WO2022266880A1 - 压电材料及压电装置 - Google Patents

压电材料及压电装置 Download PDF

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WO2022266880A1
WO2022266880A1 PCT/CN2021/101800 CN2021101800W WO2022266880A1 WO 2022266880 A1 WO2022266880 A1 WO 2022266880A1 CN 2021101800 W CN2021101800 W CN 2021101800W WO 2022266880 A1 WO2022266880 A1 WO 2022266880A1
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piezoelectric
substrate
electrode
doping
equal
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PCT/CN2021/101800
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English (en)
French (fr)
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花慧
陈右儒
尹晓峰
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to US17/778,172 priority Critical patent/US20240215453A1/en
Priority to EP21946381.7A priority patent/EP4201887A4/en
Priority to CN202180001620.5A priority patent/CN115734944A/zh
Priority to JP2023524419A priority patent/JP2024523957A/ja
Priority to PCT/CN2021/101800 priority patent/WO2022266880A1/zh
Publication of WO2022266880A1 publication Critical patent/WO2022266880A1/zh

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    • H—ELECTRICITY
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    • G—PHYSICS
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/016—Input arrangements with force or tactile feedback as computer generated output to the user
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    • C04B2235/768—Perovskite structure ABO3

Definitions

  • the present disclosure relates to the field of piezoelectric technology, in particular to a piezoelectric material and a piezoelectric device.
  • the tactile reproduction device based on the piezoelectric material can adjust the surface friction of the substrate through the resonance between the piezoelectric material layer and the substrate, so as to realize the texture reproduction of the object on the substrate surface.
  • the present disclosure provides a piezoelectric material, comprising:
  • a substrate, the crystal structure of the substrate is an ABO 3 -type perovskite structure, the perovskite structure includes a coexisting rhombohedral structure and a tetragonal structure, and the substrate is located near a quasi-isomorphic phase boundary; and,
  • the doping elements are used to replace the A-site elements or B-site elements in the perovskite structure, or to fill the gaps in the perovskite structure, the doping elements are used to increase the The difference between the lattice constants of the rhombohedral structure and the tetragonal structure.
  • the substrate is lead zirconate titanate, and the ratio of zirconium to titanium in the lead zirconate titanate is 52:48 or 53:47.
  • the doping element is used to replace the A-site element in the perovskite structure, and the doping element and the A-site element in the perovskite structure Valence is the same.
  • the substrate is lead zirconate titanate
  • the doping element is calcium
  • the molar percentage of the doping element in the substrate is less than or equal to 20%.
  • the molar percentage of the doping element in the substrate is less than or equal to 10%.
  • the doping element is used to replace the B-site element in the perovskite structure, and the doping element and the B-site element in the perovskite structure Valence is the same.
  • the substrate is lead zirconate titanate
  • the doping element is manganese
  • the doping element is used to fill gaps in the perovskite structure, and the atomic weight of the doping element is less than or equal to 6.
  • the substrate is lead zirconate titanate
  • the doping element includes at least one of the following: carbon and boron.
  • the present disclosure provides a piezoelectric device, comprising: a substrate, and a piezoelectric element disposed on one side of the substrate, the piezoelectric element comprising a first electrode, a piezoelectric layer and The second electrode, wherein the material of the piezoelectric layer includes the piezoelectric material described in any embodiment.
  • the substrate is a display substrate
  • the display substrate includes a display area and a non-display area located at the periphery of the display area
  • the piezoelectric element is arranged on the light-emitting side of the display substrate .
  • the orthographic projection of the piezoelectric element on the display substrate is located in the display area, the thickness of the piezoelectric layer is less than or equal to 2 ⁇ m, and the first electrode and the The second electrodes are all transparent electrodes.
  • the thicknesses of the first electrode and the second electrode are greater than or equal to 200 nm and less than or equal to 500 nm.
  • the orthographic projection of the piezoelectric element on the display substrate is located in the non-display area, the number of the piezoelectric element is multiple, and the plurality of piezoelectric elements Divided into two groups, the piezoelectric elements in each group are arranged along the first direction, and are arranged close to two opposite sides of the substrate respectively.
  • materials of the first electrode and the second electrode both include platinum.
  • the film layer stresses of the first electrode, the piezoelectric layer and the second electrode are all greater than or equal to -300 MPa and less than or equal to 300 MPa.
  • the first electrode is disposed close to the substrate, the edge of the second electrode is indented relative to the edge of the piezoelectric layer, and the indentation amount is greater than or equal to 100 ⁇ m, and Less than or equal to 500 ⁇ m.
  • the first electrode is grounded, the second electrode is connected to an AC signal input terminal, and the AC signal input terminal is used to input an AC signal, and the frequency of the AC signal is equal to that of the substrate. the natural frequency.
  • the piezoelectric device further includes a touch layer, and the touch layer is disposed on a side of the piezoelectric element that is close to or away from the substrate.
  • Figure 1 shows a unit cell diagram of a perovskite structure provided by an embodiment of the present disclosure
  • Figure 2 shows a phase diagram of lead zirconate titanate provided by an embodiment of the present disclosure
  • Fig. 3 shows the variation trend of the lattice constant provided by the embodiment of the present disclosure
  • Fig. 4 shows the variation trend of the lattice strain provided by the embodiment of the present disclosure
  • FIG. 5 shows a schematic plan view of a piezoelectric device provided by an embodiment of the present disclosure
  • FIG. 6 shows a schematic cross-sectional structure diagram of a piezoelectric device provided by an embodiment of the present disclosure
  • Fig. 7 shows a schematic diagram of vibration of a piezoelectric device provided by an embodiment of the present disclosure.
  • An embodiment of the present disclosure provides a piezoelectric material, which includes: a base material and a doping element.
  • the crystal structure of the substrate is an ABO 3 -type perovskite structure
  • the perovskite structure includes a coexisting rhombohedral structure and a tetragonal structure
  • the substrate is located near the quasi-isomorphic phase boundary.
  • the doping element is used to replace the A-site element or the B-site element in the perovskite structure, or to fill the gap in the perovskite structure, and the doping element is used to increase the difference between the lattice constants of the diamond structure and the tetragonal structure.
  • FIG. 1 a unit cell diagram of a perovskite structure is shown.
  • the perovskite structure is octahedral.
  • the A-site elements of the ABO 3 -type perovskite structure are located at the vertices of the octahedron, the B-site elements are located at the center point of the octahedron, and the O-site elements are located at the face center of the octahedron.
  • the piezoelectric and ferroelectric properties of perovskite structures can be altered by substitutional or interstitial doping.
  • substitution doping can be realized by replacing the A-site element or the B-site element with a doping element.
  • Interstitial doping can be achieved by filling the gaps in the perovskite structure with doping elements.
  • the substrate near the quasi-isomorphic phase boundary is the coexistence of two phases (corresponding to two crystal structures: diamond structure and tetragonal structure).
  • the energy of the two crystal structures is close, and when the external conditions change, For example, when an electric field or stress is applied, the mutual conversion between the two crystal structures occurs, so that the components near the quasi-isotropic phase boundary have the maximum values of dielectric and piezoelectricity.
  • the substrate is lead zirconate titanate, which is not limited in this embodiment.
  • the doping element is an element such as calcium, carbon, or boron, which is not limited in this embodiment.
  • the base material is lead zirconate titanate and the doping element is calcium.
  • Lead zirconate titanate has an ABO 3 type perovskite structure. Wherein, the A site is Pb 2+ , and the B site is Zr 4+ or Ti 4+ .
  • Lead zirconate titanate is a solid solution of lead zirconate (PbZrO 3 ) and lead titanate (PbTiO 3 ).
  • the zirconium-rich composition has a rhombohedral structure, while the titanium-rich composition has a tetragonal structure.
  • the zirconium-titanium ratio in the lead zirconate titanate can be 52:48 or 53:47, the lead zirconate titanate is located near the quasi-isomorphic phase boundary.
  • the composition of the substrate lead zirconate titanate is located near the quasi-isomorphic phase boundary, and is in a state where two phases of rhombohedral structure and tetragonal structure coexist.
  • the inventors found that with the increase of Ca 2+ doping, the two phases still coexist, that is, the doping of Ca 2+ will not affect the existence of the quasi-isotype phase boundary region.
  • the lattice constant of Pb 1-x Ca x Zr 0.53 Ti 0.47 O 3 changes with the increase of Ca 2+ content. It can be seen from Figure 3 that with the increase of Ca 2+ content, the lattice constant a R of the rhombohedral structure increases continuously, and the short-axis lattice constant a T of the tetragonal structure also increases correspondingly, but the growth rate of a T is faster than a R is slow, so the difference between the lattice constant a R of the rhombohedral structure and the short-axis lattice constant a T of the tetragonal structure increases.
  • the lattice constant a R of the rhombohedral structure increases continuously, and the long-axis lattice constant c T of the tetragonal structure gradually decreases. Therefore, the relationship between the lattice constant a R of the rhombohedral structure and the long-axis lattice constant c T of the tetragonal structure The difference also increases. Therefore, the difference between the lattice constant a R of the rhombohedral structure and the lattice constant a T or c T of the tetragonal structure increases.
  • the source of strain near the quasi-isotropic phase boundary is mainly the mutual transformation between tetragonal phase and rhombohedral phase.
  • the amount of lattice strain generated during the phase transition is shown with reference to FIG. 4 . It can be seen from Figure 4 that with the increase of Ca 2+ content, during the transition from tetragonal phase to rhombohedral phase, due to the lattice constant (a R ) of rhombohedral structure and the lattice constant of tetragonal structure (a T or c T ) increases, making the lattice strain (a R -a T )/a T or (a R -c T )/c T increase accordingly.
  • (a R -a T )/a T represents the strain caused by the transformation of the short axis a T of the tetragonal phase into a R
  • (a R -c T )/c T represents the long axis c T of the tetragonal phase Transformed into the strain generated by a R , the actual lattice strain is between the two.
  • the base material of the perovskite structure is doped with doping elements, and is located near the quasi-isomorphic phase boundary, and the material located near the quasi-isomorphic phase boundary is prone to Interchange between rhombus structure and tetragonal structure.
  • doping elements can increase the difference between the lattice constants between the rhombohedral structure and the tetragonal structure, it can increase the amount of lattice strain caused by the phase transition, increase the maximum value of the intrinsic strain, and enhance the piezoelectricity of the piezoelectric material. effect.
  • it is beneficial to increase the amplitude of the piezoelectric device realize the effective conversion of electrical energy and mechanical energy, increase the tactile sensation, and improve the effect of tactile reproduction.
  • the piezoelectric material provided in this embodiment can realize the mutual conversion of mechanical energy and electrical energy.
  • the piezoelectric material When the piezoelectric material is subjected to mechanical pressure or tension, charges can be generated, and when the material is placed in an electric field, mechanical deformation of compression or tension occurs. Therefore, it can be applied in the fields of actuators and sensors, such as ultrasonic probes, pressure sensors, energy harvesters, tactile reproduction, microfluidics, and speakers.
  • the piezoelectric material provided in this embodiment can be prepared by methods such as sol-gel, magnetron sputtering, and chemical vapor deposition. Among them, the sol-gel method can accurately control the composition and doping ratio of the film layer.
  • the lead zirconate titanate film layer needs to be rapidly annealed at high temperature (>550° C.) and oxygen atmosphere for 30 minutes during the preparation process, so as to form a perovskite crystal phase.
  • high temperature >550° C.
  • oxygen atmosphere for 30 minutes during the preparation process, so as to form a perovskite crystal phase.
  • Doping elements can be added when configuring the sol-gel solution or preparing the magnetron sputtering target.
  • the doping element and the substituted element can be doped equivalently or non-equivalently.
  • non-equivalent doping refers to the doping of ions with different valences from the substituted element, including donor doping and acceptor doping, such as La 3+ replacing Pb 2+ and so on.
  • Equivalent doping means doping ions with the same valence as the replaced element, such as Ca 2+ replacing Pb 2+ and so on.
  • the inventors have found that when non-equivalent doping is carried out in the substrate, when the amount of the donor element or the acceptor element is too much, it is easy to cause the ion to be out of balance, the amount of positive/negative charge may increase, and the piezoelectric material may generate The uneven built-in electric field eventually causes the film to be easily broken down.
  • the doping element is used to replace the A-site element in the perovskite structure, and the doping element and the A-site element have the same valence in the perovskite structure. In this way, by performing equivalent substitution doping on the A-site element, the leakage current and dielectric constant of the piezoelectric material can not be affected, and the problem of ion imbalance caused by excessive doping amount can be avoided.
  • the A-site element is Pb 2+
  • the doping element replacing the A-site can be calcium, that is, Ca 2+ is used to replace Pb 2+ .
  • the mole percentage of the dopant element in the base material can be less than or equal to 20%. That is, the molar percentage of the doping element Ca 2+ in the total amount (Pb 2+ and Ca 2+ ) is less than or equal to 20%.
  • the molar percentage of the dopant element in the substrate may be less than or equal to 10%, as shown in FIG. 3 and FIG. 4 .
  • the doping element is used to replace the B-site element in the perovskite structure, and the doping element and the B-site element have the same valence in the perovskite structure. In this way, by performing equivalent substitution doping on B-site elements, the leakage current and dielectric constant of the piezoelectric material can not be affected, and the problem of ion imbalance caused by excessive doping amount can be avoided.
  • the B-site element is Zr 4+ or Ti 4+
  • the doping element replacing the B-site can be manganese, that is, replace Zr 4+ or Ti 4 with Mn 4+ + .
  • doping elements are used to fill gaps in the perovskite structure, and the atomic weight of the doping elements can be less than or equal to 6.
  • the interstitially doped doping elements may include at least one of the following: carbon and boron.
  • the piezoelectric device includes: a substrate 51 , and a piezoelectric element 52 disposed on one side of the substrate 51 .
  • the piezoelectric element 52 includes a first electrode 61, a piezoelectric layer 62, and a second electrode 63 stacked on one side of the substrate 51, wherein the material of the piezoelectric layer 62 may include the materials described in any of the above-mentioned embodiments. Piezoelectric material.
  • the substrate 51 may be a silicon base, or a silicon base provided with a thermal oxidation layer, that is, SiO 2 /Si(100), and the substrate 51 may also be a transparent glass, a display substrate, etc., which is not limited in this embodiment.
  • the material of the first electrode 61 can include at least one of metal materials such as platinum, gold, aluminum, and copper, and can also include indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO) and oxide At least one of transparent metal oxides such as graphene, which is not limited in this embodiment.
  • metal materials such as platinum, gold, aluminum, and copper
  • ITO indium Tin Oxide
  • IZO indium zinc oxide
  • oxide At least one of transparent metal oxides such as graphene, which is not limited in this embodiment.
  • the material of the second electrode 63 can include at least one of metal materials such as platinum, gold, aluminum, and copper, and can also include indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO) and oxide At least one of transparent metal oxides such as graphene, which is not limited in this embodiment.
  • metal materials such as platinum, gold, aluminum, and copper
  • ITO indium Tin Oxide
  • IZO indium zinc oxide
  • oxide At least one of transparent metal oxides such as graphene, which is not limited in this embodiment.
  • the shape of the piezoelectric element 52 is not limited, and may be a circle as shown in FIG. 5 , or may be a rectangle, a pentagon, a hexagon, or the like.
  • the first electrode 61 and the second electrode 63 are used to form an alternating electric field
  • the piezoelectric layer 62 is used to vibrate under the action of the alternating electric field and drive the substrate 51 to resonate.
  • the piezoelectric layer 62 deforms and generates a vibration signal.
  • the frequency of the vibration signal is the same as the frequency of the alternating electric field.
  • the piezoelectric layer 62 and the substrate 51 resonate, the amplitude is enhanced, and a tactile feedback signal is generated.
  • the resonance generated between the piezoelectric layer 62 and the substrate 51 can To adjust the friction force on the surface of the piezoelectric device, so as to realize the texture reproduction of the object.
  • the piezoelectric material since the piezoelectric material has a large intrinsic strain, the resonance amplitude of the piezoelectric layer and the substrate can be increased, the surface tactile sensation can be increased, and the effect of tactile reproduction can be improved.
  • the piezoelectric device provided in this embodiment may further include a touch layer, and the touch layer is disposed on a side of the piezoelectric element 52 that is close to or away from the substrate 51 . That is, the touch layer may be disposed between the substrate 51 and the piezoelectric element 52 , or may be disposed on a side of the piezoelectric element 52 away from the substrate 51 .
  • the piezoelectric device can have a touch function.
  • the film layer stress of the first electrode 61 may be greater than or equal to -300MPa and less than or equal to 300MPa, and the maximum may not exceed 400MPa.
  • the film layer stress of the piezoelectric layer 62 may be greater than or equal to -300MPa and less than or equal to 300MPa, and the maximum may not exceed 400MPa.
  • the film layer stress of the second electrode 63 may be greater than or equal to -300MPa and less than or equal to 300MPa, and the maximum may not exceed 400MPa. In this way, it is possible to prevent each film layer from being broken due to excessive stress or the substrate 51 from being warped as a whole.
  • the stress of each film layer can be measured by measuring the surface warpage before and after the film layer is fabricated, and the stress of the corresponding film layer can be calculated according to the measured surface warpage.
  • the first electrode 61 may be disposed close to the substrate 51 , as shown in FIG. 6 .
  • the edge of the second electrode 63 may be indented relative to the edge of the piezoelectric layer 62 . That is, the boundary of the orthographic projection of the second electrode 63 on the substrate 51 is indented relative to the boundary of the orthographic projection of the piezoelectric layer 62 on the substrate 51 . In this way, the severe lateral etching of the piezoelectric layer 62 can avoid the problem of direct contact between the first electrode 61 and the second electrode 63 to cause a short circuit.
  • An indent amount by which the edge of the second electrode 63 may be indented from the edge of the piezoelectric layer 62 may be greater than or equal to 100 ⁇ m and less than or equal to 500 ⁇ m. In this way, the short circuit between the first electrode 61 and the second electrode 63 can be avoided, and the effective vibration area of the piezoelectric layer 62 can be increased.
  • the piezoelectric device provided in this embodiment can be prepared according to the following steps: first, a substrate 51 is provided; then a first electrode material layer, a piezoelectric material layer, and a second electrode material layer are sequentially formed on the substrate 51; The material layer is etched to form a second electrode; then the piezoelectric material layer is etched to form a piezoelectric layer; finally the piezoelectric device as shown in 6 is obtained.
  • the shapes of the piezoelectric layer 62 and the second electrode 63 may be the same.
  • the second electrode 63 is a circle with a diameter of 8 mm
  • the second electrode 63 is a circle with a diameter of 9 mm. Since the edge of the second electrode 63 can be indented relative to the edge of the piezoelectric layer 62, the piezoelectric layer 62 is slightly larger than the second electrode 63, and the edge of the second electrode 63 is relatively larger than the edge of the piezoelectric layer 62 in FIG. Indent 500 ⁇ m.
  • the distance between the boundary of the orthographic projection of the second electrode 63 on the substrate 51 and the boundary of the substrate 51 may be 3 mm.
  • the size of the substrate 51 in FIG. 5 is 71mm*60mm.
  • the substrate 51 may be, for example, a display substrate, and the display substrate includes a display area AA and a non-display area BA located around the display area AA. Since the substrate 51 is a display substrate, the piezoelectric device can be equipped with a display function.
  • the piezoelectric element 52 may be disposed on the light emitting side of the display substrate, which is not limited in this embodiment. .
  • the orthographic projection of the piezoelectric element 52 on the display substrate may be located in the display area AA.
  • the thickness of the piezoelectric layer 62 may be less than or equal to 2 ⁇ m.
  • the transmittance of the film layer can be guaranteed to be above 70%, and the tactile reproduction device can be prepared by integrating with the display substrate.
  • both the first electrode 61 and the second electrode 63 may be transparent electrodes.
  • the materials of the first electrode 61 and the second electrode 63 can be transparent metal oxides such as indium tin oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO) and graphene oxide.
  • the thickness of the first electrode 61 and the second electrode 63 may be, for example, greater than or equal to 200 nm and less than or equal to 500 nm.
  • the first electrode 61 can use magnetron sputtering to deposit ITO transparent oxide, and then anneal at 250 degrees Celsius for 30 minutes under a nitrogen atmosphere to obtain a crystalline ITO film layer with a lower square resistance.
  • the piezoelectric layer 62 can be prepared by sol-gel or magnetron sputtering. Among them, the film growth rate of magnetron sputtering can be as high as 4 ⁇ m/h.
  • the preparation of the piezoelectric layer 62 can refer to the preparation process of the piezoelectric material, which will not be repeated here.
  • the second electrode 63 can use magnetron sputtering to deposit ITO transparent oxide, and then anneal at 250 degrees Celsius for 30 minutes under a nitrogen atmosphere to obtain a crystalline ITO film layer with a lower square resistance.
  • the orthographic projection of the piezoelectric element 52 on the display substrate is located in the non-display area BA.
  • the piezoelectric element 52 does not affect the transmittance in the display area AA. Therefore, in this implementation manner, the materials of the first electrode 61 and the second electrode 63 can be selected from metal materials with lower resistivity.
  • the material of the first electrode 61 and the second electrode 63 may include platinum. Platinum can improve the performance and reliability of the piezoelectric device due to its excellent electrical conductivity, high temperature thermal oxidation resistance, and adaptability of the lattice constant to the piezoelectric layer 62 .
  • the thickness of the piezoelectric layer 62 can be designed according to actual requirements. Generally, in order to ensure the quality of the film layer, the thickness of the piezoelectric layer 62 can be less than or equal to 10 ⁇ m.
  • the number of piezoelectric elements 52 can be multiple, and the plurality of piezoelectric elements 52 can be divided into two groups, and the piezoelectric elements 52 in each group are arranged along the first direction, and are respectively close to the two opposite sides of the substrate 51. Side setting.
  • first electrodes 61 of the piezoelectric elements 52 in each group may have an integral structure.
  • the second electrodes 63 of the piezoelectric elements 52 in each group can be arranged separately and connected to each other through lead wires.
  • the first electrode 61 may be grounded, and the second electrode 63 may be connected to an AC signal input terminal, which is used for inputting an AC signal.
  • the waveform of the AC signal can be a sine wave, a square wave, or a triangle wave.
  • the frequency of the AC signal may be equal to or close to the natural frequency of the substrate 51 .
  • the frequency of the AC signal is the frequency of the alternating electric field.
  • the substrate 51 When the substrate 51 is excited by a vibration signal close to its own natural frequency, it will resonate with the piezoelectric element 52 , as shown in FIG. 7 .
  • the frequency of the AC signal is 22.8KHz
  • the substrate 51 presents a vibration mode with 10nodes in the second direction, each node remains motionless (the amplitude is always 0), and the positions between the nodes vibrate up and down, forming peaks and troughs.
  • the displacement between the peak and the trough is greater than 1 micron, the finger slides on the touch surface, and the touch surface can be obviously felt smoother.
  • references herein to "one embodiment,” “an embodiment,” or “one or more embodiments” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Additionally, please note that examples of the word “in one embodiment” herein do not necessarily all refer to the same embodiment.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word “comprising” does not exclude the presence of elements or steps not listed in a claim.
  • the word “a” or “an” preceding an element does not exclude the presence of a plurality of such elements.
  • the disclosure can be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In a unit claim enumerating several means, several of these means can be embodied by one and the same item of hardware.
  • the use of the words first, second, and third, etc. does not indicate any order. These words can be interpreted as names.

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Abstract

压电材料及压电装置。压电材料包括：基材，所述基材的晶体结构为ABO 3型钙钛矿结构，所述钙钛矿结构包括共存的菱形结构和四方结构，所述基材位于准同型相界附近；掺杂元素，所述掺杂元素用于替换所述钙钛矿结构中的A位元素或者B位元素，或者填充所述钙钛矿结构中的间隙，所述掺杂元素用于增大所述菱形结构与所述四方结构的晶格常数之差。

Description

压电材料及压电装置 技术领域
本公开涉及压电技术领域，特别是涉及一种压电材料及压电装置。
背景技术
基于压电材料的触觉再现器件，可以通过压电材料层与基板产生的共振来调节基板表面摩擦力，从而在基板表面实现物体的纹理再现。
然而，受材料本征特性的影响，现有的压电材料的压电效应较小，限制了其在触控再现器件上的进一步广泛应用。
概述
本公开提供了一种压电材料，包括：
基材，所述基材的晶体结构为ABO 3型钙钛矿结构，所述钙钛矿结构包括共存的菱形结构和四方结构，所述基材位于准同型相界附近；以及，
掺杂元素，所述掺杂元素用于替换所述钙钛矿结构中的A位元素或者B位元素，或者填充所述钙钛矿结构中的间隙，所述掺杂元素用于增大所述菱形结构与所述四方结构的晶格常数之差。
在一种可选的实现方式中，所述基材为锆钛酸铅，所述锆钛酸铅中的锆钛比为52:48或者53:47。
在一种可选的实现方式中，所述掺杂元素用于替换所述钙钛矿结构中的A位元素，所述掺杂元素与所述A位元素在所述钙钛矿结构中的价态相同。
在一种可选的实现方式中，所述基材为锆钛酸铅，所述掺杂元素为钙。
在一种可选的实现方式中，所述掺杂元素在所述基材中的摩尔百分比小于或等于20％。
在一种可选的实现方式中，所述掺杂元素在所述基材中的摩尔百分比小于或等于10％。
在一种可选的实现方式中，所述掺杂元素用于替换所述钙钛矿结构中的B位元素，所述掺杂元素与所述B位元素在所述钙钛矿结构中的价态相同。
在一种可选的实现方式中，所述基材为锆钛酸铅，所述掺杂元素为锰。
在一种可选的实现方式中，所述掺杂元素用于填充所述钙钛矿结构中的间隙，所述掺杂元素的原子量小于或等于6。
在一种可选的实现方式中，所述基材为锆钛酸铅，所述掺杂元素包括以下至少之一：碳和硼。
本公开提供了一种压电装置，包括：基板，以及设置在所述基板一侧的压电元件，所述压电元件包括层叠设置在所述基板一侧的第一电极、压电层和第二电极，其中，所述压电层的材料包括任一实施例所述的压电材料。
在一种可选的实现方式中，所述基板为显示基板，所述显示基板包括显示区域以及位于所述显示区域外围的非显示区域，所述压电元件设置在所述显示基板的出光侧。
在一种可选的实现方式中，所述压电元件在所述显示基板上的正投影位于所述显示区域内，所述压电层的厚度小于或等于2μm，所述第一电极和所述第二电极均为透明电极。
在一种可选的实现方式中，所述第一电极和所述第二电极的厚度大于或等于200nm，且小于或等于500nm。
在一种可选的实现方式中，所述压电元件在所述显示基板上的正投影位于所述非显示区域内，所述压电元件的数量为多个，多个所述压电元件分为两组，各组中的压电元件沿第一方向排列，分别靠近所述基板相对的两个侧边设置。
在一种可选的实现方式中，所述第一电极和所述第二电极的材料均包括铂。
在一种可选的实现方式中，所述第一电极、所述压电层以及所述第二电极的膜层应力均大于或等于-300MPa，且小于或等于300MPa。
在一种可选的实现方式中，所述第一电极靠近所述基板设置，所述第二电极的边缘相对于所述压电层的边缘缩进，且缩进量大于或等于100μm，且小于或等于500μm。
在一种可选的实现方式中，所述第一电极接地，所述第二电极连接交流信号输入端，所述交流信号输入端用于输入交流信号，所述交流信号的频率等于所述基板的固有频率。
在一种可选的实现方式中，所述压电装置还包括触控层，所述触控层设置在所述压电元件靠近或背离所述基板的一侧。
上述说明仅是本公开技术方案的概述，为了能够更清楚了解本公开的技术手段，而可依照说明书的内容予以实施，并且为了让本公开的上述和其它目的、特征和优点能够更明显易懂，以下特举本公开的具体实施方式。
附图简述
为了更清楚地说明本公开实施例或相关技术中的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。需要说明的是，附图中的比例仅作为示意并不代表实际比例。
图1示出了本公开实施例提供的一种钙钛矿结构的晶胞图；
图2示出了本公开实施例提供的锆钛酸铅的相图；
图3示出了本公开实施例提供的晶格常数的变化趋势；
图4示出了本公开实施例提供的晶格应变的变化趋势；
图5示出了本公开实施例提供的一种压电装置的平面结构示意图；
图6示出了本公开实施例提供的一种压电装置的剖面结构示意图；
图7示出了本公开实施例提供的一种压电装置的振动示意图。
详细描述
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
本公开一实施例提供了一种压电材料，该压电材料包括：基材和掺杂元素。
其中，基材的晶体结构为ABO 3型钙钛矿结构，该钙钛矿结构包括共存的菱形结构和四方结构，基材位于准同型相界附近。
掺杂元素用于替换钙钛矿结构中的A位元素或者B位元素，或者填充钙钛矿结构中的间隙，掺杂元素用于增大菱形结构与四方结构的晶格常数之差。
参照图1，示出了一种钙钛矿结构的晶胞图。钙钛矿结构为八面体。ABO 3型钙钛矿结构的A位元素位于八面体的顶点，B位元素位于八面体的中心点，O位元素位于八面体的面心位置。
钙钛矿结构的压电和铁电性能可以通过取代掺杂或间隙掺杂来改变。其中，取代掺杂可以通过掺杂元素取代A位元素或者B位元素来实现。间隙掺杂可以通过将掺杂元素填充于钙钛矿结构中的间隙来实现。
在准同型相界(Morphotropic Phase Boundary，MPB)附近的基材是两相(对应两种晶体结构：菱形结构和四方结构)共存，两种晶体结构的能量接近，并且在外界条件发生变化时，比如施加电场或者应力，则发生两种晶体结构之间的相互转换，使得准同型相界附近的组分具有介电性和压电性的极大值。
在一种可选的实现方式中，基材为锆钛酸铅，本实施例对此不作限定。
在一种可选的实现方式中，掺杂元素为钙、碳或硼等元素，本实施例对此不作限定。
本实施例中，将以基材的材料为锆钛酸铅，掺杂元素为钙进行说明。
锆钛酸铅为ABO 3型钙钛矿结构。其中，A位为Pb 2+，B位为Zr 4+或Ti 4+。
参照图2示出了锆钛酸铅的相图。锆钛酸铅是锆酸铅(PbZrO 3)和钛酸铅(PbTiO 3)的固溶体。富含锆的成分为菱形结构，而富含钛的成分为四方结构。当锆钛酸铅中的锆钛比可以为52:48或者53:47时，锆钛酸铅位于准同型相界附近。
在不进行掺杂时，基材锆钛酸铅的成分位于准同型相界附近，为菱形结构和四方结构两相共存的状态。发明人发现，随着Ca 2+掺杂的增加，两相依然共存，也就是掺杂Ca 2+不会影响准同型相界区域的存在。
参照图3示出了随着Ca 2+含量的增加，Pb 1-xCa xZr 0.53Ti 0.47O 3的晶格常数变化。由图3可以看出，随着Ca 2+含量的增加，菱形结构的晶格常数a R不断增大，四方结构的短轴晶格常数a T也相应增大，但a T增速比a R慢，所以，菱形结构的晶格常数a R与四方结构的短轴晶格常数a T之差增大。另外，菱形结构的晶格常数a R不断增大，四方结构的长轴晶格常数c T逐渐减小，所以，菱形 结构的晶格常数a R与四方结构的长轴晶格常数c T之差也增大。因此，菱形结构的晶格常数a R与四方结构的晶格常数a T或c T之间的差值增大。
由于准同型相界附近的应变来源主要是四方相和菱形相之间的互相转变。参照图4示出了相变过程中所产生的晶格应变量。由图4可以看出，随着Ca 2+含量的增大，在四方相向菱形相转变的过程中，由于菱形结构的晶格常数(a R)与四方结构的晶格常数(a T或c T)之差增大，使得晶格应变量(a R-a T)/a T或者(a R-c T)/c T都相应增大。其中，(a R-a T)/a T表示四方相的短轴a T都转变为a R所产生的应变量，(a R-c T)/c T表示四方相的长轴c T都转变为a R所产生的应变量，实际晶格应变量介于二者之间。
由于掺杂Ca 2+不会影响准同型相界区域的存在，也就是Pb 1-xCa xZr 0.53Ti 0.47O 3仍然表现出菱形结构(菱形相)和四方结构(四方相)的共存，当施加电场时，菱形结构与四方结构之间很容易发生相结构的转变，当菱形结构与四方结构之间的晶格常数之差增大时，可以增大应变材料的晶格应变最大值。
因此，通过增大准同型相界成分附近的两相(即菱形相与四方相)之间的晶格常数差异，也就是增大相变前后的晶格常数差异，有利于产生大应变，从而提高本征应变最大值。
本实施例提供的压电材料，钙钛矿结构的基材中掺杂有掺杂元素，且处于准同型相界附近，位于准同型相界附近的材料在外界电场的作用下，很容易发生菱形结构与四方结构之间的相互转变。由于掺杂元素可以增大菱形结构与四方结构之间的晶格常数之差，因此，可以增大相变导致的晶格应变量，提高本征应变的最大值，增强压电材料的压电效应。通过提高压电材料的本征应变最大值，有利于提升压电器件的振幅，实现电能和机械能的有效转换，增大触感，提升触觉再现的效果。
本实施例提供的压电材料可以实现机械能和电能的相互转换，当压电材料受到机械压力或拉力时可以生成电荷，当材料处于电场中时会发生压缩或者拉伸的机械变形。因此，可以应用于驱动器和传感器等领域，如超声波探头、压力传感器、能量收集器、触觉再现、微流控和扬声器等。
本实施例提供的压电材料，可以采用溶胶凝胶、磁控溅射、化学气相沉积等方法制备。其中，溶胶凝胶法可以准确地控制膜层的成分和掺杂比例。
当基材的材料为锆钛酸铅时，在制备过程中，锆钛酸铅膜层需要在高温(＞550℃)和氧气气氛下快速退火30min，从而形成钙钛矿结晶相。在配置溶胶凝胶溶液或者制备磁控溅射靶材时可以加入小于20mol％(摩尔百分比20％)的过量Pb，且锆钛比为Zr/Ti＝52/48或者53/47，以使基材处于准同型相界附近。掺杂元素可以在配置溶胶凝胶溶液或者制备磁控溅射靶材时加入。
当掺杂元素在基材中的掺杂为取代掺杂时，掺杂元素与被取代元素可以为等价掺杂或非等价掺杂。其中，非等价掺杂即掺杂与被取代元素价位不同的离子，包括施主掺杂和受主掺杂，如La 3+取代Pb 2+等等。等价掺杂即掺杂与被取代元素价位相同的离子，比如Ca 2+取代Pb 2+等等。
发明人发现，在基材中进行非等价掺杂时，当施主元素或者受主元素的添加量过多时，容易导致离子失去平衡，正/负电荷量可能增加，在压电材料内部可能产生不均匀的内置电场，最终导致薄膜易被击穿。
为了解决离子失衡问题，在一种可选的实现方式中，掺杂元素用于替换钙钛矿结构中的A位元素，掺杂元素与A位元素在钙钛矿结构中的价态相同。这样，通过对A位元素进行等价的取代掺杂，可以不影响压电材料的漏电流和介电常数，避免因掺杂量过多而引发的离子失衡问题。
在具体实现中，当基材为锆钛酸铅时，A位元素为Pb 2+，取代A位的掺杂元素可以为钙，即用Ca 2+取代Pb 2+。
为了确保压电材料始终位于准同型相界附近，掺杂元素在基材中的摩尔百分比可以小于或等于20％。也就是，掺杂元素Ca 2+占(Pb 2+和Ca 2+)总量的摩尔百分数小于或等于20％。
在具体实现中，掺杂元素在基材中的摩尔百分比可以小于或等于10％，如图3和图4所示出的。
为了解决离子失衡问题，在另一种可选的实现方式中，掺杂元素用于替换钙钛矿结构中的B位元素，掺杂元素与B位元素在钙钛矿结构中的价相同。这样，通过对B位元素进行等价的取代掺杂，可以不影响压电材料的漏电流和介电常数，避免因掺杂量过多而引发的离子失衡问题。
在具体实现中，当基材为锆钛酸铅时，B位元素为Zr 4+或Ti 4+，取代B位的掺杂元素可以为锰，即用Mn 4+取代Zr 4+或Ti 4+。
在一种可选的实现方式中，掺杂元素用于填充钙钛矿结构中的间隙，掺 杂元素的原子量可以小于或等于6。
例如，当基材为锆钛酸铅时，间隙掺杂的掺杂元素可以包括以下至少之一：碳和硼。
本公开一实施例提供了一种压电装置，参照图5，该压电装置包括：基板51，以及设置在基板51一侧的压电元件52。参照图6，压电元件52包括层叠设置在基板51一侧的第一电极61、压电层62和第二电极63，其中，压电层62的材料可以包括上述任一实施例所述的压电材料。
其中，基板51可以为硅基，还可以为设置有热氧化层的硅基即SiO 2/Si(100)，基板51还可以为透明玻璃、显示基板等等，本实施例对此不作限定。
第一电极61的材料可以包括铂、金、铝以及铜等金属材料中的至少一种，还可以包括氧化铟锡(Indium Tin Oxide，ITO)、氧化铟锌(Indium Zinc Oxide，IZO)以及氧化石墨烯等透明金属氧化物中的至少一种，本实施例对此不作限定。
第二电极63的材料可以包括铂、金、铝以及铜等金属材料中的至少一种，还可以包括氧化铟锡(Indium Tin Oxide，ITO)、氧化铟锌(Indium Zinc Oxide，IZO)以及氧化石墨烯等透明金属氧化物中的至少一种，本实施例对此不作限定。
需要说明的是，本实施例对压电元件52的形状不作限定，可以为图5中示出的圆形，还可以为矩形、五边形、六边形等。
本实施例中，第一电极61与第二电极63用于形成交变电场，压电层62用于在交变电场的作用下发生振动，并带动基板51发生共振。
在交变电场的作用下，压电层62发生形变并产生振动信号，该振动信号的频率与交变电场的频率相同，当振动信号的频率接近或等于基板51的固有频率时，压电层62与基板51发生共振，振幅增强，产生触觉反馈信号，当手指触摸压电装置的表面时，可以明显感受到摩擦力的变化，因此，可以通过压电层62与基板51之间产生的共振来调节压电装置表面的摩擦力，从而实现物体的纹理再现。
本实施例提供的压电装置，由于压电材料的本征应变较大，因此可以提高压电层与基板发生共振的振幅，增大表面触感，提升触觉再现的效果。
在一种可选的实现方式中，本实施例提供的压电装置还可以包括触控层，触控层设置在压电元件52靠近或背离基板51的一侧。也就是，触控层可以设置在基板51与压电元件52之间，也可以设置在压电元件52背离基板51的一侧。通过设置触控层，可以使压电装置具备触控功能。
为了避免膜层断裂，第一电极61的膜层应力可以大于或等于-300MPa，且小于或等于300MPa，最大不超过400MPa。压电层62的膜层应力可以大于或等于-300MPa，且小于或等于300MPa，最大不超过400MP。第二电极63的膜层应力可以大于或等于-300MPa，且小于或等于300MPa，最大不超过400MP。这样，可以防止各膜层因应力过大而产生断裂或者基板51发生整体翘曲。
其中，各膜层的应力可以在膜层制作前后分别测试表面翘曲度，根据测得的表面翘曲度计算对应膜层的应力。
在具体实现中，第一电极61可以靠近基板51设置，如图6所示。
在一种可选的实现方式中，参照图6，第二电极63的边缘可以相对于压电层62的边缘缩进。也就是，第二电极63在基板51上的正投影边界相对于压电层62在基板51上的正投影边界缩进。这样，可以避免压电层62侧向刻蚀严重，进而导致第一电极61和第二电极63直接接触引起短路的问题。
第二电极63的边缘可以相对于压电层62的边缘缩进的缩进量可以大于或等于100μm，且小于或等于500μm。这样，既能避免第一电极61和第二电极63之间发生短路，又能增大压电层62的有效振动面积。
本实施例中提供的压电装置可以按照以下步骤进行制备：首先提供基板51；然后在基板51上依次形成第一电极材料层、压电材料层以及第二电极材料层；之后对第二电极材料层进行刻蚀，形成第二电极；之后对压电材料层进行刻蚀，形成压电层；最终得到如6示出的压电装置。
在具体实现中，压电层62和第二电极63的形状可以相同，参照图5和图6，第二电极63为直径8mm的圆形，第二电极63为直径9mm的圆形。由于第二电极63的边缘可以相对于压电层62的边缘缩进，因此压电层62比第二电极63略大一些，图6中第二电极63的边缘相对于压电层62的边缘缩进500μm。
参照图6，第二电极63在基板51上的正投影边界与基板51的边界之间 的距离可以为3mm。图5中基板51的尺寸为71mm*60mm。
本实施例中，如图5所示，基板51例如可以为显示基板，显示基板包括显示区域AA以及位于显示区域AA外围的非显示区域BA。由于基板51为显示基板，可以使压电装置具备显示功能。
压电元件52可以设置在显示基板的出光侧，本实施例对此不作限定。。
在一种可选的实现方式中，压电元件52在显示基板上的正投影可以位于显示区域AA内。为了不影响显示基板的透过率，压电层62的厚度可以小于或等于2μm。当压电层62的厚度小于或等于2μm时，可以保证膜层透过率在70％以上，可以与显示基板集成制备触觉再现器件。
为了不影响显示基板的透过率，第一电极61和第二电极63可以均为透明电极。第一电极61和第二电极63的材料可以为氧化铟锡(Indium Tin Oxide，ITO)、氧化铟锌(Indium Zinc Oxide，IZO)以及氧化石墨烯等为透明金属氧化物。
在具体实现中，第一电极61和第二电极63的厚度例如可以大于或等于200nm，且小于或等于500nm。
第一电极61可以使用磁控溅射沉积ITO透明氧化物，之后再250摄氏度，氮气气氛下退火30min，可以获得具有较低方阻值的结晶ITO膜层。
压电层62可以使用溶胶凝胶或者磁控溅射的方法进行制备。其中，磁控溅射的膜层生长速度可以高达4μm/h。压电层62的制备可以参照压电材料的制备过程，这里不再赘述。
第二电极63可以使用磁控溅射沉积ITO透明氧化物，之后再250摄氏度，氮气气氛下退火30min，可以获得具有较低方阻值的结晶ITO膜层。
在另一种可选的实现方式中，压电元件52在显示基板上的正投影位于非显示区域BA内。这样，压电元件52不会影响显示区域AA内的透过率。因此，本实现方式中，第一电极61和第二电极63的材料可以选用电阻率较低的金属材料。例如第一电极61和第二电极63的材料可以包括铂。铂因其优异的导电性、耐高温热氧化性以及晶格常数与压电层62的适配性，因此可以提高压电装置的性能和可靠性。
本实现方式中，压电层62的厚度可以根据实际需求进行设计，一般情况下，为了确保膜层质量，压电层62的厚度可以小于或等于10μm。
本实现方式中，压电元件52的数量可以为多个，多个压电元件52可以分为两组，各组中的压电元件52沿第一方向排列，分别靠近基板51相对的两个侧边设置。
需要说明的是，各组中的压电元件52的第一电极61可以是一体结构。各组中的压电元件52的第二电极63之间可以分立设置，并通过引线相互连接。
在具体实现中，如图6所示，第一电极61可以接地，第二电极63可以连接交流信号输入端，交流信号输入端用于输入交流信号。交流信号的波形可以为正弦波、方波或者三角波等。
交流信号的频率可以等于或接近基板51的固有频率。交流信号的频率即交变电场的频率。
基板51在受到与自身固有频率接近的振动信号激励时，会与压电元件52发生共振，如图7所示。当交流信号的频率为22.8KHz时，基板51在第二方向上呈现出具有10node的振动模态，每个node点保持不动(振幅始终是0)，node点之间的位置上下振动，形成波峰和波谷。当波峰和波谷之间的位移量大于1微米时，手指在触摸表面上滑动，可以明显感觉到触摸表面更光滑。压电层62的振幅越大，手指与触摸表面之间的空气膜被挤压的越厉害，摩擦力显著减小，触感愈加明显。因此，通过提高压电层62材料的本征应变最大值，有利于提升器件的整体振幅，实现优异的触觉反馈功能。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在 另外的相同要素。
以上对本公开所提供的一种压电材料及压电装置进行了详细介绍，本文中应用了具体个例对本公开的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本公开的方法及其核心思想；同时，对于本领域的一般技术人员，依据本公开的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本公开的限制。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由下面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。
本文中所称的“一个实施例”、“实施例”或者“一个或者多个实施例”意味着，结合实施例描述的特定特征、结构或者特性包括在本公开的至少一个实施例中。此外，请注意，这里“在一个实施例中”的词语例子不一定全指同一个实施例。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本公开的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。本公开可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
最后应说明的是：以上实施例仅用以说明本公开的技术方案，而非对其限制；尽管参照前述实施例对本公开进行了详细的说明，本领域的普通技术 人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本公开各实施例技术方案的精神和范围。

Claims (20)

  1. 一种压电材料，其中，包括：
    基材，所述基材的晶体结构为ABO 3型钙钛矿结构，所述钙钛矿结构包括共存的菱形结构和四方结构，所述基材位于准同型相界附近；以及，
    掺杂元素，所述掺杂元素用于替换所述钙钛矿结构中的A位元素或者B位元素，或者填充所述钙钛矿结构中的间隙，所述掺杂元素用于增大所述菱形结构与所述四方结构的晶格常数之差。
  2. 根据权利要求1所述的压电材料，其中，所述基材为锆钛酸铅，所述锆钛酸铅中的锆钛比为52:48或者53:47。
  3. 根据权利要求1或2所述的压电材料，其中，所述掺杂元素用于替换所述钙钛矿结构中的A位元素，所述掺杂元素与所述A位元素在所述钙钛矿结构中的价态相同。
  4. 根据权利要求3所述的压电材料，其中，所述基材为锆钛酸铅，所述掺杂元素为钙。
  5. 根据权利要求3所述的压电材料，其中，所述掺杂元素在所述基材中的摩尔百分比小于或等于20％。
  6. 根据权利要求5所述的压电材料，其中，所述掺杂元素在所述基材中的摩尔百分比小于或等于10％。
  7. 根据权利要求1或2所述的压电材料，其中，所述掺杂元素用于替换所述钙钛矿结构中的B位元素，所述掺杂元素与所述B位元素在所述钙钛矿结构中的价态相同。
  8. 根据权利要求7所述的压电材料，其中，所述基材为锆钛酸铅，所述掺杂元素为锰。
  9. 根据权利要求1或2所述的压电材料，其中，所述掺杂元素用于填充所述钙钛矿结构中的间隙，所述掺杂元素的原子量小于或等于6。
  10. 根据权利要求9所述的压电材料，其中，所述基材为锆钛酸铅，所述掺杂元素包括以下至少之一：碳和硼。
  11. 一种压电装置，其中，所述压电装置包括：基板，以及设置在所述基板一侧的压电元件，所述压电元件包括层叠设置在所述基板一侧的第一电 极、压电层和第二电极，其中，所述压电层的材料包括权利要求1至10任一项所述的压电材料。
  12. 根据权利要求11所述的压电元件，其中，所述基板为显示基板，所述显示基板包括显示区域以及位于所述显示区域外围的非显示区域，所述压电元件设置在所述显示基板的出光侧。
  13. 根据权利要求12所述的压电元件，其中，所述压电元件在所述显示基板上的正投影位于所述显示区域内，所述压电层的厚度小于或等于2μm，所述第一电极和所述第二电极均为透明电极。
  14. 根据权利要求13所述的压电元件，其中，所述第一电极和所述第二电极的厚度大于或等于200nm，且小于或等于500nm。
  15. 根据权利要求12所述的压电元件，其中，所述压电元件在所述显示基板上的正投影位于所述非显示区域内，所述压电元件的数量为多个，多个所述压电元件分为两组，各组中的压电元件沿第一方向排列，分别靠近所述基板相对的两个侧边设置。
  16. 根据权利要求15所述的压电元件，其中，所述第一电极和所述第二电极的材料均包括铂。
  17. 根据权利要求11至16任一项所述的压电元件，其中，所述第一电极、所述压电层以及所述第二电极的膜层应力均大于或等于-300MPa，且小于或等于300MPa。
  18. 根据权利要求11至16任一项所述的压电元件，其中，所述第一电极靠近所述基板设置，所述第二电极的边缘相对于所述压电层的边缘缩进，且缩进量大于或等于100μm，且小于或等于500μm。
  19. 根据权利要求11至16任一项所述的压电元件，其中，所述第一电极接地，所述第二电极连接交流信号输入端，所述交流信号输入端用于输入交流信号，所述交流信号的频率等于所述基板的固有频率。
  20. 根据权利要求11至16任一项所述的压电元件，其中，所述压电装置还包括触控层，所述触控层设置在所述压电元件靠近或背离所述基板的一侧。
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