WO2022167111A1 - Procédé de fabrication de condensateurs haute intensité par technique laser - Google Patents

Procédé de fabrication de condensateurs haute intensité par technique laser Download PDF

Info

Publication number
WO2022167111A1
WO2022167111A1 PCT/EP2021/080425 EP2021080425W WO2022167111A1 WO 2022167111 A1 WO2022167111 A1 WO 2022167111A1 EP 2021080425 W EP2021080425 W EP 2021080425W WO 2022167111 A1 WO2022167111 A1 WO 2022167111A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
current capacitor
dielectric
capacitor according
electron storage
Prior art date
Application number
PCT/EP2021/080425
Other languages
German (de)
English (en)
Inventor
Werner Kirsch
Werner Friedrich SCHÜTZE
Original Assignee
Werner Kirsch
Schuetze Werner Friedrich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Werner Kirsch, Schuetze Werner Friedrich filed Critical Werner Kirsch
Priority to DE112021006991.8T priority Critical patent/DE112021006991A5/de
Publication of WO2022167111A1 publication Critical patent/WO2022167111A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/46—Metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes

Definitions

  • the invention relates to a high-current capacitor, also referred to here as a supercapacitor, which is preferably designed on an electronic basis and is suitable for ultra-rapid charging.
  • the storage capacity for electrical energy is preferably higher than that of a lithium battery which is comparable in terms of volume.
  • capacitors based on electronics usually consist of a first conductive coating, preferably Al, Au, Cu, Ag, or Pb; a dielectric, preferably paper, TiO2, or BaTiO3; and a second conductive coating, preferably configured like the first conductive coating.
  • first conductive coating preferably Al, Au, Cu, Ag, or Pb
  • dielectric preferably paper, TiO2, or BaTiO3
  • second conductive coating preferably configured like the first conductive coating.
  • Frequencies i.e. around 10 Hz to 10 GHz, and at relatively low currents, i.e. 10 mA to 100 A, resulting in a small capacitance of 1 pF to 1000 ⁇ F.
  • Storage capacity describes the storage of electrical energy, measured in kWh. Alternatively, the term energy storage capability is also used.
  • the electrical energy results from: where U is the charging voltage measured in volts, V, and C is the capacitance measured in ampere-seconds per volt, As/V.
  • Q C*U
  • the charging currents for an electrically powered car with a battery are between about 10 A when charging at a household socket and about 1000 A to about 2000 A when charging at a powerful charging station.
  • the energy storage capacity is designed to be 30 to 100 kWh.
  • the currents mentioned above are sufficient, for example, to absorb the energy generated when the car brakes quickly and to use it for a subsequent acceleration process.
  • the battery voltages are between 12 and 800 V. 48V is normal for mid-range cars.
  • the energy storage capacity is one tenth of the energy storage capacity of a modern battery.
  • the voltage for the individual cell is 3 to 5 volts and is based on the movement of lithium ions between two electrodes, which are separated by a diaphragm. Due to the mass of the ions, the frequency limit is around 10 Hz.
  • the advantage of high-current capacitors compared to batteries, especially lithium batteries, is the longer service life and freedom from wear.
  • Prior art high current capacitors discharge at about 5% per month.
  • the surface of the starting materials is usually smooth, ie roughness N4 to N11.
  • the design voltage for a single cell is between 2 and 12 V per single cell.
  • Conventional capacitors can be designed for any voltage, with the voltage dependency being determined by the density of the dielectric and the dielectric strength of the material.
  • Conventional capacitors can be designed for any frequency due to the mobility of the electrons. The frequency dependency is due to the high ion mass of the lithium ions compared to the electron mass. The electron mass is about 1836 times larger than the proton mass.
  • US 9312076 B1 relates to a very high energy density ultracapacitor device comprising a plurality of carbon electrodes having an outer surface and an inner surface. A conductive metallic surface is connected to the outer surface. A ceramic is bonded to the inner surface of at least one of the plurality of carbon electrodes. A separator and an electrolyte are provided between the plurality of carbon electrodes.
  • WO 2016057983 A2 relates to an electrode.
  • the electrode comprises a current collector made of aluminum with an aluminum carbide layer on at least one of the surfaces on which at least one layer of carbon nanotubes (CNTs) is arranged.
  • the electrode may include vertically aligned, horizontally aligned, or unaligned (e.g., tangled or clustered) CNTs.
  • the electrode may include compressed CNTs.
  • the electrode can comprise single-wall, double-wall, or multi-wall CNTs.
  • the electrode can include multiple layers of CNTs.
  • the object of the invention is to combine the advantages (frequency, voltage, no discharge, no energy loss) of conventional electronic capacitors and today's supercapacitors (capacity, power-to-weight ratio) and to avoid their disadvantages.
  • the aim is to use modern manufacturing processes based on laser technology to create storage media that correspond to the power-to-weight ratio and energy storage capacity of modern batteries.
  • These high-current capacitors can be implemented as solid-state or film capacitors.
  • the management process takes place on a purely electronic basis.
  • the solid-state capacitor consists of at least one individual cell, which has the following structure: a first metal plate for dissipating electrons, a first electron storage layer, a dielectric, a second electron storage layer and a second metal plate.
  • a stacked capacitor is created by stacking the individual cells on top of each other.
  • a film capacitor consists of: a first metal foil, a first electron storage layer, a layer dielectric, a second electron storage layer, and a second metal foil.
  • the structure of an individual cell in a preferred embodiment of the invention is described below:
  • First step: A first plate is made of conductive material and has a size of preferably about 5 cm by 5 cm. The material is preferably a metal for current dissipation. More preferably, the first plate is made of AL for low cost construction and for currents between 10A and 1000A. More preferably, the first plate is made of Cu in order to achieve even faster discharge and high currents. The magnitude of the currents is determined by the cable cross-section.
  • the first plate is made of Au and/or Pb for special applications that require a high storage capacity.
  • the first plate is made of Ti and/or WC (tungsten carbide) for special applications that require high temperature resistance.
  • the surface of the first plate is provided with a corrugated structure, preferably with a laser, preferably with a height of 1 ⁇ m to 20 ⁇ m, particularly preferably up to 2 ⁇ m. This is referred to as microstructured.
  • the microstructure of the first plate is then provided with a nanostructure, preferably in the range from 60 nm to 600 nm.
  • Nanographite preferably 600m2/g, 0.6g/cm3, is applied as a second conductive layer using a special laser application process, preferably laser-assisted suspension spraying, preferably with a layer height of 20 nm to 200 ⁇ m. This layer stores the electrons. As in the first step, this layer is micro- and/or nano-structured using a laser. Further preferred materials are, each alone or in combination with nanographite: Carbo nanotubes, graphene, graphene nanogel, graphene oxide, graphene acid, WC or Cu in suspension nanoform.
  • Preferred materials are characterized by a high surface area, preferably 600 m2/g to 800 m2/g, and high conductivity.
  • Third step Barium titanate is applied, preferably in suspension form, particularly preferably in nanometer form, using a special laser application method, preferably the one mentioned above. A high-density, amorphous layer with high breakdown field strength and high dielectric constant is formed. The layer height is preferably 20 nm to 200 ⁇ m. Both cannot be achieved simultaneously with previous methods. In a preferred embodiment, this layer is post-structured by means of a laser, as in the first step. A contact surface for the next layer is formed.
  • Fourth step introduction of a second electron storage layer, preferably nanographite, preferably with post-structuring analogous to the second step.
  • Fifth step introduction of the second metal layer, preferably by means of a laser method, particularly preferably with the same laser application method as described above.
  • the laser method for producing carbon hard material layers which produce a droplet-free layer, can be used. These layers have high dielectric strength and high conductivity.
  • a voltage-resistant layer made of diamond-like carbon can be introduced into the dielectric.
  • the dielectric preferably the barium titanate dielectric, can also be produced by laser-supported suspension spraying by using the starting materials BaO and TiO 2 either as a mixture or individually first BaO and then TiO 2 or vice versa.
  • the structure created with steps 1 to 5 has the following advantages: High areal density of the storage medium, when using nanographite 20 m2/cm2 with a layer height of 20 ⁇ m. High breakdown field strength due to the high density and the amorphous state of the dielectric and the laser deposition process used and/or the dielectric used (approx. 20kV/mm). Unlike a crystalline state, there are no dislocations that can cause premature voltage breakdown. High dielectric constant of 100000 instead of 1000 to 10000 in the crystalline state, also due to the high density and the amorphous state of the layer.
  • a capacitor as described above can be designed for 200V, while a conventional supercapacitor is only designed for 5V. That alone leads to a ratio of in quantity via the relationship of energy storage capability and for a design voltage of 200V of storable energy.
  • the charge is released by electrons, which is why large amounts of energy can be absorbed or released in a short time.
  • the rapid current dissipation is further generated by the large contact surfaces of the materials used.
  • the capacitor has a low temperature dependency due to the amorphous dielectric, which is caused by less movement of impurities and dislocations compared to the crystalline state.
  • Charging at charging stations with 100 kW to 1000 kW is possible in seconds to minutes.
  • a capacitor in the charging station can be charged when there is no vehicle in the charging station. This can then be quickly transferred from the capacitor in the charging station to the capacitor in the car.
  • the capacitor is almost wear-free because only electrons are moved. Furthermore, leakage currents can be prevented.
  • FIG. 1 shows a side view of an embodiment of a capacitor according to the invention.
  • the capacitor has an upper metal plate 1a and a lower metal plate 1b.
  • the metal plate is preferably made of one of the materials CU, silver, AL, Pb or stainless steel, which means that the charge can be discharged quickly. Copper is particularly advantageous.
  • the height is approximately 3 ⁇ m to 30 ⁇ m, preferably approximately 5 ⁇ m.
  • the structure is preferably produced with a laser, preferably with the method according to Lasagni, et al. as described in DE 102018200036 B3.
  • Lasagni's method can achieve the required structures simultaneously by rearranging the surface. No nanoparticles are released in the process. Alternatively, corresponding structures can be produced abrasively, preferably with a laser.
  • the capacitor has an upper nanolayer 3 and a lower nanolayer 3 between the upper and lower metal plates.
  • the nanolayers 3 have a height in the range from 5 to 300 ⁇ m, preferably 15 ⁇ m. This increases the contact area.
  • the capacitor has a further layer as a dielectric, preferably barium titanate.
  • TiO 2 or diamond-like non-conductive carbon layers can be used in combination with barium titanate.
  • the layer height of the further layer is preferably between 5 ⁇ m and 30 ⁇ m, preferably 15 ⁇ m.
  • the layer height is selected in accordance with the intended voltage and the breakdown field strength.
  • At least one of the metal plates 1a, 1b can alternatively be designed as a foil and/or produced by suspension deposition welding, preferably laser-assisted.
  • a first metal foil is used and a laser deposition method is used for the second draining electrode.
  • the microstructure and nanostructure 2 is simultaneously or sequentially deposited by rearranging the surface material using conventional lasers according to the method of Lasagni, et al. generated as described in DE 102018200036 B3.
  • the electron storage layer 3, also referred to as a nanolayer, consists of at least one of: nanographite, graphene or nanotubes.
  • the layer 3 consists of highly conductive metals applied in nanometer form by laser-supported suspension build-up welding according to Barbosa, et al. as described in DE102017218592 A1.
  • the dielectric 4 is preferably barium nitrate, more preferably in nanometer form.
  • the application takes place as for the electron blocking layer 3, preferably as in DE 10 2017218 592 A1. This results in an amorphous structure with high density and high dielectric strength and a high dielectric constant.
  • the capacity is determined by the volume of the electron storage layer and the size of the inner surface, by the height of the dielectric 4 and the dielectric strength of the dielectric layer 4. The way the layers are created improves density, dielectric strength and dielectric constant.
  • the capacitor can be designed for any voltage from 1V to 10000V.
  • the capacitor can be designed as a film or stacked capacitor.
  • a single cell of a preferred embodiment of the invention is considered below.
  • the single cell is approximately square in shape with a first side length of 0.05 m and a second side length of 0.05 m. This results in an area of 0.0025m 2 , ie 25 cm2.
  • the single cell has the following preferred layer structure: ⁇ a first layer of metal, preferably aluminum or copper, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a second layer, which is an electron storage layer and is preferably made of nanographite or graphene, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a third layer, which is a dielectric and is preferably made of barium titanate, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a fourth layer, which is an electron storage layer and is preferably made of nanographite or graphene, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; and ⁇ a fifth layer of metal, preferably aluminum or copper, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m.
  • the volume of the electron storage layer is 0.05 cm3.
  • 10 individual cells can be stacked on top of each other in a multicell with a height of 1mm.
  • 10 multicells can be stacked in a block cell with a height of 1 cm.
  • 5 block cells can be stacked. This results in 500 individual cells with a total of 2500 layers in a block.
  • a battery block can have 8 blocks, ie 4000 individual cells.
  • a block cell has a volume of 125 cm3.
  • a block has a volume of 1000cm3 or 1 liter, L.
  • Electrical energy The following estimate refers to the following maximum values: ⁇ The density of the graph of 1g/cm3; at lower density, this layer is increased in proportion to the lower density. ⁇ The breakdown voltage is assumed to be 20kV/mm. ⁇ The dielectric constant is assumed to be 100000.
  • the deposition process used produces a compact layer with high density and high dislocation density, resulting in high dielectric strength and high dielectric constant.
  • the stored electrical energy of the capacitor is given by: For U equal to 230V, the above battery block results in: So a specific energy of 390kWh per L. On the other hand, only 39kWh/dm3 can be achieved without a structural effect. In comparison, strontium-doped BaTiO 3 without a structure is around 8 kWh/dm3. A missing or reduced texture effect can be compensated by increasing the voltage and/or increasing the electron storage volume.
  • the quasi-amorphous layers reduce the temperature dependence of the storage capacity.
  • Weight The weight is determined as follows: The block consists of 2/5 aluminum, 2/5 graphite and 1/5 barium titanate.

Abstract

L'invention concerne un condensateur haute intensité qui présente : une première feuille de métal (1a) présentant une première surface micro-structurée et nano-structurée réalisée par des procédés laser, une première couche d'accumulation d'électrons (3) également appelée nanocouche réalisée par des procédés laser, formée sur la première feuille de métal, un diélectrique (4) (par ex. nitrate de baryum, titanate de baryum, dioxyde de titane...) réalisé par des procédés laser, formé sur la première couche d'accumulation d'électrons, une deuxième couche d'accumulation d'électrons formée sur le diélectrique, une deuxième couche d'accumulation d'électrons (3) formée sur le diélectrique (4), et une deuxième couche de métal présentant une deuxième surface, formée sur la deuxième couche d'accumulation d'électrons. Au moins une des plaques métalliques (1a) peut également être conçue en tant que feuille et/ou fabriquée par soudage par application de suspension, de préférence par laser.
PCT/EP2021/080425 2021-02-05 2021-11-02 Procédé de fabrication de condensateurs haute intensité par technique laser WO2022167111A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112021006991.8T DE112021006991A5 (de) 2021-02-05 2021-11-02 Hochstromkondensator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021201088 2021-02-05
DE102021201088.1 2021-02-05

Publications (1)

Publication Number Publication Date
WO2022167111A1 true WO2022167111A1 (fr) 2022-08-11

Family

ID=78598971

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2021/080425 WO2022167111A1 (fr) 2021-02-05 2021-11-02 Procédé de fabrication de condensateurs haute intensité par technique laser

Country Status (2)

Country Link
DE (1) DE112021006991A5 (fr)
WO (1) WO2022167111A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3442790A1 (de) * 1984-11-23 1986-06-05 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von duennschichtkondensatoren
US20060120020A1 (en) * 2004-12-03 2006-06-08 Dowgiallo Edward J Jr High performance capacitor with high dielectric constant material
US20070001258A1 (en) * 2005-07-01 2007-01-04 Masami Aihara Capacitor
KR20090105704A (ko) * 2008-04-03 2009-10-07 삼성전기주식회사 캐패시터 내장형 인쇄회로기판 및 그 제조방법
EP2763150A1 (fr) * 2011-08-18 2014-08-06 Kanji Shimizu Dispositif de condensateur à film mince
US9312076B1 (en) 2009-12-30 2016-04-12 University Of West Florida Very high energy-density ultracapacitor apparatus and method
WO2016057983A2 (fr) 2014-10-09 2016-04-14 Fascap Systems Corporation Électrode nanostructurée pour dispositif de stockage d'énergie
DE102018200036B3 (de) 2018-01-03 2019-01-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Anordnung zur direkten Laserinterferenzstrukturierung
DE102017218592A1 (de) 2017-10-18 2019-04-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Gleitlagers sowie ein mit dem Verfahren hergestelltes Gleitlager

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3442790A1 (de) * 1984-11-23 1986-06-05 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von duennschichtkondensatoren
US20060120020A1 (en) * 2004-12-03 2006-06-08 Dowgiallo Edward J Jr High performance capacitor with high dielectric constant material
US20070001258A1 (en) * 2005-07-01 2007-01-04 Masami Aihara Capacitor
KR20090105704A (ko) * 2008-04-03 2009-10-07 삼성전기주식회사 캐패시터 내장형 인쇄회로기판 및 그 제조방법
US9312076B1 (en) 2009-12-30 2016-04-12 University Of West Florida Very high energy-density ultracapacitor apparatus and method
EP2763150A1 (fr) * 2011-08-18 2014-08-06 Kanji Shimizu Dispositif de condensateur à film mince
WO2016057983A2 (fr) 2014-10-09 2016-04-14 Fascap Systems Corporation Électrode nanostructurée pour dispositif de stockage d'énergie
DE102017218592A1 (de) 2017-10-18 2019-04-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Gleitlagers sowie ein mit dem Verfahren hergestelltes Gleitlager
DE102018200036B3 (de) 2018-01-03 2019-01-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optische Anordnung zur direkten Laserinterferenzstrukturierung

Also Published As

Publication number Publication date
DE112021006991A5 (de) 2023-11-30

Similar Documents

Publication Publication Date Title
DE69735728T2 (de) Kondensator mit elektrischer Doppelschicht
DE69832537T2 (de) Fibrilkompositelektrode für elektrochemische kondensatoren
DE102018106566A1 (de) Lithiumzellelektrode unter verwendung eines oberflächenmodifizierten kupferfolien-stromkollektors
DE112011102970T5 (de) Nanostrukturierte Elektrode zur pseudokapazitiven Energiespeicherung
DE112012001928B4 (de) Aktives Material und Verwendung des aktiven Materials sowie Magnesiumionenbatterie
EP3900077A1 (fr) Unité cathodique et procédé pour la fabrication d'une unité cathodique
DE102014220953A1 (de) Elektrode für eine Kombination aus Superkondensator und Batterie sowie Verfahren zu deren Herstellung
EP3560022A1 (fr) Accumulateur à l'état solide à ions lithium et procédé de fabrication de celui-ci
WO2003096362A2 (fr) Condensateurs a densite de flux d'energie elevee
EP1552538A2 (fr) Condensateur a double couche, son utilisation et un procede permettant d'augmenter les charges maximales d'electrodes du condensateur a double couche
WO2022167111A1 (fr) Procédé de fabrication de condensateurs haute intensité par technique laser
DE19948742C1 (de) Elektrochemischer Kondensator, insb. Doppelschichtkondensator oder Superkondensator
DE102017207439A1 (de) Elektroden mit verbesserter Beschichtung und Verfahren zu ihrer Herstellung
DE10053276C1 (de) Elektrochemischer Kondensator
EP3614476A1 (fr) Accumulateur lithium-ion à structure en sandwich et son procédé de fabrication
EP2638551B1 (fr) Procédé de fabrication d'un élément mémoire capacitif
DE102012215889A1 (de) Energiespeicher
DE102023200012B3 (de) Batterieelektrode für eine elektrochemische Batteriezelle
DE102017209960A1 (de) Verfahren zum Herstellen einer Elektrode, insbesondere für eine Batterie
DE102020121545A1 (de) Lithium-Ionen-Zelle mit hoher Energiedichte und aktives Anodenmaterial dafür
EP3109928A1 (fr) Procédé de fabrication d'une électrode en particulier pour un accumulateur d'énergie électrochimique et électrode et accumulateur d'énergie
WO2021249700A1 (fr) Matériau de cathode actif pour piles au lithium-ion, et pile au lithium-ion ayant une densité d'énergie élevée
DE102022209885A1 (de) Verfahren zur Herstellung von zumindest einem Halbzeug einer Festkörperbatterie, Halbzeug einer Festkörperbatterie und, bevorzugt gewickelte, Festkörperbatterie
DE102015212182A1 (de) Anode für eine Batteriezelle, Verfahren zur Herstellung einer Anode und Batteriezelle
WO2023174657A1 (fr) Procédé de fabrication d'une électrode pour une cellule électrochimique, électrode composite et cellule électrochimique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21806170

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 112021006991

Country of ref document: DE

REG Reference to national code

Ref country code: DE

Ref legal event code: R225

Ref document number: 112021006991

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21806170

Country of ref document: EP

Kind code of ref document: A1