WO2022162912A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- WO2022162912A1 WO2022162912A1 PCT/JP2021/003409 JP2021003409W WO2022162912A1 WO 2022162912 A1 WO2022162912 A1 WO 2022162912A1 JP 2021003409 W JP2021003409 W JP 2021003409W WO 2022162912 A1 WO2022162912 A1 WO 2022162912A1
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- chip
- metal
- protrusion
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 20
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
Definitions
- the present invention relates to a semiconductor device having a structure that improves heat dissipation.
- the present invention relates to a structure of a semiconductor device capable of improving heat dissipation characteristics.
- protrusions are formed on the back surface of a semiconductor chip, and the protrusions are covered with metal.
- Metals for coating include Ag, Cu, Al, and Ti, which have good heat dissipation properties.
- FIG. 1 is a schematic cross-sectional view showing the configuration of a conventional semiconductor device
- FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductor device according to a first embodiment of the invention
- FIG. FIG. 4 is a schematic cross-sectional view showing the configuration of a semiconductor device according to a second embodiment of the invention
- FIG. 5 is a schematic cross-sectional view showing the configuration of a semiconductor device according to a third embodiment of the invention
- FIG. 12 is a schematic cross-sectional view showing the configuration of a semiconductor device according to a fourth embodiment of the invention
- FIG. 11 is a schematic cross-sectional view showing the configuration of a semiconductor device according to a fifth embodiment of the present invention
- FIG. 1 shows a cross-sectional view of a conventional semiconductor device in which a semiconductor protrusion made of the same semiconductor as the chip is formed on the rear surface of the semiconductor chip.
- FIG. 2 shows the structure according to the first embodiment of the present invention
- FIG. 3 shows the structure according to the second embodiment of the present invention
- FIG. 4 shows the structure according to the third embodiment of the present invention
- FIG. 4, and FIG. 6 shows the structure according to the fifth embodiment of the present invention.
- a semiconductor chip has a chip surface 1 on which a circuit is formed, such as an IC, and a chip back surface 2 opposite to the chip surface.
- the projections formed on the back surface are made of the same material as the semiconductor chip.
- the semiconductor chip is made of silicon
- this projection is made of silicon.
- a method of forming the projections there is a method of forming a pattern with a resist on the back surface of the semiconductor chip and etching with a mixed solution of hydrofluoric acid and nitric acid, or a method of etching with plasma to form projections.
- the protrusions formed from the semiconductor are exposed as shown in FIG. 1, sufficient heat dissipation cannot be obtained.
- Example 2 shows a structure related to Example 1 of the present invention.
- the protrusions 3 formed on the back surface 2 of the semiconductor chip are covered with metal 4 .
- This structure increases the thermal conductivity of the protrusions, making it possible to efficiently dissipate heat generated from the semiconductor chip to the outside.
- the coating metal a metal having good thermal conductivity is preferable, and examples thereof include Ag, Cu, Au, Al, and Ti.
- a further effect can be obtained by forming two layers of metal, and the semiconductor protruding surface is covered with Ti, which has good adhesion to the semiconductor, and Ti is made of any one of Ag, Cu, Au, and Al.
- the two-layer covering structure can further improve heat dissipation.
- the protrusions with metal there is a method of coating the protrusions by vapor-depositing or sputtering the metal on the chip after forming the protrusions.
- the film thickness of the covering metal is preferably 0.3 ⁇ m or more and 10 ⁇ m or less because sufficient heat dissipation can be obtained.
- FIG. 3 is a structural diagram according to Embodiment 2 of the present invention.
- the length of the metal-coated protrusions in the chip central portion 6 is longer than the length of the metal-coated protrusions in the chip peripheral portion 5 .
- This structure can improve the heat dissipation in the center of the chip where heat is likely to be generated, and improve the heat dissipation of the entire chip. It is preferable that the length of the projection in the center of the chip is 1.3 to 3.0 times the length of the projection in the peripheral portion, because heat generation in the center of the chip can be effectively improved.
- FIG. 4 is a structural diagram according to Embodiment 3 of the present invention. As shown in the figure, in Example 3, the length of the metal-coated semiconductor protrusion increases from the chip peripheral portion 5 toward the chip central portion. With this structure, heat dissipation can be improved depending on the degree of heat generated by the chip, and the heat dissipation of the chip can be improved more effectively.
- FIG. 5 is a structural diagram according to Embodiment 4 of the present invention. As shown in the figure, in Example 4, the density of metal-coated protrusions in the center of the chip is higher than that in the periphery. This structure can improve heat dissipation in the center of the chip, which tends to generate heat, and improve the heat dissipation of the entire chip.
- FIG. 6 is a structural diagram according to Embodiment 5 of the present invention.
- the thickness b of the metal covering the protrusion is thicker at the bottom of the protrusion than the thickness a at the side wall of the protrusion.
- the ratio b/a of the thickness a of the metal at the sidewall of the protrusion to the thickness b of the metal at the bottom of the protrusion is desirably 2 to 10 to obtain the desired effect.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
[Problem] To provide a semiconductor device with improved heat dissipation. [Solution] A semiconductor device which, on the semiconductor chip back surface, has protrusions formed from the same semiconductor as that of the semiconductor chip, wherein the protrusions are covered with a metal that has good thermal conductivity. By covering the protrusions with a metal, the heat dissipation from the protruding portion is improved, and it is possible to improve heat dissipation of the entire semiconductor chip. Further, heat dissipation can be further improved by adopting structures in which the protrusions covered by a metal in the chip center portion are longer than the protrusions covered by metal in the chip in the peripheral portion, and structures in which the density of protrusions covered by metal in the chip center portion is higher than the density of the protrusions covered by metal in the chip peripheral portion.
Description
本発明は、放熱性が向上する構造の半導体装置に関する。
The present invention relates to a semiconductor device having a structure that improves heat dissipation.
半導体装置の熱特性を向上させる構造として、半導体チップの裏面に突起を形成する構造が示されている。
As a structure for improving the thermal characteristics of a semiconductor device, a structure in which protrusions are formed on the back surface of a semiconductor chip is shown.
As a structure for improving the thermal characteristics of a semiconductor device, a structure in which protrusions are formed on the back surface of a semiconductor chip is shown.
しかし、半導体チップの裏面に突起を形成する構造のみでは、十分に熱特性を向上することが難しく、特に放熱特性を十分改善することが困難であった。
However, it has been difficult to sufficiently improve the thermal characteristics, particularly the heat radiation characteristics, with only the structure in which the protrusions are formed on the back surface of the semiconductor chip.
上記問題点に鑑み、本発明は、放熱特性を改善しうる半導体素子の構造に関する。
SUMMARY OF THE INVENTION In view of the above problems, the present invention relates to a structure of a semiconductor device capable of improving heat dissipation characteristics.
SUMMARY OF THE INVENTION In view of the above problems, the present invention relates to a structure of a semiconductor device capable of improving heat dissipation characteristics.
本発明の一態様によれば、半導体チップ裏面に突起を形成し、その突起を金属で被覆する。被覆する金属としては、放熱性の良い、Ag、Cu、Al、Ti が挙げられる。
According to one aspect of the present invention, protrusions are formed on the back surface of a semiconductor chip, and the protrusions are covered with metal. Metals for coating include Ag, Cu, Al, and Ti, which have good heat dissipation properties.
本発明によれば、半導体チップの放熱性を十分向上することが可能になる。
According to the present invention, it is possible to sufficiently improve the heat dissipation of the semiconductor chip.
According to the present invention, it is possible to sufficiently improve the heat dissipation of the semiconductor chip.
以下、本発明の実施の形態となる構造について説明する。
Structures according to embodiments of the present invention will be described below.
Structures according to embodiments of the present invention will be described below.
図1に従来の構造の、半導体チップ裏面にチップと同じ半導体から構成される半導体突起が形成された半導体装置の断面図を示す。図２に本発明の実施例１に関わる構造を、図３に本発明の実施例２に係わる構造を、図４に本発明の実施例３に係わる構造を、図５に本発明の実施例４に係わる構造を、図６に本発明の実施例５に係わる構造を示す。図１に示すように半導体チップは、例えばICなど、回路が形成される側であるチップ表面１と、チップ表面と反対側のチップ裏面２を有する。従来技術として、半導体チップ裏面２に、突起３を形成し、チップの放熱性を向上する構造が知られている。ここで裏面に形成される突起は、半導体チップと同じ材料から形成されている。例えば半導体チップがシリコンの場合、この突起はシリコンから形成されている。突起の形成方法としては、半導体チップ裏面にレジストでパターンを形成し、フッ酸と硝酸の混合液エッチングする方法、あるいはプラズマでエッチングし、突起を形成する方法などがある。しかし、図１のように半導体から形成された突起が露出した構造では、十分な放熱性が得られなかった。図２に本発明の実施例１に関わる構造を示す。図に示すように、本発明の構造では半導体チップ裏面２に形成された突起３が金属４で被覆されている。この構造によって、突起部における熱伝導性が増し、半導体チップから発生する熱を効率的に外に放出することが可能になる。被覆する金属としては、熱伝導の良い金属が好ましく、Ag、Cu、Au, Al、Tiが挙げられる。また、金属を２層にすることで更なる効果が得られ、半導体突起面を半導体との密着性の良いTiで被覆し、Tiを、Ag、Cu、Au、Alのいずれか１つの金属で覆う２層構造によって放熱性をさらに向上することができる。金属で突起を被覆する方法としては、突起形成後のチップに金属を蒸着、またはスパッタして突起を被覆する方法が挙げられる。被覆する金属の膜厚は、０．３μｍ以上１０μｍ以下が、十分な放熱性が得られるため好ましい。
FIG. 1 shows a cross-sectional view of a conventional semiconductor device in which a semiconductor protrusion made of the same semiconductor as the chip is formed on the rear surface of the semiconductor chip. FIG. 2 shows the structure according to the first embodiment of the present invention, FIG. 3 shows the structure according to the second embodiment of the present invention, FIG. 4 shows the structure according to the third embodiment of the present invention, and FIG. 4, and FIG. 6 shows the structure according to the fifth embodiment of the present invention. As shown in FIG. 1, a semiconductor chip has achip surface 1 on which a circuit is formed, such as an IC, and a chip back surface 2 opposite to the chip surface. As a conventional technique, a structure is known in which protrusions 3 are formed on the back surface 2 of a semiconductor chip to improve the heat dissipation of the chip. Here, the projections formed on the back surface are made of the same material as the semiconductor chip. For example, if the semiconductor chip is made of silicon, this projection is made of silicon. As a method of forming the projections, there is a method of forming a pattern with a resist on the back surface of the semiconductor chip and etching with a mixed solution of hydrofluoric acid and nitric acid, or a method of etching with plasma to form projections. However, in the structure in which the protrusions formed from the semiconductor are exposed as shown in FIG. 1, sufficient heat dissipation cannot be obtained. FIG. 2 shows a structure related to Example 1 of the present invention. As shown in the figure, in the structure of the present invention, the protrusions 3 formed on the back surface 2 of the semiconductor chip are covered with metal 4 . This structure increases the thermal conductivity of the protrusions, making it possible to efficiently dissipate heat generated from the semiconductor chip to the outside. As the coating metal, a metal having good thermal conductivity is preferable, and examples thereof include Ag, Cu, Au, Al, and Ti. In addition, a further effect can be obtained by forming two layers of metal, and the semiconductor protruding surface is covered with Ti, which has good adhesion to the semiconductor, and Ti is made of any one of Ag, Cu, Au, and Al. The two-layer covering structure can further improve heat dissipation. As a method of coating the protrusions with metal, there is a method of coating the protrusions by vapor-depositing or sputtering the metal on the chip after forming the protrusions. The film thickness of the covering metal is preferably 0.3 μm or more and 10 μm or less because sufficient heat dissipation can be obtained.
FIG. 1 shows a cross-sectional view of a conventional semiconductor device in which a semiconductor protrusion made of the same semiconductor as the chip is formed on the rear surface of the semiconductor chip. FIG. 2 shows the structure according to the first embodiment of the present invention, FIG. 3 shows the structure according to the second embodiment of the present invention, FIG. 4 shows the structure according to the third embodiment of the present invention, and FIG. 4, and FIG. 6 shows the structure according to the fifth embodiment of the present invention. As shown in FIG. 1, a semiconductor chip has a
図３は、本発明の実施例２に係わる構造図である。図に示すように、実施例２においては、チップ中心部６の金属で被覆された突起の長さが、チップ周辺部５の金属で被覆された突起より長くなっている。この構造によって、発熱の生じやすいチップ中心部の放熱性を改善でき、チップ全体の放熱性を向上することができる。チップ中心部の突起の長さは、周辺部の突起の長さの１．３倍から３．０倍であることが、チップ中心部の発熱を効果的に改善できるため好ましい。
FIG. 3 is a structural diagram according toEmbodiment 2 of the present invention. As shown in the figure, in Example 2, the length of the metal-coated protrusions in the chip central portion 6 is longer than the length of the metal-coated protrusions in the chip peripheral portion 5 . This structure can improve the heat dissipation in the center of the chip where heat is likely to be generated, and improve the heat dissipation of the entire chip. It is preferable that the length of the projection in the center of the chip is 1.3 to 3.0 times the length of the projection in the peripheral portion, because heat generation in the center of the chip can be effectively improved.
FIG. 3 is a structural diagram according to
図４は本発明の実施例３に係わる構造図である。図に示すように実施例３では
金属で被覆された半導体突起の長さが、チップ周辺部５からチップ中心部に向かうに従い長くなっている。この構造により、チップの発熱の度合いによって放熱性を改善することができ、さらに効果的にチップの放熱性を向上できる。
FIG. 4 is a structural diagram according toEmbodiment 3 of the present invention. As shown in the figure, in Example 3, the length of the metal-coated semiconductor protrusion increases from the chip peripheral portion 5 toward the chip central portion. With this structure, heat dissipation can be improved depending on the degree of heat generated by the chip, and the heat dissipation of the chip can be improved more effectively.
金属で被覆された半導体突起の長さが、チップ周辺部５からチップ中心部に向かうに従い長くなっている。この構造により、チップの発熱の度合いによって放熱性を改善することができ、さらに効果的にチップの放熱性を向上できる。
FIG. 4 is a structural diagram according to
図５は本発明の実施例４に係わる構造図である。図に示すように実施例４ではチップ中心部における金属で被覆された突起の密度が、周辺部における密度より高くなっている。この構造によって発熱の発生しやすいチップ中心部の放熱性を改善でき、チップ全体の放熱性を向上できる。
FIG. 5 is a structural diagram according to Embodiment 4 of the present invention. As shown in the figure, in Example 4, the density of metal-coated protrusions in the center of the chip is higher than that in the periphery. This structure can improve heat dissipation in the center of the chip, which tends to generate heat, and improve the heat dissipation of the entire chip.
図６は本発明の実施例５に係わる構造図である。図に示すように実施例５では、突起を覆う金属の厚さが、突起側壁部での厚みaと比較して、突起底部での厚みｂのほうが厚くなっている。この構造により特に放熱が必要な突起側壁部での放熱を効果的に行うことができ、チップ全体の放熱性を向上できる。突起側壁部における金属の厚みaと、突起底部における金属の厚みｂの比率b/aは、２から１０であることが効果を得るのに望ましい。
FIG. 6 is a structural diagram according to Embodiment 5 of the present invention. As shown in the figure, in Example 5, the thickness b of the metal covering the protrusion is thicker at the bottom of the protrusion than the thickness a at the side wall of the protrusion. With this structure, heat can be effectively dissipated from the side walls of the protrusions, which particularly require heat dissipation, and the heat dissipation of the entire chip can be improved. The ratio b/a of the thickness a of the metal at the sidewall of the protrusion to the thickness b of the metal at the bottom of the protrusion is desirably 2 to 10 to obtain the desired effect.
１、半導体チップ表面
２、半導体チップ裏面
３、突起
４、金属
５、チップ周辺部
６、チップ中央部
ａ、突起側壁部における金属の厚み
ｂ、突起底部における金属の厚み 1, semiconductorchip front surface 2, semiconductor chip back surface 3, protrusion 4, metal 5, chip peripheral portion 6, chip central portion a, metal thickness at protrusion side wall portion b, metal thickness at protrusion bottom portion
２、半導体チップ裏面
３、突起
４、金属
５、チップ周辺部
６、チップ中央部
ａ、突起側壁部における金属の厚み
ｂ、突起底部における金属の厚み 1, semiconductor
Claims (7)
- 半導体チップ裏面に、前記半導体チップと同じ半導体から構成された突起が形成された構造を有し、前記突起が金属で被覆されていることを特徴とする半導体装置。
1. A semiconductor device, comprising a structure in which a protrusion made of the same semiconductor as said semiconductor chip is formed on the rear surface of said semiconductor chip, said protrusion being covered with a metal.
- 前記金属で被覆された前記突起の長さが、チップ周辺部においてよりチップ中心部においてのほうが長いことを特徴とする請求項１に記載の半導体装置。
2. The semiconductor device according to claim 1, wherein the length of said protrusion covered with said metal is longer at the chip center than at the chip periphery.
- 前記金属で被覆された前記突起の長さが、前記チップ周辺部から前記チップ中心部に向かうに従い長くなることを特徴とする請求項１から２に記載の半導体装置。
3. The semiconductor device according to claim 1, wherein the length of said protrusion covered with said metal increases from said chip peripheral portion toward said chip center portion.
- 前記金属で被覆された前記突起の密度が、前記チップ周辺部においてより前記チップ中心部においてのほうが高いことを特徴とする請求項１から３に記載の半導体装置。
4. The semiconductor device according to claim 1, wherein the density of said protrusions coated with said metal is higher in said chip center than in said chip periphery.
- 前記突起を被覆する前記金属の厚みが、突起側壁部より突起底部が厚く、
前記突起側壁部の金属の膜厚をa、前記突起底部の金属の膜厚をｂとした場合、b/aが２から１０の範囲であることを特徴とする請求項１から４に記載の半導体装置半導体装置。
the thickness of the metal covering the protrusion is thicker at the bottom of the protrusion than at the side wall of the protrusion;
5. The method according to any one of claims 1 to 4, wherein b/a is in the range of 2 to 10, where a is the film thickness of the metal on the sidewall of the protrusion and b is the film thickness of the metal on the bottom of the protrusion. Semiconductor device Semiconductor device.
- 前記突起を被覆する前記金属が、Ag、Cu、Au、Al、Ti のいずれか１つから成ることを特徴とする請求項１から５に記載の半導体装置。
6. A semiconductor device according to claim 1, wherein said metal covering said protrusions is composed of any one of Ag, Cu, Au, Al and Ti.
- 前記突起を被覆する金属が、突起面に形成されたTiと、前記Tiの上に形成されたAg、Cu、Au、Al、Tiのいずれかの２つからなる２層の膜であることを特徴とする、請求項１から５に記載の半導体装置。 The metal covering the protrusion is a two-layer film consisting of Ti formed on the protrusion surface and any one of Ag, Cu, Au, Al, and Ti formed on the Ti. 6. A semiconductor device according to claim 1, characterized in that:
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| US20140015118A1 (en) * | 2012-07-12 | 2014-01-16 | Samsung Electronics Co., Ltd. | Semiconductor chip including heat radiation portion and method of fabricating the semiconductor chip |
| US20150171046A1 (en) * | 2013-09-23 | 2015-06-18 | Texas Instruments Incorporated | Self-adhesive die |
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