CN104681711B - 超声波传感器及其制造方法 - Google Patents
超声波传感器及其制造方法 Download PDFInfo
- Publication number
- CN104681711B CN104681711B CN201410678969.4A CN201410678969A CN104681711B CN 104681711 B CN104681711 B CN 104681711B CN 201410678969 A CN201410678969 A CN 201410678969A CN 104681711 B CN104681711 B CN 104681711B
- Authority
- CN
- China
- Prior art keywords
- electrode
- material layer
- ultrasonic sensor
- piezoelectric material
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Laminated Bodies (AREA)
Abstract
Description
超声波传感器 | 100 |
第一压电材料层 | 10 |
第一电极 | 11 |
第一胶体层 | 12 |
基板 | 13 |
第二胶体层 | 14 |
第二电极 | 15 |
第二压电材料层 | 16 |
导电膜 | 17 |
缺口 | 102 |
步骤 | S201~S207 |
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410678969.4A CN104681711B (zh) | 2014-11-24 | 2014-11-24 | 超声波传感器及其制造方法 |
US14/555,722 US9793466B2 (en) | 2014-11-24 | 2014-11-28 | Ultrasonic sensor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410678969.4A CN104681711B (zh) | 2014-11-24 | 2014-11-24 | 超声波传感器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104681711A CN104681711A (zh) | 2015-06-03 |
CN104681711B true CN104681711B (zh) | 2017-06-06 |
Family
ID=53316509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410678969.4A Expired - Fee Related CN104681711B (zh) | 2014-11-24 | 2014-11-24 | 超声波传感器及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9793466B2 (zh) |
CN (1) | CN104681711B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6834289B2 (ja) * | 2016-09-21 | 2021-02-24 | セイコーエプソン株式会社 | 実装構造体、超音波デバイス、超音波探触子、超音波装置、及び電子機器 |
CN109492470B (zh) * | 2017-09-12 | 2023-02-03 | 江西欧迈斯微电子有限公司 | 超声波传感器及电子装置 |
CN108846318B (zh) * | 2018-05-24 | 2021-08-31 | 业泓科技(成都)有限公司 | 超声波指纹识别装置及其制作方法以及应用其的电子装置 |
CN109344586B (zh) * | 2018-10-24 | 2021-04-06 | Oppo广东移动通信有限公司 | 解锁方法、装置、存储介质及移动终端 |
CN112387571A (zh) * | 2019-08-15 | 2021-02-23 | 欧菲光集团股份有限公司 | 超声波换能器及其车载雷达、汽车、手电筒、移动终端 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4656384A (en) | 1984-10-25 | 1987-04-07 | Siemens Aktiengesellschaft | Ultrasonic detection sensor in hybrid structure with appertaining electronic circuit |
JP2000165993A (ja) * | 1998-11-30 | 2000-06-16 | Kyocera Corp | 圧電発音体素子 |
KR100722370B1 (ko) * | 2005-02-22 | 2007-05-29 | 주식회사 휴먼스캔 | 적층형 초음파 탐촉자 및 이의 제조방법 |
US8618910B2 (en) * | 2009-08-07 | 2013-12-31 | Authentec, Inc. | Finger biometric sensor including laterally adjacent piezoelectric transducer layer and associated methods |
KR101320138B1 (ko) * | 2011-11-30 | 2013-10-23 | 삼성전기주식회사 | 지문 인식 센서 및 그 제조 방법 |
CN102683573A (zh) * | 2012-05-09 | 2012-09-19 | 纳米新能源(唐山)有限责任公司 | 纳米发电机、纳米发电机组及其自供电系统 |
US8890853B2 (en) * | 2013-01-11 | 2014-11-18 | Sharp Laboratories Of America, Inc. | In-pixel ultrasonic touch sensor for display applications |
CN103111410A (zh) * | 2013-01-25 | 2013-05-22 | 常州波速传感器有限公司 | 新型超声波传感器 |
CN105814420B (zh) * | 2013-12-27 | 2018-02-09 | 株式会社村田制作所 | 压电传感器、触摸面板 |
-
2014
- 2014-11-24 CN CN201410678969.4A patent/CN104681711B/zh not_active Expired - Fee Related
- 2014-11-28 US US14/555,722 patent/US9793466B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104681711A (zh) | 2015-06-03 |
US20160149117A1 (en) | 2016-05-26 |
US9793466B2 (en) | 2017-10-17 |
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TR01 | Transfer of patent right |
Effective date of registration: 20180822 Address after: No. 689, cooperative road, hi-tech West District, Chengdu, Sichuan Co-patentee after: Interface Optoelectronic (Shenzhen) Co., Ltd. Patentee after: Cheng Cheng Technology (Chengdu) Co., Ltd. Address before: Corvette Trust Services, 30 Castro Street, Vickhansky 1, Lodetown, Tortola, British Virgin Islands Patentee before: Mike thinks Intelligence Capital incorporated company |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170606 Termination date: 20201124 |
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CF01 | Termination of patent right due to non-payment of annual fee |