WO2022153138A1 - 表示装置、表示装置の作製方法、及び電子機器 - Google Patents

表示装置、表示装置の作製方法、及び電子機器 Download PDF

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Publication number
WO2022153138A1
WO2022153138A1 PCT/IB2022/050051 IB2022050051W WO2022153138A1 WO 2022153138 A1 WO2022153138 A1 WO 2022153138A1 IB 2022050051 W IB2022050051 W IB 2022050051W WO 2022153138 A1 WO2022153138 A1 WO 2022153138A1
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Prior art keywords
layer
display device
insulator
transistor
oxide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/IB2022/050051
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
岡崎健一
江口晋吾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2022574857A priority Critical patent/JP7713475B2/ja
Priority to US18/271,914 priority patent/US20240306466A1/en
Publication of WO2022153138A1 publication Critical patent/WO2022153138A1/ja
Anticipated expiration legal-status Critical
Priority to JP2025118542A priority patent/JP2025160250A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • One aspect of the present invention relates to a display device and a method for producing the same.
  • One aspect of the present invention relates to an electronic device.
  • One aspect of the present invention is not limited to the above technical fields.
  • the technical field of one aspect of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition (composition of matter). Therefore, more specifically, the technical fields of one aspect of the present invention disclosed in the present specification include semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, their driving methods, or methods for manufacturing them. Can be given as an example.
  • display devices are expected to be applied to various applications.
  • applications of a large display device include a home television device (also referred to as a television or television receiver), digital signage (electronic signage), PID (Public Information Display), and the like. ..
  • a home television device also referred to as a television or television receiver
  • digital signage electronic signage
  • PID Public Information Display
  • mobile information terminals development of smartphones and tablet terminals equipped with a touch panel is underway.
  • Devices that require a high-definition display device include, for example, virtual reality (VR: Virtual Reality), augmented reality (AR: Augmented Reality), alternative reality (SR: Substitutional Reality), and mixed reality (MR: Mixed Reality). ) Is being actively developed.
  • VR Virtual Reality
  • AR Augmented Reality
  • SR Substitutional Reality
  • MR Mixed Reality
  • a light emitting device having a light emitting element As a display device, for example, a light emitting device having a light emitting element (also referred to as a light emitting device) has been developed.
  • a light emitting element also referred to as an EL element or EL device
  • EL electroluminescence
  • Patent Document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element).
  • One aspect of the present invention is to provide a display device for displaying a high-quality image.
  • one aspect of the present invention is to provide a display device having high light extraction efficiency.
  • one aspect of the present invention is to provide a display device having a high aperture ratio.
  • one aspect of the present invention is to provide a high-definition display device.
  • one aspect of the present invention is to provide a low-priced display device.
  • one aspect of the present invention is to provide a highly reliable display device.
  • one aspect of the present invention is to provide a new display device.
  • one aspect of the present invention is to provide a method for manufacturing a display device for displaying a high-quality image.
  • one aspect of the present invention is to provide a method for manufacturing a display device having high light extraction efficiency.
  • one aspect of the present invention is to provide a method for manufacturing a display device having a high aperture ratio.
  • one aspect of the present invention is to provide a method for manufacturing a high-definition display device.
  • one aspect of the present invention is to provide a method for manufacturing a display device having a simple process.
  • one aspect of the present invention is to provide a method for manufacturing a highly reliable display device.
  • one aspect of the present invention is to provide a method for producing a new display device.
  • One aspect of the present invention includes a first light emitting element, a second light emitting element, and a gap
  • the first light emitting element has a first lower electrode and a first light emitting element on the first lower electrode. It has one EL layer and an upper electrode on the first EL layer
  • the second light emitting element has a second lower electrode, a second EL layer on the second lower electrode, and a second light emitting element. It has an upper electrode on the second EL layer, the first light emitting element and the second light emitting element are adjacent to each other, and the voids are the first lower electrode and the first EL layer and the second.
  • the upper electrode may have a region overlapping the voids.
  • a first protective layer may be provided between the gap and the upper electrode.
  • a second protective layer may be provided on the upper electrode.
  • the first colored layer is provided on the second protective layer so as to have a region overlapping with the first EL layer, and the second is provided so as to have a region overlapping with the second EL layer.
  • a second colored layer is provided on the protective layer of the above, and the first EL layer and the second EL layer have a function of emitting light of the same color, and the first colored layer and the second EL layer have a function of emitting light of the same color.
  • the colored layer may have a function of transmitting light of the same color.
  • a third protective layer is provided so as to have a region in contact with the side surface of the first lower electrode, the side surface of the first EL layer, and the side surface of the void, and the third protective layer is It may have a region where the refractive index is higher than the refractive index of the void.
  • the first light emitting element and the second light emitting element are provided on the insulating layer
  • the upper surface of the insulating layer has a region in contact with the lower surface of the void
  • the upper surface of the insulating layer is the void.
  • the thickness of the insulating layer in the region in contact with the lower surface may be thinner than the thickness of the insulating layer in the region overlapping the first lower electrode and the thickness of the insulating layer in the region overlapping the second lower electrode.
  • the distance between the side surface of the first EL layer and the side surface of the second EL layer may have a region of 1 ⁇ m or less.
  • the distance between the side surface of the first EL layer and the side surface of the second EL layer may have a region of 100 nm or less.
  • the void may have any one or more selected from nitrogen, oxygen, carbon dioxide, and Group 18 elements.
  • the Group 18 element may have any one or more selected from helium, neon, argon, xenon, and krypton.
  • the first transistor and the second transistor are provided, and one of the source and drain of the first transistor is electrically connected to the first lower electrode, and the second transistor is provided.
  • One of the source and drain of the above is electrically connected to the second lower electrode, and the first transistor and the second transistor may each have silicon or metal oxide in the channel forming region. ..
  • An electronic device having a display device and a lens according to an aspect of the present invention is also an aspect of the present invention.
  • one aspect of the present invention includes a first layer serving as a first lower electrode, a second lower electrode, and a third lower electrode, a first EL layer, a second EL layer, and a third.
  • a second layer to be the EL layer of the above is formed in order, and a first opening extending in the first direction is formed in the second layer and the first layer, and the first layer is formed on the second layer.
  • a first upper electrode and a third layer to be the second upper electrode are formed on the first layer, and the third layer, the second layer, and the first layer are formed on the first layer perpendicular to the first direction.
  • a first light emitting element having a first lower electrode, a first EL layer, and a first upper electrode, and a second lower electrode By forming a second opening extending in two directions, a first light emitting element having a first lower electrode, a first EL layer, and a first upper electrode, and a second lower electrode, A second light emitting element having a second EL layer and a second upper electrode, and a third light emitting element having a third lower electrode, a third EL layer, and a first upper electrode are formed. It is a method of manufacturing a display device to be used.
  • a first colored layer having a region overlapping with the first EL layer and a second colored layer having a region overlapping with the second EL layer after the formation of the first to third light emitting elements, a first colored layer having a region overlapping with the first EL layer and a second colored layer having a region overlapping with the second EL layer. And a third colored layer having a region overlapping with the third EL layer, respectively, and the first colored layer and the second colored layer have a function of transmitting light of different colors.
  • the first colored layer and the third colored layer may have a function of transmitting light of the same color.
  • a fourth layer is formed on the second layer and on the first opening after the formation of the first opening and before the formation of the third layer.
  • a first protective layer may be formed in the first opening by removing the fourth layer on the second layer.
  • a second protective layer is formed on the first upper electrode and the second upper electrode so as to cover the second opening. You may.
  • it may have a region in which the length of the second opening in the first direction is 1 ⁇ m or less.
  • it may have a region in which the length of the second opening in the first direction is 100 nm or less.
  • a display device for displaying a high-quality image.
  • a display device having high light extraction efficiency Alternatively, according to one aspect of the present invention, a display device having a high aperture ratio can be provided.
  • one aspect of the present invention can provide a high-definition display device.
  • one aspect of the present invention can provide a low-cost display device.
  • one aspect of the present invention can provide a highly reliable display device.
  • a novel display device can be provided by one aspect of the present invention.
  • one aspect of the present invention it is possible to provide a method for manufacturing a display device that displays a high-quality image.
  • one aspect of the present invention can provide a method for manufacturing a display device having high light extraction efficiency.
  • one aspect of the present invention can provide a method for manufacturing a display device having a high aperture ratio.
  • one aspect of the present invention can provide a method for manufacturing a high-definition display device.
  • one aspect of the present invention can provide a method for manufacturing a display device having a simple process.
  • one aspect of the present invention can provide a highly reliable method for manufacturing a display device.
  • one aspect of the present invention can provide a method for producing a novel display device.
  • FIG. 1A is a perspective view showing a configuration example of a display device.
  • 1B and 1C are cross-sectional views showing a configuration example of a display device.
  • FIG. 2A is a perspective view showing an example of a method for manufacturing a display device.
  • 2B and 2C are cross-sectional views showing an example of a method for manufacturing a display device.
  • FIG. 3A is a perspective view showing an example of a method for manufacturing a display device.
  • 3B and 3C are cross-sectional views showing an example of a method for manufacturing a display device.
  • 4A1 to 4D2 are cross-sectional views showing an example of a method for manufacturing a display device.
  • FIG. 5A is a perspective view showing an example of a method for manufacturing a display device.
  • FIG. 5B and 5C are cross-sectional views showing an example of a method for manufacturing a display device.
  • FIG. 6A is a perspective view showing an example of a method for manufacturing a display device.
  • 6B and 6C are cross-sectional views showing an example of a method for manufacturing a display device.
  • 7A1 to 7B2 are cross-sectional views showing an example of a method for manufacturing a display device.
  • 8A1 to 8B2 are cross-sectional views showing an example of a method for manufacturing a display device.
  • FIG. 9A is a perspective view showing a configuration example of the display device.
  • 9B and 9C are cross-sectional views showing a configuration example of the display device.
  • FIG. 10A is a perspective view showing an example of a method for manufacturing a display device.
  • FIG. 10B and 10C are cross-sectional views showing an example of a method for manufacturing a display device.
  • 11A1 to 11D2 are cross-sectional views showing an example of a method for manufacturing a display device.
  • FIG. 12A is a perspective view showing a configuration example of the display device.
  • 12B and 12C are cross-sectional views showing a configuration example of the display device.
  • 13A1 to 13B2 are cross-sectional views showing an example of a method for manufacturing a display device.
  • 14A and 14B are cross-sectional views showing a configuration example of the display device.
  • 15A and 15B are cross-sectional views showing a configuration example of a display device.
  • FIG. 16 is a cross-sectional view showing a configuration example of the display device.
  • FIG. 17A to 17C are cross-sectional views showing a configuration example of a transistor.
  • FIG. 18 is a cross-sectional view showing a configuration example of the display device.
  • FIG. 19 is a cross-sectional view showing a configuration example of the display device.
  • FIG. 20 is a cross-sectional view showing a configuration example of the display device.
  • FIG. 21A is a block diagram showing a configuration example of the display device.
  • FIG. 21B is a circuit diagram showing a configuration example of pixels.
  • FIG. 22A is a top view showing a configuration example of the transistor.
  • 22B and 22C are cross-sectional views showing a configuration example of a transistor.
  • 23A to 23D are cross-sectional views showing a configuration example of the light emitting element.
  • FIG. 21A is a block diagram showing a configuration example of the display device.
  • FIG. 21B is a circuit diagram showing a configuration example of pixels.
  • FIG. 22A is a top view showing a
  • 24A is a diagram illustrating the classification of the crystal structure of IGZO.
  • FIG. 24B is a diagram illustrating an XRD spectrum of the CAAC-IGZO film.
  • FIG. 24C is a diagram illustrating an ultrafine electron beam diffraction pattern of the CAAC-IGZO film.
  • 25A to 25D are diagrams showing an example of an electronic device.
  • 26A and 26B are diagrams showing an example of an electronic device.
  • the semiconductor device is a device utilizing semiconductor characteristics, and refers to a circuit including a semiconductor element (transistor, diode, photodiode, etc.), a device having the same circuit, and the like. It also refers to all devices that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip having an integrated circuit, and an electronic component in which the chip is housed in a package are examples of semiconductor devices. Further, the storage device, the display device, the light emitting device, the lighting device, the electronic device, and the like are themselves semiconductor devices, and may have the semiconductor device.
  • connection relationship is not limited to the predetermined connection relationship, for example, the connection relationship shown in the figure or text, and other than the connection relationship shown in the figure or text, it is assumed that the connection relationship is disclosed in the figure or text. It is assumed that X and Y are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).
  • an element for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, a display
  • One or more elements, light emitting elements, loads, etc. can be connected between X and Y.
  • the switch has a function of controlling an on state and an off state. That is, the switch is in a conductive state (on state) or a non-conducting state (off state), and has a function of controlling whether or not a current flows.
  • a circuit that enables functional connection between X and Y for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), signal conversion) Circuits (digital-analog conversion circuit, analog-digital conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes the potential level of the signal, etc.), voltage source, current source , Switching circuit, amplification circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplification circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, storage circuit, control circuit, etc.) It is possible to connect one or more to and from. As an example, even if another circuit is sandwiched between X and Y, if the signal output from X is transmitted to Y, it is assumed that X and Y are functionally connected. do.
  • X and Y are electrically connected, it means that X and Y are electrically connected (that is, another element between X and Y). Or when they are connected with another circuit in between) and when X and Y are directly connected (that is, they are connected without sandwiching another element or another circuit between X and Y). If there is) and.
  • the circuit diagram shows that independent components are electrically connected to each other, one component has the functions of a plurality of components.
  • one component has the functions of a plurality of components.
  • the electrical connection in the present specification and the like includes the case where one conductive film has the functions of a plurality of components in combination.
  • the “node” can be paraphrased as a terminal, a wiring, an electrode, a conductive layer, a conductor, an impurity region, or the like, depending on a circuit configuration, a device structure, or the like.
  • terminals, wiring, etc. can be paraphrased as "nodes”.
  • ground potential ground potential
  • potentials are relative, and when the reference potential changes, the potential given to the wiring, for example, the potential applied to the circuit, or the potential output from the circuit also changes.
  • the ordinal numbers “first”, “second”, and “third” are added to avoid confusion of the components. Therefore, the number of components is not limited. Moreover, the order of the components is not limited. For example, the component referred to in “first” in one of the embodiments of the present specification and the like is defined as the component referred to in “second” in other embodiments or claims. It is possible. Further, for example, the component mentioned in “first” in one of the embodiments of the present specification and the like may be omitted in other embodiments, claims, and the like.
  • Electrode may be used as part of a “wiring” and vice versa.
  • the term “electrode” or “wiring” also includes a case where a plurality of “electrodes” or “wiring” are integrally formed.
  • a “terminal” may be used as part of a “wiring” or “electrode” and vice versa.
  • the term “terminal” includes, for example, a case where a plurality of "electrodes", “wiring”, “terminals” and the like are integrally formed.
  • the "electrode” can be a part of the “wiring” or the “terminal”, and for example, the “terminal” can be a part of the “wiring” or the “electrode”.
  • terms such as “electrode”, “wiring”, and “terminal” may be replaced with terms such as "region” in some cases.
  • parallel means a state in which two straight lines are arranged at an angle of ⁇ 10 ° or more and 10 ° or less. Therefore, the case of ⁇ 5 ° or more and 5 ° or less is also included.
  • substantially parallel or approximately parallel means a state in which two straight lines are arranged at an angle of ⁇ 30 ° or more and 30 ° or less.
  • vertical means a state in which two straight lines are arranged at an angle of 80 ° or more and 100 ° or less. Therefore, the case of 85 ° or more and 95 ° or less is also included.
  • substantially vertical or “approximately vertical” means a state in which two straight lines are arranged at an angle of 60 ° or more and 120 ° or less.
  • a metal oxide is a metal oxide in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as Oxide Semiconductor or simply OS) and the like. For example, when a metal oxide is used for the semiconductor layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide can form a channel forming region of a transistor having at least one of an amplification action, a rectifying action, and a switching action, the metal oxide can be referred to as a metal oxide semiconductor. can. Further, when the term "OS transistor" is used, it can be rephrased as a transistor having a metal oxide or an oxide semiconductor.
  • a metal oxide having nitrogen may also be collectively referred to as a metal oxide. Further, a metal oxide having nitrogen may be referred to as a metal oxynitride.
  • the configuration shown in each embodiment can be appropriately combined with the configuration shown in other embodiments to form one aspect of the present invention. Further, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined with each other.
  • the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to its size or aspect ratio.
  • the drawings schematically show ideal examples, and are not limited to the shapes or values shown in the drawings. For example, it is possible to include variations in the signal, voltage, or current due to noise, or variations in the signal, voltage, or current due to timing deviation.
  • One aspect of the present invention relates to a display device in which pixels having a light emitting element such as an organic EL element are arranged in a matrix.
  • the light emitting elements provided in the adjacent pixels are separated from each other by a gap containing a gas such as air.
  • the light emitted by the light emitting element in the oblique direction can be totally reflected by the voids. As a result, it is possible to prevent the light emitted by the light emitting element from entering the adjacent pixels.
  • FIG. 1A is a cross-sectional view showing a configuration example of the display device 10.
  • FIG. 1B is a cross-sectional view in the x direction showing a configuration example of the display device 10.
  • FIG. 1C is a cross-sectional view in the y direction showing a configuration example of the display device 10.
  • the scale of the cross-sectional view in the x direction shown in FIG. 1B is different from the scale of the cross-sectional view in the y direction shown in FIG. 1C.
  • the scale of the cross-sectional view in the x direction and the scale of the cross-sectional view in the y direction may be different.
  • the height direction of the display device 10 is defined as the z direction, and the directions perpendicular to the z direction are defined as the x direction and the y direction. Further, it is assumed that the x direction and the y direction are perpendicular to each other. Further, it is assumed that the xy plane, the yz plane, and the zx plane are perpendicular to each other.
  • the display device 10 includes an insulating layer 61, a light emitting element 20 on the insulating layer 61, a protective layer 31, a protective layer 32, a protective layer 33 on the protective layer 31, and a microlens array 35 on the protective layer 33.
  • the microlens array 35, the colored layer 49R, the colored layer 49G, the colored layer 49B, and the light-shielding layer 43 are bonded to each other by the adhesive layer 41.
  • elements other than the light emitting element 20 are omitted for the sake of clarity.
  • the term “element” may be paraphrased as “device”.
  • the light emitting element can be called a light emitting device.
  • the light emitting element 20 has a lower electrode 21 on the insulating layer 61, an EL layer 23 on the lower electrode 21, and an upper electrode 25 on the EL layer 23 and the protective layer 32.
  • the EL layer 23 has at least a light emitting layer. Further, the EL layer 23 may have, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
  • the light emitting element 20 can be a top emission type light emitting element.
  • the lower electrode 21 has a function of reflecting visible light
  • the upper electrode 25 has a function of transmitting visible light.
  • the lower electrode 21 has a function as a pixel electrode of the display device 10.
  • the display device 10 has a pixel 50R, a pixel 50G, and a pixel 50B.
  • the pixel 50R is provided with a colored layer 49R
  • the pixel 50G is provided with a colored layer 49G
  • the pixel 50B is provided with a colored layer 49B.
  • the colored layer 49 is provided so as to have a region overlapping the EL layer 23.
  • the EL layer 23 included in the pixel 50R, the EL layer 23 included in the pixel 50G, and the EL layer 23 included in the pixel 50B can emit light of the same color.
  • each of these EL layers 23 can emit white light.
  • the light emitting element 20 may have, for example, a single structure or a tandem structure. Details of the single structure and the tandem structure will be described later.
  • the colored layer 49 can change the hue of the transmitted light.
  • the hue of light transmitted through the colored layer 49R can be red
  • the hue of light transmitted through the colored layer 49G can be green
  • the hue of light transmitted through the colored layer 49B can be blue. Can be done.
  • the colored layer 49 may have a hue of transmitted light such as cyan, magenta, or yellow.
  • the display device 10 By providing the display device 10 with, for example, a colored layer 49R, a colored layer 49G, and a colored layer 49B, full-color display can be performed.
  • the display device 10 may have pixels 50 that are not provided with the colored layer 49, for example.
  • 1A to 1C show a configuration in which pixels 50R, pixels 50G, and pixels 50B are arranged in order in the x direction, and pixels 50 that emit light of the same color are arranged in the y direction.
  • Examples of the material that can be used for the colored layer 49 include a metal material, a resin material, a resin material containing a pigment or a dye, and the like.
  • a light-shielding layer 43 is provided at the boundary between adjacent pixels 50. As a result, it is possible to prevent light of different colors from being mixed, so that the display device 10 can display a high-quality image.
  • the configuration in which the light-shielding layer 43 is provided has been illustrated, but the present invention is not limited to this, and a configuration in which the light-shielding layer 43 is not provided may be used. For example, by overlapping a part of the colored layers 49 provided on the adjacent pixels 50, the display device 10 can be configured not to have the light-shielding layer 43.
  • a provided in adjacent pixels may be simply referred to as adjacent A.
  • the light emitting element 20 provided in the adjacent pixel 50 may be referred to as an adjacent light emitting element 20.
  • the EL layer 23 included in the pixel 50R, the EL layer 23 included in the pixel 50G, and the EL layer 23 included in the pixel 50B may have a function of emitting light of different colors.
  • the EL layer 23 of the pixel 50R has a function of emitting red light
  • the EL layer 23 of the pixel 50G has a function of emitting green light
  • the EL layer 23 of the pixel 50B emits blue light. It may have a function of emitting.
  • the colored layer 49 can be omitted.
  • the EL layer 23 of the pixel 50R, the EL layer 23 of the pixel 50G, and the EL layer 23 of the pixel 50B have a structure in which the light emitting element 20 emits light of different colors, and the light emitting element 20 has an SBS (Side By Side) structure. There is. By making the light emitting element 20 have an SBS structure, the power consumption of the display device 10 can be reduced.
  • SBS Standard By Side
  • the upper electrode 25 can be a different electrode among the light emitting elements 20 arranged in the x direction.
  • the light emitting elements 20 arranged in the y direction can have a common electrode. That is, for example, in the pixel 50 that emits light of the same color, the upper electrode 25 can be common.
  • the protective layer 31 has a region in contact with the upper surface of the insulating layer 61, the side surface of the lower electrode 21, the side surface of the EL layer 23, the side surface of the upper electrode 25, and the upper surface of the upper electrode 25. Specifically, the protective layer 31 has a region in contact with the xy surface of the insulating layer 61, the yz surface of the lower electrode 21, the yz surface of the EL layer 23, the yz surface of the upper electrode 25, and the xy surface of the upper electrode 25. ..
  • the protective layer 32 has a region in contact with the side surface of the lower electrode 21 and the side surface of the EL layer 23. Specifically, the protective layer 32 has a region in contact with the zx surface of the lower electrode 21 and the zx surface of the EL layer 23.
  • the protective layer 31 and the protective layer 32 can be an insulating layer, and for example, a metal oxide film or a metal nitride film can be used.
  • the metal oxide film may be, for example, a layer having aluminum oxide or hafnium oxide.
  • the metal nitride film may be a layer having aluminum nitride or hafnium nitride.
  • the protective layer 31 and the protective layer 32 are layers in which impurities such as water and oxygen are difficult to diffuse.
  • the protective layer 31 and the protective layer 32 are layers capable of capturing (also referred to as gettering) impurities such as water and oxygen. As a result, it is possible to prevent impurities from entering the light emitting element 20, specifically, the EL layer 23, for example. Therefore, the reliability of the display device 10 can be improved.
  • the protective layer 33 is formed on the protective layer 31.
  • the protective layer 33 can be an insulating layer, and for example, oxides, nitrides, or oxynitrides can be used.
  • the oxide may be a layer having silicon oxide, aluminum oxide, or hafnium oxide.
  • the nitride may be a layer having silicon nitride or aluminum nitride.
  • the oxynitride may be a layer having silicon oxide, silicon nitride, aluminum nitride, or aluminum nitride.
  • silicon oxynitride refers to a material having a higher oxygen content than nitrogen as its composition
  • silicon nitride as its composition means a material having a higher nitrogen content than oxygen as its composition. Is shown.
  • aluminum nitride refers to a material having a composition higher in oxygen content than nitrogen
  • aluminum nitride refers to a material having a composition higher in nitrogen content than oxygen. Is shown.
  • the protective layer 33 can be a semiconductor layer, for example, a layer having a metal oxide (also referred to as IGZO) containing In, Ga, and Zn.
  • the protective layer 33 can be a conductive layer, and can have, for example, a conductive material having translucency. Details will be described later, but as the translucent conductive material, for example, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide added with gallium, or graphene is used. Can be done. Further, an oxide conductor can be used as the conductive material having translucency.
  • the protective layer 33 may have a laminated structure of two or more layers.
  • it may be a laminated structure of an insulating layer and a semiconductor layer or a conductive layer, or may be a laminated structure of, for example, a layer having silicon nitride and a layer having a metal oxide.
  • the protective layer 33 may have a two-layer laminated structure in which, for example, the lower layer is a layer having silicon nitride and the upper layer is a layer having a metal oxide.
  • the protective layer 33 is preferably a layer in which impurities such as water and oxygen are difficult to diffuse, or a layer capable of capturing (also referred to as gettering) impurities such as water and oxygen. As a result, it is possible to prevent impurities from entering the EL layer 23. Therefore, the reliability of the display device 10 can be improved.
  • the adjacent lower electrode 21, the EL layer 23, and the upper electrode 25 are separated by the gap 30.
  • the adjacent lower electrode 21 and the EL layer 23 are separated by the gap 30.
  • the protective layer 36 is provided on the gap 30, and the upper electrode 25 is provided on the EL layer 23 and the protective layer 36.
  • the side surface of the protective layer 32 can be in contact with the side surface of the protective layer 36.
  • the protective layer 36 can have the same material as the protective layer 33. That is, the protective layer 36 can have, for example, an oxide, a nitride, or an oxynitride.
  • the protective layer 36 in the display device 10 for example, it is possible to prevent the upper electrode 25 from entering the opening that separates the adjacent light emitting elements 20. Therefore, it can be said that the light emitting element 20 is protected by the protective layer 36.
  • the protective layer 33 and the protective layer 36 are preferably formed by a method having a low covering property, and are preferably formed by a method having a lower covering property than, for example, an atomic layer deposition (ALD) method. ..
  • the protective layer 33 and the protective layer 36 are formed by a sputtering method or a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • the void 30 is preferable. Can be formed into. If the distance between the EL layers 23 is sufficiently short, for example, if the upper electrode 25 does not enter the opening that separates the adjacent light emitting elements 20 even if the protective layer 36 is not provided, the protective layer 36 may not be provided. ..
  • the void 30 has one or more selected from, for example, air, nitrogen, oxygen, carbon dioxide, and Group 18 elements. Further, the void 30 may contain, for example, a protective layer 36 or a gas used when forming the protective layer 33. For example, when the protective layer 36 or the protective layer 33 is formed by a sputtering method, the voids 30 may contain Group 18 elements (typically, helium, neon, argon, xenon, krypton, etc.). be. When the void 30 contains a gas, the gas can be identified by, for example, a gas chromatography method.
  • the gas used at the time of sputtering may be contained in the film of the protective layer 36 or the protective layer 33.
  • the protective layer 36 or the protective layer 33 is analyzed by energy dispersive X-ray analysis (EDX analysis) or the like, an element such as argon may be detected.
  • EDX analysis energy dispersive X-ray analysis
  • the EL layer 23 emits and the light 51 incident on the interface between the EL layer 23 and the void 30 is totally reflected. As a result, it is possible to prevent the light 51 from incident on the adjacent pixels 50. Specifically, for example, it is possible to prevent the light 51 emitted by the EL layer 23 provided on the pixel 50G from entering the pixel 50R or the pixel 50B. As a result, it is possible to prevent light of different colors from being mixed, so that the display device 10 can display a high-quality image.
  • the gap 30 can be configured to enter the insulating layer 61.
  • the thickness of the insulating layer 61 in the region overlapping the void 30 is thinner than the thickness of the insulating layer 61 in the region overlapping the EL layer 23.
  • the thickness of the insulating layer 61 in the region overlapping the gap 30 can be made thinner than the thickness of the insulating layer 61 in the region overlapping the lower electrode 21.
  • the microlens can collect the light emitted by the EL layer 23.
  • the light shielding layer 43 suppressing the color mixing of the light emitted by the EL layer 23. Therefore, the light extraction efficiency of the display device 10 can be improved while the display device 10 displays a high-quality image. Therefore, especially when the user of the display device 10 looks at the display surface from the front of the display surface of the display device 10, a bright image can be visually recognized.
  • Each insulating layer is made of aluminum nitride, aluminum oxide, aluminum nitride, aluminum oxide, magnesium oxide, silicon nitride, silicon oxide, silicon nitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide. , Neodim oxide, Hafnium oxide, Tantal oxide, Aluminum silicate, etc. are used in a single layer or laminated. Further, among the oxide material, the nitride material, the oxide nitride material, and the nitride oxide material, a material obtained by mixing a plurality of materials may be used.
  • the nitride oxide refers to a compound having a higher nitrogen content than oxygen.
  • the oxidative nitride refers to a compound having a higher oxygen content than nitrogen.
  • the content of each element can be measured by using, for example, the Rutherford backscattering method (RBS).
  • the surface of the insulating layer may be subjected to CMP treatment.
  • CMP treatment the unevenness of the sample surface can be reduced, and the coverage of the insulating layer and the conductive layer formed thereafter can be improved.
  • An alloy or the like in which the above-mentioned metal elements are combined can be used.
  • a semiconductor typified by polysilicon containing an impurity element such as phosphorus, or a silicide such as nickel silicide may be used.
  • the method for forming the conductive material is not particularly limited, and various forming methods such as a vapor deposition method, a CVD method, a sputtering method, and a spin coating method can be used.
  • indium tin oxide ITO: Indium Tin Oxide
  • indium oxide containing tungsten oxide indium zinc oxide containing tungsten oxide
  • indium oxide containing titanium oxide Indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide added with silicon oxide and other conductive materials having oxygen can also be used.
  • a conductive material containing nitrogen such as titanium nitride, tantalum nitride, or tungsten nitride can also be used.
  • a laminated structure may be formed in which a conductive material having oxygen, a conductive material containing nitrogen, and a material containing the above-mentioned metal element are appropriately combined.
  • the conductive material that can be used for the conductive layer may be a single-layer structure or a laminated structure having two or more layers.
  • a layer structure There are a layer structure, a two-layer structure in which a tungsten layer is laminated on a tantalum nitride layer, and a three-layer structure in which a titanium layer and an aluminum layer are laminated on the titanium layer, and a titanium layer is further formed on the titanium layer.
  • the conductive material an aluminum alloy containing one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used as the conductive material.
  • the lower electrode 21 is preferably formed by using a conductive material that efficiently reflects the light emitted by the EL layer 23.
  • the structure of the lower electrode 21 is not limited to a single layer, and may be a laminated structure of a plurality of layers.
  • the layer in contact with the EL layer 23 is a layer having translucency such as indium tin oxide, and a layer having high reflectance (aluminum and an alloy containing aluminum) in contact with the layer. , Or silver, etc.) may be provided.
  • the upper electrode 25 using a conductive material having translucency, the light emitted by the EL layer 23 can be efficiently taken out to the outside of the display device 10.
  • the conductive material that reflects visible light examples include metal materials such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or alloys containing these metal materials. Can be used. Further, lanthanum, neodymium, germanium or the like may be added to the above metal material and / or alloy. Also, aluminum-titanium alloys, aluminum-nickel alloys, or aluminum-containing alloys such as aluminum-neodim alloys (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, or silver-magnesium alloys. It can be formed by using an alloy containing silver such as an alloy.
  • Alloys containing silver and copper are preferred because they have high heat resistance.
  • a metal film or an alloy film and a metal oxide film may be laminated. For example, by laminating a metal film or a metal oxide film so as to be in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed.
  • Other examples of the metal film and the metal oxide film include titanium, titanium oxide and the like.
  • a light-transmitting conductive film and a film made of a metal material may be laminated. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, and the like can be used.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide added with gallium or graphene can be used.
  • an oxide conductor can be applied as the conductive material having translucency.
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, and an alloy material containing the metal material can be used.
  • a nitride of the metal material for example, titanium nitride
  • the like may be used.
  • the laminated film of the above material can be used as the conductive layer.
  • a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be enhanced.
  • conductive layers such as various wirings and electrodes constituting the display device, and conductive layers (conductive layers that function as lower electrodes or upper electrodes) of the light emitting element.
  • oxide conductor which is a kind of metal oxide
  • the oxide conductor may be referred to as OC (Oxide Conductor).
  • OC Oxide Conductor
  • the oxide conductor for example, when an oxygen deficiency is formed in a metal oxide (typically IGZO) which is an oxide containing at least indium or zinc and hydrogen is added to the oxygen deficiency, a donor is provided in the vicinity of the conduction band. Levels are formed. As a result, the metal oxide becomes highly conductive and becomes a conductor. A metal oxide that has been made into a conductor can be called an oxide conductor.
  • IGZO metal oxide
  • a metal oxide that has been made into a conductor can be called an oxide conductor.
  • a metal oxide (oxide semiconductor) having a function as a semiconductor has a large energy gap, and therefore has translucency with respect to visible light.
  • the oxide conductor is a metal oxide having a donor level in the vicinity of the conduction band. Therefore, the oxide conductor is less affected by absorption by the donor level and has the same level of translucency as the oxide semiconductor with respect to visible light.
  • the EL layer 23 has at least a light emitting layer. Further, as a layer other than the light emitting layer, the EL layer 23 is a substance having a high hole injecting property, a substance having a high hole transporting property, a hole blocking material, a substance having a high electron transporting property, a substance having a high electron injecting property, or a substance having a high electron injecting property. It may have a layer containing a bipolar substance (a substance having high electron transport property and hole transport property) and the like.
  • Either a low molecular weight compound or a high molecular weight compound can be used for the EL layer 23, and an inorganic compound may be contained.
  • the layers constituting the EL layer 23 can be formed by a method such as a thin-film deposition method (including a vacuum thin-film deposition method), a transfer method, a printing method, or a coating method, respectively.
  • the EL layer 23 may have an inorganic compound such as a quantum dot. For example, by using quantum dots in the light emitting layer, it can function as a light emitting material.
  • the electron transport layer has a compound (electron transport material) that easily receives electrons.
  • the electron-transporting material include an oxadiazole derivative, a triazole derivative, a benzimidazole derivative, a quinoxalin derivative, a dibenzoquinoxalin derivative, a phenanthroline derivative and the like.
  • the electron injecting layer has a material having high electron injecting property (electron injecting material).
  • the electron-injectable material include lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8- (quinolinolato) lithium (abbreviation: Liq), 2- (2-pyridyl).
  • LiPP Phenolatrithium
  • 2- (2-pyridyl) -3-pyridinoratlithium abbreviation: LiPPy
  • LiPPP 4-phenyl-2- (2-pyridyl) phenoratrilithium
  • Alkali metals such as LiOx, cesium carbonate and the like, alkaline earth metals, or compounds thereof can be used.
  • Adhesive layer 41 various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable type adhesive, a thermosetting type adhesive, or an anaerobic type adhesive can be used.
  • these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin and the like. ..
  • a material having low moisture permeability such as epoxy resin is preferable.
  • a two-component mixed type resin may be used.
  • an adhesive sheet may be used.
  • the light-shielding layer examples include carbon black, titanium black, metal, metal oxide, and a composite oxide containing a solid solution of a plurality of metal oxides.
  • the light-shielding layer may be a film containing a resin material or a thin film of an inorganic material such as metal.
  • a laminated film of a film containing a material of a colored layer can also be used.
  • a laminated structure of a film containing a material used for a colored layer that transmits light of a certain color and a film containing a material used for a colored layer that transmits light of another color can be used.
  • the insulating layer and semiconductor layer constituting the display device, as well as the electrode, the conductive layer for forming the wiring, and the like are classified by a sputtering method, a CVD method, a vacuum vapor deposition method, a pulsed laser deposition (PLD) method, or the like. It can be formed by using an ALD method, a plasma ALD (PEALD: Plasma Enhanced ALD) method, or the like.
  • the CVD method may be a plasma chemical vapor deposition (PECVD) method or a thermal CVD method.
  • PECVD plasma chemical vapor deposition
  • MOCVD organometallic chemical vapor deposition
  • the insulating layer, semiconductor layer, electrode, conductive layer for forming wiring, etc. that constitute the display device are spin-coated, dip, spray-coated, inkjet, dispense, screen printing, offset printing, slit coating, rolls, etc. It may be formed by a method such as a coat, a curtain coat, or a knife coat.
  • the PECVD method provides a high quality film at a relatively low temperature.
  • a film forming method that does not use plasma during film formation such as a MOCVD method, an ALD method, or a thermal CVD method
  • damage to the surface to be formed is unlikely to occur.
  • wiring, electrodes, elements (transistors, capacitive elements, etc.) and the like included in a semiconductor device may be charged up by receiving electric charges from plasma. At this time, the accumulated electric charge may destroy the wiring, electrodes, elements, etc. contained in the semiconductor device.
  • the film forming method that does not use plasma such plasma damage does not occur, so that the yield of the semiconductor device can be increased. Further, since plasma damage does not occur during film formation, a film having few defects can be obtained.
  • the film formation temperature is preferably room temperature or higher and 500 ° C. or lower, more preferably room temperature or higher and 300 ° C. or lower, and further preferably room temperature or higher and 200 ° C. or lower.
  • the oxygen gas and argon gas used as the sputtering gas are gases having a dew point of -40 ° C or lower, preferably -80 ° C or lower, more preferably -100 ° C or lower, and more preferably -120 ° C or lower. By using it, it is possible to prevent water and the like from being taken into the oxide semiconductor film as much as possible.
  • oxygen can be supplied to the cambium by using a sputtering gas containing oxygen.
  • the layer (thin film) constituting the display device When processing the layer (thin film) constituting the display device, it can be processed by using, for example, a photolithography method. Alternatively, an island-shaped layer may be formed by a film forming method using a shielding mask. Alternatively, the layer may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • a photolithography method a resist mask is formed on a layer (thin film) to be processed, a resist mask is used as a mask, a part of the layer (thin film) is selectively removed, and then the resist mask is removed.
  • a method and a method in which a layer having photosensitivity is formed, and then exposure and development are performed to process the layer into a desired shape.
  • i-line wavelength 365 nm
  • g-line wavelength 436 nm
  • h-line wavelength 405 nm
  • the exposure may be performed by the immersion exposure technique.
  • extreme ultraviolet light EUV: Extreme Ultra-violet
  • X-rays an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible.
  • extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible.
  • a dry etching method, a wet etching method, or the like can be used for removing (etching) the layer (thin film). Moreover, you may use these etching methods in combination.
  • a layer 21A to be a lower electrode 21 and a layer 23A to be an EL layer 23 are formed on the insulating layer 61 in order (FIGS. 2A to 2A). 2C).
  • the layer 21A and the layer 23A can be formed into a film by, for example, a vapor deposition method, a sputtering method, or the like. Not limited to this, the above-mentioned film forming method can be appropriately used.
  • the terms “layer” and “membrane” can be used interchangeably as appropriate.
  • the “layer” of the layer 21A and the layer 23A can be referred to as a "film”.
  • the layer 21A and the layer 23A are processed by using, for example, an etching method. Specifically, for example, after forming a resist mask on the layer 23A, the layer 23A and the layer 21A are processed by, for example, an etching method to form an opening 150A extending in the x direction. By processing the layer 23A, a band-shaped layer 23B extending in the x direction is formed, and by processing the layer 21A, a band-shaped layer 21B extending in the x direction is formed (FIGS. 3A to 3C).
  • the width of the opening 150A may be 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm. can.
  • the insulating layer 61 may also be etched when the etching is performed. As a result, the thickness of the insulating layer 61 in the region overlapping the opening 150A may be thinner than the thickness of the insulating layer 61 in the region overlapping the layer 21B.
  • a layer 32A to be a protective layer 32 is formed (FIGS. 4A1 and 4A2).
  • the layer 32A is preferably formed by using a film forming method having high coating properties such as the ALD method.
  • the layer 32A is formed so as to cover the opening 150A. That is, the layer 32A is formed so as to have a region in contact with the side surface of the layer 23B, the side surface of the layer 21B, and the upper surface of the insulating layer 61 at the opening 150A.
  • layer 32A is processed. Specifically, the layer 32A on the layer 23B is removed. For example, the layer 32A is etched using the layer 23B as an etching stopper. As a result, the protective layer 32 is formed in the opening 150A (FIGS. 4B1 and 4B2).
  • the layer 36A to be the protective layer 36 is formed.
  • the layer 36A is preferably formed by a method having a low covering property, and is preferably formed by a method having a lower covering property than the method of forming the layer 32A, for example.
  • the layer 36A is formed by a sputtering method or a CVD method. As a result, the opening 150A is not covered by the layer 36A, and a gap 30 is formed (FIGS. 4C1 and 4C2).
  • layer 36A is processed. Specifically, the layer 36A on the layer 23B is removed. For example, the layer 36A is etched using the layer 23B as an etching stopper. As a result, the protective layer 36 is formed (FIGS. 4D1 and 4D2).
  • a layer 25A to be the upper electrode 25 is formed (FIGS. 5A to 5C).
  • the layer 25A can be formed by, for example, a vapor deposition method, a sputtering method, or the like. Not limited to this, the above-mentioned film forming method can be appropriately used.
  • the layer 25A, the layer 23B, and the layer 21B are processed by using, for example, an etching method. Specifically, for example, after forming a resist mask on the layer 25A, the layer 25A, the layer 23B, and the layer 21B are processed by, for example, an etching method to form an opening 150B extending in the y direction. ..
  • an etching method to form an opening 150B extending in the y direction.
  • a band-shaped upper electrode 25 extending in the y direction is formed.
  • the layer 23B the island-shaped EL layer 23 is formed, and by processing the layer 21B, the island-shaped lower electrode 21 is formed.
  • the light emitting element 20 is formed (FIGS. 6A to 6C).
  • the width of the opening 150B may be 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm. can.
  • the insulating layer 61 may also be etched when the etching is performed. As a result, the thickness of the insulating layer 61 in the region overlapping the opening 150B may be thinner than the thickness of the insulating layer 61 in the region overlapping the lower electrode 21.
  • one aspect of the present invention can be a method for manufacturing a display device with high productivity.
  • the distance between the adjacent light emitting elements 20 can be reduced to 20 ⁇ m or less.
  • the distance between adjacent EL layers 23 can be set to 20 ⁇ m or less.
  • the distance between adjacent light emitting elements 20 can be 0.5 ⁇ m or more and 15 ⁇ m or less, preferably 0.5 ⁇ m or more and 10 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 5 ⁇ m or less. Therefore, it is possible to improve the pixel aperture ratio, increase the definition, reduce the size, and the like.
  • a metal mask or a device using an FMM may be referred to as an MM (metal mask) structure.
  • MM metal mask
  • MML metal maskless
  • the distance between the light emitting elements 20 is 100 nm or less, typically 90 nm or less, it is necessary to use an optimum exposure apparatus.
  • the exposure device for example, a stepper, a scanner, or the like can be used.
  • the wavelengths of the light sources that can be used in the exposure apparatus are 13 nm (EUV), 157 nm (F2), 193 nm (ArF), 248 nm (KrF), 308 nm (XeCl), 365 nm (i-line), and 436 nm (g). Line) and the like.
  • the protective layer 31 is formed (FIGS. 7A1 and 7A2).
  • the protective layer 31 is preferably formed by using a film forming method having high coating properties such as the ALD method.
  • the protective layer 31 is formed so as to cover the opening 150B. That is, the protective layer 31 is formed so as to have a region in the opening 150B that is in contact with the side surface of the upper electrode 25, the side surface of the EL layer 23, the side surface of the lower electrode 21, and the upper surface of the insulating layer 61.
  • the protective layer 33 is formed.
  • the protective layer 33 is preferably formed by a method having a low covering property, and for example, it is preferably formed by a method having a lower covering property than the method of forming the protective layer 31.
  • the protective layer 33 is formed by a sputtering method or a CVD method. As a result, the opening 150B is not covered with the protective layer 33, and a gap 30 is formed (FIGS. 7B1 and 7B2).
  • the microlens array 35 is formed on the protective layer 33 (FIGS. 8A1 and 8A2).
  • the microlens array 35 can be formed by, for example, forming a resist pattern by a photolithography method and then performing heat treatment to reflow the resist.
  • the substrate 47 is prepared, the insulating layer 45 is formed on the substrate 47, the light-shielding layer 43 is formed on the insulating layer 45, and then the colored layer 49R and the colored layer are formed on the insulating layer 45 and the light-shielding layer 43.
  • 49G and a colored layer 49B are formed (FIGS. 8B1 and 8B2).
  • an adhesive layer 41 is formed on the colored layer 49R, the colored layer 49G, the colored layer 49B, and the light-shielding layer 43, and the microlens array 35, the colored layer 49, and the light-shielding layer 43 are attached by the adhesive layer 41. to paste together.
  • the adhesive layer 41 can be formed by a screen printing method, a dispensing method, or the like. From the above, the display device 10 shown in FIGS. 1A to 1C can be manufactured.
  • FIG. 9A is a perspective view showing a configuration example of the display device 10.
  • FIG. 9B is a cross-sectional view in the x direction showing a configuration example of the display device 10.
  • FIG. 9C is a cross-sectional view in the y direction showing a configuration example of the display device 10.
  • the display device 10 shown in FIGS. 9A to 9C is a modification of the display device 10 shown in FIGS. 1A to 1C.
  • the display device 10 shown in FIGS. 9A to 9C uses a common upper electrode 25 not only among the light emitting elements 20 arranged in the y direction but also among the light emitting elements 20 arranged in the x direction. It is different from the display device 10 shown in 1A to 1C. That is, in the display device 10 shown in FIGS. 9A to 9C, it can be said that the upper electrode 25 is a common electrode.
  • the display device 10 shown in FIGS. 9A to 9C does not have the protective layer 31 and the protective layer 33, but has the protective layer 34.
  • the protective layer 34 is provided on the upper electrode 25. Further, the microlens array 35 is provided on the protective layer 34.
  • the protective layer 34 can have the same material as the protective layer 33, and can be formed by using the same film forming method as the protective layer 33.
  • the protective layer 36 is provided on the gap 30 as in the case of viewing the cross section in the y direction, and the protective layer 36 is provided on the EL layer 23.
  • the upper electrode 25 is provided on the protective layer 32 and on the protective layer 36.
  • a layer to be the lower electrode 21 and a layer to be the EL layer 23 are formed on the insulating layer 61 in order.
  • these layers are processed by, for example, an etching method to form an opening 150 extending in the x-direction and the y-direction.
  • the island-shaped EL layer 23 and the island-shaped lower electrode 21 are formed (FIGS. 10A to 10C).
  • the width of the opening 150 may be 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm. can.
  • the insulating layer 61 may also be etched when the etching is performed. As a result, the thickness of the insulating layer 61 in the region overlapping the opening 150 may be thinner than the thickness of the insulating layer 61 in the region overlapping the lower electrode 21.
  • a layer 32A to be a protective layer 32 is formed (FIGS. 11A1 and 11A2).
  • the layer 32A is preferably formed by using a film forming method having high coating properties such as the ALD method.
  • the layer 32A is formed so as to cover the opening 150. That is, the layer 32A is formed so as to have a region in contact with the side surface of the EL layer 23, the side surface of the lower electrode 21, and the upper surface of the insulating layer 61 at the opening 150.
  • layer 32A is processed. Specifically, the layer 32A on the EL layer 23 is removed.
  • the EL layer 23 is used as an etching stopper to etch the layer 32A.
  • the protective layer 32 is formed in the opening 150 (FIGS. 11B1 and 11B2).
  • the layer 36A to be the protective layer 36 is formed.
  • the layer 36A is preferably formed by a method having a low covering property, and is preferably formed by a method having a lower covering property than the method of forming the layer 32A, for example.
  • the layer 36A is formed by a sputtering method or a CVD method. As a result, the opening 150 is not covered by the layer 36A, and a gap 30 is formed (FIGS. 11C1 and 11C2).
  • layer 36A is processed. Specifically, the layer 36A on the EL layer 23 is removed.
  • the EL layer 23 is used as an etching stopper to etch the layer 36A.
  • the protective layer 36 is formed (FIGS. 11D1 and 11D2).
  • the upper electrode 25 is formed into a film (FIGS. 12A to 12C).
  • the protective layer 34 is formed (FIGS. 13A1 and 13A2).
  • the protective layer 34 can be formed by, for example, a CVD method, a sputtering method, or an ALD method.
  • the microlens array 35 is formed on the protective layer 34 (FIGS. 13B1 and 13B2).
  • the substrate 47 is prepared, the insulating layer 45 is formed on the substrate 47, the light-shielding layer 43 is formed on the insulating layer 45, and then the colored layer 49R and the colored layer are formed on the insulating layer 45 and the light-shielding layer 43. It forms 49G and a colored layer 49B.
  • an adhesive layer 41 is formed on the colored layer 49R, the colored layer 49G, the colored layer 49B, and the light-shielding layer 43, and the microlens array 35, the colored layer 49, and the light-shielding layer 43 are attached by the adhesive layer 41. to paste together. From the above, the display device 10 shown in FIGS. 9A to 9C can be manufactured.
  • FIGS. 14A and 14B are cross-sectional views showing a configuration example of the display device 10, and are modifications of the display device 10 shown in FIGS. 1B and 1C.
  • the display device 10 shown in FIGS. 14A and 14B is different from the display device 10 shown in FIGS. 1B and 1C in that the display device 10 does not have the microlens array 35.
  • the perspective view of FIG. 1A can be referred to.
  • the manufacturing process of the display device 10 can be simplified. Therefore, the manufacturing cost of the display device 10 can be lowered and the yield can be increased. From the above, the price of the display device 10 can be reduced.
  • FIGS. 15A and 15B are cross-sectional views showing a configuration example of the display device 10, and are modifications of the display device 10 shown in FIGS. 1B and 1C.
  • the display device 10 shown in FIGS. 15A and 15B is different from the display device 10 shown in FIGS. 1B and 1C in that the partition wall 37 is provided on the insulating layer 61.
  • the partition wall 37 can be, for example, an insulating layer.
  • the perspective view of FIG. 1A can be referred to.
  • the partition wall 37 is provided between the adjacent pixels 50 and is provided so as to cover the end portion of the lower electrode 21.
  • the EL layer 23 is provided on the lower electrode 21 and the partition wall 37, and the protective layer 31 is provided on the upper electrode 25 and the partition wall 37.
  • the EL layer 23 does not have to have a region overlapping with the partition wall 37.
  • the partition wall 37 By providing the partition wall 37, for example, an electrical short circuit that may occur between adjacent lower electrodes 21 can be suppressed.
  • the aperture ratio of the pixels can be increased, and for example, it can be 70% or more, preferably 80% or more, and more preferably 90% or more.
  • the gap 30 can be configured to enter the partition wall 37.
  • FIG. 16 is a cross-sectional view showing a configuration example of the display device 10.
  • FIG. 16 is a cross-sectional view showing a configuration example of a layer below the insulating layer 61 of the display device 10 shown in FIG. 1B.
  • the display device 10 has a transistor 80 on the substrate 81 and an element separation layer 86. Further, an insulating layer 131, an insulating layer 133, an insulating layer 135, and an insulating layer 137 are provided on the substrate 81.
  • the display device 10 has an insulating layer 71 on the insulating layer 137 and an insulating layer 61 on the insulating layer 71.
  • FIG. 16 illustrates a configuration in which the insulating layer 71 is provided, but the present invention is not limited to this.
  • the insulating layer 61 may be provided so as to have a region in contact with the upper surface of the insulating layer 137 without providing the insulating layer 71.
  • the display device 10 has a conductive layer 67, a conductive layer 69, a conductive layer 63, and a conductive layer 65.
  • the conductive layer 67 is embedded in the insulating layer 131, the insulating layer 133, the insulating layer 135, and the insulating layer 137, and the conductive layer 69 is embedded in the insulating layer 71.
  • the conductive layer 63 and the conductive layer 65 are embedded in the insulating layer 61.
  • the height of the conductive layer 67 and the height of the insulating layer 137 can be made the same, and the height of the conductive layer 69 and the height of the insulating layer 71 can be made the same.
  • the light emitting element 20 and the transistor 80 are provided in a laminated manner.
  • the layer on which the light emitting element 20 is provided is referred to as a layer 121
  • the layer on which the transistor 80 is provided is referred to as a layer 125.
  • the transistor 80 is provided in each of the pixel 50R, the pixel 50G, and the pixel 50B.
  • One of the source and drain of the transistor 80 is electrically connected to the lower electrode 21 via the conductive layer 67, the conductive layer 69, the conductive layer 63, and the conductive layer 65.
  • the conductive layer 69 has a function as a plug for electrically connecting the conductive layer 67 and the conductive layer 63, for example.
  • the conductive layer 65 has a function as a plug for electrically connecting the conductive layer 63 and the lower electrode 21, for example.
  • the layer 125 may be provided with a transistor included in a drive circuit such as a scanning line drive circuit.
  • the transistor 80 can be a transistor (Si transistor) having silicon in the channel forming region.
  • the silicon contained in the Si transistor can be single crystal silicon, polycrystalline silicon (polysilicon), amorphous silicon (amorphous silicon), or the like.
  • the channel forming region of the transistor 80 is preferably formed of single crystal silicon.
  • the transistor 80 has a conductive layer 82 having a function as a gate electrode, an insulating layer 83 having a function as a gate insulating layer, and a part of a substrate 81. Further, the transistor 80 has a low resistance region 85a having a function as one of a semiconductor region including a channel forming region, a source region or a drain region, and a low resistance region 85b having a function as the other of the source region or the drain region. ..
  • the transistor 80 may be either a p-channel type or an n-channel type. Alternatively, the transistor 80 may be a so-called CMOS (Complementary Metal Oxide Transistor) transistor in which an n-channel type transistor and a p-channel type transistor are combined.
  • CMOS Complementary Metal Oxide Transistor
  • the transistor 80 is electrically separated from other transistors by the element separation layer 86.
  • FIG. 16 shows a case where the transistors 80 are electrically separated from each other by the element separation layer 86.
  • the element separation layer 86 can be formed by using a LOCOS (LOCOS Origination of Silicon) method, an STI (Shallow Trench Isolation) method, or the like.
  • FIG. 17A is a cross-sectional view showing a configuration example of the transistor 80 shown in FIG. 16 in the channel width direction (A1-A2 direction).
  • the transistor 80 has a convex semiconductor region. Further, the side surface and the upper surface of the semiconductor region are provided so as to be covered with the conductive layer 82 via the insulating layer 83. A material for adjusting the work function can be used for the conductive layer 82.
  • Transistors having a convex shape in the semiconductor region are called fin-type transistors because they utilize the convex portion of the semiconductor substrate.
  • it may have an insulator which is in contact with the upper part of the convex portion and has a function as a mask for forming the convex portion.
  • FIG. 16 shows a configuration in which a part of the substrate 81 is processed to form a convex portion
  • an SOI (Silicon On Insulator) substrate may be processed to form a semiconductor having a convex shape.
  • FIG. 17B and 17C are cross-sectional views showing a configuration example of the transistor 80 in the channel length direction, and is a modification of the transistor 80 shown in FIG.
  • the transistor 80 shown in FIG. 17B is different from the transistor 80 shown in FIG. 16 in that it is a planar type transistor.
  • the configuration shown in FIG. 17C is different from the configuration shown in FIG. 16 in that the insulating layer 88 is provided on the substrate 81 and the transistor 80 is provided on the insulating layer 88.
  • the transistor 80 shown in FIG. 17C has a semiconductor layer 87.
  • the semiconductor layer 87 can be a thin film, for example, a thin film having silicon.
  • the semiconductor layer 87 can be a thin film having amorphous silicon or low-temperature polysilicon.
  • the semiconductor layer 87 can be a single crystal silicon (SOI) formed on the insulating layer 88.
  • SOI single crystal silicon
  • the insulating layer 131, the insulating layer 133, the insulating layer 135, the insulating layer 137, and the insulating layer 71 have a function as an interlayer film. Further, the insulating layer 131, the insulating layer 133, the insulating layer 135, the insulating layer 137, and the insulating layer 71 may have a function as a flattening layer that covers the uneven shape below each of them.
  • the materials used for the substrate 81 and the substrate 47 there are no major restrictions on the materials used for the substrate 81 and the substrate 47. Depending on the purpose, it may be determined in consideration of the presence or absence of translucency and the heat resistance to the extent that it can withstand heat treatment.
  • glass substrates such as barium borosilicate glass and aluminoborosilicate glass, ceramic substrates, quartz substrates, sapphire substrates, and the like can be used.
  • a semiconductor substrate, a flexible substrate (flexible substrate), a laminated film, a base film, or the like may be used.
  • the semiconductor substrate examples include a semiconductor substrate made of silicon, germanium, or the like, or a compound semiconductor substrate made of silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, or gallium oxide. .. Further, the semiconductor substrate may be a single crystal semiconductor or a polycrystalline semiconductor.
  • a flexible substrate flexible substrate
  • a bonding film a base film, or the like may be used for the substrate 81 and the substrate 47.
  • polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, and poly.
  • Methyl methacrylate resin polycarbonate (PC) resin, polyether sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin , Polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofibers and the like can be used.
  • a lightweight display device can be provided. Further, by using the above material as the substrate, it is possible to provide a display device that is strong against impact. Further, by using the above material as the substrate, it is possible to provide a display device that is not easily damaged.
  • the flexible substrate used for the substrate 81 and the substrate 47 As for the flexible substrate used for the substrate 81 and the substrate 47, the lower the coefficient of linear expansion, the more the deformation due to the environment is suppressed, which is preferable.
  • the flexible substrate used for the substrate 81 and the substrate 47 is made of, for example, a material having a linear expansion coefficient of 1 ⁇ 10 -3 / K or less, 5 ⁇ 10 -5 / K or less, or 1 ⁇ 10 -5 / K or less. It may be used.
  • aramid is preferable as a flexible substrate because of its low coefficient of linear expansion.
  • FIG. 18 is a cross-sectional view showing a configuration example of the display device 10, and is a modification of the display device 10 shown in FIG.
  • the display device 10 shown in FIG. 18 is different from the display device 10 shown in FIG. 16 in that a layer 123 is provided between the layers 121 and 125.
  • a transistor 70 is provided on the layer 123.
  • the transistor 70 is provided in each of the pixel 50R, the pixel 50G, and the pixel 50B.
  • one of the source and drain of the transistor 70 is electrically connected to the lower electrode 21 via the conductive layer 63 and the conductive layer 65.
  • the transistor 70 can be a transistor (OS transistor) having a metal oxide in the channel forming region.
  • the metal oxide contained in the OS transistor preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. Moreover, in addition to them, it is preferable that aluminum, gallium, yttrium, tin and the like are contained. Further, one or more kinds selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt and the like may be contained.
  • FIG. 19 is a cross-sectional view showing a configuration example of the display device 10.
  • FIG. 19 shows a sealing material 91, a connection electrode 93, an anisotropic conductive layer 95, an FPC (Flexible Printed Circuit) 97, and the like. Is shown.
  • the substrate 47 and the insulating layer 61 are bonded to each other by the sealing material 91.
  • a connection electrode 93 is provided on the insulating layer 61 and the conductive layer 65 so as to be electrically connected to one of the source and drain of the transistor 80.
  • the anisotropic conductive layer 95 is provided on the connection electrode 93
  • the FPC 97 is provided on the anisotropic conductive layer 95.
  • various signals are supplied to the display device 10 from the outside of the display device 10 by the FPC 97.
  • the sealing material 91 may be omitted, and the FPC 97 may be wire bonded.
  • FIG. 20 is a cross-sectional view showing a configuration example of the display device 10, and is a modification of the display device 10 shown in FIG.
  • the display device 10 shown in FIG. 20 is different from the display device 10 shown in FIG. 19 in that it has a transistor 70 which can be, for example, an OS transistor.
  • FIG. 21A is a block diagram showing a configuration example of the display device 10.
  • the display device 10 includes a display unit 100, a scanning line drive circuit 101, and a data line drive circuit 103. Pixels 50 are arranged in a matrix on the display unit 100.
  • the scanning line driving circuit 101 and the data line driving circuit 103 may have a transistor 80.
  • the scanning line drive circuit 101 is electrically connected to the pixel 50 via the wiring 105.
  • the data line drive circuit 103 is electrically connected to the pixel 50 via the wiring 107.
  • the wiring 105 and the wiring 107 can be configured to extend in orthogonal directions.
  • the scanning line drive circuit 101 has a function of generating a selection signal for selecting a pixel 50 for writing image data.
  • the data line drive circuit 103 has a function of generating a signal (data signal) representing image data.
  • the selection signal is supplied to the pixel 50 via the wiring 105, and the data signal is supplied to the pixel 50 via the wiring 107.
  • FIG. 21B is a circuit diagram showing a configuration example of the pixel 50.
  • the pixel 50 includes a light emitting element 20 and a pixel circuit 110.
  • the pixel circuit 110 includes a transistor 111, a transistor 140, a transistor 113, and a capacitance 115. Further, the pixel circuit 110 is electrically connected to one electrode of the light emitting element 20.
  • the transistor 140 can be, for example, the transistor 80 shown in FIGS. 16 and 17A to 17C, or the transistor 70 shown in FIG.
  • One of the source and drain of transistor 111 is electrically connected to the gate of transistor 140.
  • the gate of the transistor 140 is electrically connected to one electrode of the capacitance 115.
  • One of the source or drain of the transistor 140 is electrically connected to one of the source or drain of the transistor 113.
  • One of the source or drain of transistor 113 is electrically connected to the other electrode of capacitance 115.
  • the other electrode of capacitance 115 is electrically connected to one electrode of the light emitting element 20.
  • a node in which one of the source or drain of the transistor 111, the gate of the transistor 140, and one electrode of the capacitance 115 is electrically connected is referred to as a node 117.
  • node 119 is a node in which one of the source or drain of the transistor 140, one of the source or drain of the transistor 113, the other electrode of the capacitance 115, and one electrode of the light emitting element 20 are electrically connected. And.
  • the other of the source or drain of the transistor 111 is electrically connected to the wiring 107.
  • the gate of the transistor 111 and the gate of the transistor 113 are electrically connected to the wiring 105.
  • the other of the source or drain of the transistor 140 is electrically connected to the potential supply line VL_a.
  • the other of the source or drain of the transistor 113 is electrically connected to the potential supply line VL0.
  • the other electrode of the light emitting element 20 is electrically connected to the potential supply line VL_b.
  • the transistor 111 has a function of controlling writing of image data to the node 117.
  • the capacity 115 has a function as a holding capacity for holding the data written to the node 117.
  • the pixel circuit 110 of each line is sequentially selected by the scanning line drive circuit 101, and the image data is written to the node 117 with the transistor 111 and the transistor 113 turned on.
  • the pixel circuit 110 in which the image data is written in the node 117 is in a holding state when the transistor 111 and the transistor 113 are turned off. Further, the amount of current flowing between the drain and the source of the transistor 140 is controlled according to the potential of the node 119, and the light emitting element 20 emits light with a brightness corresponding to the current amount. By sequentially performing this line by line, an image can be displayed on the display unit 100.
  • ⁇ Transistor configuration example> 22A, 22B, and 22C are a top view and a cross-sectional view of the transistor 70 and the periphery of the transistor 70.
  • FIG. 22A is a top view of the transistor 70.
  • 22B and 22C are cross-sectional views of the transistor 70.
  • FIG. 22B is a cross-sectional view of the portion shown by the alternate long and short dash line of X1-X2 in FIG. 22A, and is also a cross-sectional view of the transistor 70 in the channel length direction.
  • FIG. 22C is a cross-sectional view of the portion shown by the alternate long and short dash line of Y1-Y2 in FIG. 22A, and is also a cross-sectional view of the transistor 70 in the channel width direction.
  • some elements are omitted for the sake of clarity.
  • the conductor 70 is composed of a metal oxide 230a arranged on a substrate (not shown), a metal oxide 230b arranged on the metal oxide 230a, and a metal oxide 230b.
  • Insulator 280 arranged above the conductors 242a and 242b separated from each other and on the conductors 242a and 242b and having an opening formed between the conductors 242a and the conductors 242b.
  • the conductor 260 arranged in the opening, the metal oxide 230b, the conductor 242a, the conductor 242b, the insulator 280, the insulator 250 arranged between the conductor 260, and the metal.
  • the conductor 242a and the conductor 242b may be collectively referred to as a conductor 242.
  • the side surfaces of the conductor 242a and the conductor 242b on the conductor 260 side have a substantially vertical shape.
  • the transistor 70 shown in FIG. 22 is not limited to this, and the angle formed by the side surface and the bottom surface of the conductor 242a and the conductor 242b is 10 ° or more and 80 ° or less, preferably 30 ° or more and 60 ° or less. May be. Further, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces.
  • the insulator 254 is arranged between the insulator 224, the metal oxide 230a, the metal oxide 230b, the conductor 242a, the conductor 242b, the metal oxide 230c, and the insulator 280. Is preferable.
  • the insulator 254 includes a side surface of the metal oxide 230c, an upper surface and a side surface of the conductor 242a, an upper surface and a side surface of the conductor 242b, a metal oxide 230a and a metal oxide 230b. It is preferable to be in contact with the side surface of the insulator and the upper surface of the insulator 224.
  • the transistor 70 has a configuration in which three layers of a metal oxide 230a, a metal oxide 230b, and a metal oxide 230c are laminated in a region where a channel is formed (hereinafter, also referred to as a channel formation region) and in the vicinity thereof.
  • a two-layer structure of the metal oxide 230b and the metal oxide 230c, or a laminated structure of four or more layers may be provided.
  • the conductor 260 is shown as a two-layer laminated structure, but the present invention is not limited to this.
  • the conductor 260 may have a single-layer structure or a laminated structure of three or more layers.
  • each of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c may have a laminated structure of two or more layers.
  • the metal oxide 230c has a laminated structure composed of a first metal oxide and a second metal oxide on the first metal oxide
  • the first metal oxide is a metal oxide 230b. It has a similar composition
  • the second metal oxide preferably has the same composition as the metal oxide 230a.
  • the conductor 260 functions as a gate electrode of the transistor, and the conductor 242a and the conductor 242b function as a source electrode or a drain electrode, respectively.
  • the conductor 260 is formed so as to be embedded in the opening of the insulator 280 and the region sandwiched between the conductor 242a and the conductor 242b.
  • the arrangement of the conductor 260, the conductor 242a, and the conductor 242b is selected in a self-aligned manner with respect to the opening of the insulator 280. That is, in the transistor 70, the gate electrode can be arranged in a self-aligned manner between the source electrode and the drain electrode. Therefore, since the conductor 260 can be formed without providing the alignment margin, the occupied area of the transistor 70 can be reduced. As a result, the display device can be made high-definition. Further, the display device can be made into a narrow frame.
  • the conductor 260 preferably has a conductor 260a provided inside the insulator 250 and a conductor 260b provided so as to be embedded inside the conductor 260a.
  • the transistor 70 includes an insulator 214 arranged on a substrate (not shown), an insulator 216 arranged on the insulator 214, and a conductor 205 arranged so as to be embedded in the insulator 216. It is preferable to have an insulator 222 arranged on the insulator 216 and the conductor 205, and an insulator 224 arranged on the insulator 222. It is preferable that the metal oxide 230a is arranged on the insulator 224.
  • an insulator 274 that functions as an interlayer film and an insulator 281 are arranged on the transistor 70.
  • the insulator 274 is arranged in contact with the upper surface of the conductor 260, the insulator 250, the insulator 254, the metal oxide 230c, and the insulator 280.
  • the insulator 222, the insulator 254, and the insulator 274 preferably have a function of suppressing the diffusion of at least one hydrogen (for example, a hydrogen atom, a hydrogen molecule, etc.).
  • the insulator 222, the insulator 254, and the insulator 274 preferably have lower hydrogen permeability than the insulator 224, the insulator 250, and the insulator 280.
  • the insulator 222 and the insulator 254 preferably have a function of suppressing the diffusion of oxygen (for example, at least one of an oxygen atom and an oxygen molecule).
  • the insulator 222 and the insulator 254 preferably have lower oxygen permeability than the insulator 224, the insulator 250, and the insulator 280.
  • the insulator 224, the metal oxide 230, and the insulator 250 are separated from the insulator 280 and the insulator 281 by the insulator 254 and the insulator 274. Therefore, in the insulator 224, the metal oxide 230, and the insulator 250, impurities such as hydrogen contained in the insulator 280 and the insulator 281 or excess oxygen are added to the insulator 224, the metal oxide 230a, and the metal oxide. It is possible to suppress mixing with 230b and the insulator 250.
  • a conductor 240 (conductor 240a and conductor 240b) that is electrically connected to the transistor 70 and functions as a plug is provided.
  • An insulator 241 (insulator 241a and insulator 241b) is provided in contact with the side surface of the conductor 240 that functions as a plug. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 241 are provided in contact with the inner wall of the opening of the insulator 281. Further, the first conductor of the conductor 240 may be provided in contact with the side surface of the insulator 241, and the second conductor of the conductor 240 may be further provided inside.
  • the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 can be made about the same.
  • the transistor 70 shows a configuration in which the first conductor of the conductor 240 and the second conductor of the conductor 240 are laminated, but the present invention is not limited to this.
  • the conductor 240 may be provided as a single layer or a laminated structure having three or more layers. When the structure has a laminated structure, an ordinal number may be given in the order of formation to distinguish them.
  • the transistor 70 is a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) containing a channel forming region, and a metal oxide (hereinafter, also referred to as an oxide semiconductor) that functions as an oxide semiconductor. ) Is preferably used.
  • a metal oxide serving as the channel forming region of the metal oxide 230, it is preferable to use a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more.
  • the metal oxide preferably contains at least indium (In) or zinc (Zn). In particular, it preferably contains indium (In) and zinc (Zn). Further, in addition to these, it is preferable that the element M is contained.
  • Elements M include aluminum (Al), gallium (Ga), ittrium (Y), tin (Sn), boron (B), titanium (Ti), iron (Fe), nickel (Ni), germanium (Ge), and zirconium.
  • Zr molybdenum
  • lantern (La) cerium (Ce), neodymium (Nd), hafnium (Hf), tantalum (Ta), tungsten (W), gallium (Mg) or cobalt (Co)
  • the element M is preferably one or more of aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn). Further, it is more preferable that the element M has either one or both of Ga and Sn.
  • the film thickness of the region of the metal oxide 230b that does not overlap with the conductor 242 may be thinner than the film thickness of the region that overlaps with the conductor 242. This is formed by removing a part of the upper surface of the metal oxide 230b when forming the conductor 242a and the conductor 242b.
  • a region having low resistance may be formed in the vicinity of the interface with the conductive film. As described above, by removing the region having low resistance located between the conductor 242a and the conductor 242b on the upper surface of the metal oxide 230b, it is possible to prevent the formation of a channel in the region.
  • a display device having a transistor having a small size and a high definition it is possible to provide a display device having a transistor having a large on-current and a high brightness.
  • a display device having a fast-moving transistor and fast-moving it is possible to provide a highly reliable display device having a transistor having stable electrical characteristics.
  • a display device having a transistor having a small off-current and low power consumption it is possible to provide.
  • transistor 70 A detailed configuration of the transistor 70 that can be used in the display device according to one aspect of the present invention will be described.
  • the conductor 205 is arranged so as to have a region overlapping with the metal oxide 230 and the conductor 260. Further, it is preferable that the conductor 205 is embedded in the insulator 216.
  • the conductor 205 has a conductor 205a, a conductor 205b, and a conductor 205c.
  • the conductor 205a is provided in contact with the bottom surface and the side wall of the opening provided in the insulator 216.
  • the conductor 205b is provided so as to be embedded in the recess formed in the conductor 205a.
  • the upper surface of the conductor 205b is lower than the upper surface of the conductor 205a and the upper surface of the insulator 216.
  • the conductor 205c is provided in contact with the upper surface of the conductor 205b and the side surface of the conductor 205a.
  • the height of the upper surface of the conductor 205c is substantially the same as the height of the upper surface of the conductor 205a and the height of the upper surface of the insulator 216. That is, the conductor 205b is wrapped in the conductor 205a and the conductor 205c.
  • the conductor 205a and the conductor 205c have a function of suppressing the diffusion of impurities such as hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule ( N2O, NO, NO2 , etc.) and copper atom. It is preferable to use a conductive material having. Alternatively, it is preferable to use a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom and oxygen molecule).
  • a conductive material having a function of reducing the diffusion of hydrogen for the conductor 205a and the conductor 205c impurities such as hydrogen contained in the conductor 205b are removed from the metal oxide 230 via the insulator 224 and the like. It can be suppressed from spreading to. Further, by using a conductive material having a function of suppressing the diffusion of oxygen for the conductor 205a and the conductor 205c, it is possible to prevent the conductor 205b from being oxidized and the conductivity from being lowered.
  • the conductive material having a function of suppressing the diffusion of oxygen for example, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used. Therefore, as the conductor 205a, the conductive material may be a single layer or a laminated material. For example, titanium nitride may be used for the conductor 205a.
  • the conductor 205b it is preferable to use a conductive material containing tungsten, copper or aluminum as a main component.
  • tungsten may be used for the conductor 205b.
  • the conductor 260 may function as a first gate (also referred to as a top gate) electrode.
  • the conductor 205 may function as a second gate (also referred to as a bottom gate) electrode.
  • the Vth of the transistor 70 can be controlled by changing the potential applied to the conductor 205 independently without interlocking with the potential applied to the conductor 260.
  • a negative potential to the conductor 205, it is possible to make the Vth of the transistor 70 larger than 0V and reduce the off-current. Therefore, when a negative potential is applied to the conductor 205, the drain current when the potential applied to the conductor 260 is 0 V can be made smaller than when it is not applied.
  • the conductor 205 may be provided larger than the channel forming region in the metal oxide 230.
  • the conductor 205 is also stretched in a region outside the end portion intersecting the channel width direction of the metal oxide 230. That is, it is preferable that the conductor 205 and the conductor 260 are superimposed via an insulator on the outside of the side surface of the metal oxide 230 in the channel width direction.
  • the channel forming region of the metal oxide 230 is formed by the electric field of the conductor 260 having a function as a first gate electrode and the electric field of the conductor 205 having a function as a second gate electrode. Can be electrically surrounded.
  • the conductor 205 is stretched to function as wiring.
  • the present invention is not limited to this, and a conductor that functions as wiring may be provided under the conductor 205.
  • the insulator 214 preferably functions as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 70 from the substrate side. Therefore, the insulator 214 has a function of suppressing the diffusion of impurities such as hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule ( N2O, NO, NO2 , etc.) or copper atom. It is preferable to use an insulating material having (the above impurities are difficult to permeate). Alternatively, it is preferable to use an insulating material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom and oxygen molecule) (the above oxygen is difficult to permeate).
  • oxygen for example, at least one oxygen atom and oxygen molecule
  • the insulator 214 it is preferable to use aluminum oxide, silicon nitride, or the like as the insulator 214. As a result, it is possible to prevent impurities such as water and hydrogen from diffusing from the substrate side to the transistor 70 side of the insulator 214. Alternatively, it is possible to prevent oxygen contained in the insulator 224 or the like from diffusing toward the substrate side of the insulator 214.
  • the insulator 216, the insulator 280, and the insulator 281 that function as the interlayer film preferably have a lower dielectric constant than the insulator 214.
  • a material having a low dielectric constant as an interlayer film, it is possible to reduce the parasitic capacitance generated between the wirings.
  • silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine was added, silicon oxide to which carbon was added, carbon, and nitrogen were added. Silicon oxide, silicon oxide having pores, or the like may be appropriately used.
  • the insulator 222 and the insulator 224 have a function as a gate insulator.
  • the insulator 224 in contact with the metal oxide 230 desorbs oxygen by heating.
  • oxygen released by heating may be referred to as excess oxygen.
  • the insulator 224 silicon oxide, silicon oxide nitride, or the like may be appropriately used.
  • the insulator 224 it is preferable to use an oxide material in which a part of oxygen is desorbed by heating.
  • Oxides that desorb oxygen by heating are those in which the amount of oxygen desorbed in terms of oxygen atoms is 1.0 ⁇ 10 18 atoms / cm 3 or more, preferably 1 in TDS (Thermal Desorption Spectroscopy) analysis.
  • the surface temperature of the film during the TDS analysis is preferably in the range of 100 ° C. or higher and 700 ° C. or lower, or 100 ° C. or higher and 400 ° C. or lower.
  • the film thickness of the region where the insulator 224 does not overlap with the insulator 254 and does not overlap with the metal oxide 230b may be thinner than the film thickness in the other regions.
  • the film thickness of the region that does not overlap with the insulator 254 and does not overlap with the metal oxide 230b is preferably a film thickness that can sufficiently diffuse the oxygen.
  • the insulator 222 preferably functions as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 70 from the substrate side.
  • the insulator 222 preferably has a lower hydrogen permeability than the insulator 224.
  • the insulator 222 has a function of suppressing the diffusion of oxygen (for example, at least one of an oxygen atom and an oxygen molecule) (the oxygen is difficult to permeate).
  • the insulator 222 preferably has a lower oxygen permeability than the insulator 224. Since the insulator 222 has a function of suppressing the diffusion of oxygen or impurities, it is possible to reduce the diffusion of oxygen contained in the metal oxide 230 toward the substrate side, which is preferable. Further, it is possible to suppress the conductor 205 from reacting with the oxygen contained in the insulator 224 or the oxygen contained in the metal oxide 230.
  • the insulator 222 it is preferable to use an insulator containing oxides of one or both of aluminum and hafnium, which are insulating materials.
  • an insulator containing one or both oxides of aluminum and hafnium it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate) and the like.
  • the insulator 222 releases oxygen from the metal oxide 230 and mixes impurities such as hydrogen from the peripheral portion of the transistor 70 into the metal oxide 230. It functions as a suppressing layer.
  • aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, and zirconium oxide may be added to these insulators.
  • these insulators may be nitrided. Silicon oxide, silicon oxide or silicon nitride may be laminated on the above insulator.
  • the insulator 222 is a so-called high such as aluminum oxide, hafnium oxide, tantalum oxide, zirconate oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ) or (Ba, Sr) TiO 3 (BST).
  • Insulators containing the ⁇ k material may be used in single layers or in layers. As transistors become finer and more integrated, problems such as leakage current may occur due to the thinning of the gate insulator. By using a high-k material for an insulator that functions as a gate insulator, it is possible to reduce the gate potential during transistor operation while maintaining the physical film thickness.
  • the insulator 222 and the insulator 224 may have a laminated structure of two or more layers.
  • the laminated structure is not limited to the same material, and may be a laminated structure made of different materials.
  • an insulator similar to the insulator 224 may be provided under the insulator 222.
  • the metal oxide 230 has a metal oxide 230a, a metal oxide 230b on the metal oxide 230a, and a metal oxide 230c on the metal oxide 230b.
  • the metal oxide 230a under the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed below the metal oxide 230a to the metal oxide 230b.
  • the metal oxide 230c on the metal oxide 230b, it is possible to suppress the diffusion of impurities from the structure formed above the metal oxide 230c to the metal oxide 230b.
  • the metal oxide 230 preferably has a laminated structure of a plurality of oxide layers having different atomic number ratios of each metal atom.
  • the metal oxide 230 contains at least indium (In) and the element M
  • the number of atoms of the element M contained in the metal oxide 230a is relative to the number of atoms of all the elements constituting the metal oxide 230a.
  • the ratio is preferably higher than the ratio of the number of atoms of the element M contained in the metal oxide 230b to the number of atoms of all the elements constituting the metal oxide 230b.
  • the atomic number ratio of the element M contained in the metal oxide 230a to In is larger than the atomic number ratio of the element M contained in the metal oxide 230b to In.
  • the metal oxide 230c a metal oxide that can be used for the metal oxide 230a or the metal oxide 230b can be used.
  • the energy at the lower end of the conduction band of the metal oxide 230a and the metal oxide 230c is higher than the energy at the lower end of the conduction band of the metal oxide 230b.
  • the electron affinity of the metal oxide 230a and the metal oxide 230c is smaller than the electron affinity of the metal oxide 230b.
  • the metal oxide 230c it is preferable to use a metal oxide that can be used for the metal oxide 230a.
  • the ratio of the number of atoms of the element M contained in the metal oxide 230c to the number of atoms of all the elements constituting the metal oxide 230c is the ratio of the number of atoms of the element M contained in the metal oxide 230b to the number of atoms of all the elements constituting the metal oxide 230b. It is preferably higher than the ratio of the number of atoms of the element M contained in the oxide 230b. Further, it is preferable that the atomic number ratio of the element M contained in the metal oxide 230c to In is larger than the atomic number ratio of the element M contained in the metal oxide 230b to In.
  • the energy level at the lower end of the conduction band changes gently.
  • the energy level at the lower end of the conduction band at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c is continuously changed or continuously bonded.
  • the metal oxide 230a and the metal oxide 230b, and the metal oxide 230b and the metal oxide 230c have a common element (main component) other than oxygen, so that the defect level density is low.
  • a mixed layer can be formed.
  • the metal oxide 230b is an In-Ga-Zn oxide, In-Ga-Zn oxide, Ga-Zn oxide, gallium oxide or the like may be used as the metal oxide 230a and the metal oxide 230c. ..
  • the metal oxide 230c may have a laminated structure.
  • a laminated structure with gallium oxide can be used.
  • the laminated structure of the In-Ga-Zn oxide and the oxide containing no In may be used as the metal oxide 230c.
  • the metal oxide 230c has a laminated structure
  • the main path of the carrier is the metal oxide 230b.
  • the defect level density at the interface between the metal oxide 230a and the metal oxide 230b and the interface between the metal oxide 230b and the metal oxide 230c can be determined. Can be lowered. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and the transistor 70 can obtain high on-current and high frequency characteristics.
  • the constituent elements of the metal oxide 230c are It is expected to suppress diffusion to the insulator 250 side.
  • the metal oxide 230c has a laminated structure and the oxide containing no In is positioned above the laminated structure, In that can be diffused to the insulator 250 side can be suppressed. Since the insulator 250 functions as a gate insulator, if In is diffused, the characteristics of the transistor become poor. Therefore, by forming the metal oxide 230c in a laminated structure, it is possible to provide a highly reliable display device.
  • a conductor 242 (conductor 242a and conductor 242b) that functions as a source electrode and a drain electrode is provided on the metal oxide 230b.
  • the conductor 242 aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lantern. It is preferable to use a metal element selected from the above, an alloy containing the above-mentioned metal element as a component, an alloy in which the above-mentioned metal element is combined, or the like.
  • tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even if it absorbs oxygen.
  • the oxygen concentration may be reduced in the vicinity of the conductor 242 of the metal oxide 230. Further, in the vicinity of the conductor 242 of the metal oxide 230, a metal compound layer containing the metal contained in the conductor 242 and the component of the metal oxide 230 may be formed. In such a case, the carrier density increases in the region near the conductor 242 of the metal oxide 230, and the region becomes a low resistance region.
  • the region between the conductor 242a and the conductor 242b is formed so as to overlap the opening of the insulator 280.
  • the conductor 260 can be arranged in a self-aligned manner between the conductor 242a and the conductor 242b.
  • the insulator 250 functions as a gate insulator.
  • the insulator 250 is preferably arranged in contact with the upper surface of the metal oxide 230c.
  • silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon is added, silicon oxide to which carbon and nitrogen are added, and silicon oxide having pores are used. be able to.
  • silicon oxide and silicon nitride nitride are preferable because they are stable against heat.
  • the insulator 250 preferably has a reduced concentration of impurities such as water and hydrogen in the insulator 250.
  • the film thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.
  • a metal oxide may be provided between the insulator 250 and the conductor 260.
  • the metal oxide preferably suppresses oxygen diffusion from the insulator 250 to the conductor 260. As a result, the oxidation of the conductor 260 by oxygen of the insulator 250 can be suppressed.
  • the metal oxide may function as part of the gate insulator. Therefore, when silicon oxide, silicon oxide nitride, or the like is used for the insulator 250, it is preferable to use a metal oxide which is a high-k material having a high relative permittivity.
  • a metal oxide which is a high-k material having a high relative permittivity.
  • metal oxides selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium and the like.
  • aluminum oxide, or an oxide containing one or both oxides of aluminum or hafnium such as aluminum oxide, hafnium oxide, aluminum and an oxide containing hafnium (hafnium aluminate).
  • the conductor 260 is shown as a two-layer structure in FIG. 22, it may have a single-layer structure or a laminated structure of three or more layers.
  • the conductor 260a suppresses the diffusion of impurities such as hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitrogen oxide molecule ( N2 O, NO, NO 2 , etc.), or copper atom described above. It is preferable to use a conductor having a function. Alternatively, it is preferable to use a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom and oxygen molecule).
  • the conductor 260a has a function of suppressing the diffusion of oxygen, it is possible to prevent the conductor 260b from being oxidized by the oxygen contained in the insulator 250 and the conductivity from being lowered.
  • the conductive material having a function of suppressing the diffusion of oxygen for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used.
  • the conductor 260b it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, since the conductor 260 also functions as wiring, it is preferable to use a conductor having high conductivity. For example, a conductive material containing tungsten, copper, or aluminum as a main component can be used. Further, the conductor 260b may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the conductive material.
  • the side surface of the metal oxide 230 is covered with the conductor 260 in the region that does not overlap with the conductor 242 of the metal oxide 230b, in other words, in the channel formation region of the metal oxide 230. Have been placed. This makes it easier for the electric field of the conductor 260, which functions as the first gate electrode, to act on the side surface of the metal oxide 230. Therefore, the on-current of the transistor 70 can be increased and the frequency characteristics can be improved.
  • the insulator 254 preferably functions as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the transistor 70 from the insulator 280 side.
  • the insulator 254 preferably has a lower hydrogen permeability than the insulator 224.
  • the insulator 254 is the side surface of the metal oxide 230c, the upper surface and the side surface of the conductor 242a, the upper surface and the side surface of the conductor 242b, the metal oxide 230a and the metal oxide 230b. It is preferable to be in contact with the side surface and the upper surface of the insulator 224.
  • the insulator 254 has a function of suppressing the diffusion of oxygen (for example, at least one of an oxygen atom and an oxygen molecule) (the oxygen is difficult to permeate).
  • the insulator 254 preferably has lower oxygen permeability than the insulator 280 or the insulator 224.
  • the insulator 254 is preferably formed by a sputtering method.
  • oxygen can be added to the vicinity of the region of the insulator 224 in contact with the insulator 254.
  • oxygen can be supplied from the region into the metal oxide 230 via the insulator 224.
  • the insulator 254 has a function of suppressing the diffusion of oxygen upward, it is possible to prevent oxygen from diffusing from the metal oxide 230 to the insulator 280.
  • the insulator 222 has a function of suppressing the diffusion of oxygen downward, it is possible to prevent oxygen from diffusing from the metal oxide 230 toward the substrate side. In this way, oxygen is supplied to the channel forming region of the metal oxide 230. As a result, the oxygen deficiency of the metal oxide 230 can be reduced, and the normalization of the transistor can be suppressed.
  • an insulator containing oxides of one or both of aluminum and hafnium may be formed.
  • the insulator containing one or both oxides of aluminum and hafnium it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate) and the like.
  • the insulator 280 is covered by the insulator 254, and the insulator 224, the metal oxide 230, And separated from the insulator 250.
  • impurities such as hydrogen can be suppressed from entering from the outside of the transistor 70, so that good electrical characteristics and reliability can be given to the transistor 70.
  • the insulator 280 is provided on the insulator 224, the metal oxide 230, and the conductor 242 via the insulator 254.
  • silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon oxide added with fluorine, silicon oxide added with carbon, silicon oxide added with carbon and nitrogen, silicon oxide having pores, or the like can be used as the insulator 280. It is preferable to have.
  • silicon oxide and silicon nitride nitride are preferable because they are thermally stable.
  • materials such as silicon oxide, silicon oxide nitride, and silicon oxide having pores are preferable because a region containing oxygen desorbed by heating can be easily formed.
  • the concentration of impurities such as water and hydrogen in the insulator 280 is reduced. Further, the upper surface of the insulator 280 may be flattened.
  • the insulator 274 preferably functions as a barrier insulating film that prevents impurities such as water and hydrogen from being mixed into the insulator 280 from above.
  • the insulator 274 for example, an insulator that can be used for the insulator 214, the insulator 254, or the like may be used.
  • the insulator 281 that functions as an interlayer film on the insulator 274.
  • the insulator 281 preferably has a reduced concentration of impurities such as water and hydrogen in the film.
  • the conductor 240a and the conductor 240b are arranged in the openings formed in the insulator 281, the insulator 274, the insulator 280, and the insulator 254.
  • the conductor 240a and the conductor 240b are provided so as to face each other with the conductor 260 interposed therebetween.
  • the height of the upper surfaces of the conductor 240a and the conductor 240b may be flush with the upper surface of the insulator 281.
  • An insulator 241a is provided in contact with the inner wall of the opening of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240a is formed in contact with the side surface thereof. ing.
  • the conductor 242a is located at least a part of the bottom of the opening, and the conductor 240a is in contact with the conductor 242a.
  • the insulator 241b is provided in contact with the inner wall of the opening of the insulator 281, the insulator 274, the insulator 280, and the insulator 254, and the first conductor of the conductor 240b is formed in contact with the side surface thereof.
  • the conductor 242b is located at least a part of the bottom of the opening, and the conductor 240b is in contact with the conductor 242b.
  • the conductor 240a and the conductor 240b it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, the conductor 240a and the conductor 240b may have a laminated structure.
  • the conductor 240 has a laminated structure
  • the above-mentioned water is used as the conductor in contact with the metal oxide 230a, the metal oxide 230b, the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281.
  • a conductor having a function of suppressing the diffusion of impurities such as hydrogen For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, ruthenium oxide and the like are preferably used.
  • the conductive material having a function of suppressing the diffusion of impurities such as water and hydrogen may be used in a single layer or in a laminated state.
  • the conductive material By using the conductive material, it is possible to suppress the oxygen added to the insulator 280 from being absorbed by the conductor 240a and the conductor 240b. Further, it is possible to prevent impurities such as water and hydrogen from being mixed into the metal oxide 230 from the layer above the insulator 281 through the conductor 240a and the conductor 240b.
  • the insulator 241a and the insulator 241b for example, an insulator that can be used for the insulator 254 or the like may be used. Since the insulator 241a and the insulator 241b are provided in contact with the insulator 254, impurities such as water or hydrogen from the insulator 280 and the like are suppressed from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. can. Further, it is possible to suppress the oxygen contained in the insulator 280 from being absorbed by the conductor 240a and the conductor 240b.
  • a conductor that functions as wiring may be arranged in contact with the upper surface of the conductor 240a and the upper surface of the conductor 240b.
  • the conductor that functions as wiring it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component.
  • the conductor may have a laminated structure, and may be, for example, a laminated structure of titanium or titanium nitride and the conductive material.
  • the conductor may be formed so as to be embedded in an opening provided in the insulator.
  • the EL layer 23 included in the light emitting element 20 can be composed of a plurality of layers such as a layer 4420, a light emitting layer 4411, and a layer 4430.
  • the layer 4420 can have, for example, a layer containing a substance having a high electron injectability (electron injection layer), a layer containing a substance having a high electron transport property (electron transport layer), and the like.
  • the light emitting layer 4411 has, for example, a luminescent compound.
  • the layer 4430 can have, for example, a layer containing a substance having a high hole injection property (hole injection layer) and a layer containing a substance having a high hole transport property (hole transport layer).
  • a configuration having a layer 4420, a light emitting layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single light emitting unit, and the configuration of FIG. 23A is referred to as a single structure in the present specification.
  • FIG. 23B is a modified example of the EL layer 23 included in the light emitting element 20 shown in FIG. 23A.
  • the light emitting element 20 shown in FIG. 23B includes a layer 4430-1 on the lower electrode 21, a layer 4430-2 on the layer 4430-1, a light emitting layer 4411 on the layer 4430-2, and a light emitting layer. It has a layer 4420-1 on the 4411, a layer 4420-2 on the layer 4420-1 and an upper electrode 25 on the layer 4420-2.
  • the layer 4430-1 functions as a hole injection layer
  • the layer 4430-2 functions as a hole transport layer
  • the layer 4420-1 is an electron. It functions as a transport layer
  • layer 4420-2 functions as an electron injection layer
  • layer 4430-1 when the lower electrode 21 is used as a cathode and the upper electrode 25 is used as an anode, layer 4430-1 functions as an electron injection layer
  • layer 4430-2 when the lower electrode 21 is used as a cathode and the upper electrode 25 is used as an anode, layer 4430-1 functions as an electron injection layer
  • layer 4430-2 functions as an electron transport layer
  • layer 4420-1 transports holes. It functions as a layer, and layer 4420-2 functions as a hole injection layer.
  • a configuration in which a plurality of light emitting layers (light emitting layer 4411, light emitting layer 4412, light emitting layer 4413) are provided between the layer 4420 and the layer 4430 is also a variation of the single structure.
  • tandem structure a configuration in which a plurality of light emitting units (EL layer 23a, EL layer 23b) are connected in series via an intermediate layer (charge generation layer) 4440 is referred to as a tandem structure in the present specification.
  • the structure shown in FIG. 23D is referred to as a tandem structure, but the structure is not limited to this, and for example, the tandem structure may be referred to as a stack structure.
  • the tandem structure makes it possible to obtain a light emitting element capable of high-luminance light emission.
  • the layer 4420 and the layer 4430 may have a laminated structure composed of two or more layers.
  • the manufacturing process of the single structure and the tandem structure is simpler than that of the SBS structure. Therefore, the manufacturing cost of the display device according to one aspect of the present invention can be reduced, and the yield can be increased. From the above, the price of the display device of one aspect of the display device can be reduced.
  • the power consumption can be reduced in the order of the SBS structure, the tandem structure, and the single structure. Therefore, when it is desired to keep the power consumption of the display device of one aspect of the present invention low, it is preferable to use the SBS structure.
  • the emission color of the light emitting element 20 can be red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material constituting the EL layer 23. Further, the color purity can be further improved by imparting the microcavity structure to the light emitting element 20.
  • the light emitting element that emits white light preferably has a structure in which the light emitting layer contains two or more kinds of light emitting substances.
  • a light emitting substance may be selected so that the light emission of each of the two or more light emitting substances has a complementary color relationship.
  • the light emitting layer preferably contains two or more kinds of light emitting substances such as R (red), G (green), B (blue), Y (yellow), and O (orange).
  • This embodiment can be implemented in combination with other embodiments described in the present specification, or examples thereof, at least in part thereof.
  • FIG. 24A is a diagram illustrating classification of crystal structures of oxide semiconductors, typically IGZO (metal oxides containing In, Ga, and Zn).
  • IGZO metal oxides containing In, Ga, and Zn
  • oxide semiconductors are roughly classified into “Amorphous”, “Crystalline”, and “Crystal”.
  • Amorphous includes complete amorphous.
  • “Crystalline” includes CAAC (c-axis-aligned crystalline), nc (nanocrystalline), and CAC (cloud-aligned composite).
  • single crystal, poly crystal, and single crystal amorphous are excluded from the classification of “Crystalline” (exclusion single crystal and poly crystal).
  • “Crystal” includes single crystal and poly crystal.
  • the structure in the thick frame shown in FIG. 24A is an intermediate state between "Amorphous” and “Crystal", and belongs to a new boundary region (New crystal line phase). .. That is, the structure can be rephrased as a structure completely different from the energetically unstable "Amorphous” and "Crystal".
  • the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD: X-Ray Diffraction) spectrum.
  • XRD X-ray diffraction
  • FIG. 24B the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement of a CAAC-IGZO film classified as "Crystalline" is shown in FIG. 24B.
  • the horizontal axis is 2 ⁇ [deg. ]
  • the vertical axis is Intensity [a. u. ].
  • the GIXD method is also referred to as a thin film method or a Seemann-Bohlin method.
  • the XRD spectrum obtained by the GIXD measurement shown in FIG. 24B will be simply referred to as an XRD spectrum.
  • the horizontal axis is 2 ⁇ [deg. ], And the vertical axis is the intensity [a. u. ].
  • a peak showing clear crystallinity is detected in the XRD spectrum of the CAAC-IGZO film.
  • the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a microelectron diffraction pattern) observed by a micro electron diffraction method (NBED: Nano Beam Electron Diffraction).
  • the diffraction pattern of the CAAC-IGZO film is shown in FIG. 24C.
  • FIG. 24C is a diffraction pattern observed by the NBED in which the electron beam is incident parallel to the substrate.
  • electron beam diffraction is performed with the probe diameter set to 1 nm.
  • oxide semiconductors When focusing on the crystal structure, oxide semiconductors may be classified differently from FIG. 24A. For example, oxide semiconductors are divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors. Examples of the non-single crystal oxide semiconductor include the above-mentioned CAAC-OS and nc-OS. Further, the non-single crystal oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), an amorphous oxide semiconductor and the like.
  • a-like OS amorphous-like oxide semiconductor
  • CAAC-OS CAAC-OS
  • nc-OS nc-OS
  • a-like OS the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.
  • CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the plurality of crystal regions are oriented in a specific direction on the c-axis.
  • the specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface to be formed of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film.
  • the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region in which the lattice arrangement is aligned. Further, the CAAC-OS has a region in which a plurality of crystal regions are connected in the ab plane direction, and the region may have distortion.
  • the strain refers to a region in which a plurality of crystal regions are connected in which the orientation of the lattice arrangement changes between a region in which the lattice arrangement is aligned and a region in which another grid arrangement is aligned. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and not clearly oriented in the ab plane direction.
  • Each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystal region is less than 10 nm.
  • the size of the crystal region may be about several tens of nm.
  • CAAC-OS is a layer having indium (In) and oxygen (element M).
  • indium In
  • oxygen element M
  • a layered crystal structure also referred to as a layered structure
  • an In layer and a layer having elements M, zinc (Zn), and oxygen
  • (M, Zn) layer are laminated.
  • the (M, Zn) layer may contain indium.
  • the In layer may contain the element M.
  • the In layer may contain Zn.
  • the layered structure is observed as a grid image in, for example, a high-resolution TEM image.
  • the position of the peak indicating the c-axis orientation may vary depending on the type or composition of the metal elements constituting CAAC-OS.
  • a plurality of bright spots are observed in the electron diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with the spot of the incident electron beam passing through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit lattice is not limited to a regular hexagon and may be a non-regular hexagon. Further, in the above strain, it may have a lattice arrangement such as a pentagon or a heptagon.
  • a clear grain boundary cannot be confirmed even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction and that the bond distance between atoms changes due to the substitution of metal atoms. It is thought that this is the reason.
  • CAAC-OS for which no clear crystal grain boundary is confirmed, is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor.
  • a configuration having Zn is preferable.
  • In-Zn oxide and In-Ga-Zn oxide are more suitable than In oxide because they can suppress the generation of grain boundaries.
  • CAAC-OS is an oxide semiconductor having high crystallinity and no clear grain boundary is confirmed. Therefore, it can be said that CAAC-OS is unlikely to cause a decrease in electron mobility due to grain boundaries. Further, since the crystallinity of the oxide semiconductor may be lowered due to the mixing of impurities, the generation of defects, etc., CAAC-OS can be said to be an oxide semiconductor having few impurities or defects (oxygen deficiency, etc.). Therefore, the oxide semiconductor having CAAC-OS has stable physical properties. Therefore, the oxide semiconductor having CAAC-OS is resistant to heat and has high reliability. CAAC-OS is also stable against high temperatures (so-called thermal budgets) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, the degree of freedom in the manufacturing process can be expanded.
  • nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less).
  • nc-OS has tiny crystals. Since the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also referred to as a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductor depending on the analysis method.
  • a structural analysis is performed on an nc-OS film using an XRD apparatus, a peak indicating crystallinity is not detected in the Out-of-plane XRD measurement using a ⁇ / 2 ⁇ scan.
  • electron beam diffraction also referred to as limited field electron diffraction
  • a diffraction pattern such as a halo pattern is performed. Is observed.
  • electron diffraction also referred to as nanobeam electron diffraction
  • an electron beam having a probe diameter for example, 1 nm or more and 30 nm or less
  • An electron diffraction pattern in which a plurality of spots are observed in a ring-shaped region centered on a direct spot may be acquired.
  • the a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor.
  • the a-like OS has a void or low density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.
  • a-like OS has a higher hydrogen concentration in the membrane than nc-OS and CAAC-OS.
  • CAC-OS relates to the material composition.
  • CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
  • the mixed state is also called a mosaic shape or a patch shape.
  • CAC-OS has a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). It says.). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.
  • the atomic number ratios of In, Ga, and Zn with respect to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are expressed as [In], [Ga], and [Zn], respectively.
  • the first region is a region in which [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region in which [Ga] is larger than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region in which indium oxide, indium zinc oxide, and the like are the main components.
  • the second region is a region in which gallium oxide, gallium zinc oxide, or the like is the main component. That is, the first region can be rephrased as a region containing In as a main component. Further, the second region can be rephrased as a region containing Ga as a main component.
  • a region containing In as a main component (No. 1) by EDX mapping acquired by using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy). It can be confirmed that the region (1 region) and the region containing Ga as a main component (second region) have a structure in which they are unevenly distributed and mixed.
  • EDX Energy Dispersive X-ray spectroscopy
  • CAC-OS When CAC-OS is used for a transistor, the conductivity caused by the first region and the insulating property caused by the second region act in a complementary manner to switch the switching function (On / Off function). Can be added to CAC-OS. That is, the CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor in the whole material. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS for the transistor, high on -current (Ion), high field effect mobility ( ⁇ ), and good switching operation can be realized.
  • Ion on -current
  • ⁇ high field effect mobility
  • Oxide semiconductors have various structures, and each has different characteristics.
  • the oxide semiconductor of one aspect of the present invention has two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, a-like OS, CAC-OS, nc-OS, and CAAC-OS. You may.
  • the oxide semiconductor as a transistor, a transistor having high field effect mobility can be realized. Moreover, a highly reliable transistor can be realized.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm -3 or less, preferably 1 ⁇ 10 15 cm -3 or less, more preferably 1 ⁇ 10 13 cm -3 or less, more preferably 1 ⁇ 10 11 cm ⁇ . It is 3 or less, more preferably less than 1 ⁇ 10 10 cm -3 , and more than 1 ⁇ 10 -9 cm -3 .
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density is referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • An oxide semiconductor having a low carrier concentration may be referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • the charge captured at the trap level of the oxide semiconductor takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor having a high trap level density may have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms / cm 3 or less, preferably 3 or less. 2 ⁇ 10 17 atoms / cm 3 or less.
  • the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 16 atoms / cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms / cm 3 , preferably 5 ⁇ 10 18 atoms / cm 3 or less, and more preferably 1 ⁇ 10 18 atoms / cm 3 or less. , More preferably 5 ⁇ 10 17 atoms / cm 3 or less.
  • Hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to become water, which may form an oxygen deficiency.
  • oxygen deficiency When hydrogen enters the oxygen deficiency, electrons that are carriers may be generated.
  • a part of hydrogen may be combined with oxygen that is bonded to a metal atom to generate an electron as a carrier. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have a normally-on characteristic. Therefore, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms / cm 3 , preferably less than 1 ⁇ 10 19 atoms / cm 3 , and more preferably 5 ⁇ 10 18 atoms / cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms / cm 3 .
  • This embodiment can be implemented in combination with other embodiments described in the present specification, or examples thereof, at least in part thereof.
  • FIG. 25A is a diagram showing the appearance of the head-mounted display 8200.
  • the head-mounted display 8200 includes a mounting unit 8201, a lens 8202, a main body 8203, a display unit 8204, a cable 8205, and the like. Further, the mounting portion 8201 has a built-in battery 8206.
  • the cable 8205 supplies electric power from the battery 8206 to the main body 8203.
  • the main body 8203 is provided with, for example, a wireless receiver, and for example, an image corresponding to the received image data can be displayed on the display unit 8204.
  • the user's line of sight can be used as an input means by capturing the movement of the user's eyeball or eyelid with a camera provided on the main body 8203 and calculating the coordinates of the user's line of sight based on the information. can.
  • the mounting portion 8201 may be provided with a plurality of electrodes at positions where it touches the user.
  • the main body 8203 may have a function of recognizing the line of sight of the user by detecting the current flowing through the electrodes with the movement of the eyeball of the user. Further, it may have a function of monitoring the pulse of the user by detecting the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, or an acceleration sensor, and may have a function of displaying the biometric information of the user on the display unit 8204. Further, for example, the movement of the user's head may be detected and the image displayed on the display unit 8204 may be changed according to the movement.
  • a display device can be applied to the display unit 8204. As a result, a high-quality image can be displayed on the display unit 8204.
  • the head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixture 8304, and a pair of lenses 8305. Further, the housing 8301 has a built-in battery 8306, and the battery 8306 can supply electric power to, for example, the display unit 8302.
  • the user can visually recognize the display of the display unit 8302 through the lens 8305. It is preferable that the display unit 8302 is arranged in a curved shape. By arranging the display unit 8302 in a curved shape, the user can feel a high sense of presence.
  • the configuration in which one display unit 8302 is provided has been illustrated, but the present invention is not limited to this, and for example, a configuration in which two display units 8302 may be provided may be used. In this case, if one display unit is arranged in one eye of the user, for example, three-dimensional display using parallax can be performed.
  • the display device of one aspect of the present invention can be applied to the display unit 8302. As a result, a high-quality image can be displayed on the display unit 8302.
  • FIGS. 26A and 26B an example of an electronic device different from the electronic device shown in FIGS. 25A to 25D is shown in FIGS. 26A and 26B.
  • the electronic devices shown in FIGS. 26A and 26B include a housing 9000, a display unit 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, and a sensor 9007 (force, displacement, position, speed). , Acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays. It has a function to measure), a battery 9009, and the like.
  • the electronic devices shown in FIGS. 26A and 26B have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date, or time, etc., and a function to control processing by various software (programs).
  • Wireless communication function function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read program or data recorded on recording medium It can have a function of displaying on a display unit, and the like.
  • the functions that the electronic devices shown in FIGS. 26A and 26B can have are not limited to these, and can have various functions. Further, although not shown in FIGS.
  • the electronic device may have a configuration having a plurality of display units.
  • the electronic device is provided with a camera or the like, and has a function of shooting a still image, a function of shooting a moving image, a function of saving the shot image in a recording medium (external or built in the camera), and displaying the shot image on a display unit. It may have a function to perform.
  • FIGS. 26A and 26B Details of the electronic devices shown in FIGS. 26A and 26B will be described below.
  • FIG. 26A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, and the like. Specifically, it can be used as a smartphone. Further, the mobile information terminal 9101 can display characters or images on a plurality of surfaces thereof. For example, three operation buttons 9050 (also referred to as operation icons or simply icons) can be displayed on one surface of the display unit 9001. Further, the information 9051 indicated by the broken line rectangle can be displayed on the other surface of the display unit 9001.
  • information 9051 a display notifying an incoming call of e-mail, SNS (social networking service), or telephone, a title of e-mail or SNS, a sender name of e-mail or SNS, date and time, time. , Battery level, signal strength, etc.
  • the operation button 9050 or the like may be displayed instead of the information 9051 at the position where the information 9051 is displayed.
  • a display device can be applied to the portable information terminal 9101. As a result, a high-quality image can be displayed on the display unit 9001.
  • FIG. 26B is a perspective view showing a wristwatch-type portable information terminal 9200.
  • the personal digital assistant 9200 can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, Internet communication, and computer games.
  • the display unit 9001 is provided with a curved display surface, and can display along the curved display surface.
  • FIG. 26B shows an example in which the time 9251, the operation button 9252 (also referred to as an operation icon or simply an icon), and the content 9253 are displayed on the display unit 9001.
  • the content 9253 can be, for example, a moving image.
  • the personal digital assistant 9200 can execute short-range wireless communication standardized for communication. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call.
  • the mobile information terminal 9200 has a connection terminal 9006, and can directly exchange data with another information terminal via a connector. It is also possible to charge via the connection terminal 9006. The charging operation may be performed by wireless power supply without going through the connection terminal 9006.
  • a display device can be applied to the portable information terminal 9200. As a result, a high-quality image can be displayed on the display unit 9001.
  • This embodiment can be implemented in combination with other embodiments described in the present specification, or examples thereof, at least in part thereof.

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  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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