WO2022259448A1 - 半導体レーザおよびその製造方法 - Google Patents

半導体レーザおよびその製造方法 Download PDF

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Publication number
WO2022259448A1
WO2022259448A1 PCT/JP2021/022054 JP2021022054W WO2022259448A1 WO 2022259448 A1 WO2022259448 A1 WO 2022259448A1 JP 2021022054 W JP2021022054 W JP 2021022054W WO 2022259448 A1 WO2022259448 A1 WO 2022259448A1
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Prior art keywords
layer
diffraction grating
semiconductor laser
clad layer
optical coupling
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PCT/JP2021/022054
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English (en)
French (fr)
Japanese (ja)
Inventor
卓磨 相原
慎治 松尾
達郎 開
泰 土澤
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NTT Inc
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Nippon Telegraph and Telephone Corp
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Priority to JP2023526743A priority Critical patent/JP7709640B2/ja
Priority to PCT/JP2021/022054 priority patent/WO2022259448A1/ja
Publication of WO2022259448A1 publication Critical patent/WO2022259448A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Definitions

  • the present invention relates to a semiconductor laser and its manufacturing method.
  • a diffraction grating with a ⁇ /4 phase shift has been used as a typical structure of an optical resonator for single mode.
  • the phase is inverted by a phase shifter formed in a part of the diffraction grating provided in the resonator to enable single-mode oscillation at the Bragg wavelength.
  • This laser is called a ⁇ /4 shift DFB (Distributed Feedback) laser and has already been put to practical use. Further, in order to extend the transmission distance and expand the transmission capacity, the DFB laser is required to have a high optical output and a narrow line width.
  • Lengthening the DFB laser is effective for increasing the optical output power and narrowing the line width of the DFB laser.
  • the lengthening of DFB lasers is limited by the following two problems.
  • the oscillation mode becomes unstable due to the effect of spatial hole burning.
  • the light is strongly localized in the phase shift region. In this localized region of strong light, many carriers are consumed, so the carrier density is lowered.
  • a phenomenon in which a carrier distribution is generated in the cavity due to the light intensity distribution in the laser is called spatial hole burning.
  • a change in carrier density results in a change in refractive index.
  • a distribution occurs in the refractive index inside the resonator.
  • the refractive index distribution leads to a decrease in the reflectance of the optical resonator and a decrease in mode selectivity, and the oscillation mode of the laser becomes unstable.
  • a diffraction grating is formed by forming periodic unevenness in a part of an active layer made of a III-V group compound semiconductor that constitutes a semiconductor laser (see Non-Patent Document 1). If the change in this unevenness is small, the coupling coefficient of the diffraction grating will decrease.
  • the formation of the diffraction grating requires extremely fine processing, and there is a limit to how small the change in unevenness can be. In other words, there is a limit to how much the coupling coefficient can be reduced, and accordingly there is a limit to how long the DFB laser can be made.
  • the change in the unevenness of the diffraction grating for a coupling coefficient of 20 cm ⁇ 1 is extremely small, 5 nm or less, and is obviously difficult to manufacture.
  • lengthening the DFB laser is effective for increasing the optical output power and narrowing the line width of the DFB laser, but it is said that the lengthening of the DFB laser cannot be easily implemented with the conventional technology. I had a problem.
  • the present invention has been made in order to solve the above-described problems, and an object of the present invention is to facilitate the lengthening of the DFB laser.
  • a semiconductor laser comprises: a first clad layer formed on a substrate; an active layer formed on the first clad layer in a core shape extending in a waveguide direction; a p-type semiconductor layer and an n-type semiconductor layer formed in contact with the active layer; a second cladding layer formed on the active layer; and a diffraction grating in the resonator, the diffraction grating being formed on the first clad layer side or the second clad layer side of the resonator and between the resonator core and It is formed apart from the boundary region with the first clad layer or the second clad layer.
  • a semiconductor laser manufacturing method is the above-described semiconductor laser manufacturing method, wherein the thickness of the layer between the diffraction grating and the resonator is controlled so that the difference between the diffraction grating and the resonator is reduced. Control spacing.
  • the diffraction grating is formed away from the boundary region between the resonator core and the first clad layer or the second clad layer, the length of the DFB laser can be easily increased. be able to implement.
  • FIG. 1 is a cross-sectional view showing the configuration of a semiconductor laser according to an embodiment of the invention.
  • FIG. 2A is a cross-sectional view showing the configuration of a conventional DFB laser.
  • FIG. 2B is a cross-sectional view showing the configuration of a conventional DFB laser.
  • FIG. 3A is a characteristic diagram showing the calculation result of the coupling coefficient of the diffraction grating in the conventional DFB laser explained using FIG. 2A.
  • FIG. 3B is a characteristic diagram showing the calculation result of the coupling coefficient of the diffraction grating in the conventional DFB laser explained using FIG. 2B.
  • FIG. 3C is a characteristic diagram showing calculation results of the coupling coefficient of the diffraction grating in the semiconductor laser according to the embodiment of the invention.
  • FIG. 4A is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the invention.
  • FIG. 4B is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the invention.
  • FIG. 4C is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the present invention;
  • FIG. 4D is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the present invention;
  • FIG. 4E is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the present invention;
  • FIG. 4A is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the invention.
  • FIG. 4B is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the invention.
  • FIG. 4C is a cross-sectional view showing the configuration of another semiconductor laser according to the embodiment of the present invention.
  • FIG. 4D is a cross-sectional view showing the configuration of another semiconductor
  • FIG. 5A is a characteristic diagram showing calculation results of a coupling coefficient of a diffraction grating in a structure having an optical coupling layer in which grooves are formed directly on the upper surface of the optical coupling layer to form the diffraction grating.
  • FIG. 5B is a characteristic diagram showing calculation results of a coupling coefficient of a diffraction grating in a structure having an optical coupling layer in which grooves are formed directly on the side surface of the optical coupling layer to form the diffraction grating.
  • FIG. 5C is a characteristic diagram showing calculation results of the coupling coefficient of the diffraction grating 110d in the structure having the optical coupling layer 111.
  • FIG. 6A is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6B is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6C is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6D is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6A is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6B is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present
  • FIG. 6E is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • FIG. 6F is a cross-sectional view showing the state of the semiconductor laser in an intermediate process for explaining the method of manufacturing the semiconductor laser according to the embodiment of the present invention.
  • This semiconductor laser is a DFB (Distributed Feedback) laser comprising an active layer 103 formed in a core shape extending in the waveguide direction on a substrate 101 and having a diffraction grating 110 in the resonator.
  • DFB Distributed Feedback
  • This semiconductor laser first has a first clad layer 102 formed on a substrate 101 and an active layer 103 on the first clad layer 102 .
  • the substrate 101 is made of Si, for example, and the first clad layer 102 is made of silicon oxide, for example. It also has a p-type semiconductor layer 104 and an n-type semiconductor layer 105 formed in contact with the active layer 103 with the active layer 103 interposed therebetween. It also includes a second clad layer 106 formed on the active layer 103 , and a p-electrode 107 and an n-electrode 108 connected to the p-type semiconductor layer 104 and the n-type semiconductor layer 105 .
  • the p-type semiconductor layer 104 and the n-type semiconductor layer 105 are formed by introducing impurities into the semiconductor layer 121 made of InP, for example. Also, the active layer 103 is embedded in the semiconductor layer 121 between the p-type semiconductor layer 104 and the n-type semiconductor layer 105 .
  • the semiconductor laser according to the embodiment has the diffraction grating 110 formed on the first clad layer 102 side or the second clad layer 106 side of the resonator, and It is formed away from the boundary region with the first clad layer 102 or the second clad layer 106 .
  • the diffraction grating 110 is arranged in the first clad layer 102 or the second clad layer 106 in the thickness direction (stacking direction).
  • the diffraction grating 110 is formed on the side of the second clad layer 106 of the resonator and is formed away from the boundary region between the active layer 103 and the first clad layer 102, which is the core of the resonator.
  • a boundary region is, for example, a region between the second clad layer 106 and the active layer 103 .
  • a conventional DFB laser is a lateral current injection type DFB laser having substantially the same configuration as the semiconductor laser described with reference to FIG. 1 (see Non-Patent Document 1).
  • the intracavity diffraction grating 310 is formed in the boundary region between the active layer 103 and the second clad layer 106 .
  • diffraction grating 310 is formed at the interface between semiconductor layer 121 and second clad layer 106 .
  • the diffraction grating 310 is composed of periodic grooves arranged in the waveguide direction formed in the semiconductor layer 121 above the active layer 103 .
  • FIG. 2B there is also a configuration in which periodic grooves are formed in a SiN layer formed on and in contact with the semiconductor layer 121 to form a diffraction grating 310a.
  • FIG. 3A, FIG. 3B, and FIG. 3C show the calculation results of the coupling coefficient of each diffraction grating in each semiconductor laser (DFB laser) described above.
  • FIG. 3A shows calculation results for the conventional DFB laser described with reference to FIG. 2A.
  • FIG. 3B shows calculation results for the conventional DFB laser described with reference to FIG. 2B.
  • FIG. 3C shows calculation results for the semiconductor laser according to the embodiment described with reference to FIG.
  • the coupling coefficient (kappa) is It becomes a large value of 360 cm -1 .
  • the DFB length is about 50 ⁇ m, and high light output and narrow line width cannot be realized.
  • the thickness of the silicon nitride layer corresponds to the groove depth of the diffraction grating 310a .
  • the DFB length is limited to about 240 ⁇ m, and similarly high optical output and narrow line width cannot be expected.
  • FIG. 3C a smaller coupling coefficient can be achieved as shown in FIG. 3C.
  • the horizontal axis represents the spatial gap between the active layer 103 and the diffraction grating 110 .
  • the coupling coefficient decreases while approaching 0 cm ⁇ 1 .
  • the DFB length can be 10 mm. With this length, a much higher optical output and a narrower line width than ever before can be expected.
  • FIGS. 4A, 4B, 4C, 4D and 4E are sequential semiconductor laser according to an embodiment of the present invention.
  • an optical coupling layer 111 formed in a core shape extending along the active layer 103 is embedded in the first clad layer 102 so as to be optically coupled with the active layer 103.
  • the diffraction grating 110 is embedded in the second clad layer 106 on the side where the optical coupling layer 111 is not formed.
  • the diffraction grating 110a can be formed by being embedded in the first clad layer 102 on the side where the optical coupling layer 111 is formed.
  • diffraction grating 110 a is formed between active layer 103 and optical coupling layer 111 .
  • the diffraction grating 110a is placed away from the boundary region between both the optical coupling layer 111 and the active layer 103 (resonator) and the clad layer.
  • a boundary region between the optical coupling layer 111 and the clad layer serves as an interface between the optical coupling layer 111 and the clad layer.
  • the diffraction grating 110b can be formed by being embedded in the second clad layer 106 on the side where the optical coupling layer 111 is formed. Also in this example, the diffraction grating 110 b is formed between the active layer 103 and the optical coupling layer 111 .
  • the diffraction grating 110c is embedded in the first cladding layer 102 on the side where the optical coupling layer 111 is formed, and the diffraction grating 110b is formed by It can be formed on the side where the active layer 103 is not formed.
  • the diffraction grating 110d is embedded in the second clad layer 106 on the side where the optical coupling layer 111a is formed, and the diffraction grating 110d is viewed from the optical coupling layer 111a. It can be formed on the side where the layer 103 is not formed.
  • the diffraction grating 110, the diffraction grating 110a, the diffraction grating 110b, the diffraction grating 110c, and the diffraction grating 110d can be formed to have the same width as the optical coupling layer 111 in the waveguide direction.
  • the optical coupling layer 111 As described above, by providing the optical coupling layer 111, the active layer 103 and the optical coupling layer 111 are combined to form a super mode as a waveguide mode (reference). Therefore, by adjusting the width and thickness of the optical coupling layer 111, the optical confinement in the active layer 103, the p-type semiconductor layer 104, and the n-type semiconductor layer 105 can be freely adjusted.
  • the optical coupling layer 111 when the width of the optical coupling layer 111 is widened and the effective refractive index of the optical waveguide formed of the optical coupling layer 111 is increased relative to the optical waveguide (gain waveguide) formed of the active layer 103, the optical coupling layer 111 Optical confinement in the optical waveguide increases, while optical confinement in the active layer 103, the p-type semiconductor layer 104, and the n-type semiconductor layer 105 decreases. This is known to be effective in reducing the absorption loss of light and increasing the external quantum efficiency as compared with a semiconductor laser without the optical coupling layer 111 (reference).
  • FIG. 5A shows the result of forming a diffraction grating by forming grooves directly on the upper surface of the optical coupling layer instead of the configuration of the semiconductor laser according to the embodiment.
  • FIG. 5C shows the result of forming a diffraction grating by forming grooves directly on the side surface of the optical coupling layer instead of the configuration of the semiconductor laser according to the embodiment.
  • FIG. 5C is the calculation result of the structure having the optical coupling layer 111a described with reference to FIG. 4E.
  • the diffraction grating 110d is arranged at a location away from the interface (boundary region) between the optical coupling layer 111a and the second clad layer 106. Therefore, it can be seen that a relatively low coupling coefficient can be realized by increasing the distance between the boundary region and the diffraction grating 110d. That is, the same effect as described above can be obtained in a DFB laser forming a supermode waveguide.
  • FIGS. 6A to 6F a method for manufacturing a semiconductor laser according to an embodiment of the present invention will be described with reference to FIGS. 6A to 6F.
  • the manufacturing method will be described below using the semiconductor laser described with reference to FIG. 4E as an example.
  • a first clad layer 102 made of, for example, silicon oxide (SiO 2 ) is formed on a substrate 101 made of Si.
  • the first clad layer 102 can be formed by thermally oxidizing the surface of the substrate 101 made of Si.
  • an active layer 103 and a p-type semiconductor layer 104 are buried in the semiconductor layer 121 with, for example, a III-V group semiconductor such as InP. , and an n-type semiconductor layer 105 (reference).
  • the active layer 103 can have, for example, a multiple quantum well structure.
  • a first dielectric layer 131, an optical coupling layer forming layer 132, a second dielectric layer 133, and a diffraction grating forming layer 134 are sequentially formed on the semiconductor layer 121.
  • the first dielectric layer 131 and the second dielectric layer 133 can be made of SiO2
  • the optical coupling layer forming layer 132 and the diffraction grating forming layer 134 can be made of SiN.
  • film formation is performed under low temperature conditions of 500° C. or less so as not to destroy already formed III-V compound semiconductor layers such as the semiconductor layer 121 and the active layer 103 .
  • ECR electron cyclotron resonance
  • deuterated silane can be used as a raw material gas for film formation.
  • a SiN layer that suppresses light absorption in the communication wavelength band can be formed.
  • any one of the first dielectric layer 131, the optical coupling layer forming layer 132, the second dielectric layer 133, and the diffraction grating forming layer 134 can be formed by a sputtering method if the thickness is 100 nm or less. can.
  • a mask pattern for forming a diffraction grating is formed on the diffraction grating forming layer 134 by a known lithography technique, and the diffraction grating forming layer 134 is etched by dry etching using this mask pattern.
  • a grating layer 135 is formed on the second dielectric layer 133, as shown in FIG. 6D.
  • the second dielectric layer 133 may be partially overetched from the upper surface in the thickness direction.
  • the diffraction grating layer 135 is embedded with a layer of the same material as the second dielectric layer 133, the problem of overetching described above is avoided.
  • the groove depth of the diffraction grating will be larger than the design value, and the formed diffraction grating will have a larger coupling coefficient than designed, making it difficult to form a diffraction grating with a low coupling coefficient. becomes.
  • the depth of the grooves of the diffraction grating is determined by the thickness of the diffraction grating forming layer, and the problem that the groove depth changes due to overetching can be avoided. is.
  • a grating 110d and an optical coupling layer 111a are formed to form a mesa with a second dielectric layer 133a sandwiched therebetween.
  • a mesa-shaped mask pattern is formed on the diffraction grating layer 135 by lithography, and the above-described layers are collectively dry-etched and processed using this mask pattern to obtain the state shown in FIG. 6E. can.
  • a second clad layer 106 is formed.
  • the deposited layer of dielectric material, the second dielectric layer 133 a and the first dielectric layer 131 a are integrated to form the second cladding layer 106 .
  • each electrode is formed to obtain the semiconductor laser shown in FIG. 4E.
  • the distance between the optical coupling layer 111 a and the diffraction grating 110 d in the thickness direction and the groove depth of the diffraction grating 110 d can be determined (controlled) by the thickness of the second dielectric layer 133 and the diffraction grating forming layer 134 .
  • the second dielectric layer 133 is a layer between the diffraction grating 110d and the resonator, and by controlling the thickness of this layer, the distance between the diffraction grating 110d and the resonator can be controlled.
  • the embodiment it is possible to manufacture a semiconductor laser using a diffraction grating with high precision and low coupling coefficient.
  • the refractive indices of the first dielectric layer 131, the optical coupling layer forming layer 132, the second dielectric layer 133, and the diffraction grating forming layer 134 can also control the coupling coefficient of the diffraction grating.
  • the refractive index can be controlled by the flow rate of the source gas containing nitrogen and oxygen, increasing the degree of freedom in controlling the coupling coefficient.
  • the diffraction grating is formed away from the boundary region between the resonator core and the first clad layer or the second clad layer, and the first clad layer or the second clad layer , the coupling coefficient of the diffraction grating can be lowered more easily, and the length of the DFB laser can be easily increased.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2021/022054 2021-06-10 2021-06-10 半導体レーザおよびその製造方法 Ceased WO2022259448A1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025037387A1 (ja) * 2023-08-15 2025-02-20 日本電信電話株式会社 半導体レーザ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165027A (ja) * 2004-12-02 2006-06-22 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2006330104A (ja) * 2005-05-23 2006-12-07 Nippon Telegr & Teleph Corp <Ntt> 導波路型フィルタおよびそれを用いた半導体レーザ素子
US20130003771A1 (en) * 2011-07-01 2013-01-03 Electronics And Telecommunications Research Institute Distributed feedback laser diode having asymmetric coupling coefficient and manufacturing method thereof
WO2020145128A1 (ja) * 2019-01-08 2020-07-16 日本電信電話株式会社 半導体光素子
WO2021005700A1 (ja) * 2019-07-09 2021-01-14 日本電信電話株式会社 半導体光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315600B2 (ja) 2015-03-12 2018-04-25 日本電信電話株式会社 半導体光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165027A (ja) * 2004-12-02 2006-06-22 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2006330104A (ja) * 2005-05-23 2006-12-07 Nippon Telegr & Teleph Corp <Ntt> 導波路型フィルタおよびそれを用いた半導体レーザ素子
US20130003771A1 (en) * 2011-07-01 2013-01-03 Electronics And Telecommunications Research Institute Distributed feedback laser diode having asymmetric coupling coefficient and manufacturing method thereof
WO2020145128A1 (ja) * 2019-01-08 2020-07-16 日本電信電話株式会社 半導体光素子
WO2021005700A1 (ja) * 2019-07-09 2021-01-14 日本電信電話株式会社 半導体光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025037387A1 (ja) * 2023-08-15 2025-02-20 日本電信電話株式会社 半導体レーザ

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