WO2022215633A1 - Mandrin électrostatique et dispositif de traitement de substrat - Google Patents

Mandrin électrostatique et dispositif de traitement de substrat Download PDF

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Publication number
WO2022215633A1
WO2022215633A1 PCT/JP2022/016272 JP2022016272W WO2022215633A1 WO 2022215633 A1 WO2022215633 A1 WO 2022215633A1 JP 2022016272 W JP2022016272 W JP 2022016272W WO 2022215633 A1 WO2022215633 A1 WO 2022215633A1
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WIPO (PCT)
Prior art keywords
electrode
ridge
electrostatic chuck
substrate
electrostatic
Prior art date
Application number
PCT/JP2022/016272
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English (en)
Japanese (ja)
Inventor
地塩 輿水
Original Assignee
東京エレクトロン株式会社
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Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2023512988A priority Critical patent/JP7378668B2/ja
Priority to KR1020237027246A priority patent/KR20230169071A/ko
Publication of WO2022215633A1 publication Critical patent/WO2022215633A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • Various aspects and embodiments of the present disclosure relate to electrostatic chucks and substrate processing apparatuses.
  • Patent Document 1 a space between a substrate and an electrostatic chuck, to which a heat transfer gas such as helium gas is supplied, is divided into the vicinity of the center of the substrate and the vicinity of the edge of the substrate.
  • Techniques for supplying a heat transfer gas at pressure are disclosed. Thereby, the temperature near the center of the substrate and the temperature near the edge of the substrate can be adjusted separately.
  • the present disclosure provides an electrostatic chuck and a substrate processing apparatus that can improve the temperature uniformity of the substrate.
  • an electrostatic chuck comprising a main body, a first ridge, a second ridge, an outer electrode, a first pipe, and a second pipe.
  • the first ridge is annularly provided on the upper surface of the main body.
  • the second protrusion is annularly provided on the upper surface of the main body so as to surround the first protrusion.
  • the outer electrode is provided outside from the inner peripheral surface of the first protrusion when viewed from the upper surface side of the main body, and has an electrostatic force for attracting the substrate to the first protrusion and the second protrusion. generate
  • the first pipe supplies gas to a first area surrounded by the first ridges in the upper surface of the main body.
  • the second pipe supplies gas to a second area surrounded by the first and second protrusions in the upper surface of the main body.
  • substrate temperature uniformity can be improved.
  • FIG. 1 is a system configuration diagram showing an example of a plasma processing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a plasma processing apparatus.
  • FIG. 3 is an enlarged cross-sectional view showing an example of the structure of the substrate supporting portion.
  • FIG. 4 is a plan view showing an example of the structure of the substrate supporting portion.
  • FIG. 5 is a diagram showing an example of the arrangement of electrodes in the electrostatic chuck.
  • FIG. 6 is an enlarged cross-sectional view showing an example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 7 is an enlarged cross-sectional view showing an example of the structure of the electrostatic chuck near the ring assembly in the comparative example.
  • FIG. 1 is a system configuration diagram showing an example of a plasma processing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a plasma processing apparatus.
  • FIG. 3 is an
  • FIG. 8 is a diagram showing an example of temperature distribution of a substrate in a comparative example.
  • FIG. 9 is a diagram showing an example of the temperature distribution of the substrate in this embodiment.
  • FIG. 10 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 11 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 12 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 13 is an enlarged cross-sectional view showing another example of the first ridge.
  • FIG. 14 is an enlarged cross-sectional view showing another example of the first ridge.
  • FIG. 10 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 11 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 15 is an enlarged cross-sectional view showing another example of the first ridge.
  • FIG. 16 is a plan view showing another example of the first ridge.
  • FIG. 17 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 18 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 19 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 20 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 21 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 22 is an enlarged sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 23 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 24 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 25 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 26 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 27 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 28 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck.
  • FIG. 29 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck near the ring assembly.
  • FIG. 30 is an enlarged cross-sectional view showing an example of the structure of the electrostatic chuck near the ring assembly.
  • the space between the substrate and the electrostatic chuck, to which the heat transfer gas such as helium gas is supplied is divided into the vicinity of the center of the substrate and the vicinity of the edge of the substrate, these two spaces are required on the electrostatic chuck.
  • a partition is provided to airtightly partition the two spaces. Since the partition contacts both the substrate and the electrostatic chuck, heat is transferred between the substrate and the electrostatic chuck via the partition. In areas other than the area of the electrostatic chuck where the partition is provided, heat is transferred between the substrate and the electrostatic chuck via a heat transfer gas supplied between the substrate and the electrostatic chuck. Therefore, in the area of the electrostatic chuck provided with the partition wall, heat may be excessively transferred compared to other areas of the electrostatic chuck.
  • a large temperature difference may occur between the portion of the substrate corresponding to the electrostatic chuck area provided with the partition and the portion of the substrate corresponding to the other electrostatic chuck area. If the temperature distribution of the substrate varies greatly, the characteristics of the semiconductor device formed on the substrate may differ depending on the location of the substrate, making it difficult to maintain the quality of the semiconductor device formed on the substrate constant.
  • the present disclosure provides a technology capable of improving the temperature uniformity of the substrate.
  • FIG. 1 is a system configuration diagram showing an example configuration of a plasma processing system 100 according to an embodiment of the present disclosure.
  • plasma processing system 100 includes plasma processing apparatus 1 and controller 2 .
  • the plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support section 11 and a plasma generation section 12 .
  • Plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also has at least one gas inlet for supplying at least one process gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later.
  • the substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.
  • the plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like.
  • various types of plasma generators including, for example, an AC (Alternating Current) plasma generator and a DC (Direct Current) plasma generator may be used.
  • the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz.
  • AC signals include RF signals and microwave signals.
  • the RF signal has a frequency within the range of 200 kHz-150 MHz.
  • the controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 .
  • the control unit 2 may include, for example, a computer 2a.
  • the computer 2a may include, for example, a processing unit (CPU; Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. Processing unit 2a1 can be configured to perform various control operations based on programs stored in storage unit 2a2.
  • the storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof.
  • the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 2 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to one embodiment of the present disclosure.
  • a capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply section 20 , a power supply 30 and an exhaust system 40 . Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into plasma processing chamber 10 .
  • the gas introduction section includes a showerhead 13 .
  • a substrate support 11 is positioned within the plasma processing chamber 10 .
  • the showerhead 13 is arranged above the substrate support 11 .
  • showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 .
  • the plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . Side wall 10a is grounded.
  • the showerhead 13 and substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .
  • the substrate support section 11 includes a body section 111 and a ring assembly 112 .
  • the main body portion 111 has a substrate supporting surface 111 a for supporting the substrate W, which is the central region of the main body portion 111 , and a ring supporting surface 111 b for supporting the ring assembly 112, which is the annular region of the main body portion 111 .
  • Substrate W is sometimes referred to as a wafer.
  • the ring support surface 111b of the body portion 111 surrounds the substrate support surface 111a of the body portion 111 in plan view.
  • the substrate W is placed on the substrate support surface 111a of the body portion 111, and the ring assembly 112 is placed on the ring support surface 111b of the body portion 111 so as to surround the substrate W on the substrate support surface 111a of the body portion 111.
  • the substrate support portion 11 is supported by a cylindrical support portion 17 made of an insulating material such as quartz. Support 17 extends upward from the bottom of plasma processing chamber 10 . Cylindrical cover members 15 and 16 are provided on the outer peripheries of the substrate support portion 11 and the support portion 17 .
  • the body portion 111 includes a base 1111 and an electrostatic chuck 1110 .
  • Base 1111 includes a conductive member.
  • the conductive member of base 1111 functions as a lower electrode.
  • Electrostatic chuck 1110 is arranged on base 1111 .
  • the upper surface of the electrostatic chuck 1110 has a substrate support surface 111a.
  • Ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring.
  • the substrate supporter 11 includes a temperature control module configured to control at least one of the electrostatic chuck 1110, the ring assembly 112, and the substrate W to a target temperature.
  • the temperature control module includes a channel 1112 formed in a base 1111 .
  • a heat transfer medium such as brine or gas whose temperature is controlled is supplied to the flow path 1112 from a chiller unit (not shown) through the pipe 18a.
  • the heat transfer medium supplied to the flow path 1112 flows through the flow path 1112 and is returned to the chiller unit via the pipe 18b.
  • the temperature control module also includes a heater 36, which will be described later.
  • the substrate support section 11 includes a heat transfer gas supply section configured to supply a heat transfer gas such as helium gas between the back surface of the substrate W and the substrate support surface 111a.
  • the showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c.
  • showerhead 13 also includes a conductive member.
  • a conductive member of the showerhead 13 functions as an upper electrode.
  • the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a.
  • SGI Side Gas Injector
  • the gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22 .
  • gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 .
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller.
  • gas supply 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one process gas.
  • Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit.
  • RF power supply 31 is adapted to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to conductive members of substrate support 11, conductive members of showerhead 13, or both. is configured to Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of the plasma generator 12 . Further, by supplying the bias RF signal to the conductive member of the substrate supporting portion 11, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.
  • the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b.
  • the second RF generator 31b is an example of a bias power supply.
  • the first RF generator 31a is coupled via at least one impedance matching circuit to the conductive member of the substrate support 11, the conductive member of the showerhead 13, or both to provide a source RF signal for plasma generation ( source RF power).
  • the source RF signal has a frequency within the range of 13 MHz to 150 MHz.
  • the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to conductive members of the substrate support 11, conductive members of the showerhead 13, or both.
  • the second RF generator 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the bias RF signal has a lower frequency than the source RF signal.
  • the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • One or more bias RF signals generated are provided to the conductive members of the substrate support 11 .
  • at least one of the source RF signal and the bias RF signal may be pulsed.
  • Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 .
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate the first DC signal.
  • the generated first DC signal is applied to the conductive member of substrate support 11 .
  • the first DC signal may be applied to other electrodes, such as electrodes in an electrostatic chuck.
  • the second DC generator 32b is connected to the conductive member of the showerhead 13 and configured to generate the second DC signal.
  • the generated second DC signal is applied to the conductive members of showerhead 13 .
  • the first and second DC signals may be pulsed. Note that the first DC generation unit 32a and the second DC generation unit 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a is provided instead of the second RF generation unit 31b. may be
  • the exhaust system 40 may be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
  • Exhaust system 40 includes a vacuum pump.
  • the pressure regulating valve regulates the pressure in the plasma processing space 10s.
  • Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.
  • FIG. 3 is an enlarged cross-sectional view showing an example of the structure of the substrate supporting portion 11.
  • FIG. 4 is a plan view showing an example of the structure of the substrate supporting portion 11.
  • FIG. 5 is a diagram showing an example of the arrangement of electrodes in the electrostatic chuck 1110.
  • FIG. 3 shows the substrate supporting portion 11 on which the substrate W is placed.
  • the AA section of FIG. 4 corresponds to FIG.
  • the electrostatic chuck 1110 has a body portion 50 .
  • a first ridge 50 a and a second ridge 50 b are provided on the upper surface of the body portion 50 .
  • the first ridge 50a is an example of an inner annular ridge
  • the second ridge 50b is an example of an outer annular ridge.
  • the area surrounded by the first ridges 50a is the central surface area 510
  • the area between the first ridges 50a and the second ridges 50b is the edge surface area 511.
  • the first ridge 50a is provided in an annular shape, for example, as shown in FIG.
  • the second ridge 50b is provided in an annular shape so as to surround the first ridge 50a.
  • the substrate W when the substrate W is placed on the electrostatic chuck 1110, the substrate W, the body portion 50, and the first ridges 50a are placed between the substrate W and the electrostatic chuck 1110.
  • a tubular first space 51a is formed to be surrounded.
  • the first space 51a is an example of a first recess.
  • the substrate W, the body portion 50, and the first ridges 50a are placed between the substrate W and the electrostatic chuck 1110.
  • a second annular space 51b surrounded by the second ridge 50b.
  • the second space 51b is an example of a second recess.
  • a plurality of protrusions 52 having the same height as the first protrusions 50a and the second protrusions 50b are provided in the area surrounded by the first protrusions 50a.
  • the substrate W is supported by the first ridge 50a, the second ridge 50b, and the plurality of protrusions 52.
  • the surfaces of the tops of the first protrusions 50a, the second protrusions 50b, and the plurality of protrusions 52 are substrate support surfaces 111a.
  • the first ridge 50a, the second ridge 50b, and the plurality of protrusions 52 are made of, for example, ceramics such as alumina ( Al2O3 ) , SiC, and AlN; polymers such as polyimide; .
  • a heat transfer gas such as helium gas is supplied to the first space 51a through a pipe 53a and an opening 54a.
  • a heat transfer gas is an example of a heat transfer medium.
  • a liquid or a solid may be used in addition to the heat transfer gas.
  • As the liquid or solid (heat transfer layer) for example, before or after mounting the substrate W, at least one of a liquid layer and a deformable solid layer is formed on the upper surface of the substrate supporting portion 11. It is conceivable to form a deformable heat transfer layer.
  • the technical content of Japanese Patent Application Nos. 2021-127619 and 2021-127644 is incorporated by reference to the extent not inconsistent with the content disclosed in the present application.
  • a heat transfer gas such as helium gas is supplied to the second space 51b via a pipe 53b and an opening 54b.
  • the pipe 53a is an example of a first heat medium flow path
  • the pipe 53b is an example of a second heat medium flow path.
  • the pipe 53a is provided with a first control valve 530a
  • the pipe 53b is provided with a second control valve
  • the pipe 53c is provided with a third control valve.
  • the pipe 53a supplies the heat transfer gas to the region of the upper surface of the main body 50 surrounded by the first ridges 50a.
  • the first control valve 530a controls the flow rate or pressure of the first heat medium supplied to the first space 51a through the pipe 53a.
  • the pipe 53b supplies the heat transfer gas to the region of the upper surface of the main body 50 surrounded by the first ridge 50a and the second ridge 50b.
  • the second control valve 530b controls the flow rate or pressure of the second heat medium supplied to the second space 51b through the pipe 53b.
  • the pipe 53a is an example of a first pipe
  • the pipe 53b is an example of a second pipe.
  • the area of the upper surface of the main body 50 surrounded by the first ridges 50a is an example of the first area
  • the upper surface of the main body 50 surrounded by the first ridges 50a and the second ridges 50b. is an example of the second area.
  • the heat transfer rate between the electrostatic chuck 1110 and the substrate W may be further controlled by controlling the voltage of .
  • the second electrode 55b (inner electrostatic electrode) and the third The heat transfer rate between the electrostatic chuck 1110 and the substrate W may be controlled by voltage control of the electrode 55c (outer electrostatic electrode).
  • the pressure of the heat transfer gas supplied to the first space 51a and the pressure of the heat transfer gas supplied to the second space 51b are independently controlled.
  • the pressure of the heat transfer gas supplied to the second space 51b is higher than the pressure of the heat transfer gas supplied to the first space 51a.
  • the type of heat transfer gas supplied to the first space 51a and the type of heat transfer gas supplied to the second space 51b may be different.
  • the heat transfer gas supplied to the second space 51b may be a gas having a higher thermal conductivity than the heat transfer gas supplied to the first space 51a. Thereby, the controllability of the temperature near the edge of the substrate W can be improved.
  • the ring support surface 111b of the electrostatic chuck 1110 is provided with a recess 51c.
  • a heat transfer gas such as helium gas is supplied to the concave portion 51c through a pipe 53c and an opening 54c.
  • the third control valve 530c controls the flow rate or pressure of the third heat medium (heat transfer gas) supplied to the recess 51c through the pipe 53c.
  • the pressure of the heat transfer gas supplied to the recess 51c and the pressure of the heat transfer gas supplied to the first space 51a and the second space 51b are controlled by the first control valve 530a, the second control valve 530b, and third control valve 530c, respectively.
  • a first electrode 55a, a second electrode 55b, a third electrode 55c, a fourth electrode 55d, and a fifth electrode 55e are provided in the body portion 50.
  • the second electrode 55b is an example of an inner electrostatic electrode
  • the third electrode 55c is an example of an outer electrostatic electrode.
  • the first electrode 55a and the second electrode 55b are examples of inner electrodes
  • the third electrode 55c is an example of an outer electrode.
  • the first electrode 55a and the second electrode 55b are arranged in a region corresponding to the first space 51a when viewed from the upper surface side of the main body 50, as shown in FIG. 5, for example.
  • the second electrode 55b is formed in an annular shape and arranged around the first electrode 55a.
  • the third electrode 55c is arranged in a region corresponding to the second space 51b when viewed from the upper surface side of the body portion 50 .
  • the third electrode 55c is provided outside (on the side of the second ridge 50b) from the inner peripheral surface of the first ridge 50a when viewed from the upper surface side of the main body 50.
  • the fourth electrode 55d and the fifth electrode 55e are formed in an annular shape and are arranged within the ring support surface 111b when viewed from the upper surface side of the main body portion 50 .
  • the second electrode 55b, the third electrode 55c, the fourth electrode 55d, and the fifth electrode 55e may be divided into two or more in the circumferential direction.
  • a power supply 57a is connected to the first electrode 55a, a power supply 57b is connected to the second electrode 55b, a power supply 57c is connected to the third electrode 55c, and a fourth electrode 55d is connected. is connected to a power source 57d, and the fifth electrode 55e is connected to a power source 57d.
  • Power supply 57 a includes filter 570 , switch 571 and variable DC power supply 572 .
  • Power supply 57b, power supply 57c, power supply 57d, and power supply 57e are of similar construction to power supply 57a.
  • the first electrode 55a generates electrostatic force according to the voltage applied from the power source 57a.
  • the second electrode 55b generates electrostatic force according to the voltage applied from the power source 57b.
  • the third electrode 55c generates electrostatic force according to the voltage applied from the power supply 57c. Electrostatic force generated by the first electrode 55a, the second electrode 55b, and the third electrode 55c causes the substrate W to move the first ridge 50a, the second ridge 50b, and the plurality of protrusions 52. is held by adsorption.
  • the voltage applied to the second electrode 55b (inner electrostatic electrode) is an example of a first voltage
  • the voltage applied to the third electrode 55c is an example of a second voltage. be.
  • the first voltage applied to the second electrode 55b (inner electrostatic electrode) and the second voltage applied to the third electrode 55c (outer electrostatic electrode) are DC voltages.
  • the disclosed technique is not limited to this.
  • the first voltage and the second voltage may be alternating current (AC) voltages.
  • the first voltage and the second voltage are AC voltages, for example, the second electrode 55b and the third electrode 55c are divided into n pieces (n ⁇ 2) in the circumferential direction, and two or more of which phases are different from each other.
  • n-phase AC voltage may be applied.
  • the n-phase AC voltage may be applied based on the self-bias voltage.
  • the technical content of Japanese Patent Application Laid-Open No. 2021-068880 is incorporated by reference to the extent that it does not contradict the content disclosed in the present application.
  • the voltage applied to the third electrode 55c is greater than the voltage applied to the first electrode 55a and the second electrode 55b.
  • the adsorption force between the portion of the substrate W corresponding to the first electrode 55a and the second electrode 55b and the first ridge 50a and the plurality of protrusions 52 corresponds to the third electrode 55c.
  • the attraction force between the portion of the substrate W that is to be held and the second ridge 50b is increased. Thereby, the controllability of the temperature near the edge of the substrate W can be improved.
  • the power supply 57d and the power supply 57e apply DC voltages to the fourth electrode 55d and the fifth electrode 55e, respectively, so that a predetermined potential difference is generated between the fourth electrode 55d and the fifth electrode 55e. do.
  • the set potential of each of the fourth electrode 55d and the fifth electrode 55e may be any of positive potential, negative potential, and 0V.
  • the potential of the fourth electrode 55d may be set to a positive potential
  • the potential of the fifth electrode 55e may be set to a negative potential.
  • the potential difference between the fourth electrode 55d and the fifth electrode 55e may be created using a single DC power supply instead of two DC power supplies.
  • a heater 56 a and a heater 56 b are provided in the electrostatic chuck 1110 .
  • a heater power source 58a is connected to the heater 56a.
  • a heater power supply 58b is connected to the heater 56b.
  • the heater 56a heats the substrate W placed on the substrate support surface 111a by generating heat according to the power supplied from the heater power source 58a.
  • the heater 56b heats the ring assembly 112 placed on the ring support surface 111b by generating heat according to the power supplied from the heater power source 58b.
  • the heater 56 a and the heater 56 b may be provided between the electrostatic chuck 1110 and the base 1111 . Also, each of the heater 56a and the heater 56b may be divided into two or more.
  • FIG. 6 is an enlarged cross-sectional view showing an example of the structure of electrostatic chuck 1110 near ring assembly 112 .
  • the substrate W is placed on the electrostatic chuck 1110 such that the edge of the substrate W is positioned apart from the outermost periphery of the upper surface of the main body 50 by ⁇ L0.
  • ⁇ L0 is, for example, 1 to 2 mm.
  • the first protrusion 50a is formed on the upper surface of the body portion 50 so that the outermost periphery of the first protrusion 50a is located at a distance of ⁇ L1 from the outermost periphery of the upper surface of the body portion 50 toward the center of the upper surface of the body portion 50.
  • ⁇ L1 is, for example, within 5 mm.
  • ⁇ L1 is preferably within 4 mm.
  • ⁇ L1 is more preferably within 3 mm.
  • the third electrode 55c is arranged in the electrostatic chuck 1110 so that the innermost circumference of the third electrode 55c is positioned apart from the innermost circumference of the first ridge 50a toward the ring assembly 112 by ⁇ L2. ing. That is, when the width of the first protrusion 50a is ⁇ W, the third electrode 55c is arranged such that the innermost circumference of the third electrode 55c is located at a position less than ( ⁇ L1+ ⁇ W) from the outermost circumference of the electrostatic chuck 1110. are placed in the electrostatic chuck 1110 at .
  • the third electrode 55c is positioned such that the innermost circumference of the third electrode 55c is less than 5.5 mm from the outermost circumference of the electrostatic chuck 1110.
  • ⁇ L2 is, for example, 0.1 mm.
  • ⁇ L2 may be shorter than 0.1 mm or 0 mm.
  • the third electrode 55c is electrostatically arranged so that the outermost circumference of the third electrode 55c is positioned ⁇ L4 away from the innermost circumference of the second ridge 50b to the ring assembly 112 side. Located within chuck 1110 . That is, when viewed from the upper surface side of the body portion 50, part of the third electrode 55c is arranged in the area of the second ridge 50b.
  • the second electrode 55b is arranged in the electrostatic chuck 1110 such that the outermost circumference of the second electrode 55b is located at a position away from the innermost circumference of the first ridge 50a toward the center of the upper surface of the main body 50 by ⁇ L3.
  • ⁇ L3 is, for example, 0.1 mm.
  • ⁇ L3 may be shorter than 0.1 mm or 0 mm.
  • FIG. 7 is an enlarged cross-sectional view showing an example of the structure of the electrostatic chuck 1110' near the ring assembly 112 in the comparative example.
  • the outermost circumference of the first protrusion 50a' is positioned at a distance ⁇ L1' longer than ⁇ L1 from the outermost circumference of the upper surface of the main body portion 50 toward the center of the upper surface of the main body portion 50. It is formed on the upper surface of the main body part 50 so as to be.
  • .DELTA.L1' is 14 mm, for example.
  • the second electrode 55b' is arranged below the first space 51a', the first ridge 50a', and the second space 51b'.
  • the temperature distribution of the substrate W becomes, for example, as shown in FIG.
  • FIG. 8 is a diagram showing an example of the temperature distribution of the substrate W in the comparative example.
  • the temperature distribution of the substrate W in the radial direction of the substrate W is indicated by the relative temperature with the temperature at the center of the substrate W as the reference.
  • the substrate W when the substrate W is attracted to the electrostatic chuck 1110 by the electrostatic force generated by the second electrode 55b', the substrate W strongly contacts the first ridge 50a'.
  • the amount of heat transfer between the substrate W and the electrostatic chuck 1110 in the portion that is in strong contact with the first ridge 50a′ is the same as the amount of heat transfer between the substrate W and the electrostatic chuck 1110 in the portion that is not in contact with the first ridge 50a′. greater than the amount of heat transferred to and from 1110.
  • the temperature of the heater 56 and the temperature of the base 1111 are adjusted according to the temperature of the portion of the substrate W that is not in contact with the first ridge 50a', the temperature of the substrate W that is in contact with the first ridge 50a' is reduced.
  • the temperature of the substrate W at the portion may deviate greatly.
  • the influence of heat from the outside such as plasma is greater than the heat from the heater 56a and the base 1111.
  • the temperature of the substrate W near the edge may be higher than the temperature of the substrate W near the center, as shown in FIG. 8, for example.
  • the outermost circumference of the first protrusion 50a' extends from the outermost circumference of the upper surface of the main body 50 toward the center of the upper surface of the main body 50, as shown in FIG.
  • the temperature variation ⁇ T1 of the substrate W is large near the edge.
  • the temperature of the substrate W is lowest at a position 15 mm from the edge of the substrate W (that is, a position 135 mm from the center of the substrate W), which is the position where the first protrusion 50a′ is provided. , and the temperature of the substrate W is maximum at the edge of the substrate W.
  • the temperature distribution of the substrate W in this embodiment is, for example, as shown in FIG.
  • FIG. 9 is a diagram showing an example of the temperature distribution of the substrate W in this embodiment.
  • the temperature distribution of the substrate W in the radial direction of the substrate W is indicated by the relative temperature with the temperature at the center of the substrate W as the reference.
  • the third electrode 55c is arranged outside the innermost circumference of the first ridge 50a, and the second electrode 55b is arranged inside the innermost circumference of the first ridge 50a. placed.
  • the attraction force between the substrate W and the first ridges 50a can be kept low, and heat is transferred between the substrate W and the electrostatic chuck 1110 at the portion in contact with the first ridges 50a. You can reduce the amount. As a result, the temperature deviation of the substrate W at the portion in contact with the first ridge 50a can be reduced.
  • the outermost periphery of the first protrusion 50a is positioned at a distance ⁇ L1 toward the center of the substrate supporting surface 111a from the outermost periphery of the substrate supporting surface 111a. It is formed on the substrate supporting surface 111a.
  • ⁇ L1 is, for example, 3 mm or less.
  • the temperature of the substrate W at the portion in contact with the first ridge 50a can be controlled to be lower than the temperature of the substrate W at the portion not in contact with the first ridge 50a. Referring to FIG.
  • the temperature of the substrate W is minimized at a position 4 mm from the edge of the substrate W (that is, a position 146 mm from the center of the substrate W), which is the position where the first ridge 50a is provided. , and the temperature of the substrate W is maximum at the edge of the substrate W.
  • ⁇ T2 which is smaller than ⁇ T1. Therefore, in the electrostatic chuck 1110 of this embodiment, the temperature uniformity of the substrate W can be improved.
  • the outermost circumference of the third electrode 55c is arranged closer to the ring assembly 112 than the innermost circumference of the second ridge 50b.
  • the magnitude of the voltage applied to the third electrode 55c is greater than the magnitude of the voltage applied to the first electrode 55a and the second electrode 55b.
  • the pressure of the heat transfer gas supplied to the first space 51a is set higher than the pressure of the heat transfer gas supplied to the second space 51b.
  • the electrostatic chuck 1110 of the present embodiment can improve the controllability of the temperature near the edge of the substrate W, and improve the uniformity of the temperature of the substrate W.
  • the temperature near the edge of the substrate W can be controlled by using a gas having a higher thermal conductivity than the heat transfer gas supplied to the first space 51a as the heat transfer gas supplied to the second space 51b. It is possible to further improve the performance.
  • the electrostatic chuck 1110 in this embodiment includes the main body 50, the first ridges 50a, the second ridges 50b, the third electrode 55c, the pipes 53a, and the pipes 53b.
  • the first ridge 50 a is annularly provided on the upper surface of the body portion 50 .
  • the second ridge 50b is annularly provided on the upper surface of the body portion 50 so as to surround the first ridge 50a.
  • the third electrode 55c is provided outside from the inner peripheral surface of the first protrusion 50a when viewed from the upper surface side of the main body 50, and the substrate is provided on the first protrusion 50a and the second protrusion 50b. An electrostatic force is generated to attract W.
  • the pipe 53a supplies the heat transfer gas to a first area of the upper surface of the main body 50 surrounded by the first ridges 50a.
  • the pipe 53b supplies the heat transfer gas to a second area of the upper surface of the main body 50 surrounded by the first ridge 50a and the second ridge 50b. Thereby, the uniformity of the temperature of the substrate W can be improved.
  • a part of the third electrode 55c when viewed from the upper surface side of the main body portion 50, a part of the third electrode 55c is the It may overlap with at least one of them.
  • the electrostatic chuck 1110 in the above-described embodiment includes a first electrode 55a and a second electrode 55b provided inside the body portion 50 surrounded by the first ridges 50a.
  • the voltage applied to the third electrode 55c is greater than the voltage applied to the first electrode 55a and the second electrode 55b.
  • the pressure of the heat transfer gas supplied to the second area is higher than the pressure of the heat transfer gas supplied to the first area. Therefore, the uniformity of the temperature of the substrate W can be further improved.
  • the heat transfer gas supplied to the second area and the heat transfer gas supplied to the first area may be different types of gases.
  • the heat transfer gas supplied to the second region may be a gas having a higher thermal conductivity than the heat transfer gas supplied to the first region.
  • part of the third electrode 55c when viewed from the upper surface side of the body portion 50, part of the third electrode 55c is arranged in the region of the second ridge 50b.
  • the vicinity of the edge of the substrate W can be strongly attracted to the second protrusion 50b, and the temperature controllability of the vicinity of the edge of the substrate W can be improved.
  • the outermost circumference of the first protrusion 50a is arranged within 5 mm from the outermost circumference of the upper surface of the body portion 50. Thereby, variations in the temperature distribution of the substrate W can be suppressed.
  • the plasma processing apparatus 1 in the above-described embodiment includes a plasma processing chamber 10, an electrostatic chuck 1110, and a power supply 57.
  • An electrostatic chuck 1110 is provided within the plasma processing chamber 10 and a substrate W is placed thereon.
  • the electrostatic chuck 1110 has a body portion 50, a first ridge 50a, a second ridge 50b, a third electrode 55c, a pipe 53a, and a pipe 53b.
  • the first ridge 50 a is annularly provided on the upper surface of the body portion 50 .
  • the second ridge 50b is annularly provided on the upper surface of the body portion 50 so as to surround the first ridge 50a.
  • the third electrode 55c is provided inside the body portion 50 and outside from the inner peripheral surface of the first protrusion 50a when viewed from the upper surface side of the body portion 50.
  • An electrostatic force is generated for attracting the substrate W to the ridges 50b.
  • the pipe 53a supplies the heat transfer gas to a first area of the upper surface of the main body 50 surrounded by the first ridges 50a.
  • the pipe 53b supplies the heat transfer gas to a second area of the upper surface of the main body 50 surrounded by the first ridge 50a and the second ridge 50b. Thereby, the uniformity of the temperature of the substrate W can be improved.
  • the third electrode 55c is positioned such that the innermost circumference of the third electrode 55c is spaced apart from the innermost circumference of the first ridge 50a by ⁇ L2 toward the ring assembly 112, and The electrode 55c is arranged in the electrostatic chuck 1110 so that the outermost circumference of the electrode 55c is located at a distance of ⁇ L4 toward the ring assembly 112 from the innermost circumference of the second ridge 50b.
  • the technology disclosed is not limited to this.
  • the outermost circumference of the third electrode 55c is closer to the center side of the electrostatic chuck 1110 than the innermost circumference of the second ridge 50b. They may be arranged in the electrostatic chuck 1110 so as to be separated by ⁇ L5.
  • ⁇ L5 is, for example, 0.1 mm.
  • ⁇ L5 may be shorter than 0.1 mm or may be 0 mm.
  • the third electrode 55c is arranged such that the innermost circumference of the third electrode 55c is ⁇ L6 toward the ring assembly 112 from the outermost circumference of the first ridge 50a. They may be arranged in the electrostatic chuck 1110 so as to be spaced apart.
  • ⁇ L6 is, for example, 0.1 mm.
  • ⁇ L6 may be shorter than 0.1 mm or may be 0 mm.
  • the third electrode 55c is arranged such that the innermost circumference of the third electrode 55c is ⁇ L6 toward the ring assembly 112 from the outermost circumference of the first ridge 50a.
  • the outermost circumference of the third electrode 55c is separated from the innermost circumference of the second ridge 50b toward the center of the electrostatic chuck 1110 by ⁇ L5. may be placed.
  • the first ridge 50a is formed of the same member as the main body portion 50, but the disclosed technology is not limited to this.
  • a member 500 having a lower thermal conductivity than the body portion 50 may be provided on at least a portion of the first ridge 50a.
  • an annular member 500 is provided on the top of the first ridge 50a.
  • half of the body portion 50 is replaced with an annular member 500 in the width direction of the first protrusion 50a.
  • the connecting portion between the first ridge 50 a and the main body portion 50 is replaced with an annular member 500 .
  • FIG. 13 a member 500 having a lower thermal conductivity than the body portion 50 may be provided on at least a portion of the first ridge 50a.
  • an annular member 500 is provided on the top of the first ridge 50a.
  • half of the body portion 50 is replaced with an annular member 500 in the width direction of the first protrusion 50a.
  • the connecting portion between the first ridge 50 a and the main body portion 50 is replaced with an annular
  • portions formed of the same member as the body portion 50 and portions formed of the member 500 are alternately arranged in the extending direction of the first ridge 50a.
  • the first ridges 50a of the structure illustrated in FIGS. 13-16 reduce the amount of heat transfer between the substrate W and the electrostatic chuck 1110 via the first ridges 50a, thereby reducing the edge of the substrate W. It is possible to suppress variations in the temperature of the substrate W in the vicinity.
  • the electrostatic chuck 1110 includes an electrode 60a for supplying bias power to the substrate W and an electrode 60b for supplying bias power to the ring assembly 112, as shown in FIG. and may be provided.
  • Electrode 60a is an example of a bias electrode.
  • FIG. 17 is an enlarged cross-sectional view showing another example of the structure of the electrostatic chuck 1110. As shown in FIG. The electrode 60a is provided within the electrostatic chuck 1110 corresponding to the area where the substrate W is placed, and the electrode 60b is provided within the electrostatic chuck 1110 corresponding to the area where the ring assembly 112 is placed. In the example of FIG.
  • source RF power is supplied to the base 1111 from the first RF generator 31a through a filter (not shown), and the electrodes 60a and 60b are supplied from the second RF generator 31b through a filter (not shown). is supplied with bias RF power.
  • the bias RF power supplied to electrode 60a and electrode 60b is independently controlled. Accordingly, the state of the plasma in the region where the substrate W is arranged and the state of the plasma in the region where the ring assembly 112 is arranged can be independently controlled according to the supplied bias power.
  • the bias RF power to the region where the ring assembly 112 is located may be supplied to electrode 55e.
  • the bias RF power supplied from the second RF generator 31b through a filter (not shown) is supplied through the capacitor 70 to the fourth electrode 55d, and through the capacitor 71 to the fourth electrode 55d. 5 electrodes 55e. Since the electrode 60b is not provided in the example of FIG. 18, the structure of the electrostatic chuck 1110 can be simplified.
  • the bias RF power to the region where the substrate W is arranged may be supplied to the base 1111 without providing the electrode 60a, as shown in FIG. Since the electrode 60a is not provided in the example of FIG. 18, the structure of the electrostatic chuck 1110 can be further simplified.
  • source RF power from the first RF generator 31a is further supplied to the fourth electrode 55d and the fifth electrode 55e. good too.
  • the source RF power supplied to the base 1111 and the source RF power supplied to the fourth electrode 55d and the fifth electrode 55e are independently controlled.
  • a common electrical path 75 is connected to the first RF generator 31a and the second RF generator 31b.
  • a first electrical path 76 and a second electrical path 77 branch from a common electrical path 75 .
  • a first electrical path 76 is connected to the base 1111 .
  • a second electrical path 77 is connected to one end of a variable impedance circuit 72 such as a variable capacitor. The other end of the variable impedance circuit 72 is connected via the capacitor 70 to the fourth electrode 55d. Also, the other end of the variable impedance circuit 72 is connected through the capacitor 71 to the fifth electrode 55e.
  • the first RF generator 31a and the second RF generator 31b can be shared, the number of parts can be reduced as compared with the example of FIG.
  • the electrostatic chuck 1110 is divided into a first electrostatic chuck 1110a and a second electrostatic chuck 1110b, and the base 1111 is divided as shown in FIG. , a first base 1111a and a second base 1111b.
  • the electrostatic chuck 1110 may be divided into a first electrostatic chuck 1110a and a second electrostatic chuck 1110b, as shown in FIG. 23, for example.
  • the base 1111 is formed with a groove 1111c.
  • the groove 1111 c is open on the upper surface of the base 1111 .
  • the bottom of the groove 1111c is located between the upper end opening of the groove 1111c and the lower surface of the base 1111.
  • the groove 1111c extends along and below the gap between the first electrostatic chuck 1110a and the second electrostatic chuck 1110b.
  • a capacitor 73 is provided between the common electrical path 75 and the first electrical path 76, as shown in FIG. 24, for example. may be connected to the second electrode 55b and the third electrode 55c.
  • the first electrical path 76 is also connected to the first electrode 55a.
  • the second RF generator 31b is connected to the common electrical path 75, and the first RF generator 31a is connected to the base 1111, as shown in FIG. may be
  • the first electrical path 76 is connected to the heater 56a, and the other end of the variable impedance circuit 72 is connected to the heater 56b via the capacitor 74, as shown in FIG. may be connected.
  • the electrode 60a is arranged between the first electrode 55a and the second electrode 55b, and the electrode 60b is arranged between the fourth electrode 55d. and the fifth electrode 55e.
  • the electrode 60a may be arranged between the second electrode 55b and the third electrode 55c.
  • the electrode 60a is arranged in the electrostatic chuck 1110 at the same height as the second electrode 55b and the third electrode 55c, and the electrode 60b is arranged in the electrostatic chuck 1110 above the fourth electrode 55d. and the fifth electrode 55e.
  • the electrode 60b may be arranged closer to the outer periphery of the electrostatic chuck 1110 than the fourth electrode 55d and the fifth electrode 55e, as shown in FIG. 28, for example. .
  • the cross-sectional shape of the ring assembly 112 in the above-described embodiment is such that, as shown in FIG. The width of the narrow part is narrow.
  • the top surface of the ring assembly 112 in the above-described embodiment is approximately the same height as the top surface of the substrate W placed on the electrostatic chuck 1110 .
  • the technology disclosed is not limited to this.
  • the area of the electrostatic chuck 1110 on which the ring assembly 112 is placed may be approximately the same height as the area of the electrostatic chuck 1110 on which the substrate W is placed. good. In the example of FIG.
  • the cross-sectional shape of the ring assembly 112 is such that the portion above the substrate W placed on the electrostatic chuck 1110 protrudes above the edge portion of the substrate W. ing.
  • the width of the second protrusion 50b is wider than the width of the second protrusion 50b in the above-described embodiment, and the outer wall of the second protrusion 50b is the electrostatic chuck 1110. is located outside the edge of the substrate W placed on the .
  • the third electrode 55c (outer electrostatic electrode) extends outside the edge of the substrate W placed on the electrostatic chuck 1110 .
  • the substrate W is placed on the electrostatic chuck 1110, the substrate W is placed on the electrostatic chuck 1110 while the ring assembly 112 is lifted upward. can be changed back to When the substrate W is unloaded from the electrostatic chuck 1110, the substrate W may be unloaded from the electrostatic chuck 1110 after the ring assembly 112 is lifted.
  • the top surface of the first ridge 50a is approximately the same height as the top surface of the second ridge 50b, as shown in FIG. 6, for example. It is not limited to this.
  • the height h1 of the first protrusion 50a is equal to that of the second protrusion 50b. It may be lower than the height h2.
  • the first ridges 50a and the substrate W are not in contact with each other, so that cooling singularities can be reduced compared to the case where they are in contact with each other.
  • the plasma processing apparatus 1 that performs processing using capacitively coupled plasma (CCP) was described as an example of the plasma source, but the plasma source is not limited to this.
  • plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave excited surface wave plasma (SWP), electron cycloton resonance plasma (ECP), and helicon wave excited plasma (HWP). be done.
  • the plasma processing apparatus 1 was described as an example of the substrate processing apparatus, but the technology disclosed is not limited to this. In other words, the technology disclosed herein can be applied to other substrate processing apparatuses that do not use plasma as long as the substrate processing apparatus includes the substrate supporting portion 11 having a function of controlling the temperature of the substrate W.
  • FIG. 1 the plasma processing apparatus 1 was described as an example of the substrate processing apparatus, but the technology disclosed is not limited to this. In other words, the technology disclosed herein can be applied to other substrate processing apparatuses that do not use plasma as long as the substrate processing apparatus includes the substrate supporting portion 11 having a function of controlling the temperature of the substrate W.
  • an electrostatic force is provided outside from the inner peripheral surface of the first ridge, and is for attracting the substrate to the first ridge and the second ridge.
  • an outer electrode that generates a first pipe that supplies gas to a first region surrounded by the first ridge in the upper surface of the main body;
  • An electrostatic chuck comprising: a second pipe that supplies gas to a second region surrounded by the first ridge and the second ridge in the upper surface of the main body.
  • Appendix 3 An inner electrode provided inside the main body surrounded by the first ridge, 3.
  • a substrate is placed on top of the first ridge and the second ridge, the substrate is treated with plasma; 3.
  • Appendix 7 The electrostatic chuck according to any one of appendices 1 to 6, wherein a part of the outer electrode is arranged in the region of the second ridge when viewed from the upper surface side of the main body.
  • Appendix 8 The electrostatic chuck according to any one of Appendices 1 to 7, wherein the outermost circumference of the first ridge is arranged within 5 mm from the outermost circumference of the upper surface of the main body.
  • Appendix 9 The electrostatic chuck according to any one of Appendices 1 to 8, wherein at least part of the first ridge is provided with a member having a lower thermal conductivity than the member forming the main body.
  • a substrate is placed on top of the first ridge and the second ridge, the substrate is treated with plasma; 10.
  • (Appendix 11) a chamber; an electrostatic chuck provided in the chamber and on which the substrate is placed; with power supply and
  • the electrostatic chuck is a main body; a first ridge annularly provided on the upper surface of the main body; a second protrusion annularly provided on the upper surface of the main body so as to surround the first protrusion;
  • the substrate When viewed from the upper surface side of the main body, the substrate is provided inside the main body and outside from the inner peripheral surface of the first ridge, and the substrate is attached to the first ridge and the second ridge.
  • an outer electrode that generates an electrostatic force for adsorption; a first pipe that supplies gas to a first region surrounded by the first ridge in the upper surface of the main body; a second pipe that supplies gas to a second region surrounded by the first ridge and the second ridge in the upper surface of the main body,
  • the substrate processing apparatus wherein the power source applies a voltage to the outer electrode.
  • the electrostatic chuck has a first heat medium flow path and a second heat medium flow path through which a second heat medium flows, the electrostatic chuck having an upper surface having an inner annular ridge and an outer annular ridge, The upper surface has a central surface area surrounded by the inner annular ridge and an edge surface area between the inner annular ridge and the outer annular ridge, with a second surface area formed in the central surface area.
  • One recess is in fluid communication with the first heat transfer flow channel, a second recess formed in the edge surface region is in fluid communication with the second heat transfer flow channel, and the a substrate support, wherein the central surface region has a plurality of protrusions; an inner electrostatic electrode and an outer electrostatic electrode disposed within the electrostatic chuck, the inner electrostatic electrode extending across the central surface region in plan view, the outer electrostatic electrode being planar; an inner electrostatic electrode and an outer electrostatic electrode extending visually across the edge surface area; at least one power source configured to apply a first voltage to the inner electrostatic electrode and a second voltage to the outer electrostatic electrode; The flow rate or pressure of the first heat medium supplied to the first recess through the first heat medium flow path is controlled, and the second heat medium flow path is supplied to the second recess through the second heat medium flow path. at least one control valve configured to control the flow rate or pressure of the supplied second heat transfer medium;
  • a substrate processing apparatus comprising:
  • Appendix 14 14. The substrate processing apparatus according to appendix 12 or 13, wherein the second voltage is higher than the first voltage.
  • Appendix 15 15. The substrate processing apparatus according to any one of appendices 12 to 14, further comprising a bias power supply configured to supply bias power to at least one of the inner electrostatic electrode and the outer electrostatic electrode. .
  • Appendix 17 a bias electrode disposed within the electrostatic chuck; 15.
  • the first heat medium is a first heat transfer gas
  • the second heat medium is a second heat transfer gas
  • the substrate processing apparatus according to any one of Appendixes 12 to 17, wherein the second heat transfer gas has a pressure higher than that of the first heat transfer gas.
  • Appendix 20 20.
  • (Appendix 21) 21 The substrate processing apparatus according to any one of appendices 12 to 20, wherein the distance from the outer circumferential surface of the inner annular ridge to the outer circumference of the upper surface of the electrostatic chuck is within 15 mm.
  • Appendix 24 the electrostatic chuck comprising a first material having a first thermal conductivity; 24.
  • the substrate processing apparatus according to any one of appendices 12 to 23, wherein the inner annular ridge includes a second material having a second thermal conductivity lower than the first thermal conductivity.
  • the height of the inner annular ridge is lower than the height of the outer annular ridge when the lowest portion of the surface of the second recess is used as a reference. Substrate processing equipment.
  • a second recess formed in the edge surface region is in fluid communication with the second heat transfer flow channel, and the central surface region includes a plurality of heat transfer flow channels.
  • a main body having a protrusion; an inner electrostatic electrode and an outer electrostatic electrode disposed within the body portion, the inner electrostatic electrode extending across the central surface region in plan view, and the outer electrostatic electrode, in plan view an inner electrostatic electrode and an outer electrostatic electrode extending across the edge surface area; an electrostatic chuck.
  • (Appendix 29) a main body; a first ridge annularly provided on the upper surface of the main body; a second protrusion annularly provided on the upper surface of the main body so as to surround the first protrusion; an outer electrode that is provided outward from the inner peripheral surface of the first ridge in plan view and generates an electrostatic force for attracting the substrate to the first ridge and the second ridge; a first heat medium flow path that supplies a heat medium to a first area surrounded by the first ridges in the upper surface of the main body; An electrostatic chuck, comprising a second heat medium flow path for supplying a heat medium to a second area surrounded by the first ridge and the second ridge in the upper surface of the main body.
  • Plasma processing system 1 Plasma processing apparatus 2 Control unit 2a Computer 2a1 Processing unit 2a2 Storage unit 2a3 Communication interface 10 Plasma processing chamber 10a Side wall 10e Gas outlet 10s Plasma processing space 11 Substrate support 111 Main unit 111a Substrate support surface 111b Ring support surface 1110 Electrostatic chuck 1110a First electrostatic chuck 1110b Second electrostatic chuck 1111 Base 1111a First base 1111b Second base 1111c Groove 1112 Channel 112 Ring assembly 12 Plasma generator 13 Shower Head 13a Gas supply port 13b Gas diffusion chamber 13c Gas introduction port 15 Cover member 16 Cover member 17 Support portion 18 Piping 20 Gas supply portion 21 Gas source 22 Flow controller 30 Power source 31 RF power source 31a First RF generator 31b Second RF generator 32 DC power supply 32a First DC generator 32b Second DC generator 40 Exhaust system 50 Main body 50a First ridge 50b Second ridge 51a First space 51b Second space 51c Concave portion 52 Protruding portion 53a Piping 53b Piping 53c Piping 54a Opening

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Abstract

Un mandrin électrostatique selon la présente invention comprend une partie corps, une première arête, une seconde arête, une électrode extérieure, une première tuyauterie et une seconde tuyauterie. La première arête est disposée sous une forme annulaire sur la surface supérieure de la partie corps. La seconde arête est disposée sous une forme annulaire entourant la première arête sur la surface supérieure de la partie corps. L'électrode externe est disposée vers l'extérieur de la surface circonférentielle interne de la première arête lorsqu'elle est vue depuis le côté de surface supérieure de la partie corps et génère une force électrostatique pour faire adhérer un substrat à la première arête et à la seconde arête. La première tuyauterie fournit un gaz à une première région entourée par la première arête dans la surface supérieure de la partie corps. La seconde tuyauterie fournit un gaz à une seconde région entourée par la première arête et la seconde arête dans la surface supérieure de la partie corps.
PCT/JP2022/016272 2021-04-09 2022-03-30 Mandrin électrostatique et dispositif de traitement de substrat WO2022215633A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251854A (ja) * 2007-03-30 2008-10-16 Tokyo Electron Ltd プラズマ処理装置
JP2013042145A (ja) * 2012-09-03 2013-02-28 Tokyo Electron Ltd プラズマ処理装置
JP2015062237A (ja) * 2014-10-29 2015-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6424700B2 (ja) * 2015-03-26 2018-11-21 住友大阪セメント株式会社 静電チャック装置
WO2019163757A1 (fr) * 2018-02-20 2019-08-29 住友大阪セメント株式会社 Dispositif de mandrin électrostatique et procédé de fabrication de dispositif de mandrin électrostatique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251854A (ja) * 2007-03-30 2008-10-16 Tokyo Electron Ltd プラズマ処理装置
JP2013042145A (ja) * 2012-09-03 2013-02-28 Tokyo Electron Ltd プラズマ処理装置
JP2015062237A (ja) * 2014-10-29 2015-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法

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KR20230169071A (ko) 2023-12-15
TW202306020A (zh) 2023-02-01
JP7378668B2 (ja) 2023-11-13

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