WO2022156201A1 - 制程设备和制程方法 - Google Patents

制程设备和制程方法 Download PDF

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Publication number
WO2022156201A1
WO2022156201A1 PCT/CN2021/113173 CN2021113173W WO2022156201A1 WO 2022156201 A1 WO2022156201 A1 WO 2022156201A1 CN 2021113173 W CN2021113173 W CN 2021113173W WO 2022156201 A1 WO2022156201 A1 WO 2022156201A1
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WO
WIPO (PCT)
Prior art keywords
gas
reaction chamber
channel
air inlet
reaction
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PCT/CN2021/113173
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English (en)
French (fr)
Inventor
马克
Original Assignee
长鑫存储技术有限公司
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Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Priority to US17/452,630 priority Critical patent/US20220230855A1/en
Publication of WO2022156201A1 publication Critical patent/WO2022156201A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1052—Formation of thin functional dielectric layers

Definitions

  • the present application relates to the field of semiconductor manufacturing, and in particular, to a manufacturing equipment and a manufacturing method.
  • Aluminum has the advantages of low resistivity and easy availability, and is widely used as a material for metal wiring conductors in the semiconductor industry. As the size of the integrated circuit is gradually reduced and the design aspect ratio is increased, the chip size is required to be smaller and smaller, and the thickness of the metal wiring conductor is thinner and thinner.
  • the aluminum metal wire has the characteristics of poor resistance to electron migration.
  • a barrier layer is usually deposited between the aluminum metal and the dielectric layer. Due to the complex process, the dielectric layer is often caused. The surface is contaminated by oxidation, so the oxidation contamination on the surface of the dielectric layer is removed before the barrier layer is deposited on the surface of the dielectric layer.
  • Embodiments of the present application provide a process equipment and a process method, which aim to improve the state of the chamber inside the machine during the process of continuously removing the oxidation contamination on the surface of the dielectric layer, thereby improving the yield of wafer products.
  • a process equipment including: a reaction chamber for performing a surface treatment process on a wafer placed in the reaction chamber, and the surface treatment process is used for removing contamination on the surface of the wafer layer; a carrying platform, located in the reaction chamber, for carrying wafers or substrates; the reaction chamber is provided with a first air inlet channel and a second air inlet channel; the first air inlet channel is used for introducing the reaction gas into the reaction chamber, and the reaction The gas is used to perform the surface treatment process; between the two surface treatment processes, the second air inlet channel is used to introduce cleaning gas into the reaction chamber, and the cleaning gas is used to clean the reaction chamber.
  • the second air inlet channel is used to introduce cleaning gas into the reaction chamber between two surface treatment processes, and the cleaning gas is used to clean the reaction chamber. Therefore, the cleaning of the reaction chamber is completed between the two surface treatment processes performed by the process equipment, so as to ensure that the reaction chamber is in a clean state when the wafer is subjected to the surface treatment process, thereby preventing contamination from falling off and affecting the yield of the product. question.
  • An embodiment of the present application also provides a process method, based on the above-mentioned process equipment, including: placing a carrier plate on a support table of the process equipment before the process equipment performs two surface treatment processes; The cleaning gas is introduced into the reaction chamber and the first air inlet channel is controlled to flow the reaction gas into the reaction chamber, and the cleaning gas is used to clean the reaction chamber; the carrier plate on the bearing platform is taken out to complete the cleaning of the reaction chamber.
  • the cleaning of the reaction chamber is completed between the two surface treatment processes performed by the process equipment to ensure that the reaction chamber is in a clean state when the wafer is subjected to the surface treatment process, thereby preventing contamination from falling off and affecting the product. problem of yield.
  • 1 to 4 are schematic structural diagrams of semiconductor structures corresponding to each step in an aluminum metal interconnect deposition process according to an embodiment of the present application
  • FIG. 5 and FIG. 6 are schematic structural diagrams of a process equipment provided by an embodiment of the application.
  • FIG. 7 is a schematic flowchart of a process method provided by another embodiment of the present application between two surface treatment processes
  • 8 to 12 are schematic structural diagrams of process equipment corresponding to each step between two surface treatment processes in the process method provided by another embodiment of the present application;
  • FIG. 13 is a schematic flowchart of a single surface treatment process of a manufacturing method provided by another embodiment of the present application.
  • the semiconductor structure includes: a substrate 101 and a dielectric layer 102 , a through hole is formed in the substrate 101 and the dielectric layer 102 , a first conductive film 103 located on the sidewall of the through hole and a second conductive film 103 filling the through hole are formed in the through hole
  • the surface of the dielectric layer 102 is often oxidized and contaminated to form an oxide layer 110 , that is, the oxide layer 110 located on the top of the semiconductor structure. Therefore, the oxide layer 110 needs to be removed first when depositing the aluminum metal wires on the semiconductor structure, so as to avoid that the formed aluminum metal wires cannot be electrically connected to the second conductive film 104 due to the existence of the oxide layer 110 .
  • the semiconductor structure with the oxide layer 110 on top is placed in a semiconductor process equipment to complete the removal of the oxide layer 110 .
  • a first conductive layer 105, a second conductive layer 106 and a third conductive layer 107 are sequentially deposited on top of the semiconductor structure, wherein the material of the second conductive layer 106 is aluminum, which has low resistivity and is easy to In the semiconductor industry, it is widely used as a material for metal wiring wires; the material of the first conductive layer 105 is titanium, because titanium has the characteristics of good resistance to electron migration, thereby preventing the metal in the second conductive layer 106. Ion diffusion; the material of the third conductive layer 107 is titanium nitride, which is used for the electrical connection between the second conductive layer 106 and the subsequently formed semiconductor conductive material.
  • the oxide layer needs to be removed first when depositing metal wires on the semiconductor structure.
  • the machine continues to remove the oxidation contamination on the surface of the dielectric layer, the state of the internal chamber of the machine will deteriorate, and there will be contamination inside the chamber, which will affect the Product yield problem.
  • an embodiment of the present application provides a process equipment, including: a reaction chamber for performing a surface treatment process on a wafer placed in the reaction chamber, and the surface treatment process is used for removing the contamination layer on the surface of the wafer ; a bearing platform, located in the reaction chamber, used to carry wafers or carrier plates; the reaction chamber has a first air inlet channel and a second air inlet channel; the first air inlet channel is used to introduce a reaction gas into the reaction chamber, and the reaction gas It is used for performing the surface treatment process; between two surface treatment processes, the second air inlet channel is used for introducing cleaning gas into the reaction chamber, and the cleaning gas is used for cleaning the reaction chamber.
  • FIG. 5 and FIG. 6 are schematic structural diagrams of the process equipment provided by the present embodiment.
  • the process equipment provided by the embodiment of the present application will be described in detail below with reference to the accompanying drawings, and the details are as follows:
  • the process equipment includes:
  • the reaction chamber 201 is used for performing a surface treatment process on the wafer placed in the reaction chamber 201, and the surface treatment process is used for removing the contamination layer on the surface of the wafer.
  • the reaction chamber 201 includes a bottom chamber 211 and a top cover 221.
  • the inner space of the bottom chamber 211 and the top cover 221 constitutes the reaction chamber 201.
  • the bottom of the bottom chamber 211 is provided with an access valve, and the access valve is used to separate the wafers and the The carrier plate is put into the reaction chamber 201, or the wafer and the carrier plate in the reaction chamber 201 are taken out.
  • the carrying table 202 is located in the reaction chamber 201 and is used for carrying a wafer or a carrier plate.
  • the carrying table 202 is located at the bottom of the bottom cavity 211 , and the carrying table 202 is connected with a radio frequency power source, which is used to charge the surface of the carrying table 202 positively or negatively charge the surface of the carrying table 202 .
  • the reaction chamber 201 has a first inlet channel 301 and a second inlet channel 302; the first inlet channel 301 is used to introduce a reaction gas into the reaction chamber 201, and the reaction gas is used to perform a surface treatment process; Between the treatment processes, the second air inlet channel 302 is used for introducing cleaning gas into the reaction chamber 201 , and the cleaning gas is used for cleaning the reaction chamber 201 .
  • the reactive gas is plasma argon, that is, Ar + ;
  • the plasma argon can be directly introduced into the reaction chamber 201 through the first gas inlet channel 301 after being formed externally, or the argon gas can be introduced into the reaction chamber 201
  • the radio frequency power supply makes the surface of the bearing platform 202 negatively charged, the positively charged Ar +
  • the direction of the carrying table 202 moves to physically bombard the wafer carried by the carrying table 202, thereby completing the surface treatment process of the wafer;
  • the negatively charged e - moves in the direction away from the carrying table 202, that is, a large number of electrons are collected in the top cover
  • the introduced argon gas is converted into plasma argon;
  • the reaction gas mentioned in this embodiment is plasma argon only to illustrate the execution process of the surface treatment process in this embodiment, and does not constitute a For
  • the material of the oxide layer remains in the reaction chamber 201 .
  • the process equipment continues to remove the dielectric layer 102 (refer to FIG. 1 ) 1)
  • Surface oxidation pollution will cause the state of the internal chamber of the machine to deteriorate, and there is a problem of pollution falling off inside the chamber. After the pollution falls off, it falls on the surface of the wafer, resulting in the formation of the first conductive layer 105 and the second conductive layer 106. There is a gap between the third conductive layer 107 and the third conductive layer 107, thereby affecting the yield of the product.
  • the second air inlet channel 302 is used for introducing cleaning gas into the reaction chamber 201 , and the cleaning gas is used for cleaning the reaction chamber 201 .
  • the cleaning gas includes a reducing gas and a first purge gas
  • the second intake channel 302 includes: a first intake sub-channel 312 and a second intake sub-channel 322; wherein, the first intake sub-channel 312,
  • the second inlet sub-channel 322 is used for introducing the reducing gas into the reaction chamber 201 , and the first purging gas is introduced into the reaction chamber 201 .
  • a carrier plate is placed on the carrier table 202 , and the first air inlet sub-channel 312 introduces a reducing gas into the reaction chamber 201 , and the reducing gas is attached to the reaction chamber 201 .
  • Oxidation-reduction reaction of the oxidative pollution occurs in the reaction chamber 201 to reduce the degree of adhesion of the pollutants attached to the reaction chamber 201; then the first air inlet channel 301 feeds the reaction gas into the reaction chamber, and at this time the reaction gas is opposite to the reaction gas attached to the reaction chamber 201.
  • the pollutants on the air are bombarded to make the solid pollutants fall off and fall on the carrier plate; finally, the first purge gas is introduced into the reaction chamber 201 through the second air inlet sub-channel 322 to complete the blowing of the reaction chamber 201 At the same time, the carrier plate on the carrier table 202 is removed from the reaction chamber 201, so that the cleaning of the reaction chamber 201 is completed between the two surface treatment processes.
  • the reducing gas includes at least hydrogen gas
  • the first purging gas includes at least one of nitrogen gas and inert gas.
  • the process equipment further includes: a first gas supply module connected to the first air inlet channel 301 , the opening time of the first gas supply module is 10-15s, and the flow rate of the incoming reaction gas is 4-6sccm/s .
  • the opening time of the first gas supply module is 12s or 14s, and the flow rate of the reacting gas is 5sccm/s.
  • the opening time of the first gas supply module is shorter than 10s, sufficient reducing gas cannot be introduced into the reaction chamber 201, resulting in insufficient reaction between the reducing gas and the pollutants attached to the reaction chamber 201, thereby affecting the reaction
  • the cleaning status of the chamber 201 if the opening time of the first gas supply module is longer than 15s, it is equivalent to prolonging the interval between two surface treatment processes, thereby reducing the efficiency of the surface treatment process; if the flow rate of the reducing gas is less than 4sccm/s, It is impossible to pass enough reducing gas into the reaction chamber 201, so that the reaction between the reducing gas and the pollutants attached to the reaction chamber 201 is not thorough enough, thereby affecting the cleaning state of the reaction chamber 201; if the flow rate of the reducing gas is greater than 6sccm /s, an excessive amount of reducing gas is introduced, resulting in a waste of resources and an increase in the process cost of cleaning the reaction chamber.
  • the process equipment further includes: a second gas supply module connected to the first air inlet sub-channel 312, the opening time of the second gas supply module is 25-40s, and the flow rate of the reducing gas is 6-10sccm /s. In one example, the opening time of the second gas supply module is 30s or 35s, and the flow rate of the reducing gas introduced is 8sccm/s.
  • the turn-on time of the second gas supply module is shorter than 25s, sufficient reaction gas cannot be introduced into the reaction chamber 201 , so that the reaction gas cannot fully bombard the pollutants attached to the reaction chamber 201 , thereby affecting the cleaning of the reaction chamber 201 condition; if the opening time of the second gas supply module is longer than 40s, it is equivalent to prolonging the interval between two surface treatment processes, thereby reducing the efficiency of the surface treatment process; if the flow rate of the reaction gas is less than 6sccm/s, the reaction chamber cannot be supplied Enough reaction gas is introduced into 201, so that the reaction gas cannot fully bombard the pollutants attached to the reaction chamber 201, thereby affecting the cleaning condition of the reaction chamber 201; if the flow rate of the reaction gas is greater than 10sccm/s, an excessive amount of reaction is introduced gas, causing waste of resources and increasing the process cost of cleaning the reaction chamber.
  • the process equipment further includes: a third gas supply module connected to the second inlet sub-channel 322, the opening time of the third gas supply module is 6-10s, and the flow rate of the first purge gas is 6 ⁇ 10sccm/s.
  • the opening time of the third gas supply module is 7s or 9s, and the flow rate of the first purge gas is 8sccm/s.
  • the turn-on time of the third gas supply module is shorter than 6s, the remaining gas in the reaction chamber 201 cannot be completely purged, resulting in the presence of clean gas in the reaction chamber, which may affect the subsequent surface treatment process; if the third gas supply module The turn-on time of the first purging gas is longer than 10s, which is equivalent to prolonging the interval between two surface treatment processes, thereby reducing the efficiency of the surface treatment process; if the flow rate of the first purge gas is less than 6sccm/s, the remaining gas in the reaction chamber 201 cannot be removed The purging is complete, resulting in the presence of clean gas in the reaction chamber, which may affect the subsequent surface treatment process; if the flow rate of the first purging gas is greater than 10sccm/s, an excess of the first purging gas is introduced, resulting in waste of resources and increased The process cost of cleaning the reaction chamber is reduced.
  • the process equipment further includes a control module that stores the first preset time, the second preset time, and the third preset time; the control module is used for executing, opening the first air inlet sub-channel 312, and feeding the reaction chamber to the
  • the reducing gas for the first preset time is introduced into 201; the first inlet sub-channel 312 is closed and the first inlet channel 301 is opened, and the reaction gas for the second preset time is introduced into the reaction chamber 201;
  • the inlet channel 301 is opened and the second inlet sub-channel 322 is opened, and the first purge gas for the third preset time is introduced into the reaction chamber; the cleaning of the reaction chamber is automatically realized by the control module, so as to avoid human error caused by manipulation
  • the yield of the product is reduced, and the yield of the product is further improved.
  • the first preset time is the introduction time of the reducing gas
  • the second preset time is the introduction time of the reaction gas
  • the third preset time is the introduction time of the first purge gas.
  • the reaction chamber 201 further has a third air inlet channel 303 , and the third air inlet channel is used for the second purging during the process of removing the wafer from the reaction chamber after the surface treatment process is completed.
  • the gas sweeps the surface of the wafer.
  • the surface of the wafer is continuously purged through the third air inlet channel 303. Even if contaminants fall on the surface of the wafer, the contaminants can be removed by the second purge gas. Purge to further ensure the yield of wafer products.
  • the second purge gas includes at least one of nitrogen gas and inert gas.
  • the third air inlet channel 303 is provided on the inlet and outlet valves of the reaction chamber 201 , and the angle between the air outlet of the third air inlet channel 303 and the cavity wall of the reaction chamber 201 is 5-35°. Based on the included angle of 5-35°, the cleaning effect of the second purging gas on the wafer surface is better; in one example, the included angle between the air outlet of the third air inlet channel 303 and the cavity wall of the reaction chamber 201 is 10°, 20° or 30°.
  • the process equipment further includes: a fourth gas supply module connected to the third air inlet channel 303, the opening time of the fourth gas supply module is 4-6 seconds, and the flow rate of the second purge gas is 3-6 seconds. 6sccm/s. In one example, the opening time of the fourth gas supply module is 5s, and the flow rate of the second purging gas is 4sccm/s or 5sccm/s.
  • the turn-on time of the fourth gas supply module is shorter than 4s, the time for the second purging gas to sweep the surface of the wafer cannot cover the process of taking the wafer out of the reaction chamber 201, and the omnidirectional purging of the surface of the wafer cannot be guaranteed; If the turn-on time of the fourth gas supply module is longer than 6s, after the wafer is taken out from the reaction chamber 201, the fourth gas supply module continues to supply gas, resulting in a waste of resources and an increase in the cost of cleaning the wafer surface; If the flow rate of the purge gas is less than 3sccm/s, the flow rate of the gas is too small, and the contaminants on the wafer surface may not be purged and removed; if the flow rate of the second purge gas is greater than 6sccm/s, the flow rate of the gas is too large, and the same A large amount of gas is supplied during the purging time, which results in waste of resources and increases the cost of purging the wafer surface.
  • the second air inlet channel is used to pass cleaning gas into the reaction chamber between two surface treatment processes, and the cleaning gas is used for cleaning reaction.
  • Indoor contamination so that the cleaning of the reaction chamber is completed between the two surface treatment processes performed by the process equipment to ensure that the reaction chamber is in a clean state when the wafer is subjected to the surface treatment process, thereby preventing contamination from falling off and affecting product yields The problem.
  • the process equipment includes: placing a carrier board on a carrier table of the process equipment before the process equipment performs two surface treatment processes; controlling the second The air inlet channel introduces cleaning gas into the reaction chamber and controls the first air inlet channel to let the reaction gas into the reaction chamber, and the cleaning gas is used to clean the reaction chamber; the carrier plate on the bearing platform is taken out to complete the cleaning of the reaction chamber.
  • FIG. 7 is a schematic flowchart of the process method provided by this embodiment between two surface treatment processes
  • FIGS. 8 to 12 are process equipment corresponding to each step between the two surface treatment processes by the process method provided by this embodiment.
  • 13 is a schematic flow diagram of the process method provided by this embodiment for a single surface treatment process
  • FIGS. 14 and 15 are a process equipment corresponding to each step of the single surface treatment process by the process method provided by this embodiment.
  • the process method includes:
  • step 401 between the two surface treatment processes performed by the process equipment, the carrier board is placed on the support table of the process equipment.
  • the carrier plate 430 may be scrap wafers with poor yields in other processes, and the carrier plate 430 is used to carry out the solid contaminants 410 in the reaction chamber 201 .
  • step 402 control the second air inlet channel to pass the cleaning gas into the reaction chamber and control the first air intake channel to pass the reaction gas into the reaction chamber.
  • the cleaning gas is used to clean the reaction chamber.
  • the first gas inlet sub-channel is controlled to pass the reducing gas into the reaction chamber for a first preset time.
  • the reducing gas includes at least hydrogen; the first inlet sub-pipe 312 feeds the hydrogen into the reaction chamber 201 , and the hydrogen chemically reacts with the solid pollutants 410 in the reaction chamber 201 to generate
  • the softened pollutant 420 reduces the adhesion strength of the pollutant to the cavity wall of the reaction chamber 201 .
  • the reaction gas causes the reaction gas to be unable to fully bombard the pollutants attached to the reaction chamber 201, thereby affecting the cleaning state of the reaction chamber 201; if the flow rate of the reaction gas is greater than 10sccm/s, excessive reaction gas is introduced, resulting in waste of resources, The process cost of cleaning the reaction chamber is increased.
  • the first gas inlet channel is controlled to flow the reaction gas into the reaction chamber for a second preset time.
  • the first air inlet pipe 301 introduces the reaction gas into the reaction chamber 201 , and the reaction gas bombards the softened pollutants 420 attached to the reaction chamber 201 .
  • the second preset time is 10-15 s, and the flow rate of the reacting gas is 4-6 sccm/s. In one example, the second preset time is 12s or 14s, and the flow rate of the reacting gas is 5sccm/s. If the second preset time is shorter than 10s, sufficient reducing gas cannot be introduced into the reaction chamber 201, resulting in insufficient reaction between the reducing gas and the pollutants attached to the reaction chamber 201, thereby affecting the reaction chamber 201.
  • the second preset time is longer than 15s, it is equivalent to prolonging the interval between two surface treatment processes, thereby reducing the efficiency of the surface treatment process; if the flow rate of the reducing gas is less than 4sccm/s, it cannot be sent to the reaction chamber 201 Sufficient reducing gas is introduced, resulting in insufficient reaction between the reducing gas and the pollutants attached to the reaction chamber 201, thereby affecting the cleaning condition of the reaction chamber 201; if the flow rate of the reducing gas is greater than 6 sccm/s, the Excessive reducing gas causes waste of resources and increases the process cost of cleaning the reaction chamber.
  • the second gas inlet sub-channel is controlled to pass the second purge gas into the reaction chamber for a third preset time.
  • the first purge gas includes at least one of nitrogen gas and inert gas; the softened pollutants 420 bombarded by the reactive gas fall into the carrier plate 430 , and at this time the second inlet gas
  • the pipeline 322 continuously feeds the first purge gas into the reaction chamber 201 to complete the cleaning of the gas environment in the reaction chamber 201 .
  • the third preset time is 6-10 s, and the flow rate of the first purge gas is 6-10 sccm/s. In one example, the third preset time is 7s or 9s, and the flow rate of the first purge gas is 8sccm/s.
  • the third preset time is shorter than 6s, the remaining gas in the reaction chamber 201 cannot be completely purged, resulting in the presence of cleaning gas in the reaction chamber which may affect the subsequent surface treatment process; if the third preset time is longer than 10s, It is equivalent to prolonging the interval of two surface treatment processes, thereby reducing the efficiency of the surface treatment process; if the flow rate of the first purge gas is less than 6 sccm/s, the remaining gas in the reaction chamber 201 cannot be completely purged, resulting in the reaction The presence of cleaning gas in the chamber may affect the subsequent surface treatment process; if the flow rate of the first purge gas is greater than 10sccm/s, an excess of the first purge gas is introduced, resulting in waste of resources and increasing the process of cleaning the reaction chamber cost.
  • Step 403 take out the carrier board on the carrier table. After removing the carrier plate on the carrier table, the cleaning of the reaction chamber is completed.
  • the process method includes:
  • step 501 the wafer is placed on the carrier table of the process equipment to perform a surface treatment process.
  • Step 502 after the process equipment performs the surface treatment process, during the process of taking out the wafer from the reaction chamber, a second purge gas is used to purge the surface of the wafer.
  • the surface of the wafer is cleaned with a second purging gas.
  • the surface of the wafer is continuously purged. Even if contaminants fall on the surface of the wafer, the contaminants can be purged by the second purging gas to further ensure the yield of wafer products.
  • the second purge gas includes at least one of nitrogen gas and inert gas.
  • the second purging gas is blown toward the surface of the wafer in a direction with an included angle of 5° to 35° with the chamber wall of the reaction chamber 201 . Based on the included angle of 5-35°, the cleaning effect of the second purging gas on the wafer surface is better; ° or 30° to the surface of the wafer.
  • Azimuth purging if the second purging gas sweeps the wafer surface for longer than 6s, after the wafer is taken out from the reaction chamber 201, the fourth gas supply module continues to supply gas, resulting in waste of resources and increased wafer surface
  • the cost of purging if the flow rate of the second purge gas is less than 3sccm/s, the flow rate of the gas is too small, and the contaminants on the wafer surface may not be purged and removed; if the flow rate of the second purge gas is greater than 6sccm/s, The flow rate of the gas is too large, and the amount of gas supplied in the same cleaning time is large, which causes waste of resources and increases the cost of cleaning the wafer surface.
  • the cleaning of the reaction chamber is completed between the two surface treatment processes performed by the process equipment to ensure that the reaction chamber is in a clean state when the wafer is subjected to the surface treatment process, thereby preventing contamination from falling off and affecting the product. problem of yield.

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Abstract

本申请实施例提供一种制程设备及制程方法，其中，制程设备包括：反应室，用于对置于反应室中的晶圆进行表面处理工艺，表面处理工艺用于去除晶圆表面的污染层；承载台，位于反应室内，用于承载晶圆或载板；反应室上具有第一进气通道和第二进气通道；第一进气通道用于向反应室内通入反应气体，反应气体用于执行表面处理工艺；在两次表面处理工艺之间，第二进气通道用于向反应室内通入清洗气体，清洗气体用于清洗反应室；本申请实施例旨在于在机台持续去除介质层表面的氧化污染过程中，改善机台内部腔室的状态，从而提高晶圆产品的良率。

Description

制程设备和制程方法
交叉引用
本申请基于申请号为202110068749.X、申请日为2021年01月19日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本申请涉及半导体制程领域，尤其涉及一种制程设备及制程方法。
背景技术
铝具有电阻率低、容易获得等优点，在半导体行业被广泛地用作金属连线导线的材料。随着集成电路尺寸逐渐减小和设计深宽比增大，要求芯片尺寸越来越小，金属连线导线的厚度越来越薄。
铝金属导线具有抗电子迁移能力比较差的特点，现有制程过程中为防止铝的扩散，通常会在铝金属和介质层之间沉积一层阻挡层，由于复杂的制程工艺往往会导致介质层表面被氧化污染，因此在介质层表面沉积阻挡层之前会去除介质层表面的氧化污染。
申请人发现，当机台持续去除介质层表面的氧化污染会导致机台内部腔室状态变差，腔室内部存在污染脱落从而影响产品的良率的问 题，如何在机台持续去除介质层表面的氧化污染过程中改善机台内部腔室的状态，是当前亟待解决的问题。
发明内容
本申请实施例提供一种制程设备及制程方法，旨在于在机台持续去除介质层表面的氧化污染过程中，改善机台内部腔室的状态，从而提高晶圆产品的良率。
为解决上述技术问题，本申请的实施例提供了一种制程设备，包括：反应室，用于对置于反应室中的晶圆进行表面处理工艺，表面处理工艺用于去除晶圆表面的污染层；承载台，位于反应室内，用于承载晶圆或载板；反应室上具有第一进气通道和第二进气通道；第一进气通道用于向反应室内通入反应气体，反应气体用于执行表面处理工艺；在两次表面处理工艺之间，第二进气通道用于向反应室内通入清洗气体，清洗气体用于清洗反应室。
与相关技术相比，通过在制程设备上新增第二进气通道，第二进气通道用于在两次表面处理工艺之间，向反应室内通入清洗气体，清洗气体用于清洗反应室内的污染，从而在制程设备执行两次表面处理工艺之间，完成对反应室的清洗，保证晶圆在执行表面处理工艺时，反应室处于清洁的状态，从而防止污染脱落影响产品的良率的问题。
本申请实施例还提供了一种制程方法，基于上述制程设备，包括：在制程设备执行两次表面处理工艺之间，将载板放入制程设备的承载台上；控制第二进气通道向反应室内通入清洗气体且控制第一进气通 道向反应室内通入反应气体，清洗气体用于清洗反应室；取出承载台上的载板，完成对反应室的清洗。
相比于相关技术而言，在制程设备执行两次表面处理工艺之间，完成对反应室的清洗，保证晶圆在执行表面处理工艺时，反应室处于清洁的状态，从而防止污染脱落影响产品的良率的问题。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，除非有特别申明，附图中的图不构成比例限制。
图1～图4为本申请一实施例提供的铝金属连线沉积过程中各步骤对应的半导体结构的结构示意图；
图5和图6为本申请一实施例提供的制程设备的结构示意图；
图7为本申请另一实施例提供的制程方法针对两次表面处理工艺之间的流程示意图；
图8～图12为本申请另一实施例提供的制程方法针对两次表面处理工艺之间的各步骤对应的制程设备的结构示意图；
图13为本申请另一实施例提供的制程方法针对单次表面处理工艺的流程示意图；
图14和图15为本申请另一实施例提供的制程方法针对单次表面处理工艺的各步骤对应的制程设备的结构示意图。
具体实施方式
参考图1，半导体结构包括：基底101和介质层102，基底101和介质层102中形成有通孔，通孔中形成有位于通孔侧壁的第一导电膜103和填充通孔的第二导电膜104，其中，第二导电膜104采用钨材料形成。需要说明的是，本实施例提供的半导体结构仅为了说明相关技术存在的问题，并不构成对本实施例的限定。
继续参考图1，由于复杂的制程工艺，往往会导致介质层102表面被氧化污染形成氧化层110，即位于半导体结构顶部的氧化层110。因此在半导体结构上沉积铝金属导线时需先去除氧化层110，从而避免因氧化层110的存在而导致形成的铝金属导线无法与第二导电膜104电连接。
参考图2，将顶部具有氧化层110的半导体结构置于半导体制程设备中完成对氧化层110的去除。
参考图3和图4，在半导体结构顶部依次沉积第一导电层105、第二导电层106和第三导电层107，其中，第二导电层106的材料为铝，铝具有电阻率低、容易获得等优点，在半导体行业被广泛地用作金属连线导线的材料；第一导电层105的材料为钛，由于钛具有抗电子迁移能力好的特征，从而防止第二导电层106中的金属离子扩散；第三导电层107的材料为氮化钛，用于第二导电层106与后续形成的半导体导电材料的电连接。
前述工艺提到，在半导体结构上沉积金属导线时需先去除氧化层，当机台持续去除介质层表面氧化污染，会导致机台内部腔室的状 态变差，腔室内部存在污染脱落从而影响产品的良率问题。
为解决上述问题，本申请一实施例提供了一种制程设备，包括：反应室，用于对置于反应室中的晶圆进行表面处理工艺，表面处理工艺用于去除晶圆表面的污染层；承载台，位于反应室内，用于承载晶圆或载板；反应室上具有第一进气通道和第二进气通道；第一进气通道用于向反应室内通入反应气体，反应气体用于执行表面处理工艺；在两次表面处理工艺之间，第二进气通道用于向反应室内通入清洗气体，清洗气体用于清洗反应室。
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合附图对本申请的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本申请各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。以下各个实施例的划分是为了描述方便，不应对本申请的具体实现方式构成任何限定，各个实施例在不矛盾的前提下可以相互结合，相互引用。
图5和图6为本实施例提供的制程设备的结构示意图，下面结合附图对本申请实施例提供的制程设备进行详细说明，具体如下：
参考图5，制程设备，包括：
反应室201，用于对置于反应室201中的晶圆进行表面处理工艺，表面处理工艺用于去除晶圆表面的污染层。
在一个例子中，反应室201包括底腔211和顶罩221，底腔211 与顶罩221的内部空间构成反应室201，底腔211的底部设置有出入阀门，出入阀门用于将晶圆和载板放入反应室201中，或将反应室201中的晶圆和载板取出。
承载台202，位于反应室201内，用于承载晶圆或载板。
在一个例子中，承载台202位于底腔211底部，承载台202连接有射频电源，用于使承载台202的表面带正电或使承载台202的表面带负电。
反应室201上具有第一进气通道301和第二进气通道302；第一进气通道301用于向反应室201内通入反应气体，反应气体用于执行表面处理工艺；在两次表面处理工艺之间，第二进气通道302用于向反应室201内通入清洗气体，清洗气体用于清洗反应室201。
在一个例子中，反应气体为等离子体氩，即Ar +；等离子体氩可以在外部形成后直接通过第一进气通道301通入反应室201中，也可以将氩气通入到反应室201中，氩气在反应室201中转化成等离子体氩，转化的方程式为Ar+e -＝Ar ++2e -；当射频电源使承载台202的表面带负电后，带正电的Ar +向承载台202的方向移动，对承载台202承载的晶圆进行物理轰击，从而完成对晶圆的表面处理工艺；带负电的e -向远离承载台202的方向移动，即电子大量汇集在顶罩221中以将通入的氩气转化成等离子体氩；需要说明的是，本实施例中提到的反应气体为等离子体氩仅为了说明本实施例中表面处理工艺的执行过程，并不构成对本实施例的限定，在其他实施例中也可以采用其他类型的等离子体完成对承载台上晶圆的表面处理工艺。
由于对晶圆的表面处理工艺是基于物理轰击，即去除半导体结构(参考图1)顶部的氧化层后，氧化层的材料残留在反应室201中，当制程设备持续去除介质层102(参考图1)表面氧化污染会导致机台内部腔室的状态变差，腔室内部存在污染脱落的问题，污染脱落后落在晶圆表面，导致使形成的第一导电层105、第二导电层106和第三导电层107存在空隙，从而影响产品的良率。
在本实施例中，在两次表面处理工艺之间，第二进气通道302用于向反应室201内通入清洗气体，清洗气体用于清洗反应室201。
具体地，清洗气体包括还原性气体和第一吹扫气体，第二进气通道302包括：第一进气子通道312和第二进气子通道322；其中，第一进气子通道312，用于向反应室201内通入还原性气体，第二进气子通道322，用于向反应室201内通入第一吹扫气体。
更具体地，在两次表面处理工艺之间，在承载台202上放置载板，第一进气子通道312向反应室201内通入还原性气体，还原性气体与附着在反应室201内的氧化污染发生氧化还原反应，以使附着在反应室201上的污染物的附着度减小；然后第一进气通道301向反应室内通入反应气体，此时反应气体对附着在反应室201上的污染物进行轰击，以使固体污染物脱落且掉落在载板上；最后通过第二进气子通道322向反应室201内通入第一吹扫气体，完成对反应室201的吹扫，同时将承载台202上的载板移出反应室201，从而在两次表面处理工艺之间完成对反应室201的清洗。在本实施例中，还原性气体至少包括氢气，第一吹扫气体至少包括氮气和惰性气体的其中一种。
在本实施例中，制程设备还包括：连接第一进气通道301的第一气体供应模块，第一气体供应模块的开启时间为10～15s，通入反应气体的流量为4～6sccm/s。在一个例子中，第一气体供应模块的开启时间为12s或者14s，通入反应气体的流量为5sccm/s。若第一气体供应模块的开启时间短于10s，则无法向反应室201中通入足够的还原性气体，导致还原性气体与附着在反应室201上的污染物的反应不够彻底，从而影响反应室201的清洗状况；若第一气体供应模块的开启时间长于15s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若还原性气体的流量小于4sccm/s，无法向反应室201中通入足够的还原性气体，导致还原性气体与附着在反应室201上的污染物的反应不够彻底，从而影响反应室201的清洗状况；若还原性气体的流量大于6sccm/s，通入了过量的还原性气体，造成资源浪费，增加了反应室清洗的制程成本。
在本实施例中，制程设备还包括：连接第一进气子通道312的第二气体供应模块，第二气体供应模块的开启时间为25～40s，通入还原性气体的流量为6～10sccm/s。在一个例子中，第二气体供应模块的开启时间为30s或者35s，通入还原性气体的流量为8sccm/s。若第二气体供应模块的开启时间短于25s，则无法向反应室201中通入足够的反应气体，导致反应气体无法充分轰击附着在反应室201上的污染物，从而影响反应室201的清洗状况；若第二气体供应模块的开启时间长于40s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若反应气体的流量小于6sccm/s，则无法 向反应室201中通入足够的反应气体，导致反应气体无法充分轰击附着在反应室201上的污染物，从而影响反应室201的清洗状况；若反应气体的流量大于10sccm/s，通入了过量的反应气体，造成资源浪费，增加了反应室清洗的制程成本。
在本实施例中，制程设备还包括：连接第二进气子通道322的第三气体供应模块，第三气体供应模块的开启时间为6～10s，通入第一吹扫气体的流量为6～10sccm/s。在一个例子中，第三气体供应模块的开启时间为7s或者9s，通入第一吹扫气体的流量为8sccm/s。若第三气体供应模块的开启时间短于6s，则无法将反应室201中的剩余气体吹扫完全，导致反应室中可能存在清洁气体对后续的表面处理工艺产生影响；若第三气体供应模块的开启时间长于10s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若第一吹扫气体的流量小于6sccm/s，则无法将反应室201中的剩余气体吹扫完全，导致反应室中可能存在清洁气体对后续的表面处理工艺产生影响；若第一吹扫气体的流量大于10sccm/s，通入了过量的第一吹扫气体，造成资源浪费，增加了反应室清洗的制程成本。
在一个例子中，制程设备还包括控制模块，存储有第一预设时间、第二预设时间和第三预设时间；控制模块用于执行，开启第一进气子通道312，向反应室201内通入第一预设时间的还原性气体；关闭第一进气子通道312并开启第一进气通道301，向反应室201内通入第二预设时间的反应气体；关闭第一进气通道301并开启第二进气子通道322，向反应室内通入第三预设时间的第一吹扫气体；通过控制模 块自动化实现对反应室的清洗，从而避免因人为操控失误而导致的产品良率降低，进一步提高产品的良率。其中，第一预设时间即还原性气体的通入时间，第二预设时间即反应气体的通入时间，第三预设时间即第一吹扫气体的通入时间。
参考图6，在本实施例中，反应室201上还具有第三进气通道303，完成表面处理工艺后从反应室去除晶圆的过程中，第三进气通道用于采用第二吹扫气体吹扫晶圆的表面。在晶圆从反应室取出的过程中，通过第三进气通道303持续对晶圆表面进行吹扫，即使有污染物掉落在晶圆表面，也能通过第二吹扫气体对污染物进行吹扫，进一步保证晶圆产品的良率。在本实施例中，第二吹扫气体至少包括氮气和惰性气体的其中一种。
具体地，第三进气通道303设置在反应室201的出入阀门上，且第三进气通道303的出风口与反应室201的腔壁的夹角为5～35°。基于5～35°的夹角，第二吹扫气体对晶圆表面的吹扫效果更好；在一个例子中，第三进气通道303的出风口与反应室201的腔壁的夹角为10°、20°或者30°。
在本实施例中，制程设备还包括：连接第三进气通道303的第四气体供应模块，第四气体供应模块的开启时间为4～6s，通入第二吹扫气体的流量为3～6sccm/s。在一个例子中，第四气体供应模块的开启时间为5s，通入第二吹扫气体的流量为4sccm/s或者5sccm/s。若第四气体供应模块的开启时间短于4s，则第二吹扫气体吹扫晶圆表面的时间无法覆盖晶圆从反应室201取出的过程，无法保证对晶圆表 面的全方位吹扫；若第四气体供应模块的开启时间长于6s，则晶圆从反应室201取出后，第四气体供应模块还在持续供应气体，造成资源浪费，增加了晶圆表面吹扫的成本；若第二吹扫气体的流量小于3sccm/s，气体的流速过小，可能无法将晶圆表面的污染物吹扫去除；若第二吹扫气体的流量大于6sccm/s，气体的流速过大，相同的吹扫时间内供应的气体量大，造成资源浪费，增加了晶圆表面吹扫的成本。
相对于相关技术而言，通过在制程设备上新增第二进气通道，第二进气通道用于在两次表面处理工艺之间，向反应室内通入清洗气体，清洗气体用于清洗反应室内的污染，从而在制程设备执行两次表面处理工艺之间，完成对反应室的清洗，保证晶圆在执行表面处理工艺时，反应室处于清洁的状态，从而防止污染脱落影响产品的良率的问题。
本申请另一实施例涉及一种制程方法，基于上述实施例提供的制程设备，包括：在制程设备执行两次表面处理工艺之间，将载板放入制程设备的承载台上；控制第二进气通道向反应室内通入清洗气体且控制第一进气通道向反应室内通入反应气体，清洗气体用于清洗反应室；取出承载台上的载板，完成对反应室的清洗。
图7为本实施例提供的制程方法针对两次表面处理工艺之间的流程示意图，图8～图12为本实施例提供的制程方法针对两次表面处理工艺之间的各步骤对应的制程设备的结构示意图，图13为本实施例提供的制程方法针对单次表面处理工艺的流程示意图，图14和图15为本实施例提供的制程方法针对单次表面处理工艺的各步骤对应 的制程设备的结构示意图，下面结合附图对本申请实施例提供的制程方法进行详细说明，具体如下：
参考图7，制程方法，包括：
步骤401，在制程设备执行两次表面处理工艺之间，将载板放入制程设备的承载台上。
参考图8，反应室201中存在固体污染物410，需要说明的是，图8中固体污染物仅仅为对反应室201中污染物的具体说明，并不构成位置和形状的限定。将载板430通过反应室201的出入阀门放置在承载台202上。
在一个例子中，载板430可以是其他流程中良率较差的报废晶圆，载板430用于将反应室201中的固体污染物410承载带出。
继续参考图7，步骤402，控制第二进气通道向反应室内通入清洗气体且控制第一进气通道向反应室内通入反应气体。其中，清洗气体用于清洗反应室。
具体地，控制第二进气通道向反应室内通入清洗气体且控制第一进气通道向反应室内通入反应气体，包括以下步骤：
控制第一进气子通道向反应室中通入第一预设时间的还原性气体。
参考图9，在本实施例中，还原性气体至少包括氢气；第一进气子管道312将氢气通入到反应室201中，氢气与反应室201中的固体污染物410发生化学反应，生成软化污染物420，发生的化学反应的反应方程式为WO 2+2H 2＝W+2H 2O，其中，二氧化钨为本实施例对氧化污 染的举例说明，并不构成对本实施例的限定。软化污染物420相较于固体污染物410(参考图8)，污染物与反应室201腔壁的附着强度降低。
在本实施例中，第一预设时间为25～40s，通入还原性气体的流量为6～10sccm/s。在一个例子中，第一预设时间为30s或者35s，通入还原性气体的流量为8sccm/s。若第一预设时间短于25s，则无法向反应室201中通入足够的反应气体，导致反应气体无法充分轰击附着在反应室201上的污染物，从而影响反应室201的清洗状况；若第一预设时间长于40s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若反应气体的流量小于6sccm/s，则无法向反应室201中通入足够的反应气体，导致反应气体无法充分轰击附着在反应室201上的污染物，从而影响反应室201的清洗状况；若反应气体的流量大于10sccm/s，通入了过量的反应气体，造成资源浪费，增加了反应室清洗的制程成本。
控制第一进气通道向反应室中通入第二预设时间的反应气体。
参考图10，第一进气管道301将反应气体通入到反应室201中，反应气体轰击反应室201上附着的软化污染物420。
在本实施例中，第二预设时间为10～15s，通入反应气体的流量为4～6sccm/s。在一个例子中，第二预设时间为12s或者14s，通入反应气体的流量为5sccm/s。若第二预设时间短于10s，则无法向反应室201中通入足够的还原性气体，导致还原性气体与附着在反应室201上的污染物的反应不够彻底，从而影响反应室201的清洗状况； 若第二预设时间长于15s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若还原性气体的流量小于4sccm/s，无法向反应室201中通入足够的还原性气体，导致还原性气体与附着在反应室201上的污染物的反应不够彻底，从而影响反应室201的清洗状况；若还原性气体的流量大于6sccm/s，通入了过量的还原性气体，造成资源浪费，增加了反应室清洗的制程成本。
控制第二进气子通道向反应室中通入第三预设时间的第二吹扫气体。
参考图11，在本实施例中，第一吹扫气体至少包括氮气和惰性气体的其中一种；被反应气体轰击的软化污染物420掉落在载板430中，此时第二进气子管道322持续向反应室201中通入第一吹扫气体，以完成对反应室201内气体环境的清洁。
在本实施例中，第三预设时间为6～10s，通入第一吹扫气体的流量为6～10sccm/s。在一个例子中，第三预设时间为7s或者9s，通入第一吹扫气体的流量为8sccm/s。若第三预设时间短于6s，则无法将反应室201中的剩余气体吹扫完全，导致反应室中可能存在清洁气体对后续的表面处理工艺产生影响；若第三预设时间长于10s，相当于延长了两次表面处理工艺的间隔，从而导致表面处理工艺的效率降低；若第一吹扫气体的流量小于6sccm/s，则无法将反应室201中的剩余气体吹扫完全，导致反应室中可能存在清洁气体对后续的表面处理工艺产生影响；若第一吹扫气体的流量大于10sccm/s，通入了过量的第一吹扫气体，造成资源浪费，增加了反应室清洗的制程成本。
步骤403，取出承载台上的载板。去除承载台上的载板后，完成对反应室的清洗。
参考图12，载板430携带脱落的软化污染物420移出反应室201，从而实现对反应室201的清洗。
在支撑设备执行表面处理工艺后，从反应室取出晶圆的过程中，采用第二吹扫气体吹扫晶圆的表面，参考图13，制程方法，包括：
步骤501，将晶圆放入制程设备的承载台上执行表面处理工艺。
步骤502，在制程设备执行表面处理工艺后，从反应室取出晶圆的过程中，采用第二吹扫气体吹扫晶圆的表面。
参考图14和图15，从反应室201取出晶圆的过程中，采用第二吹扫气体吹扫晶圆的表面，在晶圆从反应室201取出的过程中，通过第三进气通道303持续对晶圆表面进行吹扫，即使有污染物掉落在晶圆表面，也能通过第二吹扫气体对污染物进行吹扫，进一步保证晶圆产品的良率。在本实施例中，第二吹扫气体至少包括氮气和惰性气体的其中一种。
在本实施例中，第二吹扫气体以与反应室201腔壁的夹角为5～35°的方向吹向所述晶圆的表面。基于5～35°的夹角，第二吹扫气体对晶圆表面的吹扫效果更好；在一个例子中，第二吹扫气体以与反应室201腔壁的夹角为10°、20°或者30°的方向吹向所述晶圆的表面。
在本实施例中，第二吹扫气体吹扫晶圆表面的时间为4～6s，第二吹扫气体的流量为3～6sccm/s。在一个例子中，第二吹扫气体吹扫 晶圆表面的时间为5s，通入第二吹扫气体的流量为4sccm/s或者5sccm/s。若第二吹扫气体吹扫晶圆表面的时间短于4s，则第二吹扫气体吹扫晶圆表面的时间无法覆盖晶圆从反应室201取出的过程，无法保证对晶圆表面的全方位吹扫；若第二吹扫气体吹扫晶圆表面的时间长于6s，则晶圆从反应室201取出后，第四气体供应模块还在持续供应气体，造成资源浪费，增加了晶圆表面吹扫的成本；若第二吹扫气体的流量小于3sccm/s，气体的流速过小，可能无法将晶圆表面的污染物吹扫去除；若第二吹扫气体的流量大于6sccm/s，气体的流速过大，相同的吹扫时间内供应的气体量大，造成资源浪费，增加了晶圆表面吹扫的成本。
步骤503，将下一晶圆放入制程设备的承载台上执行表面处理工艺。
相比于相关技术而言，在制程设备执行两次表面处理工艺之间，完成对反应室的清洗，保证晶圆在执行表面处理工艺时，反应室处于清洁的状态，从而防止污染脱落影响产品的良率的问题。
上面各种步骤划分，只是为了描述清楚，实现时可以合并为一个步骤或者对某些步骤进行拆分，分解为多个步骤，只要包括相同的逻辑关系，都在本专利的保护范围内；对流程中添加无关紧要的修改或者引入无关紧要的设计，但不改变其流程的核心设计都在该专利的保护范围内。
由于上述实施例与本实施例相互对应，因此本实施例可与上述实施例互相配合实施。上述实施例中提到的相关技术细节在本实施例中 依然有效，在上述实施例中所能达到的技术效果在本实施例中也同样可以实现，为了减少重复，这里不再赘述。相应地，本实施例中提到的相关技术细节也可应用在上述实施例中。
本领域的普通技术人员可以理解，上述各实施例是实现本申请的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本申请的精神和范围。

Claims (20)

  1. 一种制程设备，包括：
    反应室，用于对置于所述反应室中的晶圆进行表面处理工艺，所述表面处理工艺用于去除晶圆表面的污染层；
    承载台，位于所述反应室内，用于承载晶圆或载板；
    所述反应室上具有第一进气通道和第二进气通道；
    所述第一进气通道用于向所述反应室内通入反应气体，所述反应气体用于执行所述表面处理工艺；
    在两次所述表面处理工艺之间，所述第二进气通道用于向所述反应室内通入清洗气体，所述清洗气体用于清洗所述反应室。
  2. 根据权利要求1所述的制程设备，其中，所述清洗气体包括还原性气体和第一吹扫气体，所述第二进气通道包括：
    第一进气子通道，用于向所述反应室内通入所述还原性气体；
    第二进气子通道，用于向所述反应室内通入所述第一吹扫气体；
    所述第二进气通道用于向所述反应室内通入清洗气体，具体包括：
    所述第一进气子通道向所述反应室内通入所述还原性气体，所述第一进气通道向所述反应室内通入所述反应气体，所述第二进气子通道向所述反应室内通入所述第一吹扫气体。
  3. 根据权利要求2所述的制程设备，其中，还包括：
    控制模块，存储有第一预设时间、第二预设时间和第三预设时间；
    所述控制模块用于执行：
    开启所述第一进气子通道，向所述反应室内通入所述第一预设时间的所述还原性气体；
    关闭所述第一进气子通道并开启所述第一进气通道，向所述反应室内通入所述第二预设时间的所述反应气体；
    关闭所述第一进气通道并开启所述第二进气子通道，向所述反应室内通入所述第三预设时间的所述第一吹扫气体。
  4. 根据权利要求2所述的制程设备，其中，包括：连接所述第一进气通道的第一气体供应模块，所述第一气体供应模块的开启时间为10～15s，通入所述反应气体的流量为4～6sccm/s。
  5. 根据权利要求2所述的制程设备，其中，包括：连接所述第一进气子通道的第二气体供应模块，所述第二气体供应模块的开启时间为25～40s，通入所述还原性气体的流量为6～10sccm/s。
  6. 根据权利要求2所述的制程设备，其中，包括：连接所述第二进气子通道的第三气体供应模块，所述第三气体供应模块的开启时间为6～10s，通入所述第一吹扫气体的流量为6～10sccm/s。
  7. 根据权利要求1所述的制程设备，其中，所述反应室上还具有第三进气通道，完成所述表面处理工艺后从所述反应室取出晶圆的过程中，所述第三进气通道用于采用第二吹扫气体吹扫所述晶圆的表面。
  8. 根据权利要求7所述的制程设备，其中，所述第三进气通道设置在所述反应室的出入阀门上，且所述第三进气通道的出风口与所述反应室的腔壁的夹角为5～35°。
  9. 根据权利要求7所述的制程设备，其中，包括：连接所述第三进气通道的第四气体供应模块，所述第四气体供应模块的开启时间为4～6s，通入所述第二吹扫气体的流量为3～6sccm/s。
  10. 一种制程方法，应用于权利要求1～9任一项所述的制程设备，包括：
    在所述制程设备执行两次表面处理工艺之间，将载板放入所述制程设备的承载台上；
    控制第二进气通道向所述反应室内通入清洗气体且控制第一进气通道向所述反应室内通入反应气体，所述清洗气体用于清洗所述反应室；
    取出所述承载台上的所述载板，完成对所述反应室的清洗。
  11. 根据权利要求10所述的制程方法，其中，所述控制第二进气通道向所述反应室内通入清洗气体且控制第一进气通道向所述反应室内通入反应气体，包括：
    控制第一进气子通道向所述反应室中通入第一预设时间的还原性气体；
    控制第一进气通道向所述反应室中通入第二预设时间的反应气体；
    控制第二进气子通道向所述反应室中通入第三预设时间的第一吹扫气体。
  12. 根据权利要求11所述的制程方法，其中，所述第一预设时间为25～40s，通入所述还原性气体的流量为6～10sccm/s。
  13. 根据权利要求11所述的制程方法，其中，所述第二预设时间为10～15s，通入所述反应气体的流量为4～6sccm/s。
  14. 根据权利要求11所述的制程方法，其中，所述第三预设时间为6～10s，通入所述第一吹扫气体的流量为6～10sccm/s。
  15. 根据权利要求11所述的制程方法，其中，所述还原性气体至少包括氢气。
  16. 根据权利要求11所述的制程方法，其中，所述第一吹扫气体至少包括氮气和惰性气体的其中一种。
  17. 根据权利要求10所述的制程方法，其中，在所述制程设备执行所述表面处理工艺后，从所述反应室取出晶圆的过程中，采用第二吹扫气体吹扫所述晶圆的表面。
  18. 根据权利要求17所述的制程方法，其中，所述第二吹扫气体以与所述反应室腔壁的夹角为5～35°的方向吹向所述晶圆的表面。
  19. 根据权利要求17所述的制程方法，其中，所述第二吹扫气体吹扫所述晶圆表面的时间为4～6s，所述第二吹扫气体的流量为3～6sccm/s。
  20. 根据权利要求17所述的制程方法，其中，所述第二吹扫气体至少包括氮气和惰性气体的其中一种。
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