TW202246291A - Silicon compound containing hexafluoroisopropanol group, method for producing silicon compound, polysiloxane, and method for producing polysiloxane - Google Patents

Silicon compound containing hexafluoroisopropanol group, method for producing silicon compound, polysiloxane, and method for producing polysiloxane Download PDF

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TW202246291A
TW202246291A TW111103957A TW111103957A TW202246291A TW 202246291 A TW202246291 A TW 202246291A TW 111103957 A TW111103957 A TW 111103957A TW 111103957 A TW111103957 A TW 111103957A TW 202246291 A TW202246291 A TW 202246291A
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silicon compound
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片村友大
中辻惇也
杉田豊
及川祐梨
山中一広
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日商中央硝子股份有限公司
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    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
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    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • C08G77/04Polysiloxanes
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Abstract

Provided are: a silicon compound (HFIP group-containing aromatic alkoxysilane) containing an HFIP group and containing a reduced amount of a specific halogenated silane compound; a method for producing the same; a polysiloxane obtained by polymerizing the silicon compound which contains the HFIP group; and a method for producing the same. Provided is a silicon compound containing a silicon compound represented by formula (1) and a halogenated silane compound represented by formula (2), wherein the content of the halogenated silane compound represented by formula (2) is greater than 0 ppm by mass and no greater than 1,000 ppm by mass.

Description

含六氟異丙醇基之矽化合物、矽化合物之製造方法、聚矽氧烷及聚矽氧烷之製造方法Silicon compound containing hexafluoroisopropanol group, method for producing silicon compound, polysiloxane and method for producing polysiloxane

本發明之一實施方式係關於一種含六氟異丙醇基之矽化合物及其製造方法。又,本發明之一實施方式係關於一種由該矽化合物聚合而成之聚矽氧烷及其製造方法。One embodiment of the present invention relates to a silicon compound containing hexafluoroisopropanol group and its manufacturing method. Also, one embodiment of the present invention relates to a polysiloxane polymerized from the silicon compound and a method for producing the same.

含矽氧烷鍵之高分子化合物(以下有時稱為聚矽氧烷高分子化合物,或簡稱為聚矽氧烷)得益於其較高之耐熱性及透明性等,作為塗佈材料及密封材料用於半導體領域。又,由於具有較高之耐氧電漿性,故亦可用作抗蝕層之材料。Polymer compounds containing siloxane bonds (hereinafter sometimes referred to as polysiloxane polymer compounds, or polysiloxane for short) benefit from their high heat resistance and transparency, and are used as coating materials and Sealing materials are used in the semiconductor field. Also, because of its high resistance to oxygen plasma, it can also be used as a material for the resist layer.

為了將聚矽氧烷高分子化合物用作抗蝕劑,要求其可溶於鹼性顯影液等鹼。作為可溶於鹼性顯影液之方法,可例舉將酸性基導入至聚矽氧烷高分子化合物之方法。作為此種酸性基,可例舉:酚基、羧基、氟甲醇基等。然而,已知含酚基或羧基之聚矽氧烷高分子化合物若於高溫下使用,則存在透明性變差、及出現著色等或耐熱性變差之情況。In order to use a polysiloxane polymer compound as a resist, it is required to be soluble in alkali such as an alkaline developer. As a method for making it soluble in an alkaline developing solution, a method for introducing an acidic group into a polysiloxane polymer compound may, for example, be mentioned. As such an acidic group, a phenolic group, a carboxyl group, a fluoromethanol group etc. are mentioned. However, it is known that when a polysiloxane polymer compound containing a phenolic group or a carboxyl group is used at a high temperature, transparency may deteriorate, coloring may occur, or heat resistance may deteriorate.

專利文獻1及專利文獻2中揭示有一種聚矽氧烷高分子化合物中導入有作為酸性基之氟甲醇基之聚矽氧烷高分子化合物,上述氟甲醇基例如為六氟異丙醇基{2-羥基-1,1,1,3,3,3-氟異丙基[-C(CF 3) 2OH],以下有時稱為HFIP基}。 Patent Document 1 and Patent Document 2 disclose a polysiloxane polymer compound in which a fluoromethanol group as an acidic group is introduced into a polysiloxane polymer compound. The fluoromethanol group is, for example, a hexafluoroisopropanol group { 2-Hydroxy-1,1,1,3,3,3-fluoroisopropyl [-C(CF 3 ) 2 OH], hereinafter sometimes referred to as HFIP group}.

專利文獻1中揭示有一種具有HFIP基之有機矽化合物(R 3Si-CH 2-CH 2-CH 2-C(CF 3) 2OH)之製造方法(R意指碳數1~3之烷氧基)。該有機矽化合物係藉由使CH 2=CH-CH 2-C(CF 3) 2OH所表示之具有HFIP基之化合物及含有碳數1~3之烷氧基的三烷氧基矽烷進行矽氫化而獲得。 Patent Document 1 discloses a method for producing an organosilicon compound (R 3 Si-CH 2 -CH 2 -CH 2 -C(CF 3 ) 2 OH) having a HFIP group (R means an alkane with 1 to 3 carbons oxygen). The organosilicon compound is prepared by siliconizing a compound having a HFIP group represented by CH 2 ═CH-CH 2 -C(CF 3 ) 2 OH and a trialkoxysilane containing an alkoxy group with 1 to 3 carbons. Obtained by hydrogenation.

專利文獻2中揭示有一種高分子化合物,其於僅由矽氧烷構成之主鏈上經由碳數1~20之直鏈狀、支鏈狀、環狀或者橋接環狀2價烴基而鍵結有氟甲醇基。Patent Document 2 discloses a polymer compound, which is bonded via a straight-chain, branched, cyclic, or bridging cyclic divalent hydrocarbon group with 1 to 20 carbons on the main chain composed only of siloxane. A fluoromethanol group.

專利文獻1所記載之有機矽化合物於HFIP基與矽原子之間包含乙烯鍵(-CH 2-CH 2-),專利文獻2所記載之高分子化合物於HFIP基與矽氧烷主鏈之矽原子之間介隔有脂肪族烴基。 The organosilicon compound described in Patent Document 1 contains a vinyl bond (-CH 2 -CH 2 -) between the HFIP group and the silicon atom, and the polymer compound described in Patent Document 2 has a silicon bond between the HFIP group and the siloxane main chain. There are aliphatic hydrocarbon groups between the atoms.

又,專利文獻3及專利文獻4中揭示有一種由HFIP基與矽原子直接鍵結而成之含HFIP基之矽化合物(1)之製造方法、以及由(1)聚合而獲得之含HFIP基之含聚矽氧烷高分子化合物,該聚矽氧烷高分子化合物顯示出高於上述專利文獻1所記載之高分子化合物之耐熱性。亦揭示有該含HFIP基之聚矽氧烷高分子化合物亦兼具透明性及鹼可溶性。 [化1]

Figure 02_image009
[先前技術文獻] [專利文獻] In addition, Patent Document 3 and Patent Document 4 disclose a method for producing a HFIP-group-containing silicon compound (1) formed by directly bonding a HFIP group to a silicon atom, and a HFIP-group-containing compound obtained by (1) polymerization. The polysiloxane-containing polymer compound exhibits heat resistance higher than that of the polymer compound described in Patent Document 1 above. It is also disclosed that the HFIP group-containing polysiloxane polymer compound also has both transparency and alkali solubility. [chemical 1]
Figure 02_image009
[Prior Art Document] [Patent Document]

[專利文獻1]日本專利特開2004-256503號公報 [專利文獻2]日本專利特開2002-55456號公報 [專利文獻3]日本專利特開2014-156461號公報 [專利文獻4]國際公報第2019/167770號 [Patent Document 1] Japanese Patent Laid-Open No. 2004-256503 [Patent Document 2] Japanese Patent Laid-Open No. 2002-55456 [Patent Document 3] Japanese Patent Laid-Open No. 2014-156461 [Patent Document 4] International Publication No. 2019/167770

[發明所欲解決之問題][Problem to be solved by the invention]

例如,專利文獻3及專利文獻4所記載之含HFIP基之矽化合物(1)之製造步驟中使用包含氟以外之鹵素之化合物,故存在獲得含有含氟以外之鹵素之雜質的含HFIP基之矽化合物(1)之可能性。一般情況下烷氧基矽烷用於電子材料用途,故會要求其含鹵素雜質之含量較低。For example, in the production steps of the HFIP group-containing silicon compound (1) described in Patent Document 3 and Patent Document 4, a compound containing halogen other than fluorine is used, so there is a possibility of obtaining a HFIP group-containing impurity containing halogen other than fluorine. Possibility of silicon compound (1). Generally, alkoxysilanes are used in electronic materials, so the content of halogen-containing impurities is required to be low.

本發明人等發現,於專利文獻3及專利文獻4所記載之含HFIP基之矽化合物(1)之製造方法中,含有特定之鹵化矽烷化合物作為含鹵素雜質之一,發現藉由減少該鹵化矽烷化合物之含量,使得含鹵素雜質之含量減少仍有改善之餘地。The present inventors found that in the production methods of the HFIP group-containing silicon compound (1) described in Patent Document 3 and Patent Document 4, a specific halogenated silane compound was contained as one of the halogen-containing impurities, and found that by reducing the halogenated The content of the silane compound reduces the content of halogen-containing impurities and there is still room for improvement.

因此,本發明之課題在於提供一種使特定之鹵化矽烷化合物之含量減少之含有HFIP基之矽化合物(以下亦稱為含HFIP基之芳香族烷氧基矽烷)、其製造方法、由含有HFIP基之矽化合物聚合而成之聚矽氧烷及其製造方法。 [解決問題之技術手段] Therefore, the object of the present invention is to provide a silicon compound containing a HFIP group (hereinafter also referred to as an aromatic alkoxysilane containing a HFIP group) that reduces the content of a specific halosilane compound. Polysiloxane polymerized from a silicon compound and a method for producing the same. [Technical means to solve the problem]

本發明人等針對用以去除含HFIP基之烷氧基矽烷中殘留之含鹵素雜質之新穎方法進行了銳意研究。結果發現,藉由以蒸餾操作將高沸點成分去除後再次進行蒸餾操作,能夠將含HFIP基之烷氧基矽烷中殘留之含鹵素雜質去除。The inventors of the present invention have conducted intensive research on a novel method for removing residual halogen-containing impurities in HFIP-containing alkoxysilanes. As a result, it was found that the halogen-containing impurities remaining in the HFIP group-containing alkoxysilane can be removed by performing the distillation operation after removing the high-boiling point components.

本發明之一實施方式提供一種矽化合物,其包含下述式(1)所表示之矽化合物、及下述式(2)所表示之鹵化矽烷化合物,式(2)所表示之鹵化矽烷化合物之含量多於0質量ppm且為1000質量ppm以下。 [化2]

Figure 02_image011
(式(1)中,R 1分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2分別獨立地為氫原子、或碳數1以上5以下之烷基,n為1~5之整數,a為1以上3以下之整數,b為0以上2以下之整數,c為1以上3以下之整數,a+b+c=4) [化3]
Figure 02_image013
(式(2)中,R 1a分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2a分別獨立地為氫原子、或碳數1以上5以下之烷基,X為氯原子、溴原子或碘原子,n為1~5之整數,aa為1以上3以下之整數,bb為0以上2以下之整數,cc為0以上2以下之整數,dd為1以上3以下之整數,aa+bb+cc+dd=4) One embodiment of the present invention provides a silicon compound, which includes a silicon compound represented by the following formula (1), a halosilane compound represented by the following formula (2), and a compound of the halosilane compound represented by the formula (2) The content is more than 0 mass ppm and 1000 mass ppm or less. [Chem 2]
Figure 02_image011
(In formula (1), R 1 are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R 2 are each independently a hydrogen atom, Or an alkyl group with a carbon number of 1 to 5, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is an integer of 1 to 3, a+b+c=4) [Chem 3]
Figure 02_image013
(In formula (2), R 1a are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, phenyl, or a fluoroalkyl group with a carbon number of 1 to 10, and R 2a are each independently a hydrogen atom, Or an alkyl group with a carbon number of 1 to 5, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer from 1 to 5, aa is an integer from 1 to 3, bb is an integer from 0 to 2, and cc is An integer between 0 and 2, dd is an integer between 1 and 3, aa+bb+cc+dd=4)

鹵化矽烷化合物之含量之上限可為100質量ppm以下。The upper limit of the content of the halosilane compound may be 100 mass ppm or less.

式(1)及式(2)中之 [化4]

Figure 02_image015
(與波浪線交叉之線段表示鍵結鍵) 所表示之基可為選自由下述式(2A)~(2D)所表示之基所組成之群中之一種以上。 [化5]
Figure 02_image017
(各個與波浪線交叉之線段表示鍵結鍵) [Chemical 4] in formula (1) and formula (2)
Figure 02_image015
(A segment intersecting with a wavy line represents a bonding bond) The group represented may be one or more kinds selected from the group consisting of groups represented by the following formulas (2A) to (2D). [chemical 5]
Figure 02_image017
(Each line segment crossing the wavy line represents a bond bond)

aa可為1。aa can be 1.

dd可為1。dd can be 1.

R 2a可為甲基或乙基。 R 2a can be methyl or ethyl.

鹵化矽烷化合物可為aa為1,bb為0,dd為1或2,cc為1或2,R 2a為甲基或乙基之式(2)所表示之化合物。 The halogenated silane compound may be a compound represented by formula (2) in which aa is 1, bb is 0, dd is 1 or 2, cc is 1 or 2, and R 2a is methyl or ethyl.

於將包含式(2A)所表示之基之式(1)所表示之矽化合物(間位體)之含量設為Xa莫耳,且 將包含式(2B)所表示之基之式(1)所表示之矽化合物(對位體)之含量設為Ya莫耳時, 可滿足如下關係: Ya/(Ya+Xa)<0.10。 When the content of the silicon compound (metasite) represented by the formula (1) containing the group represented by the formula (2A) is set as Xa mole, and When the content of the silicon compound (parasite) represented by the formula (1) containing the group represented by the formula (2B) is Ya mole, The following relationship can be satisfied: Ya/(Ya+Xa)<0.10.

鹵化物離子濃度可為100質量ppm以下。The halide ion concentration may be 100 mass ppm or less.

本發明之一實施方式提供一種矽化合物之製造方法,其特徵在於包括: 第1蒸餾步驟,其對至少包含下述式(1)所表示之矽化合物、及下述式(2)所表示之鹵化矽烷化合物的混合物進行蒸餾,將包含式(1)所表示之矽化合物、及沸點低於式(1)所表示之矽化合物之成分的第1混合物回收;以及 第2蒸餾步驟,其對第1步驟中所得之包含式(1)所表示之矽化合物及沸點低於式(1)所表示之矽化合物之成分的第1混合物進行蒸餾,將式(1)所表示之矽化合物回收;且 式(2)所表示之鹵化矽烷化合物之含量為1000質量ppm以下。 [化6]

Figure 02_image019
(上述式(1)中,R 1分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2分別獨立地為氫原子、或碳數1以上5以下之烷基,n為1~5之整數,a為1以上3以下之整數,b為0以上2以下之整數,c為1以上3以下之整數,a+b+c=4) [化7]
Figure 02_image021
(上述式(2)中,R 1a分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2a分別獨立地為氫原子、或碳數1以上5以下之烷基,X為氯原子、溴原子或碘原子,n為1~5之整數,aa為1以上3以下之整數,bb為0以上2以下之整數,cc為0以上2以下之整數,dd為1以上3以下之整數,aa+bb+cc+dd=4) One embodiment of the present invention provides a method for producing a silicon compound, which is characterized by comprising: a first distillation step, which contains at least a silicon compound represented by the following formula (1) and a silicon compound represented by the following formula (2): The mixture of halogenated silane compounds is distilled to recover the first mixture containing the silicon compound represented by the formula (1) and the components having a boiling point lower than the silicon compound represented by the formula (1); and a second distillation step for the first Distilling the first mixture comprising the silicon compound represented by formula (1) and components having a boiling point lower than the silicon compound represented by formula (1) obtained in step 1, and recovering the silicon compound represented by formula (1); and The content of the halogenated silane compound represented by formula (2) is 1000 mass ppm or less. [chemical 6]
Figure 02_image019
(In the above formula ( 1 ), R1 are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R2 are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is an integer of 1 to 3, a+b+c=4 ) [C7]
Figure 02_image021
(In the above formula (2), R 1a are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R 2a are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is an integer of 1 to 3, bb is an integer of 0 to 2, cc is an integer from 0 to 2, dd is an integer from 1 to 3, aa+bb+cc+dd=4)

本發明之一實施方式提供一種聚矽氧烷,其係由上述中之任一種矽化合物聚合而成。One embodiment of the present invention provides a polysiloxane, which is polymerized from any one of the above-mentioned silicon compounds.

鹵化物離子濃度可為1000質量ppm以下。The halide ion concentration may be 1000 mass ppm or less.

本發明之一實施方式提供一種聚矽氧烷之製造方法,其係使上述中之任一種矽化合物聚合。 [發明之效果] One embodiment of the present invention provides a method for producing polysiloxane, which is to polymerize any one of the above-mentioned silicon compounds. [Effect of Invention]

根據本發明,能夠提供一種使特定之鹵化矽烷化合物之含量減少之含有HFIP基之矽化合物(含HFIP基之芳香族烷氧基矽烷)、其製造方法、由含有HFIP基之矽化合物聚合而成之聚矽氧烷及其製造方法。According to the present invention, it is possible to provide a HFIP-group-containing silicon compound (HFIP-group-containing aromatic alkoxysilane) that reduces the content of a specific halogenated silane compound, its production method, and polymerize the HFIP-group-containing silicon compound The polysiloxane and its production method.

以下,對本發明之實施方式之矽化合物(含HFIP基之芳香族烷氧基矽烷)、其製造方法、聚矽氧烷及其製造方法進行說明。但,本發明之實施方式不可解釋為限定於以下所示之實施方式及實施例所記載之內容。再者,本說明書中,數值範圍之說明中之「X~Y」之記法只要無特別聲明,便表示X以上Y以下。Hereinafter, the silicon compound (HFIP group-containing aromatic alkoxysilane) which is an embodiment of the present invention, its production method, polysiloxane and its production method will be described. However, the embodiments of the present invention should not be construed as being limited to the contents described in the embodiments and examples shown below. In addition, in this specification, the notation of "X-Y" in description of a numerical range means that X is more than Y and below Y unless otherwise specified.

於本說明書中之基(原子團)之記法中,未標明經取代或未經取代之記法包括不具有取代基者及具有取代基者兩者。例如「烷基」不僅指不具有取代基之烷基(未經取代之烷基),亦包括具有取代基之烷基(經取代之烷基)。In the notation of a group (atomic group) in this specification, the notation that does not indicate whether it is substituted or unsubstituted includes both those that do not have a substituent and those that have a substituent. For example, "alkyl" refers not only to an alkyl group without a substituent (unsubstituted alkyl group), but also includes an alkyl group with a substituent (substituted alkyl group).

於本說明書中,「環狀烷基」不僅包括單環結構,亦包括多環結構。「環烷基」亦同樣。In this specification, "cyclic alkyl" includes not only monocyclic structures but also polycyclic structures. The same applies to "cycloalkyl".

於本說明書中,有時將-C(CF 3) 2OH所表示之六氟異丙醇基記作「HFIP基」。 In this specification, the hexafluoroisopropanol group represented by -C(CF 3 ) 2 OH may be referred to as "HFIP group".

本發明之一實施方式之矽化合物包含:以下所說明之含HFIP基之芳香族烷氧基矽烷、及鹵化矽烷化合物。The silicon compound according to one embodiment of the present invention includes: HFIP group-containing aromatic alkoxysilanes and halogenated silane compounds described below.

<含HFIP基之芳香族烷氧基矽烷> 本發明所用之含HFIP基之芳香族烷氧基矽烷(矽化合物)由下述通式(1)所表示,具有HFIP基及矽原子直接鍵結於芳香環之結構。 [化8]

Figure 02_image023
<HFIP group-containing aromatic alkoxysilane> The HFIP group-containing aromatic alkoxysilane (silicon compound) used in the present invention is represented by the following general formula (1), and has a HFIP group directly bonded to a silicon atom in the structure of the aromatic ring. [chemical 8]
Figure 02_image023

式(1)中,R 1分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基。R 2分別獨立地為氫原子、或碳數1以上5以下之烷基,n為1~5之整數。a為1以上3以下之整數,b為0以上2以下之整數,c為1以上3以下之整數,a+b+c=4。 In formula (1), R 1 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group having 1 to 10 carbon atoms. R 2 are each independently a hydrogen atom or an alkyl group having 1 to 5 carbons, and n is an integer of 1 to 5. a is an integer ranging from 1 to 3, b is an integer ranging from 0 to 2, c is an integer ranging from 1 to 3, and a+b+c=4.

於該等中,對於式(1)所表示之含HFIP基之芳香族烷氧基矽烷中之 [化9]

Figure 02_image025
所表示之基,n較佳為1或2,特佳為選自由下式(2A)~式(2D)所表示之基所組成之群中之一種以上。又,a較佳為1。再者,於上式及式(2A)~式(2D)中,與波浪線交叉之線段表示鍵結鍵。 [化10]
Figure 02_image027
Among them, [Chemical 9] in the HFIP group-containing aromatic alkoxysilane represented by formula (1)
Figure 02_image025
As for the groups represented, n is preferably 1 or 2, and particularly preferably at least one selected from the group consisting of groups represented by the following formula (2A) to formula (2D). Also, a is preferably 1. In addition, in the above formula and formula (2A) - formula (2D), the line segment which intersects with the wavy line represents a bond. [chemical 10]
Figure 02_image027

R 1較佳為碳數1~5之烷基,特佳為甲基。 R 1 is preferably an alkyl group having 1 to 5 carbon atoms, particularly preferably a methyl group.

R 2較佳為碳數1~4之直鏈狀烷基、或碳數3~4之支鏈狀烷基,烷基中之全部或一部分之氫原子可被取代為氟原子。具體而言,R 2可使用:甲基、乙基、1-丙基、2-丙基、正丁基、異丁基、第二丁基、第三丁基、2-氟乙基、2,2,2-三氟乙基、3-氟丙基、3,3-二氟丙基、3,3,3-三氟丙基、2,2,3,3-四氟丙基、2,2,3,3,3-五氟丙基、1,1,1,3,3,3-六氟異丙基等,特佳為甲基或乙基。 R 2 is preferably a straight-chain alkyl group having 1-4 carbons or a branched-chain alkyl group having 3-4 carbons, and all or part of the hydrogen atoms in the alkyl group may be substituted with fluorine atoms. Specifically, R can use: methyl, ethyl, 1-propyl, 2 -propyl, n-butyl, isobutyl, second butyl, third butyl, 2-fluoroethyl, 2 ,2,2-trifluoroethyl, 3-fluoropropyl, 3,3-difluoropropyl, 3,3,3-trifluoropropyl, 2,2,3,3-tetrafluoropropyl, 2 , 2,3,3,3-pentafluoropropyl, 1,1,1,3,3,3-hexafluoroisopropyl, etc., particularly preferably methyl or ethyl.

<鹵化矽烷化合物> 本發明之矽化合物所含之鹵化矽烷化合物由下述式(2)所表示。如下所述,下述式(2)所表示之鹵化矽烷化合物較佳為不包含於本發明之矽化合物中,但於含HFIP基之芳香族烷氧基矽烷(1)之製造步驟上,原料或者副反應物可能包含鹵素及/或鹵素化合物,故難以使本發明之矽化合物中之鹵化矽烷化合物之含量成為0質量ppm。本發明之矽化合物之特徵在於,下述式(2)所表示之鹵化矽烷化合物之含量得到空前減少。 [化11]

Figure 02_image029
<Halogenated silane compound> The halogenated silane compound contained in the silicon compound of this invention is represented by following formula (2). As described below, the halogenated silane compound represented by the following formula (2) is preferably not included in the silicon compound of the present invention, but in the production process of the HFIP group-containing aromatic alkoxysilane (1), the raw material Or the side reactants may contain halogen and/or halogen compounds, so it is difficult to make the content of the halosilane compound in the silicon compound of the present invention 0 mass ppm. The silicon compound of the present invention is characterized in that the content of the halogenated silane compound represented by the following formula (2) is unprecedentedly reduced. [chemical 11]
Figure 02_image029

式(2)中,R 1a分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2a分別獨立地為氫原子、或碳數1以上5以下之烷基。X為氯原子、溴原子或碘原子,n為1~5之整數,aa為1以上3以下之整數,bb為0以上2以下之整數,cc為0以上2以下之整數,dd為1以上3以下之整數,aa+bb+cc+dd=4。 In formula (2), R 1a are each independently a hydrogen atom, an alkyl group with 1 to 5 carbon atoms, a phenyl group, or a fluoroalkyl group with 1 to 10 carbon atoms, and R 2a are each independently a hydrogen atom, or An alkyl group having 1 to 5 carbon atoms. X is a chlorine atom, bromine atom or iodine atom, n is an integer of 1 to 5, aa is an integer of 1 to 3, bb is an integer of 0 to 2, cc is an integer of 0 to 2, and dd is 1 or more Integers below 3, aa+bb+cc+dd=4.

於該等中,關於式(2)所表示之鹵化矽烷化合物中之 [化12]

Figure 02_image031
所表示之基,n可為1或2,尤其是可為選自由下式(2A)~式(2D)所表示之基所組成之群中之一種以上。又,aa可為1。再者,於上述式及式(2A)~式(2D)中,與波浪線交叉之線段表示鍵結鍵。 [化13]
Figure 02_image033
Among them, regarding [Chemical 12] in the halogenated silane compound represented by the formula (2)
Figure 02_image031
In the group represented, n may be 1 or 2, and in particular may be at least one selected from the group consisting of groups represented by the following formula (2A) to formula (2D). Also, aa may be 1. In addition, in the said formula and formula (2A) - a formula (2D), the line segment which intersects with a wavy line represents a bond. [chemical 13]
Figure 02_image033

於一實施方式中,dd可為1。In one embodiment, dd can be 1.

R 1a可為碳數1~5之烷基,尤其是可為甲基。 R 1a may be an alkyl group having 1 to 5 carbon atoms, especially a methyl group.

R 2a可為碳數1~4之直鏈狀烷基、或碳數3~4之支鏈狀烷基,烷基中之全部或一部分氫原子可被取代為氟原子。具體而言,作為R 2a,可例示:甲基、乙基、1-丙基、2-丙基、正丁基、異丁基、第二丁基、第三丁基、2-氟乙基、2,2,2-三氟乙基、3-氟丙基、3,3-二氟丙基、3,3,3-三氟丙基、2,2,3,3-四氟丙基、2,2,3,3,3-五氟丙基、1,1,1,3,3,3-六氟異丙基等,尤其是可為甲基或乙基。 R 2a may be a linear alkyl group having 1 to 4 carbons or a branched alkyl group having 3 to 4 carbons, and all or part of the hydrogen atoms in the alkyl group may be substituted with fluorine atoms. Specifically, examples of R 2a include methyl, ethyl, 1-propyl, 2-propyl, n-butyl, isobutyl, second-butyl, third-butyl, and 2-fluoroethyl. , 2,2,2-trifluoroethyl, 3-fluoropropyl, 3,3-difluoropropyl, 3,3,3-trifluoropropyl, 2,2,3,3-tetrafluoropropyl , 2,2,3,3,3-pentafluoropropyl, 1,1,1,3,3,3-hexafluoroisopropyl, etc., especially methyl or ethyl.

本發明之矽化合物主要包含式(1)所表示之含HFIP基之芳香族烷氧基矽烷,於一實施方式中,式(2)所表示之鹵化矽烷化合物之含量多於0質量ppm且為1000質量ppm以下。較佳為式(2)所表示之鹵化矽烷化合物之含量之上限為100質量ppm以下。於本發明之矽化合物中,式(2)所表示之鹵化矽烷化合物之含量越少越佳,可為0質量ppm,但於含HFIP基之芳香族烷氧基矽烷(1)之製造步驟上,原料或者副反應物可能包含鹵素及/或鹵素化合物,故難以使本發明之矽化合物中之鹵化矽烷化合物之含量成為0質量ppm。又,基於用以檢測鹵化矽烷化合物之技術層面之觀點考慮,可將檢測極限設為下限。例如,可將10質量ppm設為下限。於本說明書中,式(2)所表示之鹵化矽烷化合物之含量係使用氣相層析法進行測定。The silicon compound of the present invention mainly includes HFIP-containing aromatic alkoxysilane represented by formula (1). In one embodiment, the content of the halogenated silane compound represented by formula (2) is more than 0 mass ppm and is 1000 mass ppm or less. Preferably, the upper limit of the content of the halogenated silane compound represented by the formula (2) is 100 mass ppm or less. In the silicon compound of the present invention, the less the content of the halogenated silane compound represented by the formula (2), the better, it can be 0 mass ppm, but in the production step of the HFIP-containing aromatic alkoxysilane (1) , The raw materials or side-reactants may contain halogen and/or halogen compounds, so it is difficult to make the content of the halosilane compound in the silicon compound of the present invention 0 mass ppm. In addition, the detection limit may be set as a lower limit from a technical point of view for detecting the halide silane compound. For example, 10 mass ppm can be set as the lower limit. In this specification, the content of the halosilane compound represented by formula (2) is measured using gas chromatography.

於一實施方式中,本發明之矽化合物較佳為鹵化物離子濃度為100質量ppm以下。於本說明書中,所測定之鹵化物離子以亦包含式(2)所表示之鹵化矽烷化合物所含之鹵素在內之鹵化物離子進行評價。所測定之鹵化物離子為氯化物離子、溴化物離子或碘化物離子。In one embodiment, the silicon compound of the present invention preferably has a halide ion concentration of 100 mass ppm or less. In this specification, the halide ion to be measured is evaluated as a halide ion including the halogen contained in the halosilane compound represented by formula (2). The halide ion measured is chloride ion, bromide ion or iodide ion.

於本發明之矽化合物中,鹵化物離子濃度可為0質量ppm,如上所述,於使用鹵素化合物之製造步驟上,難以使鹵化物離子濃度為0,又,基於用以檢測鹵化物離子濃度之技術層面之觀點考量,可將檢測極限設為下限。例如,可將0.1質量ppm設為下限。於本說明書中,鹵化物離子濃度可根據測定試樣選取最佳測定方法。本發明之矽化合物為固體狀之測定試樣、以及包含本發明之矽化合物及非水溶性有機溶劑之測定試樣係使用離子層析法進行測定。又,包含本發明之矽化合物或聚矽氧烷及水溶性有機溶劑之測定試樣、例如下述聚矽氧烷之製造方法中所使用之包含反應溶劑之測定試樣係使用氯化銀比濁法進行測定。In the silicon compound of the present invention, the concentration of halide ions may be 0 mass ppm. As mentioned above, it is difficult to make the concentration of halide ions 0 in the manufacturing process using halogen compounds. Furthermore, based on the method used to detect the concentration of halide ions From the point of view of the technical level, the detection limit can be set as the lower limit. For example, 0.1 mass ppm can be set as the lower limit. In this specification, the halide ion concentration can be determined by selecting the best measurement method according to the measurement sample. A measurement sample in which the silicon compound of the present invention is a solid, and a measurement sample containing the silicon compound of the present invention and a water-insoluble organic solvent are measured using ion chromatography. Also, the measurement sample containing the silicon compound or polysiloxane of the present invention and a water-soluble organic solvent, for example, the measurement sample containing a reaction solvent used in the production method of polysiloxane described below uses silver chloride ratio Turbidimetric measurement.

於一實施方式中,於在包含矽化合物之溶液中測定鹵化物離子濃度之情形時,可由包含有機溶劑之測定試樣之鹵化物離子濃度計算本發明之矽化合物之鹵化物離子濃度。例如,可由自包含有機溶劑之測定試樣之鹵化物離子濃度(ppm)中減去有機溶劑之鹵化物離子濃度(ppm)所得之鹵化物離子濃度(ppm)、以及包含有機溶劑之測定試樣之重量(g),獲得除來自有機溶劑之鹵化物離子以外之上述測定試樣之鹵化物離子量(g)(以下記為鹵化物離子量(1))。又,可由包含有機溶劑之測定試樣之濃度(質量%)、及包含有機溶劑之測定試樣之重量(g),獲得包含有機溶劑之測定試樣中之矽化合物之質量(g)。認為上述中所得之鹵化物離子量(1)來自矽化合物,故可由鹵化物離子量(1)及測定試樣中之矽化合物之質量(g),計算矽化合物之鹵化物離子濃度(ppm)。In one embodiment, when the halide ion concentration is measured in a solution containing a silicon compound, the halide ion concentration of the silicon compound of the present invention can be calculated from the halide ion concentration of a measurement sample containing an organic solvent. For example, the halide ion concentration (ppm) obtained by subtracting the halide ion concentration (ppm) of the organic solvent from the halide ion concentration (ppm) of the measurement sample containing the organic solvent, and the measurement sample containing the organic solvent The weight (g) of the above-mentioned measurement sample except the halide ion derived from the organic solvent (g) was obtained (hereinafter referred to as the halide ion amount (1)). Also, the mass (g) of the silicon compound in the measurement sample containing the organic solvent can be obtained from the concentration (% by mass) of the measurement sample containing the organic solvent and the weight (g) of the measurement sample containing the organic solvent. It is believed that the amount of halide ions (1) obtained above comes from the silicon compound, so the halide ion concentration (ppm) of the silicon compound can be calculated from the amount of halide ions (1) and the mass (g) of the silicon compound in the measured sample .

於一實施方式中,於將包含式(2A)所表示之基之式(1)所表示之矽化合物(間位體)之含量設為Xa莫耳,且將包含式(2B)所表示之基之式(1)所表示之矽化合物(對位體)之含量設為Ya莫耳時, 可滿足如下關係: Ya/(Ya+Xa)<0.10。 In one embodiment, when the content of the silicon compound (metasite) represented by the formula (1) containing the group represented by the formula (2A) is set as Xa mole, and the content of the silicon compound (metasite) represented by the formula (2B) is When the content of the silicon compound (para-body) represented by the formula (1) of the base is set as Ya mole, The following relationship can be satisfied: Ya/(Ya+Xa)<0.10.

本發明之實施方式之矽化合物於室溫(例如20℃)下為固體,藉由滿足上述關係,可提昇該固體之流動性。尤其是上述關係式之值越小,流動性越呈提昇之趨勢,就固體之操作性之觀點而言較佳。The silicon compound according to the embodiment of the present invention is solid at room temperature (for example, 20° C.), and by satisfying the above relationship, the fluidity of the solid can be improved. In particular, the smaller the value of the above relational expression, the more fluidity tends to be improved, which is preferable from the viewpoint of solid operability.

已知間位體與對位體之聚合反應性不同,藉由滿足上述關係,可抑制聚合反應性之差異。尤其是上述關係式之值越小,聚合反應性之差異越呈受到抑制之趨勢,就聚合物之品質或製造之穩定性之觀點而言較佳。It is known that the meta-body and the para-body have different polymerization reactivity, and by satisfying the above relationship, the difference in polymerization reactivity can be suppressed. In particular, the smaller the value of the above relational expression, the more the variation in polymerization reactivity tends to be suppressed, which is preferable from the viewpoint of polymer quality and production stability.

[矽化合物之製造方法] 本發明之矽化合物之製造方法可使用含HFIP基之芳香族烷氧基矽烷(1)之製造方法,並無特別限定。典型之製造方法之說明如下所述。 [Manufacturing method of silicon compound] The method for producing the silicon compound of the present invention can be the method for producing the HFIP group-containing aromatic alkoxysilane (1), and is not particularly limited. A description of a typical manufacturing method is as follows.

通式(1)所表示之化合物為公知,例如可參考專利文獻3或專利文獻4所記載之方法進行合成。The compound represented by the general formula (1) is known, and can be synthesized by referring to the method described in Patent Document 3 or Patent Document 4, for example.

[純化方法] 合成之含HFIP基之芳香族烷氧基矽烷(1)中包含原料或副反應中生成之鹵素及/或鹵素化合物。即,由於純化前之狀態之矽化合物中包含如上所述之鹵素及/或鹵素化合物,故若進行先前之純化操作,則易於生成式(2)所表示之鹵化矽烷化合物。因此,於本發明之矽化合物之製造方法中,於一實施方式中,使用以下之純化方法。 [purification method] The synthesized HFIP group-containing aromatic alkoxysilane (1) contains halogen and/or halogen compounds generated in raw materials or side reactions. That is, since the above-mentioned halogen and/or halogen compound are contained in the silicon compound before purification, the halogenated silane compound represented by the formula (2) can be easily produced by performing the previous purification operation. Therefore, in the production method of the silicon compound of the present invention, in one embodiment, the following purification method is used.

本發明中之純化方法之特徵在於藉由如下步驟減少含鹵素雜質:第1步驟,其將式(1)所表示之含HFIP基之芳香族烷氧基矽烷供於蒸餾步驟,將包含該含HFIP基之芳香族烷氧基矽烷、以及沸點低於該含HFIP基之芳香族烷氧基矽烷之成分的混合物回收;繼而,第2步驟,其將第1步驟中所得之包含該含HFIP基之芳香族烷氧基矽烷、及沸點低於該含HFIP基之芳香族烷氧基矽烷之成分的混合物再次供於蒸餾步驟,將該含HFIP基之芳香族烷氧基矽烷回收。以下,對操作詳細地進行說明。The purification method in the present invention is characterized in that the halogen-containing impurities are reduced by the following steps: In the first step, the HFIP group-containing aromatic alkoxysilane represented by formula (1) is used in the distillation step, and the The mixture of HFIP-based aromatic alkoxysilane and components with a boiling point lower than the HFIP-containing aromatic alkoxysilane is recovered; then, the second step, which contains the HFIP-containing group obtained in the first step The mixture of the aromatic alkoxysilane and the components having a boiling point lower than the HFIP-containing aromatic alkoxysilane is again used in the distillation step to recover the HFIP-containing aromatic alkoxysilane. Hereinafter, the operation will be described in detail.

[預蒸餾(第1蒸餾步驟)] 於本發明中,對含HFIP基之芳香族烷氧基矽烷進行蒸餾(預蒸餾)作為第1蒸餾步驟,以去除高沸點成分。於不實施預蒸餾而直接實施精密蒸餾(正式蒸餾)之情形(先前之純化操作之情形)時,式(2)所表示之鹵化矽烷化合物會作為副產物生成。推測其原因在於,含HFIP基之芳香族烷氧基矽烷中殘留之高沸點之含鹵素雜質藉由蒸餾時之熱量而分解,此時,所生成之鹵化氫與烷氧基(Si-OR 2)發生交換反應而生成上述副產物。上述熱分解反應雖然分解速度較慢,但於蒸餾中持續發生,故難以自含HFIP基之芳香族烷氧基矽烷中將作為含鹵素雜質之鹵化矽烷化合物完全分離。 [Pre-distillation (first distillation step)] In the present invention, the HFIP group-containing aromatic alkoxysilane is distilled (pre-distillation) as the first distillation step to remove high boiling point components. When the precision distillation (main distillation) is directly performed without pre-distillation (in the case of the previous purification operation), the halogenated silane compound represented by the formula (2) is produced as a by-product. It is speculated that the reason is that the residual high-boiling halogen-containing impurities in the HFIP-containing aromatic alkoxysilane are decomposed by the heat of distillation. At this time, the generated hydrogen halide and alkoxy (Si-OR 2 ) exchange reaction to generate the above-mentioned by-products. Although the above thermal decomposition reaction is relatively slow, it continues to occur during distillation, so it is difficult to completely separate the halogenated silane compound as a halogen-containing impurity from the HFIP-containing aromatic alkoxysilane.

另一方面,藉由預蒸餾,可將包含該含HFIP基之芳香族烷氧基矽烷、及沸點低於該含HFIP基之芳香族烷氧基矽烷之成分的混合物回收,去除作為釜殘留物之引起熱分解之高沸點之含鹵素雜質。藉由對該操作中所得之蒸餾餾分再次進行蒸餾純化,自含HFIP基之芳香族烷氧基矽烷中將鹵化矽烷化合物分離,可減少含鹵素雜質。On the other hand, by pre-distillation, the mixture containing the HFIP group-containing aromatic alkoxysilane and components having a boiling point lower than the HFIP group-containing aromatic alkoxysilane can be recovered and removed as a still residue Halogen-containing impurities with high boiling points that cause thermal decomposition. By distilling and purifying the distillation fraction obtained in this operation again, the halogenated silane compound is separated from the aromatic alkoxysilane containing HFIP group, and the halogen-containing impurities can be reduced.

預蒸餾之方法並無特別限制,除簡單蒸餾以外,可使用反覆進行簡單蒸餾之多級蒸餾或具備精餾塔之批次式蒸餾、連續式蒸餾,又,於高沸點化合物之情形時,可使用薄膜式蒸餾等。蒸餾中之最佳蒸餾溫度根據純化對象之含HFIP基之芳香族烷氧基矽烷(1)之種類而有較大不同,較佳為於100℃至200℃之範圍內進行。若溫度過高,則有因熱分解而產率降低之虞。更佳為於100℃至180℃之範圍內進行預蒸餾。預蒸餾時之壓力並無特別限定,較佳為根據含HFIP基之芳香族烷氧基矽烷之沸點進行調節,具體而言,較佳為於0.01~101 kPa(大氣壓)下實施預蒸餾。The method of pre-distillation is not particularly limited. In addition to simple distillation, multi-stage distillation of repeated simple distillation or batch distillation and continuous distillation with rectification tower can be used. In addition, in the case of high boiling point compounds, it can be Thin film distillation or the like is used. The optimal distillation temperature in distillation varies greatly depending on the type of HFIP group-containing aromatic alkoxysilane (1) to be purified, and it is preferably carried out within the range of 100°C to 200°C. If the temperature is too high, there is a possibility that the yield may decrease due to thermal decomposition. More preferably, the pre-distillation is carried out in the range of 100°C to 180°C. The pressure during pre-distillation is not particularly limited, but it is preferably adjusted according to the boiling point of the HFIP group-containing aromatic alkoxysilane. Specifically, pre-distillation is preferably performed at 0.01 to 101 kPa (atmospheric pressure).

於本發明中,實施上述預蒸餾後,再次對所得之蒸餾餾分進行蒸餾,藉此減少含鹵素雜質。此時,預蒸餾之蒸餾餾分所含之含鹵素雜質主要為預蒸餾時所副產之鹵化矽烷化合物(2)。因此,可於正式蒸餾前將鹵化矽烷化合物(2)去除。作為此種去除步驟,例如可例舉:以與式(1)中之OR 2相當之醇(所謂HOR 2)進行之再處理或水洗等。 In the present invention, after performing the above-mentioned pre-distillation, the obtained distillation fraction is distilled again, thereby reducing the halogen-containing impurities. At this time, the halogen-containing impurities contained in the pre-distilled distillation fraction are mainly halogenated silane compounds (2) that are by-produced during the pre-distillation. Therefore, the halogenated silane compound (2) can be removed before the formal distillation. As such a removal process, reprocessing with the alcohol (so-called HOR 2 ) corresponding to OR 2 in formula (1), washing with water, etc. are mentioned, for example.

[正式蒸餾(第2蒸餾步驟)] 繼而,進行正式蒸餾作為第2蒸餾步驟,以將含HFIP基之芳香族烷氧基矽烷(1)回收以及將鹵化矽烷化合物(2)去除。正式蒸餾之方法並無特別限制,除簡單蒸餾以外,可使用反覆進行簡單蒸餾之多級蒸餾或具備精餾塔之批次式蒸餾或連續式蒸餾,或者於高沸點化合物之情形時,可使用薄膜式蒸餾等。其中,就與鹵化矽烷化合物(2)分離之觀點而言,較佳為具備精餾塔之批次式蒸餾或連續式蒸餾。正式蒸餾中之最佳蒸餾溫度與預蒸餾同樣地根據使用之純化對象之含HFIP基之芳香族烷氧基矽烷(1)之種類而有較大不同,較佳為於100℃至200℃之範圍內進行,更佳為於100℃至180℃之範圍內進行。正式蒸餾時之壓力亦與預蒸餾時同樣,並無特別限定,較佳為配合含HFIP基之芳香族烷氧基矽烷之沸點進行調節,具體而言,較佳為於0.01~101 kPa(大氣壓)下實施正式蒸餾。 [Main distillation (2nd distillation step)] Then, the main distillation is carried out as the second distillation step to recover the HFIP group-containing aromatic alkoxysilane (1) and remove the halosilane compound (2). There are no special restrictions on the method of formal distillation. In addition to simple distillation, multi-stage distillation with repeated simple distillation or batch distillation or continuous distillation with rectification tower can be used, or in the case of high boiling point compounds, it can be used thin film distillation etc. Among them, from the viewpoint of separation from the halosilane compound (2), batch distillation or continuous distillation equipped with a rectification column is preferable. The optimal distillation temperature in the formal distillation is also different from the pre-distillation according to the type of HFIP group-containing aromatic alkoxysilane (1) used for purification, and it is preferably between 100°C and 200°C within the range, more preferably within the range of 100°C to 180°C. The pressure during the formal distillation is the same as that during the pre-distillation, and there is no special limitation. It is better to adjust it according to the boiling point of the aromatic alkoxysilane containing HFIP groups. ) to carry out formal distillation.

[聚矽氧烷] 本實施方式之聚矽氧烷係由上述本發明之矽化合物聚合而成之聚矽氧烷,係至少具有1個以上之矽氧烷鍵者。聚矽氧烷之製造方法為公知者,例如可參考專利文獻3或專利文獻4所記載之方法進行合成。 [polysiloxane] The polysiloxane of the present embodiment is a polysiloxane polymerized from the above-mentioned silicon compound of the present invention, and has at least one siloxane bond. The production method of polysiloxane is known, for example, the method described in patent document 3 or patent document 4 can be referred to and synthesize|combined.

具體而言,將上述本發明之矽化合物採取至反應容器內之後,將用以使上述本發明之矽化合物水解之水、用以進行縮聚反應之酸觸媒及反應溶劑加入反應器內,繼而,於室溫下或加熱下攪拌反應溶液,進行水解及縮聚反應,藉此可獲得本發明之含HFIP基之聚矽氧烷高分子化合物。Specifically, after the above-mentioned silicon compound of the present invention is taken into the reaction vessel, water for hydrolyzing the above-mentioned silicon compound of the present invention, an acid catalyst for polycondensation reaction, and a reaction solvent are added to the reactor, and then , Stir the reaction solution at room temperature or under heating to carry out hydrolysis and polycondensation reactions, thereby obtaining the polysiloxane polymer compound containing HFIP groups of the present invention.

上述反應溶劑只要是可溶解原料化合物之溶劑即可,溶劑可為水溶性或非水溶性有機溶劑,例如可例舉醇系溶劑或醚系溶劑。本發明中之水溶性有機溶劑係指於水中之溶解性大於50 g/L之有機溶劑,非水溶性有機溶劑係指於水中之溶解性為50 g/L以下之有機溶劑。作為水溶性有機溶劑,可例舉:低級醇、低級醚、低級酮及低級酯等,具體可例舉:甲醇(於水中之溶解性:任意混合)、乙醇(於水中之溶解性:任意混合)、1-丙醇(於水中之溶解性:任意混合)、異丙醇(於水中之溶解性:1000 g/L)、1-丁醇(於水中之溶解性:77 g/L)、二乙醚(於水中之溶解性:60 g/L)、乙腈(於水中之溶解性:1000 g/L)、四氫呋喃(於水中之溶解性:任意混合)、N,N-二甲基甲醯胺(於水中之溶解性:任意混合)、及N-甲基-2-吡咯啶酮(於水中之溶解性:任意混合)等。作為非水溶性溶劑,可例舉:烴、或高級醚、高級酮等,具體可例舉:甲苯(於水中之溶解性:0.526 g/L)、二異丙醚(於水中之溶解性:11 g/L)、及甲基第三丁醚(於水中之溶解性:42 g/L)等。The reaction solvent may be any solvent as long as it can dissolve the raw material compound, and the solvent may be a water-soluble or water-insoluble organic solvent, for example, an alcohol-based solvent or an ether-based solvent. The water-soluble organic solvent in the present invention refers to an organic solvent whose solubility in water is greater than 50 g/L, and the water-insoluble organic solvent refers to an organic solvent whose solubility in water is less than 50 g/L. As water-soluble organic solvents, for example: lower alcohols, lower ethers, lower ketones, and lower esters, etc., specifically, for example: methanol (solubility in water: optional mixing), ethanol (solubility in water: optional mixing ), 1-propanol (solubility in water: mix freely), isopropanol (solubility in water: 1000 g/L), 1-butanol (solubility in water: 77 g/L), Diethyl ether (solubility in water: 60 g/L), acetonitrile (solubility in water: 1000 g/L), tetrahydrofuran (solubility in water: mix freely), N,N-dimethylformyl Amine (solubility in water: optional mixture), N-methyl-2-pyrrolidone (solubility in water: optional mixture), etc. As the non-water-miscible solvent, can exemplify: hydrocarbon, or higher ether, higher ketone etc., specifically can exemplify: toluene (solubility in water: 0.526 g/L), diisopropyl ether (solubility in water: 11 g/L), and methyl tertiary butyl ether (solubility in water: 42 g/L), etc.

於本發明中,由於式(1)所表示之含HFIP基之芳香族烷氧基矽烷中所含之式(2)所表示之鹵化矽烷之含有率減少,故藉由使該等聚合,可獲得鹵素含量較低之聚矽氧烷。於一實施方式中,聚矽氧烷中之鹵化物離子濃度為1000質量ppm以下。 [實施例] In the present invention, since the content rate of the halogenated silane represented by the formula (2) contained in the HFIP group-containing aromatic alkoxysilane represented by the formula (1) is reduced, by polymerizing these, it is possible to Polysiloxanes with lower halogen content are obtained. In one embodiment, the concentration of halide ions in polysiloxane is 1000 mass ppm or less. [Example]

以下,藉由實施例具體地對本發明進行說明,但本發明並不限定於該等實施例。Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited to these Examples.

本實施例中之各種分析係藉由以下所示之方法進行。Various analyzes in this example were performed by the methods shown below.

[氣相層析法(GC)] 關於固體狀或溶液狀試樣,矽化合物之純度、及矽化合物中之相當於式(2)之氯矽烷化合物之含量係使用島津製作所股份有限公司製造之氣相層析儀、商品名Shimadzu GC-2010,使用毛細管柱 DB1(60 mm×0.25 mmϕ×1 μm)作為管柱,進行測定。 [Gas Chromatography (GC)] Regarding solid or solution samples, the purity of the silicon compound and the content of the chlorosilane compound equivalent to formula (2) in the silicon compound were determined using a gas chromatograph manufactured by Shimadzu Corporation, trade name Shimadzu GC -2010, using capillary column DB1 (60 mm×0.25 mmϕ×1 μm) as the column for determination.

[氯化物離子測定] 於本實施例中,測定氯化物離子作為鹵素。 [Determination of chloride ion] In this example, chloride ions were determined as halogens.

[離子層析法] 關於本發明之矽化合物為固體狀之測定試樣、以及包含本發明之矽化合物及非水溶性有機溶劑之測定試樣,使用離子層析法進行測定。利用離子層析法之氯化物離子測定係向測定試樣中添加甲基第三丁醚及超純水進行攪拌後,將水層注入至Thermo Fisher Scientific股份有限公司製造之離子層析儀(DIONEX(註冊商標)AQUION),進行測定。管柱係使用Dionex(註冊商標)Ion Pac AS22。 [Ion Chromatography] A measurement sample in which the silicon compound of the present invention is a solid and a measurement sample containing the silicon compound of the present invention and a water-insoluble organic solvent are measured using ion chromatography. Chloride ion measurement by ion chromatography is to add methyl tertiary butyl ether and ultrapure water to the measurement sample, stir, and inject the water layer into an ion chromatograph (DIONEX) manufactured by Thermo Fisher Scientific Co., Ltd. (registered trademark) AQUION), for measurement. The column system uses Dionex (registered trademark) Ion Pac AS22.

[氯化銀比濁法] 對於包含本發明之矽化合物或聚矽氧烷及水溶性有機溶劑之試樣,藉由使用硝酸銀之氯化銀比濁法進行測定。上述氯化銀比濁法可依據JISB8224:2016而進行。再者,使用JIS K 8541所規定之質量分率60%之硝酸作為硝酸,使用1.2 mol/L之硝酸銀水溶液作為硝酸銀水溶液,向測定試樣中添加甲醇,調整為均勻之試樣後,以測定波長335 nm對試樣實施測定。 [Silver Chloride Turbidimetry] A sample containing the silicon compound or polysiloxane of the present invention and a water-soluble organic solvent is measured by the silver chloride nephelometric method using silver nitrate. The above-mentioned silver chloride turbidimetric method can be performed in accordance with JISB8224:2016. Furthermore, use nitric acid with a mass fraction of 60% specified in JIS K 8541 as nitric acid, use 1.2 mol/L silver nitrate aqueous solution as silver nitrate aqueous solution, add methanol to the measurement sample, adjust to a uniform sample, and measure The sample was measured at a wavelength of 335 nm.

[分子量測定] 關於聚合物之分子量,使用凝膠滲透層析儀(東曹股份有限公司製造,HLC-8320GPC)進行GPC(Gel Permeation Chromatograph,凝膠滲透層析)測定,以聚苯乙烯換算計,算出重量平均分子量(Mw)。 [Molecular weight determination] The molecular weight of the polymer was measured by GPC (Gel Permeation Chromatograph, gel permeation chromatography) using a gel permeation chromatograph (manufactured by Tosoh Co., Ltd., HLC-8320GPC), and the weight average was calculated in terms of polystyrene. Molecular weight (Mw).

[合成例1] 向1 L之帶攪拌機之高壓釜中加入苯基三氯矽烷360 g(1.70 mol)、氯化鋁5.70 g(0.0425 mol)。繼而,實施氮氣置換後,將內溫維持於5~15℃,並歷時5小時加入六氟丙酮271 g(1.63 mol),隨後繼續攪拌12小時。反應結束後,配置溫度計、機械攪拌器及戴氏回流管,將反應液轉移至置換為乾燥氮氣環境之容量3 L之玻璃反應裝置中,攪拌燒瓶內容物並將其加熱至60℃。隨後通入氮氣,使用滴液泵,歷時3小時滴加無水乙醇376 g(8.16 mol),一面去除氯化氫一面進行烷氧化反應。隨後,使用減壓泵,將過量之乙醇蒸餾去除。藉由對所得之混合物進行水洗操作,獲得包含3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯之混合物611 g(GC area%:1-3取代體(間位體)=86.7%、1-4取代體(對位體)=3.7%、三乙氧基苯基矽烷=5.3%、其他:4.3%)。於所得之混合物中,藉由GC未檢測出作為式(2)所表示之氯矽烷化合物之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯二乙氧基矽烷基苯(即,未達檢測下限之10質量ppm),氯化物離子濃度為1.4 ppm。 [Synthesis Example 1] Add 360 g (1.70 mol) of phenyltrichlorosilane and 5.70 g (0.0425 mol) of aluminum chloride into a 1 L autoclave with a stirrer. Then, after nitrogen substitution, 271 g (1.63 mol) of hexafluoroacetone was added over 5 hours while maintaining the internal temperature at 5 to 15° C., and stirring was continued for 12 hours. After the reaction was completed, configure a thermometer, a mechanical stirrer, and a Dairy reflux tube, transfer the reaction solution to a glass reaction device with a capacity of 3 L replaced by a dry nitrogen atmosphere, stir the contents of the flask and heat it to 60°C. Then nitrogen gas was introduced, and 376 g (8.16 mol) of absolute ethanol was added dropwise over 3 hours using a drip pump to carry out alkoxylation reaction while removing hydrogen chloride. Subsequently, the excess ethanol was distilled off using a decompression pump. By washing the resulting mixture with water, 611 g of a mixture containing 3-(2-hydroxyl-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene was obtained ( GC area%: 1-3 substitution body (meta body) = 86.7%, 1-4 substitution body (para body) = 3.7%, triethoxyphenylsilane = 5.3%, others: 4.3%). In the resulting mixture, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)- For chlorodiethoxysilylbenzene (ie, 10 mass ppm below the detection limit), the chloride ion concentration was 1.4 ppm.

[實施例1] 於蒸餾溫度125~135℃、減壓度1.2 kPa下對合成例1中所得之包含3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯之混合物200 g進行簡單蒸餾,獲得包含190 g之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度88.2%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度3.9%)、3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯二乙氧基矽烷基苯(藉由GC檢測出:20質量ppm)之餾分。藉由使用蒸餾級數15級之蒸餾裝置,於蒸餾溫度143~146℃、減壓度0.2 kPa下對所得之餾分進行精密蒸餾,獲得作為固體之144 g(產率72%)之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度99.4%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度0.5%)。藉由GC未檢測出作為式(2)所表示之氯矽烷化合物之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯二乙氧基矽烷基苯(即,未達檢測下限之10質量ppm),氯化物離子濃度為0.3 ppm。 [Example 1] The 3-(2-hydroxyl-1,1,1,3,3,3-hexafluoroisopropyl)-triethyl-1 Simple distillation of 200 g of the mixture of oxysilylbenzenes yielded 190 g of 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilyl Benzene (meta-body: GC purity 88.2%), 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-body: GC purity 3.9%), 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilylbenzene (detected by GC: 20 mass ppm ) fraction. By using a distillation apparatus with 15 distillation stages, the obtained fractions were subjected to precise distillation at a distillation temperature of 143-146°C and a reduced pressure of 0.2 kPa to obtain 144 g (yield 72%) of 3-( 2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (Metasite: GC purity 99.4%), 4-(2-Hydroxy-1, 1,1,3,3,3-Hexafluoroisopropyl)-triethoxysilylbenzene (Para: GC purity 0.5%). 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilane as a chlorosilane compound represented by formula (2) was not detected by GC phenylbenzene (that is, 10 mass ppm below the detection limit), and the chloride ion concentration was 0.3 ppm.

[比較例1] 藉由使用蒸餾級數15級之蒸餾裝置,於蒸餾溫度143~146℃、減壓度0.1 kPa下,對合成例1中所得之包含3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯之混合物200 g進行精密蒸餾,獲得作為固體之146 g(產率73%)之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度99.2%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度0.4%)。藉由GC檢測出作為式(2)所表示之氯矽烷化合物之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯二乙氧基矽烷基苯,為1700質量ppm,氯化物離子濃度為140 ppm。 [Comparative example 1] By using a distillation device with 15 distillation stages, at a distillation temperature of 143-146°C and a reduced pressure of 0.1 kPa, the 3-(2-hydroxyl-1,1,1,3, 200 g of a mixture of 3,3-hexafluoroisopropyl)-triethoxysilylbenzene was subjected to precision distillation to obtain 146 g (yield 73%) of 3-(2-hydroxy-1,1, 1,3,3,3-Hexafluoroisopropyl)-triethoxysilylbenzene (Metasite: GC purity 99.2%), 4-(2-Hydroxy-1,1,1,3,3, 3-Hexafluoroisopropyl)-triethoxysilylbenzene (para: GC purity 0.4%). 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chlorodiethoxysilyl as a chlorosilane compound represented by formula (2) was detected by GC Benzene is 1700 ppm by mass, and the chloride ion concentration is 140 ppm.

若比較實施例1與比較例1,則式(1)所表示之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體)之GC純度及產率大致相同(實施例1之GC純度為99.4%且產率為72%,比較例1之GC純度為99.2%且產率為73%),關於式(2)所表示之氯矽烷化合物及氯化物離子濃度,實施例1所獲得之值明顯低於比較例1。If comparing Example 1 and Comparative Example 1, the 3-(2-hydroxyl-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilyl group represented by formula (1) The GC purity and yield of benzene (metasite) are roughly the same (the GC purity of Example 1 is 99.4% and the yield is 72%, and the GC purity of Comparative Example 1 is 99.2% and the yield is 73%). (2) The concentration of chlorosilane compounds and chloride ions represented in Example 1 is significantly lower than that obtained in Comparative Example 1.

於實施例1及比較例1中共同使用了合成例1中所獲得之原料,由此亦明確本發明之範疇之實施例1作為含氯雜質之減少方法更有效。In Example 1 and Comparative Example 1, the raw materials obtained in Synthesis Example 1 were used together, and it was clear that Example 1, which is within the scope of the present invention, is more effective as a method for reducing chlorine-containing impurities.

[合成例2] 向1 L之帶攪拌機之高壓釜中加入二氯(甲基)苯基矽烷325 g(1.70 mol)、氯化鋁5.70 g(0.0425 mol)。繼而,實施氮氣置換後,將內溫維持於5~15℃,並歷時5小時加入六氟丙酮271 g(1.63 mol),隨後繼續攪拌12小時。反應結束後,配置溫度計、機械攪拌器及戴氏回流管,將反應液轉移至置換為乾燥氮氣環境之容量3 L之玻璃反應裝置中,攪拌燒瓶內容物並將其加熱至60℃。隨後通入氮氣,使用滴液泵,歷時3小時滴加無水乙醇251 g(5.44 mol),一面去除氯化氫一面進行烷氧化反應。隨後,使用減壓泵,將過量之乙醇蒸餾去除。藉由對所得之混合物進行水洗操作,獲得包含3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-二乙氧基(甲基)矽烷基苯之混合物514 g(GC area%:1-3取代體(間位體)=79.9%、1-4取代體(對位體)=6.2%、二乙氧基(甲基)苯基矽烷=4.4%、其他:9.5%)。於所得之混合物中,藉由GC未檢測出作為式(2)所表示之氯矽烷化合物之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯(二乙氧基)甲基矽烷基苯(即,未達檢測下限之10質量ppm),氯化物離子濃度為6.8 ppm。 [Synthesis Example 2] Add 325 g (1.70 mol) of dichloro(methyl)phenylsilane and 5.70 g (0.0425 mol) of aluminum chloride into a 1 L autoclave with a stirrer. Then, after nitrogen substitution, 271 g (1.63 mol) of hexafluoroacetone was added over 5 hours while maintaining the internal temperature at 5 to 15° C., and stirring was continued for 12 hours. After the reaction was completed, configure a thermometer, a mechanical stirrer, and a Dairy reflux tube, transfer the reaction solution to a glass reaction device with a capacity of 3 L replaced by a dry nitrogen atmosphere, stir the contents of the flask and heat it to 60°C. Then nitrogen gas was introduced, and 251 g (5.44 mol) of absolute ethanol was added dropwise over 3 hours using a drip pump to carry out alkoxylation reaction while removing hydrogen chloride. Subsequently, the excess ethanol was distilled off using a decompression pump. By washing the resulting mixture with water, a compound containing 3-(2-hydroxyl-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene was obtained. Mixture 514 g (GC area%: 1-3 substitution body (meta body) = 79.9%, 1-4 substitution body (para body) = 6.2%, diethoxy (methyl) phenyl silane = 4.4% , Others: 9.5%). In the resulting mixture, 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)- Chloro(diethoxy)methylsilylbenzene (ie, 10 mass ppm less than the detection limit), the chloride ion concentration is 6.8 ppm.

[實施例2] 藉由於蒸餾溫度97~107℃、減壓度0.5 kPa下,對合成例2中所得之包含3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-二乙氧基(甲基)矽烷基苯之混合物200 g進行簡單蒸餾,使用蒸餾級數15級之蒸餾裝置,於蒸餾溫度103~106℃、減壓度0.5 kPa下再次對所得之餾分進行精密蒸餾,獲得作為固體之110 g(產率55%)之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-二乙氧基(甲基)矽烷基苯(間位體:GC純度99.9%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-二乙氧基(甲基)矽烷基苯(對位體:GC純度0.1%)。藉由GC未檢測出作為式(2)所表示之氯矽烷化合物之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-氯(乙氧基)甲基矽烷基苯(即,未達檢測下限之10質量ppm),氯化物離子濃度為9.3 ppm。 [Example 2] By distilling at a temperature of 97 to 107°C and a degree of reduced pressure of 0.5 kPa, the 3-(2-hydroxyl-1,1,1,3,3,3-hexafluoroisopropyl)- Simple distillation of 200 g of the mixture of diethoxy(methyl)silylbenzene, using a distillation device with 15 stages of distillation, the distillation temperature is 103-106 ° C, and the degree of reduced pressure is 0.5 kPa. Distillation afforded 110 g (55% yield) of 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silane as a solid Phenylbenzene (Metasite: GC purity 99.9%), 4-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-diethoxy(methyl)silylbenzene (Para: GC purity 0.1%). 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-chloro(ethoxy) as a chlorosilane compound represented by formula (2) was not detected by GC For methylsilylbenzene (ie, 10 mass ppm below the detection limit), the chloride ion concentration was 9.3 ppm.

[實施例3] 藉由向利用實施例1所記載之方法另外合成之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度99.4%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度0.5%)之混合物(氯化物離子濃度=2.5 ppm)30 g(74 mmol)中添加4.2 g(233 mmol)之水、0.2 g(3 mmol)之乙酸,於75℃下攪拌24小時,而獲得含HFIP基之聚矽氧烷高分子化合物。進行GPC測定之結果為Mw=1970,氯化物離子濃度為3.9 ppm。 [Example 3] 3-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta Para-form: GC purity 99.4%), 4-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-form: GC purity 0.5% ) mixture (chloride ion concentration = 2.5 ppm) 30 g (74 mmol) was added 4.2 g (233 mmol) of water, 0.2 g (3 mmol) of acetic acid, stirred at 75 ° C for 24 hours to obtain HFIP containing Based polysiloxane polymer compound. As a result of GPC measurement, Mw=1970, and the chloride ion concentration was 3.9 ppm.

[實施例4] 為了獲得聚矽氧烷高分子化合物,亦可如上所述使用反應溶劑以進行縮聚反應。確認到向利用實施例1所記載之方法另外合成之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度99.4%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度0.5%)之混合物(氯化物離子濃度=2.5 ppm)28 g中添加12 g之乙醇作為反應溶劑,製成70質量%之乙醇溶液(氯化物離子濃度為1.7 ppm)後,可以與實施例3同樣之順序獲得聚矽氧烷高分子。於反應後進行GPC測定,結果為Mw=1850,氯化物離子濃度為2.7 ppm。 [Example 4] In order to obtain the polysiloxane polymer compound, the polycondensation reaction may also be performed using a reaction solvent as described above. It was confirmed that 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (meta-position) synthesized separately by the method described in Example 1 Para-form: GC purity 99.4%), 4-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (para-form: GC purity 0.5% ) mixture (chloride ion concentration = 2.5 ppm) 28 g, add 12 g of ethanol as a reaction solvent, after making a 70% by mass ethanol solution (chloride ion concentration is 1.7 ppm), it can be the same as in Example 3 Sequentially obtain polysiloxane macromolecules. GPC measurement was carried out after the reaction, and the result was Mw=1850, and the chloride ion concentration was 2.7 ppm.

[實施例5] 同樣地,確認到向利用實施例1所記載之方法另外合成之3-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(間位體:GC純度99.4%)、4-(2-羥基-1,1,1,3,3,3-六氟異丙基)-三乙氧基矽烷基苯(對位體:GC純度0.5%)之混合物(氯化物離子濃度=2.5 ppm)28 g中添加12 g之甲苯作為反應溶劑,製成70質量%之甲苯溶液(氯化物離子濃度為1.0 ppm)後,可以與實施例3同樣之順序獲得聚矽氧烷高分子。於反應後進行GPC測定,結果為Mw=1620,氯化物離子濃度為1.6 ppm。 [Example 5] Similarly, it was confirmed that 3-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene synthesized separately by the method described in Example 1 (Meta-form: GC purity 99.4%), 4-(2-Hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-triethoxysilylbenzene (Para-form: GC Purity 0.5%) mixture (chloride ion concentration=2.5 ppm) 28 g, add the toluene of 12 g as reaction solvent, after making the toluene solution of 70 mass % (chloride ion concentration is 1.0 ppm), can be with embodiment 3. Obtain polysiloxane polymer in the same order. GPC measurement was carried out after the reaction, and the result was Mw=1620, and the chloride ion concentration was 1.6 ppm.

Figure 111103957-A0101-11-0002-2
Figure 111103957-A0101-11-0002-2

Claims (13)

一種矽化合物,其包含下述式(1)所表示之矽化合物、及下述式(2)所表示之鹵化矽烷化合物,上述式(2)所表示之鹵化矽烷化合物之含量多於0質量ppm且為1000質量ppm以下, [化1]
Figure 03_image035
(上述式(1)中,R 1分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2分別獨立地為氫原子、或碳數1以上5以下之烷基,n為1~5之整數,a為1以上3以下之整數,b為0以上2以下之整數,c為1以上3以下之整數,a+b+c=4) [化2]
Figure 03_image037
(上述式(2)中,R 1a分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2a分別獨立地為氫原子、或碳數1以上5以下之烷基,X為氯原子、溴原子或碘原子,n為1~5之整數,aa為1以上3以下之整數,bb為0以上2以下之整數,cc為0以上2以下之整數,dd為1以上3以下之整數,aa+bb+cc+dd=4)。
A silicon compound comprising a silicon compound represented by the following formula (1) and a halosilane compound represented by the following formula (2), wherein the content of the halosilane compound represented by the above formula (2) is more than 0 mass ppm And it is 1000 mass ppm or less, [Chem. 1]
Figure 03_image035
(In the above formula ( 1 ), R1 are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R2 are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is an integer of 1 to 3, a+b+c=4 ) [Chem 2]
Figure 03_image037
(In the above formula (2), R 1a are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R 2a are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is an integer of 1 to 3, bb is an integer of 0 to 2, cc is an integer ranging from 0 to 2, dd is an integer ranging from 1 to 3, aa+bb+cc+dd=4).
如請求項1之矽化合物,其中上述鹵化矽烷化合物之含量之上限為100質量ppm以下。The silicon compound according to claim 1, wherein the upper limit of the content of the above-mentioned halogenated silane compound is 100 mass ppm or less. 如請求項1之矽化合物,其中 上述式(1)及上述式(2)中之 [化3]
Figure 03_image039
(與波浪線交叉之線段表示鍵結鍵) 所表示之基係選自由下述式(2A)~(2D)所表示之基所組成之群中之一種以上, [化4]
Figure 03_image041
(各個與波浪線交叉之線段表示鍵結鍵)。
Such as the silicon compound of claim 1, wherein [Chemical 3] in the above formula (1) and the above formula (2)
Figure 03_image039
(The line segment intersecting with the wavy line represents the bonding bond) The base represented is one or more selected from the group consisting of the bases represented by the following formulas (2A) to (2D), [Chem. 4]
Figure 03_image041
(Each segment intersecting the wavy line represents a bonding bond).
如請求項1之矽化合物,其中上述aa為1。The silicon compound according to claim 1, wherein aa above is 1. 如請求項1之矽化合物,其中上述dd為1。The silicon compound according to claim 1, wherein the above-mentioned dd is 1. 如請求項1之矽化合物,其中上述R 2a為甲基或乙基。 The silicon compound according to claim 1, wherein the above R 2a is methyl or ethyl. 如請求項1之矽化合物,其中上述鹵化矽烷化合物係上述aa為1,上述bb為0,上述dd為1或2,上述cc為1或2,上述R 2a為甲基或乙基之上述式(2)所表示之化合物。 Such as the silicon compound of claim 1, wherein the above-mentioned halogenated silane compound is the above-mentioned formula in which the above-mentioned aa is 1, the above-mentioned bb is 0, the above-mentioned dd is 1 or 2, the above-mentioned cc is 1 or 2, and the above-mentioned R 2a is methyl or ethyl (2) The compound represented. 如請求項3之矽化合物,其於將包含上述式(2A)所表示之基之上述式(1)所表示之矽化合物(間位體)之含量設為Xa莫耳,且 將包含上述式(2B)所表示之基之上述式(1)所表示之矽化合物(對位體)之含量設為Ya莫耳時,滿足如下關係: Ya/(Ya+Xa)<0.10。 The silicon compound according to Claim 3, wherein the content of the silicon compound (metasite) represented by the above formula (1) containing the group represented by the above formula (2A) is Xa mole, and When the content of the silicon compound (parasite) represented by the above formula (1) containing the group represented by the above formula (2B) is Ya mole, the following relationship is satisfied: Ya/(Ya+Xa)<0.10. 如請求項1之矽化合物,其中鹵化物離子濃度為100質量ppm以下。The silicon compound according to claim 1, wherein the halide ion concentration is 100 mass ppm or less. 一種矽化合物之製造方法,其特徵在於包括: 第1蒸餾步驟,其對至少包含下述式(1)所表示之矽化合物、及下述式(2)所表示之鹵化矽烷化合物之混合物進行蒸餾,將包含式(1)所表示之矽化合物、及沸點低於式(1)所表示之矽化合物之成分的第1混合物回收;以及 第2蒸餾步驟,其對第1步驟中所得之上述第1混合物進行蒸餾,將式(1)所表示之矽化合物回收;且 式(2)所表示之鹵化矽烷化合物之含量為1000質量ppm以下, [化5]
Figure 03_image043
(上述式(1)中,R 1分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2分別獨立地為氫原子、或碳數1以上5以下之烷基,n為1~5之整數,a為1以上3以下之整數,b為0以上2以下之整數,c為1以上3以下之整數,a+b+c=4), [化6]
Figure 03_image045
(上述式(2)中,R 1a分別獨立地為氫原子、碳數1以上5以下之烷基、苯基、或碳數1以上10以下之氟烷基,R 2a分別獨立地為氫原子、或碳數1以上5以下之烷基,X為氯原子、溴原子或碘原子,n為1~5之整數,aa為1以上3以下之整數,bb為0以上2以下之整數,cc為0以上2以下之整數,dd為1以上3以下之整數,aa+bb+cc+dd=4)。
A method for producing a silicon compound, characterized by comprising: a first distillation step of distilling a mixture containing at least a silicon compound represented by the following formula (1) and a halogenated silane compound represented by the following formula (2) , recovering the first mixture comprising the silicon compound represented by the formula (1) and the components having a boiling point lower than the silicon compound represented by the formula (1); 1 The mixture is distilled to recover the silicon compound represented by formula (1); and the content of the halogenated silane compound represented by formula (2) is 1000 mass ppm or less, [Chemical 5]
Figure 03_image043
(In the above formula ( 1 ), R1 are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R2 are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, n is an integer of 1 to 5, a is an integer of 1 to 3, b is an integer of 0 to 2, c is an integer of 1 to 3, a+b+c=4 ), [Chem.6]
Figure 03_image045
(In the above formula (2), R 1a are each independently a hydrogen atom, an alkyl group with a carbon number of 1 to 5, a phenyl group, or a fluoroalkyl group with a carbon number of 1 to 10, and R 2a are each independently a hydrogen atom , or an alkyl group with a carbon number of 1 to 5, X is a chlorine atom, a bromine atom or an iodine atom, n is an integer of 1 to 5, aa is an integer of 1 to 3, bb is an integer of 0 to 2, cc is an integer ranging from 0 to 2, dd is an integer ranging from 1 to 3, aa+bb+cc+dd=4).
一種聚矽氧烷,其由如請求項1至9中任一項之矽化合物聚合而成。A polysiloxane polymerized from the silicon compound according to any one of claims 1 to 9. 如請求項11之聚矽氧烷,其中鹵化物離子濃度為1000質量ppm以下。The polysiloxane according to claim 11, wherein the halide ion concentration is 1000 ppm by mass or less. 一種聚矽氧烷之製造方法,其係使如請求項1至9中任一項之矽化合物聚合。A method for producing polysiloxane, which is to polymerize the silicon compound according to any one of claims 1 to 9.
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