WO2022157595A1 - 表示装置の作製方法、表示装置、表示モジュール、及び、電子機器 - Google Patents

表示装置の作製方法、表示装置、表示モジュール、及び、電子機器 Download PDF

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Publication number
WO2022157595A1
WO2022157595A1 PCT/IB2022/050160 IB2022050160W WO2022157595A1 WO 2022157595 A1 WO2022157595 A1 WO 2022157595A1 IB 2022050160 W IB2022050160 W IB 2022050160W WO 2022157595 A1 WO2022157595 A1 WO 2022157595A1
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Prior art keywords
layer
light
display device
pixel
electrode
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Ceased
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PCT/IB2022/050160
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
池田隆之
岡崎健一
山根靖正
木村肇
大貫達也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to US18/271,962 priority Critical patent/US20240188378A1/en
Priority to JP2022576237A priority patent/JP7817193B2/ja
Publication of WO2022157595A1 publication Critical patent/WO2022157595A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • One embodiment of the present invention relates to a method for manufacturing a display device.
  • One embodiment of the present invention relates to a display device, a display module, and an electronic device.
  • one embodiment of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), and input/output devices (e.g., touch panels). ), their driving methods, or their manufacturing methods.
  • display devices are expected to be applied to various uses.
  • applications of large display devices include home television devices (also referred to as televisions or television receivers), digital signage (digital signage), and PID (Public Information Display).
  • home television devices also referred to as televisions or television receivers
  • digital signage digital signage
  • PID Public Information Display
  • mobile information terminals such as smart phones and tablet terminals with touch panels are being developed.
  • Devices that require high-definition display devices include, for example, virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR) ) are being actively developed.
  • VR virtual reality
  • AR augmented reality
  • SR alternative reality
  • MR mixed reality
  • a light-emitting device having a light-emitting device As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed.
  • a light-emitting device also referred to as an EL device or an EL element
  • EL electroluminescence
  • Patent Document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element).
  • an island-shaped light-emitting layer can be formed by a vacuum evaporation method using a metal mask (also referred to as a shadow mask).
  • a metal mask also referred to as a shadow mask.
  • the layer contours may be blurred and the edge thickness may be reduced.
  • the thickness of the island-shaped light-emitting layer may vary depending on the location.
  • the manufacturing yield will be low due to low dimensional accuracy of the metal mask and deformation due to heat or the like.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-definition display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a large-sized display device.
  • An object of one embodiment of the present invention is to provide a highly reliable method for manufacturing a display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield.
  • An object of one embodiment of the present invention is to provide a high-definition display device.
  • An object of one embodiment of the present invention is to provide a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a large-sized display device.
  • An object of one embodiment of the present invention is to provide a highly reliable display device.
  • a plurality of first pixel electrodes aligned in a first direction and a plurality of second pixel electrodes aligned in the first direction are aligned in a second direction, forming a first layer over the plurality of first pixel electrodes and over the plurality of second pixel electrodes; forming a first sacrificial layer over the first layer; The first sacrificial layer is processed to expose at least part of each of the plurality of second pixel electrodes, and a second layer is formed on the plurality of first pixel electrodes and on the plurality of second pixel electrodes.
  • a second sacrificial layer over the second layer; processing the second layer and the second sacrificial layer to expose at least a portion of the first sacrificial layer; removing the one sacrificial layer and the second sacrificial layer; forming a third layer on the plurality of first pixel electrodes and on the plurality of second pixel electrodes; A counter electrode is formed, the third layer and the counter electrode are processed, and a region between the first pixel electrode and the second pixel electrode and between the plurality of first pixel electrodes in a top view and at least part of each of the third layer and the counter electrode included in the region between the plurality of second pixel electrodes, forming a protective layer on the counter electrode, and forming the protective layer processed to expose at least part of a portion of the counter electrode that overlaps with the first pixel electrode and at least a portion of a portion that overlaps with the second pixel electrode; and forming a conductive layer.
  • the first protective layer may be formed by the first film formation method, and the second protective layer may be formed by the second film formation method.
  • the first film formation method may be a film formation method that forms a film with higher coverage than the second film formation method.
  • an insulating layer may be formed to cover the ends of the plurality of first pixel electrodes and the ends of the plurality of second pixel electrodes. At least part of the insulating layer may be exposed in the step of processing the third layer and the counter electrode.
  • first resist mask over the first sacrificial layer so as to overlap with the first pixel electrode, and use the first resist mask when processing the first layer and the first sacrificial layer.
  • second resist mask over the second sacrificial layer so as to overlap with the second pixel electrode, and use the second resist mask when processing the second layer and the second sacrificial layer.
  • a third resist mask having a first portion overlapping with the first pixel electrode and a second portion overlapping with the second pixel electrode separated from each other is preferably formed over the counter electrode.
  • a third resist mask is preferably used when processing the third layer and the counter electrode.
  • a fourth resist mask having openings in a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode is preferably formed over the protective layer.
  • a fourth resist mask is preferably used when processing the protective layer.
  • One aspect of the present invention is a plurality of first light emitting devices and a plurality of second light emitting devices, a protective layer on the plurality of first light emitting devices and a plurality of second light emitting devices, and a protective layer on the plurality of second light emitting devices. and a conductive layer on the layer.
  • the first light emitting device includes a first pixel electrode, a first layer on the first pixel electrode, a third layer on the first layer, and a counter electrode on the third layer. have.
  • the second light emitting device includes a second pixel electrode, a second layer on the second pixel electrode, a third layer on the second layer, and a counter electrode on the third layer. have.
  • the first light emitting device and the second light emitting device have the function of emitting lights of different colors.
  • a region between the first pixel electrode and the second pixel electrode in a top view has a first portion where the third layer and the counter electrode are not provided.
  • a region between the two first pixel electrodes in a top view has a second portion where the third layer and the counter electrode are not provided.
  • a region between the two second pixel electrodes in a top view has a third portion where the third layer and the counter electrode are not provided.
  • the counter electrode is electrically connected to the conductive layer in a region overlapping with the first pixel electrode or the second pixel electrode.
  • the above display device may have an air gap surrounded by a protective layer between the first light emitting device and the second light emitting device.
  • the protective layer preferably has a first protective layer over the counter electrode and a second protective layer over the first protective layer.
  • a gap surrounded by the first protective layer and the second protective layer may be provided between the first light emitting device and the second light emitting device.
  • One aspect of the present invention is a display module having a display device having any of the above configurations, and a connector such as a flexible printed circuit (hereinafter referred to as FPC) or TCP (tape carrier package) attached.
  • FPC flexible printed circuit
  • TCP tape carrier package
  • a display module such as a display module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.
  • One embodiment of the present invention is an electronic device including the display module described above and at least one of a housing, a battery, a camera, a speaker, and a microphone.
  • a method for manufacturing a high-definition display device can be provided.
  • a method for manufacturing a high-resolution display device can be provided.
  • a method for manufacturing a large display device can be provided.
  • a highly reliable method for manufacturing a display device can be provided.
  • a method for manufacturing a display device with high yield can be provided.
  • One embodiment of the present invention can provide a high-definition display device.
  • One embodiment of the present invention can provide a high-resolution display device.
  • One embodiment of the present invention can provide a large-sized display device.
  • One embodiment of the present invention can provide a highly reliable display device.
  • FIG. 1A is a top view showing an example of a display device.
  • FIG. 1B is a cross-sectional view showing an example of a display device;
  • 2A to 2E are top views showing an example of the display device.
  • 3A to 3C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 4A to 4C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 5A to 5C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 6A to 6C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 7A to 7C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • FIG. 8A and 8B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 9A to 9C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 10A and 10B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • FIG. 11 is a perspective view showing an example of a display device.
  • FIG. 12A is a cross-sectional view showing an example of a display device.
  • 12B and 12C are cross-sectional views showing examples of transistors.
  • 13A and 13B are perspective views showing an example of a display module.
  • FIG. 14 is a cross-sectional view showing an example of a display device.
  • FIG. 15 is a cross-sectional view showing an example of a display device.
  • FIG. 15 is a cross-sectional view showing an example of a display device.
  • 16 is a cross-sectional view showing an example of a display device.
  • 17A to 17D are diagrams showing configuration examples of light emitting devices.
  • 18A and 18B are diagrams illustrating examples of electronic devices.
  • 19A and 19B are diagrams illustrating examples of electronic devices.
  • 20A and 20B are diagrams illustrating examples of electronic devices.
  • 21A to 21D are diagrams illustrating examples of electronic devices.
  • 22A to 22F are diagrams illustrating examples of electronic devices.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • an island-shaped pixel electrode (which can also be called a lower electrode) is formed, and a first layer (EL layer or EL layer) including a light-emitting layer that emits light of a first color is formed. layer) is formed over the entire surface, a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed over the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask, thereby forming an island-shaped first layer.
  • a second layer (which can be called an EL layer or part of an EL layer) including a light-emitting layer that emits light of a second color is formed as a second sacrificial layer. and an island shape using a second resist mask.
  • the island-shaped EL layer is not formed using a fine metal mask, but is processed after the EL layer is formed over one surface. Therefore, the island-shaped EL layer can be formed with a uniform thickness. Further, by providing a sacrificial layer (which may also be referred to as a mask layer) over the EL layer, damage to the EL layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.
  • a sacrificial layer which may also be referred to as a mask layer
  • the first layer and the second layer each include at least a light-emitting layer, and preferably consist of a plurality of layers. Specifically, it is preferable to have one or more layers on the light-emitting layer.
  • the light-emitting layer can be prevented from being exposed to the outermost surface during the manufacturing process of the display device, and damage to the light-emitting layer can be reduced. This can improve the reliability of the light emitting device.
  • a light-emitting device that emits light of different colors, it is not necessary to separately form all the layers constituting the EL layer, and some of the layers can be formed in the same process.
  • the sacrificial layer is removed, and the remaining layers forming the EL layer are separated from each other.
  • An electrode also referred to as an upper electrode
  • a third resist mask is formed over the counter electrode, and the EL layer and the counter electrode included in the region between the two adjacent light emitting devices are removed using the third resist mask.
  • a third resist mask is used to remove the counter electrode and the layers formed in common for the light-emitting devices of each color (the remaining layers forming the EL layer). ), and further processing the first layer and the second layer (each corresponding to a part of the layers constituting the EL layer) formed in advance in an island shape.
  • overlapping or contact between the EL layers of two adjacent light emitting devices can be suppressed, and the adjacent light emitting devices can be electrically insulated from each other. Therefore, it is possible to suppress current leakage to an adjacent light-emitting device and light emission from a device other than a desired light-emitting device (also referred to as crosstalk).
  • the counter electrode is divided into islands for each light emitting device and configured with a plurality of patterns. Therefore, in a method for manufacturing a display device of one embodiment of the present invention, a conductive layer is provided and electrically connected to an island-shaped counter electrode included in each light-emitting device. Specifically, a protective layer is formed over the counter electrode, a fourth resist mask is formed over the protective layer, the protective layer is processed using the fourth resist mask, and part of the counter electrode is exposed. . In particular, it is preferable that the region of the counter electrode which overlaps with the pixel electrode is exposed. Then, a conductive layer is formed over the counter electrode and the protective layer.
  • the conductive layer has an area larger than that of the counter electrode and functions as an auxiliary wiring.
  • a plurality of counter electrodes can be electrically connected.
  • the conductive layer is preferably formed using a material that transmits visible light.
  • FIG. 1A and 1B show a display device of one embodiment of the present invention.
  • FIG. 1A A top view of the display device 100 is shown in FIG. 1A.
  • the display device 100 has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 outside the display section.
  • One pixel 110 is composed of three sub-pixels 110a, 110b, and 110c.
  • the connection portion 140 can also be called a cathode contact portion.
  • the top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light emitting region.
  • the circuit layout forming the sub-pixels is not limited to the range of the sub-pixels shown in FIG. 1A, and may be arranged outside the sub-pixels.
  • the transistors included in sub-pixel 110a may be located within sub-pixel 110b shown in FIG. 1A, or some or all may be located outside sub-pixel 110a.
  • the sub-pixels 110a, 110b, and 110c have the same or approximately the same aperture ratio (size, which can also be called the size of the light-emitting region), but one embodiment of the present invention is not limited to this.
  • the aperture ratios of the sub-pixels 110a, 110b, and 110c can be determined as appropriate.
  • the sub-pixels 110a, 110b, and 110c may have different aperture ratios, and two or more of them may have the same or substantially the same aperture ratio.
  • FIG. 1A shows an example in which sub-pixels of different colors are arranged side by side in the X direction and sub-pixels of the same color are arranged side by side in the Y direction. Sub-pixels of different colors may be arranged side by side in the Y direction, and sub-pixels of the same color may be arranged side by side in the X direction.
  • FIG. 1A shows an example in which the connection portion 140 is positioned below the display portion in a top view, but the present invention is not particularly limited.
  • the connecting portion 140 may be provided in at least one of the upper side, the right side, the left side, and the lower side of the display portion when viewed from above, and may be provided so as to surround the four sides of the display portion.
  • FIG. 1B shows a cross-sectional view along the dashed-dotted line X1-X2 in FIG. 1A.
  • the display device 100 includes light emitting devices 130a, 130b, and 130c provided on a layer 101 including transistors, and protective layers 131 and 132 provided to cover the side surfaces of these light emitting devices.
  • a conductive layer 134 is provided on the light emitting devices 130 a , 130 b , 130 c and the protective layer 132 .
  • a protective layer 135 is provided over the conductive layer 134 .
  • a substrate 120 is bonded onto the protective layer 135 with a resin layer 119 .
  • a display device of one embodiment of the present invention is a top emission type in which light is emitted in a direction opposite to a substrate over which a light-emitting device is formed, and light is emitted toward a substrate over which a light-emitting device is formed.
  • a bottom emission type bottom emission type
  • a double emission type dual emission type in which light is emitted from both sides may be used.
  • the layer 101 including transistors for example, a stacked-layer structure in which a plurality of transistors are provided over a substrate and an insulating layer is provided to cover the transistors can be applied.
  • a structural example of the layer 101 including a transistor will be described later in Embodiments 2 and 3.
  • FIG. 1 A structural example of the layer 101 including a transistor will be described later in Embodiments 2 and 3.
  • Light emitting devices 130a, 130b, 130c each emit different colors of light.
  • Light-emitting devices 130a, 130b, and 130c are preferably a combination that emits three colors of light, red (R), green (G), and blue (B), for example.
  • a light-emitting device has an EL layer between a pair of electrodes.
  • one of a pair of electrodes may be referred to as a pixel electrode and the other may be referred to as a counter electrode.
  • the light-emitting device 130a includes a pixel electrode 111a on the layer 101 containing the transistor, a first layer 113a on the pixel electrode 111a, a fourth layer 114a on the first layer 113a, and a fourth layer 114a on the fourth layer 114a. and a counter electrode 115a.
  • the first layer 113a and the fourth layer 114a can be collectively called an EL layer.
  • the light-emitting device 130b has a pixel electrode 111b on the layer 101 containing the transistor, a second layer 113b on the pixel electrode 111b, a fourth layer 114b on the second layer 113b, and a fourth layer 114b on the fourth layer 114b. and a counter electrode 115b.
  • the second layer 113b and the fourth layer 114b can be collectively called an EL layer.
  • the light-emitting device 130c has a pixel electrode 111c on the layer 101 containing the transistor, a third layer 113c on the pixel electrode 111c, a fourth layer 114c on the third layer 113c, and a fourth layer 114c on the fourth layer 114c. and a counter electrode 115c.
  • the third layer 113c and the fourth layer 114c can be collectively called an EL layer.
  • the counter electrodes 115a, 115b, and 115c are electrically connected to the conductive layer 134, respectively.
  • the counter electrodes 115 a , 115 b , 115 c are electrically connected to each other through the conductive layer 134 .
  • the conductive layer 134 has an area larger than that of the counter electrodes 115a, 115b, and 115c, and functions as an auxiliary wiring.
  • the conductive layer 134 is electrically connected to the conductive layer provided in the connecting portion 140 . Therefore, the counter electrode of each color light emitting device is electrically connected to the conductive layer provided in the connecting portion 140 . As a result, the same potential is supplied to the opposing electrodes of the light emitting devices of each color.
  • the conductive layer 134 By providing the conductive layer 134 over the entire surface, a plurality of counter electrodes can be electrically connected. As a result, it is possible to prevent the potential distribution of the counter electrode from becoming non-uniform, reduce the luminance unevenness of the display device, and achieve high display quality. Note that in the case where the conductive layer 134 is provided on the side from which light is extracted, the conductive layer 134 is preferably formed using a material that transmits visible light.
  • a conductive film that transmits visible light is used for the electrode from which light is extracted between the pixel electrode and the counter electrode.
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • Metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used as materials for forming the pair of electrodes (the pixel electrode and the counter electrode) of the light-emitting device.
  • indium tin oxide also referred to as In—Sn oxide, ITO
  • In—Si—Sn oxide also referred to as ITSO
  • indium zinc oxide In—Zn oxide
  • In—W— Zn oxides aluminum-containing alloys (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La)
  • Al-Ni-La aluminum-containing alloys
  • Al-Ni-La alloys of silver, palladium and copper
  • APC alloys of silver, palladium and copper
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), europium (Eu), ytterbium
  • Yb rare earth metal
  • an alloy containing an appropriate combination thereof, graphene, or the like can be used.
  • the light-emitting device preferably employs a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting device preferably has an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.
  • microcavity micro-optical resonator
  • the semi-transmissive/semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode (also referred to as a transparent electrode) having transparency to visible light.
  • the light transmittance of the transparent electrode is set to 40% or more.
  • the light-emitting device preferably uses an electrode having a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm).
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the first layer 113a, the second layer 113b, and the third layer 113c each have a light-emitting layer.
  • the first layer 113a, the second layer 113b, and the third layer 113c preferably have light-emitting layers that emit light of different colors.
  • a light-emitting layer is a layer containing a light-emitting substance.
  • the emissive layer can have one or more emissive materials.
  • a substance exhibiting emission colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.
  • fluorescent materials include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.
  • TADF thermally activated delayed fluorescence
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. be done.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, etc. which are used as ligands, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the first layer 113a, the second layer 113b, and the third layer 113c include, as layers other than the light-emitting layer, a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, and an electron layer.
  • a layer containing a highly transportable substance, a highly electron-injecting substance, an electron-blocking material, a bipolar substance (a substance with high electron-transporting and hole-transporting properties), or the like may be further included.
  • Either a low-molecular-weight compound or a high-molecular-weight compound can be used in the light-emitting device, and an inorganic compound may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the first layer 113a, the second layer 113b, and the third layer 113c are respectively a hole-injecting layer, a hole-transporting layer, a hole-blocking layer, an electron-blocking layer, an electron-transporting layer, and an electron layer. It may have one or more of the injection layers.
  • the fourth layers 114a, 114b, 114c can have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.
  • a hole injection layer a hole transport layer
  • a hole blocking layer a hole blocking layer
  • an electron blocking layer a hole blocking layer
  • the hole-injecting layer is a layer that injects holes from the anode to the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. is preferred.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • other highly hole-transporting materials is preferred.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ -electrons including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron-transport property such as a deficient heteroaromatic compound can be used.
  • the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • Examples of the electron injection layer include lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2 -pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenoratritium (abbreviation: LiPPP) , lithium oxide (LiO x ), cesium carbonate, etc., alkali metals, alkaline earth metals, or compounds thereof.
  • Liq lithium, cesium, lithium fluoride
  • CsF cesium fluoride
  • CaF 2 calcium fluoride
  • Liq 8-(quinolinolato)lithium
  • LiPP 2-(2 -pyridyl)phenoratritium
  • an electron-transporting material may be used as the electron injection layer.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) of the organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoelectron spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • protective layers 131, 132 over the light emitting devices 130a, 130b, 130c.
  • the reliability of the light-emitting device can be improved.
  • the conductivity of the protective layers 131, 132, and 135 does not matter. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layers 131, 132, and 135, respectively.
  • the protective layers 131, 132, and 135 have inorganic films to prevent oxidation of the counter electrodes 115a, 115b, and 115c, and to suppress impurities (moisture, oxygen, etc.) from entering the light emitting devices 130a, 130b, and 130c. For example, deterioration of the light-emitting device can be suppressed, and the reliability of the display device can be improved.
  • inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used, for example.
  • oxide insulating film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, a tantalum oxide film, and the like.
  • nitride insulating film examples include a silicon nitride film and an aluminum nitride film.
  • oxynitride insulating film a silicon oxynitride film, an aluminum oxynitride film, or the like can be given.
  • nitride oxide insulating film a silicon nitride oxide film, an aluminum nitride oxide film, or the like can be given.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • Each of the protective layers 131, 132, and 135 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.
  • ITO In--Zn oxide, Ga--Zn oxide, Al--Zn oxide, or indium gallium zinc oxide (In--Ga--Zn oxide, also called IGZO) ) can also be used.
  • the inorganic film preferably has a high resistance, and specifically, preferably has a higher resistance than the counter electrodes 115a, 115b, and 115c.
  • the inorganic film may further contain nitrogen.
  • the protective layers 131, 132, 135 preferably have high visible light transmittance.
  • ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials with high transparency to visible light.
  • the protective layers 131, 132, and 135 for example, a laminated structure of an aluminum oxide film and a silicon nitride film over the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film over the aluminum oxide film. etc. can be used.
  • a laminated structure of an aluminum oxide film and a silicon nitride film over the aluminum oxide film or a laminated structure of an aluminum oxide film and an IGZO film over the aluminum oxide film. etc.
  • impurities water, oxygen, or the like
  • the protective layers 131, 132, 135 may comprise organic films.
  • the protective layer 135 may have both organic and inorganic films.
  • a gap 133 may exist between the protective layer 131 and the protective layer 132 or within the protective layer 132 .
  • voids 133 may be formed.
  • the protective layer 131 is formed using an atomic layer deposition (ALD) method and the protective layer 132 is formed using a sputtering method.
  • ALD atomic layer deposition
  • the voids 133 contain, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and group 18 elements (typically helium, neon, argon, xenon, krypton, etc.).
  • the gap 133 may contain a gas used for forming the protective layer 132, for example.
  • the voids 133 may contain one or more of the Group 18 elements described above. If gas is contained in the gap 133, the gas can be identified by gas chromatography or the like.
  • the film of the protective layer 132 may also contain the gas used for sputtering. In this case, an element such as argon may be detected when the protective layer 132 is analyzed by energy dispersive X-ray analysis (EDX analysis) or the like.
  • EDX analysis energy dispersive X-ray analysis
  • the refractive index of the gap 133 is lower than that of the protective layer 131, the light emitted from the first layer 113a, the second layer 113b, or the third layer 113c passes through the protective layer 131 and the gap 133. is reflected at the interface of Accordingly, light emitted from the first layer 113a, the second layer 113b, or the third layer 113c can be prevented from entering adjacent pixels (or sub-pixels). As a result, it is possible to prevent light of different colors from being mixed, so that the display quality of the display device can be improved.
  • Each end of the pixel electrodes 111 a , 111 b , 111 c is covered with an insulating layer 121 .
  • a light-emitting layer of each color is provided in an island shape for each light-emitting device, and is manufactured by a so-called separate coloring method (SBS (Side By Side) method). Therefore, it is possible to realize a display device with a higher light extraction efficiency than a configuration in which a light emitting device emitting white light and a color filter are combined.
  • SBS System By Side
  • a display device with a lower driving voltage than a structure using a tandem-structure light-emitting device can be realized.
  • a display device with low power consumption can be realized as compared with a structure in which a white light emitting device and a color filter are combined and a structure in which a tandem structure light emitting device is used.
  • the distance between the light-emitting devices can be reduced.
  • the distance between the light emitting devices is 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm.
  • the display device of this embodiment has a gap between the side surface of the first layer 113a and the side surface of the second layer 113b, or a gap between the side surface of the second layer 113b and the side surface of the third layer 113c. It has regions with a spacing of 1 ⁇ m or less, preferably 0.5 ⁇ m (500 nm) or less, and more preferably 100 nm or less.
  • FIGS. 2A to 2E are top views showing the manufacturing method of the display device.
  • 3A to 3C show side by side a cross-sectional view along the dashed line X1-X2 in FIG. 1A and a cross-sectional view along the line Y1-Y2. 4 to 10 are similar to FIG. 3.
  • FIG. 3A to 3C show side by side a cross-sectional view along the dashed line X1-X2 in FIG. 1A and a cross-sectional view along the line Y1-Y2. 4 to 10 are similar to FIG. 3.
  • FIG. 3A to 3C show side by side a cross-sectional view along the dashed line X1-X2 in FIG. 1A and a cross-sectional view along the line Y1-Y2. 4 to 10 are similar to FIG. 3.
  • FIG. 3A to 3C show side by side a cross-sectional view along the dashed line X1-X2 in FIG. 1A and a cross-sectional view along the
  • the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). ) method, ALD method, or the like.
  • CVD methods include a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like. Also, one of the thermal CVD methods is the metal organic CVD (MOCVD) method.
  • thin films that make up the display device can be applied by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, It can be formed by methods such as curtain coating and knife coating.
  • a vacuum process such as a vapor deposition method and a solution process such as a spin coating method or an inkjet method can be used for manufacturing a light-emitting device.
  • vapor deposition methods include physical vapor deposition (PVD) such as sputtering, ion plating, ion beam vapor deposition, molecular beam vapor deposition, and vacuum vapor deposition, and chemical vapor deposition (CVD).
  • the functional layers (hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, etc.) included in the EL layer may be formed by a vapor deposition method (vacuum vapor deposition method, etc.), a coating method (dip coating method, die coat method, bar coat method, spin coat method, spray coat method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexographic (letterpress printing) method, gravure method, or micro contact method, etc.).
  • a vapor deposition method vacuum vapor deposition method, etc.
  • a coating method dip coating method, die coat method, bar coat method, spin coat method, spray coat method, etc.
  • printing method inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexographic (letterpress printing) method, gravure method, or micro contact method, etc.
  • a photolithography method or the like can be used when processing a thin film forming a display device.
  • the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • the photolithography method there are typically the following two methods.
  • One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask.
  • the other is a method of forming a photosensitive thin film, then performing exposure and development to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • An electron beam can also be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
  • a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used for etching the thin film.
  • pixel electrodes 111a, 111b, and 111c and a conductive layer 123 are formed over a layer 101 including transistors. Each pixel electrode is provided in the display portion, and the conductive layer 123 is provided in the connection portion 140 .
  • an insulating layer 121 that covers end portions of the pixel electrodes 111a, 111b, and 111c and end portions of the conductive layer 123 is formed.
  • FIG. 3A shows an example in which the end of the first layer 113A on the connection part 140 side is located inside the end of the first sacrificial layer 118A in the cross-sectional view between Y1 and Y2. Not limited. Edges of the first layer 113A and edges of the first sacrificial layer 118A may be aligned, and the first layer 113A may be provided over the conductive layer 123.
  • the first sacrificial layer 118A and the first layer 113A can be separated from each other.
  • the areas deposited can vary.
  • a light-emitting device is formed using a resist mask.
  • a sputtering method or a vacuum deposition method can be used to form the pixel electrode.
  • the insulating layer 121 can have a single-layer structure or a laminated structure using one or both of an inorganic insulating film and an organic insulating film.
  • organic insulating materials that can be used for the insulating layer 121 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, benzocyclobutene resins, and phenol resins.
  • an inorganic insulating film that can be used for the insulating layer 121 an inorganic insulating film that can be used for the protective layers 131, 132, and 135 can be used.
  • an inorganic insulating film is used as the insulating layer 121 covering the edge of the pixel electrode, impurities are less likely to enter the light-emitting device than when an organic insulating film is used, and the reliability of the light-emitting device can be improved.
  • the step coverage is higher and the shape of the pixel electrode is less likely to affect the step coverage than when an inorganic insulating film is used. Therefore, short-circuiting of the light emitting device can be prevented.
  • the shape of the insulating layer 121 can be processed into a tapered shape or the like.
  • a tapered shape refers to a shape in which at least part of a side surface of a structure is inclined with respect to a substrate surface or a formation surface.
  • a region in which the angle formed by the inclined side surface and the substrate surface also referred to as a taper angle) is less than 90°.
  • the insulating layer 121 may not be provided. By not providing the insulating layer 121, the aperture ratio of the sub-pixel can be increased in some cases. Alternatively, the distance between sub-pixels can be reduced, which may increase the definition or resolution of the display.
  • the first layer 113A is a layer that later becomes the first layer 113a. Therefore, the configuration applicable to the first layer 113a described above can be applied to the first layer 113A.
  • the layers constituting the first layer 113A can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method. Also, the layers forming the first layer 113A may be formed using a premix material.
  • the first layer 113A and the second layer 113B and the third layer 113C formed in a later step are films having high resistance to processing conditions.
  • a film with a high selection ratio of is used.
  • the first sacrificial layer 118A may have a single layer structure or a laminated structure.
  • first sacrificial layer 118A For example, sputtering, ALD (including thermal ALD and PEALD), or vacuum deposition can be used to form the first sacrificial layer 118A.
  • ALD including thermal ALD and PEALD
  • vacuum deposition can be used to form the first sacrificial layer 118A.
  • a formation method that causes less damage to the EL layer is preferable, and the first sacrificial layer 118A is preferably formed by an ALD method or a vacuum evaporation method rather than a sputtering method.
  • a film that can be removed by a wet etching method is preferably used for the first sacrificial layer 118A.
  • damage to the first layer 113A during processing of the first sacrificial layer 118A can be reduced as compared with the case of using the dry etching method.
  • each layer (the first layer to the fourth layer, etc.) forming the EL layer is difficult to process, and the EL layer is formed.
  • an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or An alloy material containing the metal material can be used.
  • a metal oxide such as an In--Ga--Zn oxide can be used for the first sacrificial layer 118A.
  • an In--Ga--Zn oxide film can be formed using a sputtering method.
  • indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide ( In--Ti--Zn oxide), indium gallium tin-zinc oxide (In--Ga--Sn--Zn oxide), or the like can be used.
  • indium tin oxide containing silicon or the like can be used.
  • element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium
  • M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium
  • Various inorganic insulating films that can be used for the protective layers 131, 132, and 135 can be used as the first sacrificial layer 118A.
  • an oxide insulating film is preferable because it has higher adhesion to the first layer 113A than a nitride insulating film.
  • an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide can be used for the first sacrificial layer 118A.
  • an aluminum oxide film can be formed using the ALD method. Use of the ALD method is preferable because damage to the base (especially the EL layer or the like) can be reduced.
  • the first sacrificial layer 118A an In--Ga--Zn oxide film formed by a sputtering method and an aluminum oxide film formed over the In--Ga--Zn oxide film by an ALD method are used. Laminated structures can be applied. Further, as the first sacrificial layer 118A, a stacked structure of an aluminum oxide film formed by ALD and an In--Ga--Zn oxide film formed over the aluminum oxide film by sputtering is used. be able to. Further, as the first sacrificial layer 118A, a single-layer structure of an aluminum oxide film formed by ALD can be applied.
  • a resist mask 190a is formed on the first sacrificial layer 118A.
  • a resist mask can be formed by applying a photosensitive resin (photoresist), followed by exposure and development.
  • the resist mask 190a is provided at a position overlapping with the pixel electrode 111a.
  • the resist mask 190a preferably does not overlap with the pixel electrodes 111b and 111c.
  • the resist mask 190a overlaps with the pixel electrodes 111b and 111c, it is preferable to interpose the insulating layer 121 therebetween.
  • the resist mask 190 a is preferably provided also at a position overlapping with the conductive layer 123 . Accordingly, the conductive layer 123 can be prevented from being damaged during the manufacturing process of the display device.
  • one island pattern is provided as the resist mask 190a for one sub-pixel 110a.
  • one belt-like pattern may be formed for a plurality of sub-pixels 110a arranged in a row (in the Y direction in FIG. 2A).
  • a resist mask 190a is used to remove part of the first layer 113A and part of the first sacrificial layer 118A.
  • regions of the first layer 113A and the first sacrificial layer 118A that do not overlap with the resist mask 190a can be removed. Therefore, the pixel electrodes 111b and 111c and the conductive layer 123 are exposed.
  • a layered structure of the first layer 113a, the first sacrificial layer 118a, and the resist mask 190a remains over the pixel electrode 111a. After that, the resist mask 190a is removed.
  • the first sacrificial layer 118A can be processed by a wet etching method or a dry etching method.
  • the processing of the first sacrificial layer 118A is preferably performed by anisotropic etching.
  • a wet etching method By using the wet etching method, damage to the first layer 113A during processing of the first sacrificial layer 118A can be reduced as compared with the case of using the dry etching method.
  • a wet etching method for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a chemical solution using a mixed liquid thereof can be used. preferable.
  • TMAH tetramethylammonium hydroxide
  • deterioration of the first layer 113A can be suppressed by not using an oxygen-containing gas as an etching gas.
  • a gas containing a noble gas such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or He is used for etching. Gases are preferred.
  • FIG. 3C shows an example in which the first sacrificial layer 118A and the first layer 113A are processed with the resist mask 190a left, but the present invention is not limited to this.
  • the first sacrificial layer 118A has a stacked structure
  • part of the layers are processed using the resist mask 190a
  • the resist mask 190a is removed, and then the part of the layers is used as a hard mask to remove the remaining layers. layer may be processed.
  • the resist mask 190a is removed by ashing using oxygen plasma or the like.
  • the first layer 113A may be damaged in the step of removing the resist mask 190a. can be suppressed.
  • the remaining layers of the first sacrificial layer 118A and the first layer 113A can be processed.
  • the processing of the first layer 113A is preferably performed by anisotropic etching.
  • Anisotropic dry etching is particularly preferred.
  • As an etching gas a gas containing nitrogen, a gas containing hydrogen, a gas containing noble gas, a gas containing nitrogen and argon, a gas containing nitrogen and hydrogen, or the like is preferably used. By not using a gas containing oxygen as the etching gas, deterioration of the first layer 113A can be suppressed.
  • a gas containing oxygen may be used as the etching gas.
  • the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. Therefore, damage to the first layer 113A can be suppressed. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.
  • a second layer 113B is formed on the first sacrificial layer 118a, the pixel electrodes 111b and 111c, and the insulating layer 121, and the second layer 113B, the insulating layer 121, Then, a second sacrificial layer 118 B is formed over the conductive layer 123 .
  • FIG. 4A shows an example in which the end of the second layer 113B on the connection part 140 side is located inside the end of the second sacrificial layer 118B in the cross-sectional view between Y1 and Y2. Not limited. An end portion of the second layer 113B and an end portion of the second sacrificial layer 118B may be aligned, and the second layer 113B may be provided over the conductive layer 123 .
  • the second layer 113B is a layer that later becomes the second layer 113b.
  • the second layer 113b emits light of a different color than the first layer 113a.
  • the structure, materials, and the like that can be applied to the second layer 113b are the same as those of the first layer 113a.
  • the second layer 113B can be deposited using a method similar to that of the first layer 113A.
  • the second sacrificial layer 118B can be formed using a material applicable to the first sacrificial layer 118A.
  • a resist mask 190b is formed on the second sacrificial layer 118B.
  • the resist mask 190b is provided at a position overlapping with the pixel electrode 111b.
  • the resist mask 190b may overlap with the first layer 113a over the insulating layer 121 .
  • an end portion of the first layer 113a and an end portion of the second layer 113b formed using the resist mask 190b overlap.
  • the method for manufacturing the display device of this embodiment mode further includes a step of processing the first layer 113a and the second layer 113b (a processing step using a resist mask 190d described later).
  • the resist mask 190b preferably does not overlap with the first layer 113a, the pixel electrodes 111a and 111c, and the conductive layer 123 unless the insulating layer 121 is interposed therebetween.
  • the resist mask 190b overlaps with the pixel electrodes 111a and 111c or the conductive layer 123, the insulating layer 121 is preferably interposed therebetween.
  • one island pattern is provided as the resist mask 190b for one sub-pixel 110b.
  • one belt-like pattern may be formed for a plurality of sub-pixels 110b arranged in a line.
  • the second sacrificial layer 118B can be processed using a method applicable to processing the first sacrificial layer 118A.
  • the second layer 113B can be processed using a method applicable to processing the first layer 113A.
  • the resist mask 190b can be removed by a method and timing applicable to removing the resist mask 190a.
  • a third layer 113C is formed on the first sacrificial layer 118a, the second sacrificial layer 118b, the pixel electrode 111c, and the insulating layer 121, and the third layer 113C is formed.
  • FIG. 5A shows an example in which the end of the third layer 113C on the side of the connecting portion 140 is located inside the end of the third sacrificial layer 118C in the cross-sectional view between Y1 and Y2. Not limited.
  • An end portion of the third layer 113C and an end portion of the third sacrificial layer 118C may be aligned, and the third layer 113C may be provided over the conductive layer 123 .
  • the third layer 113C is a layer that later becomes the third layer 113c.
  • the third layer 113c emits light of a different color than the first layer 113a and the second layer 113b.
  • the structure, materials, and the like that can be applied to the third layer 113c are the same as those of the first layer 113a.
  • the third layer 113C can be deposited using a method similar to that of the first layer 113A.
  • the third sacrificial layer 118C can be formed using a material applicable to the first sacrificial layer 118A.
  • a resist mask 190c is formed on the third sacrificial layer 118C.
  • the resist mask 190c is provided at a position overlapping with the pixel electrode 111c.
  • the resist mask 190 c may overlap with at least one of the first layer 113 a and the second layer 113 b over the insulating layer 121 . In this case, the end portion of the first layer 113a or the end portion of the second layer 113b overlaps with the end portion of the third layer 113c formed using the resist mask 190c.
  • the method for manufacturing the display device of this embodiment mode further includes a step of processing the first layer 113a, the second layer 113b, and the third layer 113c (using a resist mask 190d described later). process). Therefore, overlapping or contact between the first layer 113a or the second layer 113b and the third layer 113c is suppressed, and adjacent light-emitting devices that emit light of different colors are electrically connected to each other. Can be insulated.
  • the resist mask 190c preferably does not overlap with the first layer 113a, the second layer 113b, the pixel electrodes 111a and 111b, and the conductive layer 123 unless the insulating layer 121 is interposed therebetween. When the resist mask 190c overlaps with the pixel electrodes 111a and 111b or the conductive layer 123, the insulating layer 121 is preferably interposed therebetween.
  • one island pattern is provided as a resist mask 190c for one sub-pixel 110c.
  • the resist mask 190c one belt-like pattern may be formed for a plurality of sub-pixels 110c arranged in a row.
  • a resist mask 190c is used to remove part of the third layer 113C and part of the third sacrificial layer 118C.
  • regions of the third layer 113C and the third sacrificial layer 118C that do not overlap with the resist mask 190c can be removed. Therefore, the first sacrificial layer 118a, the second sacrificial layer 118b, and the conductive layer 123 are exposed.
  • a layered structure of the third layer 113c, the third sacrificial layer 118c, and the resist mask 190c remains over the pixel electrode 111c. After that, the resist mask 190c is removed.
  • the third sacrificial layer 118C can be processed using a method applicable to processing the first sacrificial layer 118A.
  • the third layer 113C can be processed using a method applicable to processing the first layer 113A.
  • the resist mask 190c can be removed by a method and timing applicable to removing the resist mask 190a.
  • the first sacrificial layer 118a, the second sacrificial layer 118b, and the third sacrificial layer 118c are removed.
  • the first layer 113a over the pixel electrode 111a, the second layer 113b over the pixel electrode 111b, the third layer 113c over the pixel electrode 111c, and the conductive layer 123 are exposed.
  • the same method as in the sacrificial layer processing step can be used.
  • the wet etching method compared with the case of using the dry etching method, when removing the first sacrificial layer 118a, the second sacrificial layer 118b, and the third sacrificial layer 118c, the first The damage applied to the layer 113a, the second layer 113b, and the third layer 113c can be reduced.
  • a fourth layer 114 is formed to cover the first layer 113a, the second layer 113b, the third layer 113c, and the insulating layer 121.
  • a counter electrode 115 is formed over layer 114 , insulating layer 121 , and conductive layer 123 .
  • FIG. 6B shows an example in which the end of the fourth layer 114 on the connection part 140 side is located inside the end of the counter electrode 115 in the cross-sectional view between Y1 and Y2, but the present invention is limited to this. not.
  • the edge of the fourth layer 114 and the edge of the counter electrode 115 may be aligned, and the fourth layer 114 may be provided on the conductive layer 123 as shown in FIG. 6C.
  • the fourth layer 114 is a layer that later becomes the fourth layers 114a, 114b, and 114c. Therefore, the configuration applicable to the fourth layers 114 a , 114 b , and 114 c described above can be applied to the fourth layer 114 .
  • the layers constituting the fourth layer 114 can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet, and coating. Also, the layers constituting the fourth layer 114 may be formed using a premix material.
  • Materials that can be used for the counter electrode 115 are as described above. Sputtering or vacuum deposition, for example, can be used to form the counter electrode 115 .
  • a resist mask 190d is formed on the counter electrode 115. Then, as shown in FIG. 7A, a resist mask 190d is formed on the counter electrode 115. Then, as shown in FIG. 7A, a resist mask 190d is formed on the counter electrode 115. Then, as shown in FIG. 7A, a resist mask 190d is formed on the counter electrode 115.
  • the resist mask 190d is provided at a position overlapping with at least the pixel electrodes 111a, 111b, and 111c.
  • the resist mask 190d is applied to a region between the pixel electrode 111a and the pixel electrode 111b, a region between the pixel electrode 111b and the pixel electrode 111c, and a region between the pixel electrode 111a and the pixel electrode 111c when viewed from above. is preferably not provided.
  • FIG. 7A is an example of a process following FIG. 6B.
  • a resist mask 190d is provided at a position overlapping with the conductive layer 123.
  • the resist mask 190d is preferably provided with one island pattern for one sub-pixel. It can be said that the top surface shape of the resist mask 190d corresponds to the top surface shape of the light emitting region of the sub-pixel. Further, as shown in FIG. 2D, the top surface shape of the resist mask 190d can be said to correspond to the top surface shape of the counter electrode provided in the connecting portion 140. As shown in FIG.
  • a resist mask 190d is used to partially remove the fourth layer 114 and the counter electrode 115. Then, as shown in FIG. Thereby, the fourth layer 114 and the counter electrode 115 included in the region between the two adjacent light emitting devices can be removed.
  • a layered structure of the first layer 113a, the fourth layer 114a, the counter electrode 115a, and the resist mask 190d remains over the pixel electrode 111a.
  • a stacked structure of the second layer 113b, the fourth layer 114b, the counter electrode 115b, and the resist mask 190d remains over the pixel electrode 111b, and the third layer 113c and the third layer remain over the pixel electrode 111c.
  • the top surface shape of the conductive layer 115d corresponds to the top surface shape of the resist mask 190d provided in the connection portion 140 shown in FIG. 2D.
  • the counter electrode 115 can be processed by a wet etching method or a dry etching method.
  • the processing of the counter electrode 115 is preferably performed by anisotropic etching.
  • the fourth layer 114 can be processed using methods applicable to processing the first layer 113A.
  • part of the first layer 113a, part of the second layer 113b, and part of the third layer 113c located over the insulating layer 121 are also removed.
  • two of the first layer 113a, the second layer 113b, and the third layer 113c have overlapping portions or contacting portions on the insulating layer 121, removing the portions
  • Light emitting devices that emit different colors of light can be electrically isolated from each other. Therefore, crosstalk can be suppressed.
  • FIGS. 8A and 8B will be described as steps following FIG. 6C.
  • the resist mask 190 d does not have to be provided at a position overlapping with the conductive layer 123 . 8A, the resist mask 190d is not provided at a position overlapping with the conductive layer 123. In FIG.
  • FIG. 8B using a resist mask 190d, part of the fourth layer 114 and the counter electrode 115 is removed.
  • the structure shown in FIG. 8B differs from the structure shown in FIG. 7B in that the counter electrode does not remain on the conductive layer 123 .
  • conductive layer 123 is exposed.
  • the connecting portion 140 may not be provided with the counter electrode.
  • 7A and 7B may be performed as a step subsequent to FIG. 6C. In other words, the fourth layer 114 and the conductive layer 115d may remain in the connection portion 140 in some cases.
  • the fourth layer 114 is provided because the thickness of the fourth layer 114 is extremely thin, the conductivity of the fourth layer 114 is high, or the area of the connection portion 140 is large. Even if the conductive layer 123 , the conductive layer 115 d , and the conductive layer 134 are electrically connected in the connection portion 140 , the electrical connection is not affected in some cases. In such a case, the fourth layer 114 may remain over the conductive layer 123 .
  • the resist mask 190d is removed.
  • the resist mask 190d may be removed after the counter electrode 115 is processed.
  • the fourth layer 114 can be processed using the counter electrodes 115a, 115b, and 115c as hard masks.
  • a protective layer 131 is formed on the counter electrodes 115a, 115b, 115c, the conductive layer 115d, and the insulating layer 121, and a protective layer 132 is formed on the protective layer 131. As shown in FIG. 9A, a protective layer 131 is formed on the counter electrodes 115a, 115b, 115c, the conductive layer 115d, and the insulating layer 121, and a protective layer 132 is formed on the protective layer 131. As shown in FIG.
  • the protective layers 131 and 132 are as described above. Methods for forming the protective layers 131 and 132 include a vacuum deposition method, a sputtering method, a CVD method, an ALD method, and the like.
  • the protective layer 131 and the protective layer 132 may be films formed using different film formation methods.
  • each of the protective layers 131 and 132 may have a single-layer structure or a laminated structure.
  • the gap 133 is formed by forming the protective layers 131 and 132 is shown, but the gap 133 may not be formed.
  • the space between the adjacent light emitting devices is filled with the protective layer 132 .
  • 9A and the like show the void surrounded by the protective layer 132, the void surrounded by the protective layer 131 and the protective layer 132, the void surrounded by the insulating layer 121 and the protective layer 131, and the insulating layer 121 and the protective layer 132, or a gap surrounded by the insulating layer 121, the protective layer 131, and the protective layer 132 may be formed.
  • FIG. 9A and the like show the void surrounded by the protective layer 132, the void surrounded by the protective layer 131 and the protective layer 132, the void surrounded by the insulating layer 121 and the protective layer 131, and the insulating layer 121 and the protective layer 132, or a gap surrounded by the insulating layer 121, the protective layer 131, and the protective
  • a resist mask 190e is formed on the protective layer 132. Then, as shown in FIG. 9B, a resist mask 190e is formed on the protective layer 132. Then, as shown in FIG. 9B, a resist mask 190e is formed on the protective layer 132. Then, as shown in FIG. 9B, a resist mask 190e is formed on the protective layer 132. Then, as shown in FIG. 9B, a resist mask 190e is formed on the protective layer 132.
  • the resist mask 190 e is provided at a position overlapping with at least the insulating layer 121 .
  • the resist mask 190 e has openings in regions overlapping with the pixel electrodes 111 a, 111 b, and 111 c and the conductive layer 123 .
  • the resist mask 190e preferably has an opening overlapping the sub-pixel 110a, an opening overlapping the sub-pixel 110b, an opening overlapping the sub-pixel 110c, and an opening overlapping the connection portion 140.
  • a portion of the protective layer 131 and a portion of the protective layer 132 are removed using a resist mask 190e.
  • regions of the protective layers 131 and 132 that do not overlap with the resist mask 190e can be removed. Therefore, the counter electrodes 115a, 115b, 115c and the conductive layer 115d are exposed.
  • the resist mask 190e is removed.
  • the resist mask 190e may be removed after the protective layer 132 is processed.
  • the protective layer 131 can be processed using the protective layer 132 as a hard mask.
  • a conductive layer 134 is formed over the counter electrodes 115a, 115b, and 115c, the conductive layer 115d, and the protective layer 132. Then, as shown in FIG. 10B, a conductive layer 134 is formed over the counter electrodes 115a, 115b, and 115c, the conductive layer 115d, and the protective layer 132. Then, as shown in FIG. 10B, a conductive layer 134 is formed over the counter electrodes 115a, 115b, and 115c, the conductive layer 115d, and the protective layer 132. Then, as shown in FIG.
  • the conductive layer 134 has an area larger than that of the counter electrode and functions as an auxiliary wiring.
  • the counter electrodes 115a, 115b, and 115c and the conductive layer 115d can be electrically connected.
  • the conductive layer 123, the conductive layer 115d, and the conductive layer 134 are electrically connected to each other.
  • the same potential is supplied to the opposing electrodes of the light emitting devices of each color. Therefore, it is possible to prevent the potential distribution of the counter electrode from becoming non-uniform due to the light emitting device, reduce the luminance unevenness of the display device, and realize high display quality.
  • the conductive layer 134 can be formed using a material applicable to the pixel electrode and the counter electrode. Note that in the case where the conductive layer 134 is provided on the side from which light is extracted in the display device, the conductive layer 134 is preferably formed using a material that transmits visible light.
  • a protective layer 135 is preferably formed over the conductive layer 134 .
  • the material and deposition method that can be used for the protective layer 135 are the same as those for the protective layers 131 and 132 .
  • the display device 100 shown in FIG. 1B can be manufactured.
  • the island-shaped EL layer is not formed using a fine metal mask, but is formed by forming an EL layer over one surface and then processing the EL layer. Therefore, the island-shaped EL layer can be formed with a uniform thickness.
  • each EL layer can be manufactured with a configuration (material, film thickness, etc.) suitable for each color light-emitting device. Thereby, a light-emitting device with good characteristics can be produced.
  • the display device of this embodiment mode has a structure in which overlapping or contact between the first layer, the second layer, and the third layer, which constitute the light-emitting device of each color, is suppressed. Therefore, crosstalk is suppressed, and a high-definition or high-resolution display device with high display quality can be realized.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment includes a relatively large screen such as a television device, a desktop or notebook personal computer, a computer monitor, a digital signage, a large game machine such as a pachinko machine, or the like. In addition to electronic devices, it can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.
  • FIG. 11 shows a perspective view of the display device 100A
  • FIG. 12A shows a cross-sectional view of the display device 100A.
  • the display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together.
  • the substrate 152 is clearly indicated by dashed lines.
  • the display device 100A includes a display portion 162, a circuit 164, wirings 165, and the like.
  • FIG. 11 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in FIG. 11 can also be called a display module including the display device 100A, an IC (integrated circuit), and an FPC.
  • a scanning line driver circuit can be used.
  • the wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164 .
  • the signal and power are input to the wiring 165 from the outside through the FPC 172 or input to the wiring 165 from the IC 173 .
  • FIG. 11 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.
  • a COG Chip On Glass
  • COF Chip On Film
  • the IC 173 for example, an IC having a scanning line driver circuit or a signal line driver circuit can be applied.
  • the display device 100A and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 12A shows an example of a cross-section of the display device 100A when part of the region including the FPC 172, part of the circuit 164, part of the display section 162, and part of the region including the end are cut. show.
  • the display device 100A illustrated in FIG. 12A includes a transistor 201 and a transistor 205, a light-emitting device 130a that emits red light, a light-emitting device 130b that emits green light, and a light-emitting device 130b that emits blue light. It has a device 130c and the like.
  • the three sub-pixels include sub-pixels of three colors of R, G, and B, yellow ( Y), cyan (C), and magenta (M) sub-pixels.
  • the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y four-color sub-pixels. be done.
  • the protective layer 135 and the substrate 152 are adhered via the adhesive layer 142 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to sealing the light-emitting device.
  • the space between substrates 152 and 151 is filled with an adhesive layer 142 to apply a solid sealing structure.
  • the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 142 may be provided so as not to overlap the light emitting device.
  • the space may be filled with a resin different from the adhesive layer 142 provided in a frame shape.
  • Each of the light emitting devices 130a, 130b, 130c has the same structure as the stacked structure shown in FIG. 1B, except that it has an optical adjustment layer between the pixel electrode and the EL layer.
  • Light-emitting device 130a has an optical tuning layer 126a
  • light-emitting device 130b has an optical tuning layer 126b
  • light-emitting device 130c has an optical tuning layer 126c.
  • Embodiment 1 can be referred to for details of the light-emitting device.
  • the ends of the light emitting devices 130a, 130b, 130c are covered with protective layers 131, 132, respectively.
  • the light emitting devices 130a, 130b, 130c and the conductive layer 134 provided on the protective layer 132 are electrically connected to the counter electrodes 115a, 115b, 115c. Since the conductive layer 134 is provided on the side from which light is extracted, it is formed using a material having high visible light transmittance. A protective layer 135 is provided over the conductive layer 134 .
  • FIG. 12A shows an example in which the optical adjustment layer 126a is thicker than the optical adjustment layer 126b, and the optical adjustment layer 126b is thicker than the optical adjustment layer 126c.
  • the thickness of each optical adjustment layer the thickness of the optical adjustment layer 126a is set so as to strengthen red light
  • the thickness of the optical adjustment layer 126b is set so as to strengthen green light
  • the thickness of blue light is set. It is preferable to set the film thickness of the optical adjustment layer 126c as follows. Thereby, a microcavity structure can be realized, and the color purity of light emitted from each light emitting device can be enhanced.
  • the optical adjustment layer is preferably formed using a conductive material that is transparent to visible light, among conductive materials that can be used as electrodes of light-emitting devices.
  • the pixel electrodes 111a, 111b, and 111c are connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layer 214, respectively.
  • the pixel electrode contains a material that reflects visible light
  • the counter electrode contains a material that transmits visible light
  • Light emitted by the light emitting device is emitted to the substrate 152 side.
  • a material having high visible light transmittance is preferably used for the substrate 152 .
  • a stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.
  • FIG. 1 A stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.
  • Both the transistor 201 and the transistor 205 are formed over the substrate 151 . These transistors can be made with the same material and the same process.
  • An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 214 are provided in this order over the substrate 151 .
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided over the transistor.
  • An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
  • a material into which impurities such as water and hydrogen are difficult to diffuse is preferably used for at least one insulating layer that covers the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • An inorganic insulating film is preferably used for each of the insulating layers 211 , 213 , and 215 .
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the insulating films described above may be laminated and used.
  • the organic insulating film preferably has openings near the ends of the display device 100A. As a result, it is possible to prevent impurities from entering through the organic insulating film from the end portion of the display device 100A.
  • the organic insulating film may be formed so that the edges of the organic insulating film are located inside the edges of the display device 100A so that the organic insulating film is not exposed at the edges of the display device 100A.
  • An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer.
  • materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • An opening is formed in the insulating layer 214 in a region 228 shown in FIG. 12A.
  • the transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as a source and a drain, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • crystallinity of a semiconductor material used for a transistor there is no particular limitation on the crystallinity of a semiconductor material used for a transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having a crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystal region in part) can be used. semiconductor) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
  • the semiconductor layer includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
  • the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
  • the transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
  • the transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i.
  • an insulating layer 218 may be provided to cover the transistor.
  • the transistor 209 illustrated in FIG. 12B illustrates an example in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231 .
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 12C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low resistance region 231n through openings in the insulating layer 215, respectively.
  • a connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap.
  • the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242 .
  • the conductive layer 166 has a laminated structure of a conductive film obtained by processing the same conductive film as the pixel electrode and a conductive film obtained by processing the same conductive film as the optical adjustment layer 126c. show.
  • the conductive layer 166 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 242 .
  • a light shielding layer 117 is preferably provided on the surface of the substrate 152 on the substrate 151 side.
  • various optical members can be arranged outside the substrate 152 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged on the outside of the substrate 152.
  • an antistatic film that suppresses adhesion of dust
  • a water-repellent film that prevents adhesion of dirt
  • a hard coat film that suppresses the occurrence of scratches due to use
  • a shock absorption layer, etc. are arranged.
  • the protective layers 131 and 132 that cover the side surfaces of the light-emitting device and the protective layer 135 that covers the light-emitting device By providing the protective layers 131 and 132 that cover the side surfaces of the light-emitting device and the protective layer 135 that covers the light-emitting device, impurities such as water are prevented from entering the light-emitting device and the reliability of the light-emitting device is improved. can be done.
  • the insulating layer 215 and the protective layer 131, 132, or 135 are in contact with each other through the opening of the insulating layer 214 in the region 228 near the edge of the display device 100A.
  • the inorganic insulating films are in contact with each other. This can prevent impurities from entering the display section 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100A can be improved.
  • Glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like can be used for the substrates 151 and 152, respectively.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting device is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 151 or the substrate 152 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyether resins are used, respectively.
  • PES resin Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
  • PES polyamide resin
  • aramid polysiloxane resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE resin polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 151 and 152 may be made of glass having a thickness sufficient to be flexible.
  • a substrate having high optical isotropy is preferably used as the substrate of the display device.
  • a substrate with high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • the film when a film is used as the substrate, the film may absorb water, which may cause a change in shape such as wrinkling of the display panel. Therefore, it is preferable to use a film having a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of a silver-magnesium alloy and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting devices.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • the display device of this embodiment can be a high-definition display device. Therefore, the display device of the present embodiment includes, for example, information terminals (wearable devices) such as a wristwatch type and a bracelet type, devices for VR such as a head-mounted display, devices for AR such as glasses, and the like. It can be used for the display part of wearable equipment.
  • information terminals wearable devices
  • VR such as a head-mounted display
  • AR such as glasses
  • Display module A perspective view of the display module 280 is shown in FIG. 13A.
  • the display module 280 has a display device 100B and an FPC 290 .
  • the display device included in the display module 280 is not limited to the display device 100B, and may be a display device 100C or a display device 100D, which will be described later.
  • the display module 280 has substrates 291 and 292 .
  • the display module 280 has a display section 281 .
  • the display unit 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in the pixel unit 284, which will be described later, can be visually recognized.
  • FIG. 13B shows a perspective view schematically showing the configuration on the substrate 291 side.
  • a circuit section 282 , a pixel circuit section 283 on the circuit section 282 , and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291 .
  • a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284 .
  • the terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.
  • the pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of FIG. 13B. Pixel 284a has light-emitting devices 130a, 130b, and 130c that emit light of different colors. A plurality of light emitting devices can be arranged in a stripe arrangement as shown in FIG. 13B. In addition, various light emitting device arrangement methods such as delta arrangement or pentile arrangement can be applied.
  • the pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.
  • One pixel circuit 283a is a circuit that controls light emission of three light emitting devices included in one pixel 284a.
  • One pixel circuit 283a may have a structure in which three circuits for controlling light emission of one light emitting device are provided.
  • the pixel circuit 283a can have at least one selection transistor, one current control transistor (driving transistor), and a capacitive element for each light emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain of the selection transistor. This realizes an active matrix display device.
  • the circuit section 282 has a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 .
  • a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 For example, it is preferable to have one or both of a gate line driver circuit and a source line driver circuit.
  • at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.
  • the FPC 290 functions as wiring for supplying a video signal, power supply potential, or the like to the circuit section 282 from the outside. Also, an IC may be mounted on the FPC 290 .
  • the aperture ratio (effective display area ratio) of the display portion 281 is can be very high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less.
  • the pixels 284a can be arranged at an extremely high density, and the definition of the display portion 281 can be extremely high.
  • pixels 284a may be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less. preferable.
  • a display module 280 Since such a display module 280 has extremely high definition, it can be suitably used for equipment for VR such as a head-mounted display, or equipment for glasses-type AR. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display portion 281, so pixels cannot be viewed even if the display portion is enlarged with the lens. , a highly immersive display can be performed. Moreover, the display module 280 is not limited to this, and can be suitably used for electronic equipment having a relatively small display unit. For example, it can be suitably used for a display part of a wearable electronic device such as a wristwatch.
  • Display device 100B A display device 100B illustrated in FIG.
  • Substrate 301 corresponds to substrate 291 in FIGS. 13A and 13B.
  • a stacked structure from the substrate 301 to the insulating layer 255 corresponds to the layer 101 including the transistor in Embodiment 1.
  • FIG. 1
  • a transistor 310 has a channel formation region in the substrate 301 .
  • the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
  • Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
  • the conductive layer 311 functions as a gate electrode.
  • An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
  • a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
  • An insulating layer 261 is provided to cover the transistor 310 and a capacitor 240 is provided over the insulating layer 261 .
  • the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as the dielectric of the capacitor 240 .
  • the conductive layer 241 is provided over the insulating layer 261 and embedded in the insulating layer 254 .
  • Conductive layer 241 is electrically connected to one of the source or drain of transistor 310 by plug 271 embedded in insulating layer 261 .
  • An insulating layer 243 is provided over the conductive layer 241 .
  • the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
  • FIG. 1B shows an example in which light-emitting devices 130a, 130b, and 130c have a structure similar to the laminated structure shown in FIG. 1B.
  • Protective layers 131 and 132 are also provided to cover the side surfaces of the light emitting devices 130a, 130b and 130c.
  • a conductive layer 134 is provided on the light emitting devices 130 a , 130 b , 130 c and the protective layer 132 .
  • the conductive layer 134 is electrically connected to counter electrodes (counter electrodes 115a, 115b, 115c) of each light emitting device, and has a function of electrically connecting these counter electrodes to each other.
  • a protective layer 135 is provided over the conductive layer 134 to cover the light emitting devices 130a, 130b, 130c.
  • a substrate 120 is bonded onto the protective layer 135 with a resin layer 119 .
  • a gap 133 is provided between the protective layer 131 and the protective layer 132 .
  • Embodiment 1 can be referred to for details of the components from the light emitting device to the substrate 120 .
  • Substrate 120 corresponds to substrate 292 in FIG. 13A.
  • the pixel electrode of the light emitting device is electrically connected to one of the source or drain of transistor 310 by plug 256 embedded in insulating layer 255 , conductive layer 241 embedded in insulating layer 254 , and plug 271 embedded in insulating layer 261 . properly connected.
  • Display device 100C A display device 100C shown in FIG. 15 is mainly different from the display device 100B in that the transistor configuration is different. Note that the description of the same parts as those of the display device 100B may be omitted.
  • the transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • OS transistor a transistor in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • the transistor 320 has a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • the substrate 331 corresponds to the substrate 291 in FIGS. 13A and 13B.
  • a stacked structure from the substrate 331 to the insulating layer 255 corresponds to the layer 101 including the transistor in Embodiment 1.
  • An insulating layer 332 is provided over the substrate 331 .
  • the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
  • a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
  • a conductive layer 327 is provided over the insulating layer 332 and an insulating layer 326 is provided to cover the conductive layer 327 .
  • the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
  • An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
  • the upper surface of the insulating layer 326 is preferably planarized.
  • the semiconductor layer 321 is provided over the insulating layer 326 .
  • the semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor characteristics. Details of materials that can be suitably used for the semiconductor layer 321 will be described later.
  • a pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.
  • An insulating layer 328 is provided to cover the top surface and side surfaces of the pair of conductive layers 325 , the side surface of the semiconductor layer 321 , and the like, and the insulating layer 264 is provided over the insulating layer 328 .
  • the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
  • an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
  • An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
  • the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • the top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are substantially the same, and the insulating layers 329 and 265 are provided to cover them. .
  • the insulating layers 264 and 265 function as interlayer insulating layers.
  • the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
  • an insulating film similar to the insulating layers 328 and 332 can be used.
  • a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 , and 264 .
  • the plug 274 includes a conductive layer 274a that covers the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
  • the configuration from the insulating layer 254 to the substrate 120 in the display device 100C is similar to that of the display device 100B.
  • a display device 100D illustrated in FIG. 16 has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked. Note that descriptions of portions similar to those of the display devices 100B and 100C may be omitted.
  • An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
  • the conductive layers 251 and 252 each function as wirings.
  • An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
  • An insulating layer 265 is provided to cover the transistor 320 and a capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
  • the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
  • the light emitting device shown in FIG. 17A has an electrode 772, an EL layer 786 and an electrode 788.
  • FIG. One of electrode 772 and electrode 788 functions as an anode and the other functions as a cathode.
  • One of the electrodes 772 and 788 functions as a pixel electrode and the other functions as a common electrode. Further, it is preferable that the electrode on the side from which light is extracted out of the electrodes 772 and 788 has a property of transmitting visible light, and the other electrode reflects visible light.
  • the EL layer 786 of the light-emitting device can be composed of multiple layers such as layer 4420, light-emitting layer 4411, and layer 4430, as shown in FIG. 17A.
  • the layer 4420 can have, for example, a layer containing a substance with high electron-injection properties (electron-injection layer) and a layer containing a substance with high electron-transport properties (electron-transporting layer).
  • the light-emitting layer 4411 contains, for example, a light-emitting compound.
  • the layer 4430 can have, for example, a layer containing a substance with high hole-injection properties (hole-injection layer) and a layer containing a substance with high hole-transport properties (hole-transport layer).
  • a structure having layer 4420, light-emitting layer 4411, and layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 17A is referred to as a single structure herein.
  • FIG. 17B is a modification of the EL layer 786 included in the light emitting device shown in FIG. 17A. Specifically, the light-emitting device shown in FIG. and an electrode 788 on the layer 4422 .
  • layer 4431 functions as a hole injection layer
  • layer 4432 functions as a hole transport layer
  • layer 4421 functions as an electron transport layer
  • layer 4422 functions as an electron injection layer.
  • layer 4431 functions as an electron injection layer
  • layer 4432 functions as an electron transport layer
  • layer 4421 functions as a hole transport layer
  • layer 4422 functions as a hole transport layer. It functions as a hole injection layer.
  • carriers can be efficiently injected into the light-emitting layer 4411 and the efficiency of carrier recombination in the light-emitting layer 4411 can be increased.
  • a configuration in which a plurality of light emitting layers (light emitting layers 4411, 4412, and 4413) are provided between layers 4420 and 4430 as shown in FIG. 17C is also a variation of the single structure.
  • tandem structure a structure in which a plurality of light-emitting units (EL layers 786a and 786b) are connected in series with an intermediate layer 4440 (also referred to as a charge generation layer) interposed therebetween is referred to as a tandem structure in this specification.
  • EL layers 786a and 786b light-emitting units
  • intermediate layer 4440 also referred to as a charge generation layer
  • tandem structure enables a light-emitting device capable of emitting light with high luminance.
  • each of the layers 4420 and 4430 can have a laminated structure of two or more layers as shown in FIG. 17B.
  • the emission color of the light emitting device can be red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material that composes the EL layer 786 . Further, the color purity can be further enhanced by providing the light-emitting device with a microcavity structure.
  • a light-emitting device that emits white light preferably has a structure in which a light-emitting layer contains two or more kinds of light-emitting substances.
  • two or more light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
  • the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole.
  • the light-emitting layer preferably contains two or more light-emitting substances that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange).
  • R red
  • G green
  • B blue
  • Y yellow
  • O orange
  • the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to these, aluminum, gallium, yttrium, tin and the like are preferably contained. In addition, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
  • the metal oxide is formed by sputtering, chemical vapor deposition (CVD) such as metal organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD). It can be formed by a layer deposition method or the like.
  • CVD chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • ALD atomic layer deposition
  • Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (polycrystal) and the like.
  • the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
  • XRD X-ray diffraction
  • it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
  • GIXD Gram-Incidence XRD
  • the GIXD method is also called a thin film method or a Seemann-Bohlin method.
  • the peak shape of the XRD spectrum is almost symmetrical.
  • the peak shape of the XRD spectrum is left-right asymmetric.
  • the asymmetric shape of the peaks in the XRD spectra demonstrates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
  • the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nanobeam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
  • a diffraction pattern also referred to as a nanobeam electron diffraction pattern
  • NBED nano beam electron diffraction
  • a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state.
  • a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is neither crystalline nor amorphous, but in an intermediate state and cannot be concluded to be in an amorphous state.
  • oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
  • CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
  • a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
  • CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
  • the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
  • each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystalline region is less than 10 nm.
  • the size of the crystal region may be about several tens of nanometers.
  • CAAC-OS contains indium (In) and oxygen.
  • a tendency to have a layered crystal structure also referred to as a layered structure in which a layer (hereinafter referred to as an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter referred to as a (M, Zn) layer) are stacked.
  • the (M, Zn) layer may contain indium.
  • the In layer contains the element M.
  • the In layer may contain Zn.
  • the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
  • a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit lattice is not always regular hexagon and may be non-regular hexagon. Moreover, the distortion may have a lattice arrangement such as a pentagon or a heptagon. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction and the bond distance between atoms changes due to the substitution of metal atoms. it is conceivable that.
  • a crystal structure in which clear grain boundaries are confirmed is called a so-called polycrystal.
  • a grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-current of a transistor, a decrease in field-effect mobility, and the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
  • a structure containing Zn is preferable for forming a CAAC-OS.
  • In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
  • a CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
  • a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
  • CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
  • nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
  • the nc-OS has minute crystals.
  • the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
  • an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
  • an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
  • an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
  • an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
  • An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
  • An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
  • CAC-OS relates to material composition.
  • CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
  • the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are represented by [In], [Ga], and [Zn], respectively.
  • the first region is a region where [In] is larger than [In] in the composition of the CAC-OS.
  • the second region is a region in which [Ga] is larger than [Ga] in the CAC-OS composition.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region containing indium oxide, indium zinc oxide, or the like as a main component.
  • the second region is a region containing gallium oxide, gallium zinc oxide, or the like as a main component. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
  • the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
  • a CAC-OS can be formed, for example, by a sputtering method under conditions in which the substrate is not heated.
  • a sputtering method one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. good.
  • an inert gas typically argon
  • oxygen gas typically argon
  • a nitrogen gas may be used as a deposition gas. good.
  • the lower the flow rate ratio of the oxygen gas to the total flow rate of the film formation gas during film formation, the better. is preferably 0% or more and 10% or less.
  • a region containing In as a main component is obtained by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
  • EDX energy dispersive X-ray spectroscopy
  • the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
  • the second region is a region with higher insulation than the first region.
  • the leakage current can be suppressed by distributing the second region in the metal oxide.
  • CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act complementarily to provide a switching function (on/off). functions) can be given to the CAC-OS.
  • a part of the material has a conductive function
  • a part of the material has an insulating function
  • the whole material has a semiconductor function.
  • CAC-OS is most suitable for various semiconductor devices including display devices.
  • Oxide semiconductors have various structures and each has different characteristics.
  • An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
  • an oxide semiconductor with low carrier concentration is preferably used for a transistor.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2. ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
  • the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
  • oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
  • part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • the electronic devices of this embodiment each include the display device of one embodiment of the present invention in a display portion.
  • the display device of one embodiment of the present invention can easily have high definition and high resolution. Therefore, it can be used for display portions of various electronic devices.
  • Examples of electronic devices include televisions, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens. Examples include cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, mobile information terminals, and sound reproducing devices.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • wearable devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • a wearable device that can be attached to a part is exemplified.
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi or more.
  • the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIGS. 18A, 18B, 19A, and 19B An example of a wearable device that can be worn on the head will be described with reference to FIGS. 18A, 18B, 19A, and 19B.
  • These wearable devices have one or both of the function of displaying AR content and the function of displaying VR content.
  • these wearable devices may have a function of displaying SR or MR content in addition to AR and VR.
  • the electronic device has a function of displaying content such as AR, VR, SR, and MR, it is possible to enhance the immersive feeling of the user.
  • Electronic device 700A shown in FIG. 18A and electronic device 700B shown in FIG. It has a control section (not shown), an imaging section (not shown), a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
  • the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
  • Each of the electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical member 753 . Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.
  • the electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit. Further, the electronic devices 700A and 700B each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756. You can also
  • the communication unit has a wireless communication device, and can supply a video signal or the like by the wireless communication device.
  • a connector to which a cable to which a video signal and a power supply potential are supplied may be provided.
  • the electronic device 700A and the electronic device 700B are provided with batteries, and can be charged wirelessly and/or wiredly.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and fast-forward or fast-reverse processing can be performed by a slide operation. Further, by providing a touch sensor module for each of the two housings 721, the range of operations can be expanded.
  • Various touch sensors can be applied as the touch sensor module.
  • various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as a light receiving device (also referred to as a light receiving element).
  • a light receiving device also referred to as a light receiving element.
  • an inorganic semiconductor and an organic semiconductor can be used for the active layer of the photoelectric conversion device.
  • Electronic device 800A shown in FIG. 19A and electronic device 800B shown in FIG. It has a pair of imaging units 825 and a pair of lenses 832 .
  • the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
  • the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
  • Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
  • a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
  • the electronic device 800A and the electronic device 800B each have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. Further, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
  • Mounting portion 823 allows the user to mount electronic device 800A or electronic device 800B on the head.
  • the shape is illustrated as a temple of spectacles (also referred to as a joint, a temple, etc.), but the shape is not limited to this.
  • the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
  • the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 . An image sensor can be used for the imaging unit 825 . Also, a plurality of cameras may be provided so as to be able to deal with a plurality of angles of view such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance to an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging) can be used.
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
  • a vibration mechanism that functions as bone conduction earphones.
  • one or more of the display portion 820, the housing 821, and the mounting portion 823 can be provided with the vibration mechanism.
  • the user can enjoy video and audio simply by wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • Each of the electronic device 800A and the electronic device 800B may have an input terminal.
  • the input terminal can be connected to a cable that supplies a video signal from a video output device or the like, power for charging a battery provided in the electronic device, or the like.
  • An electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .
  • Earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
  • information eg, audio data
  • electronic device 700A shown in FIG. 18A has a function of transmitting information to earphone 750 by a wireless communication function.
  • electronic device 800A shown in FIG. 19A has a function of transmitting information to earphone 750 by a wireless communication function.
  • the electronic device may have an earphone section.
  • Electronic device 700B shown in FIG. 18B has earphone section 727 .
  • the earphone section 727 and the control section can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
  • electronic device 800B shown in FIG. 19B has an earphone section 827 .
  • the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
  • the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
  • the electronic device may have an audio output terminal to which earphones, headphones, or the like can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
  • the voice input mechanism for example, a sound collecting device such as a microphone can be used.
  • the electronic device may function as a so-called headset.
  • the electronic device of one embodiment of the present invention includes both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). preferred.
  • the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.
  • An electronic device 6500 illustrated in FIG. 20A is a mobile information terminal that can be used as a smart phone.
  • An electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 20B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • FIG. 21A shows an example of a television device.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television apparatus 7100 shown in FIG. 21A can be performed by operation switches provided in the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel provided in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication is performed. is also possible.
  • FIG. 21B shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIG. 21C An example of digital signage is shown in FIG. 21C and FIG. 21D.
  • a digital signage 7300 illustrated in FIG. 21C includes a housing 7301, a display portion 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 21D is a digital signage 7400 mounted on a cylindrical post 7401.
  • FIG. A digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 21C and 21D.
  • the display portion 7000 As the display portion 7000 is wider, the amount of information that can be provided at one time can be increased. In addition, the wider the display unit 7000, the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display portion 7000, not only an image or a moving image can be displayed on the display portion 7000 but also the user can intuitively operate the display portion 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or the digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operation means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • the electronic device shown in FIGS. 22A to 22F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed). , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays function), a microphone 9008, and the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 9001 in FIGS. 22A to 22F.
  • the electronic devices shown in FIGS. 22A-22F have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • FIG. 22A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 22A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone call, title of e-mail or SNS, sender name, date and time, remaining battery power, radio wave intensity, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 22B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 22C is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also make hands-free calls by mutual communication with a headset capable of wireless communication, for example.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006 and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 22D to 22F are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 22D is a perspective view of the portable information terminal 9201 in an unfolded state
  • FIG. 22F is a folded state
  • FIG. 22E is a perspective view of a state in the middle of changing from one of FIGS. 22D and 22F to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

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