to focus according to the focus information.
  • the embodiment of the present application provides an image acquisition device, which is applied to an image acquisition device.
  • the image acquisition device includes a first camera module and a second camera module, and the first camera module includes the camera module described in the first aspect.
  • pixel structure; the device includes:
  • An acquisition module configured to acquire focusing information for the target object through the first camera module
  • the focus module is configured to control the second camera module to focus according to the focus information acquired by the acquisition module when the second camera module is collecting images of the target object.
  • the embodiment of the present application provides an electronic device, the electronic device includes a processor, a memory, and a program or instruction stored in the memory and operable on the processor, and the program or instruction is executed by The processor realizes the steps of the method according to the fourth aspect or the sixth aspect when executed.
  • the embodiment of the present application provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the implementation as described in the fourth or sixth aspect steps of the method.
  • the embodiment of the present application provides a chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is used to run programs or instructions, to achieve the fourth aspect Or the method described in the sixth aspect.
  • the pixel structure includes a photodiode, a reset transistor, a selection transistor, a floating diffusion node, a selection transistor, and a floating diffusion node.
  • one end of the photodiode is grounded and the other end is connected to the source of the transmission switch tube.
  • the drain of the transmission switch tube is respectively connected with the source of the reset transistor and the gate of the source follower.
  • the drain of the reset transistor is connected to a power supply voltage.
  • the drain of the source follower is connected to the power supply voltage, and the source of the source follower is connected to the drain of the selection transistor.
  • the source of the selection tube is connected to the output signal line.
  • the floating diffusion node includes at least two capacitors and at least one capacitor-controlled switch disposed between the at least two capacitors. Since the floating diffusion node includes at least two capacitors, and there is at least one capacitor control switch between the at least two capacitors, it is possible to control the on-off of some or all of the at least two capacitors by controlling at least one capacitor control switch , so that the floating diffusion nodes have different capacities. Thus, the optical signal received by the photodiode and converted into an electrical signal can be read out by the source follower with different magnitudes. Therefore, the sensitivity of the PPD pixel structure during photoelectric signal conversion can be improved.
  • FIG. 1 is a schematic circuit diagram of a pixel structure in an embodiment of the present application
  • Fig. 2 is a working principle diagram of the pixel structure of the embodiment of the present application.
  • Fig. 3 is one of the schematic diagrams of the position of the always-on pixel in the pixel structure of the embodiment of the present application;
  • Fig. 4 is the second schematic diagram of the position of the always-on pixel in the pixel structure of the embodiment of the present application.
  • Fig. 5 is one of the schematic diagrams of the cooperation relationship between the always-on pixel and the microprism in the pixel structure of the embodiment of the present application;
  • Fig. 6 is the second schematic diagram of the cooperation relationship between the always-on pixel and the microprism in the pixel structure of the embodiment of the present application;
  • FIG. 7 is a flowchart of steps of a method for controlling a pixel structure according to an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a control device for a pixel structure according to an embodiment of the present application.
  • FIG. 9 is a flow chart of the steps of the image acquisition method of the pixel structure according to the embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of an image acquisition device with a pixel structure according to an embodiment of the present application.
  • FIG. 11 is one of the structural schematic diagrams of the electronic device of the embodiment of the present application.
  • FIG. 12 is a second schematic structural diagram of an electronic device according to an embodiment of the present application.
  • the execution subject of the image processing method provided in the embodiment of the present application may be an image processing device, and the device may be an electronic device, or a functional module and/or a functional subject in the electronic device, which may be determined according to actual use requirements.
  • This application Examples are not limited.
  • an image processing apparatus is used as an example to illustrate the implementation of the image processing method.
  • the embodiment of the present application provides a pixel structure 100 .
  • the pixel structure 100 provided in the embodiment of the present application can be applied to a CMOS camera module.
  • the CMOS camera module mainly consists of a lens (Lens), a voice coil motor (Voice Coil Motor, VCM), an infrared filter (IR Filter), a CMOS image sensor, a digital signal processor (Digital Signal Process, DSP), and a soft board (Flexible Printed Circuit, FPC) composition.
  • the surface of the CMOS image sensor has hundreds of thousands to millions of photodiodes, and each photodiode is covered with a micro-lens (Micro-lens) and a color filter array (Color Filter Rarray).
  • the micro-lens is used to guide the light into the photodiode, and the color filter array filters the light, which only allows the light of the wavelength band corresponding to the color of the color filter array to pass through.
  • the basic working process of the CMOS camera module is as follows: the voice coil motor drives the lens to the position where the focus is accurate, the external light passes through the lens, is filtered by the infrared filter, and shines on the photosensitive diode (Pixel), and the photosensitive diode will perceive The optical signal is converted into an electrical signal, and the digital signal matrix (ie image) is formed through the amplification circuit and the AD conversion circuit, and then processed by the digital signal processor, compressed and stored.
  • the pixel structure 100 provided in the embodiment of the present application may be a PPD pixel structure, which specifically includes a photodiode (Photo diode, PD) 200, a transfer switch tube (Transfer Transistor, TX) 300, a reset transistor (Reset Transistor, RST) 400, a source A follower (Source Follower, SF) 500 , a selection tube (Select Transistor, SET) 600 , and a floating diffusion node (Floating Diffusion, FD) 700 .
  • a photodiode Photo diode, PD
  • TX Transfer Transistor
  • RST reset transistor
  • Source A follower Source A follower
  • Selection Tube Select Transistor, SET
  • Floating Diffusion, FD floating diffusion node
  • the photodiode 200 of the pixel structure 100 is grounded and the other end is connected to the source of the transmission switch 300 .
  • the photodiode 200 is used for receiving light signals from the external environment and entering the image sensor through the lens and the infrared filter.
  • the photodiode 200 is a semiconductor mainly made of silicon and germanium, on which there are N-level (negatively charged) and P (positively charged)-level semiconductors, and the current generated by their complementary effects can be processed by the chip recording and interpretation. Thus, when the photodiode 200 is illuminated, charges are generated, and the light is converted into electrical signals.
  • the drain of the transmission switch transistor 300 of the pixel structure 100 is respectively connected to the source of the reset transistor 400 and the gate of the source follower 500 .
  • the transmission switch 300 is used to transmit the electrical signal from the photodiode 200 to the source follower 500 .
  • the drain of the source follower 500 is connected to the power supply voltage 800 , and the source of the source follower 500 is connected to the drain of the selection transistor 600 .
  • the source of the selection transistor 600 is connected to the output signal line 900 .
  • the source follower 500 can read out the electrical signal transmitted through the transmission switch 300 .
  • the floating diffusion node 700 is connected to the gate of the source follower 500 .
  • the floating diffusion node 700 has parasitic capacitance and can store pixel signals.
  • the capacity of the parasitic capacitance in the floating diffusion node 700 affects the readout magnitude when the source follower 500 reads out the electrical signal.
  • the drain of the reset transistor 400 is connected to the supply voltage 800 .
  • the reset transistor 400 can control the floating diffusion node 700 to reset.
  • the floating diffusion node 700 includes at least two capacitors 710 and at least one capacitor control switch 720 disposed between the at least two capacitors 710 .
  • the number of at least two capacitors 710 may be specifically two, three or more than three.
  • the quantity of at least one capacitor control switch 720 may be specifically two or more.
  • the working mode of the above-mentioned pixel structure 100 is as follows:
  • Exposure The electron-hole pairs generated by light irradiation will be separated due to the existence of the PPD electric field, the electrons will move to the n region, and the holes will move to the p region;
  • RST At the end of exposure, RST can be activated to reset the readout area (n+ area) to high level;
  • Reset level readout After the reset is completed, read out the reset level, which includes the offset noise of the MOS transistor, 1/f noise and kTC noise introduced by the reset, and store the readout signal in the first capacitor;
  • Charge transfer Activate TX to completely transfer the charge from the photosensitive area to the n+ area for readout.
  • the mechanism here can be understood as similar to the charge transfer in CCD;
  • Signal level readout read out the voltage signal of the n+ region to the second capacitor.
  • the signal here includes the signal generated by photoelectric conversion, the offset generated by the operational amplifier, 1/f noise and kTC noise introduced by reset;
  • Signal output Subtract the signals stored in the two capacitors (such as using CDS, the main noise in the Pixel can be eliminated), the obtained signal is amplified by analog, and then sampled by ADC, then the digital signal can be output .
  • the floating diffusion node 700 includes at least two capacitors 710, and at least one capacitor control switch 720 is arranged between the at least two capacitors 710, it is possible to control at least one capacitor control switch 720 to control part of the at least two capacitors 710. Or all capacitors are turned on and off, so that the floating diffusion node 700 has different capacities.
  • the optical signal received by the photodiode 200 and converted into an electrical signal can be read out by the source follower 500 with different magnitudes. Therefore, the sensitivity of the pixel structure 100 during photoelectric signal conversion can be improved.
  • the dynamic variable range of the floating diffusion node 700 can also be widened.
  • At least one capacitor control switch in at least one capacitor control switch 720 is disposed between any two adjacent capacitors among the at least two capacitors 710 .
  • a capacitor control switch is provided between two adjacent capacitors.
  • At least two capacitors 710 are arranged in parallel, and one end of each of the at least two capacitors 710 is grounded and the other end is connected to the drain of the transmission switch 300, the source of the reset transistor 400, and the gate of the source follower 500. pole connection.
  • the on and off of each capacitor can be independently controlled by the capacitor control switch.
  • the capacity of each of the at least two capacitors 710 is different from each other.
  • the dynamic variable range of the floating diffusion node 700 can be further widened, and the sensitivity of the pixel structure 100 when performing photoelectric signal conversion can be improved.
  • At least two capacitors 710 may include a first capacitor 712 , a second capacitor 714 and a third capacitor 716 that are connected in parallel and are respectively grounded.
  • the at least one capacitor control switch 720 includes a first capacitor control switch 722 and a second capacitor control switch 724 .
  • the first capacitor control switch 722 is disposed between the first capacitor 712 and the second capacitor 714 .
  • the second capacitor control switch 724 is disposed between the first capacitor 712 and the third capacitor 716 . Ends of the first capacitor 712 , the second capacitor 714 and the third capacitor 716 away from the source follower 500 are respectively grounded.
  • the first capacitor controls the switch 722 and When the second capacitor control switches 724 are all turned off, only the first capacitor 712 is connected between the transmission switch tube 300 and the source follower 500, and the total capacitance of the floating diffusion node 700 is 1; the first capacitor control switch 722 is turned on and the second When the second capacitor control switch 724 is turned off, the first capacitor 712 and the second capacitor 714 are connected between the transmission switch tube 300 and the source follower 500, and the total capacitance of the floating diffusion node 700 is 4; the first capacitor control switch 722 and the second capacitor When the two capacitor control switches 724 are turned on, the first capacitor 712 , the second capacitor 714 and the third capacitor 716 are connected between the transmission switch 300 and the source follower 500 , and the total capacitance of the floating diffusion node 700 is 8. Therefore, compared with the wide floating
  • the photodiode 200 includes a plurality of regular pixels 210 and a plurality of always-on pixels 220 .
  • the pixel array of the photodiode 200 includes conventional pixels 201 and always-on pixel points 202 or 203 (that is, the pixels in the black square area in FIGS. 3 and 4 , hereinafter referred to as AO pixel).
  • AO pixels include AO pixels with color information (that is, the pixel area composed of B, Gb, Gr, and R in Figure 3 and Figure 4) and pure brightness information AO pixels (that is, the four W constitutes the pixel area).
  • color information that is, the pixel area composed of B, Gb, Gr, and R in Figure 3 and Figure 4
  • pure brightness information AO pixels that is, the four W constitutes the pixel area.
  • the pure luminance information AO pixel can not only obtain luminance information, but also have a phase detection auto focus (Phase Detection Auto Focus) function. Therefore, no matter whether the image acquisition device is turned on or not, the AO pixels will continue to output at a lower frame rate (about 10fps) to realize the corresponding function.
  • the pixel array of the photodiode 200 may be a 4-in-1 pixel array, or a 9-in-1 pixel array, or a 16-in-1 pixel array.
  • a microprism can be buckled on four pixels, that is, a design in the form of Quarter Phase Detection (QPD).
  • QPD Quarter Phase Detection
  • a microprism can also be buckled on two pixels, that is, a design in the form of double phase detection (Double Phase Detection, DPD).
  • pixels with an always-on (AO) function can enable the chip to output image data at low resolution, low frame rate, and for a long time.
  • the image acquisition device can do some AI-related applications, such as smart payment, presence perception, face detection, gesture recognition, smart bright screen, QR code scanning, etc.
  • the AO function supports the perception of the existing environment at any time, making the image acquisition equipment evolve from passive intelligence to active intelligence, and can autonomously perceive the environment and actively interact with users.
  • An embodiment of the present application further provides an image sensor, and the image sensor includes the pixel structure of any one of the above embodiments.
  • An embodiment of the present application further provides an electronic device, and the electronic device includes the image sensor in any one of the foregoing embodiments.
  • the electronic device includes a lens, a voice coil motor, an infrared filter, an image sensor, a digital signal processor, and a flexible board.
  • the lens is used to focus and focus, and the lens is wrapped and fixed by the voice coil motor.
  • the upper and lower ends of the voice coil motor are connected with the shrapnel.
  • the motor can generate electromagnetic force by energizing, and the magnetic force is finally balanced with the elastic force of the shrapnel.
  • the position of the motor can be controlled by the magnitude of the energization, and then the purpose of pushing the motor and the lens to the focus position can be achieved.
  • the infrared filter can filter out unnecessary light projected to the image sensor, prevent the image sensor from producing false colors or ripples, and improve its effective resolution and color reductive.
  • the light after passing through the image sensor can be sensed by the image sensor.
  • the image sensor converts the light signal into an electrical signal after sensing light, and after dark current correction is completed, it is amplified and converted into a digital signal by the ADC, forming a raw image and outputting it to the image processing system.
  • an embodiment of the present application further provides a method for controlling a pixel structure, which is used for controlling the pixel structure in any of the above embodiments.
  • the method is applied to an image acquisition device, and the image acquisition device may be a device for realizing image acquisition, or may be an electronic device configured with a module or a component for image acquisition.
  • the image acquisition device applicable to the image processing method provided by the embodiment of the present application may be a SLR camera or a single-chip microcomputer, or may be a smart phone, a personal computer or a wearable smart device.
  • the above method includes the following S101 to S104:
  • the device for controlling the pixel structure resets the floating diffusion node through a reset transistor.
  • the reset transistor can be activated through S101 to reset the readout region (n+ region) to a high level.
  • control device of the pixel structure transmits the electrical signal from the photodiode to the floating diffusion node through the transmission switch tube.
  • the transmission switch needs to be turned on to transmit the electrical signal from the photodiode to the floating diffusion node.
  • the pixel structure control device controls at least one capacitor control switch to be turned on and off, so that the source follower reads out an electrical signal at a target level.
  • the total capacitance of the floating diffusion node capacitance can be changed, so that the electrical signal from the photodiode can be read out with different magnitudes.
  • control device of the pixel structure outputs the electrical signal through the selection tube.
  • the electrical signal By outputting the electrical signal, the electrical signal can be stored after the optical signal entering the photodiode is converted into an electrical signal, so as to complete image acquisition and storage.
  • the target level corresponds to the capacity of the capacitance connected to the source follower among the at least two capacitors.
  • the above-mentioned target level can be changed by adjusting the capacity of the capacitor.
  • the capacity of the capacitor connected between the source follower and the transmission switch affects the target magnitude of the source follower when reading out electrical signals.
  • control method of the above-mentioned pixel structure can make the optical signal received by the photodiode and converted into an electrical signal be read out by the source follower with different magnitudes. Therefore, the sensitivity of the pixel structure during photoelectric signal conversion can be improved. In addition, the dynamic variable range of the floating diffusion node can also be widened.
  • the image processing method provided in the embodiment of the present application may be executed by an image processing device, or a control module in the image processing device for executing the image processing method.
  • the image processing device executed by the image processing device is taken as an example to describe the image processing device provided in the embodiment of the present application.
  • the embodiment of the present application provides a pixel structure control device 800 for controlling the pixel structure in any of the above embodiments.
  • the control device 800 includes:
  • the reset module 810 is configured to control the reset transistor to reset the floating diffusion node.
  • the transmission module 820 is configured to control the transmission switch to transmit the electrical signal from the photodiode to the floating diffusion node.
  • the readout module 830 is configured to control the on-off of at least one capacitor control switch, so that the source follower reads out an electrical signal at a target level.
  • the output module 840 is used to control the selection tube to output the electrical signal.
  • the target level corresponds to the capacity of the capacitance connected to the source follower among the at least two capacitors.
  • control device 800 of the above-mentioned pixel structure can make the optical signal received by the photodiode and converted into an electrical signal be read out by the source follower with different magnitudes. Therefore, the sensitivity of the pixel structure during photoelectric signal conversion can be improved. In addition, the dynamic variable range of the floating diffusion node can also be widened.
  • the control device in the embodiment of the present application may be a device, or may be a component, an integrated circuit, or a chip in a terminal.
  • the device may be a mobile electronic device or a non-mobile electronic device.
  • the mobile electronic device may be a mobile phone, tablet computer, notebook computer, palmtop computer, vehicle electronic device, wearable device, ultra-mobile personal computer (ultra-mobile personal computer, UMPC), netbook or personal digital assistant (personal digital assistant).
  • assistant, PDA personal digital assistant
  • non-mobile electronic devices can be servers, network attached storage (Network Attached Storage, NAS), personal computer (personal computer, PC), television (television, TV), teller machine or self-service machine, etc., this application Examples are not specifically limited.
  • control device provided in the embodiment of the present application can realize various processes realized by the method embodiment in FIG. 7 , and details are not repeated here to avoid repetition.
  • the embodiment of the present application also provides an image acquisition method, which is applied to an image acquisition device.
  • the image acquisition device may be a device for realizing image acquisition, or may be an electronic device configured with a module or component for image acquisition.
  • the image acquisition device applicable to the image processing method provided by the embodiment of the present application may be a SLR camera or a single-chip microcomputer, or may be a smart phone, a personal computer or a wearable smart device.
  • the image acquisition device includes a first camera module and a second camera module, and the first camera module includes the pixel structure according to any one of the above embodiments.
  • the above method includes the following S201 to S202:
  • the image acquisition device acquires focusing information on a target object through a first camera module.
  • the target object is an image acquisition object of the first camera module.
  • the target object may be a person or a still life or a scene.
  • the image acquisition device controls the second camera module to focus according to the focus information when the second camera module is performing image capture on the target object.
  • the second camera module collects images for all or part of the target object.
  • the image acquisition device applicable to the image acquisition method is an image acquisition device including a first camera module and a second camera module.
  • the focus information of the target object can be acquired through the first camera module.
  • the second camera module collects images of the target object
  • the first camera module has already obtained the focusing information of the target object.
  • the second camera module can directly focus according to the focus information. Therefore, for the image acquisition device including the first camera module and the second camera module, the time required for focusing can be effectively reduced and the focusing efficiency can be improved.
  • the focus information for the target object can be obtained through the first camera module, the focus information can also be used in combination with the always-on function provided by the pixel structure provided by the embodiment of the present application to assist the electronic device in judging motion information, so as to This enables electronic devices to better realize functions such as smart bright screen and smart payment.
  • the embodiment of the present application provides an image acquisition device 10, which is applied to image acquisition equipment, and the image acquisition equipment includes a first camera module and a second camera module, and the first camera module includes the above-mentioned
  • the image acquisition device 10 includes:
  • An acquisition module 11 configured to acquire focusing information for a target object through the first camera module
  • the focus module 12 is configured to control the second camera module to focus according to the focus information acquired by the acquisition module 11 when the second camera module performs image acquisition on a target object.
  • the image capture device suitable for the image capture device 10 is an image capture device including a first camera module and a second camera module.
  • the focus information of the target object can be acquired through the first camera module.
  • the second camera module collects images of the target object
  • the first camera module has already obtained the focusing information of the target object.
  • the second camera module can directly focus according to the focus information. Therefore, for an image capture device including the first camera module and the second camera module, the image capture device 10 can effectively reduce the time required for focusing and improve focus efficiency.
  • the embodiment of the present application further provides an electronic device 90, including a processor 91, a memory 92, and programs or instructions stored in the memory 92 and operable on the processor 91,
  • an electronic device 90 including a processor 91, a memory 92, and programs or instructions stored in the memory 92 and operable on the processor 91,
  • the program or instruction is executed by the processor 91, each process of the above-mentioned image processing method embodiment can be realized, and the same technical effect can be achieved, so in order to avoid repetition, details are not repeated here.
  • the electronic devices in the embodiments of the present application include the above-mentioned mobile electronic devices and non-mobile electronic devices.
  • FIG. 12 is a schematic diagram of a hardware structure of an electronic device 90 implementing an embodiment of the present application.
  • the electronic device 90 includes, but is not limited to: a radio frequency unit 91, a network module 92, an audio output unit 93, an input unit 94, a sensor 95, a display unit 96, a user input unit 97, an interface unit 98, a memory 99, and a processor 910, etc. part.
  • the electronic device 90 can also include a power supply (such as a battery) for supplying power to each component, and the power supply can be logically connected to the processor 91 through the power management system, so that the management of charging, discharging, and function can be realized through the power management system. Consumption management and other functions.
  • a power supply such as a battery
  • the structure of the electronic device shown in FIG. 12 does not constitute a limitation to the electronic device.
  • the electronic device may include more or fewer components than shown in the figure, or combine some components, or arrange different components, and details will not be repeated here. .
  • the input unit 94 may include a graphics processor (Graphics Processing Unit, GPU) 941 and a microphone 942. Such as the image data of the still picture or video obtained by the camera) for processing.
  • the display unit 96 may include a display panel 961, and the display panel 961 may be configured in the form of a liquid crystal display, an organic light emitting diode, or the like.
  • the user input unit 97 includes a touch panel 971 and other input devices 972 .
  • the touch panel 971 is also called a touch screen.
  • the touch panel 971 may include two parts, a touch detection device and a touch controller.
  • Other input devices 972 may include, but are not limited to, physical keyboards, function keys (such as volume control buttons, switch buttons, etc.), trackballs, mice, and joysticks, which will not be repeated here.
  • Memory 99 may be used to store software programs as well as various data, including but not limited to application programs and operating systems.
  • the processor 910 may integrate an application processor and a modem processor, wherein the application processor mainly processes an operating system, user interface, application program, etc., and the modem processor mainly processes wireless communication. It can be understood that the foregoing modem processor may not be integrated into the processor 910 .
  • the embodiment of the present application also provides a readable storage medium, the readable storage medium stores a program or an instruction, and when the program or instruction is executed by a processor, each process of the above-mentioned image processing method embodiment is realized, and can achieve the same To avoid repetition, the technical effects will not be repeated here.
  • the processor is the processor in the electronic device described in the above embodiments.
  • the readable storage medium includes computer readable storage medium, such as computer read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk, etc.
  • the embodiment of the present application also provides a chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the above image processing method embodiment Each process can achieve the same technical effect, so in order to avoid repetition, it will not be repeated here.
  • chips mentioned in the embodiments of the present application may also be called system-on-chip, system-on-chip, system-on-a-chip, or system-on-a-chip.
  • the term “comprising”, “comprising” or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or device. Without further limitations, an element defined by the phrase “comprising a " does not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising that element.
  • the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved. Functions are performed, for example, the described methods may be performed in an order different from that described, and various steps may also be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

本申请公开了一种像素结构、图像传感器、控制方法及装置、电子设备。像素结构包括：光电二极管，光电二极管的一端接地且另一端与传输开关管的源极连接；传输开关管，传输开关管的漏极分别与复位晶体管的源极和源跟随器的栅极连接；复位晶体管，复位晶体管的漏极与电源电压连接；源跟随器，源跟随器的漏极与电源电压连接，源跟随器的源极与选择管的漏极连接；选择管，选择管的源极与输出信号线连接；浮动扩散节点，浮动扩散节点包括至少两个电容器和设置于至少两个电容器之间的至少一个电容器控制开关。

Description

像素结构、图像传感器、控制方法及装置、电子设备
本申请要求于2021年6月24日提交国家知识产权局、申请号为202110704353.X、申请名称为“像素结构、图像传感器、控制方法及装置、电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于图像处理的技术领域，具体涉及一种像素结构、图像传感器、控制方法及装置、电子设备。
背景技术
随着科技的发展，图像采集设备以及配备有图像采集设备的电子设备受到了用户的广泛欢迎。其中，图像传感器是图像采集设备至关重要的元器件之一。
其中，基于电荷耦合器件(Charge Couple Device，CCD)的图像传感器和基于互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)的图像传感器是目前相关技术中广泛适用的两类图像传感器。尤其，具有低功耗、易集成和低成本等优势的CMOS图像传感器在数码相机、扫描设备等诸多类型的电子设备中均具有广泛地应用前景。
CMOS图像传感器中设有像素阵列，像素阵列的作用是收集光信号并将其转换成电信号，像素阵列对图像传感器的性能有着重要影响。相关技术中的像素结构主要分为无源像素结构和有源像素结构。其中，目前应用相对广泛的是有源像素结构。而在有源像素结构中，具有钳位光电二极管(Pinned Photodiode，PPD)的有源像素结构则应用最为广泛。
然而，对于相关技术中的PPD像素结构，其存在的问题是此类PPD像素结构在进行光电信号转换时的敏感度不够理想。
发明内容
本申请实施例的目的是提供一种像素结构、图像传感器、控制方法及装置、电子设备，能够解决PPD像素结构在进行光电信号转换时的敏感度不够理想的问题。
第一方面，本申请实施例提供了一种像素结构，像素结构包括：
光电二极管，光电二极管的一端接地且另一端与传输开关管的源极连接；传输开关管，传输开关管的漏极分别与复位晶体管的源极和源跟随器的栅极连接；
复位晶体管，复位晶体管的漏极与电源电压连接；源跟随器，源跟随器的漏极与电源电压连接，源跟随器的源极与选择管的漏极连接；
选择管，选择管的源极与输出信号线连接；
浮动扩散节点，浮动扩散节点与源跟随器的栅极连接，并包括至少两个电容器和设置于至少两个电容器之间的至少一个电容器控制开关。
第二方面，本申请实施例提供了一种图像传感器，该图像传感器包括如第一方面的像素结构。
第三方面，本申请实施例提供了一种电子设备，该电子设备包括如第二方面的图 像传感器。
第四方面，本申请实施例提供了一种像素结构的控制方法，用于控制如第一方面的像素结构，方法包括：
通过复位晶体管将浮动扩散节点复位；
通过传输开关管将来自光电二极管的电信号传输至浮动扩散节点；
控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出电信号；
通过选择管将电信号输出；
其中，目标量级与至少两个电容器中与源跟随器连通的电容的容量对应。
第五方面，本申请实施例提供了一种像素结构的控制装置，用于控制如第一方面的像素结构，装置包括：
复位模块，用于通过复位晶体管将浮动扩散节点复位；
传输模块，用于通过传输开关管将来自光电二极管的电信号传输至浮动扩散节点；
读出模块，用于控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出电信号；
输出模块，用于通过选择管将电信号输出；
其中，目标量级与至少两个电容器中与源跟随器连通的电容的容量对应。
第六方面，本申请实施例提供了一种图像采集方法，应用于图像采集设备，图像采集设备包括第一摄像模组和第二摄像模组，第一摄像模组包括如第一方面所述的像素结构；该方法包括：
通过第一摄像模组获取针对目标对象的对焦信息；
在第二摄像模组针对目标对象进行图像采集的情况下，控制第二摄像模组根据对焦信息进行对焦。
第七方面，本申请实施例提供了一种图像采集装置，应用于图像采集设备，图像采集设备包括第一摄像模组和第二摄像模组，第一摄像模组包括如第一方面所述的像素结构；该装置包括：
获取模块，用于通过第一摄像模组获取针对目标对象的对焦信息；
对焦模块，用于在第二摄像模组针对目标对象进行图像采集的情况下，控制第二摄像模组根据获取模块获取的对焦信息进行对焦。
第八方面，本申请实施例提供了一种电子设备，该电子设备包括处理器、存储器及存储在所述存储器上并可在所述处理器上运行的程序或指令，所述程序或指令被所述处理器执行时实现如第四方面或第六方面所述的方法的步骤。
第九方面，本申请实施例提供了一种可读存储介质，所述可读存储介质上存储程序或指令，所述程序或指令被处理器执行时实现如第四方面或第六方面所述的方法的步骤。
第十方面，本申请实施例提供了一种芯片，所述芯片包括处理器和通信接口，所述通信接口和所述处理器耦合，所述处理器用于运行程序或指令，实现如第四方面或第六方面所述的方法。
在本申请实施例中，像素结构包括光电二极管、复位晶体管、选择管、浮动扩散节点、选择管和浮动扩散节点。其中，光电二极管的一端接地且另一端与传输开关管 的源极连接。传输开关管的漏极分别与复位晶体管的源极和源跟随器的栅极连接。复位晶体管的漏极与电源电压连接。源跟随器的漏极与电源电压连接，源跟随器的源极与选择管的漏极连接。选择管的源极与输出信号线连接。其中，浮动扩散节点包括至少两个电容器和设置于至少两个电容器之间的至少一个电容器控制开关。由于浮动扩散节点包括至少两个电容器，并且至少两个电容器之间还设备有至少一个电容器控制开关，因此，可通过控制至少一个电容器控制开关，控制至少两个电容器中部分或全部电容器的通断，而使得浮动扩散节点具有不同的容量。由此，可以使得被光电二极管接收并转换为电信号的光信号以不同的量级被源跟随器读出。因此，能够提高PPD像素结构在进行光电信号转换时的敏感度。
附图说明
图1是本申请实施例的像素结构的电路示意图；
图2是本申请实施例的像素结构的工作原理图；
图3是本申请实施例的像素结构中永远在线像素的位置示意图之一；
图4是本申请实施例的像素结构中永远在线像素的位置示意图之二；
图5是本申请实施例的像素结构中永远在线像素与微棱镜的配合关系示意图之一；
图6是本申请实施例的像素结构中永远在线像素与微棱镜的配合关系示意图之二；
图7是本申请实施例的像素结构的控制方法的步骤流程图；
图8是本申请实施例的像素结构的控制装置的结构示意图；
图9是本申请实施例的像素结构的图像采集方法的步骤流程图；
图10是本申请实施例的像素结构的图像采集装置的结构示意图；
图11是本申请实施例的电子设备的结构示意图之一；
图12是本申请实施例的电子设备的结构示意图之二。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员获得的所有其他实施例，都属于本申请保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象，而不用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施，且“第一”、“第二”等所区分的对象通常为一类，并不限定对象的个数，例如第一对象可以是一个，也可以是多个。此外，说明书以及权利要求中“和/或”表示所连接对象的至少其中之一，字符“/”，一般表示前后关联对象是一种“或”的关系。
下面结合附图，通过具体的实施例及其应用场景对本申请实施例提供的图像处理方法、装置，及电子设备进行详细地说明。
本申请实施例提供的图像处理方法的执行主体可以为图像处理装置，该装置可以为电子设备，也可以为电子设备中的功能模块和/或功能主体，具体可以根据实际使用需求确定，本申请实施例不作限定。为了更加清楚地描述本申请实施例提供的图像处理方法，下面方法实施例中以图像处理方法的执行主体为图像处理装置为例进行示例 性地说明。
下面以各个实施例为例，对本申请实施例提供的像素结构、图像传感器、控制方法及装置、电子设备进行详细的说明。
如图1所示，本申请实施例提供了一种像素结构100。本申请实施例提供的像素结构100可以适用于CMOS摄像模组。CMOS摄像模组主要由镜头(Lens)、音圈马达(Voice Coil Motor，VCM)、红外滤光片(IR Filter)、CMOS图像传感器、数字信号处理器(Digital Signal Process，DSP)，以及软板(Flexible Printed Circuit，FPC)构成。
CMOS图像传感器的表面具有几十万到几百万个光电二极管，每个光电二极管上覆盖着微镜头(Micro-lens)和颜色过滤阵列(Color Filter Rarray)。微镜头用来将光线导入光电二极管，而颜色过滤阵列将光线进行滤波，其只允许与该颜色过滤阵列颜色所对应的波段光线通过。
CMOS摄像模组的基本工作流程为：音圈马达带动镜头达到对焦准确的位置，外部光线穿过镜头，经过红外滤光片的滤光，照射到感光二极管(Pixel)上，感光二极管将感知的光信号转换成电信号，通过放大电路，AD转换电路，形成数字信号矩阵(即图像)，再经过数字信号处理器的处理，压缩存储起来。
本申请实施例提供的像素结构100可以为PPD像素结构，其具体包括光电二极管(Photo diode，PD)200、传输开关管(Transfer Transistor，TX)300、复位晶体管(Reset Transistor，RST)400、源跟随器(Source Follower，SF)500、选择管(Select Transistor，SET)600，以及浮动扩散节点(Floating Diffusion，FD)700。
像素结构100的光电二极管200的一端接地且另一端与传输开关管300的源极连接。光电二极管200用于接收来自外部环境并经由镜头和红外滤光片进入图像传感器的光信号。光电二极管200为主要利用硅和锗两种元素做成的半导体，其上共存着带N级(带负电)和P(带正电)级的半导体，其互补效应所产生的电流可被处理芯片纪录和解读。由此，光电二极管200受到光照就会产生电荷，将光线转换成电信号。
像素结构100的传输开关管300的漏极分别与复位晶体管400的源极和源跟随器500的栅极连接。传输开关管300用于将来自光电二极管200的电信号传输至源跟随器500。
源跟随器500的漏极与电源电压800连接，源跟随器500的源极与选择管600的漏极连接。选择管600的源极与输出信号线900连接。源跟随器500能够将经由传输开关管300传输的电信号进行读出。
浮动扩散节点700与源跟随器500的栅极连接。浮动扩散节点700存在寄生电容并可以存储像素信号。浮动扩散节点700中寄生电容的容量影响源跟随器500对电信号进行读出时的读出量级。
复位晶体管400的漏极与电源电压800连接。复位晶体管400可以控制浮动扩散节点700进行复位。
其中，浮动扩散节点700包括至少两个电容器710和设置于至少两个电容器710之间的至少一个电容器控制开关720。
示例性地，至少两个电容器710的数量具体可以为两个、三个或者三个以上。至 少一个电容器控制开关720的数量具体可以为两个或者两个以上。
上述像素结构100的工作方式具体如下：
1.曝光：光照射产生的电子-空穴对会因PPD电场的存在而分开，电子移向n区，空穴移向p区；
2.复位：在曝光结束时，可以激活RST，以将读出区(n+区)复位到高电平；
3.复位电平读出：复位完成后，读出复位电平，其中包含MOS管的offset噪声，1/f噪声以及复位引入的kTC噪声，将读出的信号存储在第一个电容中；
4.电荷转移：激活TX，将电荷从感光区完全转移到n+区用于读出，此处的机制可以理解为类似于CCD中的电荷转移；
5.信号电平读出：将n+区的电压信号读出到第二个电容。此处的信号包括光电转换产生的信号，运放产生的offset，1/f噪声以及复位引入的kTC噪声；
6.信号输出：将存储在两个电容中的信号相减(如采用CDS，即可消除Pixel中的主要噪声)，得到的信号在经过模拟放大，然后经过ADC采样，即可进行数字化信号输出。
由于浮动扩散节点700包括至少两个电容器710，并且至少两个电容器710之间还设备有至少一个电容器控制开关720，因此，可通过控制至少一个电容器控制开关720，控制至少两个电容器710中部分或全部电容器的通断，而使得浮动扩散节点700具有不同的容量。由此，可以使得被光电二极管200接收并转换为电信号的光信号以不同的量级被源跟随器500读出。因此，能够提高像素结构100在进行光电信号转换时的敏感度。此外，还可以拓宽浮动扩散节点700动态可变范围。
可选地，本申请实施例中，至少两个电容器710中任意两个相邻电容器之间设有至少一个电容器控制开关720中的一个电容器控制开关。换言之，两个相邻的电容器之间均设有一个电容器控制开关。
示例性地，至少两个电容器710并联设置，并且至少两个电容器710中的每个电容器一端接地且另一端与传输开关管300的漏极、复位晶体管400的源极和源跟随器500的栅极连接。由此，各个电容器的通断可以通过电容器控制开关被分别独立地控制。
可选地，本申请实施例中，至少两个电容器710中的每个电容器的容量互不相同。通过将至少两个电容器710中的每个电容器的容量设置为互不相同，可以进一步拓宽浮动扩散节点700动态可变范围，并提高像素结构100在进行光电信号转换时的敏感度。
示例性地，如图1所示，至少两个电容器710可以包括相互并联且分别接地的第一电容器712、第二电容器714和第三电容器716。至少一个电容器控制开关720包括第一电容器控制开关722和第二电容器控制开关724。其中，第一电容器控制开关722设于第一电容器712和第二电容器714之间。第二电容器控制开关724设于第一电容器712和第三电容器716之间。第一电容器712、第二电容器714和第三电容器716远离源跟随器500的一端分别接地。以第一电容器712、第二电容器714和第三电容器716的容量比为第一电容器712：第二电容器714：第三电容器716＝1：3：4举例而言，第一电容器控制开关722和第二电容器控制开关724均断开时，只有第一电容器 712接入传输开关管300和源跟随器500之间，浮动扩散节点700的总电容为1；第一电容器控制开关722接通且第二电容器控制开关724断开时，第一电容器712和第二电容器714接入传输开关管300和源跟随器500之间，浮动扩散节点700的总电容为4；第一电容器控制开关722和第二电容器控制开关724均接通时，第一电容器712、第二电容器714和第三电容器716均接入传输开关管300和源跟随器500之间，浮动扩散节点700的总电容为8。由此，相比于仅有1个电容的宽浮动扩散节点，本申请实施例的宽浮动扩散节点700的动态可变范围拓宽了8倍，像素结构100在进行光电信号转换时的敏感度得到了有效提高。
可选地，本申请实施例中，如图2所示，光电二极管200包括多个常规像素点210和多个永远在线像素点220。
具体而言，如图3和图4所示，光电二极管200的像素阵列中包括常规像素201和永远在线像素点202或203(即图3和图4中黑色方块区域的像素点，以下简称AO像素点)。AO像素点包括带色彩信息的AO像素点(即图3和图4中的B、Gb、Gr、R构成的像素区域)和纯亮度信息AO像素点(即图3和图4中的四个W构成的像素区域)。在图3中，16×16的范围内可以有8个AO像素点。其中，纯亮度信息AO像素除了可以获取亮度信息以外，也可以具有相位检测自动对焦(Phase Detection Auto Focus)功能。由此，不论图像采集设备是否开启，AO像素都会以较低的帧率(10fps左右)持续输出，以实现对应功能。可以理解，光电二极管200的像素阵列可以为4合一像素阵列，或者9合一像素阵列，或者16合一像素阵列。如图5所示，可以在4个像素点上扣一个微棱镜，即四相位检测(Quarter Phase Detection，QPD)形式的设计。如图6所示，也可以在2个像素点上扣一个微棱镜，即双相位检测(Double Phase Detection，DPD)形式的设计。
本申请实施例中，具有永远在线(Always on，AO)功能的像素点可以使得芯片以低分辨率、低帧率、长时间地输出图像数据。结合AO功能，图像采集设备可以做一些跟AI相关的应用，例如智感支付、存在感知、人脸检测、手势识别、智慧亮屏、二维码扫描等。AO功能支持随时感知现有环境，使得图像采集设备从被动智能向主动智能进化，并可以自主感知环境，与用户进行主动交互。
本申请实施例还提供了一种图像传感器，图像传感器包括上述任一实施例的像素结构。
本申请实施例还提供了一种电子设备，电子设备包括上述任一实施例的图像传感器。
本申请实施例提供的电子设备包括镜头、音圈马达、红外滤光片、图像传感器、数字信号处理器，以及软板。在进行图像采集时，镜头用来实现聚光和对焦，镜头被音圈马达所包裹固定。其中，音圈马达的上下两端与弹片链接。在实现对焦时，可以通过通电，让马达产生电磁力，该磁力最终与弹片的弹力保持平衡。由此，马达的位置可以通过通电量的大小来进行控制，进而达到将马达和镜头推到合焦位置的目的。外部光线投射向第一摄像模组中的红外滤光片后，红外滤光片可以滤除投射向图像传感器的不必要光线，防止图像传感器产生伪色或波纹，以提高其有效分辨率和色彩还原性。通过图像传感器后的光线就可以被图像传感器感知。图像传感器感光后将光信 号转换为电信号，完成暗电流矫正后经过放大并被ADC转换为数字信号，形成生图输出给图像处理系统。
如图7所示，本申请实施例还提供了一种像素结构的控制方法，用于控制如上述任一实施例的像素结构。该方法应用于图像采集设备，该图像采集设备可以为用于实现图像采集的设备，也可以为配置由图像采集的模块或部件的电子设备。
示例性地，本申请实施例提供的图像处理方法适用的图像采集设备可以为单反相机或单片机，也可以为智能手机、个人电脑或可穿戴智能设备。
上述方法包括以下的S101至S104：
S101、像素结构的控制装置通过复位晶体管将浮动扩散节点复位。
可以理解，在通过复位晶体管将浮动扩散节点复位之前，光电二极管已经进行了曝光操作。在曝光结束时，则可以通过S101激活复位晶体管，以将读出区(n+区)复位到高电平。
S102、像素结构的控制装置通过传输开关管将来自光电二极管的电信号传输至浮动扩散节点。
可以理解，在复位晶体管将浮动扩散节点复位之后，则需要开启传输开关管，以将来自光电二极管的电信号传输至浮动扩散节点。
S103、像素结构的控制装置控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出电信号。
可以理解，通过控制至少一个电容器控制开关的通断，可改变浮动扩散节点电容的总容量，以使得来自光电二极管的电信号可以被以不同的量级读出。
S104、像素结构的控制装置通过选择管将电信号输出。
通过将电信号输出，可在将进入光电二极管的光信号转换为电信号后，对该电信号进行存储，以完成图像的采集和存储。
其中，目标量级与至少两个电容器中与源跟随器连通的电容的容量对应。换言之，上述目标量级可通过对电容器的容量的调节而变换。接入源跟随器和传输开关管之间的电容器的容量影响着源跟随器在读出电信号时的目标量级。
如此，上述像素结构的控制方法可以使得被光电二极管接收并转换为电信号的光信号以不同的量级被源跟随器读出。因此，能够提高像素结构在进行光电信号转换时的敏感度。此外，还可以拓宽浮动扩散节点动态可变范围。
需要说明的是，本申请实施例提供的图像处理方法，执行主体可以为图像处理装置，或者该图像处理装置中的用于执行图像处理方法的控制模块。本申请实施例中以图像处理装置执行图像处理方法为例，说明本申请实施例提供的图像处理装置。
如图8所示，本申请实施例提供了一种像素结构的控制装置800，用于控制上述任一实施例的像素结构，该控制装置800包括：
复位模块810，用于控制复位晶体管将浮动扩散节点复位。
传输模块820，用于控制传输开关管将来自光电二极管的电信号传输至浮动扩散节点。
读出模块830，用于控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出电信号。
输出模块840，用于控制选择管将电信号输出。
其中，目标量级与至少两个电容器中与源跟随器连通的电容的容量对应。
如此，上述像素结构的控制装置800可以使得被光电二极管接收并转换为电信号的光信号以不同的量级被源跟随器读出。因此，能够提高像素结构在进行光电信号转换时的敏感度。此外，还可以拓宽浮动扩散节点动态可变范围。
本申请实施例中的控制装置可以是装置，也可以是终端中的部件、集成电路、或芯片。该装置可以是移动电子设备，也可以为非移动电子设备。示例性地，移动电子设备可以为手机、平板电脑、笔记本电脑、掌上电脑、车载电子设备、可穿戴设备、超级移动个人计算机(ultra-mobile personal computer，UMPC)、上网本或者个人数字助理(personal digital assistant，PDA)等，非移动电子设备可以为服务器、网络附属存储器(Network Attached Storage，NAS)、个人计算机(personal computer，PC)、电视机(television，TV)、柜员机或者自助机等，本申请实施例不作具体限定。
本申请实施例提供的控制装置能够实现图7的方法实施例实现的各个过程，为避免重复，这里不再赘述。
如图9所示，本申请实施例还提供了一种图像采集方法，应用于图像采集设备。该图像采集设备可以为用于实现图像采集的设备，也可以为配置由图像采集的模块或部件的电子设备。
示例性地，本申请实施例提供的图像处理方法适用的图像采集设备可以为单反相机或单片机，也可以为智能手机、个人电脑或可穿戴智能设备。
该图像采集设备包括第一摄像模组和第二摄像模组，第一摄像模组包括如上述任一实施例的像素结构。
上述方法包括以下的S201至S202：
S201、图像采集装置通过第一摄像模组获取针对目标对象的对焦信息。
可以理解，目标对象为第一摄像模组的图像采集对象。
示例性地，目标对象可以为人物或静物或景色。
S202、图像采集装置在第二摄像模组针对目标对象进行图像采集的情况下，控制第二摄像模组根据对焦信息进行对焦。
可以理解，第二摄像模组针对全部或部分的目标对象进行图像采集。
在本申请实施例中，该图像采集方法适用的图像采集设备为包括第一摄像模组和第二摄像模组的图像采集设备。通过第一摄像模组可以获取目标对象的对焦信息。由此，在第二摄像模组针对目标对象进行图像采集的情况下，第一摄像模组已经得到了针对目标对象的对焦信息。由此，第二摄像模组可以根据该对焦信息，直接进行对焦。因而，对于包括第一摄像模组和第二摄像模组的图像采集设备而言，可以有效地降低对焦所需的时间，提高对焦效率。
此外，由于可以通过第一摄像模组获取针对目标对象的对焦信息，因此还可以利用该对焦信息，结合本申请实施例提供的像素结构具有的永远在线功能，辅助电子设备进行运动信息判断，以使得电子设备更好地实现智能亮屏、智能支付等功能。
如图10所示，本申请实施例提供了一种图像采集装置10，应用于图像采集设备，该图像采集设备包括第一摄像模组和第二摄像模组，第一摄像模组包括如上述任一实 施例的像素结构；该图像采集装置10包括：
获取模块11，用于通过第一摄像模组获取针对目标对象的对焦信息；
对焦模块12，用于在第二摄像模组针对目标对象进行图像采集的情况下，控制第二摄像模组根据获取模块11获取的对焦信息进行对焦。
在本申请实施例中，该图像采集装置10适用的图像采集设备为包括第一摄像模组和第二摄像模组的图像采集设备。通过第一摄像模组可以获取目标对象的对焦信息。由此，在第二摄像模组针对目标对象进行图像采集的情况下，第一摄像模组已经得到了针对目标对象的对焦信息。由此，第二摄像模组可以根据该对焦信息，直接进行对焦。因而，对于包括第一摄像模组和第二摄像模组的图像采集设备而言，图像采集装置10可以有效地降低对焦所需的时间，提高对焦效率。可选地，如图11所示，本申请实施例还提供一种电子设备90，包括处理器91，存储器92，存储在存储器92上并可在所述处理器91上运行的程序或指令，该程序或指令被处理器91执行时实现上述图像处理方法实施例的各个过程，且能达到相同的技术效果，为避免重复，这里不再赘述。
需要说明的是，本申请实施例中的电子设备包括上述所述的移动电子设备和非移动电子设备。
图12为实现本申请实施例的一种电子设备90的硬件结构示意图。
该电子设备90包括但不限于：射频单元91、网络模块92、音频输出单元93、输入单元94、传感器95、显示单元96、用户输入单元97、接口单元98、存储器99、以及处理器910等部件。
本领域技术人员可以理解，电子设备90还可以包括给各个部件供电的电源(比如电池)，电源可以通过电源管理系统与处理器91逻辑相连，从而通过电源管理系统实现管理充电、放电、以及功耗管理等功能。图12中示出的电子设备结构并不构成对电子设备的限定，电子设备可以包括比图示更多或更少的部件，或者组合某些部件，或者不同的部件布置，在此不再赘述。
应理解的是，本申请实施例中，输入单元94可以包括图形处理器(Graphics Processing Unit，GPU)941和麦克风942，图形处理器941对在视频捕获模式或图像捕获模式中由图像捕获装置(如摄像头)获得的静态图片或视频的图像数据进行处理。显示单元96可包括显示面板961，可以采用液晶显示器、有机发光二极管等形式来配置显示面板961。用户输入单元97包括触控面板971以及其他输入设备972。触控面板971，也称为触摸屏。触控面板971可包括触摸检测装置和触摸控制器两个部分。其他输入设备972可以包括但不限于物理键盘、功能键(比如音量控制按键、开关按键等)、轨迹球、鼠标、操作杆，在此不再赘述。存储器99可用于存储软件程序以及各种数据，包括但不限于应用程序和操作系统。处理器910可集成应用处理器和调制解调处理器，其中，应用处理器主要处理操作系统、用户界面和应用程序等，调制解调处理器主要处理无线通信。可以理解的是，上述调制解调处理器也可以不集成到处理器910中。
本申请实施例还提供一种可读存储介质，所述可读存储介质上存储有程序或指令，该程序或指令被处理器执行时实现上述图像处理方法实施例的各个过程，且能达到相 同的技术效果，为避免重复，这里不再赘述。
其中，所述处理器为上述实施例中所述的电子设备中的处理器。所述可读存储介质，包括计算机可读存储介质，如计算机只读存储器(Read-Only Memory，ROM)、随机存取存储器(Random Access Memory，RAM)、磁碟或者光盘等。
本申请实施例还提供了一种芯片，所述芯片包括处理器和通信接口，所述通信接口和所述处理器耦合，所述处理器用于运行程序或指令，实现上述图像处理方法实施例的各个过程，且能达到相同的技术效果，为避免重复，这里不再赘述。
应理解，本申请实施例提到的芯片还可以称为系统级芯片、系统芯片、芯片系统或片上系统芯片等。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。此外，需要指出的是，本申请实施方式中的方法和装置的范围不限按示出或讨论的顺序来执行功能，还可包括根据所涉及的功能按基本同时的方式或按相反的顺序来执行功能，例如，可以按不同于所描述的次序来执行所描述的方法，并且还可以添加、省去、或组合各种步骤。另外，参照某些示例所描述的特征可在其他示例中被组合。
通过以上的实施方式的描述，本领域的技术人员可以清楚地了解到上述实施例方法可借助软件加必需的通用硬件平台的方式来实现，当然也可以通过硬件，但很多情况下前者是更佳的实施方式。基于这样的理解，本申请的技术方案本质上或者说对现有技术做出贡献的部分可以以计算机软件产品的形式体现出来，该计算机软件产品存储在一个存储介质(如ROM/RAM、磁碟、光盘)中，包括若干指令用以使得一台终端(可以是手机，计算机，服务器，或者网络设备等)执行本申请各个实施例所述的方法。
上面结合附图对本申请的实施例进行了描述，但是本申请并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本申请的启示下，在不脱离本申请宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本申请的保护之内。

Claims (17)

  1. 一种像素结构(100)，所述像素结构(100)包括：
    光电二极管(200)，所述光电二极管(200)的一端接地且另一端与传输开关管(300)的源极连接；
    所述传输开关管(300)，所述传输开关管(300)的漏极分别与复位晶体管(400)的源极和源跟随器(500)的栅极连接；
    所述复位晶体管(400)，所述复位晶体管(400)的漏极与电源电压(800)连接；
    所述源跟随器(500)，所述源跟随器(500)的漏极与所述电源电压(800)连接，所述源跟随器(500)的源极与选择管(600)的漏极连接；
    所述选择管(600)，所述选择管(600)的源极与输出信号线(900)连接；
    浮动扩散节点(700)，所述浮动扩散节点(700)与所述源跟随器(500)的栅极连接，并包括至少两个电容器(710)和设置于所述至少两个电容器(710)之间的至少一个电容器控制开关(720)。
  2. 根据权利要求1所述的像素结构(100)，其中，所述至少两个电容器(710)中任意两个相邻电容器之间设有所述至少一个电容器控制开关(720)中的一个电容器控制开关。
  3. 根据权利要求1所述的像素结构(100)，其中，所述至少两个电容器(710)并联设置，并且所述至少两个电容器(710)中的每个电容器一端接地且另一端与所述传输开关管(300)的漏极、所述复位晶体管(400)的源极和所述源跟随器(500)的栅极连接。
  4. 根据权利要求1所述的像素结构(100)，其中，所述至少两个电容器(710)中的每个电容器的容量互不相同。
  5. 根据权利要求1所述的像素结构(100)，其中，所述至少两个电容器(710)包括相互并联且分别接地的第一电容器(712)、第二电容器(714)和第三电容器(716)，所述至少一个电容器控制开关(720)包括第一电容器控制开关(722)和第二电容器控制开关(724)，所述第一电容器控制开关(722)设于所述第一电容器(712)和所述第二电容器(714)之间，所述第二电容器控制开关(724)设于所述第一电容器(712)和所述第三电容器(716)之间。
  6. 根据权利要求1至5中任一项所述的像素结构(100)，其中，所述光电二极管(200)包括多个常规像素点(210)和多个永远在线像素点(220)。
  7. 一种图像传感器，所述图像传感器包括如权利要求1至6中任一项所述的像素结构。
  8. 一种电子设备，所述电子设备包括如权利要求7所述的图像传感器。
  9. 一种像素结构的控制方法，用于控制如权利要求1至6中任一项所述的像素结构，所述方法包括：
    通过复位晶体管将浮动扩散节点复位；
    通过传输开关管将来自光电二极管的电信号传输至所述浮动扩散节点；
    控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出所述电信号；
    通过选择管将所述电信号输出；
    其中，所述目标量级与至少两个电容器中与所述源跟随器连通的电容的容量对应。
  10. 一种像素结构的控制装置，用于控制如权利要求1至6中任一项所述的像素结构，所述装置包括：
    复位模块，用于通过复位晶体管将浮动扩散节点复位；
    传输模块，用于通过传输开关管将来自光电二极管的电信号传输至所述浮动扩散节点；
    读出模块，用于控制至少一个电容器控制开关的通断，使源跟随器以目标量级读出所述电信号；
    输出模块，用于通过选择管将所述电信号输出；
    其中，所述目标量级与至少两个电容器中与所述源跟随器连通的电容的容量对应。
  11. 一种图像采集方法，应用于图像采集设备，所述图像采集设备包括第一摄像模组和第二摄像模组，所述第一摄像模组包括如权利要求1至6中任一项所述的像素结构；所述方法包括：
    通过所述第一摄像模组获取针对目标对象的对焦信息；
    在所述第二摄像模组针对所述目标对象进行图像采集的情况下，控制所述第二摄像模组根据所述对焦信息进行对焦。
  12. 一种图像采集装置，应用于图像采集设备，所述图像采集设备包括第一摄像模组和第二摄像模组，所述第一摄像模组包括如权利要求1至6中任一项所述的像素结构；所述装置包括：
    获取模块，用于通过所述第一摄像模组获取针对目标对象的对焦信息；
    对焦模块，用于在所述第二摄像模组针对所述目标对象进行图像采集的情况下，控制所述第二摄像模组根据所述获取模块获取的所述对焦信息进行对焦。
  13. 一种电子设备，包括处理器，存储器及存储在所述存储器上并可在所述处理器上运行的程序或指令，所述程序或指令被所述处理器执行时实现如权利要求9或11所述的控制方法的步骤。
  14. 一种可读存储介质，所述可读存储介质上存储程序或指令，所述程序或指令被处理器执行时实现如权利要求9或11所述的控制方法的步骤。
  15. 一种芯片，所述芯片包括处理器和通信接口，所述通信接口和所述处理器耦合，所述处理器用于运行程序或指令，实现如权利要求9或11所述的控制方法的步骤。
  16. 一种计算机程序产品，所述计算机程序产品被存储在非易失的存储介质中，所述计算机程序产品被至少一个处理器执行以实现如权利要求9或11所述的控制方法的步骤。
  17. 一种电子设备，包括所述电子设备被配置成用于执行如权利要求9或11所述的控制方法的步骤。
PCT/CN2022/101307 2021-06-24 2022-06-24 像素结构、图像传感器、控制方法及装置、电子设备 WO2022268216A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110704353.XA CN113571538A (zh) 2021-06-24 2021-06-24 像素结构、图像传感器、控制方法及装置、电子设备
CN202110704353.X 2021-06-24

Publications (1)

Publication Number Publication Date
WO2022268216A1 true WO2022268216A1 (zh) 2022-12-29

Family

ID=78162653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/101307 WO2022268216A1 (zh) 2021-06-24 2022-06-24 像素结构、图像传感器、控制方法及装置、电子设备

Country Status (2)

Country Link
CN (1) CN113571538A (zh)
WO (1) WO2022268216A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113571538A (zh) * 2021-06-24 2021-10-29 维沃移动通信有限公司 像素结构、图像传感器、控制方法及装置、电子设备
CN114143430A (zh) * 2021-11-30 2022-03-04 维沃移动通信有限公司 图像传感器、摄像模组、电子设备及图像获取方法
CN114040081A (zh) * 2021-11-30 2022-02-11 维沃移动通信有限公司 图像传感器、摄像模组、电子设备、对焦方法及介质
CN113973181A (zh) * 2021-11-30 2022-01-25 维沃移动通信有限公司 图像传感器、摄像模组和电子设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120262616A1 (en) * 2011-04-14 2012-10-18 Lg Innotek Co., Ltd. Pixel, pixel array, image sensor including the same and method for operating the image sensor
CN102970493A (zh) * 2011-08-30 2013-03-13 全视科技有限公司 多重转换增益图像传感器的多电平复位电压
CN105100573A (zh) * 2015-08-21 2015-11-25 广东欧珀移动通信有限公司 摄像模组及电子装置
CN105163011A (zh) * 2015-08-21 2015-12-16 广东欧珀移动通信有限公司 摄像模组及电子装置
CN110119684A (zh) * 2019-04-11 2019-08-13 华为技术有限公司 图像识别方法和电子设备
US20200066779A1 (en) * 2018-08-22 2020-02-27 Stmicroelectronics (Research & Development) Limited Pixel circuit and method of operating the same in an always-on mode
CN111602386A (zh) * 2017-11-30 2020-08-28 Bae系统成像解决方案有限公司 缓解运动图片的led频闪
CN113571538A (zh) * 2021-06-24 2021-10-29 维沃移动通信有限公司 像素结构、图像传感器、控制方法及装置、电子设备

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120262616A1 (en) * 2011-04-14 2012-10-18 Lg Innotek Co., Ltd. Pixel, pixel array, image sensor including the same and method for operating the image sensor
CN102970493A (zh) * 2011-08-30 2013-03-13 全视科技有限公司 多重转换增益图像传感器的多电平复位电压
CN105100573A (zh) * 2015-08-21 2015-11-25 广东欧珀移动通信有限公司 摄像模组及电子装置
CN105163011A (zh) * 2015-08-21 2015-12-16 广东欧珀移动通信有限公司 摄像模组及电子装置
CN111602386A (zh) * 2017-11-30 2020-08-28 Bae系统成像解决方案有限公司 缓解运动图片的led频闪
US20200066779A1 (en) * 2018-08-22 2020-02-27 Stmicroelectronics (Research & Development) Limited Pixel circuit and method of operating the same in an always-on mode
CN110119684A (zh) * 2019-04-11 2019-08-13 华为技术有限公司 图像识别方法和电子设备
CN113571538A (zh) * 2021-06-24 2021-10-29 维沃移动通信有限公司 像素结构、图像传感器、控制方法及装置、电子设备

Also Published As

Publication number Publication date
CN113571538A (zh) 2021-10-29

Similar Documents

Publication Publication Date Title
WO2022268216A1 (zh) 像素结构、图像传感器、控制方法及装置、电子设备
WO2022268170A1 (zh) 图像处理方法、装置及电子设备
CN108141550B (zh) 高动态范围固态图像传感器及相机系统
Fossum CMOS image sensors: Electronic camera-on-a-chip
US10529756B2 (en) Imaging element and imaging apparatus
JP5082528B2 (ja) 固体撮像装置及び撮像装置
WO2019036237A1 (en) DETECTION CIRCUIT FOR PHOTO-SENSOR WITH STACKED SUBSTRATES
JP2001320630A (ja) 撮像装置
US20080225160A1 (en) Mobile Devices Having An Image Sensor For Charging A Battery
CN108234910B (zh) 成像系统和形成堆叠成像系统的方法及数字相机成像系统组件
US11438530B2 (en) Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof
US11303840B1 (en) Image sensor and sensing method thereof with polarizers for removing background noise
KR20150018954A (ko) 이미지 센서, 이의 동작 방법, 및 이를 포함하는 시스템
WO2017101560A1 (zh) 图像传感器及具有其的终端、成像方法
WO2023025080A1 (zh) 图像传感器、控制方法、控制装置、电子设备和存储介质
WO2017101864A1 (zh) 图像传感器、控制方法和电子装置
WO2022268132A1 (zh) 图像处理方法、装置及电子设备
WO2017101562A1 (zh) 图像传感器及具有其的终端、成像方法
CN117061845A (zh) 摄像头组件、电子设备、图像拍摄方法及装置
CN113286092B (zh) 像素处理电路、方法、装置及电子设备
CN113301262B (zh) 像素处理电路、方法、装置及电子设备
CN113301261B (zh) 像素处理电路、方法、装置及电子设备
JP7164579B2 (ja) 画像センサー及び電子デバイス
US11997401B2 (en) Image sensor, image acquisition apparatus, and electronic apparatus with improved performance
CN115118856A (zh) 图像传感器、图像处理方法、摄像头模组及电子设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22827708

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22827708

Country of ref document: EP

Kind code of ref document: A1