WO2022239139A1 - Outil de coupe - Google Patents
Outil de coupe Download PDFInfo
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- WO2022239139A1 WO2022239139A1 PCT/JP2021/018015 JP2021018015W WO2022239139A1 WO 2022239139 A1 WO2022239139 A1 WO 2022239139A1 JP 2021018015 W JP2021018015 W JP 2021018015W WO 2022239139 A1 WO2022239139 A1 WO 2022239139A1
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- WIPO (PCT)
- Prior art keywords
- hard layer
- ray diffraction
- aluminum nitride
- cutting tool
- diffraction peak
- Prior art date
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- 238000005520 cutting process Methods 0.000 title claims abstract description 142
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 73
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 62
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 9
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- 229910010037 TiAlN Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000007545 Vickers hardness test Methods 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910016523 CuKa Inorganic materials 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
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- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052758 niobium Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
Definitions
- the present disclosure relates to cutting tools.
- Patent Document 1 describes a film formed on a substrate surface, comprising (Al x Ti 1-xy Si y )(N z C 1-z ) [ 0.05 ⁇ x ⁇ 0.75, 0.01 ⁇ y ⁇ 0.1, 0.6 ⁇ z ⁇ 1]. is disclosed.
- Patent Document 2 a nitride or carbonitride of Ti 1-x Al x (where 0.2 ⁇ x ⁇ 0.7) is formed on the surface of a base material. Any one or more types of wear-resistant coating is coated, and the surface of the wear-resistant coating is coated with Al 1-ab Cr a V b (where 0 ⁇ a ⁇ 0.4, 0 ⁇ b ⁇ 0. 4, a coated cutting tool coated with a chipping-resistant coating of one or more of nitrides or carbonitrides of a + b ⁇ 0.4), wherein the thickness of the wear-resistant coating is A coated cutting tool is disclosed which is characterized by a thickness greater than the thickness of the chipping coating.
- the cutting tool according to the present disclosure is A cutting tool comprising a substrate and a hard layer provided on the substrate,
- the hard layer is made of a compound represented by Ti 1-x Al x N,
- the atomic ratio x of the aluminum element in the Ti 1-x Al x N is 0.6 or more and 0.73 or less
- the compound represented by Ti 1-x Al x N consists of cubic titanium nitride, cubic aluminum nitride and hexagonal aluminum nitride, X-rays derived from the hexagonal aluminum nitride for the sum of the area A c of the X-ray diffraction peak derived from the cubic aluminum nitride and the area A h of the X-ray diffraction peak derived from the hexagonal aluminum nitride
- the ratio of the diffraction peak area Ah is 50% or more and 80% or less
- FIG. 1 is a perspective view illustrating one mode of a cutting tool.
- FIG. 2 is a schematic cross-sectional view of a cutting tool in one aspect of the present embodiment.
- FIG. 3 is a schematic cross-sectional view of a cutting tool in another aspect of this embodiment.
- FIG. 4 is a graph showing the results of X-ray diffraction measurement of the hard layer of this embodiment.
- the present disclosure has been made in view of the above circumstances, and provides a cutting tool that is excellent in wear resistance and fracture resistance when machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys. intended to
- the cutting tool according to the present disclosure is A cutting tool comprising a substrate and a hard layer provided on the substrate,
- the hard layer is made of a compound represented by Ti 1-x Al x N,
- the atomic ratio x of the aluminum element in the Ti 1-x Al x N is 0.6 or more and 0.73 or less
- the compound represented by Ti 1-x Al x N consists of cubic titanium nitride, cubic aluminum nitride and hexagonal aluminum nitride, X-rays derived from the hexagonal aluminum nitride for the sum of the area A c of the X-ray diffraction peak derived from the cubic aluminum nitride and the area A h of the X-ray diffraction peak derived from the hexagonal aluminum nitride
- the ratio of the diffraction peak area Ah is 50% or more and 80% or less
- the above-described cutting tool has the above-described configuration, so that the cutting tool has excellent wear resistance and chipping resistance when machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys. becomes possible.
- wear resistance means resistance to wear of a cutting tool during cutting.
- fracture resistance means resistance to chipping of cutting tools during cutting.
- the hardness HH of the hard layer at room temperature is preferably 20 GPa or more and 35 GPa or less.
- the Young's modulus EH of the hard layer at room temperature is preferably 450 GPa or more and 600 GPa or less.
- the Young's modulus E S of the substrate at room temperature is preferably 500 GPa or more and 650 GPa or less.
- the base material has a Young's modulus within the above range, the base material follows the coating even when subjected to an impact during cutting, so that peeling of the coating and propagation of cracks from the coating to the base material can be suppressed.
- the thickness of the hard layer is preferably 0.5 ⁇ m or more and 20 ⁇ m or less.
- the cutting tool can have excellent adhesion between the substrate and the hard layer.
- an upper layer is provided on the hard layer, and the upper layer is made of a compound represented by AlCrN.
- the upper layer is made of a compound represented by AlCrN.
- the cutting tool is preferably for machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys.
- the cutting tool is particularly suitable for machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys.
- this embodiment An embodiment of the present disclosure (hereinafter referred to as "this embodiment") will be described below. However, this embodiment is not limited to this.
- the notation of the form "A to B” means the upper and lower limits of the range (that is, from A to B). and the unit of B are the same.
- the chemical formula can be any conventionally known composition ratio (element ratio) shall include At this time, the above chemical formula includes not only stoichiometric compositions but also non-stoichiometric compositions.
- AlCrN includes not only the stoichiometric composition “(AlCr) 1 N 1 ” but also non-stoichiometric compositions such as “(AlCr) 1 N 0.8 ”. This also applies to the description of compounds other than "AlCrN” (for example, TiAlN).
- the cutting tool according to the present disclosure is A cutting tool comprising a substrate and a hard layer provided on the substrate,
- the hard layer is made of a compound represented by Ti 1-x Al x N,
- the atomic ratio x of the aluminum element in the Ti 1-x Al x N is 0.6 or more and 0.73 or less
- the compound represented by Ti 1-x Al x N consists of cubic titanium nitride, cubic aluminum nitride and hexagonal aluminum nitride, X-rays derived from the hexagonal aluminum nitride for the sum of the area A c of the X-ray diffraction peak derived from the cubic aluminum nitride and the area A h of the X-ray diffraction peak derived from the hexagonal aluminum nitride
- the ratio of the diffraction peak area Ah is 50% or more and 80% or less
- the cutting tool 10 of the present embodiment includes a base material 11 and a hard layer 12 provided on the base material 11 (hereinafter sometimes simply referred to as a "cutting tool") (Figs. 1 and 2 ).
- the cutting tool may further include, in addition to the hard layer, an adhesion layer provided between the substrate and the hard layer (Fig. 3).
- the cutting tool may further comprise an upper layer provided on the hard layer. Other layers such as the adhesion layer and the upper layer will be described later.
- each of the layers provided on the substrate may be collectively referred to as a "coating". That is, the cutting tool has a coating that covers the substrate, and the coating includes the hard layer. Moreover, the coating may further include the adhesion layer or the upper layer.
- cutting tools examples include drills, end mills, indexable cutting inserts for drills, indexable cutting inserts for end mills, indexable cutting inserts for milling, indexable cutting inserts for turning, metal saws, and gear cutting tools. , reamers, taps, and the like.
- FIG. 1 is a perspective view illustrating one aspect of a cutting tool.
- the cutting tool 10 having such a shape is used, for example, as an indexable cutting insert for turning.
- the cutting tool 10 has a rake face 1, a flank face 2, and a cutting edge ridge 3 where the rake face 1 and the flank face 2 intersect. That is, the rake face 1 and the flank face 2 are surfaces connected with the cutting edge ridge 3 interposed therebetween.
- the cutting edge ridge 3 constitutes the cutting edge of the cutting tool 10 .
- the base material is a cemented carbide (for example, a tungsten carbide (WC)-based cemented carbide, a cemented carbide containing Co in addition to WC, a carbonitride such as Cr, Ti, Ta, Nb in addition to WC).
- a cemented carbide for example, a tungsten carbide (WC)-based cemented carbide, a cemented carbide containing Co in addition to WC, a carbonitride such as Cr, Ti, Ta, Nb in addition to WC.
- cemented carbide, etc. cermet (mainly composed of TiC, TiN, TiCN, etc.), high-speed steel, ceramics (titanium carbide, silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, etc.), cubic It is preferable to include at least one selected from the group consisting of type boron nitride sintered bodies (cBN sintered bodies) and diamond sintered bodies. More preferably, the substrate contains at least one selected from the group consisting of cemented carbide, cermet and cBN sintered body.
- these various base materials it is particularly preferable to select a WC-based cemented carbide or a cBN sintered body.
- the reason for this is that these base materials have an excellent balance of hardness and strength, particularly at high temperatures, and have excellent properties as base materials for cutting tools for the above applications.
- the effect of the present embodiment is exhibited even if such a cemented carbide contains free carbon or an abnormal phase called ⁇ phase in the structure.
- the base material used in this embodiment may have a modified surface.
- a ⁇ -free layer may be formed on the surface, or in the case of a cBN sintered body, a surface-hardened layer may be formed. Even if the surface is modified in this way, The effect of this embodiment is shown.
- the substrate may or may not have a chip breaker.
- the shape of the ridge line of the cutting edge is sharp edge (the ridge where the rake face and the flank face intersect), honing (sharp edge with radius), negative land (chamfering), and combination of honing and negative land. Any of these is included.
- the hardness HS of the substrate at room temperature is preferably 10 GPa or more and 25 GPa or less, more preferably 14 GPa or more and 20 GPa or less, and even more preferably 16 GPa or more and 18 GPa or less.
- the Young's modulus E s of the substrate at room temperature is preferably 500 GPa or more and 650 GPa or less, more preferably 550 GPa or more and 630 GPa or less.
- the hardness H S and Young's modulus E S of the base material can be obtained by the following measuring methods.
- the hardness H S of the base material is determined by a Vickers hardness test according to the standard procedure defined in "JIS Z 2244 - Vickers hardness test".
- An example of a Vickers hardness tester is DMI-5000M (trade name) manufactured by Mitutoyo Corporation.
- the Young's modulus E S of the base material is obtained by the ultrasonic pulse method according to the standard procedure defined in "JIS Z2280 L10 ⁇ W10 ⁇ D10".
- An apparatus for performing the ultrasonic pulse method includes, for example, RAM-5000 type (trade name) manufactured by RITEC.
- an ultrasonic pulse of about 1 to 20 MHz is propagated to the test piece using a longitudinal wave transducer and a transverse wave transducer, and the base material is determined from the propagation speed of the longitudinal wave and the transverse wave propagating in the test piece.
- Find the Young's modulus of the material Such measurements are performed for at least 10 samples, and the average values of the hardness and Young's modulus obtained for each sample are taken as the hardness HS and Young's modulus ES of the substrate. Data that seem to be abnormal values at first glance are excluded.
- the coating 20 includes a hard layer 12 (eg, FIGS. 2 and 3).
- the "coating" is to cover at least part of the base material (for example, the part that comes into contact with the work material during cutting), thereby improving various characteristics such as chipping resistance and wear resistance of the cutting tool. have.
- the coating preferably covers the entire surface of the substrate. However, it does not depart from the scope of the present embodiment even if a part of the substrate is not covered with the coating or the composition of the coating is partially different.
- the thickness of the coating is preferably 0.5 ⁇ m or more and 30 ⁇ m or less, more preferably 1 ⁇ m or more and 10 ⁇ m or less.
- the thickness of the coating means the total thickness of each layer constituting the coating.
- Examples of the "layer constituting the coating” include a hard layer, an adhesion layer, an upper layer, and the like, which will be described later.
- the thickness of the coating is, for example, using a transmission electron microscope (TEM), measuring any 10 points in a cross-sectional sample parallel to the normal direction of the surface of the substrate, and the average of the thickness of the measured 10 points It can be obtained by taking the value.
- the measurement magnification at this time is, for example, 10000 times.
- Examples of the cross-sectional sample include a sample obtained by slicing the cross-section of the cutting tool with an ion slicer. The same applies when measuring the thickness of each of the hard layer, the adhesion layer, the upper layer, and the like, which will be described later.
- Examples of transmission electron microscopes include JEM-2100F (trade name) manufactured by JEOL Ltd.
- the hard layer according to the present embodiment is made of a compound represented by Ti1 -xAlxN .
- “composed of a compound represented by Ti 1-x Al x N” means a configuration composed only of a compound represented by Ti 1 -x Al x N, and a configuration composed only of a compound represented by Ti 1-x Al x N It is a concept that includes a structure consisting only of compounds that are Examples of unavoidable impurities include argon (Ar) and oxygen (O).
- the thickness of the hard layer is preferably 0.5 ⁇ m or more and 20 ⁇ m or less, more preferably 1 ⁇ m or more and 10 ⁇ m or less, and even more preferably 1.5 ⁇ m or more and 5 ⁇ m or less.
- the thickness of the hard layer can be measured, for example, by observing the cross section of the above cutting tool with a transmission electron microscope at a magnification of 10,000.
- the atomic ratio x of the aluminum element in the Ti 1-x Al x N is 0.6 or more and 0.73 or less, preferably 0.63 or more and 0.7 or less, and 0.65 or more and 0.68 or less. is more preferable.
- the atomic ratio x is the atomic ratio to the sum of the titanium element and the aluminum element in the Ti 1-x Al x N.
- the above atomic ratio x can be determined by analyzing the entire hard layer of the above cross-sectional sample with an energy dispersive X-ray spectrometer (TEM-EDX apparatus) attached to the TEM. The observation magnification at this time is, for example, 20000 times.
- the value of the atomic ratio x is obtained by measuring each of arbitrary 10 points in the hard layer of the cross-sectional sample, and the average value of the values of the obtained 10 points is taken as the atomic ratio x in the hard layer.
- the "arbitrary 10 points" are selected from different crystal grains in the hard layer. Examples of the EDX apparatus include JED-2300 (trade name) manufactured by JEOL Ltd.
- the compound represented by Ti 1-x Al x N consists of cubic titanium nitride, cubic aluminum nitride, and hexagonal aluminum nitride.
- the ratio of the area Ah of the diffraction peak is 50% or more and 80% or less, preferably 60% or more and 75% or less, and more preferably 65% or more and 70% or less.
- cutting tools with high hardness have been used for cutting difficult-to-cut materials such as Ni-based heat-resistant alloys (for example, Inconel).
- Ni-based heat-resistant alloys for example, Inconel
- the atomic ratio of aluminum to the total of titanium and aluminum was set to less than 0.6 in order to obtain a cubic crystal structure with high hardness. This is because if the proportion of aluminum is 0.6 or more, hexagonal crystals with low hardness are mixed in the coating, and the hardness of the coating decreases. Under these circumstances, there was no concept of using a cutting tool containing both cubic crystals and hexagonal crystals in the coating for machining difficult-to-cut materials.
- the Young's modulus is lowered although no improvement in hardness can be expected.
- a cutting tool having such a hard layer is used for machining a difficult-to-cut material, it is possible to suppress the growth of cracks due to the impact during cutting, and to suppress the breakage of the tool. In addition, large peeling of the coating during cutting is less likely to occur.
- the inventors of the present invention have found for the first time that the tool is suitable for machining of the above-described difficult-to-cut materials, in which the short life of the tool due to chipping and large peeling of the coating during cutting is a particular problem.
- the area A c of the X-ray diffraction peak derived from the cubic aluminum nitride and the area A h of the X-ray diffraction peak derived from the hexagonal aluminum nitride are obtained by performing X-ray diffraction measurement on the hard layer. be done. A detailed description will be given below.
- X-ray diffraction measurement by the ⁇ /2 ⁇ method is performed on each of three arbitrary points in the hard layer under the conditions described below, and an X-ray diffraction peak derived from a predetermined crystal is obtained.
- XRD measurement X-ray diffraction measurement
- the upper layer is removed by a method such as polishing so that the surface of the hard layer is exposed, and then the X-ray diffraction measurement is performed.
- the position to be irradiated with X-rays is the portion involved in cutting (for example, the cutting edge portion).
- the average value of the areas of the three X-ray diffraction peaks obtained is taken as the area of the X-ray diffraction peaks derived from the given crystal.
- the vertical axis indicates the X-ray diffraction intensity
- the horizontal axis indicates the value of 2 ⁇ .
- Examples of the apparatus used for the X-ray diffraction measurement include "EMPERYAN" (trade name) manufactured by PANalytical.
- the area Ac of the X-ray diffraction peak derived from the cubic aluminum nitride and the hexagonal aluminum nitride are determined by the RIR method (Reference Intensity Raito method). Then, the ratio of the area Ah of the X-ray diffraction peak derived from the hexagonal aluminum nitride to the total area Ah of the X-ray diffraction peaks obtained from the hexagonal aluminum nitride is obtained.
- the card names used in the RIR method are shown below. Hexagonal AlN: 00-025-1133 Cubic AlN: 01-077-6808 Cubic TiN: 01-071-9845
- the hardness HH of the hard layer at room temperature is preferably 20 GPa or more and 35 GPa or less, more preferably 25 GPa or more and 32 GPa or less.
- the Young's modulus EH of the hard layer at room temperature is preferably 450 GPa or more and 600 GPa or less, more preferably 500 GPa or more and 580 GPa or less.
- the hardness H H and the Young's modulus E H can be obtained by a nanoindentation method according to the standard procedure stipulated in "ISO 14577-1: 2015 Metallic materials-Instrumented indentation test for hardness and materials parameters-". is. "Room temperature" as used in this embodiment means 25 degreeC. From the viewpoint of accurately determining the hardness HH and the Young's modulus EH , the indentation depth of the indenter should not exceed 1/10 of the thickness of the hard layer in the indentation direction of the indenter.
- the indentation load of the indenter is 2 g.
- the above-described cross-sectional sample may be used as long as the cross-sectional area of the hard layer can be secured to be 10 times wider than the area of the indenter.
- a sample having a cross section inclined with respect to the normal direction of the surface of the base material may be used so that the cross section of the hard layer is sufficiently wide with respect to the indenter.
- Such measurements are performed for at least 10 cross-sectional samples, and the average values of the hardness and Young's modulus obtained for each sample are taken as the hardness HH and Young's modulus EH of the hard layer. Data that seem to be abnormal values at first glance shall be excluded.
- An example of an apparatus for performing the nanoindentation method is ENT-1100a manufactured by Elionix.
- the hard layer may have a residual stress of ⁇ 5 GPa or more and ⁇ 0.02 GPa or less.
- residual stress in the hard layer means internal stress (intrinsic strain) present in the hard layer.
- residual stress represented by a negative value (negative value) is called “compressive residual stress”. That is, in one aspect of the present embodiment, the compressive residual stress of the hard layer may be 0.02 GPa or more and 5 GPa or less.
- the hard layer in this embodiment is formed by physical vapor deposition. Therefore, the compressive residual stress of the hard layer can be within the range described above.
- the residual stress can be obtained by the 2 ⁇ -sin 2 ⁇ method (lateral tilt method) using X-rays.
- the cutting tool preferably further includes an adhesion layer provided between the substrate and the hard layer.
- the adhesion layer is preferably made of metallic titanium.
- the thickness of the adhesion layer is preferably 0.5 nm or more and 100 nm or less, more preferably 1 nm or more and 20 nm or less.
- the thickness of the adhesion layer can be measured, for example, by observing the cross section of the above cutting tool with a transmission electron microscope at a magnification of 100000 times.
- the cutting tool preferably further includes an upper layer provided on the hard layer, and the upper layer is preferably made of a compound represented by AlCrN.
- the thickness of the upper layer is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, more preferably 1 ⁇ m or more and 5 ⁇ m or less.
- the thickness of the upper layer can be measured, for example, by observing the cross section of the cutting tool as described above at a magnification of 10,000 using a transmission electron microscope.
- the film may further include other layers as long as the effects of the present embodiment are not impaired.
- the composition of the other layer may be different from or the same as that of the hard layer.
- Other layers include, for example, a TiN layer, a TiCN layer, a TiBN layer, an Al 2 O 3 layer, and the like.
- the order of lamination is not particularly limited.
- the other layers include a base layer provided between the adhesion layer and the hard layer, and a layer provided on the hard layer (if there is an upper layer, on the upper layer). Examples include the outermost layer.
- the thickness of the other layer is not particularly limited as long as the effect of the present embodiment is not impaired.
- the cutting tool according to the present embodiment is particularly suitable for machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys. That is, it is preferably for processing Ni-based heat-resistant alloys, for processing Co-based heat-resistant alloys, or for processing Fe-based heat-resistant alloys.
- the method for manufacturing a cutting tool includes: A step of preparing the base material (hereinafter sometimes referred to as "first step”); a step of forming the hard layer on the substrate using a physical vapor deposition method (hereinafter sometimes referred to as a "second step”); including.
- a physical vapor deposition method is a vapor deposition method in which a raw material (also called “evaporation source” or “target”) is vaporized using physical action, and the vaporized raw material is deposited on a base material or the like.
- the physical vapor deposition method used in this embodiment is preferably at least one selected from the group consisting of cathodic arc ion plating, balanced magnetron sputtering, and unbalanced magnetron sputtering.
- the cathodic arc ion plating method which has a high ionization rate of the raw material element, is more preferable.
- the cathodic arc ion plating method is used, the surface of the base material can be subjected to metal ion bombardment cleaning treatment before forming the coating, so cleaning time can be shortened.
- a base material is installed in the equipment and a target is installed as a cathode, and then a high current is applied to this target to generate an arc discharge.
- the atoms forming the target are vaporized and ionized, and deposited on the substrate to which a negative bias voltage is applied to form a film.
- a target is placed on a magnetron electrode equipped with a magnet that forms a balanced magnetic field while a substrate is placed in an apparatus, and high-frequency power is applied between the magnetron electrode and the substrate.
- a coating is formed by colliding ions of the gas generated by the generation of this gas plasma with the target to ionize the atoms emitted from the target and depositing them on the substrate.
- the unbalanced magnetron sputtering method forms a film by unbalancing the magnetic field generated by the magnetron electrodes in the above balanced magnetron sputtering method.
- a substrate is prepared in the first step.
- a cemented carbide substrate is prepared as the substrate.
- a commercially available cemented carbide substrate may be used, or it may be manufactured by a general powder metallurgy method.
- a mixed powder is obtained by mixing WC powder and Co powder with a ball mill or the like. After drying the mixed powder, it is molded into a predetermined shape to obtain a molded body. Further, by sintering the molded body, a WC—Co-based cemented carbide (sintered body) is obtained.
- the sintered body is subjected to a predetermined cutting edge processing such as honing treatment to produce a base material made of a WC—Co based cemented carbide.
- a predetermined cutting edge processing such as honing treatment to produce a base material made of a WC—Co based cemented carbide.
- any substrate other than those described above can be prepared as long as it is conventionally known as this type of substrate.
- a hard layer is formed.
- various methods are used depending on the composition of the hard layer to be formed.
- a method of using alloy targets with different grain sizes such as titanium (Ti), aluminum (Al) and chromium (Cr)
- a method of using a plurality of targets with different compositions and applying during film formation
- Examples include a method of using a pulse voltage as the bias voltage, a method of changing the gas flow rate during film formation, and a method of adjusting the rotation speed of a substrate holder that holds the substrate in the film forming apparatus.
- the second step can be performed as follows. First, a chip having an arbitrary shape is mounted as a substrate in the chamber of the film forming apparatus. For example, the substrate is attached to the outer surface of a substrate holder on a rotary table that is rotatably mounted centrally within the chamber of the deposition apparatus. A bias power supply is attached to the substrate holder. Nitrogen is introduced as a reaction gas while the substrate is rotated in the center of the chamber. Further, the temperature of the substrate is maintained at 400 to 500° C., the reaction gas pressure is maintained at 10 Pa or less (preferably 1.0 to 2.0 Pa), and the voltage of the bias power supply is maintained in the range of 50 to 200 V, or gradually changed.
- the evaporation source for hard layer formation while supplying an arc current of 120 to 200 A to the evaporation source for hard layer formation.
- metal ions are generated from the evaporation source for forming the hard layer, and the supply of the arc current is stopped after a predetermined time has elapsed to form a hard layer on the surface of the substrate.
- the thickness of the hard layer is adjusted to fall within a predetermined range.
- the second step is performed using the physical vapor deposition method as described above, and aluminum chloride (AlCl 3 ) and titanium chloride (TiCl 4 ) described above are not used as raw materials. Therefore, the hard layer according to this embodiment does not contain chlorine.
- the raw material of the hard layer contains Al and Ti.
- the content ratio (atomic number ratio) of Al is preferably 0.6 to 0.7, more preferably 0.63 to 0.67, when the entire raw material of the hard layer is taken as 1.
- the content ratio (atomic number ratio) of Ti is preferably 0.3 to 0.4, more preferably 0.33 to 0.37, when the entire raw material of the hard layer is 1.
- compressive residual stress may be applied to the film. This is because the toughness is improved.
- Compressive residual stress can be applied by, for example, a blasting method, a brush method, a barrel method, an ion implantation method, or the like.
- a step of forming an adhesion layer on the substrate using physical vapor deposition may be performed before performing the step of forming the hard layer.
- a method of forming the adhesion layer for example, a method of performing ion bombardment treatment of metal titanium on the base material as shown below can be mentioned.
- Ar is introduced and heated to around 500.degree.
- an arc current of about 120 to 200 A is supplied to the metal titanium evaporation source, and a bias voltage of 500 to 700 V is applied in an Ar atmosphere to form an extremely thin metal titanium adhesion layer on the substrate surface.
- an upper layer forming step of forming an upper layer on the hard layer, a surface treatment step, and the like may be performed as appropriate.
- the other layers may be formed by conventional methods. Specifically, for example, the other layer may be formed by the PVD method described above.
- the surface treatment step include surface treatment using a medium in which diamond powder is supported on an elastic material that applies stress.
- a cutting tool comprising a substrate and a hard layer provided on the substrate,
- the hard layer is made of a compound represented by Ti 1-x Al x N,
- the atomic ratio x of the aluminum element in the Ti 1-x Al x N is 0.6 or more and 0.73 or less
- the compound represented by Ti 1-x Al x N consists of cubic titanium nitride, cubic aluminum nitride and hexagonal aluminum nitride, X-rays derived from the hexagonal aluminum nitride for the sum of the area A c of the X-ray diffraction peak derived from the cubic aluminum nitride and the area A h of the X-ray diffraction peak derived from the hexagonal aluminum nitride
- the ratio of the diffraction peak area Ah is 50% or more and 80% or less
- a carbide ball end mill for milling (shape: cutting edge diameter: ⁇ 6, radius R3) having hardness and Young's modulus shown in Tables 1 and 2 was prepared as a base material on which a film was to be formed.
- the cemented carbide ball end mill for milling had a WC grain size of 1 to 2 ⁇ m, a Co content of about 8 to 12 wt %, and was made of cemented carbide containing secondary carbides.
- Coatings were prepared by forming the adhesive layer, hard layer and upper layer shown in Tables 1 and 2 on the surface of the substrate. The method for producing the adhesion layer, the hard layer and the upper layer will be described below.
- An adhesion layer was formed by subjecting the surface of the base material to ion bombardment treatment with metallic titanium. The processing conditions at this time are shown below. For Samples 1 to 4, no adhesion layer was formed. First, after reducing the pressure inside the film forming apparatus to 1 Pa or less, Ar was introduced and heated to about 500.degree. After that, an arc current of about 120 to 200 A was supplied to the metal titanium evaporation source, and a bias voltage of 600 V was applied in an Ar atmosphere to form an adhesion layer of metal titanium on the substrate surface.
- Nitrogen was introduced as a reaction gas while the substrate was rotating in the center of the chamber. Furthermore, the temperature of the base material is maintained at 500° C., the reaction gas pressure is maintained at 10 Pa or less, and the voltage of the bias power supply is maintained at a constant value in the range of 50 V to 150 V, or is gradually changed while the evaporation source for forming the hard layer (titanium , aluminum) was supplied with an arc current of 120 A to 200 A. As a result, metal ions were generated from the evaporation sources for forming the hard layer, and the supply of the arc current was stopped after a predetermined period of time to form a hard layer on the surface of the base material or on the surface of the adhesion layer. .
- the evaporation source for forming the hard layer the raw material composition was changed so that the composition of the hard layer shown in Tables 1 and 2 was obtained.
- the upper layer was formed on the surface of the hard layer by the following procedure. First, nitrogen was introduced as a reaction gas while the substrate was rotated in the center of the chamber. Furthermore, the temperature of the base material is kept at 500° C., the reaction gas pressure is kept at 10 Pa or less, and the voltage of the bias power source is maintained at a constant value in the range of 30 V to 100 V, or gradually changed while the evaporation source for forming the upper layer (chromium , aluminum) was supplied with an arc current of 120 A to 200 A. As a result, metal ions were generated from the evaporation sources for forming the upper layer, respectively, and after a predetermined time had elapsed, the supply of the arc current was stopped to form the upper layer on the surface of the hard layer.
- nitrogen was introduced as a reaction gas while the substrate was rotated in the center of the chamber. Furthermore, the temperature of the base material is kept at 500° C., the reaction gas pressure is kept at 10 Pa or less, and the voltage of the bias power source is maintained at
- Samples 1 to 15 and Samples 101 to 105 were produced through the above steps.
- samples 1 to 11 and 101 to 105 correspond to examples.
- Samples 12-15 correspond to comparative examples.
- ⁇ Measurement of film thickness (adhesion layer, hard layer, upper layer thickness)>
- the thickness of each layer constituting the coating (that is, the thickness of the adhesion layer, the hard layer, and the upper layer) was measured using a transmission electron microscope (TEM) (manufactured by JEOL Ltd., trade name: JEM-2100F). It was obtained by measuring arbitrary 10 points in a cross-sectional sample parallel to the normal direction of the surface of the substrate and averaging the thickness of the 10 measured points. The results are shown in Tables 1 and 2.
- composition of the hard layer was calculated by the following method. That is, by analyzing the entire hard layer of the above cross-sectional sample with an energy dispersive X-ray spectrometer (TEM-EDX device) (manufactured by JEOL Ltd., trade name: JED-2300) attached to the TEM, Ti The atomic ratio x of the aluminum element in 1-x Al x N was determined. The observation magnification at this time was 20000 times. More specifically, 10 arbitrary points in the hard layer of the cross-sectional sample are measured to obtain the value of the atomic ratio x, and the average value of the 10 points is calculated as the atomic value of the aluminum element in the hard layer. The ratio is set to x. Here, the "arbitrary 10 points" were selected from different crystal grains in the hard layer. The results are shown in Tables 1 and 2.
- ⁇ X-ray diffraction measurement> The ratio of the area Ah of the X-ray diffraction peak derived from hexagonal aluminum nitride ( h -AlN) in the hard layer was obtained by the following procedure. First, X-ray diffraction measurement (XRD measurement) by the ⁇ /2 ⁇ method is performed for each of three arbitrary points in the hard layer under the conditions described below, and the area of the X-ray diffraction peak derived from a predetermined crystal is determined. asked. The position to be irradiated with X-rays was set to a portion involved in cutting (for example, a cutting edge portion).
- the average value of the areas of the obtained three X-ray diffraction peaks was taken as the area of the X-ray diffraction peaks derived from the given crystal.
- the vertical axis indicates the X-ray diffraction intensity
- the horizontal axis indicates the value of 2 ⁇ .
- the area Ac of the X-ray diffraction peak derived from the cubic aluminum nitride and the hexagonal aluminum nitride are determined by the RIR method (Reference Intensity Raito method).
- the ratio of the area Ah of the X-ray diffraction peak derived from the hexagonal aluminum nitride to the total area Ah of the X-ray diffraction peaks obtained from the above was obtained.
- the results are shown in Tables 1 and 2.
- the card names used in the above RIR method are shown below. Hexagonal AlN: 00-025-1133 Cubic AlN: 01-077-6808 Cubic TiN: 01-071-9845
- the hardness H H and Young's modulus E H of the hard layer were determined by the nanoindentation method according to the standard procedure defined in "ISO 14577-1: 2015 Metallic materials-Instrumented indentation test for hardness and materials parameters-".
- the indentation depth of the indenter did not exceed 1/10 of the thickness of the hard layer in the indentation direction of the indenter.
- a cross-sectional sample was used in which the cross-sectional area of the hard layer can ensure a width 10 times larger than the area of the indenter.
- the indentation load of the indenter was set to 2 g also when measuring the hard layer.
- the hardness H S of the base material was determined by a Vickers hardness test according to the standard procedure defined in "JIS Z 2244 - Vickers hardness test”. DMI-5000M (trade name) manufactured by Mitutoyo Corporation was used as a Vickers hardness tester.
- the Young's modulus E S of the base material was obtained by the ultrasonic pulse method according to the standard procedure defined in "JIS Z2280 L10 ⁇ W10 ⁇ D10".
- RAM-5000 type (trade name) manufactured by RITEC was used as an apparatus for performing the ultrasonic pulse method.
- an ultrasonic pulse of about 1 to 20 MHz is propagated to the test piece using a longitudinal wave transducer and a transverse wave transducer, and the base material is determined from the propagation speed of the longitudinal wave and the transverse wave propagating in the test piece.
- the Young's modulus of the material was obtained. Such measurements were performed for at least 10 samples, and the average values of the hardness and Young's modulus obtained for each sample were taken as the hardness HS and Young's modulus ES of the substrate. Data that appear to be outliers were excluded. The results are shown in Tables 1 and 2.
- the cutting tools (Examples) of Samples 1 to 11 and Samples 101 to 105 gave good results with a cutting time of 32 minutes or more.
- the cutting tools of samples 12 to 15 had a cutting time of 16 minutes or less.
- Inconel 718 which is a Ni-based heat-resistant alloy, is used as a work material in the fracture resistance test. That is, the cutting tools (Examples) of Samples 1 to 11 and Samples 101 to 105 were found to be excellent in chipping resistance when machining Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys. rice field.
- the cutting tools (Examples) of Samples 1 to 11 and Samples 101 to 105 gave good results with a cutting time of 35 minutes or more.
- the cutting tools of samples 12 to 15 had a cutting time of 18 minutes or less.
- Inconel 718 which is a Ni-based heat-resistant alloy, is used as a work material in the wear resistance test. That is, the cutting tools (Examples) of Samples 1 to 11 and Samples 101 to 105 were found to be excellent in wear resistance when processing Ni-based heat-resistant alloys, Co-based heat-resistant alloys, or Fe-based heat-resistant alloys. rice field.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
L'invention concerne un outil de coupe doté d'un substrat et d'une couche dure disposée sur le substrat, dans lequel : la couche dure comprend un composé représenté par Ti1-xAlxN ; le rapport atomique x d'éléments d'aluminium dans ledit Ti1-xAlxN étant de 0,6 à 0,73 ; le composé représenté par Ti1-xAlxN comprenant un nitrure de titane cubique, un nitrure d'aluminium cubique et un nitrure d'aluminium hexagonal ; le rapport entre la surface Ah d'un pic de diffraction des rayons X dérivé du nitrure d'aluminium hexagonal étant de 50 % à 80 % par rapport à la somme de la zone Ac d'un pic de diffraction des rayons X dérivé du nitrure d'aluminium cubique et de la zone Ah du pic de diffraction des rayons X dérivé du nitrure d'aluminium hexagonal ; et la zone Ac du pic de diffraction des rayons X dérivé du nitrure d'aluminium cubique et la zone Ah du pic de diffraction des rayons X dérivé du nitrure d'aluminium hexagonal sont déterminées par la réalisation d'une mesure de diffraction des rayons X sur la couche dure.
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JP2008545063A (ja) * | 2005-07-04 | 2008-12-11 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | 硬質膜被覆された物体およびその製造方法 |
JP2011056594A (ja) * | 2009-09-07 | 2011-03-24 | Dijet Industrial Co Ltd | 切削工具 |
JP2013506567A (ja) * | 2009-10-02 | 2013-02-28 | ケンナメタル インコーポレイテッド | 窒化チタンアルミニウムコーティングおよびこれを作製する方法 |
JP2014079835A (ja) * | 2012-10-16 | 2014-05-08 | Mitsubishi Materials Corp | 表面被覆切削工具 |
JP2014193521A (ja) * | 2012-11-30 | 2014-10-09 | Mitsubishi Materials Corp | 表面被覆切削工具 |
JP2018144224A (ja) * | 2017-03-08 | 2018-09-20 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
JP2018161691A (ja) * | 2017-03-24 | 2018-10-18 | 三菱マテリアル株式会社 | 硬質被覆層が優れた耐摩耗性・耐剥離性を発揮する表面被覆切削工具 |
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- 2021-05-12 JP JP2021570315A patent/JPWO2022239139A1/ja active Pending
- 2021-05-12 WO PCT/JP2021/018015 patent/WO2022239139A1/fr active Application Filing
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JP2008545063A (ja) * | 2005-07-04 | 2008-12-11 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | 硬質膜被覆された物体およびその製造方法 |
JP2011056594A (ja) * | 2009-09-07 | 2011-03-24 | Dijet Industrial Co Ltd | 切削工具 |
JP2013506567A (ja) * | 2009-10-02 | 2013-02-28 | ケンナメタル インコーポレイテッド | 窒化チタンアルミニウムコーティングおよびこれを作製する方法 |
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JP2018144224A (ja) * | 2017-03-08 | 2018-09-20 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
JP2018161691A (ja) * | 2017-03-24 | 2018-10-18 | 三菱マテリアル株式会社 | 硬質被覆層が優れた耐摩耗性・耐剥離性を発揮する表面被覆切削工具 |
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