WO2022186285A1 - フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 - Google Patents

フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 Download PDF

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WO2022186285A1
WO2022186285A1 PCT/JP2022/008906 JP2022008906W WO2022186285A1 WO 2022186285 A1 WO2022186285 A1 WO 2022186285A1 JP 2022008906 W JP2022008906 W JP 2022008906W WO 2022186285 A1 WO2022186285 A1 WO 2022186285A1
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Prior art keywords
adhesive
film
semiconductor element
semiconductor
semiconductor device
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PCT/JP2022/008906
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English (en)
French (fr)
Japanese (ja)
Inventor
翔太 青柳
和弘 山本
奏美 中村
紘平 谷口
Original Assignee
昭和電工マテリアルズ株式会社
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Priority to CN202280010958.1A priority Critical patent/CN116783258A/zh
Priority to JP2023503917A priority patent/JPWO2022186285A1/ja
Priority to KR1020237023164A priority patent/KR20230157294A/ko
Publication of WO2022186285A1 publication Critical patent/WO2022186285A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present disclosure relates to a film adhesive, a dicing/die bonding integrated film, a semiconductor device, and a method for manufacturing the same.
  • Patent Documents 1 and 2 a method of irradiating laser light inside a semiconductor wafer on a line to cut to form a modified region and then cutting the semiconductor wafer by expanding the outer peripheral portion has been proposed in recent years ( For example, Patent Documents 1 and 2). This method is called stealth dicing. With the development of new processing methods, it is necessary to develop compatible semiconductor materials. As such a semiconductor material, a dicing/die-bonding integrated film having both the performance of a dicing tape and a die-bonding film has been reported (for example, Patent Documents 3 and 4).
  • cooling expansion expansion under cooling conditions
  • a conventional dicing/die-bonding integrated film is applied to cooling expansion
  • the adhesive layer made of the film-like adhesive may not be cut.
  • the semiconductor wafer becomes thinner, the semiconductor wafer tends to warp, which may make it easier for the adhesive layer made of the film-like adhesive to separate from the semiconductor wafer. Therefore, the film-like adhesive is required to have excellent splitting properties by cooling expansion and also to have excellent adhesion to the semiconductor wafer.
  • a known method for improving the separability is, for example, to increase the amount of inorganic filler blended in the film adhesive.
  • the film-like adhesive becomes too brittle, which may cause problems such as splattering of shavings at the time of cutting and deterioration of adhesion between the adhesive layer and the semiconductor wafer.
  • Tg glass transition temperature
  • the main object of the present disclosure is to provide a film-like adhesive that is excellent in splittability by cooling expansion and also excellent in adhesiveness to a semiconductor wafer.
  • the film adhesive contains a thermosetting resin, a curing agent, and an elastomer.
  • Thermosetting resins include epoxy resins having a fluorene skeleton.
  • Such a film-like adhesive has excellent splitting properties by cooling expansion, and also has excellent adhesiveness to a semiconductor wafer.
  • the film adhesive may further contain an inorganic filler.
  • the thickness of the film adhesive may be 20 ⁇ m or less.
  • the film-like adhesive may be used in the manufacturing process of a semiconductor device in which multiple semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in multiple stages, or may be a three-dimensional NAND memory.
  • the dicing/die-bonding integrated film includes a substrate layer, an adhesive layer, and an adhesive layer made of the film-like adhesive in this order.
  • the semiconductor device includes a semiconductor element, a support member on which the semiconductor element is mounted, and an adhesive member provided between the semiconductor element and the support member to bond the semiconductor element and the support member.
  • the adhesive member is a cured product of the film adhesive described above.
  • the semiconductor device may further include another semiconductor element laminated on the surface of the semiconductor element.
  • Another aspect of the present disclosure relates to a method of manufacturing a semiconductor device.
  • the film-like adhesive is interposed between the semiconductor element and the supporting member or between the first semiconductor element and the second semiconductor element, and the semiconductor element and the A step of adhering the support member or the first semiconductor element and the second semiconductor element is provided.
  • Another aspect of the method for manufacturing the semiconductor device includes the steps of: attaching a semiconductor wafer to the adhesive layer of the dicing/die bonding integrated film; dicing the semiconductor wafer to which the adhesive layer is attached; A step of making a plurality of singulated semiconductor elements with adhesive pieces by expanding a material layer under cooling conditions, a step of picking up the semiconductor elements with adhesive pieces from the adhesive layer, and a step of picking up the adhesive pieces with the adhesive pieces. and bonding the semiconductor device to the support member via the adhesive strip.
  • the method of manufacturing a semiconductor device may further comprise a step of adhering, via an adhesive piece, another semiconductor element with an adhesive piece to the surface of the semiconductor element adhered to the support member.
  • a film-like adhesive that is excellent in splitting properties due to cooling expansion and is also excellent in adhesion to semiconductor wafers.
  • a dicing/die-bonding integrated film using such a film-like adhesive, a semiconductor device, and a method for manufacturing the same are provided.
  • a method of manufacturing a semiconductor device using such a dicing/die bonding integrated film is provided.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
  • FIG. 2 is a perspective view schematically showing a sample fixed to a jig in a breaking test.
  • FIG. 3 is a cross-sectional view schematically showing a state in which a load is applied to a sample by a pressing jig in a breaking test.
  • FIG. 4 is a graph schematically showing an example of the results of the breaking test.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of a dicing/die bonding integrated film.
  • FIG. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the numerical range indicated using “to” indicates the range including the numerical values before and after “to” as the minimum and maximum values, respectively.
  • the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in other steps. good.
  • the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • (meth)acrylate means acrylate or its corresponding methacrylate.
  • the film adhesive comprises a thermosetting resin (hereinafter sometimes referred to as "(A) component”), a curing agent (hereinafter sometimes referred to as “(B) component”), and an elastomer (hereinafter sometimes referred to as “(B) component”). It may be referred to as “(C) component”).
  • the film adhesive contains an inorganic filler (hereinafter sometimes referred to as "(D) component”), a coupling agent (hereinafter, “ (E) component”), a curing accelerator (hereinafter sometimes referred to as “(F) component”), and other components.
  • the film-like adhesive comprises components (A), (B), and (C), and optionally other components ((D), (E), (F), and other component, etc.) can be obtained by forming the adhesive composition into a film.
  • the film-like adhesive adheresive composition
  • the film-like adhesive may be in a semi-cured (B-stage) state and can be in a fully-cured (C-stage) state after curing treatment.
  • Thermosetting resin Component (A) may contain an epoxy resin, or may consist of one or more epoxy resins, from the viewpoint of adhesiveness.
  • the film adhesive contains, as the (A) component, an epoxy resin having a fluorene skeleton (hereinafter sometimes referred to as "(A1) component").
  • the (A1) component is a compound having a fluorene skeleton in the molecule and an epoxy group.
  • Component (A1) can be used without any particular limitation as long as it is a compound that satisfies these conditions.
  • the film-like adhesive can be excellent in the splitting property by cooling expansion and also in the adhesiveness to the semiconductor wafer. The inventors of the present disclosure consider the reason why such an effect is produced as follows. Since the fluorene skeleton has a rigid and sterically bulky structure, it is presumed that molecules of other materials can enter the gaps in the structure.
  • component (A1) is relatively easy to mix with elastomers (for example, acrylic rubber), and is thought to easily modify the properties of the elastomer from flexible and difficult to cut to hard and easy to cut. Along with this, it is conceivable that the adhesiveness to the semiconductor wafer is also improved by improving the elastic modulus.
  • elastomers for example, acrylic rubber
  • the (A1) component may be, for example, an epoxy resin represented by the following general formula (X).
  • Z 1 and Z 2 each independently represent a divalent aromatic hydrocarbon group.
  • Z 1 and Z 2 may be the same or different, and may be the same.
  • the divalent aromatic hydrocarbon group includes monocyclic aromatic hydrocarbons (e.g., benzene) or polycyclic aromatic hydrocarbons (e.g., bicyclic aromatic hydrocarbons such as naphthalene and indene).
  • Aromatic hydrocarbons tricyclic aromatic hydrocarbons such as anthracene, phenanthrene, dihydrophenanthrene and fluorene; tetracyclic aromatic hydrocarbons such as benzanthracene, benzophenanthrene, benzofluorene, pyrene and fluoranthene; ) from which two hydrogen atoms directly bonded to the carbon atoms constituting the ring are removed.
  • a divalent aromatic hydrocarbon group is a group obtained by removing two hydrogen atoms directly bonded to carbon atoms constituting a ring from an aromatic hydrocarbon formed by connecting a plurality of these aromatic hydrocarbons (e.g., biphenyl diyl group, terphenyldiyl group, etc.).
  • the divalent aromatic hydrocarbon group may be a benzenediyl group (phenylene group) or naphthalenediyl (naphthalenylene group).
  • the fluorene skeleton in the epoxy resin represented by formula (X) and the divalent aromatic hydrocarbon groups represented by Z 1 and Z 2 may have a substituent.
  • substituents include alkyl groups such as methyl group, ethyl group and propyl group; cycloalkyl groups such as cyclopentyl group and cyclohexyl group; aryl groups such as phenyl group and naphthyl group; aralkyl groups such as benzyl group; , propionyl group, acyl group such as benzoyl group; alkoxy group such as methoxy group, ethoxy group, propyloxy group, isopropyloxy group; alkoxycarbonyl group such as methoxycarbonyl group, ethoxycarbonyl group; cyano group; carboxyl group; nitro group amino group; substituted amino group (for example, mono- or dialkylamino group); halogen atom such as fluorine atom and chlorine atom
  • R 1A and R 2A each independently represent an alkylene group having 1 to 10 carbon atoms.
  • R 1A and R 2A may be the same or different, and may be the same.
  • the alkylene group include linear or branched alkylene groups having 1 to 10 carbon atoms such as methylene group, ethylene group, propylene group, trimethylene group, tetramethylene group and hexamethylene group.
  • the alkylene group may be an alkylene group having 2 to 6 carbon atoms, or an alkylene group having 2 or 3 carbon atoms.
  • p1 and p2 each independently represent an integer of 0 or more.
  • p1 and p2 may be the same or different, and may be the same.
  • p1 and p2 may be integers from 0-4 and may be integers from 1-4.
  • R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E , and R 2F each independently represent a hydrogen atom or 1 to 1 carbon atoms. 6 alkyl group.
  • R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E and R 2F may be the same or different.
  • alkyl groups having 1 to 6 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, s-butyl group, t-butyl group, pentyl group and hexyl group. be done.
  • R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E and R 2F may be a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, hydrogen It may be an atom.
  • epoxy resin represented by the general formula (X) examples include, for example, PG-100, EG-200, and CG-500 (trade names, all manufactured by Osaka Gas Chemicals Co., Ltd.).
  • the epoxy equivalent of component (A1) is not particularly limited, but may be 80-600 g/eq, 100-500 g/eq, or 200-400 g/eq. When the epoxy equivalent of component (A1) is in this range, better reactivity and fluidity tend to be obtained.
  • the content of component (A1) may be 40 to 100% by mass based on the total mass of component (A). When the content of component (A1) is within such a range, the effects of the present disclosure tend to be exhibited more remarkably.
  • the content of component (A1) may be 50% by mass or more, 60% by mass or more, 70% by mass or more, or 80% by mass or more based on the total mass of component (A).
  • the content of component (A1) may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total mass of the film adhesive, and may be 30% by mass or less, 20% by mass or less, Or it may be 15% by mass or less.
  • the content of the component (A1) is 1% by mass or more based on the total mass of the film adhesive, the elastic modulus after curing tends to be more excellent.
  • the content of the component (A1) is 30% by mass or less based on the total mass of the film adhesive, the flexibility before curing tends to be more excellent.
  • the (A) component may further contain, in addition to the (A1) component, an epoxy resin having no fluorene skeleton in the molecule (hereinafter sometimes referred to as "(A2) component").
  • the (A2) component includes, for example, bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolak type epoxy resin; cresol novolak type epoxy resin; Novolac type epoxy resin; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; triphenolmethane type epoxy resin; biphenyl type epoxy resin; xylylene type epoxy resin; and polycyclic aromatic diglycidyl ether compounds such as Among these, the (A2) component may contain a cresol novolac type epoxy resin.
  • the epoxy equivalent of component (A2) is not particularly limited, but may be 80-600 g/eq, 100-500 g/eq, or 200-400 g/eq. When the epoxy equivalent of component (A1) is in this range, better reactivity and fluidity tend to be obtained.
  • the content of component (A2) may be 0 to 60% by mass based on the total mass of component (A).
  • the content of component (A2) may be 50% by mass or less, 40% by mass or less, 30% by mass or less, or 20% by mass or less based on the total mass of component (A).
  • the content of component (A) may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total mass of the film adhesive, and may be 30% by mass or less, 20% by mass or less, Or it may be 15% by mass or less.
  • the content of the component (A) is 1% by mass or more based on the total mass of the film-like adhesive, the elastic modulus after curing tends to be more excellent.
  • the content of the component (A) is 30% by mass or less based on the total mass of the film adhesive, the flexibility before curing tends to be more excellent.
  • component (B) Component: Curing Agent Any commonly used curing agent for component (A) can be used.
  • component (A) contains an epoxy resin (consisting of one or more epoxy resins)
  • component (B) includes, for example, phenolic resins, ester compounds, aromatic amines, aliphatic amines, acid anhydrides. etc.
  • the component (B) may be a phenol resin.
  • Phenolic resins can be used without any particular restrictions as long as they have a phenolic hydroxyl group in the molecule.
  • phenolic resins include phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and/or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde.
  • Novolac-type phenol resin obtained by condensation or co-condensation of a compound having an aldehyde group in the presence of an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenols such as phenol and /
  • phenol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl, naphthol aralkyl resins, biphenyl aralkyl phenol resins, phenyl aralkyl phenol resins, and the like can be mentioned.
  • the hydroxyl equivalent of the phenolic resin may be 70 g/eq or more or 70 to 300 g/eq.
  • the storage elastic modulus tends to be further improved, and when it is 300 g/eq or less, it is possible to prevent problems due to foaming, outgassing, and the like.
  • the softening point of the phenolic resin may be 90°C or higher, 95°C or higher, 100°C or higher, 105°C or higher, 110°C or higher, or 115°C or higher.
  • the upper limit of the softening point of the phenolic resin may be, for example, 200°C or less.
  • the softening point means a value measured by the ring and ball method according to JIS K7234.
  • the content of component (B) may be 1% by mass or more, 2% by mass or more, or 3% by mass or more, based on the total mass of the film adhesive, and may be 20% by mass or less, 15% by mass or less, Alternatively, it may be 10% by mass or less.
  • the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenolic resin is From the viewpoint of curability, 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/ 0.40, or 0.45/0.55 to 0.55/0.45.
  • the corresponding weight ratio is 0.30/0.70 or more (the epoxy equivalent of the epoxy resin is 0.30 or more)
  • more sufficient curability tends to be obtained.
  • the corresponding weight ratio is 0.70/0.30 or less (the epoxy equivalent of the epoxy resin is 0.70 or less) it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity. can be done.
  • the total content of components (A) and (B) may be 1% by mass or more, 5% by mass or more, or 10% by mass or more based on the total mass of the film adhesive. When the total content of component (A) and component (B) is in this range, the adhesiveness tends to be further improved.
  • the total content of components (A) and (B) is 40% by mass or less, 30% by mass or less, or 20% by mass or less based on the total mass of the film adhesive, from the viewpoint of handleability. you can
  • component (C) Elastomer
  • component (C) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, and butadiene resins; modified products of these resins. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (C) is derived from a (meth)acrylic ester because it has few ionic impurities and is excellent in heat resistance, it is easy to ensure the connection reliability of a semiconductor device, and it is excellent in fluidity. It may be an acrylic resin (acrylic rubber) having structural units as a main component.
  • the content of structural units derived from (meth)acrylic acid ester in component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of structural units.
  • the acrylic resin (acrylic rubber) may contain structural units derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
  • the glass transition temperature (Tg) of component (C) may be 5°C or higher, or 10°C or higher.
  • Tg of component (C) is 5°C or higher, it is possible to further improve the adhesiveness of the film-like adhesive, and furthermore, it is possible to prevent the flexibility of the film-like adhesive from becoming too high. There is a tendency. This makes it easier to cut the film-like adhesive during wafer dicing, making it possible to prevent the occurrence of burrs.
  • the upper limit of Tg of component (C) is not particularly limited, but may be, for example, 55°C or lower, 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower.
  • the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, Thermo Plus 2 manufactured by Rigaku Corporation).
  • the Tg of the component (C) is the type and content of structural units that constitute the component (C) (structural units derived from (meth)acrylic acid esters when the component (C) is an acrylic resin (acrylic rubber)). can be adjusted to a desired range by adjusting .
  • the weight average molecular weight (Mw) of component (C) may be 100,000 or more, 300,000 or more, or 500,000 or more, and may be 3 million or less, 2 million or less, or 1 million or less.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • component (C) Commercially available products of component (C) include SG-P3, SG-80H (both manufactured by Nagase ChemteX Corporation), KH-CT-865 (manufactured by Hitachi Chemical Co., Ltd.), and the like.
  • the content of component (C) may be 30% by mass or more, 40% by mass or more, or 45% by mass or more based on the total mass of the film adhesive. When the content of the component (C) is in such a range, it tends to be more excellent in thin film coatability.
  • the content of component (C) may be 80% by mass or less, 70% by mass or less, or 65% by mass or less based on the total mass of the film adhesive. When the content of component (C) is in this range, the content of components (A) and (B) can be sufficiently ensured, and other properties tend to be compatible.
  • Component (D) Inorganic filler
  • component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, Examples include aluminum borate whiskers, boron nitride, and silica. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (D) may be silica from the viewpoint of adjusting the melt viscosity.
  • the shape of component (D) is not particularly limited, but may be spherical.
  • the average particle size of component (D) may be 0.7 ⁇ m or less, 0.6 ⁇ m or less, or 0.5 ⁇ m or less from the viewpoint of fluidity and storage modulus.
  • the average particle size of component (D) may be, for example, 0.01 ⁇ m or more.
  • the average particle size means the average particle size determined by the dynamic light scattering method.
  • the average particle size of component (D) can also be obtained by using a film-like adhesive containing component (D). In this case, the residue obtained by heating the film adhesive to decompose the resin component is dispersed in a solvent to prepare a dispersion liquid.
  • the average particle size of component (D) can be determined.
  • the content of component (D) may be 60% by mass or less, 50% by mass or less, or 45% by mass or less based on the total mass of the film adhesive. When the content of the component (D) is in this range, it tends to be more excellent in thin film coatability.
  • the content of component (D) may be 10% by mass or more, 15% by mass or more, or 20% by mass or more based on the total mass of the film adhesive.
  • the (E) component may be a silane coupling agent.
  • Silane coupling agents include, for example, ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, and the like. be done.
  • Component (F) Curing Accelerator
  • component (F) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. You may use these individually by 1 type or in combination of 2 or more types. Among these, imidazoles and derivatives thereof may be used as the component (F) from the viewpoint of reactivity.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. You may use these individually by 1 type or in combination of 2 or more types.
  • the film adhesive may further contain other components.
  • Other components include, for example, pigments, ion trapping agents, antioxidants, and the like.
  • the total content of component (E), component (F), and other components is 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass, based on the total mass of the film adhesive. It may be at least 20% by mass, 10% by mass or less, or 5% by mass or less.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
  • the film-like adhesive 1 shown in FIG. 1 is obtained by molding an adhesive composition into a film.
  • the film-like adhesive 1 is normally in a semi-cured (B stage) state, and can be in a completely cured (C stage) state after curing.
  • the film adhesive 1 can be formed by applying an adhesive composition to a support film.
  • a varnish of an adhesive composition (adhesive varnish) may be used.
  • the components (A), (B), (C), and optionally added components are mixed or kneaded in a solvent to prepare an adhesive varnish.
  • the film-like adhesive 1 can be obtained by applying the prepared adhesive varnish to a support film and removing the solvent by heating and drying.
  • the support film is not particularly limited as long as it can withstand the heat drying described above. It's okay.
  • the support film may be a multi-layer film in which two or more types are combined, or the surface thereof may be treated with a release agent such as a silicone-based or silica-based release agent.
  • the thickness of the support film may be, for example, 10-200 ⁇ m or 20-170 ⁇ m.
  • Mixing or kneading can be carried out by using a dispersing machine such as a normal stirrer, squeegee machine, triple roll, ball mill, etc., and combining them appropriately.
  • a dispersing machine such as a normal stirrer, squeegee machine, triple roll, ball mill, etc., and combining them appropriately.
  • the solvent used for preparing the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used.
  • solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene.
  • the solvent may be methyl ethyl ketone or cyclohexanone from a drying speed and cost point of view.
  • a known method can be used, for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, or the like is used. be able to.
  • Heat drying is not particularly limited as long as the solvent used is sufficiently volatilized, but it can be carried out at a heating temperature of 50 to 150° C. for a heating time of 1 to 30 minutes. Heat drying can be performed in stages at different heating temperatures and for different heating times.
  • the thickness of the film adhesive may be 20 ⁇ m or less, 18 ⁇ m or less, 15 ⁇ m or less, 12 ⁇ m or less, or 10 ⁇ m or less.
  • the lower limit of the thickness of the film adhesive is not particularly limited, it may be, for example, 1 ⁇ m or more.
  • the film-like adhesive produced on the support film may have a cover film on the side opposite to the support film of the film-like adhesive.
  • cover films include polyethylene films, polypropylene films, films treated with surface release agents, and the like.
  • the thickness of the cover film may be, for example, 15-200 ⁇ m or 30-170 ⁇ m.
  • a film-like adhesive can be made thinner, so it can be suitably used in the manufacturing process of a semiconductor device in which multiple semiconductor elements are laminated.
  • the semiconductor device may be a stacked MCP or a three-dimensional NAND memory.
  • the film-like adhesive 1 is a splitting property evaluation method using the results of a cleaving test performed under the following conditions (a film under low-temperature conditions (for example, a range of -15 ° C. to 0 ° C.) where cooling expansion is performed) method for evaluating splittability of adhesives), the adhesive may be a film adhesive having a breaking modulus m of 70 or less.
  • a breaking modulus m of 70 or less Width of sample: 5 mm Sample length: 23mm Relative speed between pushing jig and sample: 10 mm/min
  • the breaking test will be explained below.
  • the rupture test is classified as a bending strength test, and includes a step of pushing the central portion of the sample until the sample breaks while both ends of the sample are fixed.
  • the sample S is sandwiched and fixed between a pair of sample fixing jigs 20 and subjected to the breaking test.
  • the pair of sample fixing jigs 20 are made of, for example, cardboard having sufficient strength, and each have a rectangular opening 20a in the center.
  • a load is applied to the central portion of the fixed sample S using a pressing jig 21 (see FIG. 3).
  • the sample S may be obtained by cutting out the film-like adhesive to be evaluated, and the sample does not have to be prepared by laminating a plurality of adhesive pieces cut out from the film-like adhesive. That is, the thickness of the sample S may be the same as the thickness of the film adhesive.
  • the width of the sample S (Ws in FIG. 2) is, for example, 1 to 30 mm, and may be 3 to 8 mm. An appropriate width may be set according to the conditions of the measuring device.
  • the length of the sample S (Ls in FIG. 2) is, for example, 5-50 mm, and may be 10-30 mm or 6-9 mm. The length of the sample S depends on the size of the opening 20 a of the sample fixing jig 20 . Note that the shape of the sample fixing jig 20 and the size of the sample S may be other than those described above as long as the fracture test can be performed.
  • the pressing jig 21 consists of a cylindrical member having a conical tip 21a.
  • the diameter (R in FIG. 3) of the pressing jig 21 is, for example, 3 to 15 mm, and may be 5 to 10 mm.
  • the angle of the tip portion 21a ( ⁇ in FIG. 3) is, for example, 40 to 120°, and may be 60 to 100°.
  • the breaking test is carried out in a constant temperature bath set at a predetermined temperature.
  • the constant temperature bath may be set at a constant temperature in the range of ⁇ 15° C. to 0° C. (expected cooling expansion temperature).
  • As the constant temperature bath for example, TLF-R3-FW-PL-S manufactured by ITEC Co., Ltd. can be used.
  • an autograph for example, AZT-CA01, load cell 50N, compression mode manufactured by A&D Co., Ltd.
  • the work at break W, the strength at break P, and the elongation at break L are obtained.
  • the relative speed between the pressing jig 21 and the sample S is, for example, 1 to 100 mm/min, and may be 5 to 20 mm/min. If this relative speed is too high, there is a tendency that sufficient data on the cleaving process cannot be obtained, and if it is too slow, the stress tends to relax, making it difficult to achieve cleaving.
  • the pushing distance of the pushing jig 21 is, for example, 1 to 50 mm, and may be 5 to 30 mm. If the pushing distance is too short, there is a tendency not to result in breakage. It is preferable to prepare a plurality of samples of the film-like adhesive to be evaluated, and to perform a cleaving test a plurality of times to confirm the stability of the test results.
  • FIG. 4 is a graph showing an example of the results of the breaking test.
  • the breaking work W is the area enclosed when a graph is created with the vertical axis representing the load and the horizontal axis representing the pressing amount until the sample S breaks.
  • the breaking strength P is the load when the sample S breaks.
  • the breaking elongation L is the elongation amount of the sample S when the sample S breaks.
  • the breaking elongation L may be calculated using a trigonometric function from the pushing distance when the sample S is broken and the width of the opening 20a of the sample fixing jig 20.
  • the breaking modulus m may be 70 or less, 60 or less, 57 or less, or 55 or less.
  • the breaking modulus m is a parameter relating to stretchability of a film adhesive under low temperature conditions. When the breaking modulus m is 70 or less, the appropriate stretchability of the film-like adhesive tends to result in sufficient breakability by cooling expansion. This tendency is more remarkable as the numerical value of the breaking modulus m becomes smaller.
  • the fracture modulus m (dimensionless) may be greater than 0 and may be 10 or more or 15 or more. When the breaking modulus m is 15 or more, the stress propagating property tends to be good.
  • a film adhesive having a breaking modulus m within such a range can be suitably used in a semiconductor device manufacturing process in which cooling expansion is performed.
  • the breaking resistance R may be greater than 0 N/mm 2 and less than or equal to 40 N/mm 2 , more than 0 N/mm 2 and less than or equal to 35 N/mm 2 or 1 to 30 N/mm 2 .
  • the breaking resistance R is 40 N/mm 2 or less, the strength of the film-like adhesive does not become excessive and there is a tendency to obtain sufficient splittability.
  • the breaking resistance R is 20 N/mm 2 or more, good stress propagation occurs in cooling expansion, and there is a tendency to obtain even better splitting properties.
  • FIG. 5 is a schematic cross-sectional view showing an embodiment of a dicing/die bonding integrated film.
  • a dicing/die-bonding integrated film 10 shown in FIG. 5 includes a substrate layer 2, an adhesive layer 3, and an adhesive layer 1A made of the adhesive composition in this order.
  • the adhesive layer 1A may consist of the film-like adhesive 1 .
  • the base material layer 2 and the adhesive layer 3 may be a dicing tape 4 .
  • the dicing/die-bonding integrated film may be in the form of a film, a sheet, a tape, or the like.
  • the dicing tape 4 includes a base layer 2 and an adhesive layer 3 provided on the base layer 2 .
  • the base material layer 2 examples include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. These substrate layers 2 may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as required.
  • the adhesive layer 3 is a layer made of an adhesive.
  • the adhesive is not particularly limited as long as it has sufficient adhesive strength to prevent the semiconductor elements from scattering during dicing and has low adhesive strength to the extent that the semiconductor elements are not damaged in the subsequent step of picking up the semiconductor elements. can be used.
  • the adhesive may be either pressure sensitive or radiation curable.
  • a pressure-sensitive adhesive is an adhesive that exhibits a certain amount of adhesiveness when pressurized for a short period of time.
  • a radiation-curable pressure-sensitive adhesive is a pressure-sensitive adhesive that has the property of decreasing its adhesiveness when irradiated with radiation (for example, ultraviolet rays).
  • the thickness of the dicing tape 4 may be 60 to 150 ⁇ m or 70 to 130 ⁇ m from the viewpoint of economy and film handling.
  • the dicing/die bonding integrated film 10 can be obtained, for example, by preparing a film adhesive 1 and a dicing tape 4 and bonding the film adhesive 1 and the adhesive layer 3 of the dicing tape 4 together. Further, the dicing/die-bonding integrated film 10 can be obtained, for example, by preparing the dicing tape 4 and applying an adhesive composition (adhesive varnish) to the dicing tape 4 in the same manner as in the method of forming the film adhesive 1 described above. It can also be obtained by coating on the pressure-sensitive adhesive layer 3 .
  • the dicing/die bonding integrated film 10 is applied under predetermined conditions (for example, room temperature (20° C.) or It can be formed by laminating the film adhesive 1 on the dicing tape 4 in a heated state).
  • predetermined conditions for example, room temperature (20° C.) or It can be formed by laminating the film adhesive 1 on the dicing tape 4 in a heated state.
  • the dicing/die-bonding integrated film 10 can be continuously produced and is highly efficient, so it may be formed using a roll laminator in a heated state.
  • the film-like adhesive and the dicing/die-bonding integrated film may be used in the manufacturing process of a semiconductor device, or may be used in the manufacturing process of a semiconductor device formed by laminating a plurality of semiconductor elements. good.
  • a film-like adhesive is also suitably used as an adhesive for adhering a semiconductor element and a supporting member on which the semiconductor element is mounted.
  • the film-like adhesive is also suitably used as an adhesive for bonding semiconductor elements together in a stacked MCP (for example, a three-dimensional NAND memory), which is a semiconductor device formed by stacking a plurality of semiconductor elements. .
  • a stacked MCP for example, a three-dimensional NAND memory
  • the film adhesive is, for example, a protective sheet for protecting the back surface of the semiconductor element of the flip chip type semiconductor device, or a sealing sheet for sealing between the surface of the semiconductor element of the flip chip type semiconductor device and the adherend. etc. can also be used.
  • a semiconductor device manufactured using a film-like adhesive and a dicing/die-bonding integrated film will be specifically described below with reference to the drawings.
  • semiconductor devices with various structures have been proposed, and the application of the film-like adhesive and dicing/die bonding integrated film of the present embodiment is not limited to the semiconductor devices having the structures described below. do not have.
  • FIG. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
  • a semiconductor device 100 shown in FIG. 6 includes a semiconductor element 11 , a support member 12 on which the semiconductor element 11 is mounted, and an adhesive member 15 .
  • the adhesive member 15 is provided between the semiconductor element 11 and the support member 12 and bonds the semiconductor element 11 and the support member 12 together.
  • the adhesive member 15 is a cured product of an adhesive composition (cured film adhesive). Connection terminals (not shown) of the semiconductor element 11 are electrically connected to external connection terminals (not shown) via wires 13 and sealed with a sealing material 14 .
  • FIG. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • the first semiconductor element 11a is a support member 12 having terminals 16 formed by an adhesive member 15a (cured product of adhesive composition (cured product of film adhesive)).
  • the semiconductor element 11b in the second stage is further bonded onto the semiconductor element 11a in the first stage with an adhesive member 15b (cured product of adhesive composition (cured product of film-like adhesive)).
  • Connection terminals (not shown) of the first-stage semiconductor element 11 a and the second-stage semiconductor element 11 b are electrically connected to external connection terminals via wires 13 and sealed with a sealing material 14 .
  • the semiconductor device 110 shown in FIG. 7 further includes another semiconductor element (11b) laminated on the surface of the semiconductor element (11a) in the semiconductor device 100 shown in FIG.
  • FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
  • a semiconductor device 120 shown in FIG. 8 includes a support member 12 and semiconductor elements 11 a, 11 b, 11 c, and 11 d stacked on the support member 12 .
  • the four semiconductor elements 11a, 11b, 11c, and 11d are offset from each other in the lateral direction (direction perpendicular to the stacking direction) for connection with connection terminals (not shown) formed on the surface of the support member 12. position (see FIG. 8).
  • the semiconductor element 11a is adhered to the support member 12 by an adhesive member 15a (cured product of adhesive composition (cured product of film adhesive)).
  • Adhesive members 15b, 15c, and 15d are interposed, respectively. It can be said that the semiconductor device 120 shown in FIG. 8 further includes other semiconductor elements (11b, 11c, 11d) laminated on the surface of the semiconductor element (11a) in the semiconductor device 100 shown in FIG. .
  • FIG. 8 illustrates a semiconductor device in which four semiconductor elements are stacked, but the number of stacked semiconductor elements is not limited to this.
  • FIG. 8 illustrates the semiconductor device in which the semiconductor elements are stacked at positions shifted in the lateral direction (direction orthogonal to the stacking direction), the semiconductor elements direction) may be stacked at positions that are not shifted from each other.
  • the semiconductor device (semiconductor package) shown in FIGS. 6, 7, and 8 is provided between the semiconductor element and the supporting member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). By interposing the film adhesive between and bonding the semiconductor element and the supporting member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element). be able to.
  • a method for interposing a film-like adhesive between the semiconductor element and the support member or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), as described later A method may be employed in which a semiconductor element with an adhesive piece is prepared in advance and then attached to a supporting member or a semiconductor element.
  • the method of manufacturing a semiconductor device using the dicing/die-bonding integrated film is not limited to the method of manufacturing a semiconductor device described below.
  • a semiconductor device includes, for example, a step of attaching a semiconductor wafer to the adhesive layer of the dicing/die bonding integrated film (laminating step), and a step of dicing the semiconductor wafer to which the adhesive layer is attached (dicing step). , a step of producing a plurality of individualized semiconductor elements with adhesive pieces by expanding the base material layer under cooling conditions (cooling expansion step), and a step of picking up the semiconductor elements with adhesive pieces from the adhesive layer ( picking up step) and a step of adhering the picked up semiconductor element with an adhesive piece to a support member via the adhesive piece (first adhesion step).
  • the method of manufacturing a semiconductor device may further include a step of bonding another semiconductor element with adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece (second bonding step). .
  • the lamination step is a step of pressing a semiconductor wafer onto the adhesive layer 1A of the dicing/die bonding integrated film 10, holding it by adhesion, and attaching it. This step may be performed while pressing with a pressing means such as a pressing roll.
  • a pressing means such as a pressing roll.
  • the semiconductor wafer the same semiconductor wafer as described above can be exemplified.
  • semiconductor wafers include monocrystalline silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.
  • a dicing process is a process of dicing a semiconductor wafer. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method.
  • a method called half-cut in which a half cut is made in the semiconductor wafer a method in which a modified region is formed and divided by a laser (stealth dicing), or the like can be adopted.
  • Stealth dicing is preferably adopted for the adhesive layer of the dicing/die-bonding integrated film as described above because it is excellent in splitting property by cooling expansion.
  • the dicing device used in this step is not particularly limited, and conventionally known devices can be used.
  • the cooling expansion step is a step of expanding the base material layer under cooling conditions. As a result, a plurality of individualized semiconductor devices with adhesive pieces can be obtained.
  • the expansion conditions under the cooling conditions can be arbitrarily set, but for example, the cooling temperature is ⁇ 30 to 5° C., the cooling time is 30 seconds to 5 minutes, the thrust amount is 5 to 20 mm, and the thrust speed is 50 to 300 mm/second. can do.
  • Examples of semiconductor elements include ICs (integrated circuits).
  • Examples of supporting members include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; glass non-woven fabrics and other substrates impregnated with plastics such as polyimide resin and epoxy resin and cured. modified plastic film; ceramics such as alumina;
  • the pick-up step is a step of picking up semiconductor elements with adhesive pieces while separating the semiconductor elements with adhesive pieces from each other in order to separate the semiconductor elements with adhesive pieces adhesively fixed to the dicing/die bonding integrated film.
  • the method of expanding for separating the semiconductor elements with adhesive strips is not particularly limited, and various conventionally known methods can be employed. As a method for separating the semiconductor elements with adhesive strips, for example, a method of expanding the base material layer can be mentioned. The expansion may optionally be expansion under chilled conditions.
  • the pickup method is not particularly limited, and conventionally known various methods can be employed. Examples of such a method include a method of pushing up individual semiconductor elements with adhesive pieces from the dicing/die bonding integrated film side with a needle and picking up the pushed-up semiconductor elements with adhesive pieces with a pickup device.
  • the pick-up step can be performed after irradiating the adhesive layer with radiation.
  • the adhesive strength of the pressure-sensitive adhesive layer to the adhesive piece is lowered, and the semiconductor element with the adhesive piece is easily peeled off.
  • the first bonding step is a step of bonding the picked-up semiconductor element with the adhesive piece to a supporting member for mounting the semiconductor element via the adhesive piece.
  • a step (second bonding step) of bonding another semiconductor element with an adhesive piece to the surface of the semiconductor element bonded to the support member via the adhesive piece may be provided. Any bonding can be performed by crimping.
  • the crimping conditions are not particularly limited, and can be appropriately set according to need.
  • the crimping conditions may be, for example, a temperature condition of 80 to 160° C., a load condition of 5 to 15 N, and a time condition of 1 to 10 seconds.
  • the support member can illustrate the same support member as the above.
  • a method of manufacturing a semiconductor device includes, if necessary, a step (wire bonding step) of electrically connecting tips of terminal portions (inner leads) of a support member and electrode pads on a semiconductor element with bonding wires. good too.
  • the bonding wire for example, gold wire, aluminum wire, copper wire, or the like is used.
  • the temperature for wire bonding (providing bonding wires) may be in the range of 80 to 250°C or 80 to 220°C.
  • the heating time can be from a few seconds to several minutes.
  • the bonding wire may be performed in a heated state within the above-mentioned temperature range by using both vibrational energy of ultrasonic waves and crimping energy of applied pressure.
  • the method of manufacturing a semiconductor device may optionally include a step of sealing the semiconductor element with a sealing material (sealing step). This step is performed to protect the semiconductor element or bonding wires mounted on the support member. This step can be performed by molding resin for sealing (sealing resin) with a mold.
  • a sealing resin for example, an epoxy resin may be used.
  • the support member and residue are embedded by heat and pressure during sealing, and peeling due to air bubbles at the adhesion interface can be prevented.
  • the method of manufacturing a semiconductor device may include, if necessary, a process (post-curing process) for completely curing the sealing resin that is insufficiently cured in the sealing process. Even if the adhesive piece is not heat-cured in the sealing process, the adhesive piece can be heat-cured together with the curing of the sealing resin in the present process to enable adhesive fixation.
  • the heating temperature in this step can be appropriately set according to the type of sealing resin, and may be, for example, within the range of 165 to 185° C., and the heating time may be approximately 0.5 to 8 hours.
  • the method of manufacturing a semiconductor device may include, if necessary, a step of heating the semiconductor element with the adhesive piece adhered to the support member using a reflow furnace (heating and melting step).
  • a resin-sealed semiconductor device may be surface-mounted on the supporting member.
  • surface mounting methods include reflow soldering in which solder is preliminarily supplied onto a printed wiring board and then heated and melted by hot air or the like for soldering.
  • Examples of the heating method include hot air reflow and infrared reflow.
  • the heating method may be a method of heating the whole or a method of locally heating. The heating temperature may be within the range of 240-280° C., for example.
  • (A) component epoxy resin (A1) component: epoxy resin having a fluorene skeleton (A1-1) PG-100 (trade name, manufactured by Osaka Gas Chemicals Co., Ltd., epoxy resin having a fluorene skeleton, epoxy equivalent: 260 g / eq ) (A1-2) CG-500 (trade name, manufactured by Osaka Gas Chemicals Co., Ltd., epoxy resin having a fluorene skeleton, epoxy equivalent: 310 g/eq) (A2) Component: Epoxy resin having no fluorene skeleton (A2-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g/eq)
  • Component (C) Elastomer (C-1) Acrylic rubber obtained by changing some of the structural units of acrylic rubber in methyl ethyl ketone solution of acrylic rubber (SG-P3 (trade name, manufactured by Nagase ChemteX Corporation). , weight average molecular weight: 800,000, Tg: 12 ° C.)
  • D Component: Inorganic filler (D-1) YA050C (trade name, Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.050 ⁇ m) (D-2) SC2050-HLG (trade name, Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 ⁇ m)
  • E Component: Coupling agent (E-1) Y-9669 (trade name, manufactured by Momentive Performance Materials Japan, 3-phenylaminopropyltrimethoxysilane) (E-2) A-189 (trade name, manufactured by Nihon Unicar Co., Ltd., ⁇ -mercaptopropyltrimethoxysilane)
  • Curing accelerator (F-1) 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)
  • ⁇ Preparation of film adhesive> The produced adhesive varnish was filtered through a 100-mesh filter and vacuum defoamed.
  • a release-treated polyethylene terephthalate (PET) film having a thickness of 38 ⁇ m was prepared as a support film, and an adhesive varnish after vacuum defoaming was applied onto the PET film.
  • the applied adhesive varnish was dried by heating in two steps at 90° C. for 5 minutes and then at 130° C. for 5 minutes to obtain the film adhesives of Examples 1 to 4 and Comparative Examples 1 to 3 in the B-stage state ( thickness: 10 ⁇ m).
  • the thickness of the film adhesive was adjusted to 10 ⁇ m by adjusting the coating amount of the adhesive varnish.
  • Adhesive pieces (width 5 mm ⁇ length 100 mm) were cut out from the film adhesives of Examples 1 to 4 and Comparative Examples 1 to 3, respectively. The adhesive pieces were fixed to a pair of jigs (cardboard), and portions of the adhesive pieces protruding from the jigs were removed. As a result, a sample (width 5 mm ⁇ length 23 mm) to be evaluated was obtained. A cleaving test was performed in a constant temperature bath (TLF-R3-FW-PL-S manufactured by ITEC Co., Ltd.) set at -15°C.
  • TEZ-R3-FW-PL-S manufactured by ITEC Co., Ltd.
  • breaking test was performed under the conditions of compression mode, speed of 10 mm/min, and pushing distance of 5 mm. Breaking work W, breaking strength P, and breaking elongation L were obtained. Further, the breaking modulus m and the breaking resistance R were calculated from the above formulas (1) and (2). Note that the breaking coefficient m and breaking resistance R are the average values obtained by carrying out breaking tests eight times or more for each example and each comparative example. As the value of the breaking modulus m becomes smaller, the splitting property by cooling expansion tends to be excellent.
  • ⁇ Thickness of silicon wafer 30 ⁇ m ⁇ Chip size to be singulated by stealth dicing: length 4 mm x width 12 mm ⁇ Temperature of cooling expansion: Same temperature as the constant temperature bath in the fracture test of Examples and Comparative Examples ⁇ Push-up by expansion ring: 8 mm ⁇ Evaluation criteria: Light was applied to the silicon wafer after being pushed up by the expanding ring. Those where light passes between adjacent chips with adhesive strips (silicon wafer and adhesive layer are separated) are evaluated as "A”, and those where there are areas where light does not pass (silicon wafer and adhesive layer is not divided) was evaluated as "B". Table 1 shows the results.
  • the polyimide film on one side of the measurement sample is fixed to a 90 ° peel tester (TE-3001, manufactured by Tester Sangyo Co., Ltd.) with a nice stack (trade name, manufactured by Nichiban Co., Ltd.), and the stage is heated to 120 ° C. Then, the peel strength was determined by conducting a peel test. Table 1 shows the results.
  • the film adhesives of Examples 1 to 4 containing an epoxy resin having a fluorene skeleton as a thermosetting resin had a breaking modulus m of 70 or less.
  • the film-like adhesives of Examples 1-4 were superior in peel strength to the film-like adhesives of Comparative Examples 1-3, which did not contain an epoxy resin having a fluorene skeleton as a thermosetting resin. From these results, it was confirmed that the film-like adhesive of the present disclosure has excellent splitting properties due to cooling expansion, and also has excellent adhesion to semiconductor wafers.

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PCT/JP2022/008906 2021-03-05 2022-03-02 フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法 WO2022186285A1 (ja)

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