WO2022213675A1 - 一种拉晶控制方法和设备、单晶炉以及计算机存储介质 - Google Patents

一种拉晶控制方法和设备、单晶炉以及计算机存储介质 Download PDF

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WO2022213675A1
WO2022213675A1 PCT/CN2021/142085 CN2021142085W WO2022213675A1 WO 2022213675 A1 WO2022213675 A1 WO 2022213675A1 CN 2021142085 W CN2021142085 W CN 2021142085W WO 2022213675 A1 WO2022213675 A1 WO 2022213675A1
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Prior art keywords
crystal pulling
image
area
liquid
melt
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PCT/CN2021/142085
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English (en)
French (fr)
Inventor
杨丽
徐鹏国
赵楠
郭力
周宏坤
杨正华
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银川隆基光伏科技有限公司
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Publication of WO2022213675A1 publication Critical patent/WO2022213675A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present disclosure relates to the technical field of crystal pulling, and in particular, to a crystal pulling control method and device, a single crystal furnace and a computer storage medium.
  • the timing of reducing the power of the bottom heater needs to be judged by field personnel based on experience.
  • the judgement of personnel may be due to the difference in personnel skills and experience, resulting in different timings of the bottom heater being judged to drop.
  • the single crystal furnace cannot be paid attention to in time, resulting in missing the opportunity to reduce the power of the bottom heater.
  • the purpose of the present disclosure is to provide a crystal pulling control method and equipment, a single crystal furnace and a computer storage medium, so as to provide a technical solution for accurately determining the timing of reducing the heater power according to the state of the automatic melting material.
  • the present disclosure provides a crystal pulling control method, which is applied in a single crystal furnace.
  • the single crystal furnace includes a heater and a crystal pulling device.
  • the above crystal pulling control method includes: in response to a feeding completion signal, receiving a solid-liquid parameter of a molten material image in a single crystal furnace sent by an image acquisition and processing device.
  • the heating power of the heater is controlled to drop to the target power within the first preset time period.
  • the crystal pulling parameters of the crystal pulling device are adjusted to the target crystal pulling parameters.
  • the above crystal pulling parameters may include at least one of the pressure in the single crystal furnace, the rotation of the crystal pulling crucible, and the flow rate of argon gas.
  • the present disclosure uses the solid-liquid parameters of the molten material image in the single crystal furnace sent by the image acquisition and processing device to determine whether the power reduction condition is satisfied, and when it is satisfied, the heating power of the heater is controlled to drop to the target temperature . And when the solid-liquid parameters meet the full melting condition of the molten material, the crystal pulling parameters of the crystal pulling device are adjusted to the target crystal pulling parameters. Therefore, the present disclosure automatically controls the heating power of the heater and automatically adjusts the crystal pulling parameters of the crystal pulling device. Compared with the prior art, which requires field personnel to determine the timing for reducing the power of the bottom heater based on experience, the present disclosure can improve the accuracy of determining the timing for reducing the power of the bottom heater on the basis of reducing labor costs.
  • the solid-liquid parameter of the melt includes a liquid ratio and a solid ratio in the melt image.
  • the liquid ratio is the ratio between the area of the liquid area in the melt image and the area of the melt area in the melt image
  • the solid ratio is the ratio between the area of the solid area in the melt image and the area of the melt area in the melt image.
  • the area of the melt area in the melt image is: the area of the area where the gray value of the melt image meets the melt threshold range.
  • the area of the liquid region in the frit image is: the area of the region in the frit image where the grayscale value satisfies the first liquid threshold range or the second liquid threshold range.
  • the area of the solid area in the melt image is: the area of the connected area obtained after edge detection and expansion processing of the melt image.
  • the solid-liquid parameters of the frit in the present disclosure include the liquid ratio and the solid ratio in the frit image. Based on this, the present disclosure performs threshold setting, edge detection and expansion processing on the melt image, and obtains the solid-liquid parameters of the melt. Therefore, the present disclosure is to obtain the solid-liquid parameters of the melt through an image processing algorithm. Therefore, compared with the manual judgment in the prior art, the accuracy of judging the timing for reducing the power of the bottom heater is significantly improved.
  • the above power reduction condition is: the liquid ratio is greater than the first value, and the solid ratio is less than the second value.
  • the first value is 0.2-0.25
  • the second value is 0.58-0.62.
  • receiving the solid-liquid parameters of the melt image in the single crystal furnace sent by the image acquisition and processing device includes: periodically receiving the solid-liquid parameters of the melt image in the single crystal furnace sent by the image acquisition and processing device.
  • the power reduction condition includes: in one receiving cycle, the liquid ratio of the melt is greater than the first value, and the number of times the solid ratio is less than the second value is greater than or equal to a preset number of times.
  • the power of the heater is controlled to drop to the target. power.
  • the solid-liquid parameters of the melt images are received multiple times, and whether the solid-liquid parameters of the multiple melt images can satisfy the power reduction condition is greater than or equal to the preset number of times to determine whether to control the
  • the power of the heater drops to the target power, that is to say, the timing of the heater’s descent is determined according to the solid-liquid parameters of the melt image obtained multiple times, which can be more accurate than that determined by the solid-liquid parameters of the melt image obtained once The determined heater power drops.
  • the solid-liquid parameter of the frit includes a liquid ratio in the frit image, and the liquid ratio is a ratio between the area of the liquid area in the frit image and the area of the frit area.
  • the complete melting condition of the melt is: the liquid ratio is greater than the third value. Among them, the third value is 0.4-0.45.
  • the crystal pulling parameters of the crystal pulling device are automatically adjusted to the target crystal pulling parameters, so that the crystal pulling process can be started quickly after the feeding is completed.
  • the liquid ratio in the melt image is greater than 0.4-0.45, it means that the melt basically meets the crystal pulling conditions. Therefore, using the above technical solution can improve the accuracy of entering the crystal pulling process.
  • the crystal pulling control method further includes: after a preset time period, sending water cooling to the water cooling screen.
  • the screen descending control signal, the water cooling screen descending control signal is used to control the water cooling screen to descend to the target position.
  • the crystal pulling control method further includes: receiving the melting temperature in the single crystal furnace sent by the temperature detection device.
  • the rate of change of the melt temperature is less than the preset rate of change, the temperature adjustment and stabilization stage is entered.
  • the preset change rate is 0.019-0.021.
  • the operator is required to drop the water cooling screen step by step according to the unmelted block in the furnace, and the difference in judgment between people leads to different timings for lowering the water cooling screen.
  • the present disclosure can automatically control the water-cooling panel to descend to the target position after a preset time period after the feeding is completed, so that the time for the water-cooling panel to descend can be more accurately determined.
  • the present disclosure also discloses a crystal pulling control device, comprising: a processor and a communication interface, the communication interface and the processor are coupled, and the processor is used for running a computer program or instruction to implement the above crystal pulling control method.
  • the present disclosure also discloses a single crystal furnace, including a heater, a crystal pulling device, a water cooling screen, a temperature detection device, and a crystal pulling control device.
  • the crystal device, the water cooling screen and the temperature detection device are communicatively connected.
  • the present disclosure further discloses that the computer storage medium stores instructions in the computer storage medium, and when the instructions are executed, the above crystal pulling control method is implemented.
  • FIG. 1 shows a flowchart of steps of a crystal pulling control method provided by an embodiment of the present disclosure
  • FIG. 2 shows a melt image obtained by binarizing the collected melt image provided by an embodiment of the present disclosure
  • FIG. 3 shows a schematic diagram of a melt area in a melt image obtained by setting a melt area threshold for a collected melt image according to an embodiment of the present disclosure
  • FIG. 4 shows a schematic diagram of a melt area in a melt image obtained after setting a first liquid threshold for a collected melt image provided by an embodiment of the present disclosure
  • FIG. 5 shows a schematic diagram of a melt area in a melt image obtained after setting a second liquid threshold for a collected melt image provided by an embodiment of the present disclosure
  • FIG. 6 shows a schematic diagram of a liquid area of a melt image provided by an embodiment of the present disclosure
  • FIG. 7-9 show a schematic diagram of a binarization process provided by an embodiment of the present disclosure and an obtained image after binarization
  • Figure 10 shows an edge image obtained after edge detection is performed on the collected melt image provided by an embodiment of the present disclosure
  • Fig. 11 shows a solid region in the frit image obtained after the expansion operation is performed on the edge image in Fig. 10 provided by an embodiment of the present disclosure.
  • FIG. 12 shows a schematic diagram of a hardware structure of a crystal pulling control device provided by an embodiment of the present disclosure.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature.
  • plurality means two or more, unless expressly and specifically defined otherwise.
  • Several means one or more than one, unless expressly specifically defined otherwise.
  • the timing of reducing the power of the bottom heater needs to be judged by field personnel based on experience.
  • the judgement of personnel may be due to the difference in personnel skills and experience, resulting in different timings of the bottom heater being judged to drop.
  • the single crystal furnace cannot be paid attention to in time, resulting in missing the opportunity to reduce the power of the bottom heater.
  • an embodiment of the present disclosure discloses a single crystal furnace.
  • the single crystal furnace is a method for melting polycrystalline materials such as polycrystalline silicon in an inert gas (mainly nitrogen and helium) environment, and using the Czochralski method to grow dislocation-free Equipment for monocrystalline silicon rods.
  • the single crystal furnace includes a heater and a crystal pulling device.
  • the heater is used to melt polycrystalline materials such as polycrystalline silicon in the single crystal furnace to obtain molten material.
  • the crystal pulling device is used for pulling single crystal silicon rods.
  • the above-mentioned single crystal furnace also includes a water cooling screen and a temperature detection device.
  • the water cooling screen is used to cool the single crystal silicon rod during the upward pulling process of the single crystal silicon rod, so that the growth of the single crystal silicon rod has a good longitudinal temperature gradient.
  • the temperature detection device is arranged in the crucible of the single crystal furnace to obtain the temperature of the molten material.
  • the temperature detection device may be a high temperature resistant temperature sensor.
  • the embodiment of the present disclosure also discloses a crystal pulling control method, which is applied to the above-mentioned single crystal furnace.
  • the above-mentioned crystal pulling control method includes the following steps:
  • S101 in response to a feeding completion signal, receive a solid-liquid parameter of a molten material image in a single crystal furnace sent by an image acquisition and processing device.
  • the image acquisition and processing device in the embodiment of the present disclosure can start to acquire and process the image of the molten material in the crucible after the crucible in the single crystal furnace is charged.
  • the image acquisition and processing device in the embodiment of the present disclosure can also be collecting and processing the image of the molten material in the crucible all the time, and only after the crucible in the single crystal furnace is charged, the single crystal furnace starts to receive the single crystal sent by the image acquisition and processing device. Solid-liquid parameters of the melt image in the furnace.
  • the above image acquisition and processing device may be a CCD (Charge Coupled Device, charge coupled device) image acquisition and processing device.
  • CCD Charge Coupled Device, charge coupled device
  • the above-mentioned image acquisition and processing device is used to collect and process the image of the molten material in the single crystal furnace. It can be understood that the image of the molten material in the single crystal furnace is the image of the molten material contained in the crucible of the single crystal furnace. Therefore, the image acquisition part of the image acquisition and processing device is placed at a position corresponding to the crucible to ensure that the image acquisition and processing device can acquire the image of the molten material in the crucible.
  • the image acquisition device After the image acquisition and processing device collects the melt image, the image acquisition device processes the collected melt image.
  • the specific processing process of the molten material image by the image acquisition and processing device includes:
  • the melt area threshold is set on the obtained melt image to obtain the effective field of view of the melt image.
  • the effective field of view of the above-mentioned molten material image may be the inner opening area of the guide tube in the single crystal furnace.
  • the effective field of view of the melt image can be defined as the melt area in the melt image, and the area of the melt area in the melt image can be obtained by calculating the area of the melt area in the melt image.
  • FIG 3 shows a schematic diagram of the melt area in the melt image obtained by setting the melt area threshold for the obtained melt image.
  • the above-mentioned threshold value of the molten material region may be set according to relevant experience, which is not specifically limited in this embodiment of the present disclosure.
  • a first liquid threshold is set on the acquired frit image to obtain the dark liquid area of the frit image shown in FIG. 4 .
  • the first liquid threshold may be 120.
  • an area with a gray value of less than 120 in the melt image is defined as a dark liquid area. It can be understood that the first liquid threshold can be adjusted according to specific requirements, which is not specifically limited in the present disclosure.
  • a second liquid threshold is set on the acquired frit image to obtain a bright liquid area of the acquired frit image, that is, the area shown in FIG. 5 .
  • the second liquid threshold may be 230.
  • an area with a gray value greater than 230 in the frit image is defined as a bright liquid area. It can be understood that the second liquid threshold can be adjusted according to specific requirements, which is not specifically limited in the present disclosure.
  • FIG. 6 shows a schematic diagram of a liquid area of a frit image provided by an embodiment of the present disclosure.
  • the sum of the area of the dark liquid area of the frit image and the area of the bright liquid area of the frit image is the area of the liquid area of the frit image in the embodiment of the disclosure.
  • the above processing of the image includes a binarization process, as shown in Figure 7, Figure 8, and Figure 9, the binarization process is to present the entire image with an obvious black and white effect.
  • the grayscale image of 256 brightness levels is selected by appropriate thresholds to obtain a binary image that can still reflect the overall and local characteristics of the image, and the target object is directly extracted from the multi-valued digital image.
  • the commonly used method is to set a Threshold T, use T to divide the image data into two parts: pixel groups larger than T and pixel groups smaller than T. Therefore, a pixel group larger than T or a pixel group smaller than T is selected as the target area.
  • the region larger than the threshold value T is the dark liquid value map.
  • the above-mentioned dark liquid area is an image area with a grayscale value of less than 120
  • the above-mentioned bright liquid area is an image area with a grayscale value greater than 230.
  • the embodiment of the present disclosure performs threshold setting, edge detection and expansion processing on the melt image, and obtains the solid-liquid parameters of the melt. Therefore, in the embodiment of the present disclosure, the solid-liquid parameters of the melt are obtained through an image processing algorithm. Therefore, compared with the manual judgment in the prior art, the accuracy of judging the timing for reducing the power of the bottom heater is significantly improved.
  • the solid-liquid parameter of the frit image in the embodiment of the present disclosure may be a liquid ratio and a solid ratio in the frit image.
  • the liquid ratio in the frit image may be the ratio of the area of the liquid area of the frit image to the area of the frit area in the frit image.
  • the solids ratio in the frit image may be the ratio of the area of the solid area of the frit image to the area of the frit area in the frit image.
  • the power reduction condition in the embodiment of the present disclosure may be that the volume ratio is greater than the first value, and the solid ratio is less than the second value. At this time, it can be considered that the heater has basically melted the silicon material, and it can be used as an opportunity to reduce the decrease of the heating power of the heater, and control the heating power of the heater to decrease to the target power.
  • the image acquisition and processing system sends a first alarm signal to the single crystal furnace, and after the single crystal furnace receives the first alarm signal, it starts the heater at the first pre- Decrease to the target power within the set time.
  • the range of the first value includes 0.2-0.25
  • the range of the second value includes 0.58-0.62
  • the first preset duration range includes 55S-63S
  • the target power can be set according to empirical values and actual conditions. The disclosed embodiments do not specifically limit this.
  • the above-mentioned first value is 0.23, and the second value is 0.6.
  • the first preset duration is 60S.
  • the first numerical range and the second numerical range in the embodiment of the present disclosure are set according to the state of the melt. Therefore, the embodiments of the present disclosure can more accurately control the timing of reducing the power of the heater.
  • receiving the solid-liquid parameters of the melt image in the single crystal furnace sent by the image acquisition and processing device includes: periodically receiving solid-liquid parameters of the melt image in the single crystal furnace sent by the image acquisition and processing device. fluid parameters.
  • the power reduction condition includes: in one receiving cycle, the liquid ratio of the melt is greater than the first value, and the number of times the solid ratio is less than the second value is greater than or equal to a preset number of times.
  • the duration of the above-mentioned one receiving cycle may be 2 minutes, and the image acquisition and processing device acquires 8 melt images in one receiving cycle, that is, the image acquisition and processing device can obtain 8 sets of solid-liquid parameters.
  • the single crystal furnace will receive 8 sets of solid-liquid parameters, and the power reduction condition is that the liquid ratio of the melt is greater than the first value and the number of times the solid ratio is less than the second value in one receiving cycle are all greater than or equal to 4 times.
  • the single crystal furnace receives the solid-liquid parameters of the melt images for multiple times, and the number of times the power reduction condition can be satisfied according to the solid-liquid parameters of the multiple melt images is greater than or equal to It is equal to the preset number of times to determine whether to control the heater power to drop to the target power, that is to say, the lowering timing of the heater is determined according to the solid-liquid parameters of the melt image obtained multiple times, compared with the melt image obtained through a single acquisition.
  • the solid-liquid parameters can be determined more accurately, and the power drop of the heater can be determined more accurately.
  • the above-mentioned full melting condition of the molten material is: the liquid ratio is greater than the third value.
  • the third numerical range may include 0.4-0.45. Specifically, the third numerical value may be 0.43.
  • the above-mentioned image processing and acquisition system sends out an alarm signal.
  • the single crystal furnace receives the alarm signal and reads the crystal pulling parameters in the crystal pulling equipment.
  • the single crystal furnace controls the crystal pulling device to adjust the crystal pulling parameters. to the target pulling parameters.
  • the liquid ratio in the frit image when the liquid ratio in the frit image is greater than 0.4-0.45, it means that the frit basically meets the crystal pulling conditions. Therefore, by setting the above-mentioned full melting conditions of the molten material, the accuracy of entering the crystal pulling process can be improved to a certain extent.
  • the above crystal pulling parameters may be at least one of the pressure in the single crystal furnace, the rotation of the crystal pulling crucible, and the flow of argon gas.
  • the above crystal pulling parameters can be the rotation of the crystal pulling pot and the flow rate of argon gas.
  • the embodiment of the present disclosure uses the solid-liquid parameters of the molten material image in the single crystal furnace sent by the image acquisition and processing device to determine whether the power reduction condition is met, and when so, controls the heating power of the heater to drop to the target temperature. And when the solid-liquid parameters meet the full melting condition of the molten material, the crystal pulling parameters of the crystal pulling device are adjusted to the target crystal pulling parameters. Therefore, the embodiments of the present disclosure automatically control the heating power of the heater and automatically adjust the crystal pulling parameters of the crystal pulling device.
  • the embodiment of the present disclosure can improve the accuracy of determining the timing for reducing the power of the bottom heater on the basis of reducing labor costs.
  • the crystal pulling control method after receiving the solid-liquid parameters of the molten material image in the single crystal furnace sent by the image acquisition and processing device in response to the charging completion signal, the crystal pulling control method further includes: after a second preset time period, Send the water-cooling panel descending control signal to the water-cooling panel, and the water-cooling panel descending control signal is used to control the water-cooling panel to descend to the target position.
  • the above-mentioned second preset duration range may be 110S-130S.
  • the above-mentioned second preset duration is 120S. It can be understood that the second preset duration may be specifically set according to actual conditions and experience values, which is not specifically limited in the embodiment of the present disclosure.
  • the embodiment of the present disclosure requires an operator to drop the water-cooling screen step by step according to the unmelted block in the furnace, and the difference in judgment between people leads to different timings for dropping the water-cooling screen.
  • the embodiment of the present disclosure can automatically control the water-cooling panel to descend to the target position after the feeding is completed for a preset period of time, so that the timing of the water-cooling panel descending can be more accurately determined.
  • the crystal pulling control method further includes: receiving the information sent by the temperature detection device in the single crystal furnace.
  • the rate of change of the melt temperature is less than the preset rate of change, the temperature adjustment and stabilization stage is entered.
  • the preset change rate range includes 0.019-0.021.
  • the preset rate of change range is 0.02.
  • the rate of change of the temperature of the molten material in the single crystal furnace is less than a preset value.
  • the single crystal furnace is controlled to enter the stage of temperature regulation and stabilization.
  • the crystal pulling control device 200 includes: a processor 210 and a communication interface 230, the communication interface 230 is coupled with the processor 210, and the processor 210 is used for running computer programs or instructions.
  • the crystal pulling control device 200 can communicate with the slicing device, the degumming device, the wafer insertion sorting device, and the driving components of the sorting device through the communication interface 230 .
  • the above-mentioned processor 210 may be a general-purpose central processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more for controlling An integrated circuit on which the program of the present disclosure executes.
  • the above-mentioned communication interface 230 may be one or more. Communication interface 230 may use any transceiver-like device for communicating with other devices or communication networks.
  • the above-mentioned crystal pulling control device 200 may further include a communication line 240 .
  • Communication line 240 may include a path to communicate information between the components described above.
  • the crystal pulling control device 200 may further include a memory 220 .
  • the memory 220 is used to store computer instructions for executing the solutions of the present disclosure, and the execution is controlled by the processor 210 .
  • the processor 210 is used to execute computer instructions stored in the memory 220 .
  • the memory 220 may be a read-only memory (ROM) or other type of static storage device that can store static information and instructions, a random access memory (RAM) or a static storage device that can store information and other types of dynamic storage devices for instructions, which may also be electrically erasable programmable read-only memory (EEPROM), compact disc read-only memory (CD-ROM), or other Optical disc storage, optical disc storage (including compact discs, laser discs, optical discs, digital versatile discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or capable of carrying or storing desired programs in the form of instructions or data structures code and any other medium that can be accessed by a computer, without limitation.
  • the memory 220 may exist independently and be connected to the processor 210 through a communication line 240 .
  • the memory 220 may also be integrated with the processor 210 .
  • the computer instructions in the embodiment of the present disclosure may also be referred to as application code, which is not specifically limited in the embodiment of the present disclosure.
  • the processor 210 may include one or more CPUs, such as CPU0 and CPU1 in FIG. 12 .
  • the crystal pulling control device 200 may include multiple processors 210 , such as the processor 210 and the processor 250 in FIG. 12 . Each of these processors can be a single-core processor or a multi-core processor.
  • Embodiments of the present disclosure also provide a computer-readable storage medium. Instructions are stored in the computer-readable storage medium, and when the instructions are executed, the functions performed by the crystal pulling control device in the above embodiments are implemented.
  • a computer program product includes one or more computer programs or instructions. When the computer program or instructions are loaded and executed on a computer, the procedures or functions of the embodiments of the present disclosure are performed in whole or in part.
  • a computer may be a general purpose computer, special purpose computer, computer network, terminal, user equipment, or other programmable device.
  • Computer programs or instructions may be stored in or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer program or instructions may be downloaded from a website site, computer, server, or data center Transmission by wire or wireless to another website site, computer, server or data center.
  • a computer-readable storage medium can be any available medium that a computer can access, or a data storage device such as a server, data center, or the like that integrates one or more available media.
  • Usable media can be magnetic media, such as floppy disks, hard disks, magnetic tapes; optical media, such as digital video discs (DVD); and semiconductor media, such as solid state drives (SSDs) ).

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Abstract

一种拉晶控制方法和设备、单晶炉以及计算机存储介质，涉及拉晶技术领域，提供一种根据自动熔料状态，确定加热器功率降低时机的技术方案。上述拉晶控制方法包括：响应于加料完成信号，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。当固液参数满足降低功率条件时，控制加热器的加热功率下降至目标功率。当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数。

Description

一种拉晶控制方法和设备、单晶炉以及计算机存储介质
相关申请的交叉引用
本申请要求在2021年4月8日提交中国专利局、申请号为202110379320.2、名称为“一种拉晶控制方法和设备、单晶炉以及计算机存储介质”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及拉晶技术领域，尤其涉及一种拉晶控制方法和设备、单晶炉以及计算机存储介质。
背景技术
在直拉法拉制单晶硅棒的过程中，需要在高温和真空状态下进行多次加料。在加料结束后，需要根据单晶炉内原料熔融情况，判断是否降低单晶炉内的底部加热器功率。
目前，底部加热器功率降低时机需要现场人员根据经验进行判断。首先人员判断可能会由于人员技能、经验不同，导致判断的底部加热器下降的时机不同。再者，也可能会由于操作人员工作任务繁忙，对单晶炉不能及时关注，导致错过底部加热器功率降低时机。
概述
本公开的目的在于提供一种拉晶控制方法和设备、单晶炉以及计算机存储介质，以提供一种根据自动熔料状态，准确确定加热器功率降低时机的技术方案。
第一方面，本公开提供一种拉晶控制方法，应用于单晶炉中。单晶炉包括加热器以及拉晶装置。
上述拉晶控制方法包括：响应于加料完成信号，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。当固液参数满足降低功率条件时，控制加热器的加热功率在第一预设时长内下降至目标功率。当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数。
其中，上述拉晶参数可以包括单晶炉内压强、拉晶埚转、氩气流量中的至少一种。
在采用上述方案的情况下，本公开利用图像采集处理设备发送的单晶炉内的熔料图像的固液参数判断是否满足降低功率条件，当满足时，控制加热器的加热功率下降至目标温度。且当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数。因此，本公开自动控制加热器的加热功率以及自动调整拉晶装置的拉晶参数。相比现有技术中，需要现场人员根据经验判断底部加热器功率降低时机，本公开可以在减少人工成本的基础上，提高底部加热器功率降低时机判断的准确性。
可选地，熔料的固液参数包括熔料图像中的液体比值以及固体比值。其中，液体比值为熔料图像中液体区域面积与熔料图像中熔料区域面积之间的比值，固体比值为熔料图像中固体区域面积与熔料图像中熔料区域面积之间的比值。
熔料图像中熔料区域面积为：熔料图像中灰度值满足熔料阈值范围的区域面积。熔料图像中液体区域面积为：熔料图像中灰度值满足第一液体阈值范围或第二液体阈值范围的区域面积。熔料图像中固体区域面积为：对熔料图像进行边缘检测以及膨胀处理后得到的连通区域面积。
在采用上述方案的情况下，利用熔料图像的灰度值与熔料阈值确定熔料图像中熔料区域面积，利用熔料图像中灰度值与第一液体阈值范围或第二液体阈值范围确定熔料图像中液体区域面积，以及对熔料图像进行边缘检测以及膨胀处理后得到的连通区域面积，确定熔料图像中固体区域面积。在此基础上，利用熔料图像中液体区域面积与熔料图像中熔料区域面积之间的比值，确定液体比值，利用熔料图像中固体区域面积与熔料图像中熔料区域面积之间的比值，确定固体比值。本公开中熔料的固液参数包括熔料图像中的液体比值以及固体比值。基于此，本公开对熔料图像进行了设置阈值、边缘检测以及膨胀处理，获得了熔料的固液参数。故本公开是通过图像处理算法，得到的熔料的固液参数。因此，相对于现有技术中的人工判断，明显提高了判断底部加热器功率降低时机的准确性。
可选地，上述降低功率条件为：液体比值大于第一数值，以及固体比值小于第二数值。其中，第一数值为0.2-0.25，第二数值为0.58-0.62。
在采用上述方案的情况下，当液体比值大于0.2-0.25，固体比值小于0.58-0.62时，控制加热器功率下降至目标功率。本公开中的第一数值和第二数值是根据熔料的状态进行设定的。因此，本公开可以更加准确的控制加热器功率下降的时机。
可选地，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数包括：周期性的接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。降低功率条件包括：在一个接收周期内，熔料的液体比值大于第一数值，以及固体比值小于第二数值的次数均大于或等于预设次数。
在采用上述方案的情况下，在一个接收周期内，当熔料的液体比值大于第一数值，以及固体比值小于第二数值的次数均大于或等于预设次数时，控制加热器功率下降至目标功率。由于在一个接收周期内，接收了多次熔料图像的固液参数，且根据多个熔料图像的固液参数可以满足降低功率条件的次数，是否大于或等于预设次数，来判断是否控制加热器功率下降至目标功率，也就是说，加热器的下降时机根据多次获取的熔料图像的固液参数确定，相比通过单次获取的熔料图像的固液参数确定，可以更加准确的确定加热器功率下降。
可选地，熔料的固液参数包括熔料图像中的液体比值，液体比值为熔料图像中液体区域面积与熔料区域面积之间的比值。熔料全熔条件为：所述液体比值大于第三数值。其中，第三数值为0.4-0.45。
在采用上述方案的情况下，当熔料图像中的液体比值大于0.4-0.45时，自动将拉晶装置的拉晶参数调整至目标拉晶参数，以在加料结束后可以迅速的启动拉晶程序。当熔料图像中的液体比值大于0.4-0.45时，说明熔料基本符合拉晶条件。因此，采用上述技术方案可以提高进入拉晶程序的准确性。
可选地，在响应于加料完成信号，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数后，拉晶控制方法还包括：在预设时长后，向水冷屏发送水冷屏下降控制信号，水冷屏下降控制信号用于控制水冷屏下降至目标位置。
或，在当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数之后，拉晶控制方法还包括：接收温度检测装置发送的单晶炉内的熔料温度变化率，当熔液温度的变化率小于预设变化率时，进入调温稳定化阶段。其中，预设变化率为0.019-0.021。
在采用上述方案的情况下，相对于现有技术中需要操作人员根据炉内未熔料块情况分步下降水冷屏，人与人间判断差异导致下降水冷屏时机不同。本公开可以在加料完成的预设时长后，自动控制水冷屏下降至目标位置，因此可以更加准确的确定水冷屏下降时机。
且本公开在当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调 整至目标拉晶参数之后，根据单晶炉内的熔料温度变化率小于预设变化率时，控制单晶炉进入调温稳定化阶段。解决了现有技术中需要人为判断调温稳定化时机，而导致的调温稳定化时机判断有误的技术问题。
第二方面，本公开还公开了一种拉晶控制设备，包括：处理器和通信接口，通信接口和处理器耦合，处理器用于运行计算机程序或指令，以实现上述拉晶控制方法。
第三方面，本公开还公开了一种单晶炉，包括加热器、拉晶装置、水冷屏、温度检测装置以及拉晶控制设备，所述拉晶控制设备与所述加热器、所述拉晶装置、所述水冷屏以及所述温度检测装置通信连接。
第四方面，本公开还公开了计算机存储介质计算机存储介质中存储有指令，当所述指令被运行时，实现上述拉晶控制方法。
本公开中第二方面、第三方面以及第四方面及其各种实现方式的有益效果与第一方面或第一方面任一可能的实现方式的有益效果相同，此处不再赘述。
附图简述
此处所说明的附图用来提供对本公开的进一步理解，构成本公开的一部分，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1示出了本公开实施例提供的一种拉晶控制方法的步骤流程图；
图2示出了本公开实施例提供的一种对采集的熔料图像进行二值化处理后得到的熔料图像；
图3示出了本公开实施例提供的一种对采集的熔料图像设定熔料区域阈值后得到的熔料图像中熔料区域的示意图；
图4示出了本公开实施例提供的一种对采集的熔料图像设定第一液体阈值后得到的熔料图像中熔料区域的示意图；
图5示出了本公开实施例提供的一种对采集的熔料图像设定第二液体阈值后得到的熔料图像中熔料区域的示意图；
图6示出了本公开实施例提供的一种熔料图像的液体区域的示意图；
图7－图9示出了本公开实施例提供的一种二值化处理的过程示意图以及得到的二值化处理后的图像；
图10示出了本公开实施例提供的一种对采集的熔料图像进行边缘检测 后得到的边缘图像；
图11示出了本公开实施例提供的一种对图10中边缘图像进行膨胀操作后，得到的熔料图像中的固体区域；并且
图12示出了本公开实施例提供的一种拉晶控制设备的硬件结构示意图。
详细描述
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“若干”的含义是一个或一个以上，除非另有明确具体的限定。
在直拉法拉制单晶硅棒的过程中，需要在高温和真空状态下进行多次加料。在加料结束后，需要根据单晶炉内熔料块的块的熔融情况，判断是否降低单晶炉内的底部加热器功率。
目前，底部加热器功率降低时机需要现场人员根据经验进行判断。首先人员判断可能会由于人员技能、经验不同，导致判断的底部加热器下降的时机不同。再者，也可能会由于操作人员工作任务繁忙，对单晶炉不能及时关注，导致错过底部加热器功率降低时机。
基于此，本公开实施例公开了一种单晶炉，单晶炉是一种在惰性气体(氮气、氦气为主)环境中，将多晶硅等多晶材料熔化，用直拉法生长无错位单晶硅棒的设备。本公开实施例中，单晶炉包括加热器以及拉晶装置。其中，加热器用于对单晶炉中的多晶硅等多晶材料熔化进行熔化，以获得熔料。拉晶装置用于拉制单晶硅棒。
进一步的，上述单晶炉还包括水冷屏以及温度检测装置。其中，水冷屏用于在单晶硅棒在向上拉制的过程中，对单晶硅棒进行冷却，使得单晶硅棒生长具有良好的纵向温度梯度。温度检测装置设置在单 晶炉的坩埚内，用于获取熔料的温度。其中，温度检测装置可以为耐高温的温度传感器。
本公开实施例还公开了一种拉晶控制方法，应用于上述单晶炉中。参照图1，上述拉晶控制方法包括以下步骤：
S101，响应于加料完成信号，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。
在本公开实施例中，当获取到单晶炉中的坩埚完成加料后，开始接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。可以理解，本公开实施例中的图像采集处理设备可以在单晶炉中的坩埚完成加料后，再开始采集以及处理坩埚中的熔料图像。本公开实施例中的图像采集处理设备也可以一直在采集和处理坩埚中的熔料图像，只是在单晶炉中的坩埚完成加料后，单晶炉才开始接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。
其中，上述图像采集处理设备可以为CCD(Charge Coupled Device，电荷耦合器)图像采集处理设备。
上述图像采集处理设备用于采集和处理单晶炉内熔料图像，可以理解，单晶炉内熔料图像为单晶炉的坩埚内盛放的熔料图像。因此，图像采集处理设备的图像采集部分放置在与坩埚对应的位置处，以保证图像采集处理设备可以采集到坩埚中的熔料图像。
当图像采集处理设备采集到熔料图像后，图像采集设备会对采集到的熔料图像进行处理。
作为一种具体的示例，当对图像采集处理设备采集的熔料图像进行二值化处理后。得到如图2所述的熔料图像，本公开实施例提供的图像采集处理设备对该熔料图像的具体的处理过程包括：
在获取的熔料图像上设定熔料区域阈值，得到熔料图像的有效视野。可以理解，上述熔料图像的有效视野可以为单晶炉内的导流筒内口区域。本公开实施例可以将熔料图像的有效视野定义为熔料图像中熔料区域，计算熔料图像中熔料区域的面积即可得到熔料图像中熔料区域面积。
其中，图3示出了对获取的熔料图像设定熔料区域阈值后得到的熔料图像中熔料区域的示意图。上述熔料区域阈值可以根据相关经验进行设定，本公开实施例对此不作具体的限定。
在获取的熔料图像上设定第一液体阈值，得到图4所示的熔料图像的暗液体区域。其中，第一液体阈值可以为120。具体的，在本公开实施例中，熔料图像中灰度值小于120的区域定义为暗液体区域。可以理解，第一液体阈值可以根据具体的要求进行适应的调整，本公开对此不作具体的限定。
接着在获取的熔料图像上设定第二液体阈值，得到采集的熔料图像的亮液体区域，即图5所示的区域。其中，第二液体阈值可以为230。在本公开实施例中，熔料图像中灰度值大于230的区域定义为亮液体区域。可以理解，第二液体阈值可以根据具体的要求进行适应的调整，本公开对此不作具体的限定。
图6示出了本公开实施例提供的熔料图像的液体区域的示意图。其中熔料图像的暗液体区域的面积与熔料图像的亮液体区域的面积之和为本公开实施例中熔料图像的液体区域面积。
以上对图像的处理均包括二值化处理过程，如图7、图8、图9所示，二值化处理是将整个图像呈现出明显的黑白效果。即将256个亮度等级的灰度图像通过适当的阈值选取而获得仍然可以反映图像整体和局部特征的二值化图像，从多值的数字图像中直接提取出目标物体，常用的方法就是设定一个阈值T，用T将图像的数据分成两部分：大于T的像素群和小于T的像素群。从而选取大于T的像素群或小于T的像素群作为目标区域。参照图8，大于阈值T的区域为暗液值图。例如，上述暗液体区域为灰度值小于120的图像区域，又例如，上述亮液体区域为灰度值大于230的图像区域。
对采集的熔料图像进行边缘检测，得到如图10所示的边缘图像。对边缘图像进行膨胀操作，得到如图11所示的熔料图像中的固体区域。计算熔料图像中的固体区域的面积即可得到熔料图像中固体区域面积。
基于此，本公开实施例对熔料图像进行了设置阈值、边缘检测以及膨胀处理，获得了熔料的固液参数。故本公开实施例是通过图像处理算法，得到的熔料的固液参数。因此，相对于现有技术中的人工判断，明显提高了判断底部加热器功率降低时机的准确性。
示例性的，本公开实施例中的熔料图像的固液参数可以为熔料图像中的液体比值以及固体比值。具体的，熔料图像中的液体比值可以 为熔料图像的液体区域面积与熔料图像中熔料区域面积的比值。熔料图像中的固体比值可以为熔料图像的固体区域面积与熔料图像中熔料区域面积的比值。
S102，当固液参数满足降低功率条件时，控制加热器的加热功率在第一预设时长内下降至目标功率。
本公开实施例中的降低功率条件可以为体比值大于第一数值，固体比值小于第二数值。此时，可以认为加热器已经对硅料进行了基本的熔融，可以作为降低加热器的加热功率下降的时机，并控制加热器的加热功率下降至目标功率。
作为一种具体的示例，当固液参数满足降低功率条件时，图像采集处理系统向单晶炉发送第一报警信号，当单晶炉接收到第一报警信号后，启动加热器在第一预设时长内下降至目标功率。
示例性的，上述第一数值的范围包括0.2-0.25，第二数值的范围包括0.58-0.62，第一预设时长范围包括55S-63S，目标功率可以根据经验值以及实际情况进行设定，本公开实施例对此不作具体的限定。
作为一种具体的示例，上述第一数值为0.23，第二数值为0.6。第一预设时长为60S。
本公开实施例中的第一数值范围和第二数值范围是根据熔料的状态进行设定的。因此，本公开实施例可以更加准确的控制加热器功率下降的时机。
作为另一种可能的实现方式，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数包括：周期性的接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数。降低功率条件包括：在一个接收周期内，熔料的液体比值大于第一数值，以及固体比值小于第二数值的次数均大于或等于预设次数。
示例性的，上述一个接收周期的时长可以为2min，图像采集处理设备在一个接收周期内，获取8张熔料图像，即图像采集处理设备可得到8组固液参数。此时，在一个接收周期内，单晶炉会接收到8组固液参数，降低功率条件为在一个接收周期内熔料的液体比值大于第一数值，以及固体比值小于第二数值的次数均大于或等于4次。
基于此，本公开实施例在一个接收周期内，单晶炉接收了多次熔料图像的固液参数，且根据多个熔料图像的固液参数可以满足降低功 率条件的次数，是否大于或等于预设次数，来判断是否控制加热器功率下降至目标功率，也就是说，加热器的下降时机根据多次获取的熔料图像的固液参数确定，相比通过单次获取的熔料图像的固液参数确定，可以更加准确的确定加热器功率下降。
S103，当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数。
上述所述熔料全熔条件为：所述液体比值大于第三数值。该第三数值范围可以包括0.4-0.45。具体的，该第三数值可以为0.43。
在一种可能实现的方式中，当固液参数满足上述熔料全熔条件时，上述图像处理采集系统发出报警信号。此时，单晶炉接收该报警信号，并读取拉晶设备中的拉晶参数，当该拉晶参数不满足目标拉晶参数时，单晶炉控制拉晶装置，以将拉晶参数调整至目标拉晶参数。
在本公开实施例中，当熔料图像中的液体比值大于0.4-0.45时，说明熔料基本符合拉晶条件。因此，通过设定上述熔料全熔条件，可以在一定程度上，提高进入拉晶程序的准确性。
其中，上述拉晶参数可以为单晶炉内压强、拉晶埚转、氩气流量中的至少一种。例如：上述拉晶参数可以为拉晶埚转和氩气流量。
基于此，本公开实施例利用图像采集处理设备发送的单晶炉内的熔料图像的固液参数判断是否满足降低功率条件，当满足时，控制加热器的加热功率下降至目标温度。且当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数。因此，本公开实施例自动控制加热器的加热功率以及自动调整拉晶装置的拉晶参数。相比现有技术中，需要现场人员根据经验判断底部加热器功率降低时机，本公开实施例可以在减少人工成本的基础上，提高底部加热器功率降低时机判断的准确性。
进一步的，本公开实施例在响应于加料完成信号，接收图像采集处理设备发送的单晶炉内的熔料图像的固液参数后，拉晶控制方法还包括：在第二预设时长后，向水冷屏发送水冷屏下降控制信号，水冷屏下降控制信号用于控制水冷屏下降至目标位置。
其中，上述第二预设时长范围可以为110S-130S。例如上述第二预设时长为120S。可以理解，该第二预设时长可以根据实际情况和经验值进行具体设定，本公开实施例对此不作具体限定。
基于此，本公开实施例相对于现有技术中需要操作人员根据炉内未熔料块情况分步下降水冷屏，人与人间判断差异导致下降水冷屏时机不同。本公开实施例可以在加料完成的预设时长后，自动控制水冷屏下降至目标位置，因此可以更加准确的确定水冷屏下降时机。
更进一步的，在当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数之后，拉晶控制方法还包括：接收温度检测装置发送的单晶炉内的熔料温度变化率，当熔液温度的变化率小于预设变化率时，进入调温稳定化阶段。
其中，预设变化率范围包括0.019-0.021。例如，预设变化率范围为0.02。
基于此，本公开实施例在当固液参数满足熔料全熔条件时，将拉晶装置的拉晶参数调整至目标拉晶参数之后，根据单晶炉内的熔料温度变化率小于预设变化率时，控制单晶炉进入调温稳定化阶段。解决了现有技术中需要人为判断调温稳定化阶段时机，而导致的调温稳定化阶段时机判断有误的技术问题。参照图12，上述拉晶控制设备执行的动作可以作为计算机指令存储在拉晶控制设备的存储器220中，存储器220中存储的计算机指令由处理器210来执行。
拉晶控制设备200包括：处理器210和通信接口230，通信接口230和处理器210耦合，处理器210用于运行计算机程序或指令。拉晶控制设备200可以通过通信接口230与切片设备、脱胶设备、插片分选设备以及分选设备的驱动组件进行通信。
如图12所示，上述处理器210可以是一个通用中央处理器(central processing unit，CPU)，微处理器，专用集成电路(application-specific integrated circuit，ASIC)，或一个或多个用于控制本公开方案程序执行的集成电路。上述通信接口230可以为一个或多个。通信接口230可使用任何收发器一类的装置，用于与其他设备或通信网络通信。
如图12所示，上述拉晶控制设备200还可以包括通信线路240。通信线路240可包括一通路，在上述组件之间传送信息。
可选地，如图12所示，拉晶控制设备200还可以包括存储器220。存储器220用于存储执行本公开方案的计算机指令，并由处理器210来控制执行。处理器210用于执行存储器220中存储的计算机指令。
如图12示，存储器220可以是只读存储器(read-only memory， ROM)或可存储静态信息和指令的其他类型的静态存储设备，随机存取存储器(random access memory，RAM)或者可存储信息和指令的其他类型的动态存储设备，也可以是电可擦可编程只读存储器(electrically erasable programmable read-only memory，EEPROM)、只读光盘(compact disc read-only memory，CD-ROM)或其他光盘存储、光碟存储(包括压缩光碟、激光碟、光碟、数字通用光碟、蓝光光碟等)、磁盘存储介质或者其他磁存储设备、或者能够用于携带或存储具有指令或数据结构形式的期望的程序代码并能够由计算机存取的任何其它介质，但不限于此。存储器220可以是独立存在，通过通信线路240与处理器210相连接。存储器220也可以和处理器210集成在一起。
可选地，本公开实施例中的计算机指令也可以称之为应用程序代码，本公开实施例对此不作具体限定。
在具体实现中，作为一种实施例，如图12所示，处理器210可以包括一个或多个CPU，如图12中的CPU0和CPU1。
在具体实现中，作为一种实施例，如图12所示，拉晶控制设备200可以包括多个处理器210，如图12中的处理器210和处理器250。这些处理器中的每一个可以是一个单核处理器，也可以是一个多核处理器。
本公开实施例还提供一种计算机可读存储介质。该计算机可读存储介质中存储有指令，当指令被运行时，实现上述实施例中由拉晶控制设备执行的功能。
在上述实施例中，可以全部或部分地通过软件、硬件、固件或者其任意组合来实现。当使用软件实现时，可以全部或部分地以计算机程序产品的形式实现。计算机程序产品包括一个或多个计算机程序或指令。在计算机上加载和执行计算机程序或指令时，全部或部分地执行本公开实施例的流程或功能。计算机可以是通用计算机、专用计算机、计算机网络、终端、用户设备或者其它可编程装置。计算机程序或指令可以存储在计算机可读存储介质中，或者从一个计算机可读存储介质向另一个计算机可读存储介质传输，例如，计算机程序或指令可以从一个网站站点、计算机、服务器或数据中心通过有线或无线方式向另一个网站站点、计算机、服务器或数据中心进行传输。计算机 可读存储介质可以是计算机能够存取的任何可用介质或者是集成一个或多个可用介质的服务器、数据中心等数据存储设备。可用介质可以是磁性介质，例如，软盘、硬盘、磁带；也可以是光介质，例如，数字视频光盘(digital video disc，DVD)；还可以是半导体介质，例如，固态硬盘(solid state drive，SSD)。
尽管在此结合各实施例对本公开进行了描述，然而，在实施所要求保护的本公开过程中，本领域技术人员通过查看附图、公开内容、以及所附权利要求书，可理解并实现公开实施例的其他变化。在权利要求中，“包括”(comprising)一词不排除其他组成部分或步骤，“一”或“一个”不排除多个的情况。单个处理器或其他单元可以实现权利要求中列举的若干项功能。相互不同的从属权利要求中记载了某些措施，但这并不表示这些措施不能组合起来产生良好的效果。
尽管结合具体特征及其实施例对本公开进行了描述，显而易见的，在不脱离本公开的精神和范围的情况下，可对其进行各种修改和组合。相应地，本说明书和附图仅仅是所附权利要求所界定的本公开的示例性说明，且视为已覆盖本公开范围内的任意和所有修改、变化、组合或等同物。显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包括这些改动和变型在内。

Claims (15)

  1. 一种拉晶控制方法，其特征在于，应用于单晶炉中，所述单晶炉包括加热器以及拉晶装置；所述拉晶控制方法包括：
    响应于加料完成信号，接收图像采集处理设备发送的所述单晶炉内熔料图像的固液参数；
    当所述固液参数满足降低功率条件时，控制所述加热器的加热功率在第一预设时长内下降至目标功率；
    当所述固液参数满足熔料全熔条件时，控制所述拉晶装置的拉晶参数调整至目标拉晶参数。
  2. 根据权利要求1所述的拉晶控制方法，其特征在于，所述熔料的固液参数包括所述熔料图像中的液体比值以及固体比值；
    其中，所述液体比值为所述熔料图像中液体区域面积与所述熔料图像中熔料区域面积之间的比值，所述固体比值为所述熔料图像中固体区域面积与所述熔料图像中熔料区域面积之间的比值。
  3. 根据权利要求2所述的拉晶控制方法，其特征在于，所述熔料图像中熔料区域面积为：所述熔料图像中灰度值满足熔料阈值范围的区域面积；
    所述熔料图像中液体区域面积为：所述熔料图像中灰度值满足第一液体阈值范围和第二液体阈值范围的区域面积；
    所述熔料图像中固体区域面积为：对所述熔料图像进行边缘检测以及膨胀处理后得到的连通区域面积。
  4. 根据权利要求2所述的拉晶控制方法，其特征在于，所述降低功率条件为：所述液体比值大于第一数值，以及所述固体比值小于第二数值。
  5. 根据权利要求4所述拉晶控制方法，其特征在于，所述第一数值的范围包括0.2-0.25，所述第二数值的范围包括0.58-0.62。
  6. 根据权利要求2所述的拉晶控制方法，其特征在于，所述接收图像采集处理设备发送的所述单晶炉内的熔料图像的固液参数包括：周期性的接收图像采集处理设备发送的所述单晶炉内的熔料图像的固液参数；
    所述降低功率条件包括：在一个接收周期内，所述熔料的液体比值 大于第一数值，以及固体比值小于第二数值的次数均大于或等于预设次数。
  7. 根据权利要求1-6任一项所述的拉晶控制方法，其特征在于，所述熔料的固液参数包括所述熔料图像中的液体比值，所述液体比值为所述熔料图像中液体区域面积与熔料区域面积之间的比值；
    所述熔料全熔条件为：所述液体比值大于第三数值。
  8. 根据权利要求7所述的拉晶控制方法，其特征在于，所述第三数值范围包括0.4-0.45。
  9. 根据权利要求1-6任一项所述的拉晶控制方法，其特征在于，单晶炉还包括水冷屏，在响应于加料完成信号，接收图像采集处理设备发送的所述单晶炉内的熔料图像的固液参数后，所述拉晶控制方法还包括：
    在第二预设时长后，向所述水冷屏发送水冷屏下降控制信号，所述水冷屏下降控制信号用于控制所述水冷屏下降至目标位置。
  10. 根据权利要求1-6任一项所述的拉晶控制方法，其特征在于，所述单晶炉还包括温度检测装置，在当所述固液参数满足熔料全熔条件时，将所述拉晶装置的拉晶参数调整至目标拉晶参数之后，所述拉晶控制方法还包括：
    接收所述温度检测装置发送的所述单晶炉内的熔料温度变化率，当所述熔料温度的变化率小于预设变化率时，进入调温稳定化阶段。
  11. 根据权利要求10所述的拉晶控制方法，其特征在于，所述预设变化率为0.019-0.021。
  12. 根据权利要求1-6任一项所述的拉晶控制方法，其特征在于，所述拉晶参数包括：单晶炉内压强、拉晶埚转、氩气流量中的至少一种。
  13. 一种拉晶控制设备，其特征在于，包括：处理器和通信接口，所述通信接口和所述处理器耦合，所述处理器用于运行计算机程序或指令，以实现权利要求1～12任一项所述的拉晶控制方法。
  14. 一种单晶炉，其特征在于，包括加热器、拉晶装置、水冷屏、温度检测装置以及权利要求13所述的拉晶控制设备，所述拉晶控制设备与所述加热器、所述拉晶装置、所述水冷屏以及所述温度检测装置通信连接。
  15. 一种计算机存储介质，其特征在于，所述计算机存储介质中存储有指令，当所述指令被运行时，实现权利要求1～12任一项所述的拉晶控制方法。
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