WO2022149350A1

WO2022149350A1 - Device for manufacturing vapor deposition mask and method for manufacturing vapor deposition mask

Info

Publication number: WO2022149350A1
Application number: PCT/JP2021/042022
Authority: WO
Inventors: 遼太郎木村
Original assignee: 株式会社ジャパンディスプレイ
Priority date: 2021-01-08
Filing date: 2021-11-16
Publication date: 2022-07-14
Also published as: JP2022107470A; CN116724150A; KR20230104962A

Abstract

This device for manufacturing a vapor deposition mask has a support base material having a first surface for supporting a member subject to plating, a first support member and a second support member provided so as to surround the outer periphery of the member subject to plating on the first surface, and an electrode part provided so as to be set apart from the first surface by a prescribed height. The first support member has a first wall part provided on the first surface, and a first eave part projecting toward the inner side of the first surface at the upper section of the first wall part. The second support member has a second wall part provided on the first surface, and a second eave part projecting toward the inner side of the first surface at the upper section of the second wall part. The first wall part has a first portion in which the height decreases to a prescribed height from the first surface, and a first step part formed on the inner side surface of the first wall part due to the first portion. The second wall part has a second step part formed by the electrode part projecting, at a prescribed height from the first surface, on the inner-side surface of the second wall part.

Description

Deposition mask manufacturing equipment and vapor deposition mask manufacturing method

One embodiment of the present invention relates to a vapor deposition mask manufacturing apparatus and a method for manufacturing a vapor deposition mask using the same.

In recent years, an organic EL display device using an organic EL element as a light emitting element has been known. The organic EL element has an anode electrode, a cathode electrode, and a layer containing an organic EL material provided between the anode electrode and the cathode electrode (hereinafter, referred to as “organic EL layer”). The organic EL layer includes, for example, a functional layer such as a light emitting layer, an electron injection layer, and a hole injection layer. The organic EL element emits light by applying a voltage to each of the anode electrode and the cathode electrode and passing a current between the anode electrode and the cathode electrode.

For example, a vacuum vapor deposition method is used to form a light emitting layer of an organic EL element. The vacuum vapor deposition method is a method in which a vapor deposition material is sublimated by heating it with a heater under vacuum and deposited (deposited) on the surface of a substrate. By using the vacuum vapor deposition method, a thin film of the vapor deposition material can be formed on the surface of the substrate. Further, in the vacuum vapor deposition method, a high-definition thin film pattern can be formed by using a mask (deposited mask) having a large number of fine aperture patterns.

The electrofine forming mask (EFM) manufactured by using the electroforming (electroforming) technique using electroplating (plating method) is one of the vapor deposition masks. For example, Patent Document 1 discloses a method of manufacturing a thin-film deposition mask by an electroforming technique.

Japanese Unexamined Patent Publication No. 2017-210633

For example, when an organic EL display device is manufactured using a damaged vapor deposition mask, the light emitting layer is not normally vapor-deposited on the organic EL element corresponding to the damaged portion of the vapor deposition mask. For example, if there is a defect such as a fine opening pattern being blocked due to a manufacturing defect of the vapor deposition mask, the organic EL element of the organic EL display device manufactured by using the vapor deposition mask containing the defect deposits a light emitting layer. Not done. Since the organic EL element on which the light emitting layer is not vapor-deposited does not emit light, the organic EL display device causes a display defect. Further, if there is a defect such as an opening pattern that should be originally separated due to a manufacturing defect of the vapor deposition mask, the organic EL element of the organic EL display device manufactured by using the vapor deposition mask containing the defect may have a defect. , The light emitting layer is formed in the region where the light emitting layer should not be formed originally, which causes poor element separation. Therefore, in the manufacture of thin-film deposition masks, there is a demand for a technique that does not generate defects in addition to forming a large number of fine aperture patterns with high accuracy. Further, there is a demand for an apparatus (deposited mask manufacturing apparatus) for manufacturing a vapor deposition mask that does not generate defects.

One of the objects of the present invention is to provide an apparatus for manufacturing a thin-film deposition mask capable of suppressing defects, and a method for manufacturing the thin-film deposition mask.

The apparatus for manufacturing a vapor deposition mask according to an embodiment of the present invention is provided so as to surround the support base material having a first surface for supporting the member to be plated and the outer periphery of the member to be plated on the first surface. It has a first support member, a second support member, and an electrode portion provided at a predetermined height from the first surface, and the first support member is provided on the first surface. The second support member has a first wall portion and a first eaves portion protruding inward of the first surface at the upper portion of the first wall portion, and the second support member is the first surface. The first wall portion has a second wall portion provided above and a second eaves portion protruding inward of the first surface at the upper portion of the second wall portion. It has a first portion whose height is reduced from the first surface to the predetermined height, and a first step portion on the inner surface of the first wall portion by the first portion. The second wall portion has a second step portion formed by projecting the electrode portion from the first surface at a predetermined height on the inner surface surface of the second wall portion. The first support member and the second support member can sandwich the member to be plated between the first step portion, the second step portion, and the first surface. Is located in.

In the method for manufacturing a vapor deposition mask according to an embodiment of the present invention, the first resist mask is formed in the inner region of the second surface with a first film thickness, and the support has a first surface for supporting the member to be plated. A base material, a first support member and a second support member provided on the first surface so as to surround the outer periphery of the member to be plated, and an electrode provided at a predetermined height from the first surface. The first support member has a portion, and the first support member projects inward of the first wall portion provided on the first surface and an upper portion of the first wall portion. The second support member has a first eaves portion, and the second support member is provided inside the first surface portion in the second wall portion provided on the first surface portion and in the upper part of the second wall portion. The first wall portion has a second eaves portion that protrudes toward the surface, and the first wall portion has a first portion whose height decreases from the first surface to the predetermined height, and the first wall portion. The second wall portion has a first step portion on the inner surface surface of the first wall portion, and the second wall portion is formed on the inner surface surface of the second wall portion from the first surface to the predetermined portion. The first support member and the second support member have a second step portion formed by projecting the electrode portion at a height, and the first support member and the second support member are the first step portion and the second step portion. The member to be plated is arranged so as to be able to sandwich the member to be plated between the stepped portion and the first surface, and the first eaves portion and the second eaves portion are the second surface of the member to be plated. The length of the second eaves covering the second surface is larger than the length of the first eaves covering the member to be plated. The distance between the end of the plating and the end of the first resist mask provided on the second surface is the same as the distance between the end of the first eaves and the end of the first resist mask. Using a vapor deposition mask manufacturing apparatus, the distance between the second eaves and the second surface is 10 mm, and the distance between the end of the second eaves and the end of the first resist mask is 4 mm. Then, with respect to the first resist mask, a release layer is provided on the second surface of each of the side on which the first step portion is provided and the side opposite to the side on which the first step portion is provided. A method of manufacturing a vaporized mask, including forming.

The schematic plan view of the vapor deposition mask unit produced by the method which concerns on one Embodiment of this invention is shown. The cross-sectional structure along the A1-A2 line shown in FIG. 1 is shown. 3 (A), 3 (B) and 3 (C) show schematic cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. 4 (A) and 4 (B) show schematic cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. A schematic plan view showing an apparatus for manufacturing a vapor deposition mask according to an embodiment of the present invention is shown. A schematic plan view showing an apparatus for manufacturing a vapor deposition mask according to an embodiment of the present invention is shown. 7 (A) shows a cross-sectional structure along B1-B2 shown in FIG. 6, and FIG. 7 (B) shows a cross-sectional structure along C1-C2 shown in FIG. A schematic plan view showing an apparatus and a method for manufacturing a vapor deposition mask according to an embodiment of the present invention is shown. 8 (A) shows a cross-sectional structure along D1-D2 shown in FIG. 8, and FIG. 8 (B) shows a cross-sectional structure along E1-E2 shown in FIG. It is a graph which shows the relationship of the film thickness of the outermost periphery of the peeling layer with respect to the height of the eaves part when the plating process is performed using the apparatus which manufactures the vapor deposition mask which concerns on one Embodiment of this invention. 11 (A) and 11 (B) show schematic cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. 12 (A) and 12 (B) show schematic cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. 13 (A), 13 (B) and 13 (C) show schematic cross-sectional views showing a method for manufacturing a vapor deposition mask according to an embodiment of the present invention. 14 (A) and 14 (B) show schematic cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. A schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention is shown. 16 (A) and 16 (B) show schematic cross-sectional views showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention. 17 (A) and 17 (B) show schematic cross-sectional views showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to drawings and the like. However, the present invention can be implemented in many different embodiments and is not construed as being limited to the description of the embodiments exemplified below. In order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but the drawings are merely examples and limit the interpretation of the present invention. It's not a thing. Further, in the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals (or numbers followed by a, b, A, B, etc.) to provide detailed explanations. It may be omitted as appropriate. Further, the characters added with "first" and "second" for each element are convenient signs used to distinguish each element, and have no further meaning unless otherwise specified.

As used herein, when a member or region is "above (or below)" another member or region, it is directly above (or directly below) the other member or region, unless otherwise specified. Includes not only certain cases but also above (or below) the other member or region, i.e., including the inclusion of another component above (or below) the other member or region. ..

Further, in the present specification, "α includes A, B or C", "α contains any of A, B and C", and "α is one selected from the group consisting of A, B and C". Unless otherwise specified, the expression "including" does not exclude the case where α includes a plurality of combinations of A to C. Furthermore, these expressions do not exclude cases where α contains other elements.

<1. Structure of thin-film mask unit 100>
FIG. 1 is a schematic plan view of the vapor deposition mask unit 100. FIG. 2 is a cross-sectional structure along A1 and A2 shown in FIG. The configuration of the vapor deposition mask unit 100 shown in FIGS. 1 and 2 is an example, and the configuration of the vapor deposition mask unit 100 is not limited to the configuration shown in FIGS. 1 and 2.

As shown in FIG. 1, the vapor deposition mask unit 100 is a connection portion connecting at least one vapor deposition mask 102, a support frame 108 surrounding at least one vapor deposition mask 102, and a support frame 108 and at least one vapor deposition mask 102. Includes 106. In the embodiment shown in FIG. 1, at least one vapor deposition mask 102 is composed of a plurality of vapor deposition masks 102, and the plurality of vapor deposition masks 102 are fixed to the support frame 108 via the connection portion 106, respectively.

As shown in the inserted enlarged view of FIG. 1, the vapor deposition mask 102 has a plurality of openings 103. In the vapor deposition mask 102, the plurality of openings 103 are arranged in a predetermined region to form one mask pattern 104. The vapor deposition mask 102 may include a plurality of mask patterns 104. The vapor deposition mask 102 is connected to the connection portion 106 in a region where the mask pattern 104 is not formed, and is held by the support frame 108.

As shown in FIG. 2, the vapor deposition mask 102 is a plate-shaped member, and the plurality of openings 103 are through holes penetrating the plate-shaped member. The details will be described later, but the vapor deposition mask 102 is formed by using a metal material. A support frame 108 is provided to support the vapor deposition mask 102 in a flat plate shape. A grid-like frame may be provided on the support frame 108 to hold the plurality of vapor deposition masks 102. In the vapor deposition mask unit 100, the support frame 108 corresponds to the size of the mother glass substrate, the mask pattern 104 is arranged corresponding to each display panel built in the mother glass substrate, and the plurality of openings 103 correspond to the display panel. It is arranged corresponding to the arrangement of the pixels in.

The connecting portion 106 has a function of connecting the vapor deposition mask 102 and the support frame 108 and fixing them to each other. Therefore, although the support frame 108 does not directly contact the vapor deposition mask 102, the connection portion 106 is in contact with the vapor deposition mask 102 in the non-opening portion of the vapor deposition mask 102 (the region where the mask pattern 104 is not formed), and is in contact with the side surface of the support frame 108. Contact.

The example shown in FIGS. 1 and 2 shows an embodiment in which a plurality of vapor deposition masks 102 are held on the support frame 108, but one embodiment of the present invention is not limited to this, and the support frame 108 is, for example, one. The vapor deposition mask 102 may have a configuration in which the vapor deposition mask 102 is held via the connection portion 106.

The vapor deposition mask unit 100 according to the embodiment of the present invention is used in the process of forming an organic EL element in the process of manufacturing a display panel. Specifically, it is used in a step of forming a light emitting layer of an organic EL element by using a vacuum vapor deposition method. In the step of forming the light emitting layer, the vapor deposition region on the mother glass substrate side is arranged so as to match the mask pattern 104 on the vapor deposition mask 102 side, the vapor deposition material passes through the plurality of openings 103, and the vapor deposition material is deposited in the vapor deposition region. do.

The vapor deposition mask 102 and the connection portion 106 are formed by using a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), and chromium (Cr). That is, the release layer 116 and the connection portion 106 have a metal film. The composition of the materials of the vapor deposition mask 102 and the connection portion 106 may be the same as each other. Similar to the vapor deposition mask 102 and the connection portion 106, the support frame 108 also uses a zero-valent metal material such as nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), and manganese (Mn). It is formed. For example, the composition of the material of the support frame 108 may be an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), manganese (Mn), and the alloy may be carbon (C). ) May be included.

<2. Manufacturing method of thin-film mask unit 100>
3 (A) to 4 (B) are schematic cross-sectional views showing a method of manufacturing the vapor deposition mask 102, and FIGS. 5 and 6 show a schematic view of the method of manufacturing the vapor deposition mask 102 and the vapor deposition mask manufacturing apparatus 150. 7 (A) is a cross-sectional structure along B1-B2 shown in FIG. 6, and FIG. 7 (B) is a cross-sectional structure along C1-C2 shown in FIG. Is a schematic cross-sectional view showing a method for manufacturing the vapor deposition mask 102 and the vapor deposition mask manufacturing apparatus 150, FIG. 9A is a cross-sectional structure along D1-D2 shown in FIG. 8, and FIG. 9B is a cross-sectional structure. It is a cross-sectional structure along E1-E2 shown in FIG. 8, and FIG. 10 shows the relationship between the thickness of the outermost periphery of the release layer 116 with respect to the height of the eaves when the plating process is performed using the vapor deposition mask manufacturing apparatus 150. 11 (A) to 17 (B) are schematic cross-sectional views showing a method of manufacturing the vapor deposition mask 102. The manufacturing method of the vapor deposition mask 102 or the configuration of the vapor deposition mask manufacturing apparatus 150 shown in FIGS. 3A to 17B is an example, and the manufacturing method of the vapor deposition mask 102 or the configuration of the vapor deposition mask manufacturing apparatus 150 is shown in FIG. The configuration is not limited to the configuration shown in 3 (A) to 17 (B). The same or similar configurations as those in FIGS. 1 and 2 will be omitted here.

FIG. 3A shows a step of forming the first resist mask 114 on the second surface 110A of the first support substrate 110. In one embodiment of the invention, the first support substrate 110 is made of metal. The first support substrate 110 is, for example, copper (Cu), aluminum (Al), titanium (Ti), iron (Fe), nickel (Ni), cobalt (Co), chromium (Cr), molybdenum (Mo), manganese (Mo). It is formed using a metal material such as Mn) or an alloy thereof. The alloy may be, for example, an alloy containing iron (Fe) and chromium (Cr), an alloy of iron (Fe), nickel (Ni), and manganese (Mn), even if the alloy contains carbon (C). good. For example, the first support substrate 110 may be made of stainless steel containing iron (Fe) as a main component and chromium (Cr) and nickel (Ni). Further, in one embodiment of the present invention, the first support substrate 110 is made of metal, but the first support substrate 110 is not limited to the metal. For example, the first support substrate 110 may be formed of an insulating material such as glass, quartz, ceramics, or plastic. In one embodiment of the present invention, the first support substrate 110 may be referred to as a member to be plated.

The first resist mask 114 is formed by photolithography using a photosensitive resin material. As the photosensitive resin material, a coating type photoresist or a dry film resist (DFR) can be used. The first resist mask 114 has a frame-like shape surrounding the plurality of vapor deposition masks 102 (all of the plurality of vapor deposition masks 102) when the plurality of vapor deposition masks 102 are arranged in the vapor deposition mask unit 100 shown in FIG.

FIG. 3B shows a stage of forming the release layer 116. Details of the steps for forming the release layer 116 will be described later. The release layer 116 is formed in a region exposed from the frame-shaped first resist mask on the second surface 110A of the first support substrate 110 on which the first resist mask 114 is formed. Specifically, by using the vapor deposition mask manufacturing apparatus 150, the release layer 116 is provided on the side where the first step portion 156A is provided with respect to the first resist mask 114 provided on the second surface 110A. The first step portion 156A is provided on both sides opposite to the side on which the first step portion 156A is provided. That is, the release layer 116 is provided on a part of the second surface 110A where the first resist mask 114 is not provided. The release layer 116 is formed, for example, by using the same metal material as the material forming the vapor deposition mask 102. That is, the release layer 116 has a metal film. The release layer 116 is formed by using a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), and chromium (Cr). The release layer 116 can be formed by using a plating method. For example, the release layer 116 is formed on the first support substrate 110 by a nickel plating process. When the release layer 116 is formed by the plating method, the first support substrate 110 may be washed and the release agent may be applied to the second surface 110A.

FIG. 3C shows a step of removing the first resist mask 114. The first resist mask 114 is removed by the stripping liquid. An opening 118 is formed in the region from which the first resist mask 114 has been removed. In other words, the first resist mask 114 is removed from the first support substrate 110, and the release layer 116 is separated into an inner region 120 and an outer region 122 with the opening 118 interposed therebetween.

When the release layer 116 is formed, as shown in FIG. 4A, the film thickness d1 of the first resist mask 114 is formed to be the same as or substantially the same as the design film thickness d2 of the release layer 116. preferable. When the release layer 116 is formed by a plating method, the release layer 116 grows in a direction of increasing the film thickness from the second surface 110A of the first support substrate 110 having conductivity. When the release layer 116 grows to a desired design film thickness d2, the upper surface of the first resist mask 114 has a film thickness that does not come into contact with the release layer 116, so that the subsequent release step of the first resist mask 114 Can be done well.

Generally, at the stage of forming the release layer 116, the electric field is concentrated on the outermost periphery of the vapor deposition mask 102. As a result, the film thickness on the outermost circumference of the vapor deposition mask 102 is thicker than the film thickness on the inside of the vapor deposition mask. Therefore, as shown in FIG. 4B, the release layer 116 is formed thicker than the first resist mask 114 (d2> d1), and the release layer 116 grows so as to cover the upper surface of the first resist mask 114. .. If the first resist mask 114 is removed in such a state, there is a problem that a part of the release layer 116 is peeled off. That is, when the first resist mask 114 is immersed in the release liquid, it swells, and a part of the release layer 116 covering the upper surface of the first resist mask 114 is pushed up accordingly, so that the release layer 116 is peeled off. If the peeling layer 116 is peeled off, the vapor deposition mask 102 later formed on the peeling layer 116 becomes a damaged defective product. When an organic EL display device is manufactured using a damaged vapor deposition mask, the light emitting layer is not vapor-deposited on the organic EL element corresponding to the damaged portion of the vapor deposition mask. Since the organic EL element on which the light emitting layer is not vapor-deposited does not emit light, there is a problem that the display is poor in the organic EL display device.

As described above, the release layer 116 formed by the plating method tends to have a larger film thickness because the growth of the film is more likely to be promoted in the vicinity of the outermost periphery than in the central portion. Therefore, if a condition is set so that the film thickness of the first resist mask 114 does not exceed the film thickness of the release layer 116 near the outermost periphery, the film thickness of the release layer 116 near the central portion may be insufficient.

In order to eliminate such a problem, in the method for manufacturing a vapor-filmed mask 102 according to an embodiment of the present invention, the step of forming the release layer 116 shown in FIG. 3B is the vapor-filmed mask manufacturing apparatus shown in FIG. This is done using 150. Specifically, in the method for manufacturing a vapor deposition mask 102 according to an embodiment of the present invention, the structure shown in FIG. 4A is formed by using the vapor deposition mask manufacturing apparatus 150 shown in FIGS. 5 and 6.

FIG. 5 shows, as an example, in the vapor deposition mask manufacturing apparatus 150, the second support member 164 is a detachable member, and the second support member 164 is the first surface 151A of the support base material 151 (FIG. 7 (A). )), In FIG. 6, the second support member 164 was attached to the first surface 151A (FIG. 7 (A)) of the support base material 151 in the vapor deposition mask manufacturing apparatus 150. The aspect is shown. As shown in FIG. 5 or FIG. 6, the vapor deposition mask manufacturing apparatus 150 includes a support base material 151, a storage portion 152 for accommodating the first support substrate 110 (FIG. 8), and an outer edge portion 111 of the first support substrate 110 (FIG. 8). It has a frame mold portion 154 that covers FIG. 8). The storage portion 152 is provided between the support base material 151 and the frame mold portion 154.

The frame form portion 154 is fixed to fix the first support member 162, the second support member 164, and the first support member 162 to the first surface 151A (FIG. 7A) of the support base material 151. It has

members

166A and 166B, and a fixing member 168 for fixing the second support member 164 to the first surface 151A (FIG. 7A) of the support base material 151. Further, the frame form portion 154 has an opening 190 provided by the first support member 162 and the second support member 164.

The first support member 162 has a first eaves portion 162A (FIGS. 7A and 7B) and a first wall portion 157A. The first support member 162 has a U-shape in a plan view. The U-shaped shape includes a first side 190A, a second side 190B, and a third side 190C. The first side 190A faces (opposes) the fourth side 190D included in the second support member 164. The second side 190B faces (opposes) the third side 190C. The first eaves portion 162A (FIGS. 7 (A) and 7 (B)) and the first wall portion 157A are provided on the first surface 151A (FIG. 7 (A)) of the support base material 151. Be done. The first wall portion 157A is formed on the upper portion of the first surface 151A of the support base material 151, between the first surface 151A and the first eaves portion 162A, with the first surface 151A and the first eaves portion. It is provided so as to be in contact with 162A. The first eaves portion 162A is provided so as to project inward of the first surface 151A at the upper part of the first wall portion 157A. The first support member 162 is detachable from the first surface 151A of the support base material 151 by the fixing

members

166A, 166B and 166C. The number of fixing members 166 is arbitrary. In one embodiment of the present invention, the number of fixing members 166 is, for example, eight.

The second support member 164 has an electrode portion 163, a third support member 165, a fourth side 190D, a second eaves portion 165A, and a second wall portion 157B. The electrode portion 163, the third support member 165, the fourth side 190D, the second eaves portion 165A, and the second wall portion 157B are the first surface 151A of the support base material 151 (FIG. 7). (A)) Provided above. The second wall portion 157B is located on the upper portion of the first surface 151A of the support base material 151, between the first surface 151A of the support base material 151 and the second eaves portion 165A, and is the second support base material 151. It is provided so as to be in contact with the surface 151A of 1 and the second eaves portion 165A. The electrode portion 163 is provided on the upper portion of the first surface 151A of the support base material 151 between the first surface 151A and the second eaves portion 165A so as to be in contact with the second eaves portion 165A. The second eaves portion 165A is provided in the upper part of the electrode portion 163 so as to be in contact with the electrode portion 163 and to project inward of the first surface 151A. The second support member 164 is detachable from the first surface 151A (FIG. 7A) of the support base material 151 by the fixing member 168. The number of fixing members 168 is arbitrary. The third support member 165 is provided so as to surround the electrode portion 163. In one embodiment of the present invention, the number of fixing members 168 is, for example, two. For example, by making at least one of the first support member 162 and the second support member 164 removable from the first surface 151A (FIG. 7 (A)) of the support base material 151, the first support substrate. It is possible to store the 110 (FIG. 8) in the storage unit 152 and to remove the first support board 110 (FIG. 8) from the storage unit 152.

As shown in FIGS. 6A, 7A and 7B, in the embodiment in which the second support member 164 is attached to the first surface 151A, the first support member 162 and the second support member 162 and the second support member are supported. The member 164 is provided adjacent to each other, the first eaves portion 162A and the second eaves portion 165A are provided adjacent to each other, and the first step portion 156A and the second step portion 156B are provided adjacent to each other. The first wall portion 157A and the second wall portion 157B are provided adjacent to each other. Further, the opening 190 is composed of four sides, a first side 190A, a second side 190B, a third side 190C, and a fourth side 190D. The length L1 is the length between the first side 190A and the fourth side 190D, and is also the length between the first eaves portion 162A and the second eaves portion 165A. The length L2 is the length between the second side 190B and the third side 190C, and is also the length between the first eaves portion 162A and the first eaves portion 162A. Further, the length L3 of the storage portion 152 is a length corresponding to the length L1 of the opening 190, and the length L4 of the storage portion 152 is a length corresponding to the length L2 of the opening 190. The length L3 of the storage portion 152 is also the length between the first step portion 156A and the second step portion 156B. The length L4 of the storage portion 152 is also the length of the first eaves portion 162A and the second eaves portion 165A. In one embodiment of the present invention, the length is also referred to as a distance.

The length L1 is shorter (smaller) than the length L2, the length L3 is shorter (smaller) than the length L4, the length L1 is shorter (smaller) than the length L3, and the length L2 is the length L4. Shorter (smaller) than. That is, the opening portion of the opening 190 is smaller than the storage portion 152. Further, the opening portion of the opening 190 is smaller than the first support substrate 110. Therefore, since the first support substrate 110 is securely stored and fixed in the storage portion 152, the position of the first support substrate 110 does not shift when the vapor deposition mask manufacturing apparatus 150 is immersed in the plating bath. As a result, the film thickness of the release layer 116 formed on the first support substrate 110 is uniformly formed at the central portion and the outer peripheral portion of the release layer 116, and the release layer 116 is uniformly formed in the plane. .. In one embodiment of the invention, the length L1 may be referred to as the first width, the length L2 may be referred to as the second width, and the length L3 may be referred to as the third width. The length L4 is sometimes called the fourth width.

According to FIGS. 7A and 7B, the fixing member 166A penetrates and fixes the opening 176A provided in the first support member 162 and the opening 186A provided in the support base material 151. The member 166B penetrates the opening 176B provided in the first support member 162 and the opening 186B provided in the support base material 151, and the fixing member 166C is an opening 176C provided in the first support member 162. The first support member 162 is attached to and fixed to the first surface 151A by penetrating the opening 186C provided in the support base material 151. Further, the fixing member 168 penetrates the opening 178 provided in the third support member 165, the opening 173 provided in the electrode portion 163, and the opening 186D provided in the support base material 151. The support member 164 of 2 is attached to and fixed to the first surface 151A.

As shown in FIG. 7A, the first wall portion 157A has a first portion 157C and a first step portion 156A. The first portion 157C is provided so that the height decreases from the first surface 151A over a predetermined height K. The first step portion 156A is provided on the inner surface of the first wall portion 157A by the first portion 157C. The second wall portion 157B has a second step portion 156B. The second step portion 156B is formed by projecting the electrode portion 163 from the first surface 151A at a predetermined height K on the inner surface of the second wall portion 157B. The electrode portion 163 is provided at a predetermined height K away from the first surface 151A, and projects to the opposite side of the second eaves portion 165A of the second support member 164 (third support member 165). There is. By projecting the electrode portion 163 to the opposite side with respect to the second eaves portion 165A, a connecting member such as a clip can be easily connected to the electrode portion 163. As a result, a voltage is easily applied to the electrode portion 163 via the connecting member during the plating process described later.

8, 9 (A) and 9 (B) show the steps of forming the release layer 116 using the vapor deposition mask manufacturing apparatus 150. In the following description, the description of the same or similar configuration as in FIGS. 1 to 7 (B) may be omitted.

As shown in FIGS. 8, 9 (A) and 9 (B), at the stage of forming the release layer 116, the first support substrate 110 is stored in the storage portion 152 and fixed. Specifically, the first support substrate 110 is placed on the first surface 151A of the support base material 151, and at least two sides around the first support substrate 110 are U-shaped of the first support member 162. It hits at least two sides of the corner of the shape of. For example, the two sides of the first support board 110 are abutted against the first side 190A and the second side 190B of the storage portion 152 and the third side 190C).

At this time, as shown by the dotted circle 162C (FIG. 9A) of the first support board 110, the outer edge portion 111 of one side of the first support board 110 abuts on the first step portion 156A. In other words, a part of the outer edge portion 111 of the first support board 110 is fitted into the first step portion 156A of the first support member 162, and the first support board 110 has the first surface 151A and the first step. It is sandwiched between the portion 156A and the portion 156A.

Next, the second support member 164 is attached to and fixed to the first surface 151A of the support base material 151. At this time, as shown in the dotted circle 164C (FIG. 9A), the outer edge portion 111 of one side of the first support substrate 110 abuts on the second step portion 156B. In other words, a part of the outer edge portion 111 of the first support board 110 is fitted into the second step portion 156B of the second support member 164, and the first support board 110 has the first surface 151A and the second step. It is sandwiched between the portion 156B and the portion 156B. A part of the second surface 110A of the first support board 110 is exposed to the opening 190, and the remaining part of the second surface 110A of the first support board 110 is covered with the frame portion 154. ..

As a result, the first support member 162 and the second support member 164 are provided on the first surface 151A so as to surround the outer periphery of the first support substrate 110. Further, the first surface 151A of the support base material 151 can support the first support substrate 110.

Subsequently, the vapor deposition mask manufacturing apparatus 150 in which the first support substrate 110 is housed is immersed in a plating bath. The plating process is performed by applying a voltage between the solution containing the metal material filled in the plating bath and the electrode portion 163. By using the vapor deposition mask manufacturing apparatus 150, the release layer 116 grows from the top of the second surface 110A of the conductive first support substrate 110 in the direction of increasing the film thickness, and the second surface of the first support substrate 110 is used. The release layer 116 can be formed on the 110A. In other words, the release layer 116 is opposite to the side where the first step portion 156A is provided and the side where the first step portion 156A is provided with respect to the first resist mask 114 provided on the second surface 110A. Provided on both sides. That is, the release layer 116 is provided on a part of the second surface 110A where the first resist mask 114 is not provided. The release layer 116 has a metal film formed by using a metal material.

As shown in FIG. 9A, the first support member 162 or the first eaves portion 162A covers a part of the first resist mask 114 and the second surface 110A of the first support substrate 110. In the cross-sectional structure (cross-sectional view) along D1-D2, the distance H between the portion of the first eaves portion 162A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm. Further, the distance W between the end portion of the first eaves portion 162A of the first support member 162 and the end portion of the first resist mask 114 provided on the second surface 110A is, for example, 4 mm. At this time, the design film thickness d2 of the release layer 116 is 120 μm. In one embodiment of the present invention, the distance H is also referred to as the height of the eaves, and the distance W is also referred to as the covering width.

The second support member 164 or the second eaves portion 165A covers a part of the first resist mask 114 and the second surface 110A of the first support substrate 110. In the cross-sectional structure (cross-sectional view) along D1-D2, the distance H between the portion (plane) of the second eaves portion 165A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm. The distance W between the end of the second eaves 165A of the third support member 165 and the end of the first resist mask 114 provided on the second surface 110A is, for example, 4 mm, and the second eaves. The length of the portion 165A covering the first support substrate 110 is longer (larger) than the length of the first eaves portion 162A covering the first support substrate 110.

As shown in FIG. 9B, the first support member 162 covers the first resist mask 114 and the first support substrate 110. Further, in the cross-sectional structure along E1-E2 (cross-sectional view) as well as the cross-sectional structure along D1-D2 (cross-sectional view), the portion of the first eaves portion 162A facing the first support substrate 110 (the portion facing the first support substrate 110). The distance H between the surface) and the second surface 110A is 10 mm, and the distance W between the end portion of the first eaves portion 162A and the end portion of the first resist mask 114 provided on the second surface 110A is It is 4 mm, and the design film thickness d2 of the release layer 116 is 120 μm.

When the first support board 110 is stored in the storage portion 152 and fixed, the first support board 110 abuts against at least two sides of the first support member 162 having a U-shaped corner portion sandwiched between them. 1 The support substrate 110 enters a part of the first support member 162 and the second support member 164 (third support member 165). As a result, the first support substrate 110 is stably fixed to the storage portion 152, so that the film thickness of the release layer 116 formed on the first support substrate 110 is increased between the central portion and the outer peripheral portion of the release layer 116. It is uniformly formed, and the release layer 116 is uniformly formed in the plane.

Further, since the vapor deposition mask manufacturing apparatus 150 according to the embodiment of the present invention has an opening 190 and the distance W and the distance H are composed of predetermined values, the first eaves portion 162A is the first support. The substrate 110 and the first resist mask 114 can be covered. As a result, the vapor deposition mask manufacturing apparatus 150 can control the circulation of the solution containing the metal material filled in the plating bath in the vapor deposition mask manufacturing apparatus 150. That is, in the vicinity of the outermost periphery of the first support substrate 110, the circulation of the solution is suppressed, so that the ion concentration in the nearby solution decreases as the peeling layer 116 grows. Along with this, the growth rate of the release layer 116 near the outermost periphery of the first support substrate 110 decreases, so that it is possible to suppress the film thickness from becoming larger than that in the central portion. Therefore, the thin-film mask manufacturing apparatus 150 uniformly forms the metal material whose circulation is controlled as the release layer 116 on the first support substrate 110, and adjusts the film thickness of the release layer 116 to the central portion and the outer periphery of the release layer 116. It can be formed uniformly with the parts.

As shown in FIG. 10, for example, when the distance H (height H of the eaves portion) is 3.5 mm, the film thickness of the outermost circumference of the release layer 116 is 19.5 μm or more and 20.5 μm or less, and the distance H ( When the height H of the eaves is 6 mm, the thickness of the outermost circumference of the release layer 116 is 59.5 μm or more and 60.5 μm or less, and when the distance H (height H of the eaves) is 9 mm, the release layer The outermost peripheral thickness of the 116 is 99.5 μm or more and 100.5 μm or less, and when the distance H (height H of the eaves) is 10 mm, the outermost peripheral film thickness of the release layer 116 is 119.5 μm or more and 120. It is 5 μm or less. That is, when the design film thickness d2 of the release layer 116 is set, the distance H (height H of the eaves portion) can be set using FIG. For example, in one embodiment of the present invention, as described above, the design film thickness d2 of the release layer 116 can be 120 μm by setting the distance H (height H of the eaves) to 10 mm.

The vapor deposition mask manufacturing apparatus 150 according to the embodiment of the present invention has an opening 190, and the distance W and the distance H are configured by predetermined values based on FIG. 10, and the film thickness of the release layer 116 is controlled. can do. As a result, since the film thickness of the release layer 116 does not vary between the central portion and the vicinity of the outermost periphery, the step of peeling the release layer 116 from the second surface 110A of the first support substrate 110, which will be described later. In the above, it is possible to prevent the peeling layer 116 from being peeled off or damaged.

FIG. 11A shows a stage in which the adhesive layer 124 is provided on the release layer 116. As the adhesive layer 124, it is preferable to use a resist film having a predetermined adhesive strength or adhesive strength in an unexposed state. The resist film is, for example, a dry film resist. It is preferable that the adhesive layer 124 covers the entire surface of the inner region 120 of the release layer 116, and the end portion of the adhesive layer 124 extends to the outside of the release layer 116. The end of the adhesive layer 124 may extend to the outer region 122 of the release layer 116. Since the release layer 116 supplied as a film-like member has such a size, the inner region of the release layer 116 can be reliably covered.

As shown in FIG. 11B, the outer peripheral portion of the adhesive layer 124 is unexposed, and the inner region of the adhesive layer 124 may be exposed. Specifically, in the adhesive layer 124, the outer peripheral portion 132 including the region overlapping the end portion of the peeling layer 116 is set as an unexposed region, and the region inside the outer peripheral portion 132 is exposed to be an exposed region, and is inside the outer peripheral portion 132. A process of curing the exposed surface in the region may be performed. It is preferable that at least a part of the outer region 122 (the region to be exposed) overlaps with the release layer 116. Selective exposure of the adhesive layer 124 can be performed using a photomask. For example, when the photosensitive dry film resist used as the adhesive layer 124 is of the positive type, the first photomask 126 in which the light-shielding portion 129 is formed so as to surround the translucent portion 130 is used. By such an exposure process, the adhesive layer 124 is formed with a region (region inside the outer region 122) that is hardened as compared with the outer region 122 (unexposed region) and has a reduced adhesive strength.

As described above, the adhesive force on the surface of the dry film resist is lost by the exposure treatment, but the portion that is already in contact with another surface in the unexposed state is adhered even after being cured by light irradiation. Maintain power.

FIG. 12A shows a step in which the adhesive layer 124 is brought into close contact with the second surface 112A of the second support substrate 112, and the release layer 116 is bonded together with the first support substrate 110. At this time, most of the adhesive layer 124 is exposed, and its surface loses its adhesive strength. Therefore, the second support substrate 112 is fixed at the unexposed outer peripheral portion 132 of the adhesive layer 124. On the other hand, the interface between the adhesive layer 124 and the release layer 116 is already in close contact with each other before the exposure, and although the adhesive force is lost by the exposure, the adhesive force is maintained to some extent. The second support substrate 112 is made of the same material as the first support substrate 110.

Further, the interface between the unexposed outer peripheral portion 132 and the peeling layer 116 can be improved in adhesion by performing a baking treatment after bonding. The baking treatment conditions are, for example, 60 ° C. for 1 hour.

FIG. 12B shows a step of peeling the peeling layer 116 from the second surface 110A of the first support substrate 110. The peeling layer 116 can be peeled from the first support substrate 110 by applying a physical force to the interface with the first support substrate 110. For example, a jig having a sharp tip is pressed against the interface between the first support substrate 110 and the release layer 116 to form a portion that triggers peeling, and then an external force is applied so as to peel off the first support substrate 110. Can be added to peel off the release layer 116 from the first support substrate 110.

FIG. 13A shows a step of forming the second resist mask 138 on the second support substrate 112 provided with the release layer 116. The second resist mask 138 is formed in a predetermined pattern. That is, the second resist mask 138 is selectively formed in the plurality of openings 103 and the region forming the dummy pattern 140 described later. For example, a negative photoresist is applied onto the release layer 116, and exposure is performed using a photomask so that the regions forming the plurality of openings 103 and the dummy pattern 140 are selectively exposed. Further, a positive photoresist is applied on the release layer 116, and exposure is performed using a photomask so that the non-opening is selectively exposed. Then, by developing, a patterned second resist mask 138 can be obtained. It is preferable that the second resist mask 138 is also formed on the outer edge portion of the peeling layer 116 so that the peeling layer 116 can be easily peeled from the vapor deposition mask unit 100.

FIG. 13B shows a stage in which a plating pattern is formed in a region not covered by the second resist mask 138 by using a plating method to form a vapor deposition mask 102. The plating pattern may be formed in one step or may be divided into several steps. When performing in a plurality of stages, the plating treatment may be performed so that different metals are formed in different stages. Further, the plating treatment may be performed so that the upper surface of the plating pattern is lower or higher than the upper surface of the second resist mask 138. In the latter case, the upper surface (surface) of the plating pattern may be polished to flatten the upper surface of the plating pattern. Next, as shown in FIG. 13C, by removing the second resist mask 138 by etching with a release liquid and / or ashing, a mask pattern is formed on the release layer 116 by the plurality of openings 103. The vapor deposition mask 102 can be manufactured.

As shown in FIGS. 13B and 13C, when the vapor deposition mask 102 is formed, a dummy pattern 140 separated from the vapor deposition mask 102 is formed. The dummy pattern 140 is configured to surround the plurality of vapor deposition masks 102 in a plan view. Since the dummy pattern 140 and the vapor deposition mask 102 are formed at the same time, they can have the same composition and thickness as each other.

FIG. 14A shows one aspect of the protective film 142 for protecting the mask pattern 104 of the vapor deposition mask 102. A dry film resist can be used for the protective film 142. The protective film 142 has, for example, a structure in which a photocurable resin film 144 is sandwiched between a release film 145 and a protective film 146. The photocurable resin film 144 contains a negative type photocurable resin. That is, it contains a polymer or oligomer that is cured by light. The thickness of the photocurable resin film 144 can be arbitrarily selected, and can be selected from, for example, 20 μm or more and 500 μm or less, 50 μm or more and 200 μm or less, or 50 μm or more and 120 μm or less. The protective film 146 contains a polymer material. The polymer material can be selected from, for example, polyolefin, polyimide, polyester, polystyrene, fluorine-containing polyolefin and the like.

FIG. 14B shows a state in which the protective film 142 is placed on the vapor deposition mask 102. After the release film 145 is peeled off, the protective film 142 is arranged so that the photocurable resin film 144 is sandwiched between the vapor deposition mask 102 and the protective film 146. The protective film 142 is provided so as to cover at least all the mask patterns 104.

Next, the photocurable resin film 144 is exposed. Specifically, as shown in FIG. 15, the second photomask 128 having the light-shielding portion 129 and the translucent portion 130 is arranged so that the translucent portion 130 overlaps with the mask pattern 104, and the second photomask 128 is placed. Use to expose. As a result, the solubility of the exposed portion in the developer is reduced.

FIG. 16A shows a state in which the protective film 146 is peeled off and developed after the photocurable resin film 144 is exposed, and the third resist mask 148 is formed on the mask pattern 104. As shown in FIG. 16A, when a plurality of mask patterns 104 are formed on the release layer 116, a third resist mask 148 is provided for each mask pattern 104. Since the support frame is formed on the dummy pattern 140 in a later step, the third resist mask 148 is not provided.

FIG. 16B shows a step of arranging the support frame 108 on the dummy pattern 140. The support frame 108 is arranged between the respective mask patterns when the plurality of mask patterns 104 are formed. The support frame 108 may have a wide outer shell pattern and a narrow pattern formed inside the outer shell pattern (a pattern formed between the mask patterns 104).

FIG. 17A shows a stage of forming the connection portion 106 by using the plating method. In the connection portion 106, the metal material is mainly deposited from the portion of the surface of the vapor deposition mask 102 that is not covered by the support frame 108 and the third resist mask 148. As a result, as shown in FIG. 17A, a connecting portion 106 in contact with the upper surface of the vapor deposition mask 102 and the side surface of the support frame 108 is formed. By forming the connecting portion 106, the vapor deposition mask 102 and the support frame 108 are connected and fixed.

As a result of forming the connecting portion 106, the thickness of the connecting portion 106 may be the same as the thickness of the third resist mask 148, and the thickness of the connecting portion 106 may be smaller than the thickness of the third resist mask 148. , As shown in FIG. 17A, the thickness of the connecting portion 106 may be larger than the thickness of the third resist mask 148. When the thickness of the connecting portion 106 is larger than the thickness of the third resist mask 148, the vapor deposition mask 102 and the support frame 108 are more firmly bonded to each other. On the other hand, when the thickness of the connecting portion 106 is equal to or less than the thickness of the third resist mask 148, it is possible to prevent the connecting portion 106 from being formed on the third resist mask 148. As a result, it is possible to suppress problems such as the connection portion 106 being destroyed when the third resist mask 148 is removed, or the mask pattern 104 being damaged due to the destruction of the connection portion 106. ..

As shown in FIG. 17B, the vapor deposition mask unit 100 can be formed on the second support substrate 112 by peeling the third resist mask 148 with a peeling liquid. After that, the peeling layer 116 is peeled from the second support substrate 112, and the peeling layer 116 is further peeled from the vapor deposition mask 102, whereby the vapor deposition mask unit 100 shown in FIG. 2 can be obtained.

Since the thin-film mask 102 forms a fine mask pattern 104, it is similarly required that the film thickness is uniform between the central portion and the vicinity of the outermost periphery. Therefore, the thin-film mask manufacturing apparatus 150 described above can also be used to accommodate the second support substrate 112 during the plating process at the time of forming the thin-film mask 102 shown in FIGS. 13 (B) and 13 (C).

In the manufacturing process of the vapor deposition mask unit 100 according to the present embodiment, after the release layer 116 is transferred to the second support substrate 112, the photocurable resin film 144 is exposed and developed to form the second resist mask 138 (. In the steps (A to 16 (B)) and the step of removing the second resist mask 138 with the stripping liquid (FIGS. 17 (A) to 17 (B)), a wet treatment with a chemical solution is performed.

By using the vapor deposition mask manufacturing apparatus 150 or the manufacturing method of the vapor deposition mask 102 described above, it is possible to prevent the film thickness d1 of the first resist mask 114 from becoming thicker than necessary. That is, it is possible to suppress the thickening of the first resist mask 114. Further, by using the thin-film deposition mask manufacturing apparatus 150 and the thin-film deposition mask 102 manufacturing method, it is possible to suppress the thickening of the first resist mask 114, so that it is possible to suppress the increase in cost due to the simplification of the manufacturing method and the manufacturing. can.

As the embodiment of the present invention, the above-mentioned configuration of the vapor deposition mask, the apparatus for manufacturing the vapor deposition mask, the method for manufacturing the vapor deposition mask, the configuration of the vapor deposition mask unit, and the method for manufacturing the vapor deposition mask unit are appropriately combined as long as they do not conflict with each other. Can be carried out. Further, based on the configuration of the vapor deposition mask, the equipment for manufacturing the vapor deposition mask, the manufacturing method of the vapor deposition mask, the configuration of the vapor deposition mask unit, and the manufacturing method of the vapor deposition mask unit, those skilled in the art may add, delete, or change the design as appropriate. As long as the gist of the present invention is provided, the above-mentioned ones, or the ones with additions, omissions, or changes in conditions are also included in the scope of the present invention.

In addition, even if the action / effect is different from the action / effect brought about by the above-described embodiment, those that are clear from the description of the present specification or those that can be easily predicted by those skilled in the art are of course. Is understood to be brought about by the present invention.

100: vapor deposition mask unit, 102: vapor deposition mask, 103: opening, 104: mask pattern, 106: connection portion, 108: support frame, 110: first support substrate, 110A: second surface, 111: outer edge portion, 112 : 2nd support substrate, 112A: 2nd surface, 114: 1st resist mask, 116: peeling layer, 118: opening, 120: inner region, 122: outer region, 124: adhesive layer, 126: 1st photo Mask, 128: second photomask, 129: light-shielding part, 130: translucent part, 132: outer peripheral part, 138: second resist mask, 140: dummy pattern, 142: protective film, 144: photocurable resin film, 145: Release film, 146: Protective film, 148: Third resist mask, 150: Vapor deposition mask manufacturing equipment, 151: Support base material, 151A: First surface, 152: Storage part, 154: Frame mold part, 156A: First step portion, 156B: second step portion, 157A: first wall portion, 157B: second wall portion, 157C: first portion, 162: first support member, 162A: first Mask, 162C: Circle, 163: Electrode, 164: Second support member, 164C: Circle, 165: Third support member, 165A: Second chest, 166: Fixing member, 166A: Fixing member, 166B: fixing member, 166C: fixing member, 168: fixing member, 173: opening, 176A: opening, 176B: opening, 176C: opening, 178: opening, 186A: opening, 186B: opening, 186C: Opening, 186D: Opening, 190: Opening, 190A: First side, 190B: Second side, 190C: Third side, 190D: Fourth side

Claims

A support base material having a first surface that supports the member to be plated, and
A first support member and a second support member provided on the first surface so as to surround the outer periphery of the member to be plated, and
It has an electrode portion provided at a predetermined height away from the first surface, and has.
The first support member includes a first wall portion provided on the first surface, a first eaves portion protruding inward of the first surface at the upper portion of the first wall portion, and the like. Have and
The second support member includes a second wall portion provided on the first surface, a second eave portion protruding inward of the first surface at the upper portion of the second wall portion, and the like. Have and
The first wall portion has a first portion whose height decreases from the first surface to the predetermined height, and a first portion on the inner surface of the first wall portion by the first portion. With a stepped part,
The second wall portion has a second step portion formed on the inner surface surface of the second wall portion by projecting the electrode portion from the first surface at the predetermined height.
The first support member and the second support member can sandwich the member to be plated between the first step portion, the second step portion, and the first surface. The equipment for manufacturing vapor deposition masks, which is arranged so as to.
The vapor deposition mask manufacturing apparatus according to claim 1, wherein the distance between the first eaves portion and the second eaves portion is smaller than the distance between the first step portion and the second step portion.
The first eaves portion and the second eaves portions cover a part of the second surface of the member to be plated.
The apparatus for manufacturing a thin-film deposition mask according to claim 2, wherein the length of the second eaves covering the second surface is larger than the length of the first eaves covering the member to be plated.
The apparatus for manufacturing a thin-film deposition mask according to claim 3, wherein the distance between the second eaves and the second surface is equivalent to the distance between the first eaves and the second surface in a cross-sectional view. ..
In a cross-sectional view, the distance between the end of the second eaves and the end of the first resist mask provided on the second surface is the end of the first eaves and the end of the first resist mask. The apparatus for manufacturing a vapor deposition mask according to claim 3, which has the same distance as the part.
Claimed that the distance between the second eaves and the second surface is 10 mm and the distance between the end of the second eaves and the end of the first resist mask is 4 mm in a cross-sectional view. Item 5. The apparatus for manufacturing a vapor deposition mask according to Item 5.
5. The fifth aspect of the present invention, wherein a release layer is provided on the side where the first step portion is provided and the opposite side of the side where the first step portion is provided with respect to the first resist mask in a cross-sectional view. The equipment for manufacturing the vapor deposition mask described in 1.
The first resist mask is formed in the inner region of the second surface with a first film thickness.
Using the vapor deposition mask manufacturing apparatus according to claim 6, the side opposite to the side where the first step portion is provided and the side opposite to the side where the first step portion is provided, with respect to the first resist mask. A method for producing a thin-film deposition mask, which comprises forming a release layer on each of the second surfaces.
The method for manufacturing a thin-film deposition mask according to claim 8, wherein the member to be plated is sandwiched between the first step portion and the second step portion and the first surface.
The method for manufacturing a vapor deposition mask according to claim 9, wherein the release layer is formed of a metal film.
The method for manufacturing a vapor deposition mask according to claim 10, wherein the release layer is formed by a plating method.
The method for manufacturing a thin-film deposition mask according to claim 8, wherein the thickness of the release layer is the same as that of the first film thickness.
The method for manufacturing a thin-film deposition mask according to claim 8, wherein the thickness of the release layer is 119.5 μm or more and 120.5 μm or less.