Classifications

• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C1/00—Making non-ferrous alloys
  • C22C1/02—Making non-ferrous alloys by melting
  • C22C1/026—Alloys based on aluminium
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/02—Alloys based on aluminium with silicon as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
  • C22C21/08—Alloys based on aluminium with magnesium as the next major constituent with silicon
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/12—Alloys based on aluminium with copper as the next major constituent
  • C22C21/14—Alloys based on aluminium with copper as the next major constituent with silicon
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/12—Alloys based on aluminium with copper as the next major constituent
  • C22C21/16—Alloys based on aluminium with copper as the next major constituent with magnesium
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
  • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
  • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
  • C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
  • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
  • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
  • C22F1/047—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with magnesium as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
  • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
  • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
  • C22F1/057—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with copper as the next major constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
  • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
  • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
  • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
  • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
  • C22F1/05—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys of the Al-Si-Mg type, i.e. containing silicon and magnesium in approximately equal proportions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/015—Manufacture or treatment of bond wires
  • H10W72/01565—Thermally treating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/075—Connecting or disconnecting of bond wires
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/50—Bond wires
  • H10W72/531—Shapes of wire connectors
  • H10W72/533—Cross-sectional shape
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/50—Bond wires
  • H10W72/531—Shapes of wire connectors
  • H10W72/533—Cross-sectional shape
  • H10W72/534—Cross-sectional shape being rectangular
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/50—Bond wires
  • H10W72/531—Shapes of wire connectors
  • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/50—Bond wires
  • H10W72/551—Materials of bond wires
  • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
  • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/50—Bond wires
  • H10W72/551—Materials of bond wires
  • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
  • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
  • H10W72/951—Materials of bond pads
  • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
  • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

• the present invention relates to Al wiring materials. Furthermore, it relates to a semiconductor device including the Al wiring material.
• Al aluminum
• Cu copper
• Al wires (circular) and Al strips (flat and elliptical) used in industrial equipment such as transport equipment and robots have mechanical properties such as breaking strength and elongation, as well as electrical conductivity and thermal conductivity, depending on the purpose of use. etc. is required.
• bonding wires or bonding ribbons are used to connect electrodes formed on a semiconductor chip to electrodes on lead frames or substrates.
• Al is mainly used as the material.
• Patent Literature 1 shows an example of using an Al bonding wire with a diameter of 300 ⁇ m in a power semiconductor module.
• wedge bonding is used for both the first connection with the electrodes on the semiconductor chip and the second connection with the electrodes on the lead frame and substrate as the bonding method. is used.
• Al wiring material The above-mentioned Al wire, Al strip, Al bonding wire, Al bonding ribbon, etc. are collectively referred to as Al wiring material hereinafter.
• Power semiconductor devices that use Al wiring materials are often used as electronic devices such as automobile control devices, air conditioners, and solar power generation systems.
• these semiconductor devices the joints between the wiring members and the members to be connected are exposed to high temperature during operation of the devices.
• the high voltage is turned on and off at high speed, a severe environment is created in which the temperature is repeatedly raised and lowered.
• a material made of only high-purity Al is used as a wiring material, it is difficult to use the wiring material in a high-temperature environment because the wiring material tends to soften in the temperature environment during operation of the device.
• Patent Document 2 discloses an Al bonding wire whose mechanical strength is improved by adding 0.05 to 1% by weight of scandium (Sc) to Al for precipitation hardening.
• Patent Document 3 discloses that an Al wiring material containing a total of 800 ppm by weight or less of one or more of nickel (Ni), silicon (Si) and phosphorus (P) has good bonding strength and weather resistance.
• Patent Document 4 contains 0.01 to 0.2% by weight of iron (Fe) and 1 to 20% by weight of Si, and the solid solution amount of Fe is 0.01 to 0.06% by weight,
• An Al bonding wire is disclosed in which the precipitation amount of Fe is 7 times or less the solid solution amount and the average crystal grain size is 6 to 12 ⁇ m, and it is described that the wire exhibits good bonding reliability. ing.
• JP-A-2002-314038 Japanese Patent Application Publication No. 2016-511529 JP 2016-152316 A JP 2014-129578 A
• Al wiring materials are becoming stricter as industrial equipment and electronic components become more sophisticated and their scope of application expands.
• Al wiring materials used in electronic parts such as semiconductor devices
• a large-diameter Al wiring material is used for a high-output power device application or an alternative application for reducing the weight of a Cu wiring material.
• Ni--Pd nickel-palladium
• Cu etc. are mainly used for the material of the electrodes on the semiconductor chip. is increasingly difficult.
• improvement of bondability is required.
• Al wiring materials are required to improve the initial bondability and the bonding reliability of the joints in a high-temperature environment.
• an Al wiring material is bonded to an electrode on a semiconductor chip, and it is important to increase the bonding strength of the bonding portion between the Al wiring material and the electrode.
• joint strength measured by a shear test in which the joint is sheared and broken hereinafter referred to as "shear strength" is generally used.
• shear strength measured by shearing the joint is effective as an index of the apparent joint strength. It is difficult to accurately grasp the intensity.
• the inventors investigated the relationship between bonding behavior and delamination failure, and found that one of the causes of delamination failure was the presence of an area with insufficient bonding at the interface of the joint. That is, in the case where peeling failure occurs, when observing the fracture surface on the electrode side after the shear test, it is found that there is an unbonded area (hereinafter also referred to as "hollow hole") in which metal bonding is not obtained in part of the bonded portion. It was found that the frequency of occurrence of In addition to being a factor in reducing productivity, an increase in voids in the joint may cause cracks starting from the unbonded area due to temperature changes during operation of the semiconductor device, and if it progresses further, the joint may be damaged.
• a power cycle test is carried out as one of the techniques for evaluating the joint reliability of joints in a high-temperature environment. This is a test in which rapid heating and cooling are repeated by repeating ON/OFF of the voltage. Repetition of rapid heating and cooling poses a problem that the bonding strength at the bonding portion of the Al wiring material decreases, and defects such as cracks and peeling occur near the bonding interface. For example, regarding durability in a power cycle test, under severe conditions exceeding 10,000 cycles, failures such as cracks and peeling occur at joints of Al wiring materials, which hinders the practical use of power devices.
• the bondability of the Al wiring material in addition to increasing the shear strength, it is important to improve the bonding reliability of the joint in a high-temperature environment by reducing voids during bonding. It is useful for improving the function, quality, reliability, etc. of devices.
• An object of the present invention is to provide an Al wiring material that provides sufficient bonding reliability at the junction in a high-temperature environment during operation of a semiconductor device.
• the inventors of the present invention found that the above problems can be solved by an Al wiring material having the following structure. That is, the present invention includes the following contents. [1] When one or more of Pd and Pt are contained, and the contents of Pd and Pt are x1a [mass ppm] and x1b [mass ppm], respectively, 3 ⁇ x1a ⁇ 90 or 10 ⁇ x1b ⁇ 250, and 3 ⁇ (x1a+x1b) ⁇ 300, The balance is an Al wiring material containing Al, An Al wiring material having an average crystal grain size of 3 to 35 ⁇ m in a cross section perpendicular to the longitudinal direction of the Al wiring material.
• the crystal orientation ⁇ 111> with an angle difference of 15° or less with respect to the longitudinal direction of the Al wiring material has an orientation ratio of 0.5% or more and 35% or less.
• the Al wiring material according to [1] or [2] which has a tensile strength of 25 MPa or more and 95 MPa or less.
• the total content is x2 [mass ppm]
• an Al wiring material that provides sufficient bonding reliability of the bonding portion in a high-temperature environment during operation of the semiconductor device.
• the Al wiring material of the present invention contains at least one of Pd and Pt, and when the contents of Pd and Pt are x1a [mass ppm] and x1b [mass ppm], respectively, 3 ⁇ x1a ⁇ 90 or 10 ⁇ It is characterized by satisfying x1b ⁇ 250, satisfying 3 ⁇ (x1a+x1b) ⁇ 300, the remainder containing Al, and having an average grain size of 3 to 35 ⁇ m in a cross section perpendicular to the longitudinal direction of the Al wiring material.
• the Al wiring material it is necessary to achieve both improved bondability immediately after bonding (hereinafter referred to as "initial bonding") and reduction of chip damage, and furthermore, after bonding, the semiconductor device is operated in a high-temperature environment. It is required to improve the joint reliability of the joint (hereinafter also referred to as “high-temperature reliability of the joint”) at the same time. Regarding the bondability, it is important to reduce the unbonded area (“hollow”) at the bond in addition to increasing the shear strength.
• the Al wiring material of the present invention containing a predetermined amount of one or more of Pd and Pt (hereinafter also referred to as "first group elements") and having an average crystal grain size within a specific range, a load and ultrasonic waves are applied.
• first group elements Pd and Pt
• first group elements Pd and Pt
• the diffusion at the bonding interface is promoted to suppress the occurrence of unbonded regions at the bonding interface, and good bonding can be obtained over the entire bonding interface.
• the unbonded area the ratio of the area of the area where metallic bonding is obtained and directly contributes to bonding to the area of the bonding interface (hereinafter referred to as "effective bonding area ratio" or "EBR"). Effective Bonded Area Ratio (EBR) can be increased.
• the bonding effective area used for the trial calculation of the bonding effective area ratio can be easily calculated as the area excluding the unbonded area from the bonding interface area.
• the present inventors have found that increasing the EBR is highly effective in improving the high-temperature reliability of the junction.
• the growth of the Al oxide film on the surface of the Al wiring material is suppressed, and even if the Al oxide film is formed, the Al oxide film is easily destroyed by ultrasonic vibration during bonding. Therefore, it is considered that diffusion of Al from the Al wiring material to the electrode side is promoted.
• the effect of setting the crystal grain size of the Al wiring material to a specific range the crystal grain boundaries that resist deformation during bonding are reduced, and the efficiency of transmitting ultrasonic waves to the bonding interface is increased. It is thought that the destruction of the oxide film of the electrode is accelerated.
• the effect of containing a predetermined amount of the first group element and the effect of setting the crystal grain size within a specific range act synergistically, and the high-temperature reliability of the joint can be remarkably improved. can.
• EBR is increased by obtaining a high synergistic effect by combining the inclusion of the first group element and the control of the average crystal grain size in the cross section perpendicular to the longitudinal direction of the Al wiring material (hereinafter referred to as "C cross section"). It becomes easy to improve the bondability of the initial bonding. Even with an Al wiring material containing the first group element, when the average crystal grain size of the C cross section is smaller than the range specified in the present application, the oxide film is not sufficiently destroyed during bonding, and the effect of improving the EBR is small. was confirmed.
• the Al wiring material has a large crystal grain size and low tensile strength, it is possible to increase the area of the bonding interface if the material is high-purity Al or a conventional Al wiring material containing Ni. It has been confirmed that the effect of improving the EBR is small because the
• the average crystal grain size in the C cross section of the Al wiring material is related to the shape change of the C-section and EBR. That is, rather than controlling the structure and crystal grain size of the cross section parallel to the longitudinal direction of the Al wiring material, the effect of the present invention is to control the average crystal grain size of the C cross section in combination with the content of the first group element. It is important to play
• the EBR can be increased even when the Al wiring material is joined at room temperature, and it becomes possible to use a heat-sensitive resin substrate or the like.
• the EBR can be increased. Advantages such as being able to increase the
• the EBR at the junction with the electrode on the semiconductor chip is obtained as the ratio (M2/M1) of the area M2 where metal bonding is obtained to the area M1 of the bonding interface.
• the Al wiring material of the present invention contains one or more of Pd and Pt as the first group elements, and when the contents of Pd and Pt are x1a [mass ppm] and x1b [mass ppm], respectively, 3 ⁇ satisfies x1a ⁇ 90 or 10 ⁇ x1b ⁇ 250, and satisfies 3 ⁇ (x1a+x1b) ⁇ 300.
• Preferred ranges of x1a and x1b are shown below. Both the preferred range of and the preferred range of x1b may be satisfied.
• the Pd content in the Al wiring material is 3 ppm by mass or more. If x1a is less than 3 ppm by mass, the effect of increasing the EBR and the effect of improving the high-temperature reliability of the joint are not sufficient.
• x1a is preferably 4 mass ppm or more, 5 mass ppm or more, or 6 mass ppm or more, more preferably more than 6 mass ppm, 8 mass ppm or more, 10 mass ppm or more, 15 mass ppm or more, or 20 mass ppm or more.
• the value of (x1a+x1b) in relation to x1b is within the range of the present invention, when x1a exceeds 6 mass ppm, the effect of further increasing EBR can be obtained.
• x1a is 90 mass ppm or less.
• x1a exceeds 90 ppm by mass, deformation of the Al wiring material becomes uneven during bonding, and EBR tends to decrease.
• x1a is preferably 85 mass ppm or less, 80 mass ppm or less, 75 mass ppm or less, or 70 mass ppm or less, more preferably less than 70 mass ppm, 68 mass ppm or less, 66 mass ppm or less, or 65 mass ppm or less.
• the value of (x1a+x1b) in relation to x1b is within the range of the present invention, when x1a is less than 70 ppm by mass, the effect of further increasing EBR can be obtained.
• the content of Pd in the Al wiring material, ie, x1a satisfies 3 ⁇ x1a ⁇ 90, more preferably 6 ⁇ x1a ⁇ 70.
• the content of Pt in the Al wiring material is 10 ppm by mass or more. If x1b is less than 10 ppm by mass, the effect of increasing the EBR and the effect of improving the high-temperature reliability of the junction are not sufficient.
• x1b is preferably 12 mass ppm or more, 14 mass ppm or more, 16 mass ppm or more, 18 mass ppm or more, or 20 mass ppm or more, more preferably more than 20 mass ppm, 25 mass ppm or more, 30 mass ppm or more, 35 mass ppm ppm or more or 40 mass ppm or more.
• x1b exceeding 20 ppm by mass has the effect of further increasing EBR.
• x1b is 250 ppm by mass or less.
• x1b exceeds 250 ppm by mass, deformation of the Al wiring material becomes uneven during bonding, and EBR tends to decrease.
• x1b is preferably 240 mass ppm or less, 230 mass ppm or less, 220 mass ppm or less, 210 mass ppm or less or 200 mass ppm or less, more preferably less than 200 mass ppm, 190 mass ppm or less, 180 mass ppm or less, 160 mass ppm ppm or less or 150 mass ppm or less.
• the value of (x1a+x1b) in relation to x1a is within the range of the present invention, when x1b is less than 200 ppm by mass, the effect of further increasing EBR can be obtained.
• the content of Pt in the Al wiring material that is, x1b satisfies 10 ⁇ x1b ⁇ 250, more preferably 20 ⁇ x1b ⁇ 200.
• the total content of Pd and Pt in the Al wiring material is 3 ppm by mass or more. If (x1a+x1b) is less than 3 ppm by mass, the effect of increasing the EBR and the effect of improving the high-temperature reliability of the junction are not sufficient.
• (x1a+x1b) is preferably 5 mass ppm or more or 6 mass ppm or more, more preferably more than 6 mass ppm, 8 mass ppm or more, 10 mass ppm or more, 15 mass ppm or more, or 20 mass ppm or more.
• the upper limit of (x1a+x1b) is 300 mass ppm or less, preferably 290 mass ppm or less, 280 mass ppm or less, or 270 mass ppm or less, more preferably 270 mass ppm, provided that x1a and x1b satisfy the above ranges. less than, 260 mass ppm or less, or 250 mass ppm or less.
• Pd is more effective than Pt in promoting the destruction and diffusion of the oxide film at the bonding interface.
• the preferred range of the Pd content x1a is lower than the preferred range of the Pt content x1b in order to increase the EBR. If the Pd content x1a exceeds 90 ppm by mass, variations occur in the surface oxide film, structure, etc. of the Al wiring material, and non-uniform deformation is likely to occur. As a result, EBR is reduced.
• the average crystal grain size in the C section of the Al wiring material is 3 to 35 ⁇ m. If the average crystal grain size is less than 3 ⁇ m, the unbonded region tends to increase during bonding, and the effect of increasing the EBR is small.
• the average crystal grain size in the C section is preferably 3.5 ⁇ m or more, 4 ⁇ m or more, 4.5 ⁇ m or more, 5 ⁇ m or more, 6 ⁇ m or more, or 7 ⁇ m or more, more preferably 8 ⁇ m or more, 8.5 ⁇ m or more, or 9 ⁇ m or more.
• the upper limit of the average grain size is preferably 34 ⁇ m or less, 33 ⁇ m or less, 32 ⁇ m or less, or 31 ⁇ m or less, more preferably 30 ⁇ m or less, 28 ⁇ m or less, 26 ⁇ m or less, or 25 ⁇ m or less.
• the average crystal grain size in the C cross section is in the range of 8 to 30 ⁇ m, it becomes easy to stably manufacture the Al wiring material during mass production.
• the average crystal grain size in the C cross section of the Al wiring material is 3-35 ⁇ m, more preferably 8-30 ⁇ m.
• the average crystal grain size in the C cross section of the Al wiring material tends to be within the above preferred range by performing refining heat treatment in the middle of wire drawing and in the vicinity of the final wire diameter.
• the average crystal grain size in the C cross section of the Al wiring material is obtained by calculating the equivalent circle diameter of each crystal grain using the backscattered electron diffraction (EBSD) method and arithmetically averaging them. rice field.
• the average crystal grain size in the C section was the arithmetic mean value of each value obtained by measuring five or more C sections.
• the measurement plane (C section) five or more measurement samples are obtained from the Al wiring material to be measured at intervals of 1 m or more in the longitudinal direction of the Al wiring material, and the measurement data It is preferable to ensure the objectivity of
• the EBR can be further increased by setting the orientation ratio of the ⁇ 111> crystal orientation in the cross section (C cross section) perpendicular to the longitudinal direction of the Al wiring material to a specific range.
• the angle difference with respect to the longitudinal direction of the Al wiring material is 15° or less among the crystal orientations in the longitudinal direction of the Al wiring material.
• 111> crystal orientation is preferably 0.5 to 35%.
• EBR can be further increased by controlling the structure to keep the orientation ratio of the ⁇ 111> crystal orientation low, and in particular, a high effect of improving the EBR can be obtained even with a large-diameter Al wiring material.
• the orientation ratio of the ⁇ 111> crystal orientation can be measured using the EBSD method.
• An apparatus used for the EBSD method consists of a scanning electron microscope and a detector attached thereto.
• the EBSD method is a technique for determining the crystal orientation at each measurement point by projecting a diffraction pattern of backscattered electrons generated when a sample is irradiated with an electron beam onto a detector and analyzing the diffraction pattern.
• Dedicated software (such as OIM analysis manufactured by TSL Solutions Co., Ltd.) can be used to analyze the data obtained by the EBSD method.
• the orientation ratio of a specific crystal orientation can be calculated by using the C section of the Al wiring material as an inspection surface and using analysis software attached to the apparatus.
• the orientation ratio of ⁇ 111> crystal orientation is defined as the area ratio of ⁇ 111> crystal orientation when the measured area is the population.
• the area ratio of the ⁇ 111> crystal orientation which was calculated as a population of the area of only the crystal orientations that could be identified based on a certain degree of reliability, was calculated as the orientation ratio of the ⁇ 111> crystal orientation. and In the process of obtaining the orientation ratio, calculation was performed by excluding portions where the crystal orientation could not be measured, or portions where the crystal orientation could be measured but the reliability of the orientation analysis was low.
• the orientation ratio of the ⁇ 111> crystal orientation in the C cross section was the arithmetic average value of the orientation ratio values obtained by measuring five or more C cross sections.
• the measurement sample is obtained from the Al wiring material to be measured at intervals of 1 m or more in the longitudinal direction of the Al wiring material. It is preferable to ensure the objectivity of the data.
• the load and ultrasonic waves applied during bonding are less likely to be transmitted to the center of the bonding interface, and the area of the unbonded region (hollow) tends to increase.
• the orientation ratio of the ⁇ 111> crystal orientation By reducing the orientation ratio of the ⁇ 111> crystal orientation, the transmission efficiency of the ultrasonic vibration is improved even with a large-diameter Al wiring material, and the EBR can be increased.
• This crystal orientation effect can be enjoyed more when the wire diameter is 250 ⁇ m or more, and can be more enjoyed when the wire diameter is 300 ⁇ m or more or 350 ⁇ m or more.
• the orientation ratio of ⁇ 111> crystal orientation with an angle difference of 15° or less with respect to the longitudinal direction of the Al wiring material is preferably 0.5% or more and 35% or less.
• the orientation ratio of the ⁇ 111> crystal orientation is preferably less than 35%, 34% or less, 32% or less, or 30% or less, more preferably less than 30%, 28% or less, 26% or less, 24% or less, 22% or less or 20% or less.
• the lower limit of the orientation ratio of the ⁇ 111> crystal orientation is preferably 0.6% or more, 0.8% or more, 1% or more, 1.5% or more, 2% or more, or 2.5% or more, more preferably 3 % or more, 3.5% or more, or 4% or more.
• the orientation ratio of the ⁇ 111> crystal orientation is 3% or more and less than 30%, the effect of increasing the EBR can be further improved.
• the orientation ratio of the ⁇ 111> crystal orientation with an angle difference of 15° or less with respect to the longitudinal direction of the Al wiring material is 0.5% or more and 35 % or less, more preferably 3% or more and less than 30%.
• the Al wiring material of the present invention preferably has a tensile strength in the range of 25 MPa or more and 95 MPa or less.
• the high-temperature reliability of the joint is further improved by setting the tensile strength within the above preferred range. can be improved.
• High-temperature reliability can be evaluated by examining changes in the bonding strength or electrical properties of the Al wiring material after conducting a power cycle test.
• the Al wiring material of the present invention containing a predetermined amount of the first group element and having an average crystal grain size in the C cross section within a specific range, the occurrence of unbonded regions (hollow holes) during bonding can be reduced. It is possible to increase the EBR at the initial bonding.
• the tensile strength is in the above range, it is possible to suppress the development of cracks in the vicinity of the joint portion of the Al wiring material, so it is speculated that the high-temperature reliability of the joint portion can be further improved. be.
• the unbonded region generated at the time of bonding is reduced, and the tensile strength is within the above range. It is thought that the deformation of the material or the destruction of the oxide film is accelerated, and good metal bonding with the electrode at the bonding interface is obtained, so that crack growth in the power cycle test is suppressed.
• the Al wiring material of the present invention preferably has a tensile strength in the range of 25 MPa or more and 95 MPa or less. If the tensile strength is more than 95 MPa, the Al wiring material is hard and the effect of suppressing crack growth in the power cycle test cannot be sufficiently obtained.
• the tensile strength of the Al wiring material is preferably less than 95 MPa, 94 MPa or less, 92 MPa or less, 90 MPa or less, 88 MPa or less, or 86 MPa or less, more preferably 85 MPa or less, 84 MPa or less, 82 MPa or less, or 80 MPa or less.
• the tensile strength of the Al wiring material is preferably 26 MPa or more or 28 MPa or more, more preferably 30 MPa or more, 32 MPa or more, 34 MPa or more, 36 MPa or more, 38 MPa or more, or 40 MPa or more.
• the tensile strength of the Al wiring material is 30 MPa or more and 85 MPa or less, the effect of further increasing the EBR is obtained, which is beneficial.
• the tensile strength of the Al wiring material is preferably 25 MPa or more and 95 MPa or less, more preferably 30 MPa or more and 85 MPa or less.
• the Al wiring material of the present invention may further contain one or more of Mg, Mn and Cu.
• the Al wiring material of the present invention containing a predetermined amount of first group elements and having an average crystal grain size in a C cross section within a specific range, one or more of Mg, Mn, and Cu (also referred to as "second group elements"). ) can further improve the high-temperature reliability of the junction.
• the Al wiring material of the present invention can increase the number of cycles until failure occurs by 1.5 times or more in the power cycle test.
• the Al wiring material of the present invention containing a predetermined amount of the first group element and having an average crystal grain size in the C cross section within a specific range further contains a predetermined amount of the second group element, thereby improving the high-temperature reliability of the joint. A synergistic effect of even greater improvement is realized.
• the Al wiring material of the present invention it is preferable to satisfy 200 ⁇ x2 ⁇ 6000, where x2 [mass ppm] is the total content of the second group elements. If the total content of the second group elements, that is, x2 is less than 200 ppm by mass, the effect of further improving the high-temperature reliability of the joint cannot be sufficiently obtained.
• x2 is preferably 220 mass ppm or more, 240 mass ppm or more, 250 mass ppm or more, 260 mass ppm or more, or 280 mass ppm or more, more preferably 300 mass ppm or more, 320 mass ppm or more, 340 mass ppm or more, 360 mass ppm ppm or more, 380 mass ppm or more, or 400 mass ppm or more.
• x2 exceeds 6000 mass ppm, chip damage tends to occur during bonding of the Al wiring material.
• x2 is preferably 5800 mass ppm or less, 5600 mass ppm or less, 5400 mass ppm or less or 5200 mass ppm or less, more preferably 5000 mass ppm or less, 4800 mass ppm or less, 4600 mass ppm or less, 4400 mass ppm or less, 4200 mass ppm ppm or less or 4000 mass ppm or less.
• x2 is 300 mass ppm or more and 5000 mass ppm or less, the high-temperature reliability of the junction can be significantly improved, which is beneficial.
• the total x2 [mass ppm] of the content of the second group elements in the Al wiring material preferably satisfies 200 ⁇ x2 ⁇ 6000, more preferably 300 ⁇ x2 ⁇ Meet 5000.
• the Al wiring material of the present invention may further contain one or more of Fe, Si and Ni.
• the Al wiring material of the present invention containing a predetermined amount of first group elements and having an average crystal grain size in the C cross section within a specific range, one or more of Fe, Si and Ni (also referred to as "third group elements"). ) can further improve the high-temperature reliability of the joint when the Al wiring material has a small diameter.
• the third group element it is possible to improve the productivity in the high-speed wire drawing process in the production of the Al wiring material, and to enhance the adaptability to mass production.
• the wire diameter of the Al wiring material which can more enjoy the above-described effects due to the inclusion of the third group element, is preferably 200 ⁇ m or less, and further, when it is 120 ⁇ m or less, a higher effect can be received.
• the deformation of the Al wiring material tends to progress early due to the load during bonding, stress concentration occurs at the neck portion corresponding to the bonding end portion, and cracks from the neck portion are promoted. tend to On the other hand, by containing the third group element, even if the Al wiring material has a small diameter, the deformation of the neck portion is reduced and the stress concentration is reduced. This is considered to be an improvement. In this regard, it was confirmed that the effect of further improving the high-temperature reliability of the joint cannot be sufficiently obtained by only adding the third group element.
• the unbonded region at the bonding interface is reduced, resulting in a neck portion (originally not bonded).
• the inclusion of the third group element realizes a synergistic effect of further improving the high-temperature reliability of the joint.
• the Al wiring material of the present invention it is preferable to satisfy 10 ⁇ x3 ⁇ 2000, where x3 [mass ppm] is the total content of the third group elements. If the total content of the third group elements, i.e., x3, is less than 10 ppm by mass, the effect of further improving the high-temperature reliability of the joint cannot be sufficiently obtained when the Al wiring material has a small diameter.
• x3 is preferably 12 mass ppm or more, 14 mass ppm or more, 16 mass ppm or more, or 18 mass ppm or more, more preferably 20 mass ppm or more, 22 mass ppm or more, 24 mass ppm or more, 26 mass ppm or more, 28 mass ppm ppm or more or 30 mass ppm or more.
• x3 exceeds 2000 ppm by mass, the effect of improving productivity in the high-speed wire drawing process tends to be insufficient.
• x3 is preferably 1800 mass ppm or less or 1600 mass ppm or less, more preferably 1500 mass ppm or less, 1400 mass ppm or less, 1200 mass ppm or less or 1000 mass ppm or less.
• x3 is 20 mass ppm or more and 1500 mass ppm or less, particularly 20 mass ppm or more and 1000 mass ppm or less, the high-temperature reliability of the joint can be further improved when the Al wiring material has a small diameter. can be beneficial.
• the total x3 [mass ppm] of the content of the third group elements in the Al wiring material preferably satisfies 10 ⁇ x3 ⁇ 2000, more preferably 20 ⁇ x3 ⁇ 1500, more preferably 20 ⁇ x3 ⁇ 1000.
• evaluation of the high-temperature reliability of the junction is performed by a power cycle test.
• a power cycle test is a test in which rapid heating and cooling are repeated for a semiconductor device to which an Al wiring material is joined. Heating is carried out for 2 seconds until the temperature of the joint portion of the Al wiring material in the semiconductor device reaches 140°C, and then cooling is carried out for 25 seconds until the temperature of the joint portion reaches 30°C. This heating/cooling cycle is repeated 50,000 or 100,000 times.
• the joint After the power cycle test, measure the shear strength of the joint at the first connection with the electrode on the semiconductor chip to evaluate the high temperature reliability.
• the Al wiring material of the present invention which contains a predetermined amount of the first group element and has an average crystal grain size in the C cross section within a specific range, even when the above cycle is repeated 50,000 times or 100,000 times, the joint is It exhibits good shear strength and can achieve excellent high-temperature reliability.
• the balance of the Al wiring material of the present invention contains Al.
• Al having a purity of 4N Al: 99.99% by mass or more
• Al Al having a purity of 4N (Al: 99.99% by mass or more)
• Al Al: 99.999% by mass or more
• the remainder of the Al wiring material of the present invention may contain elements other than Al within the range not impairing the effects of the present invention.
• the Al content is not particularly limited as long as it does not inhibit the effects of the present invention, but is preferably 95% by mass or more, 96% by mass or more, or 97% by mass or more, more preferably is 98% by mass or more, 98.5% by mass or more, 98.6% by mass or more, 98.8% by mass or more, or 99% by mass or more.
• the balance of the Al wiring material of the present invention consists of Al and unavoidable impurities.
• the Al wiring material of the present invention may or may not have a coating mainly composed of an element other than Al on the outer circumference of the Al wiring material.
• the Al wiring material of the present invention does not have a coating mainly composed of a metal other than Al on the outer circumference of the Al wiring material.
• the term "coating containing a metal other than Al as a main component" refers to a coating containing 50% by mass or more of a metal other than Al.
• the Al wiring material of the present invention can provide joints with good high-temperature reliability. Therefore, the Al wiring material of the present invention can be used in a wide range of applications that require high-temperature reliability when connecting with members to be connected. (Al wiring material for industrial equipment), and can be suitably used for connection with connected members in various semiconductor devices including power semiconductor devices (Al wiring for semiconductor devices material).
• the Al wiring material of the present invention may have arbitrary dimensions according to its specific usage.
• the wire diameter is not particularly limited, and w may be, for example, 500 ⁇ m to 10 mm.
• a stranded wire using a plurality of such Al wires may be used.
• the dimension (w ⁇ t) of its rectangular or substantially rectangular cross section is not particularly limited, and for example, w may be 500 ⁇ m to 10 mm and t may be 50 ⁇ m to 2 mm.
• the Al wiring material of the present invention is an Al bonding wire used in various semiconductor devices including power semiconductor devices, the wire diameter is not particularly limited. good.
• the dimension (w ⁇ t) of its rectangular or substantially rectangular cross section is not particularly limited, for example, w may be 100 to 3000 ⁇ m and t may be 50 to 600 ⁇ m good.
• the method for manufacturing the Al wiring material of the present invention is not particularly limited, and for example, it may be manufactured using known processing methods such as extrusion, swaging, wire drawing, and rolling.
• processing methods such as extrusion, swaging, wire drawing, and rolling.
• wire drawing When the wire diameter becomes small to some extent, it is preferable to perform wire drawing using a diamond die.
• Cold working in which wire drawing is performed at room temperature, requires a relatively simple configuration, such as a manufacturing apparatus, and is excellent in workability.
• hot working in which wire is drawn by heating may be used.
• Al and pure metals of each additive element are weighed as starting materials so that the content of each additive element is within a specific range, and then mixed and melted to solidify to produce an ingot.
• a master alloy containing the additive element at a high concentration may be used as a raw material for each additive element.
• Batch type and continuous casting type can be used in the melting process for making this ingot.
• the continuous casting type has excellent productivity, but the batch type can easily change the cooling temperature conditions for solidification. This ingot is processed to the final size to form an Al wiring material.
• the intermediate heat treatment may be performed by heating at a temperature range of 200 to 500° C. for 0.2 minutes to 1 hour, for example. Specific examples include conditions such as 250° C. for 30 minutes and 350° C. for 1 minute.
• heating may be performed in the temperature range of 300 to 600° C. for 0.5 to 3 seconds.
• a wiring material subjected to isothermal heat treatment under several time conditions may be manufactured as a trial, and the average crystal grain size in the C cross section may be measured to easily obtain the desired characteristics.
• refining heat treatment is performed at the final wire diameter and the wire diameter in the vicinity thereof in order to reduce the amount of strain introduced into the material by wire drawing. It is effective to perform at high temperature or for a long time.
• Conditions for the refining heat treatment include, for example, heating at a relatively high temperature range of 450 to 620° C. for 0.1 second to 5 minutes. Specifically, conditions such as heating at 580° C. for 0.2 seconds or heating at 450° C. for 5 seconds can be mentioned.
• the temperature conditions for the thermal refining heat treatment for example, the tensile strength of the refined Al wiring material is confirmed by changing only the furnace temperature at a constant wire feeding speed, and the heat treatment temperature is determined so as to obtain the desired tensile strength. do it. By adjusting the conditions of the refining heat treatment in combination with the intermediate heat treatment, it becomes easier to control the tensile strength.
• the deformation texture formed by wire drawing and the recovery of dislocations in the intermediate heat treatment it is effective to moderately control the growth of recrystallized grains.
• the wire diameter is in the range of 500 ⁇ m to 3000 ⁇ m
• the average value of the area reduction of the wire drawing die is in the range of 5 to 15%.
• It is effective to heat in the temperature range of ⁇ 600°C for 0.5 seconds to 3 seconds.
• It is also effective to perform the refining heat treatment at or near the final wire diameter by heating at a temperature range of 400 to 600° C. for 0.1 seconds to 3 minutes. Refining heat treatment conditions such as heating for seconds, or heating at 400° C. for 5 seconds can be mentioned.
• a semiconductor device can be manufactured by connecting electrodes on a semiconductor chip to external electrodes on a lead frame or a substrate using the Al wiring material of the present invention.
• the semiconductor device of the present invention includes a circuit board, a semiconductor chip, and an Al wiring material for electrically connecting the circuit board and the semiconductor chip, and the Al wiring material is the Al wiring material of the present invention. characterized by
• the circuit board and semiconductor chip are not particularly limited, and known circuit boards and semiconductor chips that can be used to configure the semiconductor device may be used.
• a lead frame may be used instead of the circuit board.
• the configuration of the semiconductor device may include a lead frame and a semiconductor chip mounted on the lead frame.
• Semiconductor devices are used in electrical products (e.g., computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.) and vehicles (e.g., motorcycles, automobiles, trains, ships, aircraft, etc.).
• electrical products e.g., computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.
• vehicles e.g., motorcycles, automobiles, trains, ships, aircraft, etc.
• Various semiconductor devices are mentioned, and among them, a power semiconductor device (power semiconductor device) is preferable.
• Intermediate heat treatment was performed in a wire diameter range of 1 mm to 2 mm under heating conditions of 1 second to 3 seconds in a temperature range of 400 to 600°C. After that, die wire drawing was performed with final wire diameters of 100, 300, and 500 ⁇ m. After wire drawing was completed, a refining heat treatment was performed at a temperature of 450 to 600° C. for 0.2 to 3 seconds to obtain an Al wiring material.
• the content of the additive element in the Al wiring material is measured by ICP-OES (“PS3520UVDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS (“Agilent 7700x ICP-MS” manufactured by Agilent Technologies, Inc.) as an analyzer. ) was used.
• the orientation ratio of the ⁇ 111> crystal orientation was measured using the C section of the Al wiring material as a measurement plane.
• the EBSD method was used for the measurement, and the orientation ratio of the ⁇ 111> crystal orientation was calculated by the above-described procedure using analysis software attached to the apparatus.
• Five measurement planes (C cross section) are selected at intervals of 1 m or more in the longitudinal direction of the Al wiring material, and the obtained orientation ratio values are arithmetically averaged to determine the ⁇ 111> crystal orientation in the C cross section. azimuth ratio.
• the tensile strength of the Al wiring material was determined by performing a tensile test on the Al wiring material and measuring the maximum stress in the tensile test as the tensile strength.
• the tensile strength was measured using an Instron tensile tester under conditions of a gauge length of 100 mm, a tensile speed of 10 mm/min, and a load cell rated load of 1 kN. The measurement was performed 5 times, and the obtained tensile strength values were arithmetically averaged to obtain the tensile strength of the Al wiring material.
• the electrodes of the semiconductor chip were Al--Cu pads (thickness 2 ⁇ m), and the external terminals were Ni-coated Cu lead frames. Both the first connecting portion between the electrode of the semiconductor chip and the Al wiring material and the second connecting portion between the external terminal and the Al wiring material were wedge-bonded.
• aging heat treatment was performed at 300° C. for 30 minutes after connection.
• EBR Effective bonding area ratio
• EBR effective joint area ratio
• the high-temperature reliability of the junction was evaluated by performing a power cycle test on Al wiring materials with wire diameters of 300 ⁇ m and 100 ⁇ m.
• heating and cooling were alternately repeated for the semiconductor device to which the Al wiring material was connected. Heating was performed for 2 seconds until the maximum temperature reached about 140°C, and then cooling was performed for 25 seconds until the temperature of the joint reached 30°C.
• the Al wiring material having a wire diameter of 300 ⁇ m evaluation was made for both the case where the heating/cooling cycle was repeated 50,000 times and the case where the cycle was repeated 100,000 times.
• evaluation was made on the case where the heating/cooling cycle was repeated 50,000 times and the case where the heating/cooling cycle was repeated 100,000 times.
• the shear strength of the joint was measured for the first connection, and the high-temperature reliability of the joint was evaluated. It was evaluated by S2/S1, which is the ratio of the shear strength S2 after the power cycle test to the shear strength S1 of the joint portion in the initial bonding. Regarding the value of S2/S1, if it is 0.9 or more, it is indicated as " ⁇ " because it is excellent reliability. If it is less than 0.8, there is no problem in practical use, so it is indicated as " ⁇ ”. If it is less than that, the high-temperature reliability is inferior, so it is indicated as "x" in the "high-temperature reliability” column of Table 1.
• Table 1 shows the evaluation results of Examples and Comparative Examples.
• Example no. All of the Al wiring materials Nos. 1 to 30 have the Pd and Pt contents and the average crystal grain size in the C cross section within the range of the present invention, the EBR (300 ⁇ m) evaluation is ⁇ or ⁇ , and high temperature reliability also showed good results.
• Comparative example no. 1 to 5 the contents of Pd and Pt are out of the range of the present invention, and Comparative Example No. Samples Nos. 6 and 7 had an average crystal grain size outside the range of the present invention, so the EBR evaluation was x, and the high-temperature reliability was also poor.

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• 2022
  • 2022-01-31 US US18/275,599 patent/US20240110262A1/en active Pending
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