WO2022267371A1 - Système radiofréquence d'excitation de machine de gravure au plasma - Google Patents

Système radiofréquence d'excitation de machine de gravure au plasma Download PDF

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Publication number
WO2022267371A1
WO2022267371A1 PCT/CN2021/136737 CN2021136737W WO2022267371A1 WO 2022267371 A1 WO2022267371 A1 WO 2022267371A1 CN 2021136737 W CN2021136737 W CN 2021136737W WO 2022267371 A1 WO2022267371 A1 WO 2022267371A1
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Prior art keywords
radio frequency
temperature
dielectric window
heating
frequency system
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PCT/CN2021/136737
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English (en)
Chinese (zh)
Inventor
刘海洋
刘小波
孙宏博
郭颂
王铖熠
张霄
胡冬冬
许开东
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北京鲁汶半导体科技有限公司
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Priority to KR1020237024709A priority Critical patent/KR20230119721A/ko
Publication of WO2022267371A1 publication Critical patent/WO2022267371A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present application relates to the technical field of semiconductor chip production equipment, in particular to an excitation radio frequency system for a plasma etching machine.
  • non-volatile materials such as Pt, Ru, Ir, NiFe, and Au are mainly dry-etched by inductively coupled plasma (ICP).
  • ICP inductively coupled plasma
  • Inductively coupled plasma is typically generated by coils positioned outside the plasma processing chamber adjacent to a dielectric window, and process gases within the chamber are ignited to form the plasma.
  • voltages between different parts of the radio frequency coil are capacitively coupled into the plasma. While this coupling facilitates ignition and stabilization, the capacitively coupled portion can induce locally enhanced voltages throughout the plasma sheath. This can accelerate ions out of the plasma to locally affect the dielectric window, causing localized sputtering damage.
  • metal gate materials such as Model, Ta, etc.
  • high-k gate dielectric materials such as Al2O3
  • HfO2 and ZrO2 The demand for dry etching of new non-volatile materials such as HfO2 and ZrO2 continues to increase, to solve the sidewall deposition and particle contamination of non-volatile materials during dry etching, and to improve the efficiency of the plasma processing chamber Cleaning process efficiency is essential.
  • dielectric window heating is an important means of reducing deposition.
  • the heating of the dielectric window of the existing plasma etching machine adopts the method of air heating, but this heating method has low heating efficiency due to the scattered warm air, and it is easy to cause high temperature on the side wall other than the dielectric window, which is easy to make the operator Burns, vulnerable components and other issues.
  • this method also needs to use a very complicated protection device, which is costly and not conducive to heat dissipation.
  • FIG. 1 shows the existing plasma etching machine dielectric window heating technology, the main components shown are, radio frequency coil 1, dielectric window 2, metal inner shield 3, heating net 4a, heat sending fan 5, outer shield 6.
  • the radio frequency coil 1 generates plasma and passes through the dielectric window 2 to carry out the process.
  • the heating grid 4a generates heat, which is blown to the dielectric window 2 by the heat sending fan 5 in the direction shown by the arrow in the schematic diagram for heating.
  • the metal inner shield 3 As the wind and heat dissipate, the temperature will become higher and higher, which will easily cause injury to the operator, and then the outer shield 6 is provided for protection.
  • the disadvantage of this method is that on the one hand, the heat sent by the fan is scattered, and the heating efficiency is low.
  • the coil and other electrical components such as matching devices will be heated at the same time, resulting in high temperature and fragile electrical components, and high temperature of the shielding cover.
  • other shielding covers are arranged outside, the structure is complicated, which not only takes up extra space but also increases the cost.
  • the heating of the dielectric window of the existing plasma etching machine also adopts a heating plate device on the top of the dielectric window (as shown in Figure 2).
  • the heating plate 7 is placed between the radio frequency coil 1 and the dielectric window 2 .
  • the heating plate 7 is much more optimized than the heating method shown in Figure 1 in terms of heating rate and occupied space, it requires strict bonding between the heating plate 7 and the dielectric window 2, and the process itself without any bubbles is a big risk point. .
  • local air bubbles in the heating plate and dielectric window also occurred to varying degrees, resulting in local overheating, burning, and damage.
  • Each exemplary embodiment of the present application provides an excitation radio frequency system for a plasma etching machine.
  • an excitation radio frequency system of a plasma etching machine the plasma etching machine includes a plasma reaction chamber, the excitation radio frequency system is arranged on the top of the plasma reaction chamber, and the excitation radio frequency system includes:
  • a dielectric window configured as a top wall of the plasma reaction chamber
  • the radio frequency coil is arranged above the dielectric window
  • the heating element is attached to the upper surface of the dielectric window and is in direct contact with the dielectric window, and the heating element is located between the radio frequency coil and the dielectric window;
  • a temperature uniform layer is laid above the heating element and is in direct contact with the heating element.
  • the heating element includes a heating wire
  • the heating wire can be laid into an arbitrary shape unit
  • the shape unit includes a plurality of radially outwardly radiating from the center of the dielectric window, and a plurality of the shape units They are evenly spaced and connected in sequence along the circumferential direction of the dielectric window, and the temperature uniform layer follows the shape of the heating element.
  • each of the shape units is formed as a strip structure, and the strip structure is formed by extending parallel to each other at both ends of the heating wire.
  • each of the shape units is formed into a fan-shaped structure
  • the fan-shaped structure is formed by bending and extending the two ends of the heating wire in a "bow" shape, and the two ends of the heating wire are symmetrical distributed.
  • the excitation radio frequency system further includes: an insulating layer, the insulating layer is wrapped around the heating element, and the insulating layer is provided between the heating element and the temperature uniform layer.
  • the insulating layer is provided between the heating element and the upper surface of the dielectric window.
  • the temperature uniform layer is wrapped with the insulating layer.
  • the excitation radio frequency system further includes: a first matching network and a first excitation radio frequency power supply, the temperature uniform layer is a Faraday temperature uniform layer, and the first matching network is connected between the first excitation radio frequency power supply and the first excitation radio frequency power supply. between the Faraday uniform layers.
  • the excitation radio frequency system further includes: a second matching network and a second excitation radio frequency power supply, and the second matching network is connected between the second excitation radio frequency power supply and the radio frequency coil.
  • the excitation radio frequency system further includes: a heating system, the heating system includes a heating power supply, a solid state relay, a temperature controller and a temperature measuring sensor connected in sequence, and the heating power supply is turned on through the solid state relay after being energized
  • the heating element the temperature measuring sensor is arranged on the temperature uniform layer to detect the temperature of the temperature uniform layer
  • the temperature controller is connected between the solid state relay and the temperature measuring sensor, so The temperature signal collected by the temperature sensor is transmitted to the temperature controller, and the temperature controller processes the temperature signal into a feedback signal and transmits it to the solid state relay for controlling the closing of the connecting circuit.
  • Another aspect of the present application also provides a plasma etching machine, comprising:
  • the excitation radio frequency system is provided with air holes on the dielectric window of the excitation radio frequency system, and the gas source passes the reaction gas into the plasma cavity through the air holes;
  • the electrode is fixed in the cavity of the plasma reaction chamber, and the wafer is supported on the electrode;
  • the vacuum processing assembly includes a pressure control valve and a vacuum pump, and the pressure control valve is connected between the cavity of the plasma reaction chamber and the vacuum pump.
  • the excitation radio frequency system of the plasma etching machine not only has a high heating rate, occupies a small space, but also has a good temperature uniformity effect, and can also avoid the damage caused by the generation of air bubbles between the heating plate and the dielectric window .
  • the excitation RF system adopts the Faraday disk cleaning mode, which provides a reliable solution for the thorough cleaning of the dielectric window and the air inlet nozzle.
  • the excitation radio frequency system also avoids damage due to the generation of air bubbles between the heating plate and the dielectric window. It adopts the Faraday disk cleaning mode to thoroughly clean the dielectric window and the air inlet nozzle.
  • FIG. 1 is a schematic structural diagram of a conventional plasma etching machine dielectric window heating technology.
  • FIG. 2 is a schematic structural diagram of adding a heating plate to the dielectric window of the existing plasma etching machine.
  • FIG. 3 is a schematic structural diagram of a dielectric window according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of the overall structure of an excitation radio frequency system of a plasma etching machine according to an embodiment of the present application.
  • FIG. 5 is a layout diagram of a rectangular heating wire in an embodiment of the present application.
  • FIG. 6 is a layout diagram of a rectangular Faraday temperature uniform layer in an embodiment of the present application.
  • FIG. 7 is a layout diagram of a trapezoidal heating wire in an embodiment of the present application.
  • FIG. 8 is a layout diagram of a trapezoidal Faraday temperature uniform layer in an embodiment of the present application.
  • Fig. 9 is a side view of a dielectric window in an embodiment of the present application.
  • Fig. 10 is a cross-sectional view of a Faraday temperature uniform layer and a heating wire in an embodiment of the present application.
  • Fig. 11 is a working principle diagram of two heating systems in an embodiment of the present application.
  • Fig. 12a and Fig. 12b are comparison diagrams of the temperature of the medium window when there is a non-Radian temperature uniform layer in an embodiment of the present application.
  • FIG. 13 is a schematic diagram showing the performance of a dielectric window and an air inlet nozzle MTBC according to an embodiment of the present application.
  • radio frequency coil 1, radio frequency coil; 2, dielectric window; 3, metal inner shield; 4a, heating net; 4b, uniform temperature layer; 5, heat supply fan; 6, outer shield; 7, heating plate; 8, shield; 9, heating wire; 12, gas source; 13, temperature controller; 14, solid state relay; 15, heating power supply; 16, temperature sensor; 17, plasma; 18, substrate sheet; 20, electrode; 22, plasma reaction chamber; 23, pressure control valve; 24, vacuum pump; 30, first matching network; 31, first excitation radio frequency power supply; 32, second matching network; 33, second excitation radio frequency power supply; 41, insulating layer.
  • the method of direct heating on the dielectric window 2 is considered, that is, the heating plate 7 is directly attached to the dielectric window 2, but the heating plate 7 of the ordinary layout It will shield the plasma, and directly attaching the heating plate 7 is easy to generate bubbles, and the parts will be damaged by local overheating during heating.
  • the dielectric window is simply heated. Reducing deposition is no longer sufficient for a sufficiently long MTBC duration.
  • An excitation radio frequency system of a plasma etching machine includes a plasma etching machine and an excitation radio frequency system, the excitation radio frequency system is arranged on the top of the plasma reaction chamber, and the plasma
  • the etching machine structure includes: a dielectric window 2, the dielectric window 2 is configured as the top wall of the plasma reaction chamber 22; a radio frequency coil 1, the radio frequency coil 1 is arranged above the dielectric window 2; a heating element, the The heating element is attached to the upper surface of the dielectric window 2 and is in direct contact with the dielectric window 2, the heating element is located between the radio frequency coil 1 and the dielectric window 2; the uniform temperature layer 4b, the uniform temperature The warm layer 4b is laid on the top of the heating element and is in direct contact with the heating element, and the heating element adopts a heating wire 9 .
  • the outside of the plasma etching machine includes a shielding cover 8, a pressure control valve 23 is provided at the lower opening of the shielding cover 8, a vacuum pump 24 is arranged on the pressure control valve 23, and a dielectric window 2 is located in the shielding cover 8, and the dielectric window 2 is a circular structure , the shielding cover 8 is divided into upper and lower spaces, the lower space is the plasma reaction chamber 22, the substrate sheet 18 is located in the plasma reaction chamber 22, the center of the dielectric window 2 is provided with a gas hole, and the gas source 12 is externally connected to the gas hole, and the medium
  • the window 2 is provided with a heating wire 9, and the upper surface of the heating wire 9 is provided with a Faraday temperature uniform layer 4b.
  • the heating wire 9 can be laid into any shape unit, and several shape units are arranged symmetrically around the air hole. There is a gap between each shape unit, and the Faraday temperature uniform layer 4b has the same laying shape as the heating wire 9;
  • the heating wire 9 is externally connected to the heating system, and the radio frequency coil 1 is placed on the heating wire 9 in a coiled shape.
  • the radio frequency coil 1 is externally connected to the radio frequency system. etch.
  • the plasma reaction chamber 22 has built-in electrodes, the substrate 18 is placed on the electrode 20, the wafer is placed on the substrate 18, the electrode 20 is located under the air hole in the center of the dielectric window 2, and the electrode 20 is externally connected to the radio frequency system.
  • the gas source 12 feeds the reaction gas, and the radio frequency coil 1 generates plasma under the joint action of the first exciting radio frequency power supply 31 and the first matching network 30 and the second matching network 32 and the second exciting radio frequency power supply 33
  • the body 17, the electrode 20 passes through the radio frequency to lead the plasma downward, and etches the wafer.
  • the radio frequency coil 1 generates plasma 17 in the plasma reaction chamber 22 under the joint action of the first excitation radio frequency power supply 31 and the second excitation radio frequency power supply 33, and the gas source 12 feeds the reaction gas to jointly etch the substrate sheet 18.
  • the reaction product of the etching process will be continuously deposited on the lower surface of the dielectric window 2 in the plasma reaction chamber 22, the heating wire 9 is pasted on the dielectric window 2, and the radio frequency coil 1 is located above the heating wire 9.
  • the heating wire 9 directly heats the dielectric window 2; at the same time, in order to solve the local overheating of the heating wire 9 due to the bubbles between the heating wire 9 and the dielectric window 2 during heating, and damage the components.
  • the heating wire 9 can be laid into any shape unit, and the shape unit includes a plurality of radially outwardly radiating from the center of the dielectric window 2, and the plurality of shape units are evenly spaced apart along the circumferential direction of the dielectric window 2 Arranged and connected in sequence, the temperature uniform layer 4b conforms to the shape of the heating element, that is, the temperature uniform layer 4b is consistent with the shape of the heating element.
  • the heating wire 9 is composed of one or several layout forms. Multiple identical structures are arranged symmetrically around the air hole. There is a gap between each group of heating wires 9, so that the dielectric window can be heated after the heating wire is energized. It can also avoid affecting the passage of plasma (as shown in Figure 5).
  • the outer structure of the Faraday temperature uniform layer 4b remains the same as that of the heating wire 9 (as shown in Figure 6).
  • the Faraday temperature uniform layer 4b can be integrated or segmented.
  • this application has the advantages of high heating efficiency, simple structure, good temperature uniformity, and greatly improved MTBC duration.
  • the heating wire 9 is wrapped with an insulating layer 41, preferably Kapton, and the heating wire 9 and the dielectric window 2 are fixed by bonding, and the insulation layer may not be added in the middle, and between the Faraday temperature uniform layer 4b and the heating wire 9 is also Adopt insulating layer 41 to isolate;
  • an insulating layer 41 preferably Kapton
  • the arrangement structure of the heating wire 9 is eight strip structures wound by one heating wire 9, the shape unit of the heating wire 9 is a strip structure, and the Faraday temperature uniform layer 4b is also eight centrally symmetrical.
  • Strip structure eight strip structures are arranged around the air hole, there are two parallel heating wires 9 in one strip structure, the strip structure is on the radius of the circle with the air hole as the center; among them, the Faraday temperature uniform layer 4b
  • the structure is a plurality of strip structures, corresponding to the strip structures wound by the heating wire 9 one by one.
  • the arrangement structure of the heating wire 9 is a plurality of fan-shaped structures wound by a heating wire 9, the shape unit of the heating wire 9 is a fan-shaped structure, and the Faraday temperature uniform layer 4b is also a plurality of fan-shaped structures symmetrical to the center, A number of fan-shaped structures are arranged around the air holes, and their lower bottoms are close to the air holes in turn.
  • the fan-shaped structures are on the radius of the circle with the air holes as the center; the fan-shaped structures are composed of two groups of continuous "bow"-shaped bending structures formed by folding the heating wire 9 , the width of one end of the "bow"-shaped bending structure near the air hole is smaller than that of the other end.
  • the outer structure of the Faraday temperature uniform layer 4b remains the same as that of the heating wire 9.
  • the outer diameter D1 of several fan-shaped Faraday temperature uniform layers 4b is greater than or equal to the diameter D3 of the dielectric window 2 inside the plasma etching chamber, and the Faraday temperature uniform layer 4b
  • the inner diameter D2 of the central circular structure matches the outer diameter of the air intake in the middle, and the angle A of the gap between two adjacent fan-shaped structures is between 2 degrees and 15 degrees, preferably 5 degrees in this application, and the angle B of the fan-shaped structure Between 5°C and 20°C, 13°C is preferred here;
  • the structure of the Faraday temperature uniform layer 4b is a plurality of fan-shaped structures, one by one corresponding to the strip structure wound by the heating wire 9 .
  • heating wire can be composed of a single or multiple wires.
  • the heating system includes a heating power supply 15 , a solid state relay 14 , and a temperature controller 13 connected in sequence, and the temperature controller 13 is installed on the radio frequency coil 1 .
  • the temperature controller 13 is installed at the position of the radio frequency coil 1 and is also provided with a temperature sensor 16.
  • the heating system sets a certain heating temperature upper limit through the temperature controller 13.
  • the heating power supply 15 is energized and passed through the solid state relay 14 to the heating wire 9.
  • the temperature sensor 16 senses the heating temperature and transmits data to the temperature controller 13. When the temperature reaches the temperature controller 13 After setting the temperature, the feedback signal is disconnected through the control circuit of the solid state relay 14. When the temperature drops below the set temperature, the temperature sensor 16 detects the temperature drop and then transmits the data to the temperature controller 13. The feedback signal passes through the solid state relay 14 to control the circuit again. Closed for heating, in this way, stable heating of the dielectric window 2 is realized (as shown in FIG. 8 ).
  • the gap left between the wire groups of the heating wire 9 makes the device It does not affect the passage of the electric field of the radio frequency coil 1, that is, it does not affect the plasma intensity formed by the radio frequency coil 1 in the ion reaction chamber; in addition, the heating wire 9 is directly attached to the dielectric window 2, and the heating wire 9 directly heats the dielectric window 2, and the heat loss is small .
  • the heating wire 9 is wrapped with an insulating layer 41, and a Faraday temperature uniform layer 4b is also provided between the heating wire 9 and the radio frequency coil 1, and the Faraday temperature uniform layer 4b is arranged along the heating wire 9;
  • One layer of Faraday temperature uniform layer 4b, the Faraday temperature uniform layer 4b has the same shape and layout as the heating wire 9, and is closely bonded.
  • the uniform temperature layer 4b is also used as a Faraday radio frequency access electrode, and the heating wire 9 and the Faraday temperature uniform layer 4b are insulated from each other.
  • This solution of this application solves the temperature uniformity and uses the Faraday mode for cleaning.
  • the present application designs the shape of the heating plate to avoid or reduce the impact of the heating plate on the plasma by reserving gaps and other means, and its shape matches the shape of the Faraday-Faraday temperature uniform layer 4b.
  • the upper layer of the heating wire 9 is covered with the Faraday temperature uniform layer 4b, which has an excellent temperature uniformity effect. As shown in FIG. The region density is higher, and the center temperature of the entire dielectric window 2 tends to be higher, and this trend is more obvious in the process. It can be seen from Fig. 12b that after adding the Faraday temperature uniform layer 4b, the temperature of the center and edge of the dielectric window 2 tends to be consistent.
  • the radio frequency system of the present invention includes two sets of matching networks and exciting radio frequency power supplies, one matching network line is connected to the radio frequency coil 1, and the other matching network 30 lines is connected to the Faraday temperature uniform layer 4b; the Faraday temperature uniform layer 4b is in a suspended state during the process, and The heating wire 9 works together with the dielectric window 2 to achieve uniform temperature and reduce the contamination of the dielectric window 2.
  • the Faraday temperature uniform layer 4b switches to the Faraday cleaning mode. At this time, the Faraday temperature uniform layer 4b is connected to the radio frequency.
  • Figure 13 shows a schematic diagram of the performance of an embodiment of the present application in the medium window and the MTBC of the air intake nozzle.
  • the optimization is huge, and the Faraday temperature uniform layer 4b and the heating wire 9 work together to greatly extend the duration of MTBC.
  • Fig. 11 is a working principle diagram of two groups of heating systems in an embodiment of the present application.
  • the heating system includes a solid state relay, a temperature controller and a temperature measuring sensor connected in sequence, and the heating power supply is connected through the solid state relay after being energized.
  • the heating element, the temperature measuring sensor is set on the temperature uniform layer to detect the temperature of the temperature uniform layer
  • the temperature controller is connected between the solid state relay and the temperature measuring sensor, the temperature signal collected by the temperature measuring sensor is transmitted to the temperature controller, and the temperature The controller processes the temperature signal as a feedback signal and transmits it to the solid state relay to control the closure of the connected circuit.
  • the temperature controller controls the solid state relay to be powered off; when the heating temperature does not reach the preset temperature, the temperature controller controls the solid state relay to be powered on.

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Abstract

La présente invention appartient au domaine technique des appareils de production de puces à semi-conducteur, en particulier à un système radiofréquence d'excitation d'une machine de gravure au plasma. La machine de gravure au plasma comprend une chambre de réaction au plasma. Le système radiofréquence d'excitation comprend : une fenêtre diélectrique, la fenêtre diélectrique étant configurée en tant que paroi supérieure de la chambre de réaction au plasma ; une bobine radiofréquence, la bobine radiofréquence étant agencée au-dessus de la fenêtre diélectrique ; un élément chauffant, l'élément chauffant étant fixé à une surface supérieure de la fenêtre diélectrique et étant en contact direct avec la fenêtre diélectrique, et l'élément chauffant étant situé entre la bobine radiofréquence et la fenêtre diélectrique ; et une couche de température uniforme, la couche de température uniforme étant posée sur le dessus de l'élément chauffant et étant en contact direct avec l'élément chauffant. Au moyen de la présente invention, les surfaces inférieures de la fenêtre diélectrique et d'une buse d'admission de gaz peuvent être soigneusement nettoyées, et les sous-produits d'impact sont pompés à distance par une pompe d'aspiration placée au fond.
PCT/CN2021/136737 2021-06-23 2021-12-09 Système radiofréquence d'excitation de machine de gravure au plasma WO2022267371A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237024709A KR20230119721A (ko) 2021-06-23 2021-12-09 플라즈마 에처의 여기 rf 시스템

Applications Claiming Priority (2)

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