WO2022201830A1 - Procédé de traitement de substrat et dispositif de traitement de substrat - Google Patents

Procédé de traitement de substrat et dispositif de traitement de substrat Download PDF

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Publication number
WO2022201830A1
WO2022201830A1 PCT/JP2022/002647 JP2022002647W WO2022201830A1 WO 2022201830 A1 WO2022201830 A1 WO 2022201830A1 JP 2022002647 W JP2022002647 W JP 2022002647W WO 2022201830 A1 WO2022201830 A1 WO 2022201830A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
particles
suspension
structures
Prior art date
Application number
PCT/JP2022/002647
Other languages
English (en)
Japanese (ja)
Inventor
孝佳 田中
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020237029143A priority Critical patent/KR20230135658A/ko
Publication of WO2022201830A1 publication Critical patent/WO2022201830A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/2605—Bombardment with radiation using natural radiation, e.g. alpha, beta or gamma radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the size of the particles is preferably smaller than the distance between the adjacent structures.
  • the execution time of the processing liquid removal control is preferably longer than the execution time of the predetermined process.
  • the predetermined step preferably indicates a step of shaking off the processing liquid, which is the same as the processing liquid and does not contain the particles, from the substrate by rotation.
  • FIG. 3A is a side view showing a state in which the liquid film 26 of the suspension 25 covers the upper surface of the substrate W.
  • FIG. 3(b) is a side view showing an enlarged part of the liquid film 26 of the suspension 25 and part of the substrate W shown in FIG. 3(a).
  • the insulating layer is, for example, a silicon oxide film or a silicon nitride film.
  • the semiconductor layer is, for example, a polysilicon film or an amorphous silicon film.
  • the conductor layer is, for example, a metal film.
  • the metal film is, for example, a film containing at least one of titanium, tungsten, copper, and aluminum.
  • the density of the particles 252 in the suspension 25 is, for example, a volume fraction of 0.1 or more and 0.9 or less.
  • the density of the particles 252 in the suspension 25 is such that, for example, the particles 252 are in the space SP is a value that can occupy more than "M/10" of .
  • M is a real number.
  • M is, for example, "1", preferably "2", more preferably "3", more preferably "4", more preferably "5", more preferably "6", more preferably "7”
  • Preferred is "8", more preferred is "9", and most preferred is "10".
  • the more particles 252 occupying the space SP between the structures 23 at the completion of the treatment liquid removal step (FIGS. 4(c) and 5(a)), the more effectively the structure 23 collapses. can be suppressed. Details of this point will be described later.
  • the process liquid 251 is poured from the upper surface of the substrate W so that the particles 252 remain between the structures 23 adjacent to each other. Eliminate (remove).
  • the processing liquid 251 is removed (removed) from the substrate W by rotating the substrate W while the supply of the suspension 25 is stopped.
  • step S6 the center robot CR loads the substrate W into the particle removal unit 5.
  • the ozone gas supply unit 6B includes an ozone gas supply source 61B, a gas supply pipe 62B, a gas supply valve 63B, and a gas nozzle 64B.
  • the gas nozzle 64B has a gas supply port 641B.
  • the gas nozzle 64B is connected to the ozone gas supply source 61B via the gas supply pipe 62B. By opening the gas supply valve 63B, ozone (O 3 ) gas is supplied to the processing space 20B from the gas supply port 641B of the gas nozzle 64B.
  • a discharge gas exists in the space between the electrodes 33C and 35C.
  • a high voltage with a high frequency is applied between the electrodes 33C and 35C.
  • the discharge gas is excited into an excimer state.
  • the discharge gas generates ultraviolet rays when returning from the excimer state to the ground state.
  • the ultraviolet rays pass through the openings 351C of the electrodes 35C, pass through the quartz glass plate 31C, and irradiate the substrate W with the ultraviolet rays.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Selon la présente invention, un procédé de traitement de substrat consiste à traiter un substrat (W) qui présente un motif (PT) qui comporte une pluralité de structures (23). Le procédé de traitement de substrat comporte une étape d'alimentation en liquide de suspension (S3) et une étape d'élimination de liquide de traitement (S4). L'étape d'alimentation en liquide de suspension (S3) consiste à fournir un liquide de suspension (25) qui combine un liquide de traitement (251) et une pluralité de particules (252) qui ne se dissolvent pas dans le liquide de traitement (251) à une surface supérieure du substrat (W) et à former ainsi un film liquide (26) du liquide de suspension (25) sur la surface supérieure du substrat (W). L'étape d'élimination de liquide de traitement (S4) consiste à éliminer le liquide de traitement (251) de la surface supérieure du substrat (W) de sorte que les particules (252) restent entre des structures adjacentes (23) de la pluralité de structures (23).
PCT/JP2022/002647 2021-03-25 2022-01-25 Procédé de traitement de substrat et dispositif de traitement de substrat WO2022201830A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237029143A KR20230135658A (ko) 2021-03-25 2022-01-25 기판 처리 방법 및 기판 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021051569A JP2022149423A (ja) 2021-03-25 2021-03-25 基板処理方法及び基板処理装置
JP2021-051569 2021-03-25

Publications (1)

Publication Number Publication Date
WO2022201830A1 true WO2022201830A1 (fr) 2022-09-29

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ID=83395333

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/002647 WO2022201830A1 (fr) 2021-03-25 2022-01-25 Procédé de traitement de substrat et dispositif de traitement de substrat

Country Status (4)

Country Link
JP (1) JP2022149423A (fr)
KR (1) KR20230135658A (fr)
TW (1) TWI831129B (fr)
WO (1) WO2022201830A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10275788A (ja) * 1997-03-31 1998-10-13 Sumitomo Chem Co Ltd 半導体装置の製造方法及び半導体装置の製造装置
JP2010518230A (ja) * 2007-02-08 2010-05-27 フォンタナ・テクノロジー パーティクル除去方法及び組成物
JP2018157107A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 テンプレート洗浄方法、テンプレート洗浄装置、及び洗浄液

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127342A1 (fr) * 2011-03-18 2012-09-27 Basf Se Procédé permettant de fabriquer des dispositifs à circuit intégré, des dispositifs optiques, des micromachines et des dispositifs à précision mécanique qui présentent des couches de matériau structurées ayant des dimensions d'espacement des lignes égales ou inférieures à 50 nm
TW201712752A (zh) * 2015-06-04 2017-04-01 蘭姆研究公司 高深寬比結構之不造成坍陷的乾燥方法
JP6703858B2 (ja) 2016-02-26 2020-06-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10275788A (ja) * 1997-03-31 1998-10-13 Sumitomo Chem Co Ltd 半導体装置の製造方法及び半導体装置の製造装置
JP2010518230A (ja) * 2007-02-08 2010-05-27 フォンタナ・テクノロジー パーティクル除去方法及び組成物
JP2018157107A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 テンプレート洗浄方法、テンプレート洗浄装置、及び洗浄液

Also Published As

Publication number Publication date
TW202242981A (zh) 2022-11-01
TWI831129B (zh) 2024-02-01
JP2022149423A (ja) 2022-10-06
KR20230135658A (ko) 2023-09-25

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