WO2022168735A1 - Silicon compound containing hexafluoroisopropanol group, method for producing silicon compound, polysiloxane, and method for producing polysiloxane - Google Patents
Silicon compound containing hexafluoroisopropanol group, method for producing silicon compound, polysiloxane, and method for producing polysiloxane Download PDFInfo
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- WO2022168735A1 WO2022168735A1 PCT/JP2022/003177 JP2022003177W WO2022168735A1 WO 2022168735 A1 WO2022168735 A1 WO 2022168735A1 JP 2022003177 W JP2022003177 W JP 2022003177W WO 2022168735 A1 WO2022168735 A1 WO 2022168735A1
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- -1 polysiloxane Polymers 0.000 title claims abstract description 114
- 150000003377 silicon compounds Chemical class 0.000 title claims abstract description 82
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical group FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 title description 4
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 9
- 238000004821 distillation Methods 0.000 claims description 63
- 125000004432 carbon atom Chemical group C* 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 23
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 21
- 238000009835 boiling Methods 0.000 claims description 14
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 abstract description 29
- 238000005259 measurement Methods 0.000 description 23
- 229910052736 halogen Inorganic materials 0.000 description 21
- 150000002367 halogens Chemical class 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 229920000642 polymer Polymers 0.000 description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 18
- 239000003960 organic solvent Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 239000005046 Chlorosilane Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007810 chemical reaction solvent Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 150000002366 halogen compounds Chemical class 0.000 description 5
- 238000004255 ion exchange chromatography Methods 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021607 Silver chloride Inorganic materials 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 4
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 238000001944 continuous distillation Methods 0.000 description 3
- 238000004848 nephelometry Methods 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 238000006068 polycondensation reaction Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 238000001577 simple distillation Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- HNSDLXPSAYFUHK-UHFFFAOYSA-N 1,4-bis(2-ethylhexyl) sulfosuccinate Chemical compound CCCCC(CC)COC(=O)CC(S(O)(=O)=O)C(=O)OCC(CC)CCCC HNSDLXPSAYFUHK-UHFFFAOYSA-N 0.000 description 2
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 2
- 125000004777 2-fluoroethyl group Chemical group [H]C([H])(F)C([H])([H])* 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000011403 purification operation Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000998 batch distillation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011268 retreatment Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
- 239000003799 water insoluble solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/20—Purification, separation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
Definitions
- One embodiment of the present invention relates to a silicon compound containing a hexafluoroisopropanol group and a method for producing the same.
- one embodiment of the present invention relates to a polysiloxane obtained by polymerizing the silicon compound and a method for producing the same.
- Polysiloxane polymer compounds or simply polysiloxane are used in the field of semiconductors as coating materials and sealing materials, taking advantage of their high heat resistance and transparency. in use. It is also used as a resist layer material due to its high resistance to oxygen plasma.
- a polysiloxane polymer compound In order to use a polysiloxane polymer compound as a resist, it must be soluble in an alkali such as an alkaline developer.
- an acidic group may be introduced into the polysiloxane polymer compound.
- acidic groups include phenol groups, carboxyl groups, fluorocarbinol groups, and the like.
- polysiloxane polymer compounds containing a phenol group or a carboxyl group may cause deterioration in transparency, coloration, etc., or poor heat resistance when used at high temperatures.
- a fluorocarbinol group which is an acidic group, such as a hexafluoroisopropanol group ⁇ 2-hydroxy-1,1,1,3,3,3-fluoroisopropyl group [-C(CF 3 ) 2 OH], hereinafter sometimes referred to as an HFIP group ⁇ , are disclosed in Patent Documents 1 and 2.
- Patent Document 1 discloses a method for producing an organosilicon compound (R 3 Si—CH 2 —CH 2 —CH 2 —C(CF 3 ) 2 OH) having an HFIP group (R has 1 to 3 carbon atoms). alkoxy group).
- the organosilicon compound is obtained by hydrosilylating a compound having an HFIP group represented by CH 2 ⁇ CH—CH 2 —C(CF 3 ) 2 OH and a trialkoxysilane containing an alkoxy group having 1 to 3 carbon atoms. can get.
- a fluorocarbinol group is bonded to a main chain consisting only of siloxane via a linear, branched, cyclic or bridged cyclic divalent hydrocarbon group having 1 to 20 carbon atoms.
- Polymeric compounds are disclosed.
- the organosilicon compound described in Patent Document 1 contains an ethylene bond ( --CH.sub.2--CH.sub.2--) between the HFIP group and the silicon atom, and the polymer compound described in Patent Document 2 contains the HFIP group and the siloxane main chain.
- An aliphatic hydrocarbon group is interposed between the silicon atoms of .
- Patent Documents 3 and 4 disclose a method for producing an HFIP group-containing silicon compound (1) in which an HFIP group and a silicon atom are directly bonded, and an HFIP group-containing polysiloxane polymer obtained by polymerizing (1).
- the compound is disclosed, and it is shown that the polysiloxane polymer compound exhibits higher heat resistance than the polymer compound described in Patent Document 1. It is also disclosed that the HFIP group-containing polysiloxane polymer compound has both transparency and alkali solubility.
- the HFIP group-containing impurities containing halogen other than fluorine is used.
- Silicon-containing compound (1) may be obtained.
- the present inventors have found that a specific halogenated silane compound is contained as one of the halogen-containing impurities in the method for producing the HFIP group-containing silicon compound (1) described in Patent Documents 3 and 4, It has been found that there is room for improvement in reducing the content of halogen-containing impurities by reducing the content of the halogenated silane compound.
- a silicon compound containing an HFIP group in which the content of a specific halogenated silane compound is reduced hereinafter also referred to as an HFIP group-containing aromatic alkoxysilane
- a method for producing the same a silicon compound containing an HFIP group
- An object of the present invention is to provide a polysiloxane obtained by polymerizing a compound and a method for producing the same.
- the present inventors diligently studied a new method for removing halogen-containing impurities remaining in the HFIP group-containing alkoxysilane. As a result, it was found that halogen-containing impurities remaining in the HFIP group-containing alkoxysilane can be removed by performing distillation again after removing high-boiling components by distillation.
- One embodiment of the present invention includes a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2), wherein the halogenated silane compound represented by the formula (2) content is more than 0 ppm by mass and 1000 ppm by mass or less.
- R 1 is each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms
- R 2 is each independently , a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
- n is an integer of 1 to 5
- a is an integer of 1 to 3
- b is an integer of 0 to 2
- c is 1 or more It is an integer of 3 or less
- R 2a is each independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
- X is a chlorine atom, a bromine atom or an iodine atom
- n is an integer of
- the upper limit of the content of the halogenated silane compound may be 100 ppm by mass or less.
- aa may be 1.
- dd may be 1.
- R 2a may be a methyl group or an ethyl group.
- the halogenated silane compound is represented by formula (2) in which aa is 1, bb is 0, dd is 1 or 2, cc is 1 or 2, and R 2a is a methyl group or an ethyl group. It may be a compound that is
- the content of the silicon compound (meta form) represented by the formula (1) composed of the group represented by the formula (2A) is Xa mol
- Ya mol is the content of the silicon compound (para-body) represented by the formula (1) composed of the group represented by the formula (2B)
- Ya/(Ya+Xa) ⁇ 0.10 may satisfy the relationship of
- the halide ion concentration may be 100 ppm by mass or less.
- One embodiment of the present invention distills a mixture containing at least a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2), and a first distillation step of recovering a first mixture containing a lower boiling point component than the silicon compound represented by the formula (1); Distilling the first mixture containing the silicon compound represented by the formula (1) and a component with a boiling point lower than that of the silicon compound represented by the formula (1) obtained in the first step, ) and a second distillation step to recover the silicon compound represented by Provided is a method for producing a silicon compound, characterized in that the content of the halogenated silane compound represented by formula (2) is 1000 ppm by mass or less.
- each R 1 is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms
- each R 2 is independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
- n is an integer of 1 to 5
- a is an integer of 1 to 3
- b is an integer of 0 to 2
- c is 1 It is an integer greater than or equal to 3 and less than or equal to 3
- a + b + c 4.
- each R 1a is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms
- R 2a is each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
- X is a chlorine atom, a bromine atom or an iod
- One embodiment of the present invention provides a polysiloxane obtained by polymerizing any of the above silicon compounds.
- the halide ion concentration may be 1000 ppm by mass or less.
- An embodiment of the present invention provides a method for producing polysiloxane by polymerizing any of the above silicon compounds.
- a silicon compound containing a HFIP group (HFIP group-containing aromatic alkoxysilane) having a reduced content of a specific halogenated silane compound, a method for producing the same, and a silicon compound containing an HFIP group are polymerized. and a method for producing the same can be provided.
- a silicon compound (HFIP group-containing aromatic alkoxysilane), a method for producing the same, polysiloxane, and a method for producing the same according to an embodiment of the present invention will be described below.
- the embodiments of the present invention should not be construed as being limited to the descriptions of the embodiments and examples shown below.
- the notation "X to Y" in the explanation of the numerical range means X or more and Y or less, unless otherwise specified.
- alkyl group includes not only alkyl groups without substituents (unsubstituted alkyl groups) but also alkyl groups with substituents (substituted alkyl groups).
- cyclic alkyl group includes not only monocyclic structures but also polycyclic structures. The same applies to a “cycloalkyl group”.
- HFIP group a hexafluoroisopropanol group represented by —C(CF 3 ) 2 OH is sometimes referred to as “HFIP group”.
- a silicon compound according to one embodiment of the present invention includes an HFIP group-containing aromatic alkoxysilane and a halogenated silane compound, which will be described below.
- HFIP group-containing aromatic alkoxysilane (silicon compound) used in the present invention is represented by the following general formula (1) and has a structure in which the HFIP group and silicon atoms are directly bonded to an aromatic ring.
- each R 1 is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms.
- Each R 2 is independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and n is an integer of 1-5.
- a is an integer of 1 or more and 3 or less
- b is an integer of 0 or more and 2 or less
- c is an integer of 1 or more and 3 or less
- a+b+c 4.
- n is preferably 1 or 2, and particularly preferably at least one group selected from the group consisting of groups represented by the following formulas (2A) to (2D). Moreover, as for a, 1 is preferable.
- line segments intersecting with the wavy lines represent bonds.
- R 1 is preferably an alkyl group having 1 to 5 carbon atoms, particularly preferably a methyl group.
- R 2 is preferably a linear alkyl group having 1 to 4 carbon atoms or a branched alkyl group having 3 to 4 carbon atoms, and all or part of the hydrogen atoms in the alkyl group are substituted with fluorine atoms.
- R 2 includes methyl group, ethyl group, 1-propyl group, 2-propyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, 2-fluoroethyl group, 2,2,2-trifluoroethyl group, 3-fluoropropyl group, 3,3-difluoropropyl group, 3,3,3-trifluoropropyl group, 2,2,3,3-tetrafluoropropyl group, 2 , 2,3,3,3-pentafluoropropyl group, 1,1,1,3,3,3-hexafluoroisopropyl group and the like can be used, and methyl group or ethyl group is particularly preferable.
- the halogenated silane compound contained in the silicon compound according to the present invention is represented by the following formula (2).
- the halogenated silane compound represented by the following formula (2) is preferably not included in the silicon compound according to the present invention.
- Halogens and/or halogen compounds may be contained as raw materials or by-reactants, so it is difficult to reduce the content of halogenated silane compounds in the silicon compound according to the present invention to 0 mass ppm.
- the silicon compound according to the present invention is characterized in that the content of the halogenated silane compound represented by the following formula (2) is lower than ever before.
- R 1a is each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms
- R 2a is each independently and , a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
- X is a chlorine atom, a bromine atom or an iodine atom
- n is an integer of 1 to 5
- aa is an integer of 1 or more and 3 or less
- bb is an integer of 0 or more and 2 or less
- cc is an integer of 0 or more and 2 or less.
- n may be 1 or 2, particularly one or more selected from the group consisting of groups represented by the following formulas (2A) to (2D) good too.
- aa may be 1.
- line segments intersecting with the wavy lines represent bonds.
- dd may be 1.
- R 1a may be an alkyl group having 1 to 5 carbon atoms, especially a methyl group.
- R 2a may be a linear alkyl group having 1 to 4 carbon atoms or a branched alkyl group having 3 to 4 carbon atoms, and all or part of the hydrogen atoms in the alkyl group are fluorine atoms. may be replaced with Specifically, R 2a includes a methyl group, ethyl group, 1-propyl group, 2-propyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, 2-fluoroethyl group, 2,2,2-trifluoroethyl group, 3-fluoropropyl group, 3,3-difluoropropyl group, 3,3,3-trifluoropropyl group, 2,2,3,3-tetrafluoropropyl group, 2 , 2,3,3,3-pentafluoropropyl group, 1,1,1,3,3,3-hexafluoroisopropyl group, and the like, and particularly methyl group or e
- the silicon compound according to the present invention mainly contains an HFIP group-containing aromatic alkoxysilane represented by formula (1), and in one embodiment, the content of the halogenated silane compound represented by formula (2) is 0 mass. ppm and not more than 1000 mass ppm. Preferably, the upper limit of the content of the halogenated silane compound represented by formula (2) is 100 mass ppm or less. In the silicon compound according to the present invention, the content of the halogenated silane compound represented by formula (2) is preferably as small as possible, and may be 0 ppm by mass.
- Halogens and/or halogen compounds may be included as raw materials or by-reactants in the process, so it is difficult to reduce the content of the halogenated silane compound in the silicon compound according to the present invention to 0 mass ppm.
- the detection limit may be the lower limit.
- the lower limit may be 10 mass ppm.
- the content of the halogenated silane compound represented by formula (2) shall be measured using gas chromatography.
- the silicon compound according to the present invention preferably has a halide ion concentration of 100 ppm by mass or less.
- the halide ions to be measured are evaluated as halide ions including the halogen contained in the halogenated silane compound represented by formula (2).
- the halide ions to be measured are chloride, bromide or iodide ions.
- the halide ion concentration may be 0 mass ppm, but as described above, it is difficult to make the halide ion concentration 0 due to the production process using a halogen compound, From a technical point of view for detecting halide ion concentration, the detection limit may be the lower limit.
- the lower limit may be 0.1 mass ppm.
- the halide ion concentration can be determined by an optimum measuring method depending on the sample to be measured. A measurement sample in which the silicon compound of the present invention is solid and a measurement sample containing the silicon compound of the present invention and a water-insoluble organic solvent are measured using ion chromatography.
- a measurement sample containing the silicon compound or polysiloxane of the present invention and a water-soluble organic solvent is measured using a silver chloride nephelometry.
- the halide ion concentration of the silicon compound of the present invention can be calculated from the halide ion concentration of a measurement sample containing an organic solvent.
- the halide ion concentration (ppm) obtained by subtracting the halide ion concentration (ppm) of the organic solvent from the halide ion concentration (ppm) of the measurement sample containing the organic solvent, and the weight (g) of the measurement sample containing the organic solvent , the halide ion amount (g) of the measurement sample excluding the halide ions derived from the organic solvent (hereinafter referred to as halide ion amount (1)) can be obtained.
- the mass (g) of the silicon compound in the measurement sample containing the organic solvent can be obtained from the concentration (% by mass) of the measurement sample containing the organic solvent and the weight (g) of the measurement sample containing the organic solvent.
- the amount of halide ions (1) obtained above is considered to be derived from the silicon compound. Concentration (ppm) can be calculated.
- the content of the silicon compound (meta-body) represented by formula (1) composed of the group represented by formula (2A) is Xa mol, composed of the group represented by formula (2B)
- the content of the silicon compound (para-body) represented by the formula (1) is Ya mol, Ya/(Ya+Xa) ⁇ 0.10 may satisfy the relationship of
- the silicon compound according to the embodiment of the present invention is solid at room temperature (eg, 20°C), and by satisfying the above relationship, the fluidity of the solid can be improved.
- room temperature eg, 20°C
- the fluidity tends to be improved which is preferable from the viewpoint of handling of solids.
- the meta isomer and the para isomer have different polymerization reactivity, and by satisfying the above relationship, it is possible to suppress variations in polymerization reactivity.
- the smaller the value of the above relational expression the more likely it is that variation in polymerization reactivity will be suppressed, which is preferable from the viewpoint of polymer quality and production stability.
- Method for producing silicon compound is not particularly limited, and the method for producing the HFIP group-containing aromatic alkoxysilane (1) can be used. A typical manufacturing method is described below.
- the compound represented by general formula (1) is known, and can be synthesized by referring to the methods described in Patent Document 3 and Patent Document 4, for example.
- the synthesized HFIP group-containing aromatic alkoxysilane (1) contains halogens and/or halogen compounds produced by raw materials and side reactions. That is, since the silicon compound in the state before purification contains the above halogens and/or halogen compounds, the halogenated silane compound represented by the formula (2) is likely to be produced when a conventional purification operation is performed. . Therefore, in one embodiment of the method for producing a silicon compound according to the present invention, the following purification method is used.
- the HFIP group-containing aromatic alkoxysilane represented by formula (1) is subjected to a distillation step, and the HFIP group-containing aromatic alkoxysilane and the A first step of recovering a mixture containing a boiling point component, and a mixture containing the HFIP group-containing aromatic alkoxysilane obtained in the following first step and a component with a boiling point lower than that of the HFIP group-containing aromatic alkoxysilane. is subjected to a distillation step again to perform a second step of recovering the HFIP group-containing aromatic alkoxysilane, thereby reducing halogen-containing impurities.
- the operation will be described in detail below.
- Pre-distillation (first distillation step)
- the HFIP group-containing aromatic alkoxysilane is subjected to distillation (pre-distillation) as the first distillation step for the purpose of removing high-boiling components.
- distillation pre-distillation
- the halogenated silane compound represented by formula (2) is produced as a by-product.
- a mixture containing the HFIP group-containing aromatic alkoxysilane and a component with a boiling point lower than that of the HFIP group-containing aromatic alkoxysilane is recovered, and high boiling halogen-containing impurities that cause thermal decomposition are removed. It can be removed as boiler residue.
- the distillation fraction obtained by this operation is subjected to distillation purification again to separate the halogenated silane compound from the HFIP group-containing aromatic alkoxysilane, thereby reducing halogen-containing impurities.
- pre-distillation there are no particular restrictions on the method of pre-distillation, and in addition to simple distillation, multi-stage distillation that repeats this, batch-type distillation equipped with a rectifying column, continuous distillation, and thin-film distillation for high-boiling compounds. is used.
- the optimum distillation temperature for distillation varies greatly depending on the type of the HFIP group-containing aromatic alkoxysilane (1) to be purified, but it is preferably in the range of 100°C to 200°C. If the temperature is too high, the yield may decrease due to thermal decomposition. More preferably, the pre-distillation is carried out in the range of 100°C to 180°C.
- the pressure during pre-distillation is not particularly limited, but it is preferably adjusted according to the boiling point of the HFIP group-containing aromatic alkoxysilane. Specifically, pre-distillation is performed at 0.01 to 101 kPa (atmospheric pressure). preferable.
- the halogen-containing impurities are reduced by re-distilling the obtained distillation fraction after the pre-distillation.
- the main halogen-containing impurity contained in the distillation fraction of the pre-distillation is the halogenated silane compound (2) produced as a by-product during the pre-distillation. Therefore, the halogenated silane compound (2) may be removed before the main distillation. Examples of such a removal step include retreatment with alcohol corresponding to OR 2 in formula (1) (so-called HOR 2 ) and washing with water.
- the optimum distillation temperature in the main distillation varies greatly depending on the type of the HFIP group-containing aromatic alkoxysilane (1) to be purified, which is used in the same manner as in the pre-distillation. C. to 180.degree. C. is more preferable.
- the pressure during the main distillation is not particularly limited as in the pre-distillation, but it is preferably adjusted according to the boiling point of the HFIP group-containing aromatic alkoxysilane, specifically 0.01 to 101 kPa (atmospheric pressure). Preference is given to carrying out the main distillation.
- the polysiloxane according to this embodiment is a polysiloxane obtained by polymerizing the silicon compound of the present invention, and has at least one or more siloxane bonds.
- Methods for producing polysiloxane are known, and can be synthesized with reference to the methods described in Patent Documents 3 and 4, for example.
- HFIP group-containing polysiloxane polymer compound of the present invention is obtained by adding to the inside and then stirring the reaction solution at room temperature or while heating to allow hydrolysis and polycondensation reactions to proceed.
- the reaction solvent may be any solvent that dissolves the raw material compound, and the solvent may be a water-soluble or water-insoluble organic solvent, such as an alcohol solvent or an ether solvent.
- the water-soluble organic solvent in the present invention is an organic solvent having a solubility in water of more than 50 g/L, and the water-insoluble organic solvent has a solubility in water of 50 g/L or less.
- An organic solvent examples include lower alcohols, lower ethers, lower ketones, and lower esters.
- methanol (solubility in water: optionally mixed), ethanol (solubility in water: arbitrarily mixed), 1-propanol (water solubility: arbitrarily mixed), isopropanol (water solubility: 1000 g/L), 1-butanol (water solubility: 77 g/L), diethyl ether (solubility in water: 60 g / L), acetonitrile (solubility in water: 1000 g / L), tetrahydrofuran (solubility in water: arbitrarily mixed), N,N-dimethylformamide (solubility in water : arbitrarily mixed), and N-methyl-2-pyrrolidone (solubility in water: arbitrarily mixed).
- water-insoluble solvents examples include hydrocarbons, higher ethers, and higher ketones. Specifically, toluene (solubility in water: 0.526 g/L), diisopropyl ether (solubility in water: 11 g/L), L), and methyl-t-butyl ether (solubility in water: 42 g/L).
- the content of the halogenated silane represented by the formula (2) contained in the HFIP group-containing aromatic alkoxysilane represented by the formula (1) is reduced, it is possible to polymerize them. , a polysiloxane with a low halogen content can be obtained.
- the halide ion concentration in the polysiloxane is 1000 mass ppm or less.
- chloride ion measurement In this example, chloride ion was measured as the halogen.
- Silver chloride nephelometry A sample containing the silicon compound or polysiloxane of the present invention and a water-soluble organic solvent was measured by a silver chloride nephelometry using silver nitrate.
- the silver chloride turbidimetric method can be performed according to JISB8224:2016. Nitric acid with a mass fraction of 60% specified in JIS K 8541 was used, and silver nitrate aqueous solution was 1.2 mol/L. Measurement was performed at a measurement wavelength of 335 nm.
- the molecular weight of the polymer was measured by GPC using a gel permeation chromatograph (manufactured by Tosoh Corporation, HLC-8320GPC), and the weight average molecular weight (Mw) was calculated by polystyrene conversion.
- Example 1 200 g of the mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene obtained in Synthesis Example 1 was distilled at a temperature of 125 to 135°C under reduced pressure.
- the obtained fraction is subjected to precision distillation at a distillation temperature of 143 to 146 ° C. and a reduced pressure of 0.2 kPa using a distillation apparatus with 15 distillation stages to obtain 3-(2-hydroxy-1,1,1, 3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 99.4%), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl) 144 g (yield 72%) of -triethoxysilylbenzene (para-isomer: GC purity 0.5%) was obtained as a solid.
- Example 1 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta compound ) has almost the same GC purity and yield (Example 1 has a GC purity of 99.4% and a yield of 72%, Comparative Example 1 has a GC purity of 99.2% and a yield of 73%), but the formula (2 ) and chloride ion concentrations in Example 1 were clearly lower than those in Comparative Example 1.
- Example 1 and Comparative Example 1 both use the raw material obtained in Synthesis Example 1, Example 1, which is within the scope of the present invention, is more effective as a method for reducing chlorine-containing impurities. It became clear.
- Example 2 For 200 g of the mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene obtained in Synthesis Example 2, a distillation temperature of 97 to 107 °C, the degree of pressure reduction of 0.5 kPa, and the obtained fraction is again subjected to precision distillation at a distillation temperature of 103 to 106 ° C. and a degree of pressure reduction of 0.5 kPa using a distillation apparatus with 15 distillation stages.
- a reaction solvent can also be used for the purpose of advancing the polycondensation reaction as described above.
- 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene metala form: GC purity 99.4%
- 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene para-body: GC purity 0.5%) mixture
- chloride ion concentration 2 .5 ppm
- chloride ion concentration was 1.7 ppm
Abstract
Description
(式(1)中、R1は、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2はそれぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、nは1~5の整数であり、aは1以上3以下の整数、bは0以上2以下の整数、cは1以上3以下の整数であり、a+b+c=4である。)
(式(2)中、R1aは、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2aは、それぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、Xは塩素原子、臭素原子又はヨウ素原子であり、nは1~5の整数であり、aaは1以上3以下の整数、bbは0以上2以下の整数、ccは0以上2以下の整数、ddは1以上3以下の整数であり、aa+bb+cc+dd=4である。) One embodiment of the present invention includes a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2), wherein the halogenated silane compound represented by the formula (2) content is more than 0 ppm by mass and 1000 ppm by mass or less.
(In formula (1), R 1 is each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and R 2 is each independently , a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is 1 or more It is an integer of 3 or less, and a+b+c=4.)
(In formula (2), R 1a is each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and R 2a is each independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, and aa is an integer of 1 to 3 , bb is an integer of 0 or more and 2 or less, cc is an integer of 0 or more and 2 or less, dd is an integer of 1 or more and 3 or less, and aa+bb+cc+dd=4.)
(波線と交差する線分は結合手を表す。)
で表される基が、
下記式(2A)~(2D)で表される基からなる群から選択される1種以上であってもよい。
(それぞれ、波線と交差する線分は結合手を表す。) in formula (1) and formula (2)
(A line segment that intersects with a wavy line represents a bond.)
The group represented by
It may be one or more selected from the group consisting of groups represented by the following formulas (2A) to (2D).
(The line segments intersecting the wavy lines represent bonds, respectively.)
式(2B)で表される基で構成される式(1)で表されるケイ素化合物(パラ体)の含有量をYaモルとしたときに、
Ya/(Ya+Xa)<0.10
の関係を満たしてもよい。 The content of the silicon compound (meta form) represented by the formula (1) composed of the group represented by the formula (2A) is Xa mol,
When Ya mol is the content of the silicon compound (para-body) represented by the formula (1) composed of the group represented by the formula (2B),
Ya/(Ya+Xa)<0.10
may satisfy the relationship of
第1の工程で得られた、式(1)で表されるケイ素化合物と、式(1)で表されるケイ素化合物よりも低沸点成分を含む第1の混合物を蒸留して、式(1)で表されるケイ素化合物を回収する第2の蒸留工程と、を含み、
式(2)で表されるハロゲン化シラン化合物の含有量が1000質量ppm以下である、ことを特徴とする、ケイ素化合物の製造方法を提供する。
(前記式(1)中、R1は、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2はそれぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、nは1~5の整数であり、aは1以上3以下の整数、bは0以上2以下の整数、cは1以上3以下の整数であり、a+b+c=4である。)
(前記式(2)中、R1aは、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2aは、それぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、Xは塩素原子、臭素原子又はヨウ素原子であり、nは1~5の整数であり、aaは1以上3以下の整数、bbは0以上2以下の整数、ccは0以上2以下の整数、ddは1以上3以下の整数であり、aa+bb+cc+dd=4である。) One embodiment of the present invention distills a mixture containing at least a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2), and a first distillation step of recovering a first mixture containing a lower boiling point component than the silicon compound represented by the formula (1);
Distilling the first mixture containing the silicon compound represented by the formula (1) and a component with a boiling point lower than that of the silicon compound represented by the formula (1) obtained in the first step, ) and a second distillation step to recover the silicon compound represented by
Provided is a method for producing a silicon compound, characterized in that the content of the halogenated silane compound represented by formula (2) is 1000 ppm by mass or less.
(In the above formula (1), each R 1 is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and each R 2 is independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is 1 It is an integer greater than or equal to 3 and less than or equal to 3, and a + b + c = 4.)
(In the above formula (2), each R 1a is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and R 2a is each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is 1 to 3 an integer, bb is an integer of 0 or more and 2 or less, cc is an integer of 0 or more and 2 or less, dd is an integer of 1 or more and 3 or less, and aa+bb+cc+dd=4.)
本発明に使用されるHFIP基含有芳香族アルコキシシラン(ケイ素化合物)は下記一般式(1)で表され、HFIP基及びケイ素原子が芳香環に直接結合した構造を有する。
The HFIP group-containing aromatic alkoxysilane (silicon compound) used in the present invention is represented by the following general formula (1) and has a structure in which the HFIP group and silicon atoms are directly bonded to an aromatic ring.
で表される基について、nは1又は2が好ましく、特に次の式(2A)~式(2D)で表される基からなる群から選択される1種以上である基が好ましい。また、aは、1が好ましい。なお、上記式及び式(2A)~式(2D)において、波線と交差する線分は結合手を表す。
In the group represented by, n is preferably 1 or 2, and particularly preferably at least one group selected from the group consisting of groups represented by the following formulas (2A) to (2D). Moreover, as for a, 1 is preferable. In the above formulas and formulas (2A) to (2D), line segments intersecting with the wavy lines represent bonds.
本発明に係るケイ素化合物に含まれるハロゲン化シラン化合物は、下記式(2)で表される。後述するように、下記式(2)で表されるハロゲン化シラン化合物は、本発明に係るケイ素化合物に含まれないことが好ましいが、HFIP基含有芳香族アルコキシシラン(1)の製造工程上、原料として、あるいは副反応物として、ハロゲン及び/又はハロゲン化合物が含まれうるため、本発明に係るケイ素化合物中のハロゲン化シラン化合物の含有量を0質量ppmにするのは難しい。本発明に係るケイ素化合物においては、下記式(2)で表されるハロゲン化シラン化合物の含有量が従来になく低減されたことを特徴とする。
The halogenated silane compound contained in the silicon compound according to the present invention is represented by the following formula (2). As will be described later, the halogenated silane compound represented by the following formula (2) is preferably not included in the silicon compound according to the present invention. Halogens and/or halogen compounds may be contained as raw materials or by-reactants, so it is difficult to reduce the content of halogenated silane compounds in the silicon compound according to the present invention to 0 mass ppm. The silicon compound according to the present invention is characterized in that the content of the halogenated silane compound represented by the following formula (2) is lower than ever before.
で表される基について、nが1又は2のものであってもよく、特に次の式(2A)~式(2D)で表される基からなる群から選択される1種以上であってもよい。また、aaは、1であってもよい。なお、上記式及び式(2A)~式(2D)において、波線と交差する線分は結合手を表す。
For the group represented by n may be 1 or 2, particularly one or more selected from the group consisting of groups represented by the following formulas (2A) to (2D) good too. Also, aa may be 1. In the above formulas and formulas (2A) to (2D), line segments intersecting with the wavy lines represent bonds.
Ya/(Ya+Xa)<0.10
の関係を満たしてもよい。 In one embodiment, the content of the silicon compound (meta-body) represented by formula (1) composed of the group represented by formula (2A) is Xa mol, composed of the group represented by formula (2B) When the content of the silicon compound (para-body) represented by the formula (1) is Ya mol,
Ya/(Ya+Xa)<0.10
may satisfy the relationship of
本発明に係るケイ素化合物の製造方法は、HFIP基含有芳香族アルコキシシラン(1)の製造方法を用いることができ、特には限定されない。典型的な製造方法を以下に説明する。 [Method for producing silicon compound]
The method for producing the silicon compound according to the present invention is not particularly limited, and the method for producing the HFIP group-containing aromatic alkoxysilane (1) can be used. A typical manufacturing method is described below.
合成したHFIP基含有芳香族アルコキシシラン(1)には、原料や副反応で生じたハロゲン及び/又はハロゲン化合物が含まれる。すなわち、精製前の状態のケイ素化合物には上記のようなハロゲン及び/又はハロゲン化合物が含まれるため、従来の精製操作を行うと、式(2)で表されるハロゲン化シラン化合物が生成し易い。このため、本発明に係るケイ素化合物の製造方法においては、一実施形態において、以下の精製方法を用いる。 [Purification method]
The synthesized HFIP group-containing aromatic alkoxysilane (1) contains halogens and/or halogen compounds produced by raw materials and side reactions. That is, since the silicon compound in the state before purification contains the above halogens and/or halogen compounds, the halogenated silane compound represented by the formula (2) is likely to be produced when a conventional purification operation is performed. . Therefore, in one embodiment of the method for producing a silicon compound according to the present invention, the following purification method is used.
本発明では、第1の蒸留工程としてHFIP基含有芳香族アルコキシシランに対して高沸点成分を除去する目的で蒸留(前蒸留)を行う。前蒸留を実施せずに直接精密蒸留(本蒸留)を実施した場合(従来の精製操作の場合)、式(2)で表されるハロゲン化シラン化合物が副生成物として生じる。これは、HFIP基含有芳香族アルコキシシラン中に残留する高沸点のハロゲン含有不純物が蒸留時の熱によって分解し、その際に発生したハロゲン化水素がアルコキシ基(Si―OR2)と交換反応を起こして生成したと推察される。上記の熱分解反応は分解速度が遅いものの、蒸留中継続して起こり続けるため、HFIP基含有芳香族アルコキシシランからハロゲン含有不純物であるハロゲン化シラン化合物を完全に分離することは困難である。 [Pre-distillation (first distillation step)]
In the present invention, the HFIP group-containing aromatic alkoxysilane is subjected to distillation (pre-distillation) as the first distillation step for the purpose of removing high-boiling components. When direct precision distillation (main distillation) is performed without pre-distillation (in the case of conventional purification operations), the halogenated silane compound represented by formula (2) is produced as a by-product. This is because the high-boiling halogen-containing impurities remaining in the HFIP group-containing aromatic alkoxysilane are decomposed by the heat during distillation, and the hydrogen halide generated at that time undergoes an exchange reaction with the alkoxy group (Si—OR 2 ). It is presumed that it was generated by waking up. Although the decomposition rate of the above thermal decomposition reaction is slow, it continues to occur during the distillation, making it difficult to completely separate the halogenated silane compound, which is a halogen-containing impurity, from the HFIP group-containing aromatic alkoxysilane.
続いて第2の蒸留工程として、HFIP基含有芳香族アルコキシシラン(1)の回収及びハロゲン化シラン化合物(2)を除去する目的で本蒸留を行う。本蒸留の方法については特別な制限はなく、単蒸留のほか、これを繰り返した多段の蒸留や精留塔を備えたバッチ式蒸留・連続式蒸留、又は高沸点化合物の場合は薄膜式蒸留等が用いられる。ただし、ハロゲン化シラン化合物(2)との分離の観点から、精留塔を備えたバッチ式蒸留・連続式蒸留が好ましい。本蒸留における最適な蒸留温度は、前蒸留と同様に使用する精製対象のHFIP基含有芳香族アルコキシシラン(1)の種類によって大きく異なるが、100℃から200℃の範囲で行うことが好ましく、100℃から180℃の範囲で行うのがより好ましい。本蒸留時の圧力も前蒸留時と同様に、特に限定されないが、HFIP基含有芳香族アルコキシシランの沸点に合わせて調節することが好ましく、具体的には0.01~101kPa(大気圧)で本蒸留を実施することが好ましい。 [Main distillation (second distillation step)]
Subsequently, as a second distillation step, main distillation is performed for the purpose of recovering the HFIP group-containing aromatic alkoxysilane (1) and removing the halogenated silane compound (2). There are no particular restrictions on the method of this distillation, and in addition to simple distillation, multi-stage distillation that repeats this, batch-type distillation/continuous distillation equipped with a rectification column, or thin-film distillation for high-boiling compounds. is used. However, from the viewpoint of separation from the halogenated silane compound (2), batch distillation or continuous distillation equipped with a rectifying column is preferred. The optimum distillation temperature in the main distillation varies greatly depending on the type of the HFIP group-containing aromatic alkoxysilane (1) to be purified, which is used in the same manner as in the pre-distillation. C. to 180.degree. C. is more preferable. The pressure during the main distillation is not particularly limited as in the pre-distillation, but it is preferably adjusted according to the boiling point of the HFIP group-containing aromatic alkoxysilane, specifically 0.01 to 101 kPa (atmospheric pressure). Preference is given to carrying out the main distillation.
本実施形態に係るポリシロキサンは、上記本発明のケイ素化合物を重合してなるポリシロキサンであり、少なくとも1つ以上のシロキサン結合を有するものである。ポリシロキサンの製造方法は公知であり、例えば特許文献3や特許文献4に記載の方法を参考にして合成することができる。 [Polysiloxane]
The polysiloxane according to this embodiment is a polysiloxane obtained by polymerizing the silicon compound of the present invention, and has at least one or more siloxane bonds. Methods for producing polysiloxane are known, and can be synthesized with reference to the methods described in Patent Documents 3 and 4, for example.
ケイ素化合物の純度、及び式(2)に該当するクロロシラン化合物の含有量は、島津製作所株式会社製ガスクロマトグラフィー、商品名Shimadzu GC-2010を用い、カラムはキャピラリーカラム DB1(60mm×0.25mmφ×1μm)を用いて測定を行った。 [Gas Chromatograph (GC)]
The purity of the silicon compound and the content of the chlorosilane compound corresponding to the formula (2) were measured using a gas chromatograph manufactured by Shimadzu Corporation under the trade name Shimadzu GC-2010, using a capillary column DB1 (60 mm × 0.25 mmφ × 1 µm ) was used for the measurement.
本実施例においては、ハロゲンとして塩化物イオンを測定した。 [Chloride ion measurement]
In this example, chloride ion was measured as the halogen.
本発明のケイ素化合物が固体状である測定試料及び本発明のケイ素化合物と非水溶性の有機溶媒を含む測定試料はイオンクロマトグラフィーを用いて測定した。イオンクロマトグラフィーによる塩化物イオン測定は測定試料にメチル―t―ブチルエーテル及び超純水を加え攪拌した後、水層をサーモフィッシャーサイエンティフィック株式会社製のイオンクロマトグラフ(DIONEX(登録商標)AQUION)に注入し、測定した。カラムにはDionex(登録商標)Ion Pac AS22を用いた。 [Ion chromatography]
A measurement sample in which the silicon compound of the present invention is solid and a measurement sample containing the silicon compound of the present invention and a water-insoluble organic solvent were measured using ion chromatography. Chloride ion measurement by ion chromatography was performed by adding methyl-t-butyl ether and ultrapure water to the measurement sample and stirring, and then the water layer was subjected to ion chromatography (DIONEX (registered trademark) AQUION) manufactured by Thermo Fisher Scientific Co., Ltd. was injected and measured. Dionex (registered trademark) Ion Pac AS22 was used for the column.
本発明のケイ素化合物又はポリシロキサンと水溶性の有機溶媒を含む試料については、硝酸銀を使用した塩化銀比濁法により測定した。前記塩化銀比濁法はJISB8224:2016に準拠して行うことができる。なお、硝酸はJIS K 8541で規定する質量分率60 %の硝酸を用い、硝酸銀水溶液は1.2mol/Lの硝酸銀水溶液 を用い、測定試料にメタノールを加え均一な試料を調整した後、試料を測定波長335nmで測定を実施した。 [Silver chloride nephelometry]
A sample containing the silicon compound or polysiloxane of the present invention and a water-soluble organic solvent was measured by a silver chloride nephelometry using silver nitrate. The silver chloride turbidimetric method can be performed according to JISB8224:2016. Nitric acid with a mass fraction of 60% specified in JIS K 8541 was used, and silver nitrate aqueous solution was 1.2 mol/L. Measurement was performed at a measurement wavelength of 335 nm.
重合物の分子量はゲル浸透クロマトグラフ(東ソー株式会社製、HLC-8320GPC)を使用してGPCを測定し、ポリスチレン換算により、重量平均分子量(Mw)を算出した。 [Molecular weight measurement]
The molecular weight of the polymer was measured by GPC using a gel permeation chromatograph (manufactured by Tosoh Corporation, HLC-8320GPC), and the weight average molecular weight (Mw) was calculated by polystyrene conversion.
1Lの撹拌機付きオートクレーブに、フェニルトリクロロシラン360g(1.70mol)、塩化アルミニウム5.70g(0.0425mol)を加えた。次いで、窒素置換を実施したのち、内温を5~15℃に維持しながら、ヘキサフルオロアセトン271g(1.63mol)を5時間かけて加え、その後12時間攪拌を継続した。反応終了後、温度計、メカニカルスターラー、ジムロート還流管を備え付け、乾燥窒素雰囲気下に置換した容量3Lのガラス反応装置に、反応液を移し、フラスコ内容物を攪拌しながら60℃に加熱した。その後窒素バブリングさせながら、滴下ポンプを用いて無水エタノール376g(8.16mol)を3時間かけて滴下し、塩化水素除去を行いながらアルコキシ化反応を行った。その後、減圧ポンプを用いて過剰量のエタノールを留去した。得られた混合物に対して水洗操作を行うことで、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼンを含む混合物611g(GCarea%:1-3置換体(メタ体)=86.7%、1-4置換体(パラ体)=3.7%、トリエトキシフェニルシラン=5.3%、その他:4.3%)を得た。得られた混合物中、式(2)で表されるクロロシラン化合物である3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロジエトキシシリルベンゼンはGCにて検出されず(すなわち、検出下限の10質量ppm未満)、塩化物イオン濃度は1.4ppmであった。 [Synthesis Example 1]
360 g (1.70 mol) of phenyltrichlorosilane and 5.70 g (0.0425 mol) of aluminum chloride were added to a 1 L stirred autoclave. Then, after nitrogen substitution, 271 g (1.63 mol) of hexafluoroacetone was added over 5 hours while maintaining the internal temperature at 5 to 15° C., and then stirring was continued for 12 hours. After completion of the reaction, the reaction solution was transferred to a 3 L glass reactor equipped with a thermometer, a mechanical stirrer, and a Dimroth reflux tube and replaced with a dry nitrogen atmosphere, and the contents of the flask were heated to 60°C while stirring. Thereafter, 376 g (8.16 mol) of anhydrous ethanol was added dropwise using a dropping pump over 3 hours while nitrogen bubbling was performed, and an alkoxylation reaction was carried out while removing hydrogen chloride. After that, excess ethanol was distilled off using a vacuum pump. By washing the resulting mixture with water, 611 g of a mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (GCarea%: 1-3 substituted (meta) = 86.7%, 1-4 substituted (para) = 3.7%, triethoxyphenylsilane = 5.3%, others: 4.3%) were obtained. . In the resulting mixture, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilylbenzene, which is the chlorosilane compound represented by formula (2), was analyzed by GC. The chloride ion concentration was 1.4 ppm.
合成例1で得られた3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼンを含む混合物200gに対して蒸留温度125~135℃、減圧度1.2kPaにて単蒸留を行い、190gの3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度88.2%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度3.9%)、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロジエトキシシリルベンゼン(GCにて検出:20質量ppm)からなる留分を得た。得られた留分を蒸留段数15段の蒸留装置を用いて蒸留温度143~146℃、減圧度0.2kPaにて精密蒸留を行うことで、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度99.4%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度0.5%)を固体として144g(収率72%)得た。式(2)で表されるクロロシラン化合物である3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロジエトキシシリルベンゼンはGCにて検出されず(すなわち、検出下限の10質量ppm未満)、塩化物イオン濃度は0.3ppmであった。 [Example 1]
200 g of the mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene obtained in Synthesis Example 1 was distilled at a temperature of 125 to 135°C under reduced pressure. Simple distillation was carried out at a degree of 1.2 kPa, and 190 g of 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 88.2 %), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-isomer: GC purity 3.9%), 3-(2-hydroxy- A fraction consisting of 1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilylbenzene (detected by GC: 20 mass ppm) was obtained. The obtained fraction is subjected to precision distillation at a distillation temperature of 143 to 146 ° C. and a reduced pressure of 0.2 kPa using a distillation apparatus with 15 distillation stages to obtain 3-(2-hydroxy-1,1,1, 3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 99.4%), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl) 144 g (yield 72%) of -triethoxysilylbenzene (para-isomer: GC purity 0.5%) was obtained as a solid. 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilylbenzene, which is a chlorosilane compound represented by formula (2), was not detected by GC (i.e. , less than the detection limit of 10 mass ppm), and the chloride ion concentration was 0.3 ppm.
合成例1で得られた3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼンを含む混合物200gに対して蒸留段数15段の蒸留装置を用いて蒸留温度143~146℃、減圧度0.1kPaにて精密蒸留を行うことで、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度99.2%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度0.4%)を固体として146g(収率73%)得た。式(2)で表されるクロロシラン化合物である3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロジエトキシシリルベンゼンはGCにて検出され、1700質量ppmであり、塩化物イオン濃度は140ppmであった。 [Comparative Example 1]
For 200 g of the mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene obtained in Synthesis Example 1, a distillation apparatus with 15 distillation stages was used. 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilyl by performing precision distillation at a distillation temperature of 143 to 146 ° C. and a reduced pressure of 0.1 kPa using Benzene (meta form: GC purity 99.2%), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para form: GC purity 0.4 %) was obtained as a solid (146 g (yield 73%)). 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilylbenzene, which is a chlorosilane compound represented by formula (2), was detected by GC and weighed 1700 mass. ppm and the chloride ion concentration was 140 ppm.
1Lの撹拌機付きオートクレーブに、ジクロロ(メチル)フェニルシラン325g(1.70mol)、塩化アルミニウム5.70g(0.0425mol)を加えた。次いで、窒素置換を実施したのち、内温を5~15℃に維持しながら、ヘキサフルオロアセトン271g(1.63mol)を5時間かけて加え、その後12時間攪拌を継続した。反応終了後、温度計、メカニカルスターラー、ジムロート還流管を備え付け、乾燥窒素雰囲気下に置換した容量3Lのガラス反応装置に、反応液を移し、フラスコ内容物を攪拌しながら60℃に加熱した。その後窒素バブリングさせながら、滴下ポンプを用いて無水エタノール251g(5.44mol)を3時間かけて滴下し、塩化水素除去を行いながらアルコキシ化反応を行った。その後、減圧ポンプを用いて過剰量のエタノールを留去した。得られた混合物に対して水洗操作を行うことで、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-ジエトキシ(メチル)シリルベンゼンを含む混合物514g(GCarea%:1-3置換体(メタ体)=79.9%、1-4置換体(パラ体)=6.2%、ジエトキシ(メチル)フェニルシラン=4.4%、その他:9.5%)を得た。得られた混合物中、式(2)で表されるクロロシラン化合物である3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロ(ジエトキシ)メチルシリルベンゼンはGCにて検出されず(すなわち、検出下限の10質量ppm未満)、塩化物イオン濃度は6.8ppmであった。 [Synthesis Example 2]
325 g (1.70 mol) of dichloro(methyl)phenylsilane and 5.70 g (0.0425 mol) of aluminum chloride were added to a 1 L stirred autoclave. Then, after nitrogen substitution, 271 g (1.63 mol) of hexafluoroacetone was added over 5 hours while maintaining the internal temperature at 5 to 15° C., and then stirring was continued for 12 hours. After completion of the reaction, the reaction solution was transferred to a 3 L glass reactor equipped with a thermometer, a mechanical stirrer, and a Dimroth reflux tube and replaced with a dry nitrogen atmosphere, and the contents of the flask were heated to 60°C while stirring. Thereafter, 251 g (5.44 mol) of anhydrous ethanol was added dropwise over 3 hours using a dropping pump while nitrogen bubbling was performed, and an alkoxylation reaction was carried out while removing hydrogen chloride. After that, excess ethanol was distilled off using a vacuum pump. By washing the resulting mixture with water, 514 g of a mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene (GCarea %: 1-3 substituted (meta) = 79.9%, 1-4 substituted (para) = 6.2%, diethoxy(methyl)phenylsilane = 4.4%, others: 9.5% ). In the resulting mixture, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chloro(diethoxy)methylsilylbenzene, which is the chlorosilane compound represented by formula (2), It was not detected by GC (that is, less than the detection limit of 10 mass ppm), and the chloride ion concentration was 6.8 ppm.
合成例2で得られた3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-ジエトキシ(メチル)シリルベンゼンを含む混合物200gに対して、蒸留温度97~107℃、減圧度0.5kPaにて単蒸留を行い、得られた留分を再度、蒸留段数15段の蒸留装置を用いて蒸留温度103~106℃、減圧度0.5kPaにて精密蒸留を行うことで、3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-ジエトキシ(メチル)シリルベンゼン(メタ体:GC純度99.9%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-ジエトキシ(メチル)シリルベンゼン(パラ体:GC純度0.1%)を固体として110g(収率55%)得た。式(2)で表されるクロロシラン化合物である3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-クロロ(エトキシ)メチルシリルベンゼンはGCにて検出されず(すなわち、検出下限の10質量ppm未満)、塩化物イオン濃度は9.3ppmであった。 [Example 2]
For 200 g of the mixture containing 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene obtained in Synthesis Example 2, a distillation temperature of 97 to 107 ℃, the degree of pressure reduction of 0.5 kPa, and the obtained fraction is again subjected to precision distillation at a distillation temperature of 103 to 106 ° C. and a degree of pressure reduction of 0.5 kPa using a distillation apparatus with 15 distillation stages. Thus, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene (meta form: GC purity 99.9%), 4-(2- Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene (para-isomer: GC purity 0.1%) was obtained as a solid (110 g, yield 55%). 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chloro(ethoxy)methylsilylbenzene, which is the chlorosilane compound represented by formula (2), was not detected by GC. (that is, less than the detection limit of 10 mass ppm), and the chloride ion concentration was 9.3 ppm.
実施例1に記載の方法にて別途合成した3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度99.4%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度0.5%)の混合物(塩化物イオン濃度=2.5ppm)30g(74mmol)、水、4.2g(233mmol)、酢酸、0.2g(3mmol)を加え、75℃で24時間攪拌することで、HFIP基含有ポリシロキサン高分子化合物を得た。GPCを測定した結果、Mw=1970であり、塩化物イオン濃度は3.9ppmであった。 [Example 3]
3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 99.4% ), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-body: GC purity 0.5%) mixture (chloride ion concentration = 2 .5 ppm) 30 g (74 mmol), water 4.2 g (233 mmol), and acetic acid 0.2 g (3 mmol) were added and stirred at 75° C. for 24 hours to obtain an HFIP group-containing polysiloxane polymer compound. As a result of GPC measurement, Mw=1970 and the chloride ion concentration was 3.9 ppm.
ポリシロキサン高分子化合物を得るために、先述のとおり重縮合反応を進行させる目的で反応溶媒を用いることもできる。実施例1に記載の方法にて別途合成した3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度99.4%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度0.5%)の混合物(塩化物イオン濃度=2.5ppm)28gに反応溶媒としてエタノール12gを加え、70質量%のエタノール溶液(塩化物イオン濃度は1.7ppm)とした後、実施例3と同様の手順でポリシロキサン高分子を得られることが確認できた。反応後にGPCを測定した結果、Mw=1850であり、塩化物イオン濃度は2.7ppmであった。 [Example 4]
In order to obtain a polysiloxane polymer compound, a reaction solvent can also be used for the purpose of advancing the polycondensation reaction as described above. 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 99.4% ), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-body: GC purity 0.5%) mixture (chloride ion concentration = 2 .5 ppm) was added with 12 g of ethanol as a reaction solvent to obtain a 70% by mass ethanol solution (chloride ion concentration was 1.7 ppm), and then the same procedure as in Example 3 was performed to obtain a polysiloxane polymer. It could be confirmed. As a result of GPC measurement after the reaction, Mw=1850 and the chloride ion concentration was 2.7 ppm.
同様に、実施例1に記載の方法にて別途合成した3-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(メタ体:GC純度99.4%)、4-(2-ヒドロキシ-1,1,1,3,3,3-ヘキサフルオロイソプロピル)-トリエトキシシリルベンゼン(パラ体:GC純度0.5%)の混合物(塩化物イオン濃度=2.5ppm)28gに反応溶媒としてトルエン12gを加え、70質量%のトルエン溶液(塩化物イオン濃度は1.0ppm)とした後、実施例3と同様の手順でポリシロキサン高分子を得られることが確認できた。反応後にGPCを測定した結果、Mw=1620であり、塩化物イオン濃度は1.6ppmであった。
[Example 5]
Similarly, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta form: GC purity 99 .4%), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-body: GC purity 0.5%) mixture (chloride ion concentration = 2.5 ppm), 12 g of toluene was added as a reaction solvent to obtain a 70 mass% toluene solution (chloride ion concentration was 1.0 ppm), and then the same procedure as in Example 3 was performed to obtain a polysiloxane polymer. It was confirmed that As a result of GPC measurement after the reaction, Mw was 1620 and the chloride ion concentration was 1.6 ppm.
Claims (13)
- 下記式(1)で表されるケイ素化合物と、下記式(2)で表されるハロゲン化シラン化合物とを含み、前記式(2)で表されるハロゲン化シラン化合物の含有量が0質量ppmよりも多く、1000質量ppm以下である、ケイ素化合物。
(前記式(1)中、R1は、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2はそれぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、nは1~5の整数であり、aは1以上3以下の整数、bは0以上2以下の整数、cは1以上3以下の整数であり、a+b+c=4である。)
(前記式(2)中、R1aは、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2aは、それぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、Xは塩素原子、臭素原子又はヨウ素原子であり、nは1~5の整数であり、aaは1以上3以下の整数、bbは0以上2以下の整数、ccは0以上2以下の整数、ddは1以上3以下の整数であり、aa+bb+cc+dd=4である。) It contains a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2), and the content of the halogenated silane compound represented by the above formula (2) is 0 ppm by mass. more than 1000 mass ppm or less, a silicon compound.
(In the above formula (1), each R 1 is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and each R 2 is independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is 1 It is an integer greater than or equal to 3 and less than or equal to 3, and a + b + c = 4.)
(In the above formula (2), each R 1a is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and R 2a is each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is 1 to 3 an integer, bb is an integer of 0 or more and 2 or less, cc is an integer of 0 or more and 2 or less, dd is an integer of 1 or more and 3 or less, and aa+bb+cc+dd=4.) - 前記ハロゲン化シラン化合物の含有量の上限が100質量ppm以下であることを特徴とする、請求項1に記載のケイ素化合物。 2. The silicon compound according to claim 1, wherein the upper limit of the content of said halogenated silane compound is 100 mass ppm or less.
- 前記式(1)及び前記式(2)中の
(波線と交差する線分は結合手を表す。)
で表される基が、
下記式(2A)~(2D)で表される基からなる群から選択される1種以上であることを特徴とする、請求項1又は2に記載のケイ素化合物。
(それぞれ、波線と交差する線分は結合手を表す。) in the above formula (1) and the above formula (2)
(A line segment that intersects with a wavy line represents a bond.)
The group represented by
3. The silicon compound according to claim 1, which is one or more selected from the group consisting of groups represented by the following formulas (2A) to (2D).
(The line segments intersecting the wavy lines represent bonds, respectively.) - 前記aaが1である、請求項1~3の何れか1項に記載のケイ素化合物。 The silicon compound according to any one of claims 1 to 3, wherein said aa is 1.
- 前記ddが1である、請求項1~4の何れか1項に記載のケイ素化合物。 The silicon compound according to any one of claims 1 to 4, wherein said dd is 1.
- 前記R2aがメチル基又はエチル基である、請求項1~5の何れか1項に記載のケイ素化合物。 The silicon compound according to any one of claims 1 to 5, wherein said R 2a is a methyl group or an ethyl group.
- 前記ハロゲン化シラン化合物が、前記aaが1であり、前記bbが0であり、前記ddが1又は2であり、前記ccが1又は2であり、前記R2aがメチル基又はエチル基である前記式(2)で表される化合物である、請求項1~3の何れか1項に記載のケイ素化合物。 The halogenated silane compound is such that the aa is 1, the bb is 0, the dd is 1 or 2, the cc is 1 or 2 , and the R2a is a methyl group or an ethyl group. The silicon compound according to any one of claims 1 to 3, which is a compound represented by the formula (2).
- 前記式(2A)で表される基で構成される前記式(1)で表されるケイ素化合物(メタ体)の含有量をXaモル、
前記式(2B)で表される基で構成される前記式(1)で表されるケイ素化合物(パラ体)の含有量をYaモルとしたときに、
Ya/(Ya+Xa)<0.10
の関係を満たすことを特徴とする、請求項3に記載のケイ素化合物。 The content of the silicon compound (meta-body) represented by the formula (1) composed of the group represented by the formula (2A) is Xa mol,
When Ya mol is the content of the silicon compound (para-body) represented by the formula (1) composed of the group represented by the formula (2B),
Ya/(Ya+Xa)<0.10
4. The silicon compound according to claim 3, characterized in that it satisfies the relationship: - ハロゲン化物イオン濃度が100質量ppm以下である、請求項1~8の何れか1項に記載のケイ素化合物。 The silicon compound according to any one of claims 1 to 8, which has a halide ion concentration of 100 mass ppm or less.
- 少なくとも下記式(1)で表されるケイ素化合物、及び、下記式(2)で表されるハロゲン化シラン化合物を含む混合物を蒸留して、式(1)で表されるケイ素化合物と、式(1)で表されるケイ素化合物よりも低沸点成分を含む第1の混合物を回収する第1の蒸留工程と、
第1の工程で得られた、前記第1の混合物を蒸留して、式(1)で表されるケイ素化合物を回収する第2の蒸留工程と、を含み、
式(2)で表されるハロゲン化シラン化合物の含有量が1000質量ppm以下である、ことを特徴とする、ケイ素化合物の製造方法。
(前記式(1)中、R1は、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2はそれぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、nは1~5の整数であり、aは1以上3以下の整数、bは0以上2以下の整数、cは1以上3以下の整数であり、a+b+c=4である。)
(前記式(2)中、R1aは、それぞれ独立に、水素原子、炭素数1以上5以下のアルキル基、フェニル基、又は炭素数1以上10以下のフルオロアルキル基であり、R2aは、それぞれ独立に、水素原子、又は炭素数1以上5以下のアルキル基であり、Xは塩素原子、臭素原子又はヨウ素原子であり、nは1~5の整数であり、aaは1以上3以下の整数、bbは0以上2以下の整数、ccは0以上2以下の整数、ddは1以上3以下の整数であり、aa+bb+cc+dd=4である。) A mixture containing at least the silicon compound represented by the following formula (1) and the halogenated silane compound represented by the following formula (2) is distilled to obtain the silicon compound represented by the formula (1) and the formula ( 1) a first distillation step of recovering a first mixture containing a lower boiling point component than the silicon compound represented by;
a second distillation step of distilling the first mixture obtained in the first step to recover the silicon compound represented by formula (1);
A method for producing a silicon compound, characterized in that the content of the halogenated silane compound represented by formula (2) is 1000 mass ppm or less.
(In the above formula (1), each R 1 is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and each R 2 is independently, a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is 1 It is an integer greater than or equal to 3 and less than or equal to 3, and a + b + c = 4.)
(In the above formula (2), each R 1a is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms, and R 2a is each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is 1 to 3 an integer, bb is an integer of 0 or more and 2 or less, cc is an integer of 0 or more and 2 or less, dd is an integer of 1 or more and 3 or less, and aa+bb+cc+dd=4.) - 請求項1~9の何れか1項に記載のケイ素化合物を重合してなるポリシロキサン。 A polysiloxane obtained by polymerizing the silicon compound according to any one of claims 1 to 9.
- ハロゲン化物イオン濃度が1000質量ppm以下である、請求項11に記載のポリシロキサン。 12. The polysiloxane according to claim 11, which has a halide ion concentration of 1000 mass ppm or less.
- 請求項1~9の何れか1項に記載のケイ素化合物を重合する、ポリシロキサンの製造方法。
A method for producing polysiloxane, comprising polymerizing the silicon compound according to any one of claims 1 to 9.
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