WO2022174610A1 - 一种有机发光显示面板、其制作方法及显示装置 - Google Patents

一种有机发光显示面板、其制作方法及显示装置 Download PDF

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WO2022174610A1
WO2022174610A1 PCT/CN2021/125542 CN2021125542W WO2022174610A1 WO 2022174610 A1 WO2022174610 A1 WO 2022174610A1 CN 2021125542 W CN2021125542 W CN 2021125542W WO 2022174610 A1 WO2022174610 A1 WO 2022174610A1
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electrode
layer
organic light
base substrate
auxiliary electrode
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PCT/CN2021/125542
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English (en)
French (fr)
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姚固
王玉
付潇
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Publication of WO2022174610A1 publication Critical patent/WO2022174610A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to an organic light-emitting display panel, a manufacturing method thereof, and a display device.
  • Organic Light Emitting Diode Compared with Liquid Crystal Display (LCD), Organic Light Emitting Diode (OLED) has the advantages of self-luminescence, wide viewing angle, lightness and so on, and is considered to be the next generation display technology.
  • Existing OLED devices generally include a first electrode and a second electrode, and a light-emitting layer between the first electrode and the second electrode. According to the different light-emitting directions, it can be divided into two types: bottom-emitting devices and top-emitting devices. Since the top emission device can obtain a larger aperture ratio and can significantly improve the screen brightness, it has become a hot research topic in recent years.
  • the pixel-defining structure defines a pixel unit
  • the first electrode on the substrate is separated by the pixel-defining structure
  • the light-emitting layer and the second electrode are all layered structures
  • top emission OLED devices need
  • the thin second electrode and the reflective first electrode increase the transmittance of light, while the problem brought by the thin transparent second electrode is that the resistance value is relatively high and the voltage drop (IR drop) is relatively serious.
  • Embodiments of the present disclosure provide an organic light-emitting display panel, including:
  • a base substrate which has a light-emitting area and a non-light-emitting area
  • a flat layer located on one side of the base substrate
  • an auxiliary electrode located on the same side of the base substrate as the flat layer, and located in the non-light-emitting region, and at least part of the auxiliary electrode and the orthographic projection of the flat layer on the base substrate do not intersect stack;
  • a first electrode located on a side of the flat layer away from the base substrate
  • a pixel definition layer located on the side of the first electrode away from the base substrate, the pixel definition layer has a pixel opening area exposing the first electrode and a first through hole exposing the auxiliary electrode;
  • an organic light-emitting layer located on the side of the first electrode away from the base substrate, the organic light-emitting layer covers part of the pixel definition layer, and the organic light-emitting layer and the auxiliary electrode are on the base substrate
  • the orthographic projections do not overlap;
  • the second electrode is located on the side of the organic light-emitting layer away from the base substrate, the second electrode has a whole-layer structure, and the second electrode is coupled to the auxiliary electrode through the overlapping electrode.
  • the flat layer has a first via hole, and the auxiliary electrode is located in the first via hole.
  • the first via hole penetrates the flat layer, and the thickness of the auxiliary electrode is the same as that of the auxiliary electrode.
  • the thickness of the flat layer is the same.
  • the thickness of the auxiliary electrode is 100 nm-700 nm.
  • the thickness of the overlap electrode is the same as the thickness of the pixel definition layer.
  • the thickness of the pixel definition layer is 100 nm-700 nm.
  • the first electrode is a reflective electrode
  • the material of the second electrode is a transparent conductive material
  • the material of the auxiliary electrode is a metal
  • the first electrode is an anode
  • the second electrode is a cathode
  • an embodiment of the present disclosure also provides a method for fabricating an organic light-emitting display panel, including:
  • a base substrate is provided, the base substrate has a light-emitting region and a non-light-emitting region;
  • a flat layer and an auxiliary electrode are formed on the same side of the base substrate; wherein, the auxiliary electrode is located in the non-light-emitting area, and at least part of the auxiliary electrode and the orthographic projection of the flat layer on the base substrate are different from each other. overlap;
  • a pixel definition layer is formed on the side of the first electrode away from the base substrate; wherein, the pixel definition layer has a pixel opening area exposing the first electrode and a first through hole exposing the auxiliary electrode ;
  • a mask is used to shield the organic light-emitting layer, the mask includes an opening area and a shielding area, the opening area corresponds to the auxiliary electrode, and the shielding area corresponds to other areas;
  • the opening area is irradiated with laser light to remove the organic light emitting layer corresponding to the opening area, so that the organic light emitting layer covers part of the pixel definition layer, and the organic light emitting layer and the auxiliary electrode are located in the
  • the orthographic projections on the base substrate do not overlap;
  • a lap electrode film layer is formed on the side of the reticle facing away from the base substrate, and the lap electrode film layer located in the shielding area of the reticle is disconnected from the lap electrode film layer located in the opening area open;
  • a second electrode covering the entire surface is formed on the side of the organic light-emitting layer away from the base substrate, and the second electrode is coupled to the auxiliary electrode through the overlapping electrode.
  • the forming of the flat layer and the auxiliary electrode on the same side of the base substrate specifically includes:
  • An auxiliary electrode is formed in the first via hole.
  • the laser irradiation wavelength is 308-355 nm
  • the energy density of the laser irradiation is 10-6000 mJ/cm 2
  • the frequency is 100-3000 Hz
  • the time is 5 ⁇ 1000ns.
  • the forming an organic light-emitting layer covering the entire surface on the side of the pixel definition layer away from the base substrate specifically:
  • An organic light-emitting layer covering the entire surface is formed on the side of the pixel definition layer away from the base substrate by means of vacuum evaporation or inkjet printing.
  • an embodiment of the present disclosure further provides a display device including any one of the above organic light emitting display panels.
  • FIG. 1 is a schematic structural diagram of an organic light-emitting display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic top-view structure diagram of an organic light-emitting display panel according to an embodiment of the present disclosure
  • FIG. 3 is a flowchart of a manufacturing method of an organic light emitting display panel provided by an embodiment of the present disclosure
  • FIGS. 4A-4I are schematic structural diagrams of steps performed in a method for fabricating an organic light emitting display panel provided by an embodiment of the present disclosure.
  • FIG. 1 is a schematic cross-sectional view of an organic light-emitting display panel
  • FIG. 2 is a schematic top view of some film layers in FIG. 1
  • FIG. 1 is 2 is a schematic cross-sectional view along the CC' direction
  • the organic light emitting display panel includes:
  • the base substrate 1 has a light-emitting area AA and a non-light-emitting area BB;
  • the flat layer 2 is located on one side of the base substrate 1;
  • the auxiliary electrode 3 is located on the same side of the base substrate 1 as the flat layer 2, and is located in the non-light-emitting area BB, and at least part of the auxiliary electrode 3 and the orthographic projection of the flat layer 2 on the base substrate 1 do not overlap;
  • the first electrode 4 is located on the side of the flat layer 2 away from the base substrate 1;
  • the pixel definition layer 5 is located on the side of the first electrode 4 away from the base substrate 1, and the pixel definition layer 5 has a pixel opening area 51 exposing the first electrode 4 and a first through hole 52 exposing the auxiliary electrode 3;
  • the organic light-emitting layer 6 is located on the side of the first electrode 4 away from the base substrate 1, the organic light-emitting layer 6 covers part of the pixel definition layer 5, and the orthographic projections of the organic light-emitting layer 6 and the auxiliary electrode 3 on the base substrate 1 do not overlap ;
  • the lap electrode 8' is located in the first through hole 52;
  • the second electrode 9 is located on the side of the organic light-emitting layer 6 away from the base substrate 1, the second electrode 9 is a whole-layer structure, and the second electrode 9 is coupled to the auxiliary electrode 3 through the overlapping electrode 8'.
  • the coupling of the second electrode 9 with the auxiliary electrode 3 through the lap electrode 8 ′ means that the second electrode 9 is electrically connected with the lap electrode 8 ′, and the lap electrode 8 ′ is electrically connected with the auxiliary electrode 3 . Therefore, The second electrode 9 and the auxiliary electrode 3 are also electrically connected, that is, coupled.
  • the first electrode 4 (anode) is below the organic light-emitting layer 6 and the second electrode 9 (cathode) is above the organic light-emitting layer 6 as an example for illustration.
  • the solution of cathode and anode interchange is similar to that of the embodiment of the present disclosure, and details are not repeated here.
  • the step difference between the second electrode 9 and the auxiliary electrode 3 is large, which is likely to cause the second electrode 9 and the auxiliary electrode
  • the electrical contact between 3 is poor (virtual connection), so in Embodiment 1 of the present disclosure, by forming the overlapping electrode 8' in the first through hole 52, the overlapping electrode 8' can significantly reduce the step difference, and reduce the difference between the second electrode 9 and the second electrode 9.
  • the virtual connection between the auxiliary electrodes 3 improves the product yield.
  • the first electrode 4 is a patterned structure, so the position containing the first electrode 4 (anode) on the base substrate 1 is the region of the pixel unit, and the position not including the first electrode 4 (anode), Although the second electrode 9 (cathode) is covered, it does not emit light and does not belong to the pixel unit.
  • the position without the first electrode 4 (anode) is the pixel defining area.
  • the thicknesses of the auxiliary electrode 3 and the flat layer 2 may both be 100 nm-700 nm.
  • the thicknesses of the bonding electrode 8' and the pixel defining layer 5 may both be 100nm-700nm.
  • the material of the pixel definition layer 5 may be selected from resin, polyimide, silicone or silicon dioxide.
  • the first electrode 4 is a reflective electrode
  • the material of the reflective electrode can be selected from Al, Ag, and Mg.
  • the material of the second electrode 9 is a transparent conductive material, and the cathode can be made of magnesium-silver mixture, indium zinc oxide IZO, indium tin oxide ITO, aluminum doped zinc oxide AZO, etc.
  • One or more composite materials are formed;
  • the material of the auxiliary electrode is metal, and the material of the auxiliary electrode 3 can be selected from at least one of molybdenum, aluminum, copper, silver, and niobium.
  • each film layer structure is only for illustration.
  • the projected area of each film layer structure on the base substrate may be the same or different.
  • the required projected area of each film layer structure can be achieved by an etching process; at the same time, the structure shown in the drawings does not limit the geometric shape of each film layer structure, for example, it can be a rectangle as shown in the drawings, or a trapezoid, Or other shapes formed by etching can also be achieved by etching.
  • An embodiment of the present disclosure provides a method for fabricating an organic light-emitting display panel, as shown in FIG. 3 , including:
  • S301 Provide a base substrate, and the base substrate has a light-emitting region and a non-light-emitting region;
  • the mask includes an opening area and a shielding area, the opening area corresponds to the auxiliary electrode, and the shielding area corresponds to other areas;
  • the organic light-emitting layer in the corresponding area is removed by laser irradiation, so that the organic light-emitting layer covers part of the pixel definition layer, and the organic light-emitting layer and the auxiliary electrode are located at the same location.
  • the orthographic projections on the base substrate do not overlap, and then the second electrode formed is coupled to the auxiliary electrode through the lap electrode, and the second electrode and the auxiliary electrode are equivalent to parallel connection, so the auxiliary electrode can reduce the resistance of the second electrode, Thereby reducing the voltage drop (IR drop).
  • the embodiment of the present disclosure when the organic light-emitting layer in the corresponding area is removed by laser irradiation, by using a mask to cover the area not irradiated by the laser, the mask can effectively isolate the dust (particle) generated when the laser is irradiated, and avoid the laser
  • the contamination of the organic light-emitting layer by the particles generated during irradiation is beneficial to the removal of the particles. Therefore, the embodiments of the present disclosure reduce the resistance of the first electrode without polluting the organic light-emitting layer.
  • a method for fabricating an organic light-emitting display panel provided by an embodiment of the present disclosure includes the following fabrication steps:
  • the base substrate 1 has a light-emitting area AA and a non-light-emitting area BB, a flat layer 2 is formed on the base substrate 1, and the flat layer 2 corresponding to the non-light-emitting area BB is patterned to form a through
  • the first via hole 21 of the flat layer 2 is shown in FIG. 4A .
  • the flat layer 2 can be patterned to form the first via hole 21 by a process such as exposure and etching, and the material of the flat layer 2 can be resin or the like.
  • the base substrate 1 is a substrate on which a thin film transistor array is fabricated.
  • the auxiliary electrode 3 is formed in the first via hole 21, as shown in FIG. 4B; wherein, the material of the auxiliary electrode 3 is metal, and the material of the auxiliary electrode 3 can be selected from molybdenum, aluminum, copper, silver, and niobium. At least one, the specific size of the auxiliary electrode 3 is not limited here.
  • the thickness of the auxiliary electrode 3 can be the same as that of the flat layer 2 or different from the thickness of the flat layer 2 . Specifically, the thickness of the auxiliary electrode 3 may be in the range of 100 nm-700 nm.
  • first electrode 4 is used as an anode and the second electrode is used as a cathode for illustration, and the auxiliary electrode 3 is used as an auxiliary cathode.
  • the solution in which the first electrode 4 is the cathode and the second electrode is the anode is similar to that in the present disclosure, and will not be repeated here.
  • the first electrode 4 can be formed by magnetron sputtering or vacuum evaporation, and patterned by exposure and etching.
  • the first electrode 4 is a reflective electrode, and the material of the reflective electrode can be selected from Al, Ag, One or several mixed alloy materials of Mg.
  • the material of the pixel definition layer 5 can be selected from resin, polyimide, organic silicon or silicon dioxide, and in the direction perpendicular to the base substrate 1, the thickness of the pixel definition layer 5 can be 100nm-700nm.
  • An organic light-emitting layer 6 is formed on the side of the pixel definition layer 5 away from the base substrate 1, as shown in FIG. 4D; It should be noted that the organic light-emitting layer 6 can be a multi-layer structure, and according to the needs of light emission, the organic light-emitting layer 6 can include a hole injection layer (Hole Injection Layer, HIL), a hole transport layer (Hole Transport Layer, HTL), Emitting Material Layer (EML), Electron Transport Layer (ETL) and Electron Injection Layer (EIL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EML Electron Transport Layer
  • EIL Electron Injection Layer
  • a mask 7 is used to shield the organic light-emitting layer 6.
  • the mask 7 includes an opening area 71 and a shielding area 72.
  • the opening area 71 corresponds to the auxiliary electrode 3, and the shielding area 72 corresponds to other areas, as shown in FIG. 4E. .
  • the apertured area 71 is irradiated (indicated by the arrow) with laser light, and the organic light-emitting layer 6 corresponding to the apertured area 71 is removed, so that the organic light-emitting layer 6 covers part of the pixel definition layer 5 , and the orthographic projections of the organic light-emitting layer 6 and the auxiliary electrode 3 on the base substrate 1 do not overlap.
  • the laser irradiation wavelength is 308-355nm, preferably 330nm, 308nm, 355nm and other wavelengths; the energy density of the laser irradiation is 10-6000mJ/cm 2 , the frequency is 100-3000Hz, and the time is 5-1000ns.
  • the overlapping electrode film layer 8 is formed on the side of the mask 7 away from the base substrate 1. In the direction perpendicular to the base substrate 1, the thickness of the overlapping electrode film layer 8 can be the same as the thickness of the pixel definition layer 5. Similarly, since the pixel definition layer 5 has the first through hole 52 exposing the auxiliary electrode 3 , the first through hole 52 corresponds to the opening area 71 , so the overlapping electrode film layer 8 located in the shielded area 72 of the mask 7 is different from The overlapping electrode film layer 8 of the opening region 71 is disconnected, as shown in FIG. 4G .
  • the bonding electrode 8' is located in the first through hole 52, as shown in FIG. 4H. Specifically, in the direction perpendicular to the base substrate 1, the thickness of the bonding electrode 8' is the same as the thickness of the pixel definition layer 5.
  • the organic light-emitting layer 6 is irradiated with laser light in step (6), particles will be generated. Although the mask 7 can isolate the particles, there will be residual particles on the auxiliary electrode 3. The overlapping electrode 8' can form a coating effect on the residual particles.
  • the second The step difference between the electrode 9 and the auxiliary electrode 3 is large, which easily leads to poor electrical contact (virtual connection) between the second electrode 9 and the auxiliary electrode 3.
  • the overlapping electrode 8' is formed in the first through hole 52. , the overlapping electrode 8 ′ can significantly reduce the step difference, reduce the virtual connection between the second electrode 9 and the auxiliary electrode 3 , and improve the product yield.
  • a second electrode 9 covering the entire surface is formed on the side of the organic light-emitting layer 6 away from the base substrate 1, and the second electrode 9 is coupled to the auxiliary electrode 3 through the overlap electrode 8', as shown in FIG. 4I shown.
  • the second electrode 9 is a cathode
  • the material of the second electrode is a transparent conductive material
  • the cathode can be one or more of magnesium-silver mixture, indium zinc oxide IZO, indium tin oxide ITO, aluminum doped zinc oxide AZO, etc. formed of composite materials.
  • the organic light-emitting layer in the corresponding area is removed by laser irradiation, so that the organic light-emitting layer covers part of the pixel definition layer, and the organic light-emitting layer and the auxiliary electrode are located at the same location.
  • the orthographic projections on the base substrate do not overlap, and then the second electrode formed is coupled to the auxiliary electrode through the lap electrode, and the second electrode and the auxiliary electrode are equivalent to parallel connection, so the auxiliary electrode can reduce the resistance of the second electrode, Thereby reducing the voltage drop (IR drop).
  • the embodiment of the present disclosure when the organic light-emitting layer in the corresponding area is removed by laser irradiation, by using a mask to cover the area not irradiated by the laser, the mask can effectively isolate the dust (particle) generated when the laser is irradiated, and avoid the laser
  • the contamination of the organic light-emitting layer by the particles generated during irradiation is beneficial to the removal of the particles. Therefore, the embodiments of the present disclosure reduce the resistance of the first electrode without polluting the organic light-emitting layer.
  • Embodiments of the present disclosure provide a display device including any of the above organic light-emitting display panels.
  • the principle of solving the problem of the display device is similar to that of the aforementioned organic light-emitting display panel. Therefore, the implementation of the display device can refer to the aforementioned implementation of the organic light-emitting display panel, and the repetition will not be repeated here.
  • the display device may be any product or component with display function, such as a mobile phone, a tablet computer, a TV, a monitor, a notebook computer, a digital photo frame, and a navigator.
  • Other essential components of the display device should be understood by those of ordinary skill in the art, and will not be repeated here, nor should it be regarded as a limitation of the present disclosure.
  • the organic light-emitting layer in the corresponding area is removed by laser irradiation, so that the organic light-emitting layer covers part of the pixel definition layer, and the organic light-emitting layer is The orthographic projection of the layer and the auxiliary electrode on the base substrate does not overlap, and then the second electrode formed is coupled with the auxiliary electrode through the overlapping electrode, and the second electrode and the auxiliary electrode are equivalent to parallel connection, so the auxiliary electrode The resistance of the second electrode can be reduced, thereby reducing the voltage drop (IR drop).
  • the embodiment of the present disclosure when the organic light-emitting layer in the corresponding area is removed by laser irradiation, by using a mask to cover the area not irradiated by the laser, the mask can effectively isolate the dust (particle) generated when the laser is irradiated, and avoid the laser
  • the contamination of the organic light-emitting layer by the particles generated during irradiation is beneficial to the removal of the particles. Therefore, the embodiments of the present disclosure reduce the resistance of the first electrode without polluting the organic light-emitting layer.

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Abstract

本公开实施例公开了一种有机发光显示面板、其制作方法及显示装置，包括：平坦层，位于衬底基板的一侧；辅助电极，与平坦层位于衬底基板的同一侧，且位于非发光区，且至少部分辅助电极与平坦层在衬底基板上的正投影不交叠；第一电极，位于平坦层远离衬底基板一侧；像素定义层，位于第一电极远离衬底基板一侧，像素定义层具有露出第一电极的像素开口区和具有露出辅助电极的第一通孔；有机发光层，位于第一电极远离衬底基板一侧，有机发光层覆盖部分像素定义层，有机发光层与辅助电极在衬底基板上的正投影不交叠；搭接电极，位于第一通孔内；第二电极，位于有机发光层背离衬底基板一侧，第二电极为整层结构，第二电极通过搭接电极与辅助电极耦接。

Description

一种有机发光显示面板、其制作方法及显示装置
相关申请的交叉引用
本申请要求在2021年2月22日提交中国专利局、申请号为202110197561.5、申请名称为“一种有机发光显示面板、其制作方法及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，特别涉及一种有机发光显示面板、其制作方法及显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)相较于液晶显示器(Liquid Crystal Display，LCD)具有自发光、视角广、轻薄等优点，被认为是下一代显示技术。
现有的OLED器件通常包括第一电极和第二电极，以及位于第一电极和第二电极之间的发光层。根据出光方向不同，其可分为底发射器件和顶发射器件两种。由于顶发射器件可以获得更大的开口率，能显著提高屏幕亮度，近年来成为研究的热门。
发明人发现现有技术中至少存在如下问题：通常像素界定结构限定出像素单元，衬底上的第一电极被像素界定结构分隔，而发光层和第二电极均整层结构，顶发射OLED器件需要很薄的第二电极和反射第一电极来增加光的透过率，而薄的透明第二电极带来的问题就是电阻值较高，电压降(IR drop)比较严重。
发明内容
本公开实施例提供了一种有机发光显示面板，包括：
衬底基板，具有发光区和非发光区；
平坦层，位于所述衬底基板的一侧；
辅助电极，与所述平坦层位于所述衬底基板的同一侧，且位于所述非发光区，且至少部分所述辅助电极与所述平坦层在所述衬底基板上的正投影不交叠；
第一电极，位于所述平坦层远离所述衬底基板的一侧；
像素定义层，位于所述第一电极远离所述衬底基板的一侧，所述像素定义层具有露出所述第一电极的像素开口区和具有露出所述辅助电极的第一通孔；
有机发光层，位于所述第一电极远离所述衬底基板的一侧，所述有机发光层覆盖部分所述像素定义层，所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠；
搭接电极，位于所述第一通孔内；
第二电极，位于所述有机发光层背离所述衬底基板的一侧，所述第二电极为整层结构，所述第二电极通过所述搭接电极与所述辅助电极耦接。
可选地，在本公开实施例提供的上述有机发光显示面板中，所述平坦层具有第一过孔，所述辅助电极位于所述第一过孔内。
可选地，在本公开实施例提供的上述有机发光显示面板中，在垂直于所述衬底基板的方向上，所述第一过孔贯穿所述平坦层，所述辅助电极的厚度与所述平坦层的厚度相同。
可选地，在本公开实施例提供的上述有机发光显示面板中，所述辅助电极的厚度为100nm-700nm。
可选地，在本公开实施例提供的上述有机发光显示面板中，在垂直于所述衬底基板的方向上，所述搭接电极的厚度与所述像素定义层的厚度相同。
可选地，在本公开实施例提供的上述有机发光显示面板中，所述像素定义层的厚度为100nm-700nm。
可选地，在本公开实施例提供的上述有机发光显示面板中，所述第一电 极为反射电极，所述第二电极的材料为透明导电材料，所述辅助电极的材料为金属。
可选地，在本公开实施例提供的上述有机发光显示面板中，所述第一电极为阳极，所述第二电极为阴极。
相应地，本公开实施例还提供了一种有机发光显示面板的制作方法，包括：
提供一衬底基板，所述衬底基板具有发光区和非发光区；
在衬底基板的同一侧形成平坦层和辅助电极；其中，所述辅助电极位于所述非发光区，且至少部分所述辅助电极与所述平坦层在所述衬底基板上的正投影不交叠；
在所述平坦层远离所述衬底基板的一侧形成独立的多个第一电极；
在所述第一电极远离所述衬底基板的一侧形成像素定义层；其中，所述像素定义层具有露出所述第一电极的像素开口区和具有露出所述辅助电极的第一通孔；
在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层；
采用掩膜版遮挡所述有机发光层，所述掩膜版包括开孔区域和遮挡区域，所述开孔区域与所述辅助电极对应，所述遮挡区域对应其它区域；
采用激光照射所述开孔区域，去除所述开孔区域对应的有机发光层，以使所述有机发光层覆盖部分所述像素定义层，且所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠；
在所述掩膜版背离所述衬底基板的一侧形成搭接电极膜层，位于所述掩膜版遮挡区域的搭接电极膜层与位于所述开孔区域的搭接电极膜层断开；
去除所述掩膜版，位于所述开孔区域的搭接电极膜层构成搭接电极；
在所述有机发光层远离所述衬底基板的一侧形成整面覆盖的第二电极，所述第二电极通过所述搭接电极与所述辅助电极耦接。
可选地，在本公开实施例提供的上述制作方法中，所述在衬底基板的同一侧形成平坦层和辅助电极，具体包括：
在所述衬底基板的一侧形成平坦层；
对所述平坦层进行构图，形成贯穿所述平坦层的第一过孔；
在所述第一过孔内形成辅助电极。
可选地，在本公开实施例提供的上述制作方法中，所述激光照射波长为308-355nm，所述激光照射的能量密度为10～6000mJ/cm 2，频率为100～3000Hz，时间为5～1000ns。
可选地，在本公开实施例提供的上述制作方法中，所述在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层，具体为：
通过真空蒸镀或者喷墨印刷的方式在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层。
相应地，本公开实施例还提供了一种显示装置，包括上述任一项有机发光显示面板。
附图说明
图1为本公开实施例提供的一种有机发光显示面板的结构示意图；
图2为本公开实施例提供的一种有机发光显示面板的俯视结构示意图；
图3为本公开实施例提供的有机发光显示面板的制作方法流程图；
图4A-图4I为本公开实施例提供的有机发光显示面板的制作方法执行各步骤的结构示意图。
具体实施方式
为了使本公开的目的，技术方案和优点更加清楚，下面结合附图，对本公开实施例提供的有机发光显示面板、其制作方法及显示装置的具体实施方式进行详细地说明。应当理解，下面所描述的优选实施例仅用于说明和解释本公开，并不用于限定本公开。并且在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。
附图中各层薄膜厚度、大小和形状不反映有机发光显示面板的真实比例， 目的只是示意说明本公开内容。
实施例1：
本公开实施例提供了一种有机发光显示面板，如图1和图2所示，图1为有机发光显示面板点截面示意图，图2为图1中部分膜层的俯视示意图，且图1为图2中沿CC’方向点截面示意图，该有机发光显示面板包括：
衬底基板1，具有发光区AA和非发光区BB；
平坦层2，位于衬底基板1的一侧；
辅助电极3，与平坦层2位于衬底基板1的同一侧，且位于非发光区BB，且至少部分辅助电极3与平坦层2在衬底基板1上的正投影不交叠；
第一电极4，位于平坦层2远离衬底基板1的一侧；
像素定义层5，位于第一电极4远离衬底基板1的一侧，像素定义层5具有露出第一电极4的像素开口区51和具有露出辅助电极3的第一通孔52；
有机发光层6，位于第一电极4远离衬底基板1的一侧，有机发光层6覆盖部分像素定义层5，有机发光层6与辅助电极3在衬底基板1上的正投影不交叠；
搭接电极8’，位于第一通孔52内；
第二电极9，位于有机发光层6背离衬底基板1的一侧，第二电极9为整层结构，第二电极9通过搭接电极8’与辅助电极3耦接。
需要说明的是，第二电极9通过搭接电极8’与辅助电极3耦接是指：第二电极9与搭接电极8’电连接，搭接电极8’与辅助电极3电连接，因此第二电极9与辅助电极3也是电性导通的，即耦接。
本公开实施例1的图1中以第一电极4(阳极)在有机发光层6下方，第二电极9(阴极)在有机发光层6上方为例进行了说明。阴极、阳极互换的方案与本公开实施例类似，在此不再赘述。
具体地，如图1所示，由于第二电极9的厚度远小于像素定义层5的厚度，则第二电极9和辅助电极3之间的段差较大，容易导致第二电极9和辅助电极3之间电性接触不良(虚接)，因此本公开实施例1中通过在第一通孔 52内形成搭接电极8’，搭接电极8’可以显著降低段差，降低第二电极9和辅助电极3之间虚接情况，提高产品良率。
具体地，第一电极4(阳极)为图案化的结构，故衬底基板1上含有第一电极4(阳极)的位置为像素单元的区域，不含有第一电极4(阳极)的位置，虽然覆盖了第二电极9(阴极)，也不会发光，不属于像素单元。具体的，参见图1，不含有第一电极4(阳极)的位置为像素界定区。
在具体实施时，为了不增加有机发光显示面板点厚度，在本公开实施例提供的上述有机发光显示面板中，如图1所示，平坦层2具有第一过孔21，辅助电极3位于第一过孔21内。
在具体实施时，在本公开实施例提供的上述有机发光显示面板中，如图1所示，在垂直于衬底基板1的方向上，第一过孔21可以贯穿平坦层2，辅助电极3的厚度与平坦层2的厚度相同。具体地，辅助电极3和平坦层2的厚度可以均为100nm-700nm。
在具体实施时，在本公开实施例提供的上述有机发光显示面板中，如图1所示，在垂直于衬底基板1的方向上，搭接电极8’的厚度与像素定义层5的厚度相同。具体地，搭接电极8’和像素定义层5的厚度可以均为100nm-700nm。像素定义层5的材料可以选自树脂、聚酰亚胺、有机硅或二氧化硅。
在具体实施时，在本公开实施例提供的上述有机发光显示面板中，如图1所示，第一电极4(阳极)为反射电极，反射电极的材料可以选择Al、Ag、Mg中的一种或几种的混合的合金材料；第二电极9(阴极)的材料为透明导电材料，阴极可以采用镁银混合物、氧化铟锌IZO、氧化铟锡ITO、铝参杂的氧化锌AZO等的一种或几种的复合材料形成；辅助电极的材料为金属，辅助电极3的材料可以选自钼、铝、铜、银、铌中的至少一种。
需要说明的是，在本公开实施例提供的附图中，所示意的各膜层结构的大小、厚度等仅为示意。在工艺实现中，各膜层结构在衬底基板上的投影面积可以相同，也可以不同。可以通过刻蚀工艺实现所需的各膜层结构投影面积；同时，附图所示意的结构也不限定各膜层结构的几何形状，例如可以是 附图所示的矩形，还可以是梯形，或其它刻蚀所形成的形状，同样可通过刻蚀实现。
实施例2：
本公开实施例提供了一种有机发光显示面板的制作方法，如图3所示，包括：
S301、提供一衬底基板，衬底基板具有发光区和非发光区；
S302、在衬底基板的同一侧形成平坦层和辅助电极；其中，辅助电极位于非发光区，且至少部分辅助电极与平坦层在衬底基板上的正投影不交叠；
S303、在平坦层远离衬底基板的一侧形成独立的多个第一电极；
S304、在第一电极远离衬底基板的一侧形成像素定义层；其中，像素定义层具有露出第一电极的像素开口区和具有露出辅助电极的第一通孔；
S305、在像素定义层远离衬底基板的一侧形成整面覆盖的有机发光层；
S306、采用掩膜版遮挡有机发光层，掩膜版包括开孔区域和遮挡区域，开孔区域与辅助电极对应，遮挡区域对应其它区域；
S307、采用激光照射开孔区域，去除开孔区域对应的有机发光层，以使有机发光层覆盖部分像素定义层，且有机发光层与辅助电极在衬底基板上的正投影不交叠；
S308、在掩膜版背离衬底基板的一侧形成搭接电极膜层，位于掩膜版遮挡区域的搭接电极膜层与位于开孔区域的搭接电极膜层断开；
S309、去除掩膜版，位于开孔区域的搭接电极膜层构成搭接电极；
S310、在有机发光层远离衬底基板的一侧形成整面覆盖的第二电极，第二电极通过搭接电极与辅助电极耦接。
本公开实施例提供的上述制作方法，通过采用激光照射去除对应区域的有机发光层，以使所述有机发光层覆盖部分所述像素定义层，且所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠，然后使形成的第二电极通过搭接电极与辅助电极耦接，第二电极与辅助电极相当于并联，因此辅助电极可以降低第二电极的电阻，从而降低电压降(IR drop)。另外，本公开 实施例在采用激光照射去除对应区域的有机发光层时，通过采用掩膜版遮挡未被激光照射的区域，掩膜版可以有效隔离激光照射时产生的粉尘(particle)，避免激光照射时产生的particle对有机发光层的污染，有利于Particle的清除。因此，本公开实施例在不污染有机发光层的基础上实现了降低第一电极的电阻。
实施例3：
本公开实施例提供的一种有机发光显示面板的制作方法，如图4A-图4I所示，包括以下制备步骤：
(1)提供一衬底基板1，衬底基板1具有发光区AA和非发光区BB，在衬底基板1上形成平坦层2，对非发光区BB对应的平坦层2进行构图，形成贯穿所述平坦层2的第一过孔21，如图4A所示。具体的，平坦层2可以利用曝光刻蚀等工艺图案化形成第一过孔21，平坦层2的材料可以为树脂等。
具体地，衬底基板1是制作完成薄膜晶体管阵列的基板。
(2)在第一过孔21内形成辅助电极3，如图4B所示；其中，辅助电极3的材料为金属，辅助电极3的材料可以选自钼、铝、铜、银、铌中的至少一种，在此不限定辅助电极3的具体尺寸，在垂直于衬底基板1的方向上，辅助电极3的厚度可以与平坦层2的厚度相同，也可以与平坦层2的厚度不同。具体的，辅助电极3的厚度可以是在100nm-700nm范围内。
(3)在平坦层2背离衬底基板1一侧形成独立的多个第一电极4以及形成像素定义层5；其中，像素定义层5具有露出第一电极4的像素开口区51和具有露出辅助电极3的第一通孔52，如图4C所示。本公开实施例中以第一电极4为阳极，第二电极为阴极为例进行说明，则辅助电极3为辅助阴极。第一电极4为阴极，第二电极为阳极的方案与本公开类似，在此不再赘述。更具体的，第一电极4可以采用磁控溅射或真空蒸镀等方式形成，并利用曝光刻蚀等工艺图案化，第一电极4为反射电极，反射电极的材料可以选择Al、Ag、Mg中的一种或几种的混合的合金材料。
具体的，像素定义层5的材料可以选自树脂、聚酰亚胺、有机硅或二氧 化硅，在垂直于衬底基板1的方向上，像素定义层5的厚度可以是100nm-700nm。
(4)在像素定义层5远离衬底基板1的一侧形成整面覆盖的有机发光层6，如图4D所示；具体地，有机发光层6可以通过真空蒸镀或者喷墨印刷的方式形成；需要说明的是，有机发光层6可以是多层结构，根据发光的需要，该有机发光层6可以包含空穴注入层(Hole Injection Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)、发光材料层(Emitting Material Layer，EML)、电子传输层(Electron Transport Layer，ETL)和电子注入层(Electron Injection Layer，EIL)。
(5)采用掩膜版7遮挡有机发光层6，掩膜版7包括开孔区域71和遮挡区域72，开孔区域71与辅助电极3对应，遮挡区域72对应其它区域，如图4E所示。
(6)如图4F所示，采用激光照射(箭头所示)开孔区域71，去除开孔区域71对应的有机发光层6，以使所述有机发光层6覆盖部分所述像素定义层5，且所述有机发光层6与所述辅助电极3在所述衬底基板1上的正投影不交叠。具体地，激光照射波长为308-355nm，优选330nm、308nm、355nm等波长；激光照射的能量密度为10～6000mJ/cm 2，频率为100～3000Hz，时间为5～1000ns。
(7)在掩膜版7背离衬底基板1一侧形成搭接电极膜层8，在垂直于衬底基板1的方向上，搭接电极膜层8的厚度可以与像素定义层5的厚度相同，由于像素定义层5具有露出辅助电极3的第一通孔52，第一通孔52与开孔区域71相对应，因此位于掩膜版7遮挡区域72的搭接电极膜层8与位于开孔区域71的搭接电极膜层8断开，如图4G所示。
(8)去除掩膜版7，位于掩膜版7遮挡区域72的搭接电极膜层8一并被去除，位于开孔区域71的搭接电极膜层8保留下来形成搭接电极8’，搭接电极8’位于第一通孔52内，如图4H所示。具体地，在垂直于衬底基板1的方向上，搭接电极8’的厚度与像素定义层5的厚度相同。在步骤(6)采用 激光照射有机发光层6时会产生particle，虽然掩膜版7可以隔离particle，但是在辅助电极3上会有残余particle，搭接电极8’可对残余particle形成包覆作用，避免后续形成的第二电极9被particle贯穿，导致第二电极9和辅助电极3电性接触不良的问题；另外，由于第二电极9的厚度远小于像素定义层5的厚度，则第二电极9和辅助电极3之间的段差较大，容易导致第二电极9和辅助电极3之间电性接触不良(虚接)，本公开通过在第一通孔52内形成搭接电极8’，搭接电极8’可以显著降低段差，降低第二电极9和辅助电极3之间虚接情况，提高产品良率。
(9)在所述有机发光层6远离所述衬底基板1的一侧形成整面覆盖的第二电极9，第二电极9通过搭接电极8’与辅助电极3耦接，如图4I所示。具体地，第二电极9为阴极，第二电极的材料为透明导电材料，阴极可以采用镁银混合物、氧化铟锌IZO、氧化铟锡ITO、铝参杂的氧化锌AZO等的一种或几种的复合材料形成。
本公开实施例提供的上述制作方法，通过采用激光照射去除对应区域的有机发光层，以使所述有机发光层覆盖部分所述像素定义层，且所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠，然后使形成的第二电极通过搭接电极与辅助电极耦接，第二电极与辅助电极相当于并联，因此辅助电极可以降低第二电极的电阻，从而降低电压降(IR drop)。另外，本公开实施例在采用激光照射去除对应区域的有机发光层时，通过采用掩膜版遮挡未被激光照射的区域，掩膜版可以有效隔离激光照射时产生的粉尘(particle)，避免激光照射时产生的particle对有机发光层的污染，有利于Particle的清除。因此，本公开实施例在不污染有机发光层的基础上实现了降低第一电极的电阻。
实施例4：
本公开实施例提供了一种显示装置，包括上述任一种有机发光显示面板。
该显示装置解决问题的原理与前述有机发光显示面板相似，因此该显示装置的实施可以参见前述有机发光显示面板的实施，重复之处在此不再赘述。
在具体实施时，本公开实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
本公开实施例提供的有机发光显示面板、其制作方法及显示装置，通过采用激光照射去除对应区域的有机发光层，以使所述有机发光层覆盖部分所述像素定义层，且所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠，然后使形成的第二电极通过搭接电极与辅助电极耦接，第二电极与辅助电极相当于并联，因此辅助电极可以降低第二电极的电阻，从而降低电压降(IR drop)。另外，本公开实施例在采用激光照射去除对应区域的有机发光层时，通过采用掩膜版遮挡未被激光照射的区域，掩膜版可以有效隔离激光照射时产生的粉尘(particle)，避免激光照射时产生的particle对有机发光层的污染，有利于Particle的清除。因此，本公开实施例在不污染有机发光层的基础上实现了降低第一电极的电阻。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (13)

  1. 一种有机发光显示面板，其中，包括：
    衬底基板，具有发光区和非发光区；
    平坦层，位于所述衬底基板的一侧；
    辅助电极，与所述平坦层位于所述衬底基板的同一侧，且位于所述非发光区，且至少部分所述辅助电极与所述平坦层在所述衬底基板上的正投影不交叠；
    第一电极，位于所述平坦层远离所述衬底基板的一侧；
    像素定义层，位于所述第一电极远离所述衬底基板的一侧，所述像素定义层具有露出所述第一电极的像素开口区和具有露出所述辅助电极的第一通孔；
    有机发光层，位于所述第一电极远离所述衬底基板的一侧，所述有机发光层覆盖部分所述像素定义层，所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠；
    搭接电极，位于所述第一通孔内；
    第二电极，位于所述有机发光层背离所述衬底基板的一侧，所述第二电极为整层结构，所述第二电极通过所述搭接电极与所述辅助电极耦接。
  2. 如权利要求1所述的有机发光显示面板，其中，所述平坦层具有第一过孔，所述辅助电极位于所述第一过孔内。
  3. 如权利要求2所述的有机发光显示面板，其中，在垂直于所述衬底基板的方向上，所述第一过孔贯穿所述平坦层，所述辅助电极的厚度与所述平坦层的厚度相同。
  4. 如权利要求3所述的有机发光显示面板，其中，所述辅助电极的厚度为100nm-700nm。
  5. 如权利要求1所述的有机发光显示面板，其中，在垂直于所述衬底基板的方向上，所述搭接电极的厚度与所述像素定义层的厚度相同。
  6. 如权利要求5所述的有机发光显示面板，其中，所述像素定义层的厚度为100nm-700nm。
  7. 如权利要求1所述的有机发光显示面板，其中，所述第一电极为反射电极，所述第二电极的材料为透明导电材料，所述辅助电极的材料为金属。
  8. 如权利要求7所述的有机发光显示面板，其中，所述第一电极为阳极，所述第二电极为阴极。
  9. 一种显示装置，其中，包括如权利要求1-8任一项所述的有机发光显示面板。
  10. 一种有机发光显示面板的制作方法，其中，包括：
    提供一衬底基板，所述衬底基板具有发光区和非发光区；
    在衬底基板的同一侧形成平坦层和辅助电极；其中，所述辅助电极位于所述非发光区，且至少部分所述辅助电极与所述平坦层在所述衬底基板上的正投影不交叠；
    在所述平坦层远离所述衬底基板的一侧形成独立的多个第一电极；
    在所述第一电极远离所述衬底基板的一侧形成像素定义层；其中，所述像素定义层具有露出所述第一电极的像素开口区和具有露出所述辅助电极的第一通孔；
    在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层；
    采用掩膜版遮挡所述有机发光层，所述掩膜版包括开孔区域和遮挡区域，所述开孔区域与所述辅助电极对应，所述遮挡区域对应其它区域；
    采用激光照射所述开孔区域，去除所述开孔区域对应的有机发光层，以使所述有机发光层覆盖部分所述像素定义层，且所述有机发光层与所述辅助电极在所述衬底基板上的正投影不交叠；
    在所述掩膜版背离所述衬底基板的一侧形成搭接电极膜层，位于所述掩膜版遮挡区域的搭接电极膜层与位于所述开孔区域的搭接电极膜层断开；
    去除所述掩膜版，位于所述开孔区域的搭接电极膜层构成搭接电极；
    在所述有机发光层远离所述衬底基板的一侧形成整面覆盖的第二电极， 所述第二电极通过所述搭接电极与所述辅助电极耦接。
  11. 如权利要求10所述的制作方法，其中，所述在衬底基板的同一侧形成平坦层和辅助电极，具体包括：
    在所述衬底基板的一侧形成平坦层；
    对所述平坦层进行构图，形成贯穿所述平坦层的第一过孔；
    在所述第一过孔内形成辅助电极。
  12. 如权利要求10所述的制作方法，其中，所述激光照射波长为308-355nm，所述激光照射的能量密度为10～6000mJ/cm 2，频率为100～3000Hz，时间为5～1000ns。
  13. 如权利要求10所述的制作方法，其中，所述在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层，具体为：
    通过真空蒸镀或者喷墨印刷的方式在所述像素定义层远离所述衬底基板的一侧形成整面覆盖的有机发光层。
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