JP7709640B2 - 半導体レーザ - Google Patents

半導体レーザ

Info

Publication number
JP7709640B2
JP7709640B2 JP2023526743A JP2023526743A JP7709640B2 JP 7709640 B2 JP7709640 B2 JP 7709640B2 JP 2023526743 A JP2023526743 A JP 2023526743A JP 2023526743 A JP2023526743 A JP 2023526743A JP 7709640 B2 JP7709640 B2 JP 7709640B2
Authority
JP
Japan
Prior art keywords
layer
diffraction grating
semiconductor laser
cladding
optical coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023526743A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022259448A1 (https=
Inventor
卓磨 相原
慎治 松尾
達郎 開
泰 土澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc USA filed Critical Nippon Telegraph and Telephone Corp
Publication of JPWO2022259448A1 publication Critical patent/JPWO2022259448A1/ja
Application granted granted Critical
Publication of JP7709640B2 publication Critical patent/JP7709640B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2023526743A 2021-06-10 2021-06-10 半導体レーザ Active JP7709640B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/022054 WO2022259448A1 (ja) 2021-06-10 2021-06-10 半導体レーザおよびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2022259448A1 JPWO2022259448A1 (https=) 2022-12-15
JP7709640B2 true JP7709640B2 (ja) 2025-07-17

Family

ID=84426005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023526743A Active JP7709640B2 (ja) 2021-06-10 2021-06-10 半導体レーザ

Country Status (2)

Country Link
JP (1) JP7709640B2 (https=)
WO (1) WO2022259448A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025037387A1 (ja) * 2023-08-15 2025-02-20 日本電信電話株式会社 半導体レーザ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171173A (ja) 2015-03-12 2016-09-23 日本電信電話株式会社 半導体光素子
WO2020145128A1 (ja) 2019-01-08 2020-07-16 日本電信電話株式会社 半導体光素子
WO2021005700A1 (ja) 2019-07-09 2021-01-14 日本電信電話株式会社 半導体光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4422597B2 (ja) * 2004-12-02 2010-02-24 富士通株式会社 半導体レーザ及びその製造方法
JP2006330104A (ja) * 2005-05-23 2006-12-07 Nippon Telegr & Teleph Corp <Ntt> 導波路型フィルタおよびそれを用いた半導体レーザ素子
KR20130003913A (ko) * 2011-07-01 2013-01-09 한국전자통신연구원 비대칭 결합계수를 갖는 분포 궤환형 레이저 다이오드 및 그것의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016171173A (ja) 2015-03-12 2016-09-23 日本電信電話株式会社 半導体光素子
WO2020145128A1 (ja) 2019-01-08 2020-07-16 日本電信電話株式会社 半導体光素子
WO2021005700A1 (ja) 2019-07-09 2021-01-14 日本電信電話株式会社 半導体光素子

Also Published As

Publication number Publication date
JPWO2022259448A1 (https=) 2022-12-15
WO2022259448A1 (ja) 2022-12-15

Similar Documents

Publication Publication Date Title
JP5239898B2 (ja) 波長可変レーザ
US5208183A (en) Method of making a semiconductor laser
US8457452B2 (en) Integrated semiconductor optical device
JP2011204895A (ja) 半導体レーザ装置
WO2009116140A1 (ja) 光半導体素子及びその製造方法
WO1997014201A1 (en) Optical filters
JP2018006440A (ja) 半導体レーザ
US8472760B2 (en) Integrated semiconductor optical device
US12027818B2 (en) Semiconductor laser
JP2000269587A (ja) 光半導体装置及びその製造方法
JP7709640B2 (ja) 半導体レーザ
CN107623250A (zh) 一种短腔长面发射激光器及其制造方法
JPH0548214A (ja) 分布反射型半導体レーザ
JP7159844B2 (ja) 半導体レーザ
JP4447222B2 (ja) 分布帰還型半導体レーザ
US20020146050A1 (en) Semiconductor laser device
WO2022211061A1 (ja) 波長可変レーザ
JP2950297B2 (ja) 分布帰還型半導体レーザ及びその製造方法
JP7813855B2 (ja) 構造的複屈折共振器によるｖｃｓｅｌ偏光制御
JP2011205012A (ja) 半導体発光素子、半導体発光素子を作製する方法
US11777274B2 (en) Semiconductor optical device and method for manufacturing the same
JPH06196798A (ja) 分布帰還型半導体レーザおよびその製造方法
JP7827214B2 (ja) 半導体レーザ、半導体レーザの回折格子層の設計方法および半導体レーザの製造方法
JP2012033975A (ja) 半導体レーザの作製方法
JP2001345512A (ja) 分布帰還型レーザダイオード

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241015

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250121

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250324

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250603

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250616

R150 Certificate of patent or registration of utility model

Ref document number: 7709640

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150