WO2022218142A1 - 多个工艺腔室压力的控制方法及半导体工艺设备 - Google Patents

多个工艺腔室压力的控制方法及半导体工艺设备 Download PDF

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Publication number
WO2022218142A1
WO2022218142A1 PCT/CN2022/083541 CN2022083541W WO2022218142A1 WO 2022218142 A1 WO2022218142 A1 WO 2022218142A1 CN 2022083541 W CN2022083541 W CN 2022083541W WO 2022218142 A1 WO2022218142 A1 WO 2022218142A1
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pressure
detection device
chamber
indication
process chamber
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French (fr)
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王松涛
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/41865—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by job scheduling, process planning, material flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G05B2219/32252—Scheduling production, machining, job shop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Definitions

  • the present invention relates to the technical field of semiconductor technology, and in particular, to a method for controlling the pressure of multiple process chambers in a semiconductor process equipment and a semiconductor process equipment.
  • the semiconductor process When the semiconductor process is processed by physical or chemical means, it needs to be carried out in a process chamber (PM) that can provide a certain vacuum environment.
  • PM process chamber
  • the wafer When the wafer enters the process chamber from the atmospheric environment, it usually first Enter the transfer chamber (TC) and then enter the process chamber, the transfer chamber can be connected with a plurality of process chambers, and there is a communication between the transfer chamber and each process chamber for communicating or isolating the two. Shut off valve.
  • TC transfer chamber
  • Shut off valve With the development of semiconductor technology, the requirements for the consistency of semiconductor process equipment in the semiconductor process are becoming more and more stringent, and since the pressure of the process chamber has an important influence on the results of the semiconductor process, multiple processes are used in the semiconductor process. It becomes very important that the pressure of the chamber is consistent.
  • the chamber has poor pressure uniformity in semiconductor processing.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and provides a method for controlling the pressure of multiple process chambers and a semiconductor process equipment, which can improve the uniformity of the pressure of multiple process chambers in the semiconductor process. sex.
  • a method for controlling the pressure of a plurality of process chambers in a semiconductor process equipment comprising the following steps:
  • the corresponding relationships of each of the process chambers include N sub-correspondence relationships, where N is an integer greater than 1; the N sub-correspondence relationships are the N sub-correspondence relationships divided by the full scale of a standard pressure detection device One-to-one correspondence between continuous and non-overlapping pressure ranges;
  • the step S1 includes:
  • each of the process chambers is obtained through the following steps:
  • the N sub-correspondences of each of the process chambers are obtained through the following steps:
  • N preset target pressure values is the the upper limit of the full scale of the pressure detection device of the transmission chamber, the initial target pressure value and the N preset target pressure values divide the full scale into N continuous and non-intersection pressure ranges;
  • a linear fitting algorithm is used to calculate and obtain a fitting function representing the sub-correspondence relationship of each pressure range of each process chamber.
  • each of the process chambers is obtained through the following steps:
  • the N sub-correspondences of each of the process chambers are obtained through the following steps:
  • the N preset target pressure values satisfy the following formula:
  • the present invention also provides a semiconductor process equipment, comprising a control device and a plurality of process chambers, each of the process chambers is provided with a pressure detection device; each of the process chambers corresponds to a pressure control device, wherein ,
  • the pressure detection device is used to detect the pressure of the corresponding process chamber
  • the control device is connected in communication with a plurality of the pressure control devices, and is used for outputting each of the process chambers and the target to the pressure control device of each of the process chambers by using the above-mentioned control method provided by the present invention
  • the pressure control parameter corresponding to the pressure value.
  • the semiconductor processing equipment further includes a transfer chamber, and a pressure detection device is provided on the transfer chamber for detecting the pressure of the transfer chamber, and the transfer chamber is connected to a plurality of the processes.
  • the chambers can be selectively communicated.
  • each of the process chambers is provided with an interface for installing a standard pressure detection device.
  • the method for controlling the pressure of multiple process chambers is to obtain each process chamber according to the same target pressure value of the multiple process chambers and the preset corresponding relationship between the pressure control parameters and the pressure values of each process chamber.
  • the pressure control parameters corresponding to the target pressure value of the chamber and the target pressure value are output, and the pressure control parameters corresponding to the target pressure value of each process chamber are output to the pressure control device of each process chamber, so that the pressure control device of each process chamber
  • the pressure control parameter corresponding to the pressure value controls the actual pressure of each process chamber to the above target pressure value, thereby compensating between the air extraction devices of multiple process chambers and between the pressure detection devices of multiple process chambers And at least one of the possible differences between the structures of the multiple process chambers can further improve the pressure consistency of the multiple process chambers in the semiconductor process.
  • the actual pressure of each process chamber can be equalized by the control device using the above-mentioned control method for the pressure of the plurality of process chambers provided by the present invention.
  • the above target pressure value is controlled, so as to compensate for at least one of the possible existence between the air extraction devices of the plurality of process chambers, the pressure detection devices of the plurality of process chambers, and the structures of the plurality of process chambers The difference can further improve the pressure consistency of multiple process chambers in the semiconductor process.
  • FIG. 1 is a schematic structural diagram of a semiconductor process equipment provided by an embodiment of the present invention.
  • FIG. 2 is a flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention
  • FIG. 3 is another flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention.
  • FIG. 4 is another flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention.
  • FIG. 5 is another flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention.
  • FIG. 6 is another flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention.
  • FIG. 7 is still another flowchart of a method for controlling the pressure of multiple process chambers provided by an embodiment of the present invention.
  • the method for controlling the pressure of multiple process chambers in the prior art is first introduced.
  • the pressure consistency of multiple process chambers mainly depends on the consistency and accuracy of the pressure detection devices of each process chamber and the consistency and accuracy of the pressure control devices of each process chamber.
  • the on-off valve between each process chamber and the transfer chamber is closed to isolate each process chamber from the transfer chamber, and then the pressure of each process chamber is controlled by the exhaust volume of the device. Set it to the maximum value.
  • the pressure control device is a pressure regulating valve
  • its opening degree is set to the maximum opening degree
  • each process chamber is pumped through the pumping parts of each process chamber until each process chamber is exhausted.
  • the pressure indication of the pressure detection device remains basically unchanged, and the pressure indication of the pressure detection device of each process chamber at this time is used as the background pressure value (that is, the basic pressure value before the semiconductor process is performed).
  • gas is introduced into each process chamber through the air inlet device of each process chamber, and the pressure of each process chamber is controlled by the pressure control device of each process chamber, so that the pressure detection device of each process chamber is controlled.
  • the pressure readings are the same, so that the pressures of multiple process chambers are consistent.
  • the volume of different process chambers may be different, there may be errors in the pumping capacity of the pumping devices of different process chambers, and the pumping pipes of different process chambers may be different.
  • the length and shape of the road may be different, and the accuracy of the pressure detection device of each process chamber may have errors, etc., which will cause the pressure display of the pressure detection device of each process chamber to be the same, but the actual pressure of each process chamber. are not the same, resulting in poor pressure uniformity across multiple process chambers in a semiconductor process.
  • the present embodiment provides a method for controlling the pressure of multiple process chambers in a semiconductor process equipment, including the following steps:
  • the above-mentioned pressure value can be any pressure value of the process chamber 11, any pressure value corresponds to a pressure control parameter, that is, the above-mentioned corresponding relationship is formed, and each process chamber 11 corresponds to the above-mentioned corresponding relationship.
  • the above target pressure value is the selected pressure value of the process chamber 11 in order to meet the requirements of the semiconductor process during the semiconductor process.
  • the above-mentioned pressure control parameter can be a set pressure value, and the pressure control device 15 of each process chamber 11 controls the pressure of the process chamber 11 according to the respective set pressure value, so that the actual pressure of each process chamber 11 can be equal to and equal to The target pressure value corresponding to the set pressure value.
  • the pressure control devices 15 of each process chamber 11 are connected in communication with the control device 20 , and the control device 20 is used for executing the above steps S1 and S2 .
  • the pressure indications of the pressure detection devices 13 of different process chambers 11 may be the same or different, but the pressure of the process chamber 11 is controlled by the above-mentioned pressure control parameters, The above differences between different process chambers 11 can be compensated, so that regardless of whether the pressure readings of the pressure detection devices 13 of the different process chambers 11 are the same, the actual pressure of the process chamber 11 can be controlled at the same target pressure value .
  • the method for controlling the pressure of multiple process chambers provided in this embodiment is obtained according to the same target pressure value of the multiple process chambers 11 and the preset corresponding relationship between the pressure control parameters and the pressure values of each process chamber 11 .
  • the pressure control parameters of each process chamber 11 corresponding to the target pressure value, and the pressure control parameters corresponding to the target pressure value of each process chamber 11 are output to the pressure control device 15 of each process chamber 11, so that each process chamber 11
  • the pressure control device 15 controls the pressure of each process chamber 11 to the above target pressure value according to the respective pressure control parameters corresponding to the target pressure value, so as to compensate for the difference between the air extraction devices of the plurality of process chambers 11
  • At least one of the possible differences between the pressure detection devices 13 of the plurality of process chambers 11 and the structures of the plurality of process chambers 11 can further improve the pressure consistency of the plurality of process chambers 11 in the semiconductor process .
  • the corresponding relationship between the pressure control parameter and the pressure value of each process chamber 11 may include N sub-correspondence relationships, where N is an integer greater than 1;
  • the corresponding relationship is in one-to-one correspondence with N continuous and non-intersection pressure ranges divided by the full scale of a standard pressure detection device. That is to say, each process chamber 11 corresponds to N sub-correspondences, each pressure value in each sub-correspondence belongs to one of the pressure ranges in the full scale of the standard pressure detection device, and different sub-correspondences correspond to different pressure ranges.
  • the pressure detection device 13 of the chamber can be used as the standard pressure detection device with higher accuracy to improve the accuracy of the obtained correspondence between the pressure control parameters and the pressure values of each process chamber 11, and then can improve the accuracy of the corresponding relationship between the pressure control parameters and the pressure values of the various process chambers.
  • 11 Pressure consistency in semiconductor processes can be used as a standard pressure detection device, because the pressure measurement accuracy of the pressure detection device 14 of the transfer chamber 12 is generally higher than that of the pressure detection device 13 of each process chamber 11 itself.
  • the pressure measurement accuracy, and the high-precision pressure detection device cannot be directly installed on the process chamber 11, because in the semiconductor process, corrosive process gas may be introduced into each process chamber 11, and corrosive The process gas may come into contact with the pressure detection device of each process chamber 11 itself, causing corrosion to the pressure detection device, thereby affecting the pressure measurement accuracy and service life. Therefore, the accuracy of the pressure detection device 13 installed on the process chamber 11 is relatively lower to reduce the cost of equipment use. For this reason, by using the pressure detection device 14 of the transfer chamber 12 as a standard pressure detection device, on the one hand, the standard pressure detection device can not be directly exposed in each process chamber 11, so that the measurement accuracy of the standard pressure detection device can be guaranteed.
  • the transmission chamber 12 since the transmission chamber 12 is connected with each process chamber 11, when the transmission chamber 12 is in communication with each process chamber 11, the pressure detection device 14 of the transmission chamber 12 can detect the transmission The pressure of each process chamber 11 is obtained indirectly from the pressure of the chamber 12 .
  • step S1 may include:
  • the corresponding relationship between the pressure control parameter and the pressure value may include 10 sub-correspondences, that is, N is equal to 10, and the 10 sub-correspondences are divided by the full scale of a standard pressure detection device.
  • One-to-one correspondence between 10 continuous and non-intersection pressure ranges for example, the upper limit of the full range of the standard pressure detection device is P r , and the 10 continuous and non-intersection divided by the full range of the standard pressure detection device
  • the pressure ranges can be respectively:
  • the first pressure range the lower limit value of which is greater than 0/10 ⁇ Pr , and the upper limit value is less than 1/10 ⁇ Pr ;
  • the lower limit value is greater than 1/10 ⁇ Pr , and the upper limit value is less than or equal to 2/10 ⁇ Pr ;
  • the third pressure range the lower limit value of which is greater than 2/10 ⁇ Pr , and the upper limit value is less than or equal to 3/10 ⁇ Pr ;
  • the fourth pressure range the lower limit of which is greater than 3/10 ⁇ Pr and the upper limit is less than or equal to 4/10 ⁇ Pr ;
  • the fifth pressure range the lower limit of which is greater than 4/10 ⁇ Pr , and the upper limit of which is less than or equal to 5/10 ⁇ Pr ;
  • the sixth pressure range the lower limit is greater than 5/10 ⁇ Pr and the upper limit is less than or equal to 6/10 ⁇ Pr ;
  • the seventh pressure range the lower limit is greater than 6/10 ⁇ Pr and the upper limit is less than or equal to 7/10 ⁇ Pr ;
  • the eighth pressure range the lower limit is greater than 7/10 ⁇ Pr and the upper limit is less than or equal to 8/10 ⁇ Pr ;
  • the ninth pressure range the lower limit of which is greater than 8/10 ⁇ Pr and the upper limit is less than or equal to 9/10 ⁇ Pr ;
  • the lower limit value is greater than 9/10 ⁇ Pr
  • the upper limit value is less than or equal to 10/10 ⁇ Pr .
  • the pressure range in which the target pressure value of each process chamber 11 is located is the fifth pressure range (greater than or equal to 4/10 ⁇ Pr and less than 5/10 ⁇ Pr )
  • each pressure range since the N pressure ranges are continuous and have no intersection, each pressure range only corresponds to a unique sub-correspondence relationship, and the sub-correspondence relationships corresponding to different pressure ranges are different. Therefore, it is necessary to determine the current process.
  • each process chamber 11 By making the corresponding relationship between the pressure control parameters and the pressure value of each process chamber 11 include N sub-correspondences, and the N sub-correspondences are divided with the full scale of a standard pressure detection device.
  • the pressure ranges are in one-to-one correspondence, and the corresponding relationship between the pressure control parameters and pressure values of each process chamber 11 can be refined, thereby further improving the accuracy of controlling the actual pressure of each process chamber 11 to the above target pressure value.
  • the corresponding relationship between the pressure control parameters of each process chamber 11 and the pressure value can be obtained through the following steps:
  • the pressure detection device 14 of the transmission chamber 12 is used as a standard pressure detection device. A fitting function is obtained.
  • a fitting function representing the above-mentioned correspondence relationship of the M process chambers 11 can be obtained.
  • each process chamber 11 can also be obtained by the following steps:
  • the algorithm calculates and obtains a fitting function representing a sub-correspondence relationship for each pressure range of each process chamber 11 .
  • the number of process chambers 11 may be M, and the corresponding relationship between the pressure control parameters and pressure values of each process chamber 11 may include N sub-correspondence relationships, and N is equal to 10.
  • the initial target pressure The value and the 10 preset target pressure values and the pressure indications of the pressure detection devices 13 of the M process chambers 11 corresponding to the two can be shown in the following table.
  • P (ie, the above-mentioned P r ) represents the upper limit value of the full scale of the pressure detection device 14 of the transfer chamber 12;
  • X 0 is the initial target pressure value;
  • the pressure detection device 13 of the chamber 11 itself corresponds to the pressure indication of the initial target pressure value X 0 ;
  • Y Mi represents the pressure indication of the pressure detection device 13 of the M-th process chamber 11 itself corresponding to the i-th preset target pressure value.
  • each process chamber 11 can be communicated with the same transmission chamber 12 first, and the transmission chamber 12 can be pumped. After the pressure indication of the pressure detection device 14 of the transmission chamber 12 is stabilized, the pressure indication is recorded. At the same time, record the pressure indications Y 10 -Y M0 of the pressure detection devices 13 of the M process chambers 11 themselves ; then, pass gas into the transfer chamber 12 to make The pressure indication of the pressure detection device 14 of the transmission chamber 12 sequentially reaches N preset target pressure values X 1 to X 10 , wherein the Nth preset target pressure value X 10 is the pressure detection device 14 of the transmission chamber 12 .
  • N preset target pressure values X 1 to X 10 are the upper limit values of N continuous and non-intersecting pressure ranges, respectively.
  • each process chamber 11 communicates with the same transfer chamber 12, and pumping the transfer chamber 12, the pressure of each process chamber 11 can be reduced at the same time, so that the chamber to be transferred
  • the pressure indication of the pressure detection device 14 of the chamber 12 is stable, the pressure indication of the pressure detection device 13 of each process chamber 11 can be recorded at the same time.
  • the pressure of each process chamber 11 can be increased at the same time, so that when the pressure indication of the pressure detection device 14 of the transmission chamber 12 reaches the upper limit of its full scale, Alternatively, when the pressure indication of the pressure detection device 14 of the transfer chamber 12 reaches a preset target pressure value, the pressure indication of the pressure detection device 13 of each process chamber 11 can be recorded at the same time, so that the recording time can be shortened.
  • the time for the pressure indication of each process chamber 11 increases the efficiency of recording the pressure indication of each process chamber 11 , thereby improving the efficiency of obtaining the corresponding relationship between the pressure control parameters and pressure values of each process chamber 11 .
  • the pressure detection device 14 of the transfer chamber 12 can be used as a standard pressure detection device, because the pressure measurement accuracy of the pressure detection device 14 of the transfer chamber 12 is generally higher than that of each process chamber 11
  • the pressure measurement accuracy of its own pressure detection device 13, and the high-precision pressure detection device cannot be directly installed on the process chamber 11, because in the semiconductor process, each process chamber 11 may pass into the corrosive process. Gas, and corrosive process gas may come into contact with the pressure detection device of each process chamber 11, causing corrosion to the pressure detection device, thereby affecting the pressure measurement accuracy and service life. Therefore, the pressure detection device installed on the process chamber 11.
  • the precision of the pressure detection device 13 is relatively low, so as to reduce the use cost of the equipment.
  • the pressure detection device 14 of the transfer chamber 12 as a standard pressure detection device, on the one hand, the standard pressure detection device can not be directly exposed in each process chamber 11, so that the measurement accuracy of the standard pressure detection device can be guaranteed. and service life.
  • the pressure detection device 14 of the transmission chamber 12 since the transmission chamber 12 is connected to each process chamber 11, when the transmission chamber 12 is connected to each process chamber 11, the pressure detection device 14 of the transmission chamber 12 can also detect the pressure at the same time. The pressure of the transmission chamber 12 and the individual process chambers 11 .
  • the pressure detection device 14 of the transmission chamber 12 with higher accuracy as a standard pressure detection device, and recording its pressure indication as at least one of the initial target pressure value, the maximum target pressure value and the preset target pressure value
  • the detection accuracy of these pressure values can be improved, thereby improving the accuracy of the obtained correspondence between the pressure control parameters and the pressure values of each process chamber 11 , thereby improving the pressure of the plurality of process chambers 11 in the semiconductor process. consistency.
  • a standard pressure detection device is set on the process chamber 11, the process chamber 11 is evacuated, and after the pressure indication of the standard pressure detection device is stabilized, the pressure indication is recorded and used as the initial target Pressure value;
  • the difference between this method of obtaining the corresponding relationship of each process chamber 11 by obtaining the corresponding relationship of each process chamber 11 one by one and the above method of simultaneously obtaining the corresponding relationship of each process chamber 11 is that it is obtained through a
  • the standard pressure detection device detects the pressure of each process chamber 11 one by one, and evacuates each process chamber 11 one by one, and then feeds gas into each process chamber 11 one by one.
  • a standard pressure detection device can be set on the first process chamber 11 to detect the pressure of the first process chamber 11, and according to the initial target pressure value and the maximum target pressure value of the first process chamber 11 , the first pressure indication and the second pressure indication, and a linear fitting algorithm is used to calculate the fitting function representing the corresponding relationship of the first process chamber 11.
  • the standard pressure detection device can be removed from the first process chamber.
  • the chamber 11 is removed and installed on the next process chamber 11, the pressure of the first and next process chamber 11 is detected, and the initial target pressure value, the maximum target pressure value, and the first pressure indication of the next process chamber 11 are displayed.
  • the number and the second pressure indication are calculated by using a linear fitting algorithm to obtain the fitting function representing the corresponding relationship of the next process chamber 11 .
  • the method of obtaining the corresponding relationship of each process chamber 11 is based on the initial target pressure value, the maximum target pressure value, the first pressure indication and the second pressure indication, using linear
  • the calculation method of the fitting algorithm to obtain the fitting function representing the corresponding relationship of each process chamber 11, and the method of simultaneously obtaining the corresponding relationship of each process chamber 11, are based on the initial target pressure value, the maximum target pressure value, the first
  • the pressure indication and the second pressure indication are calculated using a linear fitting algorithm to obtain a fitting function representing a corresponding relationship of each process chamber 11 in a similar manner, which will not be repeated here.
  • the corresponding relationship between the pressure control parameters of each process chamber 11 and the pressure value can be obtained through the following steps:
  • a standard pressure detection device is set on the process chamber 11, the process chamber 11 is evacuated, and after the pressure indication of the standard pressure detection device is stabilized, the pressure indication is recorded and used as the initial target Pressure value;
  • the algorithm calculates and obtains the fitting function representing the sub-correspondence of each pressure range of the process chamber 11 .
  • the difference between this method of obtaining the N sub-correspondences of each process chamber 11 one by one and the above method of simultaneously obtaining the N sub-correspondences of each process chamber 11 is that it is one by one through a standard pressure detection device.
  • the pressure of the process chambers 11 is detected, and each process chamber 11 is evacuated one by one, and gas is introduced into each process chamber 11 one by one.
  • a standard pressure detection device can be set on the first process chamber 11 to detect the pressure of the first process chamber 11, and according to the initial target pressure value of the first process chamber 11, N presets
  • the target pressure value, the initial target pressure value, and the pressure indications of the pressure detection device of the process chamber itself corresponding to the N preset target pressure values are calculated by using a linear fitting algorithm to obtain the representation corresponding relationship of the first process chamber 11
  • the fitting function of The initial target pressure value of the process chamber 11, the N preset target pressure values, and the pressure indication of the pressure detection device of the process chamber itself corresponding to the initial target pressure value and the N preset target pressure values adopt linear fitting
  • the algorithm calculates and obtains the fitting function representing the corresponding relationship of the next process chamber 11 , and by repeating this, the fitting function representing the corresponding relationship of each process chamber 11 can be obtained one by one.
  • the pressure measurement accuracy of the standard pressure detection device may be higher than the pressure measurement accuracy of the pressure detection device 13 of each process chamber 11 itself. This is because in the semiconductor process, in each process chamber 11 Corrosive process gas may be introduced, and the corrosive process gas may come into contact with the pressure detection device 13 of each process chamber 11 itself, causing corrosion to the pressure detection device 13 of each process chamber 11 itself, It affects the pressure measurement accuracy and service life of the pressure detection device 13 of each process chamber 11 itself.
  • the standard pressure detection device can be removed from the process chamber 11. Therefore, the corrosive process gas There is no contact with standard pressure sensing devices, and since the cost of the pressure sensing device rises with the accuracy of its pressure measurement.
  • the pressure measurement accuracy of the pressure detection device 13 of each process chamber 11 is relatively low, while the pressure measurement accuracy of the standard pressure detection device is relatively high, so as to avoid the semiconductor process having a high pressure measurement accuracy.
  • Standard pressure sensing devices cause corrosion, reducing the cost of ownership of semiconductor process equipment.
  • the recorded initial target pressure value, maximum target pressure value and maximum target pressure value can be improved.
  • the accuracy of one or more of the pressure value and the preset target pressure value can improve the accuracy of the obtained corresponding relationship between the pressure control parameters of each process chamber 11 and the pressure value, and then can make the With the same target pressure value and the preset corresponding relationship between the pressure control parameters and pressure values of each process chamber 11, the accuracy of the respectively obtained pressure control parameters corresponding to the target pressure values of each process chamber 11 is improved, which can be further improved Pressure uniformity of multiple process chambers 11 in a semiconductor process.
  • the N preset target pressure values can satisfy the following formula:
  • the transmission chamber 12 and the plurality of process chambers can also be connected to the transmission chamber 12.
  • the overall leak rate of the chamber 11 is checked to determine whether the overall leak rate of the transfer chamber 12 and the multiple process chambers 11 meets the semiconductor process requirements. If the overall leak rate of the transfer chamber 12 and the multiple process chambers 11 meets the semiconductor process requirements If required, gas is introduced into the transfer chamber 12 .
  • the pressure indication of each process chamber 11 can be recorded, and the recorded pressure indication of each process chamber 11 can be prevented from being affected.
  • the influence of gas leakage in the transmission chamber 12 and each process chamber 11, thereby improving the accuracy of the recorded pressure indication of each process chamber 11, and then improving the obtained correspondence between the pressure control parameters of each process chamber 11 and the pressure value The accuracy of the relationship is further improved, thereby further improving the pressure consistency of the plurality of process chambers 11 in the semiconductor process.
  • the transfer chamber 12 before each process chamber 11 is communicated with the same transfer chamber 12, the transfer chamber 12 can also be disconnected from each process chamber 11, and the transfer chamber 12 and The leak rate of each process chamber 11 is detected to determine whether the leak rates of the transfer chamber 12 and each process chamber 11 meet the requirements of the semiconductor process. If required, each process chamber 11 is communicated with the same transfer chamber 12 .
  • the pressure indication of each process chamber 11 can be recorded, and the recorded pressure indication of each process chamber 11 can be prevented from being transmitted.
  • each process After the transfer chamber 12 is disconnected from each process chamber 11, and before the leak rates of the transfer chamber 12 and each process chamber 11 are respectively detected, each process The temperatures of the chambers 11 all reach the semiconductor process temperature.
  • the pressure indication of each process chamber 11 can be recorded, and the recorded pressure indication of each process chamber 11 can be prevented from being transmitted.
  • the influence of the temperature of the chamber 12 and each process chamber 11 makes the pressure indication of each process chamber 11 recorded at this time more similar to the real situation of the pressure of each process chamber 11 in the semiconductor process, thereby improving the recorded pressure.
  • the accuracy of the pressure indication of each process chamber 11, thereby improving the accuracy of the corresponding relationship between the obtained pressure control parameters and pressure values of each process chamber 11, and further improving the performance of the plurality of process chambers 11 in the semiconductor process. Pressure consistency.
  • an embodiment of the present invention further provides a semiconductor process equipment, including a control device 20 and a plurality of process chambers 11 , each process chamber 11 is provided with a pressure detection device 13 .
  • Each process chamber 11 corresponds to a pressure control device 15, wherein the pressure detection device 13 is used to detect the pressure of the process chamber 11;
  • the pressure control parameters corresponding to the target pressure value of each process chamber 11 are output to the pressure control device 15 of each process chamber 11 .
  • the control device 20 by connecting the control device 20 to the plurality of pressure control devices 15 in communication, the control device 20 can use the control method for the pressure of the plurality of process chambers provided by the embodiment of the present invention to control each process
  • the actual pressures of the chambers are all controlled at the above target pressure values, so as to compensate for the pressure between the air extraction devices of multiple process chambers, the pressure detection devices of multiple process chambers, and the structures of multiple process chambers At least one of the possible differences can improve the pressure consistency of multiple process chambers in the semiconductor process.
  • the pressure detection device 13 may include a pressure gauge.
  • the pressure control device 15 may include a pressure regulating valve.
  • the semiconductor process equipment may further include a transfer chamber 12 , and a pressure detection device 14 may also be provided on the transfer chamber 12 for monitoring the pressure of the transfer chamber 12 . Detection, the transfer chamber 12 and the plurality of process chambers 11 can be selectively communicated.
  • the pressure detection device 14 of the transfer chamber 12 described above can be used as a standard pressure detection device.
  • the transfer chamber 12 By making the transfer chamber 12 communicate with the plurality of process chambers 11 selectively, when the transfer chamber 12 is in communication with the plurality of process chambers 11, the transfer chamber 12 can be pumped to make each process The pressure of the chamber 11 is simultaneously reduced, so that when the pressure reading of the pressure detection device 14 of the to-be-transferred chamber 12 is stable, the pressure reading of the pressure detection device 13 of each process chamber 11 can be recorded at the same time.
  • the pressure of each process chamber 11 can be increased at the same time, so that when the pressure indication of the pressure detection device 14 of the transmission chamber 12 reaches the upper limit of its full scale, Alternatively, when the pressure indication of the pressure detection device 14 of the transfer chamber 12 reaches a preset target pressure value, the pressure indication of the pressure detection device 13 of each process chamber 11 can be recorded at the same time, so that the recording time can be shortened.
  • the time for the pressure indication of each process chamber 11 increases the efficiency of recording the pressure indication of each process chamber 11 , thereby improving the efficiency of obtaining the corresponding relationship of each process chamber 11 .
  • each process chamber 11 may be provided with an interface for installing a standard pressure detection device. So that the standard pressure detection device can be connected with each process chamber 11 through the interface provided on each process chamber 11 . In this way, the corresponding process chambers 11 can be directly inspected individually using standard pressure inspection devices.
  • the semiconductor process equipment may further include a plurality of on-off valves 23 , and the plurality of on-off valves 23 and the plurality of process chambers 11 are arranged in a corresponding process in a one-to-one correspondence.
  • each on-off valve 23 is used to control the on-off between the corresponding process chamber 11 and the transfer chamber 12 . That is, by controlling the opening or closing of each on-off valve 23 , the corresponding process chamber 11 and the transfer chamber 12 can be communicated or disconnected.
  • the semiconductor process equipment may further include a plurality of first air intake devices 18 , and the plurality of first air intake devices 18 are arranged in a one-to-one correspondence with the plurality of process chambers 11 On the corresponding process chambers 11 , each gas inlet device is used to deliver the semiconductor process gas into the corresponding process chambers 11 .
  • the semiconductor process equipment may further include a second air intake device 22 , and the second air intake device 22 is disposed on the transfer chamber 12 and is used for supplying air to the transfer chamber 12 . transport gas.
  • the gas delivered by the second air inlet device 22 into the transmission chamber 12 may be nitrogen gas.
  • the semiconductor process equipment may further include a plurality of first air extraction lines 16 and a plurality of first air extraction devices 17 , wherein the plurality of first air extraction lines 16 are connected to The plurality of process chambers 11 are connected in one-to-one correspondence, the plurality of first air extraction devices 17 are communicated with the plurality of first air extraction pipelines 16 in one-to-one correspondence, and each first air extraction device 17 is used to pass the corresponding first air extraction device 17.
  • the gas pipeline 16 evacuates the corresponding process chamber 11 , and the pressure control device 15 of each process chamber 11 is arranged on the corresponding first gas extraction pipeline 16 for evacuating the gas flowing through the corresponding first gas extraction pipeline 16 flow is adjusted.
  • the first air pumping device 17 draws air to the corresponding process chamber 11, it outputs the pressure control parameters corresponding to each process chamber 11 to the pressure control device 15 of each process chamber 11.
  • the pressure control device 15 may According to the pressure control parameter, the flow rate of the gas extracted from the corresponding process chamber 11 by the first air extraction device 17 via the corresponding first air extraction pipeline 16 is adjusted, so as to realize the pressure of the corresponding process chamber 11 Control is performed so that the actual pressure is equal to the target pressure value.
  • the pressure control parameters corresponding to each process chamber 11 are respectively output to the pressure control device 15 of each process chamber 11, with the help of the pressure control device 15 can adjust the flow rate of the semiconductor process gas flowing out from the corresponding process chamber 11 via the corresponding first gas extraction pipeline 16 , so as to control the pressure of the corresponding process chamber 11 by means of the pressure control device 15 .
  • the semiconductor process equipment may further include a second air extraction line 19 and a second air extraction device 21 , wherein the second air extraction line 19 communicates with the transfer chamber 12 ,
  • the second air extraction device 21 is communicated with the second air extraction pipeline 19 , and the second air extraction device 21 is used to extract air from the corresponding process chamber 11 through the corresponding second air extraction pipeline 19 , and to transmit the pressure control of the chamber 12 .
  • the device 15 is arranged on the second air extraction line 19 and is used to adjust the flow rate of the gas flowing through the second air extraction line 19 .
  • the transfer chamber 12 When the transfer chamber 12 is in communication with each process chamber 11, the transfer chamber 12 can be evacuated by means of the second air extraction device 21, so that the pressure of each process chamber 11 can be simultaneously pumped down.
  • the first air evacuation device 17 of the process chamber 11 evacuates the corresponding process chamber 11, so that the operation difficulty can be reduced. Efficiency of pumping of transfer chamber 12 and each process chamber 11 .
  • the pressure of the transfer chamber 12 can be adjusted by adjusting the flow rate of the gas flowing through the second gas extraction line 19 by means of the pressure control device 15 of the transfer chamber 12 .
  • gas can be delivered to the transmission chamber 12 by means of the second air inlet device 22, and then gas can be delivered to each process chamber 11, so that the operation difficulty can be reduced, Improve the efficiency of conveying gas.
  • the method for controlling the pressure of multiple process chambers and the semiconductor process equipment provided by the present invention can improve the pressure consistency of the multiple process chambers in the semiconductor process.

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Abstract

提供一种多个工艺腔室压力的控制方法及半导体工艺设备，其中，控制方法包括以下步骤：根据多个工艺腔室的同一目标压力值，以及预设的各个工艺腔室的控压参数与压力值的对应关系，分别获得各个工艺腔室与目标压力值对应的控压参数(S1)；向各个工艺腔室的压力控制装置分别输出各个工艺腔室与目标压力值对应的控压参数，以使各个工艺腔室的压力控制装置根据各自与目标压力值对应的控压参数，将各个工艺腔室的实际压力均控制在目标压力值(S2)。通过提供多个工艺腔室压力的控制方法及半导体工艺设备，能够提高多个工艺腔室在半导体工艺中的压力一致性。

Description

多个工艺腔室压力的控制方法及半导体工艺设备 技术领域
本发明涉及半导体工艺技术领域，具体地，涉及一种半导体工艺设备中多个工艺腔室压力的控制方法及半导体工艺设备。
背景技术
半导体工艺在通过物理或化学等手段对晶圆进行处理时，需要在能够提供一定真空环境的工艺腔室(PM)中进行，晶圆在由大气环境进入工艺腔室的过程中，通常会先进入传输腔室(TC)再进入工艺腔室，该传输腔室可以与多个工艺腔室连接，且传输腔室与每个工艺腔室之间均设有用于使二者连通或隔离的通断阀。随着半导体工艺的发展，对半导体工艺设备在半导体工艺中的一致性要求越来越严格，而由于工艺腔室的压力对半导体工艺结果具有重要的影响，因此，在半导体工艺中使多个工艺腔室的压力一致就变得十分重要。
但是，由于多个工艺腔室的抽气装置之间、多个工艺腔室的压力检测装置之间以及多个工艺腔室的结构之间中的至少一者可能存在差异，导致多个工艺腔室在半导体工艺中的压力一致性较差。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种多个工艺腔室压力的控制方法及半导体工艺设备，其能够提高多个工艺腔室在半导体工艺中的压力一致性。
为实现本发明的目的而提供一种半导体工艺设备中多个工艺腔室压力的控制方法，包括以下步骤：
S1、根据多个所述工艺腔室的同一目标压力值，以及预设的各个所述工艺腔室的控压参数与压力值的对应关系，分别获得各个所述工艺腔室与所述目标压力值对应的控压参数；
S2、向各个所述工艺腔室的压力控制装置分别输出各个所述工艺腔室与所述目标压力值对应的所述控压参数，以使各个所述工艺腔室的压力控制装置根据各自与所述目标压力值对应的所述控压参数，将各个所述工艺腔室的实际压力均控制在所述目标压力值。
优选的，各个所述工艺腔室的所述对应关系均包括N个子对应关系，N为大于1的整数；所述N个子对应关系与由一标准压力检测装置的全量程划分而成的N个连续且无交集的压力范围一一对应；
所述步骤S1，包括：
S11、确定各个所述工艺腔室的与所述目标压力值所在的所述压力范围对应的子对应关系；
S12、根据所述目标压力值，以及各个所述工艺腔室的与所述目标压力值所在的所述压力范围对应的子对应关系，获得各个所述工艺腔室与所述目标压力值对应的所述控压参数。
优选的，各个所述工艺腔室的所述对应关系，通过以下步骤获得：
S01、使各个所述工艺腔室均与同一传输腔室连通，对所述传输腔室进行抽气，待所述传输腔室的压力检测装置的压力示数稳定后，记录该压力示数，作为初始目标压力值；
S02、记录各个所述工艺腔室自身的压力检测装置此时的第一压力示数；
S03、向所述传输腔室中通入气体，直至所述传输腔室的压力检测装置的压力示数达到其全量程的上限值，将所述上限值作为最大目标压力值；
S04、记录各个所述工艺腔室自身的压力检测装置此时的第二压力示数；
S05、根据所述初始目标压力值、所述最大目标压力值以及各个所述工 艺腔室的第一压力示数和第二压力示数，采用线性拟合算法计算获得表示各个所述工艺腔室的所述对应关系的拟合函数。
优选的，各个所述工艺腔室的N个所述子对应关系，通过以下步骤获得：
S001、使各个所述工艺腔室均与同一传输腔室连通，对所述传输腔室进行抽气，待所述传输腔室的压力检测装置的压力示数稳定后，记录该压力示数，作为初始目标压力值；
S002、记录各个所述工艺腔室自身的压力检测装置此时的压力示数；
S003、向所述传输腔室中通入气体，使所述传输腔室的压力检测装置的压力示数依次到达N个预设目标压力值，其中，第N个预设目标压力值为所述传输腔室的压力检测装置全量程的上限值，所述初始目标压力值和所述N个预设目标压力值将所述全量程划分为N个连续且无交集的压力范围；
S004、所述传输腔室的压力检测装置的压力示数每到达一所述预设目标压力值，记录各个所述工艺腔室自身的压力检测装置此时的压力示数；
S005、根据所述初始目标压力值、所述N个预设目标压力值以及所述初始目标压力值和所述N个预设目标压力值对应的各个所述工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得表示各个工艺腔室的每个所述压力范围的所述子对应关系的拟合函数。
优选的，各个所述工艺腔室的所述对应关系，通过以下步骤获得：
S10、将一标准压力检测装置设置在所述工艺腔室上，对所述工艺腔室进行抽气，待所述标准压力检测装置的压力示数稳定后，记录所述压力示数，将其作为初始目标压力值；
S20、记录所述工艺腔室自身的压力检测装置此时的第一压力示数；
S30、向所述所述工艺腔室通入气体，直至所述标准压力检测装置的压力示数达到其全量程的上限值，将所述上限值作为最大目标压力值；
S40、记录所述工艺腔室自身的压力检测装置此时的第二压力示数；
S50、根据所述初始目标压力值、所述最大目标压力值、所述第一压力示数以及所述第二压力示数，采用线性拟合算法计算获得所述工艺腔室的表示所述对应关系的拟合函数。
优选的，各个所述工艺腔室的N个所述子对应关系，通过以下步骤获得：
S100、将一标准压力检测装置设置在所述工艺腔室上，对所述工艺腔室进行抽气，待所述标准压力检测装置的压力示数稳定后，记录所述压力示数，将其作为初始目标压力值；
S200、记录所述工艺腔室自身的压力检测装置此时的压力示数；
S300、向所述工艺腔室通入气体，使所述标准压力检测装置的压力示数依次到达N个预设目标压力值，其中，第N个预设目标压力值为所述标准压力检测装置全量程的上限值，所述初始目标压力值和所述N个预设目标压力值将所述全量程划分为N个连续且无交集的压力范围；
S400、所述标准压力检测装置的压力示数每到达一所述预设目标压力值，记录所述工艺腔室自身的压力检测装置此时的压力示数；
S500、根据所述初始目标压力值、所述N个预设目标压力值以及所述初始目标压力值和所述N个预设目标压力值对应的所述工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得所述工艺腔室每个所述压力范围的表示所述子对应关系的拟合函数。
优选的，所述N个预设目标压力值满足下述公式：
Figure PCTCN2022083541-appb-000001
其中，P (i)为第i个预设目标压力值，i＝1，2，...，N；P r为所述传输腔室的压力检测装置或所述标准压力检测装置的全量程的上限值。
本发明还提供一种半导体工艺设备，包括控制装置和多个工艺腔室，每个所述工艺腔室上均设置有压力检测装置；每个所述工艺腔室均对应一压力控制装置，其中，
所述压力检测装置用于对对应的所述工艺腔室的压力进行检测；
所述控制装置与多个所述压力控制装置通信连接，用于采用本发明提供的上述控制方法，向各个所述工艺腔室的所述压力控制装置输出各个所述工艺腔室与所述目标压力值对应的所述控压参数。
优选的，所述半导体工艺设备还包括传输腔室，所述传输腔室上设置有压力检测装置，用于对所述传输腔室的压力进行检测，所述传输腔室与多个所述工艺腔室均可选择性地连通。
优选的，每个所述工艺腔室上均设置有用于安装标准压力检测装置的接口。
本发明具有以下有益效果：
本发明提供的多个工艺腔室压力的控制方法，是根据多个工艺腔室的同一目标压力值，以及预设的各个工艺腔室的控压参数与压力值的对应关系，获得各个工艺腔室与目标压力值对应的控压参数，并向各个工艺腔室的压力控制装置输出各个工艺腔室与目标压力值对应的控压参数，以使各个工艺腔室的压力控制装置根据各自与目标压力值对应的控压参数，将各个工艺腔室的实际压力均控制在上述目标压力值，从而可以补偿多个工艺腔室的抽气装置之间、多个工艺腔室的压力检测装置之间以及多个工艺腔室的结构之间中的至少一者可能存在的差异，进而能够提高多个工艺腔室在半导体工艺中的压力一致性。
本发明提供的半导体工艺设备，通过使控制装置与多个压力控制装置通信连接，以借助控制装置采用如本发明提供的上述多个工艺腔室压力的控制方法将各个工艺腔室的实际压力均控制在上述目标压力值，从而可以补偿多个工艺腔室的抽气装置之间、多个工艺腔室的压力检测装置之间以及多个工艺腔室的结构之间中的至少一者可能存在的差异，进而能够提高多个工艺腔室在半导体工艺中的压力一致性。
附图说明
图1为本发明实施例提供的半导体工艺设备的结构示意图；
图2为本发明实施例提供的多个工艺腔室压力的控制方法的一种流程图；
图3为本发明实施例提供的多个工艺腔室压力的控制方法的另一种流程图；
图4为本发明实施例提供的多个工艺腔室压力的控制方法的又一种流程图；
图5为本发明实施例提供的多个工艺腔室压力的控制方法的再一种流程图；
图6为本发明实施例提供的多个工艺腔室压力的控制方法的再一种流程图；
图7为本发明实施例提供的多个工艺腔室压力的控制方法的再一种流程图。
附图标记说明：
11-工艺腔室；12-传输腔室；13-压力检测装置；14-压力检测装置；15-压力控制装置；16-第一抽气管路；17-第一抽气装置；18-第一进气装置；19-第二抽气管路；20-控制装置；21-第二抽气装置；22-第二进气装置；23-通断阀。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的多个工艺腔室压力的控制方法及半导体工艺设备进行详细描述。
为了更好的理解本发明实施例提供的多个工艺腔室压力的控制方法，首 先对现有技术中多个工艺腔室压力的控制方法进行介绍。在现有技术中，多个工艺腔室的压力一致性主要依赖于各个工艺腔室的压力检测装置的一致性及准确性，以及各个工艺腔室的压力控制装置的一致性及准确性。在半导体工艺开始之前，先将各个工艺腔室与传输腔室之间的通断阀关闭，使各个工艺腔室均与传输腔室隔离，再将各个工艺腔室的压力控制装置的排气量设定为最大值，例如压力控制装置为压力调节阀时，其开度设定为最大开度，并通过各个工艺腔室的抽气部件对各个工艺腔室进行抽气，直至各个工艺腔室的压力检测装置的压力示数基本保持不变，以此时各个工艺腔室的压力检测装置的压力示数作为本底压力值(即，在进行半导体工艺之前的基础压力值)，在半导体工艺过程中，通过各个工艺腔室的进气装置向各个工艺腔室内通入气体，并通过各个工艺腔室的压力控制装置对各个工艺腔室的压力进行控制，使各个工艺腔室的压力检测装置的压力示数相同，从而使多个工艺腔室的压力处于一致。
但是，由于不同的工艺腔室之间存在差异，例如不同的工艺腔室的体积可能存在差异，不同的工艺腔室的抽气装置的抽气能力可能存在误差，不同的工艺腔室的抽气管路的长短及形状可能不同，各个工艺腔室的压力检测装置的精度可能存在误差等等，这会造成虽然各个工艺腔室的压力检测装置的压力示数相同，但各个工艺腔室的实际压力并不相同，从而导致多个工艺腔室在半导体工艺中的压力一致性较差。
为了解决上述问题，请一并参阅图1和图2，本实施例提供一种半导体工艺设备中多个工艺腔室压力的控制方法，包括以下步骤：
S1、根据多个工艺腔室11的同一目标压力值，以及预设的各个工艺腔室11的控压参数与压力值的对应关系，获得各个工艺腔室11与目标压力值对应的控压参数；
上述压力值可以是工艺腔室11的任一压力值，任一压力值均对应一个 控压参数，即构成上述对应关系，并且每个工艺腔室11均对应一上述对应关系。
上述目标压力值即为在半导体工艺过程中，为了满足半导体工艺的需求，选取的工艺腔室11的压力值。
S2、向各个工艺腔室11的压力控制装置15输出各个工艺腔室11与目标压力值对应的控压参数，以使各个工艺腔室11的压力控制装置15根据各自与目标压力值对应的控压参数，将各个工艺腔室11的实际压力均控制在上述目标压力值。
上述控压参数可以是一设置压力值，各个工艺腔室11的压力控制装置15根据各自的设置压力值对工艺腔室11的压力进行控制，可以使各工艺腔室11的实际压力均等于与该设置压力值对应的上述目标压力值。
如图1所示，各个工艺腔室11的压力控制装置15均与控制装置20通信连接，该控制装置20用于执行上述步骤S1和步骤S2。
由于多个工艺腔室11的抽气装置之间，多个工艺腔室11的压力检测装置13之间以及多个工艺腔室11的结构之间中的至少一者可能存在的差异，在半导体工艺过程中，在目标压力值相同的条件下，不同的工艺腔室11的压力检测装置13的压力示数可能相同也可能不同，但借助上述控压参数对工艺腔室11的压力进行控制，可以补偿不同的工艺腔室11之间存在的上述差异，从而无论不同的工艺腔室11的压力检测装置13的压力示数是否相同，工艺腔室11的实际压力均可以控制在同一目标压力值。
本实施例提供的多个工艺腔室压力的控制方法，是根据多个工艺腔室11的同一目标压力值，以及预设的各个工艺腔室11的控压参数与压力值的对应关系，获得各个工艺腔室11与目标压力值对应的控压参数，并向各个工艺腔室11的压力控制装置15输出各个工艺腔室11与目标压力值对应的控压参数，以使各个工艺腔室11的压力控制装置15根据各自与目标压力值对应的 控压参数，将各个工艺腔室11的压力均控制在上述目标压力值，从而可以补偿多个工艺腔室11的抽气装置之间、多个工艺腔室11的压力检测装置13之间以及多个工艺腔室11的结构之间中的至少一者可能存在的差异，进而能够提高多个工艺腔室11在半导体工艺中的压力一致性。
如图1和图3所示，在本发明一优选实施例中，各个工艺腔室11的控压参数与压力值的对应关系可以均包括N个子对应关系，N为大于1的整数；N个子对应关系与由一标准压力检测装置的全量程划分而成的N个连续且无交集的压力范围一一对应。也就是说，每个工艺腔室11均对应有N个子对应关系，每个子对应关系中的各个压力值属于上述标准压力检测装置的全量程中的其中一个压力范围，且不同的子对应关系对应不同的压力范围。
在各个工艺腔室11的控压参数与压力值的对应关系的获得方法中，需要使用上述标准压力检测装置直接或间接测量工艺腔室11的压力值，为了保证测量精度，需要选用比工艺腔室的压力检测装置13精度更高的压力检测装置作为上述标准压力检测装置，以提高获得的各个工艺腔室11的控压参数与压力值的对应关系的精度，继而可以提高多个工艺腔室11在半导体工艺中的压力一致性。例如，传输腔室12的压力检测装置14可以作为一标准压力检测装置，这是因为传输腔室12的压力检测装置14的测压精度一般高于各个工艺腔室11自身的压力检测装置13的测压精度，而高精度的压力检测装置无法直接安装在工艺腔室11上，因为在半导体工艺中，各个工艺腔室11中均可能会通入具有腐蚀性的工艺气体，且具有腐蚀性的工艺气体可能会与各个工艺腔室11自身的压力检测装置接触，对压力检测装置造成腐蚀，从而影响测压精度及使用寿命，因此，安装在工艺腔室11上的压力检测装置13的精度相对较低，以降低设备的使用成本。为此，通过将传输腔室12的压力检测装置14作为一标准压力检测装置，一方面可以使标准压力检测装置不直接暴露在各个工艺腔室11中，从而可以保证标准压力检测装置的测量精度和使 用寿命，另一方面，由于传输腔室12与各个工艺腔室11均连接，当传输腔室12与各个工艺腔室11均连通时，传输腔室12的压力检测装置14可以通过检测传输腔室12的压力来间接获得各个工艺腔室11的压力。
在此基础上，上述步骤S1，可以包括：
S11、确定各个工艺腔室11的与目标压力值所在的压力范围对应的子对应关系；
S12、根据目标压力值，以及各个工艺腔室11的与目标压力值所在的压力范围对应的子对应关系，获得各个工艺腔室11与目标压力值对应的控压参数。
例如，对于每个工艺腔室11，其控压参数与压力值的对应关系可以均包括10个子对应关系，即，N等于10，10个子对应关系与由一标准压力检测装置的全量程划分而成的10个连续且无交集的压力范围一一对应，例如，标准压力检测装置的全量程的上限值为P r，由标准压力检测装置的全量程划分而成的10个连续且无交集的压力范围可以分别为：
第一压力范围，其下限值大于0/10×P r，上限值小于1/10×P r；
第二压力范围，其下限值大于1/10×P r，上限值小于等于2/10×P r；
第三压力范围，其下限值大于2/10×P r，上限值小于等于3/10×P r；
第四压力范围，其下限值大于3/10×P r，上限值小于等于4/10×P r；
第五压力范围，其下限值大于4/10×P r，上限值小于等于5/10×P r；
第六压力范围，其下限值大于5/10×P r，上限值小于等于6/10×P r；
第七压力范围，其下限值大于6/10×P r，上限值小于等于7/10×P r；
第八压力范围，其下限值大于7/10×P r，上限值小于等于8/10×P r；
第九压力范围，其下限值大于8/10×P r，上限值小于等于9/10×P r；
第十压力范围，其下限值大于9/10×P r，上限值小于等于10/10×P r。
若各个工艺腔室11的目标压力值所在的压力范围为上述第五压力范围 (大于等于4/10×P r，且小于5/10×P r)，则在执行上述步骤S11时，确定各个工艺腔室11的与目标压力值所在的上述第五压力范围对应的子对应关系；在执行上述步骤S12时，根据该目标压力值，以及各个工艺腔室11的与上述第五压力范围对应的子对应关系，获得各个工艺腔室11与该目标压力值对应的控压参数。
由上可知，由于N个压力范围是连续且无交集的，这使得各压力范围仅对应唯一的子对应关系，且不同的压力范围对应的子对应关系不同，因此，就需要先确定当前工艺所需的目标压力值所在的压力范围对应的子对应关系，然后再从确定的该子对应关系中找到与该目标压力值对应的控压参数。
通过使各个工艺腔室11的控压参数与压力值的对应关系均包括N个子对应关系，且N个子对应关系与由一标准压力检测装置的全量程划分而成的N个连续且无交集的压力范围一一对应，可以细化各个工艺腔室11的控压参数与压力值的对应关系，从而可以进一步提高将各个工艺腔室11的实际压力均控制在上述目标压力值的准确度。
如图1和图4所示，在本发明一优选实施例中，各个工艺腔室11的控压参数与压力值的对应关系，可以通过以下步骤获得：
S01、使各个工艺腔室11均与同一传输腔室12连通，对传输腔室12进行抽气，待传输腔室12的压力检测装置14(即，作为标准压力检测装置)的压力示数稳定后，记录该压力示数，作为初始目标压力值；
S02、记录各个工艺腔室11的压力检测装置13此时的第一压力示数；
S03、向传输腔室12中通入气体，直至传输腔室12的压力检测装置14的压力示数达到其全量程的上限值，将上限值作为最大目标压力值；
S04、记录各个工艺腔室11的压力检测装置13此时的第二压力示数；
S05、根据初始目标压力值、最大目标压力值以及各个工艺腔室11的第一压力示数和第二压力示数，采用线性拟合算法计算获得各个工艺腔室11 的表示上述对应关系的拟合函数。
例如，工艺腔室11的数量可以为M个，上述拟合函数可以为Y＝AX+B，其中，Y为各个工艺腔室11的压力检测装置13的压力示数，其为因变量，X为传输腔室12的压力检测装置14的压力示数，其为自变量，传输腔室12的压力检测装置14作为一标准压力检测装置，A和B均为常数，二者能够通过联立多个拟合函数求解得到。
具体的，可以首先使各个工艺腔室11均与同一传输腔室12连通，对传输腔室12进行抽气，待传输腔室12的压力检测装置14的压力示数稳定后，记录该压力示数，作为初始目标压力值X 0；同时，记录M个工艺腔室11的压力检测装置13此时的第一压力示数Y j0，j＝1,2,...,M；然后，向传输腔室12中通入气体，直至传输腔室12的压力检测装置14的压力示数达到其全量程的上限值，将该上限值作为最大目标压力值X r；同时，记录M个工艺腔室11的压力检测装置13此时的第二压力示数Y jr，j＝1,2,...,M；最后，根据初始目标压力值X 0、最大目标压力值X r以及第一压力示数Y j0和第二压力示数Y jr，采用线性拟合算法计算获得M个工艺腔室11的表示上述对应关系的拟合函数。具体地，对于第j个工艺腔室11，可以为联立拟合函数为Y j0＝AX 0+B和Y jr＝AX r+B，解得常数A为(Y jr-Y j0)/(X r-X 0)，常数B为(X rY j0-X 0Y jr)/(X r-X 0)，将常数A和常数B带入拟合函数Y＝AX+B，从而可以获得第j个工艺腔室11的表示对应关系的拟合函数为Y＝(Y jr-Y j0)X/(X r-X 0)+(X rY j0-X 0Y jr)/(X r-X 0)。由此，可以获得M个工艺腔室11的表示上述对应关系的拟合函数。
如图1和图5所示，在本发明一优选实施例中，各个工艺腔室11的N个上述子对应关系，也可以通过以下步骤获得：
S001、使各个工艺腔室11均与同一传输腔室12连通，对传输腔室12进行抽气，待传输腔室12的压力检测装置14的压力示数稳定后，记录该压 力示数，作为初始目标压力值；
S002、记录各个工艺腔室11的压力检测装置13此时的压力示数；
S003、向传输腔室12中通入气体，使传输腔室12的压力检测装置14的压力示数依次到达N个预设目标压力值，其中，第N个预设目标压力值为传输腔室12的压力检测装置14全量程的上限值，初始目标压力值和N个预设目标压力值将全量程划分为N个连续且无交集的压力范围；
S004、传输腔室12的压力检测装置14的压力示数每到达一预设目标压力值，记录各个工艺腔室11自身的压力检测装置13此时的压力示数；
S005、根据初始目标压力值、N个预设目标压力值以及初始目标压力值和N个预设目标压力值对应的各个工艺腔室11自身的压力检测装置13的压力示数，采用线性拟合算法计算获得各个工艺腔室11的每个压力范围的表示子对应关系的拟合函数。
例如，工艺腔室11的数量可以为M个，各个工艺腔室11的控压参数与压力值的对应关系可以均包括N个子对应关系，且N等于10，在这种情况下，初始目标压力值和10个预设目标压力值以及与二者对应的M个工艺腔室11自身的压力检测装置13的压力示数可以如下表所示。
Figure PCTCN2022083541-appb-000002
Figure PCTCN2022083541-appb-000003
在上表中，P(即，上述P r)表示传输腔室12的压力检测装置14的全量程的上限值；X 0为初始目标压力值；X i表示第i个预设目标压力值，i＝1,2,...,N，且N＝10；传输腔室12的压力检测装置14作为一标准压力检测装置；Y 10表示第1个工艺腔室11自身的压力检测装置13对应初始目标压力值X 0的压力示数；Y 1i表示第1个工艺腔室11自身的压力检测装置13对应第i个预设目标压力值的压力示数；Y M0表示第M个工艺腔室11自身的压力检测装置13对应初始目标压力值X 0的压力示数；Y Mi表示第M个工艺腔室11自身的压力检测装置13对应第i个预设目标压力值的压力示数。
具体的，可以首先使各个工艺腔室11均与同一传输腔室12连通，对传输腔室12进行抽气，待传输腔室12的压力检测装置14的压力示数稳定后，记录该压力示数，作为初始目标压力值X 0；同时，记录M个工艺腔室11自身的压力检测装置13此时的压力示数Y 10～Y M0；然后，向传输腔室12中通入气体，使传输腔室12的压力检测装置14的压力示数依次到达N个预设目标压力值X 1～X 10，其中，第N个预设目标压力值X 10为传输腔室12的压力检测装置14全量程的上限值，初始目标压力值X 0和N个预设目标压力值X 1～X 10将全量程划分为10个连续且无交集的压力范围，即，N个预设目标压力值X 1～X 10分别为N个连续且无交集的压力范围的上限值。传输腔室12的压力检测装置14的压力示数到达第i个预设目标压力值时，记录M个工艺腔室11自身的压力检测装置13此时的压力示数Y 1i～Y Mi，i＝1,2,...,N；最后，采用线性拟合算法计算获得各个工艺腔室11的表示对应关系的拟合函数。
例如，拟合函数可以为Y＝AX+B，其中，Y为各个工艺腔室11的压力检测装置13的压力示数，X为传输腔室12的压力检测装置14的压力示数，A和B常数，二者能够通过联立多个拟合函数求解得到。
具体的，采用线性拟合算法计算获得第j个工艺腔室11的第i个压力范围的表示第i个子对应关系的拟合函数可以为，联立拟合函数为Y j0＝AX 0+B和Y ji＝AX i+B，解得常数A为(Y ji-Y j0)/(X i-X 0)，常数B为(X iY j0-X 0Y ji)/(X i-X 0)，将常数A和常数B带入拟合函数Y＝AX+B，从而可以获得第j个工艺腔室11的第i个压力范围的表示第i个子对应关系的拟合函数为Y＝(Y ji-Y j0)X/(X i-X 0)+(X iY j0-X 0Y ji)/(X i-X 0)，其中，j＝1,2,...,M；i＝1,2,...,N。
在本发明的优选实施例中，通过使各个工艺腔室11均与同一传输腔室12连通，对传输腔室12进行抽气，可以使各个工艺腔室11的压力同时降低，这样待传输腔室12的压力检测装置14的压力示数稳定时，可以同时记录各个工艺腔室11自身的压力检测装置13此时的压力示数。并且，通过向传输腔室12中通入气体，可以使各个工艺腔室11的压力同时增加，这样当传输腔室12的压力检测装置14的压力示数达到其全量程的上限值时，或者，当传输腔室12的压力检测装置14的压力示数每到达一预设目标压力值，可以同时记录各个工艺腔室11自身的压力检测装置13此时的压力示数，从而可以缩短记录各个工艺腔室11的压力示数的时间，继而提高记录各个工艺腔室11的压力示数的效率，进而提高获得各个工艺腔室11的控压参数与压力值的对应关系的效率。
在本发明一优选实施例中，传输腔室12的压力检测装置14可以作为一标准压力检测装置，这是因为传输腔室12的压力检测装置14的测压精度一般高于各个工艺腔室11自身的压力检测装置13的测压精度，而高精度的压力检测装置无法直接安装在工艺腔室11上，因为在半导体工艺中，各个工艺腔室11中均可能会通入具有腐蚀性的工艺气体，且具有腐蚀性的工艺气体可 能会与各个工艺腔室11自身的压力检测装置接触，对压力检测装置造成腐蚀，从而影响测压精度及使用寿命，因此，安装在工艺腔室11上的压力检测装置13的精度相对较低，以降低设备的使用成本。为此，通过将传输腔室12的压力检测装置14作为一标准压力检测装置，一方面可以使标准压力检测装置不直接暴露在各个工艺腔室11中，从而可以保证标准压力检测装置的测量精度和使用寿命，另一方面，由于传输腔室12与各个工艺腔室11均连接，当传输腔室12与各个工艺腔室11均连通时，传输腔室12的压力检测装置14也可以同时检测传输腔室12和各个工艺腔室11的压力。
并且，通过将精度较高的传输腔室12的压力检测装置14作为一标准压力检测装置，并记录其压力示数，作为初始目标压力值、最大目标压力值和预设目标压力值中的至少一者，可以提高这些压力值的检测精度，从而可以提高获得的各个工艺腔室11的控压参数与压力值的对应关系的精度，继而可以提高多个工艺腔室11在半导体工艺中的压力一致性。
如图1和图6所示，在本发明另一优选实施例中，对于任一工艺腔室11，该工艺腔室11的控压参数与压力值的对应关系，可以通过以下步骤获得：
S10、将一标准压力检测装置设置在该工艺腔室11上，对该工艺腔室11进行抽气，待标准压力检测装置的压力示数稳定后，记录该压力示数，将其作为初始目标压力值；
S20、记录该工艺腔室11自身的压力检测装置13此时的第一压力示数；
S30、向该工艺腔室11通入气体，直至标准压力检测装置的压力示数达到其全量程的上限值，将上限值作为最大目标压力值；
S40、记录该工艺腔室11自身的压力检测装置13此时的第二压力示数；
S50、根据初始目标压力值、最大目标压力值、第一压力示数以及第二压力示数，采用线性拟合算法计算获得该工艺腔室11的表示对应关系的拟合函数。
这种通过逐个获得各个工艺腔室11的对应关系，以获得各个工艺腔室11的对应关系的方式与上文中同时获得各个工艺腔室11的对应关系的方式相比，区别在于其是通过一标准压力检测装置逐个对各个工艺腔室11的压力进行检测，并逐个对各个工艺腔室11进行抽气，然后逐个向各个工艺腔室11通入气体。例如，可以将标准压力检测装置设置在第一个工艺腔室11上，对第一个工艺腔室11压力进行检测，并根据第一个工艺腔室11的初始目标压力值、最大目标压力值、第一压力示数以及第二压力示数，采用线性拟合算法计算获得第一个工艺腔室11的表示对应关系的拟合函数，之后，可以将标准压力检测装置从第一个工艺腔室11上拆下安装至下一个工艺腔室11上，对第下一个工艺腔室11压力进行检测，并根据下一个工艺腔室11的初始目标压力值、最大目标压力值、第一压力示数以及第二压力示数，采用线性拟合算法计算获得下一个工艺腔室11的表示对应关系的拟合函数，如此重复就可以逐个获得各个工艺腔室11的表示对应关系的拟合函数。
通过逐个获得各个工艺腔室11的对应关系，以获得各个工艺腔室11的对应关系的方式中根据初始目标压力值、最大目标压力值、第一压力示数以及第二压力示数，采用线性拟合算法计算获得各个工艺腔室11的表示对应关系的拟合函数的计算方式，与同时获得各个工艺腔室11的对应关系的方式中，根据初始目标压力值、最大目标压力值、第一压力示数以及第二压力示数，采用线性拟合算法计算获得各个工艺腔室11的表示对应关系的拟合函数的计算方式类似，在此就不再赘述。
如图1和图7所示，在本发明一优选实施例中，各个工艺腔室11的控压参数与压力值的对应关系，可以通过以下步骤获得：
S100、将一标准压力检测装置设置在该工艺腔室11上，对该工艺腔室11进行抽气，待标准压力检测装置的压力示数稳定后，记录该压力示数，将其作为初始目标压力值；
S200、记录该工艺腔室11自身的压力检测装置13此时的压力示数；
S300、向该工艺腔室11通入气体，使标准压力检测装置的压力示数依次到达N个预设目标压力值，其中，第N个目标压力值为标准压力检测装置全量程的上限值，初始目标压力值和N个预设目标压力值将全量程划分为N个连续且无交集的压力范围；
S400、标准压力检测装置的压力示数每到达一预设目标压力值，记录该工艺腔室11自身的压力检测装置13此时的压力示数；
S500、根据初始目标压力值、N个预设目标压力值以及初始目标压力值和N个预设目标压力值对应的该工艺腔室11自身的压力检测装置13的压力示数，采用线性拟合算法计算获得该工艺腔室11每个压力范围的表示子对应关系的拟合函数。
这种通过逐个获得各个工艺腔室11的N个子对应关系的方式与上文中同时获得各个工艺腔室11的N个子对应关系的方式相比，区别在于其是通过一标准压力检测装置逐个对各个工艺腔室11的压力进行检测，并逐个对各个工艺腔室11进行抽气，并逐个向各个工艺腔室11通入气体。例如，可以将标准压力检测装置设置在第一个工艺腔室11上，对第一个工艺腔室11压力进行检测，并根据第一个工艺腔室11的初始目标压力值、N个预设目标压力值以及初始目标压力值、N个预设目标压力值对应的该工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得第一个工艺腔室11的表示对应关系的拟合函数，之后，可以将标准压力检测装置从第一个工艺腔室11上拆下安装至下一个工艺腔室11上，对第下一个工艺腔室11压力进行检测，并根据下一个工艺腔室11的初始目标压力值、N个预设目标压力值以及初始目标压力值、N个预设目标压力值对应的该工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得下一个工艺腔室11的表示对应关系的拟合函数，如此重复就可以逐个获得各个工艺腔室11的表示对应关系的 拟合函数。
通过逐个获得各个工艺腔室11的对应关系，以获得各个工艺腔室11的对应关系的方式中根据初始目标压力值、N个预设目标压力值以及初始目标压力值、N个预设目标压力值对应的该工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得各个工艺腔室11的表示对应关系的拟合函数的计算方式，与同时获得各个工艺腔室11的对应关系的方式中，根据初始目标压力值、N个预设目标压力值以及初始目标压力值、N个预设目标压力值对应的该工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得各个工艺腔室11的表示对应关系的拟合函数的计算方式类似，在此就不再赘述。
在本发明一优选实施例中，标准压力检测装置的测压精度可以高于各个工艺腔室11自身的压力检测装置13的测压精度，这是由于在半导体工艺中，各个工艺腔室11中均可能会通入具有腐蚀性的工艺气体，且具有腐蚀性的工艺气体可能会与各个工艺腔室11自身的压力检测装置13接触，对各个工艺腔室11自身的压力检测装置13造成腐蚀，影响各个工艺腔室11自身的压力检测装置13的测压精度及使用寿命，而在进行半导体工艺时，可以将标准压力检测装置从工艺腔室11上拆下，因此，具有腐蚀性的工艺气体不会与标准压力检测装置接触，并且由于压力检测装置的成本随其测压精度的上升而上升。因此，在半导体工艺中，各个工艺腔室11自身的压力检测装置13的测压精度相对较低，而标准压力检测装置的测压精度相对较高，以避免半导体工艺对测压精度较高的标准压力检测装置造成腐蚀，降低半导体工艺设备的使用成本。
并且，通过记录精度较高的标准压力检测装置的压力示数，作为初始目标压力值、最大目标压力值和预设目标压力值中一个或多个，可以提高记录的初始目标压力值、最大目标压力值和预设目标压力值中一个或多个的精度， 从而可以提高获得的各个工艺腔室11的控压参数与压力值的对应关系的精度，继而可以使根据多个工艺腔室11的同一目标压力值，以及预设的各个工艺腔室11的控压参数与压力值的对应关系，分别获得的各个工艺腔室11与目标压力值对应的控压参数的精度提高，进而可以进一步提高多个工艺腔室11在半导体工艺中的压力一致性。
在本发明一优选实施例中，N个预设目标压力值可以满足下述公式：
Figure PCTCN2022083541-appb-000004
其中，P (i)为第i个预设目标压力值，i＝1，2,...，N；P r为传输腔室12的压力检测装置14或标准压力检测装置的全量程的上限值。
例如，各个工艺腔室11对应关系可以均包括10个子对应关系，则第1个预设目标压力值为P (1)＝1/10P r。
在本发明一优选实施例中，在使各个工艺腔室11均与同一传输腔室12连通之后，且向传输腔室12中通入气体之前，还可以对传输腔室12和多个工艺腔室11的整体漏率进行检查，判断传输腔室12和多个工艺腔室11的整体漏率是否满足半导体工艺要求，若传输腔室12和多个工艺腔室11的整体漏率满足半导体工艺要求，则向传输腔室12中通入气体。
这样可以在传输腔室12和多个工艺腔室11的整体漏率满足半导体工艺要求的前提下，记录各个工艺腔室11的压力示数，避免记录的各个工艺腔室11的压力示数受到传输腔室12和各个工艺腔室11漏气的影响，从而提高记录的各个工艺腔室11的压力示数的准确性，继而提高获得的各个工艺腔室11的控压参数与压力值的对应关系的准确性，进而进一步提高多个工艺腔室11在半导体工艺中的压力一致性。
在本发明一优选实施例中，在使各个工艺腔室11均与同一传输腔室12连通之前，还可以将传输腔室12与各个工艺腔室11均断开，分别对传输腔室12和各个工艺腔室11的漏率进行检测，判断传输腔室12和各个工艺腔室 11的漏率是否均满足半导体工艺要求，若传输腔室12和各个工艺腔室11的漏率均满足半导体工艺要求，则使各个工艺腔室11均与同一传输腔室12连通。
这样可以在传输腔室12和各个工艺腔室11的漏率均满足半导体工艺要求的前提下，记录各个工艺腔室11的压力示数，避免记录的各个工艺腔室11的压力示数受到传输腔室12和各个工艺腔室11漏气的影响，从而提高记录的各个工艺腔室11的压力示数的准确性，继而提高获得的各个工艺腔室11的控压参数与压力值的对应关系的准确性，进而进一步提高多个工艺腔室11在半导体工艺中的压力一致性。
在本发明一优选实施例中，在将传输腔室12与各个工艺腔室11均断开之后，分别对传输腔室12和各个工艺腔室11的漏率进行检测之前，还可以使各个工艺腔室11的温度均达到半导体工艺温度。
这样可以在传输腔室12和各个工艺腔室11的温度均达到半导体工艺温度的前提下，记录各个工艺腔室11的压力示数，避免记录的各个工艺腔室11的的压力示数受到传输腔室12和各个工艺腔室11的温度的影响，使此时记录的各个工艺腔室11的压力示数，与半导体工艺中各个工艺腔室11的压力的真实情况更加相近，从而提高记录的各个工艺腔室11的压力示数的准确性，继而提高获得的各个工艺腔室11的控压参数与压力值的对应关系的准确性，进而进一步提高多个工艺腔室11在半导体工艺中的压力一致性。
如图1所示，作为另一个技术方案，本发明实施例还提供一种半导体工艺设备，包括控制装置20和多个工艺腔室11，每个工艺腔室11上均设置有压力检测装置13。每个工艺腔室11均对应一压力控制装置15，其中，压力检测装置13用于对工艺腔室11的压力进行检测；控制装置20与多个压力控制装置15通信连接，用于采用如本发明实施例提供的上述控制方法，向各个工艺腔室11的压力控制装置15输出各个工艺腔室11与目标压力值对应的控 压参数。
本发明实施例提供的半导体工艺设备，通过使控制装置20与多个压力控制装置15通信连接，可以借助控制装置20采用如本发明实施例提供的多个工艺腔室压力的控制方法将各个工艺腔室的实际压力均控制在上述目标压力值，从而可以补偿多个工艺腔室的抽气装置之间、多个工艺腔室的压力检测装置之间以及多个工艺腔室的结构之间中的至少一者可能存在的差异，进而能够提高多个工艺腔室在半导体工艺中的压力一致性。
可选的，压力检测装置13可以包括压力计。
可选的，压力控制装置15可以包括压力调节阀。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括传输腔室12，传输腔室12上也可以设置有压力检测装置14，用于对传输腔室12的压力进行检测，传输腔室12与多个工艺腔室11均可选择性地连通。
上述传输腔室12的压力检测装置14可以作为标准压力检测装置。通过使传输腔室12与多个工艺腔室11均可选择性地连通，可以在传输腔室12与多个工艺腔室11均连通时，通过对传输腔室12进行抽气，使各个工艺腔室11的压力同时降低，这样待传输腔室12的压力检测装置14的压力示数稳定时，可以同时记录各个工艺腔室11自身的压力检测装置13此时的压力示数。并可以通过向传输腔室12中通入气体，可以使各个工艺腔室11的压力同时增加，这样当传输腔室12的压力检测装置14的压力示数达到其全量程的上限值时，或者，当传输腔室12的压力检测装置14的压力示数每到达一预设目标压力值，可以同时记录各个工艺腔室11自身的压力检测装置13此时的压力示数，从而可以缩短记录各个工艺腔室11的压力示数的时间，继而提高记录各个工艺腔室11的压力示数的效率，进而提高获得各个工艺腔室11的对应关系的效率。
在本发明一优选实施例中，每个工艺腔室11上可以均设置有用于安装 标准压力检测装置的接口。以使标准压力检测装置能够通过设置在每个工艺腔室11上的接口与每个工艺腔室11连接。这样，可以利用标准压力检测装置单独对相应的工艺腔室11直接进行检测。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括多个通断阀23，多个通断阀23与多个工艺腔室11一一对应的设置在对应的工艺腔室11与传输腔室12之间，各个通断阀23用于控制对应的工艺腔室11与传输腔室12之间的通断。即，通过控制各个通断阀23的开启或者关闭，可以使对应的工艺腔室11与传输腔室12之间连通或者断开。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括多个第一进气装置18，多个第一进气装置18与多个工艺腔室11一一对应的设置对应的工艺腔室11上，各个进气装置用于向对应的工艺腔室11内输送半导体工艺气体。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括第二进气装置22，第二进气装置22设置在传输腔室12上，用于向传输腔室12内输送气体。
可选的，第二进气装置22向传输腔室12内输送的气体可以为氮气。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括多个第一抽气管路16和多个第一抽气装置17，其中，多个第一抽气管路16与多个工艺腔室11一一对应地连通，多个第一抽气装置17与多个第一抽气管路16一一对应地连通，各个第一抽气装置17用于通过对应的第一抽气管路16对对应的工艺腔室11进行抽气，各个工艺腔室11的压力控制装置15设置在对应的第一抽气管路16上，用于对流经对应的第一抽气管路16的气体的流量进行调节。
例如，当第一抽气装置17对对应的工艺腔室11抽气时，向各个工艺腔室11的压力控制装置15分别输出与各个工艺腔室11对应的控压参数，压力 控制装置15可以根据该控压参数对从对应的工艺腔室11中经由对应的第一抽气管路16被第一抽气装置17抽走的气体的流量进行调节，从而实现对对应的工艺腔室11的压力进行控制，以使其实际压力等于目标压力值。
当第一进气装置18向对应的工艺腔室11内输送半导体工艺气体时，向各个工艺腔室11的压力控制装置15分别输出与各个工艺腔室11对应的控压参数，借助压力控制装置15可以对从对应的工艺腔室11中经由对应的第一抽气管路16流出的半导体工艺气体的流量进行调节，从而借助压力控制装置15对对应的工艺腔室11的压力进行控制。
如图1所示，在本发明一优选实施例中，半导体工艺设备可以还包括第二抽气管路19和第二抽气装置21，其中，第二抽气管路19与传输腔室12连通，第二抽气装置21与第二抽气管路19连通，第二抽气装置21用于通过对应的第二抽气管路19对对应的工艺腔室11进行抽气，传输腔室12的压力控制装置15设置在第二抽气管路19上，用于对流经第二抽气管路19的气体的流量进行调节。
当传输腔室12与各个工艺腔室11均连通时，借助第二抽气装置21可以对传输腔室12进行抽气，使各个工艺腔室11的压力同时抽降低，这样一方面无需借助各个工艺腔室11的第一抽气装置17对对应的工艺腔室11进行抽气，从而可以降低操作难度，另一方面由于传输腔室12与各个工艺腔室11均连通，因此，可以提高对传输腔室12和各个工艺腔室11进行抽气的效率。借助传输腔室12的压力控制装置15对流经第二抽气管路19的气体的流量进行调节，可以对传输腔室12的压力进行调节。
在各个工艺腔室11均与同一传输腔室12连通时，借助第二进气装置22可以向传输腔室12中输送气体，进而向各个工艺腔室11中输送气体，从而可以降低操作难度，提高输送气体的效率。
综上所述，本发明提供的多个工艺腔室压力的控制方法及半导体工艺设 备，能够提高多个工艺腔室在半导体工艺中的压力一致性。
可以解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种半导体工艺设备中多个工艺腔室压力的控制方法，其特征在于，包括以下步骤：
    S1、根据多个所述工艺腔室的同一目标压力值，以及预设的各个所述工艺腔室的控压参数与压力值的对应关系，获得各个所述工艺腔室与所述目标压力值对应的控压参数；
    S2、向各个所述工艺腔室的压力控制装置输出各个所述工艺腔室与所述目标压力值对应的所述控压参数，以使各个所述工艺腔室的压力控制装置根据各自与所述目标压力值对应的所述控压参数，将各个所述工艺腔室的实际压力均控制在所述目标压力值。
  2. 根据权利要求1所述的控制方法，其特征在于，各个所述工艺腔室的所述对应关系均包括N个子对应关系，N为大于1的整数；所述N个子对应关系与由一标准压力检测装置的全量程划分而成的N个连续且无交集的压力范围一一对应；
    所述步骤S1，包括：
    S11、确定各个所述工艺腔室的与所述目标压力值所在的所述压力范围对应的子对应关系；
    S12、根据所述目标压力值，以及各个所述工艺腔室的与所述目标压力值所在的所述压力范围对应的子对应关系，获得各个所述工艺腔室与所述目标压力值对应的所述控压参数。
  3. 根据权利要求1所述的控制方法，其特征在于，各个所述工艺腔室的所述对应关系，通过以下步骤获得：
    S01、使各个所述工艺腔室均与同一传输腔室连通，对所述传输腔室进行抽气，待所述传输腔室的压力检测装置的压力示数稳定后，记录所述压力 示数，作为初始目标压力值；
    S02、记录各个所述工艺腔室自身的压力检测装置此时的第一压力示数；
    S03、向所述传输腔室中通入气体，直至所述传输腔室的压力检测装置的压力示数达到其全量程的上限值，将所述上限值作为最大目标压力值；
    S04、记录各个所述工艺腔室自身的压力检测装置此时的第二压力示数；
    S05、根据所述初始目标压力值、所述最大目标压力值以及各个所述工艺腔室的第一压力示数和第二压力示数，采用线性拟合算法计算获得表示各个所述工艺腔室的所述对应关系的拟合函数。
  4. 根据权利要求2所述的控制方法，其特征在于，各个所述工艺腔室的N个所述子对应关系，通过以下步骤获得：
    S001、使各个所述工艺腔室均与同一传输腔室连通，对所述传输腔室进行抽气，待所述传输腔室的压力检测装置的压力示数稳定后，记录所述压力示数，作为初始目标压力值；
    S002、记录各个所述工艺腔室自身的压力检测装置此时的压力示数；
    S003、向所述传输腔室中通入气体，使所述传输腔室的压力检测装置的压力示数依次到达N个预设目标压力值，其中，第N个预设目标压力值为所述传输腔室的压力检测装置全量程的上限值，所述初始目标压力值和所述N个预设目标压力值将所述全量程划分为N个连续且无交集的压力范围；
    S004、所述传输腔室的压力检测装置的压力示数每到达一所述预设目标压力值，记录各个所述工艺腔室自身的压力检测装置此时的压力示数；
    S005、根据所述初始目标压力值、所述N个预设目标压力值以及所述初始目标压力值和所述N个预设目标压力值对应的各个所述工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得表示各个工艺腔室的每个所述压力范围的所述子对应关系的拟合函数。
  5. 根据权利要求1所述的控制方法，其特征在于，各个所述工艺腔室的所述对应关系，通过以下步骤获得：
    S10、将一标准压力检测装置设置在所述工艺腔室上，对所述工艺腔室进行抽气，待所述标准压力检测装置的压力示数稳定后，记录所述压力示数，将其作为初始目标压力值；
    S20、记录所述工艺腔室自身的压力检测装置此时的第一压力示数；
    S30、向所述所述工艺腔室通入气体，直至所述标准压力检测装置的压力示数达到其全量程的上限值，将所述上限值作为最大目标压力值；
    S40、记录所述工艺腔室自身的压力检测装置此时的第二压力示数；
    S50、根据所述初始目标压力值、所述最大目标压力值、所述第一压力示数以及所述第二压力示数，采用线性拟合算法计算获得所述工艺腔室的表示所述对应关系的拟合函数。
  6. 根据权利要求2所述的控制方法，其特征在于，各个所述工艺腔室的N个所述子对应关系，通过以下步骤获得：
    S100、将一标准压力检测装置设置在所述工艺腔室上，对所述工艺腔室进行抽气，待所述标准压力检测装置的压力示数稳定后，记录所述压力示数，将其作为初始目标压力值；
    S200、记录所述工艺腔室自身的压力检测装置此时的压力示数；
    S300、向所述工艺腔室通入气体，使所述标准压力检测装置的压力示数依次到达N个预设目标压力值，其中，第N个预设目标压力值为所述标准压力检测装置全量程的上限值，所述初始目标压力值和所述N个预设目标压力值将所述全量程划分为N个连续且无交集的压力范围；
    S400、所述标准压力检测装置的压力示数每到达一所述预设目标压力值，记录所述工艺腔室自身的压力检测装置此时的压力示数；
    S500、根据所述初始目标压力值、所述N个预设目标压力值以及所述 初始目标压力值和所述N个预设目标压力值对应的所述工艺腔室自身的压力检测装置的压力示数，采用线性拟合算法计算获得所述工艺腔室每个所述压力范围的表示所述子对应关系的拟合函数。
  7. 根据权利要求4或6所述的控制方法，其特征在于，所述N个预设目标压力值满足下述公式：
    Figure PCTCN2022083541-appb-100001
    其中，P (i)为第i个预设目标压力值，i＝1，2，...，N；P r为所述全量程的上限值。
  8. 一种半导体工艺设备，其特征在于，包括控制装置和多个工艺腔室，每个所述工艺腔室上均设置有压力检测装置；每个所述工艺腔室均对应一压力控制装置，其中，
    所述压力检测装置用于对对应的所述工艺腔室的压力进行检测；
    所述控制装置与多个所述压力控制装置通信连接，用于采用如权利要求1-7任一项所述的控制方法，向各个所述工艺腔室的所述压力控制装置输出各个所述工艺腔室与所述目标压力值对应的所述控压参数。
  9. 根据权利要求8所述的半导体工艺设备，其特征在于，所述半导体工艺设备还包括传输腔室，所述传输腔室上设置有压力检测装置，用于对所述传输腔室的压力进行检测，所述传输腔室与多个所述工艺腔室均可选择性地连通。
  10. 根据权利要求8所述的半导体工艺设备，其特征在于，每个所述工艺腔室上均设置有用于安装标准压力检测装置的接口。
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