JPH02262355A - Heat sink - Google Patents
Heat sinkInfo
- Publication number
- JPH02262355A JPH02262355A JP1083651A JP8365189A JPH02262355A JP H02262355 A JPH02262355 A JP H02262355A JP 1083651 A JP1083651 A JP 1083651A JP 8365189 A JP8365189 A JP 8365189A JP H02262355 A JPH02262355 A JP H02262355A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- ceramic substrate
- thermal conductivity
- substrate
- conductive paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- 230000003746 surface roughness Effects 0.000 claims abstract description 10
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 150000001247 metal acetylides Chemical class 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は放熱板に関し、特に高熱を伴うパワーＩＣなど
からなる回路を用いたセラミック基板上に形成される放
熱板に係わる。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a heat sink, and particularly relates to a heat sink formed on a ceramic substrate using a circuit consisting of a power IC or the like that generates high heat. .
（従来の技術）
従来、高熱を伴うパワーＩＣなどを形成したセラミック
２Ｊ［においては、例えば第１図に示す如く、アルミな
どのセラミック基板１上に導電性の良い導電性ペースト
層２を介して放、熱板３を形成している。なお、図示し
ないが、前記基板１上には回路パターンやパワーＩＣ以
外の電気素子等も形成されている。こうした構成によれ
ば、パワーＩＣから高熱熱を発生しても、この高熱が導
電性ペーストｆｍ及び放熱板３を介して外部へ放出され
るため、高熱がセラミック基板１等にいつまでも残るこ
となく、セラミック基板上に形成した回路パターンや電
気素子の不良を回避することができる・という利点を有
する。(Prior Art) Conventionally, in ceramic 2J [on which power ICs and the like that generate high heat are formed, for example, as shown in FIG. radiating and forming a heat plate 3. Although not shown, circuit patterns and electrical elements other than power ICs are also formed on the substrate 1. According to this configuration, even if high heat is generated from the power IC, this high heat is released to the outside via the conductive paste fm and the heat sink 3, so the high heat does not remain in the ceramic substrate 1 etc. forever. It has the advantage of being able to avoid defects in circuit patterns and electrical elements formed on ceramic substrates.
しかしながら、従来の放熱板においては、セラミック基
板１との接着面が一般に平滑である。従って、前記接着
面に気泡をとりこみ易く、基板１と放熱板との接着性が
低下するという問題点を有水発明は上記事情に鑑みてな
されたもので、セラミック基板との接着面の表面粗さが
５０μｍ以とすることにより、基板との接着性を従来と
比べ著しく向上しえる熱伝導性の良い放熱板を提供する
ことを目的とする。However, in conventional heat sinks, the bonding surface with the ceramic substrate 1 is generally smooth. Therefore, the water-based invention was made in view of the above-mentioned problem that air bubbles are easily trapped in the adhesive surface and the adhesiveness between the substrate 1 and the heat sink is reduced. It is an object of the present invention to provide a heat dissipating plate with good thermal conductivity that can significantly improve adhesion to a substrate compared to conventional ones by setting the thickness to 50 μm or more.
［発明の構成］
（課題を解決するための手段）
本発明は、セラミック基板上に導電性ペースト層を介し
て形成される放熱板において、前記セラミック基板との
接着面の表面粗さが５０μｎ１以上であることを特徴と
する放熱板である。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a heat sink formed on a ceramic substrate via a conductive paste layer, in which the surface roughness of the adhesive surface with the ceramic substrate is 50 μn1 or more. This is a heat sink characterized by the following.
本発明に係るセラミック基板の材料としては、アルミナ
等の酸化物、あるいは金属の炭化物、窒化物等が挙げら
れる。Examples of the material for the ceramic substrate according to the present invention include oxides such as alumina, metal carbides, and nitrides.
本発明に係る導電性ペースト層は、パワーＩＣ等から発
生する高熱をすみやかに放熱板から外部へ放出するため
に熱伝導率が高い材料を選ぶことか好ましい。For the conductive paste layer according to the present invention, it is preferable to select a material with high thermal conductivity so that high heat generated from a power IC or the like can be quickly released from the heat sink to the outside.
本発明に係る放熱板の基板との接着面の表面粗さを５０
μ【１１以上とするのは、５０μｍ未満の場合、十分な
熱伝導率が得られないからである。しかし、５０μ【ｎ
未満の場合でも熱伝導率は低下するものの、従来と比べ
それなりの熱伝導率が得られる。The surface roughness of the adhesive surface of the heat sink according to the present invention to the substrate is set to 50
The reason why μ is set to 11 or more is because if it is less than 50 μm, sufficient thermal conductivity cannot be obtained. However, 50μ[n
Although the thermal conductivity decreases even when the temperature is less than 100 mm, a certain degree of thermal conductivity can be obtained compared to the conventional one.
（作用）
本発明においては、放熱板の基板との接ｔＦ面の表面ｔ
■さを５０μｍ以上とすることにより、セラミック基板
との接着性を良好にするとともに十分な熱伝導率が得ら
れ放熱性を向上できる。(Function) In the present invention, the surface t of the contact tF surface of the heat sink with the substrate is
(2) By setting the thickness to 50 μm or more, good adhesion to the ceramic substrate can be obtained, and sufficient thermal conductivity can be obtained to improve heat dissipation.
（実施例）
以下、本発明の一実施例を第１図及び第２図を参照して
説明する。なお、本発明に係る放熱板の基本溝或は第１
図と同様であり、要点のみを説明する。(Example) An example of the present invention will be described below with reference to FIGS. 1 and 2. Note that the basic groove or the first groove of the heat sink according to the present invention
It is similar to the figure, and only the main points will be explained.
本発明に係る放熱板３のセラミック基板１と表面ｔｎさ
は、５０μｍ以上となっている。ここで、前記接着面の
表面粗さと鏡面仕上げした放熱板の熱抵抗比との関係は
、第２図に示すようになっている。これより、大体表面
粗さが５０μＩＴ１以上の場合熱抵抗比が約０．５以下
であり、熱伝導性が良い。The surface tn of the heat sink 3 according to the present invention relative to the ceramic substrate 1 is 50 μm or more. Here, the relationship between the surface roughness of the adhesive surface and the thermal resistance ratio of the mirror-finished heat sink is as shown in FIG. From this, it can be seen that when the surface roughness is approximately 50 μIT1 or more, the thermal resistance ratio is approximately 0.5 or less, and the thermal conductivity is good.
しかして、上記実施例によれば、放熱板３のセラミック
基板１との接着面の表面粗さを５０μｍ以上とした構成
となっているため、従来と比べて導電性ペースト層２内
に気泡をとりこみにくく、基板１と放熱板と接着性を高
めることができる。However, according to the above embodiment, since the surface roughness of the bonding surface of the heat dissipation plate 3 to the ceramic substrate 1 is set to 50 μm or more, air bubbles are reduced in the conductive paste layer 2 compared to the conventional case. It is difficult to be absorbed, and the adhesion between the substrate 1 and the heat sink can be improved.
また、導電性ペースト層２内に気泡が入りにくくしたた
め、従来の鏡面仕上げした放熱板との熱抵抗比が第２図
に示す如く著しく低い。従って、本発明に係る放熱板が
従来のそれと比べて熱伝導性が優れ、放熱性を向上でき
ることが明らかである。Furthermore, since it is difficult for air bubbles to enter the conductive paste layer 2, the thermal resistance ratio with respect to a conventional mirror-finished heat sink is extremely low as shown in FIG. Therefore, it is clear that the heat sink according to the present invention has superior thermal conductivity and can improve heat dissipation compared to conventional plates.
つまり、パワーＩＣなどで高熱が発生しても導電性ペー
スト層２．放熱板３を介してすみやかに外部へ放出する
ことが可能である。In other words, even if high heat is generated in a power IC or the like, the conductive paste layer 2. It is possible to immediately release the heat to the outside via the heat sink 3.
なお、上記実施例では、セラミック基板の材料としてア
ルミナを用いた場合について述べたが、これに限定され
ず、他の金属の酸化物でもよいし、あるいは金属の炭化
物、窒化物等でもよい。In the above embodiment, a case was described in which alumina was used as the material for the ceramic substrate, but the material is not limited to this, and other metal oxides, metal carbides, nitrides, etc. may also be used.
［発明の効果］
以上詳述した如く本発明によれば、セラミック基板との
接着面の表面粗さが５０μｍｎ以とすることにより、基
板との接着性を従来と比べ著しく向上しえる熱伝導性の
良く放熱性の高い放熱板を提０（できる。[Effects of the Invention] As detailed above, according to the present invention, by setting the surface roughness of the bonding surface to the ceramic substrate to 50 μm or less, the thermal conductivity can be significantly improved in adhesion to the substrate compared to the conventional one. It is possible to provide a heat sink with good heat dissipation.
第１図は放熱板の説明図、第２図は表面↑■さと鏡面仕
上げした放熱板との熱抵抗比との関係を示す特性図であ
る。
１・・・セラミック基板、２・・・導電性ペースト層、
３・・・放熱板。
出願人代理人 弁理士 鈴江武彦FIG. 1 is an explanatory diagram of a heat sink, and FIG. 2 is a characteristic diagram showing the relationship between the surface ↑■ and the thermal resistance ratio of a mirror-finished heat sink. 1... Ceramic substrate, 2... Conductive paste layer,
3... Heat sink. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
れる放熱板において、前記セラミック基板との接着面の
表面粗さが５０μｍ以上であることを特徴とする放熱板
。1. A heat sink formed on a ceramic substrate via a conductive paste layer, characterized in that the surface roughness of the adhesive surface to the ceramic substrate is 50 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1083651A JPH02262355A (en) | 1989-03-31 | 1989-03-31 | Heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1083651A JPH02262355A (en) | 1989-03-31 | 1989-03-31 | Heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02262355A true JPH02262355A (en) | 1990-10-25 |
Family
ID=13808356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1083651A Pending JPH02262355A (en) | 1989-03-31 | 1989-03-31 | Heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02262355A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004046473A1 (en) * | 2004-09-23 | 2006-04-06 | Sew-Eurodrive Gmbh & Co. Kg | Linear motor comprising heat sink and primary is designed to enhance thermal contact between them by selective machining for controlled localized roughness and planarity |
| JP2008270551A (en) * | 2007-04-20 | 2008-11-06 | Nichicon Corp | Positive thermistor apparatus and method of manufacturing the same |
| DE10251411B4 (en) * | 2002-10-16 | 2010-02-18 | Sew-Eurodrive Gmbh & Co. Kg | Device comprising an electronic circuit with at least one semiconductor module |
-
1989
- 1989-03-31 JP JP1083651A patent/JPH02262355A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10251411B4 (en) * | 2002-10-16 | 2010-02-18 | Sew-Eurodrive Gmbh & Co. Kg | Device comprising an electronic circuit with at least one semiconductor module |
| DE102004046473A1 (en) * | 2004-09-23 | 2006-04-06 | Sew-Eurodrive Gmbh & Co. Kg | Linear motor comprising heat sink and primary is designed to enhance thermal contact between them by selective machining for controlled localized roughness and planarity |
| DE102004046473B4 (en) | 2004-09-23 | 2023-04-27 | Sew-Eurodrive Gmbh & Co Kg | linear motor |
| JP2008270551A (en) * | 2007-04-20 | 2008-11-06 | Nichicon Corp | Positive thermistor apparatus and method of manufacturing the same |
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