WO2022239345A1 - Élément d'imagerie, dispositif d'imagerie et procédé de fabrication d'élément d'imagerie - Google Patents

Élément d'imagerie, dispositif d'imagerie et procédé de fabrication d'élément d'imagerie Download PDF

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Publication number
WO2022239345A1
WO2022239345A1 PCT/JP2022/006008 JP2022006008W WO2022239345A1 WO 2022239345 A1 WO2022239345 A1 WO 2022239345A1 JP 2022006008 W JP2022006008 W JP 2022006008W WO 2022239345 A1 WO2022239345 A1 WO 2022239345A1
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Prior art keywords
photoelectric conversion
imaging device
conversion element
unit
switch
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PCT/JP2022/006008
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English (en)
Japanese (ja)
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武裕 大谷
智彦 柴田
武 松木
伸 北野
祐喜 小澤
Original Assignee
ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2022239345A1 publication Critical patent/WO2022239345A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Definitions

  • the present disclosure relates to an image pickup device, an image pickup device, and an image pickup device control method.
  • an asynchronous image pickup device solid-state image pickup device
  • This imaging device is a sensor that has a function of detecting a change in the light amount of a photodiode (PD) and outputting it as an event signal, and is called an EVS (Event-based Vision Sensor), for example.
  • EVS Event-based Vision Sensor
  • a stacked EVS has been developed, and the stacked EVS is configured by bonding an upper chip and a lower chip.
  • FIG. 7 is a diagram showing part of the schematic configuration of the pixel circuit shown in FIG. 6;
  • FIG. FIG. 4 is a first diagram for explaining an application example of a switch to a pixel array section according to an embodiment of the present disclosure;
  • FIG. 7 is a second diagram for explaining an application example of the switch to the pixel array section according to the embodiment of the present disclosure;
  • FIG. 10 is a diagram showing part of a schematic configuration of a pixel circuit according to Modification 1;
  • FIG. 10 is a diagram showing a part of a schematic configuration of a pixel circuit according to Modification 2;
  • FIG. 11 is a diagram showing a part of a schematic configuration of a pixel circuit according to Modification 3;
  • Embodiment 1-1 Configuration example of imaging device 1-2.
  • Configuration example of imaging device 1-3 Configuration example of pixel 1-4.
  • Configuration example of pixel circuit 1-5 Operation example of supply unit 1-6.
  • Application example of switch for each pixel in pixel array section 1-7 Modification of pixel circuit 1-8. Action and effect 2.
  • Other Embodiments 3.
  • Application example 4 Supplementary note
  • FIG. 1 is a diagram showing an example of a schematic configuration of an imaging device 100 according to this embodiment.
  • the imaging device 100 includes an imaging lens 110, an imaging element (solid-state imaging element) 200, a recording section 120, and a control section .
  • Examples of the imaging device 100 include a camera mounted on a wearable device, an industrial robot, and the like, and an in-vehicle camera mounted on a car and the like.
  • the imaging element 200 photoelectrically converts incident light, detects the presence or absence of an event (address event), and generates the detection result. For example, the imaging device 200 detects, as an event, that the absolute value of the amount of change in luminance exceeds a threshold for each of a plurality of pixels.
  • This imaging device 200 is also called an EVS (Event-based Vision Sensor).
  • events include on-events and off-events
  • detection results include 1-bit on-event detection results and 1-bit off-event detection results.
  • An on-event means, for example, that the amount of change in the amount of incident light (the amount of increase in luminance) exceeds a predetermined upper threshold.
  • an off event means, for example, that the amount of change in the amount of incident light (the amount of decrease in luminance) has fallen below a predetermined lower threshold (a value less than the upper threshold).
  • the imaging device 200 processes the detection result of the event (address event) and outputs data indicating the processing result to the recording unit 120 via the signal line 209 .
  • the imaging device 200 generates a detection signal (event signal) indicating the detection result of an event for each pixel.
  • Each detection signal includes an on-event detection signal indicating presence/absence of an on-event and an off-event detection signal indicating presence/absence of an off-event. Note that the imaging device 200 may detect only one of the on-event detection signal and the off-event detection signal.
  • the image sensor 200 executes predetermined signal processing such as image recognition processing on image data composed of detection signals, and outputs the processed data to the recording unit 120 via the signal line 209 .
  • the imaging element 200 may output at least data based on the event detection result. For example, if the image data is unnecessary in subsequent processing, a configuration may be adopted in which the image data is not output.
  • the recording unit 120 records data input from the imaging device 200 .
  • storage such as flash memory, DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory) is used.
  • the control unit 130 controls each unit of the imaging device 100 by outputting various instructions to the imaging device 200 via the signal line 139 .
  • the control unit 130 controls the imaging device 200 and causes the imaging device 200 to detect the presence or absence of an event (address event).
  • a computer such as a CPU (Central Processing Unit) or MCU (Micro Control Unit) is used.
  • FIG. 2 is a diagram showing an example of the layered structure of the imaging element 200 according to this embodiment.
  • FIG. 3 is a diagram showing an example of a schematic configuration of the imaging device 200 according to this embodiment.
  • the imaging device 200 includes a light receiving chip (light receiving substrate) 201 and a detection chip (detection substrate) 202 .
  • the light receiving chip 201 is stacked on the detection chip 202 .
  • the light receiving chip 201 corresponds to the first chip
  • the detection chip 202 corresponds to the second chip.
  • the light-receiving chip 201 is provided with a light-receiving element (for example, a photoelectric conversion element such as a photodiode), and the detection chip 202 is provided with a circuit.
  • the light-receiving chip 201 and the detection chip 202 are electrically connected through connecting portions such as vias, Cu--Cu junctions, and bumps.
  • the imaging device 200 includes a pixel array section 12, a driving section 13, an arbiter section (arbitration section) 14, a column processing section 15, and a signal processing section 16.
  • the drive section 13 , arbiter section 14 , column processing section 15 and signal processing section 16 are provided as a peripheral circuit section of the pixel array section 12 .
  • the pixel array section 12 has a plurality of pixels 11 . These pixels 11 are two-dimensionally arranged in an array, for example, in a matrix. A pixel address indicating the position of each pixel 11 is defined by a row address and a column address based on the matrix arrangement of the pixels 11 . Each pixel 11 generates, as a pixel signal, an analog signal having a voltage corresponding to a photocurrent as an electrical signal generated by photoelectric conversion. Further, each pixel 11 detects the presence or absence of an event depending on whether or not a change exceeding a predetermined threshold occurs in the photocurrent corresponding to the luminance of incident light. In other words, each pixel 11 detects as an event that the luminance change exceeds a predetermined threshold.
  • each pixel 11 When each pixel 11 detects an event, it outputs a request to the arbiter unit 14 requesting output of event data representing the occurrence of the event. Then, each of the pixels 11 outputs the event data to the drive unit 13 and the signal processing unit 16 when receiving a response indicating permission to output the event data from the arbiter unit 14 . Also, the pixels 11 that have detected the event output analog pixel signals generated by photoelectric conversion to the column processing unit 15 .
  • the driving section 13 drives each pixel 11 of the pixel array section 12 .
  • the drive unit 13 detects an event, drives the pixel 11 that outputs the event data, and outputs an analog pixel signal of the pixel 11 to the column processing unit 15 .
  • the arbiter unit 14 arbitrates requests requesting output of event data supplied from each of the plurality of pixels 11, and responds based on the arbitration result (permission/non-permission of event data output) and event detection. A reset signal for resetting is transmitted to the pixel 11 .
  • the column processing unit 15 performs a process of converting analog pixel signals output from the pixels 11 in each column of the pixel array unit 12 into digital signals.
  • the column processing unit 15 can also perform CDS (Correlated Double Sampling) processing on digitized pixel signals.
  • the column processing section 15 has, for example, an analog-to-digital converter made up of a set of analog-to-digital converters provided for each pixel column of the pixel array section 12 .
  • an analog-digital converter for example, a single-slope analog-digital converter can be exemplified.
  • the change in the photocurrent generated by the pixel 11 can be understood as the change in the amount of light (luminance change) incident on the pixel 11 . Therefore, it can be said that the occurrence of an event is a change in light amount (luminance change) of the pixel 11 exceeding a predetermined threshold.
  • the event data representing the occurrence of an event includes, for example, positional information such as coordinates representing the position of the pixel 11 where the change in the amount of light has occurred as an event.
  • the event data can include the polarity of the change in the amount of light in addition to the positional information.
  • FIG. 4 is a diagram showing an example of a schematic configuration of the pixel 11 according to this embodiment.
  • each pixel 11 has a light receiving section 61, a pixel signal generating section 62, and an event detecting section 63.
  • the light receiving unit 61 photoelectrically converts incident light to generate a photocurrent. Then, under the control of the drive unit 13 (see FIG. 3), the light receiving unit 61 outputs a voltage corresponding to the photocurrent generated by photoelectrically converting the incident light to either the pixel signal generation unit 62 or the event detection unit 63. provide a signal.
  • the pixel signal generation unit 62 generates a voltage signal corresponding to the photocurrent supplied from the light receiving unit 61 as an analog pixel signal SIG. Then, the pixel signal generation unit 62 supplies the generated analog pixel signal SIG to the column processing unit 15 (see FIG. 3) via the vertical signal line VSL wired for each pixel column of the pixel array unit 12 .
  • the event detection unit 63 detects whether an event has occurred, depending on whether the amount of change in photocurrent from each of the light receiving units 61 has exceeded a predetermined threshold.
  • the events include, for example, an ON event indicating that the amount of change in photocurrent has exceeded the upper limit threshold, and an OFF event indicating that the amount of change has fallen below the lower limit threshold.
  • the event data representing the occurrence of an event consists of, for example, 1 bit indicating the detection result of an on-event and 1 bit indicating the detection result of an off-event. Note that the event detection unit 63 may be configured to detect only on-events.
  • the configuration of the pixel 11 exemplified here is an example, and the configuration is not limited to this example.
  • a pixel configuration without the pixel signal generator 62 may be employed.
  • By adopting a pixel configuration that does not output a pixel signal it is possible to reduce the scale of the imaging device 200 .
  • the event detection section 63 When an event occurs, the event detection section 63 outputs a request to the arbiter section 14 (see FIG. 3) requesting output of event data representing the occurrence of the event. When receiving a response to the request from the arbiter unit 14 , the event detection unit 63 outputs event data to the drive unit 13 and the signal processing unit 16 .
  • the present invention is not limited to this.
  • a plurality of pixels 11 eg, four pixels 11
  • the pixel signal generator 62 and event detector 63 may be provided for each pixel block.
  • the pixel signal generator 62 and the event detector 63 are common to the pixels 11 in the pixel block.
  • FIG. 5 and 6 are diagrams each showing an example of a schematic configuration of the pixel circuit 301 according to this embodiment.
  • the pixel circuit 301 has a current-voltage conversion section 310, a buffer 320, a differentiation circuit 330, a comparator 340, and a transfer section 350. These current-voltage conversion section 310 , buffer 320 , differentiating circuit 330 , comparator 340 and transfer section 350 function as an event detection section 63 .
  • the pixel circuit 301 also includes the light receiving section 61, the pixel signal generating section 62, and the like.
  • the current-voltage converter 310 logarithmically converts a photocurrent into a pixel voltage Vp. For example, the photocurrent is converted into a pixel voltage Vp proportional to the logarithm of the photocurrent.
  • the current-voltage converter 310 supplies the pixel voltage Vp to the buffer 320 .
  • the buffer 320 outputs the pixel voltage Vp from the current-voltage converter 310 to the differentiating circuit 330 .
  • This buffer 320 can ensure impedance isolation before and after the buffer. Also, the buffer 320 can ensure noise isolation associated with the switching operation in the latter stage.
  • the differentiating circuit 330 obtains the amount of change in the pixel voltage Vp by differential calculation.
  • the amount of change in the pixel voltage Vp indicates the amount of change in the amount of light.
  • the differentiating circuit 330 supplies the comparator 340 with a differential signal Vout that indicates the amount of change in the amount of light.
  • the comparator 340 compares the differentiated signal Vout with a predetermined threshold (upper threshold or lower threshold).
  • the comparison result COMP of this comparator 340 indicates the detection result of the event (address event).
  • the comparator 340 supplies the comparison result COMP to the transfer section 350 .
  • the transfer unit 350 transfers the detection signal DET, and after transfer, supplies the auto-zero signal XAZ to the differentiating circuit 330 for initialization.
  • the transfer unit 350 supplies the arbiter unit 14 with a request to transfer the detection signal DET when an event is detected.
  • the transfer section 350 Upon receiving a response to the request, the transfer section 350 supplies the comparison result COMP as the detection signal DET to the signal processing section 16 and supplies the auto-zero signal XAZ to the differentiating circuit 330 .
  • the light receiving section 61 has a photoelectric conversion element 311 .
  • the photoelectric conversion element 311 generates photocurrent by photoelectric conversion of incident light.
  • a photodiode (FD), for example, is used as the photoelectric conversion element 311 .
  • the current-voltage conversion section 310 includes an N-type transistor 312 , a supply section 313 , a P-type transistor 314 and an N-type transistor 315 .
  • the supply unit 313 has a switch (first switch) 313a.
  • MOS Metal-Oxide-Semiconductor
  • the photoelectric conversion element 311, the N-type transistor 312, and the N-type transistor 315 are arranged in the light receiving chip 201, and the other switches 313a, P-type transistor 314, and subsequent circuits (buffer 320, differentiating circuit 330, comparator 340), etc. are placed on the detection chip 202 .
  • the light receiving chip 201 and the detection chip 202 are electrically connected by, for example, Cu--Cu bonding (CCC).
  • CCC Cu--Cu bonding
  • the source of the N-type transistor 312 is connected to the photoelectric conversion element 311, and the drain is connected to the power supply terminal via the switch 313a.
  • the P-type transistor 314 and N-type transistor 315 are connected in series between a power supply terminal and a reference terminal of a predetermined reference potential (ground potential, etc.).
  • the source of the P-type transistor 314 and the drain of the N-type transistor 315 are connected to the gate of the N-type transistor 312 and the input terminal of the buffer 320 .
  • a connection point between the N-type transistor 312 and the photoelectric conversion element 311 is connected to the gate of the N-type transistor 315 .
  • the N-type transistor 312 and the N-type transistor 315 are connected in a loop.
  • a predetermined bias voltage is applied to the gate of the P-type transistor 314 .
  • the supply unit 313 switches the path through which the current flows to the photoelectric conversion element 311 using the switch 313 a , and applies a potential Vsw (eg, ground potential) that disables the operations of the photoelectric conversion element 311 and the N-type transistor 312 to the N-type transistor 312 . give to the drain (node).
  • the switch 313 a is an element for switching the path through which the current flows through the photoelectric conversion element 311 .
  • the switch 313a is formed so as to switch between the connection between the drain of the N-type transistor 312 and the power supply terminal and the connection between the drain of the N-type transistor 312 and the Vsw terminal.
  • the operation of the switch 313a is controlled by the controller 130, for example.
  • the buffer 320 includes a P-type transistor 321 and a P-type transistor 322 .
  • MOS transistors are used as these transistors.
  • the P-type transistor 321 and the P-type transistor 322 are connected in series between the power supply terminal and the reference potential terminal.
  • the gate of the P-type transistor 322 is connected to the current-voltage converter 310 , and the connection point between the P-type transistors 321 and 322 is connected to the differentiating circuit 330 .
  • a predetermined bias voltage Vbsf is applied to the gate of the P-type transistor 321 .
  • the differentiating circuit 330 includes a capacitor 331 , a P-type transistor 332 , a P-type transistor 333 , a capacitor 334 and an N-type transistor 335 .
  • a MOS transistor for example, is used as the transistor in the differentiating circuit 330 .
  • the P-type transistor 333 and the N-type transistor 335 are connected in series between the power supply terminal and the reference potential terminal.
  • a predetermined bias voltage Vbdiff is input to the gate of the N-type transistor 335 .
  • These transistors function as an inverting circuit having the gate of the P-type transistor 333 as an input terminal 391 and the connection point between the P-type transistor 333 and the N-type transistor 335 as an output terminal 392 .
  • a capacitor 331 is inserted between the buffer 320 and the input terminal 391 .
  • the capacitor 331 supplies the input terminal 391 with a current corresponding to the time differentiation (in other words, the amount of change) of the pixel voltage Vp from the buffer 320 .
  • the capacitor 334 is inserted between the input terminal 391 and the output terminal 392 .
  • the P-type transistor 332 opens and closes the path between the input terminal 391 and the output terminal 392 according to the auto-zero signal XAZ from the transfer section 350 . For example, when a low-level auto-zero signal XAZ is input, the P-type transistor 332 transitions to an ON state according to the auto-zero signal XAZ and initializes the differential signal Vout.
  • the comparator 340 includes a P-type transistor 341 , an N-type transistor 342 , a P-type transistor 343 and an N-type transistor 344 .
  • MOS transistors are used as these transistors.
  • P-type transistor 341 and N-type transistor 342 are connected in series between the power supply terminal and the reference terminal, and P-type transistor 343 and N-type transistor 344 are also connected in series between the power supply terminal and the reference terminal. .
  • Gates of the P-type transistor 341 and the P-type transistor 343 are connected to the differentiating circuit 330 .
  • An upper voltage Vhigh indicating an upper threshold is applied to the gate of the N-type transistor 342
  • a lower voltage Vlow indicating a lower threshold is applied to the gate of the N-type transistor 344 .
  • a connection point between the P-type transistor 341 and the N-type transistor 342 is connected to the transfer section 350, and the voltage at this connection point is output as the comparison result COMP+ with the upper limit threshold.
  • a connection point between the P-type transistor 343 and the N-type transistor 344 is also connected to the transfer section 350, and the voltage at this connection point is output as the comparison result COMP- with the lower limit threshold.
  • the upper threshold is determined by the current driving capabilities of the P-type transistor 341 and the N-type transistor 342, respectively, and the lower threshold is determined by the current driving capabilities of the P-type transistor 343 and the N-type transistor 344, respectively.
  • the comparison result COMP is a signal composed of these comparison results COMP+ and COMP-.
  • the comparator 340 compares both the upper limit threshold and the lower limit threshold with the differentiated signal Vout, only one of them may be compared with the differentiated signal Vout. In this case, unnecessary transistors can be eliminated. For example, when comparing only with the upper threshold, only the P-type transistor 341 and the N-type transistor 342 are arranged.
  • a capacitor may be added to the current-voltage converter 310. This capacitance is inserted, for example, between the gate of the N-type transistor 312 and the gate of the N-type transistor 315 .
  • the capacitor 334 may be reduced.
  • the buffer 320 may be removed from the pixel circuit 301 . In this manner, various elements, circuits, and the like can be added to the pixel circuit 301 and various elements, circuits, and the like can be deleted from the pixel circuit 301 .
  • FIG. 7 is a diagram showing part of the schematic configuration of the pixel circuit 301 shown in FIG. 6 according to this embodiment.
  • the switch 313a is switched to connect the drain of the N-type transistor 312 to the Vsw terminal.
  • the drain of the N-type transistor 312 is connected to the Vsw terminal by the switch 313a.
  • the potential Vsw eg, ground potential or the like
  • the operations of the photoelectric conversion element 311 and the N-type transistor 312 are disabled.
  • the switch 313a is switched, and the drain of the N-type transistor 312 is connected to the power supply terminal by the switch 313a (Fig. 6).
  • the power supply potential VDD is applied to the drain of the N-type transistor 312, and the photoelectric conversion element 311 and the N-type transistor 312 can operate (normal operation).
  • the switch 313a is switched according to the control by the control unit 130.
  • the control unit 130 may switch the switch 313a according to an operator's input operation to an input unit (not shown).
  • an operator such as an evaluator can switch the switch 313a as necessary.
  • the control unit 130 automatically performs characteristic evaluation, it is possible to automatically switch the switch 313a at the timing when the control unit 130 performs characteristic evaluation.
  • FIG. 8 and 9 are diagrams for explaining application examples of the switch 313a for each pixel of the pixel array section 12 according to the present embodiment.
  • the switch 313a is applied to all effective pixels of the pixel array section 12, that is, the pixels 11 used for imaging. This switch 313a is provided for each effective pixel. In the example of FIG. 8, effective pixels are provided over the entire surface of the pixel array section 12 .
  • a switch 313a is applied to some of the test pixels in the pixel array section 12, that is, the pixels 11 that are not used for imaging.
  • This switch 313a is provided for each test pixel.
  • the test pixels are provided in one row at the end of the pixel array section 12 (lower end in FIG. 9).
  • the test pixels may be provided, for example, at the ends such as the upper end, the left end, and the right end in FIG. 9, or may be provided in a plurality of columns. may be provided in
  • the supply unit 313, that is, the switch 313a shown in FIG. 7 may be applied to either the effective pixels or the test pixels. However, depending on the position where the switch 313a is provided with respect to the current-voltage converter 310, it may be preferable to provide it in the test pixel.
  • the switch 313a is provided for each pixel 11 such as an effective pixel or a test pixel, but is not limited to this.
  • the switch 313a may be provided for each pixel block (specific area) having a plurality of pixels 11, or only one switch 313a may be provided for all pixels 11 (entire area).
  • FIGS. 10 to 21 are diagrams showing a part of the schematic configuration of the pixel circuit 301 according to the modified examples (modified examples 1 to 12), respectively.
  • switch 313a may be provided in light-receiving chip 201, unlike the configuration shown in FIG.
  • the configuration shown in FIG. 10 may be applied to either effective pixels or test pixels.
  • a switch 313b may be provided in addition to the configuration according to Modification 1 (see FIG. 10).
  • the supply unit 313 has a switch (first switch) 313a and a switch (second switch) 313b.
  • the switch 313b is an element for switching a path through which a current flows through the photoelectric conversion element 311, and switches a potential Vsw2 (for example, a ground potential) that disables the operation of the photoelectric conversion element 311 to the cathode (node) of the photoelectric conversion element 311.
  • Vsw2 for example, a ground potential
  • This switch 313b is formed so as to be able to switch between connection and disconnection of the cathode of the photoelectric conversion element 311 and the Vsw2 terminal.
  • the operations of the switches 313a and 313b are controlled by the control unit 130, for example.
  • the switches 313a and 313b are switched, the drain of the N-type transistor 312 is connected to the Vsw1 terminal, and the cathode of the photoelectric conversion element 311 is connected to the Vsw2 terminal.
  • the potential Vsw1 for example, ground potential
  • the potential Vsw2 for example, ground potential
  • the potential Vsw2 is directly applied to the cathode of the photoelectric conversion element 311, so that the operation of the photoelectric conversion element 311 can be reliably disabled. can.
  • the configuration shown in FIG. 11 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels. Since the addition of the switch 313b increases the leakage path of the pixel current, if the configuration shown in FIG. 11, that is, the switch 313a and the switch 313b are applied to the effective pixels, there is a concern that the characteristics of the image sensor 200 will deteriorate. In order to suppress this characteristic deterioration, it is preferable to apply the switches 313a and 313b to the test pixels.
  • a fixing portion 317 may be provided in addition to the configuration according to Modification 2 (see FIG. 11).
  • the configuration shown in FIG. 12 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels. The reason for this is the same as the reason described above, so the explanation thereof is omitted (the same applies hereinafter).
  • the fixing unit 317 fixes the output potential from the light receiving chip 201 to the detection chip 202 at a predetermined potential.
  • the fixed part 317 has a switch (third switch) 317a.
  • the switch 317a is an element for fixing the output potential to a predetermined potential, and the potential Vsw3 (for example, a predetermined potential required for characteristic evaluation) is applied to the drain (node) of the P-type transistor 314, that is, the buffer 320 (see FIG. 6). ) to the input terminal (node).
  • This switch 317a is formed so as to be able to switch between connection and disconnection of the drain of the P-type transistor 314 and the Vsw3 terminal.
  • the operation of the switch 317a is controlled by the controller 130, for example.
  • the switches 313a and 313b are switched to disable the photoelectric conversion element 311 and the N-type transistor 312 as in the second modification. Furthermore, the switch 317a is turned on, and the source of the P-type transistor 314 is connected to the Vsw3 terminal. As a result, the potential Vsw3 (for example, a predetermined potential required for characteristic evaluation) is applied to the drain of the P-type transistor 314, that is, the input terminal of the buffer 320, and the output potential from the light receiving chip 201 to the detection chip 202 reaches a predetermined potential. Fixed. At this time, the output potential from the light receiving chip 201 to the detecting chip 202 is stabilized by being fixed at a predetermined potential as compared with the modification 2 (see FIG. 11). The characteristics of the detection chip 202 alone can be evaluated with high accuracy.
  • Vsw3 for example, a predetermined potential required for characteristic evaluation
  • the switch 317a may be provided in the light-receiving chip 201, unlike the modification 3 (see FIG. 12).
  • the configuration shown in FIG. 13 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • a switching unit 318 may be provided in addition to the configuration according to Modification 2 (see FIG. 11).
  • the configuration shown in FIG. 14 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the switching unit 318 switches the electrical connection between the light receiving chip 201 and the detecting chip 202 (output connection from the light receiving chip 201 to the detecting chip 202) between a disconnected state and a connected state.
  • the switching unit 318 has a switch (fourth switch) 318a.
  • the switch 318 a is an element for switching the output connection between a disconnected state and a connected state, and is provided between the connection point of the N-type transistor 312 and the N-type transistor 315 and the drain of the P-type transistor 314 .
  • the switch 318 a is formed so as to be capable of switching connection and disconnection between the connection point of the N-type transistor 312 and the N-type transistor 315 and the drain of the P-type transistor 314 .
  • the operation of the switch 318a is controlled by the controller 130, for example.
  • the switches 313a and 313b are switched to disable the photoelectric conversion element 311 and the N-type transistor 312 as in the second modification. Furthermore, the switch 318a is turned off (disconnected state), and the connection point between the N-type transistor 312 and the N-type transistor 315 and the drain of the P-type transistor 314 are disconnected. As a result, the electrical connection between the light receiving chip 201 and the detection chip 202 is cut off. At this time, the electrical connection between the light-receiving chip 201 and the detection chip 202 is cut off compared to the modification 2 (see FIG. 11). can be accurately evaluated.
  • the switch 318a may be provided in the light-receiving chip 201, unlike the fifth modification (see FIG. 14).
  • the configuration shown in FIG. 15 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the P-type transistor 314 may be provided in the light-receiving chip 201, unlike the sixth modification (see FIG. 15).
  • the configuration shown in FIG. 16 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • Modification 8 As shown in FIG. 17, modification 3 (see FIG. 12) and modification 5 (see FIG. 14) may be combined. Thereby, the effects of Modifications 3 and 5 can be obtained.
  • the configuration shown in FIG. 17 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the switch 318a may be provided in the light-receiving chip 201, unlike the eighth modification (see FIG. 17).
  • the configuration shown in FIG. 18 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the P-type transistor 314 may be provided in the light-receiving chip 201, unlike the ninth modification (see FIG. 18).
  • the configuration shown in FIG. 19 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the switch 317a may be provided in the light receiving chip 201, unlike the ninth modification (see FIG. 18).
  • the configuration shown in FIG. 20 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • the P-type transistor 314 and the switch 318a may be provided in the light receiving chip 201, unlike the ninth modification (see FIG. 18).
  • the configuration shown in FIG. 21 may be applied to either effective pixels or test pixels, but is preferably applied to test pixels.
  • a light receiving substrate for example, a light chip 201 and a detection substrate (for example, a detection substrate (for example, A detection chip 202) and a supply unit 313 for applying a potential to disable the operation of the photoelectric conversion element 311 or the first element to the node of the photoelectric conversion element 311 or the node of the first element are provided.
  • a potential that disables the operation of the photoelectric conversion element 311 or the first element to the node of the photoelectric conversion element 311 or the node of the first element
  • the influence of the light receiving substrate can be separated in the imaging element 200.
  • the characteristics of the detection substrate alone can be evaluated. Therefore, when analyzing a characteristic problem in characteristic evaluation, it is possible to determine whether the cause of an abnormality (for example, the cause of a defect, etc.) that cannot solve the characteristic problem is due to the light receiving substrate or the detection substrate. can facilitate identification.
  • the supply unit 313 also includes a first switch 313a for switching the path through which the current flows to the photoelectric conversion element 311 and for applying a potential that disables the operation of the first element to the node of the first element. good too.
  • a potential that disables the operation of the first element to the node of the first element it is possible to reliably separate the influence of the light receiving substrate in the imaging element 200. Evaluation can be performed with high accuracy.
  • the supply unit 313 can be realized with a simple configuration.
  • the first switch 313a may be provided on the detection substrate. Thereby, the degree of freedom in design can be improved.
  • the first switch 313a may be provided on the light receiving substrate. Thereby, the degree of freedom in design can be improved.
  • the supply unit 313 has a second switch 313b for switching the path through which the current flows to the photoelectric conversion element 311 and for applying a potential that disables the operation of the photoelectric conversion element 311 to the node of the photoelectric conversion element 311. good too.
  • a potential that disables the operation of the photoelectric conversion element 311 to the node of the photoelectric conversion element 311 it is possible to reliably separate the influence of the light receiving substrate in the imaging device 200, and the detection substrate alone can be isolated. Characteristic evaluation can be performed with high accuracy.
  • the supply unit 313 can be realized with a simple configuration.
  • a fixing portion 317 may be provided for fixing the output potential from the light receiving substrate to the detection substrate to a predetermined potential.
  • the output potential from the light-receiving substrate to the detection substrate is fixed at a predetermined potential, so that the influence of the light-receiving substrate can be separated in the imaging device 200, and the characteristics of the detection substrate alone can be evaluated more accurately.
  • the fixing section 317 may have a third switch 317a for fixing the output potential from the light receiving substrate to the detection substrate to a predetermined potential. Accordingly, the fixing portion 317 can be realized with a simple configuration.
  • the third switch 317a may be provided on the detection substrate. As a result, it is possible to improve the degree of freedom in designing the light-receiving substrate.
  • the third switch 317a may be provided on the light receiving substrate. As a result, the degree of freedom in designing the detection substrate can be improved.
  • a switching unit 318 may be provided for switching the electrical connection between the light receiving substrate and the detection substrate between a disconnected state and a connected state. As a result, the electrical connection between the light-receiving substrate and the detection substrate is disconnected, so that the characteristics of the detection substrate alone can be evaluated more accurately while separating the influence of the light-receiving substrate in the imaging device 200 .
  • the switching section 318 may have a fourth switch 318a for switching the electrical connection between the light receiving substrate and the detection substrate between the disconnected state and the connected state.
  • the switching unit 318 can be realized with a simple configuration.
  • the fourth switch 318a may be provided on the detection substrate. As a result, it is possible to improve the degree of freedom in designing the light-receiving substrate.
  • the fourth switch 318a may be provided on the light receiving substrate. As a result, the degree of freedom in designing the detection substrate can be improved.
  • the event detection unit 63 also includes a current-voltage conversion unit 310 that converts the current output from the photoelectric conversion element 311 into a voltage. type transistor 314, N-type transistor 315, etc.). As a result, the event detector 63 can be realized with a simple configuration.
  • part of each transistor may be provided on the detection substrate. As a result, it is possible to improve the degree of freedom in designing the light-receiving substrate.
  • all of the transistors may be provided on the light receiving substrate. As a result, the degree of freedom in designing the detection substrate can be improved.
  • a pixel array portion 12 having a plurality of pixels 11 arranged in an array (for example, matrix) is provided.
  • Each pixel 11 has a photoelectric conversion element 311, a first element, and a plurality of elements. 11 may be divided into active pixels and test pixels, and the feed section 313 may be provided in the test pixels. As a result, it is possible to prevent the supply unit 313 from adversely affecting the effective pixels, so deterioration of the characteristics of the image sensor 200 can be suppressed.
  • a pixel array portion 12 having a plurality of pixels 11 arranged in an array (for example, matrix) is provided.
  • Each pixel 11 has a photoelectric conversion element 311, a first element, and a plurality of elements.
  • 11 may be divided into a plurality of pixel blocks each containing a predetermined number (eg, four, etc.) of pixels 11, and the supply unit 313 may be provided for each pixel block. Accordingly, the device configuration can be simplified as compared with the case where the supply unit 313 is provided for each pixel 11 .
  • each component of each device illustrated is functionally conceptual and does not necessarily need to be physically configured as illustrated.
  • the specific form of distribution and integration of each device is not limited to the one shown in the figure, and all or part of them can be functionally or physically distributed and integrated in arbitrary units according to various loads and usage conditions. Can be integrated and configured.
  • a color filter may be provided for each pixel 11 .
  • the imaging device 200 can detect an event in a specific wavelength band based on color filters. As a result, information in various wavelength bands can be detected as events.
  • a color filter is an example of an optical filter that transmits predetermined light. Arbitrary light can be received as incident light by providing this color filter in the pixel 11 .
  • the event data represents the occurrence of a change in pixel value in an image showing a visible subject.
  • the event data indicates occurrence of a change in the distance to the subject.
  • the event data indicates the occurrence of a change in the temperature of the subject.
  • various color filters such as a 4 ⁇ 4 pixel quad Bayer array (also referred to as a quadra array), an 8 ⁇ 8 pixel array, and a 2 ⁇ 2 pixel Bayer array are used.
  • a color filter which is an example of a wavelength selection element, may be provided for each pixel 11 in the imaging device 200, and threshold detection may be performed for each pixel 11, thereby enabling event detection for each color.
  • event signals for each color in each wavelength band can be used to detect (detect) the lighting (blinking) of vehicle brake lights and tail lights, the blinking of direction indicators, the color changes of traffic lights, and the detection of electronic signs. can be done.
  • an RCCC filter in which R (red) pixels and C (clear) pixels are combined, or an RCCB filter in which B (blue) pixels are combined with R and C pixels.
  • a filter or an RGB Bayer array filter in which R pixels, G (green), and B pixels are combined may be used.
  • the C pixel is a pixel with no color filter or with a transparent filter, and is the same pixel as the W (white) pixel.
  • an RCCC filter that combines R (red) pixels and C (clear) pixels can realize high sensitivity capable of imaging distant obstacles and people even at low illumination equivalent to moonlit nights.
  • the RCCC filter can improve the detection accuracy of light in the red wavelength band (for example, tail lamps, red lights of traffic lights, etc.), which is important for in-vehicle sensing and the like.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure can be applied to any type of movement such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility, airplanes, drones, ships, robots, construction machinery, agricultural machinery (tractors), etc. It may also be implemented as a body-mounted device.
  • FIG. 22 is a block diagram showing a schematic configuration example of a vehicle control system 7000, which is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • Vehicle control system 7000 comprises a plurality of electronic control units connected via communication network 7010 .
  • the vehicle control system 7000 includes a drive system control unit 7100, a body system control unit 7200, a battery control unit 7300, an outside information detection unit 7400, an inside information detection unit 7500, and an integrated control unit 7600.
  • the communication network 7010 that connects these multiple control units conforms to any standard such as CAN (Controller Area Network), LIN (Local Interconnect Network), LAN (Local Area Network), or FlexRay (registered trademark). It may be an in-vehicle communication network.
  • Each control unit includes a microcomputer that performs arithmetic processing according to various programs, a storage unit that stores programs executed by the microcomputer or parameters used in various calculations, and a drive circuit that drives various devices to be controlled. Prepare.
  • Each control unit has a network I/F for communicating with other control units via a communication network 7010, and communicates with devices or sensors inside and outside the vehicle by wired communication or wireless communication. A communication I/F for communication is provided. In FIG.
  • the functional configuration of the integrated control unit 7600 includes a microcomputer 7610, a general-purpose communication I/F 7620, a dedicated communication I/F 7630, a positioning unit 7640, a beacon receiving unit 7650, an in-vehicle equipment I/F 7660, an audio image output unit 7670, An in-vehicle network I/F 7680 and a storage unit 7690 are shown.
  • Other control units are similarly provided with microcomputers, communication I/Fs, storage units, and the like.
  • the drive system control unit 7100 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the driving system control unit 7100 includes a driving force generator for generating driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism to adjust and a brake device to generate braking force of the vehicle.
  • the drive system control unit 7100 may have a function as a control device such as ABS (Antilock Brake System) or ESC (Electronic Stability Control).
  • a vehicle state detection section 7110 is connected to the drive system control unit 7100 .
  • the vehicle state detection unit 7110 includes, for example, a gyro sensor that detects the angular velocity of the axial rotational motion of the vehicle body, an acceleration sensor that detects the acceleration of the vehicle, an accelerator pedal operation amount, a brake pedal operation amount, and a steering wheel steering. At least one of sensors for detecting angle, engine speed or wheel rotation speed is included.
  • Drive system control unit 7100 performs arithmetic processing using signals input from vehicle state detection unit 7110, and controls the internal combustion engine, drive motor, electric power steering device, brake device, and the like.
  • the body system control unit 7200 controls the operation of various devices equipped on the vehicle body according to various programs.
  • the body system control unit 7200 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, winkers or fog lamps.
  • body system control unit 7200 can receive radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
  • Body system control unit 7200 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, etc. of the vehicle.
  • the battery control unit 7300 controls the secondary battery 7310, which is the power supply source for the driving motor, according to various programs. For example, the battery control unit 7300 receives information such as battery temperature, battery output voltage, or remaining battery capacity from a battery device including a secondary battery 7310 . The battery control unit 7300 performs arithmetic processing using these signals, and performs temperature adjustment control of the secondary battery 7310 or control of a cooling device provided in the battery device.
  • the vehicle exterior information detection unit 7400 detects information outside the vehicle in which the vehicle control system 7000 is installed.
  • the imaging section 7410 and the vehicle exterior information detection section 7420 is connected to the vehicle exterior information detection unit 7400 .
  • the imaging unit 7410 includes at least one of a ToF (Time Of Flight) camera, a stereo camera, a monocular camera, an infrared camera, and other cameras.
  • the vehicle exterior information detection unit 7420 includes, for example, an environment sensor for detecting the current weather or weather, or a sensor for detecting other vehicles, obstacles, pedestrians, etc. around the vehicle equipped with the vehicle control system 7000. ambient information detection sensor.
  • the environmental sensor may be, for example, at least one of a raindrop sensor that detects rainy weather, a fog sensor that detects fog, a sunshine sensor that detects the degree of sunshine, and a snow sensor that detects snowfall.
  • the ambient information detection sensor may be at least one of an ultrasonic sensor, a radar device, and a LIDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) device.
  • LIDAR Light Detection and Ranging, Laser Imaging Detection and Ranging
  • These imaging unit 7410 and vehicle exterior information detection unit 7420 may be provided as independent sensors or devices, or may be provided as a device in which a plurality of sensors or devices are integrated.
  • the vehicle exterior information detectors 7920, 7922, 7924, 7926, 7928, and 7930 provided on the front, rear, sides, corners, and above the windshield of the vehicle interior of the vehicle 7900 may be, for example, ultrasonic sensors or radar devices.
  • the exterior information detectors 7920, 7926, and 7930 provided above the front nose, rear bumper, back door, and windshield of the vehicle 7900 may be LIDAR devices, for example.
  • These vehicle exterior information detection units 7920 to 7930 are mainly used to detect preceding vehicles, pedestrians, obstacles, and the like.
  • the vehicle exterior information detection unit 7400 may perform image recognition processing or distance detection processing for recognizing people, vehicles, obstacles, signs, characters on the road surface, etc., based on the received image data.
  • the vehicle exterior information detection unit 7400 performs processing such as distortion correction or alignment on the received image data, and synthesizes image data captured by different imaging units 7410 to generate a bird's-eye view image or a panoramic image. good too.
  • the vehicle exterior information detection unit 7400 may perform viewpoint conversion processing using image data captured by different imaging units 7410 .
  • the in-vehicle information detection unit 7500 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 7510, and determine whether the driver is dozing off. You may The in-vehicle information detection unit 7500 may perform processing such as noise canceling processing on the collected sound signal.
  • the input section 7800 may include an input control circuit that generates an input signal based on information input by the passenger or the like using the input section 7800 and outputs the signal to the integrated control unit 7600, for example.
  • a passenger or the like operates the input unit 7800 to input various data to the vehicle control system 7000 and instruct processing operations.
  • the in-vehicle network I/F 7680 is an interface that mediates communication between the microcomputer 7610 and the communication network 7010. In-vehicle network I/F 7680 transmits and receives signals and the like according to a predetermined protocol supported by communication network 7010 .

Abstract

L'élément d'imagerie dans un aspect selon la présente invention comprend : une puce réceptrice de lumière (201) qui est un exemple de substrat récepteur de lumière ayant un élément de conversion photoélectrique (311) et un transistor de type N (312), qui est un exemple de premier élément connecté électriquement à l'élément de conversion photoélectrique (311) ; une puce de détection (202) qui est un exemple de substrat de détection ayant une pluralité d'éléments qui sont électriquement connectés à la puce de réception de lumière (201) et qui sont inclus dans une unité de détection d'événement pour sortir un signal d'événement selon un changement du courant sorti de l'élément de conversion photoélectrique (311) ; et une unité d'alimentation (313) qui transmet, à un nœud de l'élément de conversion photoélectrique (311) ou à un nœud du transistor de type N (312), un potentiel électrique pour désactiver un fonctionnement de l'élément de conversion photoélectrique (311) ou du transistor de type N (312).
PCT/JP2022/006008 2021-05-10 2022-02-15 Élément d'imagerie, dispositif d'imagerie et procédé de fabrication d'élément d'imagerie WO2022239345A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08129046A (ja) * 1994-11-01 1996-05-21 Mitsubishi Electric Corp 電流−電圧変換アンプのテスト回路
JPH10284707A (ja) * 1997-04-03 1998-10-23 Rohm Co Ltd 光電気変換ｉｃ
WO2019187684A1 (fr) * 2018-03-28 2019-10-03 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs, système de test et procédé de commande pour élément d'imagerie à semi-conducteurs
JP2020053827A (ja) * 2018-09-27 2020-04-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP2020088723A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08129046A (ja) * 1994-11-01 1996-05-21 Mitsubishi Electric Corp 電流−電圧変換アンプのテスト回路
JPH10284707A (ja) * 1997-04-03 1998-10-23 Rohm Co Ltd 光電気変換ｉｃ
WO2019187684A1 (fr) * 2018-03-28 2019-10-03 ソニーセミコンダクタソリューションズ株式会社 Élément d'imagerie à semi-conducteurs, système de test et procédé de commande pour élément d'imagerie à semi-conducteurs
JP2020053827A (ja) * 2018-09-27 2020-04-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP2020088723A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置

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